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University of Waterloo
1.
Vafaei, Arash.
Simple, economical methods for electrical access to nanostructures used for characterizing and welding individual silver nanowires.
Degree: 2013, University of Waterloo
URL: http://hdl.handle.net/10012/7825 
► Elongated nanostructures have attracted a great deal of interest due to unique optical, electrical and physical properties. In particular, silver nanowires and nanobeams have proven…
(more)
▼ Elongated nanostructures have attracted a great deal of interest due to unique optical, electrical and physical properties. In particular, silver nanowires and nanobeams have proven to be top contenders for a variety of applications. Due to their nano-sized dimensions, however, electrical access to individual nanowires is difficult and expensive. Here, a simple and economical procedure was designed to electrically contact small elongated structures using common facilities available at most universities. A common lithographic procedure is used to pattern gold pads and electrodes on top of nanowires already dispersed on a substrate.
This process is tested by first characterizing, using a 4-point-probe measurement, a novel nanobeam created by fusing silver nanodisks. The resistivity of the nanobeams was found to be as low as 2.7x10^−8 Ω·m, which is only slightly above that of bulk silver. These measurements corroborate modeling done by another group that the nanodisks align to create a nearly continuous crystal rather than disjointed grains.
In the second application, Joule-heating was used to actualize a reliable weld between silver nanowires synthesized using the polyol method. The nanowires were situated in series between two metal pads, and a procedure was designed to use electrical current to break down intermediate layers without destroying the nanowires themselves.
In the last enterprise, individual silver nanowires were isolated between two gold pads and then using the same electrical recipe used for welding nanowires, the contact resistance was reduced to a negligible portion of its original value. It was found that due to the reduction in contact resistance, the 2-point-probe resistivity of the nanowire was similar to those conducted using 4 probes. The invented procedure can thus allow accurate resistivity measurements of individual metal nanowires to be done with only 2 contacts rather than 4, thereby simplifying contact fabrication and allowing appropriate contacts to be deposited on nanowires as short as 4 μm using standard photolithography.
Subjects/Keywords: nanowire; nanowelding
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APA (6th Edition):
Vafaei, A. (2013). Simple, economical methods for electrical access to nanostructures used for characterizing and welding individual silver nanowires. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/7825
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Vafaei, Arash. “Simple, economical methods for electrical access to nanostructures used for characterizing and welding individual silver nanowires.” 2013. Thesis, University of Waterloo. Accessed March 01, 2021.
http://hdl.handle.net/10012/7825.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Vafaei, Arash. “Simple, economical methods for electrical access to nanostructures used for characterizing and welding individual silver nanowires.” 2013. Web. 01 Mar 2021.
Vancouver:
Vafaei A. Simple, economical methods for electrical access to nanostructures used for characterizing and welding individual silver nanowires. [Internet] [Thesis]. University of Waterloo; 2013. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/10012/7825.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Vafaei A. Simple, economical methods for electrical access to nanostructures used for characterizing and welding individual silver nanowires. [Thesis]. University of Waterloo; 2013. Available from: http://hdl.handle.net/10012/7825
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
2.
Le, Son T.
GERMANIUM AND SIGE NANOWIRE TUNNELING TRANSISTORS AND SOLAR
CELLS.
Degree: PhD, Physics, 2014, Brown University
URL: https://repository.library.brown.edu/studio/item/bdr:386127/
► As the CMOS downscaling continues, the requirements for lower power supply voltage and power consumption become more stringent. New device operating principles and new material…
(more)
▼ As the CMOS downscaling continues, the requirements
for lower power supply voltage and power consumption become more
stringent. New device operating principles and new material
platforms are being explored. Among them, band to band tunneling
and vapor-liquid-solid grown semiconductor hetero-nanowires
(hetero-NWs) are promising candidates as a new device operating
principle and a new material platform for future high-performance
switching devices, respectively. This thesis focuses on exploring
the possibility of utilizing Ge and SiGe nanowires for tunneling
field effect transistors (TFETs). Similar SiGe hetero-NW material
is also studied for photovoltaic applications. First, we explore Ge
NWs, where strong back-gate modulation of band-to-band tunneling in
the axial p-n junction was characterized and modeled. Top-gated Ge
NW TFETs shows promisingly high ION~20 μA/μm current with the
possibility of achieving better subthreshold slope and ION/IOFF
current ratio by improved surface passivation. Second, axial SiGe
hetero-NW TFETs with ~50 mV/decade subthreshold slope were grown,
fabricated, characterized and confirmed by 3D TCAD simulation.
These devices exhibited record Si-compatible TFET performance, with
high ION ~2 µA/μm and ~5 orders of magnitude ION/IOFF ratio. The
same devices could be operated in standard NW FET mode with good
performance. Finally, we explore the possibility of employing axial
p-i-n/p-i-n junction SiGe hetero-NWs as broad-spectrum tandem solar
cells. Preliminary numerical and experimental studies were carried
out for axial p-i-n Si NWs, axial p-n Ge NWs, and axial p-i-n/p-i-n
SiGe hetero-NWs to characterize device performance. The thesis
concludes with future directions, including the possibility of a
novel SiGe hetero-NW electroluminescent optical
source.
