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You searched for subject:(Random access memory). Showing records 1 – 30 of 122 total matches.

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Portland State University

1. Suzuki, Satoshi. The Development of Embedded DRAM Statistical Quality Models at Test and Use Conditions.

Degree: MS(M.S.) in Electrical and Computer Engineering, Electrical and Computer Engineering, 2010, Portland State University

  Today, the use of embedded Dynamic Random Access Memory (eDRAM) is increasing in our electronics that require large memories, such as gaming consoles and… (more)

Subjects/Keywords: Random access memory  – Reliability; Random access memory  – Testing

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APA (6th Edition):

Suzuki, S. (2010). The Development of Embedded DRAM Statistical Quality Models at Test and Use Conditions. (Masters Thesis). Portland State University. Retrieved from http://pdxscholar.library.pdx.edu/open_access_etds/341

Chicago Manual of Style (16th Edition):

Suzuki, Satoshi. “The Development of Embedded DRAM Statistical Quality Models at Test and Use Conditions.” 2010. Masters Thesis, Portland State University. Accessed September 19, 2019. http://pdxscholar.library.pdx.edu/open_access_etds/341.

MLA Handbook (7th Edition):

Suzuki, Satoshi. “The Development of Embedded DRAM Statistical Quality Models at Test and Use Conditions.” 2010. Web. 19 Sep 2019.

Vancouver:

Suzuki S. The Development of Embedded DRAM Statistical Quality Models at Test and Use Conditions. [Internet] [Masters thesis]. Portland State University; 2010. [cited 2019 Sep 19]. Available from: http://pdxscholar.library.pdx.edu/open_access_etds/341.

Council of Science Editors:

Suzuki S. The Development of Embedded DRAM Statistical Quality Models at Test and Use Conditions. [Masters Thesis]. Portland State University; 2010. Available from: http://pdxscholar.library.pdx.edu/open_access_etds/341


NSYSU

2. Syu, Yong-En. Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices.

Degree: PhD, Physics, 2012, NSYSU

 Resistive Random Access Memory (RRAM) is considered as the most promising candidate for the next-generation nonvolatile memories due to their superior properties such as low… (more)

Subjects/Keywords: Resistive Random Access Memory (RRAM); Nonvolatile memory

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APA (6th Edition):

Syu, Y. (2012). Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425

Chicago Manual of Style (16th Edition):

Syu, Yong-En. “Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices.” 2012. Doctoral Dissertation, NSYSU. Accessed September 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425.

MLA Handbook (7th Edition):

Syu, Yong-En. “Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices.” 2012. Web. 19 Sep 2019.

Vancouver:

Syu Y. Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices. [Internet] [Doctoral dissertation]. NSYSU; 2012. [cited 2019 Sep 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425.

Council of Science Editors:

Syu Y. Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices. [Doctoral Dissertation]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425


Oregon State University

3. Murali, Santosh. Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory.

Degree: MS, Electrical and Computer Engineering, 2011, Oregon State University

 Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals. Also… (more)

Subjects/Keywords: Non-volatile memory; Random access memory

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APA (6th Edition):

Murali, S. (2011). Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/26622

Chicago Manual of Style (16th Edition):

Murali, Santosh. “Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory.” 2011. Masters Thesis, Oregon State University. Accessed September 19, 2019. http://hdl.handle.net/1957/26622.

MLA Handbook (7th Edition):

Murali, Santosh. “Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory.” 2011. Web. 19 Sep 2019.

Vancouver:

Murali S. Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory. [Internet] [Masters thesis]. Oregon State University; 2011. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/1957/26622.

Council of Science Editors:

Murali S. Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory. [Masters Thesis]. Oregon State University; 2011. Available from: http://hdl.handle.net/1957/26622


Oregon State University

4. Gang, Yung-jin, 1957-. Ultra low voltage DRAM current sense amplifier with body bias techniques.

Degree: PhD, Electrical and Computer Engineering, 1998, Oregon State University

 The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction… (more)

Subjects/Keywords: Random access memory

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APA (6th Edition):

Gang, Yung-jin, 1. (1998). Ultra low voltage DRAM current sense amplifier with body bias techniques. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/33344

Chicago Manual of Style (16th Edition):

Gang, Yung-jin, 1957-. “Ultra low voltage DRAM current sense amplifier with body bias techniques.” 1998. Doctoral Dissertation, Oregon State University. Accessed September 19, 2019. http://hdl.handle.net/1957/33344.

MLA Handbook (7th Edition):

Gang, Yung-jin, 1957-. “Ultra low voltage DRAM current sense amplifier with body bias techniques.” 1998. Web. 19 Sep 2019.

