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You searched for subject:(Plasma etching). Showing records 1 – 30 of 184 total matches.

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University of Houston

1. Zhu, Weiye 1987-. Advanced Control of Ion and Electron Energy Distributions and Investigation of in-situ Photo-Assisted Etching.

Degree: PhD, Chemical Engineering, 2014, University of Houston

 Precise control of ion energy distribution (IED) is critical to achieve highly selective, low damage etching. A novel approach to control IED using pulsed plasma(more)

Subjects/Keywords: Plasma etching; IED; Photo-assisted etching; EEDF

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APA (6th Edition):

Zhu, W. 1. (2014). Advanced Control of Ion and Electron Energy Distributions and Investigation of in-situ Photo-Assisted Etching. (Doctoral Dissertation). University of Houston. Retrieved from http://hdl.handle.net/10657/1385

Chicago Manual of Style (16th Edition):

Zhu, Weiye 1987-. “Advanced Control of Ion and Electron Energy Distributions and Investigation of in-situ Photo-Assisted Etching.” 2014. Doctoral Dissertation, University of Houston. Accessed January 16, 2021. http://hdl.handle.net/10657/1385.

MLA Handbook (7th Edition):

Zhu, Weiye 1987-. “Advanced Control of Ion and Electron Energy Distributions and Investigation of in-situ Photo-Assisted Etching.” 2014. Web. 16 Jan 2021.

Vancouver:

Zhu W1. Advanced Control of Ion and Electron Energy Distributions and Investigation of in-situ Photo-Assisted Etching. [Internet] [Doctoral dissertation]. University of Houston; 2014. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10657/1385.

Council of Science Editors:

Zhu W1. Advanced Control of Ion and Electron Energy Distributions and Investigation of in-situ Photo-Assisted Etching. [Doctoral Dissertation]. University of Houston; 2014. Available from: http://hdl.handle.net/10657/1385


Oregon State University

2. Venkataraman, Arjun. Etching of polyphenylene oxide in a downstream microwave plasma using NF₃, SF₆, O₂ and Ar gas mixtures.

Degree: MS, Chemical Engineering, 2004, Oregon State University

Subjects/Keywords: Plasma etching

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APA (6th Edition):

Venkataraman, A. (2004). Etching of polyphenylene oxide in a downstream microwave plasma using NF₃, SF₆, O₂ and Ar gas mixtures. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/29838

Chicago Manual of Style (16th Edition):

Venkataraman, Arjun. “Etching of polyphenylene oxide in a downstream microwave plasma using NF₃, SF₆, O₂ and Ar gas mixtures.” 2004. Masters Thesis, Oregon State University. Accessed January 16, 2021. http://hdl.handle.net/1957/29838.

MLA Handbook (7th Edition):

Venkataraman, Arjun. “Etching of polyphenylene oxide in a downstream microwave plasma using NF₃, SF₆, O₂ and Ar gas mixtures.” 2004. Web. 16 Jan 2021.

Vancouver:

Venkataraman A. Etching of polyphenylene oxide in a downstream microwave plasma using NF₃, SF₆, O₂ and Ar gas mixtures. [Internet] [Masters thesis]. Oregon State University; 2004. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1957/29838.

Council of Science Editors:

Venkataraman A. Etching of polyphenylene oxide in a downstream microwave plasma using NF₃, SF₆, O₂ and Ar gas mixtures. [Masters Thesis]. Oregon State University; 2004. Available from: http://hdl.handle.net/1957/29838


Oregon State University

3. Hsu, Chia-Chang. Etch products dynamics of polyphenylene oxide laminates using a CF₄/O₂/Ar downstream microwave plasma.

Degree: PhD, Chemical Engineering, 1999, Oregon State University

Subjects/Keywords: Plasma etching

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APA (6th Edition):

Hsu, C. (1999). Etch products dynamics of polyphenylene oxide laminates using a CF₄/O₂/Ar downstream microwave plasma. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/33505

Chicago Manual of Style (16th Edition):

Hsu, Chia-Chang. “Etch products dynamics of polyphenylene oxide laminates using a CF₄/O₂/Ar downstream microwave plasma.” 1999. Doctoral Dissertation, Oregon State University. Accessed January 16, 2021. http://hdl.handle.net/1957/33505.

MLA Handbook (7th Edition):

Hsu, Chia-Chang. “Etch products dynamics of polyphenylene oxide laminates using a CF₄/O₂/Ar downstream microwave plasma.” 1999. Web. 16 Jan 2021.

Vancouver:

Hsu C. Etch products dynamics of polyphenylene oxide laminates using a CF₄/O₂/Ar downstream microwave plasma. [Internet] [Doctoral dissertation]. Oregon State University; 1999. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1957/33505.

Council of Science Editors:

Hsu C. Etch products dynamics of polyphenylene oxide laminates using a CF₄/O₂/Ar downstream microwave plasma. [Doctoral Dissertation]. Oregon State University; 1999. Available from: http://hdl.handle.net/1957/33505


Texas A&M University

4. Li, Mingqian. Geometry and Capping Layer Effect on Copper Lines Electromigration Test.

Degree: MS, Electrical Engineering, 2019, Texas A&M University

 Copper (Cu) interconnect lines are widely used in advanced, high-density integrated circuits (ICs), large-area flat panel displays, and many nano and microelectronic and optoelectronic products.… (more)

Subjects/Keywords: Plasma based Cu etching; Electromigration

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APA (6th Edition):

Li, M. (2019). Geometry and Capping Layer Effect on Copper Lines Electromigration Test. (Masters Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/188761

Chicago Manual of Style (16th Edition):

Li, Mingqian. “Geometry and Capping Layer Effect on Copper Lines Electromigration Test.” 2019. Masters Thesis, Texas A&M University. Accessed January 16, 2021. http://hdl.handle.net/1969.1/188761.

MLA Handbook (7th Edition):

Li, Mingqian. “Geometry and Capping Layer Effect on Copper Lines Electromigration Test.” 2019. Web. 16 Jan 2021.

Vancouver:

Li M. Geometry and Capping Layer Effect on Copper Lines Electromigration Test. [Internet] [Masters thesis]. Texas A&M University; 2019. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1969.1/188761.

Council of Science Editors:

Li M. Geometry and Capping Layer Effect on Copper Lines Electromigration Test. [Masters Thesis]. Texas A&M University; 2019. Available from: http://hdl.handle.net/1969.1/188761

5. Laudrel, Edouard. Gravure de titane pour applications biomédicales : Titanium etching for biomedical applications.

Degree: Docteur es, Physique des plasmas, 2017, Université d'Orléans

Des efforts de miniaturisation sont nécessaires dans le domaine des dispositifs actifs implantables afin de limiter l’invasivité et de réduire les risques de complications suite… (more)

Subjects/Keywords: Titane; Gravure; Plasma; Titanium; Etching; Plasma; 621.044

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APA (6th Edition):

Laudrel, E. (2017). Gravure de titane pour applications biomédicales : Titanium etching for biomedical applications. (Doctoral Dissertation). Université d'Orléans. Retrieved from http://www.theses.fr/2017ORLE2035

Chicago Manual of Style (16th Edition):

Laudrel, Edouard. “Gravure de titane pour applications biomédicales : Titanium etching for biomedical applications.” 2017. Doctoral Dissertation, Université d'Orléans. Accessed January 16, 2021. http://www.theses.fr/2017ORLE2035.

