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You searched for subject:(Phase Change Random Access Memory). Showing records 1 – 30 of 55315 total matches.

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University of Illinois – Urbana-Champaign

1. Yeo, Eng Guan. Transient Phase-Change Effect in Phase-Change Memory Devices.

Degree: MS, Electrical and Computer Engineering, 2009, University of Illinois – Urbana-Champaign

Phase-change random access memory (PCRAM) is one of the next-generation memories with the most potential due to its many good characteristics, such as nonvolatility, high… (more)

Subjects/Keywords: phase-change; transient effect; Phase-change random access memory (PCRAM)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yeo, E. G. (2009). Transient Phase-Change Effect in Phase-Change Memory Devices. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/11983

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yeo, Eng Guan. “Transient Phase-Change Effect in Phase-Change Memory Devices.” 2009. Thesis, University of Illinois – Urbana-Champaign. Accessed January 22, 2020. http://hdl.handle.net/2142/11983.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yeo, Eng Guan. “Transient Phase-Change Effect in Phase-Change Memory Devices.” 2009. Web. 22 Jan 2020.

Vancouver:

Yeo EG. Transient Phase-Change Effect in Phase-Change Memory Devices. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2009. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/2142/11983.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yeo EG. Transient Phase-Change Effect in Phase-Change Memory Devices. [Thesis]. University of Illinois – Urbana-Champaign; 2009. Available from: http://hdl.handle.net/2142/11983

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

2. Yeo, Eng Guan. Transient phase change effect in phase change memory devices.

Degree: PhD, 1200, 2011, University of Illinois – Urbana-Champaign

Phase change random access memory (PCRAM) is a leading contender for next generation nonvolatile memory. The phase change mechanism from high resistance amorphous phase to… (more)

Subjects/Keywords: phase change memory; Phase change random access memory (PCRAM); transient effect; time-resolved; filament

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APA (6th Edition):

Yeo, E. G. (2011). Transient phase change effect in phase change memory devices. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18640

Chicago Manual of Style (16th Edition):

Yeo, Eng Guan. “Transient phase change effect in phase change memory devices.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed January 22, 2020. http://hdl.handle.net/2142/18640.

MLA Handbook (7th Edition):

Yeo, Eng Guan. “Transient phase change effect in phase change memory devices.” 2011. Web. 22 Jan 2020.

Vancouver:

Yeo EG. Transient phase change effect in phase change memory devices. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/2142/18640.

Council of Science Editors:

Yeo EG. Transient phase change effect in phase change memory devices. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18640


University of Illinois – Urbana-Champaign

3. Xiong, Feng. Scaling study of phase change memory using carbon nanotube electrodes.

Degree: PhD, 1200, 2014, University of Illinois – Urbana-Champaign

 Demands for data storage and computer memory are growing exponentially. It is thus essential to find a new scalable, energy-efficient memory technology. We have been… (more)

Subjects/Keywords: Phase change material (PCM); Phase Change Memory; Carbon Nanotube (CNT); Finite Element Model; Resistive Memory; Resistive random access memory (RRAM); Crossbar

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APA (6th Edition):

Xiong, F. (2014). Scaling study of phase change memory using carbon nanotube electrodes. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/49709

Chicago Manual of Style (16th Edition):

Xiong, Feng. “Scaling study of phase change memory using carbon nanotube electrodes.” 2014. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed January 22, 2020. http://hdl.handle.net/2142/49709.

MLA Handbook (7th Edition):

Xiong, Feng. “Scaling study of phase change memory using carbon nanotube electrodes.” 2014. Web. 22 Jan 2020.

Vancouver:

Xiong F. Scaling study of phase change memory using carbon nanotube electrodes. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2014. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/2142/49709.

Council of Science Editors:

Xiong F. Scaling study of phase change memory using carbon nanotube electrodes. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/49709


University of Illinois – Urbana-Champaign

4. Tsai, Cheng-Lin. Carbon nanotube crossbar electrodes for high performance memory devices.

Degree: PhD, 0130, 2013, University of Illinois – Urbana-Champaign

 Two-terminal memories such as Resistive Random Access Memories (RRAMs) and Phase Change Memories (PCMs) are attractive as next generation non-volatile memories due to their low… (more)

Subjects/Keywords: Carbon nanotube; Raman spectroscopy; Resistive Random Access Memory; Phase Change Memory; Crossbar electrode; Nanoscale heater; Doping

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APA (6th Edition):

Tsai, C. (2013). Carbon nanotube crossbar electrodes for high performance memory devices. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/45642

Chicago Manual of Style (16th Edition):

Tsai, Cheng-Lin. “Carbon nanotube crossbar electrodes for high performance memory devices.” 2013. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed January 22, 2020. http://hdl.handle.net/2142/45642.

MLA Handbook (7th Edition):

Tsai, Cheng-Lin. “Carbon nanotube crossbar electrodes for high performance memory devices.” 2013. Web. 22 Jan 2020.

Vancouver:

Tsai C. Carbon nanotube crossbar electrodes for high performance memory devices. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2013. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/2142/45642.