Vancouver:

Gang, Yung-jin 1. Ultra low voltage DRAM current sense amplifier with body bias techniques. [Internet] [Doctoral dissertation]. Oregon State University; 1998. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/1957/33344.

Council of Science Editors:

Gang, Yung-jin 1. Ultra low voltage DRAM current sense amplifier with body bias techniques. [Doctoral Dissertation]. Oregon State University; 1998. Available from: http://hdl.handle.net/1957/33344


University of New South Wales

5. Lin, Xi. Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications.

Degree: Materials Science & Engineering, 2013, University of New South Wales

 Resistive random access memory (RRAM), one of the next generation memory technologies, has been drawn a lot of attention in both fundamental and applied research.… (more)

Subjects/Keywords: Nanocubes; Resistive random access memory; Perovskite oxide

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APA (6th Edition):

Lin, X. (2013). Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications. (Masters Thesis). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/52770 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11443/SOURCE01?view=true

Chicago Manual of Style (16th Edition):

Lin, Xi. “Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications.” 2013. Masters Thesis, University of New South Wales. Accessed September 19, 2019. http://handle.unsw.edu.au/1959.4/52770 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11443/SOURCE01?view=true.

MLA Handbook (7th Edition):

Lin, Xi. “Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications.” 2013. Web. 19 Sep 2019.

Vancouver:

Lin X. Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications. [Internet] [Masters thesis]. University of New South Wales; 2013. [cited 2019 Sep 19]. Available from: http://handle.unsw.edu.au/1959.4/52770 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11443/SOURCE01?view=true.

Council of Science Editors:

Lin X. Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications. [Masters Thesis]. University of New South Wales; 2013. Available from: http://handle.unsw.edu.au/1959.4/52770 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11443/SOURCE01?view=true


University of Illinois – Urbana-Champaign

6. Jain, Prabhat. Refrint: intelligent refresh to minimize power in on-chip multiprocessor cache hierarchies.

Degree: MS, 0112, 2012, University of Illinois – Urbana-Champaign

 As manycores use dynamic energy ever more efficiently, static power consumption becomes a major concern. In particular, in a large manycore running at a low… (more)

Subjects/Keywords: Static random-access memory (SRAM); Embedded dynamic random-access memory (eDRAM); memory hierarchy; computer architecture; leakage; refresh power

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APA (6th Edition):

Jain, P. (2012). Refrint: intelligent refresh to minimize power in on-chip multiprocessor cache hierarchies. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/34585

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jain, Prabhat. “Refrint: intelligent refresh to minimize power in on-chip multiprocessor cache hierarchies.” 2012. Thesis, University of Illinois – Urbana-Champaign. Accessed September 19, 2019. http://hdl.handle.net/2142/34585.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jain, Prabhat. “Refrint: intelligent refresh to minimize power in on-chip multiprocessor cache hierarchies.” 2012. Web. 19 Sep 2019.

Vancouver:

Jain P. Refrint: intelligent refresh to minimize power in on-chip multiprocessor cache hierarchies. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/2142/34585.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jain P. Refrint: intelligent refresh to minimize power in on-chip multiprocessor cache hierarchies. [Thesis]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/34585

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

7. Wei, Zhewei. Classic and new data structure problems in external memory.

Degree: 2012, Hong Kong University of Science and Technology

 The demand of efficient data structures for query processing on massive data sets has grown tremendously in the past decades. Traditionally, data structures are designed… (more)

Subjects/Keywords: Random access memory; Data structures (Computer science); Memory management (Computer science)

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APA (6th Edition):

Wei, Z. (2012). Classic and new data structure problems in external memory. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1176705 ; http://repository.ust.hk/ir/bitstream/1783.1-7529/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wei, Zhewei. “Classic and new data structure problems in external memory.” 2012. Thesis, Hong Kong University of Science and Technology. Accessed September 19, 2019. https://doi.org/10.14711/thesis-b1176705 ; http://repository.ust.hk/ir/bitstream/1783.1-7529/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wei, Zhewei. “Classic and new data structure problems in external memory.” 2012. Web. 19 Sep 2019.

Vancouver:

Wei Z. Classic and new data structure problems in external memory. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2012. [cited 2019 Sep 19]. Available from: https://doi.org/10.14711/thesis-b1176705 ; http://repository.ust.hk/ir/bitstream/1783.1-7529/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wei Z. Classic and new data structure problems in external memory. [Thesis]. Hong Kong University of Science and Technology; 2012. Available from: https://doi.org/10.14711/thesis-b1176705 ; http://repository.ust.hk/ir/bitstream/1783.1-7529/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Waterloo

8. Hosseini-Salekdeh, Seyed-Rambod. A Comparative Analysis of 6T and 10T SRAM Cells for Sub-threshold Operation in 65 nm CMOS Technology.

