You searched for subject:(RF modeling)
.
Showing records 1 – 30 of
50 total matches.
◁ [1] [2] ▶

University of Oklahoma
1.
Atash Bahar, Sattar.
RF Modeling and Electromagnetic Analysis of Implantable Devices in Magnetic Resonance Imaging.
Degree: PhD, 2017, University of Oklahoma
URL: http://hdl.handle.net/11244/52941
► Magnetic Resonance Imaging (MRI) has become a generally accepted medical procedure and it is estimated that all the U.S. population will have at least one…
(more)
▼ Magnetic Resonance Imaging (MRI) has become a generally accepted medical procedure and it is estimated that all the U.S. population will have at least one MRI scan in their lifetime. Unlike common radiography and computed tomography, MRI has many advantages including its nonionizing nature and the capability to distinguish soft tissues. However, the substantial benefits of MRI are often not available to patients with implanted medical devices, such as a pacemaker, an implantable cardiovascular device, a deep brain stimulator, or a neurostimulator.
MRIs utilize three powerful fields in the process of producing images, static field, gradient field and Radio Frequency (
RF) field that coexist during the scanning. The interaction between the implantable device and the
RF electromagnetic field is the main hazard during MRI scanning for most active implantable medical devices. The conductive parts, mainly, the lead wire, act like antennas that pick up the available incident energy. This may result in excessive heating with the capacity for tissue damage . Moreover, the
RF power delivered to the Implantable Pulse Generator (IPG) is another concern as it can damage the internal circuitry .
In this research, a comprehensive model of the implant in the presence of MRI
RF waves is presented. This circuit model represents the induced current and is used to design a lead that minimizes the coupled power to the IPG. This model significantly simplifies designing a new lead by removing Electromagnetic (EM) simulation of implantable devices inside the human body. Also, a circuit model is introduced that extracts the transfer function from the measured parameters of the lead. A miniaturized
RF power measurement setup that conforms to the IPG case is designed and used to measure the coupled
RF power to the IPG without using external components. This method of measurement, improves the accuracy of the measurement and can be used to measure
RF coupled power to the antenna. For communication to the implant using Bluetooth technology, an antenna is designed and the effectiveness of the new measurement setup for the coupled MRI
RF waves to the antenna port is demonstrated.
Advisors/Committee Members: Sigmarsson, Hjalti (advisor), Salazar-Cerreño, Jorge (committee member), Zhang, Rockee (committee member), Fulton, Caleb (committee member), Floyd, Royce (committee member).
Subjects/Keywords: RF modeling; Antenna; Implantable device
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Atash Bahar, S. (2017). RF Modeling and Electromagnetic Analysis of Implantable Devices in Magnetic Resonance Imaging. (Doctoral Dissertation). University of Oklahoma. Retrieved from http://hdl.handle.net/11244/52941
Chicago Manual of Style (16th Edition):
Atash Bahar, Sattar. “RF Modeling and Electromagnetic Analysis of Implantable Devices in Magnetic Resonance Imaging.” 2017. Doctoral Dissertation, University of Oklahoma. Accessed March 07, 2021.
http://hdl.handle.net/11244/52941.
MLA Handbook (7th Edition):
Atash Bahar, Sattar. “RF Modeling and Electromagnetic Analysis of Implantable Devices in Magnetic Resonance Imaging.” 2017. Web. 07 Mar 2021.
Vancouver:
Atash Bahar S. RF Modeling and Electromagnetic Analysis of Implantable Devices in Magnetic Resonance Imaging. [Internet] [Doctoral dissertation]. University of Oklahoma; 2017. [cited 2021 Mar 07].
Available from: http://hdl.handle.net/11244/52941.
Council of Science Editors:
Atash Bahar S. RF Modeling and Electromagnetic Analysis of Implantable Devices in Magnetic Resonance Imaging. [Doctoral Dissertation]. University of Oklahoma; 2017. Available from: http://hdl.handle.net/11244/52941
2.
Saijets, Jan.
MOSFET RF Characterization Using Bulk and SOI CMOS Technologies.
Degree: 2007, VTT Technical Research Centre of Finland
URL: http://lib.tkk.fi/Diss/2007/isbn9789513870256/
► MOSFET radio-frequency characterization and modeling is studied, both with SOI CMOS and bulk CMOS technologies. The network analyzer measurement uncertainties are studied, as is their…
(more)
▼ MOSFET radio-frequency characterization and modeling is studied, both with SOI CMOS and bulk CMOS technologies. The network analyzer measurement uncertainties are studied, as is their effect on the small signal parameter extraction of MOS devices. These results can be used as guidelines for designing MOS RF characterization layouts with as small an AC extraction error as possible. The results can also be used in RF model extraction as criteria for required optimization accuracy. Modifications to the digital CMOS model equivalent circuit are studied to achieve better RF behavior for the MOS model. The benefit of absorbing the drain and source parasitic series resistances into the current description is evaluated. It seems that correct high-frequency behavior is not possible to describe using this technique. The series resistances need to be defined extrinsically. Different bulk network alternatives were evaluated using scalable device models up to 10 GHz. Accurate output impedance behavior of the model requires a bulk resistance network. It seems that good accuracy improvement is achieved with just a single bulk resistor. Additional improvement is achieved by increasing the number of resistors to three. At this used frequency range no further accuracy improvement was achieved by increasing the resistor amount over three. Two modeling approaches describing the distributed gate behavior are also studied with different MOS transistor layouts. Both approaches improve the RF characteristics to some extent but with limited device geometry. Both distributed gate models describe well the high frequency device behavior of devices not commonly used at radio frequencies.
MOSFETin radiotaajuuskarakterisointia ja mallitusta tarkastellaan sekä SOI CMOS että bulk CMOS -teknologioilla. Piirianalysaattorien mittausepävarmuutta tarkastellaan ja niiden vaikutusta MOS-transistorin piensignaaliparametrien ekstraktointiin. Näitä tuloksia voidaan käyttää ohjenuorana RF MOS -karakterisointiin käytettävien piirikuvioiden suunnittelussa, kun halutaan AC-ekstraktoinnin virhe mahdollisimman pieneksi. Tuloksia voidaan käyttää myös RF-mallin ekstraktoinnissa halutun optimointitarkkuuden kriteerinä. Digitaalisen CMOS-mallin vastinpiirimuunnelmia on tarkasteltu tarkoituksena saada MOS-mallille paremmat radiotaajuusominaisuudet. Kanavan kanssa sarjassa olevien parasiittisten vastusten vaikutusta on tarkasteltu, kun ne ovat joko erillisinä tai suoraan virtayhtälöön sisällytettyinä. Jälkimmäisen tavan hyötyä on arvioitu. Näyttää siltä, että oikeanlaatuisen suurtaajuuskäyttäytymisen kuvaaminen ei onnistu tällä tekniikalla. Kanavan kanssa sarjassa olevat vastukset on määriteltävä ulkoisiksi. Erilaisia substraattivastinpiirien vaihtoehtoja on arvioitu käyttäen skaalautuvia transistorimalleja 10 GHz:n taajuuteen asti. Tarkan ulostuloimpedanssin kuvaaminen edellyttää transistorille substraattivastinpiiriä. Näyttää siltä, että merkittävään mallin tarkkuuden parantumiseen riittää yksi ainoa substraattivastus. Tarkkuus paranee tästäkin lisättäessä…
Advisors/Committee Members: Helsinki University of Technology, Department of Electrical and Communications Engineering.
Subjects/Keywords: RF; CMOS; modeling; MOSFET; measurement uncertainty
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Saijets, J. (2007). MOSFET RF Characterization Using Bulk and SOI CMOS Technologies. (Thesis). VTT Technical Research Centre of Finland. Retrieved from http://lib.tkk.fi/Diss/2007/isbn9789513870256/
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Saijets, Jan. “MOSFET RF Characterization Using Bulk and SOI CMOS Technologies.” 2007. Thesis, VTT Technical Research Centre of Finland. Accessed March 07, 2021.
http://lib.tkk.fi/Diss/2007/isbn9789513870256/.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Saijets, Jan. “MOSFET RF Characterization Using Bulk and SOI CMOS Technologies.” 2007. Web. 07 Mar 2021.
Vancouver:
Saijets J. MOSFET RF Characterization Using Bulk and SOI CMOS Technologies. [Internet] [Thesis]. VTT Technical Research Centre of Finland; 2007. [cited 2021 Mar 07].
Available from: http://lib.tkk.fi/Diss/2007/isbn9789513870256/.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Saijets J. MOSFET RF Characterization Using Bulk and SOI CMOS Technologies. [Thesis]. VTT Technical Research Centre of Finland; 2007. Available from: http://lib.tkk.fi/Diss/2007/isbn9789513870256/
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Universitat Rovira i Virgili
3.
Nae, Bogdan Mihai.
Compact modeling of the rf and noise behavior of multiple-gate mosfets.
Degree: Departament d'Enginyeria Electrònica, Elèctrica i Automàtica, 2011, Universitat Rovira i Virgili
URL: http://hdl.handle.net/10803/38883
► La reducción de la tecnología MOSFET planar ha sido la opción tecnológica dominante en las últimas décadas. Sin embargo, hemos llegado a un punto en…
(more)
▼ La reducción de la tecnología MOSFET planar ha sido la opción tecnológica dominante en las últimas décadas. Sin embargo, hemos llegado a un punto en el que los materiales y problemas en los dispositivos surgen, abriendo la puerta para estructuras alternativas de los dispositivos. Entre estas estructuras se encuentran los dispositivos DG, SGT y Triple-Gate. Estas tres estructuras están estudiadas en esta tesis, en el contexto de rducir las dimensiones de los dispositivos a tamaños tales que los mecanismos cuánticos y efectos de calan coro deben tenerse n cuenta. Estos efectos vienen con una seria de desafíos desde el pun to de vista de modelación, unos de los más grandes siendo el tiempo y los recursos comprometidos para ejecutar las simulaciones. para resolver este problema, esta tesis propone modelos comlets analíticos y compactos para cada una de las geometrías, validos desde DC hasta el modo de operación en
Rf para los nodos tecnológicos futuros. Dichos modelos se han extendido para analizar el ruido de alta frecuencia en estos diapositivos.
Advisors/Committee Members: [email protected] (authoremail), true (authoremailshow), Lázaro, Antonio (Lázaro Guillén) (director), true (authorsendemail).
Subjects/Keywords: Multiple-Gate MOSFET; Noise; RF; Compact modeling; 53; 621
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Nae, B. M. (2011). Compact modeling of the rf and noise behavior of multiple-gate mosfets. (Thesis). Universitat Rovira i Virgili. Retrieved from http://hdl.handle.net/10803/38883
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Nae, Bogdan Mihai. “Compact modeling of the rf and noise behavior of multiple-gate mosfets.” 2011. Thesis, Universitat Rovira i Virgili. Accessed March 07, 2021.
http://hdl.handle.net/10803/38883.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Nae, Bogdan Mihai. “Compact modeling of the rf and noise behavior of multiple-gate mosfets.” 2011. Web. 07 Mar 2021.
Vancouver:
Nae BM. Compact modeling of the rf and noise behavior of multiple-gate mosfets. [Internet] [Thesis]. Universitat Rovira i Virgili; 2011. [cited 2021 Mar 07].
Available from: http://hdl.handle.net/10803/38883.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Nae BM. Compact modeling of the rf and noise behavior of multiple-gate mosfets. [Thesis]. Universitat Rovira i Virgili; 2011. Available from: http://hdl.handle.net/10803/38883
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Université de Grenoble
4.
Romanescu, Sorin.
Modèle compact paramétrable du SCR pour applications ESD et RF : Scalable compact SCR model for ESD&RF applications.
Degree: Docteur es, Sciences et technologie industrielles, 2011, Université de Grenoble
URL: http://www.theses.fr/2011GRENT055
► La protection contre les décharges électrostatiques (ESD) est un fait necessaire dans chaque circuit intégré. Elle se fait par le déploiement sur la puce d'un…
(more)
▼ La protection contre les décharges électrostatiques (ESD) est un fait necessaire dans chaque circuit intégré. Elle se fait par le déploiement sur la puce d'un réseau de dispositifs spéciaux, à côtés des éléments fonctionnels. La demande pour des améliorations en continu dans la conception et la simulation de l'ESD apporte le besoin de modèles nouveaux et plus précises. La SCR (« Silicon Controlled Rectifier ») est l'un des dispositifs les plus efficaces de protection contre l'ESD. Un nouveau modèle électrique, qui peut être utilisé pour évaluer les structures de protection complexe dont il fait partie, a été développé au cours de cette thèse. Construit avec une forte relation entre les phénomènes physiques et ses équations, il a été parametrisé geometriquement, offrant la possibilité d'adapter et d'optimiser le dispositif selon le niveau de protection nécessaire. Par ailleurs, une étude à haute fréquence sur le SCR et la diode de protection ESD a été réalisé, conduisant à un modèle capable de prédire l'impact de ces dispositifs ont sur le circuit protégé.
Electrostatic discharge (ESD) protection is a must in every integrated circuit. It is done by deploying a network of special devices on-chip, alongside the functional elements. The demand for continuously improvements in ESD design and simulations brings the need of new and more accurate scalable models. The SCR (silicon controlled rectifier) is one of the most efficient ESD protection devices. A new electrical model, that can be used to evaluate the complex protection structures of which it is part of, was developed during this thesis. Built with a strong relation between the physical phenomena and its equations, it was rendered scalable, offering the possibility of tailoring and optimizing the device according to the needed protection level. Moreover, a high-frequency study on the SCR and the ESD protection diode was carried out, leading to a model able to predict the impact these devices have on the protected circuit.
Advisors/Committee Members: Ferrari, Philippe (thesis director), Arnould, Jean-Daniel (thesis director).
Subjects/Keywords: Decharge electrostatique; Modele; Caracterisation; Electrostatic discharge; Device; Modeling; RF; Characterization
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Romanescu, S. (2011). Modèle compact paramétrable du SCR pour applications ESD et RF : Scalable compact SCR model for ESD&RF applications. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENT055
Chicago Manual of Style (16th Edition):
Romanescu, Sorin. “Modèle compact paramétrable du SCR pour applications ESD et RF : Scalable compact SCR model for ESD&RF applications.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed March 07, 2021.
http://www.theses.fr/2011GRENT055.
MLA Handbook (7th Edition):
Romanescu, Sorin. “Modèle compact paramétrable du SCR pour applications ESD et RF : Scalable compact SCR model for ESD&RF applications.” 2011. Web. 07 Mar 2021.
Vancouver:
Romanescu S. Modèle compact paramétrable du SCR pour applications ESD et RF : Scalable compact SCR model for ESD&RF applications. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2021 Mar 07].
Available from: http://www.theses.fr/2011GRENT055.
Council of Science Editors:
Romanescu S. Modèle compact paramétrable du SCR pour applications ESD et RF : Scalable compact SCR model for ESD&RF applications. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENT055

University of Kansas
5.
McCormick, Patrick Michael.
Design and Optimization of Physical Waveform-Diverse and Spatially-Diverse Radar Emissions.
