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You searched for subject:(Radiation hardening). Showing records 1 – 30 of 54 total matches.

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Arizona State University

1. Hindman, Nathan David. Fully Automated Radiation Hardened by Design Circuit Construction.

Degree: PhD, Electrical Engineering, 2012, Arizona State University

 A fully automated logic design methodology for radiation hardened by design (RHBD) high speed logic using fine grained triple modular redundancy (TMR) is presented. The… (more)

Subjects/Keywords: Electrical engineering; Automated Design; Radiation Hardening

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APA (6th Edition):

Hindman, N. D. (2012). Fully Automated Radiation Hardened by Design Circuit Construction. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/15918

Chicago Manual of Style (16th Edition):

Hindman, Nathan David. “Fully Automated Radiation Hardened by Design Circuit Construction.” 2012. Doctoral Dissertation, Arizona State University. Accessed February 25, 2020. http://repository.asu.edu/items/15918.

MLA Handbook (7th Edition):

Hindman, Nathan David. “Fully Automated Radiation Hardened by Design Circuit Construction.” 2012. Web. 25 Feb 2020.

Vancouver:

Hindman ND. Fully Automated Radiation Hardened by Design Circuit Construction. [Internet] [Doctoral dissertation]. Arizona State University; 2012. [cited 2020 Feb 25]. Available from: http://repository.asu.edu/items/15918.

Council of Science Editors:

Hindman ND. Fully Automated Radiation Hardened by Design Circuit Construction. [Doctoral Dissertation]. Arizona State University; 2012. Available from: http://repository.asu.edu/items/15918


Georgia Tech

2. Dunn, Aaron Yehudah. Radiation damage accumulation and associated mechanical hardening in thin films and bulk materials.

Degree: PhD, Mechanical Engineering, 2016, Georgia Tech

 The overall purpose of this dissertation is to develop a multi-scale framework that can simulate radiation defect accumulation across a broad range of time and… (more)

Subjects/Keywords: Radiation damage; Cluster dynamics; Stochastic cluster dynamics; Radiation hardening; Ion irradiation; Neutron irradiation

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APA (6th Edition):

Dunn, A. Y. (2016). Radiation damage accumulation and associated mechanical hardening in thin films and bulk materials. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54959

Chicago Manual of Style (16th Edition):

Dunn, Aaron Yehudah. “Radiation damage accumulation and associated mechanical hardening in thin films and bulk materials.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 25, 2020. http://hdl.handle.net/1853/54959.

MLA Handbook (7th Edition):

Dunn, Aaron Yehudah. “Radiation damage accumulation and associated mechanical hardening in thin films and bulk materials.” 2016. Web. 25 Feb 2020.

Vancouver:

Dunn AY. Radiation damage accumulation and associated mechanical hardening in thin films and bulk materials. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1853/54959.

Council of Science Editors:

Dunn AY. Radiation damage accumulation and associated mechanical hardening in thin films and bulk materials. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/54959


University of New Mexico

3. Devarapalli, Vallabh Srikanth. Circuit designs for low-power and SEU-hardened systems.

Degree: Electrical and Computer Engineering, 2009, University of New Mexico

 The desire to have smaller and faster portable devices is one of the primary motivations for technology scaling. Though advancements in device physics are moving… (more)

Subjects/Keywords: Low voltage integrated circuits – Design and construction; Radiation hardening.

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APA (6th Edition):

Devarapalli, V. S. (2009). Circuit designs for low-power and SEU-hardened systems. (Masters Thesis). University of New Mexico. Retrieved from http://hdl.handle.net/1928/9359

Chicago Manual of Style (16th Edition):

Devarapalli, Vallabh Srikanth. “Circuit designs for low-power and SEU-hardened systems.” 2009. Masters Thesis, University of New Mexico. Accessed February 25, 2020. http://hdl.handle.net/1928/9359.

MLA Handbook (7th Edition):

Devarapalli, Vallabh Srikanth. “Circuit designs for low-power and SEU-hardened systems.” 2009. Web. 25 Feb 2020.

Vancouver:

Devarapalli VS. Circuit designs for low-power and SEU-hardened systems. [Internet] [Masters thesis]. University of New Mexico; 2009. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1928/9359.

Council of Science Editors:

Devarapalli VS. Circuit designs for low-power and SEU-hardened systems. [Masters Thesis]. University of New Mexico; 2009. Available from: http://hdl.handle.net/1928/9359


Wright State University

4. Pemberton, Thomas B. A Structured ASIC Approach to a Radiation Hardened by Design Digital Single Sideband Modulator for Digital Radio Frequency Memories.

Degree: MSEgr, Electrical Engineering, 2010, Wright State University

  Digital Radio Frequency Memories (DRFM) are widely used as modules in digital signal processing. These modules can provide several forms of signal manipulation and… (more)

Subjects/Keywords: Electrical Engineering; Engineering; Digital Signal Processing; Hilbert Filter; Radiation Hardening

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APA (6th Edition):

Pemberton, T. B. (2010). A Structured ASIC Approach to a Radiation Hardened by Design Digital Single Sideband Modulator for Digital Radio Frequency Memories. (Masters Thesis). Wright State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=wright1277861601

Chicago Manual of Style (16th Edition):

Pemberton, Thomas B. “A Structured ASIC Approach to a Radiation Hardened by Design Digital Single Sideband Modulator for Digital Radio Frequency Memories.” 2010. Masters Thesis, Wright State University. Accessed February 25, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=wright1277861601.

MLA Handbook (7th Edition):

Pemberton, Thomas B. “A Structured ASIC Approach to a Radiation Hardened by Design Digital Single Sideband Modulator for Digital Radio Frequency Memories.” 2010. Web. 25 Feb 2020.

Vancouver:

Pemberton TB. A Structured ASIC Approach to a Radiation Hardened by Design Digital Single Sideband Modulator for Digital Radio Frequency Memories. [Internet] [Masters thesis]. Wright State University; 2010. [cited 2020 Feb 25]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=wright1277861601.