Advisors/Committee Members: Alexander, Zaslavsky (Director), Humphrey, Maris (Reader), James, Valles (Reader).
Subjects/Keywords: Germanium nanowire
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APA (6th Edition):
Le, S. T. (2014). GERMANIUM AND SIGE NANOWIRE TUNNELING TRANSISTORS AND SOLAR
CELLS. (Doctoral Dissertation). Brown University. Retrieved from https://repository.library.brown.edu/studio/item/bdr:386127/
Chicago Manual of Style (16th Edition):
Le, Son T. “GERMANIUM AND SIGE NANOWIRE TUNNELING TRANSISTORS AND SOLAR
CELLS.” 2014. Doctoral Dissertation, Brown University. Accessed March 01, 2021.
https://repository.library.brown.edu/studio/item/bdr:386127/.
MLA Handbook (7th Edition):
Le, Son T. “GERMANIUM AND SIGE NANOWIRE TUNNELING TRANSISTORS AND SOLAR
CELLS.” 2014. Web. 01 Mar 2021.
Vancouver:
Le ST. GERMANIUM AND SIGE NANOWIRE TUNNELING TRANSISTORS AND SOLAR
CELLS. [Internet] [Doctoral dissertation]. Brown University; 2014. [cited 2021 Mar 01].
Available from: https://repository.library.brown.edu/studio/item/bdr:386127/.
Council of Science Editors:
Le ST. GERMANIUM AND SIGE NANOWIRE TUNNELING TRANSISTORS AND SOLAR
CELLS. [Doctoral Dissertation]. Brown University; 2014. Available from: https://repository.library.brown.edu/studio/item/bdr:386127/
3.
Hsu, Chih-Hsun.
Realization of New Form of Carbon-Diamond
Nanowire – Synthesis, Characterization and Applications.
Degree: PhD, Electrical Science and Computer
Engineering, 2010, Brown University
URL: https://repository.library.brown.edu/studio/item/bdr:11151/
► This dissertation focuses on the synthesis and validation of a new form of carbon, diamond nanowire, which was grown in an atmospheric pressure chemical vapor…
(more)
▼ This dissertation focuses on the synthesis and
validation of a new form of carbon, diamond
nanowire, which was
grown in an atmospheric pressure chemical vapor deposition (CVD)
process. These diamond nanowires are straight, thin and long, and
uniform in diameter (60-90 nm) over the entire lengths of tens of
microns. Spectroscopic analysis, electron diffraction and
transmission electron microscopy provided confirmation that these
nanowires are diamond with high crystallinity and high structural
uniformity. They further revealed that these diamond nanowires are
encased within multi-walled carbon nanotubes. Single
nanowire field
emission measurements revealed that the diamond
nanowire possesses
excellent field emission characteristics such as a high field
enhancement factor (orders of magnitude) and low threshold field
(four times lower) compared to the best known published results on
carbon nanotube. We successfully transferred nanowires from the
original substrate onto oxidized silicon and patterned contacts
with electron beam lithography. The nanowires are expected to
perform as UV detection devices after the device fabrication
development is finished. Besides the CVD synthesis route, diamond
nanowires were also fabricated using a reactive ion etching (RIE)
process. This method allows for reliable control of the shape,
length, diameter, density, and doping of the diamond nanowires.
Finally, we demonstrated the fabrication of a laterally aligned
diamond
nanowire array using Atomic Image Projection E-beam
Lithography (AIPEL) technique. The large surface to volume ratio,
as well as the ultra-high packing density of the nanowires make it
an excellent candidate for application to UV
detection.
Advisors/Committee Members: Xu, Jimmy (Director), Tripathi, Anubhav (Reader), Zia, Rashid (Reader).
Subjects/Keywords: Diamond Nanowire
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APA (6th Edition):
Hsu, C. (2010). Realization of New Form of Carbon-Diamond
Nanowire – Synthesis, Characterization and Applications. (Doctoral Dissertation). Brown University. Retrieved from https://repository.library.brown.edu/studio/item/bdr:11151/
Chicago Manual of Style (16th Edition):
Hsu, Chih-Hsun. “Realization of New Form of Carbon-Diamond
Nanowire – Synthesis, Characterization and Applications.” 2010. Doctoral Dissertation, Brown University. Accessed March 01, 2021.
https://repository.library.brown.edu/studio/item/bdr:11151/.
MLA Handbook (7th Edition):
Hsu, Chih-Hsun. “Realization of New Form of Carbon-Diamond
Nanowire – Synthesis, Characterization and Applications.” 2010. Web. 01 Mar 2021.