Degree: PhD, Electrical Engineering & Computer Science, 2018, University of Kansas
URL: http://hdl.handle.net/1808/27596
► With the advancement of arbitrary waveform generation techniques, new radar transmission modes can be designed via precise control of the waveform's time-domain signal structure. The…
(more)
▼ With the advancement of arbitrary waveform generation techniques, new radar transmission modes can be designed via precise control of the waveform's time-domain signal structure. The finer degree of emission control for a waveform (or multiple waveforms via a digital array) presents an opportunity to reduce ambiguities in the estimation of parameters within the radar backscatter. While this freedom opens the door to new emission capabilities, one must still consider the practical attributes for radar waveform design. Constraints such as constant amplitude (to maintain sufficient power efficiency) and continuous phase (for spectral containment) are still considered prerequisites for high-powered radar waveforms. These criteria are also applicable to the design of multiple waveforms emitted from an antenna array in a multiple-input multiple-output (MIMO) mode. In this work, three spatially-diverse radar emission design methods are introduced that provide constant amplitude, spectrally-contained waveforms implemented via a digital array radar (DAR). The first design method, denoted as spatial modulation, designs the radar waveforms via a polyphase-coded frequency-modulated (PCFM) framework to steer the coherent mainbeam of the emission within a pulse. The second design method is an iterative scheme to generate waveforms that achieve a desired wideband and/or widebeam radar emission. However, a wideband and widebeam emission can place a portion of the emitted energy into what is known as the `invisible' space of the array, which is related to the storage of reactive power that can damage a radar transmitter. The proposed design method purposefully avoids this space and a quantity denoted as the Fractional Reactive Power (FRP) is defined to assess the quality of the result. The third design method produces simultaneous radar and communications beams in separate spatial directions while maintaining constant modulus by leveraging the orthogonal complement of the emitted directions. This orthogonal energy defines a trade-space between power efficiency gained from constraining waveforms to be constant amplitude and power efficiency lost by emitting energy in undesired directions. The design of FM waveforms via traditional gradient-based optimization methods is also considered. A waveform model is proposed that is a generalization of the PCFM implementation, denoted as coded-FM (CFM), which defines the phase of the waveform via a summation of weighted, predefined basis functions. Therefore, gradient-based methods can be used to minimize a given cost function with respect to a finite set of optimizable parameters. A generalized integrated sidelobe level (GISL) metric is used as the optimization cost function to minimize the correlation range sidelobes of the radar waveform. System specific waveform optimization is explored by incorporating the linear models of three different loopback configurations into the GISL metric to match the optimized waveforms to the particular systems.
Advisors/Committee Members: Blunt, Shannon D (advisor), Allen, Christopher (cmtemember), Stiles, James (cmtemember), Salandrino, Alessandro (cmtemember), Arnold, Emily (cmtemember).
Subjects/Keywords: Electrical engineering; Hardware modeling; MIMO; Optimization; Radar; RF; Waveform
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
McCormick, P. M. (2018). Design and Optimization of Physical Waveform-Diverse and Spatially-Diverse Radar Emissions. (Doctoral Dissertation). University of Kansas. Retrieved from http://hdl.handle.net/1808/27596
Chicago Manual of Style (16th Edition):
McCormick, Patrick Michael. “Design and Optimization of Physical Waveform-Diverse and Spatially-Diverse Radar Emissions.” 2018. Doctoral Dissertation, University of Kansas. Accessed March 07, 2021.
http://hdl.handle.net/1808/27596.
MLA Handbook (7th Edition):
McCormick, Patrick Michael. “Design and Optimization of Physical Waveform-Diverse and Spatially-Diverse Radar Emissions.” 2018. Web. 07 Mar 2021.
Vancouver:
McCormick PM. Design and Optimization of Physical Waveform-Diverse and Spatially-Diverse Radar Emissions. [Internet] [Doctoral dissertation]. University of Kansas; 2018. [cited 2021 Mar 07].
Available from: http://hdl.handle.net/1808/27596.
Council of Science Editors:
McCormick PM. Design and Optimization of Physical Waveform-Diverse and Spatially-Diverse Radar Emissions. [Doctoral Dissertation]. University of Kansas; 2018. Available from: http://hdl.handle.net/1808/27596

King Abdullah University of Science and Technology
6.
Yang, Shuai.
Additively Manufactured Vanadium Dioxide (VO2) based Radio Frequency Switches and Reconfigurable Components.
Degree: Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division, 2020, King Abdullah University of Science and Technology
URL: http://hdl.handle.net/10754/664510
► In a wireless system, the frequency-reconfigurable RF components are highly desired because one such component can replace multiple RF components to reduce the size, cost,…
(more)
▼ In a wireless system, the frequency-reconfigurable
RF components are highly desired because one such component can replace multiple
RF components to reduce the size, cost, and weight. Typically, the reconfigurable
RF components are realized using capacitive varactors, PIN diodes, or MEMS switches. Most of these
RF switches are expensive, rigid, and need tedious soldering steps, which are not suitable for futuristic flexible and wearable applications. Therefore, there is a need to have a solution for low cost, flexible, and easy to integrate
RF switches.
All the above-mentioned issues can be alleviated if these switches can be simply printed at the place of interest. In this work, we have demonstrated vanadium dioxide (VO2) based
RF switches that have been realized through additive manufacturing technologies (inkjet printing and screen printing), which dramatically brings the cost down to a few cents. Also, no soldering or additional attachment step is required as the switch can be simply printed on the
RF component. The printed VO2 switches are configured in two types (shunt configuration and series configuration) where both types have been characterized with two activation mechanisms (thermal activation and electrical activation) up to 40 GHz. The measured insertion loss of 1-3 dB, isolation of 20-30 dB, and
switching speed of 400 ns are comparable to other non-printed and expensive
RF switches.
As an application for the printed VO2 switches, a fully printed frequency reconfigurable filter has also been designed in this work. An open-ended dual-mode resonator with meandered loadings has been co-designed with the VO2 switches, resulting in a compact filter with decent insertion loss of 2.6 dB at both switchable frequency bands (4 GHz and 3.75 GHz). Moreover, the filter is flexible and highly immune to the bending effect, which is essential for wearable applications.
Finally, a multi-parameter (switch thickness, width, length, temperature) model has been established using a customized artificial neural network (ANN) to achieve a faster simulation speed. The optimized model’s average error and correlation coefficient are only 0.0003 and 0.9905, respectively, which both indicate the model’s high accuracy.
Advisors/Committee Members: Shamim, Atif (advisor), Fariborzi, Hossein (committee member), Anthopoulos, Thomas D. (committee member), Tentzeris, Manos M. (committee member).
Subjects/Keywords: Vanadium Dioxide; RF Switch; Reconfigurable Filter; Modeling; Fully Printed Electronics
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Yang, S. (2020). Additively Manufactured Vanadium Dioxide (VO2) based Radio Frequency Switches and Reconfigurable Components. (Thesis). King Abdullah University of Science and Technology. Retrieved from http://hdl.handle.net/10754/664510
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Yang, Shuai. “Additively Manufactured Vanadium Dioxide (VO2) based Radio Frequency Switches and Reconfigurable Components.” 2020. Thesis, King Abdullah University of Science and Technology. Accessed March 07, 2021.
http://hdl.handle.net/10754/664510.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Yang, Shuai. “Additively Manufactured Vanadium Dioxide (VO2) based Radio Frequency Switches and Reconfigurable Components.” 2020. Web. 07 Mar 2021.
Vancouver:
Yang S. Additively Manufactured Vanadium Dioxide (VO2) based Radio Frequency Switches and Reconfigurable Components. [Internet] [Thesis]. King Abdullah University of Science and Technology; 2020. [cited 2021 Mar 07].
Available from: http://hdl.handle.net/10754/664510.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Yang S. Additively Manufactured Vanadium Dioxide (VO2) based Radio Frequency Switches and Reconfigurable Components. [Thesis]. King Abdullah University of Science and Technology; 2020. Available from: http://hdl.handle.net/10754/664510
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Université Paris-Sud – Paris XI
7.
Vinatier, Thomas.
Influence des paramètres du laser sur la dynamique des paquets courts d’électrons relativistes dans des accélérateurs linéaires basés sur des canons RF et développement de diagnostics associés : Influence of laser parameters on the relativistic short electron bunches dynamics in linear accelerators based on RF-guns and development of associated diagnostics.
Degree: Docteur es, Physique, 2015, Université Paris-Sud – Paris XI
URL: http://www.theses.fr/2015PA112195
► Dans de nombreuses applications, des paquets d’électrons relativistes sub-ps sont requis : Accélération laser-plasma, Lasers à électrons libres, Génération de rayonnement THz intense, Etude des…
(more)
▼ Dans de nombreuses applications, des paquets d’électrons relativistes sub-ps sont requis : Accélération laser-plasma, Lasers à électrons libres, Génération de rayonnement THz intense, Etude des phénomènes ultra-rapides dans la matière… L’aspect court des paquets et la nécessité d’un fort courant crête pour les applications impliquent de fortes forces de charge d’espace conduisant à une dégradation des propriétés du faisceau, telle que son émittance transverse et sa longueur. La principale difficulté est de caractériser, modéliser et prendre en compte ces effets. Ma thèse s’inscrit dans ce cadre à travers l’étude de la dynamique et des diagnostics associés à ces paquets courts. Le chapitre 2 rassemble des mesures de plusieurs propriétés du faisceau : charge, émittance transverse et longueur. L’originalité de mon travail réside dans l’utilisation de méthodes simples, des points de vues théoriques et technologiques. Ces méthodes, plus adaptées pour des faisceaux moins extrêmes, permettent néanmoins d’obtenir de très bons résultats. J’ai en particulier développé une méthode de mesure de charge à partir de la mesure de l’intensité lumineuse émise par un écran scintillant suite à l’interaction avec le faisceau. Cette méthode permet de mesurer précisément des charges inférieures à 100 fC, ce qui surpasse les capacités des diagnostics classiques (ICT et Coupe de Faraday) limités au picocoulomb à cause du bruit électronique. Cette méthode est utile, du fait que les paquets courts sont souvent faiblement chargés pour limiter l’effet des forces de charge d’espace. J’ai aussi adapté des méthodes multiparamétriques pour mesurer l’émittance transverse et la longueur des paquets d’électrons. Ces méthodes indirectes permettent de déterminer ces propriétés à partir de la mesure d’autres propriétés plus accessibles : les dimensions transverses pour l’émittance et la dispersion en énergie pour la longueur. La mesure de longueur (méthode des 3 phases) donne de très bons résultats, puisqu’elle permet de mesurer avec une précision meilleure que 10% des longueurs rms inférieures à la picoseconde. La mesure d’émittance sans prise en compte des forces de charge d’espace donne des résultats mitigés, puisque la précision varie de 20% (méthode des 3 gradients) à plus de 100% (méthode des 3 écrans). Une amélioration significative de la précision, jusqu’à un facteur 5, peut être obtenue en prenant en compte les forces de charge d’espace via une équation d’enveloppe, ce qui constitue l’originalité de mon travail. Le chapitre 3 consiste en une comparaison des propriétés des paquets courts d’électrons, unique ou longitudinalement modulé, générés par trois méthodes différentes : Utilisation d’une impulsion laser courte ou longitudinalement modulée dans un canon
RF ; Compression magnétique dans une chicane ; Compression
RF dans une structure accélératrice (Velocity Bunching). J’ai en particulier montré que, à charge égale, la génération de paquets courts via une impulsion laser courte dans un canon
RF est désavantageuse, des points de vue de la…
Advisors/Committee Members: Puzo, Patrick (thesis director).
Subjects/Keywords: Canons RF; Diagnostics; Dynamique faisceau; Modélisation analytique; Mise en forme du laser; RF-guns; Diagnostics; Beam dynamics; Analytical modeling; Laser shaping
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Vinatier, T. (2015). Influence des paramètres du laser sur la dynamique des paquets courts d’électrons relativistes dans des accélérateurs linéaires basés sur des canons RF et développement de diagnostics associés : Influence of laser parameters on the relativistic short electron bunches dynamics in linear accelerators based on RF-guns and development of associated diagnostics. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2015PA112195
Chicago Manual of Style (16th Edition):
Vinatier, Thomas. “Influence des paramètres du laser sur la dynamique des paquets courts d’électrons relativistes dans des accélérateurs linéaires basés sur des canons RF et développement de diagnostics associés : Influence of laser parameters on the relativistic short electron bunches dynamics in linear accelerators based on RF-guns and development of associated diagnostics.” 2015. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed March 07, 2021.
http://www.theses.fr/2015PA112195.
MLA Handbook (7th Edition):
Vinatier, Thomas. “Influence des paramètres du laser sur la dynamique des paquets courts d’électrons relativistes dans des accélérateurs linéaires basés sur des canons RF et développement de diagnostics associés : Influence of laser parameters on the relativistic short electron bunches dynamics in linear accelerators based on RF-guns and development of associated diagnostics.” 2015. Web. 07 Mar 2021.
Vancouver:
Vinatier T. Influence des paramètres du laser sur la dynamique des paquets courts d’électrons relativistes dans des accélérateurs linéaires basés sur des canons RF et développement de diagnostics associés : Influence of laser parameters on the relativistic short electron bunches dynamics in linear accelerators based on RF-guns and development of associated diagnostics. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2015. [cited 2021 Mar 07].
Available from: http://www.theses.fr/2015PA112195.
Council of Science Editors:
Vinatier T. Influence des paramètres du laser sur la dynamique des paquets courts d’électrons relativistes dans des accélérateurs linéaires basés sur des canons RF et développement de diagnostics associés : Influence of laser parameters on the relativistic short electron bunches dynamics in linear accelerators based on RF-guns and development of associated diagnostics. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2015. Available from: http://www.theses.fr/2015PA112195
8.
Allanic, Rozenn.
Modélisation et conception de dispositifs accordables sur substrat semi-conducteur : étude d'une nouvelle démarche de co-conception : Modelling and co-design of tunable devices on a semiconductor substrate : study of a new co-design approach.
Degree: Docteur es, Electronique, 2015, Brest
URL: http://www.theses.fr/2015BRES0075
► Compte tenu de la multiplication des standards dans le domaine des télécommunications,l’accordabilité au sein des systèmes est devenue une priorité en termes d’intégration et de…
(more)
▼ Compte tenu de la multiplication des standards dans le domaine des télécommunications,l’accordabilité au sein des systèmes est devenue une priorité en termes d’intégration et de coût.Un seul circuit accordable doit ainsi permettre d’adresser plusieurs normes. Dans la gamme deshyperfréquences, en technologie planaire, la fonction accordable (filtre ou antenne) estactuellement un dispositif passif distribué sur lequel sont reportés un ou plusieurs élémentsd’accords. Il est ainsi possible de faire varier au moins une des caractéristiques du dispositif(fréquence centrale et/ou bande passante pour les filtres et fréquence de résonance, diagrammede rayonnement ou mode de polarisation pour les antennes). Le circuit passif étant distribué, pourassurer la propagation de l’onde, un matériau diélectrique faible pertes est généralement utilisé.Cependant, l’ajout d’éléments d’accord engendre des pertes et des perturbations liées au report ducomposant (éléments parasites au niveau de l’interconnexion et des discontinuités composantd’accord-dispositif passif, et de la mise en boitier du composant reporté). Enfin, cette manière deréaliser des fonctions accordables rend peu flexible la conception (dimensions et localisation ducomposant d’accord) et la fabrication (perçage et métallisation pour les vias).Dans ce contexte, nous proposons de co-concevoir des fonctions hyperfréquences accordablessur un substrat semi-conducteur sur lequel il est à la fois possible de réaliser le composantd’accord et le dispositif passif distribué. Cette co-conception du circuit passif et de son élémentd’accord permet d’éliminer toutes les contraintes liées au report de composant, au perçage de viamétallique et apporte une grande flexibilité au niveau du dimensionnement de la zone dopée. Eneffet, elles peuvent être soit localisées soit distribuées. Toutefois, ce concept nécessite que lesupport semi-conducteur soit à la fois compatible à la propagation de l’onde et à la réalisation del’élément d’accord. Ces travaux de thèse ont permis de lever ce verrou en proposant descompromis permettant la réalisation de composants accordables validés par des démonstrateurssur technologie silicium.Au cours de ces travaux, une ligne de transmission micro-ruban et un composant d’accord de typeswitch ont été co-conçus. De très bonnes performances, validées par la mesure, ont été obtenues.De plus, une démarche de co-simulation a été proposée pour prendre en compte les effets semiconducteursdans la simulation électromagnétique.Le concept ayant été validé, il a été ensuite appliqué à des dispositifs accordables relativementsimples afin de montrer le potentiel de cette démarche (en termes de performances et de flexibilitéde conception), tels que des filtres accordables, des guides d’ondes de type SIW (SubstrateIntegrated Waveguide) reconfigurables ou encore des antennes accordables en fréquence. Cestravaux font également apparaître de nombreuses perspectives pour la réalisation de nouvellestopologies de filtres accordables (filtres SIW, interdigités…), d’antennes accordables…
Advisors/Committee Members: Quendo, Cédric (thesis director).