MLA Handbook (7th Edition):

Laudrel, Edouard. “Gravure de titane pour applications biomédicales : Titanium etching for biomedical applications.” 2017. Web. 16 Jan 2021.

Vancouver:

Laudrel E. Gravure de titane pour applications biomédicales : Titanium etching for biomedical applications. [Internet] [Doctoral dissertation]. Université d'Orléans; 2017. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2017ORLE2035.

Council of Science Editors:

Laudrel E. Gravure de titane pour applications biomédicales : Titanium etching for biomedical applications. [Doctoral Dissertation]. Université d'Orléans; 2017. Available from: http://www.theses.fr/2017ORLE2035

6. Gosset, Nicolas. Procédés de gravure plasma pour la réalisation de structures verticales de diodes Schottky de nouvelle génération à base de GaN : Plasma etch processes for the realization of vertical structures for the new generation of GaN based Schottky diodes.

Degree: Docteur es, Physique des plasmas, 2016, Université d'Orléans

Le nitrure de gallium (GaN) est un semi-conducteur à grand gap dont les propriétés en font un bon candidat pour remplacer le Si dans le… (more)

Subjects/Keywords: GaN; Gravure; Plasma; GaN; Etching; Plasma; 621.044

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APA (6th Edition):

Gosset, N. (2016). Procédés de gravure plasma pour la réalisation de structures verticales de diodes Schottky de nouvelle génération à base de GaN : Plasma etch processes for the realization of vertical structures for the new generation of GaN based Schottky diodes. (Doctoral Dissertation). Université d'Orléans. Retrieved from http://www.theses.fr/2016ORLE2076

Chicago Manual of Style (16th Edition):

Gosset, Nicolas. “Procédés de gravure plasma pour la réalisation de structures verticales de diodes Schottky de nouvelle génération à base de GaN : Plasma etch processes for the realization of vertical structures for the new generation of GaN based Schottky diodes.” 2016. Doctoral Dissertation, Université d'Orléans. Accessed January 16, 2021. http://www.theses.fr/2016ORLE2076.

MLA Handbook (7th Edition):

Gosset, Nicolas. “Procédés de gravure plasma pour la réalisation de structures verticales de diodes Schottky de nouvelle génération à base de GaN : Plasma etch processes for the realization of vertical structures for the new generation of GaN based Schottky diodes.” 2016. Web. 16 Jan 2021.

Vancouver:

Gosset N. Procédés de gravure plasma pour la réalisation de structures verticales de diodes Schottky de nouvelle génération à base de GaN : Plasma etch processes for the realization of vertical structures for the new generation of GaN based Schottky diodes. [Internet] [Doctoral dissertation]. Université d'Orléans; 2016. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2016ORLE2076.

Council of Science Editors:

Gosset N. Procédés de gravure plasma pour la réalisation de structures verticales de diodes Schottky de nouvelle génération à base de GaN : Plasma etch processes for the realization of vertical structures for the new generation of GaN based Schottky diodes. [Doctoral Dissertation]. Université d'Orléans; 2016. Available from: http://www.theses.fr/2016ORLE2076


University of Maryland

7. Metzler, Dominik. High Precision Plasma Etch for Pattern Transfer: Towards Fluorocarbon Based Atomic Layer Etching.

Degree: Material Science and Engineering, 2016, University of Maryland

 A basic requirement of a plasma etching process is fidelity of the patterned organic materials. In photolithography, a He plasma pretreatment (PPT) based on high… (more)

Subjects/Keywords: Plasma physics; Engineering; Atomic Layer Etching; Fluorocarbon; Plasma Etching; Semiconductor

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APA (6th Edition):

Metzler, D. (2016). High Precision Plasma Etch for Pattern Transfer: Towards Fluorocarbon Based Atomic Layer Etching. (Thesis). University of Maryland. Retrieved from http://hdl.handle.net/1903/18633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Metzler, Dominik. “High Precision Plasma Etch for Pattern Transfer: Towards Fluorocarbon Based Atomic Layer Etching.” 2016. Thesis, University of Maryland. Accessed January 16, 2021. http://hdl.handle.net/1903/18633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Metzler, Dominik. “High Precision Plasma Etch for Pattern Transfer: Towards Fluorocarbon Based Atomic Layer Etching.” 2016. Web. 16 Jan 2021.

Vancouver:

Metzler D. High Precision Plasma Etch for Pattern Transfer: Towards Fluorocarbon Based Atomic Layer Etching. [Internet] [Thesis]. University of Maryland; 2016. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1903/18633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Metzler D. High Precision Plasma Etch for Pattern Transfer: Towards Fluorocarbon Based Atomic Layer Etching. [Thesis]. University of Maryland; 2016. Available from: http://hdl.handle.net/1903/18633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

8. Brihoum, Mélissa. Miniaturisation des grilles de transistors : Etude de l'intérêt des plasmas pulsés : Analysis of synchronized pulsed plasma for the manufacture of nanostructures.

Degree: Docteur es, Sciences et technologie industrielles, 2013, Université de Grenoble

 L'industrie de la microélectronique s'appuie sur l'évolution constante de la miniaturisation des transistors. D'ici 2016, cette industrie atteindra le nœud technologique 16 nm dans lequel… (more)

Subjects/Keywords: Plasmas pulsés; Gravure plasma; Diagnostiques plasma; Nanostructuration; Grille CMOS; Microélectronique; Pulsed plasma; Plasma etching; Plasma diagnostics; Nanostructuration; CMOS gate etching; Microelectronics

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APA (6th Edition):

Brihoum, M. (2013). Miniaturisation des grilles de transistors : Etude de l'intérêt des plasmas pulsés : Analysis of synchronized pulsed plasma for the manufacture of nanostructures. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2013GRENT073

Chicago Manual of Style (16th Edition):

Brihoum, Mélissa. “Miniaturisation des grilles de transistors : Etude de l'intérêt des plasmas pulsés : Analysis of synchronized pulsed plasma for the manufacture of nanostructures.” 2013. Doctoral Dissertation, Université de Grenoble. Accessed January 16, 2021. http://www.theses.fr/2013GRENT073.

MLA Handbook (7th Edition):

Brihoum, Mélissa. “Miniaturisation des grilles de transistors : Etude de l'intérêt des plasmas pulsés : Analysis of synchronized pulsed plasma for the manufacture of nanostructures.” 2013. Web. 16 Jan 2021.

