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You searched for subject:(RRAM). Showing records 1 – 30 of 82 total matches.

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University of Texas – Austin

1. -3011-5998. Process integration and logic applications of SiOx based resistive memory.

Degree: Electrical and Computer Engineering, 2015, University of Texas – Austin

 Flash memory has been the fastest growing non-volatile memory technology, and it has been widely used in many portable electronic products. Due to its charge… (more)

Subjects/Keywords: RRAM; SiOx

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APA (6th Edition):

-3011-5998. (2015). Process integration and logic applications of SiOx based resistive memory. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/33351

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

-3011-5998. “Process integration and logic applications of SiOx based resistive memory.” 2015. Thesis, University of Texas – Austin. Accessed April 25, 2019. http://hdl.handle.net/2152/33351.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

-3011-5998. “Process integration and logic applications of SiOx based resistive memory.” 2015. Web. 25 Apr 2019.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-3011-5998. Process integration and logic applications of SiOx based resistive memory. [Internet] [Thesis]. University of Texas – Austin; 2015. [cited 2019 Apr 25]. Available from: http://hdl.handle.net/2152/33351.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

-3011-5998. Process integration and logic applications of SiOx based resistive memory. [Thesis]. University of Texas – Austin; 2015. Available from: http://hdl.handle.net/2152/33351

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

2. Ji, Li, active 21st century. SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography.

Degree: Materials Science and Engineering, 2014, University of Texas – Austin

 A highly compact, one diode-one resistor (1D-1R) SiOx-based resistive switching memory device with nano-pillar architecture has been achieved for the first time using nano-sphere lithography.… (more)

Subjects/Keywords: RRAM

…in a bipolar type RRAM. The arrows indicate the voltage sweep directions. Compliance… …5 Figure 4. I-V characteristics in a unipolar type RRAM. The arrows indicate the… …x5D;, OrganicRAM (ORAM)[15-17], Resistive-RAM (RRAM)[16… …emerging memory devices of becoming a viable, manufacturable memory. Among all of them, RRAM… …stands out with a highest OPA score. Overall RRAM assessment is similar to or better than… 

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APA (6th Edition):

Ji, Li, a. 2. c. (2014). SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/26200

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ji, Li, active 21st century. “SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography.” 2014. Thesis, University of Texas – Austin. Accessed April 25, 2019. http://hdl.handle.net/2152/26200.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ji, Li, active 21st century. “SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography.” 2014. Web. 25 Apr 2019.

Vancouver:

Ji, Li a2c. SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography. [Internet] [Thesis]. University of Texas – Austin; 2014. [cited 2019 Apr 25]. Available from: http://hdl.handle.net/2152/26200.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ji, Li a2c. SiOx-based resistive switching memory integrated in nanopillar structure fabricated by nanosphere lithography. [Thesis]. University of Texas – Austin; 2014. Available from: http://hdl.handle.net/2152/26200

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

3. Ellis, Noah. Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory.

Degree: MS, Materials Science and Engineering, 2016, Georgia Tech

 Non-volatile memory (NVM) is a form of computer memory in which the logical value (1 or 0) of a bit is retained when the computer… (more)

Subjects/Keywords: RRAM; Cross-point; Memristor

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APA (6th Edition):

Ellis, N. (2016). Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55038

Chicago Manual of Style (16th Edition):

Ellis, Noah. “Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory.” 2016. Masters Thesis, Georgia Tech. Accessed April 25, 2019. http://hdl.handle.net/1853/55038.

MLA Handbook (7th Edition):

Ellis, Noah. “Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory.” 2016. Web. 25 Apr 2019.

Vancouver:

Ellis N. Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory. [Internet] [Masters thesis]. Georgia Tech; 2016. [cited 2019 Apr 25]. Available from: http://hdl.handle.net/1853/55038.

Council of Science Editors:

Ellis N. Design, fabrication, and characterization of nano-scale cross-point hafnium oxide-based resistive random access memory. [Masters Thesis]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55038


Carnegie Mellon University

4. Kwon, Jonghan. Electron Microscopy Based Characterization of Resistive Switches.

Degree: 2016, Carnegie Mellon University

 Random Access Memory (RRAM) has emerged as a leading candidate for nonvolatile memory storage. RRAM devices typically consist of a metal/insulator/metal (MIM) structure and exhibit… (more)

Subjects/Keywords: characterization; electron microscopy; memory; RRAM

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APA (6th Edition):

Kwon, J. (2016). Electron Microscopy Based Characterization of Resistive Switches. (Thesis). Carnegie Mellon University. Retrieved from http://repository.cmu.edu/dissertations/701

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kwon, Jonghan. “Electron Microscopy Based Characterization of Resistive Switches.” 2016. Thesis, Carnegie Mellon University. Accessed April 25, 2019. http://repository.cmu.edu/dissertations/701.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kwon, Jonghan. “Electron Microscopy Based Characterization of Resistive Switches.” 2016. Web. 25 Apr 2019.

