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You searched for subject:(P type Metal Oxide Semiconductors PMOS ). Showing records 1 – 30 of 36166 total matches.

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Indian Institute of Science

1. Ajayan, K R. Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology.

Degree: 2014, Indian Institute of Science

 Process variability is a major challenge for the design of nano scale MOSFETs due to fundamental physical limits as well as process control limitations. As… (more)

Subjects/Keywords: Metal Oxide Semiconductors (MOS); Digital Integrated Circuits; Complementary Metal Oxide Semiconductors (CMOS); N-type Metal-Oxide Semiconductors (NMOS); P-type Metal-Oxide Semiconductors (PMOS); Metal Oxode Semiconductor Device Modeling; Look Up Table Model (LUT); Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET); MOSFET Models; BSIM Models; Variability Aware Device Modeling; Integrated Circuit Modeling; Circuit Design; 45nm Analog CMOS Technology; Electrical Communication Engineering

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APA (6th Edition):

Ajayan, K. R. (2014). Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ajayan, K R. “Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology.” 2014. Thesis, Indian Institute of Science. Accessed May 30, 2020. http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ajayan, K R. “Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology.” 2014. Web. 30 May 2020.

Vancouver:

Ajayan KR. Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology. [Internet] [Thesis]. Indian Institute of Science; 2014. [cited 2020 May 30]. Available from: http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ajayan KR. Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology. [Thesis]. Indian Institute of Science; 2014. Available from: http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of North Texas

2. Haynes, Keith M. Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors.

Degree: 2015, University of North Texas

 This dissertation has two intersecting foci; firstly, the discovery of a new methodology for the growth of high surface area cuprous oxide (Cu2O) substrates. Secondly,… (more)

Subjects/Keywords: dye- sensitized; solar; DSC; p-type; excitonic; organic; chemistry; Solar cells.; Metal oxide semiconductors.; Zinc oxide thin films.

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APA (6th Edition):

Haynes, K. M. (2015). Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc804970/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Haynes, Keith M. “Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors.” 2015. Thesis, University of North Texas. Accessed May 30, 2020. https://digital.library.unt.edu/ark:/67531/metadc804970/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Haynes, Keith M. “Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors.” 2015. Web. 30 May 2020.

Vancouver:

Haynes KM. Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors. [Internet] [Thesis]. University of North Texas; 2015. [cited 2020 May 30]. Available from: https://digital.library.unt.edu/ark:/67531/metadc804970/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Haynes KM. Molecules and Materials for Excitonic Solar Cells Using P-type Metal Oxide Semiconductors. [Thesis]. University of North Texas; 2015. Available from: https://digital.library.unt.edu/ark:/67531/metadc804970/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. Sanal, K C. Development of p-type transparent semiconducting oxides for thin film transistor applications.

Degree: Physics, 2014, Cochin University of Science and Technology

 <p>Semiconductor physics has developed significantly in the field of re- search and industry in the past few decades due to it’s numerous practical applications. One… (more)

Subjects/Keywords: transparent conducting oxides; Amorphous semiconductors; p-Type transparent oxide semiconductors; thin film transistors; transparent p-SnO/n-ZnO pn heterojunction

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APA (6th Edition):

Sanal, K. C. (2014). Development of p-type transparent semiconducting oxides for thin film transistor applications. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/3991

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sanal, K C. “Development of p-type transparent semiconducting oxides for thin film transistor applications.” 2014. Thesis, Cochin University of Science and Technology. Accessed May 30, 2020. http://dyuthi.cusat.ac.in/purl/3991.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sanal, K C. “Development of p-type transparent semiconducting oxides for thin film transistor applications.” 2014. Web. 30 May 2020.

Vancouver:

Sanal KC. Development of p-type transparent semiconducting oxides for thin film transistor applications. [Internet] [Thesis]. Cochin University of Science and Technology; 2014. [cited 2020 May 30]. Available from: http://dyuthi.cusat.ac.in/purl/3991.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sanal KC. Development of p-type transparent semiconducting oxides for thin film transistor applications. [Thesis]. Cochin University of Science and Technology; 2014. Available from: http://dyuthi.cusat.ac.in/purl/3991

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rutgers University

4. Chen, Yuan, 1986-. Molecule design and surface functionalization study of metal-oxide semiconductors.

Degree: PhD, Nanochemistry, 2019, Rutgers University

Metal-oxide semiconductor materials have found application in numerous fields such as photo-electronics, catalysis, and sensing. The interfaces between semiconductor materials and bio-, organic molecules used… (more)

Subjects/Keywords: Chemistry; Metal oxide semiconductors

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APA (6th Edition):

Chen, Yuan, 1. (2019). Molecule design and surface functionalization study of metal-oxide semiconductors. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/60527/

Chicago Manual of Style (16th Edition):

Chen, Yuan, 1986-. “Molecule design and surface functionalization study of metal-oxide semiconductors.” 2019. Doctoral Dissertation, Rutgers University. Accessed May 30, 2020. https://rucore.libraries.rutgers.edu/rutgers-lib/60527/.

MLA Handbook (7th Edition):

Chen, Yuan, 1986-. “Molecule design and surface functionalization study of metal-oxide semiconductors.” 2019. Web. 30 May 2020.

Vancouver:

Chen, Yuan 1. Molecule design and surface functionalization study of metal-oxide semiconductors. [Internet] [Doctoral dissertation]. Rutgers University; 2019. [cited 2020 May 30]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/60527/.

