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You searched for subject:(ReRAM). Showing records 1 – 30 of 30 total matches.

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University of Texas – Austin

1. -8943-9305. Intrinsic unipolar SiOx-based resistive switching memory: characterization, mechanism and applications.

Degree: PhD, Electrical and Computer engineering, 2015, University of Texas – Austin

 Floating gate (FG) nonvolatile memory has been the main structure of nonvolatile memory devices, since its invention in 1967 by D. Kahng and S. M.… (more)

Subjects/Keywords: ReRAM; Silicon oxide

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-8943-9305. (2015). Intrinsic unipolar SiOx-based resistive switching memory: characterization, mechanism and applications. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/32441

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-8943-9305. “Intrinsic unipolar SiOx-based resistive switching memory: characterization, mechanism and applications.” 2015. Doctoral Dissertation, University of Texas – Austin. Accessed April 21, 2021. http://hdl.handle.net/2152/32441.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-8943-9305. “Intrinsic unipolar SiOx-based resistive switching memory: characterization, mechanism and applications.” 2015. Web. 21 Apr 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-8943-9305. Intrinsic unipolar SiOx-based resistive switching memory: characterization, mechanism and applications. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2015. [cited 2021 Apr 21]. Available from: http://hdl.handle.net/2152/32441.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-8943-9305. Intrinsic unipolar SiOx-based resistive switching memory: characterization, mechanism and applications. [Doctoral Dissertation]. University of Texas – Austin; 2015. Available from: http://hdl.handle.net/2152/32441

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


Penn State University

2. Zheng, Yang. Modeling And Design Analysis Of Emerging Non-volatile Memories For Future Computer Systems.

Degree: 2015, Penn State University

 As traditional SRAM and DRAM are facing leakage power and fabrication difficulties beyond 22nm technology, emerging memory technologies such as spin transfer-torque RAM (STT-RAM), phase-change… (more)

Subjects/Keywords: STT-RAM; ReRAM; Non-volatile Memory

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APA (6th Edition):

Zheng, Y. (2015). Modeling And Design Analysis Of Emerging Non-volatile Memories For Future Computer Systems. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/24974

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zheng, Yang. “Modeling And Design Analysis Of Emerging Non-volatile Memories For Future Computer Systems.” 2015. Thesis, Penn State University. Accessed April 21, 2021. https://submit-etda.libraries.psu.edu/catalog/24974.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zheng, Yang. “Modeling And Design Analysis Of Emerging Non-volatile Memories For Future Computer Systems.” 2015. Web. 21 Apr 2021.

Vancouver:

Zheng Y. Modeling And Design Analysis Of Emerging Non-volatile Memories For Future Computer Systems. [Internet] [Thesis]. Penn State University; 2015. [cited 2021 Apr 21]. Available from: https://submit-etda.libraries.psu.edu/catalog/24974.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zheng Y. Modeling And Design Analysis Of Emerging Non-volatile Memories For Future Computer Systems. [Thesis]. Penn State University; 2015. Available from: https://submit-etda.libraries.psu.edu/catalog/24974

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Delft University of Technology

3. Nagarajan, Surya (author). Testing Computation-in-Memory Architectures Based on Emerging Memories.

Degree: 2019, Delft University of Technology

Many alternative computer architectures that use emerging devices are under investigation to address the challenges current architectures and technologies face. Computation-in-memory (CIM) architectures are one… (more)

Subjects/Keywords: CIM; Memory Testing; Computation in Memory; ReRAM

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APA (6th Edition):

Nagarajan, S. (. (2019). Testing Computation-in-Memory Architectures Based on Emerging Memories. (Masters Thesis). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:c51f1392-fc19-4be9-bd8d-b49dd6273ed7

Chicago Manual of Style (16th Edition):

Nagarajan, Surya (author). “Testing Computation-in-Memory Architectures Based on Emerging Memories.” 2019. Masters Thesis, Delft University of Technology. Accessed April 21, 2021. http://resolver.tudelft.nl/uuid:c51f1392-fc19-4be9-bd8d-b49dd6273ed7.

MLA Handbook (7th Edition):

Nagarajan, Surya (author). “Testing Computation-in-Memory Architectures Based on Emerging Memories.” 2019. Web. 21 Apr 2021.

Vancouver:

Nagarajan S(. Testing Computation-in-Memory Architectures Based on Emerging Memories. [Internet] [Masters thesis]. Delft University of Technology; 2019. [cited 2021 Apr 21]. Available from: http://resolver.tudelft.nl/uuid:c51f1392-fc19-4be9-bd8d-b49dd6273ed7.

Council of Science Editors:

Nagarajan S(. Testing Computation-in-Memory Architectures Based on Emerging Memories. [Masters Thesis]. Delft University of Technology; 2019. Available from: http://resolver.tudelft.nl/uuid:c51f1392-fc19-4be9-bd8d-b49dd6273ed7

4. NIOSI, FABIO. A junction level study of the activation process in nanowire networks.

Degree: School of Chemistry. Discipline of Chemistry, 2019, Trinity College Dublin

 Nanowire networks are promising memristive architectures for neuromorphic computing applications due to their connectivity and neurosynaptic-like behaviours. In this PhD thesis, we demonstrate a self-similar… (more)

Subjects/Keywords: Nanowire; ReRAM device; NW networks; MEMS

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APA (6th Edition):

NIOSI, F. (2019). A junction level study of the activation process in nanowire networks. (Thesis). Trinity College Dublin. Retrieved from http://hdl.handle.net/2262/86104

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

NIOSI, FABIO. “A junction level study of the activation process in nanowire networks.” 2019. Thesis, Trinity College Dublin. Accessed April 21, 2021. http://hdl.handle.net/2262/86104.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

NIOSI, FABIO. “A junction level study of the activation process in nanowire networks.” 2019. Web. 21 Apr 2021.

