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You searched for subject:(RHBD). Showing records 1 – 14 of 14 total matches.

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Vanderbilt University

1. Maharrey, Jeffrey Alan. Dual interlocked logic: a radiation-hardened-by-design technique for single-event logic errors.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 As design choices within a single CMOS technology become ever more complex with each new technology generation, and power consumption constraints push operating voltages lower,… (more)

Subjects/Keywords: single event transient; radiation; rhbd; digital

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APA (6th Edition):

Maharrey, J. A. (2018). Dual interlocked logic: a radiation-hardened-by-design technique for single-event logic errors. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03042018-174735/ ;

Chicago Manual of Style (16th Edition):

Maharrey, Jeffrey Alan. “Dual interlocked logic: a radiation-hardened-by-design technique for single-event logic errors.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed April 19, 2019. http://etd.library.vanderbilt.edu/available/etd-03042018-174735/ ;.

MLA Handbook (7th Edition):

Maharrey, Jeffrey Alan. “Dual interlocked logic: a radiation-hardened-by-design technique for single-event logic errors.” 2018. Web. 19 Apr 2019.

Vancouver:

Maharrey JA. Dual interlocked logic: a radiation-hardened-by-design technique for single-event logic errors. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2019 Apr 19]. Available from: http://etd.library.vanderbilt.edu/available/etd-03042018-174735/ ;.

Council of Science Editors:

Maharrey JA. Dual interlocked logic: a radiation-hardened-by-design technique for single-event logic errors. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-03042018-174735/ ;


Vanderbilt University

2. Parker, Wilson Parris. Single-Event Hardened Analog / Mixed-Signal Circuit Layouts Utilizing Node Splitting with Directional Temporal Filtering.

Degree: MS, Electrical Engineering, 2018, Vanderbilt University

 Transients resulting from ionizing particle strikes are a growing concern for analog and mixed signal (A/MS) circuits as technologies scale down in size. Radiation tolerant… (more)

Subjects/Keywords: RHBD; temporal filtering; circuit peeling; node splitting

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APA (6th Edition):

Parker, W. P. (2018). Single-Event Hardened Analog / Mixed-Signal Circuit Layouts Utilizing Node Splitting with Directional Temporal Filtering. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04162018-190045/ ;

Chicago Manual of Style (16th Edition):

Parker, Wilson Parris. “Single-Event Hardened Analog / Mixed-Signal Circuit Layouts Utilizing Node Splitting with Directional Temporal Filtering.” 2018. Masters Thesis, Vanderbilt University. Accessed April 19, 2019. http://etd.library.vanderbilt.edu/available/etd-04162018-190045/ ;.

MLA Handbook (7th Edition):

Parker, Wilson Parris. “Single-Event Hardened Analog / Mixed-Signal Circuit Layouts Utilizing Node Splitting with Directional Temporal Filtering.” 2018. Web. 19 Apr 2019.

Vancouver:

Parker WP. Single-Event Hardened Analog / Mixed-Signal Circuit Layouts Utilizing Node Splitting with Directional Temporal Filtering. [Internet] [Masters thesis]. Vanderbilt University; 2018. [cited 2019 Apr 19]. Available from: http://etd.library.vanderbilt.edu/available/etd-04162018-190045/ ;.

Council of Science Editors:

Parker WP. Single-Event Hardened Analog / Mixed-Signal Circuit Layouts Utilizing Node Splitting with Directional Temporal Filtering. [Masters Thesis]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-04162018-190045/ ;

3. Uznanski, Slawosz. Monte-Carlo simulation and contribution to understanding of Single-Event-Upset (SEU) mechanisms in CMOS technologies down to 20nm technological node : Decision making for the conservation of atlantic salmon populations (Salmo salar L.).

