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You searched for subject:(Nitrides). Showing records 1 – 30 of 294 total matches.

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University of Notre Dame

1. Satyaki Ganguly. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.

Degree: Electrical Engineering, 2014, University of Notre Dame

  Owing to the large band gap (EgGaN=3.4eV) and high electron saturation velocity, GaN based high electron mobility transistors (HEMTs) are attractive for high voltage… (more)

Subjects/Keywords: III-Nitrides; MBE

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APA (6th Edition):

Ganguly, S. (2014). High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/0c483j34v8f

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ganguly, Satyaki. “High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.” 2014. Thesis, University of Notre Dame. Accessed March 06, 2021. https://curate.nd.edu/show/0c483j34v8f.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ganguly, Satyaki. “High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.” 2014. Web. 06 Mar 2021.

Vancouver:

Ganguly S. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. [Internet] [Thesis]. University of Notre Dame; 2014. [cited 2021 Mar 06]. Available from: https://curate.nd.edu/show/0c483j34v8f.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ganguly S. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. [Thesis]. University of Notre Dame; 2014. Available from: https://curate.nd.edu/show/0c483j34v8f

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Latrobe University

2. Hashim, Hashimah. The growth and characterisation of the dilute nitride InGaAsN.

Degree: PhD, 2012, Latrobe University

Thesis (Ph.D.) - La Trobe University, 2012

Submission note: "A thesis submitted in total fulfilment of the requirements for the degree of Doctor of Philosophy… (more)

Subjects/Keywords: Nitrides.; Semiconductors  – Materials.

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APA (6th Edition):

Hashim, H. (2012). The growth and characterisation of the dilute nitride InGaAsN. (Doctoral Dissertation). Latrobe University. Retrieved from http://hdl.handle.net/1959.9/522346

Chicago Manual of Style (16th Edition):

Hashim, Hashimah. “The growth and characterisation of the dilute nitride InGaAsN.” 2012. Doctoral Dissertation, Latrobe University. Accessed March 06, 2021. http://hdl.handle.net/1959.9/522346.

MLA Handbook (7th Edition):

Hashim, Hashimah. “The growth and characterisation of the dilute nitride InGaAsN.” 2012. Web. 06 Mar 2021.

Vancouver:

Hashim H. The growth and characterisation of the dilute nitride InGaAsN. [Internet] [Doctoral dissertation]. Latrobe University; 2012. [cited 2021 Mar 06]. Available from: http://hdl.handle.net/1959.9/522346.

Council of Science Editors:

Hashim H. The growth and characterisation of the dilute nitride InGaAsN. [Doctoral Dissertation]. Latrobe University; 2012. Available from: http://hdl.handle.net/1959.9/522346


University of Notre Dame

3. Yan He. The Effect of N-Type Doping on the Optical Spectra of Dilute Nitrides: Possible Applications</h1>.

Degree: Electrical Engineering, 2011, University of Notre Dame

  This dissertation investigates the effect of n-type doping on the optical spectra of the dilute nitride GaAsN alloy system. Using conventional and high spatial… (more)

Subjects/Keywords: dilute nitrides

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APA (6th Edition):

He, Y. (2011). The Effect of N-Type Doping on the Optical Spectra of Dilute Nitrides: Possible Applications</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/sj13902281t

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

He, Yan. “The Effect of N-Type Doping on the Optical Spectra of Dilute Nitrides: Possible Applications</h1>.” 2011. Thesis, University of Notre Dame. Accessed March 06, 2021. https://curate.nd.edu/show/sj13902281t.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

He, Yan. “The Effect of N-Type Doping on the Optical Spectra of Dilute Nitrides: Possible Applications</h1>.” 2011. Web. 06 Mar 2021.

Vancouver:

He Y. The Effect of N-Type Doping on the Optical Spectra of Dilute Nitrides: Possible Applications</h1>. [Internet] [Thesis]. University of Notre Dame; 2011. [cited 2021 Mar 06]. Available from: https://curate.nd.edu/show/sj13902281t.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

He Y. The Effect of N-Type Doping on the Optical Spectra of Dilute Nitrides: Possible Applications</h1>. [Thesis]. University of Notre Dame; 2011. Available from: https://curate.nd.edu/show/sj13902281t

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Mitra, Chandrima. COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GAN.

Degree: PhD, Physics, 2009, Case Western Reserve University School of Graduate Studies

  The thesis presented here deals electronic and magnetic properties of Gd doped GaN and Gadolinium pnictides. GdN is a ferromagnetic semiconductor while the other… (more)

Subjects/Keywords: magnetism; nitrides

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APA (6th Edition):

Mitra, C. (2009). COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GAN. (Doctoral Dissertation). Case Western Reserve University School of Graduate Studies. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=case1238690053

Chicago Manual of Style (16th Edition):

Mitra, Chandrima. “COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GAN.” 2009. Doctoral Dissertation, Case Western Reserve University School of Graduate Studies. Accessed March 06, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=case1238690053.

MLA Handbook (7th Edition):

Mitra, Chandrima. “COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GAN.” 2009. Web. 06 Mar 2021.

Vancouver:

Mitra C. COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GAN. [Internet] [Doctoral dissertation]. Case Western Reserve University School of Graduate Studies; 2009. [cited 2021 Mar 06]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=case1238690053.

