subject:(Nanowire)

Penn State University

1. Kim, Jaekyun. Deterministic Assembly of Functional Nanodevices onto Silicon Circuits.

Degree: PhD, Electrical Engineering, 2010, Penn State University

URL: https://etda.libraries.psu.edu/catalog/10557

► Bottom-up integration of nanostructures offers a promising method to achieve material diversity for chemical and biological applications, often considered unattainable by conventional top-down fabrication. Thus,… (more)

▼ Bottom-up integration of nanostructures offers a promising method to achieve material diversity for chemical and biological applications, often considered unattainable by conventional top-down fabrication. Thus, deterministic integration of nanostructures such as nanowires and nanoshell spheres on silicon CMOS circuitry represents a significant step toward cross-reactive silicon CMOS chip where different types of off-chip synthesized sensory materials are merged. Applying this deterministic bottom-up integration to substrate or circuit eliminates the constraints of thermal budget, chemical compatibility, lattice mismatch between nanostructures to be assembled and substrate. This thesis discusses a deterministic assembly strategy for nanowires and spheres and their integrations onto silicon CMOS circuitry for electronic microsystem applications. The nanowire assembly structure was designed to create a dielectrophoretic attractive force toward the electrode gap, resulting in uniformly-spaced rhodium nanowire array due to mutual electrostatic interaction between assembled nanowires. Systematic investigation reagarding nanowire array formation reveals that stronger long-range dielectrophoretic forces attract more nanowires at the electrode gap, forming less-spaced array while stronger electrostatic nanowire interaction results in the larger spacing within the array. Thus, their interplay tends to determine the average spacing between the assembled nanowires. Based on understanding the electrostatistic interaction between assembled nanowires, lithographically defined wells with a localized electric field determines the final alignment position of assembled rhodium nanowires on a substrate. Post-assembly process using electrodeposition and subsequent lift-off process completes monolithic integration of rhodium nanowires while preserving nanowires assembled only within the recessed region. Individual rhodium nanowire assembly yields exceeding 95% were obtained at nanowire densities >105 /cm2 with a submicron registration accuracy. PEDOT/ClO4 nanowire chemical sensors are also fabricated to demonstrate functional nanowire integration for on-chip sensing. This thesis also describes a bottom-up strategy for fabricating ultra-high-density cross-point sensor arrays (>107 elements/cm2) that uses fluidic assembly to position the functional nanoshell microspheres between lithographically-defined electrodes on-chip. Cross-point array structure is designed to accommodate single spherical particles at each cross-point and make them electrically connected to upper and lower access electrodes. As proof-of-concept, PEDOT nanoshell microspheres are assembled to fabricate chemical sensor devices for on-chip application. Individually addressing each PEDOT nanoshell sphere enables monitoring of an array of sphere for conductance change by chemical gas, solvent, humidity. Due to upper and lower electrodes format and intrinsic form factor of spheres, it is advantageous to achieve high integration density compared to nanowires with a high…

Subjects/Keywords: Nanotechnology; Nanowire

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APA (6^th Edition):

Kim, J. (2010). Deterministic Assembly of Functional Nanodevices onto Silicon Circuits. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/10557

Chicago Manual of Style (16^th Edition):

Kim, Jaekyun. “Deterministic Assembly of Functional Nanodevices onto Silicon Circuits.” 2010. Doctoral Dissertation, Penn State University. Accessed July 21, 2019. https://etda.libraries.psu.edu/catalog/10557.

MLA Handbook (7^th Edition):

Kim, Jaekyun. “Deterministic Assembly of Functional Nanodevices onto Silicon Circuits.” 2010. Web. 21 Jul 2019.

Vancouver:

Kim J. Deterministic Assembly of Functional Nanodevices onto Silicon Circuits. [Internet] [Doctoral dissertation]. Penn State University; 2010. [cited 2019 Jul 21]. Available from: https://etda.libraries.psu.edu/catalog/10557.

Council of Science Editors:

Kim J. Deterministic Assembly of Functional Nanodevices onto Silicon Circuits. [Doctoral Dissertation]. Penn State University; 2010. Available from: https://etda.libraries.psu.edu/catalog/10557

University of Houston

2. Debnath, Ananya. The Effect of Nitrogen Plasma Species on the Growth Morphology and Mechanism of Gan Nanocolumns Deposited by Plasma-Assisted Molecular-Beam Epitaxy.

Degree: Physics, Department of, 2015, University of Houston

URL: http://hdl.handle.net/10657/2003

► This dissertation addresses GaN nanocolumns (NCs) growth on Si (111) via a SixNy intermediate layer by radio-frequency molecular-beam epitaxy. In the existing literature, the GaN… (more)

▼ This dissertation addresses GaN nanocolumns (NCs) growth on Si (111) via a SixNy intermediate layer by radio-frequency molecular-beam epitaxy. In the existing literature, the GaN NC’s morphology was shown to be influenced by growth parameters such as Ga flux, substrate type, growth temperature, buffer layer types, sticking coefficient of Ga adatoms in different planes, etc. The one aspect that so far has been understudied is the role of the plasma-generated species. Due to the multiple states and concentrations of the available excited species in a nitrogen plasma, it has been difficult to quantify and correlate their role with the morphology of the resulting NCs. To address this issue, the nitrogen plasma source has been investigated by optical emission spectroscopy, in order to quantify the relative abundances of the molecular and atomic nitrogen species, and then to examine the effect of these species on the growth morphology and mechanism of GaN NCs grown on Si (111). The length, diameter, and density of NCs were analyzed as a function of the nitrogen species Cmol/Cat concentration ratio during epitaxy. Growth rate and diameter are found to increase and density to decrease up to a certain value of Cmol/Cat nitrogen ratio but plateaued beyond that. The effect of the Cmol/Cat nitrogen ratio seems to be an additional factor that has to be taken into account in the modeling of GaN NC growth. The structural and optical characterization of GaN NCs by PL, XRD, and RHEED show that GaN NC samples are strained. This strain decreases with increasing Cmol/Cat ratio. The growth mechanism of the GaN NCs was investigated in terms of Cmol/Cat ratio using the SEM and TEM results. Under our growth conditions, the NC growth appeared to be driven by direct impingement of adatoms rather than diffusion. The NCs have a core shell structure where the difference in growth rate of shell and core diminishes as Cmol/Cat ratio increases, which results in NCs with different radial growth rates. Advisors/Committee Members: Varghese, Oomman (advisor), Bensaoula, Abdelhak (committee member), Wood, Lowell T. (committee member), Stokes, Donna (committee member), Forrest, Rebecca L. (committee member), Trombetta, Len (committee member).

Subjects/Keywords: Epitaxy; nanowire

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APA (6^th Edition):

Debnath, A. (2015). The Effect of Nitrogen Plasma Species on the Growth Morphology and Mechanism of Gan Nanocolumns Deposited by Plasma-Assisted Molecular-Beam Epitaxy. (Thesis). University of Houston. Retrieved from http://hdl.handle.net/10657/2003

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Debnath, Ananya. “The Effect of Nitrogen Plasma Species on the Growth Morphology and Mechanism of Gan Nanocolumns Deposited by Plasma-Assisted Molecular-Beam Epitaxy.” 2015. Thesis, University of Houston. Accessed July 21, 2019. http://hdl.handle.net/10657/2003.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Debnath, Ananya. “The Effect of Nitrogen Plasma Species on the Growth Morphology and Mechanism of Gan Nanocolumns Deposited by Plasma-Assisted Molecular-Beam Epitaxy.” 2015. Web. 21 Jul 2019.

Vancouver:

Debnath A. The Effect of Nitrogen Plasma Species on the Growth Morphology and Mechanism of Gan Nanocolumns Deposited by Plasma-Assisted Molecular-Beam Epitaxy. [Internet] [Thesis]. University of Houston; 2015. [cited 2019 Jul 21]. Available from: http://hdl.handle.net/10657/2003.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Debnath A. The Effect of Nitrogen Plasma Species on the Growth Morphology and Mechanism of Gan Nanocolumns Deposited by Plasma-Assisted Molecular-Beam Epitaxy. [Thesis]. University of Houston; 2015. Available from: http://hdl.handle.net/10657/2003

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Waterloo

3. Vafaei, Arash. Simple, economical methods for electrical access to nanostructures used for characterizing and welding individual silver nanowires.

Degree: 2013, University of Waterloo

URL: http://hdl.handle.net/10012/7825

► Elongated nanostructures have attracted a great deal of interest due to unique optical, electrical and physical properties. In particular, silver nanowires and nanobeams have proven… (more)

▼ Elongated nanostructures have attracted a great deal of interest due to unique optical, electrical and physical properties. In particular, silver nanowires and nanobeams have proven to be top contenders for a variety of applications. Due to their nano-sized dimensions, however, electrical access to individual nanowires is difficult and expensive. Here, a simple and economical procedure was designed to electrically contact small elongated structures using common facilities available at most universities. A common lithographic procedure is used to pattern gold pads and electrodes on top of nanowires already dispersed on a substrate. This process is tested by first characterizing, using a 4-point-probe measurement, a novel nanobeam created by fusing silver nanodisks. The resistivity of the nanobeams was found to be as low as 2.7x10^−8 Ω·m, which is only slightly above that of bulk silver. These measurements corroborate modeling done by another group that the nanodisks align to create a nearly continuous crystal rather than disjointed grains. In the second application, Joule-heating was used to actualize a reliable weld between silver nanowires synthesized using the polyol method. The nanowires were situated in series between two metal pads, and a procedure was designed to use electrical current to break down intermediate layers without destroying the nanowires themselves. In the last enterprise, individual silver nanowires were isolated between two gold pads and then using the same electrical recipe used for welding nanowires, the contact resistance was reduced to a negligible portion of its original value. It was found that due to the reduction in contact resistance, the 2-point-probe resistivity of the nanowire was similar to those conducted using 4 probes. The invented procedure can thus allow accurate resistivity measurements of individual metal nanowires to be done with only 2 contacts rather than 4, thereby simplifying contact fabrication and allowing appropriate contacts to be deposited on nanowires as short as 4 μm using standard photolithography.

Subjects/Keywords: nanowire; nanowelding

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APA (6^th Edition):

Vafaei, A. (2013). Simple, economical methods for electrical access to nanostructures used for characterizing and welding individual silver nanowires. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/7825

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Vafaei, Arash. “Simple, economical methods for electrical access to nanostructures used for characterizing and welding individual silver nanowires.” 2013. Thesis, University of Waterloo. Accessed July 21, 2019. http://hdl.handle.net/10012/7825.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Vafaei, Arash. “Simple, economical methods for electrical access to nanostructures used for characterizing and welding individual silver nanowires.” 2013. Web. 21 Jul 2019.

Vancouver:

Vafaei A. Simple, economical methods for electrical access to nanostructures used for characterizing and welding individual silver nanowires. [Internet] [Thesis]. University of Waterloo; 2013. [cited 2019 Jul 21]. Available from: http://hdl.handle.net/10012/7825.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vafaei A. Simple, economical methods for electrical access to nanostructures used for characterizing and welding individual silver nanowires. [Thesis]. University of Waterloo; 2013. Available from: http://hdl.handle.net/10012/7825

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Le, Son T. GERMANIUM AND SIGE NANOWIRE TUNNELING TRANSISTORS AND SOLAR CELLS.