Degree: Docteur es, Micro et nanoélectronique, 2011, Aix-Marseille 1

L’augmentation de la densité et la réduction de la tension d’alimentation des circuits intégrés rend la contribution des effets singuliers induits par les radiations majoritaire… (more)

Subjects/Keywords: Evénements Singulier; Aléa logiques; Rhbd; Cmos; Sram; Flip-Flop; SEE; SER; SEU; RHBD; Monte-Carlo; CMOS technology; SRAM; Flip-Flop

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APA (6th Edition):

Uznanski, S. (2011). Monte-Carlo simulation and contribution to understanding of Single-Event-Upset (SEU) mechanisms in CMOS technologies down to 20nm technological node : Decision making for the conservation of atlantic salmon populations (Salmo salar L.). (Doctoral Dissertation). Aix-Marseille 1. Retrieved from http://www.theses.fr/2011AIX10222

Chicago Manual of Style (16th Edition):

Uznanski, Slawosz. “Monte-Carlo simulation and contribution to understanding of Single-Event-Upset (SEU) mechanisms in CMOS technologies down to 20nm technological node : Decision making for the conservation of atlantic salmon populations (Salmo salar L.).” 2011. Doctoral Dissertation, Aix-Marseille 1. Accessed April 19, 2019. http://www.theses.fr/2011AIX10222.

MLA Handbook (7th Edition):

Uznanski, Slawosz. “Monte-Carlo simulation and contribution to understanding of Single-Event-Upset (SEU) mechanisms in CMOS technologies down to 20nm technological node : Decision making for the conservation of atlantic salmon populations (Salmo salar L.).” 2011. Web. 19 Apr 2019.

Vancouver:

Uznanski S. Monte-Carlo simulation and contribution to understanding of Single-Event-Upset (SEU) mechanisms in CMOS technologies down to 20nm technological node : Decision making for the conservation of atlantic salmon populations (Salmo salar L.). [Internet] [Doctoral dissertation]. Aix-Marseille 1; 2011. [cited 2019 Apr 19]. Available from: http://www.theses.fr/2011AIX10222.

Council of Science Editors:

Uznanski S. Monte-Carlo simulation and contribution to understanding of Single-Event-Upset (SEU) mechanisms in CMOS technologies down to 20nm technological node : Decision making for the conservation of atlantic salmon populations (Salmo salar L.). [Doctoral Dissertation]. Aix-Marseille 1; 2011. Available from: http://www.theses.fr/2011AIX10222


University of Tennessee – Knoxville

4. Womac, Austin James. The Characterization of a CMOS Radiation Hardened-by-Design Circuit Technique.

Degree: MS, Electrical Engineering, 2013, University of Tennessee – Knoxville

  This thesis presents the analysis, implementation and testing of a circuit-level radiation hardened-by-design (RHBD) technique first presented in [1]. Radiation effects heavily influence the… (more)

Subjects/Keywords: RHBD; TID; digital; radiation testing; leakage current; Electrical and Electronics

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APA (6th Edition):

Womac, A. J. (2013). The Characterization of a CMOS Radiation Hardened-by-Design Circuit Technique. (Thesis). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_gradthes/2479

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Womac, Austin James. “The Characterization of a CMOS Radiation Hardened-by-Design Circuit Technique.” 2013. Thesis, University of Tennessee – Knoxville. Accessed April 19, 2019. https://trace.tennessee.edu/utk_gradthes/2479.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Womac, Austin James. “The Characterization of a CMOS Radiation Hardened-by-Design Circuit Technique.” 2013. Web. 19 Apr 2019.

Vancouver:

Womac AJ. The Characterization of a CMOS Radiation Hardened-by-Design Circuit Technique. [Internet] [Thesis]. University of Tennessee – Knoxville; 2013. [cited 2019 Apr 19]. Available from: https://trace.tennessee.edu/utk_gradthes/2479.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Womac AJ. The Characterization of a CMOS Radiation Hardened-by-Design Circuit Technique. [Thesis]. University of Tennessee – Knoxville; 2013. Available from: https://trace.tennessee.edu/utk_gradthes/2479

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade do Rio Grande do Sul

5. Vaz, Pablo Ilha. Efeitos da radiação ionizante e técnicas de proteção aplicadas a projetos de dispositivos MOS customizados.

