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You searched for subject:(Negative gate bias step stress test). Showing records 1 – 30 of 42747 total matches.

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Georgia Tech

1. Kim, Samuel H. Addressing thermal and environmental reliability in GaN based high electron mobility transistors.

Degree: MS, Mechanical Engineering, 2014, Georgia Tech

 AlGaN/GaN high electron mobility transistors (HEMTs) have appeared as attractive candidates for high power, high frequency, and high temperature operation at microwave frequencies. In particular,… (more)

Subjects/Keywords: Reliability; GaN; HEMTs; HFETs; Temperature; Environmental reliability; Negative gate bias step stress test;

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APA (6th Edition):

Kim, S. H. (2014). Addressing thermal and environmental reliability in GaN based high electron mobility transistors. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/52244

Chicago Manual of Style (16th Edition):

Kim, Samuel H. “Addressing thermal and environmental reliability in GaN based high electron mobility transistors.” 2014. Masters Thesis, Georgia Tech. Accessed June 16, 2019. http://hdl.handle.net/1853/52244.

MLA Handbook (7th Edition):

Kim, Samuel H. “Addressing thermal and environmental reliability in GaN based high electron mobility transistors.” 2014. Web. 16 Jun 2019.

Vancouver:

Kim SH. Addressing thermal and environmental reliability in GaN based high electron mobility transistors. [Internet] [Masters thesis]. Georgia Tech; 2014. [cited 2019 Jun 16]. Available from: http://hdl.handle.net/1853/52244.

Council of Science Editors:

Kim SH. Addressing thermal and environmental reliability in GaN based high electron mobility transistors. [Masters Thesis]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/52244

2. Kulyk, Brian D. 1990-. Antidepressant-Like Effects of Ketamine on Fear Conditioning and Extinction.

Degree: 2017, University of Saskatchewan

 The experience of chronic stress plays an important role in the pathogenesis of major depressive disorder. Prolonged stress induces a state of chronically elevated glucocorticoid… (more)

Subjects/Keywords: depression; ketamine; stress; corticosterone; negative cognitive bias; fear conditioning; extinction; reinstatement

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APA (6th Edition):

Kulyk, B. D. 1. (2017). Antidepressant-Like Effects of Ketamine on Fear Conditioning and Extinction. (Thesis). University of Saskatchewan. Retrieved from http://hdl.handle.net/10388/7664

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kulyk, Brian D 1990-. “Antidepressant-Like Effects of Ketamine on Fear Conditioning and Extinction.” 2017. Thesis, University of Saskatchewan. Accessed June 16, 2019. http://hdl.handle.net/10388/7664.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kulyk, Brian D 1990-. “Antidepressant-Like Effects of Ketamine on Fear Conditioning and Extinction.” 2017. Web. 16 Jun 2019.

Vancouver:

Kulyk BD1. Antidepressant-Like Effects of Ketamine on Fear Conditioning and Extinction. [Internet] [Thesis]. University of Saskatchewan; 2017. [cited 2019 Jun 16]. Available from: http://hdl.handle.net/10388/7664.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kulyk BD1. Antidepressant-Like Effects of Ketamine on Fear Conditioning and Extinction. [Thesis]. University of Saskatchewan; 2017. Available from: http://hdl.handle.net/10388/7664

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

3. Wu, Chang-Pei. Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures.

Degree: Master, Physics, 2012, NSYSU

 The higher mobility is needed for thin film transistor (TFT) mainly used to be applied in the larger size flat-panel displays (FPDs). The amorphous metal… (more)

Subjects/Keywords: thin film transistor (TFT); positive bias stress; α-IGZO; negative bias stress with illumination; hot carrier stress effect

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APA (6th Edition):

Wu, C. (2012). Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712112-161056

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Chang-Pei. “Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures.” 2012. Thesis, NSYSU. Accessed June 16, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712112-161056.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Chang-Pei. “Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures.” 2012. Web. 16 Jun 2019.

Vancouver:

Wu C. Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Jun 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712112-161056.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu C. Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712112-161056

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

4. Hsu, Hui-shun. A Study of the Local Bias Stress Instability of the Polycrystalline-Silicon Tunnel Thin-Film Transistor.

Degree: Master, Electrical Engineering, 2018, NSYSU

 Tunneling thin-film transistor exhibits better short channel effect (SCE) immunity than conventional thin-film transistor due to its special carrier transport mechanism: interband tunneling. According to… (more)

Subjects/Keywords: Hot Carrier Stress; Negative Bias Stress; Thin-Film Transistor; Tunnel Thin-Film Transistor; Relatively; Positive Bias Stress

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APA (6th Edition):

Hsu, H. (2018). A Study of the Local Bias Stress Instability of the Polycrystalline-Silicon Tunnel Thin-Film Transistor. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715118-232711

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsu, Hui-shun. “A Study of the Local Bias Stress Instability of the Polycrystalline-Silicon Tunnel Thin-Film Transistor.” 2018. Thesis, NSYSU. Accessed June 16, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715118-232711.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsu, Hui-shun. “A Study of the Local Bias Stress Instability of the Polycrystalline-Silicon Tunnel Thin-Film Transistor.” 2018. Web. 16 Jun 2019.

Vancouver:

Hsu H. A Study of the Local Bias Stress Instability of the Polycrystalline-Silicon Tunnel Thin-Film Transistor. [Internet] [Thesis]. NSYSU; 2018. [cited 2019 Jun 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715118-232711.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsu H. A Study of the Local Bias Stress Instability of the Polycrystalline-Silicon Tunnel Thin-Film Transistor. [Thesis]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715118-232711

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Minnesota

5. Ayodele, Alicia. Examining Power and Type 1 Error for Step and Item Level Tests of Invariance: Investigating the Effect of the Number of Item Score Levels.

Degree: PhD, Educational Psychology, 2017, University of Minnesota

 Within polytomous items, differential item functioning (DIF) can take on various forms due to the number of response categories. The lack of invariance at this… (more)

Subjects/Keywords: categorical data; differential item functioning; differential step functioning; nonparametric tests; odds ratio; test bias

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APA (6th Edition):

Ayodele, A. (2017). Examining Power and Type 1 Error for Step and Item Level Tests of Invariance: Investigating the Effect of the Number of Item Score Levels. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/191406

Chicago Manual of Style (16th Edition):

Ayodele, Alicia. “Examining Power and Type 1 Error for Step and Item Level Tests of Invariance: Investigating the Effect of the Number of Item Score Levels.” 2017. Doctoral Dissertation, University of Minnesota. Accessed June 16, 2019. http://hdl.handle.net/11299/191406.