Subjects/Keywords: Accordabilité; Filtres; Antennes; Semi-conducteurs; Modélisation; Technologie Silicium; Switchs RF; Tunability; Filters; Antennas; Semiconductors; Modeling; Silicon Technology; RF Switches; 621.381
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Allanic, R. (2015). Modélisation et conception de dispositifs accordables sur substrat semi-conducteur : étude d'une nouvelle démarche de co-conception : Modelling and co-design of tunable devices on a semiconductor substrate : study of a new co-design approach. (Doctoral Dissertation). Brest. Retrieved from http://www.theses.fr/2015BRES0075
Chicago Manual of Style (16th Edition):
Allanic, Rozenn. “Modélisation et conception de dispositifs accordables sur substrat semi-conducteur : étude d'une nouvelle démarche de co-conception : Modelling and co-design of tunable devices on a semiconductor substrate : study of a new co-design approach.” 2015. Doctoral Dissertation, Brest. Accessed March 07, 2021.
http://www.theses.fr/2015BRES0075.
MLA Handbook (7th Edition):
Allanic, Rozenn. “Modélisation et conception de dispositifs accordables sur substrat semi-conducteur : étude d'une nouvelle démarche de co-conception : Modelling and co-design of tunable devices on a semiconductor substrate : study of a new co-design approach.” 2015. Web. 07 Mar 2021.
Vancouver:
Allanic R. Modélisation et conception de dispositifs accordables sur substrat semi-conducteur : étude d'une nouvelle démarche de co-conception : Modelling and co-design of tunable devices on a semiconductor substrate : study of a new co-design approach. [Internet] [Doctoral dissertation]. Brest; 2015. [cited 2021 Mar 07].
Available from: http://www.theses.fr/2015BRES0075.
Council of Science Editors:
Allanic R. Modélisation et conception de dispositifs accordables sur substrat semi-conducteur : étude d'une nouvelle démarche de co-conception : Modelling and co-design of tunable devices on a semiconductor substrate : study of a new co-design approach. [Doctoral Dissertation]. Brest; 2015. Available from: http://www.theses.fr/2015BRES0075

University of Michigan
9.
Lee, Seungku.
Design and Modeling of Ferroelectric BST FBARs for Switchable RF Bulk Acoustic Wave Filters.
Degree: PhD, Electrical Engineering, 2016, University of Michigan
URL: http://hdl.handle.net/2027.42/133215
► Multi-standard smartphones have become ubiquitous in everyday life. Such systems operate under different communication standards (2G, 3G, 4G-LTE, WLAN, GPS, Bluetooth, etc.) at different frequencies.…
(more)
▼ Multi-standard smartphones have become ubiquitous in everyday life. Such systems operate under different communication standards (2G, 3G, 4G-LTE, WLAN, GPS, Bluetooth, etc.) at different frequencies. Compact and high-performance filters are indispensable for
RF front-ends in mobile phones, and
RF bulk acoustic wave (BAW) filters, based on piezoelectric film bulk acoustic resonators (FBARs), have become prevalent. Moreover, due to the upcoming Internet of Things (IoT) and 5G, the demand for new technologies that can be employed to design switchable/tunable filters has increased.
This dissertation presents one of the new promising technologies, known as intrinsically-switchable BAW filters employing newly-investigated electrostrictive effect in BST thin films. Successful implementation of switchable filters would eliminate/minimize external switches in the design of filter banks, thus leading to significant reduction in their size, cost, and complexity.
Contributions of this work are categorized into three major parts. First, the nonlinear circuit
modeling procedure for BST FBARs is presented. The nonlinear circuit model, essential for the material characterization and device characterization including linearity analysis, is developed based on the physics of electrostriction-based intrinsically switchable FBARs.
Modeling results are in close agreement with dc-bias-voltage and
RF-power-level dependent measurement results for BST FBARs.
Second, the design methods for BST-on-Si composite FBARs are presented. The designed composite FBAR shows a record Q of 970 at 2.5 GHz among switchable BST resonators. Temperature-dependent characteristics of BST-on-Si composite FBAR devices are also presented with the measured TCF of -35 ppm/K. Furthermore, a raised-frame technique, which has been used to eliminate lateral-wave spurious-modes in piezoelectric BAW resonators, is first employed for switchable ferroelectric FBARs, demonstrating the effectiveness of the frame technique.
Finally, the design method for intrinsically switchable BST FBAR filters is presented. The filter design method for ladder-type BAW filters is developed based on image parameters. Closed-form equations are derived for the first time enabling one to accurately design BAW filters. A systematically-designed pi-type BST FBAR filter is fabricated and measured, exhibiting a 1.22% bandwidth at 1.97 GHz with an isolation of greater than 22 dB, having a very small device size of 0.021 mm2.
Advisors/Committee Members: Mortazawi, Amir (committee member), Lynch, Jerome P (committee member), Sarabandi, Kamal (committee member), Grbic, Anthony (committee member).
Subjects/Keywords: BAW filters; BST; FBAR filters; Electrostriction; Nonlinear modeling; RF filters; Electrical Engineering; Engineering
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Lee, S. (2016). Design and Modeling of Ferroelectric BST FBARs for Switchable RF Bulk Acoustic Wave Filters. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/133215
Chicago Manual of Style (16th Edition):
Lee, Seungku. “Design and Modeling of Ferroelectric BST FBARs for Switchable RF Bulk Acoustic Wave Filters.” 2016. Doctoral Dissertation, University of Michigan. Accessed March 07, 2021.
http://hdl.handle.net/2027.42/133215.
MLA Handbook (7th Edition):
Lee, Seungku. “Design and Modeling of Ferroelectric BST FBARs for Switchable RF Bulk Acoustic Wave Filters.” 2016. Web. 07 Mar 2021.
Vancouver:
Lee S. Design and Modeling of Ferroelectric BST FBARs for Switchable RF Bulk Acoustic Wave Filters. [Internet] [Doctoral dissertation]. University of Michigan; 2016. [cited 2021 Mar 07].
Available from: http://hdl.handle.net/2027.42/133215.
Council of Science Editors:
Lee S. Design and Modeling of Ferroelectric BST FBARs for Switchable RF Bulk Acoustic Wave Filters. [Doctoral Dissertation]. University of Michigan; 2016. Available from: http://hdl.handle.net/2027.42/133215

University of Texas – Austin
10.
Parrish, Kristen Nguyen.
Nanoscale graphene for RF circuits and systems.
Degree: PhD, Electrical and Computer Engineering, 2013, University of Texas – Austin
URL: http://hdl.handle.net/2152/21248
► Increased challenges in CMOS scaling have motivated the development of alternatives to silicon circuit technologies, including graphene transistor development. In this work, we present a…
(more)
▼ Increased challenges in CMOS scaling have motivated the development of alternatives to silicon circuit technologies, including graphene transistor development. In this work, we present a circuit simulator model for graphene FETs, developed to both fit measured data and predict new behaviors, motivating future research. The model is implemented in Agilent ADS, a circuit level simulator that is commonly used for non-standard transistor technologies, for use with parameter variation analyses, as well as easy integration with CMOS design kits. We present conclusions drawn from the model, including analyses on the effects of contact resistance and oxide scaling. We have also derived a quantum-capacitance limited model, used to intuit intrinsic behaviors of graphene transistors, as well as outline upper bounds on performance. Additionally, the ideal frequency doubler has been examined and compared with graphene, and performance limits for graphene frequency multipliers are elucidated. Performance as a demodulator is also discussed.
We leverage this advancement in
modeling research to advance circuit- and system-level research using graphene transistor technology. We first explore the development of a GHz planar carbon antenna for use on an
RF frontend. This research is further developed in work towards the first standalone carbon radio on flexible plastics. A front end receiver, comprised of an integrated carbon antenna, transmission lines, and a graphene transistor for demodulation, are all fabricated onto one plastic substrate, to be interfaced with speakers for a full radio demo. This complete system will motivate further research on graphene-on-plastic systems.
Advisors/Committee Members: Akinwande, Deji (advisor).
Subjects/Keywords: Graphene; Graphite; Carbon; Transistor; RF; Circuit; Compact modeling; Model; Demodulator; Doubler; Radio; Flexible; Plastic; Nanoelectronics
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Parrish, K. N. (2013). Nanoscale graphene for RF circuits and systems. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/21248
Chicago Manual of Style (16th Edition):
Parrish, Kristen Nguyen. “Nanoscale graphene for RF circuits and systems.” 2013. Doctoral Dissertation, University of Texas – Austin. Accessed March 07, 2021.
http://hdl.handle.net/2152/21248.
MLA Handbook (7th Edition):
Parrish, Kristen Nguyen. “Nanoscale graphene for RF circuits and systems.” 2013. Web. 07 Mar 2021.
Vancouver:
Parrish KN. Nanoscale graphene for RF circuits and systems. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2013. [cited 2021 Mar 07].
Available from: http://hdl.handle.net/2152/21248.
Council of Science Editors:
Parrish KN. Nanoscale graphene for RF circuits and systems. [Doctoral Dissertation]. University of Texas – Austin; 2013. Available from: http://hdl.handle.net/2152/21248
11.
Cerasani, Umberto.
Modélisation et optimisation d'un émetteur-récepteur faible bruit pour implants cochléaires : Modeling and optimization of a low noise transceiver for cochlear implants application.
Degree: Docteur es, Électronique, 2014, Nice
URL: http://www.theses.fr/2014NICE4093
► Les implants cochléaires permettent aux personnes atteintes de surdité profonde de percevoir des sons. La modélisation comportementale de la partie externe de l’implant a été…
(more)
▼ Les implants cochléaires permettent aux personnes atteintes de surdité profonde de percevoir des sons. La modélisation comportementale de la partie externe de l’implant a été réalisée avec le logiciel Matlab. L’étude du canal de transmission et sa modélisation utilisant des modèles électriques de tissus biologiques a été ensuite effectuée ainsi que l’étude du niveau de bruit introduit par le canal. Deux types de modulations différentes sont réalisés à l’émission chacune nécessitant un oscillateur. L’étude théorique et la création d’un nouveau modèle afin d’évaluer le bruit de phase ont été proposés. L’extraction du jitter à partir du bruit de phase et son impact sur la chaine de réception complète a été estimée. La compréhension précise et la modélisation des différentes parties de l’oreille humaine qui conduisent à la stimulation des terminaisons nerveuses sont décrites. Par la suite nous avons développé un nouveau modèle mécanique de l’organe de Corti et du déplacement des stéréociles, que nous avons validé à l’aide de données provenant d’expériences physiques. La modélisation mathématique de la synapse entre les cellules ciliées et les fibres nerveuses a été réalisée, afin d’obtenir le stimulus électrique relatif à un son perçu quelconque. De plus un nouveau modèle analogique décrivant la propagation de l’information nerveuse a été développé. En se basant sur la spectroscopie d’impédance électrochimique des tissus biologiques, nous avons créé un modèle électrique du fil d’électrodes inséré dans la cochlée.
Cochlear implants are used by severely deaf people for partial hearing sensation. Behavioral modeling of the external part of the cochlear implant was first performed using the software Matlab. Then the propagation channel was modeled using electrical analogy of the biological tissues. Noise extraction of the propagation channel was performed in order to obtain the specifications for the RF receiver. Two types of diverse modulations are performed in the transmitter each one requiring an oscillator. The theoretical study and the creation of a new model allowing phase noise estimation is also proposed in this document. Jitter estimation from phase noise was performed and significantly impacted the overall chain transmission, suggesting oscillators blocks optimization. The accurate heterogeneous modeling of the various part of the internal ear leading to auditory nerve excitation was developed. Then a new mechanical equivalent of the organ of Corti and stereocilia displacement was developed and confirmed by physical experiments. The synapse between the hair cells and nerve fibers was mathematically modeled, in order to obtain the electrical stimulus of the auditory nerve associated with a random sound stimulus. Furthermore a new analog model of the nerve fiber information propagation was realized in order to obtain a realistic electrical analogy with nerve fiber depolarization propagation. Based on impedance spectroscopy biological tissue characterization, we proposed a new electrical analogy of the system…
Advisors/Committee Members: Tatinian, William (thesis director), Jacquemod, Gilles (thesis director).
Subjects/Keywords: Implants cochléaires; Oreille interne; Transmission nerveuse; Modélisation mathématique; Modélisation hétérogène; Récepteur RF; Cochlear Implants; Internal ear; Nerve transmission; Mathematical and electrical modeling; Heterogeneous system; RF receiver
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Cerasani, U. (2014). Modélisation et optimisation d'un émetteur-récepteur faible bruit pour implants cochléaires : Modeling and optimization of a low noise transceiver for cochlear implants application. (Doctoral Dissertation). Nice. Retrieved from http://www.theses.fr/2014NICE4093
Chicago Manual of Style (16th Edition):
Cerasani, Umberto. “Modélisation et optimisation d'un émetteur-récepteur faible bruit pour implants cochléaires : Modeling and optimization of a low noise transceiver for cochlear implants application.” 2014. Doctoral Dissertation, Nice. Accessed March 07, 2021.
http://www.theses.fr/2014NICE4093.
MLA Handbook (7th Edition):
Cerasani, Umberto. “Modélisation et optimisation d'un émetteur-récepteur faible bruit pour implants cochléaires : Modeling and optimization of a low noise transceiver for cochlear implants application.” 2014. Web. 07 Mar 2021.
Vancouver:
Cerasani U. Modélisation et optimisation d'un émetteur-récepteur faible bruit pour implants cochléaires : Modeling and optimization of a low noise transceiver for cochlear implants application. [Internet] [Doctoral dissertation]. Nice; 2014. [cited 2021 Mar 07].
Available from: http://www.theses.fr/2014NICE4093.
Council of Science Editors:
Cerasani U. Modélisation et optimisation d'un émetteur-récepteur faible bruit pour implants cochléaires : Modeling and optimization of a low noise transceiver for cochlear implants application. [Doctoral Dissertation]. Nice; 2014. Available from: http://www.theses.fr/2014NICE4093

Université de Grenoble
12.
Ighilahriz, Salim.
Caractérisation et modélisation de la fiabilité des transistors et circuits millimétriques conçus en technologies BiCMOS et CMOS : Reliability characterization and modeling of transistors and millimetric waves circuits designed in BiCMOS and CMOS technologies.
