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You searched for subject:(QMSA). Showing records 1 – 6 of 6 total matches.

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NSYSU

1. Wang, Huei-Yu. The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements.

Degree: Master, Physics, 2004, NSYSU

 High efficiency components are key elements of solid-state amplifiers for wireless application. We used HEMT (high-electron-mobility transistor) to obtain high mobility 2DEGs. AlGaN makes itself… (more)

Subjects/Keywords: SdH; QMSA; Hall measurement; AlGaN

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, H. (2004). The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-152644

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Huei-Yu. “The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements.” 2004. Thesis, NSYSU. Accessed October 13, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-152644.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Huei-Yu. “The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements.” 2004. Web. 13 Oct 2019.

Vancouver:

Wang H. The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Oct 13]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-152644.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang H. The studies of AlGaN/GaN heterostructures by T-dependent and B-dependent Hall measurements. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629104-152644

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

2. Agrawal, Ashish. EXPERIMENTAL STUDY OF LOW-FIELD TRANSPORT IN HIGHLY.

Degree: MS, Electrical Engineering, 2011, Penn State University

 As Si approaches end of the roadmap, finding a new transistor technology that allows the extension of Moore’s law has become a problem of great… (more)

Subjects/Keywords: Relaxation Time Approximation; Low field transport; Arsenide Antimonides; Scattering; QMSA; Effective mass

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APA (6th Edition):

Agrawal, A. (2011). EXPERIMENTAL STUDY OF LOW-FIELD TRANSPORT IN HIGHLY. (Masters Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/11894

Chicago Manual of Style (16th Edition):

Agrawal, Ashish. “EXPERIMENTAL STUDY OF LOW-FIELD TRANSPORT IN HIGHLY.” 2011. Masters Thesis, Penn State University. Accessed October 13, 2019. https://etda.libraries.psu.edu/catalog/11894.

MLA Handbook (7th Edition):

Agrawal, Ashish. “EXPERIMENTAL STUDY OF LOW-FIELD TRANSPORT IN HIGHLY.” 2011. Web. 13 Oct 2019.

Vancouver:

Agrawal A. EXPERIMENTAL STUDY OF LOW-FIELD TRANSPORT IN HIGHLY. [Internet] [Masters thesis]. Penn State University; 2011. [cited 2019 Oct 13]. Available from: https://etda.libraries.psu.edu/catalog/11894.

Council of Science Editors:

Agrawal A. EXPERIMENTAL STUDY OF LOW-FIELD TRANSPORT IN HIGHLY. [Masters Thesis]. Penn State University; 2011. Available from: https://etda.libraries.psu.edu/catalog/11894


University of Notre Dame

3. Kejia Wang. MBE Growth and Characterization of Indium Nitride for Device Applications</h1>.

Degree: PhD, Electrical Engineering, 2008, University of Notre Dame

  In this work, high quality InN films grown on GaN substrates using RF plasma assisted Molecular Beam Epitaxy (MBE) are reported and the structural,… (more)

Subjects/Keywords: mobility; MBE; device; InN; characterization; QMSA

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APA (6th Edition):

Wang, K. (2008). MBE Growth and Characterization of Indium Nitride for Device Applications</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/sn009w05j3d

Chicago Manual of Style (16th Edition):

Wang, Kejia. “MBE Growth and Characterization of Indium Nitride for Device Applications</h1>.” 2008. Doctoral Dissertation, University of Notre Dame. Accessed October 13, 2019. https://curate.nd.edu/show/sn009w05j3d.

MLA Handbook (7th Edition):

Wang, Kejia. “MBE Growth and Characterization of Indium Nitride for Device Applications</h1>.” 2008. Web. 13 Oct 2019.

Vancouver:

Wang K. MBE Growth and Characterization of Indium Nitride for Device Applications</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2008. [cited 2019 Oct 13]. Available from: https://curate.nd.edu/show/sn009w05j3d.

Council of Science Editors:

Wang K. MBE Growth and Characterization of Indium Nitride for Device Applications</h1>. [Doctoral Dissertation]. University of Notre Dame; 2008. Available from: https://curate.nd.edu/show/sn009w05j3d

4. Cunningham, Thiess. Quantitative Mobility Spectrum Analysis.

Degree: 2013

Subjects/Keywords: QMSA; III-V; heterostructures; III-V on silicon; SEMATECH; Cunningham; Droopad

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APA (6th Edition):

Cunningham, T. (2013). Quantitative Mobility Spectrum Analysis. (Thesis). [No school.] Retrieved from http://hdl.handle.net/2249.1/62717

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No school.