Vancouver:
Hsu C. Realization of New Form of Carbon-Diamond
Nanowire – Synthesis, Characterization and Applications. [Internet] [Doctoral dissertation]. Brown University; 2010. [cited 2021 Mar 01].
Available from: https://repository.library.brown.edu/studio/item/bdr:11151/.
Council of Science Editors:
Hsu C. Realization of New Form of Carbon-Diamond
Nanowire – Synthesis, Characterization and Applications. [Doctoral Dissertation]. Brown University; 2010. Available from: https://repository.library.brown.edu/studio/item/bdr:11151/
Penn State University
4.
Winter, Christopher Aylwin.
Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach
.
Degree: 2011, Penn State University
URL: https://submit-etda.libraries.psu.edu/catalog/11658
► For nearly a decade silicon nanowires have been the subject of intense research. Future integration of silicon nanowires into commercial devices requires the development and…
(more)
▼ For nearly a decade silicon nanowires have been the
subject of intense research. Future integration of silicon nanowires into commercial devices requires the development and further refinement of methods for synthesizing and assembling these nanowires into densely packed rational structures with high accuracy and repeatability. Current methods have two broad classifications: “grow-and-place” and “grow-in-place”. The former procedure involves forming the nanowires away from their final orientation, harvesting them from this growth area, and finally placing them in desired positions. The latter procedure sidesteps the problems associated with the harvesting and placement steps of the “grow-and-place” method by forming the nanowires in their final preferred arrangement.
In this thesis, we propose a novel self-assembling variation of the “grow-in-place” approach for SiNW growth where the interfacial area of the nanochannel template interface can be formed out of various materials. This research has improved on our group’s previous in-template “grow-in-place” approach by growing SiNWs with smooth morphology and good electrical properties upon partial exposure while still retaining the benefits of the original “grow-in-place” approach, including good control of the SiNW size, number, orientation, position, and shape. The SiNWs grown using this approach were found to be morphologically smooth, composed of crystalline silicon and exhibited good electrical characteristics.
Additionally, in this thesis we explore the use of a metal adhesion layer as a means of controlling SiNW electrical characteristics. Specifically, this thesis compared
iii
electrical characteristics of SiNWs grown using aluminum or titanium as an adhesion layer versus SiNWs grown without an adhesion layer and found that the SiNWs grown with aluminum or titanium as an adhesion layer were, on average, 6 or 9 times, respectively, more conductive than the SiNWs grown without an adhesion layer.
Finally, this thesis presents evidence that nanowires grown using built-in platinum contacts form in a dual-material structure. This evidence is in the form of high- magnification FESEM images. It is suggested that, in the inter-contact region, the platinum silicide grew as the “shell” of the
nanowire structure and that the core remained silicon because of the physical configuration of the nanochannel.
Advisors/Committee Members: Stephen Fonash, Thesis Advisor/Co-Advisor, Stephen Joseph Fonash, Thesis Advisor/Co-Advisor, Jun Huang, Thesis Advisor/Co-Advisor, Jerzy Ruzyllo, Thesis Advisor/Co-Advisor.
Subjects/Keywords: silicon nanowire; growth
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APA (6th Edition):
Winter, C. A. (2011). Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach
. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/11658
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Winter, Christopher Aylwin. “Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach
.” 2011. Thesis, Penn State University. Accessed March 01, 2021.
https://submit-etda.libraries.psu.edu/catalog/11658.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Winter, Christopher Aylwin. “Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach
.” 2011. Web. 01 Mar 2021.
Vancouver:
Winter CA. Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach
. [Internet] [Thesis]. Penn State University; 2011. [cited 2021 Mar 01].
Available from: https://submit-etda.libraries.psu.edu/catalog/11658.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Winter CA. Improvement and Investigation of Silicon Nanowire "Grow-In-Place" Approach
. [Thesis]. Penn State University; 2011. Available from: https://submit-etda.libraries.psu.edu/catalog/11658
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
University of Southern California
5.
Madaria, Anuj Rahul.
Synthesis, characterization and application of metal and
semiconductor nanowires.
Degree: PhD, Materials Science and Engineering, 2012, University of Southern California
URL: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6296
► Nanostructured materials such as nanowires have attracted significant attention in the past two decades. Both metallic and semiconducting nanowires have been demonstrated as important building…
(more)
▼ Nanostructured materials such as nanowires have
attracted significant attention in the past two decades. Both
metallic and semiconducting nanowires have been demonstrated as
important building blocks for numerous electronic and
optoelectronic device applications. In this thesis, we have
demonstrated a scalable route for synthesizing vertically aligned
semiconducting nanowires using nanosphere lithography (NSL)
technique in combination with selected area metal organic chemical
vapor deposition (SA-MOCVD). Comparable optical properties were
observed between the nanowires produced by NSL patterning technique
and nanowires produced by using more expensive and slow electron
beam lithography. We have also used capacitance-voltage measurement
technique to determine the doping level in these
nanowire arrays.
