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You searched for subject:(Schottky barrier). Showing records 1 – 30 of 110 total matches.

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University of Pretoria

1. Ngoepe, P.N.M. (Phuti Ngako Mahloka). Optoelectronic characterisation of AlGaN based Schottky barrier diodes.

Degree: Physics, 2013, University of Pretoria

 Recent advances in growth techniques have lead to the production of high quality GaN and this has played a vital role in the improvement of… (more)

Subjects/Keywords: Algan; Schottky barrier diodes; UCTD

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APA (6th Edition):

Ngoepe, P. N. M. (. N. M. (2013). Optoelectronic characterisation of AlGaN based Schottky barrier diodes. (Masters Thesis). University of Pretoria. Retrieved from http://hdl.handle.net/2263/24890

Chicago Manual of Style (16th Edition):

Ngoepe, P N M (Phuti Ngako Mahloka). “Optoelectronic characterisation of AlGaN based Schottky barrier diodes.” 2013. Masters Thesis, University of Pretoria. Accessed October 20, 2019. http://hdl.handle.net/2263/24890.

MLA Handbook (7th Edition):

Ngoepe, P N M (Phuti Ngako Mahloka). “Optoelectronic characterisation of AlGaN based Schottky barrier diodes.” 2013. Web. 20 Oct 2019.

Vancouver:

Ngoepe PNM(NM. Optoelectronic characterisation of AlGaN based Schottky barrier diodes. [Internet] [Masters thesis]. University of Pretoria; 2013. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/2263/24890.

Council of Science Editors:

Ngoepe PNM(NM. Optoelectronic characterisation of AlGaN based Schottky barrier diodes. [Masters Thesis]. University of Pretoria; 2013. Available from: http://hdl.handle.net/2263/24890


The Ohio State University

2. Che, Yulu. Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers.

Degree: PhD, Physics, 2010, The Ohio State University

 In this thesis, we present two separate studies: (1) The development and use of “amibipolar” ballistic electron emission microscopy (BEEM), which allows the measurement of… (more)

Subjects/Keywords: Physics; BEEM; Schottky barrier

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APA (6th Edition):

Che, Y. (2010). Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1282070943

Chicago Manual of Style (16th Edition):

Che, Yulu. “Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers.” 2010. Doctoral Dissertation, The Ohio State University. Accessed October 20, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1282070943.

MLA Handbook (7th Edition):

Che, Yulu. “Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers.” 2010. Web. 20 Oct 2019.

Vancouver:

Che Y. Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers. [Internet] [Doctoral dissertation]. The Ohio State University; 2010. [cited 2019 Oct 20]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1282070943.

Council of Science Editors:

Che Y. Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers. [Doctoral Dissertation]. The Ohio State University; 2010. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1282070943


University of Pretoria

3. Ngoepe, P.N.M. (Phuti Ngako Mahloka). Optoelectronic characterisation of AlGaN based Schottky barrier diodes .

Degree: 2013, University of Pretoria

 Recent advances in growth techniques have lead to the production of high quality GaN and this has played a vital role in the improvement of… (more)

Subjects/Keywords: Algan; Schottky barrier diodes; UCTD

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APA (6th Edition):

Ngoepe, P. N. M. (. N. M. (2013). Optoelectronic characterisation of AlGaN based Schottky barrier diodes . (Masters Thesis). University of Pretoria. Retrieved from http://upetd.up.ac.za/thesis/available/etd-05222013-135333/

Chicago Manual of Style (16th Edition):

Ngoepe, P N M (Phuti Ngako Mahloka). “Optoelectronic characterisation of AlGaN based Schottky barrier diodes .” 2013. Masters Thesis, University of Pretoria. Accessed October 20, 2019. http://upetd.up.ac.za/thesis/available/etd-05222013-135333/.

MLA Handbook (7th Edition):

Ngoepe, P N M (Phuti Ngako Mahloka). “Optoelectronic characterisation of AlGaN based Schottky barrier diodes .” 2013. Web. 20 Oct 2019.

Vancouver:

Ngoepe PNM(NM. Optoelectronic characterisation of AlGaN based Schottky barrier diodes . [Internet] [Masters thesis]. University of Pretoria; 2013. [cited 2019 Oct 20]. Available from: http://upetd.up.ac.za/thesis/available/etd-05222013-135333/.

Council of Science Editors:

Ngoepe PNM(NM. Optoelectronic characterisation of AlGaN based Schottky barrier diodes . [Masters Thesis]. University of Pretoria; 2013. Available from: http://upetd.up.ac.za/thesis/available/etd-05222013-135333/


Penn State University

4. Sarpatwari, Karthik. Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: the Effects of Barrier Inhomogeneities and Geometry in Bulk and Nanoscale Structures.

Degree: PhD, Engineering Science and Mechanics, 2009, Penn State University

 The work presented in this thesis comprises of two parts. Part I deals with Schottky contacts to the wide bandgap (WBG) semiconductors SiC, GaN and… (more)

Subjects/Keywords: Schottky barrier diodes; Nanowire

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APA (6th Edition):

Sarpatwari, K. (2009). Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: the Effects of Barrier Inhomogeneities and Geometry in Bulk and Nanoscale Structures. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/9963

Chicago Manual of Style (16th Edition):

Sarpatwari, Karthik. “Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: the Effects of Barrier Inhomogeneities and Geometry in Bulk and Nanoscale Structures.” 2009. Doctoral Dissertation, Penn State University. Accessed October 20, 2019. https://etda.libraries.psu.edu/catalog/9963.

MLA Handbook (7th Edition):

Sarpatwari, Karthik. “Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: the Effects of Barrier Inhomogeneities and Geometry in Bulk and Nanoscale Structures.” 2009. Web. 20 Oct 2019.

