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You searched for subject:(Nitrides). Showing records 1 – 30 of 257 total matches.

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Case Western Reserve University

1. Mitra, Chandrima. COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GAN.

Degree: PhD, Physics, 2009, Case Western Reserve University

  The thesis presented here deals electronic and magnetic properties of Gd doped GaN and Gadolinium pnictides. GdN is a ferromagnetic semiconductor while the other… (more)

Subjects/Keywords: magnetism; nitrides

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APA (6th Edition):

Mitra, C. (2009). COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GAN. (Doctoral Dissertation). Case Western Reserve University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=case1238690053

Chicago Manual of Style (16th Edition):

Mitra, Chandrima. “COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GAN.” 2009. Doctoral Dissertation, Case Western Reserve University. Accessed April 20, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=case1238690053.

MLA Handbook (7th Edition):

Mitra, Chandrima. “COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GAN.” 2009. Web. 20 Apr 2019.

Vancouver:

Mitra C. COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GAN. [Internet] [Doctoral dissertation]. Case Western Reserve University; 2009. [cited 2019 Apr 20]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=case1238690053.

Council of Science Editors:

Mitra C. COMPUTATIONAL STUDIES OF GADOLINIUM IN NITRIDES : BULK GDN AND GD-DOPED GAN. [Doctoral Dissertation]. Case Western Reserve University; 2009. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=case1238690053


University of Notre Dame

2. Yan He. The Effect of N-Type Doping on the Optical Spectra of Dilute Nitrides: Possible Applications</h1>.

Degree: PhD, Electrical Engineering, 2011, University of Notre Dame

  This dissertation investigates the effect of n-type doping on the optical spectra of the dilute nitride GaAsN alloy system. Using conventional and high spatial… (more)

Subjects/Keywords: dilute nitrides

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APA (6th Edition):

He, Y. (2011). The Effect of N-Type Doping on the Optical Spectra of Dilute Nitrides: Possible Applications</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/sj13902281t

Chicago Manual of Style (16th Edition):

He, Yan. “The Effect of N-Type Doping on the Optical Spectra of Dilute Nitrides: Possible Applications</h1>.” 2011. Doctoral Dissertation, University of Notre Dame. Accessed April 20, 2019. https://curate.nd.edu/show/sj13902281t.

MLA Handbook (7th Edition):

He, Yan. “The Effect of N-Type Doping on the Optical Spectra of Dilute Nitrides: Possible Applications</h1>.” 2011. Web. 20 Apr 2019.

Vancouver:

He Y. The Effect of N-Type Doping on the Optical Spectra of Dilute Nitrides: Possible Applications</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2011. [cited 2019 Apr 20]. Available from: https://curate.nd.edu/show/sj13902281t.

Council of Science Editors:

He Y. The Effect of N-Type Doping on the Optical Spectra of Dilute Nitrides: Possible Applications</h1>. [Doctoral Dissertation]. University of Notre Dame; 2011. Available from: https://curate.nd.edu/show/sj13902281t


Latrobe University

3. Hashim, Hashimah. The growth and characterisation of the dilute nitride InGaAsN.

Degree: PhD, 2012, Latrobe University

Thesis (Ph.D.) - La Trobe University, 2012

Submission note: "A thesis submitted in total fulfilment of the requirements for the degree of Doctor of Philosophy… (more)

Subjects/Keywords: Nitrides.; Semiconductors  – Materials.

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APA (6th Edition):

Hashim, H. (2012). The growth and characterisation of the dilute nitride InGaAsN. (Doctoral Dissertation). Latrobe University. Retrieved from http://hdl.handle.net/1959.9/522346

Chicago Manual of Style (16th Edition):

Hashim, Hashimah. “The growth and characterisation of the dilute nitride InGaAsN.” 2012. Doctoral Dissertation, Latrobe University. Accessed April 20, 2019. http://hdl.handle.net/1959.9/522346.

MLA Handbook (7th Edition):

Hashim, Hashimah. “The growth and characterisation of the dilute nitride InGaAsN.” 2012. Web. 20 Apr 2019.

Vancouver:

Hashim H. The growth and characterisation of the dilute nitride InGaAsN. [Internet] [Doctoral dissertation]. Latrobe University; 2012. [cited 2019 Apr 20]. Available from: http://hdl.handle.net/1959.9/522346.

Council of Science Editors:

Hashim H. The growth and characterisation of the dilute nitride InGaAsN. [Doctoral Dissertation]. Latrobe University; 2012. Available from: http://hdl.handle.net/1959.9/522346


University of Notre Dame

4. Satyaki Ganguly. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.

Degree: PhD, Electrical Engineering, 2014, University of Notre Dame

  Owing to the large band gap (EgGaN=3.4eV) and high electron saturation velocity, GaN based high electron mobility transistors (HEMTs) are attractive for high voltage… (more)

Subjects/Keywords: III-Nitrides; MBE

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APA (6th Edition):

Ganguly, S. (2014). High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/0c483j34v8f

Chicago Manual of Style (16th Edition):

Ganguly, Satyaki. “High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.” 2014. Doctoral Dissertation, University of Notre Dame. Accessed April 20, 2019. https://curate.nd.edu/show/0c483j34v8f.

MLA Handbook (7th Edition):

Ganguly, Satyaki. “High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.” 2014. Web. 20 Apr 2019.

Vancouver:

Ganguly S. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2014. [cited 2019 Apr 20]. Available from: https://curate.nd.edu/show/0c483j34v8f.