Vancouver:

Brihoum M. Miniaturisation des grilles de transistors : Etude de l'intérêt des plasmas pulsés : Analysis of synchronized pulsed plasma for the manufacture of nanostructures. [Internet] [Doctoral dissertation]. Université de Grenoble; 2013. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2013GRENT073.

Council of Science Editors:

Brihoum M. Miniaturisation des grilles de transistors : Etude de l'intérêt des plasmas pulsés : Analysis of synchronized pulsed plasma for the manufacture of nanostructures. [Doctoral Dissertation]. Université de Grenoble; 2013. Available from: http://www.theses.fr/2013GRENT073


UCLA

9. Altieri, Nicholas Dominic. Atomic Layer Etching of Magnetic and Noble Metals.

Degree: Chemical Engineering, 2018, UCLA

 This work has focused on the study and development of atomic layer etching for metallic and intermetallic thin films commonly used in front and back… (more)

Subjects/Keywords: Chemical engineering; atomic layer etching; interconnect; magnetic metal; noble metal; plasma etching; reactive ion etching

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APA (6th Edition):

Altieri, N. D. (2018). Atomic Layer Etching of Magnetic and Noble Metals. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/28m072gc

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Altieri, Nicholas Dominic. “Atomic Layer Etching of Magnetic and Noble Metals.” 2018. Thesis, UCLA. Accessed January 16, 2021. http://www.escholarship.org/uc/item/28m072gc.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Altieri, Nicholas Dominic. “Atomic Layer Etching of Magnetic and Noble Metals.” 2018. Web. 16 Jan 2021.

Vancouver:

Altieri ND. Atomic Layer Etching of Magnetic and Noble Metals. [Internet] [Thesis]. UCLA; 2018. [cited 2021 Jan 16]. Available from: http://www.escholarship.org/uc/item/28m072gc.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Altieri ND. Atomic Layer Etching of Magnetic and Noble Metals. [Thesis]. UCLA; 2018. Available from: http://www.escholarship.org/uc/item/28m072gc

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Oxford

10. Astell-Burt, P. J. Studies on etching and polymer deposition in halocarbon plasmas.

Degree: PhD, 1987, University of Oxford

Plasma etching, the selective removal of materials by reaction with chemically active species formed in a glow-discharge, is widely used by the electronics industry because… (more)

Subjects/Keywords: 530.44; Halocarbons : Etching : Plasma etching

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APA (6th Edition):

Astell-Burt, P. J. (1987). Studies on etching and polymer deposition in halocarbon plasmas. (Doctoral Dissertation). University of Oxford. Retrieved from http://ora.ox.ac.uk/objects/uuid:d8fd1069-a66b-4372-8ba0-b9ca5367445c ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233440

Chicago Manual of Style (16th Edition):

Astell-Burt, P J. “Studies on etching and polymer deposition in halocarbon plasmas.” 1987. Doctoral Dissertation, University of Oxford. Accessed January 16, 2021. http://ora.ox.ac.uk/objects/uuid:d8fd1069-a66b-4372-8ba0-b9ca5367445c ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233440.

MLA Handbook (7th Edition):

Astell-Burt, P J. “Studies on etching and polymer deposition in halocarbon plasmas.” 1987. Web. 16 Jan 2021.

Vancouver:

Astell-Burt PJ. Studies on etching and polymer deposition in halocarbon plasmas. [Internet] [Doctoral dissertation]. University of Oxford; 1987. [cited 2021 Jan 16]. Available from: http://ora.ox.ac.uk/objects/uuid:d8fd1069-a66b-4372-8ba0-b9ca5367445c ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233440.

Council of Science Editors:

Astell-Burt PJ. Studies on etching and polymer deposition in halocarbon plasmas. [Doctoral Dissertation]. University of Oxford; 1987. Available from: http://ora.ox.ac.uk/objects/uuid:d8fd1069-a66b-4372-8ba0-b9ca5367445c ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233440


University of Oxford

11. Toogood, Matthew John. Studies of the chemistry of plasmas used for semiconductor etching.

Degree: PhD, 1991, University of Oxford

 Optical diagnostic techniques have been developed and then used to investigate the chemistry of reactive species formed in CF4 / O2 rf parallel plate discharges,… (more)

Subjects/Keywords: 530.44; Semiconductors : Etching : Plasma etching

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APA (6th Edition):

Toogood, M. J. (1991). Studies of the chemistry of plasmas used for semiconductor etching. (Doctoral Dissertation). University of Oxford. Retrieved from http://ora.ox.ac.uk/objects/uuid:e234bbaa-d6e6-4ac8-a3dd-aa9a2c1b1e39 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.291549

Chicago Manual of Style (16th Edition):

Toogood, Matthew John. “Studies of the chemistry of plasmas used for semiconductor etching.” 1991. Doctoral Dissertation, University of Oxford. Accessed January 16, 2021. http://ora.ox.ac.uk/objects/uuid:e234bbaa-d6e6-4ac8-a3dd-aa9a2c1b1e39 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.291549.

MLA Handbook (7th Edition):

Toogood, Matthew John. “Studies of the chemistry of plasmas used for semiconductor etching.” 1991. Web. 16 Jan 2021.

Vancouver:

Toogood MJ. Studies of the chemistry of plasmas used for semiconductor etching. [Internet] [Doctoral dissertation]. University of Oxford; 1991. [cited 2021 Jan 16]. Available from: http://ora.ox.ac.uk/objects/uuid:e234bbaa-d6e6-4ac8-a3dd-aa9a2c1b1e39 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.291549.

Council of Science Editors:

Toogood MJ. Studies of the chemistry of plasmas used for semiconductor etching. [Doctoral Dissertation]. University of Oxford; 1991. Available from: http://ora.ox.ac.uk/objects/uuid:e234bbaa-d6e6-4ac8-a3dd-aa9a2c1b1e39 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.291549


Georgia Tech

12. Li, Lester. Structural considerations for superhydrophobic and superoleophobic surfaces.

Degree: PhD, Chemical and Biomolecular Engineering, 2013, Georgia Tech

 Highly fluid repellent have application in many industries ranging from marine to biomedical due to their self-cleaning antifouling properties. The development and implementation of these… (more)

Subjects/Keywords: Superhydrophobic; Superoleophobic; Superamphiphobic; Paper; Plasma etching

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APA (6th Edition):

Li, L. (2013). Structural considerations for superhydrophobic and superoleophobic surfaces. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/52914

Chicago Manual of Style (16th Edition):

Li, Lester. “Structural considerations for superhydrophobic and superoleophobic surfaces.” 2013. Doctoral Dissertation, Georgia Tech. Accessed January 16, 2021. http://hdl.handle.net/1853/52914.

MLA Handbook (7th Edition):

Li, Lester. “Structural considerations for superhydrophobic and superoleophobic surfaces.” 2013. Web. 16 Jan 2021.

Vancouver:

Li L. Structural considerations for superhydrophobic and superoleophobic surfaces. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1853/52914.