Degree: Docteur es, Nanoélectronique et nanotechnologie, 2014, Université de Grenoble
URL: http://www.theses.fr/2014GRENT016
► De nos jours, l'industrie de la microélectronique développe des nouvelles technologies qui permettent l'obtention d'applications du quotidien alliant rapidité, basse consommation et hautes performances. Pour…
(more)
▼ De nos jours, l'industrie de la microélectronique développe des nouvelles technologies qui permettent l'obtention d'applications du quotidien alliant rapidité, basse consommation et hautes performances. Pour cela, le transistor, composant actif élémentaire et indispensable de l'électronique, voit ses dimensions miniaturisées à un rythme effréné suivant la loi de Moore de 1965. Cette réduction de dimensions permet l'implémentation de plusieurs milliards de transistors sur des surfaces de quelques millimètres carrés augmentant ainsi la densité d'intégration. Ceci conduit à une production à des coûts de fabrication constants et offre des possibilités d'achats de produits performants à un grand nombre de consommateurs. Le MOSFET (Metal Oxide Semiconductor Field Effect Transistor), transistor à effet de champ, aussi appelé MOS, représente le transistor le plus utilisé dans les différents circuits issus des industries de la microélectronique. Ce transistor possède des longueurs électriques de 14 nm pour les technologies industrialisables les plus avancées et permet une densité intégration maximale spécialement pour les circuits numériques tels que les microprocesseurs. Le transistor bipolaire, dédié aux applications analogiques, fut inventé avant le transistor MOS. Cependant, son développement correspond à des noeuds technologiques de génération inférieure par rapport à celle des transistors MOS. En effet, les dimensions caractéristiques des noeuds technologiques les plus avancés pour les technologies BiCMOS sont de 55 nm. Ce type de transistor permet la mise en oeuvre de circuits nécessitant de très hautes fréquences d'opération, principalement dans le secteur des télécommunications, tels que les radars anticollisions automobiles fonctionnant à 77 GHz. Chacun de ces types de transistors possède ses propres avantages et inconvénients. Les avantages du transistor MOS reposent principalement en deux points qui sont sa capacité d'intégration et sa faible consommation lorsqu'il est utilisé pour réaliser des circuits logiques. Sachant que ces deux types de transistors sont, de nos jours, comparables du point de vue miniaturisation, les avantages offerts par le transistor bipolaire diffèrent de ceux du transistor MOS. En effet, le transistor bipolaire supporte des niveaux de courants plus élevés que celui d'un transistor MOS ce qui lui confère une meilleure capacité d'amplification de puissance. De plus, le transistor bipolaire possède une meilleure tenue en tension et surtout possède des niveaux de bruit électronique beaucoup plus faibles que ceux des transistors MOS. Ces différences notables entre les deux types de transistors guideront le choix des concepteurs suivant les spécifications des clients. L'étude qui suit concerne la fiabilité de ces deux types de transistors ainsi que celle de circuits pour les applications radio fréquences (
RF) et aux longueurs d'ondes millimétriques (mmW) pour lesquels ils sont destinés. Il existe dans la littérature de nombreuses études de la fiabilité des transistors MOS. Concernant les…
Advisors/Committee Members: Benech, Philippe (thesis director), Fournier, Jean-Michel (thesis director).
Subjects/Keywords: Transistors bipolaires à hétérojonctions et MOS; Fiabilité; Caractérisation; Modélisation; Circuits; RF et millimétrique; Heterojunction bipolar and MOS transistors; Reliability; Characterization; Modeling; Circuits; RF & mmW; 620
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Ighilahriz, S. (2014). Caractérisation et modélisation de la fiabilité des transistors et circuits millimétriques conçus en technologies BiCMOS et CMOS : Reliability characterization and modeling of transistors and millimetric waves circuits designed in BiCMOS and CMOS technologies. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2014GRENT016
Chicago Manual of Style (16th Edition):
Ighilahriz, Salim. “Caractérisation et modélisation de la fiabilité des transistors et circuits millimétriques conçus en technologies BiCMOS et CMOS : Reliability characterization and modeling of transistors and millimetric waves circuits designed in BiCMOS and CMOS technologies.” 2014. Doctoral Dissertation, Université de Grenoble. Accessed March 07, 2021.
http://www.theses.fr/2014GRENT016.
MLA Handbook (7th Edition):
Ighilahriz, Salim. “Caractérisation et modélisation de la fiabilité des transistors et circuits millimétriques conçus en technologies BiCMOS et CMOS : Reliability characterization and modeling of transistors and millimetric waves circuits designed in BiCMOS and CMOS technologies.” 2014. Web. 07 Mar 2021.
Vancouver:
Ighilahriz S. Caractérisation et modélisation de la fiabilité des transistors et circuits millimétriques conçus en technologies BiCMOS et CMOS : Reliability characterization and modeling of transistors and millimetric waves circuits designed in BiCMOS and CMOS technologies. [Internet] [Doctoral dissertation]. Université de Grenoble; 2014. [cited 2021 Mar 07].
Available from: http://www.theses.fr/2014GRENT016.
Council of Science Editors:
Ighilahriz S. Caractérisation et modélisation de la fiabilité des transistors et circuits millimétriques conçus en technologies BiCMOS et CMOS : Reliability characterization and modeling of transistors and millimetric waves circuits designed in BiCMOS and CMOS technologies. [Doctoral Dissertation]. Université de Grenoble; 2014. Available from: http://www.theses.fr/2014GRENT016
13.
MAHALINGAM UMASHANKAR.
Characterization and modeling of MOSFETS for RF applications.
Degree: 2006, National University of Singapore
URL: http://scholarbank.nus.edu.sg/handle/10635/15426
Subjects/Keywords: MOSFET; three-port; RF characterization; RF modeling; capacitance; terminal charge
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
UMASHANKAR, M. (2006). Characterization and modeling of MOSFETS for RF applications. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/15426
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
UMASHANKAR, MAHALINGAM. “Characterization and modeling of MOSFETS for RF applications.” 2006. Thesis, National University of Singapore. Accessed March 07, 2021.
http://scholarbank.nus.edu.sg/handle/10635/15426.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
UMASHANKAR, MAHALINGAM. “Characterization and modeling of MOSFETS for RF applications.” 2006. Web. 07 Mar 2021.
Vancouver:
UMASHANKAR M. Characterization and modeling of MOSFETS for RF applications. [Internet] [Thesis]. National University of Singapore; 2006. [cited 2021 Mar 07].
Available from: http://scholarbank.nus.edu.sg/handle/10635/15426.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
UMASHANKAR M. Characterization and modeling of MOSFETS for RF applications. [Thesis]. National University of Singapore; 2006. Available from: http://scholarbank.nus.edu.sg/handle/10635/15426
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
14.
Zerioul, Lounis.
Modélisation comportementale d'un réseau sur puce basé sur des interconnexions RF. : Behavioral modeling of a network on chip based on RF interconnections.
Degree: Docteur es, STIC (sciences et technologies de l'information et de la communication) - Cergy, 2015, Cergy-Pontoise
URL: http://www.theses.fr/2015CERG0776
► Le développement des systèmes multiprocesseurs intégrés sur puce (MPSoC) répond au besoin grandissant des architectures de calcul intensif. En revanche, l'évolution de leurs performances est…
(more)
▼ Le développement des systèmes multiprocesseurs intégrés sur puce (MPSoC) répond au besoin grandissant des architectures de calcul intensif. En revanche, l'évolution de leurs performances est entravée par leurs réseaux de communication sur puce (NoC) à cause de leur consommation d'énergie ainsi que du retard. C'est dans ce contexte que les NoC à base d'interconnexions RF et filaires (RFNoC) ont émergé. Afin de gérer au mieux et d'optimiser la conception d'un RFNoC, il est indispensable de développer une plateforme de simulation intégrant à la fois des circuits analogiques et numériques.Dans un premier temps, la simulation temporelle d'un RFNoC avec des composants dont les modèles sont idéaux est utilisée pour optimiser l'allocation des ressources spectrales disponibles. Le cas échéant, nous proposons des solutions pour améliorer la qualité de signal transmis. Dans un deuxième temps, nous avons développé en VHDL-AMS des modèles comportementaux et précis de chacun des composants du RFNoC. Les modèles de l'amplificateur faible bruit (LNA) et du mélangeur, prennent en compte les paramètres concernant, l'amplification, les non-linéarités, le bruit et la bande passante. Le modèle de l'oscillateur local considère les paramètresconventionnels, notamment le bruit de phase. Quant à la ligne de transmission, un modèle fréquentiel précis, incluant l'effet de peau est adapté pour les simulations temporelles. Ensuite, l'impact des paramètres des composants sur les performances du RFNoC est évalué afin d'anticiper les contraintes qui s'imposeront lors de la conception du RFNoC.
The development of multiprocessor systems integrated on chip (MPSoC) respondsto the growing need for intensive computation systems. However, the evolutionof their performances is hampered by their communication networks on chip(NoC) due to their energy consumption and delay. It is in this context that the wired RF network on chip (RFNoC) was emerged. In order to better manage and optimize the design of an RFNoC, it is necessary to develop a simulation platform adressing both analog and digital circuits.First, a time domaine simulation of an RFNoC with components whose modelsare ideal is used to optimize the allocation of the available spectrum resources. Where appropriate, we provide solutions to improve the quality of transmitted signal. Secondly, we have developed, in VHDL-AMS, behavioral and accurate models of all RFNoC components. The models of the low noise amplifier (LNA) and the mixer take into account the parameters for the amplification, nonlinearities, noise and bandwidth. The model of the local oscillator considers the conventional parameters, including its phase noise. Concerning the transmission line, an accurate frequency model, including the skin effect is adapted for time domaine simulations. Then, the impact of component parameters on RFNoC performances is evaluatedto anticipate constraints of the RFNoC design.
Advisors/Committee Members: Bourdel, Emmanuelle (thesis director), Ariaudo, Myriam (thesis director).
Subjects/Keywords: Noc RF; Réseaux sur puce; Frontal RF; Modelistion en VHDL-AMS; Emetteur/recepteur; Systèmes electroniques hétérogènes; RFNoc; Network on chip; RF front-End; VHDL-AMS modeling; Transmitter/Receiver; Heterogenous electronic system
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Zerioul, L. (2015). Modélisation comportementale d'un réseau sur puce basé sur des interconnexions RF. : Behavioral modeling of a network on chip based on RF interconnections. (Doctoral Dissertation). Cergy-Pontoise. Retrieved from http://www.theses.fr/2015CERG0776
Chicago Manual of Style (16th Edition):
Zerioul, Lounis. “Modélisation comportementale d'un réseau sur puce basé sur des interconnexions RF. : Behavioral modeling of a network on chip based on RF interconnections.” 2015. Doctoral Dissertation, Cergy-Pontoise. Accessed March 07, 2021.
http://www.theses.fr/2015CERG0776.
MLA Handbook (7th Edition):
Zerioul, Lounis. “Modélisation comportementale d'un réseau sur puce basé sur des interconnexions RF. : Behavioral modeling of a network on chip based on RF interconnections.” 2015. Web. 07 Mar 2021.
Vancouver:
Zerioul L. Modélisation comportementale d'un réseau sur puce basé sur des interconnexions RF. : Behavioral modeling of a network on chip based on RF interconnections. [Internet] [Doctoral dissertation]. Cergy-Pontoise; 2015. [cited 2021 Mar 07].
Available from: http://www.theses.fr/2015CERG0776.
Council of Science Editors:
Zerioul L. Modélisation comportementale d'un réseau sur puce basé sur des interconnexions RF. : Behavioral modeling of a network on chip based on RF interconnections. [Doctoral Dissertation]. Cergy-Pontoise; 2015. Available from: http://www.theses.fr/2015CERG0776
15.
Abdallah, Zeina.
Microwave sources based on high quality factor resonators : modeling, optimization and metrology : Sources micro-ondes à base de résonateurs optiques à très fort facteur de qualité : modélisation, stabilisation et métrologie.
Degree: Docteur es, Photonique et Systèmes Optoélectroniques, 2016, Université Toulouse III – Paul Sabatier
URL: http://www.theses.fr/2016TOU30267
► La technologie photonique-RF offre une alternative intéressante à l'approche purement électronique dans différents systèmes micro-ondes pour des applications militaires, spatiales et civiles. Un composant original,…
(more)
▼ La technologie photonique-RF offre une alternative intéressante à l'approche purement électronique dans différents systèmes micro-ondes pour des applications militaires, spatiales et civiles. Un composant original, l'oscillateur optoélectronique (OEO), permet la génération de signaux RF stables et à haute pureté spectrale. Il est basé sur une liaison photonique micro-onde utilisée comme boucle de rétroaction et comportant soit une fibre longue, soit un résonateur à fort coefficient de qualité. Différentes études ont été menées au cours de cette thèse afin d'optimiser et d'améliorer la performance en termes de stabilité et de bruit de phase pour le cas de l'OEO à résonateur. La caractérisation fine et la modélisation des résonateurs est une première étape de la conception globale du système. La métrologie du résonateur optique est réalisée par une technique originale, dite de spectroscopie RF. Les résultats expérimentaux ont révélé que cette technique permet d'une part d'identifier le régime de couplage du résonateur et d'autre part de déterminer avec une grande précision tous les paramètres d'un dispositif résonant, comme les facteurs de qualité interne et externe ou les facteurs de couplage. Une deuxième étude a été orientée vers l'implémentation d'un modèle non-linéaire fiable du dispositif. Dans un tel modèle, la photodiode rapide nécessitait une description plus précise, dans le but de contrôler la conversion du bruit d'amplitude optique en bruit de phase de l'OEO. Un nouveau modèle non-linéaire d'une photodiode hyperfréquence a été développé sous un logiciel commercial: Agilent ADS. Ce nouveau modèle rend effectivement compte de cette conversion de bruit. Une puissance optique optimale à l'entrée de la photodiode a été déterminée, pour laquelle la contribution de RIN du laser au bruit de phase RF pourrait être négligeable. La performance de l'OEO est affectée par diverses perturbations entrainant un décalage en fréquence entre la fréquence du laser et la fréquence de résonance du résonateur. Il est donc important d'utiliser un système de stabilisation pour contrôler cette différence de fréquence. Des séries d'expériences et de tests ont été menées pour étudier la possibilité, d'une part, de remplacer l'électronique commerciale utilisée auparavant pour le système de verrouillage en fréquence (boucle de Pound-Drever-Hall) par une électronique faible bruit et, d'autre part, d'utiliser un laser à semi-conducteur. Un bilan de ces approches est présenté.
RF photonics technology offers an attractive alternative to classical electronic approaches in several microwave systems for military, space and civil applications. One specific original architecture dubbed as optoelectronic oscillator (OEO) allows the generation of spectrally pure microwave reference frequencies, when the microwave photonic link is used as a feedback loop. Various studies have been conducted during this thesis on the OEO, especially the one that is based on fiber ring resonators, in order to optimize and improve its phase noise performance and its…
Advisors/Committee Members: Llopis, Olivier (thesis director), Fernandez, Arnaud (thesis director).