Council of Science Editors:

Mitra C. COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GAN. [Doctoral Dissertation]. Case Western Reserve University School of Graduate Studies; 2009. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=case1238690053


University of Hong Kong

5. So, Wai-kei. A study of surface properties of III-nitride semiconductors by first principles total energy calculation.

Degree: 2006, University of Hong Kong

Subjects/Keywords: Nitrides.; Semiconductors - Surfaces.

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APA (6th Edition):

So, W. (2006). A study of surface properties of III-nitride semiconductors by first principles total energy calculation. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/52376

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

So, Wai-kei. “A study of surface properties of III-nitride semiconductors by first principles total energy calculation.” 2006. Thesis, University of Hong Kong. Accessed March 06, 2021. http://hdl.handle.net/10722/52376.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

So, Wai-kei. “A study of surface properties of III-nitride semiconductors by first principles total energy calculation.” 2006. Web. 06 Mar 2021.

Vancouver:

So W. A study of surface properties of III-nitride semiconductors by first principles total energy calculation. [Internet] [Thesis]. University of Hong Kong; 2006. [cited 2021 Mar 06]. Available from: http://hdl.handle.net/10722/52376.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

So W. A study of surface properties of III-nitride semiconductors by first principles total energy calculation. [Thesis]. University of Hong Kong; 2006. Available from: http://hdl.handle.net/10722/52376

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

6. Robbins, Spencer. Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides.

Degree: PhD, Chemistry and Chemical Biology, 2015, Cornell University

 Controlling the structure of inorganic materials on the mesoscale (2-50 nm) is desirable for many applications and can influence the materials' properties and performance in… (more)

Subjects/Keywords: block copolymers; mesoporous materials; metal nitrides

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APA (6th Edition):

Robbins, S. (2015). Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides. (Doctoral Dissertation). Cornell University. Retrieved from http://hdl.handle.net/1813/39425

Chicago Manual of Style (16th Edition):

Robbins, Spencer. “Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides.” 2015. Doctoral Dissertation, Cornell University. Accessed March 06, 2021. http://hdl.handle.net/1813/39425.

MLA Handbook (7th Edition):

Robbins, Spencer. “Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides.” 2015. Web. 06 Mar 2021.

Vancouver:

Robbins S. Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides. [Internet] [Doctoral dissertation]. Cornell University; 2015. [cited 2021 Mar 06]. Available from: http://hdl.handle.net/1813/39425.

Council of Science Editors:

Robbins S. Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides. [Doctoral Dissertation]. Cornell University; 2015. Available from: http://hdl.handle.net/1813/39425

7. Christian, George. Photoluminescence Studies of InGaN/GaN Quantum Well Structures.

Degree: 2018, University of Manchester

 In this thesis, optical studies of c-plane InGaN/GaN quantum well (QW) structures are presented. The effects of a Si-doped underlayer (UL) on the optical properties… (more)

Subjects/Keywords: photoluminescence; gallium nitride; nitrides; quantum well; semiconductor

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APA (6th Edition):

Christian, G. (2018). Photoluminescence Studies of InGaN/GaN Quantum Well Structures. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549

Chicago Manual of Style (16th Edition):

Christian, George. “Photoluminescence Studies of InGaN/GaN Quantum Well Structures.” 2018. Doctoral Dissertation, University of Manchester. Accessed March 06, 2021. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549.

MLA Handbook (7th Edition):

Christian, George. “Photoluminescence Studies of InGaN/GaN Quantum Well Structures.” 2018. Web. 06 Mar 2021.

Vancouver:

Christian G. Photoluminescence Studies of InGaN/GaN Quantum Well Structures. [Internet] [Doctoral dissertation]. University of Manchester; 2018. [cited 2021 Mar 06]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549.

Council of Science Editors:

Christian G. Photoluminescence Studies of InGaN/GaN Quantum Well Structures. [Doctoral Dissertation]. University of Manchester; 2018. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549

8. Kaun, Stephen William. Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy.

Degree: 2014, University of California – eScholarship, University of California

 GaN-based high-electron-mobility transistors (HEMTs) will play an important role in the next generation of high-frequency amplifiers and power-switching devices. Since parasitic conduction (leakage) through the… (more)

Subjects/Keywords: Materials Science; Epitaxy; III-nitrides; Transistors

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APA (6th Edition):

Kaun, S. W. (2014). Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/618910sq

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kaun, Stephen William. “Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy.” 2014. Thesis, University of California – eScholarship, University of California. Accessed March 06, 2021. http://www.escholarship.org/uc/item/618910sq.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kaun, Stephen William. “Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy.” 2014. Web. 06 Mar 2021.

Vancouver:

Kaun SW. Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy. [Internet] [Thesis]. University of California – eScholarship, University of California; 2014. [cited 2021 Mar 06]. Available from: http://www.escholarship.org/uc/item/618910sq.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kaun SW. Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy. [Thesis]. University of California – eScholarship, University of California; 2014. Available from: http://www.escholarship.org/uc/item/618910sq

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University College Cork

9. Smith, Matthew D. Development of InAlN HEMTs for space application.

Degree: 2016, University College Cork

 This thesis investigates the emerging InAlN high electron mobility transistor (HEMT) technology with respect to its application in the space industry. The manufacturing processes and… (more)

Subjects/Keywords: Transistors; Space; Nitrides; Reliability; Semiconductors; Radiation; Electronics

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APA (6th Edition):

Smith, M. D. (2016). Development of InAlN HEMTs for space application. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/2257

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Smith, Matthew D. “Development of InAlN HEMTs for space application.” 2016. Thesis, University College Cork. Accessed March 06, 2021. http://hdl.handle.net/10468/2257.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Smith, Matthew D. “Development of InAlN HEMTs for space application.” 2016. Web. 06 Mar 2021.