Degree: 2016, University of Waterloo

 The aggressive approach of the integrated electronics industry towards scaling and the growing trend of low-power applications have led to major research interest in ultra-low… (more)

Subjects/Keywords: SRAM; VLSI; transistor; Integrated Cicuit; Memory; Random Access Memory; Subthreshold

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APA (6th Edition):

Hosseini-Salekdeh, S. (2016). A Comparative Analysis of 6T and 10T SRAM Cells for Sub-threshold Operation in 65 nm CMOS Technology. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/10932

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hosseini-Salekdeh, Seyed-Rambod. “A Comparative Analysis of 6T and 10T SRAM Cells for Sub-threshold Operation in 65 nm CMOS Technology.” 2016. Thesis, University of Waterloo. Accessed September 19, 2019. http://hdl.handle.net/10012/10932.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hosseini-Salekdeh, Seyed-Rambod. “A Comparative Analysis of 6T and 10T SRAM Cells for Sub-threshold Operation in 65 nm CMOS Technology.” 2016. Web. 19 Sep 2019.

Vancouver:

Hosseini-Salekdeh S. A Comparative Analysis of 6T and 10T SRAM Cells for Sub-threshold Operation in 65 nm CMOS Technology. [Internet] [Thesis]. University of Waterloo; 2016. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/10012/10932.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hosseini-Salekdeh S. A Comparative Analysis of 6T and 10T SRAM Cells for Sub-threshold Operation in 65 nm CMOS Technology. [Thesis]. University of Waterloo; 2016. Available from: http://hdl.handle.net/10012/10932

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Michigan

9. Kim, Kuk-Hwan. High Density Crossbar Structure for Memory Application.

Degree: PhD, Electrical Engineering, 2011, University of Michigan

 In this thesis study, we utilized two-terminal resistive devices to construct high-density crossbar arrays for memory and logic applications. The performance advantages of the devices… (more)

Subjects/Keywords: Crossbar Memory Array; Resistance Random Access Memory; Electrical Engineering; Engineering

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APA (6th Edition):

Kim, K. (2011). High Density Crossbar Structure for Memory Application. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/89645

Chicago Manual of Style (16th Edition):

Kim, Kuk-Hwan. “High Density Crossbar Structure for Memory Application.” 2011. Doctoral Dissertation, University of Michigan. Accessed September 19, 2019. http://hdl.handle.net/2027.42/89645.

MLA Handbook (7th Edition):

Kim, Kuk-Hwan. “High Density Crossbar Structure for Memory Application.” 2011. Web. 19 Sep 2019.

Vancouver:

Kim K. High Density Crossbar Structure for Memory Application. [Internet] [Doctoral dissertation]. University of Michigan; 2011. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/2027.42/89645.

Council of Science Editors:

Kim K. High Density Crossbar Structure for Memory Application. [Doctoral Dissertation]. University of Michigan; 2011. Available from: http://hdl.handle.net/2027.42/89645


NSYSU

10. Hsieh, Chia-Lung. A Single-ended 5T and 6T Load-less SRAM with Low Energy Access.

Degree: Master, Electrical Engineering, 2017, NSYSU

 This thesis covers two topics, including single-ended 5T and 6T load-less SRAMs with low energy access. Prototypes of the two designs are realized using TSMC… (more)

Subjects/Keywords: energy per access; load-less; single-ended; leakage current; static random access memory

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APA (6th Edition):

Hsieh, C. (2017). A Single-ended 5T and 6T Load-less SRAM with Low Energy Access. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0606117-164916

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsieh, Chia-Lung. “A Single-ended 5T and 6T Load-less SRAM with Low Energy Access.” 2017. Thesis, NSYSU. Accessed September 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0606117-164916.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsieh, Chia-Lung. “A Single-ended 5T and 6T Load-less SRAM with Low Energy Access.” 2017. Web. 19 Sep 2019.