Vancouver:

Kwon J. Electron Microscopy Based Characterization of Resistive Switches. [Internet] [Thesis]. Carnegie Mellon University; 2016. [cited 2019 Apr 25]. Available from: http://repository.cmu.edu/dissertations/701.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kwon J. Electron Microscopy Based Characterization of Resistive Switches. [Thesis]. Carnegie Mellon University; 2016. Available from: http://repository.cmu.edu/dissertations/701

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Houston

5. Mithun Kumar, Ramasahayam. Enhancement of EPIR Switching Characteristics of PCMO RRAM Using Oxygen Deficient Al2Ox Diffusion Barrier.

Degree: Electrical and Computer Engineering, Department of, 2014, University of Houston

 Resistive random access memory has gained lots of interest in the last decade as a promising replacement for non-volatile memory. Device retention stability and electric… (more)

Subjects/Keywords: RRAM; PCMO; EPIR SWITCHING

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APA (6th Edition):

Mithun Kumar, R. (2014). Enhancement of EPIR Switching Characteristics of PCMO RRAM Using Oxygen Deficient Al2Ox Diffusion Barrier. (Thesis). University of Houston. Retrieved from http://hdl.handle.net/10657/1555

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mithun Kumar, Ramasahayam. “Enhancement of EPIR Switching Characteristics of PCMO RRAM Using Oxygen Deficient Al2Ox Diffusion Barrier.” 2014. Thesis, University of Houston. Accessed April 25, 2019. http://hdl.handle.net/10657/1555.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mithun Kumar, Ramasahayam. “Enhancement of EPIR Switching Characteristics of PCMO RRAM Using Oxygen Deficient Al2Ox Diffusion Barrier.” 2014. Web. 25 Apr 2019.

Vancouver:

Mithun Kumar R. Enhancement of EPIR Switching Characteristics of PCMO RRAM Using Oxygen Deficient Al2Ox Diffusion Barrier. [Internet] [Thesis]. University of Houston; 2014. [cited 2019 Apr 25]. Available from: http://hdl.handle.net/10657/1555.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mithun Kumar R. Enhancement of EPIR Switching Characteristics of PCMO RRAM Using Oxygen Deficient Al2Ox Diffusion Barrier. [Thesis]. University of Houston; 2014. Available from: http://hdl.handle.net/10657/1555

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New South Wales

6. Zhang, Lepeng. Fabrication of ceria thin films for high performance resistive random access memory applications.

Degree: Materials Science & Engineering, 2016, University of New South Wales

 Resistive random access memories (RRAMs) have attracted much attention because of their unique advantages, such as simpler structure, faster reading and writing speed, smaller bit… (more)

Subjects/Keywords: Sputtering; RRAM; Cerium Oxide

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APA (6th Edition):

Zhang, L. (2016). Fabrication of ceria thin films for high performance resistive random access memory applications. (Masters Thesis). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/56274 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:40438/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Zhang, Lepeng. “Fabrication of ceria thin films for high performance resistive random access memory applications.” 2016. Masters Thesis, University of New South Wales. Accessed April 25, 2019. http://handle.unsw.edu.au/1959.4/56274 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:40438/SOURCE02?view=true.

MLA Handbook (7th Edition):

Zhang, Lepeng. “Fabrication of ceria thin films for high performance resistive random access memory applications.” 2016. Web. 25 Apr 2019.

Vancouver:

Zhang L. Fabrication of ceria thin films for high performance resistive random access memory applications. [Internet] [Masters thesis]. University of New South Wales; 2016. [cited 2019 Apr 25]. Available from: http://handle.unsw.edu.au/1959.4/56274 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:40438/SOURCE02?view=true.