Vancouver:

Smith MD. Development of InAlN HEMTs for space application. [Internet] [Thesis]. University College Cork; 2016. [cited 2021 Mar 06]. Available from: http://hdl.handle.net/10468/2257.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Smith MD. Development of InAlN HEMTs for space application. [Thesis]. University College Cork; 2016. Available from: http://hdl.handle.net/10468/2257

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Victoria University of Wellington

10. Pitman, Kira. Development of a spin-injection device utilising Gadolinium Nitride.

Degree: 2020, Victoria University of Wellington

 In this thesis, the first steps in creating a realisable spin-injection transistor using ferromagnetic semiconductor electrodes are detailed. A spin-injection device utilising the ferromagnetic semiconductor… (more)

Subjects/Keywords: spintronics; rare-earth nitrides; spin transistor

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APA (6th Edition):

Pitman, K. (2020). Development of a spin-injection device utilising Gadolinium Nitride. (Masters Thesis). Victoria University of Wellington. Retrieved from http://hdl.handle.net/10063/9344

Chicago Manual of Style (16th Edition):

Pitman, Kira. “Development of a spin-injection device utilising Gadolinium Nitride.” 2020. Masters Thesis, Victoria University of Wellington. Accessed March 06, 2021. http://hdl.handle.net/10063/9344.

MLA Handbook (7th Edition):

Pitman, Kira. “Development of a spin-injection device utilising Gadolinium Nitride.” 2020. Web. 06 Mar 2021.

Vancouver:

Pitman K. Development of a spin-injection device utilising Gadolinium Nitride. [Internet] [Masters thesis]. Victoria University of Wellington; 2020. [cited 2021 Mar 06]. Available from: http://hdl.handle.net/10063/9344.

Council of Science Editors:

Pitman K. Development of a spin-injection device utilising Gadolinium Nitride. [Masters Thesis]. Victoria University of Wellington; 2020. Available from: http://hdl.handle.net/10063/9344


University of Hong Kong

11. Jiang, He. Laser spectroscopy of transition metal nitrides.

Degree: 1999, University of Hong Kong

Subjects/Keywords: Nitrides.; Laser spectroscopy

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APA (6th Edition):

Jiang, H. (1999). Laser spectroscopy of transition metal nitrides. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/35299

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jiang, He. “Laser spectroscopy of transition metal nitrides.” 1999. Thesis, University of Hong Kong. Accessed March 06, 2021. http://hdl.handle.net/10722/35299.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jiang, He. “Laser spectroscopy of transition metal nitrides.” 1999. Web. 06 Mar 2021.

Vancouver:

Jiang H. Laser spectroscopy of transition metal nitrides. [Internet] [Thesis]. University of Hong Kong; 1999. [cited 2021 Mar 06]. Available from: http://hdl.handle.net/10722/35299.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jiang H. Laser spectroscopy of transition metal nitrides. [Thesis]. University of Hong Kong; 1999. Available from: http://hdl.handle.net/10722/35299

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Michigan State University

12. Chen, Xianzhong. Exploratory synthesis of transition metal binary, ternary, and quaternary nitrides.

Degree: PhD, Department of Chemistry, 1996, Michigan State University

Subjects/Keywords: Transition metal nitrides

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APA (6th Edition):

Chen, X. (1996). Exploratory synthesis of transition metal binary, ternary, and quaternary nitrides. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:29986

Chicago Manual of Style (16th Edition):

Chen, Xianzhong. “Exploratory synthesis of transition metal binary, ternary, and quaternary nitrides.” 1996. Doctoral Dissertation, Michigan State University. Accessed March 06, 2021. http://etd.lib.msu.edu/islandora/object/etd:29986.

MLA Handbook (7th Edition):

Chen, Xianzhong. “Exploratory synthesis of transition metal binary, ternary, and quaternary nitrides.” 1996. Web. 06 Mar 2021.

Vancouver:

Chen X. Exploratory synthesis of transition metal binary, ternary, and quaternary nitrides. [Internet] [Doctoral dissertation]. Michigan State University; 1996. [cited 2021 Mar 06]. Available from: http://etd.lib.msu.edu/islandora/object/etd:29986.

Council of Science Editors:

Chen X. Exploratory synthesis of transition metal binary, ternary, and quaternary nitrides. [Doctoral Dissertation]. Michigan State University; 1996. Available from: http://etd.lib.msu.edu/islandora/object/etd:29986


The Ohio State University

13. Jessen, Gregg Huascar. Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performance.

Degree: PhD, Graduate School, 2002, The Ohio State University

Subjects/Keywords: Engineering; Semiconductors; Nitrides

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APA (6th Edition):

Jessen, G. H. (2002). Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performance. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1486463803603331

Chicago Manual of Style (16th Edition):

Jessen, Gregg Huascar. “Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performance.” 2002. Doctoral Dissertation, The Ohio State University. Accessed March 06, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486463803603331.

MLA Handbook (7th Edition):

Jessen, Gregg Huascar. “Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performance.” 2002. Web. 06 Mar 2021.

Vancouver:

Jessen GH. Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performance. [Internet] [Doctoral dissertation]. The Ohio State University; 2002. [cited 2021 Mar 06]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486463803603331.