Vancouver:

Hsieh C. A Single-ended 5T and 6T Load-less SRAM with Low Energy Access. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Sep 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0606117-164916.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsieh C. A Single-ended 5T and 6T Load-less SRAM with Low Energy Access. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0606117-164916

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

11. Albert Raj, A. FPGA implementation of an efficient Routing filter design; -.

Degree: Information and Communication Engineering, 2014, Anna University

The internet consists of a large collection of routers forming a newlinemesh The routers are connected to each other by a variety of newlinecommunication links… (more)

Subjects/Keywords: Dynamic Random Access Memory; information and communication engineering; Internet Protocol

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APA (6th Edition):

Albert Raj, A. (2014). FPGA implementation of an efficient Routing filter design; -. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/26971

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Albert Raj, A. “FPGA implementation of an efficient Routing filter design; -.” 2014. Thesis, Anna University. Accessed September 19, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/26971.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Albert Raj, A. “FPGA implementation of an efficient Routing filter design; -.” 2014. Web. 19 Sep 2019.

Vancouver:

Albert Raj A. FPGA implementation of an efficient Routing filter design; -. [Internet] [Thesis]. Anna University; 2014. [cited 2019 Sep 19]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/26971.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Albert Raj A. FPGA implementation of an efficient Routing filter design; -. [Thesis]. Anna University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/26971

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

12. Ciou, Jian-Fa. Study on Diamond-Like Carbon Resistive Random Access Memory.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2014, NSYSU

 In recent study, C doped SiO2 was found as a dielectric layer exhibiting a very good RRAM performance. The resistive switching mechanism of C:SiO2 RRAM… (more)

Subjects/Keywords: Resistance Random access memory; diamond-like carbon; hydrogenating

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APA (6th Edition):

Ciou, J. (2014). Study on Diamond-Like Carbon Resistive Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-102905

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ciou, Jian-Fa. “Study on Diamond-Like Carbon Resistive Random Access Memory.” 2014. Thesis, NSYSU. Accessed September 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-102905.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ciou, Jian-Fa. “Study on Diamond-Like Carbon Resistive Random Access Memory.” 2014. Web. 19 Sep 2019.

Vancouver:

Ciou J. Study on Diamond-Like Carbon Resistive Random Access Memory. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Sep 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-102905.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ciou J. Study on Diamond-Like Carbon Resistive Random Access Memory. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-102905

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

13. Zhu, Hong. Power efficiency and reliability enhancement techniques in SRAM circuits.

Degree: 2014, Hong Kong University of Science and Technology

 The amount of embedded Static Random-Access Memory (SRAM) is increased to meet the performance requirements in each new microprocessor generation. Reliability of memory circuits is… (more)

Subjects/Keywords: Random access memory; Electronic circuit design; Integrated circuits; Semiconductor storage devices

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APA (6th Edition):

Zhu, H. (2014). Power efficiency and reliability enhancement techniques in SRAM circuits. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1432172 ; http://repository.ust.hk/ir/bitstream/1783.1-72516/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhu, Hong. “Power efficiency and reliability enhancement techniques in SRAM circuits.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed September 19, 2019. https://doi.org/10.14711/thesis-b1432172 ; http://repository.ust.hk/ir/bitstream/1783.1-72516/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhu, Hong. “Power efficiency and reliability enhancement techniques in SRAM circuits.” 2014. Web. 19 Sep 2019.

Vancouver:

Zhu H. Power efficiency and reliability enhancement techniques in SRAM circuits. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2019 Sep 19]. Available from: https://doi.org/10.14711/thesis-b1432172 ; http://repository.ust.hk/ir/bitstream/1783.1-72516/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhu H. Power efficiency and reliability enhancement techniques in SRAM circuits. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: https://doi.org/10.14711/thesis-b1432172 ; http://repository.ust.hk/ir/bitstream/1783.1-72516/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Toronto

14. Huda, Safeen. Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory.

Degree: 2012, University of Toronto

This thesis presents the modeling and design of memory cells for Spin Torque Transfer Magnetoresistive Random Access Memory (STT-MRAM). The theory of operation of STT-MRAM… (more)

Subjects/Keywords: Computer Hardware; Random Access Memory; Spintronics; Non-volatile; MRAM; 0544

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APA (6th Edition):

Huda, S. (2012). Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory. (Masters Thesis). University of Toronto. Retrieved from http://hdl.handle.net/1807/42393

Chicago Manual of Style (16th Edition):

Huda, Safeen. “Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory.” 2012. Masters Thesis, University of Toronto. Accessed September 19, 2019. http://hdl.handle.net/1807/42393.

MLA Handbook (7th Edition):

Huda, Safeen. “Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory.” 2012. Web. 19 Sep 2019.

Vancouver:

Huda S. Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory. [Internet] [Masters thesis]. University of Toronto; 2012. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/1807/42393.