Council of Science Editors:

Chen, Yuan 1. Molecule design and surface functionalization study of metal-oxide semiconductors. [Doctoral Dissertation]. Rutgers University; 2019. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/60527/


Dalhousie University

5. Yu, Haoran. Techniques for enhancing the performance of bulk-driven circuits in nano-scale CMOS technology.

Degree: PhD, Department of Electrical & Computer Engineering, 2014, Dalhousie University

 Bulk-driven (BD) technique has been proposed to remedy the voltage swing limitation problem in modern CMOS technology. However, challenges exist when the CMOS technologies move… (more)

Subjects/Keywords: CMOS; bulk-driven; Metal oxide semiconductors, Complementary; Metal oxide semiconductors, Complementary

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APA (6th Edition):

Yu, H. (2014). Techniques for enhancing the performance of bulk-driven circuits in nano-scale CMOS technology. (Doctoral Dissertation). Dalhousie University. Retrieved from http://hdl.handle.net/10222/55992

Chicago Manual of Style (16th Edition):

Yu, Haoran. “Techniques for enhancing the performance of bulk-driven circuits in nano-scale CMOS technology.” 2014. Doctoral Dissertation, Dalhousie University. Accessed May 30, 2020. http://hdl.handle.net/10222/55992.

MLA Handbook (7th Edition):

Yu, Haoran. “Techniques for enhancing the performance of bulk-driven circuits in nano-scale CMOS technology.” 2014. Web. 30 May 2020.

Vancouver:

Yu H. Techniques for enhancing the performance of bulk-driven circuits in nano-scale CMOS technology. [Internet] [Doctoral dissertation]. Dalhousie University; 2014. [cited 2020 May 30]. Available from: http://hdl.handle.net/10222/55992.

Council of Science Editors:

Yu H. Techniques for enhancing the performance of bulk-driven circuits in nano-scale CMOS technology. [Doctoral Dissertation]. Dalhousie University; 2014. Available from: http://hdl.handle.net/10222/55992


NSYSU

6. Tsai, Chen-Chi. Study of Non-Classical CMOSs by Using Junctionless and Punch-Through Technology.

Degree: Master, Electrical Engineering, 2013, NSYSU

 In this thesis, we propose four types non-classical CMOS inverters which the load use junctionless and punch-through technology. These inverters all use traditional NMOS as… (more)

Subjects/Keywords: low power consumption; 3D fold up; junctionless PMOS; gate P+-I-P+ transistor; two embedded oxide punch-through transistor; gate P-P-P+ transistor

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APA (6th Edition):

Tsai, C. (2013). Study of Non-Classical CMOSs by Using Junctionless and Punch-Through Technology. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705113-145004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tsai, Chen-Chi. “Study of Non-Classical CMOSs by Using Junctionless and Punch-Through Technology.” 2013. Thesis, NSYSU. Accessed May 30, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705113-145004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tsai, Chen-Chi. “Study of Non-Classical CMOSs by Using Junctionless and Punch-Through Technology.” 2013. Web. 30 May 2020.

Vancouver:

Tsai C. Study of Non-Classical CMOSs by Using Junctionless and Punch-Through Technology. [Internet] [Thesis]. NSYSU; 2013. [cited 2020 May 30]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705113-145004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tsai C. Study of Non-Classical CMOSs by Using Junctionless and Punch-Through Technology. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0705113-145004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Massey University

7. Sundararajan, Ananiah Durai. Design of analogue CMOS VLSI MEMS sensor : a dissertation presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Engineering , Integrated Circuit Design at School of Engineering and Advanced Technology, Massey University, Albany campus .

Degree: 2015, Massey University

 There is an increasing demand of a highly sensitive and reliable pressure micro-sensor system, for implantable and non-implantable medical applications. The prerequisite of a miniaturized… (more)

Subjects/Keywords: Microelectromechanical systems; Pressure transducers; Metal oxide semiconductors

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APA (6th Edition):

Sundararajan, A. D. (2015). Design of analogue CMOS VLSI MEMS sensor : a dissertation presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Engineering , Integrated Circuit Design at School of Engineering and Advanced Technology, Massey University, Albany campus . (Thesis). Massey University. Retrieved from http://hdl.handle.net/10179/9998

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sundararajan, Ananiah Durai. “Design of analogue CMOS VLSI MEMS sensor : a dissertation presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Engineering , Integrated Circuit Design at School of Engineering and Advanced Technology, Massey University, Albany campus .” 2015. Thesis, Massey University. Accessed May 30, 2020. http://hdl.handle.net/10179/9998.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sundararajan, Ananiah Durai. “Design of analogue CMOS VLSI MEMS sensor : a dissertation presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Engineering , Integrated Circuit Design at School of Engineering and Advanced Technology, Massey University, Albany campus .” 2015. Web. 30 May 2020.

Vancouver:

Sundararajan AD. Design of analogue CMOS VLSI MEMS sensor : a dissertation presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Engineering , Integrated Circuit Design at School of Engineering and Advanced Technology, Massey University, Albany campus . [Internet] [Thesis]. Massey University; 2015. [cited 2020 May 30]. Available from: http://hdl.handle.net/10179/9998.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sundararajan AD. Design of analogue CMOS VLSI MEMS sensor : a dissertation presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Engineering , Integrated Circuit Design at School of Engineering and Advanced Technology, Massey University, Albany campus . [Thesis]. Massey University; 2015. Available from: http://hdl.handle.net/10179/9998

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rutgers University

8. Wang, Yun, 1981-. High frequency techniques for advanced MOS device characterization.

Degree: PhD, Electrical and Computer Engineering, 2008, Rutgers University

 <p>Rapid advances in the semiconductor industry have led to the proliferation of electric devices and information technology (IT). Integrated circuits(IC) based upon silicon MOSFET's have… (more)

Subjects/Keywords: Metal oxide semiconductors

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APA (6th Edition):

Wang, Yun, 1. (2008). High frequency techniques for advanced MOS device characterization. (Doctoral Dissertation). Rutgers University. Retrieved from http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17235

Chicago Manual of Style (16th Edition):

Wang, Yun, 1981-. “High frequency techniques for advanced MOS device characterization.” 2008. Doctoral Dissertation, Rutgers University. Accessed May 30, 2020. http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17235.

