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You searched for subject:(Oxide based resistive memories OxRRAM). Showing records 1 – 30 of 33087 total matches.

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Université de Sherbrooke

1. Labalette, Marina. Intégration 3D de mémoires résistives complémentaires dans le back-end-of-line du CMOS .

Degree: 2018, Université de Sherbrooke

 Les dispositifs mémoires résistives, notamment ceux à base d’oxyde de commutation OxRRAM, se placent parmi les dispositifs mémoires émergentes les plus attractifs pour remplacer les… (more)

Subjects/Keywords: Filière CMOS; Mémoires résistives OxRRAM; Dispositifs CRS; Intégration monolithique BEOL; Caractérisations en mode QS et pulsé; Architecture mémoire haute densité; Configuration 1T1R; Oxide based resistive memories OxRRAM; CRS dispositive; CMOS BEOL; 3D monolithic integration; DC and pulsed electrical characterization; High density of integration; 1T1R configuration

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Labalette, M. (2018). Intégration 3D de mémoires résistives complémentaires dans le back-end-of-line du CMOS . (Doctoral Dissertation). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/12267

Chicago Manual of Style (16th Edition):

Labalette, Marina. “Intégration 3D de mémoires résistives complémentaires dans le back-end-of-line du CMOS .” 2018. Doctoral Dissertation, Université de Sherbrooke. Accessed January 24, 2020. http://hdl.handle.net/11143/12267.

MLA Handbook (7th Edition):

Labalette, Marina. “Intégration 3D de mémoires résistives complémentaires dans le back-end-of-line du CMOS .” 2018. Web. 24 Jan 2020.

Vancouver:

Labalette M. Intégration 3D de mémoires résistives complémentaires dans le back-end-of-line du CMOS . [Internet] [Doctoral dissertation]. Université de Sherbrooke; 2018. [cited 2020 Jan 24]. Available from: http://hdl.handle.net/11143/12267.

Council of Science Editors:

Labalette M. Intégration 3D de mémoires résistives complémentaires dans le back-end-of-line du CMOS . [Doctoral Dissertation]. Université de Sherbrooke; 2018. Available from: http://hdl.handle.net/11143/12267

2. Labalette, Marina. Intégration 3D de dispositifs mémoires résistives complémentaires dans le back end of line du CMOS : 3D integration of complementary resistive switching devices in CMOS back end of line.

Degree: Docteur es, Electronique, électrotechnique et automatique, 2018, Lyon; Université de Sherbrooke (Québec, Canada)

La gestion, la manipulation et le stockage de données sont aujourd’hui de réels challenges. Pour supporter cette réalité, le besoin de technologies mémoires plus efficaces,… (more)

Subjects/Keywords: Electronique; Microélectronique; Mémoires en microélectronique; Filière CMOS; Mémoires résistives OxRRAM; Mémoires resistives complémentaires - CRS; Intégration monolithique BEOL - back end of line; Caractérisation électrique en mode quasi statique - QS; Caractérisation électrique en mode pulsé; Architecture de mémoire haute densité; Configuration 1T1R; Procédé nanodamascène; Electronics; Microelectronics; Memory on Silicon; Oxide based resistive memories OxRRAM; Complementary resistive switching devices - CRS; Cmos beol; 3D monolithic integration; DC and pulsed electrical characterization; High density integration; 1T1R configuration; 621.397 072

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APA (6th Edition):

Labalette, M. (2018). Intégration 3D de dispositifs mémoires résistives complémentaires dans le back end of line du CMOS : 3D integration of complementary resistive switching devices in CMOS back end of line. (Doctoral Dissertation). Lyon; Université de Sherbrooke (Québec, Canada). Retrieved from http://www.theses.fr/2018LYSEI037

Chicago Manual of Style (16th Edition):

Labalette, Marina. “Intégration 3D de dispositifs mémoires résistives complémentaires dans le back end of line du CMOS : 3D integration of complementary resistive switching devices in CMOS back end of line.” 2018. Doctoral Dissertation, Lyon; Université de Sherbrooke (Québec, Canada). Accessed January 24, 2020. http://www.theses.fr/2018LYSEI037.

MLA Handbook (7th Edition):

Labalette, Marina. “Intégration 3D de dispositifs mémoires résistives complémentaires dans le back end of line du CMOS : 3D integration of complementary resistive switching devices in CMOS back end of line.” 2018. Web. 24 Jan 2020.

Vancouver:

Labalette M. Intégration 3D de dispositifs mémoires résistives complémentaires dans le back end of line du CMOS : 3D integration of complementary resistive switching devices in CMOS back end of line. [Internet] [Doctoral dissertation]. Lyon; Université de Sherbrooke (Québec, Canada); 2018. [cited 2020 Jan 24]. Available from: http://www.theses.fr/2018LYSEI037.

Council of Science Editors:

Labalette M. Intégration 3D de dispositifs mémoires résistives complémentaires dans le back end of line du CMOS : 3D integration of complementary resistive switching devices in CMOS back end of line. [Doctoral Dissertation]. Lyon; Université de Sherbrooke (Québec, Canada); 2018. Available from: http://www.theses.fr/2018LYSEI037


RMIT University

3. Ahmed, T. Tuning resistive switching in complex oxide memristors.

Degree: 2017, RMIT University

 The continuous demand of lightweight portable, cheap and low-power devices has pushed the electronic industry to the limits of the current technology. Flash memory technology… (more)

Subjects/Keywords: Fields of Research; resistive memory; strontium titanate; resistive switching; perovskite oxide; artificial synapse; transparent memories

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APA (6th Edition):

Ahmed, T. (2017). Tuning resistive switching in complex oxide memristors. (Thesis). RMIT University. Retrieved from http://researchbank.rmit.edu.au/view/rmit:162294

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ahmed, T. “Tuning resistive switching in complex oxide memristors.” 2017. Thesis, RMIT University. Accessed January 24, 2020. http://researchbank.rmit.edu.au/view/rmit:162294.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ahmed, T. “Tuning resistive switching in complex oxide memristors.” 2017. Web. 24 Jan 2020.