Council of Science Editors:

Pemberton TB. A Structured ASIC Approach to a Radiation Hardened by Design Digital Single Sideband Modulator for Digital Radio Frequency Memories. [Masters Thesis]. Wright State University; 2010. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=wright1277861601


Universidade do Rio Grande do Sul

5. Leite, Franco Ripoll. Estudo e implementação de um microcontrolador tolerante à radiação.

Degree: 2009, Universidade do Rio Grande do Sul

Neste trabalho foi elaborado um microcontrolador 8051 tolerante à radiação, usando para isso técnicas de recomputação de instruções. A base para este trabalho foi a… (more)

Subjects/Keywords: 8051 microcontroller; Microcontroladores; Microprocessadores; Re-computation; Radiação; Radiation hardening; Bulk- BICS

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APA (6th Edition):

Leite, F. R. (2009). Estudo e implementação de um microcontrolador tolerante à radiação. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/18991

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Leite, Franco Ripoll. “Estudo e implementação de um microcontrolador tolerante à radiação.” 2009. Thesis, Universidade do Rio Grande do Sul. Accessed February 25, 2020. http://hdl.handle.net/10183/18991.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Leite, Franco Ripoll. “Estudo e implementação de um microcontrolador tolerante à radiação.” 2009. Web. 25 Feb 2020.

Vancouver:

Leite FR. Estudo e implementação de um microcontrolador tolerante à radiação. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2009. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10183/18991.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Leite FR. Estudo e implementação de um microcontrolador tolerante à radiação. [Thesis]. Universidade do Rio Grande do Sul; 2009. Available from: http://hdl.handle.net/10183/18991

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arkansas

6. Brady, John Davis. Radiation-Hardened Delay-Insensitive Asynchronous Circuits for Multi-Bit SEU Mitigation and Data-Retaining SEL Protection.

Degree: MSCmpE, 2014, University of Arkansas

Radiation can have highly damaging effects on circuitry, especially for space applications, if designed without radiation-hardening mechanisms. Delay-insensitive asynchronous circuits inherently have promising potentials… (more)

Subjects/Keywords: Asynchronous; Radiation Hardening; SEL Protection; SEU Mitigation; Digital Circuits

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APA (6th Edition):

Brady, J. D. (2014). Radiation-Hardened Delay-Insensitive Asynchronous Circuits for Multi-Bit SEU Mitigation and Data-Retaining SEL Protection. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/2299

Chicago Manual of Style (16th Edition):

Brady, John Davis. “Radiation-Hardened Delay-Insensitive Asynchronous Circuits for Multi-Bit SEU Mitigation and Data-Retaining SEL Protection.” 2014. Masters Thesis, University of Arkansas. Accessed February 25, 2020. https://scholarworks.uark.edu/etd/2299.

MLA Handbook (7th Edition):

Brady, John Davis. “Radiation-Hardened Delay-Insensitive Asynchronous Circuits for Multi-Bit SEU Mitigation and Data-Retaining SEL Protection.” 2014. Web. 25 Feb 2020.

Vancouver:

Brady JD. Radiation-Hardened Delay-Insensitive Asynchronous Circuits for Multi-Bit SEU Mitigation and Data-Retaining SEL Protection. [Internet] [Masters thesis]. University of Arkansas; 2014. [cited 2020 Feb 25]. Available from: https://scholarworks.uark.edu/etd/2299.

Council of Science Editors:

Brady JD. Radiation-Hardened Delay-Insensitive Asynchronous Circuits for Multi-Bit SEU Mitigation and Data-Retaining SEL Protection. [Masters Thesis]. University of Arkansas; 2014. Available from: https://scholarworks.uark.edu/etd/2299


Georgia Tech

7. Lourenco, Nelson Estacio. Mitigation of transient radiation effects in advanced silicon-germanium technologies.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The need for flexible, low-cost electronics in extreme environment applications has brought silicon-germanium (SiGe) technologies into the spotlight, but the viable long-term capability of these… (more)

Subjects/Keywords: SiGe; Radiation; Hardening; Silicon-germanium; Single-event effects

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APA (6th Edition):

Lourenco, N. E. (2016). Mitigation of transient radiation effects in advanced silicon-germanium technologies. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58187

Chicago Manual of Style (16th Edition):

Lourenco, Nelson Estacio. “Mitigation of transient radiation effects in advanced silicon-germanium technologies.” 2016. Doctoral Dissertation, Georgia Tech. Accessed February 25, 2020. http://hdl.handle.net/1853/58187.

MLA Handbook (7th Edition):

Lourenco, Nelson Estacio. “Mitigation of transient radiation effects in advanced silicon-germanium technologies.” 2016. Web. 25 Feb 2020.

Vancouver:

Lourenco NE. Mitigation of transient radiation effects in advanced silicon-germanium technologies. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1853/58187.

Council of Science Editors:

Lourenco NE. Mitigation of transient radiation effects in advanced silicon-germanium technologies. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/58187


University of Southern California

8. Haghi, Mahta. Modeling and mitigation of radiation-induced charge sharing effects in advanced electronics.

Degree: PhD, Electrical Engineering, 2012, University of Southern California

 As semiconductor industry continues to scale down to ever smaller feature sizes, radiation-induced soft errors are becoming a major concern for microelectronics reliability. A rising… (more)

Subjects/Keywords: radiation hardening by design; sub-micron CMOS; single event upset; single event transient; charge sharing

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APA (6th Edition):

Haghi, M. (2012). Modeling and mitigation of radiation-induced charge sharing effects in advanced electronics. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/17193/rec/4116

Chicago Manual of Style (16th Edition):

Haghi, Mahta. “Modeling and mitigation of radiation-induced charge sharing effects in advanced electronics.” 2012. Doctoral Dissertation, University of Southern California. Accessed February 25, 2020. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/17193/rec/4116.

MLA Handbook (7th Edition):

Haghi, Mahta. “Modeling and mitigation of radiation-induced charge sharing effects in advanced electronics.” 2012. Web. 25 Feb 2020.

Vancouver:

Haghi M. Modeling and mitigation of radiation-induced charge sharing effects in advanced electronics. [Internet] [Doctoral dissertation]. University of Southern California; 2012. [cited 2020 Feb 25]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/17193/rec/4116.

Council of Science Editors:

Haghi M. Modeling and mitigation of radiation-induced charge sharing effects in advanced electronics. [Doctoral Dissertation]. University of Southern California; 2012. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/17193/rec/4116

9. Wang, Haibin. STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS.

Degree: 2015, University of Saskatchewan

 Microelectronic devices and systems have been extensively utilized in a variety of radiation environments, ranging from the low-earth orbit to the ground level. A high-energy… (more)

Subjects/Keywords: Single event effects; Charge sharing; nano technology; flip-flop; Radiation Hardening By Design

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APA (6th Edition):

Wang, H. (2015). STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS. (Thesis). University of Saskatchewan. Retrieved from http://hdl.handle.net/10388/ETD-2015-08-2101

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Haibin. “STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS.” 2015. Thesis, University of Saskatchewan. Accessed February 25, 2020. http://hdl.handle.net/10388/ETD-2015-08-2101.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Haibin. “STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS.” 2015. Web. 25 Feb 2020.