Council of Science Editors:

Li L. Structural considerations for superhydrophobic and superoleophobic surfaces. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/52914


Kansas State University

13. Cooper, Brian W. Microstructured silicon carbide neutron detectors.

Degree: MS, Department of Mechanical and Nuclear Engineering, 2019, Kansas State University

 Silicon carbide is a material of interest in many ventures as an intriguing semiconducting material for use as high voltage, high temperature, high power, or… (more)

Subjects/Keywords: Silicon carbide; Neutron; Neutron detector; Plasma etching

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APA (6th Edition):

Cooper, B. W. (2019). Microstructured silicon carbide neutron detectors. (Masters Thesis). Kansas State University. Retrieved from http://hdl.handle.net/2097/40097

Chicago Manual of Style (16th Edition):

Cooper, Brian W. “Microstructured silicon carbide neutron detectors.” 2019. Masters Thesis, Kansas State University. Accessed January 16, 2021. http://hdl.handle.net/2097/40097.

MLA Handbook (7th Edition):

Cooper, Brian W. “Microstructured silicon carbide neutron detectors.” 2019. Web. 16 Jan 2021.

Vancouver:

Cooper BW. Microstructured silicon carbide neutron detectors. [Internet] [Masters thesis]. Kansas State University; 2019. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2097/40097.

Council of Science Editors:

Cooper BW. Microstructured silicon carbide neutron detectors. [Masters Thesis]. Kansas State University; 2019. Available from: http://hdl.handle.net/2097/40097


Texas Tech University

14. Luo, Zhuoxing. RF plasma etching with a DC bias.

Degree: Physics, 1994, Texas Tech University

Subjects/Keywords: Semiconductors  – Etching; Plasma etching; Plasma electrodynamics

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APA (6th Edition):

Luo, Z. (1994). RF plasma etching with a DC bias. (Thesis). Texas Tech University. Retrieved from http://hdl.handle.net/2346/15879

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Luo, Zhuoxing. “RF plasma etching with a DC bias.” 1994. Thesis, Texas Tech University. Accessed January 16, 2021. http://hdl.handle.net/2346/15879.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Luo, Zhuoxing. “RF plasma etching with a DC bias.” 1994. Web. 16 Jan 2021.

Vancouver:

Luo Z. RF plasma etching with a DC bias. [Internet] [Thesis]. Texas Tech University; 1994. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2346/15879.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Luo Z. RF plasma etching with a DC bias. [Thesis]. Texas Tech University; 1994. Available from: http://hdl.handle.net/2346/15879

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

15. Blanc, Romuald. Développement et caractérisation de procédés de gravure des espaceurs Si3N4 pour les technologies FDSOI : Development and characterization of Si3N4 spacers etch processes for FDSOI technologies.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2014, Université de Grenoble

Dans les technologies CMOS sur substrat FDSOI, la consommation de silicium dans les zones sources/drains des transistors par les étapes successives de gravure est un… (more)

Subjects/Keywords: Gravure; Espaceur; Plasma; Pulsé; Etching; Spacer; Plasma; Pulsed; 620

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APA (6th Edition):

Blanc, R. (2014). Développement et caractérisation de procédés de gravure des espaceurs Si3N4 pour les technologies FDSOI : Development and characterization of Si3N4 spacers etch processes for FDSOI technologies. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2014GRENT036

Chicago Manual of Style (16th Edition):

Blanc, Romuald. “Développement et caractérisation de procédés de gravure des espaceurs Si3N4 pour les technologies FDSOI : Development and characterization of Si3N4 spacers etch processes for FDSOI technologies.” 2014. Doctoral Dissertation, Université de Grenoble. Accessed January 16, 2021. http://www.theses.fr/2014GRENT036.

MLA Handbook (7th Edition):

Blanc, Romuald. “Développement et caractérisation de procédés de gravure des espaceurs Si3N4 pour les technologies FDSOI : Development and characterization of Si3N4 spacers etch processes for FDSOI technologies.” 2014. Web. 16 Jan 2021.

Vancouver:

Blanc R. Développement et caractérisation de procédés de gravure des espaceurs Si3N4 pour les technologies FDSOI : Development and characterization of Si3N4 spacers etch processes for FDSOI technologies. [Internet] [Doctoral dissertation]. Université de Grenoble; 2014. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2014GRENT036.

Council of Science Editors:

Blanc R. Développement et caractérisation de procédés de gravure des espaceurs Si3N4 pour les technologies FDSOI : Development and characterization of Si3N4 spacers etch processes for FDSOI technologies. [Doctoral Dissertation]. Université de Grenoble; 2014. Available from: http://www.theses.fr/2014GRENT036


Rochester Institute of Technology

16. Kusior, J. Patrick. Modification of structurally different polymers downstream of a microwave plasma.

Degree: School of Chemistry and Materials Science (COS), 1989, Rochester Institute of Technology

 Since the mid 1960's there have been numerous papers published on the modification of organic polymers in a pure oxygen or oxygen-f luorocarbon plasma. In… (more)

Subjects/Keywords: Polymers; Plasma chemistry; Plasma etching

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APA (6th Edition):

Kusior, J. P. (1989). Modification of structurally different polymers downstream of a microwave plasma. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/5962

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kusior, J Patrick. “Modification of structurally different polymers downstream of a microwave plasma.” 1989. Thesis, Rochester Institute of Technology. Accessed January 16, 2021. https://scholarworks.rit.edu/theses/5962.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kusior, J Patrick. “Modification of structurally different polymers downstream of a microwave plasma.” 1989. Web. 16 Jan 2021.

Vancouver:

Kusior JP. Modification of structurally different polymers downstream of a microwave plasma. [Internet] [Thesis]. Rochester Institute of Technology; 1989. [cited 2021 Jan 16]. Available from: https://scholarworks.rit.edu/theses/5962.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kusior JP. Modification of structurally different polymers downstream of a microwave plasma. [Thesis]. Rochester Institute of Technology; 1989. Available from: https://scholarworks.rit.edu/theses/5962

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

17. Mourey, Odile. Développement de nouvelles technologies de gravure : mise en évidence de la stochasticité du bombardement ionique lors de procédés plasma industriels : Development of new etching technologies highlight the stochasticity of the ion bombardment during industrial plasma processes.

Degree: Docteur es, Nano electronique et nano technologies, 2017, Université Grenoble Alpes (ComUE)

La course à la miniaturisation des dispositifs oblige les industriels a développé sans cesse de nouvelles technologies de gravure afin de contourner les limites imposées… (more)

Subjects/Keywords: Gravure; Procédés; Plasma; Stochasticité; Ions; Etching; Processes; Plasma; Stochasticity; Ions; 620

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APA (6th Edition):

Mourey, O. (2017). Développement de nouvelles technologies de gravure : mise en évidence de la stochasticité du bombardement ionique lors de procédés plasma industriels : Development of new etching technologies highlight the stochasticity of the ion bombardment during industrial plasma processes. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2017GREAT027

Chicago Manual of Style (16th Edition):

Mourey, Odile. “Développement de nouvelles technologies de gravure : mise en évidence de la stochasticité du bombardement ionique lors de procédés plasma industriels : Development of new etching technologies highlight the stochasticity of the ion bombardment during industrial plasma processes.” 2017. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed January 16, 2021. http://www.theses.fr/2017GREAT027.