Council of Science Editors:

Jessen GH. Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performance. [Doctoral Dissertation]. The Ohio State University; 2002. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486463803603331


Colorado School of Mines

14. Talley, Kevin R. Understanding piezoelectric nitrides by combinatorial methods.

Degree: PhD, Metallurgical and Materials Engineering, 2019, Colorado School of Mines

 Piezoelectric nitrides are technologically relevant materials, crucial for connecting today's cellular networks and positioned to enable the advanced communication networks of the future. However, new… (more)

Subjects/Keywords: nitrides; sputtering; combinatorial; thin films; piezoelectrics

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APA (6th Edition):

Talley, K. R. (2019). Understanding piezoelectric nitrides by combinatorial methods. (Doctoral Dissertation). Colorado School of Mines. Retrieved from http://hdl.handle.net/11124/173986

Chicago Manual of Style (16th Edition):

Talley, Kevin R. “Understanding piezoelectric nitrides by combinatorial methods.” 2019. Doctoral Dissertation, Colorado School of Mines. Accessed March 06, 2021. http://hdl.handle.net/11124/173986.

MLA Handbook (7th Edition):

Talley, Kevin R. “Understanding piezoelectric nitrides by combinatorial methods.” 2019. Web. 06 Mar 2021.

Vancouver:

Talley KR. Understanding piezoelectric nitrides by combinatorial methods. [Internet] [Doctoral dissertation]. Colorado School of Mines; 2019. [cited 2021 Mar 06]. Available from: http://hdl.handle.net/11124/173986.

Council of Science Editors:

Talley KR. Understanding piezoelectric nitrides by combinatorial methods. [Doctoral Dissertation]. Colorado School of Mines; 2019. Available from: http://hdl.handle.net/11124/173986


King Abdullah University of Science and Technology

15. Mumthaz Muhammed, Mufasila. Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides.

Degree: Physical Science and Engineering (PSE) Division, 2018, King Abdullah University of Science and Technology

 III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of… (more)

Subjects/Keywords: III-Nitrides; spectroscopy; Photoluminescence; TRPL; Electroluminescence; TEM

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APA (6th Edition):

Mumthaz Muhammed, M. (2018). Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides. (Thesis). King Abdullah University of Science and Technology. Retrieved from http://hdl.handle.net/10754/627382

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mumthaz Muhammed, Mufasila. “Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides.” 2018. Thesis, King Abdullah University of Science and Technology. Accessed March 06, 2021. http://hdl.handle.net/10754/627382.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mumthaz Muhammed, Mufasila. “Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides.” 2018. Web. 06 Mar 2021.

Vancouver:

Mumthaz Muhammed M. Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides. [Internet] [Thesis]. King Abdullah University of Science and Technology; 2018. [cited 2021 Mar 06]. Available from: http://hdl.handle.net/10754/627382.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mumthaz Muhammed M. Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides. [Thesis]. King Abdullah University of Science and Technology; 2018. Available from: http://hdl.handle.net/10754/627382

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


RMIT University

16. Hubbard, P. Characterisation of a commercial active screen plasma nitriding system.

Degree: 2007, RMIT University

 Nitriding is a plasma based processing technique that is used to improve the surface properties of components and products in many areas including the aerospace,… (more)

Subjects/Keywords: Fields of Research; Nitrides

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hubbard, P. (2007). Characterisation of a commercial active screen plasma nitriding system. (Thesis). RMIT University. Retrieved from http://researchbank.rmit.edu.au/view/rmit:6699

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hubbard, P. “Characterisation of a commercial active screen plasma nitriding system.” 2007. Thesis, RMIT University. Accessed March 06, 2021. http://researchbank.rmit.edu.au/view/rmit:6699.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hubbard, P. “Characterisation of a commercial active screen plasma nitriding system.” 2007. Web. 06 Mar 2021.

Vancouver:

Hubbard P. Characterisation of a commercial active screen plasma nitriding system. [Internet] [Thesis]. RMIT University; 2007. [cited 2021 Mar 06]. Available from: http://researchbank.rmit.edu.au/view/rmit:6699.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hubbard P. Characterisation of a commercial active screen plasma nitriding system. [Thesis]. RMIT University; 2007. Available from: http://researchbank.rmit.edu.au/view/rmit:6699

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

17. CHENG, YU-JUNG. Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations.

Degree: Master, Physics, 2016, NSYSU

 In this research, we grow m-plane gallium nitride on sapphire substrate using molecular beam epitaxy system, then using metal-organic chemical vapor deposition (MOCVD) to grow… (more)

Subjects/Keywords: III-V Nitrides; Molecular Beam Epitaxy (MBE); Nonpolar; Manganese; Raman spectroscopy

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APA (6th Edition):

CHENG, Y. (2016). Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

CHENG, YU-JUNG. “Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations.” 2016. Thesis, NSYSU. Accessed March 06, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

CHENG, YU-JUNG. “Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations.” 2016. Web. 06 Mar 2021.

Vancouver:

CHENG Y. Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations. [Internet] [Thesis]. NSYSU; 2016. [cited 2021 Mar 06]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

CHENG Y. Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

18. Bourguille, Judith. Synthèse hautes pressions et propriétés mécaniques de nouveaux nitrures, M₇N₉ (M=Zr,Hf) en comparaison avec c-Zr₃N₄ et ƞ-Ta₂N₃ : High-pressures synthesis and mechanical properties of novel nitrides, M₇N₉ (M=Zr,Hf) compared to c-Zr₃N₄ et ƞ-Ta₂N₃.