Vancouver:

Wang H. STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS. [Internet] [Thesis]. University of Saskatchewan; 2015. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10388/ETD-2015-08-2101.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang H. STUDY OF SINGLE-EVENT EFFECTS ON DIGITAL SYSTEMS. [Thesis]. University of Saskatchewan; 2015. Available from: http://hdl.handle.net/10388/ETD-2015-08-2101

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Arizona State University

10. Schlenvogt, Garrett James. Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices.

Degree: MS, Electrical Engineering, 2010, Arizona State University

 Implantable medical device technology is commonly used by doctors for disease management, aiding to improve patient quality of life. However, it is possible for these… (more)

Subjects/Keywords: Electrical Engineering; charge pump; oxide-trapped charge; Radiation Effects; radiation hardening by design; Total Ionizing Dose

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APA (6th Edition):

Schlenvogt, G. J. (2010). Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/8683

Chicago Manual of Style (16th Edition):

Schlenvogt, Garrett James. “Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices.” 2010. Masters Thesis, Arizona State University. Accessed February 25, 2020. http://repository.asu.edu/items/8683.

MLA Handbook (7th Edition):

Schlenvogt, Garrett James. “Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices.” 2010. Web. 25 Feb 2020.

Vancouver:

Schlenvogt GJ. Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices. [Internet] [Masters thesis]. Arizona State University; 2010. [cited 2020 Feb 25]. Available from: http://repository.asu.edu/items/8683.

Council of Science Editors:

Schlenvogt GJ. Total Dose Effects and Hardening-by-Design Methodologies for Implantable Medical Devices. [Masters Thesis]. Arizona State University; 2010. Available from: http://repository.asu.edu/items/8683


University of Cincinnati

11. DICK, ERIC TIMOTHY. A Survey of CT Phantom Considerations for the Study of Blooming Artifacts as Observed in CT Coronary Angiography Studies: A Preliminary Study.

Degree: MS, Medicine : Radiology-Radiological Sciences (Medical Physics), 2008, University of Cincinnati

 The presence of image "blooming" artifacts, in particular with respect to highly calcifiedplaques, has been a major impediment to the implementation of Multi-detectorComputed Tomography (MD-CT)… (more)

Subjects/Keywords: Radiation; Radiology; Scientific Imaging; blooming; computed tomography; artifact; CT; beam hardening; partial volume averaging; cone beam

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APA (6th Edition):

DICK, E. T. (2008). A Survey of CT Phantom Considerations for the Study of Blooming Artifacts as Observed in CT Coronary Angiography Studies: A Preliminary Study. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1205313085

Chicago Manual of Style (16th Edition):

DICK, ERIC TIMOTHY. “A Survey of CT Phantom Considerations for the Study of Blooming Artifacts as Observed in CT Coronary Angiography Studies: A Preliminary Study.” 2008. Masters Thesis, University of Cincinnati. Accessed February 25, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1205313085.

MLA Handbook (7th Edition):

DICK, ERIC TIMOTHY. “A Survey of CT Phantom Considerations for the Study of Blooming Artifacts as Observed in CT Coronary Angiography Studies: A Preliminary Study.” 2008. Web. 25 Feb 2020.

Vancouver:

DICK ET. A Survey of CT Phantom Considerations for the Study of Blooming Artifacts as Observed in CT Coronary Angiography Studies: A Preliminary Study. [Internet] [Masters thesis]. University of Cincinnati; 2008. [cited 2020 Feb 25]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1205313085.

Council of Science Editors:

DICK ET. A Survey of CT Phantom Considerations for the Study of Blooming Artifacts as Observed in CT Coronary Angiography Studies: A Preliminary Study. [Masters Thesis]. University of Cincinnati; 2008. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1205313085


Georgia Tech

12. Krithivasan, Ramkumar. Design of High-Speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications.

Degree: PhD, Electrical and Computer Engineering, 2007, Georgia Tech

 The objective of this work is to investigate the suitability of applying silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) bipolar complementary metal oxide semiconductor (BiCMOS) technology… (more)

Subjects/Keywords: SiGe; HBT; Cryogenic; Amplifiers; Single-event; Radiation hardening

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APA (6th Edition):

Krithivasan, R. (2007). Design of High-Speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/14505

Chicago Manual of Style (16th Edition):

Krithivasan, Ramkumar. “Design of High-Speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications.” 2007. Doctoral Dissertation, Georgia Tech. Accessed February 25, 2020. http://hdl.handle.net/1853/14505.

MLA Handbook (7th Edition):

Krithivasan, Ramkumar. “Design of High-Speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications.” 2007. Web. 25 Feb 2020.

Vancouver:

Krithivasan R. Design of High-Speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2007. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1853/14505.

Council of Science Editors:

Krithivasan R. Design of High-Speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications. [Doctoral Dissertation]. Georgia Tech; 2007. Available from: http://hdl.handle.net/1853/14505


Universidade do Rio Grande do Sul

13. Balen, Tiago Roberto. Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção.

Degree: 2010, Universidade do Rio Grande do Sul

 Este trabalho estuda os efeitos da radiação em dispositivos analógicos programáveis (FPAAs, do inglês, Field Programmable Analog Arrays) e técnicas de proteção que podem ser… (more)

Subjects/Keywords: Single event upset (SEU); Circuitos eletrônicos; Total ionizing dose (TID) Field programmable analog arrays (FPAAs); Efeitos da radiação; Radiation effects; Circuitos analógicos; Radiação : Proteção; Self-checking; Radiation hardening techniques

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APA (6th Edition):

Balen, T. R. (2010). Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/27254

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Balen, Tiago Roberto. “Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção.” 2010. Thesis, Universidade do Rio Grande do Sul. Accessed February 25, 2020. http://hdl.handle.net/10183/27254.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Balen, Tiago Roberto. “Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção.” 2010. Web. 25 Feb 2020.

Vancouver:

Balen TR. Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2010. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/10183/27254.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Balen TR. Efeitos da radiação em dispositivos analógicos programáveis (FPAAs) e técnicas de proteção. [Thesis]. Universidade do Rio Grande do Sul; 2010. Available from: http://hdl.handle.net/10183/27254

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

14. Glorieux, Maximilien. Durcissement par conception (RHBD) et modélisation des évènements singuliers dans les circuits intégrés numériques en technologies Bulk 65 nm et FDSOI 28 nm : Radiation-Hardening-By-Design (RHDB) and modeling of single event effects in digital circuits manufactured in Bulk 65 nm and FDSOI 28 nm.