Vancouver:

Sarpatwari K. Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: the Effects of Barrier Inhomogeneities and Geometry in Bulk and Nanoscale Structures. [Internet] [Doctoral dissertation]. Penn State University; 2009. [cited 2019 Oct 20]. Available from: https://etda.libraries.psu.edu/catalog/9963.

Council of Science Editors:

Sarpatwari K. Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: the Effects of Barrier Inhomogeneities and Geometry in Bulk and Nanoscale Structures. [Doctoral Dissertation]. Penn State University; 2009. Available from: https://etda.libraries.psu.edu/catalog/9963


NSYSU

5. Lee, Jung-Chan. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.

Degree: Master, Electrical Engineering, 2013, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP Schottky tunneling barrier(more)

Subjects/Keywords: InP; ALD; Schottky tunneling barrier MOSFET; TiO2

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APA (6th Edition):

Lee, J. (2013). Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Jung-Chan. “Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.” 2013. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Jung-Chan. “Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.” 2013. Web. 20 Oct 2019.

Vancouver:

Lee J. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee J. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

6. Tang, Tzu-hsien. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.

Degree: Master, Electrical Engineering, 2014, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP asytmmetrical Schottky barrier(more)

Subjects/Keywords: InP; TiO2; asymmetrical Schottky barrier MOSFET; ALD

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APA (6th Edition):

Tang, T. (2014). Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Web. 20 Oct 2019.

Vancouver:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

7. Yang, Sheng-Hsiung. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.

Degree: Master, Electrical Engineering, 2012, NSYSU

 In this study, the thin titanium oxide (TiO2) film deposited on InP substrate was prepared by atomic layer deposition (ALD), which was used as gate… (more)

Subjects/Keywords: InP; TiO2; ALD; Schottky barrier MOSFET

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APA (6th Edition):

Yang, S. (2012). Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Sheng-Hsiung. “Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.” 2012. Thesis, NSYSU. Accessed October 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Sheng-Hsiung. “Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.” 2012. Web. 20 Oct 2019.

Vancouver:

Yang S. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Oct 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang S. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

8. Dellas, Nicholas S. Silicide and Germanide Contacts to Silicon and Germanium Nanowires.

Degree: PhD, Materials Science and Engineering, 2011, Penn State University

 Semiconductor nanowires have shown promise and garnered considerable interest for use in field-effect transistors, thin film transistors, and chemical and biological sensors. Electrical contacts to… (more)

Subjects/Keywords: silicide; Schottky barrier; nanowire; kinetics; nickel

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APA (6th Edition):

Dellas, N. S. (2011). Silicide and Germanide Contacts to Silicon and Germanium Nanowires. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/11787

Chicago Manual of Style (16th Edition):

Dellas, Nicholas S. “Silicide and Germanide Contacts to Silicon and Germanium Nanowires.” 2011. Doctoral Dissertation, Penn State University. Accessed October 20, 2019. https://etda.libraries.psu.edu/catalog/11787.

MLA Handbook (7th Edition):

Dellas, Nicholas S. “Silicide and Germanide Contacts to Silicon and Germanium Nanowires.” 2011. Web. 20 Oct 2019.

Vancouver:

Dellas NS. Silicide and Germanide Contacts to Silicon and Germanium Nanowires. [Internet] [Doctoral dissertation]. Penn State University; 2011. [cited 2019 Oct 20]. Available from: https://etda.libraries.psu.edu/catalog/11787.

Council of Science Editors:

Dellas NS. Silicide and Germanide Contacts to Silicon and Germanium Nanowires. [Doctoral Dissertation]. Penn State University; 2011. Available from: https://etda.libraries.psu.edu/catalog/11787

9. Lioliou, Grammatiki. Wide bandgap semiconductor radiation detectors for extreme environments.

Degree: PhD, 2017, University of Sussex

 Wide bandgap semiconductor photodiodes were investigated for their suitability as radiation detectors for high temperature applications (≥ 20 °C), through measurements, calculations of key parameters… (more)

Subjects/Keywords: 620; TK7871.89.S35 Schottky-barrier diodes

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APA (6th Edition):

Lioliou, G. (2017). Wide bandgap semiconductor radiation detectors for extreme environments. (Doctoral Dissertation). University of Sussex. Retrieved from http://sro.sussex.ac.uk/id/eprint/71077/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.731211

Chicago Manual of Style (16th Edition):

Lioliou, Grammatiki. “Wide bandgap semiconductor radiation detectors for extreme environments.” 2017. Doctoral Dissertation, University of Sussex. Accessed October 20, 2019. http://sro.sussex.ac.uk/id/eprint/71077/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.731211.

MLA Handbook (7th Edition):

Lioliou, Grammatiki. “Wide bandgap semiconductor radiation detectors for extreme environments.” 2017. Web. 20 Oct 2019.

Vancouver:

Lioliou G. Wide bandgap semiconductor radiation detectors for extreme environments. [Internet] [Doctoral dissertation]. University of Sussex; 2017. [cited 2019 Oct 20]. Available from: http://sro.sussex.ac.uk/id/eprint/71077/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.731211.

Council of Science Editors:

Lioliou G. Wide bandgap semiconductor radiation detectors for extreme environments. [Doctoral Dissertation]. University of Sussex; 2017. Available from: http://sro.sussex.ac.uk/id/eprint/71077/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.731211


North Carolina State University

10. Ma, Lei. Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET.

Degree: PhD, Electrical Engineering, 2008, North Carolina State University

Subjects/Keywords: Schottky barrier MISFET; Sapphire; MOCVD; Schottky Barrier MOSFET

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APA (6th Edition):

Ma, L. (2008). Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4478

Chicago Manual of Style (16th Edition):

Ma, Lei. “Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET.” 2008. Doctoral Dissertation, North Carolina State University. Accessed October 20, 2019. http://www.lib.ncsu.edu/resolver/1840.16/4478.

