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You searched for subject:(RRAM). Showing records 1 – 30 of 99 total matches.

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1. Ji, Li, active 21st century. SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography.

Degree: MSin Engineering, Materials Science and Engineering, 2014, University of Texas – Austin

 A highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography.… (more)

Subjects/Keywords: RRAM

…in a bipolar type RRAM. The arrows indicate the voltage sweep directions. Compliance… …5 Figure 4. I-V characteristics in a unipolar type RRAM. The arrows indicate the… …x5D;, OrganicRAM (ORAM)[15-17], Resistive-RAM (RRAM)[16… …emerging memory devices of becoming a viable, manufacturable memory. Among all of them, RRAM… …stands out with a highest OPA score. Overall RRAM assessment is similar to or better than… 

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APA (6th Edition):

Ji, Li, a. 2. c. (2014). SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography. (Masters Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/26200

Chicago Manual of Style (16th Edition):

Ji, Li, active 21st century. “SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography.” 2014. Masters Thesis, University of Texas – Austin. Accessed April 18, 2021. http://hdl.handle.net/2152/26200.

MLA Handbook (7th Edition):

Ji, Li, active 21st century. “SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography.” 2014. Web. 18 Apr 2021.

Vancouver:

Ji, Li a2c. SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography. [Internet] [Masters thesis]. University of Texas – Austin; 2014. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/2152/26200.

Council of Science Editors:

Ji, Li a2c. SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography. [Masters Thesis]. University of Texas – Austin; 2014. Available from: http://hdl.handle.net/2152/26200


University of Texas – Austin

2. -3011-5998. Process integration and logic applications of SiOx based resistive memory.

Degree: PhD, Electrical and Computer Engineering, 2015, University of Texas – Austin

 Flash memory has been the fastest growing non-volatile memory technology, and it has been widely used in many portable electronic products. Due to its charge… (more)

Subjects/Keywords: RRAM; SiOx

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APA (6th Edition):

-3011-5998. (2015). Process integration and logic applications of SiOx based resistive memory. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/33351

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-3011-5998. “Process integration and logic applications of SiOx based resistive memory.” 2015. Doctoral Dissertation, University of Texas – Austin. Accessed April 18, 2021. http://hdl.handle.net/2152/33351.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-3011-5998. “Process integration and logic applications of SiOx based resistive memory.” 2015. Web. 18 Apr 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-3011-5998. Process integration and logic applications of SiOx based resistive memory. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2015. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/2152/33351.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-3011-5998. Process integration and logic applications of SiOx based resistive memory. [Doctoral Dissertation]. University of Texas – Austin; 2015. Available from: http://hdl.handle.net/2152/33351

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Waterloo

3. Ranjan, Shubham. TiO2 and Biomaterials based Memristor Devices and its In-Memory Computing Applications.

Degree: 2020, University of Waterloo

 As information technology is moving toward a big data era, the conventional Von Neumann architecture has shown limitation in performance. This is constrained by the… (more)

Subjects/Keywords: memristor; rram; device variation; high density memory rram device; variation tolerant rram circuit

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APA (6th Edition):

Ranjan, S. (2020). TiO2 and Biomaterials based Memristor Devices and its In-Memory Computing Applications. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/16218

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ranjan, Shubham. “TiO2 and Biomaterials based Memristor Devices and its In-Memory Computing Applications.” 2020. Thesis, University of Waterloo. Accessed April 18, 2021. http://hdl.handle.net/10012/16218.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ranjan, Shubham. “TiO2 and Biomaterials based Memristor Devices and its In-Memory Computing Applications.” 2020. Web. 18 Apr 2021.

Vancouver:

Ranjan S. TiO2 and Biomaterials based Memristor Devices and its In-Memory Computing Applications. [Internet] [Thesis]. University of Waterloo; 2020. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/10012/16218.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ranjan S. TiO2 and Biomaterials based Memristor Devices and its In-Memory Computing Applications. [Thesis]. University of Waterloo; 2020. Available from: http://hdl.handle.net/10012/16218

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Carnegie Mellon University

4. Kwon, Jonghan. Electron Microscopy Based Characterization of Resistive Switches.

Degree: 2016, Carnegie Mellon University

 Random Access Memory (RRAM) has emerged as a leading candidate for nonvolatile memory storage. RRAM devices typically consist of a metal/insulator/metal (MIM) structure and exhibit… (more)

Subjects/Keywords: characterization; electron microscopy; memory; RRAM

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APA (6th Edition):

Kwon, J. (2016). Electron Microscopy Based Characterization of Resistive Switches. (Thesis). Carnegie Mellon University. Retrieved from http://repository.cmu.edu/dissertations/701

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kwon, Jonghan. “Electron Microscopy Based Characterization of Resistive Switches.” 2016. Thesis, Carnegie Mellon University. Accessed April 18, 2021. http://repository.cmu.edu/dissertations/701.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kwon, Jonghan. “Electron Microscopy Based Characterization of Resistive Switches.” 2016. Web. 18 Apr 2021.