In metallic nanowires, we have demonstrated fabrication of high
performance transparent conductive electrodes by using Ag nanowires
and proposed a technique to synthesis thin Ag nanowires which can
have applications in various optoelectronic devices. ❧ This
dissertation describes the above-mentioned aspects in detail and
accordingly consists of seven chapters. Following an overview and
an introduction of fundamental knowledge of nanolithography and
transparent conductive electrodes in Chapter 1, Chapter 2 discusses
the scalable nanosphere lithography patterning and selected area
growth of vertically aligned GaAs
nanowire arrays, a route towards
optimized optical absorption and reflection. ❧ Chapter 3 discusses
the continued work on GaAs
nanowire array and employs the use of
capacitance-voltage measurement technique to determine the doping
level of these nanowires which is important for using these
nanowires for fabrication of any electronic devices. ❧ Chapter 4
deals with an important issue of replacement of traditional ITO as
a transparent conductive electrode (TCE) for optoelectronic
devices. There is a need for replacement of ITO due to several
drawback associated with ITO as will be discussed in detail in the
chapter. We demonstrate the viability of silver
nanowire based
random network film as a potential replacement. We achieve
remarkable performance in terms of sheet resistance and
transparency which rivals that of ITO, supporting a very strong
case for Ag
nanowire film. We combine traditional spray coating
technique with novel Ag nanowires to fabricate high performance
TCE. In chapter 5, we further improve the performance of the TCE
produced by Ag nanowires by using a dry transfer technique
demonstrating a performance comparable to ITO and much better than
other potential candidates that can be used as TCE. ❧ In chapter 6
we addressed an important issue associated with using Ag nanowires
as a future candidate for TCE by proposing a technique to synthesis
thin Ag nanowires which can find application in optoelectronic
device. ❧ Finally in chapter 7, we conclude by discussing the
future directions and work that needs to be done in order to carry
forward the advance made in this thesis.
Advisors/Committee Members: Zhou, Chongwu (Committee Chair), Dapkus, Paul Daniel (Committee Member), Goo, Edward (Committee Member).
Subjects/Keywords: nanowire; semiconductor; metal
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APA (6th Edition):
Madaria, A. R. (2012). Synthesis, characterization and application of metal and
semiconductor nanowires. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6296
Chicago Manual of Style (16th Edition):
Madaria, Anuj Rahul. “Synthesis, characterization and application of metal and
semiconductor nanowires.” 2012. Doctoral Dissertation, University of Southern California. Accessed March 01, 2021.
http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6296.
MLA Handbook (7th Edition):
Madaria, Anuj Rahul. “Synthesis, characterization and application of metal and
semiconductor nanowires.” 2012. Web. 01 Mar 2021.
Vancouver:
Madaria AR. Synthesis, characterization and application of metal and
semiconductor nanowires. [Internet] [Doctoral dissertation]. University of Southern California; 2012. [cited 2021 Mar 01].
Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6296.
Council of Science Editors:
Madaria AR. Synthesis, characterization and application of metal and
semiconductor nanowires. [Doctoral Dissertation]. University of Southern California; 2012. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/203024/rec/6296
6.
Hui, Ho Yee.
Understand and advancing of semiconductor nanowire synthesis.
Degree: PhD, Chemical and Biomolecular Engineering, 2017, Georgia Tech
URL: http://hdl.handle.net/1853/58314
► Semiconductor nanowires (NWs) have become an indispensable nanoscale platform for a broad range of electronic, photonic, and energy conversion applications. Among all growth technique, the…
(more)
▼ Semiconductor nanowires (NWs) have become an indispensable nanoscale platform for a broad range of electronic, photonic, and energy conversion applications. Among all growth technique, the bottom-up vapor-liquid-solid (VLS)
nanowire (NW) fabrication technique offers the ability to encode material functionalities along the length of a NW in a user programmable manner. A robust control of VLS growth requires understanding of multiple heterogeneous chemical processes: (1) transportation of semiconductor molecules/atoms from vapor to liquid droplets or vice versa at the vapor-liquid (VL) interface, (2) crystallization and dissolution of semiconductor atoms at the liquid-solid (LS) interface, and (3) the conformal deposition of precursor molecules onto the
nanowire sidewall at the vapor-solid (VS) interface. However, the ability to rationally engineer NWs for advanced semiconductor devices is critically impaired by limited understanding of these chemical processes at the heterogeneous interfaces. Here, through experiments and modeling, nanowires can be selectively removed via solid-liquid-vapor mechanism at the VL and LS interfaces. Similarly, the importance of adsorbates from a prior study at the VS interface is leveraged to fabricate large-area arrays of high quality axial Si/Ge heterostructures for the first time. These findings open the door to engineer
nanowire structures along the
nanowire length, a capability that can be applied to applications from high performance electronics to ultra-sensitivities (bio) molecular sensors.