Vancouver:

Ahmed T. Tuning resistive switching in complex oxide memristors. [Internet] [Thesis]. RMIT University; 2017. [cited 2020 Jan 24]. Available from: http://researchbank.rmit.edu.au/view/rmit:162294.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ahmed T. Tuning resistive switching in complex oxide memristors. [Thesis]. RMIT University; 2017. Available from: http://researchbank.rmit.edu.au/view/rmit:162294

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


RMIT University

4. Ahmed, T. Tuning resistive switching in complex oxide memristors.

Degree: 2017, RMIT University

 The continuous demand of lightweight portable, cheap and low-power devices has pushed the electronic industry to the limits of the current technology. Flash memory technology… (more)

Subjects/Keywords: Fields of Research; resistive memory; strontium titanate; resistive switching; perovskite oxide; artificial synapse; transparent memories

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ahmed, T. (2017). Tuning resistive switching in complex oxide memristors. (Thesis). RMIT University. Retrieved from http://researchbank.rmit.edu.au/view/rmit:162295

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ahmed, T. “Tuning resistive switching in complex oxide memristors.” 2017. Thesis, RMIT University. Accessed January 24, 2020. http://researchbank.rmit.edu.au/view/rmit:162295.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ahmed, T. “Tuning resistive switching in complex oxide memristors.” 2017. Web. 24 Jan 2020.

Vancouver:

Ahmed T. Tuning resistive switching in complex oxide memristors. [Internet] [Thesis]. RMIT University; 2017. [cited 2020 Jan 24]. Available from: http://researchbank.rmit.edu.au/view/rmit:162295.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ahmed T. Tuning resistive switching in complex oxide memristors. [Thesis]. RMIT University; 2017. Available from: http://researchbank.rmit.edu.au/view/rmit:162295

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

5. Cabout, Thomas. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications.

Degree: Docteur es, Micro et Nanoélectronique, 2014, Aix Marseille Université

Aujourd'hui, le marché des mémoires non-volatile est dominé par la technologie Flash. Cependant, cette technologie est en passe d'atteindre ses limites de miniaturisation. Ainsi, dans… (more)

Subjects/Keywords: Mémoire; Rram; OxRRAM; Commutation; Résistance; Oxyde; HfO2; Memory; Rram; OxRRAM; Commutation; Resistance; Oxide; HfO2

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APA (6th Edition):

Cabout, T. (2014). Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2014AIXM4778

Chicago Manual of Style (16th Edition):

Cabout, Thomas. “Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications.” 2014. Doctoral Dissertation, Aix Marseille Université. Accessed January 24, 2020. http://www.theses.fr/2014AIXM4778.

MLA Handbook (7th Edition):

Cabout, Thomas. “Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications.” 2014. Web. 24 Jan 2020.

Vancouver:

Cabout T. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications. [Internet] [Doctoral dissertation]. Aix Marseille Université 2014. [cited 2020 Jan 24]. Available from: http://www.theses.fr/2014AIXM4778.

Council of Science Editors:

Cabout T. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications. [Doctoral Dissertation]. Aix Marseille Université 2014. Available from: http://www.theses.fr/2014AIXM4778

6. Dewolf, Tristan. Nano-caractérisation des mécanismes de commutation dans les mémoires résistives à base d'HfO2 : Nano-characterization of switching mechanism in HfO2-based resistive memories.

Degree: Docteur es, Physique de la matière, 2018, Université Toulouse III – Paul Sabatier

Le numérique prend une place de plus en plus importante dans la vie de tous les jours et les quantités de données échangées explosent ce… (more)

Subjects/Keywords: Mémoires résistives; OxRRAM; Lacunes d'oxygène; Migration de Ti; TEM; EELS; Resistives memories; OxRRAM; Oxygen vacancies; Ti migration; TEM; EELS

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APA (6th Edition):

Dewolf, T. (2018). Nano-caractérisation des mécanismes de commutation dans les mémoires résistives à base d'HfO2 : Nano-characterization of switching mechanism in HfO2-based resistive memories. (Doctoral Dissertation). Université Toulouse III – Paul Sabatier. Retrieved from http://www.theses.fr/2018TOU30223

Chicago Manual of Style (16th Edition):

Dewolf, Tristan. “Nano-caractérisation des mécanismes de commutation dans les mémoires résistives à base d'HfO2 : Nano-characterization of switching mechanism in HfO2-based resistive memories.” 2018. Doctoral Dissertation, Université Toulouse III – Paul Sabatier. Accessed January 24, 2020. http://www.theses.fr/2018TOU30223.

MLA Handbook (7th Edition):

Dewolf, Tristan. “Nano-caractérisation des mécanismes de commutation dans les mémoires résistives à base d'HfO2 : Nano-characterization of switching mechanism in HfO2-based resistive memories.” 2018. Web. 24 Jan 2020.

Vancouver:

Dewolf T. Nano-caractérisation des mécanismes de commutation dans les mémoires résistives à base d'HfO2 : Nano-characterization of switching mechanism in HfO2-based resistive memories. [Internet] [Doctoral dissertation]. Université Toulouse III – Paul Sabatier; 2018. [cited 2020 Jan 24]. Available from: http://www.theses.fr/2018TOU30223.

Council of Science Editors:

Dewolf T. Nano-caractérisation des mécanismes de commutation dans les mémoires résistives à base d'HfO2 : Nano-characterization of switching mechanism in HfO2-based resistive memories. [Doctoral Dissertation]. Université Toulouse III – Paul Sabatier; 2018. Available from: http://www.theses.fr/2018TOU30223


University of Rochester

7. Patel, Ravi (1986 - ). Memristive circuits for on-chip memories.

Degree: PhD, 2016, University of Rochester

 In less then a decade, memristors have evolved from an emerging device technology, to a promising circuit concept, and now a commercial product. This accelerated… (more)

Subjects/Keywords: CMOS; Memories; Memristors; Resistive Memories; RRAM; STT-MRAM; VLSI

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APA (6th Edition):

Patel, R. (. -. ). (2016). Memristive circuits for on-chip memories. (Doctoral Dissertation). University of Rochester. Retrieved from http://hdl.handle.net/1802/30636

Chicago Manual of Style (16th Edition):

Patel, Ravi (1986 - ). “Memristive circuits for on-chip memories.” 2016. Doctoral Dissertation, University of Rochester. Accessed January 24, 2020. http://hdl.handle.net/1802/30636.

MLA Handbook (7th Edition):

Patel, Ravi (1986 - ). “Memristive circuits for on-chip memories.” 2016. Web. 24 Jan 2020.

Vancouver:

Patel R(-). Memristive circuits for on-chip memories. [Internet] [Doctoral dissertation]. University of Rochester; 2016. [cited 2020 Jan 24]. Available from: http://hdl.handle.net/1802/30636.

