subject:(Quantum wells)

RMIT University

1. Rezaee, A. Phase-periodic quantum structures and perturbed potential wells.

Degree: 2009, RMIT University

URL: http://researchbank.rmit.edu.au/view/rmit:6791

► The restrictions of micro-scale systems are approaching rapidly. In anticipation of this development, nano-scale electronics has become the focus of many researchers and engineers in… (more)

Subjects/Keywords: Fields of Research; Quantum wells

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APA (6^th Edition):

Rezaee, A. (2009). Phase-periodic quantum structures and perturbed potential wells. (Thesis). RMIT University. Retrieved from http://researchbank.rmit.edu.au/view/rmit:6791

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Rezaee, A. “Phase-periodic quantum structures and perturbed potential wells.” 2009. Thesis, RMIT University. Accessed January 18, 2021. http://researchbank.rmit.edu.au/view/rmit:6791.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Rezaee, A. “Phase-periodic quantum structures and perturbed potential wells.” 2009. Web. 18 Jan 2021.

Vancouver:

Rezaee A. Phase-periodic quantum structures and perturbed potential wells. [Internet] [Thesis]. RMIT University; 2009. [cited 2021 Jan 18]. Available from: http://researchbank.rmit.edu.au/view/rmit:6791.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rezaee A. Phase-periodic quantum structures and perturbed potential wells. [Thesis]. RMIT University; 2009. Available from: http://researchbank.rmit.edu.au/view/rmit:6791

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Oregon State University

2. Harff, Nathan E. Electron transport in coupled double quantum wells and wires.

Degree: PhD, Electrical and Computer Engineering, 1997, Oregon State University

URL: http://hdl.handle.net/1957/34430

Subjects/Keywords: Quantum wells

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APA (6^th Edition):

Harff, N. E. (1997). Electron transport in coupled double quantum wells and wires. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/34430

Chicago Manual of Style (16^th Edition):

Harff, Nathan E. “Electron transport in coupled double quantum wells and wires.” 1997. Doctoral Dissertation, Oregon State University. Accessed January 18, 2021. http://hdl.handle.net/1957/34430.

MLA Handbook (7^th Edition):

Harff, Nathan E. “Electron transport in coupled double quantum wells and wires.” 1997. Web. 18 Jan 2021.

Vancouver:

Harff NE. Electron transport in coupled double quantum wells and wires. [Internet] [Doctoral dissertation]. Oregon State University; 1997. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/1957/34430.

Council of Science Editors:

Harff NE. Electron transport in coupled double quantum wells and wires. [Doctoral Dissertation]. Oregon State University; 1997. Available from: http://hdl.handle.net/1957/34430

University of Houston

3. Vijaya, Gopi Krishna 1986-. III-V DILUTE NITRIDE MULTI-QUANTUM WELL SOLAR CELLS FOR HIGH EFFICIENCY PHOTOVOLTAICS.

Degree: PhD, Physics, 2014, University of Houston

URL: http://hdl.handle.net/10657/1678

► Addition of a few percent of nitrogen to conventional III-V semiconductor alloys creates a surprising reduction of the host band-gap. Due to their unusual band-gap… (more)

▼ Addition of a few percent of nitrogen to conventional III-V semiconductor alloys creates a surprising reduction of the host band-gap. Due to their unusual band-gap characteristics, dilute nitride III-V semiconductor alloys such as Ga(In)AsN are suitable candidates to serve as a 1eV 3rd junction sub-cell in current high efficiency multi-junction solar cells, and are projected to achieve solar cell efficiencies of ~40%. In order to overcome material constraints such as poor minority carrier lifetime and doping issues in dilute nitrides, prior work has involved insertion of quantum well (QW) nanostructures of dilute nitrides within the intrinsic region of a solar cell, nevertheless, issues of carrier extraction have persisted. In order to improve upon this design, in this work, the band structure and energy levels of dilute nitride multi-quantum-well (MQW) system are calculated, from which the absorption coefficient is evaluated as a function of strain, nitrogen concentration, and electric field strength. Fitting the simulated value of absorption to experimental results showed incomplete extraction of carriers in the multi-quantum well region. Experimental characterization of previously grown dilute nitrides revealed the presence of a parasitic nitridation of the GaAsN/GaAs interface. Improvement of QW quality was done by using a modified run-vent system reduced nitridation. Improvement of carrier extraction was proposed based on the calculations of thermally assisted resonant tunneling QW design, and preliminary devices were grown to test this design. Results included a record open circuit voltage of 636 mV, and improved carrier extraction from resonant tunneling MQW solar cells of ~1eV, enabling future fabrication of multi-junction devices with efficiencies of ~39% (1 sun) and ~49% (500 sun conc). Advisors/Committee Members: Freundlich, Alex (advisor), Bassler, Kevin E. (committee member), Cheung, Margaret S. (committee member), Stokes, Donna W. (committee member), Trombetta, Leonard P. (committee member).

Subjects/Keywords: Photovoltaics; Quantum wells; Semiconductors

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APA (6^th Edition):

Vijaya, G. K. 1. (2014). III-V DILUTE NITRIDE MULTI-QUANTUM WELL SOLAR CELLS FOR HIGH EFFICIENCY PHOTOVOLTAICS. (Doctoral Dissertation). University of Houston. Retrieved from http://hdl.handle.net/10657/1678

Chicago Manual of Style (16^th Edition):

Vijaya, Gopi Krishna 1986-. “III-V DILUTE NITRIDE MULTI-QUANTUM WELL SOLAR CELLS FOR HIGH EFFICIENCY PHOTOVOLTAICS.” 2014. Doctoral Dissertation, University of Houston. Accessed January 18, 2021. http://hdl.handle.net/10657/1678.

MLA Handbook (7^th Edition):

Vijaya, Gopi Krishna 1986-. “III-V DILUTE NITRIDE MULTI-QUANTUM WELL SOLAR CELLS FOR HIGH EFFICIENCY PHOTOVOLTAICS.” 2014. Web. 18 Jan 2021.

Vancouver:

Vijaya GK1. III-V DILUTE NITRIDE MULTI-QUANTUM WELL SOLAR CELLS FOR HIGH EFFICIENCY PHOTOVOLTAICS. [Internet] [Doctoral dissertation]. University of Houston; 2014. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/10657/1678.

Council of Science Editors:

Vijaya GK1. III-V DILUTE NITRIDE MULTI-QUANTUM WELL SOLAR CELLS FOR HIGH EFFICIENCY PHOTOVOLTAICS. [Doctoral Dissertation]. University of Houston; 2014. Available from: http://hdl.handle.net/10657/1678

University of Hong Kong

4. Hu, Kaige. Optically-injected spin current and its scattering effect in semiconductor quantum wells.

Degree: 2007, University of Hong Kong

URL: http://hdl.handle.net/10722/52378

Subjects/Keywords: Spintronics.; Quantum wells

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APA (6^th Edition):

Hu, K. (2007). Optically-injected spin current and its scattering effect in semiconductor quantum wells. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/52378

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Hu, Kaige. “Optically-injected spin current and its scattering effect in semiconductor quantum wells.” 2007. Thesis, University of Hong Kong. Accessed January 18, 2021. http://hdl.handle.net/10722/52378.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Hu, Kaige. “Optically-injected spin current and its scattering effect in semiconductor quantum wells.” 2007. Web. 18 Jan 2021.

Vancouver:

Hu K. Optically-injected spin current and its scattering effect in semiconductor quantum wells. [Internet] [Thesis]. University of Hong Kong; 2007. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/10722/52378.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hu K. Optically-injected spin current and its scattering effect in semiconductor quantum wells. [Thesis]. University of Hong Kong; 2007. Available from: http://hdl.handle.net/10722/52378

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

5. Fernandes, Fernando Massa. Fotodetectores infravermelhos de alta eficiência baseados em poços quânticos crescidos por epitaxia de feixes moleculares.

Degree: PhD, Física, 2013, University of São Paulo

URL: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-24092014-120342/ ;

► Fotodetectores baseados em poços quânticos (QWIPs Quantum¬-Well Infrared Photodetectors) possuem inúmeras aplicações nos campos da medicina, engenharia, defesa e monitoramento meteorológico e ambiental. O espectro… (more)