Degree: Docteur es, Physique, 2015, Sorbonne Paris Cité

 Les nitrures binaires des métaux de transition synthétisés à hautes pressions et hautes températures sont de nouveaux matériaux dont le principal intéret réside dans leur… (more)

Subjects/Keywords: Nitrures; Synthèse hautes pressions; Dureté de Vickers; Nitrides; High-pressures synthesis

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APA (6th Edition):

Bourguille, J. (2015). Synthèse hautes pressions et propriétés mécaniques de nouveaux nitrures, M₇N₉ (M=Zr,Hf) en comparaison avec c-Zr₃N₄ et ƞ-Ta₂N₃ : High-pressures synthesis and mechanical properties of novel nitrides, M₇N₉ (M=Zr,Hf) compared to c-Zr₃N₄ et ƞ-Ta₂N₃. (Doctoral Dissertation). Sorbonne Paris Cité. Retrieved from http://www.theses.fr/2015USPCD067

Chicago Manual of Style (16th Edition):

Bourguille, Judith. “Synthèse hautes pressions et propriétés mécaniques de nouveaux nitrures, M₇N₉ (M=Zr,Hf) en comparaison avec c-Zr₃N₄ et ƞ-Ta₂N₃ : High-pressures synthesis and mechanical properties of novel nitrides, M₇N₉ (M=Zr,Hf) compared to c-Zr₃N₄ et ƞ-Ta₂N₃.” 2015. Doctoral Dissertation, Sorbonne Paris Cité. Accessed March 06, 2021. http://www.theses.fr/2015USPCD067.

MLA Handbook (7th Edition):

Bourguille, Judith. “Synthèse hautes pressions et propriétés mécaniques de nouveaux nitrures, M₇N₉ (M=Zr,Hf) en comparaison avec c-Zr₃N₄ et ƞ-Ta₂N₃ : High-pressures synthesis and mechanical properties of novel nitrides, M₇N₉ (M=Zr,Hf) compared to c-Zr₃N₄ et ƞ-Ta₂N₃.” 2015. Web. 06 Mar 2021.

Vancouver:

Bourguille J. Synthèse hautes pressions et propriétés mécaniques de nouveaux nitrures, M₇N₉ (M=Zr,Hf) en comparaison avec c-Zr₃N₄ et ƞ-Ta₂N₃ : High-pressures synthesis and mechanical properties of novel nitrides, M₇N₉ (M=Zr,Hf) compared to c-Zr₃N₄ et ƞ-Ta₂N₃. [Internet] [Doctoral dissertation]. Sorbonne Paris Cité; 2015. [cited 2021 Mar 06]. Available from: http://www.theses.fr/2015USPCD067.

Council of Science Editors:

Bourguille J. Synthèse hautes pressions et propriétés mécaniques de nouveaux nitrures, M₇N₉ (M=Zr,Hf) en comparaison avec c-Zr₃N₄ et ƞ-Ta₂N₃ : High-pressures synthesis and mechanical properties of novel nitrides, M₇N₉ (M=Zr,Hf) compared to c-Zr₃N₄ et ƞ-Ta₂N₃. [Doctoral Dissertation]. Sorbonne Paris Cité; 2015. Available from: http://www.theses.fr/2015USPCD067

19. Sharma, Sanjaykumar Durgaprasad. Electronic Band Structure and Dynamical Properties of some Rare Earth and Metal Nitrides: a first- principle study.

Degree: Physics, 2013, Maharaja Krishnakumarsinhji Bhavnagar University

None

References included in chapters

Advisors/Committee Members: Jha,Prafulla K.

Subjects/Keywords: Electronic Band Structure; Metal Nitrides

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APA (6th Edition):

Sharma, S. D. (2013). Electronic Band Structure and Dynamical Properties of some Rare Earth and Metal Nitrides: a first- principle study. (Thesis). Maharaja Krishnakumarsinhji Bhavnagar University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/8640

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sharma, Sanjaykumar Durgaprasad. “Electronic Band Structure and Dynamical Properties of some Rare Earth and Metal Nitrides: a first- principle study.” 2013. Thesis, Maharaja Krishnakumarsinhji Bhavnagar University. Accessed March 06, 2021. http://shodhganga.inflibnet.ac.in/handle/10603/8640.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sharma, Sanjaykumar Durgaprasad. “Electronic Band Structure and Dynamical Properties of some Rare Earth and Metal Nitrides: a first- principle study.” 2013. Web. 06 Mar 2021.

Vancouver:

Sharma SD. Electronic Band Structure and Dynamical Properties of some Rare Earth and Metal Nitrides: a first- principle study. [Internet] [Thesis]. Maharaja Krishnakumarsinhji Bhavnagar University; 2013. [cited 2021 Mar 06]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/8640.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sharma SD. Electronic Band Structure and Dynamical Properties of some Rare Earth and Metal Nitrides: a first- principle study. [Thesis]. Maharaja Krishnakumarsinhji Bhavnagar University; 2013. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/8640

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

20. Al Balushi, Zakaria Yahya. MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers.

Degree: 2017, Penn State University

 Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This… (more)

Subjects/Keywords: Group-III Nitrides; MOCVD; Thin Films; Graphene; 2D Materials

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APA (6th Edition):

Al Balushi, Z. Y. (2017). MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/14457zya5004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Al Balushi, Zakaria Yahya. “MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers.” 2017. Thesis, Penn State University. Accessed March 06, 2021. https://submit-etda.libraries.psu.edu/catalog/14457zya5004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Al Balushi, Zakaria Yahya. “MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers.” 2017. Web. 06 Mar 2021.