Subjects/Keywords: Optique-hyperfréquence; Résonateurs optiques; Sources micro-ondes; Bruit de phase; Modélisation; RF-photonics; Optical resonator; Microwave sources; Phase noise; Modeling
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Abdallah, Z. (2016). Microwave sources based on high quality factor resonators : modeling, optimization and metrology : Sources micro-ondes à base de résonateurs optiques à très fort facteur de qualité : modélisation, stabilisation et métrologie. (Doctoral Dissertation). Université Toulouse III – Paul Sabatier. Retrieved from http://www.theses.fr/2016TOU30267
Chicago Manual of Style (16th Edition):
Abdallah, Zeina. “Microwave sources based on high quality factor resonators : modeling, optimization and metrology : Sources micro-ondes à base de résonateurs optiques à très fort facteur de qualité : modélisation, stabilisation et métrologie.” 2016. Doctoral Dissertation, Université Toulouse III – Paul Sabatier. Accessed March 07, 2021.
http://www.theses.fr/2016TOU30267.
MLA Handbook (7th Edition):
Abdallah, Zeina. “Microwave sources based on high quality factor resonators : modeling, optimization and metrology : Sources micro-ondes à base de résonateurs optiques à très fort facteur de qualité : modélisation, stabilisation et métrologie.” 2016. Web. 07 Mar 2021.
Vancouver:
Abdallah Z. Microwave sources based on high quality factor resonators : modeling, optimization and metrology : Sources micro-ondes à base de résonateurs optiques à très fort facteur de qualité : modélisation, stabilisation et métrologie. [Internet] [Doctoral dissertation]. Université Toulouse III – Paul Sabatier; 2016. [cited 2021 Mar 07].
Available from: http://www.theses.fr/2016TOU30267.
Council of Science Editors:
Abdallah Z. Microwave sources based on high quality factor resonators : modeling, optimization and metrology : Sources micro-ondes à base de résonateurs optiques à très fort facteur de qualité : modélisation, stabilisation et métrologie. [Doctoral Dissertation]. Université Toulouse III – Paul Sabatier; 2016. Available from: http://www.theses.fr/2016TOU30267
16.
Mahama, Abdul-Salim.
Switched-model Linearization Technique for RF Power Amplifiers.
Degree: Mathematics and Natural Sciences, 2017, University of Gävle
URL: http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-25495
Subjects/Keywords: Linearization; RF Power Amplifiers; Modeling; Telecommunications; Telekommunikation
…21
2.6
3
Switched-Model Linearization Technique For RF Power Amplifiers
Model… …24
3.2
Modeling and Linearization with Digital Predistortion… …A1
vi
Mahama Abdul-Salim
Switched-Model Linearization Technique For RF Power Amplifiers… …35
vii
Mahama Abdul-Salim
Switched-Model Linearization Technique For RF Power… …Amplifiers
viii
Mahama Abdul-Salim
Switched-Model Linearization Technique For RF Power…
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Mahama, A. (2017). Switched-model Linearization Technique for RF Power Amplifiers. (Thesis). University of Gävle. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-25495
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Mahama, Abdul-Salim. “Switched-model Linearization Technique for RF Power Amplifiers.” 2017. Thesis, University of Gävle. Accessed March 07, 2021.
http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-25495.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Mahama, Abdul-Salim. “Switched-model Linearization Technique for RF Power Amplifiers.” 2017. Web. 07 Mar 2021.
Vancouver:
Mahama A. Switched-model Linearization Technique for RF Power Amplifiers. [Internet] [Thesis]. University of Gävle; 2017. [cited 2021 Mar 07].
Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-25495.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Mahama A. Switched-model Linearization Technique for RF Power Amplifiers. [Thesis]. University of Gävle; 2017. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-25495
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Georgia Tech
17.
Omer, Mohammad.
Towards harmonious coexistence : linear and nonlinear techniques for interference management in RFICs.
Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech
URL: http://hdl.handle.net/1853/51938
► This thesis has sought to provide another look at RF interference at the fundamental level. While previous interference control and regulation methods have existed in…
(more)
▼ This thesis has sought to provide another look at
RF interference at the fundamental level. While previous interference control and regulation methods have existed in the literature, they were more focused on preventing the interference from happening. On the contrary, we have taken a different approach of correcting the interference once it has happened. This allows the transmitters to be more nonlinear, passive filter design to be eased, and receivers to be aware of interference problems. Under this unifying theme of building intelligent radios where receivers are more cognizant of the transmission environment, we have presented a number of architectures.
Advisors/Committee Members: Kenney, James S. (advisor), Khalid, Adeel (committee member), Baxley, Bob (committee member), Anderson, David V. (committee member), Durgin, Gregory D. (committee member), Akyildiz, Ian F. (committee member).
Subjects/Keywords: RF; Nonlinear modeling; PAPR; Volterra series; Adaptive filters; Radio frequency integrated circuits; Radio Interference; Radio frequency; Wireless communication systems
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Omer, M. (2013). Towards harmonious coexistence : linear and nonlinear techniques for interference management in RFICs. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/51938
Chicago Manual of Style (16th Edition):
Omer, Mohammad. “Towards harmonious coexistence : linear and nonlinear techniques for interference management in RFICs.” 2013. Doctoral Dissertation, Georgia Tech. Accessed March 07, 2021.
http://hdl.handle.net/1853/51938.
MLA Handbook (7th Edition):
Omer, Mohammad. “Towards harmonious coexistence : linear and nonlinear techniques for interference management in RFICs.” 2013. Web. 07 Mar 2021.
Vancouver:
Omer M. Towards harmonious coexistence : linear and nonlinear techniques for interference management in RFICs. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2021 Mar 07].
Available from: http://hdl.handle.net/1853/51938.
Council of Science Editors:
Omer M. Towards harmonious coexistence : linear and nonlinear techniques for interference management in RFICs. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/51938
18.
Brokenbourgh, Megan Anne.
Examining the Measurement Invariance of the Minnesota Multiphasic Personality Inventory-2-Restructured Form Internalizing Specific Problem Scales in African- American and Caucasian Men.
Degree: Doctor of Psychology (PsyD), Psychology, 2015, Old Dominion University
URL: 9781339009858
;
https://digitalcommons.odu.edu/psychology_etds/5
► Test bias has long been an area of investigation in the personality assessment literature, including the MMPI-2-RF. Research on previous versions of the MMPI…
(more)
▼ Test bias has long been an area of investigation in the personality assessment literature, including the MMPI-2-
RF. Research on previous versions of the MMPI and MMPI-2-
RF has pointed to mixed results. The current study aims to examine test bias on the MMPI-2-RF’s nine Internalizing Specific Problem Scales by examining measurement invariance using MIMIC
modeling and investigating differential item functioning (DIF). After removal of invalid protocols, the first sample consisted of 2,980 protocols from various settings requested from Pearson (255 African American and 2,755 Caucasian protocols). The second sample consisted of 1,379 valid protocols from psychiatric inpatient settings (1,245 Caucasian and 133 African American protocols). MIMIC
modeling was conducted using delta parametrization and the WLSMV estimator in Mplus (Muthén and Muthén, 1998-2012). Latent continuous response variables and threshold estimates were used to accommodate categorical indicators. Results of the MIMIC
modeling pointed to latent mean differences in four of the nine and two of the nine scales in the Pearson and inpatient samples, respectively. In both samples, latent mean differences were found between African Americans and Caucasians on the Multiple Specific Fears scale. Evidence of DIF was seen in seven of the nine scales in both the Pearson and inpatient samples. However, only a total of four items were found to functioning differently on the Inefficacy and Multiple Specific Fears scales across both samples. These results have implications for the MMPI-2-RF’s invariance across African American and Caucasian test takers and overall psychological assessment standards involving fairness in testing.
Advisors/Committee Members: Richard W. Handel, Robert P. Archer, Desideria S. Hacker, Serina A. Neumann, James F. Paulson.
Subjects/Keywords: Test bias; Personality assessment; MMPI-2-RF; MIMIC modeling; Clinical Psychology; Personality and Social Contexts; Quantitative Psychology
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Brokenbourgh, M. A. (2015). Examining the Measurement Invariance of the Minnesota Multiphasic Personality Inventory-2-Restructured Form Internalizing Specific Problem Scales in African- American and Caucasian Men. (Thesis). Old Dominion University. Retrieved from 9781339009858 ; https://digitalcommons.odu.edu/psychology_etds/5
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Brokenbourgh, Megan Anne. “Examining the Measurement Invariance of the Minnesota Multiphasic Personality Inventory-2-Restructured Form Internalizing Specific Problem Scales in African- American and Caucasian Men.” 2015. Thesis, Old Dominion University. Accessed March 07, 2021.
9781339009858 ; https://digitalcommons.odu.edu/psychology_etds/5.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Brokenbourgh, Megan Anne. “Examining the Measurement Invariance of the Minnesota Multiphasic Personality Inventory-2-Restructured Form Internalizing Specific Problem Scales in African- American and Caucasian Men.” 2015. Web. 07 Mar 2021.
Vancouver:
Brokenbourgh MA. Examining the Measurement Invariance of the Minnesota Multiphasic Personality Inventory-2-Restructured Form Internalizing Specific Problem Scales in African- American and Caucasian Men. [Internet] [Thesis]. Old Dominion University; 2015. [cited 2021 Mar 07].
Available from: 9781339009858 ; https://digitalcommons.odu.edu/psychology_etds/5.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Brokenbourgh MA. Examining the Measurement Invariance of the Minnesota Multiphasic Personality Inventory-2-Restructured Form Internalizing Specific Problem Scales in African- American and Caucasian Men. [Thesis]. Old Dominion University; 2015. Available from: 9781339009858 ; https://digitalcommons.odu.edu/psychology_etds/5
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Dayton
19.
Xu, Yi.
Modeling and Analysis of CPW Based Multi-layer On-chip
Inductors and Design of Multi-resonator for RF Signature
Sensor.
Degree: MS(M.S.), Electrical Engineering, 2011, University of Dayton
URL: http://rave.ohiolink.edu/etdc/view?acc_num=dayton1323927587
► CPW based multi-layer inductors which can provide higher frequency bandwidth and Quality factor (Q) values are studied and characterized so that a new microwave equivalent…
(more)
▼ CPW based multi-layer inductors which can provide
higher frequency bandwidth and Quality factor (Q) values are
studied and characterized so that a new microwave equivalent
circuit model may be obtained. In order to study the correlation
between the inductance and the length, width and thickness of the
conductor, electromagnetic (EM) structures of multi-layer inductors
are designed and compared to electrical models. Simulated data and
test data were compared and analyzed. Results showed that conductor
length change causes major inductance change; conductor width
change causes major capacitance change. Detailed results and
analysis are shown in this thesis work.ivOn the second step, a
passive multi-resonator based
RF signature sensor has been
developed. Based on research result from part I, some improvement
has been made to the designed RFSS has a working frequency at
7.5GHz frequency with about 20dB insertion loss at the fundamental
resonance frequency.
Advisors/Committee Members: Subramanyam, Guru (Committee Chair).
Subjects/Keywords: Electrical Engineering; Electromagnetics; CPW; Inductor modeling; RF signature sensor
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Xu, Y. (2011). Modeling and Analysis of CPW Based Multi-layer On-chip
Inductors and Design of Multi-resonator for RF Signature
Sensor. (Masters Thesis). University of Dayton. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=dayton1323927587
Chicago Manual of Style (16th Edition):
Xu, Yi. “Modeling and Analysis of CPW Based Multi-layer On-chip
Inductors and Design of Multi-resonator for RF Signature
Sensor.” 2011. Masters Thesis, University of Dayton. Accessed March 07, 2021.
http://rave.ohiolink.edu/etdc/view?acc_num=dayton1323927587.
MLA Handbook (7th Edition):
Xu, Yi. “Modeling and Analysis of CPW Based Multi-layer On-chip
Inductors and Design of Multi-resonator for RF Signature
Sensor.” 2011. Web. 07 Mar 2021.
Vancouver:
Xu Y. Modeling and Analysis of CPW Based Multi-layer On-chip
Inductors and Design of Multi-resonator for RF Signature
Sensor. [Internet] [Masters thesis]. University of Dayton; 2011. [cited 2021 Mar 07].
Available from: http://rave.ohiolink.edu/etdc/view?acc_num=dayton1323927587.
Council of Science Editors:
Xu Y. Modeling and Analysis of CPW Based Multi-layer On-chip
Inductors and Design of Multi-resonator for RF Signature
Sensor. [Masters Thesis]. University of Dayton; 2011. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=dayton1323927587

Université de Grenoble
20.
Akkouche, Nourredine.
Optimisation du test de production de circuits analogiques et RF par des techniques de modélisation statistique : Optimisation of the production test of analog and RF circuit using statistical modeling techniques.
Degree: Docteur es, Sciences et technologie industrielles, 2011, Université de Grenoble
URL: http://www.theses.fr/2011GRENT038
► La part dû au test dans le coût de conception et de fabrication des circuits intégrés ne cesse de croître, d'où la nécessité d'optimiser cette…
(more)
▼ La part dû au test dans le coût de conception et de fabrication des circuits intégrés ne cesse de croître, d'où la nécessité d'optimiser cette étape devenue incontournable. Dans cette thèse, de nouvelles méthodes d'ordonnancement et de réduction du nombre de tests à effectuer sont proposées. La solution est un ordre des tests permettant de détecter au plus tôt les circuits défectueux, qui pourra aussi être utilisé pour éliminer les tests redondants. Ces méthodes de test sont basées sur la modélisation statistique du circuit sous test. Cette modélisation inclus plusieurs modèles paramétriques et non paramétrique permettant de s'adapté à tous les types de circuit. Une fois le modèle validé, les méthodes de test proposées génèrent un grand échantillon contenant des circuits défectueux. Ces derniers permettent une meilleure estimation des métriques de test, en particulier le taux de défauts. Sur la base de cette erreur, un ordonnancement des tests est construit en maximisant la détection des circuits défectueux au plus tôt. Avec peu de tests, la méthode de sélection et d'évaluation est utilisée pour obtenir l'ordre optimal des tests. Toutefois, avec des circuits contenant un grand nombre de tests, des heuristiques comme la méthode de décomposition, les algorithmes génétiques ou les méthodes de la recherche flottante sont utilisées pour approcher la solution optimale.
The share of test in the cost of design and manufacture of integrated circuits continues to grow, hence the need to optimize this step. In this thesis, new methods of test scheduling and reducing the number of tests are proposed. The solution is a sequence of tests for early identification of faulty circuits, which can also be used to eliminate redundant tests. These test methods are based on statistical modeling of the circuit under test. This model included several parametric and non-parametric models to adapt to all types of circuit. Once the model is validated, the suggested test methods generate a large sample containing defective circuits. These allow a better estimation of test metrics, particularly the defect level. Based on this error, a test scheduling is constructed by maximizing the detection of faulty circuits. With few tests, the Branch and Bound method is used to obtain the optimal order of tests. However, with circuits containing a large number of tests, heuristics such as decomposition method, genetic algorithms or floating search methods are used to approach the optimal solution.
Advisors/Committee Members: Mir, Salvador (thesis director), Simeu, Emmanuel (thesis director).
Subjects/Keywords: Circuit analogique et RF; Test fonctionnel; Fautes paramétriques; Modélisation statistique; Métriques de test; Algorithme de recherche; Analog and RF circuit; Functional test; Parametric faults; Statistical modeling; Test metrics; Feature Selection Algorithm
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Akkouche, N. (2011). Optimisation du test de production de circuits analogiques et RF par des techniques de modélisation statistique : Optimisation of the production test of analog and RF circuit using statistical modeling techniques. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENT038
Chicago Manual of Style (16th Edition):
Akkouche, Nourredine. “Optimisation du test de production de circuits analogiques et RF par des techniques de modélisation statistique : Optimisation of the production test of analog and RF circuit using statistical modeling techniques.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed March 07, 2021.
http://www.theses.fr/2011GRENT038.
