Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for subject:(Nitrides semiconductor). Showing records 1 – 21 of 21 total matches.

Search Limiters

Last 2 Years | English Only

No search limiters apply to these results.

▼ Search Limiters


University of Manchester

1. Christian, George. Photoluminescence Studies of InGaN/GaN Quantum Well Structures.

Degree: 2018, University of Manchester

 In this thesis, optical studies of c-plane InGaN/GaN quantum well (QW) structures are presented. The effects of a Si-doped underlayer (UL) on the optical properties… (more)

Subjects/Keywords: photoluminescence; gallium nitride; nitrides; quantum well; semiconductor

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Christian, G. (2018). Photoluminescence Studies of InGaN/GaN Quantum Well Structures. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549

Chicago Manual of Style (16th Edition):

Christian, George. “Photoluminescence Studies of InGaN/GaN Quantum Well Structures.” 2018. Doctoral Dissertation, University of Manchester. Accessed July 24, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549.

MLA Handbook (7th Edition):

Christian, George. “Photoluminescence Studies of InGaN/GaN Quantum Well Structures.” 2018. Web. 24 Jul 2019.

Vancouver:

Christian G. Photoluminescence Studies of InGaN/GaN Quantum Well Structures. [Internet] [Doctoral dissertation]. University of Manchester; 2018. [cited 2019 Jul 24]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549.

Council of Science Editors:

Christian G. Photoluminescence Studies of InGaN/GaN Quantum Well Structures. [Doctoral Dissertation]. University of Manchester; 2018. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549


University of Manchester

2. Christian, George. Photoluminescence studies of InGaN/GaN quantum well structures.

Degree: PhD, 2018, University of Manchester

 In this thesis, optical studies of c-plane InGaN/GaN quantum well (QW) structures are presented. The effects of a Si-doped underlayer (UL) on the optical properties… (more)

Subjects/Keywords: 500; photoluminescence; gallium nitride; nitrides; quantum well; semiconductor

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Christian, G. (2018). Photoluminescence studies of InGaN/GaN quantum well structures. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/photoluminescence-studies-of-ingangan-quantum-well-structures(aa935835-26f3-4b12-8f83-21190ffa7cb9).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.764612

Chicago Manual of Style (16th Edition):

Christian, George. “Photoluminescence studies of InGaN/GaN quantum well structures.” 2018. Doctoral Dissertation, University of Manchester. Accessed July 24, 2019. https://www.research.manchester.ac.uk/portal/en/theses/photoluminescence-studies-of-ingangan-quantum-well-structures(aa935835-26f3-4b12-8f83-21190ffa7cb9).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.764612.

MLA Handbook (7th Edition):

Christian, George. “Photoluminescence studies of InGaN/GaN quantum well structures.” 2018. Web. 24 Jul 2019.

Vancouver:

Christian G. Photoluminescence studies of InGaN/GaN quantum well structures. [Internet] [Doctoral dissertation]. University of Manchester; 2018. [cited 2019 Jul 24]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/photoluminescence-studies-of-ingangan-quantum-well-structures(aa935835-26f3-4b12-8f83-21190ffa7cb9).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.764612.

Council of Science Editors:

Christian G. Photoluminescence studies of InGaN/GaN quantum well structures. [Doctoral Dissertation]. University of Manchester; 2018. Available from: https://www.research.manchester.ac.uk/portal/en/theses/photoluminescence-studies-of-ingangan-quantum-well-structures(aa935835-26f3-4b12-8f83-21190ffa7cb9).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.764612

3. Alshehri, Bandar. Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides : Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devices.

Degree: Docteur es, Électronique. Micro et nano technologie, 2016, Valenciennes

Les matériaux semi-conducteurs à base de nitrures disposant de largeur de bande interdite allant de 0,7 à 6 eV, connaissent un intérêt sans cesse croissant… (more)

Subjects/Keywords: Nitrures semiconducteurs; Photodiodes; Conception et fabrication; Nitrides semiconductor; Photodiode; Design and fabrication

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Alshehri, B. (2016). Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides : Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devices. (Doctoral Dissertation). Valenciennes. Retrieved from http://www.theses.fr/2016VALE0022

Chicago Manual of Style (16th Edition):

Alshehri, Bandar. “Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides : Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devices.” 2016. Doctoral Dissertation, Valenciennes. Accessed July 24, 2019. http://www.theses.fr/2016VALE0022.

MLA Handbook (7th Edition):

Alshehri, Bandar. “Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides : Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devices.” 2016. Web. 24 Jul 2019.

Vancouver:

Alshehri B. Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides : Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devices. [Internet] [Doctoral dissertation]. Valenciennes; 2016. [cited 2019 Jul 24]. Available from: http://www.theses.fr/2016VALE0022.