Council of Science Editors:

Ganguly S. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. [Doctoral Dissertation]. University of Notre Dame; 2014. Available from: https://curate.nd.edu/show/0c483j34v8f


The Ohio State University

5. Jessen, Gregg Huascar. Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performance.

Degree: PhD, Graduate School, 2002, The Ohio State University

Subjects/Keywords: Engineering; Semiconductors; Nitrides

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APA (6th Edition):

Jessen, G. H. (2002). Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performance. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1486463803603331

Chicago Manual of Style (16th Edition):

Jessen, Gregg Huascar. “Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performance.” 2002. Doctoral Dissertation, The Ohio State University. Accessed April 20, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486463803603331.

MLA Handbook (7th Edition):

Jessen, Gregg Huascar. “Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performance.” 2002. Web. 20 Apr 2019.

Vancouver:

Jessen GH. Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performance. [Internet] [Doctoral dissertation]. The Ohio State University; 2002. [cited 2019 Apr 20]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486463803603331.

Council of Science Editors:

Jessen GH. Investigation and characterization of AlGaN/GaN device structures and the effects of material defects and processing on device performance. [Doctoral Dissertation]. The Ohio State University; 2002. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486463803603331


University of Hong Kong

6. 江河; Jiang, He. Laser spectroscopy of transition metal nitrides.

Degree: PhD, 1999, University of Hong Kong

published_or_final_version

Chemistry

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Cheung, ASC.

Subjects/Keywords: Nitrides.; Laser spectroscopy

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APA (6th Edition):

江河; Jiang, H. (1999). Laser spectroscopy of transition metal nitrides. (Doctoral Dissertation). University of Hong Kong. Retrieved from Jiang, H. [江河]. (1999). Laser spectroscopy of transition metal nitrides. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3124038 ; http://dx.doi.org/10.5353/th_b3124038 ; http://hdl.handle.net/10722/35299

Chicago Manual of Style (16th Edition):

江河; Jiang, He. “Laser spectroscopy of transition metal nitrides.” 1999. Doctoral Dissertation, University of Hong Kong. Accessed April 20, 2019. Jiang, H. [江河]. (1999). Laser spectroscopy of transition metal nitrides. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3124038 ; http://dx.doi.org/10.5353/th_b3124038 ; http://hdl.handle.net/10722/35299.

MLA Handbook (7th Edition):

江河; Jiang, He. “Laser spectroscopy of transition metal nitrides.” 1999. Web. 20 Apr 2019.

Vancouver:

江河; Jiang H. Laser spectroscopy of transition metal nitrides. [Internet] [Doctoral dissertation]. University of Hong Kong; 1999. [cited 2019 Apr 20]. Available from: Jiang, H. [江河]. (1999). Laser spectroscopy of transition metal nitrides. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3124038 ; http://dx.doi.org/10.5353/th_b3124038 ; http://hdl.handle.net/10722/35299.

Council of Science Editors:

江河; Jiang H. Laser spectroscopy of transition metal nitrides. [Doctoral Dissertation]. University of Hong Kong; 1999. Available from: Jiang, H. [江河]. (1999). Laser spectroscopy of transition metal nitrides. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3124038 ; http://dx.doi.org/10.5353/th_b3124038 ; http://hdl.handle.net/10722/35299


University of Hong Kong

7. 蘇偉基.; So, Wai-kei. A study of surface properties of III-nitride semiconductors by first principles total energy calculation.

Degree: PhD, 2006, University of Hong Kong

abstract

published_or_final_version

Physics

Doctoral

Doctor of Philosophy

Subjects/Keywords: Nitrides.; Semiconductors - Surfaces.

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APA (6th Edition):

蘇偉基.; So, W. (2006). A study of surface properties of III-nitride semiconductors by first principles total energy calculation. (Doctoral Dissertation). University of Hong Kong. Retrieved from So, W. [蘇偉基]. (2006). A study of surface properties of III-nitride semiconductors by first principles total energy calculation. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3860695 ; http://dx.doi.org/10.5353/th_b3860695 ; http://hdl.handle.net/10722/52376

Chicago Manual of Style (16th Edition):

蘇偉基.; So, Wai-kei. “A study of surface properties of III-nitride semiconductors by first principles total energy calculation.” 2006. Doctoral Dissertation, University of Hong Kong. Accessed April 20, 2019. So, W. [蘇偉基]. (2006). A study of surface properties of III-nitride semiconductors by first principles total energy calculation. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3860695 ; http://dx.doi.org/10.5353/th_b3860695 ; http://hdl.handle.net/10722/52376.

MLA Handbook (7th Edition):

蘇偉基.; So, Wai-kei. “A study of surface properties of III-nitride semiconductors by first principles total energy calculation.” 2006. Web. 20 Apr 2019.

Vancouver:

蘇偉基.; So W. A study of surface properties of III-nitride semiconductors by first principles total energy calculation. [Internet] [Doctoral dissertation]. University of Hong Kong; 2006. [cited 2019 Apr 20]. Available from: So, W. [蘇偉基]. (2006). A study of surface properties of III-nitride semiconductors by first principles total energy calculation. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3860695 ; http://dx.doi.org/10.5353/th_b3860695 ; http://hdl.handle.net/10722/52376.