MLA Handbook (7th Edition):

Ma, Lei. “Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET.” 2008. Web. 20 Oct 2019.

Vancouver:

Ma L. Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2019 Oct 20]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4478.

Council of Science Editors:

Ma L. Gallium Nitride (GaN) Heterogeneous Source Drain MOSFET. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4478


Hong Kong University of Science and Technology

11. Zhou, Qi. Schottky source/drain and high-K gate dielectric technologies for high performance InAIN/GaN heterojunction devices.

Degree: 2012, Hong Kong University of Science and Technology

 Wide bandgap GaN-based heterojunction devices have successfully entered the market of RF/microwave power amplifiers for military radar systems and commercial wireless base-stations. They are also… (more)

Subjects/Keywords: Wide gap semiconductors; Diodes, Schottky-barrier; Gallium nitride; Dielectrics

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APA (6th Edition):

Zhou, Q. (2012). Schottky source/drain and high-K gate dielectric technologies for high performance InAIN/GaN heterojunction devices. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1198222 ; http://repository.ust.hk/ir/bitstream/1783.1-73368/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhou, Qi. “Schottky source/drain and high-K gate dielectric technologies for high performance InAIN/GaN heterojunction devices.” 2012. Thesis, Hong Kong University of Science and Technology. Accessed October 20, 2019. https://doi.org/10.14711/thesis-b1198222 ; http://repository.ust.hk/ir/bitstream/1783.1-73368/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhou, Qi. “Schottky source/drain and high-K gate dielectric technologies for high performance InAIN/GaN heterojunction devices.” 2012. Web. 20 Oct 2019.

Vancouver:

Zhou Q. Schottky source/drain and high-K gate dielectric technologies for high performance InAIN/GaN heterojunction devices. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2012. [cited 2019 Oct 20]. Available from: https://doi.org/10.14711/thesis-b1198222 ; http://repository.ust.hk/ir/bitstream/1783.1-73368/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhou Q. Schottky source/drain and high-K gate dielectric technologies for high performance InAIN/GaN heterojunction devices. [Thesis]. Hong Kong University of Science and Technology; 2012. Available from: https://doi.org/10.14711/thesis-b1198222 ; http://repository.ust.hk/ir/bitstream/1783.1-73368/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

12. Man, Choi Lai. Visible blind photovoltaic UV detector.

Degree: 1998, Hong Kong University of Science and Technology

 ZnS1-xTex - based Schottky barrier UV photodetectors have been fabricated on several commonly available substrates (GaAs, GaP and Si). The photoresponse of the devices as… (more)

Subjects/Keywords: Ultraviolet detectors; Diodes, schottky-barrier

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APA (6th Edition):

Man, C. L. (1998). Visible blind photovoltaic UV detector. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b583787 ; http://repository.ust.hk/ir/bitstream/1783.1-5346/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Man, Choi Lai. “Visible blind photovoltaic UV detector.” 1998. Thesis, Hong Kong University of Science and Technology. Accessed October 20, 2019. https://doi.org/10.14711/thesis-b583787 ; http://repository.ust.hk/ir/bitstream/1783.1-5346/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Man, Choi Lai. “Visible blind photovoltaic UV detector.” 1998. Web. 20 Oct 2019.

Vancouver:

Man CL. Visible blind photovoltaic UV detector. [Internet] [Thesis]. Hong Kong University of Science and Technology; 1998. [cited 2019 Oct 20]. Available from: https://doi.org/10.14711/thesis-b583787 ; http://repository.ust.hk/ir/bitstream/1783.1-5346/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Man CL. Visible blind photovoltaic UV detector. [Thesis]. Hong Kong University of Science and Technology; 1998. Available from: https://doi.org/10.14711/thesis-b583787 ; http://repository.ust.hk/ir/bitstream/1783.1-5346/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

13. Noor Elahi, Asim. Electrical Studies on Schottky Barrier Diodes (SBDs) on Gallium Nitride (GaN).

Degree: MS, Electrical Engineering, 2015, Penn State University

 In this work, the thesis describes experiments made on both GaN Schottky barrier diodes (SBDs) and commercially available SiC Schottky barrier diodes (SBDs). The electrical… (more)

Subjects/Keywords: GaN SiC Schottky Barrier Diodes LED Electrical Characteristics Q

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APA (6th Edition):

Noor Elahi, A. (2015). Electrical Studies on Schottky Barrier Diodes (SBDs) on Gallium Nitride (GaN). (Masters Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/24955

Chicago Manual of Style (16th Edition):

Noor Elahi, Asim. “Electrical Studies on Schottky Barrier Diodes (SBDs) on Gallium Nitride (GaN).” 2015. Masters Thesis, Penn State University. Accessed October 20, 2019. https://etda.libraries.psu.edu/catalog/24955.

MLA Handbook (7th Edition):

Noor Elahi, Asim. “Electrical Studies on Schottky Barrier Diodes (SBDs) on Gallium Nitride (GaN).” 2015. Web. 20 Oct 2019.

Vancouver:

Noor Elahi A. Electrical Studies on Schottky Barrier Diodes (SBDs) on Gallium Nitride (GaN). [Internet] [Masters thesis]. Penn State University; 2015. [cited 2019 Oct 20]. Available from: https://etda.libraries.psu.edu/catalog/24955.