Vancouver:

Al Balushi ZY. MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers. [Internet] [Thesis]. Penn State University; 2017. [cited 2021 Mar 06]. Available from: https://submit-etda.libraries.psu.edu/catalog/14457zya5004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Al Balushi ZY. MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers. [Thesis]. Penn State University; 2017. Available from: https://submit-etda.libraries.psu.edu/catalog/14457zya5004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

21. Dalmau, Rafael Federico. Aluminum Nitride Bulk Crystal Growth in a Resistively Heated Reactor.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 A resistively heated reactor capable of temperatures in excess of 2300°C was used to grow aluminum nitride (AlN) bulk single crystals from an AlN powder… (more)

Subjects/Keywords: nitrides; crystal growth; sublimation

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APA (6th Edition):

Dalmau, R. F. (2005). Aluminum Nitride Bulk Crystal Growth in a Resistively Heated Reactor. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5923

Chicago Manual of Style (16th Edition):

Dalmau, Rafael Federico. “Aluminum Nitride Bulk Crystal Growth in a Resistively Heated Reactor.” 2005. Doctoral Dissertation, North Carolina State University. Accessed March 06, 2021. http://www.lib.ncsu.edu/resolver/1840.16/5923.

MLA Handbook (7th Edition):

Dalmau, Rafael Federico. “Aluminum Nitride Bulk Crystal Growth in a Resistively Heated Reactor.” 2005. Web. 06 Mar 2021.

Vancouver:

Dalmau RF. Aluminum Nitride Bulk Crystal Growth in a Resistively Heated Reactor. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2021 Mar 06]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5923.

Council of Science Editors:

Dalmau RF. Aluminum Nitride Bulk Crystal Growth in a Resistively Heated Reactor. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5923


Indian Institute of Science

22. Herle, P Subramanya. Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides.

Degree: PhD, Faculty of Science, 2013, Indian Institute of Science

Subjects/Keywords: Transition Metal Nitrides - Synthesis; Transition Metal Nitrides - Chemical Structure; Nitrides - Synthesis; Oxynitride; Ba3W2O6N2; Ternary Nitrides; Fe3N; Inorganic Chemistry

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APA (6th Edition):

Herle, P. S. (2013). Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2185

Chicago Manual of Style (16th Edition):

Herle, P Subramanya. “Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides.” 2013. Doctoral Dissertation, Indian Institute of Science. Accessed March 06, 2021. http://etd.iisc.ac.in/handle/2005/2185.

MLA Handbook (7th Edition):

Herle, P Subramanya. “Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides.” 2013. Web. 06 Mar 2021.

Vancouver:

Herle PS. Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2013. [cited 2021 Mar 06]. Available from: http://etd.iisc.ac.in/handle/2005/2185.

Council of Science Editors:

Herle PS. Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides. [Doctoral Dissertation]. Indian Institute of Science; 2013. Available from: http://etd.iisc.ac.in/handle/2005/2185


Université Paris-Sud – Paris XI

23. Sakr, Salam. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz.

Degree: Docteur es, Physique, 2012, Université Paris-Sud – Paris XI

Les dispositifs intersousbandes à base de nitrures d’éléments III ont des propriétés très intéressantes pour l’optoélectronique et la photonique dans l’infrarouge. Les hétérostructures formées par… (more)

Subjects/Keywords: Nitrures d’éléments III; Intersousbandes; Infrarouge; III-nitrides; Intersubband; Infrared

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APA (6th Edition):

Sakr, S. (2012). Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2012PA112207

Chicago Manual of Style (16th Edition):

Sakr, Salam. “Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz.” 2012. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed March 06, 2021. http://www.theses.fr/2012PA112207.

MLA Handbook (7th Edition):

Sakr, Salam. “Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz.” 2012. Web. 06 Mar 2021.

Vancouver:

Sakr S. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2012. [cited 2021 Mar 06]. Available from: http://www.theses.fr/2012PA112207.

Council of Science Editors:

Sakr S. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2012. Available from: http://www.theses.fr/2012PA112207


Deakin University

24. Cicak, Ivica. The study of metal nitride layer formation by solid-state reactions.

Degree: 2014, Deakin University

 A new solid-state reaction to form metal nitrides has been investigated. It was confirmed that single phase chromium nitride is formed by a solid-state diffusion… (more)

Subjects/Keywords: Metal nitrides; Solid-state diffusion reaction; Single phase chromium nitride

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APA (6th Edition):

Cicak, I. (2014). The study of metal nitride layer formation by solid-state reactions. (Thesis). Deakin University. Retrieved from http://hdl.handle.net/10536/DRO/DU:30063721

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cicak, Ivica. “The study of metal nitride layer formation by solid-state reactions.” 2014. Thesis, Deakin University. Accessed March 06, 2021. http://hdl.handle.net/10536/DRO/DU:30063721.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cicak, Ivica. “The study of metal nitride layer formation by solid-state reactions.” 2014. Web. 06 Mar 2021.