Vancouver:

Kwon J. Electron Microscopy Based Characterization of Resistive Switches. [Internet] [Thesis]. Carnegie Mellon University; 2016. [cited 2021 Apr 18]. Available from: http://repository.cmu.edu/dissertations/701.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kwon J. Electron Microscopy Based Characterization of Resistive Switches. [Thesis]. Carnegie Mellon University; 2016. Available from: http://repository.cmu.edu/dissertations/701

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

5. Catanzaro, Matthew. Reconfigurable RRAM-based computing: A Case study for reliability enhancement.

Degree: Computer Engineering, 2012, Rochester Institute of Technology

 Emerging hybrid-CMOS nanoscale devices and architectures offer greater degree of integration and performance capabilities. However, the high power densities, hard error frequency, process variations, and… (more)

Subjects/Keywords: Memristor; Nanotechnology; Reliability; RRAM

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APA (6th Edition):

Catanzaro, M. (2012). Reconfigurable RRAM-based computing: A Case study for reliability enhancement. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/3175

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Catanzaro, Matthew. “Reconfigurable RRAM-based computing: A Case study for reliability enhancement.” 2012. Thesis, Rochester Institute of Technology. Accessed April 18, 2021. https://scholarworks.rit.edu/theses/3175.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Catanzaro, Matthew. “Reconfigurable RRAM-based computing: A Case study for reliability enhancement.” 2012. Web. 18 Apr 2021.

Vancouver:

Catanzaro M. Reconfigurable RRAM-based computing: A Case study for reliability enhancement. [Internet] [Thesis]. Rochester Institute of Technology; 2012. [cited 2021 Apr 18]. Available from: https://scholarworks.rit.edu/theses/3175.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Catanzaro M. Reconfigurable RRAM-based computing: A Case study for reliability enhancement. [Thesis]. Rochester Institute of Technology; 2012. Available from: https://scholarworks.rit.edu/theses/3175

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Tennessee – Knoxville

6. Amer, Sherif. Device Modeling and Circuit Design of Neuromorphic Memory Structures.

Degree: 2019, University of Tennessee – Knoxville

 The downscaling of CMOS technology and the benefits gleaned thereof have made it the cornerstone of the semiconductor industry for many years. As the technology… (more)

Subjects/Keywords: memristor; RRAM; IMT; neuromorphic

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APA (6th Edition):

Amer, S. (2019). Device Modeling and Circuit Design of Neuromorphic Memory Structures. (Doctoral Dissertation). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_graddiss/5698

Chicago Manual of Style (16th Edition):

Amer, Sherif. “Device Modeling and Circuit Design of Neuromorphic Memory Structures.” 2019. Doctoral Dissertation, University of Tennessee – Knoxville. Accessed April 18, 2021. https://trace.tennessee.edu/utk_graddiss/5698.

MLA Handbook (7th Edition):

Amer, Sherif. “Device Modeling and Circuit Design of Neuromorphic Memory Structures.” 2019. Web. 18 Apr 2021.

Vancouver:

Amer S. Device Modeling and Circuit Design of Neuromorphic Memory Structures. [Internet] [Doctoral dissertation]. University of Tennessee – Knoxville; 2019. [cited 2021 Apr 18]. Available from: https://trace.tennessee.edu/utk_graddiss/5698.

Council of Science Editors:

Amer S. Device Modeling and Circuit Design of Neuromorphic Memory Structures. [Doctoral Dissertation]. University of Tennessee – Knoxville; 2019. Available from: https://trace.tennessee.edu/utk_graddiss/5698


Georgia Tech

7. Ellis, Noah. Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory.

Degree: MS, Materials Science and Engineering, 2016, Georgia Tech

 Non-volatile memory (NVM) is a form of computer memory in which the logical value (1 or 0) of a bit is retained when the computer… (more)

Subjects/Keywords: RRAM; Cross-point; Memristor

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APA (6th Edition):

Ellis, N. (2016). Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55038

Chicago Manual of Style (16th Edition):

Ellis, Noah. “Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory.” 2016. Masters Thesis, Georgia Tech. Accessed April 18, 2021. http://hdl.handle.net/1853/55038.

MLA Handbook (7th Edition):

Ellis, Noah. “Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory.” 2016. Web. 18 Apr 2021.

Vancouver:

Ellis N. Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory. [Internet] [Masters thesis]. Georgia Tech; 2016. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/1853/55038.