Council of Science Editors:

Noor Elahi A. Electrical Studies on Schottky Barrier Diodes (SBDs) on Gallium Nitride (GaN). [Masters Thesis]. Penn State University; 2015. Available from: https://etda.libraries.psu.edu/catalog/24955


Penn State University

14. Wang, Junjie. Improving the quality of Cvd graphene based devices and transport studies of few-layer Wse2.

Degree: PhD, Physics, 2015, Penn State University

 This dissertation consists of two main topics: a) advances on the synthesis and quality of chemical vapor deposited graphene and devices; b) electrical and thermoelectrical… (more)

Subjects/Keywords: Graphene; CVD; Transition metal dichalcogenides; Schottky barrier; Thermionic field emission

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APA (6th Edition):

Wang, J. (2015). Improving the quality of Cvd graphene based devices and transport studies of few-layer Wse2. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/26576

Chicago Manual of Style (16th Edition):

Wang, Junjie. “Improving the quality of Cvd graphene based devices and transport studies of few-layer Wse2.” 2015. Doctoral Dissertation, Penn State University. Accessed October 20, 2019. https://etda.libraries.psu.edu/catalog/26576.

MLA Handbook (7th Edition):

Wang, Junjie. “Improving the quality of Cvd graphene based devices and transport studies of few-layer Wse2.” 2015. Web. 20 Oct 2019.

Vancouver:

Wang J. Improving the quality of Cvd graphene based devices and transport studies of few-layer Wse2. [Internet] [Doctoral dissertation]. Penn State University; 2015. [cited 2019 Oct 20]. Available from: https://etda.libraries.psu.edu/catalog/26576.

Council of Science Editors:

Wang J. Improving the quality of Cvd graphene based devices and transport studies of few-layer Wse2. [Doctoral Dissertation]. Penn State University; 2015. Available from: https://etda.libraries.psu.edu/catalog/26576


University of California – Riverside

15. Zahin, Adiba. Schottky Barrier Heights at Two-Dimensional Metallic and Semiconducting Transition-Metal Dichalcogenide Interfaces.

Degree: Electrical Engineering, 2017, University of California – Riverside

 ABSTRACT OF THE DISSERTATIONSchottky Barrier Heights at Two-Dimensional Metallic and SemiconductingTransition-Metal Dichalcogenide InterfacesbyAdiba ZahinMaster, Graduate Program in Electrical and Computer EngineeringUniversity of California, Riverside, September… (more)

Subjects/Keywords: Engineering; 2D TMDC; Contact Resistance; Heterostructure; Metallic TMDC; Schottky Barrier

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APA (6th Edition):

Zahin, A. (2017). Schottky Barrier Heights at Two-Dimensional Metallic and Semiconducting Transition-Metal Dichalcogenide Interfaces. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/1pt889c6

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zahin, Adiba. “Schottky Barrier Heights at Two-Dimensional Metallic and Semiconducting Transition-Metal Dichalcogenide Interfaces.” 2017. Thesis, University of California – Riverside. Accessed October 20, 2019. http://www.escholarship.org/uc/item/1pt889c6.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zahin, Adiba. “Schottky Barrier Heights at Two-Dimensional Metallic and Semiconducting Transition-Metal Dichalcogenide Interfaces.” 2017. Web. 20 Oct 2019.

Vancouver:

Zahin A. Schottky Barrier Heights at Two-Dimensional Metallic and Semiconducting Transition-Metal Dichalcogenide Interfaces. [Internet] [Thesis]. University of California – Riverside; 2017. [cited 2019 Oct 20]. Available from: http://www.escholarship.org/uc/item/1pt889c6.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zahin A. Schottky Barrier Heights at Two-Dimensional Metallic and Semiconducting Transition-Metal Dichalcogenide Interfaces. [Thesis]. University of California – Riverside; 2017. Available from: http://www.escholarship.org/uc/item/1pt889c6

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vilnius Pedagogical University

16. Pigaga, Kęstutis. Srovės pernešimo mechanizmas A3B5 junginių plonose plėvelėse.

Degree: Master, Physics, 2008, Vilnius Pedagogical University

Puslaidininkinės medžiagos A3 B5 tipo plačiau naudojamos puslaidininkių gamyboje, yra sukurtos įvairios teorijos krūvininkų pernašai per struktūrą aiškinti. Daugiausia klausimų kyla interpretuojant srovės pernešimą per… (more)

Subjects/Keywords: Puslaidininkiai; Srovė; Pernešimas; Šotkio; Barjeras; Current; Transport; Mechanizm; Schottky; Barrier

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APA (6th Edition):

Pigaga, Kęstutis. (2008). Srovės pernešimo mechanizmas A3B5 junginių plonose plėvelėse. (Masters Thesis). Vilnius Pedagogical University. Retrieved from http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2008~D_20080924_180953-29216 ;

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

Pigaga, Kęstutis. “Srovės pernešimo mechanizmas A3B5 junginių plonose plėvelėse.” 2008. Masters Thesis, Vilnius Pedagogical University. Accessed October 20, 2019. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2008~D_20080924_180953-29216 ;.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

Pigaga, Kęstutis. “Srovės pernešimo mechanizmas A3B5 junginių plonose plėvelėse.” 2008. Web. 20 Oct 2019.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

Pigaga, Kęstutis. Srovės pernešimo mechanizmas A3B5 junginių plonose plėvelėse. [Internet] [Masters thesis]. Vilnius Pedagogical University; 2008. [cited 2019 Oct 20]. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2008~D_20080924_180953-29216 ;.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

Pigaga, Kęstutis. Srovės pernešimo mechanizmas A3B5 junginių plonose plėvelėse. [Masters Thesis]. Vilnius Pedagogical University; 2008. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2008~D_20080924_180953-29216 ;