Vancouver:

NIOSI F. A junction level study of the activation process in nanowire networks. [Internet] [Thesis]. Trinity College Dublin; 2019. [cited 2021 Apr 21]. Available from: http://hdl.handle.net/2262/86104.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

NIOSI F. A junction level study of the activation process in nanowire networks. [Thesis]. Trinity College Dublin; 2019. Available from: http://hdl.handle.net/2262/86104

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

5. Karakolis, Panagiotis. Διατάξεις μνήμης δισταθμικής αντίστασης με τροποποιημένες διεπιφάνειες ηλεκτροδίων.

Degree: 2020, University of Patras; Πανεπιστήμιο Πατρών

Τhe design, implementation and characterization of Resistive Random Access Memories (ReRAM) devices with variable electrodes for various types of insulating material have been extensively studied.… (more)

Subjects/Keywords: Μη πτητικές μνήμες; Μνήμες δισταθμικής αντίστασης; ReRAM

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APA (6th Edition):

Karakolis, P. (2020). Διατάξεις μνήμης δισταθμικής αντίστασης με τροποποιημένες διεπιφάνειες ηλεκτροδίων. (Thesis). University of Patras; Πανεπιστήμιο Πατρών. Retrieved from http://hdl.handle.net/10442/hedi/46985

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Karakolis, Panagiotis. “Διατάξεις μνήμης δισταθμικής αντίστασης με τροποποιημένες διεπιφάνειες ηλεκτροδίων.” 2020. Thesis, University of Patras; Πανεπιστήμιο Πατρών. Accessed April 21, 2021. http://hdl.handle.net/10442/hedi/46985.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Karakolis, Panagiotis. “Διατάξεις μνήμης δισταθμικής αντίστασης με τροποποιημένες διεπιφάνειες ηλεκτροδίων.” 2020. Web. 21 Apr 2021.

Vancouver:

Karakolis P. Διατάξεις μνήμης δισταθμικής αντίστασης με τροποποιημένες διεπιφάνειες ηλεκτροδίων. [Internet] [Thesis]. University of Patras; Πανεπιστήμιο Πατρών; 2020. [cited 2021 Apr 21]. Available from: http://hdl.handle.net/10442/hedi/46985.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Karakolis P. Διατάξεις μνήμης δισταθμικής αντίστασης με τροποποιημένες διεπιφάνειες ηλεκτροδίων. [Thesis]. University of Patras; Πανεπιστήμιο Πατρών; 2020. Available from: http://hdl.handle.net/10442/hedi/46985

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

6. Wang, Yanzhen. Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs.

Degree: PhD, Electrical and Computer Engineering, 2013, University of Texas – Austin

 In the past few decades, Si-based CMOS technology is approaching to its physical quantum limit by scaling down the gate length and gate oxide thickness… (more)

Subjects/Keywords: High k; III-V; SiOx ReRAM

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APA (6th Edition):

Wang, Y. (2013). Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/21961

Chicago Manual of Style (16th Edition):

Wang, Yanzhen. “Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs.” 2013. Doctoral Dissertation, University of Texas – Austin. Accessed April 21, 2021. http://hdl.handle.net/2152/21961.

MLA Handbook (7th Edition):

Wang, Yanzhen. “Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs.” 2013. Web. 21 Apr 2021.

Vancouver:

Wang Y. Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2013. [cited 2021 Apr 21]. Available from: http://hdl.handle.net/2152/21961.

Council of Science Editors:

Wang Y. Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs. [Doctoral Dissertation]. University of Texas – Austin; 2013. Available from: http://hdl.handle.net/2152/21961

7. Zidan, Mohammed A. Memristor Circuits and Systems.

Degree: Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, 2015, King Abdullah University of Science and Technology

 Current CMOS-based technologies are facing design challenges related to the continuous scaling down of the minimum feature size, according to Moore’s law. Moreover, conventional computing… (more)

Subjects/Keywords: Memristor; Memory; ReRam; Sneak-Paths; Oscillators; crossbar

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APA (6th Edition):

Zidan, M. A. (2015). Memristor Circuits and Systems. (Thesis). King Abdullah University of Science and Technology. Retrieved from http://hdl.handle.net/10754/552716

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zidan, Mohammed A. “Memristor Circuits and Systems.” 2015. Thesis, King Abdullah University of Science and Technology. Accessed April 21, 2021. http://hdl.handle.net/10754/552716.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zidan, Mohammed A. “Memristor Circuits and Systems.” 2015. Web. 21 Apr 2021.

Vancouver:

Zidan MA. Memristor Circuits and Systems. [Internet] [Thesis]. King Abdullah University of Science and Technology; 2015. [cited 2021 Apr 21]. Available from: http://hdl.handle.net/10754/552716.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zidan MA. Memristor Circuits and Systems. [Thesis]. King Abdullah University of Science and Technology; 2015. Available from: http://hdl.handle.net/10754/552716

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. Nguyen, Clément. Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2 : Electrical characterization and modeling of the resistive switching dynamics HfO2-based OxRAM memories.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Université Grenoble Alpes (ComUE)

Les mémoires résistives à base d’oxyde OxRAM sont une technologie de mémoire non-volatile dite émergente, au même titre que les mémoires à changement de phase… (more)

Subjects/Keywords: Oxram; ReRAM; Mémoires non volatiles; Commutation; Modélisation; Caractérisation; Oxram; ReRAM; Non volatile memories; Switching; Modeling; Characterization; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Nguyen, C. (2018). Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2 : Electrical characterization and modeling of the resistive switching dynamics HfO2-based OxRAM memories. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2018GREAT035

Chicago Manual of Style (16th Edition):

Nguyen, Clément. “Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2 : Electrical characterization and modeling of the resistive switching dynamics HfO2-based OxRAM memories.” 2018. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed April 21, 2021. http://www.theses.fr/2018GREAT035.

MLA Handbook (7th Edition):

Nguyen, Clément. “Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2 : Electrical characterization and modeling of the resistive switching dynamics HfO2-based OxRAM memories.” 2018. Web. 21 Apr 2021.

Vancouver:

Nguyen C. Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2 : Electrical characterization and modeling of the resistive switching dynamics HfO2-based OxRAM memories. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2018. [cited 2021 Apr 21]. Available from: http://www.theses.fr/2018GREAT035.