Council of Science Editors:

Patel R(-). Memristive circuits for on-chip memories. [Doctoral Dissertation]. University of Rochester; 2016. Available from: http://hdl.handle.net/1802/30636


Rochester Institute of Technology

8. Kumar, Shaurya. Investigation of bolometric and resistive properties of nickel oxide.

Degree: Center for Materials Science and Engineering, 2012, Rochester Institute of Technology

 This work investigates the properties of nickel oxide for use in microbolometric and resistive memory applications. For the uncooled infrared radiation detector industry, the current… (more)

Subjects/Keywords: Microbolometer; Nickel oxide; Resistive memory

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APA (6th Edition):

Kumar, S. (2012). Investigation of bolometric and resistive properties of nickel oxide. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/2752

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kumar, Shaurya. “Investigation of bolometric and resistive properties of nickel oxide.” 2012. Thesis, Rochester Institute of Technology. Accessed January 24, 2020. https://scholarworks.rit.edu/theses/2752.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kumar, Shaurya. “Investigation of bolometric and resistive properties of nickel oxide.” 2012. Web. 24 Jan 2020.

Vancouver:

Kumar S. Investigation of bolometric and resistive properties of nickel oxide. [Internet] [Thesis]. Rochester Institute of Technology; 2012. [cited 2020 Jan 24]. Available from: https://scholarworks.rit.edu/theses/2752.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kumar S. Investigation of bolometric and resistive properties of nickel oxide. [Thesis]. Rochester Institute of Technology; 2012. Available from: https://scholarworks.rit.edu/theses/2752

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rutgers University

9. Zhang, Yang, 1983-. Zinc oxide-based resistive switching devices.

Degree: PhD, Electrical and Computer Engineering, 2014, Rutgers University

Recently, resistive switching (RS) memory devices have attracted increasing attentions due to their potential applications in the next-generation nonvolatile memory. Zinc Oxide (ZnO) - based(more)

Subjects/Keywords: Flash memories (Computers); Zinc oxide

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APA (6th Edition):

Zhang, Yang, 1. (2014). Zinc oxide-based resistive switching devices. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/45593/

Chicago Manual of Style (16th Edition):

Zhang, Yang, 1983-. “Zinc oxide-based resistive switching devices.” 2014. Doctoral Dissertation, Rutgers University. Accessed January 24, 2020. https://rucore.libraries.rutgers.edu/rutgers-lib/45593/.

MLA Handbook (7th Edition):

Zhang, Yang, 1983-. “Zinc oxide-based resistive switching devices.” 2014. Web. 24 Jan 2020.

Vancouver:

Zhang, Yang 1. Zinc oxide-based resistive switching devices. [Internet] [Doctoral dissertation]. Rutgers University; 2014. [cited 2020 Jan 24]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/45593/.

Council of Science Editors:

Zhang, Yang 1. Zinc oxide-based resistive switching devices. [Doctoral Dissertation]. Rutgers University; 2014. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/45593/

10. Benoist, Antoine. Pre and post breakdwon modeling of high-k dielectrics regarding antifuse and OxRAM non-volatile memories : Modélisation pre et post claquage de diélectriques à haute permittivité dans le cadres des mémoires non volatiles antifuse et OxRAM.

Degree: Docteur es, Génie électrique, 2017, Lyon

Les mémoires non volatiles intégrées représentent une part importante du marché des semi-conducteurs. Bien qu'il s'adresse à de nombreuses applications différentes, ce type de mémoire… (more)

Subjects/Keywords: Electronique de puissance; Haute tension; TDDB - time-Dependent dielectric breakdown; OxRAM - oxide-Based resistive memory; Haute permittivité; Post-Claquage; CMOS avancé; Distribution de courant; Power Electronics; High Voltage; Time-Dependent dielectric breakdown (TDDB); OxRAM - oxide-Based resistive memory; Post breakdown; Advanced CMOS; Read Current Yield; 621.317 072

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APA (6th Edition):

Benoist, A. (2017). Pre and post breakdwon modeling of high-k dielectrics regarding antifuse and OxRAM non-volatile memories : Modélisation pre et post claquage de diélectriques à haute permittivité dans le cadres des mémoires non volatiles antifuse et OxRAM. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSEI007

Chicago Manual of Style (16th Edition):

Benoist, Antoine. “Pre and post breakdwon modeling of high-k dielectrics regarding antifuse and OxRAM non-volatile memories : Modélisation pre et post claquage de diélectriques à haute permittivité dans le cadres des mémoires non volatiles antifuse et OxRAM.” 2017. Doctoral Dissertation, Lyon. Accessed January 24, 2020. http://www.theses.fr/2017LYSEI007.

MLA Handbook (7th Edition):

Benoist, Antoine. “Pre and post breakdwon modeling of high-k dielectrics regarding antifuse and OxRAM non-volatile memories : Modélisation pre et post claquage de diélectriques à haute permittivité dans le cadres des mémoires non volatiles antifuse et OxRAM.” 2017. Web. 24 Jan 2020.

Vancouver:

Benoist A. Pre and post breakdwon modeling of high-k dielectrics regarding antifuse and OxRAM non-volatile memories : Modélisation pre et post claquage de diélectriques à haute permittivité dans le cadres des mémoires non volatiles antifuse et OxRAM. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2020 Jan 24]. Available from: http://www.theses.fr/2017LYSEI007.

Council of Science Editors:

Benoist A. Pre and post breakdwon modeling of high-k dielectrics regarding antifuse and OxRAM non-volatile memories : Modélisation pre et post claquage de diélectriques à haute permittivité dans le cadres des mémoires non volatiles antifuse et OxRAM. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSEI007

11. Piccolboni, Giuseppe. Etude et intégration de mémoires résistives 3D pour application haute densité : Study and integration of 3D resistive memories for high density application.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2016, Grenoble Alpes

 Le but de cette thèse était de caractériser et d’aider au développement des premières mémoires résistives verticales (VRRAM) fabriquées au LETI. Parmi les mémoires émergentes,… (more)

Subjects/Keywords: Memoires; Resistives; Integration; 3d; Memories; Resistive; Integration; 3d; 620

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APA (6th Edition):

Piccolboni, G. (2016). Etude et intégration de mémoires résistives 3D pour application haute densité : Study and integration of 3D resistive memories for high density application. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAT062

Chicago Manual of Style (16th Edition):

Piccolboni, Giuseppe. “Etude et intégration de mémoires résistives 3D pour application haute densité : Study and integration of 3D resistive memories for high density application.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed January 24, 2020. http://www.theses.fr/2016GREAT062.

MLA Handbook (7th Edition):

Piccolboni, Giuseppe. “Etude et intégration de mémoires résistives 3D pour application haute densité : Study and integration of 3D resistive memories for high density application.” 2016. Web. 24 Jan 2020.

Vancouver:

Piccolboni G. Etude et intégration de mémoires résistives 3D pour application haute densité : Study and integration of 3D resistive memories for high density application. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2020 Jan 24]. Available from: http://www.theses.fr/2016GREAT062.