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Cambridge

17. Zheng, Shan. Two-dimensional electronics : from material synthesis to device applications.

Degree: PhD, 2018, University of Cambridge

 Two-dimensional (2D) materials have attracted extensive research interest in recent years. Among them, graphene and the semiconducting transition metal dichalcogenides (TMDs) are considered as promising… (more)

Subjects/Keywords: Graphene; TMD; FET; Contact resistance; Schottky barrier height; CVD

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zheng, S. (2018). Two-dimensional electronics : from material synthesis to device applications. (Doctoral Dissertation). University of Cambridge. Retrieved from https://www.repository.cam.ac.uk/handle/1810/284930 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.763691

Chicago Manual of Style (16th Edition):

Zheng, Shan. “Two-dimensional electronics : from material synthesis to device applications.” 2018. Doctoral Dissertation, University of Cambridge. Accessed October 20, 2019. https://www.repository.cam.ac.uk/handle/1810/284930 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.763691.

MLA Handbook (7th Edition):

Zheng, Shan. “Two-dimensional electronics : from material synthesis to device applications.” 2018. Web. 20 Oct 2019.

Vancouver:

Zheng S. Two-dimensional electronics : from material synthesis to device applications. [Internet] [Doctoral dissertation]. University of Cambridge; 2018. [cited 2019 Oct 20]. Available from: https://www.repository.cam.ac.uk/handle/1810/284930 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.763691.

Council of Science Editors:

Zheng S. Two-dimensional electronics : from material synthesis to device applications. [Doctoral Dissertation]. University of Cambridge; 2018. Available from: https://www.repository.cam.ac.uk/handle/1810/284930 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.763691


University of Rochester

18. Zhang, Minlu (1979 - ). Investigation of multi-layer organic photovoltaic devices.

Degree: PhD, 2012, University of Rochester

 This thesis is an investigation of the fabrication, characterization, and performances of organic photovoltaic (OPV) devices with fullerenes as the primary light absorber. Various device… (more)

Subjects/Keywords: Bilayer heterojunction; Bulk heterojunction; Organic photovoltaic; Schottky-barrier; Tandem

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APA (6th Edition):

Zhang, M. (. -. ). (2012). Investigation of multi-layer organic photovoltaic devices. (Doctoral Dissertation). University of Rochester. Retrieved from http://hdl.handle.net/1802/25343

Chicago Manual of Style (16th Edition):

Zhang, Minlu (1979 - ). “Investigation of multi-layer organic photovoltaic devices.” 2012. Doctoral Dissertation, University of Rochester. Accessed October 20, 2019. http://hdl.handle.net/1802/25343.

MLA Handbook (7th Edition):

Zhang, Minlu (1979 - ). “Investigation of multi-layer organic photovoltaic devices.” 2012. Web. 20 Oct 2019.

Vancouver:

Zhang M(-). Investigation of multi-layer organic photovoltaic devices. [Internet] [Doctoral dissertation]. University of Rochester; 2012. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/1802/25343.

Council of Science Editors:

Zhang M(-). Investigation of multi-layer organic photovoltaic devices. [Doctoral Dissertation]. University of Rochester; 2012. Available from: http://hdl.handle.net/1802/25343


University of Florida

19. Chen, Xiao. Schottky Barrier Field Effect Transistors Using Highly Purified Carbon Nanotubes and Graphene as Field Permeable Electrodes.

Degree: PhD, Physics, 2015, University of Florida

Subjects/Keywords: barrier; graphene; nanotube; schottky; transistor

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APA (6th Edition):

Chen, X. (2015). Schottky Barrier Field Effect Transistors Using Highly Purified Carbon Nanotubes and Graphene as Field Permeable Electrodes. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0049553

Chicago Manual of Style (16th Edition):

Chen, Xiao. “Schottky Barrier Field Effect Transistors Using Highly Purified Carbon Nanotubes and Graphene as Field Permeable Electrodes.” 2015. Doctoral Dissertation, University of Florida. Accessed October 20, 2019. http://ufdc.ufl.edu/UFE0049553.

MLA Handbook (7th Edition):

Chen, Xiao. “Schottky Barrier Field Effect Transistors Using Highly Purified Carbon Nanotubes and Graphene as Field Permeable Electrodes.” 2015. Web. 20 Oct 2019.

Vancouver:

Chen X. Schottky Barrier Field Effect Transistors Using Highly Purified Carbon Nanotubes and Graphene as Field Permeable Electrodes. [Internet] [Doctoral dissertation]. University of Florida; 2015. [cited 2019 Oct 20]. Available from: http://ufdc.ufl.edu/UFE0049553.

Council of Science Editors:

Chen X. Schottky Barrier Field Effect Transistors Using Highly Purified Carbon Nanotubes and Graphene as Field Permeable Electrodes. [Doctoral Dissertation]. University of Florida; 2015. Available from: http://ufdc.ufl.edu/UFE0049553


University of Arizona

20. MOONEY, JONATHAN MARTIN. INVESTIGATION OF THE PROCESS OF INTERNAL PHOTOEMISSION IN PLATINUM SILICIDE SCHOTTKY BARRIER DIODES (DETECTOR, INFRARED).

Degree: 1986, University of Arizona

 In this work, the theory of internal photoemission is reviewed and extended for the special case of platinum silicide Schottky barrier infrared photodiodes. Vickers' model… (more)

Subjects/Keywords: Photoemission.; Diodes, Schottky-barrier.