Council of Science Editors:

Nguyen C. Caractérisation électrique et modélisation de la dynamique de commutation résistive dans des mémoires OxRAM à base de HfO2 : Electrical characterization and modeling of the resistive switching dynamics HfO2-based OxRAM memories. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2018. Available from: http://www.theses.fr/2018GREAT035


Penn State University

9. Xu, Cong. Modeling, Circuit Design, and Microarchitectural Optimization of Emerging Resistive Memory.

Degree: 2014, Penn State University

 Conventional memories technologies such as SRAM, DRAM, and NAND flash are facing formidable device scaling challenges. Various new non-volatile memory (NVM) technologies have emerged recently,… (more)

Subjects/Keywords: Non-Volatile Memory; ReRAM; Computer Architecture; Memory System

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APA (6th Edition):

Xu, C. (2014). Modeling, Circuit Design, and Microarchitectural Optimization of Emerging Resistive Memory. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/23577

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Xu, Cong. “Modeling, Circuit Design, and Microarchitectural Optimization of Emerging Resistive Memory.” 2014. Thesis, Penn State University. Accessed April 21, 2021. https://submit-etda.libraries.psu.edu/catalog/23577.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Xu, Cong. “Modeling, Circuit Design, and Microarchitectural Optimization of Emerging Resistive Memory.” 2014. Web. 21 Apr 2021.

Vancouver:

Xu C. Modeling, Circuit Design, and Microarchitectural Optimization of Emerging Resistive Memory. [Internet] [Thesis]. Penn State University; 2014. [cited 2021 Apr 21]. Available from: https://submit-etda.libraries.psu.edu/catalog/23577.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Xu C. Modeling, Circuit Design, and Microarchitectural Optimization of Emerging Resistive Memory. [Thesis]. Penn State University; 2014. Available from: https://submit-etda.libraries.psu.edu/catalog/23577

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

10. Dong, Xiangyu. Modeling and Leveraging Emerging Non-Volatile Memories for Future Computer Designs .

Degree: 2011, Penn State University

 Energy efficiency has become a major constraint in the design of computing systems today. As CMOS continues scaling down, traditional CMOS scaling theory requires to… (more)

Subjects/Keywords: application; architecture; circuit; non-volatile memory; STTRAM; PCRAM; ReRAM

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APA (6th Edition):

Dong, X. (2011). Modeling and Leveraging Emerging Non-Volatile Memories for Future Computer Designs . (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/12462

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dong, Xiangyu. “Modeling and Leveraging Emerging Non-Volatile Memories for Future Computer Designs .” 2011. Thesis, Penn State University. Accessed April 21, 2021. https://submit-etda.libraries.psu.edu/catalog/12462.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dong, Xiangyu. “Modeling and Leveraging Emerging Non-Volatile Memories for Future Computer Designs .” 2011. Web. 21 Apr 2021.

Vancouver:

Dong X. Modeling and Leveraging Emerging Non-Volatile Memories for Future Computer Designs . [Internet] [Thesis]. Penn State University; 2011. [cited 2021 Apr 21]. Available from: https://submit-etda.libraries.psu.edu/catalog/12462.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dong X. Modeling and Leveraging Emerging Non-Volatile Memories for Future Computer Designs . [Thesis]. Penn State University; 2011. Available from: https://submit-etda.libraries.psu.edu/catalog/12462

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Waterloo

11. Abdelwahed, Amr. Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems.

Degree: 2018, University of Waterloo

 With the continuous and aggressive technology scaling, the design of memory systems becomes very challenging. The desire to have high-capacity, reliable, and energy efficient memory… (more)

Subjects/Keywords: RRAM; ReRAM; Neuromorphic systems; Machine learning platforms; RRAM soft-errors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Abdelwahed, A. (2018). Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/13085

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Abdelwahed, Amr. “Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems.” 2018. Thesis, University of Waterloo. Accessed April 21, 2021. http://hdl.handle.net/10012/13085.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Abdelwahed, Amr. “Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems.” 2018. Web. 21 Apr 2021.

Vancouver:

Abdelwahed A. Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems. [Internet] [Thesis]. University of Waterloo; 2018. [cited 2021 Apr 21]. Available from: http://hdl.handle.net/10012/13085.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Abdelwahed A. Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems. [Thesis]. University of Waterloo; 2018. Available from: http://hdl.handle.net/10012/13085

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Cincinnati

12. Herrmann, Eric. A Novel Gate Controlled Metal Oxide Resistive Memory Cell and its Applications.

Degree: MS, Engineering and Applied Science: Electrical Engineering, 2018, University of Cincinnati

 This thesis work expanded on traditional resistive random access memory (ReRAM) technology, which relies on movement of oxygen ions through a metal oxide, with a… (more)

Subjects/Keywords: Computer Engineering; memristor; neuromorphic; reram; metal oxide; computer memory; thin film

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APA (6th Edition):

Herrmann, E. (2018). A Novel Gate Controlled Metal Oxide Resistive Memory Cell and its Applications. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1540565326482153

Chicago Manual of Style (16th Edition):

Herrmann, Eric. “A Novel Gate Controlled Metal Oxide Resistive Memory Cell and its Applications.” 2018. Masters Thesis, University of Cincinnati. Accessed April 21, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1540565326482153.

MLA Handbook (7th Edition):

Herrmann, Eric. “A Novel Gate Controlled Metal Oxide Resistive Memory Cell and its Applications.” 2018. Web. 21 Apr 2021.

Vancouver:

Herrmann E. A Novel Gate Controlled Metal Oxide Resistive Memory Cell and its Applications. [Internet] [Masters thesis]. University of Cincinnati; 2018. [cited 2021 Apr 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1540565326482153.

Council of Science Editors:

Herrmann E. A Novel Gate Controlled Metal Oxide Resistive Memory Cell and its Applications. [Masters Thesis]. University of Cincinnati; 2018. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1540565326482153


Delft University of Technology

13. Hol, Tijs (author). Modeling the physics of RRAM defects: A model simulating RRAM defects on a macroscopic physical level.

Degree: 2020, Delft University of Technology

Resistive RAM, or RRAM, is one of the emerging non-volatile memory (NVM) technologies, which could be used in the near future to fill the gap… (more)

Subjects/Keywords: RRAM; ReRAM; OxRAM; defects; macroscopic modelling; physical modelling; defect modelling

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hol, T. (. (2020). Modeling the physics of RRAM defects: A model simulating RRAM defects on a macroscopic physical level. (Masters Thesis). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:968aa2e8-042e-437b-a7b7-d26835067757

Chicago Manual of Style (16th Edition):

Hol, Tijs (author). “Modeling the physics of RRAM defects: A model simulating RRAM defects on a macroscopic physical level.” 2020. Masters Thesis, Delft University of Technology. Accessed April 21, 2021. http://resolver.tudelft.nl/uuid:968aa2e8-042e-437b-a7b7-d26835067757.