Council of Science Editors:

Zhang L. Fabrication of ceria thin films for high performance resistive random access memory applications. [Masters Thesis]. University of New South Wales; 2016. Available from: http://handle.unsw.edu.au/1959.4/56274 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:40438/SOURCE02?view=true


San Jose State University

7. Xia, Da. Study of the Switching Mechanisms of Resistance Change Memories.

Degree: MS, Electrical Engineering, 2010, San Jose State University

  Resistance change memories (RRAMs) have recently attracting much attention. The switching behaviors and mechanisms of RRAMs are still under investigation, many questions are still… (more)

Subjects/Keywords: memristor; memristor-capacitor; RRAM; VerilogA

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APA (6th Edition):

Xia, D. (2010). Study of the Switching Mechanisms of Resistance Change Memories. (Masters Thesis). San Jose State University. Retrieved from https://scholarworks.sjsu.edu/etd_theses/3899

Chicago Manual of Style (16th Edition):

Xia, Da. “Study of the Switching Mechanisms of Resistance Change Memories.” 2010. Masters Thesis, San Jose State University. Accessed April 25, 2019. https://scholarworks.sjsu.edu/etd_theses/3899.

MLA Handbook (7th Edition):

Xia, Da. “Study of the Switching Mechanisms of Resistance Change Memories.” 2010. Web. 25 Apr 2019.

Vancouver:

Xia D. Study of the Switching Mechanisms of Resistance Change Memories. [Internet] [Masters thesis]. San Jose State University; 2010. [cited 2019 Apr 25]. Available from: https://scholarworks.sjsu.edu/etd_theses/3899.

Council of Science Editors:

Xia D. Study of the Switching Mechanisms of Resistance Change Memories. [Masters Thesis]. San Jose State University; 2010. Available from: https://scholarworks.sjsu.edu/etd_theses/3899


Rochester Institute of Technology

8. Catanzaro, Matthew. Reconfigurable RRAM-based computing: A Case study for reliability enhancement.

Degree: Computer Engineering, 2012, Rochester Institute of Technology

 Emerging hybrid-CMOS nanoscale devices and architectures offer greater degree of integration and performance capabilities. However, the high power densities, hard error frequency, process variations, and… (more)

Subjects/Keywords: Memristor; Nanotechnology; Reliability; RRAM

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APA (6th Edition):

Catanzaro, M. (2012). Reconfigurable RRAM-based computing: A Case study for reliability enhancement. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/3175

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Catanzaro, Matthew. “Reconfigurable RRAM-based computing: A Case study for reliability enhancement.” 2012. Thesis, Rochester Institute of Technology. Accessed April 25, 2019. https://scholarworks.rit.edu/theses/3175.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Catanzaro, Matthew. “Reconfigurable RRAM-based computing: A Case study for reliability enhancement.” 2012. Web. 25 Apr 2019.

Vancouver:

Catanzaro M. Reconfigurable RRAM-based computing: A Case study for reliability enhancement. [Internet] [Thesis]. Rochester Institute of Technology; 2012. [cited 2019 Apr 25]. Available from: https://scholarworks.rit.edu/theses/3175.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Catanzaro M. Reconfigurable RRAM-based computing: A Case study for reliability enhancement. [Thesis]. Rochester Institute of Technology; 2012. Available from: https://scholarworks.rit.edu/theses/3175

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

9. Alayan, Mouhamad. Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs) : Investigation of HfO2 based Resistive Random Access Memory (RRAM) : characterization and modeling of cell reliability and novel access device.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Grenoble Alpes

 L'écart de vitesse entre le processeur et la mémoire vive est devenu un point faible pour les performances des systèmes. En raison de ces limitations,… (more)

Subjects/Keywords: 1s1r; Crossbar; Rram; Fiabilité; 1s1r; Crossbar; Rram; Reliability; 620

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APA (6th Edition):

Alayan, M. (2018). Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs) : Investigation of HfO2 based Resistive Random Access Memory (RRAM) : characterization and modeling of cell reliability and novel access device. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAT032

Chicago Manual of Style (16th Edition):

Alayan, Mouhamad. “Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs) : Investigation of HfO2 based Resistive Random Access Memory (RRAM) : characterization and modeling of cell reliability and novel access device.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed April 25, 2019. http://www.theses.fr/2018GREAT032.

MLA Handbook (7th Edition):

Alayan, Mouhamad. “Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs) : Investigation of HfO2 based Resistive Random Access Memory (RRAM) : characterization and modeling of cell reliability and novel access device.” 2018. Web. 25 Apr 2019.

Vancouver:

Alayan M. Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs) : Investigation of HfO2 based Resistive Random Access Memory (RRAM) : characterization and modeling of cell reliability and novel access device. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2019 Apr 25]. Available from: http://www.theses.fr/2018GREAT032.