MLA Handbook (7th Edition):

Ayodele, Alicia. “Examining Power and Type 1 Error for Step and Item Level Tests of Invariance: Investigating the Effect of the Number of Item Score Levels.” 2017. Web. 16 Jun 2019.

Vancouver:

Ayodele A. Examining Power and Type 1 Error for Step and Item Level Tests of Invariance: Investigating the Effect of the Number of Item Score Levels. [Internet] [Doctoral dissertation]. University of Minnesota; 2017. [cited 2019 Jun 16]. Available from: http://hdl.handle.net/11299/191406.

Council of Science Editors:

Ayodele A. Examining Power and Type 1 Error for Step and Item Level Tests of Invariance: Investigating the Effect of the Number of Item Score Levels. [Doctoral Dissertation]. University of Minnesota; 2017. Available from: http://hdl.handle.net/11299/191406


McMaster University

6. Hamedani, Atayeh. Stress Response in Individuals Diagnosed with Hoarding Disorder.

Degree: MS, 2014, McMaster University

Hoarding disorder (HD) is characterized by (a) the acquisition of and inability to discard a large number of possessions; (b) clutter that interferes with the… (more)

Subjects/Keywords: Hoarding Disorder; Stress response; Cortisol; Negative Affect; Trier social stress test

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APA (6th Edition):

Hamedani, A. (2014). Stress Response in Individuals Diagnosed with Hoarding Disorder. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/16279

Chicago Manual of Style (16th Edition):

Hamedani, Atayeh. “Stress Response in Individuals Diagnosed with Hoarding Disorder.” 2014. Masters Thesis, McMaster University. Accessed June 16, 2019. http://hdl.handle.net/11375/16279.

MLA Handbook (7th Edition):

Hamedani, Atayeh. “Stress Response in Individuals Diagnosed with Hoarding Disorder.” 2014. Web. 16 Jun 2019.

Vancouver:

Hamedani A. Stress Response in Individuals Diagnosed with Hoarding Disorder. [Internet] [Masters thesis]. McMaster University; 2014. [cited 2019 Jun 16]. Available from: http://hdl.handle.net/11375/16279.

Council of Science Editors:

Hamedani A. Stress Response in Individuals Diagnosed with Hoarding Disorder. [Masters Thesis]. McMaster University; 2014. Available from: http://hdl.handle.net/11375/16279


University of Manchester

7. Buck, Robert James. An Investigation of Attentional Bias in Test Anxiety.

Degree: 2018, University of Manchester

Test anxiety is an individual personality trait, which results in elevated state anxiety in situations of performance evaluation. For school-age children, high-stakes examinations occurring at… (more)

Subjects/Keywords: Test Anxiety; Attentional Bias; Dot Probe; Exam Stress; Trier Social Stress Test

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Buck, R. J. (2018). An Investigation of Attentional Bias in Test Anxiety. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:313756

Chicago Manual of Style (16th Edition):

Buck, Robert James. “An Investigation of Attentional Bias in Test Anxiety.” 2018. Doctoral Dissertation, University of Manchester. Accessed June 16, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:313756.

MLA Handbook (7th Edition):

Buck, Robert James. “An Investigation of Attentional Bias in Test Anxiety.” 2018. Web. 16 Jun 2019.

Vancouver:

Buck RJ. An Investigation of Attentional Bias in Test Anxiety. [Internet] [Doctoral dissertation]. University of Manchester; 2018. [cited 2019 Jun 16]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:313756.

Council of Science Editors:

Buck RJ. An Investigation of Attentional Bias in Test Anxiety. [Doctoral Dissertation]. University of Manchester; 2018. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:313756


University of Manchester

8. Buck, Robert. An investigation of attentional bias in test anxiety.

Degree: PhD, 2018, University of Manchester

Test anxiety is an individual personality trait, which results in elevated state anxiety in situations of performance evaluation. For school-age children, high-stakes examinations occurring at… (more)

Subjects/Keywords: Trier Social Stress Test; Exam Stress; Attentional Bias; Test Anxiety; Dot Probe

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APA (6th Edition):

Buck, R. (2018). An investigation of attentional bias in test anxiety. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/an-investigation-of-attentional-bias-in-test-anxiety(7fdeadaf-f76d-47da-b99f-dc532a3b1ca4).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.756855

Chicago Manual of Style (16th Edition):

Buck, Robert. “An investigation of attentional bias in test anxiety.” 2018. Doctoral Dissertation, University of Manchester. Accessed June 16, 2019. https://www.research.manchester.ac.uk/portal/en/theses/an-investigation-of-attentional-bias-in-test-anxiety(7fdeadaf-f76d-47da-b99f-dc532a3b1ca4).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.756855.

MLA Handbook (7th Edition):

Buck, Robert. “An investigation of attentional bias in test anxiety.” 2018. Web. 16 Jun 2019.

Vancouver:

Buck R. An investigation of attentional bias in test anxiety. [Internet] [Doctoral dissertation]. University of Manchester; 2018. [cited 2019 Jun 16]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/an-investigation-of-attentional-bias-in-test-anxiety(7fdeadaf-f76d-47da-b99f-dc532a3b1ca4).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.756855.