MLA Handbook (7th Edition):

Hol, Tijs (author). “Modeling the physics of RRAM defects: A model simulating RRAM defects on a macroscopic physical level.” 2020. Web. 21 Apr 2021.

Vancouver:

Hol T(. Modeling the physics of RRAM defects: A model simulating RRAM defects on a macroscopic physical level. [Internet] [Masters thesis]. Delft University of Technology; 2020. [cited 2021 Apr 21]. Available from: http://resolver.tudelft.nl/uuid:968aa2e8-042e-437b-a7b7-d26835067757.

Council of Science Editors:

Hol T(. Modeling the physics of RRAM defects: A model simulating RRAM defects on a macroscopic physical level. [Masters Thesis]. Delft University of Technology; 2020. Available from: http://resolver.tudelft.nl/uuid:968aa2e8-042e-437b-a7b7-d26835067757

14. Rosário, Carlos Miguel Marques do. Electronic conduction processes in VCM-type metal-oxide ReRAM cells .

Degree: 2020, Universidade de Aveiro

 New applications, such as neuromorphic computing, and the limitations of current semiconductor technologies demand a revolution in electronic devices. As one of the key enablers… (more)

Subjects/Keywords: Electrical transport; Resistive switching; ReRAM; Conductive filaments; TaOx; Disordered metal

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rosário, C. M. M. d. (2020). Electronic conduction processes in VCM-type metal-oxide ReRAM cells . (Thesis). Universidade de Aveiro. Retrieved from http://hdl.handle.net/10773/30371

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rosário, Carlos Miguel Marques do. “Electronic conduction processes in VCM-type metal-oxide ReRAM cells .” 2020. Thesis, Universidade de Aveiro. Accessed April 21, 2021. http://hdl.handle.net/10773/30371.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rosário, Carlos Miguel Marques do. “Electronic conduction processes in VCM-type metal-oxide ReRAM cells .” 2020. Web. 21 Apr 2021.

Vancouver:

Rosário CMMd. Electronic conduction processes in VCM-type metal-oxide ReRAM cells . [Internet] [Thesis]. Universidade de Aveiro; 2020. [cited 2021 Apr 21]. Available from: http://hdl.handle.net/10773/30371.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rosário CMMd. Electronic conduction processes in VCM-type metal-oxide ReRAM cells . [Thesis]. Universidade de Aveiro; 2020. Available from: http://hdl.handle.net/10773/30371

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. Wakrim, Tariq. Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors) : Capacitance switching in resistive memories (ReRAM), application to impedance memories (ZRAM or mem-capacitors).

Degree: Docteur es, Nano electronique et nano technologies, 2018, Université Grenoble Alpes (ComUE)

Les mémoires résistives ReRAM (ou memristors) sont destinées à remplacer les mémoires non volatiles Flash. Les ReRAM utilisent le changement de résistance d’une structure MIM… (more)

Subjects/Keywords: Mémoires résistives ReRAM; Commutation de capacitance; Mem-Capacitors; Mémoires d’impédance; Structures MIM; Stress en tension; Resistive memories ReRAM; Capacitance switching; Mem-Capacitors; Impedance memories; MIM structures; Voltage stress; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wakrim, T. (2018). Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors) : Capacitance switching in resistive memories (ReRAM), application to impedance memories (ZRAM or mem-capacitors). (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2018GREAT085

Chicago Manual of Style (16th Edition):

Wakrim, Tariq. “Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors) : Capacitance switching in resistive memories (ReRAM), application to impedance memories (ZRAM or mem-capacitors).” 2018. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed April 21, 2021. http://www.theses.fr/2018GREAT085.

MLA Handbook (7th Edition):

Wakrim, Tariq. “Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors) : Capacitance switching in resistive memories (ReRAM), application to impedance memories (ZRAM or mem-capacitors).” 2018. Web. 21 Apr 2021.

Vancouver:

Wakrim T. Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors) : Capacitance switching in resistive memories (ReRAM), application to impedance memories (ZRAM or mem-capacitors). [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2018. [cited 2021 Apr 21]. Available from: http://www.theses.fr/2018GREAT085.

Council of Science Editors:

Wakrim T. Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors) : Capacitance switching in resistive memories (ReRAM), application to impedance memories (ZRAM or mem-capacitors). [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2018. Available from: http://www.theses.fr/2018GREAT085

16. Chi, Ping. Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives.

Degree: 2016, University of California – eScholarship, University of California

 This dissertation focuses on three types of emerging NVMs, spin-transfer torque RAM (STT-RAM), phase change memory (PCM), and metal-oxide resistive RAM (ReRAM). STT-RAM has been… (more)

Subjects/Keywords: Computer engineering; memory system design; non-volatile memory; phase change memory; ReRAM; STT-RAM

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chi, P. (2016). Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/2g6962cg

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chi, Ping. “Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives.” 2016. Thesis, University of California – eScholarship, University of California. Accessed April 21, 2021. http://www.escholarship.org/uc/item/2g6962cg.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chi, Ping. “Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives.” 2016. Web. 21 Apr 2021.

Vancouver:

Chi P. Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2021 Apr 21]. Available from: http://www.escholarship.org/uc/item/2g6962cg.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chi P. Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/2g6962cg

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

17. Ghofrani, Amirali. Towards Data Reliable, Low-Power, and Repairable Resistive Random Access Memories.

Degree: 2016, University of California – eScholarship, University of California

 A series of breakthroughs in memristive devices have demonstrated the potential of memristor arrays to serve as next generation resistive random access memories (ReRAM), which… (more)

Subjects/Keywords: Computer engineering; Electrical engineering; Low-Power; Memory Repair; Memory Testing; Memristor; Reliability; ReRAM

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ghofrani, A. (2016). Towards Data Reliable, Low-Power, and Repairable Resistive Random Access Memories. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/4v22d8gz

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ghofrani, Amirali. “Towards Data Reliable, Low-Power, and Repairable Resistive Random Access Memories.” 2016. Thesis, University of California – eScholarship, University of California. Accessed April 21, 2021. http://www.escholarship.org/uc/item/4v22d8gz.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ghofrani, Amirali. “Towards Data Reliable, Low-Power, and Repairable Resistive Random Access Memories.” 2016. Web. 21 Apr 2021.

