Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for subject:(Nitride). Showing records 1 – 30 of 1158 total matches.

[1] [2] [3] [4] [5] … [39]

Search Limiters

Last 2 Years | English Only

Degrees

Levels

Languages

Country

▼ Search Limiters


University of Victoria

1. Alimohammadi, Helaleh. Effect of oxidation on the optical properties of Zn3N2 powders.

Degree: Department of Electrical and Computer Engineering, 2017, University of Victoria

 Zinc nitride is currently attracting research interest because of its potential for novel electronic and photonic properties. In this thesis the optical properties of Zn3N2… (more)

Subjects/Keywords: Zinc nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Alimohammadi, H. (2017). Effect of oxidation on the optical properties of Zn3N2 powders. (Masters Thesis). University of Victoria. Retrieved from https://dspace.library.uvic.ca//handle/1828/8844

Chicago Manual of Style (16th Edition):

Alimohammadi, Helaleh. “Effect of oxidation on the optical properties of Zn3N2 powders.” 2017. Masters Thesis, University of Victoria. Accessed April 22, 2019. https://dspace.library.uvic.ca//handle/1828/8844.

MLA Handbook (7th Edition):

Alimohammadi, Helaleh. “Effect of oxidation on the optical properties of Zn3N2 powders.” 2017. Web. 22 Apr 2019.

Vancouver:

Alimohammadi H. Effect of oxidation on the optical properties of Zn3N2 powders. [Internet] [Masters thesis]. University of Victoria; 2017. [cited 2019 Apr 22]. Available from: https://dspace.library.uvic.ca//handle/1828/8844.

Council of Science Editors:

Alimohammadi H. Effect of oxidation on the optical properties of Zn3N2 powders. [Masters Thesis]. University of Victoria; 2017. Available from: https://dspace.library.uvic.ca//handle/1828/8844


Oregon State University

2. Vas-Umnuay, Paravee. Flow characterization of multiple-tube reactors for synthesis of nano-sized silicon nitride powder via silicon monoxide ammonolysis.

Degree: MS, Chemical Engineering, 2008, Oregon State University

 Concentrically arranged multiple-tube reactors with different dimensions were built for synthesizing nano-sized silicon nitride powder via the ammonolysis of SiO vapor. The reaction was operated… (more)

Subjects/Keywords: nano-sized silicon nitride; Silicon nitride  – Synthesis

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Vas-Umnuay, P. (2008). Flow characterization of multiple-tube reactors for synthesis of nano-sized silicon nitride powder via silicon monoxide ammonolysis. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/9531

Chicago Manual of Style (16th Edition):

Vas-Umnuay, Paravee. “Flow characterization of multiple-tube reactors for synthesis of nano-sized silicon nitride powder via silicon monoxide ammonolysis.” 2008. Masters Thesis, Oregon State University. Accessed April 22, 2019. http://hdl.handle.net/1957/9531.

MLA Handbook (7th Edition):

Vas-Umnuay, Paravee. “Flow characterization of multiple-tube reactors for synthesis of nano-sized silicon nitride powder via silicon monoxide ammonolysis.” 2008. Web. 22 Apr 2019.

Vancouver:

Vas-Umnuay P. Flow characterization of multiple-tube reactors for synthesis of nano-sized silicon nitride powder via silicon monoxide ammonolysis. [Internet] [Masters thesis]. Oregon State University; 2008. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1957/9531.

Council of Science Editors:

Vas-Umnuay P. Flow characterization of multiple-tube reactors for synthesis of nano-sized silicon nitride powder via silicon monoxide ammonolysis. [Masters Thesis]. Oregon State University; 2008. Available from: http://hdl.handle.net/1957/9531


Texas A&M University

3. Castanon, Elizabeth Diane. Nitrogen Ion Bombardment of Fuel Cladding Materials.

Degree: 2016, Texas A&M University

 In a nuclear reactor where there are high stresses, temperatures and radiation levels, a number of material problems can occur including corrosion, thermal fatigue cracking,… (more)

Subjects/Keywords: Fuel Cladding; Nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Castanon, E. D. (2016). Nitrogen Ion Bombardment of Fuel Cladding Materials. (Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/158131

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Castanon, Elizabeth Diane. “Nitrogen Ion Bombardment of Fuel Cladding Materials.” 2016. Thesis, Texas A&M University. Accessed April 22, 2019. http://hdl.handle.net/1969.1/158131.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Castanon, Elizabeth Diane. “Nitrogen Ion Bombardment of Fuel Cladding Materials.” 2016. Web. 22 Apr 2019.

Vancouver:

Castanon ED. Nitrogen Ion Bombardment of Fuel Cladding Materials. [Internet] [Thesis]. Texas A&M University; 2016. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1969.1/158131.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Castanon ED. Nitrogen Ion Bombardment of Fuel Cladding Materials. [Thesis]. Texas A&M University; 2016. Available from: http://hdl.handle.net/1969.1/158131

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

4. Riaz, Ibtsam. Graphene and Boron Nitride: Members of Two Dimensional Material Family.

Degree: 2012, University of Manchester

Name of University: University of ManchesterCandidate full name: Ibtsam RiazDegree Title: Doctor of Philosophy in the Faculty of Engineering and Physical sciencesThesis Title: Graphene and… (more)

Subjects/Keywords: Graphene; Boron Nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Riaz, I. (2012). Graphene and Boron Nitride: Members of Two Dimensional Material Family. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:153124

Chicago Manual of Style (16th Edition):

Riaz, Ibtsam. “Graphene and Boron Nitride: Members of Two Dimensional Material Family.” 2012. Doctoral Dissertation, University of Manchester. Accessed April 22, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:153124.