Council of Science Editors:

蘇偉基.; So W. A study of surface properties of III-nitride semiconductors by first principles total energy calculation. [Doctoral Dissertation]. University of Hong Kong; 2006. Available from: So, W. [蘇偉基]. (2006). A study of surface properties of III-nitride semiconductors by first principles total energy calculation. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3860695 ; http://dx.doi.org/10.5353/th_b3860695 ; http://hdl.handle.net/10722/52376


Arizona State University

8. Hill, Arlinda. Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors.

Degree: PhD, Physics, 2011, Arizona State University

 III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium… (more)

Subjects/Keywords: Physics; Materials Science; III nitrides; Semiconductors; thermodynamics

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APA (6th Edition):

Hill, A. (2011). Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/9035

Chicago Manual of Style (16th Edition):

Hill, Arlinda. “Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors.” 2011. Doctoral Dissertation, Arizona State University. Accessed April 20, 2019. http://repository.asu.edu/items/9035.

MLA Handbook (7th Edition):

Hill, Arlinda. “Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors.” 2011. Web. 20 Apr 2019.

Vancouver:

Hill A. Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors. [Internet] [Doctoral dissertation]. Arizona State University; 2011. [cited 2019 Apr 20]. Available from: http://repository.asu.edu/items/9035.

Council of Science Editors:

Hill A. Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors. [Doctoral Dissertation]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/9035


University of Manchester

9. Christian, George. Photoluminescence Studies of InGaN/GaN Quantum Well Structures.

Degree: 2018, University of Manchester

 In this thesis, optical studies of c-plane InGaN/GaN quantum well (QW) structures are presented. The effects of a Si-doped underlayer (UL) on the optical properties… (more)

Subjects/Keywords: photoluminescence; gallium nitride; nitrides; quantum well; semiconductor

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APA (6th Edition):

Christian, G. (2018). Photoluminescence Studies of InGaN/GaN Quantum Well Structures. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549

Chicago Manual of Style (16th Edition):

Christian, George. “Photoluminescence Studies of InGaN/GaN Quantum Well Structures.” 2018. Doctoral Dissertation, University of Manchester. Accessed April 20, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549.

MLA Handbook (7th Edition):

Christian, George. “Photoluminescence Studies of InGaN/GaN Quantum Well Structures.” 2018. Web. 20 Apr 2019.

Vancouver:

Christian G. Photoluminescence Studies of InGaN/GaN Quantum Well Structures. [Internet] [Doctoral dissertation]. University of Manchester; 2018. [cited 2019 Apr 20]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549.

Council of Science Editors:

Christian G. Photoluminescence Studies of InGaN/GaN Quantum Well Structures. [Doctoral Dissertation]. University of Manchester; 2018. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549


Cornell University

10. Robbins, Spencer. Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides .

Degree: 2015, Cornell University

 Controlling the structure of inorganic materials on the mesoscale (2-50 nm) is desirable for many applications and can influence the materials' properties and performance in… (more)

Subjects/Keywords: block copolymers; mesoporous materials; metal nitrides

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APA (6th Edition):

Robbins, S. (2015). Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/39425

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Robbins, Spencer. “Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides .” 2015. Thesis, Cornell University. Accessed April 20, 2019. http://hdl.handle.net/1813/39425.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Robbins, Spencer. “Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides .” 2015. Web. 20 Apr 2019.

Vancouver:

Robbins S. Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides . [Internet] [Thesis]. Cornell University; 2015. [cited 2019 Apr 20]. Available from: http://hdl.handle.net/1813/39425.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Robbins S. Synthesis And Characterization Of Ordered Mesoporous Transition Metal Oxides And Nitrides . [Thesis]. Cornell University; 2015. Available from: http://hdl.handle.net/1813/39425

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University College Cork

11. Smith, Matthew D. Development of InAlN HEMTs for space application.

Degree: 2016, University College Cork

 This thesis investigates the emerging InAlN high electron mobility transistor (HEMT) technology with respect to its application in the space industry. The manufacturing processes and… (more)

Subjects/Keywords: Transistors; Space; Nitrides; Reliability; Semiconductors; Radiation; Electronics

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APA (6th Edition):

Smith, M. D. (2016). Development of InAlN HEMTs for space application. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/2257

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Smith, Matthew D. “Development of InAlN HEMTs for space application.” 2016. Thesis, University College Cork. Accessed April 20, 2019. http://hdl.handle.net/10468/2257.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Smith, Matthew D. “Development of InAlN HEMTs for space application.” 2016. Web. 20 Apr 2019.

Vancouver:

Smith MD. Development of InAlN HEMTs for space application. [Internet] [Thesis]. University College Cork; 2016. [cited 2019 Apr 20]. Available from: http://hdl.handle.net/10468/2257.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Smith MD. Development of InAlN HEMTs for space application. [Thesis]. University College Cork; 2016. Available from: http://hdl.handle.net/10468/2257

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

12. Jai Kishan Verma. Polarization Engineering for Novel III-V Nitride Device Structures</h1>.

Degree: MSin Electrical Engineering, Electrical Engineering, 2010, University of Notre Dame

  III-V nitride semiconductors have attracted considerable attention for opto-electronic and electronic devices as they are direct band gap semiconductors spanning a wide range of… (more)

Subjects/Keywords: Nitrides; UV-LEDs; Interband; Polarization; LED

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APA (6th Edition):

Verma, J. K. (2010). Polarization Engineering for Novel III-V Nitride Device Structures</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/r494vh56b48

Chicago Manual of Style (16th Edition):

Verma, Jai Kishan. “Polarization Engineering for Novel III-V Nitride Device Structures</h1>.” 2010. Masters Thesis, University of Notre Dame. Accessed April 20, 2019. https://curate.nd.edu/show/r494vh56b48.

MLA Handbook (7th Edition):

Verma, Jai Kishan. “Polarization Engineering for Novel III-V Nitride Device Structures</h1>.” 2010. Web. 20 Apr 2019.