Council of Science Editors:

Buck R. An investigation of attentional bias in test anxiety. [Doctoral Dissertation]. University of Manchester; 2018. Available from: https://www.research.manchester.ac.uk/portal/en/theses/an-investigation-of-attentional-bias-in-test-anxiety(7fdeadaf-f76d-47da-b99f-dc532a3b1ca4).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.756855


NSYSU

9. Lo, Wen-Hung. Physical Mechanism of Reliability Analysis on SOI and High-k/Metal Gate MOSFETs.

Degree: PhD, Physics, 2013, NSYSU

 This dissertation studies physical mechanisms and reliability analysis on Silicon-on-Insulator (SOI) and high-K/metal gate MOSFETs. For the part of bias temperature instability (BTI), we investigate… (more)

Subjects/Keywords: MOSFETs; Silicon-on-Insulator; high-K/metal gate; bias temperature instability; hot carrier stress

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APA (6th Edition):

Lo, W. (2013). Physical Mechanism of Reliability Analysis on SOI and High-k/Metal Gate MOSFETs. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623113-230228

Chicago Manual of Style (16th Edition):

Lo, Wen-Hung. “Physical Mechanism of Reliability Analysis on SOI and High-k/Metal Gate MOSFETs.” 2013. Doctoral Dissertation, NSYSU. Accessed June 16, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623113-230228.

MLA Handbook (7th Edition):

Lo, Wen-Hung. “Physical Mechanism of Reliability Analysis on SOI and High-k/Metal Gate MOSFETs.” 2013. Web. 16 Jun 2019.

Vancouver:

Lo W. Physical Mechanism of Reliability Analysis on SOI and High-k/Metal Gate MOSFETs. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2019 Jun 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623113-230228.

Council of Science Editors:

Lo W. Physical Mechanism of Reliability Analysis on SOI and High-k/Metal Gate MOSFETs. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623113-230228


NSYSU

10. Hung, Pei-Hua. Investigation of Gate Bias Stress-induced Instability and High Sputter Rate SiAl-based Passivation Layer Applied to Amorphous InGaZnO Thin-Film Transistors.

Degree: Master, Electro-Optical Engineering, 2015, NSYSU

 Thin film transistors (TFTs) based on amorphous InGaZn oxide (a-IGZO) have been studied extensively for potential application in next-generation flat-panel displays. Although a-IGZO TFTs exhibit… (more)

Subjects/Keywords: Charge trapping; InGaZnO; Thin Film Transistors; Gate bias stress; Threshold voltage; Hydrolysis effect

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APA (6th Edition):

Hung, P. (2015). Investigation of Gate Bias Stress-induced Instability and High Sputter Rate SiAl-based Passivation Layer Applied to Amorphous InGaZnO Thin-Film Transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623115-160429

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hung, Pei-Hua. “Investigation of Gate Bias Stress-induced Instability and High Sputter Rate SiAl-based Passivation Layer Applied to Amorphous InGaZnO Thin-Film Transistors.” 2015. Thesis, NSYSU. Accessed June 16, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623115-160429.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hung, Pei-Hua. “Investigation of Gate Bias Stress-induced Instability and High Sputter Rate SiAl-based Passivation Layer Applied to Amorphous InGaZnO Thin-Film Transistors.” 2015. Web. 16 Jun 2019.

Vancouver:

Hung P. Investigation of Gate Bias Stress-induced Instability and High Sputter Rate SiAl-based Passivation Layer Applied to Amorphous InGaZnO Thin-Film Transistors. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Jun 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623115-160429.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hung P. Investigation of Gate Bias Stress-induced Instability and High Sputter Rate SiAl-based Passivation Layer Applied to Amorphous InGaZnO Thin-Film Transistors. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623115-160429

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Toledo

11. Tine, Cheikh Abdoulahi, Tine. Effects of Gate Stress and Parasitic Package Inductance on the Reliability of GaN HEMTs.

Degree: MS, Electrical Engineering, 2017, University of Toledo

 Recent advances in the development of gallium nitride (GaN) high electron mobility transistor (HEMT) have shown promising results in the application of high frequency power… (more)

Subjects/Keywords: Electrical Engineering; Engineering; Reliability; gate stress; package parasitic inductance; device modeling; GaN degradation; Gallium Nitride; step stress analysis

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tine, Cheikh Abdoulahi, T. (2017). Effects of Gate Stress and Parasitic Package Inductance on the Reliability of GaN HEMTs. (Masters Thesis). University of Toledo. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=toledo1513282720052299

Chicago Manual of Style (16th Edition):

Tine, Cheikh Abdoulahi, Tine. “Effects of Gate Stress and Parasitic Package Inductance on the Reliability of GaN HEMTs.” 2017. Masters Thesis, University of Toledo. Accessed June 16, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1513282720052299.

MLA Handbook (7th Edition):

Tine, Cheikh Abdoulahi, Tine. “Effects of Gate Stress and Parasitic Package Inductance on the Reliability of GaN HEMTs.” 2017. Web. 16 Jun 2019.

Vancouver:

Tine, Cheikh Abdoulahi T. Effects of Gate Stress and Parasitic Package Inductance on the Reliability of GaN HEMTs. [Internet] [Masters thesis]. University of Toledo; 2017. [cited 2019 Jun 16]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1513282720052299.

Council of Science Editors:

Tine, Cheikh Abdoulahi T. Effects of Gate Stress and Parasitic Package Inductance on the Reliability of GaN HEMTs. [Masters Thesis]. University of Toledo; 2017. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1513282720052299


NSYSU

12. Chen, Yu-Chun. Physical Mechanisms and device new application of ZnO-based Thin Film Transistor.

Degree: PhD, Physics, 2013, NSYSU

 Due to the progress of digitized information, a number of studies have demonstrated the application of active-matrix flat panel display, such as ultra-large diaply (60… (more)

Subjects/Keywords: UV sensor; a-ZTO; thin film transistors; a-IGZO; negative bias illumination stress; stability

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APA (6th Edition):

Chen, Y. (2013). Physical Mechanisms and device new application of ZnO-based Thin Film Transistor. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626113-145203

Chicago Manual of Style (16th Edition):

Chen, Yu-Chun. “Physical Mechanisms and device new application of ZnO-based Thin Film Transistor.” 2013. Doctoral Dissertation, NSYSU. Accessed June 16, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626113-145203.

MLA Handbook (7th Edition):

Chen, Yu-Chun. “Physical Mechanisms and device new application of ZnO-based Thin Film Transistor.” 2013. Web. 16 Jun 2019.

Vancouver:

Chen Y. Physical Mechanisms and device new application of ZnO-based Thin Film Transistor. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2019 Jun 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626113-145203.