Advisors/Committee Members: Filler, Michael A. (advisor), Reichmanis, Elsa (committee member), Grover, Martha A. (committee member), Xia, Younan (committee member), Bassiri-Gharb, Nazanin (committee member).
Subjects/Keywords: Semiconductor nanowire; Nanomaterial
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APA (6th Edition):
Hui, H. Y. (2017). Understand and advancing of semiconductor nanowire synthesis. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58314
Chicago Manual of Style (16th Edition):
Hui, Ho Yee. “Understand and advancing of semiconductor nanowire synthesis.” 2017. Doctoral Dissertation, Georgia Tech. Accessed March 01, 2021.
http://hdl.handle.net/1853/58314.
MLA Handbook (7th Edition):
Hui, Ho Yee. “Understand and advancing of semiconductor nanowire synthesis.” 2017. Web. 01 Mar 2021.
Vancouver:
Hui HY. Understand and advancing of semiconductor nanowire synthesis. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/1853/58314.
Council of Science Editors:
Hui HY. Understand and advancing of semiconductor nanowire synthesis. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/58314
Harvard University
7.
Choe, Hwan Sung.
Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing.
Degree: PhD, Physics, 2013, Harvard University
URL: http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158237
► For the last decade, semiconducting nanowires synthesized by bottom-up methods have opened up new opportunities, stimulated innovative scientific research, and led to applications in materials…
(more)
▼ For the last decade, semiconducting nanowires synthesized by bottom-up methods have opened up new opportunities, stimulated innovative scientific research, and led to applications in materials science, electronics, optics, and biology at the nanoscale. Notably, nanowire building blocks with precise control of size, structure, morphology, and even composition in one, two, and three dimensions can successfully demonstrate high-performance electrical characteristics of field-effect transistors (FETs) and highly sensitive, selective, label-free, real-time biosensors in the fields of nanoelectronics and nano-biosensing, respectively. This thesis has focused on the design, synthesis, assembly, fabrication and electrical characterization of nanowire heterostructures for a proof-of-concept nanoprocessor and morphology-modulated kinked nanowire molecular nanosensor.
Physics
Advisors/Committee Members: Lieber, Charles M. (advisor), Park, Hongkun (committee member), Cohen, Adam (committee member).
Subjects/Keywords: Nanotechnology; Electrical engineering; Nanoscience; biosensor; electrochemical sensor; nanowire circuit; nanowire synthesis; Semiconductor nanowire
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APA ·
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APA (6th Edition):
Choe, H. S. (2013). Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing. (Doctoral Dissertation). Harvard University. Retrieved from http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158237
Chicago Manual of Style (16th Edition):
Choe, Hwan Sung. “Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing.” 2013. Doctoral Dissertation, Harvard University. Accessed March 01, 2021.
http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158237.
MLA Handbook (7th Edition):
Choe, Hwan Sung. “Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing.” 2013. Web. 01 Mar 2021.
Vancouver:
Choe HS. Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing. [Internet] [Doctoral dissertation]. Harvard University; 2013. [cited 2021 Mar 01].
Available from: http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158237.
Council of Science Editors:
Choe HS. Modulated Nanowire Structures for Exploring New Nanoprocessor Architectures and Approaches to Biosensing. [Doctoral Dissertation]. Harvard University; 2013. Available from: http://nrs.harvard.edu/urn-3:HUL.InstRepos:11158237
University of Texas – Austin
8.
Hong, Ki-Pyo, M.S. in Engineering.
Rational fabrication, assembling and actuation of nanowire multi-mer nanomotors.
Degree: MSin Engineering, Mechanical Engineering, 2015, University of Texas – Austin
URL: http://hdl.handle.net/2152/46976
► Direct field induced manipulations of nanowires have been recognized as a possible alternative to conventional chemical based assembling techniques. In particular, manipulation of nanowires with…
(more)
▼ Direct field induced manipulations of nanowires have been recognized as a possible alternative to conventional chemical based assembling techniques. In particular, manipulation of nanowires with an external electric field allows the facile and precision assembly of nanowires into various nanoscale devices. In this study, we have rationally synthesized multisegment Au/Ni nanowires and assembled them into a unique type of rotary nanomotors made of
nanowire multi-mers with designed geometric configurations by the electric tweezers. The electric tweezers are a recent invention developed by Prof. Fan’s group, which are based on the combined electrophoretic and dielectrophoretic forces to transport and align nanowires independently in low Reynolds number suspensions. The Au/Ni multi-segmented nanowires are rationally designed and fabricated by electrodeposition into nanoporous templates. By employing the ferromagnetic properties of the nickel segments in the nanowires, we precisely transported and assembled randomly disperse nanowires into multi-mer
nanowire devices with designed configuration and further assembled them as the rotors of nanomotors. The magnetic attraction between the Ni segments in the nanowires holds the joints of dimers, trimers and tetramers tightly. The rotary nanomotors made of multiple assembled nanowires with designed configuration are the first to the best of our knowledge. Our study of their rotation behaviors as functions of voltage and frequency shows that the rotational speed of the nanomotors linearly increases with the square of the applied AC voltages and depends on the AC frequencies. The voltage square dependence is highly desirable for achieving ultrahigh speed rotation. This research could generate interest and impact multiple research fields including nanoelectromechanical system (NEMS) devices, nanomotors, microfluidic architectures and single-cell biology.