MLA Handbook (7th Edition):

Riaz, Ibtsam. “Graphene and Boron Nitride: Members of Two Dimensional Material Family.” 2012. Web. 22 Apr 2019.

Vancouver:

Riaz I. Graphene and Boron Nitride: Members of Two Dimensional Material Family. [Internet] [Doctoral dissertation]. University of Manchester; 2012. [cited 2019 Apr 22]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:153124.

Council of Science Editors:

Riaz I. Graphene and Boron Nitride: Members of Two Dimensional Material Family. [Doctoral Dissertation]. University of Manchester; 2012. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:153124


North Carolina State University

5. Barry, Edwin Allen. Terahertz Generation in Submicron Nitride-based Semiconductor Devices.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

 In this thesis, the electron dynamics and transport properties of III-nitride semiconductors materials and devices are studied, with an emphasis on their application to the… (more)

Subjects/Keywords: GaN; nitride; THz

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Barry, E. A. (2009). Terahertz Generation in Submicron Nitride-based Semiconductor Devices. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3566

Chicago Manual of Style (16th Edition):

Barry, Edwin Allen. “Terahertz Generation in Submicron Nitride-based Semiconductor Devices.” 2009. Doctoral Dissertation, North Carolina State University. Accessed April 22, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3566.

MLA Handbook (7th Edition):

Barry, Edwin Allen. “Terahertz Generation in Submicron Nitride-based Semiconductor Devices.” 2009. Web. 22 Apr 2019.

Vancouver:

Barry EA. Terahertz Generation in Submicron Nitride-based Semiconductor Devices. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2019 Apr 22]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3566.

Council of Science Editors:

Barry EA. Terahertz Generation in Submicron Nitride-based Semiconductor Devices. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3566


University of Notre Dame

6. Kevin Goodman. Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>.

Degree: PhD, Electrical Engineering, 2010, University of Notre Dame

  Currently, 21% of the world’s electrical energy is used in artificial lighting. White light LEDs, the holy grail of lighting, are currently the subject(more)

Subjects/Keywords: mbe; nitride; nanowires

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Goodman, K. (2010). Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/wh246q20m66

Chicago Manual of Style (16th Edition):

Goodman, Kevin. “Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>.” 2010. Doctoral Dissertation, University of Notre Dame. Accessed April 22, 2019. https://curate.nd.edu/show/wh246q20m66.

MLA Handbook (7th Edition):

Goodman, Kevin. “Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>.” 2010. Web. 22 Apr 2019.

Vancouver:

Goodman K. Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2010. [cited 2019 Apr 22]. Available from: https://curate.nd.edu/show/wh246q20m66.

Council of Science Editors:

Goodman K. Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>. [Doctoral Dissertation]. University of Notre Dame; 2010. Available from: https://curate.nd.edu/show/wh246q20m66

7. Hautakangas, Sami. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.

Degree: 2005, Helsinki University of Technology

The effects of impurity atoms as well as various growth methods to the formation of vacancy type defects in gallium nitride (GaN) have been studied… (more)

Subjects/Keywords: gallium nitride; positron annihilation; vacancy

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hautakangas, S. (2005). Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2005/isbn9512276674/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hautakangas, Sami. “Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.” 2005. Thesis, Helsinki University of Technology. Accessed April 22, 2019. http://lib.tkk.fi/Diss/2005/isbn9512276674/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hautakangas, Sami. “Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.” 2005. Web. 22 Apr 2019.

Vancouver:

Hautakangas S. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. [Internet] [Thesis]. Helsinki University of Technology; 2005. [cited 2019 Apr 22]. Available from: http://lib.tkk.fi/Diss/2005/isbn9512276674/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hautakangas S. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. [Thesis]. Helsinki University of Technology; 2005. Available from: http://lib.tkk.fi/Diss/2005/isbn9512276674/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

8. Puviarasu P. Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;.

Degree: Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers, 2014, Anna University

Group III nitrides such as Indium Nitride Gallium Nitride and Aluminium Nitride are currently the most challenging and technologically important materials which have the potential… (more)

Subjects/Keywords: Aluminium nitride; Chloride vapour phase epitaxy; Epitaxial techniques; Gallium nitride; Gallium nitride epilayers; Indium nitride; Science and humanities

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

P, P. (2014). Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/24564

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

P, Puviarasu. “Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;.” 2014. Thesis, Anna University. Accessed April 22, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/24564.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

P, Puviarasu. “Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;.” 2014. Web. 22 Apr 2019.

Vancouver:

P P. Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;. [Internet] [Thesis]. Anna University; 2014. [cited 2019 Apr 22]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/24564.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

P P. Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;. [Thesis]. Anna University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/24564

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

9. Goodwin, Stefan. Fabrication and measurement of graphene electrochemical microelectrodes.

Degree: PhD, 2016, University of Manchester

 The electrochemical properties of graphene were investigated using a novel and clean method to fabricate device structures with mechanically exfoliated graphene samples. Graphene is known… (more)

Subjects/Keywords: Graphene; Electrochemistry; Boron nitride; Ultramicroelectrode

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Goodwin, S. (2016). Fabrication and measurement of graphene electrochemical microelectrodes. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/fabrication-and-measurement-of-graphene-electrochemical-microelectrodes(68041aff-f4b6-4562-b807-dd547ef9c002).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.728099

Chicago Manual of Style (16th Edition):

Goodwin, Stefan. “Fabrication and measurement of graphene electrochemical microelectrodes.” 2016. Doctoral Dissertation, University of Manchester. Accessed April 22, 2019. https://www.research.manchester.ac.uk/portal/en/theses/fabrication-and-measurement-of-graphene-electrochemical-microelectrodes(68041aff-f4b6-4562-b807-dd547ef9c002).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.728099.