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APA (6th Edition):

MOONEY, J. M. (1986). INVESTIGATION OF THE PROCESS OF INTERNAL PHOTOEMISSION IN PLATINUM SILICIDE SCHOTTKY BARRIER DIODES (DETECTOR, INFRARED). (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/188156

Chicago Manual of Style (16th Edition):

MOONEY, JONATHAN MARTIN. “INVESTIGATION OF THE PROCESS OF INTERNAL PHOTOEMISSION IN PLATINUM SILICIDE SCHOTTKY BARRIER DIODES (DETECTOR, INFRARED). ” 1986. Doctoral Dissertation, University of Arizona. Accessed October 20, 2019. http://hdl.handle.net/10150/188156.

MLA Handbook (7th Edition):

MOONEY, JONATHAN MARTIN. “INVESTIGATION OF THE PROCESS OF INTERNAL PHOTOEMISSION IN PLATINUM SILICIDE SCHOTTKY BARRIER DIODES (DETECTOR, INFRARED). ” 1986. Web. 20 Oct 2019.

Vancouver:

MOONEY JM. INVESTIGATION OF THE PROCESS OF INTERNAL PHOTOEMISSION IN PLATINUM SILICIDE SCHOTTKY BARRIER DIODES (DETECTOR, INFRARED). [Internet] [Doctoral dissertation]. University of Arizona; 1986. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/10150/188156.

Council of Science Editors:

MOONEY JM. INVESTIGATION OF THE PROCESS OF INTERNAL PHOTOEMISSION IN PLATINUM SILICIDE SCHOTTKY BARRIER DIODES (DETECTOR, INFRARED). [Doctoral Dissertation]. University of Arizona; 1986. Available from: http://hdl.handle.net/10150/188156


University of Arizona

21. Yates, Kenneth Lee, 1959-. Avalanche characteristics of silicide Schottky barrier diodes .

Degree: 1987, University of Arizona

 This thesis investigates the use of an avalanche Platinum Silicide (PtSi) Schottky Barrier Diode as a detector in fiber optic communication systems for the 1.3… (more)

Subjects/Keywords: Diodes, Schottky-barrier.; Infrared detectors.

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APA (6th Edition):

Yates, Kenneth Lee, 1. (1987). Avalanche characteristics of silicide Schottky barrier diodes . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/276634

Chicago Manual of Style (16th Edition):

Yates, Kenneth Lee, 1959-. “Avalanche characteristics of silicide Schottky barrier diodes .” 1987. Masters Thesis, University of Arizona. Accessed October 20, 2019. http://hdl.handle.net/10150/276634.

MLA Handbook (7th Edition):

Yates, Kenneth Lee, 1959-. “Avalanche characteristics of silicide Schottky barrier diodes .” 1987. Web. 20 Oct 2019.

Vancouver:

Yates, Kenneth Lee 1. Avalanche characteristics of silicide Schottky barrier diodes . [Internet] [Masters thesis]. University of Arizona; 1987. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/10150/276634.

Council of Science Editors:

Yates, Kenneth Lee 1. Avalanche characteristics of silicide Schottky barrier diodes . [Masters Thesis]. University of Arizona; 1987. Available from: http://hdl.handle.net/10150/276634


University of Arizona

22. Arnold, John Christopher, 1964-. Modification of Schottky diode performance due to ion bombardment .

Degree: 1989, University of Arizona

 An experimental and theoretical analysis of the effects of ion bombardment on Schottky diodes is presented. The experimentally observed shifts in diode performance are compared… (more)

Subjects/Keywords: Diodes, Schottky-barrier.; Ion bombardment.

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APA (6th Edition):

Arnold, John Christopher, 1. (1989). Modification of Schottky diode performance due to ion bombardment . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/277047

Chicago Manual of Style (16th Edition):

Arnold, John Christopher, 1964-. “Modification of Schottky diode performance due to ion bombardment .” 1989. Masters Thesis, University of Arizona. Accessed October 20, 2019. http://hdl.handle.net/10150/277047.

MLA Handbook (7th Edition):

Arnold, John Christopher, 1964-. “Modification of Schottky diode performance due to ion bombardment .” 1989. Web. 20 Oct 2019.

Vancouver:

Arnold, John Christopher 1. Modification of Schottky diode performance due to ion bombardment . [Internet] [Masters thesis]. University of Arizona; 1989. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/10150/277047.

Council of Science Editors:

Arnold, John Christopher 1. Modification of Schottky diode performance due to ion bombardment . [Masters Thesis]. University of Arizona; 1989. Available from: http://hdl.handle.net/10150/277047


Universidade Federal de Viçosa

23. Denis Rafael de Oliveira Pereira. Construção e caracterização de célula solar tipo barreira Schottky CdTe/Al.

Degree: 2011, Universidade Federal de Viçosa

In this work the techniques of hot wall epitaxy (HWE) and molecular beam epitaxy (MBE) on thin films of CdTe (cadmium telluride) were used in… (more)

Subjects/Keywords: Celular solar; Barreira Schottky; CdTe/Al; FISICA DA MATERIA CONDENSADA; Solar cells; Schottky barrier; CdTe/Al

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APA (6th Edition):

Pereira, D. R. d. O. (2011). Construção e caracterização de célula solar tipo barreira Schottky CdTe/Al. (Thesis). Universidade Federal de Viçosa. Retrieved from http://www.tede.ufv.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=3534

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pereira, Denis Rafael de Oliveira. “Construção e caracterização de célula solar tipo barreira Schottky CdTe/Al.” 2011. Thesis, Universidade Federal de Viçosa. Accessed October 20, 2019. http://www.tede.ufv.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=3534.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pereira, Denis Rafael de Oliveira. “Construção e caracterização de célula solar tipo barreira Schottky CdTe/Al.” 2011. Web. 20 Oct 2019.