Council of Science Editors:

Alshehri B. Conception, fabrication et caractérisation de photodiodes à base de nitrures semiconducteurs : application aux composants ultra-rapides : Design, fabrication and characterization of III-nitrides-based photodiodes : application to high-speed devices. [Doctoral Dissertation]. Valenciennes; 2016. Available from: http://www.theses.fr/2016VALE0022


University of Western Australia

4. Fehlberg, Tamara Brooke. Transport characterisation of group Ⅲ-nitride materials with dominating surface effects.

Degree: PhD, 2009, University of Western Australia

[Truncated abstract] Group III-nitride (InN, GaN, AlN) electronics have many important and wide ranging applications, such as high power and high frequency transistors for satellite… (more)

Subjects/Keywords: Nitrides; Semiconductors; Semiconductors; Gallium nitride; Microelectronics; Modulation-doped field-effect transistors; Gallium nitride; Semiconductor transport; Indium nitride; Microelectronics; Semiconductor characterisation

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fehlberg, T. B. (2009). Transport characterisation of group Ⅲ-nitride materials with dominating surface effects. (Doctoral Dissertation). University of Western Australia. Retrieved from http://repository.uwa.edu.au:80/R/?func=dbin-jump-full&object_id=13152&local_base=GEN01-INS01

Chicago Manual of Style (16th Edition):

Fehlberg, Tamara Brooke. “Transport characterisation of group Ⅲ-nitride materials with dominating surface effects.” 2009. Doctoral Dissertation, University of Western Australia. Accessed July 24, 2019. http://repository.uwa.edu.au:80/R/?func=dbin-jump-full&object_id=13152&local_base=GEN01-INS01.

MLA Handbook (7th Edition):

Fehlberg, Tamara Brooke. “Transport characterisation of group Ⅲ-nitride materials with dominating surface effects.” 2009. Web. 24 Jul 2019.

Vancouver:

Fehlberg TB. Transport characterisation of group Ⅲ-nitride materials with dominating surface effects. [Internet] [Doctoral dissertation]. University of Western Australia; 2009. [cited 2019 Jul 24]. Available from: http://repository.uwa.edu.au:80/R/?func=dbin-jump-full&object_id=13152&local_base=GEN01-INS01.

Council of Science Editors:

Fehlberg TB. Transport characterisation of group Ⅲ-nitride materials with dominating surface effects. [Doctoral Dissertation]. University of Western Australia; 2009. Available from: http://repository.uwa.edu.au:80/R/?func=dbin-jump-full&object_id=13152&local_base=GEN01-INS01


Université de Montréal

5. Brosseau, Colin N. Dynamique de recombinaison dans les puits quantiques InGaN/GaN .

Degree: 2010, Université de Montréal

 Nous étudions la recombinaison radiative des porteurs de charges photogénérés dans les puits quantiques InGaN/GaN étroits (2 nm). Nous caractérisons le comportement de la photoluminescence… (more)

Subjects/Keywords: InGaN; Photoluminescence; Puits quantique; Nitrures; Semiconducteur; Dynamique temporelle; InGaN; Photoluminescence; Quantum well; Nitrides; Semiconductor; Time dynamics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Brosseau, C. N. (2010). Dynamique de recombinaison dans les puits quantiques InGaN/GaN . (Thesis). Université de Montréal. Retrieved from http://hdl.handle.net/1866/3934

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Brosseau, Colin N. “Dynamique de recombinaison dans les puits quantiques InGaN/GaN .” 2010. Thesis, Université de Montréal. Accessed July 24, 2019. http://hdl.handle.net/1866/3934.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Brosseau, Colin N. “Dynamique de recombinaison dans les puits quantiques InGaN/GaN .” 2010. Web. 24 Jul 2019.

Vancouver:

Brosseau CN. Dynamique de recombinaison dans les puits quantiques InGaN/GaN . [Internet] [Thesis]. Université de Montréal; 2010. [cited 2019 Jul 24]. Available from: http://hdl.handle.net/1866/3934.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Brosseau CN. Dynamique de recombinaison dans les puits quantiques InGaN/GaN . [Thesis]. Université de Montréal; 2010. Available from: http://hdl.handle.net/1866/3934

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

6. Choi, Sukwon. Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods.

Degree: PhD, Mechanical Engineering, 2013, Georgia Tech

 The development of state-of-the-art AlGaN/GaN high electron mobility transistors (HEMTs) has shown much promise for advancing future RF and microwave communication systems. These revolutionary devices… (more)

Subjects/Keywords: Gallium nitride; HEMTs; Photoluminescence; Raman scattering; Semiconductor device reliability; Temperature measurement; Semiconductors; Gallium compounds; Nitrides; Raman effect

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Choi, S. (2013). Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/49108

Chicago Manual of Style (16th Edition):

Choi, Sukwon. “Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods.” 2013. Doctoral Dissertation, Georgia Tech. Accessed July 24, 2019. http://hdl.handle.net/1853/49108.