Council of Science Editors:

Ellis N. Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory. [Masters Thesis]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55038


University of New South Wales

8. Zhang, Lepeng. Fabrication of ceria thin films for high performance resistive random access memory applications.

Degree: Materials Science & Engineering, 2016, University of New South Wales

 Resistive random access memories (RRAMs) have attracted much attention because of their unique advantages, such as simpler structure, faster reading and writing speed, smaller bit… (more)

Subjects/Keywords: Sputtering; RRAM; Cerium Oxide

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APA (6th Edition):

Zhang, L. (2016). Fabrication of ceria thin films for high performance resistive random access memory applications. (Masters Thesis). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/56274 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:40438/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Zhang, Lepeng. “Fabrication of ceria thin films for high performance resistive random access memory applications.” 2016. Masters Thesis, University of New South Wales. Accessed April 18, 2021. http://handle.unsw.edu.au/1959.4/56274 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:40438/SOURCE02?view=true.

MLA Handbook (7th Edition):

Zhang, Lepeng. “Fabrication of ceria thin films for high performance resistive random access memory applications.” 2016. Web. 18 Apr 2021.

Vancouver:

Zhang L. Fabrication of ceria thin films for high performance resistive random access memory applications. [Internet] [Masters thesis]. University of New South Wales; 2016. [cited 2021 Apr 18]. Available from: http://handle.unsw.edu.au/1959.4/56274 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:40438/SOURCE02?view=true.

Council of Science Editors:

Zhang L. Fabrication of ceria thin films for high performance resistive random access memory applications. [Masters Thesis]. University of New South Wales; 2016. Available from: http://handle.unsw.edu.au/1959.4/56274 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:40438/SOURCE02?view=true


University of Waterloo

9. Abdelwahed, Amr. Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems.

Degree: 2018, University of Waterloo

 With the continuous and aggressive technology scaling, the design of memory systems becomes very challenging. The desire to have high-capacity, reliable, and energy efficient memory… (more)

Subjects/Keywords: RRAM; ReRAM; Neuromorphic systems; Machine learning platforms; RRAM soft-errors

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APA (6th Edition):

Abdelwahed, A. (2018). Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/13085

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Abdelwahed, Amr. “Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems.” 2018. Thesis, University of Waterloo. Accessed April 18, 2021. http://hdl.handle.net/10012/13085.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Abdelwahed, Amr. “Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems.” 2018. Web. 18 Apr 2021.

Vancouver:

Abdelwahed A. Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems. [Internet] [Thesis]. University of Waterloo; 2018. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/10012/13085.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Abdelwahed A. Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems. [Thesis]. University of Waterloo; 2018. Available from: http://hdl.handle.net/10012/13085

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. Alayan, Mouhamad. Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs) : Investigation of HfO2 based Resistive Random Access Memory (RRAM) : characterization and modeling of cell reliability and novel access device.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Université Grenoble Alpes (ComUE)

 L'écart de vitesse entre le processeur et la mémoire vive est devenu un point faible pour les performances des systèmes. En raison de ces limitations,… (more)

Subjects/Keywords: 1s1r; Crossbar; Rram; Fiabilité; 1s1r; Crossbar; Rram; Reliability; 620

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APA (6th Edition):

Alayan, M. (2018). Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs) : Investigation of HfO2 based Resistive Random Access Memory (RRAM) : characterization and modeling of cell reliability and novel access device. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2018GREAT032

Chicago Manual of Style (16th Edition):

Alayan, Mouhamad. “Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs) : Investigation of HfO2 based Resistive Random Access Memory (RRAM) : characterization and modeling of cell reliability and novel access device.” 2018. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed April 18, 2021. http://www.theses.fr/2018GREAT032.

MLA Handbook (7th Edition):

Alayan, Mouhamad. “Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs) : Investigation of HfO2 based Resistive Random Access Memory (RRAM) : characterization and modeling of cell reliability and novel access device.” 2018. Web. 18 Apr 2021.

Vancouver:

Alayan M. Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs) : Investigation of HfO2 based Resistive Random Access Memory (RRAM) : characterization and modeling of cell reliability and novel access device. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2018. [cited 2021 Apr 18]. Available from: http://www.theses.fr/2018GREAT032.

Council of Science Editors:

Alayan M. Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs) : Investigation of HfO2 based Resistive Random Access Memory (RRAM) : characterization and modeling of cell reliability and novel access device. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2018. Available from: http://www.theses.fr/2018GREAT032


NSYSU

11. Tseng, Hsueh-chih. Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism.

Degree: PhD, Physics, 2013, NSYSU

 In recent years, the requirement of nonvolatile memory has become more and more importance due to the rapid development of the portable electronic products. To… (more)

Subjects/Keywords: self-compliance RRAM; multi-bit switchable unipolar RRAM; gadolinium oxide; nonvolatile memory; RRAM; resistive random access memory; indium-tin oxide

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APA (6th Edition):

Tseng, H. (2013). Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902113-165337

Chicago Manual of Style (16th Edition):

Tseng, Hsueh-chih. “Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism.” 2013. Doctoral Dissertation, NSYSU. Accessed April 18, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902113-165337.