MLA Handbook (7th Edition):
Akkouche, Nourredine. “Optimisation du test de production de circuits analogiques et RF par des techniques de modélisation statistique : Optimisation of the production test of analog and RF circuit using statistical modeling techniques.” 2011. Web. 07 Mar 2021.
Vancouver:
Akkouche N. Optimisation du test de production de circuits analogiques et RF par des techniques de modélisation statistique : Optimisation of the production test of analog and RF circuit using statistical modeling techniques. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2021 Mar 07].
Available from: http://www.theses.fr/2011GRENT038.
Council of Science Editors:
Akkouche N. Optimisation du test de production de circuits analogiques et RF par des techniques de modélisation statistique : Optimisation of the production test of analog and RF circuit using statistical modeling techniques. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENT038

University of Central Florida
21.
Cui, Zhi.
Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-submicron Mos Device And Circuit.
Degree: 2005, University of Central Florida
URL: https://stars.library.ucf.edu/etd/300
► Long-term hot-carrier induced degradation of MOS devices has become more severe as the device size continues to scale down to submicron range. In our work,…
(more)
▼ Long-term hot-carrier induced degradation of MOS devices has become more severe as the device size continues to scale down to submicron range. In our work, a simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily augmented into any of the existing degradation laws without requiring additional algorithm. With more accurate extrapolation method, we present a direct and accurate approach to
modeling empirically the 0.18-ìm MOS reliability, which can predict the MOS lifetime as a function of drain voltage and channel length. With the further study on physical mechanism of MOS device degradation, experimental results indicated that the widely used power-law model for lifetime estimation is inaccurate for deep submicron devices. A better lifetime prediction method is proposed for the deep-submicron devices. We also develop a Spice-like reliability model for advanced radio frequency
RF MOS devices and implement our reliability model into SpectreRF circuit simulator via Verilog-A HDL (Hardware Description Language). This
RF reliability model can be conveniently used to simulate
RF circuit performance degradation
Advisors/Committee Members: Liou, Juin J..
Subjects/Keywords: MOSFET; reliability; lifetime; Hot-Carrier; modeling; RF; Verilog-A; simulation; RF; Cadence; Electrical and Computer Engineering; Electrical and Electronics; Engineering
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Cui, Z. (2005). Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-submicron Mos Device And Circuit. (Doctoral Dissertation). University of Central Florida. Retrieved from https://stars.library.ucf.edu/etd/300
Chicago Manual of Style (16th Edition):
Cui, Zhi. “Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-submicron Mos Device And Circuit.” 2005. Doctoral Dissertation, University of Central Florida. Accessed March 07, 2021.
https://stars.library.ucf.edu/etd/300.
MLA Handbook (7th Edition):
Cui, Zhi. “Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-submicron Mos Device And Circuit.” 2005. Web. 07 Mar 2021.
Vancouver:
Cui Z. Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-submicron Mos Device And Circuit. [Internet] [Doctoral dissertation]. University of Central Florida; 2005. [cited 2021 Mar 07].
Available from: https://stars.library.ucf.edu/etd/300.
Council of Science Editors:
Cui Z. Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-submicron Mos Device And Circuit. [Doctoral Dissertation]. University of Central Florida; 2005. Available from: https://stars.library.ucf.edu/etd/300
22.
Bazigos, A.
Μοντελοποίηση MOS τρανζίστορ σε υψηλές συχνότητες.
Degree: 2008, National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ)
URL: http://hdl.handle.net/10442/hedi/17037
► The target of an analytical MOSFET model is the consistent and physically correct description of the transistor, within the frame of a modern CMOS technology.…
(more)
▼ The target of an analytical MOSFET model is the consistent and physically correct description of the transistor, within the frame of a modern CMOS technology. But, on the other hand, a model has much more to offer to the designer than a black box that answers the wondering of how a certain element of a circuit works, and how the circuit’s behaviour may be optimized. At this thesis the modelling of the MOSFET is studied. Its product is the implementation of an analytical MOSFET model, compatible with a plethora of simulators of electrical circuits, able to cover all the phenomena that appear in modern submicron CMOS technologies. A quantitative and qualitative verification of the behaviour of the model is presented, in comparison with modern technologies of minimum channel length down to 70nm, and also against tests based on the physics theory that describes the behaviour of the transistor. The modelling procedure that is analyzed here, is based on the charge sheet theory. According to this theory, the inversion charges at the two nodes at the ends of the channel are calculated, and the calculation of the various electrical quantities of the transistor is based on the integration along the channel. The equations of the analytical model demand a series of approximations, which do not affect the overall accuracy of the model but at unimportant degree, justifying, this way, fully their usage. The most basic approximation is the assumption of a linear relation between the inversion charge and the surface potential. The result of the usage of the physical theory for the extraction of the model, and not empirical relations, is that a unified set of equations is used at the bottom line, for the correct description of the behaviour of the transistor, under any bias conditions, and under any level of inversion. This adherence to the physical theory allows, also, the minimization of the model parameters that are demanded to be calculated for the fitting of the behaviour of the model upon a certain technology. At this thesis, the physical theory, that covers the behaviour of the model, is carefully presented, as it is adopted for describing modern submicron technologies. All the new phenomena that appear today, and did not in older similar technologies are being addressed. Typical examples are the quantum effects that are more intense as the insulator gets thinner, as well as the gate current that cannot be further neglected. On the other hand, all the customary phenomena that appear in CMOS technologies are also described. The description covers all sides of the behaviour of the transistor, and comparisons are made with static measurements, as well as transconductances and Y-parameters, with frequency up to decades of GHz. In parallel with the presentation of the model, and according to each phenomenon that is studied each time, a comparison of the simulations results against relative measurements is displayed, verifying this way in action the correct behaviour of the model. A model, though, can also operate as a designer’s…
Subjects/Keywords: Αναλυτική μοντελοποίηση; Τρανζίστορ πεδιακού φαινομένου MOS; Υψηλές συχνότητες rf; Compact modeling; Mosfet; High frequencies - RF; Verilog-A
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Bazigos, A. (2008). Μοντελοποίηση MOS τρανζίστορ σε υψηλές συχνότητες. (Thesis). National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ). Retrieved from http://hdl.handle.net/10442/hedi/17037
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Bazigos, A. “Μοντελοποίηση MOS τρανζίστορ σε υψηλές συχνότητες.” 2008. Thesis, National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ). Accessed March 07, 2021.
http://hdl.handle.net/10442/hedi/17037.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Bazigos, A. “Μοντελοποίηση MOS τρανζίστορ σε υψηλές συχνότητες.” 2008. Web. 07 Mar 2021.
Vancouver:
Bazigos A. Μοντελοποίηση MOS τρανζίστορ σε υψηλές συχνότητες. [Internet] [Thesis]. National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ); 2008. [cited 2021 Mar 07].
Available from: http://hdl.handle.net/10442/hedi/17037.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Bazigos A. Μοντελοποίηση MOS τρανζίστορ σε υψηλές συχνότητες. [Thesis]. National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ); 2008. Available from: http://hdl.handle.net/10442/hedi/17037
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
23.
Stoyanova, Tsenka.
RF signal modeling and deployment strategy targeting outdoor RSS-based localization and tracking applications in wireless sensor network.
Degree: 2011, University of Patras
URL: http://hdl.handle.net/10889/5237
► The localization of the sensor nodes is a fundamental issue in the area of wireless sensor networks (WSNs). An attractive way for estimating the location…
(more)
▼ The localization of the sensor nodes is a fundamental issue in the area of wireless
sensor networks (WSNs). An attractive way for estimating the location of mobile or
static wireless objects is by using the received signal strength (RSS) attenuation with the distance, which does not require any additional hardware. This is possible due to the fact that in most sensor nodes radios the received signal strength indicator (RSSI) is a standard feature and can be obtained automatically by the received messages. On the other hand the RSS is known for being noisy, unstable, variable and difficult to use in practice. For achieving a better understanding of the nature of these difficulties and limitations, and for identifying the range of applicability of the RSS in localization and tracking scenarios, a thorough study about the RSS and its dependence on the various factors and environmental conditions is essential.
The present doctoral dissertation investigates the feasibility of sensor node
localization and target tracking with the resources of the WSN technology, when using
only the RSS of the exchanged messages. Moreover, it offers experimental support to
the hypothesis that proper
modeling of the RSS behavior and appropriate selection of
the topology parameters are essential for the applicability of WSN in real world
conditions. In brief, the present doctoral dissertation concerns with: (i) identifying the main factors that influence the accuracy, the variability and the reliability of the obtained RSS, (ii)
modeling the
RF signal propagation in the context of WSNs, and (iii)defining the basic deployment constraints and evaluation of the topology parameters that can guarantee successful localization and tracking.
For assessing the practical value of various
RF-models, experiments using Tmote Sky and TelosB sensor nodes in real-field outdoor environment were carried out. The impact of a number of factors, such as the operating frequency of the radio, the transmitter–receiver distance, the variation of transceivers hardware due to manufacturing tolerances, the antenna orientation, and the environmental conditions, on the RSS was investigated. The influence of the various factors that affect the
RF signal propagation and some constraints imposed by the WSN nature was accounted in order to design practical models, suitable for outdoor unobstructed and outdoor tree-obstructed environments.
A pre-deployment simulation framework has been introduced and in its context a
RF signal propagation-based connectivity strategy (RFCS) has been developed to fulfill
three deployment provisions: (i) discovering the most appropriate height from the
ground and distances for the sensor nodes, (ii) reducing the transmission power, and
(iii) minimizing the interference from non-neighbor nodes. The RFCS uses a
RF signal
propagation model to predict the RSS in order to identify the most appropriate
communication-based deployment parameters, i.e. T-R distance, height from the ground and transmission power.
The localization and…
Advisors/Committee Members: Παπαδόπουλος, Γεώργιος, Παπαδόπουλος, Γεώργιος, Καλύβας, Γρηγόριος, Ευσταθίου, Κωνσταντίνος, Κουμπιάς, Σταύρος, Κωτσόπουλος, Σταύρος, Νικολετσέας, Σωτήρης, Κουλαμάς, Χρήστος.
Subjects/Keywords: Wireless sensor networks; Received signal strength; Localization; Target tracking; RF signal propagation modeling; Deployment; 621.384; Ασύρματα δίκτυα αισθητήρων; Ισχύς λαμβανομένου σήματος; Εντοπισμός θέσης; Ιχνηλάτηση; Μοντελοποίηση της μετάδοσης ραδιοσήματος; Τοποθέτηση
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Stoyanova, T. (2011). RF signal modeling and deployment strategy targeting outdoor RSS-based localization and tracking applications in wireless sensor network. (Doctoral Dissertation). University of Patras. Retrieved from http://hdl.handle.net/10889/5237
Chicago Manual of Style (16th Edition):
Stoyanova, Tsenka. “RF signal modeling and deployment strategy targeting outdoor RSS-based localization and tracking applications in wireless sensor network.” 2011. Doctoral Dissertation, University of Patras. Accessed March 07, 2021.
http://hdl.handle.net/10889/5237.
MLA Handbook (7th Edition):
Stoyanova, Tsenka. “RF signal modeling and deployment strategy targeting outdoor RSS-based localization and tracking applications in wireless sensor network.” 2011. Web. 07 Mar 2021.
Vancouver:
Stoyanova T. RF signal modeling and deployment strategy targeting outdoor RSS-based localization and tracking applications in wireless sensor network. [Internet] [Doctoral dissertation]. University of Patras; 2011. [cited 2021 Mar 07].
Available from: http://hdl.handle.net/10889/5237.
Council of Science Editors:
Stoyanova T. RF signal modeling and deployment strategy targeting outdoor RSS-based localization and tracking applications in wireless sensor network. [Doctoral Dissertation]. University of Patras; 2011. Available from: http://hdl.handle.net/10889/5237
24.
Relan, Jatin.
Modèles électrophysiologiques personnalisés de tachycardie ventriculaire pour la planification de la thérapie par ablation radio-fréquence : Personalised Electrophysiological Models of Ventricular Tachycardia for Radio Frequency Ablation Therapy Planning.
Degree: Docteur es, Informatique temps réel, robotique et automatique, 2012, Paris, ENMP
URL: http://www.theses.fr/2012ENMP0042
► La modélisation de l’électrophysiologie in silico a été un sujet de recherche important ces dernières décennies. Afin de pouvoir utiliser ces progrès importants dans les…
(more)
▼ La modélisation de l’électrophysiologie in silico a été un sujet de recherche important ces dernières décennies. Afin de pouvoir utiliser ces progrès importants dans les applications cliniques, il faut mettre en place des modèles macroscopiques qui peuvent être utilisés pour la planification et le guidage des procédures cliniques.L’objectif de cette thèse est de construire de tels modèles macroscopiques spécifiques à chaque patient pour le diagnostic et la prévision, dans le but d’améliorer la planification et le guidage de l’ablation par radio-fréquence (ARF) des patients souffrant de tachycardie ventriculaire (TV) après infarctus. Dans ce travail, nous avons proposé un cadre pour la personnalisation d’un modèle cardiaque 3D, le modèle de Mitchell-Schaeffer (MS), et nous avons évalué sa puissance prédictive dans plusieurs configurations de stimulation. Ceci a été réalisé sur des données ex vivo de cœurs porcins à l’aide d’images médicales et de données cartographiques optiques de l’épicarde. Ce cadre a ensuite été appliqué à un ensemble de données cliniques provenant d’imagerie hybride XMR et d’une procédure de cartographie électrophysiologique sur un patient souffrant d’insuffisance cardiaque.Ensuite, le modèle 3D MS a également été adapté pour simuler le comportement macroscopique structural de la fibrose près des cicatrices. La simulation d’une étude in silico de stimulation de TV en utilisant le modèle adapté personnalisé MS a été réalisée pour quantifier le risque de TV en termes de cartes d’inductibilité, de réentrées des modèles et de cartes de points de sortie. Une approche de modélisation pour l’ablation par RF fondée sur l’état de l’art a été proposée. Enfin, l’étude in silico de stimulation de TV a été appliquée aux données in vivo personnalisées des patients, qui ont suivi ce protocole. Ceci a permis une validation de la prévision in silico de TV post-infarctus par comparaison avec la TV clinique induite. Ler ôle de l’hétérogénéité spatiale des propriétés des tissus cardiaques estimés dans la genèse de TV ischémique a été évalué, ainsi que les caractéristiques des points de sortie, qui sont les candidats potentiels à l’ablation par RF.
Modelling cardiac electrophysiology for arrhythmias in silico has been an important research topic for the last decades. In order to translate this important progress into clinical applications, there is a requirement to make macroscopic models that can be used for the planning and guidance of clinical procedures. The objective of this thesis was to construct such macroscopic EP models specifict o each patient for study and prediction, in order to improve the planning and guidance of radio frequency ablation (RFA) the rapieson patients suffering from post infarction Ventricular Tachycardia (VT). In this work, we proposed a framework for the personalisation of a 3D cardiac EP model, the Mitchell-Schaeffer (MS) model, an devaluated its volumetric predictive power under various pacing scenarios.This was performed on ex vivo large porcine healthy heart susing Diffusion…
Advisors/Committee Members: Ayache, Nicholas (thesis director).