Council of Science Editors:

Tsai C. Carbon nanotube crossbar electrodes for high performance memory devices. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2013. Available from: http://hdl.handle.net/2142/45642


Indian Institute of Science

5. Vinod, E M. Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5.

Degree: 2013, Indian Institute of Science

 GeTe and Ge2Sb2Te5 alloys are potential candidates for non-volatile phase change random access memories (PCRAM). For electrical data storage applications the materials should have stable… (more)

Subjects/Keywords: Amorphous Solids; Phase Change Memory Alloys; Germanium-Tellurium Phase Change Memory Alloys; Germanium-Antimony-TelluriumPhase Change Memory Alloys; Amorphous Semiconductors; Selenium Doped GeTe Alloys; Selenium Doped GeSbTe Alloys; Chalcogenide Glasses; GeTe Thin Films; GST (Germanium-Antimony-Tellurium) Films; Phase Change Random Access Memory; Phase Change Memory Materials; Ge2Sb2Te5 Thin Films; Ge-Te Phase Change Memory Alloys; Ge-Sb-Te Phase Change Memory Alloys; Materials Science

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APA (6th Edition):

Vinod, E. M. (2013). Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/2005/3339 ; http://etd.iisc.ernet.in/abstracts/4204/G25733-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vinod, E M. “Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5.” 2013. Thesis, Indian Institute of Science. Accessed January 22, 2020. http://etd.iisc.ernet.in/2005/3339 ; http://etd.iisc.ernet.in/abstracts/4204/G25733-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vinod, E M. “Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5.” 2013. Web. 22 Jan 2020.

Vancouver:

Vinod EM. Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5. [Internet] [Thesis]. Indian Institute of Science; 2013. [cited 2020 Jan 22]. Available from: http://etd.iisc.ernet.in/2005/3339 ; http://etd.iisc.ernet.in/abstracts/4204/G25733-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vinod EM. Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5. [Thesis]. Indian Institute of Science; 2013. Available from: http://etd.iisc.ernet.in/2005/3339 ; http://etd.iisc.ernet.in/abstracts/4204/G25733-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

6. WEI XIAOQIAN. Investigation of the scalability limitations of phase change random access memory.

Degree: 2008, National University of Singapore

Subjects/Keywords: Semiconductor memory; phase change random access memory; chalcogenide material; scalability limitations; integrated circuit

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APA (6th Edition):

XIAOQIAN, W. (2008). Investigation of the scalability limitations of phase change random access memory. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/16718

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

XIAOQIAN, WEI. “Investigation of the scalability limitations of phase change random access memory.” 2008. Thesis, National University of Singapore. Accessed January 22, 2020. http://scholarbank.nus.edu.sg/handle/10635/16718.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

XIAOQIAN, WEI. “Investigation of the scalability limitations of phase change random access memory.” 2008. Web. 22 Jan 2020.

Vancouver:

XIAOQIAN W. Investigation of the scalability limitations of phase change random access memory. [Internet] [Thesis]. National University of Singapore; 2008. [cited 2020 Jan 22]. Available from: http://scholarbank.nus.edu.sg/handle/10635/16718.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

XIAOQIAN W. Investigation of the scalability limitations of phase change random access memory. [Thesis]. National University of Singapore; 2008. Available from: http://scholarbank.nus.edu.sg/handle/10635/16718

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

7. Seong, Nak Hee. A reliable, secure phase-change memory as a main memory.

Degree: PhD, Electrical and Computer Engineering, 2012, Georgia Tech

 The main objective of this research is to provide an efficient and reliable method for using multi-level cell (MLC) phase-change memory (PCM) as a main… (more)

Subjects/Keywords: Security; Reliability; Memory hierarchy; Phase-change memory; PCM; Computer storage devices; Random access memory; Phase change memory

…using multi-level cell (MLC) phase-change memory (PCM) as a main memory… …address the lower write endurance is a hybrid phase-change memory architecture that can… …dynamically classify, detect, and isolate frequent writes from accessing the phase-change memory… …deployed memory technologies. Out of several emerging memory candidates, phase-change memory… …Management Schemes While phase change memory is often considered as a potential replacement of DRAM… 

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APA (6th Edition):

Seong, N. H. (2012). A reliable, secure phase-change memory as a main memory. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/50123

Chicago Manual of Style (16th Edition):

Seong, Nak Hee. “A reliable, secure phase-change memory as a main memory.” 2012. Doctoral Dissertation, Georgia Tech. Accessed January 22, 2020. http://hdl.handle.net/1853/50123.

MLA Handbook (7th Edition):

Seong, Nak Hee. “A reliable, secure phase-change memory as a main memory.” 2012. Web. 22 Jan 2020.

Vancouver:

Seong NH. A reliable, secure phase-change memory as a main memory. [Internet] [Doctoral dissertation]. Georgia Tech; 2012. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/1853/50123.

Council of Science Editors:

Seong NH. A reliable, secure phase-change memory as a main memory. [Doctoral Dissertation]. Georgia Tech; 2012. Available from: http://hdl.handle.net/1853/50123


Portland State University

8. Suzuki, Satoshi. The Development of Embedded DRAM Statistical Quality Models at Test and Use Conditions.

Degree: MS(M.S.) in Electrical and Computer Engineering, Electrical and Computer Engineering, 2010, Portland State University

  Today, the use of embedded Dynamic Random Access Memory (eDRAM) is increasing in our electronics that require large memories, such as gaming consoles and… (more)

Subjects/Keywords: Random access memory  – Reliability; Random access memory  – Testing

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APA (6th Edition):

Suzuki, S. (2010). The Development of Embedded DRAM Statistical Quality Models at Test and Use Conditions. (Masters Thesis). Portland State University. Retrieved from http://pdxscholar.library.pdx.edu/open_access_etds/341

Chicago Manual of Style (16th Edition):

Suzuki, Satoshi. “The Development of Embedded DRAM Statistical Quality Models at Test and Use Conditions.” 2010. Masters Thesis, Portland State University. Accessed January 22, 2020. http://pdxscholar.library.pdx.edu/open_access_etds/341.