MLA Handbook (7th Edition):

Tseng, Hsueh-chih. “Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism.” 2013. Web. 18 Apr 2021.

Vancouver:

Tseng H. Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2021 Apr 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902113-165337.

Council of Science Editors:

Tseng H. Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902113-165337


NSYSU

12. Jian, De-xiang. Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 With the advent of technology evolution, the needs of memory become more important. Resistance random access memory (RRAM) is one of the mainstream research topics… (more)

Subjects/Keywords: Endurance; Multi-state; Retention; Doping; Stability; RRAM

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APA (6th Edition):

Jian, D. (2016). Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702116-185111

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jian, De-xiang. “Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device.” 2016. Thesis, NSYSU. Accessed April 18, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702116-185111.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jian, De-xiang. “Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device.” 2016. Web. 18 Apr 2021.

Vancouver:

Jian D. Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device. [Internet] [Thesis]. NSYSU; 2016. [cited 2021 Apr 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702116-185111.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jian D. Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702116-185111

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

13. Syu, Yong-En. Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices.

Degree: PhD, Physics, 2012, NSYSU

 Resistive Random Access Memory (RRAM) is considered as the most promising candidate for the next-generation nonvolatile memories due to their superior properties such as low… (more)

Subjects/Keywords: Resistive Random Access Memory (RRAM); Nonvolatile memory

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APA (6th Edition):

Syu, Y. (2012). Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425

Chicago Manual of Style (16th Edition):

Syu, Yong-En. “Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices.” 2012. Doctoral Dissertation, NSYSU. Accessed April 18, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425.

MLA Handbook (7th Edition):

Syu, Yong-En. “Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices.” 2012. Web. 18 Apr 2021.

Vancouver:

Syu Y. Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices. [Internet] [Doctoral dissertation]. NSYSU; 2012. [cited 2021 Apr 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425.

Council of Science Editors:

Syu Y. Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices. [Doctoral Dissertation]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425


NSYSU

14. Hu, Shih-Jie. Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2015, NSYSU

 In this study, three kinds of resistive switching mechanism: FormingãResetãSet process in Resistance Random Access Memory(RRAM) will be discussion. And measure by Agilent B1530 fast… (more)

Subjects/Keywords: RRAM; Resistance Switching; Thermal Effect; Charge Quantity

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hu, S. (2015). Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710115-103817

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hu, Shih-Jie. “Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory.” 2015. Thesis, NSYSU. Accessed April 18, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710115-103817.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hu, Shih-Jie. “Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory.” 2015. Web. 18 Apr 2021.

Vancouver:

Hu S. Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2015. [cited 2021 Apr 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710115-103817.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hu S. Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710115-103817

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. Ma, Wen. Dynamic Memristors: from Devices to Applications.

Degree: PhD, Electrical Engineering, 2018, University of Michigan

 Memristors have been extensively studied as a promising candidate for next generation non-volatile memory technology. More recently, memristors have also become extremely popular in neuromorphic… (more)

Subjects/Keywords: Memristor; Neuromorphic computing; RRAM; Electrical Engineering; Engineering

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APA (6th Edition):

Ma, W. (2018). Dynamic Memristors: from Devices to Applications. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/144102

Chicago Manual of Style (16th Edition):

Ma, Wen. “Dynamic Memristors: from Devices to Applications.” 2018. Doctoral Dissertation, University of Michigan. Accessed April 18, 2021. http://hdl.handle.net/2027.42/144102.

MLA Handbook (7th Edition):

Ma, Wen. “Dynamic Memristors: from Devices to Applications.” 2018. Web. 18 Apr 2021.

Vancouver:

Ma W. Dynamic Memristors: from Devices to Applications. [Internet] [Doctoral dissertation]. University of Michigan; 2018. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/2027.42/144102.

Council of Science Editors:

Ma W. Dynamic Memristors: from Devices to Applications. [Doctoral Dissertation]. University of Michigan; 2018. Available from: http://hdl.handle.net/2027.42/144102


Université de Sherbrooke

16. Valverde, Lucas. Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory ».

Degree: 2015, Université de Sherbrooke

 Avec le développement des technologies portables, les mémoires de type flash sont de plus en plus utilisées. Les compétences requises pour répondre au marché florissant… (more)

Subjects/Keywords: RRAM; BRS; BEOL; Mémoire; Procédé damascène

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Valverde, L. (2015). Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory ». (Masters Thesis). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/6041

Chicago Manual of Style (16th Edition):

Valverde, Lucas. “Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory ».” 2015. Masters Thesis, Université de Sherbrooke. Accessed April 18, 2021. http://hdl.handle.net/11143/6041.