Degree: Docteur es, Micro et Nanoélectronique, 2014, Aix Marseille Université

La miniaturisation des circuits intégrés numériques tend à augmenter leur sensibilité aux radiations. Ainsi le rayonnement naturel peut induire des événements singuliers et porter atteinte… (more)

Subjects/Keywords: Microélectronique; Effets des radiations; Événement singuliers; Durcissement par conception; Conception de circuit numériques; Modélisation; Bascule robuste aux radiation; Aléa logique; Microelectronic; Radiation effects; Single event effet; Radiation hardening by design; Digital design; Modeling; Radiation hardened latch; Single event upset

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APA (6th Edition):

Glorieux, M. (2014). Durcissement par conception (RHBD) et modélisation des évènements singuliers dans les circuits intégrés numériques en technologies Bulk 65 nm et FDSOI 28 nm : Radiation-Hardening-By-Design (RHDB) and modeling of single event effects in digital circuits manufactured in Bulk 65 nm and FDSOI 28 nm. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2014AIXM4725

Chicago Manual of Style (16th Edition):

Glorieux, Maximilien. “Durcissement par conception (RHBD) et modélisation des évènements singuliers dans les circuits intégrés numériques en technologies Bulk 65 nm et FDSOI 28 nm : Radiation-Hardening-By-Design (RHDB) and modeling of single event effects in digital circuits manufactured in Bulk 65 nm and FDSOI 28 nm.” 2014. Doctoral Dissertation, Aix Marseille Université. Accessed February 25, 2020. http://www.theses.fr/2014AIXM4725.

MLA Handbook (7th Edition):

Glorieux, Maximilien. “Durcissement par conception (RHBD) et modélisation des évènements singuliers dans les circuits intégrés numériques en technologies Bulk 65 nm et FDSOI 28 nm : Radiation-Hardening-By-Design (RHDB) and modeling of single event effects in digital circuits manufactured in Bulk 65 nm and FDSOI 28 nm.” 2014. Web. 25 Feb 2020.

Vancouver:

Glorieux M. Durcissement par conception (RHBD) et modélisation des évènements singuliers dans les circuits intégrés numériques en technologies Bulk 65 nm et FDSOI 28 nm : Radiation-Hardening-By-Design (RHDB) and modeling of single event effects in digital circuits manufactured in Bulk 65 nm and FDSOI 28 nm. [Internet] [Doctoral dissertation]. Aix Marseille Université 2014. [cited 2020 Feb 25]. Available from: http://www.theses.fr/2014AIXM4725.

Council of Science Editors:

Glorieux M. Durcissement par conception (RHBD) et modélisation des évènements singuliers dans les circuits intégrés numériques en technologies Bulk 65 nm et FDSOI 28 nm : Radiation-Hardening-By-Design (RHDB) and modeling of single event effects in digital circuits manufactured in Bulk 65 nm and FDSOI 28 nm. [Doctoral Dissertation]. Aix Marseille Université 2014. Available from: http://www.theses.fr/2014AIXM4725

15. Vibbert, Daniel Scott. An Enhanced Single-Event Charge Cancellation Technique for Sensitive Circuit Nodes.

Degree: MS, Electrical Engineering, 2018, Vanderbilt University

 An enhancement to an existing radiation hardening by design (RHBD) technique is proposed. The technique, Sensitive Node Active Charge Cancellation (SNACC), protects sensitive A/MS circuit… (more)

Subjects/Keywords: single-event hardening; single-event transients; single-event effects; radiation hardening by design

…transients (SET), the radiation effects mitigated by the SNACC hardening technique, will… …radiation effects are induced and how they can be detrimental to electronic systems. Single-event… …particles from radiation are responsible for single-event charge generation in one of two ways… …radiation pulses, and later reexamined in [13] for the case of ionic particles that are… …radiation pulses [12]. It was shown in [14] that the electric field of the… 

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APA (6th Edition):

Vibbert, D. S. (2018). An Enhanced Single-Event Charge Cancellation Technique for Sensitive Circuit Nodes. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-08152018-130817/ ;

Chicago Manual of Style (16th Edition):

Vibbert, Daniel Scott. “An Enhanced Single-Event Charge Cancellation Technique for Sensitive Circuit Nodes.” 2018. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-08152018-130817/ ;.

MLA Handbook (7th Edition):

Vibbert, Daniel Scott. “An Enhanced Single-Event Charge Cancellation Technique for Sensitive Circuit Nodes.” 2018. Web. 25 Feb 2020.

Vancouver:

Vibbert DS. An Enhanced Single-Event Charge Cancellation Technique for Sensitive Circuit Nodes. [Internet] [Masters thesis]. Vanderbilt University; 2018. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-08152018-130817/ ;.

Council of Science Editors:

Vibbert DS. An Enhanced Single-Event Charge Cancellation Technique for Sensitive Circuit Nodes. [Masters Thesis]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-08152018-130817/ ;

16. Ladaci, Ayoub. Rare earth doped optical fibers and amplifiers for space applications : Les fibres optiques dopées aux terres rares et amplificateurs optiques pour applications spatiales.

Degree: Docteur es, Optique, Photonique, Hyperfréquences, 2017, Lyon; Politecnico di Bari. Dipartimento di Ingegneria Elettrica e dell'Informazione (Italia)

Les fibres dopées aux terres rares (REDFs) représentent un composant clef dans la fabrication de sources laser et d’amplificateurs optiques (REDFAs). Leurs hautes performances rendent… (more)

Subjects/Keywords: Fibres optiques dopées aux terres rares; Radiation; Applications spatiales; Optimisation; Simulation; Communications inter-satellites; Durcissement aux radiations; Amplificateurs optiques; Rare earth doped optical fibers; Radiation; Space applications; Optimization; Simulation; Inter-satellites communications; Radiation hardening; Optical amplifiers

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APA (6th Edition):

Ladaci, A. (2017). Rare earth doped optical fibers and amplifiers for space applications : Les fibres optiques dopées aux terres rares et amplificateurs optiques pour applications spatiales. (Doctoral Dissertation). Lyon; Politecnico di Bari. Dipartimento di Ingegneria Elettrica e dell'Informazione (Italia). Retrieved from http://www.theses.fr/2017LYSES027

Chicago Manual of Style (16th Edition):

Ladaci, Ayoub. “Rare earth doped optical fibers and amplifiers for space applications : Les fibres optiques dopées aux terres rares et amplificateurs optiques pour applications spatiales.” 2017. Doctoral Dissertation, Lyon; Politecnico di Bari. Dipartimento di Ingegneria Elettrica e dell'Informazione (Italia). Accessed February 25, 2020. http://www.theses.fr/2017LYSES027.