Degree: 2015, Universidade do Rio Grande do Sul

Os efeitos produzidos pela interação da radiação ionizante com os circuitos integrados podem ser classificados em efeitos de eventos únicos (Single Event Effects - SEE),… (more)

Subjects/Keywords: Enclosed-gate; Microeletrônica; RHBD; Radiação ionizante; CMOS; TID; SEE; Hardened by design; ELT

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APA (6th Edition):

Vaz, P. I. (2015). Efeitos da radiação ionizante e técnicas de proteção aplicadas a projetos de dispositivos MOS customizados. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/129819

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vaz, Pablo Ilha. “Efeitos da radiação ionizante e técnicas de proteção aplicadas a projetos de dispositivos MOS customizados.” 2015. Thesis, Universidade do Rio Grande do Sul. Accessed April 19, 2019. http://hdl.handle.net/10183/129819.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vaz, Pablo Ilha. “Efeitos da radiação ionizante e técnicas de proteção aplicadas a projetos de dispositivos MOS customizados.” 2015. Web. 19 Apr 2019.

Vancouver:

Vaz PI. Efeitos da radiação ionizante e técnicas de proteção aplicadas a projetos de dispositivos MOS customizados. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2015. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/10183/129819.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vaz PI. Efeitos da radiação ionizante e técnicas de proteção aplicadas a projetos de dispositivos MOS customizados. [Thesis]. Universidade do Rio Grande do Sul; 2015. Available from: http://hdl.handle.net/10183/129819

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

6. Olson, Brian David. Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters.

Degree: PhD, Electrical Engineering, 2010, Vanderbilt University

 Analog-to-digital converters (ADCs) are necessary circuits in many space, military, and medical circuit applications. Intelligence, surveillance, reconnaissance, and communication missions all require high performance ADCs.… (more)

Subjects/Keywords: single-events; SEU; SEE; RHBD; radiation hardened by design; ADC; single-event effects; analog-to-digital converters

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APA (6th Edition):

Olson, B. D. (2010). Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12102010-152348/ ;

Chicago Manual of Style (16th Edition):

Olson, Brian David. “Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed April 19, 2019. http://etd.library.vanderbilt.edu/available/etd-12102010-152348/ ;.

MLA Handbook (7th Edition):

Olson, Brian David. “Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters.” 2010. Web. 19 Apr 2019.

Vancouver:

Olson BD. Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2019 Apr 19]. Available from: http://etd.library.vanderbilt.edu/available/etd-12102010-152348/ ;.

Council of Science Editors:

Olson BD. Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-12102010-152348/ ;


Georgia Tech

7. Phillips, Stanley D. Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies.

Degree: MS, Electrical and Computer Engineering, 2009, Georgia Tech

 Extreme environment applications impose stringent demands on technology platforms that are incorporated in electronic systems. Space is a classic extreme environment, encompassing both large temperature… (more)

Subjects/Keywords: Single event upet; RHBD; Single event effects; SiGe HBTs; Silicon-germanium; Metal oxide semiconductors, Complementary Effect of radiation on; Bipolar transistors Effect of radiation on

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APA (6th Edition):

Phillips, S. D. (2009). Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/29640

Chicago Manual of Style (16th Edition):

Phillips, Stanley D. “Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies.” 2009. Masters Thesis, Georgia Tech. Accessed April 19, 2019. http://hdl.handle.net/1853/29640.

MLA Handbook (7th Edition):

Phillips, Stanley D. “Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies.” 2009. Web. 19 Apr 2019.

Vancouver:

Phillips SD. Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies. [Internet] [Masters thesis]. Georgia Tech; 2009. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/1853/29640.