Vancouver:

Verma JK. Polarization Engineering for Novel III-V Nitride Device Structures</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2010. [cited 2019 Apr 20]. Available from: https://curate.nd.edu/show/r494vh56b48.

Council of Science Editors:

Verma JK. Polarization Engineering for Novel III-V Nitride Device Structures</h1>. [Masters Thesis]. University of Notre Dame; 2010. Available from: https://curate.nd.edu/show/r494vh56b48


University of Florida

13. Wood, David P. Growth of Gallium Nitride and Indium Gallium Nitride Nano/Microstructures via Metal Organic Chemical Vapor Deposition.

Degree: PhD, Chemical Engineering, 2014, University of Florida

 Group III-nitride compound semiconductors have established success in optoelectronic devices, and have seen novel applications in the area of planar and nanostructured photovoltaics. This work… (more)

Subjects/Keywords: Alloys; Diameters; Inlets; Nanorods; Nanotubes; Nanowires; Narrative devices; Nitrides; Photovoltaic cells; Thermal decomposition; gallium  – gan  – indium  – ingan  – inn  – mocvd  – nitrides  – photovoltaics

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APA (6th Edition):

Wood, D. P. (2014). Growth of Gallium Nitride and Indium Gallium Nitride Nano/Microstructures via Metal Organic Chemical Vapor Deposition. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0046302

Chicago Manual of Style (16th Edition):

Wood, David P. “Growth of Gallium Nitride and Indium Gallium Nitride Nano/Microstructures via Metal Organic Chemical Vapor Deposition.” 2014. Doctoral Dissertation, University of Florida. Accessed April 20, 2019. http://ufdc.ufl.edu/UFE0046302.

MLA Handbook (7th Edition):

Wood, David P. “Growth of Gallium Nitride and Indium Gallium Nitride Nano/Microstructures via Metal Organic Chemical Vapor Deposition.” 2014. Web. 20 Apr 2019.

Vancouver:

Wood DP. Growth of Gallium Nitride and Indium Gallium Nitride Nano/Microstructures via Metal Organic Chemical Vapor Deposition. [Internet] [Doctoral dissertation]. University of Florida; 2014. [cited 2019 Apr 20]. Available from: http://ufdc.ufl.edu/UFE0046302.

Council of Science Editors:

Wood DP. Growth of Gallium Nitride and Indium Gallium Nitride Nano/Microstructures via Metal Organic Chemical Vapor Deposition. [Doctoral Dissertation]. University of Florida; 2014. Available from: http://ufdc.ufl.edu/UFE0046302

14. VANDEMAELE, MICHIEL. Numerical simulation of InN based HEMTs.

Degree: 2015, Chalmers University of Technology

 Invented in 1980, High Electron Mobility Transistors(HEMTs) are now widely used in high-frequency electronics. They are fabricated in different material systems and a possible new… (more)

Subjects/Keywords: indium nitride (InN); III-nitrides; HEMT; numerical simulations; TCAD

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APA (6th Edition):

VANDEMAELE, M. (2015). Numerical simulation of InN based HEMTs. (Thesis). Chalmers University of Technology. Retrieved from http://studentarbeten.chalmers.se/publication/218658-numerical-simulation-of-inn-based-hemts

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

VANDEMAELE, MICHIEL. “Numerical simulation of InN based HEMTs.” 2015. Thesis, Chalmers University of Technology. Accessed April 20, 2019. http://studentarbeten.chalmers.se/publication/218658-numerical-simulation-of-inn-based-hemts.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

VANDEMAELE, MICHIEL. “Numerical simulation of InN based HEMTs.” 2015. Web. 20 Apr 2019.

Vancouver:

VANDEMAELE M. Numerical simulation of InN based HEMTs. [Internet] [Thesis]. Chalmers University of Technology; 2015. [cited 2019 Apr 20]. Available from: http://studentarbeten.chalmers.se/publication/218658-numerical-simulation-of-inn-based-hemts.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

VANDEMAELE M. Numerical simulation of InN based HEMTs. [Thesis]. Chalmers University of Technology; 2015. Available from: http://studentarbeten.chalmers.se/publication/218658-numerical-simulation-of-inn-based-hemts

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

15. Soumelidou, Maria-Marianna. Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας.

Degree: 2017, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

The aim of the present thesis was the study of the electronic, structural and elastic properties of III-nitrides and their alloys using both experimental techniques… (more)

Subjects/Keywords: Νιτρίδια III-V; Ατομιστική προσομοίωση; III-Nitrides; Atomistic simulations

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APA (6th Edition):

Soumelidou, M. (2017). Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας. (Thesis). Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Retrieved from http://hdl.handle.net/10442/hedi/42069

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Soumelidou, Maria-Marianna. “Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας.” 2017. Thesis, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Accessed April 20, 2019. http://hdl.handle.net/10442/hedi/42069.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Soumelidou, Maria-Marianna. “Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας.” 2017. Web. 20 Apr 2019.

Vancouver:

Soumelidou M. Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας. [Internet] [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. [cited 2019 Apr 20]. Available from: http://hdl.handle.net/10442/hedi/42069.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Soumelidou M. Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας. [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. Available from: http://hdl.handle.net/10442/hedi/42069

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

16. Bourguille, Judith. Synthèse hautes pressions et propriétés mécaniques de nouveaux nitrures, M₇N₉ (M=Zr,Hf) en comparaison avec c-Zr₃N₄ et ƞ-Ta₂N₃ : High-pressures synthesis and mechanical properties of novel nitrides, M₇N₉ (M=Zr,Hf) compared to c-Zr₃N₄ et ƞ-Ta₂N₃.