MLA Handbook (7th Edition):

Choi, Sukwon. “Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods.” 2013. Web. 24 Jul 2019.

Vancouver:

Choi S. Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2019 Jul 24]. Available from: http://hdl.handle.net/1853/49108.

Council of Science Editors:

Choi S. Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/49108

7. Pal, Joydeep. Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices.

Degree: PhD, 2013, University of Manchester

 Materials have always had a large impact on society over the different ages. Piezoelectric materials are the often ‘invisible’ materials which find widespread use, unknown… (more)

Subjects/Keywords: 537; Piezoelectricity; Piezotronics; III-Nitrides; Semiconductor Devices

…piezoelectricity on the excitonic properties of III-N semiconductor quantum dots”, IEEE Conf. Proceedings… …Exploiting Linear and Non linear Piezoelectricity in Novel Semiconductor Devices”, at Materials… …quantum dots”, International Symposium on Semiconductor Light Emitting Diodes ISSLED 2012… …of the Gr-III-Nitrides Quantum Dots", UK Semiconductors 2011, Sheffield, UK.  J… …III-N Semiconductor Quantum Dot”, Numerical Simu-lation of Optoelectronic Devices (… 

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pal, J. (2013). Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/exploiting-non-linear-piezoelectricity-in-novel-semiconductor-based-electronic-devices(9e358fe5-637d-4106-834b-3b2ae40a8a7a).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607006

Chicago Manual of Style (16th Edition):

Pal, Joydeep. “Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices.” 2013. Doctoral Dissertation, University of Manchester. Accessed July 24, 2019. https://www.research.manchester.ac.uk/portal/en/theses/exploiting-non-linear-piezoelectricity-in-novel-semiconductor-based-electronic-devices(9e358fe5-637d-4106-834b-3b2ae40a8a7a).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607006.

MLA Handbook (7th Edition):

Pal, Joydeep. “Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices.” 2013. Web. 24 Jul 2019.

Vancouver:

Pal J. Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices. [Internet] [Doctoral dissertation]. University of Manchester; 2013. [cited 2019 Jul 24]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/exploiting-non-linear-piezoelectricity-in-novel-semiconductor-based-electronic-devices(9e358fe5-637d-4106-834b-3b2ae40a8a7a).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607006.

Council of Science Editors:

Pal J. Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices. [Doctoral Dissertation]. University of Manchester; 2013. Available from: https://www.research.manchester.ac.uk/portal/en/theses/exploiting-non-linear-piezoelectricity-in-novel-semiconductor-based-electronic-devices(9e358fe5-637d-4106-834b-3b2ae40a8a7a).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607006

8. Pal, Joydeep. Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices.

Degree: 2013, University of Manchester

 Materials have always had a large impact on society over the different ages. Piezoelectric materials are the often ‘invisible’ materials which find widespread use, unknown… (more)

Subjects/Keywords: Piezoelectricity; Piezotronics; III-Nitrides; Semiconductor Devices

…piezoelectricity on the excitonic properties of III-N semiconductor quantum dots”, IEEE Conf. Proceedings… …Exploiting Linear and Non linear Piezoelectricity in Novel Semiconductor Devices”, at Materials… …quantum dots”, International Symposium on Semiconductor Light Emitting Diodes ISSLED 2012… …of the Gr-III-Nitrides Quantum Dots", UK Semiconductors 2011, Sheffield, UK.  J… …III-N Semiconductor Quantum Dot”, Numerical Simu-lation of Optoelectronic Devices (… 

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pal, J. (2013). Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:211274

Chicago Manual of Style (16th Edition):

Pal, Joydeep. “Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices.” 2013. Doctoral Dissertation, University of Manchester. Accessed July 24, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:211274.

MLA Handbook (7th Edition):

Pal, Joydeep. “Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices.” 2013. Web. 24 Jul 2019.

Vancouver:

Pal J. Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices. [Internet] [Doctoral dissertation]. University of Manchester; 2013. [cited 2019 Jul 24]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:211274.

Council of Science Editors:

Pal J. Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices. [Doctoral Dissertation]. University of Manchester; 2013. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:211274


University of Florida

9. Oh, Myoung. Novel Synthesis Methods for Preparation of Ceria Abrasives for Chemical Mechanical Planarization Applications in Semiconductor Processing.