MLA Handbook (7th Edition):

Mourey, Odile. “Développement de nouvelles technologies de gravure : mise en évidence de la stochasticité du bombardement ionique lors de procédés plasma industriels : Development of new etching technologies highlight the stochasticity of the ion bombardment during industrial plasma processes.” 2017. Web. 16 Jan 2021.

Vancouver:

Mourey O. Développement de nouvelles technologies de gravure : mise en évidence de la stochasticité du bombardement ionique lors de procédés plasma industriels : Development of new etching technologies highlight the stochasticity of the ion bombardment during industrial plasma processes. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2017. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2017GREAT027.

Council of Science Editors:

Mourey O. Développement de nouvelles technologies de gravure : mise en évidence de la stochasticité du bombardement ionique lors de procédés plasma industriels : Development of new etching technologies highlight the stochasticity of the ion bombardment during industrial plasma processes. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2017. Available from: http://www.theses.fr/2017GREAT027

18. Chambettaz, Florentin. Caractérisation et développement d'un procédé de gravure séquentiel contrôlé à l'échelle nanométrique : Characterization and development of a nanoscale controlled sequential etching process for SiN spacers.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Université Grenoble Alpes (ComUE)

La miniaturisation des dispositifs de la microélectronique nécessite la mise au point de procédé de gravure toujours plus précis. Le sujet de cette thèse s’inscrit… (more)

Subjects/Keywords: Microelectronique; Gravure Plasma; Implantion Hydrogène; Microelectronic; Plasma etching; Hydrogen implantation; 620

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APA (6th Edition):

Chambettaz, F. (2018). Caractérisation et développement d'un procédé de gravure séquentiel contrôlé à l'échelle nanométrique : Characterization and development of a nanoscale controlled sequential etching process for SiN spacers. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2018GREAT023

Chicago Manual of Style (16th Edition):

Chambettaz, Florentin. “Caractérisation et développement d'un procédé de gravure séquentiel contrôlé à l'échelle nanométrique : Characterization and development of a nanoscale controlled sequential etching process for SiN spacers.” 2018. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed January 16, 2021. http://www.theses.fr/2018GREAT023.

MLA Handbook (7th Edition):

Chambettaz, Florentin. “Caractérisation et développement d'un procédé de gravure séquentiel contrôlé à l'échelle nanométrique : Characterization and development of a nanoscale controlled sequential etching process for SiN spacers.” 2018. Web. 16 Jan 2021.

Vancouver:

Chambettaz F. Caractérisation et développement d'un procédé de gravure séquentiel contrôlé à l'échelle nanométrique : Characterization and development of a nanoscale controlled sequential etching process for SiN spacers. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2018. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2018GREAT023.

Council of Science Editors:

Chambettaz F. Caractérisation et développement d'un procédé de gravure séquentiel contrôlé à l'échelle nanométrique : Characterization and development of a nanoscale controlled sequential etching process for SiN spacers. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2018. Available from: http://www.theses.fr/2018GREAT023

19. Garcia barros, Maxime. Développement et caractérisation de procédés de gravure des espaceurs Si3N4 et SiCO pour la technologie FDSOI 14nm. : Development and characterization of spacers etching process for 14 nm FDSOI technology.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Université Grenoble Alpes (ComUE)

Les gravures par plasma pour les technologies sub 14nm nécessitent de bien contrôler la gravure de couches très minces de l’ordre du nanomètre, tout en… (more)

Subjects/Keywords: Microélectronnique; Gravure par plasma; Espaceur; Microelectronic; Etching by plasma; Spacer; 620

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APA (6th Edition):

Garcia barros, M. (2018). Développement et caractérisation de procédés de gravure des espaceurs Si3N4 et SiCO pour la technologie FDSOI 14nm. : Development and characterization of spacers etching process for 14 nm FDSOI technology. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2018GREAT028

Chicago Manual of Style (16th Edition):

Garcia barros, Maxime. “Développement et caractérisation de procédés de gravure des espaceurs Si3N4 et SiCO pour la technologie FDSOI 14nm. : Development and characterization of spacers etching process for 14 nm FDSOI technology.” 2018. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed January 16, 2021. http://www.theses.fr/2018GREAT028.

MLA Handbook (7th Edition):

Garcia barros, Maxime. “Développement et caractérisation de procédés de gravure des espaceurs Si3N4 et SiCO pour la technologie FDSOI 14nm. : Development and characterization of spacers etching process for 14 nm FDSOI technology.” 2018. Web. 16 Jan 2021.

Vancouver:

Garcia barros M. Développement et caractérisation de procédés de gravure des espaceurs Si3N4 et SiCO pour la technologie FDSOI 14nm. : Development and characterization of spacers etching process for 14 nm FDSOI technology. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2018. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2018GREAT028.

Council of Science Editors:

Garcia barros M. Développement et caractérisation de procédés de gravure des espaceurs Si3N4 et SiCO pour la technologie FDSOI 14nm. : Development and characterization of spacers etching process for 14 nm FDSOI technology. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2018. Available from: http://www.theses.fr/2018GREAT028


University of Alberta

20. Schoenborn, Philippe. Modeling and diagnostic of plasma etching processes.

Degree: MS, Department of Electrical Engineering, 1987, University of Alberta

Subjects/Keywords: Plasma etching – Mathematical models.; Semiconductors – Etching.

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APA (6th Edition):

Schoenborn, P. (1987). Modeling and diagnostic of plasma etching processes. (Masters Thesis). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/hm50tt81k

Chicago Manual of Style (16th Edition):

Schoenborn, Philippe. “Modeling and diagnostic of plasma etching processes.” 1987. Masters Thesis, University of Alberta. Accessed January 16, 2021. https://era.library.ualberta.ca/files/hm50tt81k.

MLA Handbook (7th Edition):

Schoenborn, Philippe. “Modeling and diagnostic of plasma etching processes.” 1987. Web. 16 Jan 2021.

Vancouver:

Schoenborn P. Modeling and diagnostic of plasma etching processes. [Internet] [Masters thesis]. University of Alberta; 1987. [cited 2021 Jan 16]. Available from: https://era.library.ualberta.ca/files/hm50tt81k.