Degree: PhD, Physics, 2014, Brown University

URL: https://repository.library.brown.edu/studio/item/bdr:386127/

► As the CMOS downscaling continues, the requirements for lower power supply voltage and power consumption become more stringent. New device operating principles and new material… (more)

Subjects/Keywords: Germanium nanowire

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APA (6^th Edition):

Le, S. T. (2014). GERMANIUM AND SIGE NANOWIRE TUNNELING TRANSISTORS AND SOLAR CELLS. (Doctoral Dissertation). Brown University. Retrieved from https://repository.library.brown.edu/studio/item/bdr:386127/

Chicago Manual of Style (16^th Edition):

Le, Son T. “GERMANIUM AND SIGE NANOWIRE TUNNELING TRANSISTORS AND SOLAR CELLS.” 2014. Doctoral Dissertation, Brown University. Accessed July 21, 2019. https://repository.library.brown.edu/studio/item/bdr:386127/.

MLA Handbook (7^th Edition):

Le, Son T. “GERMANIUM AND SIGE NANOWIRE TUNNELING TRANSISTORS AND SOLAR CELLS.” 2014. Web. 21 Jul 2019.

Vancouver:

Le ST. GERMANIUM AND SIGE NANOWIRE TUNNELING TRANSISTORS AND SOLAR CELLS. [Internet] [Doctoral dissertation]. Brown University; 2014. [cited 2019 Jul 21]. Available from: https://repository.library.brown.edu/studio/item/bdr:386127/.

Council of Science Editors:

Le ST. GERMANIUM AND SIGE NANOWIRE TUNNELING TRANSISTORS AND SOLAR CELLS. [Doctoral Dissertation]. Brown University; 2014. Available from: https://repository.library.brown.edu/studio/item/bdr:386127/

5. Hsu, Chih-Hsun. Realization of New Form of Carbon-Diamond Nanowire – Synthesis, Characterization and Applications.

Degree: PhD, Electrical Science and Computer Engineering, 2010, Brown University

URL: https://repository.library.brown.edu/studio/item/bdr:11151/

► This dissertation focuses on the synthesis and validation of a new form of carbon, diamond nanowire, which was grown in an atmospheric pressure chemical vapor… (more)

Subjects/Keywords: Diamond Nanowire

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APA (6^th Edition):

Hsu, C. (2010). Realization of New Form of Carbon-Diamond Nanowire – Synthesis, Characterization and Applications. (Doctoral Dissertation). Brown University. Retrieved from https://repository.library.brown.edu/studio/item/bdr:11151/

Chicago Manual of Style (16^th Edition):

Hsu, Chih-Hsun. “Realization of New Form of Carbon-Diamond Nanowire – Synthesis, Characterization and Applications.” 2010. Doctoral Dissertation, Brown University. Accessed July 21, 2019. https://repository.library.brown.edu/studio/item/bdr:11151/.

MLA Handbook (7^th Edition):

Hsu, Chih-Hsun. “Realization of New Form of Carbon-Diamond Nanowire – Synthesis, Characterization and Applications.” 2010. Web. 21 Jul 2019.

Vancouver:

Hsu C. Realization of New Form of Carbon-Diamond Nanowire – Synthesis, Characterization and Applications. [Internet] [Doctoral dissertation]. Brown University; 2010. [cited 2019 Jul 21]. Available from: https://repository.library.brown.edu/studio/item/bdr:11151/.

Council of Science Editors:

Hsu C. Realization of New Form of Carbon-Diamond Nanowire – Synthesis, Characterization and Applications. [Doctoral Dissertation]. Brown University; 2010. Available from: https://repository.library.brown.edu/studio/item/bdr:11151/

6. Hui, Ho Yee. Understand and advancing of semiconductor nanowire synthesis.

Degree: PhD, Chemical and Biomolecular Engineering, 2017, Georgia Tech

URL: http://hdl.handle.net/1853/58314

► Semiconductor nanowires (NWs) have become an indispensable nanoscale platform for a broad range of electronic, photonic, and energy conversion applications. Among all growth technique, the… (more)

Subjects/Keywords: Semiconductor nanowire; Nanomaterial

11 more images…

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APA (6^th Edition):

Hui, H. Y. (2017). Understand and advancing of semiconductor nanowire synthesis. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58314

Chicago Manual of Style (16^th Edition):

Hui, Ho Yee. “Understand and advancing of semiconductor nanowire synthesis.” 2017. Doctoral Dissertation, Georgia Tech. Accessed July 21, 2019. http://hdl.handle.net/1853/58314.

MLA Handbook (7^th Edition):

Hui, Ho Yee. “Understand and advancing of semiconductor nanowire synthesis.” 2017. Web. 21 Jul 2019.

Vancouver:

Hui HY. Understand and advancing of semiconductor nanowire synthesis. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2019 Jul 21]. Available from: http://hdl.handle.net/1853/58314.

Council of Science Editors:

Hui HY. Understand and advancing of semiconductor nanowire synthesis. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/58314

Penn State University

7. Winter, Christopher Aylwin. Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach.

Degree: MS, Engineering Science, 2011, Penn State University

URL: https://etda.libraries.psu.edu/catalog/11658

► For nearly a decade silicon nanowires have been the subject of intense research. Future integration of silicon nanowires into commercial devices requires the development and… (more)

▼ For nearly a decade silicon nanowires have been the subject of intense research. Future integration of silicon nanowires into commercial devices requires the development and further refinement of methods for synthesizing and assembling these nanowires into densely packed rational structures with high accuracy and repeatability. Current methods have two broad classifications: “grow-and-place” and “grow-in-place”. The former procedure involves forming the nanowires away from their final orientation, harvesting them from this growth area, and finally placing them in desired positions. The latter procedure sidesteps the problems associated with the harvesting and placement steps of the “grow-and-place” method by forming the nanowires in their final preferred arrangement. In this thesis, we propose a novel self-assembling variation of the “grow-in-place” approach for SiNW growth where the interfacial area of the nanochannel template interface can be formed out of various materials. This research has improved on our group’s previous in-template “grow-in-place” approach by growing SiNWs with smooth morphology and good electrical properties upon partial exposure while still retaining the benefits of the original “grow-in-place” approach, including good control of the SiNW size, number, orientation, position, and shape. The SiNWs grown using this approach were found to be morphologically smooth, composed of crystalline silicon and exhibited good electrical characteristics. Additionally, in this thesis we explore the use of a metal adhesion layer as a means of controlling SiNW electrical characteristics. Specifically, this thesis compared iii electrical characteristics of SiNWs grown using aluminum or titanium as an adhesion layer versus SiNWs grown without an adhesion layer and found that the SiNWs grown with aluminum or titanium as an adhesion layer were, on average, 6 or 9 times, respectively, more conductive than the SiNWs grown without an adhesion layer. Finally, this thesis presents evidence that nanowires grown using built-in platinum contacts form in a dual-material structure. This evidence is in the form of high- magnification FESEM images. It is suggested that, in the inter-contact region, the platinum silicide grew as the “shell” of the nanowire structure and that the core remained silicon because of the physical configuration of the nanochannel.

Subjects/Keywords: silicon nanowire; growth

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APA (6^th Edition):

Winter, C. A. (2011). Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach. (Masters Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/11658

Chicago Manual of Style (16^th Edition):

Winter, Christopher Aylwin. “Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach.” 2011. Masters Thesis, Penn State University. Accessed July 21, 2019. https://etda.libraries.psu.edu/catalog/11658.

MLA Handbook (7^th Edition):

Winter, Christopher Aylwin. “Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach.” 2011. Web. 21 Jul 2019.

Vancouver:

Winter CA. Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach. [Internet] [Masters thesis]. Penn State University; 2011. [cited 2019 Jul 21]. Available from: https://etda.libraries.psu.edu/catalog/11658.

Council of Science Editors:

Winter CA. Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach. [Masters Thesis]. Penn State University; 2011. Available from: https://etda.libraries.psu.edu/catalog/11658

University of Southern California

8. Madaria, Anuj Rahul. Synthesis, characterization and application of metal and semiconductor nanowires.

Degree: PhD, Materials Science and Engineering, 2012, University of Southern California

URL: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6287

► Nanostructured materials such as nanowires have attracted significant attention in the past two decades. Both metallic and semiconducting nanowires have been demonstrated as important building… (more)

▼ Nanostructured materials such as nanowires have attracted significant attention in the past two decades. Both metallic and semiconducting nanowires have been demonstrated as important building blocks for numerous electronic and optoelectronic device applications. In this thesis, we have demonstrated a scalable route for synthesizing vertically aligned semiconducting nanowires using nanosphere lithography (NSL) technique in combination with selected area metal organic chemical vapor deposition (SA-MOCVD). Comparable optical properties were observed between the nanowires produced by NSL patterning technique and nanowires produced by using more expensive and slow electron beam lithography. We have also used capacitance-voltage measurement technique to determine the doping level in these nanowire arrays. In metallic nanowires, we have demonstrated fabrication of high performance transparent conductive electrodes by using Ag nanowires and proposed a technique to synthesis thin Ag nanowires which can have applications in various optoelectronic devices. ❧ This dissertation describes the above-mentioned aspects in detail and accordingly consists of seven chapters. Following an overview and an introduction of fundamental knowledge of nanolithography and transparent conductive electrodes in Chapter 1, Chapter 2 discusses the scalable nanosphere lithography patterning and selected area growth of vertically aligned GaAs nanowire arrays, a route towards optimized optical absorption and reflection. ❧ Chapter 3 discusses the continued work on GaAs nanowire array and employs the use of capacitance-voltage measurement technique to determine the doping level of these nanowires which is important for using these nanowires for fabrication of any electronic devices. ❧ Chapter 4 deals with an important issue of replacement of traditional ITO as a transparent conductive electrode (TCE) for optoelectronic devices. There is a need for replacement of ITO due to several drawback associated with ITO as will be discussed in detail in the chapter. We demonstrate the viability of silver nanowire based random network film as a potential replacement. We achieve remarkable performance in terms of sheet resistance and transparency which rivals that of ITO, supporting a very strong case for Ag nanowire film. We combine traditional spray coating technique with novel Ag nanowires to fabricate high performance TCE. In chapter 5, we further improve the performance of the TCE produced by Ag nanowires by using a dry transfer technique demonstrating a performance comparable to ITO and much better than other potential candidates that can be used as TCE. ❧ In chapter 6 we addressed an important issue associated with using Ag nanowires as a future candidate for TCE by proposing a technique to synthesis thin Ag nanowires which can find application in optoelectronic device. ❧ Finally in chapter 7, we conclude by discussing the future directions and work that needs to be done in order to carry forward the advance made in this thesis. Advisors/Committee Members: Zhou, Chongwu (Committee Chair), Dapkus, Paul Daniel (Committee Member), Goo, Edward (Committee Member).

Subjects/Keywords: nanowire; semiconductor; metal

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APA (6^th Edition):

Madaria, A. R. (2012). Synthesis, characterization and application of metal and semiconductor nanowires. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6287

Chicago Manual of Style (16^th Edition):

Madaria, Anuj Rahul. “Synthesis, characterization and application of metal and semiconductor nanowires.” 2012. Doctoral Dissertation, University of Southern California. Accessed July 21, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6287.