Advisors/Committee Members: Fan, Donglei (advisor), Li, Wei (committee member).
Subjects/Keywords: Nanomotor; Nanowire; Nanorotor; Nano-assembly; Nanowire multi-mers; Nanowire assembly; Rotary nanomotors
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Manager
APA (6th Edition):
Hong, Ki-Pyo, M. S. i. E. (2015). Rational fabrication, assembling and actuation of nanowire multi-mer nanomotors. (Masters Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/46976
Chicago Manual of Style (16th Edition):
Hong, Ki-Pyo, M S in Engineering. “Rational fabrication, assembling and actuation of nanowire multi-mer nanomotors.” 2015. Masters Thesis, University of Texas – Austin. Accessed March 01, 2021.
http://hdl.handle.net/2152/46976.
MLA Handbook (7th Edition):
Hong, Ki-Pyo, M S in Engineering. “Rational fabrication, assembling and actuation of nanowire multi-mer nanomotors.” 2015. Web. 01 Mar 2021.
Vancouver:
Hong, Ki-Pyo MSiE. Rational fabrication, assembling and actuation of nanowire multi-mer nanomotors. [Internet] [Masters thesis]. University of Texas – Austin; 2015. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/2152/46976.
Council of Science Editors:
Hong, Ki-Pyo MSiE. Rational fabrication, assembling and actuation of nanowire multi-mer nanomotors. [Masters Thesis]. University of Texas – Austin; 2015. Available from: http://hdl.handle.net/2152/46976
University of Cincinnati
9.
Kaveh Baghbadorani, Masoud.
Emission and Dynamics of Charge Carriers in Uncoated and
Organic/Metal Coated Semiconductor Nanowires.
Degree: PhD, Arts and Sciences: Physics, 2016, University of Cincinnati
URL: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1470754655
► In this dissertation, the dynamics of excitons in hybrid metal/organic/nanowire structures possessing nanometer thick deposited molecular and metal films on top of InP and GaAs…
(more)
▼ In this dissertation, the dynamics of excitons in
hybrid metal/organic/
nanowire structures possessing nanometer thick
deposited molecular and metal films on top of InP and GaAs
nanowire
(NW) surfaces were investigated. Optical characterizations were
carried out as a function of the semiconductor NW material, design,
NW size and the type and thickness of the organic material and
metal used. Hybrid organic and plasmonic semiconductor
nanowire
heterostructures were fabricated using organic molecular beam
deposition technique. I investigated the photon emission of
excitons in ~150 nm diameter polytype wurtzite/zincblende InP NWs
and the influence of a few ten nanometer thick organic and metal
films on the emission using intensity- and temperature-dependent
time-integrated and timeresolved (TR) photoluminescence (PL). The
plasmonic NWs were coated with an Aluminum quinoline (Alq3)
interlayer and magnesium–silver (Mg0.9:Ag0.1) top layer. In
addition, the nonlinear optical technique of heterodyne four-wave
mixing was used (in collaboration with Prof. Wolfgang Langbein,
University of Cardiff) to study incoherent and coherent carrier
relaxation processes on bare nanowires on a 100 femtosecond
time-scale. Alq3 covered NWs reveal a stronger emission and a
longer decay time of exciton transitions indicating surface state
passivation at the Alq3/NW interface. Alq3/Mg:Ag NWs reveal a
strong quenching of the exciton emission which is predominantly
attributed to Forster energy-transfer from excitons to plasmon
oscillations in the metal cluster film. Changing the Mg:Ag to gold
and the organic Alq3 spacer layer to PTCDA leads to a similar
behavior, but the PL quenching is strongly increased. The observed
behavior is attributed to a more continuous gold deposition leading
to an increased Forster energy transfer and to a metal induced
band-bending. I also investigated ensembles of bare and gold/Alq3
coated GaAs-AlGaAs-GaAs coreshell NWs of 130 nm diameter. Plasmonic
NWs with Au coating reveal a significant reduction of the PL
intensity compared with the uncoated NWs. Organic-plasmonic NWs
with an additional Alq3 interlayer show a noticeably stronger PL
intensity which increases with rising Alq3 spacer thickness. Metal
induced band bending is mainly attributed to be responsible for the
PL quenching. TR PL measurements support our interpretation by
showing an increase in the exciton decay times as we increase the
spacer thickness. Au coated NWs also reveal a strong polarization
dependent absorption which is mainly due to the significant
dielectric mismatch between the nanowires and the adjacent vacuum
environment. Finally, the amplified spontaneous emission (ASE) and
possible plasmonic NW lasing from hybrid plasmonic core-shell GaAs
NW heterostructures was investigated. The plasmonic
heterostructures are composed of either bare NWs on an Au coated
glass substrate or Au coated NWs on a bare glass substrate.