▼ Fotodetectores baseados em poços quânticos (QWIPs Quantum¬-Well Infrared Photodetectors) possuem inúmeras aplicações nos campos da medicina, engenharia, defesa e monitoramento meteorológico e ambiental. O espectro de absorção dos QWIPs possui alta seletividade do comprimento de onda, e esse tipo de fotodetector é a escolha atual para a fabricação de câmeras de alta resolução operando no infravermelho. Atualmente, o Brasil enfrenta uma limitação na importação desse tipo de tecnologia, imposta pelos países mais desenvolvidos, devido à possibilidade de ser usada em aplicações militares. Neste trabalho, propomos o desenvolvimento e a fabricação de novos fotodetectores baseados em transições intrabanda em poços quânticos crescidos por epitaxia de feixes moleculares sobre substratos de GaAs. O crescimento epitaxial dos poços quânticos foi investigado, e as amostras foram analisadas por fotoluminescência (PL, Photoluminescence) de modo a verificarmos a qualidade e reprodutibilidade das heteroestruturas produzidas. O cálculo dos níveis de energia e das funções de onda dos poços quânticos foi feito por meio da implementação numérica do método da matriz de transferência [21] no software Mathematica. Esse método também foi aplicado ao cálculo autoconsistente envolvendo a dopagem da estrutura. A partir dos valores das energias de confinamento e das funções de onda obtidas pelo programa, algumas grandezas físicas puderam ser estimadas tais como o coeficiente de absorção teórico, a corrente de escuro e o ruído. Também foi implementado um modelo para o cálculo dos níveis de energia de uma impureza hidrogenóide dentro de um poço quântico de GaAs com barreiras de AlGaAs. Acredita-se que esse sistema possua melhores características de ruído em relação a um QWIP comum, no qual as impurezas estão completamente ionizadas [25] [26] [27]. O processamento das amostras para a fabricação dos fotodetectores foi desenvolvido e otimizado, e envolveu técnicas convencionais de fotolitografia, para a formação por ataque químico das estruturas de pequenos fotodetectores singelos sobre a amostra, e a deposição de filmes finos metálicos para a obtenção dos contatos (ôhmicos). Foram desenvolvidas e implementadas várias técnicas de caracterização para determinar o comprimento de onda de operação, a responsividade, o ruído intrínseco, e a corrente no escuro (dark current) dos QWIPs fabricados. No inicio deste projeto de doutorado, nenhuma das técnicas de caracterização estava disponível no laboratório. A caracterização completa dos QWIPs foi feita medindo-se o coeficiente de absorção e a resposta espectral por espectroscopia no infravermelho por transformada de Fourier (FTIR), a fotocorrente foi medida com um corpo negro, a corrente de escuro usando curvas I-V, e o ruído com um analisador de espectros. As medidas foram realizadas em função da voltagem de polarização (bias) aplicada, em diferentes valores de temperatura. Foram crescidas várias amostras de QWIPs, para absorção nas janelas atmosféricas de 3m a 5m e de 8m a 12m. A curva de absorção de cada… Advisors/Committee Members: Quivy, Alain Andre.

Subjects/Keywords: Fotodetectores; Photodetectors; poços quânticos; quantum wells

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APA (6^th Edition):

Fernandes, F. M. (2013). Fotodetectores infravermelhos de alta eficiência baseados em poços quânticos crescidos por epitaxia de feixes moleculares. (Doctoral Dissertation). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/43/43134/tde-24092014-120342/ ;

Chicago Manual of Style (16^th Edition):

Fernandes, Fernando Massa. “Fotodetectores infravermelhos de alta eficiência baseados em poços quânticos crescidos por epitaxia de feixes moleculares.” 2013. Doctoral Dissertation, University of São Paulo. Accessed January 18, 2021. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-24092014-120342/ ;.

MLA Handbook (7^th Edition):

Fernandes, Fernando Massa. “Fotodetectores infravermelhos de alta eficiência baseados em poços quânticos crescidos por epitaxia de feixes moleculares.” 2013. Web. 18 Jan 2021.

Vancouver:

Fernandes FM. Fotodetectores infravermelhos de alta eficiência baseados em poços quânticos crescidos por epitaxia de feixes moleculares. [Internet] [Doctoral dissertation]. University of São Paulo; 2013. [cited 2021 Jan 18]. Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-24092014-120342/ ;.

Council of Science Editors:

Fernandes FM. Fotodetectores infravermelhos de alta eficiência baseados em poços quânticos crescidos por epitaxia de feixes moleculares. [Doctoral Dissertation]. University of São Paulo; 2013. Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-24092014-120342/ ;

6. Banks, Hunter. Electron-Hole Recollisions in Driven Quantum Wells.

Degree: 2016, University of California – eScholarship, University of California

URL: http://www.escholarship.org/uc/item/69c6m3zk

► Driving semiconductor quantum wells with terahertz electric fields strong enough to overcome the Coulomb attraction between bound electron-hole pairs leads to high-order sideband generation (HSG).… (more)

▼ Driving semiconductor quantum wells with terahertz electric fields strong enough to overcome the Coulomb attraction between bound electron-hole pairs leads to high-order sideband generation (HSG). In HSG, excitons are optically-injected into quantum wells by a weak near-infrared (NIR) laser while simultaneously being illuminated with a terahertz field from the UCSB Free Electron Laser. The phenomenon can be described by the so-called "three step model" developed in high-field atomic physics: (1) the electron and hole tunnel-ionize in the strong field, (2) the now-free particles accelerate in the field, and (3) they recollide, emitting a photon. The two lasers are continuous, so the emitted photons are sidebands on the NIR laser. Because of the large gain of kinetic energy before recollision, an HSG spectrum has a broad bandwidth with many more sidebands above the NIR frequency than below. The largest spectra span over one hundred nanometers, with over 100th order sidebands above and 20th order below.The electron and hole must remain coherent throughout their trajectories, which can last hundreds of femtoseconds and extend for more than fifty nanometers, if they are to recollide. Sidebands have been observed that result from recollisions with kinetic energies far above the threshold for optical phonon emission. These high orders persist up to room temperature. Not even quenched disorder in the quantum wells strongly attenuates the HSG signal. Because of this coherence, the electron and hole are very sensitive to the complete band structure of the material. Excitation by linear NIR polarization creates both the electron and hole in a superposition of spin-up and spin-down states with complex coefficients given by the relative orientation of the NIR polarization and the THz polarization. Interference between these the spin-up and spin-down particles, particularly in the valence band and mediated by non-Abelian Berry curvature, has large effects on both the intensity and polarization state of the sidebands. The connection between HSG and complete band structure points to the possibility of directly measuring both the band dispersion relations as well as the non-Abelian Berry curvature of the host material.

Subjects/Keywords: Physics; Nonlinear optics; Quantum wells; Terahertz

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APA (6^th Edition):

Banks, H. (2016). Electron-Hole Recollisions in Driven Quantum Wells. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/69c6m3zk

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Banks, Hunter. “Electron-Hole Recollisions in Driven Quantum Wells.” 2016. Thesis, University of California – eScholarship, University of California. Accessed January 18, 2021. http://www.escholarship.org/uc/item/69c6m3zk.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Banks, Hunter. “Electron-Hole Recollisions in Driven Quantum Wells.” 2016. Web. 18 Jan 2021.

Vancouver:

Banks H. Electron-Hole Recollisions in Driven Quantum Wells. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2021 Jan 18]. Available from: http://www.escholarship.org/uc/item/69c6m3zk.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Banks H. Electron-Hole Recollisions in Driven Quantum Wells. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/69c6m3zk

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Glasgow

7. Karkhanehchi, Mohammad Mehdi. Generation and detection of short optical pulses using semiconductor devices.

Degree: PhD, 1997, University of Glasgow

URL: http://theses.gla.ac.uk/75293/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360165

► The design, fabrication and characterisation of semiconductor waveguide autocorrelator, as a device for use in the analysis of ultra-short pulses, are described. The initial experiments… (more)

▼ The design, fabrication and characterisation of semiconductor waveguide autocorrelator, as a device for use in the analysis of ultra-short pulses, are described. The initial experiments carried out, using an AlGaAs optical waveguide, to detect the interferometric autocorrelation trace of light from a mode-locked Nd+3:YAG laser. Both intensity and interferometric autocorrelation traces of pulses from a mode-locked Nd+3:YLF laser were then successfully obtained for the first time using the same device. The autocorrelation trace gives the full width at half maximum of the mode-locked pulses from the Nd+3:YLF laser to be approximately 17.7 ps. The complete polarisation dependence of the two photon absorption coefficient, beta, has been obtained by measuring the orientational dependence and the contrast ratio of the photocurrent in the device at an optical frequency far above that of the half-bandgap. Measurements of the pulse width dependence of the two-photon absorption photocurrent in GaAs p-i-n waveguide photodetector using subpicosecond optical pulses at 1.5 mum are reported. For a fixed pulse energy, the photocurrent is observed to depend linearly on the inverse of the optical pulse width. A subnanosecond electrical response is also observed. The propagation loss and the single photon absorption coefficients are measured as a function of wavelength in a device with an Al0.2Ga0.8As waveguide core. The propagation loss was as low as 1.37 cm-l at a wavelength of 904 nm. Using a photocurrent technique, band-to-band absorption was measured for photon energies well below that of the bandgap. It was demonstrated that, although the band-to-band absorption coefficient is small (~10-2 cm-1 at a wavelength of 1 mum), it is responsible for reducing the contrast ratio of the waveguide autocorrelator. Two-section lasers were fabricated in strained layer InGaAs/GaAs double quantum well material with intracavity saturable absorbers. Passive Q-switching was demonstrate in these lasers. Self-pulsation is seen at frequencies up to 12.5 GHz with a full width at half maximum of 20 ps.

Subjects/Keywords: 535; Quantum wells

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APA (6^th Edition):

Karkhanehchi, M. M. (1997). Generation and detection of short optical pulses using semiconductor devices. (Doctoral Dissertation). University of Glasgow. Retrieved from http://theses.gla.ac.uk/75293/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360165

Chicago Manual of Style (16^th Edition):

Karkhanehchi, Mohammad Mehdi. “Generation and detection of short optical pulses using semiconductor devices.” 1997. Doctoral Dissertation, University of Glasgow. Accessed January 18, 2021. http://theses.gla.ac.uk/75293/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360165.

MLA Handbook (7^th Edition):

Karkhanehchi, Mohammad Mehdi. “Generation and detection of short optical pulses using semiconductor devices.” 1997. Web. 18 Jan 2021.

Vancouver:

Karkhanehchi MM. Generation and detection of short optical pulses using semiconductor devices. [Internet] [Doctoral dissertation]. University of Glasgow; 1997. [cited 2021 Jan 18]. Available from: http://theses.gla.ac.uk/75293/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360165.