MLA Handbook (7th Edition):

Suzuki, Satoshi. “The Development of Embedded DRAM Statistical Quality Models at Test and Use Conditions.” 2010. Web. 22 Jan 2020.

Vancouver:

Suzuki S. The Development of Embedded DRAM Statistical Quality Models at Test and Use Conditions. [Internet] [Masters thesis]. Portland State University; 2010. [cited 2020 Jan 22]. Available from: http://pdxscholar.library.pdx.edu/open_access_etds/341.

Council of Science Editors:

Suzuki S. The Development of Embedded DRAM Statistical Quality Models at Test and Use Conditions. [Masters Thesis]. Portland State University; 2010. Available from: http://pdxscholar.library.pdx.edu/open_access_etds/341


Oregon State University

9. Murali, Santosh. Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory.

Degree: MS, Electrical and Computer Engineering, 2011, Oregon State University

 Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals. Also… (more)

Subjects/Keywords: Non-volatile memory; Random access memory

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APA (6th Edition):

Murali, S. (2011). Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/26622

Chicago Manual of Style (16th Edition):

Murali, Santosh. “Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory.” 2011. Masters Thesis, Oregon State University. Accessed January 22, 2020. http://hdl.handle.net/1957/26622.

MLA Handbook (7th Edition):

Murali, Santosh. “Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory.” 2011. Web. 22 Jan 2020.

Vancouver:

Murali S. Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory. [Internet] [Masters thesis]. Oregon State University; 2011. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/1957/26622.

Council of Science Editors:

Murali S. Investigation of bipolar resistive switching in zinc-tin-oxide for resistive random access memory. [Masters Thesis]. Oregon State University; 2011. Available from: http://hdl.handle.net/1957/26622


NSYSU

10. Syu, Yong-En. Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices.

Degree: PhD, Physics, 2012, NSYSU

 Resistive Random Access Memory (RRAM) is considered as the most promising candidate for the next-generation nonvolatile memories due to their superior properties such as low… (more)

Subjects/Keywords: Resistive Random Access Memory (RRAM); Nonvolatile memory

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APA (6th Edition):

Syu, Y. (2012). Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425

Chicago Manual of Style (16th Edition):

Syu, Yong-En. “Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices.” 2012. Doctoral Dissertation, NSYSU. Accessed January 22, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425.

MLA Handbook (7th Edition):

Syu, Yong-En. “Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices.” 2012. Web. 22 Jan 2020.

Vancouver:

Syu Y. Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices. [Internet] [Doctoral dissertation]. NSYSU; 2012. [cited 2020 Jan 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425.

Council of Science Editors:

Syu Y. Research on Fabrication and Physical Mechanisms of Next-Generation Novel Nonvolatile Resistive Memory Devices. [Doctoral Dissertation]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0717112-154425


Oregon State University

11. Gang, Yung-jin, 1957-. Ultra low voltage DRAM current sense amplifier with body bias techniques.

Degree: PhD, Electrical and Computer Engineering, 1998, Oregon State University

 The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction… (more)

Subjects/Keywords: Random access memory

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APA (6th Edition):

Gang, Yung-jin, 1. (1998). Ultra low voltage DRAM current sense amplifier with body bias techniques. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/33344

Chicago Manual of Style (16th Edition):

Gang, Yung-jin, 1957-. “Ultra low voltage DRAM current sense amplifier with body bias techniques.” 1998. Doctoral Dissertation, Oregon State University. Accessed January 22, 2020. http://hdl.handle.net/1957/33344.

MLA Handbook (7th Edition):

Gang, Yung-jin, 1957-. “Ultra low voltage DRAM current sense amplifier with body bias techniques.” 1998. Web. 22 Jan 2020.

Vancouver:

Gang, Yung-jin 1. Ultra low voltage DRAM current sense amplifier with body bias techniques. [Internet] [Doctoral dissertation]. Oregon State University; 1998. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/1957/33344.

Council of Science Editors:

Gang, Yung-jin 1. Ultra low voltage DRAM current sense amplifier with body bias techniques. [Doctoral Dissertation]. Oregon State University; 1998. Available from: http://hdl.handle.net/1957/33344


University of New South Wales

12. Lin, Xi. Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications.

Degree: Materials Science & Engineering, 2013, University of New South Wales

 Resistive random access memory (RRAM), one of the next generation memory technologies, has been drawn a lot of attention in both fundamental and applied research.… (more)

Subjects/Keywords: Nanocubes; Resistive random access memory; Perovskite oxide

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APA (6th Edition):

Lin, X. (2013). Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications. (Masters Thesis). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/52770 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11443/SOURCE01?view=true

Chicago Manual of Style (16th Edition):

Lin, Xi. “Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications.” 2013. Masters Thesis, University of New South Wales. Accessed January 22, 2020. http://handle.unsw.edu.au/1959.4/52770 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11443/SOURCE01?view=true.