MLA Handbook (7th Edition):

Goodwin, Stefan. “Fabrication and measurement of graphene electrochemical microelectrodes.” 2016. Web. 22 Apr 2019.

Vancouver:

Goodwin S. Fabrication and measurement of graphene electrochemical microelectrodes. [Internet] [Doctoral dissertation]. University of Manchester; 2016. [cited 2019 Apr 22]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/fabrication-and-measurement-of-graphene-electrochemical-microelectrodes(68041aff-f4b6-4562-b807-dd547ef9c002).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.728099.

Council of Science Editors:

Goodwin S. Fabrication and measurement of graphene electrochemical microelectrodes. [Doctoral Dissertation]. University of Manchester; 2016. Available from: https://www.research.manchester.ac.uk/portal/en/theses/fabrication-and-measurement-of-graphene-electrochemical-microelectrodes(68041aff-f4b6-4562-b807-dd547ef9c002).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.728099


NSYSU

10. Chiou, Shi-Yung. Interfacial Mechanical Properties, Oxidation Properties and Microstructure of Titanium-Based Nitride Films Deposited on Steels.

Degree: PhD, Materials Science and Engineering, 2001, NSYSU

 Titanium-based nitride films are deposited on steels by magnetron reactive sputtering for cutting, forming and decorative applications. The nitride films about 2 m thick with… (more)

Subjects/Keywords: Nitride; Film

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chiou, S. (2001). Interfacial Mechanical Properties, Oxidation Properties and Microstructure of Titanium-Based Nitride Films Deposited on Steels. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0207101-134903

Chicago Manual of Style (16th Edition):

Chiou, Shi-Yung. “Interfacial Mechanical Properties, Oxidation Properties and Microstructure of Titanium-Based Nitride Films Deposited on Steels.” 2001. Doctoral Dissertation, NSYSU. Accessed April 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0207101-134903.

MLA Handbook (7th Edition):

Chiou, Shi-Yung. “Interfacial Mechanical Properties, Oxidation Properties and Microstructure of Titanium-Based Nitride Films Deposited on Steels.” 2001. Web. 22 Apr 2019.

Vancouver:

Chiou S. Interfacial Mechanical Properties, Oxidation Properties and Microstructure of Titanium-Based Nitride Films Deposited on Steels. [Internet] [Doctoral dissertation]. NSYSU; 2001. [cited 2019 Apr 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0207101-134903.

Council of Science Editors:

Chiou S. Interfacial Mechanical Properties, Oxidation Properties and Microstructure of Titanium-Based Nitride Films Deposited on Steels. [Doctoral Dissertation]. NSYSU; 2001. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0207101-134903


Ruhr Universität Bochum

11. Rische, Daniel. MOCVD of tungsten and molybdenum nitrides.

Degree: 2008, Ruhr Universität Bochum

 Es wurden MOCVD-Precursoren für die Abscheidung von Wolfram- und Molybdännitrid hergestellt. Mit dem Ziel einer vollständigen Stickstoffkoordination wurden das Design dieser Precursoren auf dem Guanidinatligand… (more)

Subjects/Keywords: Wolfram; Molybdän; Nitride; Präkursor; Diffusionsbarriere

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rische, D. (2008). MOCVD of tungsten and molybdenum nitrides. (Thesis). Ruhr Universität Bochum. Retrieved from http://nbn-resolving.de/urn/resolver.pl?urn=urn:nbn:de:hbz:294-21704

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rische, Daniel. “MOCVD of tungsten and molybdenum nitrides.” 2008. Thesis, Ruhr Universität Bochum. Accessed April 22, 2019. http://nbn-resolving.de/urn/resolver.pl?urn=urn:nbn:de:hbz:294-21704.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rische, Daniel. “MOCVD of tungsten and molybdenum nitrides.” 2008. Web. 22 Apr 2019.

Vancouver:

Rische D. MOCVD of tungsten and molybdenum nitrides. [Internet] [Thesis]. Ruhr Universität Bochum; 2008. [cited 2019 Apr 22]. Available from: http://nbn-resolving.de/urn/resolver.pl?urn=urn:nbn:de:hbz:294-21704.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rische D. MOCVD of tungsten and molybdenum nitrides. [Thesis]. Ruhr Universität Bochum; 2008. Available from: http://nbn-resolving.de/urn/resolver.pl?urn=urn:nbn:de:hbz:294-21704

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

12. Jovanovic, Zoran R. Kinetic study on the production of silicon nitride by direct nitridation of silicon in a fluidized bed : experiment and modeling.

Degree: PhD, Chemical Engineering, 1994, Oregon State University

Subjects/Keywords: Silicon nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jovanovic, Z. R. (1994). Kinetic study on the production of silicon nitride by direct nitridation of silicon in a fluidized bed : experiment and modeling. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/34894

Chicago Manual of Style (16th Edition):

Jovanovic, Zoran R. “Kinetic study on the production of silicon nitride by direct nitridation of silicon in a fluidized bed : experiment and modeling.” 1994. Doctoral Dissertation, Oregon State University. Accessed April 22, 2019. http://hdl.handle.net/1957/34894.

MLA Handbook (7th Edition):

Jovanovic, Zoran R. “Kinetic study on the production of silicon nitride by direct nitridation of silicon in a fluidized bed : experiment and modeling.” 1994. Web. 22 Apr 2019.