Council of Science Editors:

Karkhanehchi MM. Generation and detection of short optical pulses using semiconductor devices. [Doctoral Dissertation]. University of Glasgow; 1997. Available from: http://theses.gla.ac.uk/75293/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.360165

University of Oregon

8. Baldwin, Thomas. Trion-based Optical Processes in Semiconductor Quantum Wells.

Degree: PhD, Department of Physics, 2016, University of Oregon

URL: http://hdl.handle.net/1794/19728

► In a semiconductor, negative charge is carried by conduction-band electrons and positive charge is carried by valence-band holes. While charge transport properties can be understood… (more)

▼ In a semiconductor, negative charge is carried by conduction-band electrons and positive charge is carried by valence-band holes. While charge transport properties can be understood by considering the motion of these carriers individually, the optical properties are largely determined by their mutual interaction. The hydrogen-like bound state of an electron with a hole, or exciton, is the fundamental optical excitation in direct-gap materials such as gallium arsenide and cadmium telluride. In this dissertation, we consider charged excitons, or trions. A bound state of an exciton with a resident electron or hole, trions are a relatively pure manifestation of the three-body problem which can be studied experimentally. This is a subject of practical as well as academic interest: Since the trion is the elementary optical excitation of a resident free carrier, the related optical processes can open pathways for manipulating carrier spin and carrier transport. We present three experimental investigations of trion-based optical processes in semiconductor quantum wells. In the first, we demonstrate electromagnetically induced transparency via the electron spin coherence made possible by the trion transition. We explore the practical limits of this technique in high magnetic fields. In the second, we present a direct measurement of trion and exciton oscillator strength at high magnetic fields. These data reveal insights about the structure of the trion's three-body wavefunction relative to that of its next excited state, the triplet trion. In the last, we investigate the mechanism underlying exciton-correlated tunneling, an optically-controllable transport process in mixed-type quantum wells. Extensive experimental studies indicate that it is due to a local, indirect interaction between an exciton and a hole, forming one more example of a trion-mediated optical process. This dissertation includes previously published co-authored material. Advisors/Committee Members: Steck, Daniel (advisor).

Subjects/Keywords: Excitons; Gallium arsenide; Quantum wells; Trions

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APA (6^th Edition):

Baldwin, T. (2016). Trion-based Optical Processes in Semiconductor Quantum Wells. (Doctoral Dissertation). University of Oregon. Retrieved from http://hdl.handle.net/1794/19728

Chicago Manual of Style (16^th Edition):

Baldwin, Thomas. “Trion-based Optical Processes in Semiconductor Quantum Wells.” 2016. Doctoral Dissertation, University of Oregon. Accessed January 18, 2021. http://hdl.handle.net/1794/19728.

MLA Handbook (7^th Edition):

Baldwin, Thomas. “Trion-based Optical Processes in Semiconductor Quantum Wells.” 2016. Web. 18 Jan 2021.

Vancouver:

Baldwin T. Trion-based Optical Processes in Semiconductor Quantum Wells. [Internet] [Doctoral dissertation]. University of Oregon; 2016. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/1794/19728.

Council of Science Editors:

Baldwin T. Trion-based Optical Processes in Semiconductor Quantum Wells. [Doctoral Dissertation]. University of Oregon; 2016. Available from: http://hdl.handle.net/1794/19728

University of New Mexico

9. Ahirwar, Pankaj. Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs.

Degree: Electrical and Computer Engineering, 2013, University of New Mexico

URL: http://hdl.handle.net/1928/23307

► The antimonide based vertical external cavity surface emitting lasers (VECSELs) operating in the 1.8 to 2.8 μm wavelength range are typically based on InGaSb/AlGaSb quantum… (more)

Subjects/Keywords: Semiconductor lasers.; Quantum wells.; Transmission electron microscopy.

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APA (6^th Edition):

Ahirwar, P. (2013). Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs. (Doctoral Dissertation). University of New Mexico. Retrieved from http://hdl.handle.net/1928/23307

Chicago Manual of Style (16^th Edition):

Ahirwar, Pankaj. “Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs.” 2013. Doctoral Dissertation, University of New Mexico. Accessed January 18, 2021. http://hdl.handle.net/1928/23307.

MLA Handbook (7^th Edition):

Ahirwar, Pankaj. “Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs.” 2013. Web. 18 Jan 2021.

Vancouver:

Ahirwar P. Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs. [Internet] [Doctoral dissertation]. University of New Mexico; 2013. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/1928/23307.

Council of Science Editors:

Ahirwar P. Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs. [Doctoral Dissertation]. University of New Mexico; 2013. Available from: http://hdl.handle.net/1928/23307

University of Hong Kong

10. Chan, Yung. Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications.

Degree: 1998, University of Hong Kong

URL: http://hdl.handle.net/10722/33448

Subjects/Keywords: Photonics.; Quantum wells.

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APA (6^th Edition):

Chan, Y. (1998). Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/33448

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Chan, Yung. “Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications.” 1998. Thesis, University of Hong Kong. Accessed January 18, 2021. http://hdl.handle.net/10722/33448.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Chan, Yung. “Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications.” 1998. Web. 18 Jan 2021.

Vancouver:

Chan Y. Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications. [Internet] [Thesis]. University of Hong Kong; 1998. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/10722/33448.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chan Y. Modeling of interdiffusion mechanism in III-V semiconductor quantum well for photonics applications. [Thesis]. University of Hong Kong; 1998. Available from: http://hdl.handle.net/10722/33448

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Rutgers University

11. Tskipuri, Levan, 1978-. Metallic quantum well states and chemisorption:.

Degree: PhD, Physics and Astronomy, 2009, Rutgers University

URL: http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051915

►

In this thesis the adsorption properties of carbon monoxide (CO) on the epitaxial fcc-Co/Cu(100), Ni/Cu (100) and Cu/fcc-Fe/Cu(100) systems are reported. The fcc-Co/Cu(100), Ni/Cu(100) systems… (more)

▼

In this thesis the adsorption properties of carbon monoxide (CO) on the epitaxial fcc-Co/Cu(100), Ni/Cu (100) and Cu/fcc-Fe/Cu(100) systems are reported. The fcc-Co/Cu(100), Ni/Cu(100) systems are known to exhibit metallic quantum well (MQW) states at energies 1 eV or greater above the Fermi level, that disperse upward with increasing film thickness, but never cross the Fermi level and are less pronounced than MQW features in Cu/fcc-Fe/Cu(100) system. The presence of quantum size effects in electronic structure of these systems gives a possibility to modify molecule-surface interactions and influence CO adsorption. All these systems were explored with low energy electron diffraction (LEED), inverse photoemission (IPE), infrared absorption (FTIR) Spectroscopy and temperature programmed desorption (TPD). TPD measurements revealed several desorption features upon CO adsorption on The fcc-Co/Cu(100), Ni/Cu(100) systems. These TPD features are linked to the corresponding modes in IR spectra and suggest a range of bonding configurations at Co and Ni surfaces. The analysis of TPD and FTIR spectra are given. The adsorption properties of these thin film surfaces are compared to those of single crystal hcp-Co and Ni(100). For increasing thickness of Cu on the fcc-Fe/Cu system, MQW states periodically cross and modulate IPE intensity at Fermi level. Changes in the peak temperature of TPD spectra are correlated with these modulations of IPE intensity. IR shows two features in the CO stretch frequency spectra, which are identified as CO adsorbed on terrace sites and at step sites. The IR results also suggest a correlation between intensities of these two spectral features and MQW states crossing the Fermi level. The results of measurements done on the dimethyl disulfide (DMDS) molecule adsorbed on the Cu/fcc-Fe/Cu(100) MQW system is also reported. DMDS is a simple example of an organic thiol, a class of molecules that exhibit self-assembly properties on metal surfaces. The measurements suggest possible modifications of molecular adsorption on the Cu surface. Similarities and differences of DMDS molecule adsorption on thin film Cu(100) and single crystal Cu(100) will be discussed.

Advisors/Committee Members: Tskipuri, Levan, 1978- (author), Bartynski, Robert (chair), Andrei, Eva (internal member), Gilman, Ronald (internal member), Vescovo, Elio (outside member).

Subjects/Keywords: Quantum wells; Chemisorption

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Tskipuri, Levan, 1. (2009). Metallic quantum well states and chemisorption:. (Doctoral Dissertation). Rutgers University. Retrieved from http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051915

Chicago Manual of Style (16^th Edition):

Tskipuri, Levan, 1978-. “Metallic quantum well states and chemisorption:.” 2009. Doctoral Dissertation, Rutgers University. Accessed January 18, 2021. http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051915.

MLA Handbook (7^th Edition):

Tskipuri, Levan, 1978-. “Metallic quantum well states and chemisorption:.” 2009. Web. 18 Jan 2021.

Vancouver:

Tskipuri, Levan 1. Metallic quantum well states and chemisorption:. [Internet] [Doctoral dissertation]. Rutgers University; 2009. [cited 2021 Jan 18]. Available from: http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051915.