Council of Science Editors:

Phillips SD. Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies. [Masters Thesis]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/29640


Wright State University

8. Hopkins, Thomas A. An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design.

Degree: MSEgr, Electrical Engineering, 2010, Wright State University

  A digital single sideband modulator (DSSM) for a digital radio frequency memory (DRFM) was designed and implemented in a commercial 90-nm radiation-hardened-by-design (RHBD) structured… (more)

Subjects/Keywords: Electrical Engineering; digital single sideband modulator; DSSM; digital radio frequency memory; DRFM; Radiation hardened; rad hard; radiation hardened by design; RHBD; electronic warfare; EW; automated; guard ring; guard band; single event transient; SET

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APA (6th Edition):

Hopkins, T. A. (2010). An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design. (Masters Thesis). Wright State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=wright1281645939

Chicago Manual of Style (16th Edition):

Hopkins, Thomas A. “An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design.” 2010. Masters Thesis, Wright State University. Accessed April 19, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=wright1281645939.

MLA Handbook (7th Edition):

Hopkins, Thomas A. “An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design.” 2010. Web. 19 Apr 2019.

Vancouver:

Hopkins TA. An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design. [Internet] [Masters thesis]. Wright State University; 2010. [cited 2019 Apr 19]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=wright1281645939.

Council of Science Editors:

Hopkins TA. An Automated Approach to a 90-nm CMOS DRFM DSSM Circuit Design. [Masters Thesis]. Wright State University; 2010. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=wright1281645939


Georgia Tech

9. Diestelhorst, Ryan M. Silicon-germanium BiCMOS device and circuit design for extreme environment applications.

Degree: MS, Electrical and Computer Engineering, 2009, Georgia Tech

 Silicon-germanium (SiGe) BiCMOS technology platforms have proven invaluable for implementing a wide variety of digital, RF, and mixed-signal applications in extreme environments such as space,… (more)

Subjects/Keywords: RHBD; Single event effects; Bipolar transistors; Metal oxide semiconductors, Complementary; Silicon alloys Effect of temperature on; Germanium Effect of temperature on; Germanium Effect of radiation on; Silicon alloys Effect of radiation on

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APA (6th Edition):

Diestelhorst, R. M. (2009). Silicon-germanium BiCMOS device and circuit design for extreme environment applications. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/28180

Chicago Manual of Style (16th Edition):

Diestelhorst, Ryan M. “Silicon-germanium BiCMOS device and circuit design for extreme environment applications.” 2009. Masters Thesis, Georgia Tech. Accessed April 19, 2019. http://hdl.handle.net/1853/28180.

MLA Handbook (7th Edition):

Diestelhorst, Ryan M. “Silicon-germanium BiCMOS device and circuit design for extreme environment applications.” 2009. Web. 19 Apr 2019.

Vancouver:

Diestelhorst RM. Silicon-germanium BiCMOS device and circuit design for extreme environment applications. [Internet] [Masters thesis]. Georgia Tech; 2009. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/1853/28180.

Council of Science Editors:

Diestelhorst RM. Silicon-germanium BiCMOS device and circuit design for extreme environment applications. [Masters Thesis]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/28180

10. Phillips, Stanley David. Single event effects and radiation hardening methodologies in SiGe HBTs for extreme environment applications.

Degree: PhD, Electrical and Computer Engineering, 2012, Georgia Tech

 Field-effect transistor technologies have been critical building blocks for satellite systems since their introduction into the microelectronics industry. The extremely high cost of launching payloads… (more)

Subjects/Keywords: SEU; RHBD; SEE; SiGe HBTs; Field-effect transistors; Transistors; Semiconductors; Metal oxide semiconductors, Complementary

…x28;RHBD), which involves alterations to circuit architectures or changes to device… …to pursue RHBD techniques that achieve acceptable levels of radiation tolerance while… 

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APA (6th Edition):

Phillips, S. D. (2012). Single event effects and radiation hardening methodologies in SiGe HBTs for extreme environment applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/45854

Chicago Manual of Style (16th Edition):

Phillips, Stanley David. “Single event effects and radiation hardening methodologies in SiGe HBTs for extreme environment applications.” 2012. Doctoral Dissertation, Georgia Tech. Accessed April 19, 2019. http://hdl.handle.net/1853/45854.