Council of Science Editors:

Alayan M. Étude des mémoires résistives (RRAM) à base d’HfO2 : caractérisation et modélisation de la fiabilité des cellules mémoire et des nouveaux dispositifs d'accès (Sélecteurs) : Investigation of HfO2 based Resistive Random Access Memory (RRAM) : characterization and modeling of cell reliability and novel access device. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAT032


University of Waterloo

10. Abdelwahed, Amr. Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems.

Degree: 2018, University of Waterloo

 With the continuous and aggressive technology scaling, the design of memory systems becomes very challenging. The desire to have high-capacity, reliable, and energy efficient memory… (more)

Subjects/Keywords: RRAM; ReRAM; Neuromorphic systems; Machine learning platforms; RRAM soft-errors

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APA (6th Edition):

Abdelwahed, A. (2018). Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/13085

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Abdelwahed, Amr. “Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems.” 2018. Thesis, University of Waterloo. Accessed April 25, 2019. http://hdl.handle.net/10012/13085.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Abdelwahed, Amr. “Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems.” 2018. Web. 25 Apr 2019.

Vancouver:

Abdelwahed A. Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems. [Internet] [Thesis]. University of Waterloo; 2018. [cited 2019 Apr 25]. Available from: http://hdl.handle.net/10012/13085.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Abdelwahed A. Addressing the RRAM Reliability and Radiation Soft-Errors in the Memory Systems. [Thesis]. University of Waterloo; 2018. Available from: http://hdl.handle.net/10012/13085

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

11. Tseng, Hsueh-chih. Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism.

Degree: PhD, Physics, 2013, NSYSU

 In recent years, the requirement of nonvolatile memory has become more and more importance due to the rapid development of the portable electronic products. To… (more)

Subjects/Keywords: self-compliance RRAM; multi-bit switchable unipolar RRAM; gadolinium oxide; nonvolatile memory; RRAM; resistive random access memory; indium-tin oxide

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APA (6th Edition):

Tseng, H. (2013). Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902113-165337

Chicago Manual of Style (16th Edition):

Tseng, Hsueh-chih. “Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism.” 2013. Doctoral Dissertation, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902113-165337.

MLA Handbook (7th Edition):

Tseng, Hsueh-chih. “Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism.” 2013. Web. 25 Apr 2019.

Vancouver:

Tseng H. Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902113-165337.

Council of Science Editors:

Tseng H. Fabrication of rare-earth metal nonvolatile random access memory and investigation of resistance switching mechanism. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902113-165337


NSYSU

12. Jian, De-xiang. Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 With the advent of technology evolution, the needs of memory become more important. Resistance random access memory (RRAM) is one of the mainstream research topics… (more)

Subjects/Keywords: Endurance; Multi-state; Retention; Doping; Stability; RRAM

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APA (6th Edition):

Jian, D. (2016). Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702116-185111

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jian, De-xiang. “Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device.” 2016. Thesis, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702116-185111.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jian, De-xiang. “Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device.” 2016. Web. 25 Apr 2019.

Vancouver:

Jian D. Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702116-185111.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jian D. Study on Conduction and Stability Mechanism in Carbon and Lithium-doped Multi-states RRAM Device. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0702116-185111

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

13. Syu, Yong-En. Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices.

Degree: PhD, Physics, 2012, NSYSU

 Resistive Random Access Memory (RRAM) is considered as the most promising candidate for the next-generation nonvolatile memories due to their superior properties such as low… (more)

Subjects/Keywords: Resistive Random Access Memory (RRAM); Nonvolatile memory

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APA (6th Edition):

Syu, Y. (2012). Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425

Chicago Manual of Style (16th Edition):

Syu, Yong-En. “Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices.” 2012. Doctoral Dissertation, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425.

MLA Handbook (7th Edition):

Syu, Yong-En. “Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices.” 2012. Web. 25 Apr 2019.

Vancouver:

Syu Y. Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices. [Internet] [Doctoral dissertation]. NSYSU; 2012. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425.

Council of Science Editors:

Syu Y. Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices. [Doctoral Dissertation]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425


NSYSU

14. Hu, Shih-Jie. Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2015, NSYSU

 In this study, three kinds of resistive switching mechanism: FormingãResetãSet process in Resistance Random Access Memory(RRAM) will be discussion. And measure by Agilent B1530 fast… (more)

Subjects/Keywords: RRAM; Resistance Switching; Thermal Effect; Charge Quantity

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hu, S. (2015). Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710115-103817

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hu, Shih-Jie. “Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory.” 2015. Thesis, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710115-103817.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hu, Shih-Jie. “Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory.” 2015. Web. 25 Apr 2019.