Vancouver:

Jovanovic ZR. Kinetic study on the production of silicon nitride by direct nitridation of silicon in a fluidized bed : experiment and modeling. [Internet] [Doctoral dissertation]. Oregon State University; 1994. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1957/34894.

Council of Science Editors:

Jovanovic ZR. Kinetic study on the production of silicon nitride by direct nitridation of silicon in a fluidized bed : experiment and modeling. [Doctoral Dissertation]. Oregon State University; 1994. Available from: http://hdl.handle.net/1957/34894


University of Hong Kong

13. Zhang, Yiyun. GaN-based microdisk lasers on Si.

Degree: PhD, 2016, University of Hong Kong

 III-nitride compound semiconductors have emerged as indispensable materials for a wide range of optoelectronic devices. With wide and direct energy bandgaps, emissions from III-nitride semiconductors… (more)

Subjects/Keywords: Lasers; Gallium nitride; Semiconductors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zhang, Y. (2016). GaN-based microdisk lasers on Si. (Doctoral Dissertation). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/236587

Chicago Manual of Style (16th Edition):

Zhang, Yiyun. “GaN-based microdisk lasers on Si.” 2016. Doctoral Dissertation, University of Hong Kong. Accessed April 22, 2019. http://hdl.handle.net/10722/236587.

MLA Handbook (7th Edition):

Zhang, Yiyun. “GaN-based microdisk lasers on Si.” 2016. Web. 22 Apr 2019.

Vancouver:

Zhang Y. GaN-based microdisk lasers on Si. [Internet] [Doctoral dissertation]. University of Hong Kong; 2016. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/10722/236587.

Council of Science Editors:

Zhang Y. GaN-based microdisk lasers on Si. [Doctoral Dissertation]. University of Hong Kong; 2016. Available from: http://hdl.handle.net/10722/236587


University of Hong Kong

14. Mak, Yick-hong, Giuseppe. Development of laser processes for nitride light-emitting diodes and its applications.

Degree: PhD, 2010, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Lam, EYM, Choi, HW.

Subjects/Keywords: Light emitting diodes.; Gallium nitride.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mak, Yick-hong, G. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Doctoral Dissertation). University of Hong Kong. Retrieved from Mak, Y. G. [麥易康]. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4587982 ; http://dx.doi.org/10.5353/th_b4587982 ; http://hdl.handle.net/10722/134052

Chicago Manual of Style (16th Edition):

Mak, Yick-hong, Giuseppe. “Development of laser processes for nitride light-emitting diodes and its applications.” 2010. Doctoral Dissertation, University of Hong Kong. Accessed April 22, 2019. Mak, Y. G. [麥易康]. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4587982 ; http://dx.doi.org/10.5353/th_b4587982 ; http://hdl.handle.net/10722/134052.

MLA Handbook (7th Edition):

Mak, Yick-hong, Giuseppe. “Development of laser processes for nitride light-emitting diodes and its applications.” 2010. Web. 22 Apr 2019.

Vancouver:

Mak, Yick-hong G. Development of laser processes for nitride light-emitting diodes and its applications. [Internet] [Doctoral dissertation]. University of Hong Kong; 2010. [cited 2019 Apr 22]. Available from: Mak, Y. G. [麥易康]. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4587982 ; http://dx.doi.org/10.5353/th_b4587982 ; http://hdl.handle.net/10722/134052.

Council of Science Editors:

Mak, Yick-hong G. Development of laser processes for nitride light-emitting diodes and its applications. [Doctoral Dissertation]. University of Hong Kong; 2010. Available from: Mak, Y. G. [麥易康]. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4587982 ; http://dx.doi.org/10.5353/th_b4587982 ; http://hdl.handle.net/10722/134052


Hong Kong University of Science and Technology

15. Leung, Yee Wai. AIN thick films for power electronic device applications.

Degree: 1999, Hong Kong University of Science and Technology

 In recent years, a lot of efforts have been made in growth of AlN films because of its promising potential for applications in electronic devices,… (more)

Subjects/Keywords: Aluminum nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Leung, Y. W. (1999). AIN thick films for power electronic device applications. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b645018 ; http://repository.ust.hk/ir/bitstream/1783.1-5370/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Leung, Yee Wai. “AIN thick films for power electronic device applications.” 1999. Thesis, Hong Kong University of Science and Technology. Accessed April 22, 2019. https://doi.org/10.14711/thesis-b645018 ; http://repository.ust.hk/ir/bitstream/1783.1-5370/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Leung, Yee Wai. “AIN thick films for power electronic device applications.” 1999. Web. 22 Apr 2019.

Vancouver:

Leung YW. AIN thick films for power electronic device applications. [Internet] [Thesis]. Hong Kong University of Science and Technology; 1999. [cited 2019 Apr 22]. Available from: https://doi.org/10.14711/thesis-b645018 ; http://repository.ust.hk/ir/bitstream/1783.1-5370/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Leung YW. AIN thick films for power electronic device applications. [Thesis]. Hong Kong University of Science and Technology; 1999. Available from: https://doi.org/10.14711/thesis-b645018 ; http://repository.ust.hk/ir/bitstream/1783.1-5370/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Hong Kong

16. Zhang, Xuhui. GaN-based free-standing microdisks and nanostructures.

Degree: PhD, 2014, University of Hong Kong

 In this thesis, various micro- and nano-structures, fabricated by micro- and nanosphere lithography (NSL), were applied onto gallium nitride (GaN) based direct-bandgap semiconductors to develop… (more)