MLA Handbook (7th Edition):

Ladaci, Ayoub. “Rare earth doped optical fibers and amplifiers for space applications : Les fibres optiques dopées aux terres rares et amplificateurs optiques pour applications spatiales.” 2017. Web. 25 Feb 2020.

Vancouver:

Ladaci A. Rare earth doped optical fibers and amplifiers for space applications : Les fibres optiques dopées aux terres rares et amplificateurs optiques pour applications spatiales. [Internet] [Doctoral dissertation]. Lyon; Politecnico di Bari. Dipartimento di Ingegneria Elettrica e dell'Informazione (Italia); 2017. [cited 2020 Feb 25]. Available from: http://www.theses.fr/2017LYSES027.

Council of Science Editors:

Ladaci A. Rare earth doped optical fibers and amplifiers for space applications : Les fibres optiques dopées aux terres rares et amplificateurs optiques pour applications spatiales. [Doctoral Dissertation]. Lyon; Politecnico di Bari. Dipartimento di Ingegneria Elettrica e dell'Informazione (Italia); 2017. Available from: http://www.theses.fr/2017LYSES027


Delft University of Technology

17. Tan, J. 4T CMOS Active Pixel Sensors under Ionizing Radiation.

Degree: 2013, Delft University of Technology

 This thesis investigates the ionizing radiation effects on 4T pixels and the elementary in-pixel test devices with regard to the electrical performance and the optical… (more)

Subjects/Keywords: 4T Pixel; CMOS Image Sensor; Radiation-Hardening-by-Design; Dark Signal; Degradation Mechanism

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APA (6th Edition):

Tan, J. (2013). 4T CMOS Active Pixel Sensors under Ionizing Radiation. (Doctoral Dissertation). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f ; urn:NBN:nl:ui:24-uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f ; urn:NBN:nl:ui:24-uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f ; http://resolver.tudelft.nl/uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f

Chicago Manual of Style (16th Edition):

Tan, J. “4T CMOS Active Pixel Sensors under Ionizing Radiation.” 2013. Doctoral Dissertation, Delft University of Technology. Accessed February 25, 2020. http://resolver.tudelft.nl/uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f ; urn:NBN:nl:ui:24-uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f ; urn:NBN:nl:ui:24-uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f ; http://resolver.tudelft.nl/uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f.

MLA Handbook (7th Edition):

Tan, J. “4T CMOS Active Pixel Sensors under Ionizing Radiation.” 2013. Web. 25 Feb 2020.

Vancouver:

Tan J. 4T CMOS Active Pixel Sensors under Ionizing Radiation. [Internet] [Doctoral dissertation]. Delft University of Technology; 2013. [cited 2020 Feb 25]. Available from: http://resolver.tudelft.nl/uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f ; urn:NBN:nl:ui:24-uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f ; urn:NBN:nl:ui:24-uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f ; http://resolver.tudelft.nl/uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f.

Council of Science Editors:

Tan J. 4T CMOS Active Pixel Sensors under Ionizing Radiation. [Doctoral Dissertation]. Delft University of Technology; 2013. Available from: http://resolver.tudelft.nl/uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f ; urn:NBN:nl:ui:24-uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f ; urn:NBN:nl:ui:24-uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f ; http://resolver.tudelft.nl/uuid:12cb7563-45db-4824-bcf7-8f5af11ff52f

18. Nsengiyumva, Patrick. INVESTIGATING THE EFFECTS OF SINGLE-EVENT UPSETS IN STATIC AND DYNAMIC REGISTERS.

Degree: MS, 2014, University of New Hampshire

Radiation-induced single-event upsets (SEUs) pose a serious threat to the reliability of registers. The existing SEU analyses for static CMOS registers focus on the circuit-level… (more)

Subjects/Keywords: Critical Charge; Fault-Tolerance; Integrated Circuit Reliability; Radiation-Induced Effects; Selective Node Hardening (SNH); Single-Event Upset (SEU); Nuclear engineering; Computer engineering; Electrical engineering

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APA (6th Edition):

Nsengiyumva, P. (2014). INVESTIGATING THE EFFECTS OF SINGLE-EVENT UPSETS IN STATIC AND DYNAMIC REGISTERS. (Thesis). University of New Hampshire. Retrieved from https://scholars.unh.edu/thesis/984

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Nsengiyumva, Patrick. “INVESTIGATING THE EFFECTS OF SINGLE-EVENT UPSETS IN STATIC AND DYNAMIC REGISTERS.” 2014. Thesis, University of New Hampshire. Accessed February 25, 2020. https://scholars.unh.edu/thesis/984.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Nsengiyumva, Patrick. “INVESTIGATING THE EFFECTS OF SINGLE-EVENT UPSETS IN STATIC AND DYNAMIC REGISTERS.” 2014. Web. 25 Feb 2020.

Vancouver:

Nsengiyumva P. INVESTIGATING THE EFFECTS OF SINGLE-EVENT UPSETS IN STATIC AND DYNAMIC REGISTERS. [Internet] [Thesis]. University of New Hampshire; 2014. [cited 2020 Feb 25]. Available from: https://scholars.unh.edu/thesis/984.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Nsengiyumva P. INVESTIGATING THE EFFECTS OF SINGLE-EVENT UPSETS IN STATIC AND DYNAMIC REGISTERS. [Thesis]. University of New Hampshire; 2014. Available from: https://scholars.unh.edu/thesis/984

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

19. Armstrong, Sarah E. Single-Event Characterization and Mitigation in High-Speed CMOS Communications Devices.

Degree: PhD, Electrical Engineering, 2011, Vanderbilt University

 High-speed communication systems employ a mix of signal types and circuit topologies in order to optimize efficient data propagation. Typical serializer-deserializer (SerDes) circuits include three… (more)

Subjects/Keywords: Communications Devices; Radiation Hardening by Design; Single-Event Effects

…x29; radiation-hardening-by-design (RHBD) of a high-speed communications device. A… …dissipation hardening scheme. The shift of the results to the left indicates an improvement in the… …hardening of the circuit. Events to the right of the vertical line are considered errors… …114 Fig. IX-5: Maximum and average phase displacement results of DCC hardening at normal… …as part of CML hardening… 

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APA (6th Edition):

Armstrong, S. E. (2011). Single-Event Characterization and Mitigation in High-Speed CMOS Communications Devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12092011-021148/ ;

Chicago Manual of Style (16th Edition):

Armstrong, Sarah E. “Single-Event Characterization and Mitigation in High-Speed CMOS Communications Devices.” 2011. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-12092011-021148/ ;.