MLA Handbook (7th Edition):

Valverde, Lucas. “Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory ».” 2015. Web. 18 Apr 2021.

Vancouver:

Valverde L. Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory ». [Internet] [Masters thesis]. Université de Sherbrooke; 2015. [cited 2021 Apr 18]. Available from: http://hdl.handle.net/11143/6041.

Council of Science Editors:

Valverde L. Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory ». [Masters Thesis]. Université de Sherbrooke; 2015. Available from: http://hdl.handle.net/11143/6041


University of Texas – Austin

17. Chen, Ying-Chen. Selector-less resistive random access memory (RRAM) with intrinsic nonlinearity for crossbar array applications.

Degree: PhD, Electrical and Computer Engineering, 2019, University of Texas – Austin

 With increasing demand for high-density memory applications, alternative memory technology has been intensively investigated for replacing conventional charge-based flash memory. Among the emerging memory technology,… (more)

Subjects/Keywords: RRAM; Non-volatile memory; Nonlinearity; Selectorless

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APA (6th Edition):

Chen, Y. (2019). Selector-less resistive random access memory (RRAM) with intrinsic nonlinearity for crossbar array applications. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/5799

Chicago Manual of Style (16th Edition):

Chen, Ying-Chen. “Selector-less resistive random access memory (RRAM) with intrinsic nonlinearity for crossbar array applications.” 2019. Doctoral Dissertation, University of Texas – Austin. Accessed April 18, 2021. http://dx.doi.org/10.26153/tsw/5799.

MLA Handbook (7th Edition):

Chen, Ying-Chen. “Selector-less resistive random access memory (RRAM) with intrinsic nonlinearity for crossbar array applications.” 2019. Web. 18 Apr 2021.

Vancouver:

Chen Y. Selector-less resistive random access memory (RRAM) with intrinsic nonlinearity for crossbar array applications. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2019. [cited 2021 Apr 18]. Available from: http://dx.doi.org/10.26153/tsw/5799.

Council of Science Editors:

Chen Y. Selector-less resistive random access memory (RRAM) with intrinsic nonlinearity for crossbar array applications. [Doctoral Dissertation]. University of Texas – Austin; 2019. Available from: http://dx.doi.org/10.26153/tsw/5799

18. Cabout, Thomas. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications.

Degree: Docteur es, Micro et Nanoélectronique, 2014, Aix Marseille Université

Aujourd'hui, le marché des mémoires non-volatile est dominé par la technologie Flash. Cependant, cette technologie est en passe d'atteindre ses limites de miniaturisation. Ainsi, dans… (more)

Subjects/Keywords: Mémoire; Rram; OxRRAM; Commutation; Résistance; Oxyde; HfO2; Memory; Rram; OxRRAM; Commutation; Resistance; Oxide; HfO2

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Cabout, T. (2014). Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2014AIXM4778

Chicago Manual of Style (16th Edition):

Cabout, Thomas. “Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications.” 2014. Doctoral Dissertation, Aix Marseille Université. Accessed April 18, 2021. http://www.theses.fr/2014AIXM4778.

MLA Handbook (7th Edition):

Cabout, Thomas. “Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications.” 2014. Web. 18 Apr 2021.

Vancouver:

Cabout T. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications. [Internet] [Doctoral dissertation]. Aix Marseille Université 2014. [cited 2021 Apr 18]. Available from: http://www.theses.fr/2014AIXM4778.

Council of Science Editors:

Cabout T. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications. [Doctoral Dissertation]. Aix Marseille Université 2014. Available from: http://www.theses.fr/2014AIXM4778


NSYSU

19. Huang, Jheng-Jie. Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device.

Degree: PhD, Physics, 2013, NSYSU

 With the development of portable electronic products, the requirement of nonvolatile memory is higher than before. In order to increase the capacity of nonvolatile memory… (more)

Subjects/Keywords: gallium oxide; indium-gallium-zinc oxide thin film transistors; BiFeO; recoverable RRAM device; nonvolatile memory; RRAM; resistive random access memory

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Huang, J. (2013). Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157

Chicago Manual of Style (16th Edition):

Huang, Jheng-Jie. “Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device.” 2013. Doctoral Dissertation, NSYSU. Accessed April 18, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157.

MLA Handbook (7th Edition):

Huang, Jheng-Jie. “Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device.” 2013. Web. 18 Apr 2021.

Vancouver:

Huang J. Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2021 Apr 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157.