Subjects/Keywords: Nanostructures; Gallium nitride; Microstructure

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zhang, X. (2014). GaN-based free-standing microdisks and nanostructures. (Doctoral Dissertation). University of Hong Kong. Retrieved from Zhang, X. [張旭輝]. (2014). GaN-based free-standing microdisks and nanostructures. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5334871 ; http://dx.doi.org/10.5353/th_b5334871 ; http://hdl.handle.net/10722/207202

Chicago Manual of Style (16th Edition):

Zhang, Xuhui. “GaN-based free-standing microdisks and nanostructures.” 2014. Doctoral Dissertation, University of Hong Kong. Accessed April 22, 2019. Zhang, X. [張旭輝]. (2014). GaN-based free-standing microdisks and nanostructures. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5334871 ; http://dx.doi.org/10.5353/th_b5334871 ; http://hdl.handle.net/10722/207202.

MLA Handbook (7th Edition):

Zhang, Xuhui. “GaN-based free-standing microdisks and nanostructures.” 2014. Web. 22 Apr 2019.

Vancouver:

Zhang X. GaN-based free-standing microdisks and nanostructures. [Internet] [Doctoral dissertation]. University of Hong Kong; 2014. [cited 2019 Apr 22]. Available from: Zhang, X. [張旭輝]. (2014). GaN-based free-standing microdisks and nanostructures. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5334871 ; http://dx.doi.org/10.5353/th_b5334871 ; http://hdl.handle.net/10722/207202.

Council of Science Editors:

Zhang X. GaN-based free-standing microdisks and nanostructures. [Doctoral Dissertation]. University of Hong Kong; 2014. Available from: Zhang, X. [張旭輝]. (2014). GaN-based free-standing microdisks and nanostructures. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5334871 ; http://dx.doi.org/10.5353/th_b5334871 ; http://hdl.handle.net/10722/207202


University of Manchester

17. Riaz, Ibtsam. Graphene and boron nitride : members of two dimensional material family.

Degree: PhD, 2011, University of Manchester

 Graphene and monoatomic boron nitride as members of the new class of two dimensional materials are discussed in this thesis. Since the discovery of graphene… (more)

Subjects/Keywords: 620.198; Graphene; Boron Nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Riaz, I. (2011). Graphene and boron nitride : members of two dimensional material family. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/graphene-and-boron-nitride-members-of-two-dimensional-material-family(858f8149-0106-4ea2-87b5-fab5f513185d).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.551344

Chicago Manual of Style (16th Edition):

Riaz, Ibtsam. “Graphene and boron nitride : members of two dimensional material family.” 2011. Doctoral Dissertation, University of Manchester. Accessed April 22, 2019. https://www.research.manchester.ac.uk/portal/en/theses/graphene-and-boron-nitride-members-of-two-dimensional-material-family(858f8149-0106-4ea2-87b5-fab5f513185d).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.551344.

MLA Handbook (7th Edition):

Riaz, Ibtsam. “Graphene and boron nitride : members of two dimensional material family.” 2011. Web. 22 Apr 2019.

Vancouver:

Riaz I. Graphene and boron nitride : members of two dimensional material family. [Internet] [Doctoral dissertation]. University of Manchester; 2011. [cited 2019 Apr 22]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/graphene-and-boron-nitride-members-of-two-dimensional-material-family(858f8149-0106-4ea2-87b5-fab5f513185d).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.551344.

Council of Science Editors:

Riaz I. Graphene and boron nitride : members of two dimensional material family. [Doctoral Dissertation]. University of Manchester; 2011. Available from: https://www.research.manchester.ac.uk/portal/en/theses/graphene-and-boron-nitride-members-of-two-dimensional-material-family(858f8149-0106-4ea2-87b5-fab5f513185d).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.551344


Cornell University

18. Brown, Richard. Advanced Dielectrics For Gallium Nitride Power Electronics .

Degree: 2011, Cornell University

 This dissertation details the synthesis, characterization, and application of low-pressure chemical vapor deposited (LPCVD) Aluminum Silicon Nitride (Al x Siy Nz ) dielectrics to AlGaN/GaN… (more)

Subjects/Keywords: Gallium Nitride; hemt; Dielectric

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Brown, R. (2011). Advanced Dielectrics For Gallium Nitride Power Electronics . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/33475

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Brown, Richard. “Advanced Dielectrics For Gallium Nitride Power Electronics .” 2011. Thesis, Cornell University. Accessed April 22, 2019. http://hdl.handle.net/1813/33475.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Brown, Richard. “Advanced Dielectrics For Gallium Nitride Power Electronics .” 2011. Web. 22 Apr 2019.

Vancouver:

Brown R. Advanced Dielectrics For Gallium Nitride Power Electronics . [Internet] [Thesis]. Cornell University; 2011. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1813/33475.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Brown R. Advanced Dielectrics For Gallium Nitride Power Electronics . [Thesis]. Cornell University; 2011. Available from: http://hdl.handle.net/1813/33475

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Arizona State University

19. Sun, Kewei. Structural and Optical Properties of Wide Bandgap Nitride Semiconductors Using Electron Microscopy Techniques.

Degree: PhD, Physics, 2011, Arizona State University

 ABSTRACT Group III-nitride semiconductor materials have been commercially used in fabrication of light-emitting diodes (LEDs) and laser diodes (LDs) covering the spectral range from UV… (more)

Subjects/Keywords: Physics; Electron Microscope; Nitride Semiconductor

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Sun, K. (2011). Structural and Optical Properties of Wide Bandgap Nitride Semiconductors Using Electron Microscopy Techniques. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/14298

Chicago Manual of Style (16th Edition):

Sun, Kewei. “Structural and Optical Properties of Wide Bandgap Nitride Semiconductors Using Electron Microscopy Techniques.” 2011. Doctoral Dissertation, Arizona State University. Accessed April 22, 2019. http://repository.asu.edu/items/14298.