Vancouver:

Cicak I. The study of metal nitride layer formation by solid-state reactions. [Internet] [Thesis]. Deakin University; 2014. [cited 2021 Mar 06]. Available from: http://hdl.handle.net/10536/DRO/DU:30063721.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cicak I. The study of metal nitride layer formation by solid-state reactions. [Thesis]. Deakin University; 2014. Available from: http://hdl.handle.net/10536/DRO/DU:30063721

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Boston University

25. Wang, Yu. Engineering Si-compatible materials based on transparent nitrides and conductive oxides (TNCOs) for broadband active plasmonic and metamaterials applications.

Degree: PhD, Electrical & Computer Engineering, 2016, Boston University

 Alternative plasmonic materials of Transparent Nitrides and Conductive Oxides (TNCOs) including Indium Tin Oxide (ITO), Al-doped ZnO (AZO) and Titanium Nitride (TiN), have been proposed… (more)

Subjects/Keywords: Electrical engineering; Metamaterials; Plasmonics; Transition metal nitrides; Transparent conductive oxides

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APA (6th Edition):

Wang, Y. (2016). Engineering Si-compatible materials based on transparent nitrides and conductive oxides (TNCOs) for broadband active plasmonic and metamaterials applications. (Doctoral Dissertation). Boston University. Retrieved from http://hdl.handle.net/2144/19507

Chicago Manual of Style (16th Edition):

Wang, Yu. “Engineering Si-compatible materials based on transparent nitrides and conductive oxides (TNCOs) for broadband active plasmonic and metamaterials applications.” 2016. Doctoral Dissertation, Boston University. Accessed March 06, 2021. http://hdl.handle.net/2144/19507.

MLA Handbook (7th Edition):

Wang, Yu. “Engineering Si-compatible materials based on transparent nitrides and conductive oxides (TNCOs) for broadband active plasmonic and metamaterials applications.” 2016. Web. 06 Mar 2021.

Vancouver:

Wang Y. Engineering Si-compatible materials based on transparent nitrides and conductive oxides (TNCOs) for broadband active plasmonic and metamaterials applications. [Internet] [Doctoral dissertation]. Boston University; 2016. [cited 2021 Mar 06]. Available from: http://hdl.handle.net/2144/19507.

Council of Science Editors:

Wang Y. Engineering Si-compatible materials based on transparent nitrides and conductive oxides (TNCOs) for broadband active plasmonic and metamaterials applications. [Doctoral Dissertation]. Boston University; 2016. Available from: http://hdl.handle.net/2144/19507

26. Hwang, David. Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays.

Degree: 2018, University of California – eScholarship, University of California

 High efficiency III-nitride light-emitting diodes (LEDs) have drastically improved solid-state lighting. They are sold in stores and are gradually replacing compact fluorescent lightbulbs because they… (more)

Subjects/Keywords: Materials Science; display; iii-nitrides; mass transfer; micro-LED

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APA (6th Edition):

Hwang, D. (2018). Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/2b28z31w

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hwang, David. “Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays.” 2018. Thesis, University of California – eScholarship, University of California. Accessed March 06, 2021. http://www.escholarship.org/uc/item/2b28z31w.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hwang, David. “Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays.” 2018. Web. 06 Mar 2021.

Vancouver:

Hwang D. Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays. [Internet] [Thesis]. University of California – eScholarship, University of California; 2018. [cited 2021 Mar 06]. Available from: http://www.escholarship.org/uc/item/2b28z31w.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hwang D. Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays. [Thesis]. University of California – eScholarship, University of California; 2018. Available from: http://www.escholarship.org/uc/item/2b28z31w

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

27. Christian, George. Photoluminescence studies of InGaN/GaN quantum well structures.

Degree: PhD, 2018, University of Manchester

 In this thesis, optical studies of c-plane InGaN/GaN quantum well (QW) structures are presented. The effects of a Si-doped underlayer (UL) on the optical properties… (more)

Subjects/Keywords: 500; photoluminescence; gallium nitride; nitrides; quantum well; semiconductor

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APA (6th Edition):

Christian, G. (2018). Photoluminescence studies of InGaN/GaN quantum well structures. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/photoluminescence-studies-of-ingangan-quantum-well-structures(aa935835-26f3-4b12-8f83-21190ffa7cb9).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.764612

Chicago Manual of Style (16th Edition):

Christian, George. “Photoluminescence studies of InGaN/GaN quantum well structures.” 2018. Doctoral Dissertation, University of Manchester. Accessed March 06, 2021. https://www.research.manchester.ac.uk/portal/en/theses/photoluminescence-studies-of-ingangan-quantum-well-structures(aa935835-26f3-4b12-8f83-21190ffa7cb9).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.764612.

MLA Handbook (7th Edition):

Christian, George. “Photoluminescence studies of InGaN/GaN quantum well structures.” 2018. Web. 06 Mar 2021.

Vancouver:

Christian G. Photoluminescence studies of InGaN/GaN quantum well structures. [Internet] [Doctoral dissertation]. University of Manchester; 2018. [cited 2021 Mar 06]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/photoluminescence-studies-of-ingangan-quantum-well-structures(aa935835-26f3-4b12-8f83-21190ffa7cb9).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.764612.