Vancouver:

Hu S. Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710115-103817.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hu S. Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710115-103817

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Sherbrooke

15. Valverde, Lucas. Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory » .

Degree: 2015, Université de Sherbrooke

 Avec le développement des technologies portables, les mémoires de type flash sont de plus en plus utilisées. Les compétences requises pour répondre au marché florissant… (more)

Subjects/Keywords: RRAM; BRS; BEOL; Mémoire; Procédé damascène

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Valverde, L. (2015). Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory » . (Masters Thesis). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/6041

Chicago Manual of Style (16th Edition):

Valverde, Lucas. “Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory » .” 2015. Masters Thesis, Université de Sherbrooke. Accessed April 25, 2019. http://hdl.handle.net/11143/6041.

MLA Handbook (7th Edition):

Valverde, Lucas. “Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory » .” 2015. Web. 25 Apr 2019.

Vancouver:

Valverde L. Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory » . [Internet] [Masters thesis]. Université de Sherbrooke; 2015. [cited 2019 Apr 25]. Available from: http://hdl.handle.net/11143/6041.

Council of Science Editors:

Valverde L. Conception de cellules bipolaires commutables pour la technologie « Resistive Random Access Memory » . [Masters Thesis]. Université de Sherbrooke; 2015. Available from: http://hdl.handle.net/11143/6041


University of Cincinnati

16. Nguyen, Thinh H. Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM.

Degree: MS, Engineering and Applied Science: Electrical Engineering, 2018, University of Cincinnati

 The effect of Zr deposition as an interfacial layer between top electrode and oxide layer of HfO2-based Resistive Random-Access Memory (RRAM) was studied in the… (more)

Subjects/Keywords: Electrical Engineering; Semiconductor; Reflection; RRAM; HfO2

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APA (6th Edition):

Nguyen, T. H. (2018). Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043

Chicago Manual of Style (16th Edition):

Nguyen, Thinh H. “Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM.” 2018. Masters Thesis, University of Cincinnati. Accessed April 25, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043.

MLA Handbook (7th Edition):

Nguyen, Thinh H. “Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM.” 2018. Web. 25 Apr 2019.

Vancouver:

Nguyen TH. Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM. [Internet] [Masters thesis]. University of Cincinnati; 2018. [cited 2019 Apr 25]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043.

Council of Science Editors:

Nguyen TH. Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM. [Masters Thesis]. University of Cincinnati; 2018. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043

17. Cabout, Thomas. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications.

Degree: Docteur es, Micro et Nanoélectronique, 2014, Aix Marseille Université

Aujourd'hui, le marché des mémoires non-volatile est dominé par la technologie Flash. Cependant, cette technologie est en passe d'atteindre ses limites de miniaturisation. Ainsi, dans… (more)

Subjects/Keywords: Mémoire; Rram; OxRRAM; Commutation; Résistance; Oxyde; HfO2; Memory; Rram; OxRRAM; Commutation; Resistance; Oxide; HfO2

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Cabout, T. (2014). Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2014AIXM4778

Chicago Manual of Style (16th Edition):

Cabout, Thomas. “Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications.” 2014. Doctoral Dissertation, Aix Marseille Université. Accessed April 25, 2019. http://www.theses.fr/2014AIXM4778.

MLA Handbook (7th Edition):

Cabout, Thomas. “Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications.” 2014. Web. 25 Apr 2019.

Vancouver:

Cabout T. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications. [Internet] [Doctoral dissertation]. Aix Marseille Université 2014. [cited 2019 Apr 25]. Available from: http://www.theses.fr/2014AIXM4778.

Council of Science Editors:

Cabout T. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications. [Doctoral Dissertation]. Aix Marseille Université 2014. Available from: http://www.theses.fr/2014AIXM4778


NSYSU

18. Huang, Jheng-Jie. Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device.

Degree: PhD, Physics, 2013, NSYSU

 With the development of portable electronic products, the requirement of nonvolatile memory is higher than before. In order to increase the capacity of nonvolatile memory… (more)

Subjects/Keywords: gallium oxide; indium-gallium-zinc oxide thin film transistors; BiFeO; recoverable RRAM device; nonvolatile memory; RRAM; resistive random access memory

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Huang, J. (2013). Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157

Chicago Manual of Style (16th Edition):

Huang, Jheng-Jie. “Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device.” 2013. Doctoral Dissertation, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157.

MLA Handbook (7th Edition):

Huang, Jheng-Jie. “Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device.” 2013. Web. 25 Apr 2019.

Vancouver:

Huang J. Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157.