MLA Handbook (7th Edition):

Lin, Xi. “Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications.” 2013. Web. 22 Jan 2020.

Vancouver:

Lin X. Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications. [Internet] [Masters thesis]. University of New South Wales; 2013. [cited 2020 Jan 22]. Available from: http://handle.unsw.edu.au/1959.4/52770 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11443/SOURCE01?view=true.

Council of Science Editors:

Lin X. Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications. [Masters Thesis]. University of New South Wales; 2013. Available from: http://handle.unsw.edu.au/1959.4/52770 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11443/SOURCE01?view=true


University of Illinois – Urbana-Champaign

13. Jain, Prabhat. Refrint: intelligent refresh to minimize power in on-chip multiprocessor cache hierarchies.

Degree: MS, 0112, 2012, University of Illinois – Urbana-Champaign

 As manycores use dynamic energy ever more efficiently, static power consumption becomes a major concern. In particular, in a large manycore running at a low… (more)

Subjects/Keywords: Static random-access memory (SRAM); Embedded dynamic random-access memory (eDRAM); memory hierarchy; computer architecture; leakage; refresh power

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APA (6th Edition):

Jain, P. (2012). Refrint: intelligent refresh to minimize power in on-chip multiprocessor cache hierarchies. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/34585

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jain, Prabhat. “Refrint: intelligent refresh to minimize power in on-chip multiprocessor cache hierarchies.” 2012. Thesis, University of Illinois – Urbana-Champaign. Accessed January 22, 2020. http://hdl.handle.net/2142/34585.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jain, Prabhat. “Refrint: intelligent refresh to minimize power in on-chip multiprocessor cache hierarchies.” 2012. Web. 22 Jan 2020.

Vancouver:

Jain P. Refrint: intelligent refresh to minimize power in on-chip multiprocessor cache hierarchies. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2012. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/2142/34585.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jain P. Refrint: intelligent refresh to minimize power in on-chip multiprocessor cache hierarchies. [Thesis]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/34585

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Waterloo

14. Hosseini-Salekdeh, Seyed-Rambod. A Comparative Analysis of 6T and 10T SRAM Cells for Sub-threshold Operation in 65 nm CMOS Technology.

Degree: 2016, University of Waterloo

 The aggressive approach of the integrated electronics industry towards scaling and the growing trend of low-power applications have led to major research interest in ultra-low… (more)

Subjects/Keywords: SRAM; VLSI; transistor; Integrated Cicuit; Memory; Random Access Memory; Subthreshold

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APA (6th Edition):

Hosseini-Salekdeh, S. (2016). A Comparative Analysis of 6T and 10T SRAM Cells for Sub-threshold Operation in 65 nm CMOS Technology. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/10932

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hosseini-Salekdeh, Seyed-Rambod. “A Comparative Analysis of 6T and 10T SRAM Cells for Sub-threshold Operation in 65 nm CMOS Technology.” 2016. Thesis, University of Waterloo. Accessed January 22, 2020. http://hdl.handle.net/10012/10932.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hosseini-Salekdeh, Seyed-Rambod. “A Comparative Analysis of 6T and 10T SRAM Cells for Sub-threshold Operation in 65 nm CMOS Technology.” 2016. Web. 22 Jan 2020.

Vancouver:

Hosseini-Salekdeh S. A Comparative Analysis of 6T and 10T SRAM Cells for Sub-threshold Operation in 65 nm CMOS Technology. [Internet] [Thesis]. University of Waterloo; 2016. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/10012/10932.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hosseini-Salekdeh S. A Comparative Analysis of 6T and 10T SRAM Cells for Sub-threshold Operation in 65 nm CMOS Technology. [Thesis]. University of Waterloo; 2016. Available from: http://hdl.handle.net/10012/10932

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Michigan

15. Kim, Kuk-Hwan. High Density Crossbar Structure for Memory Application.

Degree: PhD, Electrical Engineering, 2011, University of Michigan

 In this thesis study, we utilized two-terminal resistive devices to construct high-density crossbar arrays for memory and logic applications. The performance advantages of the devices… (more)

Subjects/Keywords: Crossbar Memory Array; Resistance Random Access Memory; Electrical Engineering; Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kim, K. (2011). High Density Crossbar Structure for Memory Application. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/89645

Chicago Manual of Style (16th Edition):

Kim, Kuk-Hwan. “High Density Crossbar Structure for Memory Application.” 2011. Doctoral Dissertation, University of Michigan. Accessed January 22, 2020. http://hdl.handle.net/2027.42/89645.

MLA Handbook (7th Edition):

Kim, Kuk-Hwan. “High Density Crossbar Structure for Memory Application.” 2011. Web. 22 Jan 2020.

Vancouver:

Kim K. High Density Crossbar Structure for Memory Application. [Internet] [Doctoral dissertation]. University of Michigan; 2011. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/2027.42/89645.