Chicago Manual of Style (16th Edition):

Cunningham, Thiess. “Quantitative Mobility Spectrum Analysis.” 2013. Thesis, [No school]. Accessed October 13, 2019. http://hdl.handle.net/2249.1/62717.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No school.

MLA Handbook (7th Edition):

Cunningham, Thiess. “Quantitative Mobility Spectrum Analysis.” 2013. Web. 13 Oct 2019.

Vancouver:

Cunningham T. Quantitative Mobility Spectrum Analysis. [Internet] [Thesis]. [No school]; 2013. [cited 2019 Oct 13]. Available from: http://hdl.handle.net/2249.1/62717.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No school.

Council of Science Editors:

Cunningham T. Quantitative Mobility Spectrum Analysis. [Thesis]. [No school]; 2013. Available from: http://hdl.handle.net/2249.1/62717

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No school.


University of Western Australia

5. Tsen, Gordon Keen Onn. Investigation of molecular beam epitaxy grown p-type mercury cadmium telluride for infrared detector applications.

Degree: PhD, 2010, University of Western Australia

[Truncated abstract] HgCdTe, a ternary semiconductor compound with a high technological importance, is the material-of-choice for the fabrication of single and multi-element photon detectors utilised… (more)

Subjects/Keywords: Hall effect; Mercury cadmium tellurides; Semiconductor doping; Molecular beam epitaxy; Infrared detectors; HgCdTe; p-type; MBE; Arsenic; QMSA; Annealing; Doping; Hall measurements

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tsen, G. K. O. (2010). Investigation of molecular beam epitaxy grown p-type mercury cadmium telluride for infrared detector applications. (Doctoral Dissertation). University of Western Australia. Retrieved from http://repository.uwa.edu.au:80/R/?func=dbin-jump-full&object_id=29661&local_base=GEN01-INS01

Chicago Manual of Style (16th Edition):

Tsen, Gordon Keen Onn. “Investigation of molecular beam epitaxy grown p-type mercury cadmium telluride for infrared detector applications.” 2010. Doctoral Dissertation, University of Western Australia. Accessed October 13, 2019. http://repository.uwa.edu.au:80/R/?func=dbin-jump-full&object_id=29661&local_base=GEN01-INS01.

MLA Handbook (7th Edition):

Tsen, Gordon Keen Onn. “Investigation of molecular beam epitaxy grown p-type mercury cadmium telluride for infrared detector applications.” 2010. Web. 13 Oct 2019.

Vancouver:

Tsen GKO. Investigation of molecular beam epitaxy grown p-type mercury cadmium telluride for infrared detector applications. [Internet] [Doctoral dissertation]. University of Western Australia; 2010. [cited 2019 Oct 13]. Available from: http://repository.uwa.edu.au:80/R/?func=dbin-jump-full&object_id=29661&local_base=GEN01-INS01.

Council of Science Editors:

Tsen GKO. Investigation of molecular beam epitaxy grown p-type mercury cadmium telluride for infrared detector applications. [Doctoral Dissertation]. University of Western Australia; 2010. Available from: http://repository.uwa.edu.au:80/R/?func=dbin-jump-full&object_id=29661&local_base=GEN01-INS01


Texas State University – San Marcos

6. Cunningham, Thiess H. Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon.

Degree: MS, Physics, 2012, Texas State University – San Marcos

 The continued scaling of Si CMOS devices as had been practiced by the electronics industry has reached the point where, alternative solutions to the conventional… (more)

Subjects/Keywords: QMSA; III-V; Heterostructures; III-V on Silicon; SEMATECH; Cunningham; Droopad; Metal oxide semiconductors, Complementary; Molecular beam epitaxy; Heterostructures; Metal oxide semiconductor field-effect transistors; Semiconductors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Cunningham, T. H. (2012). Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon. (Masters Thesis). Texas State University – San Marcos. Retrieved from https://digital.library.txstate.edu/handle/10877/4390

Chicago Manual of Style (16th Edition):

Cunningham, Thiess H. “Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon.” 2012. Masters Thesis, Texas State University – San Marcos. Accessed October 13, 2019. https://digital.library.txstate.edu/handle/10877/4390.

MLA Handbook (7th Edition):

Cunningham, Thiess H. “Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon.” 2012. Web. 13 Oct 2019.

Vancouver:

Cunningham TH. Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon. [Internet] [Masters thesis]. Texas State University – San Marcos; 2012. [cited 2019 Oct 13]. Available from: https://digital.library.txstate.edu/handle/10877/4390.

Council of Science Editors:

Cunningham TH. Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon. [Masters Thesis]. Texas State University – San Marcos; 2012. Available from: https://digital.library.txstate.edu/handle/10877/4390

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