Degree: Docteur es, Physique, 2015, Sorbonne Paris Cité

 Les nitrures binaires des métaux de transition synthétisés à hautes pressions et hautes températures sont de nouveaux matériaux dont le principal intéret réside dans leur… (more)

Subjects/Keywords: Nitrures; Synthèse hautes pressions; Dureté de Vickers; Nitrides; High-pressures synthesis

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APA (6th Edition):

Bourguille, J. (2015). Synthèse hautes pressions et propriétés mécaniques de nouveaux nitrures, M₇N₉ (M=Zr,Hf) en comparaison avec c-Zr₃N₄ et ƞ-Ta₂N₃ : High-pressures synthesis and mechanical properties of novel nitrides, M₇N₉ (M=Zr,Hf) compared to c-Zr₃N₄ et ƞ-Ta₂N₃. (Doctoral Dissertation). Sorbonne Paris Cité. Retrieved from http://www.theses.fr/2015USPCD067

Chicago Manual of Style (16th Edition):

Bourguille, Judith. “Synthèse hautes pressions et propriétés mécaniques de nouveaux nitrures, M₇N₉ (M=Zr,Hf) en comparaison avec c-Zr₃N₄ et ƞ-Ta₂N₃ : High-pressures synthesis and mechanical properties of novel nitrides, M₇N₉ (M=Zr,Hf) compared to c-Zr₃N₄ et ƞ-Ta₂N₃.” 2015. Doctoral Dissertation, Sorbonne Paris Cité. Accessed April 20, 2019. http://www.theses.fr/2015USPCD067.

MLA Handbook (7th Edition):

Bourguille, Judith. “Synthèse hautes pressions et propriétés mécaniques de nouveaux nitrures, M₇N₉ (M=Zr,Hf) en comparaison avec c-Zr₃N₄ et ƞ-Ta₂N₃ : High-pressures synthesis and mechanical properties of novel nitrides, M₇N₉ (M=Zr,Hf) compared to c-Zr₃N₄ et ƞ-Ta₂N₃.” 2015. Web. 20 Apr 2019.

Vancouver:

Bourguille J. Synthèse hautes pressions et propriétés mécaniques de nouveaux nitrures, M₇N₉ (M=Zr,Hf) en comparaison avec c-Zr₃N₄ et ƞ-Ta₂N₃ : High-pressures synthesis and mechanical properties of novel nitrides, M₇N₉ (M=Zr,Hf) compared to c-Zr₃N₄ et ƞ-Ta₂N₃. [Internet] [Doctoral dissertation]. Sorbonne Paris Cité; 2015. [cited 2019 Apr 20]. Available from: http://www.theses.fr/2015USPCD067.

Council of Science Editors:

Bourguille J. Synthèse hautes pressions et propriétés mécaniques de nouveaux nitrures, M₇N₉ (M=Zr,Hf) en comparaison avec c-Zr₃N₄ et ƞ-Ta₂N₃ : High-pressures synthesis and mechanical properties of novel nitrides, M₇N₉ (M=Zr,Hf) compared to c-Zr₃N₄ et ƞ-Ta₂N₃. [Doctoral Dissertation]. Sorbonne Paris Cité; 2015. Available from: http://www.theses.fr/2015USPCD067


Loughborough University

17. McInnes, Andrew D. Studies of novel photoanodic materials for solar water splitting.

Degree: PhD, 2017, Loughborough University

 Anthropogenic climate change presents an unrivalled threat to environmental stability and the prosperity of future generations. Utilising abundant, renewable resources in energy generation and storage… (more)

Subjects/Keywords: Solar water splitting; Semiconductors; Photoanodes; Thin films; AACVD; Nanoclusters; Nitrides

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APA (6th Edition):

McInnes, A. D. (2017). Studies of novel photoanodic materials for solar water splitting. (Doctoral Dissertation). Loughborough University. Retrieved from https://dspace.lboro.ac.uk/2134/26605 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.734159

Chicago Manual of Style (16th Edition):

McInnes, Andrew D. “Studies of novel photoanodic materials for solar water splitting.” 2017. Doctoral Dissertation, Loughborough University. Accessed April 20, 2019. https://dspace.lboro.ac.uk/2134/26605 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.734159.

MLA Handbook (7th Edition):

McInnes, Andrew D. “Studies of novel photoanodic materials for solar water splitting.” 2017. Web. 20 Apr 2019.

Vancouver:

McInnes AD. Studies of novel photoanodic materials for solar water splitting. [Internet] [Doctoral dissertation]. Loughborough University; 2017. [cited 2019 Apr 20]. Available from: https://dspace.lboro.ac.uk/2134/26605 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.734159.

Council of Science Editors:

McInnes AD. Studies of novel photoanodic materials for solar water splitting. [Doctoral Dissertation]. Loughborough University; 2017. Available from: https://dspace.lboro.ac.uk/2134/26605 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.734159


Indian Institute of Science

18. Herle, P Subramanya. Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides.

Degree: 1998, Indian Institute of Science

Subjects/Keywords: Transition Metal Nitrides - Synthesis; Transition Metal Nitrides - Chemical Structure; Nitrides - Synthesis; Oxynitride; Ba3W2O6N2; Ternary Nitrides; Fe3N; Inorganic Chemistry

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APA (6th Edition):

Herle, P. S. (1998). Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2185

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Herle, P Subramanya. “Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides.” 1998. Thesis, Indian Institute of Science. Accessed April 20, 2019. http://hdl.handle.net/2005/2185.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Herle, P Subramanya. “Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides.” 1998. Web. 20 Apr 2019.