Council of Science Editors:

Tskipuri, Levan 1. Metallic quantum well states and chemisorption:. [Doctoral Dissertation]. Rutgers University; 2009. Available from: http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.000051915

University of Oklahoma

12. Gaspe, Chomani Kishanika. Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb.

Degree: PhD, 2013, University of Oklahoma

URL: http://hdl.handle.net/11244/318770

► An experimental study of growth, structural and electronic properties of elemental Sb QWs with GaSb barriers was performed to explore their potential as topological insulators.… (more)

Subjects/Keywords: Molecular beam epitaxy; Quantum wells; Electron transport

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Gaspe, C. K. (2013). Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb. (Doctoral Dissertation). University of Oklahoma. Retrieved from http://hdl.handle.net/11244/318770

Chicago Manual of Style (16^th Edition):

Gaspe, Chomani Kishanika. “Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb.” 2013. Doctoral Dissertation, University of Oklahoma. Accessed January 18, 2021. http://hdl.handle.net/11244/318770.

MLA Handbook (7^th Edition):

Gaspe, Chomani Kishanika. “Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb.” 2013. Web. 18 Jan 2021.

Vancouver:

Gaspe CK. Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb. [Internet] [Doctoral dissertation]. University of Oklahoma; 2013. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/11244/318770.

Council of Science Editors:

Gaspe CK. Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb. [Doctoral Dissertation]. University of Oklahoma; 2013. Available from: http://hdl.handle.net/11244/318770

Addis Ababa University

13. Menberu, Mengesha. QUANTUM MECHANICAL AND OPTICAL PROPERTIES OF ASYMMETRIC DOUBLE WELLS AND TWO ELECTRON QUANTUM DOTS .

Degree: 2013, Addis Ababa University

URL: http://etd.aau.edu.et/dspace/handle/123456789/1332

► In this dissertation the energy of the ground and excited state of symmetric and asymmetric parabolic double quantum wells (DQWs) are investigated by using our… (more)

▼ In this dissertation the energy of the ground and excited state of symmetric and asymmetric parabolic double quantum wells (DQWs) are investigated by using our formulated trial wave functions and the Hamiltonian. For symmetric DQWs, calculation of the frequency corresponding to the ground state energy splitting describes that tunneling takes place in the duration of short time when the frequency of the photon is in tera hertz (THz) region. However the tunneling time for excited state energy splitting is shorter than that of the ground state energy splitting due to the decrement of barrier width for parabolic DQWs. The asymmetric DQWs with resonant levels (the ground state energy level in one well coincides with the first excited state energy in another well) is analyzed. The splitting of these levels and the tunneling times are calculated. If the typical life time of the excited state is much smaller than the tunneling time between wells, the charged particle can radiate as the result of quantum transition from the excited state to the ground state. In the opposite case, the asymmetric DQWs can be treated as a metastable excited nano-system regardless of that the dipole transition from the excited state to the ground state is permitted. The life time of this metastable state can be considerably reduced by putting it in the resonant cavity. The possibility of coherent radiation of an ensemble of asymmetric DQWs is discussed. Moreover the analytical expressions of absorption coefficients and refractive index changes for parabolic asymmetric DQWs have been determined using the compact density matrix approach. The calculation shows that at some frequency range the asymmetric DQWs become left handed media with negative values of total refractive vii index. This behavior of the asymmetric DQWs at some frequency range is of great importance for metamaterial science. The low lying energy levels of 3D two electron QDs with parabolic confinement and rigid confinement (the wave functions vanish at the surface of the QD) are obtained by the variational method and perturbation techniques. The quantum states of the QD are divided in to the para- and ortho- states like in the theory of helium atom. Our numerical calculations show that the energy differences between the ground and first excited states of the para- dots are practically linear function of the coupling constant . This allows one to propose the phenomenological formulas for the energy levels as a function of a typical size of QD. The spin function of the para-dot is singlet with total spin zero. One of the spin function of the ortho-dot is not factorizable symmetric combination. The two functions relate to the entanglement states, which are important for quantum information processing. The lowest transition energy of one and two electron GaAs QDs are calculated by solving the corresponding Schr¨odinger equation. For the two electron GaAs QD we calculated the real and imaginary parts of the dielectric constant, the refractive index, and the absorption coefficients as… Advisors/Committee Members: Prof. Malnev.V (advisor).

Subjects/Keywords: quantum dots; symmetric and asymmetric parabolic double quantum wells

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Menberu, M. (2013). QUANTUM MECHANICAL AND OPTICAL PROPERTIES OF ASYMMETRIC DOUBLE WELLS AND TWO ELECTRON QUANTUM DOTS . (Thesis). Addis Ababa University. Retrieved from http://etd.aau.edu.et/dspace/handle/123456789/1332

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Menberu, Mengesha. “QUANTUM MECHANICAL AND OPTICAL PROPERTIES OF ASYMMETRIC DOUBLE WELLS AND TWO ELECTRON QUANTUM DOTS .” 2013. Thesis, Addis Ababa University. Accessed January 18, 2021. http://etd.aau.edu.et/dspace/handle/123456789/1332.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Menberu, Mengesha. “QUANTUM MECHANICAL AND OPTICAL PROPERTIES OF ASYMMETRIC DOUBLE WELLS AND TWO ELECTRON QUANTUM DOTS .” 2013. Web. 18 Jan 2021.

Vancouver:

Menberu M. QUANTUM MECHANICAL AND OPTICAL PROPERTIES OF ASYMMETRIC DOUBLE WELLS AND TWO ELECTRON QUANTUM DOTS . [Internet] [Thesis]. Addis Ababa University; 2013. [cited 2021 Jan 18]. Available from: http://etd.aau.edu.et/dspace/handle/123456789/1332.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Menberu M. QUANTUM MECHANICAL AND OPTICAL PROPERTIES OF ASYMMETRIC DOUBLE WELLS AND TWO ELECTRON QUANTUM DOTS . [Thesis]. Addis Ababa University; 2013. Available from: http://etd.aau.edu.et/dspace/handle/123456789/1332

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of New Mexico

14. Barve, Ajit. Heterostructure engineering of quantum dots-in-a-well infrared photodetectors.

Degree: Electrical and Computer Engineering, 2012, University of New Mexico

URL: http://hdl.handle.net/1928/20804

► Three of the most important characteristics of third-generation imaging systems are high operating temperature, multispectral operation, and large format arrays. The quantum dot infrared photodetector… (more)

▼ Three of the most important characteristics of third-generation imaging systems are high operating temperature, multispectral operation, and large format arrays. The quantum dot infrared photodetector technology, owing to the three-dimensional confinement of carriers, the richness of the electronic spectra in quantum dots, and the mature III-V based fabrication technology, satisfy these requirements. This work focuses on quantum dots-in-a-well (DWELL) detectors in which InAs quantum dots are embedded in a compressively strained InGaAs-GaAs quantum well. Barriers separating two stacks of quantum dots can be GaAs, AlGaAs or a combination of different materials, with 'smart barriers'. Motivation for this work is to improve the understanding and the performance of DWELL detectors to achieve high temperature operation and high signal to noise ratio for these detectors for given wavelength requirements, at applied biases compatible with CMOS technology. This aim has been pursued on three fronts: barrier designs, device designs and material systems. Smart barriers, such as resonant tunneling barriers have been demonstrated to improve the signal to noise ratio of the detector by reducing the dark current significantly, while keeping the photocurrent constant. A systematic experimental study has been conducted for understanding the effect of different types of transitions on the properties of DWELL detectors, which showed that bound to quasibound (B-Q) type of transitions optimize the device performance at moderate bias levels. The performance of B-Q type of architectures has been substantially improved by the use of confinement enhancing (CE) barriers that combine the advantages of high energy barriers, such as low dark current and high signal to noise ratio, with those of low energy barriers, such as high responsivity and longer peak wavelengths at low bias operation. A new type of detector, a quantum dot based quantum cascade detector, has been proposed and implemented. QD-QCD exhibits a strong photovoltaic action, leading to strong performance at zero bias, by the virtue of internal electric field generated by the quantum cascade action in the barrier. The zero bias operation, combined with record low photoconductive gains for any quantum dot detectors, makes QD QCD very attractive for focal plane array applications. For improved understanding, theoretical modeling of quantum dot strain, based on atomistic valence force field method as well as transport simulations of general heterostructure detectors with drift-diffusion model have been developed. The transport simulation results indicate the presence of a strong space charge region forming between the highly n-doped contact regions and non-intentionally doped barrier regions, which makes the internal electric field highly nonlinear in space. This has been verified by systematic experiments, in which effects of this electric field nonlinearity on the device parameters have been studied. This work would enable a device designer to choose different device… Advisors/Committee Members: Krishna, Sanjay, Brueck, Steven, Malloy, Kevin, Lester, Luke, Krishna, Sanjay.

Subjects/Keywords: Infrared detectors.; Quantum dots.; Quantum wells.; Infrared array detectors.; Heterostructures.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Barve, A. (2012). Heterostructure engineering of quantum dots-in-a-well infrared photodetectors. (Doctoral Dissertation). University of New Mexico. Retrieved from http://hdl.handle.net/1928/20804

Chicago Manual of Style (16^th Edition):

Barve, Ajit. “Heterostructure engineering of quantum dots-in-a-well infrared photodetectors.” 2012. Doctoral Dissertation, University of New Mexico. Accessed January 18, 2021. http://hdl.handle.net/1928/20804.

MLA Handbook (7^th Edition):

Barve, Ajit. “Heterostructure engineering of quantum dots-in-a-well infrared photodetectors.” 2012. Web. 18 Jan 2021.

Vancouver:

Barve A. Heterostructure engineering of quantum dots-in-a-well infrared photodetectors. [Internet] [Doctoral dissertation]. University of New Mexico; 2012. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/1928/20804.