Council of Science Editors:

Chen Y. Physical Mechanisms and device new application of ZnO-based Thin Film Transistor. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626113-145203


University of Connecticut

13. Kayam, Niranjan R. Experimental Analysis on Aging of Integrated Circuits.

Degree: MS, Electrical Engineering, 2011, University of Connecticut

  As we enter into sub-nanometer technologies in order to increase performance of CMOS devices, reliability issues such as negative bias temperature instability (NBTI), hot… (more)

Subjects/Keywords: NBTI; HCI; Reliability; Stress; Nanometer; Burn-in; frequency; Negative Bias Temperature Instability; Aging

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APA (6th Edition):

Kayam, N. R. (2011). Experimental Analysis on Aging of Integrated Circuits. (Masters Thesis). University of Connecticut. Retrieved from https://opencommons.uconn.edu/gs_theses/168

Chicago Manual of Style (16th Edition):

Kayam, Niranjan R. “Experimental Analysis on Aging of Integrated Circuits.” 2011. Masters Thesis, University of Connecticut. Accessed June 16, 2019. https://opencommons.uconn.edu/gs_theses/168.

MLA Handbook (7th Edition):

Kayam, Niranjan R. “Experimental Analysis on Aging of Integrated Circuits.” 2011. Web. 16 Jun 2019.

Vancouver:

Kayam NR. Experimental Analysis on Aging of Integrated Circuits. [Internet] [Masters thesis]. University of Connecticut; 2011. [cited 2019 Jun 16]. Available from: https://opencommons.uconn.edu/gs_theses/168.

Council of Science Editors:

Kayam NR. Experimental Analysis on Aging of Integrated Circuits. [Masters Thesis]. University of Connecticut; 2011. Available from: https://opencommons.uconn.edu/gs_theses/168


NSYSU

14. Chen, Bo-Wei. Development and Physical Mechanisms Establishment of Flexible Thin Film Transistors.

Degree: PhD, Electro-Optical Engineering, 2018, NSYSU

 Recently, flexible thin film transistor applications are widely used, both academics and industry have invested considerable resources in research and development. From the application depth… (more)

Subjects/Keywords: Self-Heating Effects; Flexible Display; Low Temperature Polycrystalline Silicon; Mechanical Bending Stress; Negative Bias Temperature Instability; Thermal Expansion Stress

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APA (6th Edition):

Chen, B. (2018). Development and Physical Mechanisms Establishment of Flexible Thin Film Transistors. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615118-154724

Chicago Manual of Style (16th Edition):

Chen, Bo-Wei. “Development and Physical Mechanisms Establishment of Flexible Thin Film Transistors.” 2018. Doctoral Dissertation, NSYSU. Accessed June 16, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615118-154724.

MLA Handbook (7th Edition):

Chen, Bo-Wei. “Development and Physical Mechanisms Establishment of Flexible Thin Film Transistors.” 2018. Web. 16 Jun 2019.

Vancouver:

Chen B. Development and Physical Mechanisms Establishment of Flexible Thin Film Transistors. [Internet] [Doctoral dissertation]. NSYSU; 2018. [cited 2019 Jun 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615118-154724.

Council of Science Editors:

Chen B. Development and Physical Mechanisms Establishment of Flexible Thin Film Transistors. [Doctoral Dissertation]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615118-154724


Cornell University

15. Ito, Satoshi. Bias And Prosody In Japanese Negative Polar Questions .

Degree: 2015, Cornell University

 This dissertation investigates the correlation between prosody and the speaker's bias in Japanese negative polar questions (henceforth, NPQs) without a sentence final particle. I argue… (more)

Subjects/Keywords: Bias; Prosody; Negative Polar Questions

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APA (6th Edition):

Ito, S. (2015). Bias And Prosody In Japanese Negative Polar Questions . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/39410

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ito, Satoshi. “Bias And Prosody In Japanese Negative Polar Questions .” 2015. Thesis, Cornell University. Accessed June 16, 2019. http://hdl.handle.net/1813/39410.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ito, Satoshi. “Bias And Prosody In Japanese Negative Polar Questions .” 2015. Web. 16 Jun 2019.

Vancouver:

Ito S. Bias And Prosody In Japanese Negative Polar Questions . [Internet] [Thesis]. Cornell University; 2015. [cited 2019 Jun 16]. Available from: http://hdl.handle.net/1813/39410.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ito S. Bias And Prosody In Japanese Negative Polar Questions . [Thesis]. Cornell University; 2015. Available from: http://hdl.handle.net/1813/39410

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

16. Jhu, Jhe-Ciou. Physical mechanisms of InGaZnO thin film transistor under ambient environment and electrical stress on reliability for advanced displays.

Degree: PhD, Physics, 2015, NSYSU

 In recent years, along with the evolution of high-tech generation and rapid development of flat panel display industry, widely used in consumer electronic products, such… (more)

Subjects/Keywords: reliability; environmental stability; hot carrier effect; negative bias illumination stress; an oxide semiconductor; thin film transistor; etching stop layer

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APA (6th Edition):

Jhu, J. (2015). Physical mechanisms of InGaZnO thin film transistor under ambient environment and electrical stress on reliability for advanced displays. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631115-014657

Chicago Manual of Style (16th Edition):

Jhu, Jhe-Ciou. “Physical mechanisms of InGaZnO thin film transistor under ambient environment and electrical stress on reliability for advanced displays.” 2015. Doctoral Dissertation, NSYSU. Accessed June 16, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631115-014657.

MLA Handbook (7th Edition):

Jhu, Jhe-Ciou. “Physical mechanisms of InGaZnO thin film transistor under ambient environment and electrical stress on reliability for advanced displays.” 2015. Web. 16 Jun 2019.

Vancouver:

Jhu J. Physical mechanisms of InGaZnO thin film transistor under ambient environment and electrical stress on reliability for advanced displays. [Internet] [Doctoral dissertation]. NSYSU; 2015. [cited 2019 Jun 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631115-014657.

Council of Science Editors:

Jhu J. Physical mechanisms of InGaZnO thin film transistor under ambient environment and electrical stress on reliability for advanced displays. [Doctoral Dissertation]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631115-014657


Penn State University

17. Ryan, Jason Thomas. Magnetic Resonance Observations of Defects Involved in Bias Temperature Instabilities and Stress Induced Leakage Currents in HfO2 and SiO2 Based Metal-Oxide-Silicon Structures.