MLA Handbook (7th Edition):

Sun, Kewei. “Structural and Optical Properties of Wide Bandgap Nitride Semiconductors Using Electron Microscopy Techniques.” 2011. Web. 22 Apr 2019.

Vancouver:

Sun K. Structural and Optical Properties of Wide Bandgap Nitride Semiconductors Using Electron Microscopy Techniques. [Internet] [Doctoral dissertation]. Arizona State University; 2011. [cited 2019 Apr 22]. Available from: http://repository.asu.edu/items/14298.

Council of Science Editors:

Sun K. Structural and Optical Properties of Wide Bandgap Nitride Semiconductors Using Electron Microscopy Techniques. [Doctoral Dissertation]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/14298


University of Manchester

20. Goodwin, Stefan David. FABRICATION AND MEASUREMENT OF GRAPHENE ELECTROCHEMICAL MICROELECTRODES.

Degree: 2016, University of Manchester

 The electrochemical properties of graphene were investigated using a novel and clean method to fabricate device structures with mechanically exfoliated graphene samples. Graphene is known… (more)

Subjects/Keywords: Graphene; Electrochemistry; Boron nitride; Ultramicroelectrode

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Goodwin, S. D. (2016). FABRICATION AND MEASUREMENT OF GRAPHENE ELECTROCHEMICAL MICROELECTRODES. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:305876

Chicago Manual of Style (16th Edition):

Goodwin, Stefan David. “FABRICATION AND MEASUREMENT OF GRAPHENE ELECTROCHEMICAL MICROELECTRODES.” 2016. Doctoral Dissertation, University of Manchester. Accessed April 22, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:305876.

MLA Handbook (7th Edition):

Goodwin, Stefan David. “FABRICATION AND MEASUREMENT OF GRAPHENE ELECTROCHEMICAL MICROELECTRODES.” 2016. Web. 22 Apr 2019.

Vancouver:

Goodwin SD. FABRICATION AND MEASUREMENT OF GRAPHENE ELECTROCHEMICAL MICROELECTRODES. [Internet] [Doctoral dissertation]. University of Manchester; 2016. [cited 2019 Apr 22]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:305876.

Council of Science Editors:

Goodwin SD. FABRICATION AND MEASUREMENT OF GRAPHENE ELECTROCHEMICAL MICROELECTRODES. [Doctoral Dissertation]. University of Manchester; 2016. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:305876


Oregon State University

21. Pavarajarn, Varong. Roles of gas and solid components in the direct nitridation of silicon.

Degree: PhD, Chemical Engineering, 2002, Oregon State University

 The factors influencing the direct nitridation of silicon, including the effects of the native oxide layer covering the surface of silicon, the effects of hydrogen… (more)

Subjects/Keywords: Silicon nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pavarajarn, V. (2002). Roles of gas and solid components in the direct nitridation of silicon. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/31597

Chicago Manual of Style (16th Edition):

Pavarajarn, Varong. “Roles of gas and solid components in the direct nitridation of silicon.” 2002. Doctoral Dissertation, Oregon State University. Accessed April 22, 2019. http://hdl.handle.net/1957/31597.

MLA Handbook (7th Edition):

Pavarajarn, Varong. “Roles of gas and solid components in the direct nitridation of silicon.” 2002. Web. 22 Apr 2019.

Vancouver:

Pavarajarn V. Roles of gas and solid components in the direct nitridation of silicon. [Internet] [Doctoral dissertation]. Oregon State University; 2002. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1957/31597.

Council of Science Editors:

Pavarajarn V. Roles of gas and solid components in the direct nitridation of silicon. [Doctoral Dissertation]. Oregon State University; 2002. Available from: http://hdl.handle.net/1957/31597


Oregon State University

22. Delzer, Dennis Richard. Reactively sputtered films of silicon nitride for diffusion masking.

Degree: MS, Electrical and Electronics Engineering, 1966, Oregon State University

 The experimental procedure for reactively sputtering films of silicon nitride together with the methods for measuring the film thickness have been investigated. Some of the… (more)

Subjects/Keywords: Silicon nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Delzer, D. R. (1966). Reactively sputtered films of silicon nitride for diffusion masking. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/48245

Chicago Manual of Style (16th Edition):

Delzer, Dennis Richard. “Reactively sputtered films of silicon nitride for diffusion masking.” 1966. Masters Thesis, Oregon State University. Accessed April 22, 2019. http://hdl.handle.net/1957/48245.

MLA Handbook (7th Edition):

Delzer, Dennis Richard. “Reactively sputtered films of silicon nitride for diffusion masking.” 1966. Web. 22 Apr 2019.

Vancouver:

Delzer DR. Reactively sputtered films of silicon nitride for diffusion masking. [Internet] [Masters thesis]. Oregon State University; 1966. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/1957/48245.