Vancouver:

Herle PS. Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides. [Internet] [Thesis]. Indian Institute of Science; 1998. [cited 2019 Apr 20]. Available from: http://hdl.handle.net/2005/2185.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Herle PS. Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides. [Thesis]. Indian Institute of Science; 1998. Available from: http://hdl.handle.net/2005/2185

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

19. Sharma, Sanjaykumar Durgaprasad. Electronic Band Structure and Dynamical Properties of some Rare Earth and Metal Nitrides: a first- principle study.

Degree: Physics, 2013, Maharaja Krishnakumarsinhji Bhavnagar University

None

References included in chapters

Advisors/Committee Members: Jha,Prafulla K.

Subjects/Keywords: Electronic Band Structure; Metal Nitrides

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APA (6th Edition):

Sharma, S. D. (2013). Electronic Band Structure and Dynamical Properties of some Rare Earth and Metal Nitrides: a first- principle study. (Thesis). Maharaja Krishnakumarsinhji Bhavnagar University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/8640

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sharma, Sanjaykumar Durgaprasad. “Electronic Band Structure and Dynamical Properties of some Rare Earth and Metal Nitrides: a first- principle study.” 2013. Thesis, Maharaja Krishnakumarsinhji Bhavnagar University. Accessed April 20, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/8640.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sharma, Sanjaykumar Durgaprasad. “Electronic Band Structure and Dynamical Properties of some Rare Earth and Metal Nitrides: a first- principle study.” 2013. Web. 20 Apr 2019.

Vancouver:

Sharma SD. Electronic Band Structure and Dynamical Properties of some Rare Earth and Metal Nitrides: a first- principle study. [Internet] [Thesis]. Maharaja Krishnakumarsinhji Bhavnagar University; 2013. [cited 2019 Apr 20]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/8640.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sharma SD. Electronic Band Structure and Dynamical Properties of some Rare Earth and Metal Nitrides: a first- principle study. [Thesis]. Maharaja Krishnakumarsinhji Bhavnagar University; 2013. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/8640

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

20. Koukoula, Triantafyllia. Structural properties and phenomena in low-dimensional III-N compound semiconductors.

Degree: 2015, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

This thesis concerns the study of the structural properties and phenomena in low-dimensional III-Nitride compound semiconductors by means of Transmission electron microscopy (TEM). TEM techniques… (more)

Subjects/Keywords: Νιτρίδια; Ηλεκτρονική μικροσκοπία διέλευσης; Νανοδομές; III-Nitrides; Transmision electron microscopy; Nanostructures

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APA (6th Edition):

Koukoula, T. (2015). Structural properties and phenomena in low-dimensional III-N compound semiconductors. (Thesis). Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Retrieved from http://hdl.handle.net/10442/hedi/35396

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Koukoula, Triantafyllia. “Structural properties and phenomena in low-dimensional III-N compound semiconductors.” 2015. Thesis, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Accessed April 20, 2019. http://hdl.handle.net/10442/hedi/35396.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Koukoula, Triantafyllia. “Structural properties and phenomena in low-dimensional III-N compound semiconductors.” 2015. Web. 20 Apr 2019.

Vancouver:

Koukoula T. Structural properties and phenomena in low-dimensional III-N compound semiconductors. [Internet] [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2015. [cited 2019 Apr 20]. Available from: http://hdl.handle.net/10442/hedi/35396.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Koukoula T. Structural properties and phenomena in low-dimensional III-N compound semiconductors. [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2015. Available from: http://hdl.handle.net/10442/hedi/35396

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


The Ohio State University

21. Seibel, Harry Andrew, II. Psuedo-Oxides: Property Tailoring Through the Integration of Nitrogen and Fluorine.

Degree: PhD, Chemistry, 2009, The Ohio State University

 This research focuses on the study of inorganic solids in which the anions of oxygen, fluorine and nitrogen have been incorporated. These compounds have been… (more)

Subjects/Keywords: Chemistry; Materials Science; Mixed anions; Nitrides; Fluorides; Photocatalysis; NLO; Polar solids

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APA (6th Edition):

Seibel, Harry Andrew, I. (2009). Psuedo-Oxides: Property Tailoring Through the Integration of Nitrogen and Fluorine. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1250624527

Chicago Manual of Style (16th Edition):

Seibel, Harry Andrew, II. “Psuedo-Oxides: Property Tailoring Through the Integration of Nitrogen and Fluorine.” 2009. Doctoral Dissertation, The Ohio State University. Accessed April 20, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250624527.

MLA Handbook (7th Edition):

Seibel, Harry Andrew, II. “Psuedo-Oxides: Property Tailoring Through the Integration of Nitrogen and Fluorine.” 2009. Web. 20 Apr 2019.

Vancouver:

Seibel, Harry Andrew I. Psuedo-Oxides: Property Tailoring Through the Integration of Nitrogen and Fluorine. [Internet] [Doctoral dissertation]. The Ohio State University; 2009. [cited 2019 Apr 20]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1250624527.