Vancouver:

Ghofrani A. Towards Data Reliable, Low-Power, and Repairable Resistive Random Access Memories. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2021 Apr 21]. Available from: http://www.escholarship.org/uc/item/4v22d8gz.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ghofrani A. Towards Data Reliable, Low-Power, and Repairable Resistive Random Access Memories. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/4v22d8gz

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

18. Al-Mamun, Mohammad Shah. Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array.

Degree: PhD, Electrical Engineering, 2019, Virginia Tech

 Emerging memory technologies are being intensively investigated for extending Moore's scaling law in the next decade. The resistive random-access memory (ReRAM) is one of the… (more)

Subjects/Keywords: Non-volatile memory; resistive switching; ReRAM; conductive filament; memristor; bottom electrode; reliability; switching cycle

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Al-Mamun, M. S. (2019). Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/95489

Chicago Manual of Style (16th Edition):

Al-Mamun, Mohammad Shah. “Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array.” 2019. Doctoral Dissertation, Virginia Tech. Accessed April 21, 2021. http://hdl.handle.net/10919/95489.

MLA Handbook (7th Edition):

Al-Mamun, Mohammad Shah. “Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array.” 2019. Web. 21 Apr 2021.

Vancouver:

Al-Mamun MS. Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array. [Internet] [Doctoral dissertation]. Virginia Tech; 2019. [cited 2021 Apr 21]. Available from: http://hdl.handle.net/10919/95489.

Council of Science Editors:

Al-Mamun MS. Impact of Inert-electrode on the Performance and Electro-thermal Reliability of ReRAM Memory Array. [Doctoral Dissertation]. Virginia Tech; 2019. Available from: http://hdl.handle.net/10919/95489


Virginia Tech

19. Li, Yanlong. The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices.

Degree: MS, Electrical Engineering, 2020, Virginia Tech

 Although the scaling of conventional memories such as volatile dynamic random access memory (DRAM) and non-volatile flash technology is becoming increasingly difficult, new types of… (more)

Subjects/Keywords: Resistive switching Random Access Memory (ReRAM); Cobalt; Organic; PANI-CSA; Bottom electrode; reliability

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APA (6th Edition):

Li, Y. (2020). The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/97191

Chicago Manual of Style (16th Edition):

Li, Yanlong. “The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices.” 2020. Masters Thesis, Virginia Tech. Accessed April 21, 2021. http://hdl.handle.net/10919/97191.

MLA Handbook (7th Edition):

Li, Yanlong. “The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices.” 2020. Web. 21 Apr 2021.

Vancouver:

Li Y. The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices. [Internet] [Masters thesis]. Virginia Tech; 2020. [cited 2021 Apr 21]. Available from: http://hdl.handle.net/10919/97191.

Council of Science Editors:

Li Y. The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices. [Masters Thesis]. Virginia Tech; 2020. Available from: http://hdl.handle.net/10919/97191


University of Cincinnati

20. Wenke, Sam. Application and Simulation of Neuromorphic Devices for use in Neural Networks.

Degree: MS, Engineering and Applied Science: Computer Engineering, 2018, University of Cincinnati

 Software and hardware artificial neural networks have been increasingly used to solve difficult real world problems. Neural networks have shown successful results in both the… (more)

Subjects/Keywords: Electrical Engineering; Neuromorphic Computing; Spike Proximity Correlation; Synaptic Device; ReRAM; Leaky Integrate and Fire; Simulation

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APA (6th Edition):

Wenke, S. (2018). Application and Simulation of Neuromorphic Devices for use in Neural Networks. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1523635913955071

Chicago Manual of Style (16th Edition):

Wenke, Sam. “Application and Simulation of Neuromorphic Devices for use in Neural Networks.” 2018. Masters Thesis, University of Cincinnati. Accessed April 21, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1523635913955071.

MLA Handbook (7th Edition):

Wenke, Sam. “Application and Simulation of Neuromorphic Devices for use in Neural Networks.” 2018. Web. 21 Apr 2021.

Vancouver:

Wenke S. Application and Simulation of Neuromorphic Devices for use in Neural Networks. [Internet] [Masters thesis]. University of Cincinnati; 2018. [cited 2021 Apr 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1523635913955071.

Council of Science Editors:

Wenke S. Application and Simulation of Neuromorphic Devices for use in Neural Networks. [Masters Thesis]. University of Cincinnati; 2018. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1523635913955071


University of Cincinnati

21. Olexa, Nicholas. Characterization of HfO2-based ReRam and the Development of a Physics Based Compact Model for the MIM Class of Memristive Devices.

Degree: MS, Engineering and Applied Science: Electrical Engineering, 2020, University of Cincinnati

 The characterization of HfO2 ReRam devices is critical in understanding their switching properties and potential applications. From the known switching properties, an organization of observed… (more)

Subjects/Keywords: Electrical Engineering; ReRam; HfO2; Secondary Memory; Physics-based Model; filament switching dynamics; Self-limited Reset

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Olexa, N. (2020). Characterization of HfO2-based ReRam and the Development of a Physics Based Compact Model for the MIM Class of Memristive Devices. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin159216930341664

Chicago Manual of Style (16th Edition):

Olexa, Nicholas. “Characterization of HfO2-based ReRam and the Development of a Physics Based Compact Model for the MIM Class of Memristive Devices.” 2020. Masters Thesis, University of Cincinnati. Accessed April 21, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=ucin159216930341664.

MLA Handbook (7th Edition):

Olexa, Nicholas. “Characterization of HfO2-based ReRam and the Development of a Physics Based Compact Model for the MIM Class of Memristive Devices.” 2020. Web. 21 Apr 2021.

Vancouver:

Olexa N. Characterization of HfO2-based ReRam and the Development of a Physics Based Compact Model for the MIM Class of Memristive Devices. [Internet] [Masters thesis]. University of Cincinnati; 2020. [cited 2021 Apr 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin159216930341664.

Council of Science Editors:

Olexa N. Characterization of HfO2-based ReRam and the Development of a Physics Based Compact Model for the MIM Class of Memristive Devices. [Masters Thesis]. University of Cincinnati; 2020. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin159216930341664

22. Barlas, Marios Dimitrios. Development and characterization of innovative nonvolatile OxRAM memory cells compatible with advanced nodes : Développement et caractérisation de mémoires non volatiles OxRAM innovantes fortement intégrées à des transistors SOI pour les noeuds avancés.

