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You searched for subject:(PAMBE). Showing records 1 – 8 of 8 total matches.

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University of Notre Dame

1. Satyaki Ganguly. Electrical Characterization of ALD Al2O3/AlN/GaN HEMTs and Integration with Microano Magnets for Novel Device Application.

Degree: MSin Electrical Engineering, Electrical Engineering, 2011, University of Notre Dame

  The III-Nitrides are direct band gap semiconductors that span a large range of band gaps from ~0.6 eV (InN) to 6.2 eV (AlN). In… (more)

Subjects/Keywords: Nanomagnet; HEMTs; PAMBE

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ganguly, S. (2011). Electrical Characterization of ALD Al2O3/AlN/GaN HEMTs and Integration with Microano Magnets for Novel Device Application. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/cc08hd78w50

Chicago Manual of Style (16th Edition):

Ganguly, Satyaki. “Electrical Characterization of ALD Al2O3/AlN/GaN HEMTs and Integration with Microano Magnets for Novel Device Application.” 2011. Masters Thesis, University of Notre Dame. Accessed November 20, 2018. https://curate.nd.edu/show/cc08hd78w50.

MLA Handbook (7th Edition):

Ganguly, Satyaki. “Electrical Characterization of ALD Al2O3/AlN/GaN HEMTs and Integration with Microano Magnets for Novel Device Application.” 2011. Web. 20 Nov 2018.

Vancouver:

Ganguly S. Electrical Characterization of ALD Al2O3/AlN/GaN HEMTs and Integration with Microano Magnets for Novel Device Application. [Internet] [Masters thesis]. University of Notre Dame; 2011. [cited 2018 Nov 20]. Available from: https://curate.nd.edu/show/cc08hd78w50.

Council of Science Editors:

Ganguly S. Electrical Characterization of ALD Al2O3/AlN/GaN HEMTs and Integration with Microano Magnets for Novel Device Application. [Masters Thesis]. University of Notre Dame; 2011. Available from: https://curate.nd.edu/show/cc08hd78w50


The Ohio State University

2. Yang, Jing. PAMBE Growth and Characterization of Superlattice Structures in Nitrides.

Degree: PhD, Materials Science and Engineering, 2013, The Ohio State University

 Superlattice structures formed using the III- nitrides family of semiconductors have attracted a great deal of attention due to some unique properties. Within the III-nitrides,… (more)

Subjects/Keywords: Materials Science; PAMBE, MQWs, SL, Structural Characterization

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APA (6th Edition):

Yang, J. (2013). PAMBE Growth and Characterization of Superlattice Structures in Nitrides. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1376986760

Chicago Manual of Style (16th Edition):

Yang, Jing. “PAMBE Growth and Characterization of Superlattice Structures in Nitrides.” 2013. Doctoral Dissertation, The Ohio State University. Accessed November 20, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1376986760.

MLA Handbook (7th Edition):

Yang, Jing. “PAMBE Growth and Characterization of Superlattice Structures in Nitrides.” 2013. Web. 20 Nov 2018.

Vancouver:

Yang J. PAMBE Growth and Characterization of Superlattice Structures in Nitrides. [Internet] [Doctoral dissertation]. The Ohio State University; 2013. [cited 2018 Nov 20]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1376986760.

Council of Science Editors:

Yang J. PAMBE Growth and Characterization of Superlattice Structures in Nitrides. [Doctoral Dissertation]. The Ohio State University; 2013. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1376986760


NSYSU

3. Chang, Chu-ya. Investigation polarization property of m-plane nitrides by Raman and photoluminescence.

Degree: Master, Physics, 2011, NSYSU

 The samples this thesis investigated were m-plane nitrides films grown on m-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE). Scanning electron microscopy (SEM) images revealed… (more)

Subjects/Keywords: stress; polarization dependent PL; sapphire; PAMBE; m-plane

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APA (6th Edition):

Chang, C. (2011). Investigation polarization property of m-plane nitrides by Raman and photoluminescence. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0823111-145558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Chu-ya. “Investigation polarization property of m-plane nitrides by Raman and photoluminescence.” 2011. Thesis, NSYSU. Accessed November 20, 2018. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0823111-145558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Chu-ya. “Investigation polarization property of m-plane nitrides by Raman and photoluminescence.” 2011. Web. 20 Nov 2018.