Council of Science Editors:

Seibel, Harry Andrew I. Psuedo-Oxides: Property Tailoring Through the Integration of Nitrogen and Fluorine. [Doctoral Dissertation]. The Ohio State University; 2009. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1250624527


RMIT University

22. Hubbard, P. Characterisation of a commercial active screen plasma nitriding system.

Degree: 2007, RMIT University

 Nitriding is a plasma based processing technique that is used to improve the surface properties of components and products in many areas including the aerospace,… (more)

Subjects/Keywords: Fields of Research; Nitrides

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APA (6th Edition):

Hubbard, P. (2007). Characterisation of a commercial active screen plasma nitriding system. (Thesis). RMIT University. Retrieved from http://researchbank.rmit.edu.au/view/rmit:6699

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hubbard, P. “Characterisation of a commercial active screen plasma nitriding system.” 2007. Thesis, RMIT University. Accessed April 20, 2019. http://researchbank.rmit.edu.au/view/rmit:6699.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hubbard, P. “Characterisation of a commercial active screen plasma nitriding system.” 2007. Web. 20 Apr 2019.

Vancouver:

Hubbard P. Characterisation of a commercial active screen plasma nitriding system. [Internet] [Thesis]. RMIT University; 2007. [cited 2019 Apr 20]. Available from: http://researchbank.rmit.edu.au/view/rmit:6699.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hubbard P. Characterisation of a commercial active screen plasma nitriding system. [Thesis]. RMIT University; 2007. Available from: http://researchbank.rmit.edu.au/view/rmit:6699

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

23. CHENG, YU-JUNG. Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations.

Degree: Master, Physics, 2016, NSYSU

 In this research, we grow m-plane gallium nitride on sapphire substrate using molecular beam epitaxy system, then using metal-organic chemical vapor deposition (MOCVD) to grow… (more)

Subjects/Keywords: III-V Nitrides; Molecular Beam Epitaxy (MBE); Nonpolar; Manganese; Raman spectroscopy

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APA (6th Edition):

CHENG, Y. (2016). Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

CHENG, YU-JUNG. “Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations.” 2016. Thesis, NSYSU. Accessed April 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

CHENG, YU-JUNG. “Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations.” 2016. Web. 20 Apr 2019.

Vancouver:

CHENG Y. Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Apr 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

CHENG Y. Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

24. Liu, Chao. Monolithic integration of III-nitride devices by selective epitaxial growth.

Degree: 2016, Hong Kong University of Science and Technology

 Recent decades have witnessed a booming development of III-nitride optoelectronic devices where a direct tunable bandgap is essential for efficient light emission in the green… (more)

Subjects/Keywords: Nitrides; Light emitting diodes; Materials; Optoelectronic devices; Epitaxy

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APA (6th Edition):

Liu, C. (2016). Monolithic integration of III-nitride devices by selective epitaxial growth. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1626116 ; http://repository.ust.hk/ir/bitstream/1783.1-86944/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Chao. “Monolithic integration of III-nitride devices by selective epitaxial growth.” 2016. Thesis, Hong Kong University of Science and Technology. Accessed April 20, 2019. https://doi.org/10.14711/thesis-b1626116 ; http://repository.ust.hk/ir/bitstream/1783.1-86944/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Chao. “Monolithic integration of III-nitride devices by selective epitaxial growth.” 2016. Web. 20 Apr 2019.

Vancouver:

Liu C. Monolithic integration of III-nitride devices by selective epitaxial growth. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2016. [cited 2019 Apr 20]. Available from: https://doi.org/10.14711/thesis-b1626116 ; http://repository.ust.hk/ir/bitstream/1783.1-86944/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu C. Monolithic integration of III-nitride devices by selective epitaxial growth. [Thesis]. Hong Kong University of Science and Technology; 2016. Available from: https://doi.org/10.14711/thesis-b1626116 ; http://repository.ust.hk/ir/bitstream/1783.1-86944/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

25. Herle, P Subramanya. Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides.

Degree: 1998, Indian Institute of Science

Subjects/Keywords: Transition Metal Nitrides - Synthesis; Transition Metal Nitrides - Chemical Structure; Nitrides - Synthesis; Oxynitride; Ba3W2O6N2; Ternary Nitrides; Fe3N; Inorganic Chemistry

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APA (6th Edition):

Herle, P. S. (1998). Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/handle/2005/2185 ; http://etd.ncsi.iisc.ernet.in/abstracts/2793/G15138-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Herle, P Subramanya. “Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides.” 1998. Thesis, Indian Institute of Science. Accessed April 20, 2019. http://etd.iisc.ernet.in/handle/2005/2185 ; http://etd.ncsi.iisc.ernet.in/abstracts/2793/G15138-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Herle, P Subramanya. “Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides.” 1998. Web. 20 Apr 2019.

Vancouver:

Herle PS. Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides. [Internet] [Thesis]. Indian Institute of Science; 1998. [cited 2019 Apr 20]. Available from: http://etd.iisc.ernet.in/handle/2005/2185 ; http://etd.ncsi.iisc.ernet.in/abstracts/2793/G15138-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Herle PS. Synthesis, Structure And Properties Of Some Novel Binary And Ternary Transition Metal Nitrides. [Thesis]. Indian Institute of Science; 1998. Available from: http://etd.iisc.ernet.in/handle/2005/2185 ; http://etd.ncsi.iisc.ernet.in/abstracts/2793/G15138-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université Paris-Sud – Paris XI

26. Sakr, Salam. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz.

Degree: Docteur es, Physique, 2012, Université Paris-Sud – Paris XI

Les dispositifs intersousbandes à base de nitrures d’éléments III ont des propriétés très intéressantes pour l’optoélectronique et la photonique dans l’infrarouge. Les hétérostructures formées par… (more)

Subjects/Keywords: Nitrures d’éléments III; Intersousbandes; Infrarouge; III-nitrides; Intersubband; Infrared

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Sakr, S. (2012). Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2012PA112207

Chicago Manual of Style (16th Edition):

Sakr, Salam. “Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz.” 2012. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed April 20, 2019. http://www.theses.fr/2012PA112207.