Degree: PhD, Materials Science and Engineering, 2010, University of Florida

 As the device design rule decreased, ceria-based slurries have been widely used instead of silica-based slurries in a variety of chemical mechanical planarization (CMP) applications… (more)

Subjects/Keywords: Cerium; Nitrides; Oxides; Particle size classes; Particle size distribution; pH; Polishing; Silicon; Slurries; Solvents; abrasive, ceria, cmp, semiconductor, slurry

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Oh, M. (2010). Novel Synthesis Methods for Preparation of Ceria Abrasives for Chemical Mechanical Planarization Applications in Semiconductor Processing. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0042340

Chicago Manual of Style (16th Edition):

Oh, Myoung. “Novel Synthesis Methods for Preparation of Ceria Abrasives for Chemical Mechanical Planarization Applications in Semiconductor Processing.” 2010. Doctoral Dissertation, University of Florida. Accessed July 24, 2019. http://ufdc.ufl.edu/UFE0042340.

MLA Handbook (7th Edition):

Oh, Myoung. “Novel Synthesis Methods for Preparation of Ceria Abrasives for Chemical Mechanical Planarization Applications in Semiconductor Processing.” 2010. Web. 24 Jul 2019.

Vancouver:

Oh M. Novel Synthesis Methods for Preparation of Ceria Abrasives for Chemical Mechanical Planarization Applications in Semiconductor Processing. [Internet] [Doctoral dissertation]. University of Florida; 2010. [cited 2019 Jul 24]. Available from: http://ufdc.ufl.edu/UFE0042340.

Council of Science Editors:

Oh M. Novel Synthesis Methods for Preparation of Ceria Abrasives for Chemical Mechanical Planarization Applications in Semiconductor Processing. [Doctoral Dissertation]. University of Florida; 2010. Available from: http://ufdc.ufl.edu/UFE0042340


University of Surrey

10. Pearson, Gary S. Strain Green's functions for buried quantum dots.

Degree: PhD, 2001, University of Surrey

Subjects/Keywords: 530.41; STRAINS; ELASTICITY; GREEN FUNCTION; NITRIDES; PIEZOELECTRICITY; MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pearson, G. S. (2001). Strain Green's functions for buried quantum dots. (Doctoral Dissertation). University of Surrey. Retrieved from http://epubs.surrey.ac.uk/2385/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341377

Chicago Manual of Style (16th Edition):

Pearson, Gary S. “Strain Green's functions for buried quantum dots.” 2001. Doctoral Dissertation, University of Surrey. Accessed July 24, 2019. http://epubs.surrey.ac.uk/2385/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341377.

MLA Handbook (7th Edition):

Pearson, Gary S. “Strain Green's functions for buried quantum dots.” 2001. Web. 24 Jul 2019.

Vancouver:

Pearson GS. Strain Green's functions for buried quantum dots. [Internet] [Doctoral dissertation]. University of Surrey; 2001. [cited 2019 Jul 24]. Available from: http://epubs.surrey.ac.uk/2385/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341377.

Council of Science Editors:

Pearson GS. Strain Green's functions for buried quantum dots. [Doctoral Dissertation]. University of Surrey; 2001. Available from: http://epubs.surrey.ac.uk/2385/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341377


University of Florida

11. Chen, Zhan, 1973-. Silicon wafer-contaminant interactions in dilute hydrofluoric acid solutions and related fundamentals in colloid and interface science.

Degree: PhD, Materials Science and Engineering, 2000, University of Florida

Subjects/Keywords: Adhesion; Electrolytes; Electrostatics; Ions; Particle interactions; pH; Semiconductor wafers; Silicon; Silicon nitrides; Surfactants

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, Zhan, 1. (2000). Silicon wafer-contaminant interactions in dilute hydrofluoric acid solutions and related fundamentals in colloid and interface science. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/AA00038835

Chicago Manual of Style (16th Edition):

Chen, Zhan, 1973-. “Silicon wafer-contaminant interactions in dilute hydrofluoric acid solutions and related fundamentals in colloid and interface science.” 2000. Doctoral Dissertation, University of Florida. Accessed July 24, 2019. http://ufdc.ufl.edu/AA00038835.

MLA Handbook (7th Edition):

Chen, Zhan, 1973-. “Silicon wafer-contaminant interactions in dilute hydrofluoric acid solutions and related fundamentals in colloid and interface science.” 2000. Web. 24 Jul 2019.

Vancouver:

Chen, Zhan 1. Silicon wafer-contaminant interactions in dilute hydrofluoric acid solutions and related fundamentals in colloid and interface science. [Internet] [Doctoral dissertation]. University of Florida; 2000. [cited 2019 Jul 24]. Available from: http://ufdc.ufl.edu/AA00038835.