MLA Handbook (7th Edition):

Wang, Yun, 1981-. “High frequency techniques for advanced MOS device characterization.” 2008. Web. 30 May 2020.

Vancouver:

Wang, Yun 1. High frequency techniques for advanced MOS device characterization. [Internet] [Doctoral dissertation]. Rutgers University; 2008. [cited 2020 May 30]. Available from: http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17235.

Council of Science Editors:

Wang, Yun 1. High frequency techniques for advanced MOS device characterization. [Doctoral Dissertation]. Rutgers University; 2008. Available from: http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17235


Hong Kong University of Science and Technology

9. Zeng, Fan. Silicon-migration technology and its applications to micro-electro-mechanical systems.

Degree: 2014, Hong Kong University of Science and Technology

 It is difficult for traditional micro-engineering methods to generate a suspended structural layer for micro-electro-mechanical systems (MEMS) applications without a releasing step. The limitation becomes… (more)

Subjects/Keywords: Microelectromechanical systems ; Metal oxide semiconductors, Complementary ; Silicon

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APA (6th Edition):

Zeng, F. (2014). Silicon-migration technology and its applications to micro-electro-mechanical systems. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-72513 ; https://doi.org/10.14711/thesis-b1432232 ; http://repository.ust.hk/ir/bitstream/1783.1-72513/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zeng, Fan. “Silicon-migration technology and its applications to micro-electro-mechanical systems.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed May 30, 2020. http://repository.ust.hk/ir/Record/1783.1-72513 ; https://doi.org/10.14711/thesis-b1432232 ; http://repository.ust.hk/ir/bitstream/1783.1-72513/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zeng, Fan. “Silicon-migration technology and its applications to micro-electro-mechanical systems.” 2014. Web. 30 May 2020.

Vancouver:

Zeng F. Silicon-migration technology and its applications to micro-electro-mechanical systems. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2020 May 30]. Available from: http://repository.ust.hk/ir/Record/1783.1-72513 ; https://doi.org/10.14711/thesis-b1432232 ; http://repository.ust.hk/ir/bitstream/1783.1-72513/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zeng F. Silicon-migration technology and its applications to micro-electro-mechanical systems. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: http://repository.ust.hk/ir/Record/1783.1-72513 ; https://doi.org/10.14711/thesis-b1432232 ; http://repository.ust.hk/ir/bitstream/1783.1-72513/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

10. Liu, Bing. CMOS image sensor for computed tomography applications.

Degree: 2011, Hong Kong University of Science and Technology

 Computed tomography (CT) is a primary non-invasive medical diagnostic modality. In a CT system, X-ray radiation is normally converted into visible light by a scintillator… (more)

Subjects/Keywords: Metal oxide semiconductors, Complementary ; Image converters ; Tomography

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APA (6th Edition):

Liu, B. (2011). CMOS image sensor for computed tomography applications. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-7612 ; https://doi.org/10.14711/thesis-b1155553 ; http://repository.ust.hk/ir/bitstream/1783.1-7612/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Bing. “CMOS image sensor for computed tomography applications.” 2011. Thesis, Hong Kong University of Science and Technology. Accessed May 30, 2020. http://repository.ust.hk/ir/Record/1783.1-7612 ; https://doi.org/10.14711/thesis-b1155553 ; http://repository.ust.hk/ir/bitstream/1783.1-7612/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Bing. “CMOS image sensor for computed tomography applications.” 2011. Web. 30 May 2020.

Vancouver:

Liu B. CMOS image sensor for computed tomography applications. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2011. [cited 2020 May 30]. Available from: http://repository.ust.hk/ir/Record/1783.1-7612 ; https://doi.org/10.14711/thesis-b1155553 ; http://repository.ust.hk/ir/bitstream/1783.1-7612/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu B. CMOS image sensor for computed tomography applications. [Thesis]. Hong Kong University of Science and Technology; 2011. Available from: http://repository.ust.hk/ir/Record/1783.1-7612 ; https://doi.org/10.14711/thesis-b1155553 ; http://repository.ust.hk/ir/bitstream/1783.1-7612/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

11. Zheng, Shiyuan. A CMOS digital polar transmitter with low noise ADPLL and high linear PA.

Degree: 2013, Hong Kong University of Science and Technology

 Digitally-intensive RF design has attracted a lot of attention recently because it is highly programmable for multi-standard operation and enables high system integration with digital… (more)

Subjects/Keywords: Radio ; Transmitter-receivers ; Metal oxide semiconductors, Complementary

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APA (6th Edition):

Zheng, S. (2013). A CMOS digital polar transmitter with low noise ADPLL and high linear PA. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-76066 ; https://doi.org/10.14711/thesis-b1214710 ; http://repository.ust.hk/ir/bitstream/1783.1-76066/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zheng, Shiyuan. “A CMOS digital polar transmitter with low noise ADPLL and high linear PA.” 2013. Thesis, Hong Kong University of Science and Technology. Accessed May 30, 2020. http://repository.ust.hk/ir/Record/1783.1-76066 ; https://doi.org/10.14711/thesis-b1214710 ; http://repository.ust.hk/ir/bitstream/1783.1-76066/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zheng, Shiyuan. “A CMOS digital polar transmitter with low noise ADPLL and high linear PA.” 2013. Web. 30 May 2020.