Vancouver:

Chang C. Investigation polarization property of m-plane nitrides by Raman and photoluminescence. [Internet] [Thesis]. NSYSU; 2011. [cited 2018 Nov 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0823111-145558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang C. Investigation polarization property of m-plane nitrides by Raman and photoluminescence. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0823111-145558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

4. Hsu, Yu-Chi. Growth and characterization of GaN heterophased quantum well microdisk and InGaN/GaN quantum well microdisk grown on gamma-LiAlO2 substrate by plasma-assisted molecular beam epitaxy.

Degree: PhD, Physics, 2013, NSYSU

 In this thesis, the GaN thin film was grown on γ-LiAlO2 (LAO) substrate by plasma assisted molecular beam epitaxy. The LAO substrate provides two basal… (more)

Subjects/Keywords: GaN microdisk; InGaN/GaN quantum well; plasma-assisted molecular beam epitaxy (PAMBE); GaN; wurtzite/zinc-blende/wurtzite

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APA (6th Edition):

Hsu, Y. (2013). Growth and characterization of GaN heterophased quantum well microdisk and InGaN/GaN quantum well microdisk grown on gamma-LiAlO2 substrate by plasma-assisted molecular beam epitaxy. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0201113-124535

Chicago Manual of Style (16th Edition):

Hsu, Yu-Chi. “Growth and characterization of GaN heterophased quantum well microdisk and InGaN/GaN quantum well microdisk grown on gamma-LiAlO2 substrate by plasma-assisted molecular beam epitaxy.” 2013. Doctoral Dissertation, NSYSU. Accessed November 20, 2018. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0201113-124535.

MLA Handbook (7th Edition):

Hsu, Yu-Chi. “Growth and characterization of GaN heterophased quantum well microdisk and InGaN/GaN quantum well microdisk grown on gamma-LiAlO2 substrate by plasma-assisted molecular beam epitaxy.” 2013. Web. 20 Nov 2018.

Vancouver:

Hsu Y. Growth and characterization of GaN heterophased quantum well microdisk and InGaN/GaN quantum well microdisk grown on gamma-LiAlO2 substrate by plasma-assisted molecular beam epitaxy. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2018 Nov 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0201113-124535.

Council of Science Editors:

Hsu Y. Growth and characterization of GaN heterophased quantum well microdisk and InGaN/GaN quantum well microdisk grown on gamma-LiAlO2 substrate by plasma-assisted molecular beam epitaxy. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0201113-124535


Texas Tech University

5. -3774-599X. Processing of GaN and SiC epitaxial layers for opto-electronic device applications.

Degree: 2016, Texas Tech University

 Gallium nitride (GaN) and silicon carbide (SiC) are often used to fabricate sophisticated electronic and photonic devices due to their inherent wide bandgap, high electron… (more)

Subjects/Keywords: GaN; III-Nitrides; SiC; Tandem Solar Cells; EQE; Passivation; Plasma Etching; Carrier Transport Mechanisms; HRXRD; PAMBE

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APA (6th Edition):

-3774-599X. (2016). Processing of GaN and SiC epitaxial layers for opto-electronic device applications. (Thesis). Texas Tech University. Retrieved from http://hdl.handle.net/2346/73673

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

-3774-599X. “Processing of GaN and SiC epitaxial layers for opto-electronic device applications.” 2016. Thesis, Texas Tech University. Accessed November 20, 2018. http://hdl.handle.net/2346/73673.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

-3774-599X. “Processing of GaN and SiC epitaxial layers for opto-electronic device applications.” 2016. Web. 20 Nov 2018.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-3774-599X. Processing of GaN and SiC epitaxial layers for opto-electronic device applications. [Internet] [Thesis]. Texas Tech University; 2016. [cited 2018 Nov 20]. Available from: http://hdl.handle.net/2346/73673.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

-3774-599X. Processing of GaN and SiC epitaxial layers for opto-electronic device applications. [Thesis]. Texas Tech University; 2016. Available from: http://hdl.handle.net/2346/73673

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

6. Pang, Liang. Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy.

Degree: MS, 1200, 2010, University of Illinois – Urbana-Champaign

 This thesis work presents a comprehensive study of the application of the PAMBE-SAG technique to fabrication of high-power GaN-based switching HEMTs. First, a detailed study… (more)

Subjects/Keywords: AlGaN/GaN; High Electron Mobility Transistor (HEMT); Selective area growth (SAG); Plasma-assisted molecular beam epitaxy (PAMBE); power switch; current density; on-state resistance; breakdown voltage; Gallium Nitride (GaN)

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APA (6th Edition):

Pang, L. (2010). Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/16009

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pang, Liang. “Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy.” 2010. Thesis, University of Illinois – Urbana-Champaign. Accessed November 20, 2018. http://hdl.handle.net/2142/16009.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pang, Liang. “Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy.” 2010. Web. 20 Nov 2018.