MLA Handbook (7^th Edition):

Madaria, Anuj Rahul. “Synthesis, characterization and application of metal and semiconductor nanowires.” 2012. Web. 21 Jul 2019.

Vancouver:

Madaria AR. Synthesis, characterization and application of metal and semiconductor nanowires. [Internet] [Doctoral dissertation]. University of Southern California; 2012. [cited 2019 Jul 21]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6287.

Council of Science Editors:

Madaria AR. Synthesis, characterization and application of metal and semiconductor nanowires. [Doctoral Dissertation]. University of Southern California; 2012. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6287

Victoria University of Wellington

9. Burke-Govey, Conor Patrick. ZnO nanowires and their application in field-effect transistors.

Degree: 2018, Victoria University of Wellington

URL: http://hdl.handle.net/10063/6927

► ZnO nanowires have shown great promise as a semiconducting material for a variety of different electronic applications at the nanoscale, and can be easily synthesised… (more)

▼ ZnO nanowires have shown great promise as a semiconducting material for a variety of different electronic applications at the nanoscale, and can be easily synthesised at low temperatures using the hydrothermal growth method. However, efforts to reliably produce field-effect transistors (FETs) using ZnO nanowires have been hampered by excessive charge carriers, requiring high temperature annealing (≥400°C) at the expense of the low-temperature synthesis before field dependence is achieved. This thesis presents hydrothermally synthesised ZnO nanowires which can effectively be used as FETs in dry and liquid environments without requiring any annealing or post-growth processing. The role of polyethylenimine (PEI) in the hydrothermal growth of vertical ZnO nanowires is thoroughly investigated. PEI is a polymer used to increase the aspect ratio of ZnO nanowires, but the molecular weight of the polymer and interactions with other growth precursors are often overlooked. Using 4 mM of PEI(MW = 1300 g/mol) results in hierarchical nanowires, consisting of large primary nanowires which abruptly terminate in thinner secondary nanowires. The secondary nanowires, with lengths of up to 10 m and diameters below 50 nm, are synthesised during a PEI-mediated secondary growth phase, where Zn-PEI complexes continue to provide Zn²⁺ ions after the bulk of the precursors have been exhausted. The PEI-mediated synthesis of hierarchical nanowires is used to fabricate FETs by laterally growing intersecting networks of nanowires from spaced pairs of ZnO/Ti films, which have been patterned on SiO₂/Si device substrates. All of these FETs show marked field dependence between VG = -10 V to 10 V, despite being used without annealing. Typical on-off ratios are between 10³ - 10⁵, with threshold voltages between -7.5 V to 5 V. This is a significant result, as the majority of ZnO nanowire FETs reported in the literature require high temperature annealing. Persistent photoconductivity measurements indicate that surface states on the nanowires contribute to the intrinsic field dependence of the devices. Hierarchical nanowires are also synthesised by modular primary and secondary hydrothermal growths. FETs fabricated using these hierarchical nanowires show less field dependence than PEI-mediated hierarchical nanowires, with limited function ality when used in air. The best FET measured in air operates with an on-off ratio of 10⁴ and a threshold voltage of ~ 0 V. Devices which are field-independent in air can be reliably gated by measuring the FETs in a wet environment, using de-ionised water as a dielectric. A back-gated wet FET operates with an on-off ratio of 105 and a threshold voltage of ~ 8 V. Top-gated wet FETs operate with on-off ratios within 103 - 104, and threshold voltages within 0.4 - 0.9 V. These devices also have significantly low subthreshold swings, on the order of 80 mV/decade. FETs are fabricated by contacting individual ZnO nanowires using electron-beam lithography, although only one vertical ZnO nanowire shows field dependence, with… Advisors/Committee Members: Plank, Natalie, Trodahl, Joe.

Subjects/Keywords: ZnO; Nanowire; Transistor

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APA (6^th Edition):

Burke-Govey, C. P. (2018). ZnO nanowires and their application in field-effect transistors. (Doctoral Dissertation). Victoria University of Wellington. Retrieved from http://hdl.handle.net/10063/6927

Chicago Manual of Style (16^th Edition):

Burke-Govey, Conor Patrick. “ZnO nanowires and their application in field-effect transistors.” 2018. Doctoral Dissertation, Victoria University of Wellington. Accessed July 21, 2019. http://hdl.handle.net/10063/6927.

MLA Handbook (7^th Edition):

Burke-Govey, Conor Patrick. “ZnO nanowires and their application in field-effect transistors.” 2018. Web. 21 Jul 2019.

Vancouver:

Burke-Govey CP. ZnO nanowires and their application in field-effect transistors. [Internet] [Doctoral dissertation]. Victoria University of Wellington; 2018. [cited 2019 Jul 21]. Available from: http://hdl.handle.net/10063/6927.

Council of Science Editors:

Burke-Govey CP. ZnO nanowires and their application in field-effect transistors. [Doctoral Dissertation]. Victoria University of Wellington; 2018. Available from: http://hdl.handle.net/10063/6927

Penn State University

10. Cooley, Benjamin Joseph. Growth, Structure, and Optical Characterization of Diluted Magnetic Semiconductor Nanowires.

Degree: PhD, Physics, 2010, Penn State University

URL: https://etda.libraries.psu.edu/catalog/11303

► Nanowires combining the usually disparate areas of semiconductors and magnetism are of contemporary relevance within the context of semiconductor spintronics. This is a relatively new… (more)

▼ Nanowires combining the usually disparate areas of semiconductors and magnetism are of contemporary relevance within the context of semiconductor spintronics. This is a relatively new field of research that seeks to exploit electron spin within electronic and opto-electronic semiconductor devices. While much of the effort within semiconductor spintronics has been directed toward fundamental studies and applications of 3D, 2D and 0D systems, there has been little work to date on 1D systems. The distinctive change in the electronic density of states with changing dimensionality provides a strong motivation for developing and exploring semiconductor nanowires in which one might be able to probe and control spin-dependent phenomena within a 1D or quasi-1D environment. This thesis explores the crystal growth, structural properties and magneto-optical behavior of quasi-1D semiconductor nanowires in which we incorporate magnetism through two approaches: first, by synthesizing nanowires of the diluted magnetic semiconductor (Zn,Mn)Se, wherein the d-shell electrons of substitutional Mn ions interact with the band states of the ZnSe host lattice via sp–d exchange; second, by making hybrid core-shell nanostructures wherein a metallic ferromagnetic shell (MnAs) is epitaxially deposited on a semiconductor nanowire (GaAs). After an introductory overview of past work in the field and a description of the experimental techniques relevant to the thesis, we discuss our experimental results. The first set of experiments focuses on ZnSe and (Zn,Mn)Se nanowires grown in a single stage. The nanowires were grown on Si and GaAs substrates with a thin layer of gold evaporated onto them, which were then annealed before growth so that the gold formed nanoscale droplets. The growth yields samples covered in random arrays of nanowires growing out an an angle to the substrate, with an undergrowth of crooked nanowires and other small structures. The long thin nanowires vary in diameter, down to ~ 10 nm, with ~ 15–20 nm being fairly common. Structural characterization done by transmission electron microscopy (TEM) shows that the long nanowires are largely single crystal, though often with many stacking faults, and tend to form in the wurtzite crystal structure with c-axis growth direction. Elemental analysis performed on individual nanowires using X-ray energy dispersive spectroscopy shows that Mn can be incorporated into Zn1−xMnxSe nanowires in high concentrations, up to x ~ 0.6. Magneto-photoluminescence (magneto-PL) measurements of as-grown samples reveal substantial Zeeman shifts in the near band edge luminescence, but only partial polarization, indicating the luminescence is originating in a nanostructured environment. Surprisingly, however, nearly all of the PL signal comes from the nanostructured undergrowth rather than the long nanowires, as shown from magneto-PL measurements of samples which were sonicated…

Subjects/Keywords: diluted magnetic semiconductor; nanowire; semiconductor nanowire; nanowire growth

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APA (6^th Edition):

Cooley, B. J. (2010). Growth, Structure, and Optical Characterization of Diluted Magnetic Semiconductor Nanowires. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/11303

Chicago Manual of Style (16^th Edition):

Cooley, Benjamin Joseph. “Growth, Structure, and Optical Characterization of Diluted Magnetic Semiconductor Nanowires.” 2010. Doctoral Dissertation, Penn State University. Accessed July 21, 2019. https://etda.libraries.psu.edu/catalog/11303.

MLA Handbook (7^th Edition):

Cooley, Benjamin Joseph. “Growth, Structure, and Optical Characterization of Diluted Magnetic Semiconductor Nanowires.” 2010. Web. 21 Jul 2019.

Vancouver:

Cooley BJ. Growth, Structure, and Optical Characterization of Diluted Magnetic Semiconductor Nanowires. [Internet] [Doctoral dissertation]. Penn State University; 2010. [cited 2019 Jul 21]. Available from: https://etda.libraries.psu.edu/catalog/11303.

Council of Science Editors:

Cooley BJ. Growth, Structure, and Optical Characterization of Diluted Magnetic Semiconductor Nanowires. [Doctoral Dissertation]. Penn State University; 2010. Available from: https://etda.libraries.psu.edu/catalog/11303

University of Texas – Austin

11. Smith, Damon Allen. Mechanical, electromechanical, and optical properties of germanium nanowires.

Degree: Materials Science and Engineering, 2009, University of Texas – Austin

URL: http://hdl.handle.net/2152/7678

► In order to completely assess the potential of semiconductor nanowires for multifunctional applications such as flexible electronics, nanoelectromechanical systems (NEMS), and composites, a full characterization… (more)

▼ In order to completely assess the potential of semiconductor nanowires for multifunctional applications such as flexible electronics, nanoelectromechanical systems (NEMS), and composites, a full characterization of their properties must be obtained. While many of their physical properties have been well studied, explorations of mechanical, electromechanical, and optical properties of semiconductor nanowires remain relatively sparse in the literature. Two major hurdles to the elucidation of these properties are: (1) the development of experimental techniques which are capable of mechanical and electromechanical measurements coupled with detailed structural analysis, and (2) the synthesis of high quality nanowires with the high yields necessary to produce the quantities needed for composite fabrication. These issues are addressed in this dissertation by utilizing the supercritical fluid-liquid-solid (SFLS) synthesis method to produce germanium (Ge) nanowire specimens for mechanical and electromechanical measurements coupled with high-resolution transmission electron microscopy (HRTEM). In addition, excellent dispersibility and large quantities allow for optical measurements of dispersions and composites. Ge cantilever nanoelectromechanical resonators were fabricated and induced into resonance. From the frequency response, the Young's modulus of the nanowires was determined to be insensitive to diameter and on par with the literature values for bulk Ge. The mechanical quality factors of the resonators were found to decrease with decreasing diameter. The data indicate that energy dissipation from the oscillating cantilevers occurs predominantly via surface losses. The mechanical strengths of individual Ge nanowires were measured by in situ nanomanipulation in a scanning electron microscope (SEM). The nanowires were found to tolerate diameter-dependent flexural strains more than two orders of magnitude higher than bulk Ge. Corresponding bending strengths were in agreement with the ideal strength of a perfect Ge crystal, indicative of a reduced presence of extended defects. The nanowires also exhibited plastic deformation at room temperature, becoming amorphous at the point of maximum strain. The optical absorbance spectra of Ge nanowires were measured and found to exhibit spectra markedly different from bulk Ge. Simulations using a discrete dipole approximation (DDA) model suggest that the difference in light absorption results from light trapping within the nanowires. Advisors/Committee Members: Korgel, Brian Allan, 1969- (advisor).