MLA Handbook (7th Edition):

Armstrong, Sarah E. “Single-Event Characterization and Mitigation in High-Speed CMOS Communications Devices.” 2011. Web. 25 Feb 2020.

Vancouver:

Armstrong SE. Single-Event Characterization and Mitigation in High-Speed CMOS Communications Devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2011. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-12092011-021148/ ;.

Council of Science Editors:

Armstrong SE. Single-Event Characterization and Mitigation in High-Speed CMOS Communications Devices. [Doctoral Dissertation]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-12092011-021148/ ;

20. Ramamurthy, Chandarasekaran. Chip Level Implementation Techniques for Radiation Hardened Microprocessors.

Degree: MS, Electrical Engineering, 2013, Arizona State University

 Microprocessors are the processing heart of any digital system and are central to all the technological advancements of the age including space exploration and monitoring.… (more)

Subjects/Keywords: Electrical engineering; Computer engineering; CAD; Microprocessor; Radiation Hardening

…represented in Fig. 1.5. 1.3. Radiation hardening to mitigate radiation upsets and failures… …Radiation hardening can be incorporated by techniques applied at the device level, the system… …level and the circuit level [Ker1988]. The basic types of radiation hardening… …filtering radiation errors is called temporal hardening [Mav2002] [Wea2004]… …hardening is the delay penalty that must be incurred even in absence of a radiation hit and since… 

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APA (6th Edition):

Ramamurthy, C. (2013). Chip Level Implementation Techniques for Radiation Hardened Microprocessors. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/21018

Chicago Manual of Style (16th Edition):

Ramamurthy, Chandarasekaran. “Chip Level Implementation Techniques for Radiation Hardened Microprocessors.” 2013. Masters Thesis, Arizona State University. Accessed February 25, 2020. http://repository.asu.edu/items/21018.

MLA Handbook (7th Edition):

Ramamurthy, Chandarasekaran. “Chip Level Implementation Techniques for Radiation Hardened Microprocessors.” 2013. Web. 25 Feb 2020.

Vancouver:

Ramamurthy C. Chip Level Implementation Techniques for Radiation Hardened Microprocessors. [Internet] [Masters thesis]. Arizona State University; 2013. [cited 2020 Feb 25]. Available from: http://repository.asu.edu/items/21018.

Council of Science Editors:

Ramamurthy C. Chip Level Implementation Techniques for Radiation Hardened Microprocessors. [Masters Thesis]. Arizona State University; 2013. Available from: http://repository.asu.edu/items/21018


University of South Florida

21. Kakarla, Sujana. Partial Evaluation Based Triple Modular Redundancy For Single Event Upset Mitigation.

Degree: 2005, University of South Florida

 We present a design technique, called partial evaluation triple modular redundancy for hardening combinational circuits against Single Event Upsets (SEU). The input environment is given… (more)

Subjects/Keywords: Radiation; Hardening; Temporal; Redundant gates; Simulator; American Studies; Arts and Humanities

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APA (6th Edition):

Kakarla, S. (2005). Partial Evaluation Based Triple Modular Redundancy For Single Event Upset Mitigation. (Thesis). University of South Florida. Retrieved from https://scholarcommons.usf.edu/etd/714

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kakarla, Sujana. “Partial Evaluation Based Triple Modular Redundancy For Single Event Upset Mitigation.” 2005. Thesis, University of South Florida. Accessed February 25, 2020. https://scholarcommons.usf.edu/etd/714.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kakarla, Sujana. “Partial Evaluation Based Triple Modular Redundancy For Single Event Upset Mitigation.” 2005. Web. 25 Feb 2020.

Vancouver:

Kakarla S. Partial Evaluation Based Triple Modular Redundancy For Single Event Upset Mitigation. [Internet] [Thesis]. University of South Florida; 2005. [cited 2020 Feb 25]. Available from: https://scholarcommons.usf.edu/etd/714.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kakarla S. Partial Evaluation Based Triple Modular Redundancy For Single Event Upset Mitigation. [Thesis]. University of South Florida; 2005. Available from: https://scholarcommons.usf.edu/etd/714

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Michigan

22. Hesterberg, Justin. Processes Responsible for the Mitigation of IASCC Susceptibility Following the Post-Irradiation Annealing of Austenitic Stainless Steels.

Degree: PhD, Materials Science and Engineering, 2019, University of Michigan

 Post-irradiation annealing (PIA) was conducted on a 304L stainless steel irradiated to 5.9 dpa in the Barsebäck-1 boiling water reactor (BWR), to investigate its effect… (more)

Subjects/Keywords: Radiation hardening; Austenitic stainless steel; Post-irradiation annealing; Irradiation-assisted stress corrosion cracking; Localized deformation; Irradiated microstructure; Materials Science and Engineering; Engineering

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APA (6th Edition):

Hesterberg, J. (2019). Processes Responsible for the Mitigation of IASCC Susceptibility Following the Post-Irradiation Annealing of Austenitic Stainless Steels. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/151646

Chicago Manual of Style (16th Edition):

Hesterberg, Justin. “Processes Responsible for the Mitigation of IASCC Susceptibility Following the Post-Irradiation Annealing of Austenitic Stainless Steels.” 2019. Doctoral Dissertation, University of Michigan. Accessed February 25, 2020. http://hdl.handle.net/2027.42/151646.

MLA Handbook (7th Edition):

Hesterberg, Justin. “Processes Responsible for the Mitigation of IASCC Susceptibility Following the Post-Irradiation Annealing of Austenitic Stainless Steels.” 2019. Web. 25 Feb 2020.

Vancouver:

Hesterberg J. Processes Responsible for the Mitigation of IASCC Susceptibility Following the Post-Irradiation Annealing of Austenitic Stainless Steels. [Internet] [Doctoral dissertation]. University of Michigan; 2019. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/2027.42/151646.

Council of Science Editors:

Hesterberg J. Processes Responsible for the Mitigation of IASCC Susceptibility Following the Post-Irradiation Annealing of Austenitic Stainless Steels. [Doctoral Dissertation]. University of Michigan; 2019. Available from: http://hdl.handle.net/2027.42/151646

23. Wei, Xiaomin. Study and improvement of radiation hard monolithic active pixel sensors of charged particle tracking : Etude et amélioration de capteurs monolithiques actifs à pixels résistants aux rayonnements pour reconstruire la trajectoire des particules chargées.