Council of Science Editors:

Huang J. Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157

19. Kazar Mendes, Munique. X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs : Études par spectroscopie photoélectronique par rayons X de la commutation résistive dans les CBRAMs à base de Te.

Degree: Docteur es, Physique, 2018, Paris Saclay

 Les mémoires à pont conducteur (CBRAM) sont une option actuellement étudiée pour la prochaine génération de mémoires non volatiles. Le stockage des données est basé… (more)

Subjects/Keywords: CBRAMs; RRAM; Spectroscopie de photoélectrons; Chimie de l'interface; HAXPES; CBRAM; RRAM; Photoelectron spectroscopy; Interface chemistry; HAXPES

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APA (6th Edition):

Kazar Mendes, M. (2018). X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs : Études par spectroscopie photoélectronique par rayons X de la commutation résistive dans les CBRAMs à base de Te. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2018SACLS285

Chicago Manual of Style (16th Edition):

Kazar Mendes, Munique. “X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs : Études par spectroscopie photoélectronique par rayons X de la commutation résistive dans les CBRAMs à base de Te.” 2018. Doctoral Dissertation, Paris Saclay. Accessed April 25, 2019. http://www.theses.fr/2018SACLS285.

MLA Handbook (7th Edition):

Kazar Mendes, Munique. “X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs : Études par spectroscopie photoélectronique par rayons X de la commutation résistive dans les CBRAMs à base de Te.” 2018. Web. 25 Apr 2019.

Vancouver:

Kazar Mendes M. X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs : Études par spectroscopie photoélectronique par rayons X de la commutation résistive dans les CBRAMs à base de Te. [Internet] [Doctoral dissertation]. Paris Saclay; 2018. [cited 2019 Apr 25]. Available from: http://www.theses.fr/2018SACLS285.

Council of Science Editors:

Kazar Mendes M. X-ray photoelectron spectroscopy investigations of resistive switching in Te-based CBRAMs : Études par spectroscopie photoélectronique par rayons X de la commutation résistive dans les CBRAMs à base de Te. [Doctoral Dissertation]. Paris Saclay; 2018. Available from: http://www.theses.fr/2018SACLS285

20. Onkaraiah, Santhosh. Modélisation et conception de circuits à base de mémoires non-volatiles résistives innovantes : Compact modeling and circuit design of resistive memory devices for innovative applications.

Degree: Docteur es, Micro et Nanoélectronique, 2013, Aix Marseille Université

Les limites rencontrées par les dernières générations de mémoires Flash et DRAM (Dynamic Random Access Memory) nécessitent la recherche de nouvelles variables physiques (autres que… (more)

Subjects/Keywords: OxRRAM; CBRAM; RRAM; Modele compacte; NVFPGA; NVFF; 1T-2R; OxRRAM; CBRAM; RRAM; Compact modeling; NVFPGA; NVFF; 1T-2R; NVSWITCH

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Onkaraiah, S. (2013). Modélisation et conception de circuits à base de mémoires non-volatiles résistives innovantes : Compact modeling and circuit design of resistive memory devices for innovative applications. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2013AIXM4759

Chicago Manual of Style (16th Edition):

Onkaraiah, Santhosh. “Modélisation et conception de circuits à base de mémoires non-volatiles résistives innovantes : Compact modeling and circuit design of resistive memory devices for innovative applications.” 2013. Doctoral Dissertation, Aix Marseille Université. Accessed April 25, 2019. http://www.theses.fr/2013AIXM4759.

MLA Handbook (7th Edition):

Onkaraiah, Santhosh. “Modélisation et conception de circuits à base de mémoires non-volatiles résistives innovantes : Compact modeling and circuit design of resistive memory devices for innovative applications.” 2013. Web. 25 Apr 2019.

Vancouver:

Onkaraiah S. Modélisation et conception de circuits à base de mémoires non-volatiles résistives innovantes : Compact modeling and circuit design of resistive memory devices for innovative applications. [Internet] [Doctoral dissertation]. Aix Marseille Université 2013. [cited 2019 Apr 25]. Available from: http://www.theses.fr/2013AIXM4759.