Subjects/Keywords: Germanium nanowires; Nanowire mechanical properties; Nanowire electromechanical properties; Nanowire optical properties

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APA (6^th Edition):

Smith, D. A. (2009). Mechanical, electromechanical, and optical properties of germanium nanowires. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/7678

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Smith, Damon Allen. “Mechanical, electromechanical, and optical properties of germanium nanowires.” 2009. Thesis, University of Texas – Austin. Accessed July 21, 2019. http://hdl.handle.net/2152/7678.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Smith, Damon Allen. “Mechanical, electromechanical, and optical properties of germanium nanowires.” 2009. Web. 21 Jul 2019.

Vancouver:

Smith DA. Mechanical, electromechanical, and optical properties of germanium nanowires. [Internet] [Thesis]. University of Texas – Austin; 2009. [cited 2019 Jul 21]. Available from: http://hdl.handle.net/2152/7678.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Smith DA. Mechanical, electromechanical, and optical properties of germanium nanowires. [Thesis]. University of Texas – Austin; 2009. Available from: http://hdl.handle.net/2152/7678

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Arizona State University

12. Joun, Hee-Joung. Studies of Epitaxial Silicon Nanowire Growth at Low Temperature.

Degree: PhD, Materials Science and Engineering, 2011, Arizona State University

URL: http://repository.asu.edu/items/9327

► Silicon nanowires were grown epitaxially on Si (100) and (111) surfaces using the Vapor-Liquid-Solid (VLS) mechanism under both thermal and plasma enhanced growth conditions. Nanowire… (more)

Subjects/Keywords: Materials Science; Bending nanowire; Branch nanowire; Nanocrystalline; PECVD; Si nanowire

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APA (6^th Edition):

Joun, H. (2011). Studies of Epitaxial Silicon Nanowire Growth at Low Temperature. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/9327

Chicago Manual of Style (16^th Edition):

Joun, Hee-Joung. “Studies of Epitaxial Silicon Nanowire Growth at Low Temperature.” 2011. Doctoral Dissertation, Arizona State University. Accessed July 21, 2019. http://repository.asu.edu/items/9327.

MLA Handbook (7^th Edition):

Joun, Hee-Joung. “Studies of Epitaxial Silicon Nanowire Growth at Low Temperature.” 2011. Web. 21 Jul 2019.

Vancouver:

Joun H. Studies of Epitaxial Silicon Nanowire Growth at Low Temperature. [Internet] [Doctoral dissertation]. Arizona State University; 2011. [cited 2019 Jul 21]. Available from: http://repository.asu.edu/items/9327.

Council of Science Editors:

Joun H. Studies of Epitaxial Silicon Nanowire Growth at Low Temperature. [Doctoral Dissertation]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/9327

Harvard University

13. Choe, Hwan Sung. Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing.

Degree: PhD, Physics, 2013, Harvard University

URL: http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158237

►

For the last decade, semiconducting nanowires synthesized by bottom-up methods have opened up new opportunities, stimulated innovative scientific research, and led to applications in materials… (more)

Subjects/Keywords: Nanotechnology; Electrical engineering; Nanoscience; biosensor; electrochemical sensor; nanowire circuit; nanowire synthesis; Semiconductor nanowire

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APA (6^th Edition):

Choe, H. S. (2013). Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing. (Doctoral Dissertation). Harvard University. Retrieved from http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158237

Chicago Manual of Style (16^th Edition):

Choe, Hwan Sung. “Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing.” 2013. Doctoral Dissertation, Harvard University. Accessed July 21, 2019. http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158237.

MLA Handbook (7^th Edition):

Choe, Hwan Sung. “Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing.” 2013. Web. 21 Jul 2019.

Vancouver:

Choe HS. Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing. [Internet] [Doctoral dissertation]. Harvard University; 2013. [cited 2019 Jul 21]. Available from: http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158237.

Council of Science Editors:

Choe HS. Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing. [Doctoral Dissertation]. Harvard University; 2013. Available from: http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158237

University of Cincinnati

14. Kaveh Baghbadorani, Masoud. Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor Nanowires.

Degree: PhD, Arts and Sciences: Physics, 2016, University of Cincinnati

URL: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1470754655

► In this dissertation, the dynamics of excitons in hybrid metal/organic/nanowire structures possessing nanometer thick deposited molecular and metal films on top of InP and GaAs… (more)

▼ In this dissertation, the dynamics of excitons in hybrid metal/organic/nanowire structures possessing nanometer thick deposited molecular and metal films on top of InP and GaAs nanowire (NW) surfaces were investigated. Optical characterizations were carried out as a function of the semiconductor NW material, design, NW size and the type and thickness of the organic material and metal used. Hybrid organic and plasmonic semiconductor nanowire heterostructures were fabricated using organic molecular beam deposition technique. I investigated the photon emission of excitons in ~150 nm diameter polytype wurtzite/zincblende InP NWs and the influence of a few ten nanometer thick organic and metal films on the emission using intensity- and temperature-dependent time-integrated and timeresolved (TR) photoluminescence (PL). The plasmonic NWs were coated with an Aluminum quinoline (Alq3) interlayer and magnesium–silver (Mg0.9:Ag0.1) top layer. In addition, the nonlinear optical technique of heterodyne four-wave mixing was used (in collaboration with Prof. Wolfgang Langbein, University of Cardiff) to study incoherent and coherent carrier relaxation processes on bare nanowires on a 100 femtosecond time-scale. Alq3 covered NWs reveal a stronger emission and a longer decay time of exciton transitions indicating surface state passivation at the Alq3/NW interface. Alq3/Mg:Ag NWs reveal a strong quenching of the exciton emission which is predominantly attributed to Forster energy-transfer from excitons to plasmon oscillations in the metal cluster film. Changing the Mg:Ag to gold and the organic Alq3 spacer layer to PTCDA leads to a similar behavior, but the PL quenching is strongly increased. The observed behavior is attributed to a more continuous gold deposition leading to an increased Forster energy transfer and to a metal induced band-bending. I also investigated ensembles of bare and gold/Alq3 coated GaAs-AlGaAs-GaAs coreshell NWs of 130 nm diameter. Plasmonic NWs with Au coating reveal a significant reduction of the PL intensity compared with the uncoated NWs. Organic-plasmonic NWs with an additional Alq3 interlayer show a noticeably stronger PL intensity which increases with rising Alq3 spacer thickness. Metal induced band bending is mainly attributed to be responsible for the PL quenching. TR PL measurements support our interpretation by showing an increase in the exciton decay times as we increase the spacer thickness. Au coated NWs also reveal a strong polarization dependent absorption which is mainly due to the significant dielectric mismatch between the nanowires and the adjacent vacuum environment. Finally, the amplified spontaneous emission (ASE) and possible plasmonic NW lasing from hybrid plasmonic core-shell GaAs NW heterostructures was investigated. The plasmonic heterostructures are composed of either bare NWs on an Au coated glass substrate or Au coated NWs on a bare glass substrate. Intensity-dependent PL on plasmonic NW samples reveals a superlinear increase of the PL intensities which is attributed to an ASE at a… Advisors/Committee Members: Wagner, Hans Peter (Committee Chair).

Subjects/Keywords: Physics; InP Nanowire; GaAs Nanowire; Optical Characterization; Organic Plasmonic Heterostructures; HFWM; Plasmonic Nanowire Lasing

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APA (6^th Edition):

Kaveh Baghbadorani, M. (2016). Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor Nanowires. (Doctoral Dissertation). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1470754655

Chicago Manual of Style (16^th Edition):

Kaveh Baghbadorani, Masoud. “Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor Nanowires.” 2016. Doctoral Dissertation, University of Cincinnati. Accessed July 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1470754655.

MLA Handbook (7^th Edition):

Kaveh Baghbadorani, Masoud. “Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor Nanowires.” 2016. Web. 21 Jul 2019.

Vancouver:

Kaveh Baghbadorani M. Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor Nanowires. [Internet] [Doctoral dissertation]. University of Cincinnati; 2016. [cited 2019 Jul 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1470754655.

Council of Science Editors:

Kaveh Baghbadorani M. Emission and Dynamics of Charge Carriers in Uncoated and Organic/Metal Coated Semiconductor Nanowires. [Doctoral Dissertation]. University of Cincinnati; 2016. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1470754655

University of Texas – Austin

15. Hong, Ki-Pyo, M.S. in Engineering. Rational fabrication, assembling and actuation of nanowire multi-mer nanomotors.

Degree: Mechanical Engineering, 2015, University of Texas – Austin

URL: http://hdl.handle.net/2152/46976

► Direct field induced manipulations of nanowires have been recognized as a possible alternative to conventional chemical based assembling techniques. In particular, manipulation of nanowires with… (more)

▼ Direct field induced manipulations of nanowires have been recognized as a possible alternative to conventional chemical based assembling techniques. In particular, manipulation of nanowires with an external electric field allows the facile and precision assembly of nanowires into various nanoscale devices. In this study, we have rationally synthesized multisegment Au/Ni nanowires and assembled them into a unique type of rotary nanomotors made of nanowire multi-mers with designed geometric configurations by the electric tweezers. The electric tweezers are a recent invention developed by Prof. Fan’s group, which are based on the combined electrophoretic and dielectrophoretic forces to transport and align nanowires independently in low Reynolds number suspensions. The Au/Ni multi-segmented nanowires are rationally designed and fabricated by electrodeposition into nanoporous templates. By employing the ferromagnetic properties of the nickel segments in the nanowires, we precisely transported and assembled randomly disperse nanowires into multi-mer nanowire devices with designed configuration and further assembled them as the rotors of nanomotors. The magnetic attraction between the Ni segments in the nanowires holds the joints of dimers, trimers and tetramers tightly. The rotary nanomotors made of multiple assembled nanowires with designed configuration are the first to the best of our knowledge. Our study of their rotation behaviors as functions of voltage and frequency shows that the rotational speed of the nanomotors linearly increases with the square of the applied AC voltages and depends on the AC frequencies. The voltage square dependence is highly desirable for achieving ultrahigh speed rotation. This research could generate interest and impact multiple research fields including nanoelectromechanical system (NEMS) devices, nanomotors, microfluidic architectures and single-cell biology. Advisors/Committee Members: Fan, Donglei (advisor), Li, Wei (committee member).

Subjects/Keywords: Nanomotor; Nanowire; Nanorotor; Nano-assembly; Nanowire multi-mers; Nanowire assembly; Rotary nanomotors

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APA (6^th Edition):

Hong, Ki-Pyo, M. S. i. E. (2015). Rational fabrication, assembling and actuation of nanowire multi-mer nanomotors. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/46976

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Hong, Ki-Pyo, M S in Engineering. “Rational fabrication, assembling and actuation of nanowire multi-mer nanomotors.” 2015. Thesis, University of Texas – Austin. Accessed July 21, 2019. http://hdl.handle.net/2152/46976.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Hong, Ki-Pyo, M S in Engineering. “Rational fabrication, assembling and actuation of nanowire multi-mer nanomotors.” 2015. Web. 21 Jul 2019.