Council of Science Editors:

Chen, Zhan 1. Silicon wafer-contaminant interactions in dilute hydrofluoric acid solutions and related fundamentals in colloid and interface science. [Doctoral Dissertation]. University of Florida; 2000. Available from: http://ufdc.ufl.edu/AA00038835


Université de Grenoble

12. Leclere, Cédric. Spectroscopies X et diffraction anomale de boîtes quantiques GaN et d'hétéro-structure III-N : inter-diffusion et ordre à courte distance : X-rays spectroscopies and anomalous diffraction of GaN quantum dots and III-N hetero-structures : inter-diffusion and short range order.

Degree: Docteur es, Matériaux, mécanique, génie civil, électrochimie, 2013, Université de Grenoble

Le travail illustré par ce manuscrit de thèse présente l'étude structurale d'hétéro-structures semi-conductrices à base de nitrures d'éléments III avec l'un des outils les plus… (more)

Subjects/Keywords: Structures fines de diffraction anomale; Diffraction anomale à plusieurs longueurs d'onde; Spectroscopies d'absorption X; Diffraction X résonante; Hétérostructures de nitrures semiconductrices; Nanofils coeur-coquille; Diffraction anomalous fine ftructure; Multiwavelenght anomalous diffraction; X-Ray absorption spectroscopies; Resonant X-Ray diffraction; Nitrides semiconductor hétérostructures; Core-Shell nanowires; 620

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Leclere, C. (2013). Spectroscopies X et diffraction anomale de boîtes quantiques GaN et d'hétéro-structure III-N : inter-diffusion et ordre à courte distance : X-rays spectroscopies and anomalous diffraction of GaN quantum dots and III-N hetero-structures : inter-diffusion and short range order. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2013GRENI092

Chicago Manual of Style (16th Edition):

Leclere, Cédric. “Spectroscopies X et diffraction anomale de boîtes quantiques GaN et d'hétéro-structure III-N : inter-diffusion et ordre à courte distance : X-rays spectroscopies and anomalous diffraction of GaN quantum dots and III-N hetero-structures : inter-diffusion and short range order.” 2013. Doctoral Dissertation, Université de Grenoble. Accessed July 24, 2019. http://www.theses.fr/2013GRENI092.

MLA Handbook (7th Edition):

Leclere, Cédric. “Spectroscopies X et diffraction anomale de boîtes quantiques GaN et d'hétéro-structure III-N : inter-diffusion et ordre à courte distance : X-rays spectroscopies and anomalous diffraction of GaN quantum dots and III-N hetero-structures : inter-diffusion and short range order.” 2013. Web. 24 Jul 2019.

Vancouver:

Leclere C. Spectroscopies X et diffraction anomale de boîtes quantiques GaN et d'hétéro-structure III-N : inter-diffusion et ordre à courte distance : X-rays spectroscopies and anomalous diffraction of GaN quantum dots and III-N hetero-structures : inter-diffusion and short range order. [Internet] [Doctoral dissertation]. Université de Grenoble; 2013. [cited 2019 Jul 24]. Available from: http://www.theses.fr/2013GRENI092.

Council of Science Editors:

Leclere C. Spectroscopies X et diffraction anomale de boîtes quantiques GaN et d'hétéro-structure III-N : inter-diffusion et ordre à courte distance : X-rays spectroscopies and anomalous diffraction of GaN quantum dots and III-N hetero-structures : inter-diffusion and short range order. [Doctoral Dissertation]. Université de Grenoble; 2013. Available from: http://www.theses.fr/2013GRENI092


University of Florida

13. Avci, Ibrahim, 1969-. Loop nucleation and stress effects in ion-implanted silicon.

Degree: PhD, Electrical and Computer Engineering, 2002, University of Florida

Subjects/Keywords: Annealing; Boron; Dosage; Modeling; Nitrides; Nucleation; Point defects; Silicon; Simulations; Stripes; Ion implantation; Semiconductor doping; Semiconductors  – Defects

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Avci, Ibrahim, 1. (2002). Loop nucleation and stress effects in ion-implanted silicon. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/AA00013536

Chicago Manual of Style (16th Edition):

Avci, Ibrahim, 1969-. “Loop nucleation and stress effects in ion-implanted silicon.” 2002. Doctoral Dissertation, University of Florida. Accessed July 24, 2019. http://ufdc.ufl.edu/AA00013536.

MLA Handbook (7th Edition):

Avci, Ibrahim, 1969-. “Loop nucleation and stress effects in ion-implanted silicon.” 2002. Web. 24 Jul 2019.