Degree: PhD, Materials Science and Engineering, 2010, Penn State University

 This study examines underlying physical mechanisms involved in two very important reliability problems in SiO2 based and HfO2 based metal-oxide-silicon technology: the negative bias temperature… (more)

Subjects/Keywords: stress induced leakage current; negative bias temperature instabilitiy; electron spin resonance; spin dependent tunneling; magnetic resonance

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APA (6th Edition):

Ryan, J. T. (2010). Magnetic Resonance Observations of Defects Involved in Bias Temperature Instabilities and Stress Induced Leakage Currents in HfO2 and SiO2 Based Metal-Oxide-Silicon Structures. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/10440

Chicago Manual of Style (16th Edition):

Ryan, Jason Thomas. “Magnetic Resonance Observations of Defects Involved in Bias Temperature Instabilities and Stress Induced Leakage Currents in HfO2 and SiO2 Based Metal-Oxide-Silicon Structures.” 2010. Doctoral Dissertation, Penn State University. Accessed June 16, 2019. https://etda.libraries.psu.edu/catalog/10440.

MLA Handbook (7th Edition):

Ryan, Jason Thomas. “Magnetic Resonance Observations of Defects Involved in Bias Temperature Instabilities and Stress Induced Leakage Currents in HfO2 and SiO2 Based Metal-Oxide-Silicon Structures.” 2010. Web. 16 Jun 2019.

Vancouver:

Ryan JT. Magnetic Resonance Observations of Defects Involved in Bias Temperature Instabilities and Stress Induced Leakage Currents in HfO2 and SiO2 Based Metal-Oxide-Silicon Structures. [Internet] [Doctoral dissertation]. Penn State University; 2010. [cited 2019 Jun 16]. Available from: https://etda.libraries.psu.edu/catalog/10440.

Council of Science Editors:

Ryan JT. Magnetic Resonance Observations of Defects Involved in Bias Temperature Instabilities and Stress Induced Leakage Currents in HfO2 and SiO2 Based Metal-Oxide-Silicon Structures. [Doctoral Dissertation]. Penn State University; 2010. Available from: https://etda.libraries.psu.edu/catalog/10440


Ohio University

18. Liu, Xi. Bayesian Designing and Analysis of Simple Step-Stress Accelerated Life Test with Weibull Lifetime Distribution.

Degree: MS, Industrial and Systems Engineering (Engineering and Technology), 2010, Ohio University

 This thesis develops a Bayesian method to analyze and plan a simple step-stress accelerated life test with Type-I censoring. It is assumed that the failure… (more)

Subjects/Keywords: Industrial Engineering; bayesian approach; step-stress accelerated life test; Gibbs sampling; Type-I censoring; Weibull distribution; Asymptotic Variance

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APA (6th Edition):

Liu, X. (2010). Bayesian Designing and Analysis of Simple Step-Stress Accelerated Life Test with Weibull Lifetime Distribution. (Masters Thesis). Ohio University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1283365980

Chicago Manual of Style (16th Edition):

Liu, Xi. “Bayesian Designing and Analysis of Simple Step-Stress Accelerated Life Test with Weibull Lifetime Distribution.” 2010. Masters Thesis, Ohio University. Accessed June 16, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1283365980.

MLA Handbook (7th Edition):

Liu, Xi. “Bayesian Designing and Analysis of Simple Step-Stress Accelerated Life Test with Weibull Lifetime Distribution.” 2010. Web. 16 Jun 2019.

Vancouver:

Liu X. Bayesian Designing and Analysis of Simple Step-Stress Accelerated Life Test with Weibull Lifetime Distribution. [Internet] [Masters thesis]. Ohio University; 2010. [cited 2019 Jun 16]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1283365980.

Council of Science Editors:

Liu X. Bayesian Designing and Analysis of Simple Step-Stress Accelerated Life Test with Weibull Lifetime Distribution. [Masters Thesis]. Ohio University; 2010. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1283365980

19. Lakhdhar, Hadhemi. Reliability assessment of GaN HEMTs on Si substrate with ultra-short gate dedicated to power applications at frequency above 40 GHz : Evaluation de la fiabilité des HEMTs GaN sur substrat silicium à grille ultra-courte dédiés aux applications de puissance à f > 40 GHz.

Degree: Docteur es, Electronique, 2017, Bordeaux

Ce travail de thèse se concentre sur l'évaluation de la fiabilité des transistors à haute mobilité électronique (HEMT) AlGaN / GaN à grille ultra-courte sur… (more)

Subjects/Keywords: HEMT AlGaN/GaN; Fiabilité; Vieillissement accéléré DC; Aire de sécurité de fonction; Grille ultra-courte; AlGaN/GaN HEMT; Reliability; DC step stress; Safe Operating Area; Ultra-short gate

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APA (6th Edition):

Lakhdhar, H. (2017). Reliability assessment of GaN HEMTs on Si substrate with ultra-short gate dedicated to power applications at frequency above 40 GHz : Evaluation de la fiabilité des HEMTs GaN sur substrat silicium à grille ultra-courte dédiés aux applications de puissance à f > 40 GHz. (Doctoral Dissertation). Bordeaux. Retrieved from http://www.theses.fr/2017BORD0941

Chicago Manual of Style (16th Edition):

Lakhdhar, Hadhemi. “Reliability assessment of GaN HEMTs on Si substrate with ultra-short gate dedicated to power applications at frequency above 40 GHz : Evaluation de la fiabilité des HEMTs GaN sur substrat silicium à grille ultra-courte dédiés aux applications de puissance à f > 40 GHz.” 2017. Doctoral Dissertation, Bordeaux. Accessed June 16, 2019. http://www.theses.fr/2017BORD0941.

MLA Handbook (7th Edition):

Lakhdhar, Hadhemi. “Reliability assessment of GaN HEMTs on Si substrate with ultra-short gate dedicated to power applications at frequency above 40 GHz : Evaluation de la fiabilité des HEMTs GaN sur substrat silicium à grille ultra-courte dédiés aux applications de puissance à f > 40 GHz.” 2017. Web. 16 Jun 2019.