Vancouver:

Zheng S. A CMOS digital polar transmitter with low noise ADPLL and high linear PA. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2013. [cited 2020 May 30]. Available from: http://repository.ust.hk/ir/Record/1783.1-76066 ; https://doi.org/10.14711/thesis-b1214710 ; http://repository.ust.hk/ir/bitstream/1783.1-76066/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zheng S. A CMOS digital polar transmitter with low noise ADPLL and high linear PA. [Thesis]. Hong Kong University of Science and Technology; 2013. Available from: http://repository.ust.hk/ir/Record/1783.1-76066 ; https://doi.org/10.14711/thesis-b1214710 ; http://repository.ust.hk/ir/bitstream/1783.1-76066/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

12. Joplin, Matt. A method for characterization of single-event latchup technologies as a function of geometric variation.

Degree: 2018, University of Tennessee – Chattanooga

 Complementary metal-oxide-semiconductor (CMOS) technology is the dominant integrated circuit (IC) technology in modern electronics systems. As CMOS comprises of p-channel and n-channel transistors, there are… (more)

Subjects/Keywords: Metal oxide semiconductors; Complementary  – Design and construction

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APA (6th Edition):

Joplin, M. (2018). A method for characterization of single-event latchup technologies as a function of geometric variation. (Thesis). University of Tennessee – Chattanooga. Retrieved from https://scholar.utc.edu/theses/567

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Joplin, Matt. “A method for characterization of single-event latchup technologies as a function of geometric variation.” 2018. Thesis, University of Tennessee – Chattanooga. Accessed May 30, 2020. https://scholar.utc.edu/theses/567.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Joplin, Matt. “A method for characterization of single-event latchup technologies as a function of geometric variation.” 2018. Web. 30 May 2020.

Vancouver:

Joplin M. A method for characterization of single-event latchup technologies as a function of geometric variation. [Internet] [Thesis]. University of Tennessee – Chattanooga; 2018. [cited 2020 May 30]. Available from: https://scholar.utc.edu/theses/567.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Joplin M. A method for characterization of single-event latchup technologies as a function of geometric variation. [Thesis]. University of Tennessee – Chattanooga; 2018. Available from: https://scholar.utc.edu/theses/567

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Nelson Mandela Metropolitan University

13. Talla, Assane. Block copolymer templates for metal oxide nanostructures.

Degree: 2019, Nelson Mandela Metropolitan University

 Recent advances in technology have increased the need for fabrication of devices with feature sizes of tens of nanometers, such as ultra-fine filters or membranes,… (more)

Subjects/Keywords: Nanotechnology; Nanostructured materials; Metal oxide semiconductors

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APA (6th Edition):

Talla, A. (2019). Block copolymer templates for metal oxide nanostructures. (Thesis). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/43889

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Talla, Assane. “Block copolymer templates for metal oxide nanostructures.” 2019. Thesis, Nelson Mandela Metropolitan University. Accessed May 30, 2020. http://hdl.handle.net/10948/43889.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Talla, Assane. “Block copolymer templates for metal oxide nanostructures.” 2019. Web. 30 May 2020.

Vancouver:

Talla A. Block copolymer templates for metal oxide nanostructures. [Internet] [Thesis]. Nelson Mandela Metropolitan University; 2019. [cited 2020 May 30]. Available from: http://hdl.handle.net/10948/43889.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Talla A. Block copolymer templates for metal oxide nanostructures. [Thesis]. Nelson Mandela Metropolitan University; 2019. Available from: http://hdl.handle.net/10948/43889

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Columbia University

14. Irez, Kagan. Use of Monotonic Static Logic in Scaled, Leaky CMOS Technologies.

Degree: 2015, Columbia University

 This dissertation explores the characteristics of Monotonic-Static CMOS and its potential applications in leakage reduction in ultra scaled Bulk-Si technology with significant gate leakage currents.… (more)

Subjects/Keywords: Metal oxide semiconductors, Complementary – Testing; Electric circuits; Electric leakage; Metal oxide semiconductors, Complementary; Electrical engineering

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APA (6th Edition):

Irez, K. (2015). Use of Monotonic Static Logic in Scaled, Leaky CMOS Technologies. (Doctoral Dissertation). Columbia University. Retrieved from https://doi.org/10.7916/D86D5S5P

Chicago Manual of Style (16th Edition):

Irez, Kagan. “Use of Monotonic Static Logic in Scaled, Leaky CMOS Technologies.” 2015. Doctoral Dissertation, Columbia University. Accessed May 30, 2020. https://doi.org/10.7916/D86D5S5P.

MLA Handbook (7th Edition):

Irez, Kagan. “Use of Monotonic Static Logic in Scaled, Leaky CMOS Technologies.” 2015. Web. 30 May 2020.

Vancouver:

Irez K. Use of Monotonic Static Logic in Scaled, Leaky CMOS Technologies. [Internet] [Doctoral dissertation]. Columbia University; 2015. [cited 2020 May 30]. Available from: https://doi.org/10.7916/D86D5S5P.