Vancouver:

Avci, Ibrahim 1. Loop nucleation and stress effects in ion-implanted silicon. [Internet] [Doctoral dissertation]. University of Florida; 2002. [cited 2019 Jul 24]. Available from: http://ufdc.ufl.edu/AA00013536.

Council of Science Editors:

Avci, Ibrahim 1. Loop nucleation and stress effects in ion-implanted silicon. [Doctoral Dissertation]. University of Florida; 2002. Available from: http://ufdc.ufl.edu/AA00013536


University of Surrey

14. Morgan, B. A. Current transport in hydrogenated amorphous silicon nitride.

Degree: PhD, 2000, University of Surrey

 A defect band is formed in hydrogenated amorphous silicon nitride (a-SiNx:H) due to current stressing of the material. This gives rise to an increase in… (more)

Subjects/Keywords: 530.41; SILICON NITRIDES; THIN FILMS; FRENKEL DEFECTS; HOLE MOBILITY; HOLES; CHARGE CARRIERS; SEMICONDUCTOR MATERIALS

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Morgan, B. A. (2000). Current transport in hydrogenated amorphous silicon nitride. (Doctoral Dissertation). University of Surrey. Retrieved from http://epubs.surrey.ac.uk/842874/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326738

Chicago Manual of Style (16th Edition):

Morgan, B A. “Current transport in hydrogenated amorphous silicon nitride.” 2000. Doctoral Dissertation, University of Surrey. Accessed July 24, 2019. http://epubs.surrey.ac.uk/842874/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326738.

MLA Handbook (7th Edition):

Morgan, B A. “Current transport in hydrogenated amorphous silicon nitride.” 2000. Web. 24 Jul 2019.

Vancouver:

Morgan BA. Current transport in hydrogenated amorphous silicon nitride. [Internet] [Doctoral dissertation]. University of Surrey; 2000. [cited 2019 Jul 24]. Available from: http://epubs.surrey.ac.uk/842874/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326738.

Council of Science Editors:

Morgan BA. Current transport in hydrogenated amorphous silicon nitride. [Doctoral Dissertation]. University of Surrey; 2000. Available from: http://epubs.surrey.ac.uk/842874/ ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326738


Arizona State University

15. Wang, Shuo. Microstructure of BAlN and InGaN Epilayers for Optoelectronic Applications.

Degree: Physics, 2018, Arizona State University

Subjects/Keywords: Materials Science; Physics; Applied physics; Characterization; Crystal structure; Nitrides; Optoelectronics; Semiconductor; Transmission electron microscopy

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, S. (2018). Microstructure of BAlN and InGaN Epilayers for Optoelectronic Applications. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/50441

Chicago Manual of Style (16th Edition):

Wang, Shuo. “Microstructure of BAlN and InGaN Epilayers for Optoelectronic Applications.” 2018. Doctoral Dissertation, Arizona State University. Accessed July 24, 2019. http://repository.asu.edu/items/50441.

MLA Handbook (7th Edition):

Wang, Shuo. “Microstructure of BAlN and InGaN Epilayers for Optoelectronic Applications.” 2018. Web. 24 Jul 2019.

Vancouver:

Wang S. Microstructure of BAlN and InGaN Epilayers for Optoelectronic Applications. [Internet] [Doctoral dissertation]. Arizona State University; 2018. [cited 2019 Jul 24]. Available from: http://repository.asu.edu/items/50441.

Council of Science Editors:

Wang S. Microstructure of BAlN and InGaN Epilayers for Optoelectronic Applications. [Doctoral Dissertation]. Arizona State University; 2018. Available from: http://repository.asu.edu/items/50441


Indian Institute of Science

16. Sardar, Kripasindhu. Nanostructures And Thin Films Of III-V Nitride Semiconductors.

Degree: 2005, Indian Institute of Science

Subjects/Keywords: Semiconductors; Thin Films; Nanostructures; Nitrides; Nitride Semiconductors; Nanowires; Nanocrystals; Semiconductor Nanostructures; AlN; GaN; InN; Gallium Nitride; Nanotubes; Nitnde Thin Films; GaMnN Films; Nanotechnology

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Sardar, K. (2005). Nanostructures And Thin Films Of III-V Nitride Semiconductors. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/1392

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sardar, Kripasindhu. “Nanostructures And Thin Films Of III-V Nitride Semiconductors.” 2005. Thesis, Indian Institute of Science. Accessed July 24, 2019. http://hdl.handle.net/2005/1392.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sardar, Kripasindhu. “Nanostructures And Thin Films Of III-V Nitride Semiconductors.” 2005. Web. 24 Jul 2019.