Council of Science Editors:

Piccolboni G. Etude et intégration de mémoires résistives 3D pour application haute densité : Study and integration of 3D resistive memories for high density application. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAT062

12. Werner, Thilo. Réseaux de neurones impulsionnels basés sur les mémoires résistives pour l'analyse de données neuronales : Spiking neural networks based on resistive memory technologies for neural data analysis.

Degree: Docteur es, Nano-électronique et nano-technologies, 2017, Grenoble Alpes

Le système nerveux central humain est un système de traitement de l'information stupéfiant en termes de capacités, de polyvalence, d’adaptabilité et de faible consommation d'énergie.… (more)

Subjects/Keywords: Mémoires résistives; Neurosciences; Métrologie; Resistive memories; Neuroscience; Metrology; 610; 620

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APA (6th Edition):

Werner, T. (2017). Réseaux de neurones impulsionnels basés sur les mémoires résistives pour l'analyse de données neuronales : Spiking neural networks based on resistive memory technologies for neural data analysis. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2017GREAS028

Chicago Manual of Style (16th Edition):

Werner, Thilo. “Réseaux de neurones impulsionnels basés sur les mémoires résistives pour l'analyse de données neuronales : Spiking neural networks based on resistive memory technologies for neural data analysis.” 2017. Doctoral Dissertation, Grenoble Alpes. Accessed January 24, 2020. http://www.theses.fr/2017GREAS028.

MLA Handbook (7th Edition):

Werner, Thilo. “Réseaux de neurones impulsionnels basés sur les mémoires résistives pour l'analyse de données neuronales : Spiking neural networks based on resistive memory technologies for neural data analysis.” 2017. Web. 24 Jan 2020.

Vancouver:

Werner T. Réseaux de neurones impulsionnels basés sur les mémoires résistives pour l'analyse de données neuronales : Spiking neural networks based on resistive memory technologies for neural data analysis. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2017. [cited 2020 Jan 24]. Available from: http://www.theses.fr/2017GREAS028.

Council of Science Editors:

Werner T. Réseaux de neurones impulsionnels basés sur les mémoires résistives pour l'analyse de données neuronales : Spiking neural networks based on resistive memory technologies for neural data analysis. [Doctoral Dissertation]. Grenoble Alpes; 2017. Available from: http://www.theses.fr/2017GREAS028


University of New South Wales

13. Yang, Jian. Resistive switching properties of p-type cobalt oxide thin films and devices.

Degree: Materials Science & Engineering, 2018, University of New South Wales

 Conventional semiconductor memories have encountered their limitations for sustained advance in data processing and storage technologies. One emerging memory, the resistive random access memory (RRAM),… (more)

Subjects/Keywords: Thin films; Resistive switching; Cobalt oxide

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APA (6th Edition):

Yang, J. (2018). Resistive switching properties of p-type cobalt oxide thin films and devices. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/59580 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:49004/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Yang, Jian. “Resistive switching properties of p-type cobalt oxide thin films and devices.” 2018. Doctoral Dissertation, University of New South Wales. Accessed January 24, 2020. http://handle.unsw.edu.au/1959.4/59580 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:49004/SOURCE02?view=true.

MLA Handbook (7th Edition):

Yang, Jian. “Resistive switching properties of p-type cobalt oxide thin films and devices.” 2018. Web. 24 Jan 2020.

Vancouver:

Yang J. Resistive switching properties of p-type cobalt oxide thin films and devices. [Internet] [Doctoral dissertation]. University of New South Wales; 2018. [cited 2020 Jan 24]. Available from: http://handle.unsw.edu.au/1959.4/59580 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:49004/SOURCE02?view=true.

Council of Science Editors:

Yang J. Resistive switching properties of p-type cobalt oxide thin films and devices. [Doctoral Dissertation]. University of New South Wales; 2018. Available from: http://handle.unsw.edu.au/1959.4/59580 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:49004/SOURCE02?view=true


University of New South Wales

14. Lin, Xi. Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications.

Degree: Materials Science & Engineering, 2013, University of New South Wales

Resistive random access memory (RRAM), one of the next generation memory technologies, has been drawn a lot of attention in both fundamental and applied research.… (more)

Subjects/Keywords: Nanocubes; Resistive random access memory; Perovskite oxide

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APA (6th Edition):

Lin, X. (2013). Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications. (Masters Thesis). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/52770 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11443/SOURCE01?view=true

Chicago Manual of Style (16th Edition):

Lin, Xi. “Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications.” 2013. Masters Thesis, University of New South Wales. Accessed January 24, 2020. http://handle.unsw.edu.au/1959.4/52770 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11443/SOURCE01?view=true.

MLA Handbook (7th Edition):

Lin, Xi. “Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications.” 2013. Web. 24 Jan 2020.

Vancouver:

Lin X. Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications. [Internet] [Masters thesis]. University of New South Wales; 2013. [cited 2020 Jan 24]. Available from: http://handle.unsw.edu.au/1959.4/52770 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11443/SOURCE01?view=true.

Council of Science Editors:

Lin X. Synthesis and characterization of self-assembled Perovskite oxide nanocubes for resistive random access memory applications. [Masters Thesis]. University of New South Wales; 2013. Available from: http://handle.unsw.edu.au/1959.4/52770 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11443/SOURCE01?view=true

15. Foissac, Romain. Etude à l'échelle nanométrique par sonde locale de la fiabilité et de la dégradation de films minces d'oxyde pour applications MOS et MIM : Study of the reliability and degradation of ultra-thin oxide layers at nanometric scale by scanning probe microscopy for MOS and MIM applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes

L'intégration de diélectriques High-k dans les empilements de grille des dispositifs MOS a fait naître de nouvelles interrogations concernant la fiabilité des futurs nœuds technologiques.… (more)

Subjects/Keywords: Fiabilité; Microscopie à force atomique en mode conduction; TDDB; Métaloxyde semi conducteur; Oxyde bicouche; Filament; Résistance différentielle négative; Caractérisation électrique; Microélectronique; Nanoélectronique; Ultravide; Pulse; ESD; MIM; Mémoires résistives; Reliability; Atomic force microscopy in conductive mode; TDDB; Métal oxyde semi conductor; Bilayer oxide stack; Filament; Negative differential resistance; Electrical caracterisation; Microelectronics; Nanoelectronics; Ultra high vacuum; Pulse; ESD; MIM; Oxide resistive memories; 620

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APA (6th Edition):

Foissac, R. (2015). Etude à l'échelle nanométrique par sonde locale de la fiabilité et de la dégradation de films minces d'oxyde pour applications MOS et MIM : Study of the reliability and degradation of ultra-thin oxide layers at nanometric scale by scanning probe microscopy for MOS and MIM applications. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAT047

Chicago Manual of Style (16th Edition):

Foissac, Romain. “Etude à l'échelle nanométrique par sonde locale de la fiabilité et de la dégradation de films minces d'oxyde pour applications MOS et MIM : Study of the reliability and degradation of ultra-thin oxide layers at nanometric scale by scanning probe microscopy for MOS and MIM applications.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed January 24, 2020. http://www.theses.fr/2015GREAT047.