Council of Science Editors:

Irez K. Use of Monotonic Static Logic in Scaled, Leaky CMOS Technologies. [Doctoral Dissertation]. Columbia University; 2015. Available from: https://doi.org/10.7916/D86D5S5P


Hong Kong University of Science and Technology

15. Zhou, Xiuju. InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications.

Degree: 2012, Hong Kong University of Science and Technology

 As Silicon complementary-oxide-semiconductor (CMOS) devices scale into the sub-22nm regime, severe short channel effects and power-dissipation constraints lead to huge challenges. To maintain high switching… (more)

Subjects/Keywords: Metal oxide semiconductor field-effect transistors ; Gallium arsenide semiconductors ; Metal oxide semiconductors

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APA (6th Edition):

Zhou, X. (2012). InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-7797 ; https://doi.org/10.14711/thesis-b1198657 ; http://repository.ust.hk/ir/bitstream/1783.1-7797/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhou, Xiuju. “InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications.” 2012. Thesis, Hong Kong University of Science and Technology. Accessed May 30, 2020. http://repository.ust.hk/ir/Record/1783.1-7797 ; https://doi.org/10.14711/thesis-b1198657 ; http://repository.ust.hk/ir/bitstream/1783.1-7797/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhou, Xiuju. “InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications.” 2012. Web. 30 May 2020.

Vancouver:

Zhou X. InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2012. [cited 2020 May 30]. Available from: http://repository.ust.hk/ir/Record/1783.1-7797 ; https://doi.org/10.14711/thesis-b1198657 ; http://repository.ust.hk/ir/bitstream/1783.1-7797/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhou X. InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications. [Thesis]. Hong Kong University of Science and Technology; 2012. Available from: http://repository.ust.hk/ir/Record/1783.1-7797 ; https://doi.org/10.14711/thesis-b1198657 ; http://repository.ust.hk/ir/bitstream/1783.1-7797/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

16. Feng, Zhuoqun ECE. Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT.

Degree: 2018, Hong Kong University of Science and Technology

 With their relatively low process temperature, high field-effect mobility, low leakage current and high transparency, thin-film transistors (TFTs) based on metal oxide (MO), especially indium-gallium-zinc… (more)

Subjects/Keywords: Thin film transistors ; Indium gallium zinc oxide ; Metal oxide semiconductors ; Electrodes

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APA (6th Edition):

Feng, Z. E. (2018). Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-97195 ; https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Feng, Zhuoqun ECE. “Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed May 30, 2020. http://repository.ust.hk/ir/Record/1783.1-97195 ; https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Feng, Zhuoqun ECE. “Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT.” 2018. Web. 30 May 2020.

Vancouver:

Feng ZE. Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2020 May 30]. Available from: http://repository.ust.hk/ir/Record/1783.1-97195 ; https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Feng ZE. Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: http://repository.ust.hk/ir/Record/1783.1-97195 ; https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

17. Djezzar, Boualem. Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS.

Degree: 2014, Université M'Hamed Bougara Boumerdès

 <p>196 p. : ill. ; 30 cm p><p>La miniaturisation des composants électroniques a entraîné une réduction accélérée de l'épaisseur du diélectrique de la grille des… (more)

Subjects/Keywords: MOS (électronique); Transistors MOSFET; Metal oxide semiconductors; Metal oxide semiconductor field-effect transistors

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APA (6th Edition):

Djezzar, B. (2014). Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080123456789/1437

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Djezzar, Boualem. “Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS.” 2014. Thesis, Université M'Hamed Bougara Boumerdès. Accessed May 30, 2020. http://dlibrary.univ-boumerdes.dz:8080123456789/1437.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Djezzar, Boualem. “Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS.” 2014. Web. 30 May 2020.

Vancouver:

Djezzar B. Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2014. [cited 2020 May 30]. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1437.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Djezzar B. Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS. [Thesis]. Université M'Hamed Bougara Boumerdès; 2014. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1437

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

18. Lu, Lei. Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide.

Degree: 2014, Hong Kong University of Science and Technology

 Thin-film transistors (TFTs) based on metal oxides (MOs), especially zinc oxide (ZnO) and indium-gallium-zinc oxide (IGZO), are promising alternatives to silicon-based TFTs in future flat-panel… (more)

Subjects/Keywords: Thin film transistors ; Metal oxide semiconductors ; Zinc oxide ; Indium gallium zinc oxide

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APA (6th Edition):

Lu, L. (2014). Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-71879 ; https://doi.org/10.14711/thesis-b1347295 ; http://repository.ust.hk/ir/bitstream/1783.1-71879/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, Lei. “Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed May 30, 2020. http://repository.ust.hk/ir/Record/1783.1-71879 ; https://doi.org/10.14711/thesis-b1347295 ; http://repository.ust.hk/ir/bitstream/1783.1-71879/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, Lei. “Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide.” 2014. Web. 30 May 2020.

Vancouver:

Lu L. Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2020 May 30]. Available from: http://repository.ust.hk/ir/Record/1783.1-71879 ; https://doi.org/10.14711/thesis-b1347295 ; http://repository.ust.hk/ir/bitstream/1783.1-71879/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu L. Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: http://repository.ust.hk/ir/Record/1783.1-71879 ; https://doi.org/10.14711/thesis-b1347295 ; http://repository.ust.hk/ir/bitstream/1783.1-71879/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

19. Le, Thi Ly. Preparation of transition metal oxide thin films used as solar absorbers : Préparation de couches minces d'oxydes de métaux de transition utilisées comme absorbeurs solaires.