Council of Science Editors:

Kim K. High Density Crossbar Structure for Memory Application. [Doctoral Dissertation]. University of Michigan; 2011. Available from: http://hdl.handle.net/2027.42/89645


Hong Kong University of Science and Technology

16. Wei, Zhewei. Classic and new data structure problems in external memory.

Degree: 2012, Hong Kong University of Science and Technology

 The demand of efficient data structures for query processing on massive data sets has grown tremendously in the past decades. Traditionally, data structures are designed… (more)

Subjects/Keywords: Random access memory ; Data structures (Computer science) ; Memory management (Computer science)

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APA (6th Edition):

Wei, Z. (2012). Classic and new data structure problems in external memory. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-7529 ; https://doi.org/10.14711/thesis-b1176705 ; http://repository.ust.hk/ir/bitstream/1783.1-7529/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wei, Zhewei. “Classic and new data structure problems in external memory.” 2012. Thesis, Hong Kong University of Science and Technology. Accessed January 22, 2020. http://repository.ust.hk/ir/Record/1783.1-7529 ; https://doi.org/10.14711/thesis-b1176705 ; http://repository.ust.hk/ir/bitstream/1783.1-7529/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wei, Zhewei. “Classic and new data structure problems in external memory.” 2012. Web. 22 Jan 2020.

Vancouver:

Wei Z. Classic and new data structure problems in external memory. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2012. [cited 2020 Jan 22]. Available from: http://repository.ust.hk/ir/Record/1783.1-7529 ; https://doi.org/10.14711/thesis-b1176705 ; http://repository.ust.hk/ir/bitstream/1783.1-7529/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wei Z. Classic and new data structure problems in external memory. [Thesis]. Hong Kong University of Science and Technology; 2012. Available from: http://repository.ust.hk/ir/Record/1783.1-7529 ; https://doi.org/10.14711/thesis-b1176705 ; http://repository.ust.hk/ir/bitstream/1783.1-7529/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of South Florida

17. Govindaraj, Rekha. Emerging Non-Volatile Memory Technologies for Computing and Security.

Degree: 2018, University of South Florida

 With CMOS technology scaling reaching its limitations rigorous research of alternate and competent technologies is paramount to push the boundaries of computing. Spintronic and resistive… (more)

Subjects/Keywords: Content Addressable Memory; Hardware Security; Magnetic Tunnel Junction; Random Telegraph Noise; Resistive Random Access Memory; Spintronic Memory; Computer Engineering; Computer Sciences

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Govindaraj, R. (2018). Emerging Non-Volatile Memory Technologies for Computing and Security. (Thesis). University of South Florida. Retrieved from https://scholarcommons.usf.edu/etd/7674

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Govindaraj, Rekha. “Emerging Non-Volatile Memory Technologies for Computing and Security.” 2018. Thesis, University of South Florida. Accessed January 22, 2020. https://scholarcommons.usf.edu/etd/7674.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Govindaraj, Rekha. “Emerging Non-Volatile Memory Technologies for Computing and Security.” 2018. Web. 22 Jan 2020.

Vancouver:

Govindaraj R. Emerging Non-Volatile Memory Technologies for Computing and Security. [Internet] [Thesis]. University of South Florida; 2018. [cited 2020 Jan 22]. Available from: https://scholarcommons.usf.edu/etd/7674.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Govindaraj R. Emerging Non-Volatile Memory Technologies for Computing and Security. [Thesis]. University of South Florida; 2018. Available from: https://scholarcommons.usf.edu/etd/7674

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

18. FANG WEIWEI LINA. Phase change memory engineering and integration with CMOS technology.

Degree: 2011, National University of Singapore

Subjects/Keywords: phase change memory

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APA (6th Edition):

LINA, F. W. (2011). Phase change memory engineering and integration with CMOS technology. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/29966

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

LINA, FANG WEIWEI. “Phase change memory engineering and integration with CMOS technology.” 2011. Thesis, National University of Singapore. Accessed January 22, 2020. http://scholarbank.nus.edu.sg/handle/10635/29966.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

LINA, FANG WEIWEI. “Phase change memory engineering and integration with CMOS technology.” 2011. Web. 22 Jan 2020.

Vancouver:

LINA FW. Phase change memory engineering and integration with CMOS technology. [Internet] [Thesis]. National University of Singapore; 2011. [cited 2020 Jan 22]. Available from: http://scholarbank.nus.edu.sg/handle/10635/29966.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

LINA FW. Phase change memory engineering and integration with CMOS technology. [Thesis]. National University of Singapore; 2011. Available from: http://scholarbank.nus.edu.sg/handle/10635/29966

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New South Wales

19. Emami Khansari, Sayedeh. Processing and characterization of Ge2Sb2Te5 and Sb2Te-based phase change memory films.

Degree: Materials Science & Engineering, 2017, University of New South Wales

 The global use of portable electronic devices demands new non-volatile memories (NVM) with faster operation speed, better performance and higher capacity. One of the promising… (more)

Subjects/Keywords: Ge2Sb2Te5; Phase change memory films; Sb2Te; Doping

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APA (6th Edition):

Emami Khansari, S. (2017). Processing and characterization of Ge2Sb2Te5 and Sb2Te-based phase change memory films. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/60160 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:51461/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Emami Khansari, Sayedeh. “Processing and characterization of Ge2Sb2Te5 and Sb2Te-based phase change memory films.” 2017. Doctoral Dissertation, University of New South Wales. Accessed January 22, 2020. http://handle.unsw.edu.au/1959.4/60160 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:51461/SOURCE02?view=true.