Degree: Docteur es, Instrumentation et microélectronique, 2012, Université de Strasbourg

Les capteurs monolithiques actifs à pixels (Monolithic Active Pixel Sensors, MAPS) sont de bons candidats pour être utilisés dans des expériences en Physique des Hautes… (more)

Subjects/Keywords: Durcissement aux rayonnements; Effets des rayonnements intenses; MAPS (Monolithic Active Pixel Sensors); Expériences en PHE (Physique des Hautes Énergies); SRAM (Static Random Access Memory); High Energy Physics Experiments; Radiation Effects; MAPS (Monolithic Active Pixel Sensors); Radiation Hardening; SRAM (Static Random Access Memory); 539.2; 539.76

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APA (6th Edition):

Wei, X. (2012). Study and improvement of radiation hard monolithic active pixel sensors of charged particle tracking : Etude et amélioration de capteurs monolithiques actifs à pixels résistants aux rayonnements pour reconstruire la trajectoire des particules chargées. (Doctoral Dissertation). Université de Strasbourg. Retrieved from http://www.theses.fr/2012STRAE044

Chicago Manual of Style (16th Edition):

Wei, Xiaomin. “Study and improvement of radiation hard monolithic active pixel sensors of charged particle tracking : Etude et amélioration de capteurs monolithiques actifs à pixels résistants aux rayonnements pour reconstruire la trajectoire des particules chargées.” 2012. Doctoral Dissertation, Université de Strasbourg. Accessed February 25, 2020. http://www.theses.fr/2012STRAE044.

MLA Handbook (7th Edition):

Wei, Xiaomin. “Study and improvement of radiation hard monolithic active pixel sensors of charged particle tracking : Etude et amélioration de capteurs monolithiques actifs à pixels résistants aux rayonnements pour reconstruire la trajectoire des particules chargées.” 2012. Web. 25 Feb 2020.

Vancouver:

Wei X. Study and improvement of radiation hard monolithic active pixel sensors of charged particle tracking : Etude et amélioration de capteurs monolithiques actifs à pixels résistants aux rayonnements pour reconstruire la trajectoire des particules chargées. [Internet] [Doctoral dissertation]. Université de Strasbourg; 2012. [cited 2020 Feb 25]. Available from: http://www.theses.fr/2012STRAE044.

Council of Science Editors:

Wei X. Study and improvement of radiation hard monolithic active pixel sensors of charged particle tracking : Etude et amélioration de capteurs monolithiques actifs à pixels résistants aux rayonnements pour reconstruire la trajectoire des particules chargées. [Doctoral Dissertation]. Université de Strasbourg; 2012. Available from: http://www.theses.fr/2012STRAE044


Vanderbilt University

24. Narasimham, Balaji. On Chip Characterization of Single Event Transient Pulse Widths.

Degree: MS, Electrical Engineering, 2005, Vanderbilt University

 It is now well known to the radiation effects community that single event effects caused by energetic particles, particularly single event transients, will be among… (more)

Subjects/Keywords: transient pulse width; SET; SEU; single event; CMOS; RHBD; Radiation hardening; Integrated circuits  – Effect of radiation on  – Computer simulation

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APA (6th Edition):

Narasimham, B. (2005). On Chip Characterization of Single Event Transient Pulse Widths. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11302005-010732/ ;

Chicago Manual of Style (16th Edition):

Narasimham, Balaji. “On Chip Characterization of Single Event Transient Pulse Widths.” 2005. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11302005-010732/ ;.

MLA Handbook (7th Edition):

Narasimham, Balaji. “On Chip Characterization of Single Event Transient Pulse Widths.” 2005. Web. 25 Feb 2020.

Vancouver:

Narasimham B. On Chip Characterization of Single Event Transient Pulse Widths. [Internet] [Masters thesis]. Vanderbilt University; 2005. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11302005-010732/ ;.

Council of Science Editors:

Narasimham B. On Chip Characterization of Single Event Transient Pulse Widths. [Masters Thesis]. Vanderbilt University; 2005. Available from: http://etd.library.vanderbilt.edu/available/etd-11302005-010732/ ;


Vanderbilt University

25. Amusan, Oluwole Ayodele. Analysis of single event vulnerabilities in a 130 nm CMOS technology.

Degree: MS, Electrical Engineering, 2006, Vanderbilt University

 The amount of charge required to represent a logic state in CMOS digital circuits has been reduced dramatically with the scaling of supply voltage and… (more)

Subjects/Keywords: Metal oxide semiconductors Complementary  – Design and construction; deep submicron; Radiation hardening; Metal oxide semiconductors Complementary  – Effect of radiation on

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APA (6th Edition):

Amusan, O. A. (2006). Analysis of single event vulnerabilities in a 130 nm CMOS technology. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-09012006-114826/ ;

Chicago Manual of Style (16th Edition):

Amusan, Oluwole Ayodele. “Analysis of single event vulnerabilities in a 130 nm CMOS technology.” 2006. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-09012006-114826/ ;.

MLA Handbook (7th Edition):

Amusan, Oluwole Ayodele. “Analysis of single event vulnerabilities in a 130 nm CMOS technology.” 2006. Web. 25 Feb 2020.

Vancouver:

Amusan OA. Analysis of single event vulnerabilities in a 130 nm CMOS technology. [Internet] [Masters thesis]. Vanderbilt University; 2006. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-09012006-114826/ ;.

Council of Science Editors:

Amusan OA. Analysis of single event vulnerabilities in a 130 nm CMOS technology. [Masters Thesis]. Vanderbilt University; 2006. Available from: http://etd.library.vanderbilt.edu/available/etd-09012006-114826/ ;


Vanderbilt University

26. Balasubramanian, Anitha. A Built-In Self-Test (BIST) Technique for Single-Event Transient Testing in Digital Circuits.

Degree: MS, Electrical Engineering, 2008, Vanderbilt University

 With shrinking device feature sizes, integrated circuits are becoming more vulnerable to Single-Event Transients (SETs). Characterizing error rates due to SETs is essential for choosing… (more)

Subjects/Keywords: single-event transient; random number generator; current starved inverters; single-event; Integrated circuits  – Effect of radiation on  – Testing; Radiation hardening

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APA (6th Edition):

Balasubramanian, A. (2008). A Built-In Self-Test (BIST) Technique for Single-Event Transient Testing in Digital Circuits. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07292008-093802/ ;

Chicago Manual of Style (16th Edition):

Balasubramanian, Anitha. “A Built-In Self-Test (BIST) Technique for Single-Event Transient Testing in Digital Circuits.” 2008. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-07292008-093802/ ;.

MLA Handbook (7th Edition):

Balasubramanian, Anitha. “A Built-In Self-Test (BIST) Technique for Single-Event Transient Testing in Digital Circuits.” 2008. Web. 25 Feb 2020.