Vancouver:

Lakhdhar H. Reliability assessment of GaN HEMTs on Si substrate with ultra-short gate dedicated to power applications at frequency above 40 GHz : Evaluation de la fiabilité des HEMTs GaN sur substrat silicium à grille ultra-courte dédiés aux applications de puissance à f > 40 GHz. [Internet] [Doctoral dissertation]. Bordeaux; 2017. [cited 2019 Jun 16]. Available from: http://www.theses.fr/2017BORD0941.

Council of Science Editors:

Lakhdhar H. Reliability assessment of GaN HEMTs on Si substrate with ultra-short gate dedicated to power applications at frequency above 40 GHz : Evaluation de la fiabilité des HEMTs GaN sur substrat silicium à grille ultra-courte dédiés aux applications de puissance à f > 40 GHz. [Doctoral Dissertation]. Bordeaux; 2017. Available from: http://www.theses.fr/2017BORD0941

20. Chen, Chang-Chih. System-level modeling and reliability analysis of microprocessor systems.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 Frontend and backend wearout mechanisms are major reliability concerns for modern microprocessors. In this research, a framework which contains modules for negative bias temperature instability… (more)

Subjects/Keywords: Microprocessor; Reliability; Modeling; Negative bias temperature instability; Positive bias temperature instability; Hot carrier injection; Timing analysis; Aging; SRAM; Cache; Gate oxide breakdown; Wearout; Electromigration; Stress-induced voiding; Stress migration; Time-dependent backend dielectric breakdown

…To-Failure xii MUL Multiplier NBTI Negative Bias Temperature Instability NMOS N… …critical wearout mechanisms, namely negative bias temperature instability (NBTI)… …transistor gate oxide breakdown (GOBD), electromigration (EM), stress-induced… …frontend wearout due to negative bias temperature instability (NBTI), positive bias… …Negative bias temperature instability (NBTI) in PMOS devices [42]-[45… 

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APA (6th Edition):

Chen, C. (2014). System-level modeling and reliability analysis of microprocessor systems. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53033

Chicago Manual of Style (16th Edition):

Chen, Chang-Chih. “System-level modeling and reliability analysis of microprocessor systems.” 2014. Doctoral Dissertation, Georgia Tech. Accessed June 16, 2019. http://hdl.handle.net/1853/53033.

MLA Handbook (7th Edition):

Chen, Chang-Chih. “System-level modeling and reliability analysis of microprocessor systems.” 2014. Web. 16 Jun 2019.

Vancouver:

Chen C. System-level modeling and reliability analysis of microprocessor systems. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Jun 16]. Available from: http://hdl.handle.net/1853/53033.

Council of Science Editors:

Chen C. System-level modeling and reliability analysis of microprocessor systems. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/53033

21. Pulido Herrera, Edith. Improving Data Fusion in User Positioning Systems.

Degree: Departament de Llenguatges i Sistemes Informàtics, 2009, Universitat Jaume I

 A fault detection and correction methodology for user positioning systems based on Kalman filtering is presented in this thesis. To develop this methodology, various aspects… (more)

Subjects/Keywords: azimuth bias; step length; chi-square test; causal diagnosis; Kalman filtering; fault detection; pedestrian positioning systems; UWB; IMU; Sistemas de Navegación; 52; 62; 621.3

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APA (6th Edition):

Pulido Herrera, E. (2009). Improving Data Fusion in User Positioning Systems. (Thesis). Universitat Jaume I. Retrieved from http://hdl.handle.net/10803/10485

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pulido Herrera, Edith. “Improving Data Fusion in User Positioning Systems.” 2009. Thesis, Universitat Jaume I. Accessed June 16, 2019. http://hdl.handle.net/10803/10485.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pulido Herrera, Edith. “Improving Data Fusion in User Positioning Systems.” 2009. Web. 16 Jun 2019.

Vancouver:

Pulido Herrera E. Improving Data Fusion in User Positioning Systems. [Internet] [Thesis]. Universitat Jaume I; 2009. [cited 2019 Jun 16]. Available from: http://hdl.handle.net/10803/10485.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pulido Herrera E. Improving Data Fusion in User Positioning Systems. [Thesis]. Universitat Jaume I; 2009. Available from: http://hdl.handle.net/10803/10485

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

22. Walldorf, Björn. Att mäta utmattning med varianter av symbol digit modalities test.

Degree: Psychology, 2018, Umeå University

Hälso- och sjukvården befinner sig under ett allt större tryck av patienter som söker hjälp på grund av utmattningssyndrom. Kognitiva nedsättningar är en kärnkomponent… (more)

Subjects/Keywords: exhaustion disorder; burnout; stress-related mental illness; emotional stroop test; attentional bias; symbol digit modalities test; utmattningssyndrom; burnout; stress-relaterad ohälsa; emotional stroop test; attentional bias; symbol digit modalities test; Psychology; Psykologi

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APA (6th Edition):

Walldorf, B. (2018). Att mäta utmattning med varianter av symbol digit modalities test. (Thesis). Umeå University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-155266

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Walldorf, Björn. “Att mäta utmattning med varianter av symbol digit modalities test.” 2018. Thesis, Umeå University. Accessed June 16, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-155266.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Walldorf, Björn. “Att mäta utmattning med varianter av symbol digit modalities test.” 2018. Web. 16 Jun 2019.

Vancouver:

Walldorf B. Att mäta utmattning med varianter av symbol digit modalities test. [Internet] [Thesis]. Umeå University; 2018. [cited 2019 Jun 16]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-155266.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Walldorf B. Att mäta utmattning med varianter av symbol digit modalities test. [Thesis]. Umeå University; 2018. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-155266

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

23. Bebiche, Sarah. OTFTs de type N à base de semiconducteurs π-conjugués : fabrication, performance et stabilité : N-type OTFTs based on π-conjugated semiconductors : elaboration, performance and stability.