Council of Science Editors:

Schoenborn P. Modeling and diagnostic of plasma etching processes. [Masters Thesis]. University of Alberta; 1987. Available from: https://era.library.ualberta.ca/files/hm50tt81k


Brigham Young University

21. Lunt, Evan J. Low-Loss Hollow Waveguide Platforms for Optical Sensing and Manipulation.

Degree: PhD, 2010, Brigham Young University

 This dissertation presents a method for fabricating integrated hollow and solid optical waveguides on planar substrates. These waveguides are antiresonant reflecting optical waveguides (ARROWs), where… (more)

Subjects/Keywords: hollow waveguides; ARROW; PECVD; SU-8; sacrificial etching; plasma etching; Electrical and Computer Engineering

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APA (6th Edition):

Lunt, E. J. (2010). Low-Loss Hollow Waveguide Platforms for Optical Sensing and Manipulation. (Doctoral Dissertation). Brigham Young University. Retrieved from https://scholarsarchive.byu.edu/cgi/viewcontent.cgi?article=3293&context=etd

Chicago Manual of Style (16th Edition):

Lunt, Evan J. “Low-Loss Hollow Waveguide Platforms for Optical Sensing and Manipulation.” 2010. Doctoral Dissertation, Brigham Young University. Accessed January 16, 2021. https://scholarsarchive.byu.edu/cgi/viewcontent.cgi?article=3293&context=etd.

MLA Handbook (7th Edition):

Lunt, Evan J. “Low-Loss Hollow Waveguide Platforms for Optical Sensing and Manipulation.” 2010. Web. 16 Jan 2021.

Vancouver:

Lunt EJ. Low-Loss Hollow Waveguide Platforms for Optical Sensing and Manipulation. [Internet] [Doctoral dissertation]. Brigham Young University; 2010. [cited 2021 Jan 16]. Available from: https://scholarsarchive.byu.edu/cgi/viewcontent.cgi?article=3293&context=etd.

Council of Science Editors:

Lunt EJ. Low-Loss Hollow Waveguide Platforms for Optical Sensing and Manipulation. [Doctoral Dissertation]. Brigham Young University; 2010. Available from: https://scholarsarchive.byu.edu/cgi/viewcontent.cgi?article=3293&context=etd


Hong Kong University of Science and Technology

22. Lee, Cheng-hao. Chemical study on quarter-micro periodic structure fabrication on Si by polarized laser beam on polymer surface and reactive ion etching.

Degree: 1994, Hong Kong University of Science and Technology

 A processing sequence for the fabrication of quarter micron periodic trench profiles on Si<100>wafers is described. By using polarized Nd:YAG laser irradiation on cured polyimide… (more)

Subjects/Keywords: Semiconductors  – Etching ; Plasma etching ; Optoelectronic devices

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APA (6th Edition):

Lee, C. (1994). Chemical study on quarter-micro periodic structure fabrication on Si by polarized laser beam on polymer surface and reactive ion etching. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-3952 ; https://doi.org/10.14711/thesis-b447430 ; http://repository.ust.hk/ir/bitstream/1783.1-3952/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Cheng-hao. “Chemical study on quarter-micro periodic structure fabrication on Si by polarized laser beam on polymer surface and reactive ion etching.” 1994. Thesis, Hong Kong University of Science and Technology. Accessed January 16, 2021. http://repository.ust.hk/ir/Record/1783.1-3952 ; https://doi.org/10.14711/thesis-b447430 ; http://repository.ust.hk/ir/bitstream/1783.1-3952/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Cheng-hao. “Chemical study on quarter-micro periodic structure fabrication on Si by polarized laser beam on polymer surface and reactive ion etching.” 1994. Web. 16 Jan 2021.

Vancouver:

Lee C. Chemical study on quarter-micro periodic structure fabrication on Si by polarized laser beam on polymer surface and reactive ion etching. [Internet] [Thesis]. Hong Kong University of Science and Technology; 1994. [cited 2021 Jan 16]. Available from: http://repository.ust.hk/ir/Record/1783.1-3952 ; https://doi.org/10.14711/thesis-b447430 ; http://repository.ust.hk/ir/bitstream/1783.1-3952/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee C. Chemical study on quarter-micro periodic structure fabrication on Si by polarized laser beam on polymer surface and reactive ion etching. [Thesis]. Hong Kong University of Science and Technology; 1994. Available from: http://repository.ust.hk/ir/Record/1783.1-3952 ; https://doi.org/10.14711/thesis-b447430 ; http://repository.ust.hk/ir/bitstream/1783.1-3952/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

23. Ah-Leung, Vincent. Développement de procédés de gravure des espaceurs Si3N4 pour les technologies sub-10nm : Silicon nitride spacer etching process development for sub-10nm Front End Of Line CMOS applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2020, Université Grenoble Alpes

La taille des composants microélectroniques ne cesse de diminuer afin de satisfaire les nouveaux besoins en termes de puissances de calcul et d’intégration aux appareils… (more)

Subjects/Keywords: Gravure espaceur; Architechtures CMOS 3D; Gravure plasma; Nano-Fils empilés; FinFET; Spacer etching; GAA Stacked nanowires; Plasma etching; FinFET

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APA (6th Edition):

Ah-Leung, V. (2020). Développement de procédés de gravure des espaceurs Si3N4 pour les technologies sub-10nm : Silicon nitride spacer etching process development for sub-10nm Front End Of Line CMOS applications. (Doctoral Dissertation). Université Grenoble Alpes. Retrieved from http://www.theses.fr/2020GRALT002

Chicago Manual of Style (16th Edition):

Ah-Leung, Vincent. “Développement de procédés de gravure des espaceurs Si3N4 pour les technologies sub-10nm : Silicon nitride spacer etching process development for sub-10nm Front End Of Line CMOS applications.” 2020. Doctoral Dissertation, Université Grenoble Alpes. Accessed January 16, 2021. http://www.theses.fr/2020GRALT002.

MLA Handbook (7th Edition):

Ah-Leung, Vincent. “Développement de procédés de gravure des espaceurs Si3N4 pour les technologies sub-10nm : Silicon nitride spacer etching process development for sub-10nm Front End Of Line CMOS applications.” 2020. Web. 16 Jan 2021.

Vancouver:

Ah-Leung V. Développement de procédés de gravure des espaceurs Si3N4 pour les technologies sub-10nm : Silicon nitride spacer etching process development for sub-10nm Front End Of Line CMOS applications. [Internet] [Doctoral dissertation]. Université Grenoble Alpes; 2020. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2020GRALT002.

Council of Science Editors:

Ah-Leung V. Développement de procédés de gravure des espaceurs Si3N4 pour les technologies sub-10nm : Silicon nitride spacer etching process development for sub-10nm Front End Of Line CMOS applications. [Doctoral Dissertation]. Université Grenoble Alpes; 2020. Available from: http://www.theses.fr/2020GRALT002


Université de Grenoble

24. Bès, Alexandre. Etude expérimentale des mécanismes physico-chimiques de gravure des polymères dans les plasmas à base d'oxygène. Application aux procédés de gravure profonde : Experimental study of physico-chemical etching mechanisms of polymers in oxygen-based plasmas Application processes deep etching.