Degree: Docteur es, Sciences et génie des matériaux, 2016, Université Toulouse III – Paul Sabatier

 Ce travail de thèse a porté sur l'élaboration de nanoparticules et de couches minces d'oxydes spinelles mixtes de MxCo2-xMnO4 (M = Ni, Cu, Zn ;… (more)

Subjects/Keywords: Semi-conducteurs type p; Absorbant de lumière; MxCo2-xMnO4 (M = Ni, Cu, Zn, x = 0,0,15, 0,30, 0,60); Conduction; Propriétés optique; Photo-catalyse; Photovoltaïque; P-type semiconductors; Light absorbers; Spinel oxide MxCo2-xMnO4 (M = Ni, Cu, Zn, x = 0,0,15, 0,30, 0,60); Conduction; Optical properties; Photo-catalysis; Photovoltaic

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APA (6th Edition):

Le, T. L. (2016). Preparation of transition metal oxide thin films used as solar absorbers : Préparation de couches minces d'oxydes de métaux de transition utilisées comme absorbeurs solaires. (Doctoral Dissertation). Université Toulouse III – Paul Sabatier. Retrieved from http://www.theses.fr/2016TOU30120

Chicago Manual of Style (16th Edition):

Le, Thi Ly. “Preparation of transition metal oxide thin films used as solar absorbers : Préparation de couches minces d'oxydes de métaux de transition utilisées comme absorbeurs solaires.” 2016. Doctoral Dissertation, Université Toulouse III – Paul Sabatier. Accessed May 30, 2020. http://www.theses.fr/2016TOU30120.

MLA Handbook (7th Edition):

Le, Thi Ly. “Preparation of transition metal oxide thin films used as solar absorbers : Préparation de couches minces d'oxydes de métaux de transition utilisées comme absorbeurs solaires.” 2016. Web. 30 May 2020.

Vancouver:

Le TL. Preparation of transition metal oxide thin films used as solar absorbers : Préparation de couches minces d'oxydes de métaux de transition utilisées comme absorbeurs solaires. [Internet] [Doctoral dissertation]. Université Toulouse III – Paul Sabatier; 2016. [cited 2020 May 30]. Available from: http://www.theses.fr/2016TOU30120.

Council of Science Editors:

Le TL. Preparation of transition metal oxide thin films used as solar absorbers : Préparation de couches minces d'oxydes de métaux de transition utilisées comme absorbeurs solaires. [Doctoral Dissertation]. Université Toulouse III – Paul Sabatier; 2016. Available from: http://www.theses.fr/2016TOU30120


Georgia Tech

20. Mills, Richard P., III. Design and optimization of RF test structures for mm-wave circuit design.

Degree: MS, Electrical and Computer Engineering, 2011, Georgia Tech

This work discusses a methodology developed for robust RF test structure design for SiGe HBTs operating at mm-wave frequencies. Advisors/Committee Members: Cressler, John (Committee Chair), Davis, Jeff (Committee Member), Papapolymerou, John (Committee Member).

Subjects/Keywords: Mm-wave; RF; Test structures; Semiconductors; Metal oxide semiconductors, Complementary; Silicon; Radio frequency integrated circuits

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APA (6th Edition):

Mills, Richard P., I. (2011). Design and optimization of RF test structures for mm-wave circuit design. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/42922

Chicago Manual of Style (16th Edition):

Mills, Richard P., III. “Design and optimization of RF test structures for mm-wave circuit design.” 2011. Masters Thesis, Georgia Tech. Accessed May 30, 2020. http://hdl.handle.net/1853/42922.

MLA Handbook (7th Edition):

Mills, Richard P., III. “Design and optimization of RF test structures for mm-wave circuit design.” 2011. Web. 30 May 2020.

Vancouver:

Mills, Richard P. I. Design and optimization of RF test structures for mm-wave circuit design. [Internet] [Masters thesis]. Georgia Tech; 2011. [cited 2020 May 30]. Available from: http://hdl.handle.net/1853/42922.

Council of Science Editors:

Mills, Richard P. I. Design and optimization of RF test structures for mm-wave circuit design. [Masters Thesis]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/42922

21. Bouderbala, Rachid. Charge-extraction technique for studying the surface-states in MOS devices.

Degree: 1992, Université M'Hamed Bougara Boumerdès

198 p. : ill. ; 30 cm

Subjects/Keywords: MOS (électronique); Metal oxide semiconductors

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APA (6th Edition):

Bouderbala, R. (1992). Charge-extraction technique for studying the surface-states in MOS devices. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080123456789/1466

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bouderbala, Rachid. “Charge-extraction technique for studying the surface-states in MOS devices.” 1992. Thesis, Université M'Hamed Bougara Boumerdès. Accessed May 30, 2020. http://dlibrary.univ-boumerdes.dz:8080123456789/1466.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bouderbala, Rachid. “Charge-extraction technique for studying the surface-states in MOS devices.” 1992. Web. 30 May 2020.

Vancouver:

Bouderbala R. Charge-extraction technique for studying the surface-states in MOS devices. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 1992. [cited 2020 May 30]. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1466.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bouderbala R. Charge-extraction technique for studying the surface-states in MOS devices. [Thesis]. Université M'Hamed Bougara Boumerdès; 1992. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1466

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

22. Rahmoune, Fayçal. Experimental investigation of the charge pumping current in integrated MOS transistors.

Degree: 1998, Université M'Hamed Bougara Boumerdès

 <p>80 p. : ill. ; 30 cm p><p>The aim of this work is the investigation of the charge pumping technique through the variation of the… (more)

Subjects/Keywords: MOS (électronique); Metal oxide semiconductors

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APA (6th Edition):

Rahmoune, F. (1998). Experimental investigation of the charge pumping current in integrated MOS transistors. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080123456789/1550

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rahmoune, Fayçal. “Experimental investigation of the charge pumping current in integrated MOS transistors.” 1998. Thesis, Université M'Hamed Bougara Boumerdès. Accessed May 30, 2020. http://dlibrary.univ-boumerdes.dz:8080123456789/1550.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rahmoune, Fayçal. “Experimental investigation of the charge pumping current in integrated MOS transistors.” 1998. Web. 30 May 2020.