Council of Science Editors:

Delzer DR. Reactively sputtered films of silicon nitride for diffusion masking. [Masters Thesis]. Oregon State University; 1966. Available from: http://hdl.handle.net/1957/48245


University of British Columbia

23. Korinek, George Jiri. Topochemical reactions of boron nitride .

Degree: 1954, University of British Columbia

 An absorption complex or compound between boron nitride and chromyl chloride was discovered and studied in some detail. The method used to prepare the boron… (more)

Subjects/Keywords: Boron nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Korinek, G. J. (1954). Topochemical reactions of boron nitride . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/40976

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Korinek, George Jiri. “Topochemical reactions of boron nitride .” 1954. Thesis, University of British Columbia. Accessed April 22, 2019. http://hdl.handle.net/2429/40976.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Korinek, George Jiri. “Topochemical reactions of boron nitride .” 1954. Web. 22 Apr 2019.

Vancouver:

Korinek GJ. Topochemical reactions of boron nitride . [Internet] [Thesis]. University of British Columbia; 1954. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/2429/40976.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Korinek GJ. Topochemical reactions of boron nitride . [Thesis]. University of British Columbia; 1954. Available from: http://hdl.handle.net/2429/40976

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Cambridge

24. Chang, Tse Yang. Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors.

Degree: PhD, 2012, University of Cambridge

 UV and deep-UV emitters based on AlGaN/AlN heterostructures are very inefficient due to the high lattice mismatch of these films with sapphire substrates, leading to… (more)

Subjects/Keywords: 669; LED; Nitride; TEM; Ultraviolet

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chang, T. Y. (2012). Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors. (Doctoral Dissertation). University of Cambridge. Retrieved from https://www.repository.cam.ac.uk/handle/1810/242371 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549913

Chicago Manual of Style (16th Edition):

Chang, Tse Yang. “Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors.” 2012. Doctoral Dissertation, University of Cambridge. Accessed April 22, 2019. https://www.repository.cam.ac.uk/handle/1810/242371 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549913.

MLA Handbook (7th Edition):

Chang, Tse Yang. “Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors.” 2012. Web. 22 Apr 2019.

Vancouver:

Chang TY. Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors. [Internet] [Doctoral dissertation]. University of Cambridge; 2012. [cited 2019 Apr 22]. Available from: https://www.repository.cam.ac.uk/handle/1810/242371 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549913.

Council of Science Editors:

Chang TY. Characterisation of polar (0001) and non-polar (11-20) ultraviolet nitride semiconductors. [Doctoral Dissertation]. University of Cambridge; 2012. Available from: https://www.repository.cam.ac.uk/handle/1810/242371 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549913


Deakin University

25. Bhuiyan, Md Mahedi Hasan. Boron Nitride nanotube reinforced Titanium matrix composite.

Degree: 2016, Deakin University

 Boron nitride nanotube reinforcement at titanium matrix composite increased the strength of the composite both at room and high temperature. At higher sintering temperature, nanotube… (more)

Subjects/Keywords: Boron Nitride; nanotubes; Titanium; Engineering

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bhuiyan, M. M. H. (2016). Boron Nitride nanotube reinforced Titanium matrix composite. (Thesis). Deakin University. Retrieved from http://hdl.handle.net/10536/DRO/DU:30085491

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bhuiyan, Md Mahedi Hasan. “Boron Nitride nanotube reinforced Titanium matrix composite.” 2016. Thesis, Deakin University. Accessed April 22, 2019. http://hdl.handle.net/10536/DRO/DU:30085491.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bhuiyan, Md Mahedi Hasan. “Boron Nitride nanotube reinforced Titanium matrix composite.” 2016. Web. 22 Apr 2019.

Vancouver:

Bhuiyan MMH. Boron Nitride nanotube reinforced Titanium matrix composite. [Internet] [Thesis]. Deakin University; 2016. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/10536/DRO/DU:30085491.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bhuiyan MMH. Boron Nitride nanotube reinforced Titanium matrix composite. [Thesis]. Deakin University; 2016. Available from: http://hdl.handle.net/10536/DRO/DU:30085491

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université Catholique de Louvain

26. Meyer, Nathalie. Noble metal supported catalysts for lactose transformations in liquid phase.

Degree: 2014, Université Catholique de Louvain

Carbohydrates are an important source of renewable materials which can be converted into high added-value products. Sugar transformations should ideally be carried out with recyclable… (more)

Subjects/Keywords: Lactose; Boron nitride; Palladium; Selectivity

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Meyer, N. (2014). Noble metal supported catalysts for lactose transformations in liquid phase. (Thesis). Université Catholique de Louvain. Retrieved from http://hdl.handle.net/2078.1/151944

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Meyer, Nathalie. “Noble metal supported catalysts for lactose transformations in liquid phase.” 2014. Thesis, Université Catholique de Louvain. Accessed April 22, 2019. http://hdl.handle.net/2078.1/151944.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Meyer, Nathalie. “Noble metal supported catalysts for lactose transformations in liquid phase.” 2014. Web. 22 Apr 2019.

Vancouver:

Meyer N. Noble metal supported catalysts for lactose transformations in liquid phase. [Internet] [Thesis]. Université Catholique de Louvain; 2014. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/2078.1/151944.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Meyer N. Noble metal supported catalysts for lactose transformations in liquid phase. [Thesis]. Université Catholique de Louvain; 2014. Available from: http://hdl.handle.net/2078.1/151944

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Missouri – Columbia

27. Rothenberger, Jason. Construction of a test chamber for ultra-low gas concentrations and its use for tesing novel aluminum nitride sensors by Q-DLTS.