MLA Handbook (7th Edition):

Emami Khansari, Sayedeh. “Processing and characterization of Ge2Sb2Te5 and Sb2Te-based phase change memory films.” 2017. Web. 22 Jan 2020.

Vancouver:

Emami Khansari S. Processing and characterization of Ge2Sb2Te5 and Sb2Te-based phase change memory films. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2020 Jan 22]. Available from: http://handle.unsw.edu.au/1959.4/60160 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:51461/SOURCE02?view=true.

Council of Science Editors:

Emami Khansari S. Processing and characterization of Ge2Sb2Te5 and Sb2Te-based phase change memory films. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/60160 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:51461/SOURCE02?view=true


NSYSU

20. Hsieh, Chia-Lung. A Single-ended 5T and 6T Load-less SRAM with Low Energy Access.

Degree: Master, Electrical Engineering, 2017, NSYSU

 This thesis covers two topics, including single-ended 5T and 6T load-less SRAMs with low energy access. Prototypes of the two designs are realized using TSMC… (more)

Subjects/Keywords: energy per access; load-less; single-ended; leakage current; static random access memory

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APA (6th Edition):

Hsieh, C. (2017). A Single-ended 5T and 6T Load-less SRAM with Low Energy Access. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0606117-164916

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsieh, Chia-Lung. “A Single-ended 5T and 6T Load-less SRAM with Low Energy Access.” 2017. Thesis, NSYSU. Accessed January 22, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0606117-164916.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsieh, Chia-Lung. “A Single-ended 5T and 6T Load-less SRAM with Low Energy Access.” 2017. Web. 22 Jan 2020.

Vancouver:

Hsieh C. A Single-ended 5T and 6T Load-less SRAM with Low Energy Access. [Internet] [Thesis]. NSYSU; 2017. [cited 2020 Jan 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0606117-164916.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsieh C. A Single-ended 5T and 6T Load-less SRAM with Low Energy Access. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0606117-164916

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

21. Albert Raj, A. FPGA implementation of an efficient Routing filter design; -.

Degree: Information and Communication Engineering, 2014, Anna University

The internet consists of a large collection of routers forming a newlinemesh The routers are connected to each other by a variety of newlinecommunication links… (more)

Subjects/Keywords: Dynamic Random Access Memory; information and communication engineering; Internet Protocol

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APA (6th Edition):

Albert Raj, A. (2014). FPGA implementation of an efficient Routing filter design; -. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/26971

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Albert Raj, A. “FPGA implementation of an efficient Routing filter design; -.” 2014. Thesis, Anna University. Accessed January 22, 2020. http://shodhganga.inflibnet.ac.in/handle/10603/26971.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Albert Raj, A. “FPGA implementation of an efficient Routing filter design; -.” 2014. Web. 22 Jan 2020.

Vancouver:

Albert Raj A. FPGA implementation of an efficient Routing filter design; -. [Internet] [Thesis]. Anna University; 2014. [cited 2020 Jan 22]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/26971.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Albert Raj A. FPGA implementation of an efficient Routing filter design; -. [Thesis]. Anna University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/26971

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

22. Ciou, Jian-Fa. Study on Diamond-Like Carbon Resistive Random Access Memory.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2014, NSYSU

 In recent study, C doped SiO2 was found as a dielectric layer exhibiting a very good RRAM performance. The resistive switching mechanism of C:SiO2 RRAM… (more)

Subjects/Keywords: Resistance Random access memory; diamond-like carbon; hydrogenating

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ciou, J. (2014). Study on Diamond-Like Carbon Resistive Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-102905

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ciou, Jian-Fa. “Study on Diamond-Like Carbon Resistive Random Access Memory.” 2014. Thesis, NSYSU. Accessed January 22, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-102905.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ciou, Jian-Fa. “Study on Diamond-Like Carbon Resistive Random Access Memory.” 2014. Web. 22 Jan 2020.

Vancouver:

Ciou J. Study on Diamond-Like Carbon Resistive Random Access Memory. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Jan 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-102905.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ciou J. Study on Diamond-Like Carbon Resistive Random Access Memory. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617114-102905

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Texas State University – San Marcos

23. Talbert, James Nicholas. Electrical Characterization of Nickel Oxide and Nickel Iron Oxide Thin Films and Resistive Random Access Memory Devices Grown By Radio Frequency Sputtering.

Degree: MS, Physics, 2019, Texas State University – San Marcos

 The electrical properties of Radio Frequency Sputtered NiFeO and NiO films deposited on n and p-type Silicon was investigated for two different oxygen flows. Rectifying… (more)

Subjects/Keywords: Resistive random access memory; NiFeO; NiO; Electrical characterization

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APA (6th Edition):

Talbert, J. N. (2019). Electrical Characterization of Nickel Oxide and Nickel Iron Oxide Thin Films and Resistive Random Access Memory Devices Grown By Radio Frequency Sputtering. (Masters Thesis). Texas State University – San Marcos. Retrieved from https://digital.library.txstate.edu/handle/10877/9011

Chicago Manual of Style (16th Edition):

Talbert, James Nicholas. “Electrical Characterization of Nickel Oxide and Nickel Iron Oxide Thin Films and Resistive Random Access Memory Devices Grown By Radio Frequency Sputtering.” 2019. Masters Thesis, Texas State University – San Marcos. Accessed January 22, 2020. https://digital.library.txstate.edu/handle/10877/9011.