Degree: Docteur es, Électronique, 2015, Rennes 1

L'objectif de ce travail de recherche est l'élaboration et l'optimisation de transistors à effet de champ organiques de type N (OTFTs). Des transistors en structure… (more)

Subjects/Keywords: Semiconducteur organique; Transport de charge; Transistor à effet de champ organique; Stabilité électrique; Organic semiconductors; Thermal evaporation; Organic field effect transistors; Gate bias stress

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APA (6th Edition):

Bebiche, S. (2015). OTFTs de type N à base de semiconducteurs π-conjugués : fabrication, performance et stabilité : N-type OTFTs based on π-conjugated semiconductors : elaboration, performance and stability. (Doctoral Dissertation). Rennes 1. Retrieved from http://www.theses.fr/2015REN1S105

Chicago Manual of Style (16th Edition):

Bebiche, Sarah. “OTFTs de type N à base de semiconducteurs π-conjugués : fabrication, performance et stabilité : N-type OTFTs based on π-conjugated semiconductors : elaboration, performance and stability.” 2015. Doctoral Dissertation, Rennes 1. Accessed June 16, 2019. http://www.theses.fr/2015REN1S105.

MLA Handbook (7th Edition):

Bebiche, Sarah. “OTFTs de type N à base de semiconducteurs π-conjugués : fabrication, performance et stabilité : N-type OTFTs based on π-conjugated semiconductors : elaboration, performance and stability.” 2015. Web. 16 Jun 2019.

Vancouver:

Bebiche S. OTFTs de type N à base de semiconducteurs π-conjugués : fabrication, performance et stabilité : N-type OTFTs based on π-conjugated semiconductors : elaboration, performance and stability. [Internet] [Doctoral dissertation]. Rennes 1; 2015. [cited 2019 Jun 16]. Available from: http://www.theses.fr/2015REN1S105.

Council of Science Editors:

Bebiche S. OTFTs de type N à base de semiconducteurs π-conjugués : fabrication, performance et stabilité : N-type OTFTs based on π-conjugated semiconductors : elaboration, performance and stability. [Doctoral Dissertation]. Rennes 1; 2015. Available from: http://www.theses.fr/2015REN1S105


University of Arizona

24. McGrogan, Harold James, Jr. The determination of cultural item bias in the California Achievement Tests.

Degree: 1989, University of Arizona

 A three parameter model of Item Response Theory reported by Lord (1968, 1980) was used to determine whether cultural item bias existed in the Reading… (more)

Subjects/Keywords: Test bias.

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APA (6th Edition):

McGrogan, Harold James, J. (1989). The determination of cultural item bias in the California Achievement Tests. (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/184721

Chicago Manual of Style (16th Edition):

McGrogan, Harold James, Jr. “The determination of cultural item bias in the California Achievement Tests. ” 1989. Doctoral Dissertation, University of Arizona. Accessed June 16, 2019. http://hdl.handle.net/10150/184721.

MLA Handbook (7th Edition):

McGrogan, Harold James, Jr. “The determination of cultural item bias in the California Achievement Tests. ” 1989. Web. 16 Jun 2019.

Vancouver:

McGrogan, Harold James J. The determination of cultural item bias in the California Achievement Tests. [Internet] [Doctoral dissertation]. University of Arizona; 1989. [cited 2019 Jun 16]. Available from: http://hdl.handle.net/10150/184721.

Council of Science Editors:

McGrogan, Harold James J. The determination of cultural item bias in the California Achievement Tests. [Doctoral Dissertation]. University of Arizona; 1989. Available from: http://hdl.handle.net/10150/184721


University of Texas – Austin

25. Griffin, Nicholas Robert. The effects of depressive symptoms on memory distortion for orthographic associates : a behavioral and EEG investigation.

Degree: Psychology, 2017, University of Texas – Austin

 While everyone is prone to memory errors, individuals with cognitive biases like negative attention bias may differ in their susceptibility to memory distortion. Negative attention… (more)

Subjects/Keywords: Memory distortion; Depression; EEG; Negative attention bias

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APA (6th Edition):

Griffin, N. R. (2017). The effects of depressive symptoms on memory distortion for orthographic associates : a behavioral and EEG investigation. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/62951

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Griffin, Nicholas Robert. “The effects of depressive symptoms on memory distortion for orthographic associates : a behavioral and EEG investigation.” 2017. Thesis, University of Texas – Austin. Accessed June 16, 2019. http://hdl.handle.net/2152/62951.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Griffin, Nicholas Robert. “The effects of depressive symptoms on memory distortion for orthographic associates : a behavioral and EEG investigation.” 2017. Web. 16 Jun 2019.

Vancouver:

Griffin NR. The effects of depressive symptoms on memory distortion for orthographic associates : a behavioral and EEG investigation. [Internet] [Thesis]. University of Texas – Austin; 2017. [cited 2019 Jun 16]. Available from: http://hdl.handle.net/2152/62951.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Griffin NR. The effects of depressive symptoms on memory distortion for orthographic associates : a behavioral and EEG investigation. [Thesis]. University of Texas – Austin; 2017. Available from: http://hdl.handle.net/2152/62951

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New Mexico

26. Mee, Jesse. FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY.

Degree: Electrical and Computer Engineering, 2011, University of New Mexico

Negative Bias Temperature Instability (NBTI) in silicon based metal-oxide-semiconductor-field-effect-transistors (MOSFETs) has been recognized as a critical reliability issue for advanced space qualified electronics. The phenomenon… (more)

Subjects/Keywords: NBTI; Negative Bias Temperature Instability; Charge Trapping

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APA (6th Edition):

Mee, J. (2011). FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY. (Masters Thesis). University of New Mexico. Retrieved from http://hdl.handle.net/1928/12052

Chicago Manual of Style (16th Edition):

Mee, Jesse. “FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY.” 2011. Masters Thesis, University of New Mexico. Accessed June 16, 2019. http://hdl.handle.net/1928/12052.

MLA Handbook (7th Edition):

Mee, Jesse. “FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY.” 2011. Web. 16 Jun 2019.

Vancouver:

Mee J. FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY. [Internet] [Masters thesis]. University of New Mexico; 2011. [cited 2019 Jun 16]. Available from: http://hdl.handle.net/1928/12052.