Subjects/Keywords: Modélisation d'électrophysiologie cardiaque et arythmies; Problèmes inverses; Planification de l'ablation par radiofréquence; Personnalisation des modèles; Cardiac Electrophysiology modeling; Inverse problems; RF Ablation planning of Cardiac Arrhythmias; Model personalization
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Relan, J. (2012). Modèles électrophysiologiques personnalisés de tachycardie ventriculaire pour la planification de la thérapie par ablation radio-fréquence : Personalised Electrophysiological Models of Ventricular Tachycardia for Radio Frequency Ablation Therapy Planning. (Doctoral Dissertation). Paris, ENMP. Retrieved from http://www.theses.fr/2012ENMP0042
Chicago Manual of Style (16th Edition):
Relan, Jatin. “Modèles électrophysiologiques personnalisés de tachycardie ventriculaire pour la planification de la thérapie par ablation radio-fréquence : Personalised Electrophysiological Models of Ventricular Tachycardia for Radio Frequency Ablation Therapy Planning.” 2012. Doctoral Dissertation, Paris, ENMP. Accessed March 07, 2021.
http://www.theses.fr/2012ENMP0042.
MLA Handbook (7th Edition):
Relan, Jatin. “Modèles électrophysiologiques personnalisés de tachycardie ventriculaire pour la planification de la thérapie par ablation radio-fréquence : Personalised Electrophysiological Models of Ventricular Tachycardia for Radio Frequency Ablation Therapy Planning.” 2012. Web. 07 Mar 2021.
Vancouver:
Relan J. Modèles électrophysiologiques personnalisés de tachycardie ventriculaire pour la planification de la thérapie par ablation radio-fréquence : Personalised Electrophysiological Models of Ventricular Tachycardia for Radio Frequency Ablation Therapy Planning. [Internet] [Doctoral dissertation]. Paris, ENMP; 2012. [cited 2021 Mar 07].
Available from: http://www.theses.fr/2012ENMP0042.
Council of Science Editors:
Relan J. Modèles électrophysiologiques personnalisés de tachycardie ventriculaire pour la planification de la thérapie par ablation radio-fréquence : Personalised Electrophysiological Models of Ventricular Tachycardia for Radio Frequency Ablation Therapy Planning. [Doctoral Dissertation]. Paris, ENMP; 2012. Available from: http://www.theses.fr/2012ENMP0042
25.
Bowen, David.
MODELING AND TESTING OF ETHERNET TRANSFORMERS.
Degree: Electrical Engineering, 2011, University of Maryland
URL: http://hdl.handle.net/1903/11520
► Twisted-pair Ethernet is now the standard home and office last-mile network technology. For decades, the IEEE standard that defines Ethernet has required electrical isolation between…
(more)
▼ Twisted-pair Ethernet is now the standard home and office last-mile network technology. For decades, the IEEE standard that defines Ethernet has required electrical isolation between the twisted pair cable and the Ethernet device. So, for decades, every Ethernet interface has used magnetic core Ethernet transformers to isolate Ethernet devices and keep users safe in the event of a potentially dangerous fault on the network media. The current state-of-the-art Ethernet transformers are miniature (<5mm diameter) ferrite-core toroids wrapped with approximately 10 to 30 turns of wire. As small as current Ethernet transformers are, they still limit further Ethernet device miniaturization and require a separate bulky package or jack housing. New coupler designs must be explored which are capable of exceptional miniaturization or on-chip fabrication.
This dissertation thoroughly explores the performance of the current commercial Ethernet transformers to both increase understanding of the device's behavior and outline performance parameters for replacement devices. Lumped element and distributed circuit models are derived; testing schemes are developed and used to extract model parameters from commercial Ethernet devices. Transfer relation measurements of the commercial Ethernet transformers are compared against the model's behavior and it is found that the tuned, distributed models produce the best transfer relation match to the measured data.
Process descriptions and testing results on fabricated thin-film dielectric-core toroid transformers are presented. The best results were found for a 32-turn transformer loaded with 100Ω, the impedance of twisted pair cable. This transformer gave a flat response from about 10MHz to 40MHz with a height of approximately 0.45. For the fabricated transformer structures, theoretical methods to determine resistance, capacitance and inductance are presented. A special analytical and numerical analysis of the fabricated transformer inductance is presented. Planar cuts of magnetic slope fields around the dielectric-core toroid are shown that describe the effect of core height and winding density on flux uniformity without a magnetic core.
Advisors/Committee Members: Mayergoyz, Isaak D (advisor).
Subjects/Keywords: Electrical Engineering; Electromagnetics; distributed modeling; Ethernet; MEMS; RF testing; Transformer
…Modeling and testing
of Ethernet Transformers,” IEEE Transactions On Magnetics, 45, 10, 4793… …x28;2009)
3) Bowen, D. Mayergoyz, I. Krafft, C. “Electromagnetic Modeling of Ethernet… …205
FIG. 7.20. Close-up photo of probe station RF probes over sample… …used, modeling with classic and distributed circuit models in differential
and common signal…
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Bowen, D. (2011). MODELING AND TESTING OF ETHERNET TRANSFORMERS. (Thesis). University of Maryland. Retrieved from http://hdl.handle.net/1903/11520
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Bowen, David. “MODELING AND TESTING OF ETHERNET TRANSFORMERS.” 2011. Thesis, University of Maryland. Accessed March 07, 2021.
http://hdl.handle.net/1903/11520.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Bowen, David. “MODELING AND TESTING OF ETHERNET TRANSFORMERS.” 2011. Web. 07 Mar 2021.
Vancouver:
Bowen D. MODELING AND TESTING OF ETHERNET TRANSFORMERS. [Internet] [Thesis]. University of Maryland; 2011. [cited 2021 Mar 07].
Available from: http://hdl.handle.net/1903/11520.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Bowen D. MODELING AND TESTING OF ETHERNET TRANSFORMERS. [Thesis]. University of Maryland; 2011. Available from: http://hdl.handle.net/1903/11520
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
26.
Sun, Fengyuan.
Analyse et caractérisation des couplages substrat et de la connectique dans les circuits 3D : Vers des modèles compacts : Analysis and characterization of substrate and connection couplings in 3D circuits : Towards compact models.
Degree: Docteur es, Electronique, 2013, INSA Lyon
URL: http://www.theses.fr/2013ISAL0073
► L’intégration 3D est la solution technologique la plus prometteuse pour suivre le niveau d’intégration dictée par la loi de Moore (cf. more than Moore, versus…
(more)
▼ L’intégration 3D est la solution technologique la plus prometteuse pour suivre le niveau d’intégration dictée par la loi de Moore (cf. more than Moore, versus more Moore). Elle entraine des travaux de recherche importants depuis une douzaine d’années. Elle permet de superposer différents circuits et composants dans un seul boitier. Son principal avantage est de permettre une association de technologies hétérogènes et très spécialisées pour la constitution d’un système complet, tout en préservant un très haut niveau de performance grâce à des connexions très courtes entre ces différents circuits. L’objectif de ce travail est de fournir des modélisations cohérentes de via traversant, ou/et de contacts dans le substrat, avec plusieurs degrés de finesse/précision, pour permettre au concepteur de haut niveau de gérer et surtout d’optimiser le partitionnement entre les différentes strates. Cette modélisation passe par le développement de plusieurs vues à différents niveaux d’abstraction: du modèle physique au modèle « haut niveau ». Elle devait permettre de répondre à différentes questions rencontrées dans le processus de conception :- le modèle physique de via basé sur une simulation électromagnétique 2D ou 3D (solveur « éléments finis ») est utilisé pour optimiser l’architecture du via (matériaux, dimensions etc.) Il permet de déterminer les performances électriques des via, notamment en haute fréquence. Les simulations électromagnétiques permettent également de quantifier le couplage entre via adjacents. - le modèle compact analytique de via et de leur couplage, basé sur une description de type ligne de transmission ou noyaux de Green, est utilisé pour les simulations au niveau bloc, ainsi que des simulations de type Spice. Les modèles analytiques sont souvent validés par rapport à des mesures et/ou des modèles physiques.
The 3D integration is the most promising technological solution to track the level of integration dictated by Moore's Law (see more than Moore, Moore versus more). It leads to important research for a dozen years. It can superimpose different circuits and components in one box. Its main advantage is to allow a combination of heterogeneous and highly specialized technologies for the establishment of a complete system, while maintaining a high level of performance with very short connections between the different circuits. The objective of this work is to provide consistent modeling via crossing, and / or contacts in the substrate, with various degrees of finesse / precision to allow the high-level designer to manage and especially to optimize the partitioning between the different strata. This modelization involves the development of multiple views at different levels of abstraction: the physical model to "high level" model. This would allow to address various issues faced in the design process: - The physical model using an electromagnetic simulation based on 2D or 3D ( finite element solver ) is used to optimize the via (materials, dimensions etc..) It determines the electrical performance of the…
Advisors/Committee Members: Gontrand, Christian (thesis director).
Subjects/Keywords: Electronique; Conception de cricuits numériques; Intégration 3D; Circuits intégrés 3D; Modélisation; Couplage de substrats; Fonction de Green; Modèle de ligne de transmission; Fréquence radio (RF); Extraction de l'impédence; Electronics; Through-Cilicon Vias; 3D Integrated Circuits; Compact modeling; Substrates coupling; Green's function; Transmission Line Model; Radio Frequency - RF; Impedance Extraction; 621.381 520 72
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Sun, F. (2013). Analyse et caractérisation des couplages substrat et de la connectique dans les circuits 3D : Vers des modèles compacts : Analysis and characterization of substrate and connection couplings in 3D circuits : Towards compact models. (Doctoral Dissertation). INSA Lyon. Retrieved from http://www.theses.fr/2013ISAL0073
Chicago Manual of Style (16th Edition):
Sun, Fengyuan. “Analyse et caractérisation des couplages substrat et de la connectique dans les circuits 3D : Vers des modèles compacts : Analysis and characterization of substrate and connection couplings in 3D circuits : Towards compact models.” 2013. Doctoral Dissertation, INSA Lyon. Accessed March 07, 2021.
http://www.theses.fr/2013ISAL0073.
MLA Handbook (7th Edition):
Sun, Fengyuan. “Analyse et caractérisation des couplages substrat et de la connectique dans les circuits 3D : Vers des modèles compacts : Analysis and characterization of substrate and connection couplings in 3D circuits : Towards compact models.” 2013. Web. 07 Mar 2021.
Vancouver:
Sun F. Analyse et caractérisation des couplages substrat et de la connectique dans les circuits 3D : Vers des modèles compacts : Analysis and characterization of substrate and connection couplings in 3D circuits : Towards compact models. [Internet] [Doctoral dissertation]. INSA Lyon; 2013. [cited 2021 Mar 07].
Available from: http://www.theses.fr/2013ISAL0073.
Council of Science Editors:
Sun F. Analyse et caractérisation des couplages substrat et de la connectique dans les circuits 3D : Vers des modèles compacts : Analysis and characterization of substrate and connection couplings in 3D circuits : Towards compact models. [Doctoral Dissertation]. INSA Lyon; 2013. Available from: http://www.theses.fr/2013ISAL0073

The Ohio State University
27.
Dai, Wenhua.
Large signal electro-thermal LDMOSFET modeling and the
thermal memory effects in RF power amplifiers.
Degree: PhD, Electrical Engineering, 2004, The Ohio State University
URL: http://rave.ohiolink.edu/etdc/view?acc_num=osu1078935135
► In this dissertation an analytical large signal electro-thermal LDMOSFET model – Agere Electro-Thermal (AET) model – is presented. Composed by three parts: a die level device model,…
(more)
▼ In this dissertation an analytical large signal
electro-thermal LDMOSFET model – Agere Electro-Thermal (AET)
model – is presented. Composed by three parts: a die level
device model, an equivalent circuit for the package portion and a
thermal network, AET model was implemented in Agilent EESOF's
RF
circuit design software – Advanced Design System (ADS). The
methodology developed could be applied to other high power device
models development as well. The LDMOSFET's distributed and dynamic
thermal responses are computed by a modified image method. Thermal
memory effects are studied with the aid of the newly developed
distributed and dynamic thermal models. The package model in such
discrete devices are extracted from geometry estimation, and
S-parameter measurements. Loadpull design technique was implemented
in simulation level, and the contours of output power and
efficiency agree with those obtained in loadpull measurement. The
model exhibits a good accuracy in predicting P1dB, gain, PAE, IMD3
and IMD. Pros and cons between analytical model and table based
model are compared by using AET and a formally developed BSpline
table model – OSUFET. A distributed electro-thermal model was
developed to investigate the impact of a non-uniformly distributed
temperature profile on the model accuracy. A 3D image method was
used to compute the device's thermal resistance matrix. The
complexity of the distributed electro-thermal model was further
reduced by using its symmetry. Temperature distribution is
reproduced in this model and it is found to have no significant
impacts on electrical performance. The image method was further
extended to compute the 3D transient temperature step responses,
from which multiple thermal time constants can be extracted and
applied to electro-thermal models. This improved transient thermal
model is found to have a strong impact on the thermal memory
effects in
RF power amplifiers. With the aid of several
electro-thermal models with different thermal transient accuracy,
thermal memory effects and electrical memory effects can be
characterized separately. Thermal memory effects are found to be
stronger in amplifiers where predistortion technique is present,
and is most significant for envelop frequency below 1
MHz.
Advisors/Committee Members: Roblin, Patrick (Advisor).
Subjects/Keywords: LDMOS; LDMOSFET modeling; electro-thermal modeling; large signal modeling; RF power amplifier; power amplifier design; power amplifier linearization; power amplifier predistortion; thermal memory effects; thermal image methods
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Dai, W. (2004). Large signal electro-thermal LDMOSFET modeling and the
thermal memory effects in RF power amplifiers. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1078935135
Chicago Manual of Style (16th Edition):
Dai, Wenhua. “Large signal electro-thermal LDMOSFET modeling and the
thermal memory effects in RF power amplifiers.” 2004. Doctoral Dissertation, The Ohio State University. Accessed March 07, 2021.
http://rave.ohiolink.edu/etdc/view?acc_num=osu1078935135.
MLA Handbook (7th Edition):
Dai, Wenhua. “Large signal electro-thermal LDMOSFET modeling and the
thermal memory effects in RF power amplifiers.” 2004. Web. 07 Mar 2021.
Vancouver:
Dai W. Large signal electro-thermal LDMOSFET modeling and the
thermal memory effects in RF power amplifiers. [Internet] [Doctoral dissertation]. The Ohio State University; 2004. [cited 2021 Mar 07].
Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1078935135.
Council of Science Editors:
Dai W. Large signal electro-thermal LDMOSFET modeling and the
thermal memory effects in RF power amplifiers. [Doctoral Dissertation]. The Ohio State University; 2004. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1078935135

Queens University
28.
McRae, John.
Multifunction Radio Frequency System Design Using Nonlinear Models
.
Degree: Electrical and Computer Engineering, Queens University
URL: http://hdl.handle.net/1974/27521
► Multifunction radio frequency (RF) systems provide a general-purpose hardware platform for designers to implement arbitrary waveform transmission and reception. In this thesis, a multifunction RF…
(more)
▼ Multifunction radio frequency (RF) systems provide a general-purpose hardware platform for designers to implement arbitrary waveform transmission and reception. In this thesis, a multifunction RF transceiver is designed, simulated and tested. The transceiver was designed for radar applications operating at X-band (8 to 12 GHz) and is wideband, thereby providing the designer with a wide wireless window through which they can simultaneously transmit and receive multiple signals. The system is constructed entirely using commercial off-the-shelf components; the design therefore
consists of frequency planning, specifying a system architecture and selecting appropriate components.