MLA Handbook (7th Edition):

Phillips, Stanley David. “Single event effects and radiation hardening methodologies in SiGe HBTs for extreme environment applications.” 2012. Web. 19 Apr 2019.

Vancouver:

Phillips SD. Single event effects and radiation hardening methodologies in SiGe HBTs for extreme environment applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2012. [cited 2019 Apr 19]. Available from: http://hdl.handle.net/1853/45854.

Council of Science Editors:

Phillips SD. Single event effects and radiation hardening methodologies in SiGe HBTs for extreme environment applications. [Doctoral Dissertation]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/45854


Vanderbilt University

11. Narasimham, Balaji. On Chip Characterization of Single Event Transient Pulse Widths.

Degree: MS, Electrical Engineering, 2005, Vanderbilt University

 It is now well known to the radiation effects community that single event effects caused by energetic particles, particularly single event transients, will be among… (more)

Subjects/Keywords: transient pulse width; SET; SEU; single event; CMOS; RHBD; Radiation hardening; Integrated circuits  – Effect of radiation on  – Computer simulation

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APA (6th Edition):

Narasimham, B. (2005). On Chip Characterization of Single Event Transient Pulse Widths. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11302005-010732/ ;

Chicago Manual of Style (16th Edition):

Narasimham, Balaji. “On Chip Characterization of Single Event Transient Pulse Widths.” 2005. Masters Thesis, Vanderbilt University. Accessed April 19, 2019. http://etd.library.vanderbilt.edu/available/etd-11302005-010732/ ;.

MLA Handbook (7th Edition):

Narasimham, Balaji. “On Chip Characterization of Single Event Transient Pulse Widths.” 2005. Web. 19 Apr 2019.

Vancouver:

Narasimham B. On Chip Characterization of Single Event Transient Pulse Widths. [Internet] [Masters thesis]. Vanderbilt University; 2005. [cited 2019 Apr 19]. Available from: http://etd.library.vanderbilt.edu/available/etd-11302005-010732/ ;.

Council of Science Editors:

Narasimham B. On Chip Characterization of Single Event Transient Pulse Widths. [Masters Thesis]. Vanderbilt University; 2005. Available from: http://etd.library.vanderbilt.edu/available/etd-11302005-010732/ ;

12. Blaine, Raymond Wesley. The Design of Single-Event Hardened Analog and Mixed-Signal Circuits.

Degree: PhD, Electrical Engineering, 2014, Vanderbilt University

 Modern systems-on-chip (SOCs) must incorporate high-performance analog and mixed-signal (A/MS) circuits with digital systems onto a single chip. This integration necessitates that these A/MS circuits… (more)

Subjects/Keywords: Microelectronics; A/MS Circuit Design; Radiation Hardened by Design (RHBD); Single-Event Effects

…102 V-3 RHBD switched capacitor S/H amplifier using node splitting [62]… …162 VI-38 Comparison of the baseline and RHBD diff amp for all five simulated LETs. The… …RHBD version is peeled twice (four parallel paths) and the input devices have a DCC… …radiation-hardened by design (RHBD) techniques that can be classified into two broad… …implement three novel RHBD techniques to a large array of A/MS circuit architectures. 4 Chapter… 

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APA (6th Edition):

Blaine, R. W. (2014). The Design of Single-Event Hardened Analog and Mixed-Signal Circuits. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04072014-110825/ ;

Chicago Manual of Style (16th Edition):

Blaine, Raymond Wesley. “The Design of Single-Event Hardened Analog and Mixed-Signal Circuits.” 2014. Doctoral Dissertation, Vanderbilt University. Accessed April 19, 2019. http://etd.library.vanderbilt.edu/available/etd-04072014-110825/ ;.

MLA Handbook (7th Edition):

Blaine, Raymond Wesley. “The Design of Single-Event Hardened Analog and Mixed-Signal Circuits.” 2014. Web. 19 Apr 2019.