MLA Handbook (7th Edition):

Talbert, James Nicholas. “Electrical Characterization of Nickel Oxide and Nickel Iron Oxide Thin Films and Resistive Random Access Memory Devices Grown By Radio Frequency Sputtering.” 2019. Web. 22 Jan 2020.

Vancouver:

Talbert JN. Electrical Characterization of Nickel Oxide and Nickel Iron Oxide Thin Films and Resistive Random Access Memory Devices Grown By Radio Frequency Sputtering. [Internet] [Masters thesis]. Texas State University – San Marcos; 2019. [cited 2020 Jan 22]. Available from: https://digital.library.txstate.edu/handle/10877/9011.

Council of Science Editors:

Talbert JN. Electrical Characterization of Nickel Oxide and Nickel Iron Oxide Thin Films and Resistive Random Access Memory Devices Grown By Radio Frequency Sputtering. [Masters Thesis]. Texas State University – San Marcos; 2019. Available from: https://digital.library.txstate.edu/handle/10877/9011


University of Toronto

24. Huda, Safeen. Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory.

Degree: 2012, University of Toronto

This thesis presents the modeling and design of memory cells for Spin Torque Transfer Magnetoresistive Random Access Memory (STT-MRAM). The theory of operation of STT-MRAM… (more)

Subjects/Keywords: Computer Hardware; Random Access Memory; Spintronics; Non-volatile; MRAM; 0544

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APA (6th Edition):

Huda, S. (2012). Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory. (Masters Thesis). University of Toronto. Retrieved from http://hdl.handle.net/1807/42393

Chicago Manual of Style (16th Edition):

Huda, Safeen. “Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory.” 2012. Masters Thesis, University of Toronto. Accessed January 22, 2020. http://hdl.handle.net/1807/42393.

MLA Handbook (7th Edition):

Huda, Safeen. “Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory.” 2012. Web. 22 Jan 2020.

Vancouver:

Huda S. Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory. [Internet] [Masters thesis]. University of Toronto; 2012. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/1807/42393.

Council of Science Editors:

Huda S. Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory. [Masters Thesis]. University of Toronto; 2012. Available from: http://hdl.handle.net/1807/42393


University of Texas – Austin

25. -8287-8903. Multistate spin-transfer-torque random access memory.

Degree: MSin Engineering, Electrical and Computer engineering, 2016, University of Texas – Austin

 Spin-transfer-torque random access memory (STT-RAM) is an emerging non-volatile memory technology that stores information as the relative alignment of two ferromagnets in a magnetic tunnel… (more)

Subjects/Keywords: Multistate spin transfer torque random access memory; Multi-bit; STTRAM; MRAM

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APA (6th Edition):

-8287-8903. (2016). Multistate spin-transfer-torque random access memory. (Masters Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/41498

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-8287-8903. “Multistate spin-transfer-torque random access memory.” 2016. Masters Thesis, University of Texas – Austin. Accessed January 22, 2020. http://hdl.handle.net/2152/41498.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-8287-8903. “Multistate spin-transfer-torque random access memory.” 2016. Web. 22 Jan 2020.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-8287-8903. Multistate spin-transfer-torque random access memory. [Internet] [Masters thesis]. University of Texas – Austin; 2016. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/2152/41498.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-8287-8903. Multistate spin-transfer-torque random access memory. [Masters Thesis]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/41498

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


Hong Kong University of Science and Technology

26. Zhu, Hong. Power efficiency and reliability enhancement techniques in SRAM circuits.

Degree: 2014, Hong Kong University of Science and Technology

 The amount of embedded Static Random-Access Memory (SRAM) is increased to meet the performance requirements in each new microprocessor generation. Reliability of memory circuits is… (more)

Subjects/Keywords: Random access memory ; Electronic circuit design ; Integrated circuits ; Semiconductor storage devices

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APA (6th Edition):

Zhu, H. (2014). Power efficiency and reliability enhancement techniques in SRAM circuits. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-72516 ; https://doi.org/10.14711/thesis-b1432172 ; http://repository.ust.hk/ir/bitstream/1783.1-72516/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhu, Hong. “Power efficiency and reliability enhancement techniques in SRAM circuits.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed January 22, 2020. http://repository.ust.hk/ir/Record/1783.1-72516 ; https://doi.org/10.14711/thesis-b1432172 ; http://repository.ust.hk/ir/bitstream/1783.1-72516/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhu, Hong. “Power efficiency and reliability enhancement techniques in SRAM circuits.” 2014. Web. 22 Jan 2020.

Vancouver:

Zhu H. Power efficiency and reliability enhancement techniques in SRAM circuits. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2020 Jan 22]. Available from: http://repository.ust.hk/ir/Record/1783.1-72516 ; https://doi.org/10.14711/thesis-b1432172 ; http://repository.ust.hk/ir/bitstream/1783.1-72516/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhu H. Power efficiency and reliability enhancement techniques in SRAM circuits. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: http://repository.ust.hk/ir/Record/1783.1-72516 ; https://doi.org/10.14711/thesis-b1432172 ; http://repository.ust.hk/ir/bitstream/1783.1-72516/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

27. Chen, I-chieh. The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 With the improvement of nano technology, semiconductor devices would be scaled down and face the physic limitation. Therefore, it is unavoidably to study on the… (more)

Subjects/Keywords: Nonvolatile memory (NVM); Resistive Random Access Memory (RRAM); Ag-Cu alloy; conducting mechanism; ion migration

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APA (6th Edition):

Chen, I. (2016). The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0103116-211016

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, I-chieh. “The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory.” 2016. Thesis, NSYSU. Accessed January 22, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0103116-211016.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, I-chieh. “The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory.” 2016. Web. 22 Jan 2020.