Vancouver:

Rahmoune F. Experimental investigation of the charge pumping current in integrated MOS transistors. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 1998. [cited 2020 May 30]. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1550.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rahmoune F. Experimental investigation of the charge pumping current in integrated MOS transistors. [Thesis]. Université M'Hamed Bougara Boumerdès; 1998. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1550

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Maine

23. Waghe, Anil Bhalchandra. Synthesis of Porous Monoclinic Tungsten Oxides and Their Application in Sensors.

Degree: PhD, Chemistry, 2003, University of Maine

  Semiconducting metal oxide sensors are limited in their usage because of their poor detection selectivity. The current approach to achieve better selectivity in SMO… (more)

Subjects/Keywords: Metal oxide semiconductors; Chemistry

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APA (6th Edition):

Waghe, A. B. (2003). Synthesis of Porous Monoclinic Tungsten Oxides and Their Application in Sensors. (Doctoral Dissertation). University of Maine. Retrieved from https://digitalcommons.library.umaine.edu/etd/203

Chicago Manual of Style (16th Edition):

Waghe, Anil Bhalchandra. “Synthesis of Porous Monoclinic Tungsten Oxides and Their Application in Sensors.” 2003. Doctoral Dissertation, University of Maine. Accessed May 30, 2020. https://digitalcommons.library.umaine.edu/etd/203.

MLA Handbook (7th Edition):

Waghe, Anil Bhalchandra. “Synthesis of Porous Monoclinic Tungsten Oxides and Their Application in Sensors.” 2003. Web. 30 May 2020.

Vancouver:

Waghe AB. Synthesis of Porous Monoclinic Tungsten Oxides and Their Application in Sensors. [Internet] [Doctoral dissertation]. University of Maine; 2003. [cited 2020 May 30]. Available from: https://digitalcommons.library.umaine.edu/etd/203.

Council of Science Editors:

Waghe AB. Synthesis of Porous Monoclinic Tungsten Oxides and Their Application in Sensors. [Doctoral Dissertation]. University of Maine; 2003. Available from: https://digitalcommons.library.umaine.edu/etd/203


University of Edinburgh

24. Carruthers, Colin. Low noise operation in deep depletion mode MOS transistors.

Degree: PhD, 1989, University of Edinburgh

Subjects/Keywords: 530.41; Metal oxide semiconductors

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APA (6th Edition):

Carruthers, C. (1989). Low noise operation in deep depletion mode MOS transistors. (Doctoral Dissertation). University of Edinburgh. Retrieved from http://hdl.handle.net/1842/10866

Chicago Manual of Style (16th Edition):

Carruthers, Colin. “Low noise operation in deep depletion mode MOS transistors.” 1989. Doctoral Dissertation, University of Edinburgh. Accessed May 30, 2020. http://hdl.handle.net/1842/10866.

MLA Handbook (7th Edition):

Carruthers, Colin. “Low noise operation in deep depletion mode MOS transistors.” 1989. Web. 30 May 2020.

Vancouver:

Carruthers C. Low noise operation in deep depletion mode MOS transistors. [Internet] [Doctoral dissertation]. University of Edinburgh; 1989. [cited 2020 May 30]. Available from: http://hdl.handle.net/1842/10866.

Council of Science Editors:

Carruthers C. Low noise operation in deep depletion mode MOS transistors. [Doctoral Dissertation]. University of Edinburgh; 1989. Available from: http://hdl.handle.net/1842/10866


Oregon State University

25. Sadate, Aline C. A substrate noise coupling model for lightly doped CMOS processes.

Degree: MS, Electrical and Computer Engineering, 2000, Oregon State University

 This thesis presents a design-oriented model for lightly doped CMOS substrates. The model predicts the substrate noise coupling between noisy digital and sensitive analog blocks… (more)

Subjects/Keywords: Metal oxide semiconductors; Complementary

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APA (6th Edition):

Sadate, A. C. (2000). A substrate noise coupling model for lightly doped CMOS processes. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/8280

Chicago Manual of Style (16th Edition):

Sadate, Aline C. “A substrate noise coupling model for lightly doped CMOS processes.” 2000. Masters Thesis, Oregon State University. Accessed May 30, 2020. http://hdl.handle.net/1957/8280.

MLA Handbook (7th Edition):

Sadate, Aline C. “A substrate noise coupling model for lightly doped CMOS processes.” 2000. Web. 30 May 2020.

Vancouver:

Sadate AC. A substrate noise coupling model for lightly doped CMOS processes. [Internet] [Masters thesis]. Oregon State University; 2000. [cited 2020 May 30]. Available from: http://hdl.handle.net/1957/8280.

Council of Science Editors:

Sadate AC. A substrate noise coupling model for lightly doped CMOS processes. [Masters Thesis]. Oregon State University; 2000. Available from: http://hdl.handle.net/1957/8280


Oregon State University

26. Sharma, Ajit. Predictive methodologies for substrate parasitic extraction and modeling in heavily doped CMOS substrates.

Degree: MS, Electrical and Computer Engineering, 2003, Oregon State University

 This thesis presents an automated methodology to calibrate the substrate profile for accurate prediction of substrate parasitics using Green's function based extractors. The technique requires… (more)

Subjects/Keywords: Metal oxide semiconductors; Complementary

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APA (6th Edition):

Sharma, A. (2003). Predictive methodologies for substrate parasitic extraction and modeling in heavily doped CMOS substrates. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/31842

Chicago Manual of Style (16th Edition):

Sharma, Ajit. “Predictive methodologies for substrate parasitic extraction and modeling in heavily doped CMOS substrates.” 2003. Masters Thesis, Oregon State University. Accessed May 30, 2020. http://hdl.handle.net/1957/31842.

MLA Handbook (7th Edition):

Sharma, Ajit. “Predictive methodologies for substrate parasitic extraction and modeling in heavily doped CMOS substrates.” 2003. Web. 30 May 2020.