Council of Science Editors:

Huda S. Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory. [Masters Thesis]. University of Toronto; 2012. Available from: http://hdl.handle.net/1807/42393


University of Illinois – Urbana-Champaign

15. Yeo, Eng Guan. Transient Phase-Change Effect in Phase-Change Memory Devices.

Degree: MS, Electrical and Computer Engineering, 2009, University of Illinois – Urbana-Champaign

 Phase-change random access memory (PCRAM) is one of the next-generation memories with the most potential due to its many good characteristics, such as nonvolatility, high… (more)

Subjects/Keywords: phase-change; transient effect; Phase-change random access memory (PCRAM)

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APA (6th Edition):

Yeo, E. G. (2009). Transient Phase-Change Effect in Phase-Change Memory Devices. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/11983

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yeo, Eng Guan. “Transient Phase-Change Effect in Phase-Change Memory Devices.” 2009. Thesis, University of Illinois – Urbana-Champaign. Accessed September 19, 2019. http://hdl.handle.net/2142/11983.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yeo, Eng Guan. “Transient Phase-Change Effect in Phase-Change Memory Devices.” 2009. Web. 19 Sep 2019.

Vancouver:

Yeo EG. Transient Phase-Change Effect in Phase-Change Memory Devices. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2009. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/2142/11983.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yeo EG. Transient Phase-Change Effect in Phase-Change Memory Devices. [Thesis]. University of Illinois – Urbana-Champaign; 2009. Available from: http://hdl.handle.net/2142/11983

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Texas – Austin

16. -8287-8903. Multistate spin-transfer-torque random access memory.

Degree: MSin Engineering, Electrical and Computer engineering, 2016, University of Texas – Austin

 Spin-transfer-torque random access memory (STT-RAM) is an emerging non-volatile memory technology that stores information as the relative alignment of two ferromagnets in a magnetic tunnel… (more)

Subjects/Keywords: Multistate spin transfer torque random access memory; Multi-bit; STTRAM; MRAM

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APA (6th Edition):

-8287-8903. (2016). Multistate spin-transfer-torque random access memory. (Masters Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/41498

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-8287-8903. “Multistate spin-transfer-torque random access memory.” 2016. Masters Thesis, University of Texas – Austin. Accessed September 19, 2019. http://hdl.handle.net/2152/41498.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-8287-8903. “Multistate spin-transfer-torque random access memory.” 2016. Web. 19 Sep 2019.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-8287-8903. Multistate spin-transfer-torque random access memory. [Internet] [Masters thesis]. University of Texas – Austin; 2016. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/2152/41498.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-8287-8903. Multistate spin-transfer-torque random access memory. [Masters Thesis]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/41498

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


NSYSU

17. Chen, I-chieh. The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 With the improvement of nano technology, semiconductor devices would be scaled down and face the physic limitation. Therefore, it is unavoidably to study on the… (more)

Subjects/Keywords: Nonvolatile memory (NVM); Resistive Random Access Memory (RRAM); Ag-Cu alloy; conducting mechanism; ion migration

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APA (6th Edition):

Chen, I. (2016). The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0103116-211016

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, I-chieh. “The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory.” 2016. Thesis, NSYSU. Accessed September 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0103116-211016.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, I-chieh. “The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory.” 2016. Web. 19 Sep 2019.

Vancouver:

Chen I. The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Sep 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0103116-211016.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen I. The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0103116-211016

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

18. Zhang, Yin PHYS. Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory.

Degree: 2018, Hong Kong University of Science and Technology

 This thesis investigates the dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory (SOT-MRAM) in two aspects: (1) the general expressions of the dynamic magnetic… (more)

Subjects/Keywords: Random access memory; Effect of magnetism on; Magnetic memory (Computers); Magnetic susceptibility; Ferromagnetic resonance

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APA (6th Edition):

Zhang, Y. P. (2018). Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-991012660069403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97479/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Yin PHYS. “Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed September 19, 2019. https://doi.org/10.14711/thesis-991012660069403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97479/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Yin PHYS. “Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory.” 2018. Web. 19 Sep 2019.

Vancouver:

Zhang YP. Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2019 Sep 19]. Available from: https://doi.org/10.14711/thesis-991012660069403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97479/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang YP. Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: https://doi.org/10.14711/thesis-991012660069403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97479/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

19. Yeo, Eng Guan. Transient phase change effect in phase change memory devices.

Degree: PhD, 1200, 2011, University of Illinois – Urbana-Champaign

 Phase change random access memory (PCRAM) is a leading contender for next generation nonvolatile memory. The phase change mechanism from high resistance amorphous phase to… (more)

Subjects/Keywords: phase change memory; Phase change random access memory (PCRAM); transient effect; time-resolved; filament

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yeo, E. G. (2011). Transient phase change effect in phase change memory devices. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18640

Chicago Manual of Style (16th Edition):

Yeo, Eng Guan. “Transient phase change effect in phase change memory devices.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed September 19, 2019. http://hdl.handle.net/2142/18640.