Intensity-dependent PL on plasmonic NW samples reveals a
superlinear increase of the PL intensities which is attributed to
an ASE at a…
Advisors/Committee Members: Wagner, Hans Peter (Committee Chair).
Subjects/Keywords: Physics; InP Nanowire; GaAs Nanowire; Optical Characterization; Organic Plasmonic Heterostructures; HFWM; Plasmonic Nanowire Lasing
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APA (6th Edition):
Kaveh Baghbadorani, M. (2016). Emission and Dynamics of Charge Carriers in Uncoated and
Organic/Metal Coated Semiconductor Nanowires. (Doctoral Dissertation). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1470754655
Chicago Manual of Style (16th Edition):
Kaveh Baghbadorani, Masoud. “Emission and Dynamics of Charge Carriers in Uncoated and
Organic/Metal Coated Semiconductor Nanowires.” 2016. Doctoral Dissertation, University of Cincinnati. Accessed March 01, 2021.
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1470754655.
MLA Handbook (7th Edition):
Kaveh Baghbadorani, Masoud. “Emission and Dynamics of Charge Carriers in Uncoated and
Organic/Metal Coated Semiconductor Nanowires.” 2016. Web. 01 Mar 2021.
Vancouver:
Kaveh Baghbadorani M. Emission and Dynamics of Charge Carriers in Uncoated and
Organic/Metal Coated Semiconductor Nanowires. [Internet] [Doctoral dissertation]. University of Cincinnati; 2016. [cited 2021 Mar 01].
Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1470754655.
Council of Science Editors:
Kaveh Baghbadorani M. Emission and Dynamics of Charge Carriers in Uncoated and
Organic/Metal Coated Semiconductor Nanowires. [Doctoral Dissertation]. University of Cincinnati; 2016. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1470754655
NSYSU
10.
Wang, Ching-Wen.
Synthesis of Silver Nanowires by TiO2 Nanoparticles.
Degree: Master, Chemistry, 2008, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623108-164201
► ãSilver nanowires prepared by the the reduction of AgNO3 at low temperature with thermocatalystic biphase (anatase and brookite phases) TiO2 nanoparticles are described. Furthermore, the…
(more)
▼ ãSilver nanowires prepared by the the reduction of AgNO3 at low temperature with thermocatalystic biphase (anatase and brookite phases) TiO2 nanoparticles are described. Furthermore, the possible mechanism to grow silver nanowires without the help of the Ag seed and capping reagent is proposed.
ãFirstly, the amorphous TiO2 nanoparticles prepared by sol-gel method were spin-coated on the silicon wafer to form amorphous TiO2 matrix. Then an aqueous AgNO3 (1 µL 0.7 M) solution was dropped on the amorphous TiO2 matrix. Following the heat treatment at 200 °C for 8 h, the silver nanowires (length~10 µm, line width~100 nm) were grown on the silicon wafer. We found that amorphous phase of TiO2 was changed to the anatase and brookite phases during the thermal reduction of the aqueous solution of AgNO3.
ãSilver nanowires were characterized as f.c.c. structure by XRD. The TiO2 particles play an important role in providing electrons and holes for redox reaction and nucleation. With the controlling of the heating temperature and the amount of AgNO3, the silver nanowires were selectively grown in one dimension with large energetic surface. A combination of HR-TEM imaging and selected area electron diffraction reveals that the growing direction for the Ag wires is <011>.
Advisors/Committee Members: Lan-Chang Liang (chair), Chin-Hsing Chou (chair), Teng-Yuan Dong (committee member), Nein-Chen Chang (chair).
Subjects/Keywords: nanoparticle; TiO2; silver nanowire
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APA (6th Edition):
Wang, C. (2008). Synthesis of Silver Nanowires by TiO2 Nanoparticles. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623108-164201
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Wang, Ching-Wen. “Synthesis of Silver Nanowires by TiO2 Nanoparticles.” 2008. Thesis, NSYSU. Accessed March 01, 2021.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623108-164201.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Wang, Ching-Wen. “Synthesis of Silver Nanowires by TiO2 Nanoparticles.” 2008. Web. 01 Mar 2021.
Vancouver:
Wang C. Synthesis of Silver Nanowires by TiO2 Nanoparticles. [Internet] [Thesis]. NSYSU; 2008. [cited 2021 Mar 01].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623108-164201.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Wang C. Synthesis of Silver Nanowires by TiO2 Nanoparticles. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0623108-164201
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
University of California – Merced
11.
Hujdic, Justin.
