Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for subject:(Novel dielectric materials). Showing records 1 – 2 of 2 total matches.

Search Limiters

Last 2 Years | English Only

No search limiters apply to these results.

▼ Search Limiters

1. KOH BIH HIAN. Modeling and characterization of high dielectric constant tunnel barriers for nanoelectronic applications.

Degree: 2005, National University of Singapore

Subjects/Keywords: Germanium nanocrystal; Flash memory; Nonvolatile memory; High-k dielectric materials; Quantum mechanical modeling; Novel tunnel barriers

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

HIAN, K. B. (2005). Modeling and characterization of high dielectric constant tunnel barriers for nanoelectronic applications. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/15008

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

HIAN, KOH BIH. “Modeling and characterization of high dielectric constant tunnel barriers for nanoelectronic applications.” 2005. Thesis, National University of Singapore. Accessed March 28, 2020. http://scholarbank.nus.edu.sg/handle/10635/15008.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

HIAN, KOH BIH. “Modeling and characterization of high dielectric constant tunnel barriers for nanoelectronic applications.” 2005. Web. 28 Mar 2020.

Vancouver:

HIAN KB. Modeling and characterization of high dielectric constant tunnel barriers for nanoelectronic applications. [Internet] [Thesis]. National University of Singapore; 2005. [cited 2020 Mar 28]. Available from: http://scholarbank.nus.edu.sg/handle/10635/15008.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

HIAN KB. Modeling and characterization of high dielectric constant tunnel barriers for nanoelectronic applications. [Thesis]. National University of Singapore; 2005. Available from: http://scholarbank.nus.edu.sg/handle/10635/15008

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

2. Wang, Guoan. RF MEMS Switches with Novel Materials and Micromachining Techniques for SOC/SOP RF Front Ends.

Degree: PhD, Electrical and Computer Engineering, 2006, Georgia Tech

This dissertation deals with the development of RF MEMS switches with novel materials and micromachining techniques for the RF and microwave applications. To enable the integration of RF and microwave components on CMOS grade silicon, finite ground coplanar waveguide transmission line on CMOS grade silicon wafer were first studied using micromachining techniques. In addition, several RF MEMS capacitive switches were developed with novel materials. A novel approach for fabricating low cost capacitive RF MEMS switches using directly photo-definable high dielectric constant metal oxides was developed, these switches exhibited significantly higher isolation and load capacitances as compared to comparable switches fabricated using a simple silicon nitride dielectric. The second RF MEMS switch developed is on a low cost, flexible liquid crystal polymer (LCP) substrate. Its very low water absorption (0.04%), low dielectric loss and multi-layer circuit capability make it very appealing for RF Systems-On-a-Package (SOP). Also, a tunable RF MEMS switch on a sapphire substrate with BST as dielectric material was developed, the BST has a very high dielectric constant (>300) making it very appealing for RF MEMS capacitive switches. The tunable dielectric constant of BST provides a possibility of making linearly tunable MEMS capacitor-switches. For the first time a capacitive tunable RF MEMS switch with a BST dielectric and its characterization and properties up to 40 GHz was presented. Dielectric charging is the main reliability issue for MEMS switch, temperature study of dielectric polarization effect of RF MEMS was investigated in this dissertation. Finally, integration of two reconfigurable RF circuits with RF MEMS switches were discussed, the first one is a reconfigurable dual frequency (14GHz and 35 GHz) antenna with double polarization using RF MEMS switches on a multi-layer LCP substrate; and the second one is a center frequency and bandwidth tunable filter with BST capacitors and RF MEMS switches on sapphire substrate. Advisors/Committee Members: John Papapolymerou (Committee Chair), Cliff Henderson (Committee Member), John Cressler (Committee Member), Joy Laskar (Committee Member), Shyh-Chiang Shen (Committee Member).

Subjects/Keywords: CMOS grade Silicon; Micromachining techniques; LCP; BST; Photodefinable; Novel dielectric materials; RF MEMS switch; SOC/SOP; Micromachining; Microwave devices; Dielectrics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, G. (2006). RF MEMS Switches with Novel Materials and Micromachining Techniques for SOC/SOP RF Front Ends. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/14112

Chicago Manual of Style (16th Edition):

Wang, Guoan. “RF MEMS Switches with Novel Materials and Micromachining Techniques for SOC/SOP RF Front Ends.” 2006. Doctoral Dissertation, Georgia Tech. Accessed March 28, 2020. http://hdl.handle.net/1853/14112.

MLA Handbook (7th Edition):

Wang, Guoan. “RF MEMS Switches with Novel Materials and Micromachining Techniques for SOC/SOP RF Front Ends.” 2006. Web. 28 Mar 2020.

Vancouver:

Wang G. RF MEMS Switches with Novel Materials and Micromachining Techniques for SOC/SOP RF Front Ends. [Internet] [Doctoral dissertation]. Georgia Tech; 2006. [cited 2020 Mar 28]. Available from: http://hdl.handle.net/1853/14112.

Council of Science Editors:

Wang G. RF MEMS Switches with Novel Materials and Micromachining Techniques for SOC/SOP RF Front Ends. [Doctoral Dissertation]. Georgia Tech; 2006. Available from: http://hdl.handle.net/1853/14112

.