MLA Handbook (7th Edition):

Yeo, Eng Guan. “Transient phase change effect in phase change memory devices.” 2011. Web. 19 Sep 2019.

Vancouver:

Yeo EG. Transient phase change effect in phase change memory devices. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/2142/18640.

Council of Science Editors:

Yeo EG. Transient phase change effect in phase change memory devices. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18640


University of Kentucky

20. Chen, Zhi. Power-Efficient and Low-Latency Memory Access for CMP Systems with Heterogeneous Scratchpad On-Chip Memory.

Degree: 2013, University of Kentucky

 The gradually widening speed disparity of between CPU and memory has become an overwhelming bottleneck for the development of Chip Multiprocessor (CMP) systems. In addition,… (more)

Subjects/Keywords: Heterogeneousmemory; magnetic randomaccess memory; MRAM; Zerocapacitor random access memory; Z-RAM; scratchpad memory; scheduling; Computer and Systems Architecture

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APA (6th Edition):

Chen, Z. (2013). Power-Efficient and Low-Latency Memory Access for CMP Systems with Heterogeneous Scratchpad On-Chip Memory. (Masters Thesis). University of Kentucky. Retrieved from http://uknowledge.uky.edu/ece_etds/25

Chicago Manual of Style (16th Edition):

Chen, Zhi. “Power-Efficient and Low-Latency Memory Access for CMP Systems with Heterogeneous Scratchpad On-Chip Memory.” 2013. Masters Thesis, University of Kentucky. Accessed September 19, 2019. http://uknowledge.uky.edu/ece_etds/25.

MLA Handbook (7th Edition):

Chen, Zhi. “Power-Efficient and Low-Latency Memory Access for CMP Systems with Heterogeneous Scratchpad On-Chip Memory.” 2013. Web. 19 Sep 2019.

Vancouver:

Chen Z. Power-Efficient and Low-Latency Memory Access for CMP Systems with Heterogeneous Scratchpad On-Chip Memory. [Internet] [Masters thesis]. University of Kentucky; 2013. [cited 2019 Sep 19]. Available from: http://uknowledge.uky.edu/ece_etds/25.

Council of Science Editors:

Chen Z. Power-Efficient and Low-Latency Memory Access for CMP Systems with Heterogeneous Scratchpad On-Chip Memory. [Masters Thesis]. University of Kentucky; 2013. Available from: http://uknowledge.uky.edu/ece_etds/25


EPFL

21. Sandrini, Jury. Fabrication, Characterization and Integration of Resistive Random Access Memories.

Degree: 2017, EPFL

 The functionalities and performances of today's computing systems are increasingly dependent on the memory block. This phenomenon, also referred as the Von Neumann bottleneck, is… (more)

Subjects/Keywords: nanotechnology; emerging memory technology; non volatile memory; resistive random access memory; ReRAM; bipolar resistive switching; selector device; CMOS integration.

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APA (6th Edition):

Sandrini, J. (2017). Fabrication, Characterization and Integration of Resistive Random Access Memories. (Thesis). EPFL. Retrieved from http://infoscience.epfl.ch/record/232411

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sandrini, Jury. “Fabrication, Characterization and Integration of Resistive Random Access Memories.” 2017. Thesis, EPFL. Accessed September 19, 2019. http://infoscience.epfl.ch/record/232411.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sandrini, Jury. “Fabrication, Characterization and Integration of Resistive Random Access Memories.” 2017. Web. 19 Sep 2019.

Vancouver:

Sandrini J. Fabrication, Characterization and Integration of Resistive Random Access Memories. [Internet] [Thesis]. EPFL; 2017. [cited 2019 Sep 19]. Available from: http://infoscience.epfl.ch/record/232411.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sandrini J. Fabrication, Characterization and Integration of Resistive Random Access Memories. [Thesis]. EPFL; 2017. Available from: http://infoscience.epfl.ch/record/232411

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

22. Xiong, Feng. Scaling study of phase change memory using carbon nanotube electrodes.

Degree: PhD, 1200, 2014, University of Illinois – Urbana-Champaign

 Demands for data storage and computer memory are growing exponentially. It is thus essential to find a new scalable, energy-efficient memory technology. We have been… (more)

Subjects/Keywords: Phase change material (PCM); Phase Change Memory; Carbon Nanotube (CNT); Finite Element Model; Resistive Memory; Resistive random access memory (RRAM); Crossbar

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APA (6th Edition):

Xiong, F. (2014). Scaling study of phase change memory using carbon nanotube electrodes. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/49709

Chicago Manual of Style (16th Edition):

Xiong, Feng. “Scaling study of phase change memory using carbon nanotube electrodes.” 2014. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed September 19, 2019. http://hdl.handle.net/2142/49709.