MLA Handbook (7th Edition):

Foissac, Romain. “Etude à l'échelle nanométrique par sonde locale de la fiabilité et de la dégradation de films minces d'oxyde pour applications MOS et MIM : Study of the reliability and degradation of ultra-thin oxide layers at nanometric scale by scanning probe microscopy for MOS and MIM applications.” 2015. Web. 24 Jan 2020.

Vancouver:

Foissac R. Etude à l'échelle nanométrique par sonde locale de la fiabilité et de la dégradation de films minces d'oxyde pour applications MOS et MIM : Study of the reliability and degradation of ultra-thin oxide layers at nanometric scale by scanning probe microscopy for MOS and MIM applications. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2020 Jan 24]. Available from: http://www.theses.fr/2015GREAT047.

Council of Science Editors:

Foissac R. Etude à l'échelle nanométrique par sonde locale de la fiabilité et de la dégradation de films minces d'oxyde pour applications MOS et MIM : Study of the reliability and degradation of ultra-thin oxide layers at nanometric scale by scanning probe microscopy for MOS and MIM applications. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAT047


Université de Grenoble

16. Palma, Giorgio. Nouvelles Architectures Hybrides : Logique / Mémoires Non-Volatiles et technologies associées. : Novel Hybrid Logic / Non-Volatile memory Architectures and associated technologies.

Degree: Docteur es, Sciences et technologie industrielles, 2013, Université de Grenoble

Les nouvelles approches de technologies mémoires permettront une intégration dite back-end, où les cellules élémentaires de stockage seront fabriquées lors des dernières étapes de réalisation… (more)

Subjects/Keywords: Mémoires non-volatiles; Mémoires résistives; Logique reconfigurable; FPGA; CBRAM; Non-volatile memories; Resistive memories,; Reconfigurable logic; FPGA; CBRAM

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APA (6th Edition):

Palma, G. (2013). Nouvelles Architectures Hybrides : Logique / Mémoires Non-Volatiles et technologies associées. : Novel Hybrid Logic / Non-Volatile memory Architectures and associated technologies. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2013GRENT042

Chicago Manual of Style (16th Edition):

Palma, Giorgio. “Nouvelles Architectures Hybrides : Logique / Mémoires Non-Volatiles et technologies associées. : Novel Hybrid Logic / Non-Volatile memory Architectures and associated technologies.” 2013. Doctoral Dissertation, Université de Grenoble. Accessed January 24, 2020. http://www.theses.fr/2013GRENT042.

MLA Handbook (7th Edition):

Palma, Giorgio. “Nouvelles Architectures Hybrides : Logique / Mémoires Non-Volatiles et technologies associées. : Novel Hybrid Logic / Non-Volatile memory Architectures and associated technologies.” 2013. Web. 24 Jan 2020.

Vancouver:

Palma G. Nouvelles Architectures Hybrides : Logique / Mémoires Non-Volatiles et technologies associées. : Novel Hybrid Logic / Non-Volatile memory Architectures and associated technologies. [Internet] [Doctoral dissertation]. Université de Grenoble; 2013. [cited 2020 Jan 24]. Available from: http://www.theses.fr/2013GRENT042.

Council of Science Editors:

Palma G. Nouvelles Architectures Hybrides : Logique / Mémoires Non-Volatiles et technologies associées. : Novel Hybrid Logic / Non-Volatile memory Architectures and associated technologies. [Doctoral Dissertation]. Université de Grenoble; 2013. Available from: http://www.theses.fr/2013GRENT042

17. Shrestha, Pragya Rasmi. Fast Transients in Non-Volatile Resistive Memories (RRAM) Using Tantalum Pentoxide as Solid Electrolyte.

Degree: PhD, Electrical/Computer Engineering, 2013, Old Dominion University

  The semiconductor electronics industry has followed Moore's law austerely since 1965 fueling the microelectronics revolution and major technological advancements. Over the recent decades, the… (more)

Subjects/Keywords: Fast transients; Non-volatile resistive memories; Solid electrolyte; Tantalum pentoxide; Electrical and Computer Engineering

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APA (6th Edition):

Shrestha, P. R. (2013). Fast Transients in Non-Volatile Resistive Memories (RRAM) Using Tantalum Pentoxide as Solid Electrolyte. (Doctoral Dissertation). Old Dominion University. Retrieved from 9781303166259 ; https://digitalcommons.odu.edu/ece_etds/131

Chicago Manual of Style (16th Edition):

Shrestha, Pragya Rasmi. “Fast Transients in Non-Volatile Resistive Memories (RRAM) Using Tantalum Pentoxide as Solid Electrolyte.” 2013. Doctoral Dissertation, Old Dominion University. Accessed January 24, 2020. 9781303166259 ; https://digitalcommons.odu.edu/ece_etds/131.

MLA Handbook (7th Edition):

Shrestha, Pragya Rasmi. “Fast Transients in Non-Volatile Resistive Memories (RRAM) Using Tantalum Pentoxide as Solid Electrolyte.” 2013. Web. 24 Jan 2020.

Vancouver:

Shrestha PR. Fast Transients in Non-Volatile Resistive Memories (RRAM) Using Tantalum Pentoxide as Solid Electrolyte. [Internet] [Doctoral dissertation]. Old Dominion University; 2013. [cited 2020 Jan 24]. Available from: 9781303166259 ; https://digitalcommons.odu.edu/ece_etds/131.

Council of Science Editors:

Shrestha PR. Fast Transients in Non-Volatile Resistive Memories (RRAM) Using Tantalum Pentoxide as Solid Electrolyte. [Doctoral Dissertation]. Old Dominion University; 2013. Available from: 9781303166259 ; https://digitalcommons.odu.edu/ece_etds/131


NSYSU

18. Huang, Kuan-Chi. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.

Degree: Master, Physics, 2014, NSYSU

 In order to clarify the mechanism of reset process in Ti/HfO2/TiN resistive random access memory (RRAM) devices, constant voltage sampling measurements are carried out at… (more)

Subjects/Keywords: complementary resistive switches; indium tin oxide; activation energy; hafnium; resistive random access memory

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APA (6th Edition):

Huang, K. (2014). Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Thesis, NSYSU. Accessed January 24, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Web. 24 Jan 2020.