Council of Science Editors:

Huang J. Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157

20. Garbin, Daniele. Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques : A variability study of PCM and OxRAM technologies for use as synapses in neuromorphic systems.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Université Grenoble Alpes (ComUE)

Le cerveau humain est composé d’un grand nombre de réseaux neuraux interconnectés, dont les neurones et les synapses en sont les briques constitutives. Caractérisé par… (more)

Subjects/Keywords: Neuromorphique; Mémoires resistives; RRAM; PCM; PxRAM; Mémoire à changement de phase; Neuromorphic; Resistive memory; RRAM; OxRAM; Phase-change memory; PCM; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Garbin, D. (2015). Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques : A variability study of PCM and OxRAM technologies for use as synapses in neuromorphic systems. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2015GREAT133

Chicago Manual of Style (16th Edition):

Garbin, Daniele. “Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques : A variability study of PCM and OxRAM technologies for use as synapses in neuromorphic systems.” 2015. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed April 18, 2021. http://www.theses.fr/2015GREAT133.

MLA Handbook (7th Edition):

Garbin, Daniele. “Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques : A variability study of PCM and OxRAM technologies for use as synapses in neuromorphic systems.” 2015. Web. 18 Apr 2021.

Vancouver:

Garbin D. Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques : A variability study of PCM and OxRAM technologies for use as synapses in neuromorphic systems. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2015. [cited 2021 Apr 18]. Available from: http://www.theses.fr/2015GREAT133.

Council of Science Editors:

Garbin D. Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques : A variability study of PCM and OxRAM technologies for use as synapses in neuromorphic systems. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2015. Available from: http://www.theses.fr/2015GREAT133

21. Kazar Mendes, Munique. X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs : Études par spectroscopie photoélectronique par rayons X de la commutation résistive dans les CBRAMs à base de Te.

Degree: Docteur es, Physique, 2018, Université Paris-Saclay (ComUE)

 Les mémoires à pont conducteur (CBRAM) sont une option actuellement étudiée pour la prochaine génération de mémoires non volatiles. Le stockage des données est basé… (more)

Subjects/Keywords: CBRAMs; RRAM; Spectroscopie de photoélectrons; Chimie de l'interface; HAXPES; CBRAM; RRAM; Photoelectron spectroscopy; Interface chemistry; HAXPES

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kazar Mendes, M. (2018). X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs : Études par spectroscopie photoélectronique par rayons X de la commutation résistive dans les CBRAMs à base de Te. (Doctoral Dissertation). Université Paris-Saclay (ComUE). Retrieved from http://www.theses.fr/2018SACLS285

Chicago Manual of Style (16th Edition):

Kazar Mendes, Munique. “X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs : Études par spectroscopie photoélectronique par rayons X de la commutation résistive dans les CBRAMs à base de Te.” 2018. Doctoral Dissertation, Université Paris-Saclay (ComUE). Accessed April 18, 2021. http://www.theses.fr/2018SACLS285.

MLA Handbook (7th Edition):

Kazar Mendes, Munique. “X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs : Études par spectroscopie photoélectronique par rayons X de la commutation résistive dans les CBRAMs à base de Te.” 2018. Web. 18 Apr 2021.

Vancouver:

Kazar Mendes M. X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs : Études par spectroscopie photoélectronique par rayons X de la commutation résistive dans les CBRAMs à base de Te. [Internet] [Doctoral dissertation]. Université Paris-Saclay (ComUE); 2018. [cited 2021 Apr 18]. Available from: http://www.theses.fr/2018SACLS285.

Council of Science Editors:

Kazar Mendes M. X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs : Études par spectroscopie photoélectronique par rayons X de la commutation résistive dans les CBRAMs à base de Te. [Doctoral Dissertation]. Université Paris-Saclay (ComUE); 2018. Available from: http://www.theses.fr/2018SACLS285

22. Onkaraiah, Santhosh. Modélisation et conception de circuits à base de mémoires non-volatiles résistives innovantes : Compact modeling and circuit design of resistive memory devices for innovative applications.

Degree: Docteur es, Micro et Nanoélectronique, 2013, Aix Marseille Université

Les limites rencontrées par les dernières générations de mémoires Flash et DRAM (Dynamic Random Access Memory) nécessitent la recherche de nouvelles variables physiques (autres que… (more)

Subjects/Keywords: OxRRAM; CBRAM; RRAM; Modele compacte; NVFPGA; NVFF; 1T-2R; OxRRAM; CBRAM; RRAM; Compact modeling; NVFPGA; NVFF; 1T-2R; NVSWITCH

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APA (6th Edition):

Onkaraiah, S. (2013). Modélisation et conception de circuits à base de mémoires non-volatiles résistives innovantes : Compact modeling and circuit design of resistive memory devices for innovative applications. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2013AIXM4759

Chicago Manual of Style (16th Edition):

Onkaraiah, Santhosh. “Modélisation et conception de circuits à base de mémoires non-volatiles résistives innovantes : Compact modeling and circuit design of resistive memory devices for innovative applications.” 2013. Doctoral Dissertation, Aix Marseille Université. Accessed April 18, 2021. http://www.theses.fr/2013AIXM4759.