Council of Science Editors:

Christian G. Photoluminescence studies of InGaN/GaN quantum well structures. [Doctoral Dissertation]. University of Manchester; 2018. Available from: https://www.research.manchester.ac.uk/portal/en/theses/photoluminescence-studies-of-ingangan-quantum-well-structures(aa935835-26f3-4b12-8f83-21190ffa7cb9).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.764612


Hong Kong University of Science and Technology

28. Liu, Chao. Monolithic integration of III-nitride devices by selective epitaxial growth.

Degree: 2016, Hong Kong University of Science and Technology

 Recent decades have witnessed a booming development of III-nitride optoelectronic devices where a direct tunable bandgap is essential for efficient light emission in the green… (more)

Subjects/Keywords: Nitrides ; Light emitting diodes ; Materials ; Optoelectronic devices ; Epitaxy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Liu, C. (2016). Monolithic integration of III-nitride devices by selective epitaxial growth. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-86944 ; https://doi.org/10.14711/thesis-b1626116 ; http://repository.ust.hk/ir/bitstream/1783.1-86944/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Chao. “Monolithic integration of III-nitride devices by selective epitaxial growth.” 2016. Thesis, Hong Kong University of Science and Technology. Accessed March 06, 2021. http://repository.ust.hk/ir/Record/1783.1-86944 ; https://doi.org/10.14711/thesis-b1626116 ; http://repository.ust.hk/ir/bitstream/1783.1-86944/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Chao. “Monolithic integration of III-nitride devices by selective epitaxial growth.” 2016. Web. 06 Mar 2021.

Vancouver:

Liu C. Monolithic integration of III-nitride devices by selective epitaxial growth. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2016. [cited 2021 Mar 06]. Available from: http://repository.ust.hk/ir/Record/1783.1-86944 ; https://doi.org/10.14711/thesis-b1626116 ; http://repository.ust.hk/ir/bitstream/1783.1-86944/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu C. Monolithic integration of III-nitride devices by selective epitaxial growth. [Thesis]. Hong Kong University of Science and Technology; 2016. Available from: http://repository.ust.hk/ir/Record/1783.1-86944 ; https://doi.org/10.14711/thesis-b1626116 ; http://repository.ust.hk/ir/bitstream/1783.1-86944/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

29. Tian, Zhenhuan MAE. Selective area growth of III-nitride based micro-structures on three dimensional patterned sapphire substrates and related device fabrication.

Degree: 2018, Hong Kong University of Science and Technology

 GaN based light-emitting diodes (LEDs) can cover the entire range of visible light spectrum, thereby showing great potential in various applications. However, III-V nitrides planar… (more)

Subjects/Keywords: Light emitting diodes ; Optical properties ; Mechanical properties ; Microstructure ; Semiconductors ; Materials ; Nitrides

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tian, Z. M. (2018). Selective area growth of III-nitride based micro-structures on three dimensional patterned sapphire substrates and related device fabrication. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-96018 ; https://doi.org/10.14711/thesis-991012638163503412 ; http://repository.ust.hk/ir/bitstream/1783.1-96018/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tian, Zhenhuan MAE. “Selective area growth of III-nitride based micro-structures on three dimensional patterned sapphire substrates and related device fabrication.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed March 06, 2021. http://repository.ust.hk/ir/Record/1783.1-96018 ; https://doi.org/10.14711/thesis-991012638163503412 ; http://repository.ust.hk/ir/bitstream/1783.1-96018/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tian, Zhenhuan MAE. “Selective area growth of III-nitride based micro-structures on three dimensional patterned sapphire substrates and related device fabrication.” 2018. Web. 06 Mar 2021.

Vancouver:

Tian ZM. Selective area growth of III-nitride based micro-structures on three dimensional patterned sapphire substrates and related device fabrication. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2021 Mar 06]. Available from: http://repository.ust.hk/ir/Record/1783.1-96018 ; https://doi.org/10.14711/thesis-991012638163503412 ; http://repository.ust.hk/ir/bitstream/1783.1-96018/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tian ZM. Selective area growth of III-nitride based micro-structures on three dimensional patterned sapphire substrates and related device fabrication. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: http://repository.ust.hk/ir/Record/1783.1-96018 ; https://doi.org/10.14711/thesis-991012638163503412 ; http://repository.ust.hk/ir/bitstream/1783.1-96018/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University College Cork

30. Caro Bayo, Miguel Ángel. Theory of elasticity and electric polarization effects in the group-III nitrides.

Degree: 2013, University College Cork

 In this work, the properties of strained tetrahedrally bonded materials are explored theoretically, with special focus on group-III nitrides. In order to do so, a… (more)

Subjects/Keywords: AlN; DFT; GaN; InN; Elasticity; Polarization; Piezoelectricity; Strain; Semiconductors; Nitrides

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Caro Bayo, M. . (2013). Theory of elasticity and electric polarization effects in the group-III nitrides. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/1344

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Caro Bayo, Miguel Ángel. “Theory of elasticity and electric polarization effects in the group-III nitrides.” 2013. Thesis, University College Cork. Accessed March 06, 2021. http://hdl.handle.net/10468/1344.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Caro Bayo, Miguel Ángel. “Theory of elasticity and electric polarization effects in the group-III nitrides.” 2013. Web. 06 Mar 2021.

Vancouver:

Caro Bayo M. Theory of elasticity and electric polarization effects in the group-III nitrides. [Internet] [Thesis]. University College Cork; 2013. [cited 2021 Mar 06]. Available from: http://hdl.handle.net/10468/1344.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Caro Bayo M. Theory of elasticity and electric polarization effects in the group-III nitrides. [Thesis]. University College Cork; 2013. Available from: http://hdl.handle.net/10468/1344

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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