MLA Handbook (7th Edition):

Xiong, Feng. “Scaling study of phase change memory using carbon nanotube electrodes.” 2014. Web. 19 Sep 2019.

Vancouver:

Xiong F. Scaling study of phase change memory using carbon nanotube electrodes. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2014. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/2142/49709.

Council of Science Editors:

Xiong F. Scaling study of phase change memory using carbon nanotube electrodes. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/49709


UCLA

23. Li, Xiang. Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory.

Degree: Electrical Engineering, 2018, UCLA

 Magnetic memory that utilizes spin to store information has become one of the most promising candidates for next-generation non-volatile memory. Electric-field-assisted writing of magnetic tunnel… (more)

Subjects/Keywords: Electrical engineering; Computer engineering; Nanotechnology; Embedded; Interface; Magnetism; MRAM; Random access memory; Voltage control

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APA (6th Edition):

Li, X. (2018). Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/2t0089x7

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Xiang. “Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory.” 2018. Thesis, UCLA. Accessed September 19, 2019. http://www.escholarship.org/uc/item/2t0089x7.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Xiang. “Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory.” 2018. Web. 19 Sep 2019.

Vancouver:

Li X. Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory. [Internet] [Thesis]. UCLA; 2018. [cited 2019 Sep 19]. Available from: http://www.escholarship.org/uc/item/2t0089x7.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li X. Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory. [Thesis]. UCLA; 2018. Available from: http://www.escholarship.org/uc/item/2t0089x7

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Pan, Chih-Hung. Study on Resistive Switching Mechanism of Oxide-based RRAM Device.

Degree: PhD, Materials and Optoelectronic Science, 2017, NSYSU

 With the continuous advancement of technology, applications in the Internet of things (IoT) will become widespread, and even integrated to many peopleâs daily lives. According… (more)

Subjects/Keywords: Resistance Random Access Memory; Resistance Switching Mechanism; Series Resistance; Indium Tin Oxide; Electrical Field Simulation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pan, C. (2017). Study on Resistive Switching Mechanism of Oxide-based RRAM Device. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624117-135118

Chicago Manual of Style (16th Edition):

Pan, Chih-Hung. “Study on Resistive Switching Mechanism of Oxide-based RRAM Device.” 2017. Doctoral Dissertation, NSYSU. Accessed September 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624117-135118.

MLA Handbook (7th Edition):

Pan, Chih-Hung. “Study on Resistive Switching Mechanism of Oxide-based RRAM Device.” 2017. Web. 19 Sep 2019.

Vancouver:

Pan C. Study on Resistive Switching Mechanism of Oxide-based RRAM Device. [Internet] [Doctoral dissertation]. NSYSU; 2017. [cited 2019 Sep 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624117-135118.

Council of Science Editors:

Pan C. Study on Resistive Switching Mechanism of Oxide-based RRAM Device. [Doctoral Dissertation]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624117-135118


Anna University

25. Sivamangai N M. Investigations on techniques for power reduction and failure detection in SRAM;.

Degree: 2013, Anna University

With each new CMOS technology generation, the functional correctness of the design and design parameters become more sensitive to the increasing subthreshold leakage current and… (more)

Subjects/Keywords: Power reduction; failure detection; Static Random Access Memory; Adaptive Body Bias; Reverse Body Bias

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APA (6th Edition):

M, S. N. (2013). Investigations on techniques for power reduction and failure detection in SRAM;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/13653

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

M, Sivamangai N. “Investigations on techniques for power reduction and failure detection in SRAM;.” 2013. Thesis, Anna University. Accessed September 19, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/13653.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

M, Sivamangai N. “Investigations on techniques for power reduction and failure detection in SRAM;.” 2013. Web. 19 Sep 2019.