Vancouver:

Pereira DRdO. Construção e caracterização de célula solar tipo barreira Schottky CdTe/Al. [Internet] [Thesis]. Universidade Federal de Viçosa; 2011. [cited 2019 Oct 20]. Available from: http://www.tede.ufv.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=3534.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pereira DRdO. Construção e caracterização de célula solar tipo barreira Schottky CdTe/Al. [Thesis]. Universidade Federal de Viçosa; 2011. Available from: http://www.tede.ufv.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=3534

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vilnius Pedagogical University

24. Balsevičius, Marius. Šotkio barjeras nanodariniuose.

Degree: Master, Physics, 2010, Vilnius Pedagogical University

Vieno matmens (1D) puslaidininkinės nanovielos (GaN, SnO2 ir kt.) suteikia puikias galimybes siekiant ištirti šių vielų elektros laidumo savybes bei šiluminę pernašą jose, kai keičiami… (more)

Subjects/Keywords: Šotkio barjeras; Nanodariniai; Nanovielytės; Elektrinis laidumas; Schottky barrier; Nanostructures; Nanowires; Electrical conduction

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APA (6th Edition):

Balsevičius, Marius. (2010). Šotkio barjeras nanodariniuose. (Masters Thesis). Vilnius Pedagogical University. Retrieved from http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100702_113435-30321 ;

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

Balsevičius, Marius. “Šotkio barjeras nanodariniuose.” 2010. Masters Thesis, Vilnius Pedagogical University. Accessed October 20, 2019. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100702_113435-30321 ;.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

Balsevičius, Marius. “Šotkio barjeras nanodariniuose.” 2010. Web. 20 Oct 2019.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

Balsevičius, Marius. Šotkio barjeras nanodariniuose. [Internet] [Masters thesis]. Vilnius Pedagogical University; 2010. [cited 2019 Oct 20]. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100702_113435-30321 ;.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

Balsevičius, Marius. Šotkio barjeras nanodariniuose. [Masters Thesis]. Vilnius Pedagogical University; 2010. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100702_113435-30321 ;

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Gothenburg / Göteborgs Universitet

25. Svensson, Johannes. Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel Devices.

Degree: 2010, University of Gothenburg / Göteborgs Universitet

 Carbon nanotubes (CNTs) are envisioned to be used as the basic building blocks in future electronics due to their excellent electronic properties such as high… (more)

Subjects/Keywords: Carbon nanotube; chemical vapour deposition; Field effect transistor; Marangoni convection; Schottky barrier

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APA (6th Edition):

Svensson, J. (2010). Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel Devices. (Thesis). University of Gothenburg / Göteborgs Universitet. Retrieved from http://hdl.handle.net/2077/21859

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Svensson, Johannes. “Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel Devices.” 2010. Thesis, University of Gothenburg / Göteborgs Universitet. Accessed October 20, 2019. http://hdl.handle.net/2077/21859.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Svensson, Johannes. “Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel Devices.” 2010. Web. 20 Oct 2019.

Vancouver:

Svensson J. Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel Devices. [Internet] [Thesis]. University of Gothenburg / Göteborgs Universitet; 2010. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/2077/21859.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Svensson J. Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel Devices. [Thesis]. University of Gothenburg / Göteborgs Universitet; 2010. Available from: http://hdl.handle.net/2077/21859

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

26. Wang, Li. Gallium Nitride-based Electronic and Optoelectronic devices.

Degree: PhD, Engineering Science and Mechanics, 2014, Penn State University

 For the past decade, Gallium nitride (GaN) material system has earned a significant place in modern power electronic and optoelectronic devices due to its outstanding… (more)

Subjects/Keywords: gallium nitride; schottky barrier diodes; high electron mobility transistors; light emitting diodes

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APA (6th Edition):

Wang, L. (2014). Gallium Nitride-based Electronic and Optoelectronic devices. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/24758

Chicago Manual of Style (16th Edition):

Wang, Li. “Gallium Nitride-based Electronic and Optoelectronic devices.” 2014. Doctoral Dissertation, Penn State University. Accessed October 20, 2019. https://etda.libraries.psu.edu/catalog/24758.

MLA Handbook (7th Edition):

Wang, Li. “Gallium Nitride-based Electronic and Optoelectronic devices.” 2014. Web. 20 Oct 2019.

Vancouver:

Wang L. Gallium Nitride-based Electronic and Optoelectronic devices. [Internet] [Doctoral dissertation]. Penn State University; 2014. [cited 2019 Oct 20]. Available from: https://etda.libraries.psu.edu/catalog/24758.

Council of Science Editors:

Wang L. Gallium Nitride-based Electronic and Optoelectronic devices. [Doctoral Dissertation]. Penn State University; 2014. Available from: https://etda.libraries.psu.edu/catalog/24758


Washington University in St. Louis

27. Tran, Lauren C. Biological Applications of Extraordinary Electroconductance and Photovoltaic Effects in Inverse Extraordinary Optoconductance.

Degree: PhD, Physics, 2013, Washington University in St. Louis

  The Extraordinary Electroconductance (EEC) sensor has been previously demonstrated to have an electric field sensitivity of 3.05V/cm in a mesoscopic-scale structure fabricated at the… (more)

Subjects/Keywords: Ballistic Electron Transport, Diodes, Schottky Barrier, Electrochemical detectors, Gallium Arsenide, Nanostructures, Optical detectors; Physics

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APA (6th Edition):

Tran, L. C. (2013). Biological Applications of Extraordinary Electroconductance and Photovoltaic Effects in Inverse Extraordinary Optoconductance. (Doctoral Dissertation). Washington University in St. Louis. Retrieved from https://openscholarship.wustl.edu/art_sci_etds/1041

Chicago Manual of Style (16th Edition):

Tran, Lauren C. “Biological Applications of Extraordinary Electroconductance and Photovoltaic Effects in Inverse Extraordinary Optoconductance.” 2013. Doctoral Dissertation, Washington University in St. Louis. Accessed October 20, 2019. https://openscholarship.wustl.edu/art_sci_etds/1041.