Vancouver:

Pang L. Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2010. [cited 2018 Nov 20]. Available from: http://hdl.handle.net/2142/16009.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pang L. Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy. [Thesis]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/16009

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

7. Roul, Basanta Kumar. Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy.

Degree: 2012, Indian Institute of Science

 Group III-nitride semiconductors have received much research attention and witnessed a significant development due to their ample applications in solid-state lighting and high-power/high-frequency electronics. Numerous… (more)

Subjects/Keywords: Molecular Beam Epitaxy (MBE); Thin Film Growth; III-Nitride Semiconductors; III-Nitride Heterostructures; Nitride Epitaxial Heterostructures; Nitride Epitaxial Films; Nitride Nanostructures; Nitride Semiconductors - Ferromagnetism; Gallium Nitride (GaN) Films; Gold/Gallium Nitride (Au/GaN) Schottky Diodes; Indium Nitride (InN) Thin Films; Indium Nitride (InN)/Gallium Nitride (GaN) Heterostructures; Gallium Nitride (GaN) Epitaxial Films; Nitride Schottky Diodes; Indium Nitride(InN) Nanostructures; Epitaxial Thin Films; Nitride Epitaxial Films; InN/GaN Heterostructures; InN Nanostructures; Plasma-Assisted Molecular Beam Epitaxy (PAMBE); Crystal Lattices; Materials Science

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APA (6th Edition):

Roul, B. K. (2012). Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2514

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Roul, Basanta Kumar. “Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy.” 2012. Thesis, Indian Institute of Science. Accessed November 20, 2018. http://hdl.handle.net/2005/2514.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Roul, Basanta Kumar. “Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy.” 2012. Web. 20 Nov 2018.

Vancouver:

Roul BK. Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy. [Internet] [Thesis]. Indian Institute of Science; 2012. [cited 2018 Nov 20]. Available from: http://hdl.handle.net/2005/2514.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Roul BK. Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy. [Thesis]. Indian Institute of Science; 2012. Available from: http://hdl.handle.net/2005/2514

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. Pang, Liang. Development of high-performance GaN-based power transistors.

Degree: PhD, 1200, 2013, University of Illinois – Urbana-Champaign

 This thesis presents a comprehensive study on the development of GaN-based high-power transistors. First, selective area growth by plasma-assisted molecular beam epitaxy, a technology developed… (more)

Subjects/Keywords: AlGaN/GaN high electron mobility transistor (HEMT); Ohmic contact; selective area growth by plasma-assisted molecular beam epitaxy (PAMBE-SAG); sputtered-gate-SiO2; Enhancement-mode metal-oxide-semiconductor high electron mobility transistor (MOSHEMT); flexible electronics

…3, selective area growth by plasma-assisted molecular beam epitaxy (PAMBE-SAG)… …composition, doping, and film thickness.1 In this study, our lab-built PAMBE system is used for the… …diagram of PAMBE system used in this study. 9 2.2 Sample growth AlGaN / GaN template grown by… …CURRENT LARGE-PERIPHERY HEMT VIA PAMBE-SAG 3.1 Introduction For decades, much effort has been… …employed to achieve SAG, 6,7 PAMBE has not attracted much attention, in spite of its many… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pang, L. (2013). Development of high-performance GaN-based power transistors. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/44312

Chicago Manual of Style (16th Edition):

Pang, Liang. “Development of high-performance GaN-based power transistors.” 2013. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 20, 2018. http://hdl.handle.net/2142/44312.

MLA Handbook (7th Edition):

Pang, Liang. “Development of high-performance GaN-based power transistors.” 2013. Web. 20 Nov 2018.

Vancouver:

Pang L. Development of high-performance GaN-based power transistors. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2013. [cited 2018 Nov 20]. Available from: http://hdl.handle.net/2142/44312.

Council of Science Editors:

Pang L. Development of high-performance GaN-based power transistors. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2013. Available from: http://hdl.handle.net/2142/44312

.