Vancouver:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Jan 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New South Wales

19. Younis, Adnan. Bottom up Approach: An Efficient Fabrication of CeO2 Thin Films for High Performance Resistive Random Access Memories.

Degree: Materials Science & Engineering, 2014, University of New South Wales

Resistive random access memories (RRAMs) based on metal oxide thin films have unique advantages over conventional non-volatile memories. In particular, RRAM exhibits two resistances states… (more)

Subjects/Keywords: Bottom up approaches; Cerium Oxide; Resistive switching; Nanostructures

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APA (6th Edition):

Younis, A. (2014). Bottom up Approach: An Efficient Fabrication of CeO2 Thin Films for High Performance Resistive Random Access Memories. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/54046 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12762/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Younis, Adnan. “Bottom up Approach: An Efficient Fabrication of CeO2 Thin Films for High Performance Resistive Random Access Memories.” 2014. Doctoral Dissertation, University of New South Wales. Accessed January 24, 2020. http://handle.unsw.edu.au/1959.4/54046 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12762/SOURCE02?view=true.

MLA Handbook (7th Edition):

Younis, Adnan. “Bottom up Approach: An Efficient Fabrication of CeO2 Thin Films for High Performance Resistive Random Access Memories.” 2014. Web. 24 Jan 2020.

Vancouver:

Younis A. Bottom up Approach: An Efficient Fabrication of CeO2 Thin Films for High Performance Resistive Random Access Memories. [Internet] [Doctoral dissertation]. University of New South Wales; 2014. [cited 2020 Jan 24]. Available from: http://handle.unsw.edu.au/1959.4/54046 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12762/SOURCE02?view=true.

Council of Science Editors:

Younis A. Bottom up Approach: An Efficient Fabrication of CeO2 Thin Films for High Performance Resistive Random Access Memories. [Doctoral Dissertation]. University of New South Wales; 2014. Available from: http://handle.unsw.edu.au/1959.4/54046 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12762/SOURCE02?view=true


University of New South Wales

20. Sullaphen, Jivika. Synthesis and resistive switching properties of nickel oxide nanostructures made via a phase separation approach.

Degree: Materials Science & Engineering, 2012, University of New South Wales

 This thesis investigates the synthesis and resistive switching properties of nickel oxide (NiO) nanostructures grown on strontium titanate, SrTiO3 and niobium doped SrTiO3 substrates of… (more)

Subjects/Keywords: resistive switching; nickel oxide; nanostructures; phase separation; synthesis

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APA (6th Edition):

Sullaphen, J. (2012). Synthesis and resistive switching properties of nickel oxide nanostructures made via a phase separation approach. (Masters Thesis). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/52005 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10675/SOURCE01?view=true

Chicago Manual of Style (16th Edition):

Sullaphen, Jivika. “Synthesis and resistive switching properties of nickel oxide nanostructures made via a phase separation approach.” 2012. Masters Thesis, University of New South Wales. Accessed January 24, 2020. http://handle.unsw.edu.au/1959.4/52005 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10675/SOURCE01?view=true.

MLA Handbook (7th Edition):

Sullaphen, Jivika. “Synthesis and resistive switching properties of nickel oxide nanostructures made via a phase separation approach.” 2012. Web. 24 Jan 2020.

Vancouver:

Sullaphen J. Synthesis and resistive switching properties of nickel oxide nanostructures made via a phase separation approach. [Internet] [Masters thesis]. University of New South Wales; 2012. [cited 2020 Jan 24]. Available from: http://handle.unsw.edu.au/1959.4/52005 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10675/SOURCE01?view=true.

Council of Science Editors:

Sullaphen J. Synthesis and resistive switching properties of nickel oxide nanostructures made via a phase separation approach. [Masters Thesis]. University of New South Wales; 2012. Available from: http://handle.unsw.edu.au/1959.4/52005 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10675/SOURCE01?view=true


University of New South Wales

21. Guan, Peiyuan. Development of Transparent and Flexible Resistive Switching Materials.

Degree: Materials Science & Engineering, 2018, University of New South Wales

 In conventional circuit boards, 77% of the weight is in the substrate. New electronics built on thin and flexible substrates will open up exciting possibilities… (more)

Subjects/Keywords: Perovskite oxide; Resistive switching; Silver nanowires; Fexible and transparent

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APA (6th Edition):

Guan, P. (2018). Development of Transparent and Flexible Resistive Switching Materials. (Masters Thesis). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/60275 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:51645/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Guan, Peiyuan. “Development of Transparent and Flexible Resistive Switching Materials.” 2018. Masters Thesis, University of New South Wales. Accessed January 24, 2020. http://handle.unsw.edu.au/1959.4/60275 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:51645/SOURCE02?view=true.

MLA Handbook (7th Edition):

Guan, Peiyuan. “Development of Transparent and Flexible Resistive Switching Materials.” 2018. Web. 24 Jan 2020.

Vancouver:

Guan P. Development of Transparent and Flexible Resistive Switching Materials. [Internet] [Masters thesis]. University of New South Wales; 2018. [cited 2020 Jan 24]. Available from: http://handle.unsw.edu.au/1959.4/60275 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:51645/SOURCE02?view=true.

Council of Science Editors:

Guan P. Development of Transparent and Flexible Resistive Switching Materials. [Masters Thesis]. University of New South Wales; 2018. Available from: http://handle.unsw.edu.au/1959.4/60275 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:51645/SOURCE02?view=true


NSYSU

22. Yang, Jyun-bao. The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory.

Degree: PhD, Electro-Optical Engineering, 2014, NSYSU

 Recently, with the advancement of portable electronic products, nonvolatile memories have attracted much attention. In order to increase the capacity and density of nonvolatile memory,… (more)

Subjects/Keywords: resistive random access memory; gallium oxide; indium oxide; amorphous indium-gallium-zinc-oxide thin film transistors; indium gallium oxide

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APA (6th Edition):

Yang, J. (2014). The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038

Chicago Manual of Style (16th Edition):

Yang, Jyun-bao. “The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory.” 2014. Doctoral Dissertation, NSYSU. Accessed January 24, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038.

MLA Handbook (7th Edition):

Yang, Jyun-bao. “The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory.” 2014. Web. 24 Jan 2020.

Vancouver:

Yang J. The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory. [Internet] [Doctoral dissertation]. NSYSU; 2014. [cited 2020 Jan 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038.

Council of Science Editors:

Yang J. The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory. [Doctoral Dissertation]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038


Université de Grenoble

23. Calka, Pauline. Nanocaractérisation d'oxydes à changement de résistance pour les mémoires résistives : Nanocharacterization of resistance switching oxides for resistive memories.