Vancouver:

Sardar K. Nanostructures And Thin Films Of III-V Nitride Semiconductors. [Internet] [Thesis]. Indian Institute of Science; 2005. [cited 2019 Jul 24]. Available from: http://hdl.handle.net/2005/1392.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sardar K. Nanostructures And Thin Films Of III-V Nitride Semiconductors. [Thesis]. Indian Institute of Science; 2005. Available from: http://hdl.handle.net/2005/1392

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

17. Sardar, Kripasindhu. Nanostructures And Thin Films Of III-V Nitride Semiconductors.

Degree: 2005, Indian Institute of Science

Subjects/Keywords: Semiconductors; Thin Films; Nanostructures; Nitrides; Nitride Semiconductors; Nanowires; Nanocrystals; Semiconductor Nanostructures; AlN; GaN; InN; Gallium Nitride; Nanotubes; Nitnde Thin Films; GaMnN Films; Nanotechnology

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Sardar, K. (2005). Nanostructures And Thin Films Of III-V Nitride Semiconductors. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/handle/2005/1392 ; http://etd.ncsi.iisc.ernet.in/abstracts/1800/G18971-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sardar, Kripasindhu. “Nanostructures And Thin Films Of III-V Nitride Semiconductors.” 2005. Thesis, Indian Institute of Science. Accessed July 24, 2019. http://etd.iisc.ernet.in/handle/2005/1392 ; http://etd.ncsi.iisc.ernet.in/abstracts/1800/G18971-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sardar, Kripasindhu. “Nanostructures And Thin Films Of III-V Nitride Semiconductors.” 2005. Web. 24 Jul 2019.

Vancouver:

Sardar K. Nanostructures And Thin Films Of III-V Nitride Semiconductors. [Internet] [Thesis]. Indian Institute of Science; 2005. [cited 2019 Jul 24]. Available from: http://etd.iisc.ernet.in/handle/2005/1392 ; http://etd.ncsi.iisc.ernet.in/abstracts/1800/G18971-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sardar K. Nanostructures And Thin Films Of III-V Nitride Semiconductors. [Thesis]. Indian Institute of Science; 2005. Available from: http://etd.iisc.ernet.in/handle/2005/1392 ; http://etd.ncsi.iisc.ernet.in/abstracts/1800/G18971-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

18. Voss, Lars Fredrik. Thermally Stable Ohmic and Schottky Contacts to GaN.

Degree: PhD, Materials Science and Engineering, 2008, University of Florida

 Thermally stable Ohmic and Schottky contacts to GaN by Lars Voss, Materials Science and Engineering, University of Florida, Gainesville, FL. A study of Ohmic and… (more)

Subjects/Keywords: Annealing; Borides; Contact resistance; Electric potential; Electrons; High temperature; Nitrides; Surface temperature; Temperature profiles; Temperature resistance; contacts, gan, high, led, ohmic, schottky, semiconductor, stable

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Voss, L. F. (2008). Thermally Stable Ohmic and Schottky Contacts to GaN. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0021980

Chicago Manual of Style (16th Edition):

Voss, Lars Fredrik. “Thermally Stable Ohmic and Schottky Contacts to GaN.” 2008. Doctoral Dissertation, University of Florida. Accessed July 24, 2019. http://ufdc.ufl.edu/UFE0021980.

MLA Handbook (7th Edition):

Voss, Lars Fredrik. “Thermally Stable Ohmic and Schottky Contacts to GaN.” 2008. Web. 24 Jul 2019.

Vancouver:

Voss LF. Thermally Stable Ohmic and Schottky Contacts to GaN. [Internet] [Doctoral dissertation]. University of Florida; 2008. [cited 2019 Jul 24]. Available from: http://ufdc.ufl.edu/UFE0021980.

Council of Science Editors:

Voss LF. Thermally Stable Ohmic and Schottky Contacts to GaN. [Doctoral Dissertation]. University of Florida; 2008. Available from: http://ufdc.ufl.edu/UFE0021980


University of Florida

19. Lu, Hsing-Liang, 1951-. Investigation of interface states and failure mechanisms in MNOS devices.

Degree: 1984, University of Florida

Subjects/Keywords: Capacitance; Capacitors; Electric potential; Electrons; Narrative devices; Nitrides; Oxides; Signals; Silicon; Threshold voltage; Computer storage devices; Electrical Engineering thesis Ph. D; Semiconductor storage devices

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lu, Hsing-Liang, 1. (1984). Investigation of interface states and failure mechanisms in MNOS devices. (Thesis). University of Florida. Retrieved from http://ufdc.ufl.edu/AA00047878

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, Hsing-Liang, 1951-. “Investigation of interface states and failure mechanisms in MNOS devices.” 1984. Thesis, University of Florida. Accessed July 24, 2019. http://ufdc.ufl.edu/AA00047878.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, Hsing-Liang, 1951-. “Investigation of interface states and failure mechanisms in MNOS devices.” 1984. Web. 24 Jul 2019.