Vancouver:

Hong, Ki-Pyo MSiE. Rational fabrication, assembling and actuation of nanowire multi-mer nanomotors. [Internet] [Thesis]. University of Texas – Austin; 2015. [cited 2019 Jul 21]. Available from: http://hdl.handle.net/2152/46976.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hong, Ki-Pyo MSiE. Rational fabrication, assembling and actuation of nanowire multi-mer nanomotors. [Thesis]. University of Texas – Austin; 2015. Available from: http://hdl.handle.net/2152/46976

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Texas A&M University

16. Gwak, Yunki. Thermal Transport Measurement of Silicon-Germanium Nanowires.

Degree: 2010, Texas A&M University

URL: http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889

► Thermal properties of one dimensional nanostructures are of interest for thermoelectric energy conversion. Thermoelectric efficiency is related to non dimensional thermoelectric figure of merit, ZT=S²… (more)

▼ Thermal properties of one dimensional nanostructures are of interest for thermoelectric energy conversion. Thermoelectric efficiency is related to non dimensional thermoelectric figure of merit, ZT=S² o T/k, where S ,o , k and T are Seebeck coefficient, electrical conductivity, thermal conductivity and the absolute temperature respectively. These physical properties are interdependent. Therefore, making materials with high ZT is a very challenging task. However, nanoscale materials can overcome some of these limitations. When the size of nanomaterials is comparable to wavelength and mean free path of energy carriers, especially phonons, size effect contributes to the thermal conductivity reduction without bringing about major changes in the electrical conductivity and the Seebeck coefficient. Therefore, the figure of merit ZT can be manipulated. For example, the thermal conductivities of several silicon nanowires were more than two orders of magnitude lower than that of bulk silicon values due to the enhanced boundary scattering. Among the nanoscale semiconductor materials, Silicon-Germanium(SiGe) alloy nanowire is a promising candidate for thermoelectric materials The thermal conductivities of SiGe core-shell nanowires with core diameters of 96nm, 129nm and 177nm were measured using a batch fabricated micro device in a temperature range of 40K-450K. SiGe nanowires used in the experiment were synthesized via the Vapour-Liquid-Solid (VLS) growth method. The thermal conductivity data was compared with thermal conductivity of Si and Ge nanowires. The data was compared with SiGe alloy thin film, bulk SiGe, Si/SixGe1-x superlattice nanowire, Si/Si0.7Ge0.3 superlattice thin film and also with the thermal conductivity of Si0.5Ge0.5 calculated using the Einstein model. The thermal conductivities of these SiGe alloy nanowires observed in this work are ~20 times lower than Si nanowires, ~10 times lower than Ge nanowires, ~3-4 times lower than Si/SixGe1-x superlattice thin film, Si/SixGe1-x superlattice nanowire and about 3 time lower than bulk SiGe alloy. The low values of thermal conductivity are majorly due to the effect of alloy scattering, due to increased boundary scattering as a result of nanoscale diameters, and the interface diffuse scattering by core-shell effect. The influence of core-shell effect, alloy scattering and boundary scattering effect in reducing the thermal conductivity of these nanowires opens up opportunities for tuning thermoelectric properties which can pave way to thermoelectric materials with high figures of merit in the future. Advisors/Committee Members: Yu, Choongho (advisor), Jin, Yongmei (committee member), Karaman, Ibrahim (committee member).

Subjects/Keywords: SiGe; nanowire; thermal conductivity

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APA (6^th Edition):

Gwak, Y. (2010). Thermal Transport Measurement of Silicon-Germanium Nanowires. (Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Gwak, Yunki. “Thermal Transport Measurement of Silicon-Germanium Nanowires.” 2010. Thesis, Texas A&M University. Accessed July 21, 2019. http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Gwak, Yunki. “Thermal Transport Measurement of Silicon-Germanium Nanowires.” 2010. Web. 21 Jul 2019.

Vancouver:

Gwak Y. Thermal Transport Measurement of Silicon-Germanium Nanowires. [Internet] [Thesis]. Texas A&M University; 2010. [cited 2019 Jul 21]. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gwak Y. Thermal Transport Measurement of Silicon-Germanium Nanowires. [Thesis]. Texas A&M University; 2010. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2009-08-889

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Addis Ababa University

17. Kidist, Moges. MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS .

Degree: 2013, Addis Ababa University

URL: http://etd.aau.edu.et/dspace/handle/123456789/4501

► Modeling and simulation of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) is very essential in order to understand the device physics, electrostatics and other important… (more)

▼ Modeling and simulation of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) is very essential in order to understand the device physics, electrostatics and other important phenomena occurring in this device. Therefore, in this thesis the modeling and simulation of Silicon Nano Wire field Effect Transistors (SiNW FETs) is done. The modeling is done assuming both ballistic transport and transport in the presence of scattering. The modeling of SiNW FETs assuming ballistic transport is an extension of the Natori’s theory of ballistic MOSFETs. The second part of the modeling, which is developed on the assumption of scattering transport, is based on McKelvey’s flux method. When the scattering effects are assumed to be absent, the scattering model reduces to the ballistic model. Therefore, the main novelty introduced in this thesis is the extension of the previous models and the incorporation of these two models together. After the derivation of the model, its benchmarking is also done. This is accomplished by comparing the simulation results of the developed model, which is implemented using MATLAB programming, with that of the experimental and numerical simulation results. Various important parameters are extracted and used for comparison, the main ones being the On-state current (Ion), the Off-state current (Ioff), the Subthreshold Slope (SS) and drain induced barrier lowering (DIBL). The comparison shows that there is a good agreement between the simulation results of the developed model and the experimental and numerical simulation results, which indicates the validity of the model. Finally, the effect of scaling of the physical parameters on the device performance is investigated. The main parameters chosen for this investigation are the diameter of the Nano Wire (NW) and the gate oxide thickness. When a simulation is done by varying these parameters, Ion and Ioff currents are found to be affected greatly. Advisors/Committee Members: Dr. Adeyabeba Abera (advisor).

Subjects/Keywords: SILICON NANOWIRE; TRANSISTORS; FIELD EFFECT

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APA (6^th Edition):

Kidist, M. (2013). MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS . (Thesis). Addis Ababa University. Retrieved from http://etd.aau.edu.et/dspace/handle/123456789/4501

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Kidist, Moges. “MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS .” 2013. Thesis, Addis Ababa University. Accessed July 21, 2019. http://etd.aau.edu.et/dspace/handle/123456789/4501.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Kidist, Moges. “MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS .” 2013. Web. 21 Jul 2019.

Vancouver:

Kidist M. MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS . [Internet] [Thesis]. Addis Ababa University; 2013. [cited 2019 Jul 21]. Available from: http://etd.aau.edu.et/dspace/handle/123456789/4501.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kidist M. MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS . [Thesis]. Addis Ababa University; 2013. Available from: http://etd.aau.edu.et/dspace/handle/123456789/4501

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

The Ohio State University

18. Lee, Huyong. Titanium Oxide Nanowire Growth by Oxidation Under a Limited Supply of Oxygen: Processing and Characterization.

Degree: PhD, Materials Science and Engineering, 2009, The Ohio State University

URL: http://rave.ohiolink.edu/etdc/view?acc_num=osu1236191211

► Instead of using expensive and complex methods to produce 1D structures, a simple direct oxidation method has been developed to produce either pure TiO₂… (more)

▼ Instead of using expensive and complex methods to produce 1D structures, a simple direct oxidation method has been developed to produce either pure TiO₂ nanowire or heterogeneous nanowires under a limited supply of oxygen. The dimension of the nanofibers ranged from 30 to 60 nm in diameter and their length were between 500 nm to several µm depending on Ti alloy samples. Experimental parameters such as flow rate, heat treatment temperature, and gas constituent have effects on the surface morphology of the samples. Based on studies under various conditions, pure TiO₂ nanowires were only grown on pure Ti samples at the heat treatment temperature of 600 °C with an Ar flow rate of 200 ml/min. As the heat treatment temperature increased, well faceted crystals were formed and connected to each other to form a continuous oxide scale. As the flow rate increased, the formation of nanowires were hindered and an oxide layer was formed rather than the formation of nanowires. The phase of nanowires was determined to be rutile based on SAED pattern from TEM analyses. For Ti alloy samples, the growth of nanowires was accelerated in terms of the density and length. The effects of the heat treatment temperature on the surface morphology were similar to those of pure Ti samples. However, the effect of the flow rate was not prominent as those of pure Ti samples. Consequently, the growth processing window for Ti alloys is larger than that of pure Ti samples with respect to the flow rate. The phase characterization of nanowires by XRD and TEM analyses indicated that the inner rutile core was covered by an Al rich outer layer. While the growth mechanism for nanowire formation is not well understood, it is established that the growth occurs at the tip and that the rate limiting step is the transport of oxygen through the gas boundary layer. Additionally, 1D growth implies surface reaction anisotropy that disappears at high temperature promoting oxide cale growth. the Based on experimental observations, a four-stage mechanism is proposed as a function of time. In stage I, a cracked oxide scale grows followed by the formation of bumps in stage II that act as nucleation sites for nanowires. In stage III, nanowires continue to grow along with nucleation and growth of new nanowires leading to the increase in density. In stage IV, the density of nanowires is so large that the accessibility of oxygen to the base becomes difficult and nanowires continue to grow at the tip. Advisors/Committee Members: Akbar, Sheikh (Advisor), Dregia, Suliman (Advisor).

Subjects/Keywords: Materials Science; Nanowire; oxidation; TiO2

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APA (6^th Edition):

Lee, H. (2009). Titanium Oxide Nanowire Growth by Oxidation Under a Limited Supply of Oxygen: Processing and Characterization. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1236191211

Chicago Manual of Style (16^th Edition):

Lee, Huyong. “Titanium Oxide Nanowire Growth by Oxidation Under a Limited Supply of Oxygen: Processing and Characterization.” 2009. Doctoral Dissertation, The Ohio State University. Accessed July 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1236191211.

MLA Handbook (7^th Edition):

Lee, Huyong. “Titanium Oxide Nanowire Growth by Oxidation Under a Limited Supply of Oxygen: Processing and Characterization.” 2009. Web. 21 Jul 2019.

Vancouver:

Lee H. Titanium Oxide Nanowire Growth by Oxidation Under a Limited Supply of Oxygen: Processing and Characterization. [Internet] [Doctoral dissertation]. The Ohio State University; 2009. [cited 2019 Jul 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1236191211.

Council of Science Editors:

Lee H. Titanium Oxide Nanowire Growth by Oxidation Under a Limited Supply of Oxygen: Processing and Characterization. [Doctoral Dissertation]. The Ohio State University; 2009. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1236191211

University of Akron

19. Kucherlapati, Naga Swathi. Modeling of a Three Layer Coated Nanowire Transistor.

Degree: MSin Engineering, Electrical Engineering, 2010, University of Akron

URL: http://rave.ohiolink.edu/etdc/view?acc_num=akron1291935683

► The integration density of silicon transistors is increasing from the past few decades due to rapid miniaturization. Bipolar junction transistors (BJT) successfully replaced vacuum… (more)

Subjects/Keywords: Electrical Engineering; nanowire transistor

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APA (6^th Edition):

Kucherlapati, N. S. (2010). Modeling of a Three Layer Coated Nanowire Transistor. (Masters Thesis). University of Akron. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=akron1291935683

Chicago Manual of Style (16^th Edition):

Kucherlapati, Naga Swathi. “Modeling of a Three Layer Coated Nanowire Transistor.” 2010. Masters Thesis, University of Akron. Accessed July 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=akron1291935683.