MLA Handbook (7th Edition):

Onkaraiah, Santhosh. “Modélisation et conception de circuits à base de mémoires non-volatiles résistives innovantes : Compact modeling and circuit design of resistive memory devices for innovative applications.” 2013. Web. 18 Apr 2021.

Vancouver:

Onkaraiah S. Modélisation et conception de circuits à base de mémoires non-volatiles résistives innovantes : Compact modeling and circuit design of resistive memory devices for innovative applications. [Internet] [Doctoral dissertation]. Aix Marseille Université 2013. [cited 2021 Apr 18]. Available from: http://www.theses.fr/2013AIXM4759.

Council of Science Editors:

Onkaraiah S. Modélisation et conception de circuits à base de mémoires non-volatiles résistives innovantes : Compact modeling and circuit design of resistive memory devices for innovative applications. [Doctoral Dissertation]. Aix Marseille Université 2013. Available from: http://www.theses.fr/2013AIXM4759


NSYSU

23. Lin, Hong-yang. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.

Degree: Master, Materials and Optoelectronic Science, 2013, NSYSU

 Resistive Random Access Memory (RRAM) is considered as one of the most promising candidate for the next-generation memories due to their excellent properties such as… (more)

Subjects/Keywords: Hafnium Oxide; RRAM; Concentration of Oxygen; Nernst Equation; Energy Dissipation Rate

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, H. (2013). Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Hong-yang. “Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.” 2013. Thesis, NSYSU. Accessed April 18, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Hong-yang. “Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.” 2013. Web. 18 Apr 2021.

Vancouver:

Lin H. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. [Internet] [Thesis]. NSYSU; 2013. [cited 2021 Apr 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin H. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Chen, Yi-jiun. Characterization of Amorphous Carbon Resistive Random Access Memory.

Degree: PhD, Mechanical and Electro-Mechanical Engineering, 2014, NSYSU

 The increasing demand for flash memory densities by scaling dimension is a formidable challenge due to physical limitations. Recently, carbon-based resistive random access memory (RRAM)… (more)

Subjects/Keywords: sp2; conjugated double bond; DLC; sp3; amorphous carbon; resistance switching; RRAM

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APA (6th Edition):

Chen, Y. (2014). Characterization of Amorphous Carbon Resistive Random Access Memory. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624114-154719

Chicago Manual of Style (16th Edition):

Chen, Yi-jiun. “Characterization of Amorphous Carbon Resistive Random Access Memory.” 2014. Doctoral Dissertation, NSYSU. Accessed April 18, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624114-154719.

MLA Handbook (7th Edition):

Chen, Yi-jiun. “Characterization of Amorphous Carbon Resistive Random Access Memory.” 2014. Web. 18 Apr 2021.

Vancouver:

Chen Y. Characterization of Amorphous Carbon Resistive Random Access Memory. [Internet] [Doctoral dissertation]. NSYSU; 2014. [cited 2021 Apr 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624114-154719.

Council of Science Editors:

Chen Y. Characterization of Amorphous Carbon Resistive Random Access Memory. [Doctoral Dissertation]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624114-154719


NSYSU

25. Chang, Kuan-Chang. Study on Supercritical Fluids and Resistance Random Access Memory.

Degree: PhD, Materials and Optoelectronic Science, 2014, NSYSU

 In this dissertation, we first provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. To investigate… (more)

Subjects/Keywords: Silicon oxide; Metal doping; Supercritical CO2 fluids; Graphene oxide; RRAM

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APA (6th Edition):

Chang, K. (2014). Study on Supercritical Fluids and Resistance Random Access Memory. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902114-033450

Chicago Manual of Style (16th Edition):

Chang, Kuan-Chang. “Study on Supercritical Fluids and Resistance Random Access Memory.” 2014. Doctoral Dissertation, NSYSU. Accessed April 18, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902114-033450.

MLA Handbook (7th Edition):

Chang, Kuan-Chang. “Study on Supercritical Fluids and Resistance Random Access Memory.” 2014. Web. 18 Apr 2021.

Vancouver:

Chang K. Study on Supercritical Fluids and Resistance Random Access Memory. [Internet] [Doctoral dissertation]. NSYSU; 2014. [cited 2021 Apr 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902114-033450.