Degree: Docteur es, Sciences pour l'ingénieur. Micro et nanoélectronique, 2019, Aix Marseille Université

La mémoire résistive à la base des oxydes de transition métallique (ReRAM) est une classe de technologies de mémoire non volatile dans lesquelles la commutation… (more)

Subjects/Keywords: Chemin de conduction; ReRAM; OxRAM; HfO2; Si; Al; Ab-Initio; OxRAM; ReRAM; HfO2; Si; Al; Nvm; Non volatile Memory; Alloying; Percolation Path; Filament; Localization; Conductivity; Memory Array; Bit Error Rate; Xrr; Xps; Fdsoi; Process Integration; Memory

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APA (6th Edition):

Barlas, M. D. (2019). Development and characterization of innovative nonvolatile OxRAM memory cells compatible with advanced nodes : Développement et caractérisation de mémoires non volatiles OxRAM innovantes fortement intégrées à des transistors SOI pour les noeuds avancés. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2019AIXM0229

Chicago Manual of Style (16th Edition):

Barlas, Marios Dimitrios. “Development and characterization of innovative nonvolatile OxRAM memory cells compatible with advanced nodes : Développement et caractérisation de mémoires non volatiles OxRAM innovantes fortement intégrées à des transistors SOI pour les noeuds avancés.” 2019. Doctoral Dissertation, Aix Marseille Université. Accessed April 21, 2021. http://www.theses.fr/2019AIXM0229.

MLA Handbook (7th Edition):

Barlas, Marios Dimitrios. “Development and characterization of innovative nonvolatile OxRAM memory cells compatible with advanced nodes : Développement et caractérisation de mémoires non volatiles OxRAM innovantes fortement intégrées à des transistors SOI pour les noeuds avancés.” 2019. Web. 21 Apr 2021.

Vancouver:

Barlas MD. Development and characterization of innovative nonvolatile OxRAM memory cells compatible with advanced nodes : Développement et caractérisation de mémoires non volatiles OxRAM innovantes fortement intégrées à des transistors SOI pour les noeuds avancés. [Internet] [Doctoral dissertation]. Aix Marseille Université 2019. [cited 2021 Apr 21]. Available from: http://www.theses.fr/2019AIXM0229.

Council of Science Editors:

Barlas MD. Development and characterization of innovative nonvolatile OxRAM memory cells compatible with advanced nodes : Développement et caractérisation de mémoires non volatiles OxRAM innovantes fortement intégrées à des transistors SOI pour les noeuds avancés. [Doctoral Dissertation]. Aix Marseille Université 2019. Available from: http://www.theses.fr/2019AIXM0229

23. 櫻川, 康志. らせん状ポリイソシアニドを用いた抵抗変化型不揮発性有機メモリ.

Degree: Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学

Supervisor:村田 英幸

マテリアルサイエンス研究科

修士

Subjects/Keywords: ReRAM; らせん状ポリイソシアニド; メモリ; 有機メモリ

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APA (6th Edition):

櫻川, . (n.d.). らせん状ポリイソシアニドを用いた抵抗変化型不揮発性有機メモリ. (Thesis). Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10119/13562

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

櫻川, 康志. “らせん状ポリイソシアニドを用いた抵抗変化型不揮発性有機メモリ.” Thesis, Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学. Accessed April 21, 2021. http://hdl.handle.net/10119/13562.

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

櫻川, 康志. “らせん状ポリイソシアニドを用いた抵抗変化型不揮発性有機メモリ.” Web. 21 Apr 2021.

Note: this citation may be lacking information needed for this citation format:
No year of publication.

Vancouver:

櫻川 . らせん状ポリイソシアニドを用いた抵抗変化型不揮発性有機メモリ. [Internet] [Thesis]. Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学; [cited 2021 Apr 21]. Available from: http://hdl.handle.net/10119/13562.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Council of Science Editors:

櫻川 . らせん状ポリイソシアニドを用いた抵抗変化型不揮発性有機メモリ. [Thesis]. Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学; Available from: http://hdl.handle.net/10119/13562

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.


Georgia Tech

24. Ko, Sho. Efficient Pipelined ReRAM-Based Processing-In-Memory Architecture for Convolutional Neural Network Inference.

Degree: MS, Electrical and Computer Engineering, 2020, Georgia Tech

 This research work presents a design of an analog ReRAM-based PIM (processing-in-memory) architecture for fast and efficient CNN (convolutional neural network) inference. For the overall… (more)

Subjects/Keywords: hardware accelerator; ReRAM (resistive random access memory); PIM (processing-in-memory); CNN (convolutional neural network); NoC (network-on-chip); SMART flow control

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ko, S. (2020). Efficient Pipelined ReRAM-Based Processing-In-Memory Architecture for Convolutional Neural Network Inference. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/62806

Chicago Manual of Style (16th Edition):

Ko, Sho. “Efficient Pipelined ReRAM-Based Processing-In-Memory Architecture for Convolutional Neural Network Inference.” 2020. Masters Thesis, Georgia Tech. Accessed April 21, 2021. http://hdl.handle.net/1853/62806.

MLA Handbook (7th Edition):

Ko, Sho. “Efficient Pipelined ReRAM-Based Processing-In-Memory Architecture for Convolutional Neural Network Inference.” 2020. Web. 21 Apr 2021.

Vancouver:

Ko S. Efficient Pipelined ReRAM-Based Processing-In-Memory Architecture for Convolutional Neural Network Inference. [Internet] [Masters thesis]. Georgia Tech; 2020. [cited 2021 Apr 21]. Available from: http://hdl.handle.net/1853/62806.