Council of Science Editors:

Mee J. FUNDAMENTAL ISSUE IN SPACE ELECTRONICS RELIABILITY: NEGATIVE BIAS TEMPERATURE INSTABILITY. [Masters Thesis]. University of New Mexico; 2011. Available from: http://hdl.handle.net/1928/12052


Rochester Institute of Technology

27. Suresh Bharadwaj, Anish. On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors.

Degree: MS, Microelectronic Engineering, 2018, Rochester Institute of Technology

  The role of amorphous IGZO (Indium Gallium Zinc Oxide) in Thin Film Transistors (TFT) has found its application in emerging display technologies such as… (more)

Subjects/Keywords: Bias stress; IGZO; TFT

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APA (6th Edition):

Suresh Bharadwaj, A. (2018). On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/9962

Chicago Manual of Style (16th Edition):

Suresh Bharadwaj, Anish. “On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors.” 2018. Masters Thesis, Rochester Institute of Technology. Accessed June 16, 2019. https://scholarworks.rit.edu/theses/9962.

MLA Handbook (7th Edition):

Suresh Bharadwaj, Anish. “On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors.” 2018. Web. 16 Jun 2019.

Vancouver:

Suresh Bharadwaj A. On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors. [Internet] [Masters thesis]. Rochester Institute of Technology; 2018. [cited 2019 Jun 16]. Available from: https://scholarworks.rit.edu/theses/9962.

Council of Science Editors:

Suresh Bharadwaj A. On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors. [Masters Thesis]. Rochester Institute of Technology; 2018. Available from: https://scholarworks.rit.edu/theses/9962


University of Illinois – Urbana-Champaign

28. Finy, M. Sima. Behavioral disinhibition and cortisol reactivity as a function of psychosocial stress and personality in adolescents.

Degree: MA, 0338, 2012, University of Illinois – Urbana-Champaign

 Although the developmental period of adolescence is characterized by impulsive and risk-taking behaviors, explanations for the range of behavioral disinhibition across adolescents that include biological,… (more)

Subjects/Keywords: Impulsivity; risk-taking; Cortisol; Constraint (CON); Negative Emotionality (NEM); Multidimensional Personality Questionnaire (MPQ); Stress; Adolescents; Behavioral Disinhibition; Trier Social Stress Test for Children (TSST-C)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Finy, M. S. (2012). Behavioral disinhibition and cortisol reactivity as a function of psychosocial stress and personality in adolescents. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/34576

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Finy, M Sima. “Behavioral disinhibition and cortisol reactivity as a function of psychosocial stress and personality in adolescents.” 2012. Thesis, University of Illinois – Urbana-Champaign. Accessed June 16, 2019. http://hdl.handle.net/2142/34576.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Finy, M Sima. “Behavioral disinhibition and cortisol reactivity as a function of psychosocial stress and personality in adolescents.” 2012. Web. 16 Jun 2019.

Vancouver:

Finy MS. Behavioral disinhibition and cortisol reactivity as a function of psychosocial stress and personality in adolescents. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Jun 16]. Available from: http://hdl.handle.net/2142/34576.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Finy MS. Behavioral disinhibition and cortisol reactivity as a function of psychosocial stress and personality in adolescents. [Thesis]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/34576

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Georgia

29. Bradford, Heather Lynn. Region-specific analyses of beef cattle growth and implementation of single-step genomic blup with many genotyped animals.

Degree: PhD, Animal Science, 2017, University of Georgia

 Beef cattle are raised in a wide range of environmental conditions in the United States. Producers use calving seasons to help match the cows’ nutritional… (more)

Subjects/Keywords: genomic selection; heat stress; single-step GBLUP

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bradford, H. L. (2017). Region-specific analyses of beef cattle growth and implementation of single-step genomic blup with many genotyped animals. (Doctoral Dissertation). University of Georgia. Retrieved from http://hdl.handle.net/10724/37629

Chicago Manual of Style (16th Edition):

Bradford, Heather Lynn. “Region-specific analyses of beef cattle growth and implementation of single-step genomic blup with many genotyped animals.” 2017. Doctoral Dissertation, University of Georgia. Accessed June 16, 2019. http://hdl.handle.net/10724/37629.

MLA Handbook (7th Edition):

Bradford, Heather Lynn. “Region-specific analyses of beef cattle growth and implementation of single-step genomic blup with many genotyped animals.” 2017. Web. 16 Jun 2019.

Vancouver:

Bradford HL. Region-specific analyses of beef cattle growth and implementation of single-step genomic blup with many genotyped animals. [Internet] [Doctoral dissertation]. University of Georgia; 2017. [cited 2019 Jun 16]. Available from: http://hdl.handle.net/10724/37629.

Council of Science Editors:

Bradford HL. Region-specific analyses of beef cattle growth and implementation of single-step genomic blup with many genotyped animals. [Doctoral Dissertation]. University of Georgia; 2017. Available from: http://hdl.handle.net/10724/37629


University of Notre Dame

30. Yuzhe Liu. Analysis and Design of Systems with a Non-negative Impulse Response</h1>.

Degree: PhD, Electrical Engineering, 2011, University of Notre Dame

  Non-negativity of the impulse response of a system (a.k.a. a monotonic step response system) is a widely required feature in many industrial applications. Although… (more)

Subjects/Keywords: monotonic step response; non-negative impulse response; filter design

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Liu, Y. (2011). Analysis and Design of Systems with a Non-negative Impulse Response</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/m039k358k1r

Chicago Manual of Style (16th Edition):

Liu, Yuzhe. “Analysis and Design of Systems with a Non-negative Impulse Response</h1>.” 2011. Doctoral Dissertation, University of Notre Dame. Accessed June 16, 2019. https://curate.nd.edu/show/m039k358k1r.

MLA Handbook (7th Edition):

Liu, Yuzhe. “Analysis and Design of Systems with a Non-negative Impulse Response</h1>.” 2011. Web. 16 Jun 2019.

Vancouver:

Liu Y. Analysis and Design of Systems with a Non-negative Impulse Response</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2011. [cited 2019 Jun 16]. Available from: https://curate.nd.edu/show/m039k358k1r.

Council of Science Editors:

Liu Y. Analysis and Design of Systems with a Non-negative Impulse Response</h1>. [Doctoral Dissertation]. University of Notre Dame; 2011. Available from: https://curate.nd.edu/show/m039k358k1r

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