Degree: Docteur es, Génie civil, 2012, Université de Grenoble

En raison de leur faible consommation d'énergie, les mémoires non volatiles (MNV) sont En raison de leur faible consommation d'énergie, les mémoires non-volatiles sont particulièrement… (more)

Subjects/Keywords: Mémoires résistives; HfO2; NiO; Spectroscopie de pertes d'énergie; Spectroscopie de photoélectrons; Resistive memories; HfO2; NiO; Electron energy loss spectroscopy; Photoelectron spectroscopy

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APA (6th Edition):

Calka, P. (2012). Nanocaractérisation d'oxydes à changement de résistance pour les mémoires résistives : Nanocharacterization of resistance switching oxides for resistive memories. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2012GRENI023

Chicago Manual of Style (16th Edition):

Calka, Pauline. “Nanocaractérisation d'oxydes à changement de résistance pour les mémoires résistives : Nanocharacterization of resistance switching oxides for resistive memories.” 2012. Doctoral Dissertation, Université de Grenoble. Accessed January 24, 2020. http://www.theses.fr/2012GRENI023.

MLA Handbook (7th Edition):

Calka, Pauline. “Nanocaractérisation d'oxydes à changement de résistance pour les mémoires résistives : Nanocharacterization of resistance switching oxides for resistive memories.” 2012. Web. 24 Jan 2020.

Vancouver:

Calka P. Nanocaractérisation d'oxydes à changement de résistance pour les mémoires résistives : Nanocharacterization of resistance switching oxides for resistive memories. [Internet] [Doctoral dissertation]. Université de Grenoble; 2012. [cited 2020 Jan 24]. Available from: http://www.theses.fr/2012GRENI023.

Council of Science Editors:

Calka P. Nanocaractérisation d'oxydes à changement de résistance pour les mémoires résistives : Nanocharacterization of resistance switching oxides for resistive memories. [Doctoral Dissertation]. Université de Grenoble; 2012. Available from: http://www.theses.fr/2012GRENI023


Universidade do Rio Grande do Sul

24. Sulzbach, Milena Cervo. Síntese de memórias resistivas de TiO2 e caracterização por feixe de íons.

Degree: 2017, Universidade do Rio Grande do Sul

Neste trabalho foi desenvolvido um estudo sistemático dos mecanismos de difusão responsáveis pelo switching de resistência em memórias resistivas. Essas memórias possuem estrutura semelhante a… (more)

Subjects/Keywords: Resistive memories; Dióxido de titânio; Retroespalhamento rutherford; Conducting filaments; Feixes de íons; Diffusion mechanisms; TiO2; Ion beam analyses

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APA (6th Edition):

Sulzbach, M. C. (2017). Síntese de memórias resistivas de TiO2 e caracterização por feixe de íons. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/163763

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sulzbach, Milena Cervo. “Síntese de memórias resistivas de TiO2 e caracterização por feixe de íons.” 2017. Thesis, Universidade do Rio Grande do Sul. Accessed January 24, 2020. http://hdl.handle.net/10183/163763.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sulzbach, Milena Cervo. “Síntese de memórias resistivas de TiO2 e caracterização por feixe de íons.” 2017. Web. 24 Jan 2020.

Vancouver:

Sulzbach MC. Síntese de memórias resistivas de TiO2 e caracterização por feixe de íons. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2017. [cited 2020 Jan 24]. Available from: http://hdl.handle.net/10183/163763.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sulzbach MC. Síntese de memórias resistivas de TiO2 e caracterização por feixe de íons. [Thesis]. Universidade do Rio Grande do Sul; 2017. Available from: http://hdl.handle.net/10183/163763

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

25. Mraihi, Salmen. Prise en compte de la variabilité dans l’étude et la conception de circuits de lecture pour mémoires résistives : Design for variability of read circuitries for resistive memories.

Degree: Docteur es, Electronique et Optoélectronique, Nano- et Microtechnologies, 2018, Paris Saclay

De nos jours, la conception des systèmes sur puce devient de plus en plus complexe, et requiert des densités de mémoire sans cesse grandissantes. Pour… (more)

Subjects/Keywords: Mémoires résistives; Conception de circuits analogiques; Amplificateurs de lecture; Variabilité; Offset; Resistive memories; Design of analog circuits; Sense amplifiers; Variability; Offset

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APA (6th Edition):

Mraihi, S. (2018). Prise en compte de la variabilité dans l’étude et la conception de circuits de lecture pour mémoires résistives : Design for variability of read circuitries for resistive memories. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2018SACLS218

Chicago Manual of Style (16th Edition):

Mraihi, Salmen. “Prise en compte de la variabilité dans l’étude et la conception de circuits de lecture pour mémoires résistives : Design for variability of read circuitries for resistive memories.” 2018. Doctoral Dissertation, Paris Saclay. Accessed January 24, 2020. http://www.theses.fr/2018SACLS218.

MLA Handbook (7th Edition):

Mraihi, Salmen. “Prise en compte de la variabilité dans l’étude et la conception de circuits de lecture pour mémoires résistives : Design for variability of read circuitries for resistive memories.” 2018. Web. 24 Jan 2020.

Vancouver:

Mraihi S. Prise en compte de la variabilité dans l’étude et la conception de circuits de lecture pour mémoires résistives : Design for variability of read circuitries for resistive memories. [Internet] [Doctoral dissertation]. Paris Saclay; 2018. [cited 2020 Jan 24]. Available from: http://www.theses.fr/2018SACLS218.

Council of Science Editors:

Mraihi S. Prise en compte de la variabilité dans l’étude et la conception de circuits de lecture pour mémoires résistives : Design for variability of read circuitries for resistive memories. [Doctoral Dissertation]. Paris Saclay; 2018. Available from: http://www.theses.fr/2018SACLS218


Univerzitet u Beogradu

26. Knežević, Ivan, 1984-. Radijaciona otpornost rezistivnih postojanih memorija.

Degree: Elektrotehnički fakultet, 2016, Univerzitet u Beogradu

Fizička elektronika i nuklearna tehnika - Efekti zračenja u materijalima i elektronskim komponentama / Physical Electronics and Nuclear Engineering - Radiation Effects in Materials and… (more)

Subjects/Keywords: radiation; ionizing radiation; ion beam; interaction of radiation with matter; transport of ions in matter; nonvolatile memories; resistive random access memories; Monte Carlo simulation

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APA (6th Edition):

Knežević, Ivan, 1. (2016). Radijaciona otpornost rezistivnih postojanih memorija. (Thesis). Univerzitet u Beogradu. Retrieved from https://fedorabg.bg.ac.rs/fedora/get/o:11703/bdef:Content/get

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Knežević, Ivan, 1984-. “Radijaciona otpornost rezistivnih postojanih memorija.” 2016. Thesis, Univerzitet u Beogradu. Accessed January 24, 2020. https://fedorabg.bg.ac.rs/fedora/get/o:11703/bdef:Content/get.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Knežević, Ivan, 1984-. “Radijaciona otpornost rezistivnih postojanih memorija.” 2016. Web. 24 Jan 2020.