Vancouver:

M SN. Investigations on techniques for power reduction and failure detection in SRAM;. [Internet] [Thesis]. Anna University; 2013. [cited 2019 Sep 19]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/13653.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

M SN. Investigations on techniques for power reduction and failure detection in SRAM;. [Thesis]. Anna University; 2013. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/13653

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Portland State University

26. Chapman, Erin Elizabeth. A Survey and Analysis of Solutions to the Oblivious Memory Access Problem.

Degree: MS(M.S.) in Computer Science, Computer Science, 2012, Portland State University

  Despite the use of strong encryption schemes, one can still learn information about encrypted data using side channel attacks [2]. Watching what physical memory(more)

Subjects/Keywords: Data encryption (Computer science); Software protection; Random access memory; Computer Sciences; Information Security

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APA (6th Edition):

Chapman, E. E. (2012). A Survey and Analysis of Solutions to the Oblivious Memory Access Problem. (Masters Thesis). Portland State University. Retrieved from https://pdxscholar.library.pdx.edu/open_access_etds/891

Chicago Manual of Style (16th Edition):

Chapman, Erin Elizabeth. “A Survey and Analysis of Solutions to the Oblivious Memory Access Problem.” 2012. Masters Thesis, Portland State University. Accessed September 19, 2019. https://pdxscholar.library.pdx.edu/open_access_etds/891.

MLA Handbook (7th Edition):

Chapman, Erin Elizabeth. “A Survey and Analysis of Solutions to the Oblivious Memory Access Problem.” 2012. Web. 19 Sep 2019.

Vancouver:

Chapman EE. A Survey and Analysis of Solutions to the Oblivious Memory Access Problem. [Internet] [Masters thesis]. Portland State University; 2012. [cited 2019 Sep 19]. Available from: https://pdxscholar.library.pdx.edu/open_access_etds/891.

Council of Science Editors:

Chapman EE. A Survey and Analysis of Solutions to the Oblivious Memory Access Problem. [Masters Thesis]. Portland State University; 2012. Available from: https://pdxscholar.library.pdx.edu/open_access_etds/891


NSYSU

27. Chen, Min-Chen. Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices.

Degree: PhD, Physics, 2011, NSYSU

 In first part, the supercritical CO2 (SCCO2) fluid technology is employed to improve the device properties of ZnO TFT. The SCCO2 fluid exhibits liquid-like property,… (more)

Subjects/Keywords: Thin-Film Transistors (TFTs); Oxide thin film; Resistive Random Access Memory (RRAM)

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APA (6th Edition):

Chen, M. (2011). Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714111-132055

Chicago Manual of Style (16th Edition):

Chen, Min-Chen. “Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices.” 2011. Doctoral Dissertation, NSYSU. Accessed September 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714111-132055.

MLA Handbook (7th Edition):

Chen, Min-Chen. “Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices.” 2011. Web. 19 Sep 2019.

Vancouver:

Chen M. Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices. [Internet] [Doctoral dissertation]. NSYSU; 2011. [cited 2019 Sep 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714111-132055.

Council of Science Editors:

Chen M. Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices. [Doctoral Dissertation]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714111-132055


NSYSU

28. Liang, Shu-ping. Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2013, NSYSU

 ITO is a transparent conductive film, owning to high transmittance and good electrical conductivity, ITO has been applied in a wide range over touch panel,… (more)

Subjects/Keywords: Transparent conductive film of ITO; SCCO2; Comsol simulation; Resistance Random access memory

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Liang, S. (2013). Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-115818

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liang, Shu-ping. “Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode.” 2013. Thesis, NSYSU. Accessed September 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-115818.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liang, Shu-ping. “Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode.” 2013. Web. 19 Sep 2019.

Vancouver:

Liang S. Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Sep 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-115818.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liang S. Study on Resistance Switching Mechanism in Resistance Random Access Memory with ITO Electrode. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-115818

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

29. Huang, Kuan-Chi. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.

Degree: Master, Physics, 2014, NSYSU

 In order to clarify the mechanism of reset process in Ti/HfO2/TiN resistive random access memory (RRAM) devices, constant voltage sampling measurements are carried out at… (more)

Subjects/Keywords: complementary resistive switches; indium tin oxide; activation energy; hafnium; resistive random access memory

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Huang, K. (2014). Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Thesis, NSYSU. Accessed September 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Web. 19 Sep 2019.

Vancouver:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Sep 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

30. Wang, Huei-Jruan. Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 With the progress of technology, high capacity and scalable are required in the future. Recent years, the physical limit is approached and a next-generation memory(more)

Subjects/Keywords: Spike timing dependent plasticity; Graphene oxide; Resistance random access memory; Biomimicry; Complementary resistance switch

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, H. (2014). Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616114-184706

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Huei-Jruan. “Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure.” 2014. Thesis, NSYSU. Accessed September 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616114-184706.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Huei-Jruan. “Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure.” 2014. Web. 19 Sep 2019.

Vancouver:

Wang H. Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Sep 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616114-184706.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang H. Study on Complementary Resistive Switching Memory Mechanism and Bionic Device Of Graphene Oxide Structure. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616114-184706

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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