Council of Science Editors:

Barve A. Heterostructure engineering of quantum dots-in-a-well infrared photodetectors. [Doctoral Dissertation]. University of New Mexico; 2012. Available from: http://hdl.handle.net/1928/20804

University of New Mexico

15. Jang, Woo-Yong. Data compressive paradigm for spectral sensing and classification using electrically tunable detectors.

Degree: Electrical and Computer Engineering, 2013, University of New Mexico

URL: http://hdl.handle.net/1928/22045

► This dissertation contains three major parts: (1) demonstration of the algorithmic spectrometry in the mid-IR sensing regime using spectrally tunable quantum dots-in-a-well (DWELL) IR detector… (more)

Subjects/Keywords: Infrared detectors.; Quantum wells.; Quantum dots.; Data compression (Computer science)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Jang, W. (2013). Data compressive paradigm for spectral sensing and classification using electrically tunable detectors. (Doctoral Dissertation). University of New Mexico. Retrieved from http://hdl.handle.net/1928/22045

Chicago Manual of Style (16^th Edition):

Jang, Woo-Yong. “Data compressive paradigm for spectral sensing and classification using electrically tunable detectors.” 2013. Doctoral Dissertation, University of New Mexico. Accessed January 18, 2021. http://hdl.handle.net/1928/22045.

MLA Handbook (7^th Edition):

Jang, Woo-Yong. “Data compressive paradigm for spectral sensing and classification using electrically tunable detectors.” 2013. Web. 18 Jan 2021.

Vancouver:

Jang W. Data compressive paradigm for spectral sensing and classification using electrically tunable detectors. [Internet] [Doctoral dissertation]. University of New Mexico; 2013. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/1928/22045.

Council of Science Editors:

Jang W. Data compressive paradigm for spectral sensing and classification using electrically tunable detectors. [Doctoral Dissertation]. University of New Mexico; 2013. Available from: http://hdl.handle.net/1928/22045

University of Cambridge

16. Jaliel, Gulzat. Experimental Realisation of Energy Harvesters built from Quantum Dots and Quantum Wells.

Degree: PhD, 2020, University of Cambridge

URL: https://www.repository.cam.ac.uk/handle/1810/304961

► This thesis starts with an introduction to the background semiconductor physics required for carrying out this PhD research. I have then presented the work that… (more)

▼ This thesis starts with an introduction to the background semiconductor physics required for carrying out this PhD research. I have then presented the work that demonstrates, both theoretically and experimentally, an energy harvester built from two resonant-tunnelling quantum dots. A device, proposed by Jordan et al. [1], harvests energy from an area of 90 μ m2 of a two-dimensional electron gas (2DEG), using the energy-selective transport of electrons through a pair of quantum dots. It has proven to be an effective technique for harvesting energy at the micro/nano scales. Our energy harvester can generate a power of 0.13fW in an estimated efficiency with a lower bound around 0.1hC. Our theoretical model (not affected by limitations of the Wiedemann- Franz law) suggests the actual efficiency to be about 0.5hC. Experimental observations of thermal power, voltage and efficiency at different values of IHeat and RLoad have also been reproduced by this model. There are small quantitative differences between experimental results and theoretical modelling in terms of parameters, such as electrical temperatures and energy level difference. This may be explained by asymmetric barriers, accidental degeneracies or the lifetime-broadened width of the quantum dots, as well as charging effects in the non-linear regime. Overall, this proof-of-principle experiment demonstrates the basic soundness of the theory of mesoscopic energy harvesting with energy filtering techniques at the quantum level, realising a heat engine. Then we investigate the thermometry study of such a quantum-dot energy-harvester device. This part of the thesis describes the characterisation and performance of a non- invasive single-electron thermometer, and extracts the electrical temperatures via three methods as below. First, we introduced the extracting of the electrical temperatures through fitting the differential-conductance peaks with theoretical models. The advantage of this method is that the quantum dot can directly serve as a thermometer. The disadvantage is that the excitation voltage, applied to trigger the currents through quantum dots, will unavoidably heat the device. Then we introduce the use of the quantum point contact (qpc) to extract temperatures via monitoring the changes in electrostatic potential of a one-dimensional channel close to the quantum dot. It is easier to set up this measurement, and the signal through a qpc is usually several times greater than the current through a quantum dot, which means that the qpc thermometer is much more sensitive than the quantum-dot thermometer for a similar experimental set-up. The third method is to use the Mott relation as an insight into the thermometry of our energy-harvester device. It is supposed to have higher accuracy compared to previous thermometers, because of the same sets of circuits and data used as the thermopower measurements. Then I have presented our attempt to experimentally demonstrate the theoretical proposal of building an energy harvester with two resonant-tunnelling quantum…

Subjects/Keywords: energy harvesters; quantum dots; quantum wells; thermoelectricity; thermometer; semiconductor; GaAs/GaAlAs; heat engine

Record Details Similar Records Cite « Share

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Jaliel, G. (2020). Experimental Realisation of Energy Harvesters built from Quantum Dots and Quantum Wells. (Doctoral Dissertation). University of Cambridge. Retrieved from https://www.repository.cam.ac.uk/handle/1810/304961

Chicago Manual of Style (16^th Edition):

Jaliel, Gulzat. “Experimental Realisation of Energy Harvesters built from Quantum Dots and Quantum Wells.” 2020. Doctoral Dissertation, University of Cambridge. Accessed January 18, 2021. https://www.repository.cam.ac.uk/handle/1810/304961.

MLA Handbook (7^th Edition):

Jaliel, Gulzat. “Experimental Realisation of Energy Harvesters built from Quantum Dots and Quantum Wells.” 2020. Web. 18 Jan 2021.

Vancouver:

Jaliel G. Experimental Realisation of Energy Harvesters built from Quantum Dots and Quantum Wells. [Internet] [Doctoral dissertation]. University of Cambridge; 2020. [cited 2021 Jan 18]. Available from: https://www.repository.cam.ac.uk/handle/1810/304961.

Council of Science Editors:

Jaliel G. Experimental Realisation of Energy Harvesters built from Quantum Dots and Quantum Wells. [Doctoral Dissertation]. University of Cambridge; 2020. Available from: https://www.repository.cam.ac.uk/handle/1810/304961

University of Cambridge

17. Jaliel, Gulzat. Experimental realisation of energy harvesters built from quantum dots and quantum wells.

Degree: PhD, 2020, University of Cambridge

URL: https://doi.org/10.17863/CAM.52042 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.805865

► This thesis starts with an introduction to the background semiconductor physics required for carrying out this PhD research. I have then presented the work that… (more)

▼ This thesis starts with an introduction to the background semiconductor physics required for carrying out this PhD research. I have then presented the work that demonstrates, both theoretically and experimentally, an energy harvester built from two resonant-tunnelling quantum dots. A device, proposed by Jordan et al., harvests energy from an area of 90 μ m2 of a two-dimensional electron gas (2DEG), using the energy-selective transport of electrons through a pair of quantum dots. It has proven to be an effective technique for harvesting energy at the micro/nano scales. Our energy harvester can generate a power of 0.13fW in an estimated efficiency with a lower bound around 0.1hC. Our theoretical model (not affected by limitations of the Wiedemann- Franz law) suggests the actual efficiency to be about 0.5hC. Experimental observations of thermal power, voltage and efficiency at different values of IHeat and RLoad have also been reproduced by this model. There are small quantitative differences between experimental results and theoretical modelling in terms of parameters, such as electrical temperatures and energy level difference. This may be explained by asymmetric barriers, accidental degeneracies or the lifetime-broadened width of the quantum dots, as well as charging effects in the non-linear regime. Overall, this proof-of-principle experiment demonstrates the basic soundness of the theory of mesoscopic energy harvesting with energy filtering techniques at the quantum level, realising a heat engine. Then we investigate the thermometry study of such a quantum-dot energy-harvester device. This part of the thesis describes the characterisation and performance of a non- invasive single-electron thermometer, and extracts the electrical temperatures via three methods as below. First, we introduced the extracting of the electrical temperatures through fitting the differential-conductance peaks with theoretical models. The advantage of this method is that the quantum dot can directly serve as a thermometer. The disadvantage is that the excitation voltage, applied to trigger the currents through quantum dots, will unavoidably heat the device. Then we introduce the use of the quantum point contact (qpc) to extract temperatures via monitoring the changes in electrostatic potential of a one-dimensional channel close to the quantum dot. It is easier to set up this measurement, and the signal through a qpc is usually several times greater than the current through a quantum dot, which means that the qpc thermometer is much more sensitive than the quantum-dot thermometer for a similar experimental set-up. The third method is to use the Mott relation as an insight into the thermometry of our energy-harvester device. It is supposed to have higher accuracy compared to previous thermometers, because of the same sets of circuits and data used as the thermopower measurements. Then I have presented our attempt to experimentally demonstrate the theoretical proposal of building an energy harvester with two resonant-tunnelling quantum wells…

Subjects/Keywords: energy harvesters; quantum dots; quantum wells; thermoelectricity; thermometer; semiconductor; GaAs/GaAlAs; heat engine

Record Details Similar Records Cite « Share

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Jaliel, G. (2020). Experimental realisation of energy harvesters built from quantum dots and quantum wells. (Doctoral Dissertation). University of Cambridge. Retrieved from https://doi.org/10.17863/CAM.52042 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.805865

Chicago Manual of Style (16^th Edition):

Jaliel, Gulzat. “Experimental realisation of energy harvesters built from quantum dots and quantum wells.” 2020. Doctoral Dissertation, University of Cambridge. Accessed January 18, 2021. https://doi.org/10.17863/CAM.52042 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.805865.