MLA Handbook (7^th Edition):

Kucherlapati, Naga Swathi. “Modeling of a Three Layer Coated Nanowire Transistor.” 2010. Web. 21 Jul 2019.

Vancouver:

Kucherlapati NS. Modeling of a Three Layer Coated Nanowire Transistor. [Internet] [Masters thesis]. University of Akron; 2010. [cited 2019 Jul 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=akron1291935683.

Council of Science Editors:

Kucherlapati NS. Modeling of a Three Layer Coated Nanowire Transistor. [Masters Thesis]. University of Akron; 2010. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=akron1291935683

University of Cincinnati

20. Lai, Peng. Mesoporous Silica Nanowires by Space-confined Organic-Inorganic Hybrid Self-Assembly.

Degree: MS, Engineering : Materials Science, 2007, University of Cincinnati

URL: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1172113649

► This research focuses on the space-confined P123-silica hybrid self-assembly. Mesoporous silica nanowires with various diameters (10 – 400nm) were synthesized via sol-gel combined vapor-induced self-assembly… (more)

Subjects/Keywords: nanowire; self-assembly; AAO; EPC

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APA (6^th Edition):

Lai, P. (2007). Mesoporous Silica Nanowires by Space-confined Organic-Inorganic Hybrid Self-Assembly. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1172113649

Chicago Manual of Style (16^th Edition):

Lai, Peng. “Mesoporous Silica Nanowires by Space-confined Organic-Inorganic Hybrid Self-Assembly.” 2007. Masters Thesis, University of Cincinnati. Accessed July 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1172113649.

MLA Handbook (7^th Edition):

Lai, Peng. “Mesoporous Silica Nanowires by Space-confined Organic-Inorganic Hybrid Self-Assembly.” 2007. Web. 21 Jul 2019.

Vancouver:

Lai P. Mesoporous Silica Nanowires by Space-confined Organic-Inorganic Hybrid Self-Assembly. [Internet] [Masters thesis]. University of Cincinnati; 2007. [cited 2019 Jul 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1172113649.

Council of Science Editors:

Lai P. Mesoporous Silica Nanowires by Space-confined Organic-Inorganic Hybrid Self-Assembly. [Masters Thesis]. University of Cincinnati; 2007. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1172113649

NSYSU

21. Wang, Ching-Wen. Synthesis of Silver Nanowires by TiO2 Nanoparticles.

Degree: Master, Chemistry, 2008, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623108-164201

► ãSilver nanowires prepared by the the reduction of AgNO3 at low temperature with thermocatalystic biphase (anatase and brookite phases) TiO2 nanoparticles are described. Furthermore, the… (more)

Subjects/Keywords: nanoparticle; TiO2; silver nanowire

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APA (6^th Edition):

Wang, C. (2008). Synthesis of Silver Nanowires by TiO2 Nanoparticles. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623108-164201

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Wang, Ching-Wen. “Synthesis of Silver Nanowires by TiO2 Nanoparticles.” 2008. Thesis, NSYSU. Accessed July 21, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623108-164201.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Wang, Ching-Wen. “Synthesis of Silver Nanowires by TiO2 Nanoparticles.” 2008. Web. 21 Jul 2019.

Vancouver:

Wang C. Synthesis of Silver Nanowires by TiO2 Nanoparticles. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Jul 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623108-164201.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang C. Synthesis of Silver Nanowires by TiO2 Nanoparticles. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623108-164201

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University College Cork

22. Kelly, Róisín A. Modifying germanium nanowires for future devices: an in situ TEM study.

Degree: 2016, University College Cork

URL: http://hdl.handle.net/10468/2752

► Germanium was of great interest in the 1950’s when it was used for the first transistor device. However, due to the water soluble and unstable… (more)

▼ Germanium was of great interest in the 1950’s when it was used for the first transistor device. However, due to the water soluble and unstable oxide it was surpassed by silicon. Today, as device dimensions are shrinking the silicon oxide is no longer suitable due to gate leakage and other low-κ dielectrics such as Al2O3 and HfO2 are being used. Germanium (Ge) is a promising material to replace or integrate with silicon (Si) to continue the trend of Moore’s law. Germanium has better intrinsic mobilities than silicon and is also silicon fab compatible so it would be an ideal material choice to integrate into silicon-based technologies. The progression towards nanoelectronics requires a lot of in depth studies. Dynamic TEM studies allow observations of reactions to allow a better understanding of mechanisms and how an external stimulus may affect a material/structure. This thesis details in situ TEM experiments to investigate some essential processes for germanium nanowire (NW) integration into nanoelectronic devices; i.e. doping and Ohmic contact formation. Chapter 1 reviews recent advances in dynamic TEM studies on semiconductor (namely silicon and germanium) nanostructures. The areas included are nanowire/crystal growth, germanide/silicide formation, irradiation, electrical biasing, batteries and strain. Chapter 2 details the study of ion irradiation and the damage incurred in germanium nanowires. An experimental set-up is described to allow for concurrent observation in the TEM of a nanowire following sequential ion implantation steps. Grown nanowires were deposited on a FIB labelled SiN membrane grid which facilitated HRTEM imaging and facile navigation to a specific nanowire. Cross sections of irradiated nanowires were also performed to evaluate the damage across the nanowire diameter. Experiments were conducted at 30 kV and 5 kV ion energies to study the effect of beam energy on nanowires of varied diameters. The results on nanowires were also compared to the damage profile in bulk germanium with both 30 kV and 5 kV ion beam energies. Chapter 3 extends the work from chapter 2 whereby nanowires are annealed post ion irradiation. In situ thermal annealing experiments were conducted to observe the recrystallization of the nanowires. A method to promote solid phase epitaxial growth is investigated by irradiating only small areas of a nanowire to maintain a seed from which the epitaxial growth can initiate. It was also found that strain in the nanowire greatly effects defect formation and random nucleation and growth. To obtain full recovery of the crystal structure of a nanowire, a stable support which reduces strain in the nanowire is essential as well as containing a seed from which solid phase epitaxial growth can initiate. Chapter 4 details the study of nickel germanide formation in germanium nanostructures. Rows of EBL (electron beam lithography) defined Ni-capped germanium nanopillars were extracted in FIB cross sections and annealed in situ to observe the germanide formation. Chapter 5 summarizes the key… Advisors/Committee Members: Petkov, Nikolay, Holmes, Justin D., SFI.

Subjects/Keywords: Germanium; Nanowire; Irradiation; Recrystallisation; Germanide

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APA (6^th Edition):

Kelly, R. A. (2016). Modifying germanium nanowires for future devices: an in situ TEM study. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/2752

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Kelly, Róisín A. “Modifying germanium nanowires for future devices: an in situ TEM study.” 2016. Thesis, University College Cork. Accessed July 21, 2019. http://hdl.handle.net/10468/2752.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Kelly, Róisín A. “Modifying germanium nanowires for future devices: an in situ TEM study.” 2016. Web. 21 Jul 2019.

Vancouver:

Kelly RA. Modifying germanium nanowires for future devices: an in situ TEM study. [Internet] [Thesis]. University College Cork; 2016. [cited 2019 Jul 21]. Available from: http://hdl.handle.net/10468/2752.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kelly RA. Modifying germanium nanowires for future devices: an in situ TEM study. [Thesis]. University College Cork; 2016. Available from: http://hdl.handle.net/10468/2752

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University College Cork

23. Wahl, Amélie. Fabrication, characterisation and electroanalysis at 1-dimensional nanostructures.

Degree: 2013, University College Cork

URL: http://hdl.handle.net/10468/1740

► Integrated nanowire electrodes that permit direct, sensitive and rapid electrochemical based detection of chemical and biological species are a powerful emerging class of sensor devices.… (more)

▼ Integrated nanowire electrodes that permit direct, sensitive and rapid electrochemical based detection of chemical and biological species are a powerful emerging class of sensor devices. As critical dimensions of the electrodes enter the nanoscale, radial analyte diffusion profiles to the electrode dominate with a corresponding enhancement in mass transport, steady-state sigmoidal voltammograms, low depletion of target molecules and faster analysis. To optimise these sensors it is necessary to fully understand the factors that influence performance limits including: electrode geometry, electrode dimensions, electrode separation distances (within nanowire arrays) and diffusional mass transport. Therefore, in this thesis, theoretical simulations of analyte diffusion occurring at a variety of electrode designs were undertaken using Comsol Multiphysics®. Sensor devices were fabricated and corresponding experiments were performed to challenge simulation results. Two approaches for the fabrication and integration of metal nanowire electrodes are presented: Template Electrodeposition and Electron-Beam Lithography. These approaches allow for the fabrication of nanowires which may be subsequently integrated at silicon chip substrates to form fully functional electrochemical devices. Simulated and experimental results were found to be in excellent agreement validating the simulation model. The electrochemical characteristics exhibited by nanowire electrodes fabricated by electronbeam lithography were directly compared against electrochemical performance of a commercial ultra-microdisc electrode. Steady-state cyclic voltammograms in ferrocenemonocarboxylic acid at single ultra-microdisc electrodes were observed at low to medium scan rates (≤ 500 mV.s-1). At nanowires, steady-state responses were observed at ultra-high scan rates (up to 50,000 mV.s-1), thus allowing for much faster analysis (20 ms). Approaches for elucidating faradaic signal without the requirement for background subtraction were also developed. Furthermore, diffusional process occurring at arrays with increasing inter-electrode distance and increasing number of nanowires were explored. Diffusion profiles existing at nanowire arrays were simulated with Comsol Multiphysics®. A range of scan rates were modelled, and experiments were undertaken at 5,000 mV.s-1 since this allows rapid data capture required for, e.g., biomedical, environmental and pharmaceutical diagnostic applications. Advisors/Committee Members: O'Riordan, Alan.

Subjects/Keywords: Nanotechnology; Nanowire electrodes; Electrochemistry; Electroanalysis

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APA (6^th Edition):

Wahl, A. (2013). Fabrication, characterisation and electroanalysis at 1-dimensional nanostructures. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/1740

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Wahl, Amélie. “Fabrication, characterisation and electroanalysis at 1-dimensional nanostructures.” 2013. Thesis, University College Cork. Accessed July 21, 2019. http://hdl.handle.net/10468/1740.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Wahl, Amélie. “Fabrication, characterisation and electroanalysis at 1-dimensional nanostructures.” 2013. Web. 21 Jul 2019.