Vancouver:

Balasubramanian A. A Built-In Self-Test (BIST) Technique for Single-Event Transient Testing in Digital Circuits. [Internet] [Masters thesis]. Vanderbilt University; 2008. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-07292008-093802/ ;.

Council of Science Editors:

Balasubramanian A. A Built-In Self-Test (BIST) Technique for Single-Event Transient Testing in Digital Circuits. [Masters Thesis]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-07292008-093802/ ;


Brno University of Technology

27. Minaříková, Kateřina. Možnosti zvyšování trvanlivosti betonových výrobků technologiemi na bázi vytvrzování jejich povrchu .

Degree: 2017, Brno University of Technology

 V posledních letech se u vibrolisovaných betonových prvků začínáme setkávat s vyššími nároky na jejich kvalitu povrchu. Proto se na trhu začaly objevovat prvky se… (more)

Subjects/Keywords: Vibrolisované betonové výrobky; vibrolisované betonové prvky; vápenné výkvěty; úprava povrchu; povrch betonu; ochranný impregnační nátěr; ultrafialové záření; infračervené záření; vytvrzování povrchu; Vibro-pressed concrete products; vibro-pressed concrete elements; limestone effluents; surface treatment; concrete finish; protective impregnation coating; ultraviolet radiation; infrared radiation; surface hardening

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Minaříková, K. (2017). Možnosti zvyšování trvanlivosti betonových výrobků technologiemi na bázi vytvrzování jejich povrchu . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/68703

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Minaříková, Kateřina. “Možnosti zvyšování trvanlivosti betonových výrobků technologiemi na bázi vytvrzování jejich povrchu .” 2017. Thesis, Brno University of Technology. Accessed February 25, 2020. http://hdl.handle.net/11012/68703.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Minaříková, Kateřina. “Možnosti zvyšování trvanlivosti betonových výrobků technologiemi na bázi vytvrzování jejich povrchu .” 2017. Web. 25 Feb 2020.

Vancouver:

Minaříková K. Možnosti zvyšování trvanlivosti betonových výrobků technologiemi na bázi vytvrzování jejich povrchu . [Internet] [Thesis]. Brno University of Technology; 2017. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/11012/68703.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Minaříková K. Možnosti zvyšování trvanlivosti betonových výrobků technologiemi na bázi vytvrzování jejich povrchu . [Thesis]. Brno University of Technology; 2017. Available from: http://hdl.handle.net/11012/68703

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

28. Walldén, Johan. Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques.

Degree: The Institute of Technology, 2014, Linköping UniversityLinköping University

  The aim with this thesis has been to make a survey of radiation hardened electronics, explaining why and how radiation affects electronics and what… (more)

Subjects/Keywords: Radiation; Radiation Hardening By Design; RHBD; Displacement Damage; DDD; Total Ionizing

…33 4 Radiation Hardening by Design 4.1 35 Device level… …hardening. 1.1.1 Space Radiation levels in space depends on the proximity of extraterrestrial… …Integrated Circuit Radiation Hardening By Design Triple Modular Redundancy Dual Interlocked storage… …3 2 Radiation Induced Damage 5 2.1 Displacement Damage… …14 3 The Effects of Radiation on Different Technologies and Devices 3.1 15 Bulk MOSFET… 

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APA (6th Edition):

Walldén, J. (2014). Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques. (Thesis). Linköping UniversityLinköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Walldén, Johan. “Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques.” 2014. Thesis, Linköping UniversityLinköping University. Accessed February 25, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Walldén, Johan. “Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques.” 2014. Web. 25 Feb 2020.

Vancouver:

Walldén J. Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques. [Internet] [Thesis]. Linköping UniversityLinköping University; 2014. [cited 2020 Feb 25]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Walldén J. Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques. [Thesis]. Linköping UniversityLinköping University; 2014. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

29. Sutton, Akil Khamisi. Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 Hydrocarbon exploration, global navigation satellite systems, computed tomography, and aircraft avionics are just a few examples of applications that require system operation at an ambient… (more)

Subjects/Keywords: Bit error rate testing; Displacement damage; Heterojunction bipolar transistor; Radiation effects; Radiation hardening by design; Silicon germanium; Single event upset; Ionization; Heterojunctions; Bipolar transistors; Logic circuits; Radiation hardening; Hardness; Germanium compounds; Silicon compounds; Extreme environments

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Sutton, A. K. (2009). Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/29778

Chicago Manual of Style (16th Edition):

Sutton, Akil Khamisi. “Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits.” 2009. Doctoral Dissertation, Georgia Tech. Accessed February 25, 2020. http://hdl.handle.net/1853/29778.

MLA Handbook (7th Edition):

Sutton, Akil Khamisi. “Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits.” 2009. Web. 25 Feb 2020.

Vancouver:

Sutton AK. Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2020 Feb 25]. Available from: http://hdl.handle.net/1853/29778.

Council of Science Editors:

Sutton AK. Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/29778

30. Hutson, John. Single Event Latchup in a Deep Submicron CMOS Technology.

Degree: PhD, Electrical Engineering, 2008, Vanderbilt University

 Single event latchup (SEL) has been observed on a range of different devices over the past three decades and can result in large currents on… (more)

Subjects/Keywords: Single Event Latchup; Single Event Effects; Radiation Effects; Metal Oxide Semiconductors Complementary  – Effect of radiation on  – Testing; Radiation hardening  – Testing

radiation hardening a system. Mechanisms for Single-Event Effects The single-event effects that… …1 II. THE SPACE RADIATION ENVIRONMENT AND SINGLE-EVENT EFFECTS… …5 THE SPACE RADIATION ENVIRONMENT… …the study of radiation and its effects on microelectronic devices is the influence of device… …x29;. In the space radiation environment, which includes the Earth’s radiation belts, solar… 

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APA (6th Edition):

Hutson, J. (2008). Single Event Latchup in a Deep Submicron CMOS Technology. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11192008-010832/ ;

Chicago Manual of Style (16th Edition):

Hutson, John. “Single Event Latchup in a Deep Submicron CMOS Technology.” 2008. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11192008-010832/ ;.

MLA Handbook (7th Edition):

Hutson, John. “Single Event Latchup in a Deep Submicron CMOS Technology.” 2008. Web. 25 Feb 2020.

Vancouver:

Hutson J. Single Event Latchup in a Deep Submicron CMOS Technology. [Internet] [Doctoral dissertation]. Vanderbilt University; 2008. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11192008-010832/ ;.

Council of Science Editors:

Hutson J. Single Event Latchup in a Deep Submicron CMOS Technology. [Doctoral Dissertation]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-11192008-010832/ ;

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