Vancouver:

Sharma A. Predictive methodologies for substrate parasitic extraction and modeling in heavily doped CMOS substrates. [Internet] [Masters thesis]. Oregon State University; 2003. [cited 2020 May 30]. Available from: http://hdl.handle.net/1957/31842.

Council of Science Editors:

Sharma A. Predictive methodologies for substrate parasitic extraction and modeling in heavily doped CMOS substrates. [Masters Thesis]. Oregon State University; 2003. Available from: http://hdl.handle.net/1957/31842


Oregon State University

27. Maskai, Sailesh R. Design of complex digital blocks using folded source-coupled logic for mixed-mode applications.

Degree: MS, Electrical and Computer Engineering, 1991, Oregon State University

 A series of complex digital blocks have been designed and fabricated using the newly developed current-mode differential CMOS logic family viz. the Folded Source-Coupled Logic… (more)

Subjects/Keywords: Metal oxide semiconductors; Complementary

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Maskai, S. R. (1991). Design of complex digital blocks using folded source-coupled logic for mixed-mode applications. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/37131

Chicago Manual of Style (16th Edition):

Maskai, Sailesh R. “Design of complex digital blocks using folded source-coupled logic for mixed-mode applications.” 1991. Masters Thesis, Oregon State University. Accessed May 30, 2020. http://hdl.handle.net/1957/37131.

MLA Handbook (7th Edition):

Maskai, Sailesh R. “Design of complex digital blocks using folded source-coupled logic for mixed-mode applications.” 1991. Web. 30 May 2020.

Vancouver:

Maskai SR. Design of complex digital blocks using folded source-coupled logic for mixed-mode applications. [Internet] [Masters thesis]. Oregon State University; 1991. [cited 2020 May 30]. Available from: http://hdl.handle.net/1957/37131.

Council of Science Editors:

Maskai SR. Design of complex digital blocks using folded source-coupled logic for mixed-mode applications. [Masters Thesis]. Oregon State University; 1991. Available from: http://hdl.handle.net/1957/37131


Oregon State University

28. Fiez, Theresa S. Design of CMOS switched-current filters.

Degree: PhD, Electrical and Computer Engineering, 1990, Oregon State University

 The design and implementation of Switched-Current (SI) ladder filters is described. SI filters require only a standard digital CMOS process and the power supply voltage… (more)

Subjects/Keywords: Metal oxide semiconductors; Complementary

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APA (6th Edition):

Fiez, T. S. (1990). Design of CMOS switched-current filters. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/37183

Chicago Manual of Style (16th Edition):

Fiez, Theresa S. “Design of CMOS switched-current filters.” 1990. Doctoral Dissertation, Oregon State University. Accessed May 30, 2020. http://hdl.handle.net/1957/37183.

MLA Handbook (7th Edition):

Fiez, Theresa S. “Design of CMOS switched-current filters.” 1990. Web. 30 May 2020.

Vancouver:

Fiez TS. Design of CMOS switched-current filters. [Internet] [Doctoral dissertation]. Oregon State University; 1990. [cited 2020 May 30]. Available from: http://hdl.handle.net/1957/37183.

Council of Science Editors:

Fiez TS. Design of CMOS switched-current filters. [Doctoral Dissertation]. Oregon State University; 1990. Available from: http://hdl.handle.net/1957/37183

29. Bouderbala, Rachid. Charge-extraction technique for studying the surface-states in MOS devices.

Degree: 1992, Université M'Hamed Bougara Boumerdès

198 p. ; ill. ; 30 cm

Subjects/Keywords: MOS (électronique); Metal oxide semiconductors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bouderbala, R. (1992). Charge-extraction technique for studying the surface-states in MOS devices. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1074

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bouderbala, Rachid. “Charge-extraction technique for studying the surface-states in MOS devices.” 1992. Thesis, Université M'Hamed Bougara Boumerdès. Accessed May 30, 2020. http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1074.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bouderbala, Rachid. “Charge-extraction technique for studying the surface-states in MOS devices.” 1992. Web. 30 May 2020.

Vancouver:

Bouderbala R. Charge-extraction technique for studying the surface-states in MOS devices. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 1992. [cited 2020 May 30]. Available from: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1074.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bouderbala R. Charge-extraction technique for studying the surface-states in MOS devices. [Thesis]. Université M'Hamed Bougara Boumerdès; 1992. Available from: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1074

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

30. Rahmoune, Fayçal. Experimental investigation of the charge pumping current in integrated MOS transistors.

Degree: 1998, Université M'Hamed Bougara Boumerdès

 <p>80 p. ; ill. ; 30 cm p><p>The aim of this work is the investigation of the charge pumping technique through the variation of the… (more)

Subjects/Keywords: MOS (électronique); Metal oxide semiconductors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rahmoune, F. (1998). Experimental investigation of the charge pumping current in integrated MOS transistors. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1091

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rahmoune, Fayçal. “Experimental investigation of the charge pumping current in integrated MOS transistors.” 1998. Thesis, Université M'Hamed Bougara Boumerdès. Accessed May 30, 2020. http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1091.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rahmoune, Fayçal. “Experimental investigation of the charge pumping current in integrated MOS transistors.” 1998. Web. 30 May 2020.

Vancouver:

Rahmoune F. Experimental investigation of the charge pumping current in integrated MOS transistors. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 1998. [cited 2020 May 30]. Available from: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1091.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rahmoune F. Experimental investigation of the charge pumping current in integrated MOS transistors. [Thesis]. Université M'Hamed Bougara Boumerdès; 1998. Available from: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1091

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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