Vancouver:

Wahl A. Fabrication, characterisation and electroanalysis at 1-dimensional nanostructures. [Internet] [Thesis]. University College Cork; 2013. [cited 2019 Jul 21]. Available from: http://hdl.handle.net/10468/1740.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wahl A. Fabrication, characterisation and electroanalysis at 1-dimensional nanostructures. [Thesis]. University College Cork; 2013. Available from: http://hdl.handle.net/10468/1740

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Penn State University

24. Krishnasamy Bharathi, Arvind. ANALYSIS OF THE THERMAL PROPERTIES OF.

Degree: MS, Mechanical Engineering, 2010, Penn State University

URL: https://etda.libraries.psu.edu/catalog/11497

► The objective of this paper is to determine the thermal conductivity of Zinc Oxide nanowire by equilibrium and non-equilibrium molecular dynamics (EMD and NEMD) simulations… (more)

▼ The objective of this paper is to determine the thermal conductivity of Zinc Oxide nanowire by equilibrium and non-equilibrium molecular dynamics (EMD and NEMD) simulations using the ReaxFF reactive force field [19]. While EMD uses an equilibrated system and statistical averaging; NEMD uses cooling/heating rates in order to calculate the conductivity. The validity of the methods is first verified using Argon as a test case. The thermal conductivity of Argon thus calculated is compared with the results obtained by Bhowmick and Shenoy [69]. We then study the effects of system size using EMD method and effects of periodic boundary conditions - 1D, 2D and bulk variation of conductivity with temperature are analyzed using NEMD simulations. The results obtained compare favorably with those measured experimentally [46][47]. This indicates that the EMD and NEMD methods are reliable alternatives to the traditional Green-Kubo approach [51]; which is traditionally employed in MD-based thermal conductivity determination. In conjunction with ReaxFF, these methods are computationally cheaper than the Green-Kubo method and can be used to determine the thermal conductivity of materials involved in surface chemistry reactions such as catalysis and sintering. The effect of chemistry on the thermal conductivity of Zinc Oxide is studied. Sintering is taken as the chemical process of interest and is simulated using ReaxFF force field for Zinc Oxide [58] in the presence of water. Effect of sintering temperature is also observed. A clear drop in the conductivity of Zinc Oxide due to the formation of hydroxyl grain-boundaries between the different Zinc Oxide clusters is noted. However, this deterioration is smaller when we use higher sintering temperatures. Due to a relatively small number of atoms (960) and the non-homogeneousness of the cluster; (mix of Zinc Oxide and water) the error bars on thermal conductivity are large. This indicates the need for performing larger-scale simulations in order to determine the effect of sintering on thermal-conductivity more accurately.

Subjects/Keywords: nanowire; Zinc Oxide; ReaxFF

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APA (6^th Edition):

Krishnasamy Bharathi, A. (2010). ANALYSIS OF THE THERMAL PROPERTIES OF. (Masters Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/11497

Chicago Manual of Style (16^th Edition):

Krishnasamy Bharathi, Arvind. “ANALYSIS OF THE THERMAL PROPERTIES OF.” 2010. Masters Thesis, Penn State University. Accessed July 21, 2019. https://etda.libraries.psu.edu/catalog/11497.

MLA Handbook (7^th Edition):

Krishnasamy Bharathi, Arvind. “ANALYSIS OF THE THERMAL PROPERTIES OF.” 2010. Web. 21 Jul 2019.

Vancouver:

Krishnasamy Bharathi A. ANALYSIS OF THE THERMAL PROPERTIES OF. [Internet] [Masters thesis]. Penn State University; 2010. [cited 2019 Jul 21]. Available from: https://etda.libraries.psu.edu/catalog/11497.

Council of Science Editors:

Krishnasamy Bharathi A. ANALYSIS OF THE THERMAL PROPERTIES OF. [Masters Thesis]. Penn State University; 2010. Available from: https://etda.libraries.psu.edu/catalog/11497

Penn State University

25. Pan, Suxing. A Novel Approach For Fabricating Nanochannel Templates For Si Nanowire Growth And Transistor Fabrication.

Degree: PhD, Engineering Science and Mechanics, 2013, Penn State University

URL: https://etda.libraries.psu.edu/catalog/18933

► For the past decades, silicon nanowire (SiNW) has been extensively studied due to their unique electric, optical, and mechanical properties and great compatibility with modern… (more)

▼ For the past decades, silicon nanowire (SiNW) has been extensively studied due to their unique electric, optical, and mechanical properties and great compatibility with modern integrated circuits industry. Researchers have successfully demonstrated its potential applications in many fields, such as high performance transistors, high resolution and sensitivity bio and chemical sensors and so on. Scientists even predicted it is most likely that SiNW transistor will become the final winner for the competition of future generation transistor architecture. Therefore, it is very obvious that SiNW has become the rising star for future nanoelectronics. Up to date, many efforts have been devoted to synthesizing SiNW. In general, there are two main categories in terms of SiNW growth methods, and post growth device fabrication and assembly: “grow-and-place” and “grow-in-place”. For “grow-and-place” approach, intensive post growth treatments are needed to fully realize SiNW device application, which leads to higher cost and lower throughput. For “grow-in-place” approach, the SiNW is grown on the substrate, where the final device will be fabricated, and there is no post growth treatments needed. This approach improves the throughput and cost of “grow-in-place” approach. However, it is still a great challenge for realizing mass production of SiNW based device due to the lack of well-controlled nanofabrication techniques with lower cost and higher throughput. To resolve some of these above-mentioned issues, in this thesis, we have developed a novel approach for fabricating nanochannel templates for SiNW growth and further device applications. This method represents “grow-in-place” approach and takes full advantages of “grow-in-place” approaches. However, it has several improvements compared with “grow-in-place” approach in terms of the fabrication of nanochannel templates, and catalyst patterning and control. We have investigated two alternative sacrificial materials for nanochannel templates, which are further used for encapsulated SiNW growth. Those two alternative sacrificial materials are polymers of specified properties and amorphous silicon. Specifically, we have explored the NXR 3022 polymer, which is water soluble, and NXR 1025 polymer, which is general solvent soluble. In addition, we have investigated and optimized the patterning techniques of sacrificial polymer based on the throughput, patterning cost and polymer compatibility with subsequent process steps. Taking into account of all the factors, we have chosen new nanoimprinting lithography to pattern the polymers. Detailed procedures and issues encountered during the nanochannel fabrication process will be discussed. For inorganic amorphous silicon, we have successfully demonstrated its capability as the sacrificial material of nanochannel. The advantages of using amorphous silicon are as follows: process simplicity, great compatibility with further processes as well as its ease of dry removal for forming nanochannels. Through this novel proposed approach, we have…

Subjects/Keywords: Silicon Nanowire; Transistor; AMOSFET

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Pan, S. (2013). A Novel Approach For Fabricating Nanochannel Templates For Si Nanowire Growth And Transistor Fabrication. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/18933

Chicago Manual of Style (16^th Edition):

Pan, Suxing. “A Novel Approach For Fabricating Nanochannel Templates For Si Nanowire Growth And Transistor Fabrication.” 2013. Doctoral Dissertation, Penn State University. Accessed July 21, 2019. https://etda.libraries.psu.edu/catalog/18933.

MLA Handbook (7^th Edition):

Pan, Suxing. “A Novel Approach For Fabricating Nanochannel Templates For Si Nanowire Growth And Transistor Fabrication.” 2013. Web. 21 Jul 2019.

Vancouver:

Pan S. A Novel Approach For Fabricating Nanochannel Templates For Si Nanowire Growth And Transistor Fabrication. [Internet] [Doctoral dissertation]. Penn State University; 2013. [cited 2019 Jul 21]. Available from: https://etda.libraries.psu.edu/catalog/18933.

Council of Science Editors:

Pan S. A Novel Approach For Fabricating Nanochannel Templates For Si Nanowire Growth And Transistor Fabrication. [Doctoral Dissertation]. Penn State University; 2013. Available from: https://etda.libraries.psu.edu/catalog/18933

Penn State University

26. Sarpatwari, Karthik. Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: the Effects of Barrier Inhomogeneities and Geometry in Bulk and Nanoscale Structures.

Degree: PhD, Engineering Science and Mechanics, 2009, Penn State University

URL: https://etda.libraries.psu.edu/catalog/9963

► The work presented in this thesis comprises of two parts. Part I deals with Schottky contacts to the wide bandgap (WBG) semiconductors SiC, GaN and… (more)

▼ The work presented in this thesis comprises of two parts. Part I deals with Schottky contacts to the wide bandgap (WBG) semiconductors SiC, GaN and ZnO. These semiconductors offer great promise for a wide variety of electronic and optoelectronic applications. Schottky barriers to WBG semiconductors are attractive in particular for high temperature/high power diodes, photodetectors, and gas sensors. However, the Schottky barriers exhibit non-ideal behavior, due in part to inhomogeneities originating from immature crystal growth and device processing technologies. Apart from being a versatile electronic component, the Schottky diode is a valuable test structure. The Schottky contact is routinely used to probe substrate and epilayer quality by different electrical characterization techniques. It is well established that the current-voltage-temperature (I-V-T) characteristics of Schottky contacts are routinely affected by the presence of barrier height inhomogeneities (BHI). Consequently, Schottky diode parameters such as the Schottky barrier height and the Richardson constant extracted using the I-V-T measurements can deviate from their actual values. The effects of BHI on the extracted Schottky barrier height have been studied in the literature. However, the effects of BHI on the Richardson constant have not been thoroughly explored and are the focus of the first part of this thesis. Based on the inhomogeneous Schottky barrier model provided by Tung, a new method for the extraction of the Richardson constant is developed. The new method is applied to the Richardson constant determination of n-type ZnO and GaN. Excellent agreement with the theoretical value is obtained in both cases. The advent of the nanoelectronics era has resulted in the Schottky contact evolving from the relatively simple, planar structure into a more complex structure. Compared to bulk Schottky contacts, the Schottky barrier properties are expected to be widely different at the nanoscale. For example, the I-V characteristics of nanoscale Schottky contacts are affected by the contact size and geometry. Due to the increased surface-to-volume ratio, the conduction properties of nanoscale Schottky contacts are also influenced by surface conditions such as surface charge and traps. Depending on contact size, geometry and surface conditions, an enhanced tunneling current contribution can be expected, further distorting the I-V characteristics from the simple thermionic emission model. Determination of the true Schottky barrier height in nanoscale contacts to semiconductor nanowires is important from both technological and fundamental scientific perspectives. In the second part of this thesis, we employ a simulation-based approach to study the conduction properties of an axial Schottky nanocontact to a surround-gate nanowire. A systematic study of the effects of surface charge on the I-V characteristics of the axial nano Schottky/nanowire system is undertaken. Based on the study, a method is proposed to extract the true Schottky barrier height from the…

Subjects/Keywords: Schottky barrier diodes; Nanowire

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APA (6^th Edition):

Sarpatwari, K. (2009). Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: the Effects of Barrier Inhomogeneities and Geometry in Bulk and Nanoscale Structures. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/9963

Chicago Manual of Style (16^th Edition):

Sarpatwari, Karthik. “Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: the Effects of Barrier Inhomogeneities and Geometry in Bulk and Nanoscale Structures.” 2009. Doctoral Dissertation, Penn State University. Accessed July 21, 2019. https://etda.libraries.psu.edu/catalog/9963.

MLA Handbook (7^th Edition):

Sarpatwari, Karthik. “Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: the Effects of Barrier Inhomogeneities and Geometry in Bulk and Nanoscale Structures.” 2009. Web. 21 Jul 2019.

Vancouver:

Sarpatwari K. Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: the Effects of Barrier Inhomogeneities and Geometry in Bulk and Nanoscale Structures. [Internet] [Doctoral dissertation]. Penn State University; 2009. [cited 2019 Jul 21]. Available from: https://etda.libraries.psu.edu/catalog/9963.