Council of Science Editors:

Onkaraiah S. Modélisation et conception de circuits à base de mémoires non-volatiles résistives innovantes : Compact modeling and circuit design of resistive memory devices for innovative applications. [Doctoral Dissertation]. Aix Marseille Université 2013. Available from: http://www.theses.fr/2013AIXM4759

21. Garbin, Daniele. Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques : A variability study of PCM and OxRAM technologies for use as synapses in neuromorphic systems.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes

Le cerveau humain est composé d’un grand nombre de réseaux neuraux interconnectés, dont les neurones et les synapses en sont les briques constitutives. Caractérisé par… (more)

Subjects/Keywords: Neuromorphique; Mémoires resistives; RRAM; PCM; PxRAM; Mémoire à changement de phase; Neuromorphic; Resistive memory; RRAM; OxRAM; Phase-change memory; PCM; 620

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APA (6th Edition):

Garbin, D. (2015). Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques : A variability study of PCM and OxRAM technologies for use as synapses in neuromorphic systems. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAT133

Chicago Manual of Style (16th Edition):

Garbin, Daniele. “Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques : A variability study of PCM and OxRAM technologies for use as synapses in neuromorphic systems.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed April 25, 2019. http://www.theses.fr/2015GREAT133.

MLA Handbook (7th Edition):

Garbin, Daniele. “Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques : A variability study of PCM and OxRAM technologies for use as synapses in neuromorphic systems.” 2015. Web. 25 Apr 2019.

Vancouver:

Garbin D. Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques : A variability study of PCM and OxRAM technologies for use as synapses in neuromorphic systems. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2019 Apr 25]. Available from: http://www.theses.fr/2015GREAT133.

Council of Science Editors:

Garbin D. Etude de la variabilité des technologies PCM et OxRAM pour leur utilisation en tant que synapses dans les systèmes neuromorphiques : A variability study of PCM and OxRAM technologies for use as synapses in neuromorphic systems. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAT133


NSYSU

22. Yang, Cheng-Chi. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 We find that the forming voltage will become larger when the cell size is scale down which might deter the real applications for RRAM devices.… (more)

Subjects/Keywords: Thermal conductivity coefficient; Dielectric coefficient; Reliability; Hafnium oxide; Side wall; RRAM

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APA (6th Edition):

Yang, C. (2017). Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Cheng-Chi. “Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.” 2017. Thesis, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Cheng-Chi. “Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.” 2017. Web. 25 Apr 2019.

Vancouver:

Yang C. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang C. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

23. Lin, Wen-yan. Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 In this study, we demonstrate completely different characteristics with different operating modes and analyze the electrical field effect to confirm the filament dissolution behavior. Compared… (more)

Subjects/Keywords: fast IV; thermal effect; HRS; electrical field effect; RRAM

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APA (6th Edition):

Lin, W. (2017). Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-135318

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Wen-yan. “Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory.” 2017. Thesis, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-135318.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Wen-yan. “Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory.” 2017. Web. 25 Apr 2019.

Vancouver:

Lin W. Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-135318.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin W. Study on Reset Dynamic Switching Mechanisms of Oxide-based Resistance Random Access Memory. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-135318

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Lin, Hong-yang. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.

Degree: Master, Materials and Optoelectronic Science, 2013, NSYSU

 Resistive Random Access Memory (RRAM) is considered as one of the most promising candidate for the next-generation memories due to their excellent properties such as… (more)

Subjects/Keywords: Hafnium Oxide; RRAM; Concentration of Oxygen; Nernst Equation; Energy Dissipation Rate

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, H. (2013). Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Hong-yang. “Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.” 2013. Thesis, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Hong-yang. “Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.” 2013. Web. 25 Apr 2019.

Vancouver:

Lin H. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin H. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

25. Chen, Yi-jiun. Characterization of Amorphous Carbon Resistive Random Access Memory.

Degree: PhD, Mechanical and Electro-Mechanical Engineering, 2014, NSYSU

 The increasing demand for flash memory densities by scaling dimension is a formidable challenge due to physical limitations. Recently, carbon-based resistive random access memory (RRAM)… (more)

Subjects/Keywords: sp2; conjugated double bond; DLC; sp3; amorphous carbon; resistance switching; RRAM

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APA (6th Edition):

Chen, Y. (2014). Characterization of Amorphous Carbon Resistive Random Access Memory. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624114-154719

Chicago Manual of Style (16th Edition):

Chen, Yi-jiun. “Characterization of Amorphous Carbon Resistive Random Access Memory.” 2014. Doctoral Dissertation, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624114-154719.

MLA Handbook (7th Edition):

Chen, Yi-jiun. “Characterization of Amorphous Carbon Resistive Random Access Memory.” 2014. Web. 25 Apr 2019.

Vancouver:

Chen Y. Characterization of Amorphous Carbon Resistive Random Access Memory. [Internet] [Doctoral dissertation]. NSYSU; 2014. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624114-154719.