MLA Handbook (7th Edition):

Sakr, Salam. “Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz.” 2012. Web. 20 Apr 2019.

Vancouver:

Sakr S. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2012. [cited 2019 Apr 20]. Available from: http://www.theses.fr/2012PA112207.

Council of Science Editors:

Sakr S. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2012. Available from: http://www.theses.fr/2012PA112207


Lehigh University

27. Zeng, Guosong. Investigation of Wear Mechanism of Gallium Nitride.

Degree: PhD, Mechanical Engineering, 2018, Lehigh University

 The optoelectronic properties of gallium nitride (GaN) has been extensively studied for decades, which has facilitated its application in many different areas, cementing it as… (more)

Subjects/Keywords: Band Bending; III-Nitrides; Materials Tribology; Surface Chemistry; Mechanical Engineering

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APA (6th Edition):

Zeng, G. (2018). Investigation of Wear Mechanism of Gallium Nitride. (Doctoral Dissertation). Lehigh University. Retrieved from https://preserve.lehigh.edu/etd/2995

Chicago Manual of Style (16th Edition):

Zeng, Guosong. “Investigation of Wear Mechanism of Gallium Nitride.” 2018. Doctoral Dissertation, Lehigh University. Accessed April 20, 2019. https://preserve.lehigh.edu/etd/2995.

MLA Handbook (7th Edition):

Zeng, Guosong. “Investigation of Wear Mechanism of Gallium Nitride.” 2018. Web. 20 Apr 2019.

Vancouver:

Zeng G. Investigation of Wear Mechanism of Gallium Nitride. [Internet] [Doctoral dissertation]. Lehigh University; 2018. [cited 2019 Apr 20]. Available from: https://preserve.lehigh.edu/etd/2995.

Council of Science Editors:

Zeng G. Investigation of Wear Mechanism of Gallium Nitride. [Doctoral Dissertation]. Lehigh University; 2018. Available from: https://preserve.lehigh.edu/etd/2995


Kansas State University

28. Pantha, Bed Nidhi. Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation.

Degree: PhD, Department of Physics, 2009, Kansas State University

 III-nitride nanostructures and devices were synthesized by metal organic chemical vapor deposition (MOCVD) for their applications in various photonic, optoelectronic, and energy devices such as… (more)

Subjects/Keywords: III-nitrides; MOCVD; Thermoelectric; InGaN; Dislocation; XRD; Physics, Condensed Matter (0611)

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APA (6th Edition):

Pantha, B. N. (2009). Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation. (Doctoral Dissertation). Kansas State University. Retrieved from http://hdl.handle.net/2097/2199

Chicago Manual of Style (16th Edition):

Pantha, Bed Nidhi. “Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation.” 2009. Doctoral Dissertation, Kansas State University. Accessed April 20, 2019. http://hdl.handle.net/2097/2199.

MLA Handbook (7th Edition):

Pantha, Bed Nidhi. “Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation.” 2009. Web. 20 Apr 2019.

Vancouver:

Pantha BN. Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation. [Internet] [Doctoral dissertation]. Kansas State University; 2009. [cited 2019 Apr 20]. Available from: http://hdl.handle.net/2097/2199.

Council of Science Editors:

Pantha BN. Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation. [Doctoral Dissertation]. Kansas State University; 2009. Available from: http://hdl.handle.net/2097/2199


Georgia Tech

29. Li, Xin. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The context of this thesis falls in the wide applications of UV light sources such as sterilization and purification. On the material aspect, III-nitrides (BAlGaInN)… (more)

Subjects/Keywords: VCSEL; Distributed Bragg reflector; Deep UV; MOVPE; III nitrides

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APA (6th Edition):

Li, X. (2016). BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55561

Chicago Manual of Style (16th Edition):

Li, Xin. “BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2016. Doctoral Dissertation, Georgia Tech. Accessed April 20, 2019. http://hdl.handle.net/1853/55561.

MLA Handbook (7th Edition):

Li, Xin. “BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2016. Web. 20 Apr 2019.

Vancouver:

Li X. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Apr 20]. Available from: http://hdl.handle.net/1853/55561.

Council of Science Editors:

Li X. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55561


University College Cork

30. Caro Bayo, Miguel Ángel. Theory of elasticity and electric polarization effects in the group-III nitrides.

Degree: 2013, University College Cork

 In this work, the properties of strained tetrahedrally bonded materials are explored theoretically, with special focus on group-III nitrides. In order to do so, a… (more)

Subjects/Keywords: AlN; DFT; GaN; InN; Elasticity; Polarization; Piezoelectricity; Strain; Semiconductors; Nitrides

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Caro Bayo, M. . (2013). Theory of elasticity and electric polarization effects in the group-III nitrides. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/1344

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Caro Bayo, Miguel Ángel. “Theory of elasticity and electric polarization effects in the group-III nitrides.” 2013. Thesis, University College Cork. Accessed April 20, 2019. http://hdl.handle.net/10468/1344.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Caro Bayo, Miguel Ángel. “Theory of elasticity and electric polarization effects in the group-III nitrides.” 2013. Web. 20 Apr 2019.

Vancouver:

Caro Bayo M. Theory of elasticity and electric polarization effects in the group-III nitrides. [Internet] [Thesis]. University College Cork; 2013. [cited 2019 Apr 20]. Available from: http://hdl.handle.net/10468/1344.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Caro Bayo M. Theory of elasticity and electric polarization effects in the group-III nitrides. [Thesis]. University College Cork; 2013. Available from: http://hdl.handle.net/10468/1344

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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