Vancouver:

Blaine RW. The Design of Single-Event Hardened Analog and Mixed-Signal Circuits. [Internet] [Doctoral dissertation]. Vanderbilt University; 2014. [cited 2019 Apr 19]. Available from: http://etd.library.vanderbilt.edu/available/etd-04072014-110825/ ;.

Council of Science Editors:

Blaine RW. The Design of Single-Event Hardened Analog and Mixed-Signal Circuits. [Doctoral Dissertation]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-04072014-110825/ ;

13. Walldén, Johan. Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques.

Degree: The Institute of Technology, 2014, Linköping UniversityLinköping University

  The aim with this thesis has been to make a survey of radiation hardened electronics, explaining why and how radiation affects electronics and what… (more)

Subjects/Keywords: Radiation; Radiation Hardening By Design; RHBD; Displacement Damage; DDD; Total Ionizing

…SOI BOX FinFET FDSOI PDSOI VDMOS LED CTR ASIC COTS 3D-IC RHBD TMR DICE DCC EDAC SEC-DED DWC… 

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APA (6th Edition):

Walldén, J. (2014). Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques. (Thesis). Linköping UniversityLinköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Walldén, Johan. “Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques.” 2014. Thesis, Linköping UniversityLinköping University. Accessed April 19, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Walldén, Johan. “Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques.” 2014. Web. 19 Apr 2019.

Vancouver:

Walldén J. Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques. [Internet] [Thesis]. Linköping UniversityLinköping University; 2014. [cited 2019 Apr 19]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Walldén J. Radiation Induced Effects in Electronic Devices and Radiation Hardening By Design Techniques. [Thesis]. Linköping UniversityLinköping University; 2014. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109343

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

14. Nsengiyumva, Patrick. Characterization of the CMOS FinFET structure on single-event effects â basic charge collection mechanisms and soft error modes.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 With technology scaling at 22 nm and beyond, the semiconductor industry has successfully transitioned to 3D multi-gate transistors (i.e., FinFETs) due to the excellent FinFET… (more)

Subjects/Keywords: RHBD; Charge Collection Mechanisms; Integrated Circuit; SEE Simulations; Soft Error Modes; Bulk Technologies; CMOS IC; Angular SEE Mechanisms; Rad-hard; Three-Dimensional Transistor; Multi-Gate Transistor; Planar Technologies; Radiation Effects; Single-Event Upset (SEU); Spatial and Temporal SEE Considerations; SET Pulse Width; Single-Event Transient (SET); FinFET Geometric and Orientation Dependence; FinFET Structure; Single-Event Effects (SEE); FinFET; Digital Circuits; Alpha Particle Data; Upset Cross-Section; Flip-flop; Heavy-Ion Data; TCAD; Advanced Technologies

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APA (6th Edition):

Nsengiyumva, P. (2018). Characterization of the CMOS FinFET structure on single-event effects â basic charge collection mechanisms and soft error modes. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03202018-160105/ ;

Chicago Manual of Style (16th Edition):

Nsengiyumva, Patrick. “Characterization of the CMOS FinFET structure on single-event effects â basic charge collection mechanisms and soft error modes.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed April 19, 2019. http://etd.library.vanderbilt.edu/available/etd-03202018-160105/ ;.

MLA Handbook (7th Edition):

Nsengiyumva, Patrick. “Characterization of the CMOS FinFET structure on single-event effects â basic charge collection mechanisms and soft error modes.” 2018. Web. 19 Apr 2019.

Vancouver:

Nsengiyumva P. Characterization of the CMOS FinFET structure on single-event effects â basic charge collection mechanisms and soft error modes. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2019 Apr 19]. Available from: http://etd.library.vanderbilt.edu/available/etd-03202018-160105/ ;.

Council of Science Editors:

Nsengiyumva P. Characterization of the CMOS FinFET structure on single-event effects â basic charge collection mechanisms and soft error modes. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-03202018-160105/ ;

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