Vancouver:

Chen I. The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory. [Internet] [Thesis]. NSYSU; 2016. [cited 2020 Jan 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0103116-211016.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen I. The study of material and electrical properties of Ag-Cu thin films applied in resistive random access memory. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0103116-211016

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Michigan

28. Shin, Jong Hoon. Resistive Switching Devices and Their Applications for Computing Beyond von Neumann Architecture.

Degree: PhD, Electrical Engineering, 2019, University of Michigan

 As the demand for processing artificial intelligence (AI), big data, and cognitive tasks increases, new devices and computing architectures that can reduce the cost of… (more)

Subjects/Keywords: neuromorphic computing; in-memory computing; resistive random-access memory; Electrical Engineering; Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Shin, J. H. (2019). Resistive Switching Devices and Their Applications for Computing Beyond von Neumann Architecture. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/151648

Chicago Manual of Style (16th Edition):

Shin, Jong Hoon. “Resistive Switching Devices and Their Applications for Computing Beyond von Neumann Architecture.” 2019. Doctoral Dissertation, University of Michigan. Accessed January 22, 2020. http://hdl.handle.net/2027.42/151648.

MLA Handbook (7th Edition):

Shin, Jong Hoon. “Resistive Switching Devices and Their Applications for Computing Beyond von Neumann Architecture.” 2019. Web. 22 Jan 2020.

Vancouver:

Shin JH. Resistive Switching Devices and Their Applications for Computing Beyond von Neumann Architecture. [Internet] [Doctoral dissertation]. University of Michigan; 2019. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/2027.42/151648.

Council of Science Editors:

Shin JH. Resistive Switching Devices and Their Applications for Computing Beyond von Neumann Architecture. [Doctoral Dissertation]. University of Michigan; 2019. Available from: http://hdl.handle.net/2027.42/151648


Hong Kong University of Science and Technology

29. Zhang, Yin PHYS. Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory.

Degree: 2018, Hong Kong University of Science and Technology

 This thesis investigates the dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory (SOT-MRAM) in two aspects: (1) the general expressions of the dynamic magnetic… (more)

Subjects/Keywords: Random access memory ; Effect of magnetism on ; Magnetic memory (Computers) ; Magnetic susceptibility ; Ferromagnetic resonance

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zhang, Y. P. (2018). Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-97479 ; https://doi.org/10.14711/thesis-991012660069403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97479/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Yin PHYS. “Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed January 22, 2020. http://repository.ust.hk/ir/Record/1783.1-97479 ; https://doi.org/10.14711/thesis-991012660069403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97479/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Yin PHYS. “Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory.” 2018. Web. 22 Jan 2020.

Vancouver:

Zhang YP. Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2020 Jan 22]. Available from: http://repository.ust.hk/ir/Record/1783.1-97479 ; https://doi.org/10.14711/thesis-991012660069403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97479/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang YP. Dynamic magnetic susceptibility and spin-orbit-torque magnetic random access memory. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: http://repository.ust.hk/ir/Record/1783.1-97479 ; https://doi.org/10.14711/thesis-991012660069403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97479/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rice University

30. Giles, Ellis Robinson. WrAP: Hardware and Software Support for Atomic Persistence in Storage Class Memory.

Degree: MS, Engineering, 2015, Rice University

 In-memory computing is gaining popularity as a means of sidestepping the performance bottlenecks of traditional block-based storage devices. However, the volatile nature of DRAM makes… (more)

Subjects/Keywords: SCM; Atomicity; Persistence; Storage Class Memory; Phase Change Memory; PCM

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Giles, E. R. (2015). WrAP: Hardware and Software Support for Atomic Persistence in Storage Class Memory. (Masters Thesis). Rice University. Retrieved from http://hdl.handle.net/1911/87822

Chicago Manual of Style (16th Edition):

Giles, Ellis Robinson. “WrAP: Hardware and Software Support for Atomic Persistence in Storage Class Memory.” 2015. Masters Thesis, Rice University. Accessed January 22, 2020. http://hdl.handle.net/1911/87822.

MLA Handbook (7th Edition):

Giles, Ellis Robinson. “WrAP: Hardware and Software Support for Atomic Persistence in Storage Class Memory.” 2015. Web. 22 Jan 2020.

Vancouver:

Giles ER. WrAP: Hardware and Software Support for Atomic Persistence in Storage Class Memory. [Internet] [Masters thesis]. Rice University; 2015. [cited 2020 Jan 22]. Available from: http://hdl.handle.net/1911/87822.

Council of Science Editors:

Giles ER. WrAP: Hardware and Software Support for Atomic Persistence in Storage Class Memory. [Masters Thesis]. Rice University; 2015. Available from: http://hdl.handle.net/1911/87822

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