MLA Handbook (7^th Edition):

Jaliel, Gulzat. “Experimental realisation of energy harvesters built from quantum dots and quantum wells.” 2020. Web. 18 Jan 2021.

Vancouver:

Jaliel G. Experimental realisation of energy harvesters built from quantum dots and quantum wells. [Internet] [Doctoral dissertation]. University of Cambridge; 2020. [cited 2021 Jan 18]. Available from: https://doi.org/10.17863/CAM.52042 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.805865.

Council of Science Editors:

Jaliel G. Experimental realisation of energy harvesters built from quantum dots and quantum wells. [Doctoral Dissertation]. University of Cambridge; 2020. Available from: https://doi.org/10.17863/CAM.52042 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.805865

University of Texas – Austin

18. Heller, Richard Dean. Short-wavelength InAl(x)Ga(1-x)P quantum well lasers and InP quantum dot coupled to strained InAl(x)Ga(1-x)P quantum well lasers grown by MOCVD.

Degree: PhD, Electrical and Computer Engineering, 2003, University of Texas – Austin

URL: http://hdl.handle.net/2152/640

► III-phosphide self-assembled quantum dot (SAQD) structures offer the ability to realize injection lasers operating in the visible wavelength region from as short wavelength as yellow… (more)

▼ III-phosphide self-assembled quantum dot (SAQD) structures offer the ability to realize injection lasers operating in the visible wavelength region from as short wavelength as yellow to deep red with superior performance characteristics, such as low threshold current density and high characteristic temperature. Previously, results of InP QD lasers grown by MOCVD that lased optically pumped pulsed at 300K and continuous-wave (CW) at 77K were described. Further, by incorporating an auxiliary InGaP quantum well (QW) coupled to the QD layers (QW + QD) by a InAlGaP barrier layer due to resonant tunneling, novel QW + QD lasers can be realized with better carrier collection, better thermalization of carriers, and lateral rearrangement of carriers in the QWs; thus giving considerably better laser performance characteristics. The effects of coupling the InP QD states to the electronic states of InGaP QWs will be studied especially with regards to improving device performance and decreasing the wavelength of operation. Further, the effect of adding strained InGaP QWs underneath InP SAQDs will be studied by performing surface morphology analysis. There are several different parameters that affect the growth and the QD areal density was optimized from about 1x1010 cm-2 to as much as 3x1010 cm-2. These InP QD coupled to InGaP QW active regions have been incorporated into various laser separate-confinement active regions. The continuous-wave 300K laser operation of an In0.49Al1-xP/In0.49(AlxGa1-x)0.51P/In0.49Ga0.51P/InP QD coupled to QW laser diode was demonstrated lasing at a visible wavelength (654nm); this is the first reported CW 300K injection laser using InP QDs. Further, by using further novel devices, an InP QD coupled to InGaP QW injection laser was grown and demonstrated at 300K with a lasing wavelength of 607nm, the shortest reported wavelength for any laser diode grown on GaAs. Based on various recombination spectra, it is obvious that the gain peaks at the quantum dot excited state, thus further indicating the coupling of the quantum well states to the quantum dot states. The growth and properties of these novel QW+QD injection lasers will be discussed. Advisors/Committee Members: Dupuis, Russell (advisor).

Subjects/Keywords: Injection lasers; Quantum dots; Quantum wells

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APA (6^th Edition):

Heller, R. D. (2003). Short-wavelength InAl(x)Ga(1-x)P quantum well lasers and InP quantum dot coupled to strained InAl(x)Ga(1-x)P quantum well lasers grown by MOCVD. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/640

Chicago Manual of Style (16^th Edition):

Heller, Richard Dean. “Short-wavelength InAl(x)Ga(1-x)P quantum well lasers and InP quantum dot coupled to strained InAl(x)Ga(1-x)P quantum well lasers grown by MOCVD.” 2003. Doctoral Dissertation, University of Texas – Austin. Accessed January 18, 2021. http://hdl.handle.net/2152/640.

MLA Handbook (7^th Edition):

Heller, Richard Dean. “Short-wavelength InAl(x)Ga(1-x)P quantum well lasers and InP quantum dot coupled to strained InAl(x)Ga(1-x)P quantum well lasers grown by MOCVD.” 2003. Web. 18 Jan 2021.

Vancouver:

Heller RD. Short-wavelength InAl(x)Ga(1-x)P quantum well lasers and InP quantum dot coupled to strained InAl(x)Ga(1-x)P quantum well lasers grown by MOCVD. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2003. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/2152/640.

Council of Science Editors:

Heller RD. Short-wavelength InAl(x)Ga(1-x)P quantum well lasers and InP quantum dot coupled to strained InAl(x)Ga(1-x)P quantum well lasers grown by MOCVD. [Doctoral Dissertation]. University of Texas – Austin; 2003. Available from: http://hdl.handle.net/2152/640

19. Ευαγγέλου, Σοφία. Μη-γραμμική οπτική μίξη τεσσάρων κυμάτων σε ημιαγώγιμα κβαντικά πηγάδια.

Degree: 2009, University of Patras

URL: http://nemertes.lis.upatras.gr/jspui/handle/10889/2707

►

Στη διπλωματική εργασία αυτή μελετάμε αναλυτικά και υπολογιστικά το φαινόμενο της μίξης τεσσάρων κυμάτων σε δια-υποζωνικές μεταβάσεις ενός συστήματος που αποτελείται από δομές συμμετρικών ημιαγώγιμων… (more)

▼

Στη διπλωματική εργασία αυτή μελετάμε αναλυτικά και υπολογιστικά το φαινόμενο της μίξης τεσσάρων κυμάτων σε δια-υποζωνικές μεταβάσεις ενός συστήματος που αποτελείται από δομές συμμετρικών ημιαγώγιμων κβαντικών πηγαδιών. Στο θεωρητικό μοντέλο παίρνουμε υπόψη δύο υποζώνες ενός ημιαγώγιμου κβαντικού πηγαδιού που αλληλεπιδρούν ταυτόχρονα με ένα ισχυρό ηλεκτρομαγνητικό πεδίο (πεδίο σύζευξης) καθορισμένης συχνότητας και ένα ασθενές ηλεκτρομαγνητικό πεδίο (πεδίο ιχνηθέτη) μεταβλητής συχνότητας. Περά από τη σύμφωνη αλληλεπίδραση των ηλεκτρομαγνητικών πεδίων με τα κβαντικά πηγάδια στη θεωρία μας συμπεριλαμβάνουμε και τα φαινόμενα των αλληλεπιδράσεων ηλεκτρονίου-ηλεκτρονίου. Για την περιγραφή της δυναμικής του συστήματος χρησιμοποιούμε τις εξισώσεις του πίνακα πυκνότητας που προκύπτουν, κάτω από κατάλληλες παραδοχές, από τις γενικευμένες μη-γραμμικές εξισώσεις Bloch. Οι εξισώσεις αυτές επιλύονται αριθμητικά για μια συγκεκριμένη δομή διπλού ημιαγώγιμου κβαντικού πηγαδιού GaAs/AlGaAs στην οποία μεταβάλλουμε την επιφανειακή πυκνότητα ηλεκτρονίων. Παρουσιάζουμε αποτελέσματα και για συνεχή και για παλμικά ηλεκτρομαγνητικά πεδία και δείχνουμε ότι τόσο η ένταση όσο και η μορφή του φάσματος της μίξης τεσσάρων κυμάτων εξαρτάται σημαντικά από την επιφανειακή πυκνότητα ηλεκτρονίων, τη συχνότητα και την ένταση του πεδίου σύζευξης, και στην περίπτωση των παλμικών πεδίων από τη σειρά της χρονικής επιβολής των παλμών.

In this diploma thesis we study analytically and numerically the phenomenon of four-wave mixing in intersubband transitions of a symmetric double quantum well structure. In the theoretical model we consider two quantum well subbands that are coupled by a strong coupling electromagnetic field with fixed frequency and a weak probe electromagnetic field with varying frequency. We consider the coherent interaction of the electromagnetic fields with the quantum wells taking into account the effects of electron-electron interactions. For the description of the system dynamics we use the density matrix equations obtained from the generalized nonlinear Bloch equations. These equations are solved numerically for a realistic semiconductor quantum well structure GaAs/AlGaAs with varying electron sheet density. We present results for both continuous and pulsed electromagnetic fields and show that both the intensity and the shape of the four-wave mixing spectrum can be significantly dependent on electron sheet density, on the frequency and the intensity of the coupling field, and in the case of pulsed fields on the delay between the fields.

Advisors/Committee Members: Πασπαλάκης, Εμμανουήλ, Evangelou, Sofia, Paspalakis, Emmanouel.

Subjects/Keywords: Μη-γραμμική οπτική; Κβαντικά πηγάδια; 537.622 6; Nonlinear optics; Quantum wells

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APA (6^th Edition):

Ευαγγέλου, �. (2009). Μη-γραμμική οπτική μίξη τεσσάρων κυμάτων σε ημιαγώγιμα κβαντικά πηγάδια. (Masters Thesis). University of Patras. Retrieved from http://nemertes.lis.upatras.gr/jspui/handle/10889/2707

Chicago Manual of Style (16^th Edition):

Ευαγγέλου, Σοφία. “Μη-γραμμική οπτική μίξη τεσσάρων κυμάτων σε ημιαγώγιμα κβαντικά πηγάδια.” 2009. Masters Thesis, University of Patras. Accessed January 18, 2021. http://nemertes.lis.upatras.gr/jspui/handle/10889/2707.