Council of Science Editors:

Chen Y. Characterization of Amorphous Carbon Resistive Random Access Memory. [Doctoral Dissertation]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624114-154719


NSYSU

26. Chang, Kuan-Chang. Study on Supercritical Fluids and Resistance Random Access Memory.

Degree: PhD, Materials and Optoelectronic Science, 2014, NSYSU

 In this dissertation, we first provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. To investigate… (more)

Subjects/Keywords: Silicon oxide; Metal doping; Supercritical CO2 fluids; Graphene oxide; RRAM

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chang, K. (2014). Study on Supercritical Fluids and Resistance Random Access Memory. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902114-033450

Chicago Manual of Style (16th Edition):

Chang, Kuan-Chang. “Study on Supercritical Fluids and Resistance Random Access Memory.” 2014. Doctoral Dissertation, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902114-033450.

MLA Handbook (7th Edition):

Chang, Kuan-Chang. “Study on Supercritical Fluids and Resistance Random Access Memory.” 2014. Web. 25 Apr 2019.

Vancouver:

Chang K. Study on Supercritical Fluids and Resistance Random Access Memory. [Internet] [Doctoral dissertation]. NSYSU; 2014. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902114-033450.

Council of Science Editors:

Chang K. Study on Supercritical Fluids and Resistance Random Access Memory. [Doctoral Dissertation]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0902114-033450


NSYSU

27. Wang, Zhi-yang. Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 The information stored in human brain is different from computer, it storages and transmits messages through analog signal instead of digital signal. In this study,… (more)

Subjects/Keywords: RRAM; CRS; synaptic plasticity; STDP; STM; LTM; analog storage; lithium silicate

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, Z. (2014). Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-133231

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Zhi-yang. “Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems.” 2014. Thesis, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-133231.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Zhi-yang. “Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems.” 2014. Web. 25 Apr 2019.

Vancouver:

Wang Z. Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-133231.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang Z. Study on Applications of LiSiOx Thin-Film Resistance Random Access Memory as Synapse in Neuromorphic Systems. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-133231

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

28. Huang, Jian-bing. The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application.

Degree: Master, Materials and Optoelectronic Science, 2012, NSYSU

 The operating characteristics of non-volatile memory for modern requirement are high-density , low power consumption, fast read and write speed, and good reliability. The floating… (more)

Subjects/Keywords: stability; non-volatile memory; Si-Ge-O; nitrogen doping; RRAM

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Huang, J. (2012). The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-092948

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Jian-bing. “The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application.” 2012. Thesis, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-092948.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Jian-bing. “The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application.” 2012. Web. 25 Apr 2019.

Vancouver:

Huang J. The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-092948.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang J. The research of Silicon-Germanium-Oxide thin film in nonvolatile memory application. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-092948

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

29. Tung, Cheng-Wei. Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory.

Degree: Master, Materials and Optoelectronic Science, 2011, NSYSU

 In this thesis, the resistance switching characteristic of Zn:SiO2 -based memory was studied. The resistive memory was fabricated by sputtering to deposit the Metal/Insulator/Metal (MIM)… (more)

Subjects/Keywords: memory; SiO2; RRAM; hopping conduction; FTIR; XPS; Zinc

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tung, C. (2011). Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-131830

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tung, Cheng-Wei. “Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory.” 2011. Thesis, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-131830.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tung, Cheng-Wei. “Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory.” 2011. Web. 25 Apr 2019.

Vancouver:

Tung C. Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory. [Internet] [Thesis]. NSYSU; 2011. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-131830.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tung C. Study on fabrication and characteristics of Zn-doped SiO2 thin film resistance random access memory. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0828111-131830

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

30. Liao, Kuo-Hsiao. The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2011, NSYSU

 In this study, The bottom electrodeï¼TiNï¼, middle insulator ï¼Snï¼SiO2ï¼, and top electrode ï¼Ptï¼ were deposited respectively by sputtering technique for fabricating the resistive random access… (more)

Subjects/Keywords: RTA; Schottky emission; Sn; RRAM; SiO2; SCCO2; Filament

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Liao, K. (2011). The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826111-031558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liao, Kuo-Hsiao. “The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory.” 2011. Thesis, NSYSU. Accessed April 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826111-031558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liao, Kuo-Hsiao. “The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory.” 2011. Web. 25 Apr 2019.

Vancouver:

Liao K. The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2011. [cited 2019 Apr 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826111-031558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liao K. The Characterization of Sn-doped SiO2 Thin Film Resistance Random Access Memory. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826111-031558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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