Degree: 2011, University of Missouri – Columbia

 [ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI AT AUTHOR'S REQUEST.] A novel sensor comprised of a metallized wide band-gap semiconductor substrate and a software-based Charge-Deep… (more)

Subjects/Keywords: chemical sensors; semiconductors; aluminum nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rothenberger, J. (2011). Construction of a test chamber for ultra-low gas concentrations and its use for tesing novel aluminum nitride sensors by Q-DLTS. (Thesis). University of Missouri – Columbia. Retrieved from http://hdl.handle.net/10355/14281

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rothenberger, Jason. “Construction of a test chamber for ultra-low gas concentrations and its use for tesing novel aluminum nitride sensors by Q-DLTS.” 2011. Thesis, University of Missouri – Columbia. Accessed April 22, 2019. http://hdl.handle.net/10355/14281.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rothenberger, Jason. “Construction of a test chamber for ultra-low gas concentrations and its use for tesing novel aluminum nitride sensors by Q-DLTS.” 2011. Web. 22 Apr 2019.

Vancouver:

Rothenberger J. Construction of a test chamber for ultra-low gas concentrations and its use for tesing novel aluminum nitride sensors by Q-DLTS. [Internet] [Thesis]. University of Missouri – Columbia; 2011. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/10355/14281.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rothenberger J. Construction of a test chamber for ultra-low gas concentrations and its use for tesing novel aluminum nitride sensors by Q-DLTS. [Thesis]. University of Missouri – Columbia; 2011. Available from: http://hdl.handle.net/10355/14281

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Texas Tech University

28. Du, Xiaozhang. Optical study on hexagonal boron nitride.

Degree: PhD, Electrical Engineering, 2018, Texas Tech University

 This dissertation reveals the origins of deep-impurity and near band-edge optical transitions in h-BN, the temperature and layer number dependence of energy band gap of… (more)

Subjects/Keywords: Photoluminescence; hexagonal boron nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Du, X. (2018). Optical study on hexagonal boron nitride. (Doctoral Dissertation). Texas Tech University. Retrieved from http://hdl.handle.net/2346/74370

Chicago Manual of Style (16th Edition):

Du, Xiaozhang. “Optical study on hexagonal boron nitride.” 2018. Doctoral Dissertation, Texas Tech University. Accessed April 22, 2019. http://hdl.handle.net/2346/74370.

MLA Handbook (7th Edition):

Du, Xiaozhang. “Optical study on hexagonal boron nitride.” 2018. Web. 22 Apr 2019.

Vancouver:

Du X. Optical study on hexagonal boron nitride. [Internet] [Doctoral dissertation]. Texas Tech University; 2018. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/2346/74370.

Council of Science Editors:

Du X. Optical study on hexagonal boron nitride. [Doctoral Dissertation]. Texas Tech University; 2018. Available from: http://hdl.handle.net/2346/74370


Indian Institute of Science

29. Roul, Basanta Kumar. Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy.

Degree: 2012, Indian Institute of Science

 Group III-nitride semiconductors have received much research attention and witnessed a significant development due to their ample applications in solid-state lighting and high-power/high-frequency electronics. Numerous… (more)

Subjects/Keywords: Molecular Beam Epitaxy (MBE); Thin Film Growth; III-Nitride Semiconductors; III-Nitride Heterostructures; Nitride Epitaxial Heterostructures; Nitride Epitaxial Films; Nitride Nanostructures; Nitride Semiconductors - Ferromagnetism; Gallium Nitride (GaN) Films; Gold/Gallium Nitride (Au/GaN) Schottky Diodes; Indium Nitride (InN) Thin Films; Indium Nitride (InN)/Gallium Nitride (GaN) Heterostructures; Gallium Nitride (GaN) Epitaxial Films; Nitride Schottky Diodes; Indium Nitride(InN) Nanostructures; Epitaxial Thin Films; Nitride Epitaxial Films; InN/GaN Heterostructures; InN Nanostructures; Plasma-Assisted Molecular Beam Epitaxy (PAMBE); Crystal Lattices; Materials Science

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Roul, B. K. (2012). Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2514

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Roul, Basanta Kumar. “Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy.” 2012. Thesis, Indian Institute of Science. Accessed April 22, 2019. http://hdl.handle.net/2005/2514.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Roul, Basanta Kumar. “Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy.” 2012. Web. 22 Apr 2019.

Vancouver:

Roul BK. Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy. [Internet] [Thesis]. Indian Institute of Science; 2012. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/2005/2514.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Roul BK. Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy. [Thesis]. Indian Institute of Science; 2012. Available from: http://hdl.handle.net/2005/2514

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

30. Chandrasekar, Hareesh. Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives.

Degree: 2016, Indian Institute of Science

 Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency… (more)

Subjects/Keywords: Group III-A Nitrides; High Electron Mobility Transistor; Nitride Semiconductors; Aluminium Nitride-Silicon Interface; Gallium Nitride Films; Aluminium Nitride Thin Films; Nitride Films; Nitride Epitaxy; Nitride Hetero-Interfaces; Aluminium Nitride (AlN) Epitaxial Layers; GaN Films; AlN/Si Hetero-interface; AlN-Si Interface; Materials Science

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chandrasekar, H. (2016). Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2740

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chandrasekar, Hareesh. “Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives.” 2016. Thesis, Indian Institute of Science. Accessed April 22, 2019. http://hdl.handle.net/2005/2740.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chandrasekar, Hareesh. “Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives.” 2016. Web. 22 Apr 2019.

Vancouver:

Chandrasekar H. Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives. [Internet] [Thesis]. Indian Institute of Science; 2016. [cited 2019 Apr 22]. Available from: http://hdl.handle.net/2005/2740.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chandrasekar H. Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives. [Thesis]. Indian Institute of Science; 2016. Available from: http://hdl.handle.net/2005/2740

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2] [3] [4] [5] … [39]

.