MLA Handbook (7^th Edition):

Ευαγγέλου, Σοφία. “Μη-γραμμική οπτική μίξη τεσσάρων κυμάτων σε ημιαγώγιμα κβαντικά πηγάδια.” 2009. Web. 18 Jan 2021.

Vancouver:

Ευαγγέλου �. Μη-γραμμική οπτική μίξη τεσσάρων κυμάτων σε ημιαγώγιμα κβαντικά πηγάδια. [Internet] [Masters thesis]. University of Patras; 2009. [cited 2021 Jan 18]. Available from: http://nemertes.lis.upatras.gr/jspui/handle/10889/2707.

Council of Science Editors:

Ευαγγέλου �. Μη-γραμμική οπτική μίξη τεσσάρων κυμάτων σε ημιαγώγιμα κβαντικά πηγάδια. [Masters Thesis]. University of Patras; 2009. Available from: http://nemertes.lis.upatras.gr/jspui/handle/10889/2707

University of Bath

20. Harris, C. I. Optical studies of impurities in quantum wells.

Degree: PhD, 1991, University of Bath

URL: https://researchportal.bath.ac.uk/en/studentthesis/optical-studies-of-impurities-in-quantum-wells(55bbb8a4-db64-44c6-a10f-184d9116a777).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292840

Subjects/Keywords: 530.41; Semiconductor quantum wells

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Harris, C. I. (1991). Optical studies of impurities in quantum wells. (Doctoral Dissertation). University of Bath. Retrieved from https://researchportal.bath.ac.uk/en/studentthesis/optical-studies-of-impurities-in-quantum-wells(55bbb8a4-db64-44c6-a10f-184d9116a777).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292840

Chicago Manual of Style (16^th Edition):

Harris, C I. “Optical studies of impurities in quantum wells.” 1991. Doctoral Dissertation, University of Bath. Accessed January 18, 2021. https://researchportal.bath.ac.uk/en/studentthesis/optical-studies-of-impurities-in-quantum-wells(55bbb8a4-db64-44c6-a10f-184d9116a777).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292840.

MLA Handbook (7^th Edition):

Harris, C I. “Optical studies of impurities in quantum wells.” 1991. Web. 18 Jan 2021.

Vancouver:

Harris CI. Optical studies of impurities in quantum wells. [Internet] [Doctoral dissertation]. University of Bath; 1991. [cited 2021 Jan 18]. Available from: https://researchportal.bath.ac.uk/en/studentthesis/optical-studies-of-impurities-in-quantum-wells(55bbb8a4-db64-44c6-a10f-184d9116a777).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292840.

Council of Science Editors:

Harris CI. Optical studies of impurities in quantum wells. [Doctoral Dissertation]. University of Bath; 1991. Available from: https://researchportal.bath.ac.uk/en/studentthesis/optical-studies-of-impurities-in-quantum-wells(55bbb8a4-db64-44c6-a10f-184d9116a777).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292840

Australian National University

21. Fonseka, H. Aruni. Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications .

Degree: 2015, Australian National University

URL: http://hdl.handle.net/1885/16525

► Indium Phosphide (InP) forms a cornerstone amongst direct band-gap III-V compound semiconductors with the possibility for a wide range of other III-V alloys to be… (more)

▼ Indium Phosphide (InP) forms a cornerstone amongst direct band-gap III-V compound semiconductors with the possibility for a wide range of other III-V alloys to be lattice matched with it. It is commonly used in optical communications related device applications, high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). The very low surface recombination velocity of InP has made its nanowire counterpart a standout amongst nanowires of other III-V materials with successful demonstrations in nanowire solar cells, lasers and single photon sources. Considerable progress has been made in terms of InP nanowire growth in the past decade. Defect-free wurtzite (WZ) phase nanowires with good optical quality have been achieved on InP (111)B substrates. However, there are unexplored areas related to nanowire heterostructures that may hold promise for future device applications. Furthermore, InP nanowires aimed for future integrated devices need to be grown on the Si (111) substrates, and preferably on Si (100) substrates, in order to be integrated with microelectronics and other planar devices on a single chip. This dissertation presents a progressive advancement of Au seeded InP nanowire growth by MOVPE, from heterostructures grown on InP (111)B substrates to nanowire growth on Si (111) substrates and [100] oriented InP substrates. A number of diverse techniques have been employed to understand the growth process and characterise the samples. Scanning and transmission electron microscopy, atomic force microscopy, X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDX) have been used for structural and compositional analysis, while room and low temperature photoluminescence (PL) and PL mapping have been used for optical characterisation. InP-InxGa1-xAs nanowire quantum wells (QWs) emitting in the 1.3 μm optical communications wavelength region are grown on InP (111)B substrates. Detailed structural and optical analysis carried out using cross-sectional TEM (X-TEM) and PL mapping reveal asymmetric diffusion at the two interfaces of the QW, and broad, yet bright and homogenous PL emission along the complete length of the nanowire, with no emission visible from the InP nanowire core or outer barrier. The emission wavelength of the QW is tuned in the 1.3 μm range by varying the QW thickness as well as composition. The WZ phase QWs are optically modelled using the kp method. Multiple QWs comprised of three QWs and showing strong emission is also demonstrated. InP nanowire growth on Si (111) substrates has been carried out using an intermediate buffer layer. A two-step approach is used for the growth of the buffer layer and the growth parameters are optimised for both steps in order to achieve a smooth layer that covers the underlying Si substrate. It is seen that the layer fully relaxes by forming dislocations at the interface and is of (111)B polarity. Over 97% vertical nanowire yield is achieved on the buffer layers, and these nanowires are found to be…

Subjects/Keywords: Nanowires; InP; InGaAs; [100] orientation; Si substrate; Quantum Wells

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APA (6^th Edition):

Fonseka, H. A. (2015). Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/16525

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Fonseka, H Aruni. “Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications .” 2015. Thesis, Australian National University. Accessed January 18, 2021. http://hdl.handle.net/1885/16525.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Fonseka, H Aruni. “Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications .” 2015. Web. 18 Jan 2021.

Vancouver:

Fonseka HA. Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications . [Internet] [Thesis]. Australian National University; 2015. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/1885/16525.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fonseka HA. Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications . [Thesis]. Australian National University; 2015. Available from: http://hdl.handle.net/1885/16525

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Hong Kong

22. 鄭旭. Interdiffused quantum well solar cells.

Degree: 1996, University of Hong Kong

URL: http://hdl.handle.net/10722/39414

Subjects/Keywords: Quantum wells.; Solar cells.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

鄭旭. (1996). Interdiffused quantum well solar cells. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/39414

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

鄭旭. “Interdiffused quantum well solar cells.” 1996. Thesis, University of Hong Kong. Accessed January 18, 2021. http://hdl.handle.net/10722/39414.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

鄭旭. “Interdiffused quantum well solar cells.” 1996. Web. 18 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

鄭旭. Interdiffused quantum well solar cells. [Internet] [Thesis]. University of Hong Kong; 1996. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/10722/39414.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

鄭旭. Interdiffused quantum well solar cells. [Thesis]. University of Hong Kong; 1996. Available from: http://hdl.handle.net/10722/39414

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

University of Hong Kong

23. 蔡植豪. Optical modulation properties of interdiffused III-V semiconductor quantum wells.

Degree: 1996, University of Hong Kong

URL: http://hdl.handle.net/10722/33150

Subjects/Keywords: Semiconductors - Optical properties.; Quantum wells.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

蔡植豪. (1996). Optical modulation properties of interdiffused III-V semiconductor quantum wells. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/33150

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

蔡植豪. “Optical modulation properties of interdiffused III-V semiconductor quantum wells.” 1996. Thesis, University of Hong Kong. Accessed January 18, 2021. http://hdl.handle.net/10722/33150.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

蔡植豪. “Optical modulation properties of interdiffused III-V semiconductor quantum wells.” 1996. Web. 18 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

蔡植豪. Optical modulation properties of interdiffused III-V semiconductor quantum wells. [Internet] [Thesis]. University of Hong Kong; 1996. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/10722/33150.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

蔡植豪. Optical modulation properties of interdiffused III-V semiconductor quantum wells. [Thesis]. University of Hong Kong; 1996. Available from: http://hdl.handle.net/10722/33150

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

University of Hong Kong

24. Man, Wai-man. Modeling of vertical cavity surface emitting lasers.

Degree: 2000, University of Hong Kong

URL: http://hdl.handle.net/10722/33703

Subjects/Keywords: Semiconductor lasers.; Quantum wells.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Man, W. (2000). Modeling of vertical cavity surface emitting lasers. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/33703

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Man, Wai-man. “Modeling of vertical cavity surface emitting lasers.” 2000. Thesis, University of Hong Kong. Accessed January 18, 2021. http://hdl.handle.net/10722/33703.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Man, Wai-man. “Modeling of vertical cavity surface emitting lasers.” 2000. Web. 18 Jan 2021.

Vancouver:

Man W. Modeling of vertical cavity surface emitting lasers. [Internet] [Thesis]. University of Hong Kong; 2000. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/10722/33703.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Man W. Modeling of vertical cavity surface emitting lasers. [Thesis]. University of Hong Kong; 2000. Available from: http://hdl.handle.net/10722/33703

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Hong Kong

25. 沈觀洪. Antimonide based quantum-well and its application in infrared photodetector.