Degree: Docteur es, Physique appliquée, 2014, Université de Grenoble

L'interaction plasma-polymère constitue aujourd'hui une discipline à part entière en raison des très nombreuses applications auxquelles elle conduit, comme la fonctionnalisation de surface ou le… (more)

Subjects/Keywords: Plasma; Gravure; Micro-Nano-Filtration; Polymère; Plasma; Etching; Micro-Nano-Filtration; Polymer; 530

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APA (6th Edition):

Bès, A. (2014). Etude expérimentale des mécanismes physico-chimiques de gravure des polymères dans les plasmas à base d'oxygène. Application aux procédés de gravure profonde : Experimental study of physico-chemical etching mechanisms of polymers in oxygen-based plasmas Application processes deep etching. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2014GRENY065

Chicago Manual of Style (16th Edition):

Bès, Alexandre. “Etude expérimentale des mécanismes physico-chimiques de gravure des polymères dans les plasmas à base d'oxygène. Application aux procédés de gravure profonde : Experimental study of physico-chemical etching mechanisms of polymers in oxygen-based plasmas Application processes deep etching.” 2014. Doctoral Dissertation, Université de Grenoble. Accessed January 16, 2021. http://www.theses.fr/2014GRENY065.

MLA Handbook (7th Edition):

Bès, Alexandre. “Etude expérimentale des mécanismes physico-chimiques de gravure des polymères dans les plasmas à base d'oxygène. Application aux procédés de gravure profonde : Experimental study of physico-chemical etching mechanisms of polymers in oxygen-based plasmas Application processes deep etching.” 2014. Web. 16 Jan 2021.

Vancouver:

Bès A. Etude expérimentale des mécanismes physico-chimiques de gravure des polymères dans les plasmas à base d'oxygène. Application aux procédés de gravure profonde : Experimental study of physico-chemical etching mechanisms of polymers in oxygen-based plasmas Application processes deep etching. [Internet] [Doctoral dissertation]. Université de Grenoble; 2014. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2014GRENY065.

Council of Science Editors:

Bès A. Etude expérimentale des mécanismes physico-chimiques de gravure des polymères dans les plasmas à base d'oxygène. Application aux procédés de gravure profonde : Experimental study of physico-chemical etching mechanisms of polymers in oxygen-based plasmas Application processes deep etching. [Doctoral Dissertation]. Université de Grenoble; 2014. Available from: http://www.theses.fr/2014GRENY065

25. Rizquez Moreno, Maria Mercedes. Characterization and optimization of high density plasma etching processes for advanced memories application : Caractérisation et optimisation des procédés de gravure plasma haute densité pour application sur des dispositifs de type mémoires électroniques avancées.

Degree: Docteur es, Microélectronique, 2016, Lyon

Parmi d’autres caractéristiques, la mémoire électronique idéale doit présenter une faible consommation d'énergie, haute densité et de la rapidité en lecture/écriture/effacement. Différents types de mémoires… (more)

Subjects/Keywords: Semi-conducteurs; Gravure par plasma; Control de procédé; Caractérisation; Semiconductors; Plasma Etching; Process Control; Characterization

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APA (6th Edition):

Rizquez Moreno, M. M. (2016). Characterization and optimization of high density plasma etching processes for advanced memories application : Caractérisation et optimisation des procédés de gravure plasma haute densité pour application sur des dispositifs de type mémoires électroniques avancées. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2016LYSEM024

Chicago Manual of Style (16th Edition):

Rizquez Moreno, Maria Mercedes. “Characterization and optimization of high density plasma etching processes for advanced memories application : Caractérisation et optimisation des procédés de gravure plasma haute densité pour application sur des dispositifs de type mémoires électroniques avancées.” 2016. Doctoral Dissertation, Lyon. Accessed January 16, 2021. http://www.theses.fr/2016LYSEM024.

MLA Handbook (7th Edition):

Rizquez Moreno, Maria Mercedes. “Characterization and optimization of high density plasma etching processes for advanced memories application : Caractérisation et optimisation des procédés de gravure plasma haute densité pour application sur des dispositifs de type mémoires électroniques avancées.” 2016. Web. 16 Jan 2021.

Vancouver:

Rizquez Moreno MM. Characterization and optimization of high density plasma etching processes for advanced memories application : Caractérisation et optimisation des procédés de gravure plasma haute densité pour application sur des dispositifs de type mémoires électroniques avancées. [Internet] [Doctoral dissertation]. Lyon; 2016. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2016LYSEM024.

Council of Science Editors:

Rizquez Moreno MM. Characterization and optimization of high density plasma etching processes for advanced memories application : Caractérisation et optimisation des procédés de gravure plasma haute densité pour application sur des dispositifs de type mémoires électroniques avancées. [Doctoral Dissertation]. Lyon; 2016. Available from: http://www.theses.fr/2016LYSEM024

26. Mebarki, Mokrane. Etude de la gravure des contacts en présence d’un double masque pour les nœuds technologiques avancés : Study of the contact etching with a double patterning strategy for advanced technological nodes.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2016, Université Grenoble Alpes (ComUE)

La réduction des dimensions des dispositifs et les limites atteintes par la lithographie pour les nœuds technologiques sub-20nm requièrent l’introduction d’un « double patterning »… (more)

Subjects/Keywords: Gravure; Plasma; Microélectronique; Contact; Double patterning; Etching; Plasma; Microelectronics; Contact; Double patterning; 620

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APA (6th Edition):

Mebarki, M. (2016). Etude de la gravure des contacts en présence d’un double masque pour les nœuds technologiques avancés : Study of the contact etching with a double patterning strategy for advanced technological nodes. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2016GREAT033

Chicago Manual of Style (16th Edition):

Mebarki, Mokrane. “Etude de la gravure des contacts en présence d’un double masque pour les nœuds technologiques avancés : Study of the contact etching with a double patterning strategy for advanced technological nodes.” 2016. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed January 16, 2021. http://www.theses.fr/2016GREAT033.

MLA Handbook (7th Edition):

Mebarki, Mokrane. “Etude de la gravure des contacts en présence d’un double masque pour les nœuds technologiques avancés : Study of the contact etching with a double patterning strategy for advanced technological nodes.” 2016. Web. 16 Jan 2021.

Vancouver:

Mebarki M. Etude de la gravure des contacts en présence d’un double masque pour les nœuds technologiques avancés : Study of the contact etching with a double patterning strategy for advanced technological nodes. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2016. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2016GREAT033.

Council of Science Editors:

Mebarki M. Etude de la gravure des contacts en présence d’un double masque pour les nœuds technologiques avancés : Study of the contact etching with a double patterning strategy for advanced technological nodes. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2016. Available from: http://www.theses.fr/2016GREAT033


Texas Tech University

27. Bray, Raymond P. Generic modeling of surface reaction kinetics in plasma etching systems.

Degree: Chemical Engineering, 1997, Texas Tech University

 The complexity of both the bulk plasma phase physics and the substrate surface reaction chemistry indicate the need for simplified phenomenological modeling of etching systems.… (more)

Subjects/Keywords: Plasma engineering; Semiconductors; Plasma etching; Electrochemistry

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bray, R. P. (1997). Generic modeling of surface reaction kinetics in plasma etching systems. (Thesis). Texas Tech University. Retrieved from http://hdl.handle.net/2346/10102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bray, Raymond P. “Generic modeling of surface reaction kinetics in plasma etching systems.” 1997. Thesis, Texas Tech University. Accessed January 16, 2021. http://hdl.handle.net/2346/10102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bray, Raymond P. “Generic modeling of surface reaction kinetics in plasma etching systems.” 1997. Web. 16 Jan 2021.