Council of Science Editors:

Ko S. Efficient Pipelined ReRAM-Based Processing-In-Memory Architecture for Convolutional Neural Network Inference. [Masters Thesis]. Georgia Tech; 2020. Available from: http://hdl.handle.net/1853/62806


University of Adelaide

25. Wang, Peng. Long-Term Memory for Cognitive Architectures: A Hardware Approach Using Resistive Devices.

Degree: 2018, University of Adelaide

 A cognitive agent capable of reliably performing complex tasks over a long time will acquire a large store of knowledge. To interact with changing circumstances,… (more)

Subjects/Keywords: Content-addressable memory; non-volatile memory; RRAM; ReRAM; cognitive architectures; long-term memory; semantic memory; hardware acceleration; in-memory computing; memristors; resistive devices

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APA (6th Edition):

Wang, P. (2018). Long-Term Memory for Cognitive Architectures: A Hardware Approach Using Resistive Devices. (Thesis). University of Adelaide. Retrieved from http://hdl.handle.net/2440/117927

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Peng. “Long-Term Memory for Cognitive Architectures: A Hardware Approach Using Resistive Devices.” 2018. Thesis, University of Adelaide. Accessed April 21, 2021. http://hdl.handle.net/2440/117927.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Peng. “Long-Term Memory for Cognitive Architectures: A Hardware Approach Using Resistive Devices.” 2018. Web. 21 Apr 2021.

Vancouver:

Wang P. Long-Term Memory for Cognitive Architectures: A Hardware Approach Using Resistive Devices. [Internet] [Thesis]. University of Adelaide; 2018. [cited 2021 Apr 21]. Available from: http://hdl.handle.net/2440/117927.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang P. Long-Term Memory for Cognitive Architectures: A Hardware Approach Using Resistive Devices. [Thesis]. University of Adelaide; 2018. Available from: http://hdl.handle.net/2440/117927

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

26. Guitarra, Silvana Raquel. Modélisation multi-échelles des mémoires de type résistives (ReRAM) : Multi-scale modeling of resistive random access memories (ReRAM).

Degree: Docteur es, Physique, matière condensée et nanosciences, 2018, Aix-Marseille; Universidad San Francisco (Quito, Equateur)

Un modèle de commutation de mémoires résistives (ReRAM) est présenté. Celui-ci est basé sur deux hypothèses : (1) la commutation résistive est causée par des… (more)

Subjects/Keywords: Mémoires résistives (ReRAM); Commutation résistive; Caractérisation électrique; Set; Reset; Conduction ohmique; Conduction à effet tunnel assisté par piège; Tat; Hrs; Lrs; Probabilité de commutation; Resistive Random Access memories (ReRAM); Resistive switching; Electrical characterization; Set process; Reset process; Ohmic conduction; Trap assisted tunneling conduction; Tat; Hrs; Lrs; Switching probability

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APA (6th Edition):

Guitarra, S. R. (2018). Modélisation multi-échelles des mémoires de type résistives (ReRAM) : Multi-scale modeling of resistive random access memories (ReRAM). (Doctoral Dissertation). Aix-Marseille; Universidad San Francisco (Quito, Equateur). Retrieved from http://www.theses.fr/2018AIXM0537

Chicago Manual of Style (16th Edition):

Guitarra, Silvana Raquel. “Modélisation multi-échelles des mémoires de type résistives (ReRAM) : Multi-scale modeling of resistive random access memories (ReRAM).” 2018. Doctoral Dissertation, Aix-Marseille; Universidad San Francisco (Quito, Equateur). Accessed April 21, 2021. http://www.theses.fr/2018AIXM0537.

MLA Handbook (7th Edition):

Guitarra, Silvana Raquel. “Modélisation multi-échelles des mémoires de type résistives (ReRAM) : Multi-scale modeling of resistive random access memories (ReRAM).” 2018. Web. 21 Apr 2021.

Vancouver:

Guitarra SR. Modélisation multi-échelles des mémoires de type résistives (ReRAM) : Multi-scale modeling of resistive random access memories (ReRAM). [Internet] [Doctoral dissertation]. Aix-Marseille; Universidad San Francisco (Quito, Equateur); 2018. [cited 2021 Apr 21]. Available from: http://www.theses.fr/2018AIXM0537.

Council of Science Editors:

Guitarra SR. Modélisation multi-échelles des mémoires de type résistives (ReRAM) : Multi-scale modeling of resistive random access memories (ReRAM). [Doctoral Dissertation]. Aix-Marseille; Universidad San Francisco (Quito, Equateur); 2018. Available from: http://www.theses.fr/2018AIXM0537


University of Cambridge

27. Li, Hongfei. Density functional simulations of defect behavior in oxides for applications in MOSFET and resistive memory.

Degree: PhD, 2018, University of Cambridge

 Defects in the functional oxides play an important role in electronic devices like metal oxide semiconductor field effect transistors (MOSFETs) and resistive random-access memories (ReRAMs).… (more)

Subjects/Keywords: 621.3815; DFT; Defect; MOSFET; ReRAM; Simulation; CASTEP; Oxide; Interface; Reliability; Stability; GeO2; IGZO; NBIS; SBH; Oxidation; Doping; Vacancy; Defect Diffusion; Fermi level pinning; TiO2; ZnO; Passivation; Scaling; First Principles; Ab initio; Molecular dynamics; MD; Hybrid functional; Screened Exchange; HSE; sX-LDA

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APA (6th Edition):

Li, H. (2018). Density functional simulations of defect behavior in oxides for applications in MOSFET and resistive memory. (Doctoral Dissertation). University of Cambridge. Retrieved from https://doi.org/10.17863/CAM.22075 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.744712

Chicago Manual of Style (16th Edition):

Li, Hongfei. “Density functional simulations of defect behavior in oxides for applications in MOSFET and resistive memory.” 2018. Doctoral Dissertation, University of Cambridge. Accessed April 21, 2021. https://doi.org/10.17863/CAM.22075 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.744712.

MLA Handbook (7th Edition):

Li, Hongfei. “Density functional simulations of defect behavior in oxides for applications in MOSFET and resistive memory.” 2018. Web. 21 Apr 2021.

Vancouver:

Li H. Density functional simulations of defect behavior in oxides for applications in MOSFET and resistive memory. [Internet] [Doctoral dissertation]. University of Cambridge; 2018. [cited 2021 Apr 21]. Available from: https://doi.org/10.17863/CAM.22075 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.744712.

Council of Science Editors:

Li H. Density functional simulations of defect behavior in oxides for applications in MOSFET and resistive memory. [Doctoral Dissertation]. University of Cambridge; 2018. Available from: https://doi.org/10.17863/CAM.22075 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.744712

28. Dandamudi, Pradeep. Resistance Switching in Chalcogenide based Programmable Metallization Cells (PMC) and Sensors under Gamma-Rays.