MLA Handbook (7th Edition):

Tran, Lauren C. “Biological Applications of Extraordinary Electroconductance and Photovoltaic Effects in Inverse Extraordinary Optoconductance.” 2013. Web. 20 Oct 2019.

Vancouver:

Tran LC. Biological Applications of Extraordinary Electroconductance and Photovoltaic Effects in Inverse Extraordinary Optoconductance. [Internet] [Doctoral dissertation]. Washington University in St. Louis; 2013. [cited 2019 Oct 20]. Available from: https://openscholarship.wustl.edu/art_sci_etds/1041.

Council of Science Editors:

Tran LC. Biological Applications of Extraordinary Electroconductance and Photovoltaic Effects in Inverse Extraordinary Optoconductance. [Doctoral Dissertation]. Washington University in St. Louis; 2013. Available from: https://openscholarship.wustl.edu/art_sci_etds/1041


Vilnius Pedagogical University

28. Bačianskas, Alius. Krūvininkų generacijos mechanizmas Šottkio barjeruose.

Degree: Master, Physics, 2006, Vilnius Pedagogical University

 Concerning Strainers generation mechanism in Schottky barriers. Advisors/Committee Members: Karazija, Romualdas (Master’s degree committee chair), Udris, Arvydas (Master’s degree committee member),… (more)

Subjects/Keywords: Šottkio barjeras; Physics; Schottky barrier; Fizika

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APA (6th Edition):

Bačianskas, Alius. (2006). Krūvininkų generacijos mechanizmas Šottkio barjeruose. (Masters Thesis). Vilnius Pedagogical University. Retrieved from http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2006~D_20060618_153321-31816 ;

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

Bačianskas, Alius. “Krūvininkų generacijos mechanizmas Šottkio barjeruose.” 2006. Masters Thesis, Vilnius Pedagogical University. Accessed October 20, 2019. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2006~D_20060618_153321-31816 ;.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

Bačianskas, Alius. “Krūvininkų generacijos mechanizmas Šottkio barjeruose.” 2006. Web. 20 Oct 2019.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

Bačianskas, Alius. Krūvininkų generacijos mechanizmas Šottkio barjeruose. [Internet] [Masters thesis]. Vilnius Pedagogical University; 2006. [cited 2019 Oct 20]. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2006~D_20060618_153321-31816 ;.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

Bačianskas, Alius. Krūvininkų generacijos mechanizmas Šottkio barjeruose. [Masters Thesis]. Vilnius Pedagogical University; 2006. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2006~D_20060618_153321-31816 ;

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


McMaster University

29. Rabie, Mohamed. Cobalt Germanide Contacts: Growth Reaction, Phases, and Electrical Properties.

Degree: PhD, 2019, McMaster University

This thesis is a sandwich thesis composed of three papers that are published in refereed journals or conferences. The first paper is a systematic experimental… (more)

Subjects/Keywords: cobalt germanide; germanium; electric contact; cobalt germanide phases; fermi level pinning; Schottky barrier height

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APA (6th Edition):

Rabie, M. (2019). Cobalt Germanide Contacts: Growth Reaction, Phases, and Electrical Properties. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/24363

Chicago Manual of Style (16th Edition):

Rabie, Mohamed. “Cobalt Germanide Contacts: Growth Reaction, Phases, and Electrical Properties.” 2019. Doctoral Dissertation, McMaster University. Accessed October 20, 2019. http://hdl.handle.net/11375/24363.

MLA Handbook (7th Edition):

Rabie, Mohamed. “Cobalt Germanide Contacts: Growth Reaction, Phases, and Electrical Properties.” 2019. Web. 20 Oct 2019.

Vancouver:

Rabie M. Cobalt Germanide Contacts: Growth Reaction, Phases, and Electrical Properties. [Internet] [Doctoral dissertation]. McMaster University; 2019. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/11375/24363.

Council of Science Editors:

Rabie M. Cobalt Germanide Contacts: Growth Reaction, Phases, and Electrical Properties. [Doctoral Dissertation]. McMaster University; 2019. Available from: http://hdl.handle.net/11375/24363

30. LEE TEK PO RINUS. Advanced source and drain contact engineering for multiple- gate transistors.

Degree: 2009, National University of Singapore

Subjects/Keywords: Silicide; FinFET; CMOS; Schottky Barrier; NiSi

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APA (6th Edition):

RINUS, L. T. P. (2009). Advanced source and drain contact engineering for multiple- gate transistors. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/17722

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

RINUS, LEE TEK PO. “Advanced source and drain contact engineering for multiple- gate transistors.” 2009. Thesis, National University of Singapore. Accessed October 20, 2019. http://scholarbank.nus.edu.sg/handle/10635/17722.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

RINUS, LEE TEK PO. “Advanced source and drain contact engineering for multiple- gate transistors.” 2009. Web. 20 Oct 2019.

Vancouver:

RINUS LTP. Advanced source and drain contact engineering for multiple- gate transistors. [Internet] [Thesis]. National University of Singapore; 2009. [cited 2019 Oct 20]. Available from: http://scholarbank.nus.edu.sg/handle/10635/17722.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

RINUS LTP. Advanced source and drain contact engineering for multiple- gate transistors. [Thesis]. National University of Singapore; 2009. Available from: http://scholarbank.nus.edu.sg/handle/10635/17722

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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