Degree: 1999, University of Hong Kong

URL: http://hdl.handle.net/10722/33902

Subjects/Keywords: Quantum wells.; Antimony.; Infrared detectors.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

沈觀洪.. (1999). Antimonide based quantum-well and its application in infrared photodetector. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/33902

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

沈觀洪.. “Antimonide based quantum-well and its application in infrared photodetector.” 1999. Thesis, University of Hong Kong. Accessed January 18, 2021. http://hdl.handle.net/10722/33902.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

沈觀洪.. “Antimonide based quantum-well and its application in infrared photodetector.” 1999. Web. 18 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

沈觀洪.. Antimonide based quantum-well and its application in infrared photodetector. [Internet] [Thesis]. University of Hong Kong; 1999. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/10722/33902.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

沈觀洪.. Antimonide based quantum-well and its application in infrared photodetector. [Thesis]. University of Hong Kong; 1999. Available from: http://hdl.handle.net/10722/33902

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

University of Hong Kong

26. 李德豪. Stripe quantum well waveguides using implantation induced optical confinement.

Degree: 1997, University of Hong Kong

URL: http://hdl.handle.net/10722/34336

Subjects/Keywords: Wave guides.; Quantum wells.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

李德豪. (1997). Stripe quantum well waveguides using implantation induced optical confinement. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/34336

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

李德豪. “Stripe quantum well waveguides using implantation induced optical confinement.” 1997. Thesis, University of Hong Kong. Accessed January 18, 2021. http://hdl.handle.net/10722/34336.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

李德豪. “Stripe quantum well waveguides using implantation induced optical confinement.” 1997. Web. 18 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

李德豪. Stripe quantum well waveguides using implantation induced optical confinement. [Internet] [Thesis]. University of Hong Kong; 1997. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/10722/34336.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

李德豪. Stripe quantum well waveguides using implantation induced optical confinement. [Thesis]. University of Hong Kong; 1997. Available from: http://hdl.handle.net/10722/34336

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

University of Hong Kong

27. Chan, Chu-yuen. Electronic and optical properties of interdiffused III-V semiconductorquantum well laser.

Degree: 1997, University of Hong Kong

URL: http://hdl.handle.net/10722/34403

Subjects/Keywords: Quantum wells.; Optoelectronics.; Semiconductor lasers.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Chan, C. (1997). Electronic and optical properties of interdiffused III-V semiconductorquantum well laser. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/34403

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Chan, Chu-yuen. “Electronic and optical properties of interdiffused III-V semiconductorquantum well laser.” 1997. Thesis, University of Hong Kong. Accessed January 18, 2021. http://hdl.handle.net/10722/34403.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Chan, Chu-yuen. “Electronic and optical properties of interdiffused III-V semiconductorquantum well laser.” 1997. Web. 18 Jan 2021.

Vancouver:

Chan C. Electronic and optical properties of interdiffused III-V semiconductorquantum well laser. [Internet] [Thesis]. University of Hong Kong; 1997. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/10722/34403.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chan C. Electronic and optical properties of interdiffused III-V semiconductorquantum well laser. [Thesis]. University of Hong Kong; 1997. Available from: http://hdl.handle.net/10722/34403

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Hong Kong

28. Panda, Sudhira. Quantum confined stark effect and optical properties in quantum wells.

Degree: 1998, University of Hong Kong

URL: http://hdl.handle.net/10722/35087

Subjects/Keywords: Quantum wells.; Semiconductors - Optical properties.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Panda, S. (1998). Quantum confined stark effect and optical properties in quantum wells. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/35087

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Panda, Sudhira. “Quantum confined stark effect and optical properties in quantum wells.” 1998. Thesis, University of Hong Kong. Accessed January 18, 2021. http://hdl.handle.net/10722/35087.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Panda, Sudhira. “Quantum confined stark effect and optical properties in quantum wells.” 1998. Web. 18 Jan 2021.

Vancouver:

Panda S. Quantum confined stark effect and optical properties in quantum wells. [Internet] [Thesis]. University of Hong Kong; 1998. [cited 2021 Jan 18]. Available from: http://hdl.handle.net/10722/35087.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Panda S. Quantum confined stark effect and optical properties in quantum wells. [Thesis]. University of Hong Kong; 1998. Available from: http://hdl.handle.net/10722/35087

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Lehigh University

29. Fu, Hanlin. Analysis of InGaN Quantum Wells with AlGaInN Barriers.

Degree: MS, Electrical Engineering, 2018, Lehigh University

URL: https://preserve.lehigh.edu/etd/2984

► AbstractVarious strain-compensated InGaN-AlGaInN quantum well (QW) structures are investigated by self-consistent 6-band kâp method, which considers valence band mixing, the strain effect, spontaneous and piezoelectric… (more)

Subjects/Keywords: AlGaInN Barriers; InGaN quantum wells; Electrical and Computer Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Fu, H. (2018). Analysis of InGaN Quantum Wells with AlGaInN Barriers. (Thesis). Lehigh University. Retrieved from https://preserve.lehigh.edu/etd/2984

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Fu, Hanlin. “Analysis of InGaN Quantum Wells with AlGaInN Barriers.” 2018. Thesis, Lehigh University. Accessed January 18, 2021. https://preserve.lehigh.edu/etd/2984.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Fu, Hanlin. “Analysis of InGaN Quantum Wells with AlGaInN Barriers.” 2018. Web. 18 Jan 2021.

Vancouver:

Fu H. Analysis of InGaN Quantum Wells with AlGaInN Barriers. [Internet] [Thesis]. Lehigh University; 2018. [cited 2021 Jan 18]. Available from: https://preserve.lehigh.edu/etd/2984.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fu H. Analysis of InGaN Quantum Wells with AlGaInN Barriers. [Thesis]. Lehigh University; 2018. Available from: https://preserve.lehigh.edu/etd/2984

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Manchester

30. Blenkhorn, William Eric. Optical Studies of Polar InGaN/GaN Quantum Well Structures.

Degree: 2016, University of Manchester

URL: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:299945

► The work in this thesis was submitted to The University of Manchester for the degree of Doctor of Philosophy in April 2016 by William Eric… (more)

▼ The work in this thesis was submitted to The University of Manchester for the degree of Doctor of Philosophy in April 2016 by William Eric Blenkhorn and is entitled “Optical Studies of Polar InGaN/GaN Quantum Well Structures”.In this thesis, I will present and discuss research performed on InGaN/GaN multiple quantum well (QW) structures. The results of which were taken using photoluminescence (PL) spectroscopy and PL time decay spectroscopy.In the first two experimental chapters, I report on the effects of QW growth methodology on the optical properties of c-plane InGaN/GaN QWs. I compare structures grown using the single temperature (1T), quasi-two temperature (Q2T), temperature bounced (T-bounced) and two temperature (2T) QW growth methodologies. The T-bounced and 2T structures are observed to have gross well width fluctuations (GWWF), where the QW width varies from 0 to 100 % created when the QWs are exposed to a temperature ramp. Whereas, the 1T and Q2T structures have continuous QWs with only one or two monolayer well width fluctuations. The structures with GWWFs are observed to have a larger room temperature internal quantum efficiency (RT-IQE) at low excitation conditions i.e. below efficiency droop compared to those without. The larger RT-IQE is ascribed to several factors which include an increased radiative recombination rate, increased thermal activation energy of non-radiative recombination and reduced defect density of the QWs. The effect of barrier growth temperature is also investigated. No clear trend is observed between barrier growth temperature and RT-IQE.In the last experimental chapter I report on studies of carrier localisation in InGaN/GaN QWs using resonant PL spectroscopy. The effect of carrier localisation on the independently localised electrons and holes are investigated and the resonant PL spectrum is studied in detail. The InGaN/GaN QW structure is observed to exhibit an effective mobility edge at 12 K where delocalised carriers are created above a particular excitation energy. The emission from the resonantly excited localised states which are accompanied by the emission of a longitudinal optical phonon (resonant LO feature) is investigated as a function of temperature and excitation energy. The integrated PL intensity of the resonant LO feature is observed to quench rapidly with temperature up to around 45 K, independent of excitation energy. The integrated PL intensity of the resonant LO feature is fitted to an Arrhenius model and a thermal activation energy of ∼ 1(±1) meV is extracted. This activation energy is speculated to be consistent with the localisation energy of electrons. Advisors/Committee Members: Dawson, Philip.

Subjects/Keywords: InGaN/GaN quantum wells; Carrier localisation; Internal quantum efficiency; Gross well width fluctuations; Quantum well growth methodology

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Blenkhorn, W. E. (2016). Optical Studies of Polar InGaN/GaN Quantum Well Structures. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:299945

Chicago Manual of Style (16^th Edition):

Blenkhorn, William Eric. “Optical Studies of Polar InGaN/GaN Quantum Well Structures.” 2016. Doctoral Dissertation, University of Manchester. Accessed January 18, 2021. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:299945.

MLA Handbook (7^th Edition):

Blenkhorn, William Eric. “Optical Studies of Polar InGaN/GaN Quantum Well Structures.” 2016. Web. 18 Jan 2021.

Vancouver:

Blenkhorn WE. Optical Studies of Polar InGaN/GaN Quantum Well Structures. [Internet] [Doctoral dissertation]. University of Manchester; 2016. [cited 2021 Jan 18]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:299945.

Council of Science Editors:

Blenkhorn WE. Optical Studies of Polar InGaN/GaN Quantum Well Structures. [Doctoral Dissertation]. University of Manchester; 2016. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:299945

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Open Access Theses and Dissertations