Council of Science Editors:

Chang K. Study on Supercritical Fluids and Resistance Random Access Memory. [Doctoral Dissertation]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902114-033450


NSYSU

26. Wang, Zhi-yang. Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 The information stored in human brain is different from computer, it storages and transmits messages through analog signal instead of digital signal. In this study,… (more)

Subjects/Keywords: RRAM; CRS; synaptic plasticity; STDP; STM; LTM; analog storage; lithium silicate

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APA (6th Edition):

Wang, Z. (2014). Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-133231

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Zhi-yang. “Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems.” 2014. Thesis, NSYSU. Accessed April 18, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-133231.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Zhi-yang. “Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems.” 2014. Web. 18 Apr 2021.

Vancouver:

Wang Z. Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems. [Internet] [Thesis]. NSYSU; 2014. [cited 2021 Apr 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-133231.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang Z. Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-133231

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

27. Huang, Jian-bing. The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application.

Degree: Master, Materials and Optoelectronic Science, 2012, NSYSU

 The operating characteristics of non-volatile memory for modern requirement are high-density , low power consumption, fast read and write speed, and good reliability. The floating… (more)

Subjects/Keywords: stability; non-volatile memory; Si-Ge-O; nitrogen doping; RRAM

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Huang, J. (2012). The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-092948

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Jian-bing. “The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application.” 2012. Thesis, NSYSU. Accessed April 18, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-092948.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Jian-bing. “The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application.” 2012. Web. 18 Apr 2021.

Vancouver:

Huang J. The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application. [Internet] [Thesis]. NSYSU; 2012. [cited 2021 Apr 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-092948.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang J. The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-092948

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

28. Tung, Cheng-Wei. Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory.

Degree: Master, Materials and Optoelectronic Science, 2011, NSYSU

 In this thesis, the resistance switching characteristic of Zn:SiO2 -based memory was studied. The resistive memory was fabricated by sputtering to deposit the Metal/Insulator/Metal (MIM)… (more)

Subjects/Keywords: memory; SiO2; RRAM; hopping conduction; FTIR; XPS; Zinc

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tung, C. (2011). Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-131830

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tung, Cheng-Wei. “Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory.” 2011. Thesis, NSYSU. Accessed April 18, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-131830.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tung, Cheng-Wei. “Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory.” 2011. Web. 18 Apr 2021.

Vancouver:

Tung C. Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory. [Internet] [Thesis]. NSYSU; 2011. [cited 2021 Apr 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-131830.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tung C. Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-131830

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

29. Liao, Kuo-Hsiao. The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2011, NSYSU

 In this study, The bottom electrodeï¼TiNï¼, middle insulator ï¼Snï¼SiO2ï¼, and top electrode ï¼Ptï¼ were deposited respectively by sputtering technique for fabricating the resistive random access… (more)

Subjects/Keywords: RTA; Schottky emission; Sn; RRAM; SiO2; SCCO2; Filament

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Liao, K. (2011). The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826111-031558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liao, Kuo-Hsiao. “The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory.” 2011. Thesis, NSYSU. Accessed April 18, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826111-031558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liao, Kuo-Hsiao. “The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory.” 2011. Web. 18 Apr 2021.

Vancouver:

Liao K. The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2011. [cited 2021 Apr 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826111-031558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liao K. The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826111-031558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Carnegie Mellon University

30. Jackson, Thomas C. Building Efficient Neuromorphic Networks in Hardware with Mixed Signal Techniques and Emerging Technologies.

Degree: 2017, Carnegie Mellon University

 In recent years, neuromorphic architectures have been an increasingly effective tool used to solve big data problems. Hardware neural networks have not been able to… (more)

Subjects/Keywords: Mixed Signal; Neurmorphic Computing; Oscillatory Neural Networks; Phase Locked Loops; RRAM

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jackson, T. C. (2017). Building Efficient Neuromorphic Networks in Hardware with Mixed Signal Techniques and Emerging Technologies. (Thesis). Carnegie Mellon University. Retrieved from http://repository.cmu.edu/dissertations/1096

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jackson, Thomas C. “Building Efficient Neuromorphic Networks in Hardware with Mixed Signal Techniques and Emerging Technologies.” 2017. Thesis, Carnegie Mellon University. Accessed April 18, 2021. http://repository.cmu.edu/dissertations/1096.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jackson, Thomas C. “Building Efficient Neuromorphic Networks in Hardware with Mixed Signal Techniques and Emerging Technologies.” 2017. Web. 18 Apr 2021.

Vancouver:

Jackson TC. Building Efficient Neuromorphic Networks in Hardware with Mixed Signal Techniques and Emerging Technologies. [Internet] [Thesis]. Carnegie Mellon University; 2017. [cited 2021 Apr 18]. Available from: http://repository.cmu.edu/dissertations/1096.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jackson TC. Building Efficient Neuromorphic Networks in Hardware with Mixed Signal Techniques and Emerging Technologies. [Thesis]. Carnegie Mellon University; 2017. Available from: http://repository.cmu.edu/dissertations/1096

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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