Vancouver:

Bray RP. Generic modeling of surface reaction kinetics in plasma etching systems. [Internet] [Thesis]. Texas Tech University; 1997. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2346/10102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bray RP. Generic modeling of surface reaction kinetics in plasma etching systems. [Thesis]. Texas Tech University; 1997. Available from: http://hdl.handle.net/2346/10102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

28. Peshl, Jeremy J. Characterization of Argon and Ar/Cl<sub>2 Plasmas Used for the Processing of Niobium Superconducting Radio-Frequency Cavities.

Degree: PhD, Physics, 2019, Old Dominion University

  The plasma processing of superconducting radio-frequency (SRF) cavities has shown significant promise as a complementary or possible replacement for the current wet etch processes.… (more)

Subjects/Keywords: Plasma etching; Spectroscopy; SRF; Atomic, Molecular and Optical Physics; Plasma and Beam Physics

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Peshl, J. J. (2019). Characterization of Argon and Ar/Cl<sub>2 Plasmas Used for the Processing of Niobium Superconducting Radio-Frequency Cavities. (Doctoral Dissertation). Old Dominion University. Retrieved from 9781392515525 ; https://digitalcommons.odu.edu/physics_etds/122

Chicago Manual of Style (16th Edition):

Peshl, Jeremy J. “Characterization of Argon and Ar/Cl<sub>2 Plasmas Used for the Processing of Niobium Superconducting Radio-Frequency Cavities.” 2019. Doctoral Dissertation, Old Dominion University. Accessed January 16, 2021. 9781392515525 ; https://digitalcommons.odu.edu/physics_etds/122.

MLA Handbook (7th Edition):

Peshl, Jeremy J. “Characterization of Argon and Ar/Cl<sub>2 Plasmas Used for the Processing of Niobium Superconducting Radio-Frequency Cavities.” 2019. Web. 16 Jan 2021.

Vancouver:

Peshl JJ. Characterization of Argon and Ar/Cl<sub>2 Plasmas Used for the Processing of Niobium Superconducting Radio-Frequency Cavities. [Internet] [Doctoral dissertation]. Old Dominion University; 2019. [cited 2021 Jan 16]. Available from: 9781392515525 ; https://digitalcommons.odu.edu/physics_etds/122.

Council of Science Editors:

Peshl JJ. Characterization of Argon and Ar/Cl<sub>2 Plasmas Used for the Processing of Niobium Superconducting Radio-Frequency Cavities. [Doctoral Dissertation]. Old Dominion University; 2019. Available from: 9781392515525 ; https://digitalcommons.odu.edu/physics_etds/122


NSYSU

29. Chuang, Ya-ting. Development of palladium nanoelectrode ensemble and its applications in chip-based electrochemical capillary electrophoresis.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2011, NSYSU

 This study demonstrates a high-performance capillary electrophoresis electrochemical (CE-EC) microchip featuring embedded the palladium nanoelectrode ensemble (Pd-NEE) as the decoupler. The Pd-NEE is fabricated utilizing… (more)

Subjects/Keywords: plasma etching; capillary electrophoresis; NEE; decoupler; electrochemical detection

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APA (6th Edition):

Chuang, Y. (2011). Development of palladium nanoelectrode ensemble and its applications in chip-based electrochemical capillary electrophoresis. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627111-184422

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chuang, Ya-ting. “Development of palladium nanoelectrode ensemble and its applications in chip-based electrochemical capillary electrophoresis.” 2011. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627111-184422.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chuang, Ya-ting. “Development of palladium nanoelectrode ensemble and its applications in chip-based electrochemical capillary electrophoresis.” 2011. Web. 16 Jan 2021.

Vancouver:

Chuang Y. Development of palladium nanoelectrode ensemble and its applications in chip-based electrochemical capillary electrophoresis. [Internet] [Thesis]. NSYSU; 2011. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627111-184422.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chuang Y. Development of palladium nanoelectrode ensemble and its applications in chip-based electrochemical capillary electrophoresis. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627111-184422

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Tokyo Institute of Technology / 東京工業大学

30. 松谷, 晃宏. A Study of Reactive Ion Beam Etching Process for Optoelectronic Micro-Devices : A Study of Reactive Ion Beam Etching Process for Optoelectronic Micro-Devices; 極微光デバイス製作のための反応性イオンビームエッチングに関する研究.

Degree: 博士(工学), 2012, Tokyo Institute of Technology / 東京工業大学

Subjects/Keywords: Plasma; プラズマ; Etching; エッチング

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APA (6th Edition):

松谷, . (2012). A Study of Reactive Ion Beam Etching Process for Optoelectronic Micro-Devices : A Study of Reactive Ion Beam Etching Process for Optoelectronic Micro-Devices; 極微光デバイス製作のための反応性イオンビームエッチングに関する研究. (Thesis). Tokyo Institute of Technology / 東京工業大学. Retrieved from http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100640040

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

松谷, 晃宏. “A Study of Reactive Ion Beam Etching Process for Optoelectronic Micro-Devices : A Study of Reactive Ion Beam Etching Process for Optoelectronic Micro-Devices; 極微光デバイス製作のための反応性イオンビームエッチングに関する研究.” 2012. Thesis, Tokyo Institute of Technology / 東京工業大学. Accessed January 16, 2021. http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100640040.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

松谷, 晃宏. “A Study of Reactive Ion Beam Etching Process for Optoelectronic Micro-Devices : A Study of Reactive Ion Beam Etching Process for Optoelectronic Micro-Devices; 極微光デバイス製作のための反応性イオンビームエッチングに関する研究.” 2012. Web. 16 Jan 2021.

Vancouver:

松谷 . A Study of Reactive Ion Beam Etching Process for Optoelectronic Micro-Devices : A Study of Reactive Ion Beam Etching Process for Optoelectronic Micro-Devices; 極微光デバイス製作のための反応性イオンビームエッチングに関する研究. [Internet] [Thesis]. Tokyo Institute of Technology / 東京工業大学; 2012. [cited 2021 Jan 16]. Available from: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100640040.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

松谷 . A Study of Reactive Ion Beam Etching Process for Optoelectronic Micro-Devices : A Study of Reactive Ion Beam Etching Process for Optoelectronic Micro-Devices; 極微光デバイス製作のための反応性イオンビームエッチングに関する研究. [Thesis]. Tokyo Institute of Technology / 東京工業大学; 2012. Available from: http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100640040

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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