Vancouver:

Lu, Hsing-Liang 1. Investigation of interface states and failure mechanisms in MNOS devices. [Internet] [Thesis]. University of Florida; 1984. [cited 2019 Jul 24]. Available from: http://ufdc.ufl.edu/AA00047878.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu, Hsing-Liang 1. Investigation of interface states and failure mechanisms in MNOS devices. [Thesis]. University of Florida; 1984. Available from: http://ufdc.ufl.edu/AA00047878

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Venkatachalam, Anusha. Investigation of self-heating and macroscopic built-in polarization effects on the performance of III-V nitride devices.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 The effect of hot phonons and the influence of macroscopic polarization-induced built-in fields on the performance of III-V nitride devices are investigated. Self-heating due to… (more)

Subjects/Keywords: High electron mobility transistors; Nitrides; InGaN-based green lasers; Polarization; Self-heating; Quantum wells; Transition metal nitrides; Semiconductors Materials; Phonons; Modulation-doped field-effect transistors; Semiconductor lasers; Quantum wells

semiconductor single quantum well heterostructure. 10 CHAPTER II OVERVIEW OF III-NITRIDES 2.1… …7 3 4 Schematic of a semiconductor single quantum well heterostructure. . 10 5… …microelectronics and optoelectronics. Chapter II reviews salient material properties of nitrides like… …which details future applications of the research conducted in this thesis. 1.3 Nitrides in… …semiconductor field effect transistors (MOSFETs) have ruled the power semiconductor industry… 

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Venkatachalam, A. (2009). Investigation of self-heating and macroscopic built-in polarization effects on the performance of III-V nitride devices. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/29669

Chicago Manual of Style (16th Edition):

Venkatachalam, Anusha. “Investigation of self-heating and macroscopic built-in polarization effects on the performance of III-V nitride devices.” 2009. Doctoral Dissertation, Georgia Tech. Accessed July 24, 2019. http://hdl.handle.net/1853/29669.

MLA Handbook (7th Edition):

Venkatachalam, Anusha. “Investigation of self-heating and macroscopic built-in polarization effects on the performance of III-V nitride devices.” 2009. Web. 24 Jul 2019.

Vancouver:

Venkatachalam A. Investigation of self-heating and macroscopic built-in polarization effects on the performance of III-V nitride devices. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2019 Jul 24]. Available from: http://hdl.handle.net/1853/29669.

Council of Science Editors:

Venkatachalam A. Investigation of self-heating and macroscopic built-in polarization effects on the performance of III-V nitride devices. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/29669


University of Florida

21. De Almeida, Aloysius Anscrutha Marino, 1947-. Effects of processing variations and endurance stress on the MNOS nonvolatile memory device.

Degree: 1986, University of Florida

Subjects/Keywords: Capacitance; Charge density; Density; Electric fields; Electric potential; Electrons; Flux density; Nitrides; Oxides; Silicon; Computer storage devices; Electrical Engineering thesis Ph. D; Metal insulator semiconductors; Metal oxide semiconductors; Semiconductor storage devices

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

De Almeida, Aloysius Anscrutha Marino, 1. (1986). Effects of processing variations and endurance stress on the MNOS nonvolatile memory device. (Thesis). University of Florida. Retrieved from http://ufdc.ufl.edu/AA00047151

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

De Almeida, Aloysius Anscrutha Marino, 1947-. “Effects of processing variations and endurance stress on the MNOS nonvolatile memory device.” 1986. Thesis, University of Florida. Accessed July 24, 2019. http://ufdc.ufl.edu/AA00047151.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

De Almeida, Aloysius Anscrutha Marino, 1947-. “Effects of processing variations and endurance stress on the MNOS nonvolatile memory device.” 1986. Web. 24 Jul 2019.

Vancouver:

De Almeida, Aloysius Anscrutha Marino 1. Effects of processing variations and endurance stress on the MNOS nonvolatile memory device. [Internet] [Thesis]. University of Florida; 1986. [cited 2019 Jul 24]. Available from: http://ufdc.ufl.edu/AA00047151.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

De Almeida, Aloysius Anscrutha Marino 1. Effects of processing variations and endurance stress on the MNOS nonvolatile memory device. [Thesis]. University of Florida; 1986. Available from: http://ufdc.ufl.edu/AA00047151

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.