The final transceiver design was constructed using a homodyne architecture, which contains a mixer in the transmitter and the receiver in order to perform frequency translation between baseband and X-band. Using a mixer in the system design requires that a frequency plan be developed in order to ensure that image and sideband overlaps do not occur at the mixer outputs. Frequency planning rules were therefore developed for wideband applications and were used to specify an instantaneous bandwidth of 1.1 GHz, the largest for a multifunction system. A new criterion, called the radar metric, was then developed to quantify the design specifications of the RF system.
The frequency plan and radar metric were used to specify the final system design, which could then be simulated. In order to acquire accurate simulation results, each component was individually measured and characterized. The amplifiers in the
system were characterized using nonlinear models so that their harmonic behaviour could be accounted for. Wideband systems are particularly susceptible to harmonic interference since it is possible for harmonics to enter the large frequency window provided by the system, hence the need for accurate nonlinear modeling. Finally, a prototype was constructed which showed that the system was able to generate a maximum transmit power of 13.56 dBm, with a receiver noise figure of 2.33 dB. Moreover, simultaneous signals were transmitted and received through the system, thereby verifying the multifunctional capabilities of the transceiver.
Subjects/Keywords: Electrical Engineering
;
RF
;
System Design
;
X-Parameters
;
Polynomial Modeling
;
Frequency Planning
;
Multifunction Systems
;
Software Defined Radar
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
McRae, J. (n.d.). Multifunction Radio Frequency System Design Using Nonlinear Models
. (Thesis). Queens University. Retrieved from http://hdl.handle.net/1974/27521
Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
McRae, John. “Multifunction Radio Frequency System Design Using Nonlinear Models
.” Thesis, Queens University. Accessed March 07, 2021.
http://hdl.handle.net/1974/27521.
Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
McRae, John. “Multifunction Radio Frequency System Design Using Nonlinear Models
.” Web. 07 Mar 2021.
Note: this citation may be lacking information needed for this citation format:
No year of publication.
Vancouver:
McRae J. Multifunction Radio Frequency System Design Using Nonlinear Models
. [Internet] [Thesis]. Queens University; [cited 2021 Mar 07].
Available from: http://hdl.handle.net/1974/27521.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.
Council of Science Editors:
McRae J. Multifunction Radio Frequency System Design Using Nonlinear Models
. [Thesis]. Queens University; Available from: http://hdl.handle.net/1974/27521
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

INP Toulouse
29.
Almustafa, Mohamad.
Modélisation des micro-plasmas, conception des circuits micro-ondes, Coupleur Directionnel Hybride pour Mesures et des applications en Télécommunication : Modélisation de micro-plasma et conception circuits micro-ondes associés; Coupleur directif hybride pour des applications en télmécommunications.
Degree: Docteur es, Micro-ondes, Électromagnétisme et Optoélectronique (MEMO), 2013, INP Toulouse
URL: http://www.theses.fr/2013INPT0033
► L'intégration des nouveaux éléments basés sur la physique des plasmas dans le domaine des circuits et des systèmes micro-ondes est l'objectif de ce travail. En…
(more)
▼ L'intégration des nouveaux éléments basés sur la physique des plasmas dans le domaine des circuits et des systèmes micro-ondes est l'objectif de ce travail. En profitant des caractéristiques électromagnétiques des plasmas et en jouant sur leur architecture, on développe des micro-commutateurs micro-ondes et d'autres circuits radio et hyperfréquences en technologies microrubans ou en guide d'onde… La simulation de la propagation des ondes électromagnétiques dans un plasma et les études de l'interaction entre un plasma et les ondes électromagnétiques nécessite la connaissance des paramètres fondamentaux du plasma comme la permittivité. C'est pour cela qu'on étudie aussi les mesures plasmas par différents techniques comme la transmission/réflexion des ondes électromagnétiques, la perturbation des cavités résonnantes, ... Un schéma électrique équivalent modélisant un micro-commutateur hyperfréquence en plasma, est obtenu grâce aux mesures des courants de décharge électrique, à la rétro-simulation et aux techniques de modélisation numérique. Un coupleur directif hybride compact est utilisé pour les mesures plasmas en assurant la protection du matériel et de l'équipement de mesure des signaux d'un plasma.
Integration of new plasma-based elements for RF and microwave circuits and systems is the goal of this work. Taking advantage of electromagnetic characteristics of plasmas and playing on their architecture, we develop microwave micro-switches and other RF and microwave circuits by different technologies such as microstrip, waveguide circuits. The simulation of the propagation of electromagnetic waves in plasma and studying the interaction between plasma and electromagnetic waves require a pre-knowledge of its basic intrinsic parameters such as permittivity for that we also study measures and plasma different techniques like transmission/reflection of an electromagnetic waves, cavity perturbation technique... An equivalent electrical circuit modeling the plasma will be used for modeling microwave micro-switches. It is obtained by measurements of electric discharge currents, the reverse CAD simulation and numerical modeling techniques. A compact hybrid directional coupler is used to measure plasma and to protect test equipment from dangerous signals of the electrical discharge.
Advisors/Committee Members: David, Jacques (thesis director), Vuong, Tân-Hoa (thesis director).
Subjects/Keywords: Micro-Commutateurs Plasmas; Circuit Planaires; Radio et Hyperfréquences; Mesure Plasma; Antennes Plasma; Modélisation des Plasmas; Coupleurs Directifs Hybrides; Plasma Micro-Switches; Printed Board Circuits (PCB); RF/ Microwave; Plasma Measurement; Plasma Antennas; Plasma Modeling; Hybrid Directional Couplers
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Almustafa, M. (2013). Modélisation des micro-plasmas, conception des circuits micro-ondes, Coupleur Directionnel Hybride pour Mesures et des applications en Télécommunication : Modélisation de micro-plasma et conception circuits micro-ondes associés; Coupleur directif hybride pour des applications en télmécommunications. (Doctoral Dissertation). INP Toulouse. Retrieved from http://www.theses.fr/2013INPT0033
Chicago Manual of Style (16th Edition):
Almustafa, Mohamad. “Modélisation des micro-plasmas, conception des circuits micro-ondes, Coupleur Directionnel Hybride pour Mesures et des applications en Télécommunication : Modélisation de micro-plasma et conception circuits micro-ondes associés; Coupleur directif hybride pour des applications en télmécommunications.” 2013. Doctoral Dissertation, INP Toulouse. Accessed March 07, 2021.
http://www.theses.fr/2013INPT0033.
MLA Handbook (7th Edition):
Almustafa, Mohamad. “Modélisation des micro-plasmas, conception des circuits micro-ondes, Coupleur Directionnel Hybride pour Mesures et des applications en Télécommunication : Modélisation de micro-plasma et conception circuits micro-ondes associés; Coupleur directif hybride pour des applications en télmécommunications.” 2013. Web. 07 Mar 2021.
Vancouver:
Almustafa M. Modélisation des micro-plasmas, conception des circuits micro-ondes, Coupleur Directionnel Hybride pour Mesures et des applications en Télécommunication : Modélisation de micro-plasma et conception circuits micro-ondes associés; Coupleur directif hybride pour des applications en télmécommunications. [Internet] [Doctoral dissertation]. INP Toulouse; 2013. [cited 2021 Mar 07].
Available from: http://www.theses.fr/2013INPT0033.
Council of Science Editors:
Almustafa M. Modélisation des micro-plasmas, conception des circuits micro-ondes, Coupleur Directionnel Hybride pour Mesures et des applications en Télécommunication : Modélisation de micro-plasma et conception circuits micro-ondes associés; Coupleur directif hybride pour des applications en télmécommunications. [Doctoral Dissertation]. INP Toulouse; 2013. Available from: http://www.theses.fr/2013INPT0033
30.
Χρυσικός, Θεόφιλος.
Μετρήσεις χαρακτηρισμού και στατιστική μοντελοποίηση ασύρματου καναλιού σε εσωτερικούς και εξωτερικούς χώρους με διαλείψεις και παρεμβολές.
Degree: 2012, University of Patras
URL: http://hdl.handle.net/10889/5547
► Το πρόβλημα της μοντελοποίησης του ασύρματου διαύλου συνίσταται σε ένα ολοένα και αυξανόμενο πλήθος παραμέτρων και ιδιαίτερων χαρακτηριστικών που πρέπει να λαμβάνονται υπόψη και να…
(more)
▼ Το πρόβλημα της μοντελοποίησης του ασύρματου διαύλου συνίσταται σε ένα ολοένα και αυξανόμενο πλήθος παραμέτρων και ιδιαίτερων χαρακτηριστικών που πρέπει να λαμβάνονται υπόψη και να ενσωματώνονται στα πλαίσια του RF σχεδιασμού (Radio-Frequency planning) ενός ασύρματου δικτύου εύρωστης παροχής υπηρεσιών. Ο χαρακτηρισμός του ασύρματου καναλιού προϋποθέτει κάτι περισσότερο από μία ντετερμινιστική εξίσωση που υπολογίζει τις απώλειες οδεύσεως ελεύθερου χώρου συναρτήσει της απόστασης πομπού-δέκτη και της συχνότητας. Ένα αξιόπιστο μοντέλο απωλειών σε μία τέτοια περίπτωση απαιτεί τον συνυπολογισμό των απωλειών λόγω των διάφορων μηχανισμών διάδοσης και εξασθένησης της Η/Μ ακτινοβολίας, συμπεριλαμβανομένων των απωλειών λόγω εμποδίων, αλλά και των φαινομένων σκίασης λόγω ανθρώπινης παρεμβολής.
Η σημασία της συμβολής της διατριβής έγκειται στην συγκριτική αντιπαραβολή των βασικότερων μοντέλων απωλειών οδεύσεως και στην αριθμητική διόρθωση και επαναξιολόγηση του μοντέλου της ITU για ένα σύνολο τοπολογιών σύνθετης ράδιο-διάδοσης. Οι προτεινόμενες μας αλλαγές στο μοντέλο ITU αύξησαν σημαντικά την αξιοπιστία του όχι μόνο σε σχέση με την αρχική του απόδοση αλλά και συγκριτικά με τα υπόλοιπα μοντέλα. Επιπρόσθετα, υπολογίσαμε αναλυτικά για κάθε τοπολογία την εξασθένηση ανά απόσταση και προβήκαμε στην μοντελοποίηση της γεωγραφικής διασποράς της εξασθένησης ανά απόσταση με τρόπο που μπορεί να αποτελέσει το θεμέλιο ενός προγνωστικού εργαλείου για την παράμετρο αυτή.
Επίσης, εξετάσαμε τις διαλείψεις μεγάλης κλίμακας και καταλήξαμε σε μία καινοτόμο μέθοδο για τον υπολογισμό του βάθους σκίασης απευθείας από τα εμπόδια της εκάστοτε τοπολογίας. Η μέθοδος αυτή προτάθηκε και ελέγχθηκε για την ακρίβειά της στα 2.4 GHz, αλλά μπορεί να εφαρμοστεί για κάθε συχνότητα ενδιαφέροντος εφόσον ακολουθηθούν οι διαδικασίες καταμέτρησης των απωλειών σκίασης των εμποδίων κάθε τύπου και πλήθους. Με τη μέθοδο αυτή μπορεί να υπολογιστεί και η εξασθένηση ανά απόσταση μέσω του βάθους σκίασης, συνεπώς είναι εφικτός ο χαρακτηρισμός της εξασθένησης εντός της τοπολογίας χωρίς την αναγκαιότητα πραγματοποίησης εκτεταμένων μετρήσεων. Επιπρόσθετα, εξετάσαμε πώς διαφορετικοί μηχανισμοί ράδιο-διάδοσης οδηγούν σε διαφορετική γεωγραφική διασπορά των τοπικών τιμών της λαμβανόμενης ισχύος.
Τέλος, παρουσιάστηκε η λύση της Ασφάλειας Φυσικού Επιπέδου (Wireless Information-Theoretic Security, WITS) με διερεύνηση της επίδρασης των ρεαλιστικών απωλειών οδεύσεων ενός ασύρματου διαύλου με εμπόδια και διαλείψεις στα όρια των τιμών των παραμέτρων, ενώ επίσης εξετάστηκε για πρώτη φορά σε κλειστή μορφή η Αποκοπή Χωρητικότητας Ασφαλείας (Outage Secrecy Capacity). Μελετήσαμε την επίδραση της κινητικότητας των χρηστών στην αξιοπιστία της μεθόδου σε επίπεδο προσομοιώσεων αλλά και με πειραματικές μετρήσεις, αξιολογώντας ποσοτικά και ποιοτικά την επίδρασή τους στα όρια τιμών των παραμέτρων υπό την παρουσία ενός ωτακουστή, και εν συνεχεία σε καθεστώς πολλαπλών ωτακουστών, θεωρώντας μέθοδο συνεργασίας ωτακουστών SC και MRC.
Wireless Channel Modeling…
Advisors/Committee Members: Κωτσόπουλος, Σταύρος, Chrysikos, Theofilos, Κωτσόπουλος, Σταύρος, Καλύβας, Γρηγόριος, Στυλιανάκης, Βασίλειος, Σώρρας, Κωνσταντίνος, Καραγιαννίδης, Γεώργιος, Κουλουρίδης, Σταύρος, Μαράς, Ανδρέας.
Subjects/Keywords: Χαρακτηρισμός ασύρματου καναλιού; Μετρήσεις ηλεκτρομαγνητικής ακτινοβολίας; Διαλείψεις; Παρεμβολές; Βάθος σκίασης; Μοντελοποίηση απωλειών οδεύσεως; Ασφάλεια φυσικού επιπέδου; 621.382 24; Wireless channel characterization; RF measurements; Fading; Interference; Shadow depth; Path loss modeling; Physical layer security
Record Details
Similar Records
Cite
Share »
Record Details
Similar Records
Cite
« Share





❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Χρυσικός, . (2012). Μετρήσεις χαρακτηρισμού και στατιστική μοντελοποίηση ασύρματου καναλιού σε εσωτερικούς και εξωτερικούς χώρους με διαλείψεις και παρεμβολές. (Doctoral Dissertation). University of Patras. Retrieved from http://hdl.handle.net/10889/5547
Chicago Manual of Style (16th Edition):
Χρυσικός, Θεόφιλος. “Μετρήσεις χαρακτηρισμού και στατιστική μοντελοποίηση ασύρματου καναλιού σε εσωτερικούς και εξωτερικούς χώρους με διαλείψεις και παρεμβολές.” 2012. Doctoral Dissertation, University of Patras. Accessed March 07, 2021.
http://hdl.handle.net/10889/5547.
MLA Handbook (7th Edition):
Χρυσικός, Θεόφιλος. “Μετρήσεις χαρακτηρισμού και στατιστική μοντελοποίηση ασύρματου καναλιού σε εσωτερικούς και εξωτερικούς χώρους με διαλείψεις και παρεμβολές.” 2012. Web. 07 Mar 2021.
Vancouver:
Χρυσικός . Μετρήσεις χαρακτηρισμού και στατιστική μοντελοποίηση ασύρματου καναλιού σε εσωτερικούς και εξωτερικούς χώρους με διαλείψεις και παρεμβολές. [Internet] [Doctoral dissertation]. University of Patras; 2012. [cited 2021 Mar 07].
Available from: http://hdl.handle.net/10889/5547.
Council of Science Editors:
Χρυσικός . Μετρήσεις χαρακτηρισμού και στατιστική μοντελοποίηση ασύρματου καναλιού σε εσωτερικούς και εξωτερικούς χώρους με διαλείψεις και παρεμβολές. [Doctoral Dissertation]. University of Patras; 2012. Available from: http://hdl.handle.net/10889/5547
◁ [1] [2] ▶
.