Degree: PhD, Electrical Engineering, 2013, Arizona State University

 Chalcogenide glass (ChG) materials have gained wide attention because of their applications in conductive bridge random access memory (CBRAM), phase change memories (PC-RAM), optical rewritable… (more)

Subjects/Keywords: Electrical engineering; Gamma Radiation-Hard; Radiation Sensors; ReRAM/RRAM/CBRAM; Resistive Memories

…category of Resistance change RAM’s (ReRAM/RRAM). CBRAM is classified under the… …PCM), magnetoresistive memories (MRAM), and resistive memories (ReRAM… …technologies [61]-[72]. Various ReRAM switching materials have shown radiation… …Metallization Cells (PMC) based ReRAM cells and highlight methods for reducing radiation… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Dandamudi, P. (2013). Resistance Switching in Chalcogenide based Programmable Metallization Cells (PMC) and Sensors under Gamma-Rays. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/20918

Chicago Manual of Style (16th Edition):

Dandamudi, Pradeep. “Resistance Switching in Chalcogenide based Programmable Metallization Cells (PMC) and Sensors under Gamma-Rays.” 2013. Doctoral Dissertation, Arizona State University. Accessed April 21, 2021. http://repository.asu.edu/items/20918.

MLA Handbook (7th Edition):

Dandamudi, Pradeep. “Resistance Switching in Chalcogenide based Programmable Metallization Cells (PMC) and Sensors under Gamma-Rays.” 2013. Web. 21 Apr 2021.

Vancouver:

Dandamudi P. Resistance Switching in Chalcogenide based Programmable Metallization Cells (PMC) and Sensors under Gamma-Rays. [Internet] [Doctoral dissertation]. Arizona State University; 2013. [cited 2021 Apr 21]. Available from: http://repository.asu.edu/items/20918.

Council of Science Editors:

Dandamudi P. Resistance Switching in Chalcogenide based Programmable Metallization Cells (PMC) and Sensors under Gamma-Rays. [Doctoral Dissertation]. Arizona State University; 2013. Available from: http://repository.asu.edu/items/20918

29. Lu, Yang. Quantum Electronic Interference In Nano Amorphous Silicon And Other Thin Film Resistance Memory.

Degree: 2017, University of Pennsylvania

 This thesis describes conductivity in amorphous semiconductors and insulators—some doped with metals, in which elastic electrons can random walk across a transport length of ~10… (more)

Subjects/Keywords: Electron-phonon interaction; Metal-insulator transition; Quantum electoronic interference; ReRAM; Resistance memory; Weak localization; Mechanics of Materials; Physics

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lu, Y. (2017). Quantum Electronic Interference In Nano Amorphous Silicon And Other Thin Film Resistance Memory. (Thesis). University of Pennsylvania. Retrieved from https://repository.upenn.edu/edissertations/3020

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, Yang. “Quantum Electronic Interference In Nano Amorphous Silicon And Other Thin Film Resistance Memory.” 2017. Thesis, University of Pennsylvania. Accessed April 21, 2021. https://repository.upenn.edu/edissertations/3020.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, Yang. “Quantum Electronic Interference In Nano Amorphous Silicon And Other Thin Film Resistance Memory.” 2017. Web. 21 Apr 2021.

Vancouver:

Lu Y. Quantum Electronic Interference In Nano Amorphous Silicon And Other Thin Film Resistance Memory. [Internet] [Thesis]. University of Pennsylvania; 2017. [cited 2021 Apr 21]. Available from: https://repository.upenn.edu/edissertations/3020.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu Y. Quantum Electronic Interference In Nano Amorphous Silicon And Other Thin Film Resistance Memory. [Thesis]. University of Pennsylvania; 2017. Available from: https://repository.upenn.edu/edissertations/3020

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

30. Li, Hongfei. Density Functional Simulations of Defect Behavior in Oxides for Applications in MOSFET and Resistive Memory.

Degree: PhD, 2018, University of Cambridge

 Defects in the functional oxides play an important role in electronic devices like metal oxide semiconductor field effect transistors (MOSFETs) and resistive random-access memories (ReRAMs).… (more)

Subjects/Keywords: DFT; Defect; MOSFET; ReRAM; Simulation; CASTEP; Oxide; Interface; Reliability; Stability; GeO2; IGZO; NBIS; SBH; Oxidation; Doping; Vacancy; Defect Diffusion; Fermi level pinning; TiO2; ZnO; Passivation; Scaling; First Principles; Ab initio; Molecular dynamics; MD; Hybrid functional; Screened Exchange; HSE; sX-LDA

…95 Chapter 6. Oxygen vacancy in TiO2 for Application in ReRAM… …hand, ReRAM works by formation and rupture of O vacancy conducting filaments, while how this… …conducting filament in ReRAM, which makes TiO2 a good candidate for ReRAM materials. In chapter 7… …The Resistive Random Access Memory (ReRAM) is believed to be able to circumvent… …ReRAM based on resistance switching (RS) phenomenon attracts much attention in… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, H. (2018). Density Functional Simulations of Defect Behavior in Oxides for Applications in MOSFET and Resistive Memory. (Doctoral Dissertation). University of Cambridge. Retrieved from https://www.repository.cam.ac.uk/handle/1810/274924

Chicago Manual of Style (16th Edition):

Li, Hongfei. “Density Functional Simulations of Defect Behavior in Oxides for Applications in MOSFET and Resistive Memory.” 2018. Doctoral Dissertation, University of Cambridge. Accessed April 21, 2021. https://www.repository.cam.ac.uk/handle/1810/274924.

MLA Handbook (7th Edition):

Li, Hongfei. “Density Functional Simulations of Defect Behavior in Oxides for Applications in MOSFET and Resistive Memory.” 2018. Web. 21 Apr 2021.

Vancouver:

Li H. Density Functional Simulations of Defect Behavior in Oxides for Applications in MOSFET and Resistive Memory. [Internet] [Doctoral dissertation]. University of Cambridge; 2018. [cited 2021 Apr 21]. Available from: https://www.repository.cam.ac.uk/handle/1810/274924.

Council of Science Editors:

Li H. Density Functional Simulations of Defect Behavior in Oxides for Applications in MOSFET and Resistive Memory. [Doctoral Dissertation]. University of Cambridge; 2018. Available from: https://www.repository.cam.ac.uk/handle/1810/274924

.