Vancouver:

Knežević, Ivan 1. Radijaciona otpornost rezistivnih postojanih memorija. [Internet] [Thesis]. Univerzitet u Beogradu; 2016. [cited 2020 Jan 24]. Available from: https://fedorabg.bg.ac.rs/fedora/get/o:11703/bdef:Content/get.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Knežević, Ivan 1. Radijaciona otpornost rezistivnih postojanih memorija. [Thesis]. Univerzitet u Beogradu; 2016. Available from: https://fedorabg.bg.ac.rs/fedora/get/o:11703/bdef:Content/get

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

27. Wakrim, Tariq. Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors) : Capacitance switching in resistive memories (ReRAM), application to impedance memories (ZRAM or mem-capacitors).

Degree: Docteur es, Nano electronique et nano technologies, 2018, Grenoble Alpes

Les mémoires résistives ReRAM (ou memristors) sont destinées à remplacer les mémoires non volatiles Flash. Les ReRAM utilisent le changement de résistance d’une structure MIM… (more)

Subjects/Keywords: Mémoires résistives ReRAM; Commutation de capacitance; Mem-Capacitors; Mémoires d’impédance; Structures MIM; Stress en tension; Resistive memories ReRAM; Capacitance switching; Mem-Capacitors; Impedance memories; MIM structures; Voltage stress; 620

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APA (6th Edition):

Wakrim, T. (2018). Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors) : Capacitance switching in resistive memories (ReRAM), application to impedance memories (ZRAM or mem-capacitors). (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAT085

Chicago Manual of Style (16th Edition):

Wakrim, Tariq. “Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors) : Capacitance switching in resistive memories (ReRAM), application to impedance memories (ZRAM or mem-capacitors).” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed January 24, 2020. http://www.theses.fr/2018GREAT085.

MLA Handbook (7th Edition):

Wakrim, Tariq. “Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors) : Capacitance switching in resistive memories (ReRAM), application to impedance memories (ZRAM or mem-capacitors).” 2018. Web. 24 Jan 2020.

Vancouver:

Wakrim T. Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors) : Capacitance switching in resistive memories (ReRAM), application to impedance memories (ZRAM or mem-capacitors). [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2020 Jan 24]. Available from: http://www.theses.fr/2018GREAT085.

Council of Science Editors:

Wakrim T. Commutation de capacitance dans les mémoires résistives (ReRAM), application aux mémoires d’impédance (ZRAM ou mem-capacitors) : Capacitance switching in resistive memories (ReRAM), application to impedance memories (ZRAM or mem-capacitors). [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAT085


NSYSU

28. Chen, Po-Hsun. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.

Degree: PhD, Physics, 2018, NSYSU

 With the advent of advanced technologies such as the Internet of Things (IoT), artificial intelligence (AI), and cloud computing, huge amounts of data are continuously… (more)

Subjects/Keywords: Resistance Switching (RS); Indium Tin Oxide (ITO); Resistive Random Access Memory (RRAM); Hafnium Dioxide (HfO2)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, P. (2018). Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038

Chicago Manual of Style (16th Edition):

Chen, Po-Hsun. “Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.” 2018. Doctoral Dissertation, NSYSU. Accessed January 24, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038.

MLA Handbook (7th Edition):

Chen, Po-Hsun. “Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.” 2018. Web. 24 Jan 2020.

Vancouver:

Chen P. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. [Internet] [Doctoral dissertation]. NSYSU; 2018. [cited 2020 Jan 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038.

Council of Science Editors:

Chen P. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. [Doctoral Dissertation]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038


NSYSU

29. Chen, Min-Chen. Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices.

Degree: PhD, Physics, 2011, NSYSU

 In first part, the supercritical CO2 (SCCO2) fluid technology is employed to improve the device properties of ZnO TFT. The SCCO2 fluid exhibits liquid-like property,… (more)

Subjects/Keywords: Thin-Film Transistors (TFTs); Oxide thin film; Resistive Random Access Memory (RRAM)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, M. (2011). Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714111-132055

Chicago Manual of Style (16th Edition):

Chen, Min-Chen. “Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices.” 2011. Doctoral Dissertation, NSYSU. Accessed January 24, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714111-132055.

MLA Handbook (7th Edition):

Chen, Min-Chen. “Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices.” 2011. Web. 24 Jan 2020.

Vancouver:

Chen M. Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices. [Internet] [Doctoral dissertation]. NSYSU; 2011. [cited 2020 Jan 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714111-132055.

Council of Science Editors:

Chen M. Study on the Fabrication and Electrical Characteristics of the Advanced Metal-oxide-based Resistive Random Access Memory and Thin-Film Transistors Devices. [Doctoral Dissertation]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714111-132055


University of Michigan

30. Choi, Shinhyun. Characteristics and Applications of Non-Volatile Resistive Switching (Memristor) Device.

Degree: PhD, Electrical Engineering, 2015, University of Michigan

 Non-volatile memory technology scaling has been driven by the ever increasing needs of high-capacity and low-cost data storage. Scaling the conventional floating gate device structure,… (more)

Subjects/Keywords: Resistive Switching; Memristor; metal oxide; Ta; valence change memory; non-volatile; Electrical Engineering; Engineering

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APA (6th Edition):

Choi, S. (2015). Characteristics and Applications of Non-Volatile Resistive Switching (Memristor) Device. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/113635

Chicago Manual of Style (16th Edition):

Choi, Shinhyun. “Characteristics and Applications of Non-Volatile Resistive Switching (Memristor) Device.” 2015. Doctoral Dissertation, University of Michigan. Accessed January 24, 2020. http://hdl.handle.net/2027.42/113635.

MLA Handbook (7th Edition):

Choi, Shinhyun. “Characteristics and Applications of Non-Volatile Resistive Switching (Memristor) Device.” 2015. Web. 24 Jan 2020.

Vancouver:

Choi S. Characteristics and Applications of Non-Volatile Resistive Switching (Memristor) Device. [Internet] [Doctoral dissertation]. University of Michigan; 2015. [cited 2020 Jan 24]. Available from: http://hdl.handle.net/2027.42/113635.

Council of Science Editors:

Choi S. Characteristics and Applications of Non-Volatile Resistive Switching (Memristor) Device. [Doctoral Dissertation]. University of Michigan; 2015. Available from: http://hdl.handle.net/2027.42/113635

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