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You searched for subject:(RTN). Showing records 1 – 4 of 4 total matches.

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University of Minnesota

1. Delles, James. Non-Equilibrium Two-State Switching in Mesoscale, Ferromagnetic Particles.

Degree: PhD, Physics, 2019, University of Minnesota

 There has been much theoretical study attempting to expand upon the Arrhenius law, f=fo exp(U/kT), which describes the switching rate in thermally activated, two-state systems,… (more)

Subjects/Keywords: Arrhenius; Ferromagnetism; Magnetodynamics; Magnetostatics; Mesoscale; RTN

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APA (6th Edition):

Delles, J. (2019). Non-Equilibrium Two-State Switching in Mesoscale, Ferromagnetic Particles. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/206674

Chicago Manual of Style (16th Edition):

Delles, James. “Non-Equilibrium Two-State Switching in Mesoscale, Ferromagnetic Particles.” 2019. Doctoral Dissertation, University of Minnesota. Accessed October 31, 2020. http://hdl.handle.net/11299/206674.

MLA Handbook (7th Edition):

Delles, James. “Non-Equilibrium Two-State Switching in Mesoscale, Ferromagnetic Particles.” 2019. Web. 31 Oct 2020.

Vancouver:

Delles J. Non-Equilibrium Two-State Switching in Mesoscale, Ferromagnetic Particles. [Internet] [Doctoral dissertation]. University of Minnesota; 2019. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/11299/206674.

Council of Science Editors:

Delles J. Non-Equilibrium Two-State Switching in Mesoscale, Ferromagnetic Particles. [Doctoral Dissertation]. University of Minnesota; 2019. Available from: http://hdl.handle.net/11299/206674


Vanderbilt University

2. Gorchichko, Mariia. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.

Degree: MS, Electrical Engineering, 2019, Vanderbilt University

 Due to the advances in manufacturing and enhanced gate control of the transistor channel, FinFETs are commonly used in highly-scaled ICs. The geometry of the… (more)

Subjects/Keywords: FinFET; silicon-on-insulator (SOI); total ionizing dose (TID); low-frequency noise; random telegraph noise (RTN)

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APA (6th Edition):

Gorchichko, M. (2019). Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gorchichko, Mariia. “Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.” 2019. Thesis, Vanderbilt University. Accessed October 31, 2020. http://hdl.handle.net/1803/14529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gorchichko, Mariia. “Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.” 2019. Web. 31 Oct 2020.

Vancouver:

Gorchichko M. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. [Internet] [Thesis]. Vanderbilt University; 2019. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/1803/14529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gorchichko M. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. [Thesis]. Vanderbilt University; 2019. Available from: http://hdl.handle.net/1803/14529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Waterloo

3. Malcolm, AJ. Multi-level Random Telegraph Noise Analysis Using Machine Learning Techniques.

Degree: 2020, University of Waterloo

RTN is a noise process which occurs in solid-state electrical devices such as MOSFETs and Josephson Junctions. Defects in the crystal structure of these devices… (more)

Subjects/Keywords: random telegraph noise; rtn; machine learning; mosfet; cmos

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Malcolm, A. (2020). Multi-level Random Telegraph Noise Analysis Using Machine Learning Techniques. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/16342

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Malcolm, AJ. “Multi-level Random Telegraph Noise Analysis Using Machine Learning Techniques.” 2020. Thesis, University of Waterloo. Accessed October 31, 2020. http://hdl.handle.net/10012/16342.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Malcolm, AJ. “Multi-level Random Telegraph Noise Analysis Using Machine Learning Techniques.” 2020. Web. 31 Oct 2020.

Vancouver:

Malcolm A. Multi-level Random Telegraph Noise Analysis Using Machine Learning Techniques. [Internet] [Thesis]. University of Waterloo; 2020. [cited 2020 Oct 31]. Available from: http://hdl.handle.net/10012/16342.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Malcolm A. Multi-level Random Telegraph Noise Analysis Using Machine Learning Techniques. [Thesis]. University of Waterloo; 2020. Available from: http://hdl.handle.net/10012/16342

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Tsiara, Artemisia. Electrical characterization & modeling of the trapping phenomena impacting the reliability of nanowire transistors for sub 10nm nodes : Caractérisations électriques et modélisation des phénomènes de piégeages affectant la fiabilité des technologies CMOS avancées (Nanofils) 10nm.

Degree: Docteur es, Nano electronique et nano technologies, 2019, Université Grenoble Alpes (ComUE)

Dans les technologies CMOS avancées, les défauts microscopiques localisées à l'interface Si (Nit) ou dans l'oxyde de grille (Nox) dégradent les performances des transistors CMOS,… (more)

Subjects/Keywords: Nanofils; Bruit; Piégeages; CMOS avancés; Nanowires; Bti; Rtn; Traps; Advanced CMOS; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tsiara, A. (2019). Electrical characterization & modeling of the trapping phenomena impacting the reliability of nanowire transistors for sub 10nm nodes : Caractérisations électriques et modélisation des phénomènes de piégeages affectant la fiabilité des technologies CMOS avancées (Nanofils) 10nm. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2019GREAT010

Chicago Manual of Style (16th Edition):

Tsiara, Artemisia. “Electrical characterization & modeling of the trapping phenomena impacting the reliability of nanowire transistors for sub 10nm nodes : Caractérisations électriques et modélisation des phénomènes de piégeages affectant la fiabilité des technologies CMOS avancées (Nanofils) 10nm.” 2019. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed October 31, 2020. http://www.theses.fr/2019GREAT010.

MLA Handbook (7th Edition):

Tsiara, Artemisia. “Electrical characterization & modeling of the trapping phenomena impacting the reliability of nanowire transistors for sub 10nm nodes : Caractérisations électriques et modélisation des phénomènes de piégeages affectant la fiabilité des technologies CMOS avancées (Nanofils) 10nm.” 2019. Web. 31 Oct 2020.

Vancouver:

Tsiara A. Electrical characterization & modeling of the trapping phenomena impacting the reliability of nanowire transistors for sub 10nm nodes : Caractérisations électriques et modélisation des phénomènes de piégeages affectant la fiabilité des technologies CMOS avancées (Nanofils) 10nm. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2019. [cited 2020 Oct 31]. Available from: http://www.theses.fr/2019GREAT010.

Council of Science Editors:

Tsiara A. Electrical characterization & modeling of the trapping phenomena impacting the reliability of nanowire transistors for sub 10nm nodes : Caractérisations électriques et modélisation des phénomènes de piégeages affectant la fiabilité des technologies CMOS avancées (Nanofils) 10nm. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2019. Available from: http://www.theses.fr/2019GREAT010

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