Council of Science Editors:

Sarpatwari K. Toward Understanding the Electrical Properties of Metal/Semiconductor Schottky Contacts: the Effects of Barrier Inhomogeneities and Geometry in Bulk and Nanoscale Structures. [Doctoral Dissertation]. Penn State University; 2009. Available from: https://etda.libraries.psu.edu/catalog/9963

Penn State University

27. Kuo, Meng-wei. Bottom-up and top-down fabrication of nanowire-based electronic devices:.

Degree: PhD, Electrical Engineering, 2013, Penn State University

URL: https://etda.libraries.psu.edu/catalog/18353

► Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up… (more)

▼ Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p+-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal non-uniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMB-doped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperature-dependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly higher leakage current and a current kink in the reverse bias regime, which is likely due to additional trap states created by plasma-induced damage during the Cl2/Ar/H2 mesa isolation step. These states extend more than 60 nm from the mesa surface and can only be partially passivated after a thermal anneal at 350 °C for 20 minutes. The evolution of the electrical properties with post-dry etch treatments indicates that the shallow and deep-level trap states resulting from ion-induced point defects, arsenic vacancies and hydrogen-dopant complexes are the primary cause of degradation in the electrical properties of the dry-etched junctions.

Subjects/Keywords: nanowire; VLS; InGaAs; tunnel

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APA (6^th Edition):

Kuo, M. (2013). Bottom-up and top-down fabrication of nanowire-based electronic devices:. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/18353

Chicago Manual of Style (16^th Edition):

Kuo, Meng-wei. “Bottom-up and top-down fabrication of nanowire-based electronic devices:.” 2013. Doctoral Dissertation, Penn State University. Accessed July 21, 2019. https://etda.libraries.psu.edu/catalog/18353.

MLA Handbook (7^th Edition):

Kuo, Meng-wei. “Bottom-up and top-down fabrication of nanowire-based electronic devices:.” 2013. Web. 21 Jul 2019.

Vancouver:

Kuo M. Bottom-up and top-down fabrication of nanowire-based electronic devices:. [Internet] [Doctoral dissertation]. Penn State University; 2013. [cited 2019 Jul 21]. Available from: https://etda.libraries.psu.edu/catalog/18353.

Council of Science Editors:

Kuo M. Bottom-up and top-down fabrication of nanowire-based electronic devices:. [Doctoral Dissertation]. Penn State University; 2013. Available from: https://etda.libraries.psu.edu/catalog/18353

Georgia Tech

28. Sivaram, Saujan Venkat. The impact of surface chemistry on stable semiconductor nanowire growth.

Degree: PhD, Chemical and Biomolecular Engineering, 2015, Georgia Tech

URL: http://hdl.handle.net/1853/55509

► The vapor-liquid-solid (VLS) mechanism – whereby a liquid eutectic “catalyst” droplet collects precursor molecules (or atoms) from the vapor and directs crystallization of the solid… (more)

▼ The vapor-liquid-solid (VLS) mechanism – whereby a liquid eutectic “catalyst” droplet collects precursor molecules (or atoms) from the vapor and directs crystallization of the solid nanowire – is a ubiquitous method for bottom-up nanowire synthesis. In this thesis, we use in situ infrared absorption spectroscopy to identify the previously unknown, yet critical, role of reactive surface intermediates on semiconductor nanowire synthesis. We quantitatively determine the surface coverage of hydrogen atoms by coupling operando measurements with a novel in situ surface titration and show these adsorbates are vital for stable Ge nanowire growth. In the second part of the thesis, we use in situ spectroscopy to explore the interplay between the supercooled AuGe catalyst state and surface chemistry. We find a strong correlation between loss of surface hydrogen and catalyst solidification. To unambiguously identify the influence of surface chemistry on the supercooled AuGe catalyst, we deliver atomic hydrogen to the nanowire sidewall, which prevents Au migration from the supercooled catalyst and preserves the liquid catalyst state in the absence of Ge2H6 flow. We conclude that solidification likely occurs via heterogeneous nucleation in the presence of solid particles near the trijunction region and present general strategies to maintain the supercooled catalyst state in other material systems. Our experiments identify a key chemical mechanism underlying nanowire growth via chemical vapor deposition and demonstrate that changes to surface bonding are critical to understand nanowire synthesis. The fundamental insights shown promise unprecedented control of nanowire structure and function by providing a chemical foundation for rational synthetic design. Advisors/Committee Members: Filler, Michael A. (advisor), Grover, Martha A. (committee member), Henderson, Clifford L. (committee member), Fedorov, Andrei G. (committee member), Bongiorno, Angelo (committee member).

Subjects/Keywords: Nanowire; Semiconductor; Synthesis; Spectroscopy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Sivaram, S. V. (2015). The impact of surface chemistry on stable semiconductor nanowire growth. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55509

Chicago Manual of Style (16^th Edition):

Sivaram, Saujan Venkat. “The impact of surface chemistry on stable semiconductor nanowire growth.” 2015. Doctoral Dissertation, Georgia Tech. Accessed July 21, 2019. http://hdl.handle.net/1853/55509.

MLA Handbook (7^th Edition):

Sivaram, Saujan Venkat. “The impact of surface chemistry on stable semiconductor nanowire growth.” 2015. Web. 21 Jul 2019.

Vancouver:

Sivaram SV. The impact of surface chemistry on stable semiconductor nanowire growth. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 Jul 21]. Available from: http://hdl.handle.net/1853/55509.

Council of Science Editors:

Sivaram SV. The impact of surface chemistry on stable semiconductor nanowire growth. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/55509

Louisiana State University

29. Gupta, Mayank. Electrodeposited Cu-based Catalysts for Alcohols from CO Hydrogenation and Electrodeposition of CuNiW/CuNi Multilayered Alloys.

Degree: PhD, Chemical Engineering, 2010, Louisiana State University

URL: etd-04162010-184914 ; https://digitalcommons.lsu.edu/gradschool_dissertations/3061

► Ethanol and higher alcohols can be used as a fuel or fuel additive in gasoline engines as well as a hydrogen carrier. One of the… (more)

▼ Ethanol and higher alcohols can be used as a fuel or fuel additive in gasoline engines as well as a hydrogen carrier. One of the promising methods to synthesize these alcohols is based on thermochemical conversion of CO and H2 (CO hydrogenation). Conventional catalysts used for the conversion CO and H2 (syngas) to ethanol typically give yields less than 20% with the balance resulting mostly in the formation of the thermodynamically favored products CH4 and CO2. New catalysts with compositions designed to kinetically favor the formation of ethanol and higher alcohols are needed. Electrodeposition of nanowires offers a means to control the surface properties of multimetallic catalysts in a way that is not possible with conventional catalyst preparation methods such as co-precipitation and impregnation. A principle advantage of electrodeposition over conventional methods centers on its ability to control the active metal environment at the atomic level. In this work, Cu-ZnO and Mn-Cu-ZnO novel nanowire/tube catalysts have been prepared by electrodeposition using a template synthesis technique. To the best of our knowledge, electrodeposited Cu-based nanowires have never been used as heterogeneous catalysts. Different current and pulsed current schemes were used to control composition and morphology of the resulting nanowire/tube catalysts. Pulse waveforms with suitable on-time (cathodic current) and off-times (no current) were used to tailor the atomic environment of the nanowire catalysts. A fixed bed tubular reactor was used to synthesize alcohols from CO and H2 (syngas). In addition to C2-C4 alcohols products of interest, methanol, methane, propylene, and CO2 were the main side products at various reaction conditions. The reaction was performed at varying temperature (250C-310C), pressure (10-20 bar), H2/CO ratio (1-3), and GHSV (7,500-33,000 scc/h-gcat). The addition of Mn to the Cu-ZnO catalyst increased the selectivity toward ethanol and higher alcohols by reducing methanation. Schulz-Flory distributions of the products suggest that the synthesis of alcohols and hydrocarbons require different sites.

Subjects/Keywords: electrodeposition; catalyst; ethanol; alcohols; nanowire

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Gupta, M. (2010). Electrodeposited Cu-based Catalysts for Alcohols from CO Hydrogenation and Electrodeposition of CuNiW/CuNi Multilayered Alloys. (Doctoral Dissertation). Louisiana State University. Retrieved from etd-04162010-184914 ; https://digitalcommons.lsu.edu/gradschool_dissertations/3061

Chicago Manual of Style (16^th Edition):

Gupta, Mayank. “Electrodeposited Cu-based Catalysts for Alcohols from CO Hydrogenation and Electrodeposition of CuNiW/CuNi Multilayered Alloys.” 2010. Doctoral Dissertation, Louisiana State University. Accessed July 21, 2019. etd-04162010-184914 ; https://digitalcommons.lsu.edu/gradschool_dissertations/3061.

MLA Handbook (7^th Edition):

Gupta, Mayank. “Electrodeposited Cu-based Catalysts for Alcohols from CO Hydrogenation and Electrodeposition of CuNiW/CuNi Multilayered Alloys.” 2010. Web. 21 Jul 2019.

Vancouver:

Gupta M. Electrodeposited Cu-based Catalysts for Alcohols from CO Hydrogenation and Electrodeposition of CuNiW/CuNi Multilayered Alloys. [Internet] [Doctoral dissertation]. Louisiana State University; 2010. [cited 2019 Jul 21]. Available from: etd-04162010-184914 ; https://digitalcommons.lsu.edu/gradschool_dissertations/3061.

Council of Science Editors:

Gupta M. Electrodeposited Cu-based Catalysts for Alcohols from CO Hydrogenation and Electrodeposition of CuNiW/CuNi Multilayered Alloys. [Doctoral Dissertation]. Louisiana State University; 2010. Available from: etd-04162010-184914 ; https://digitalcommons.lsu.edu/gradschool_dissertations/3061

University of California – Merced

30. Hujdic, Justin. Lead selenide nanowire solar cells via LPNE and its new found derivatives.

Degree: Chemistry and Chemical Biology, 2012, University of California – Merced

URL: http://www.escholarship.org/uc/item/9hw977qp

► Solar energy has yet to break into the mainstream market mainly due to its elevated cost relative to its competitors. I introduce the ability to… (more)

Subjects/Keywords: Chemistry; nanowire; solar cells

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Hujdic, J. (2012). Lead selenide nanowire solar cells via LPNE and its new found derivatives. (Thesis). University of California – Merced. Retrieved from http://www.escholarship.org/uc/item/9hw977qp

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Hujdic, Justin. “Lead selenide nanowire solar cells via LPNE and its new found derivatives.” 2012. Thesis, University of California – Merced. Accessed July 21, 2019. http://www.escholarship.org/uc/item/9hw977qp.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Hujdic, Justin. “Lead selenide nanowire solar cells via LPNE and its new found derivatives.” 2012. Web. 21 Jul 2019.

Vancouver:

Hujdic J. Lead selenide nanowire solar cells via LPNE and its new found derivatives. [Internet] [Thesis]. University of California – Merced; 2012. [cited 2019 Jul 21]. Available from: http://www.escholarship.org/uc/item/9hw977qp.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hujdic J. Lead selenide nanowire solar cells via LPNE and its new found derivatives. [Thesis]. University of California – Merced; 2012. Available from: http://www.escholarship.org/uc/item/9hw977qp

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Open Access Theses and Dissertations