Lead selenide nanowire solar cells via LPNE and its new found derivatives.
Degree: Chemistry and Chemical Biology, 2012, University of California – Merced
URL: http://www.escholarship.org/uc/item/9hw977qp
► Solar energy has yet to break into the mainstream market mainly due to its elevated cost relative to its competitors. I introduce the ability to…
(more)
▼ Solar energy has yet to break into the mainstream market mainly due to its elevated cost relative to its competitors. I introduce the ability to use lithographically patterned nanowire electrodeposition (LPNE), a cost-effective nanowire growth method developed by the Penner group in 2006, to fabricate PbSe nanowires as a base for solar cells. I then transition into demonstrating how LPNE can be amended to permit for high density nanowire fabrication on the order of 50 nm pitch, resulting in a significantly larger device density compared to traditional LPNE. Next, I will illustrate successful fabrication of solar cells based on PbSe and how high density LPNE has shown the potential ability to increase the efficiency of the device due to nanoscale phenomena. I conclude with two systematic routes for future improvement to the device which are already underway. Consequently there exists the potential that an improved solar cell based on these methods could compete as a cost-effective energy source.
Subjects/Keywords: Chemistry; nanowire; solar cells
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APA (6th Edition):
Hujdic, J. (2012). Lead selenide nanowire solar cells via LPNE and its new found derivatives. (Thesis). University of California – Merced. Retrieved from http://www.escholarship.org/uc/item/9hw977qp
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Hujdic, Justin. “Lead selenide nanowire solar cells via LPNE and its new found derivatives.” 2012. Thesis, University of California – Merced. Accessed March 01, 2021.
http://www.escholarship.org/uc/item/9hw977qp.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Hujdic, Justin. “Lead selenide nanowire solar cells via LPNE and its new found derivatives.” 2012. Web. 01 Mar 2021.
Vancouver:
Hujdic J. Lead selenide nanowire solar cells via LPNE and its new found derivatives. [Internet] [Thesis]. University of California – Merced; 2012. [cited 2021 Mar 01].
Available from: http://www.escholarship.org/uc/item/9hw977qp.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Hujdic J. Lead selenide nanowire solar cells via LPNE and its new found derivatives. [Thesis]. University of California – Merced; 2012. Available from: http://www.escholarship.org/uc/item/9hw977qp
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Rochester Institute of Technology
12.
Yao, Zhonghua.
Development of nanowire structures on 2d and 3d substrates for pool boiling heat transfer enhancement.
Degree: PhD, Microsystems Engineering, 2013, Rochester Institute of Technology
URL: https://scholarworks.rit.edu/theses/4
► Boiling is a common mechanism for liquid-vapor phase transition and is widely exploited in power generation, refrigeration and many other systems. The efficacy of boiling…
(more)
▼ Boiling is a common mechanism for liquid-vapor phase transition and is widely exploited in power generation, refrigeration and many other systems. The efficacy of boiling heat transfer is characterized by two parameters: (a) heat transfer coefficient (HTC) or the thermal conductance; (b) the critical heat flux (CHF). Increasing the CHF and the HTC has significant impacts on system-level energy efficiency, safety and cost. As the surface modification at nano-scale has proven to be an effective approach to improve pool boiling heat transfer, the enhancement due to combination of nanomaterials with micro-scale structures on boiling heat transfer is an area of current interest. In this study, metallic- and semiconductor- material based
nanowire structures were fabricated and studied for boiling enhancement. A new technique is developed to directly grow Cu
nanowire (CuNW) on Si substrate with electro-chemical deposition, and to produce height-controlled hydrophilic nanowired surfaces. Using a two-step electroless etching process, silicon
nanowire (SiNW) have been selectively fabricated on top, bottom, and sidewall surfaces of silicon microchannels. An array of the SiNW coated microchannels functioned as a heat sink and was investigated for its pool boiling performance with water. This microchannel heat sink yielded superior boiling performance compared to a sample substrate with only microchannels and a plain substrate with nanowires. The enhancement was associated with the area covered by SiNWs. The sidewalls with SiNWs greatly affected bubble dynamics, resulting in a significant performance enhancement. The maximum heat flux of the microchannel with SiNW on all surfaces was improved by 150% over the microchannel-only heat sink and by more than 400% over a plain silicon substrate. These results provide a viable solution to meet the demands for dissipating a high heat transfer rate in a compact space, with additional insight gained into the boiling mechanism for the microchannel heat sinks with nanostructures.
Advisors/Committee Members: Kandlikar, Satish.
Subjects/Keywords: Nanowire; Pool boiling; Si substrates
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Manager
APA (6th Edition):
Yao, Z. (2013). Development of nanowire structures on 2d and 3d substrates for pool boiling heat transfer enhancement. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/4
Chicago Manual of Style (16th Edition):
Yao, Zhonghua. “Development of nanowire structures on 2d and 3d substrates for pool boiling heat transfer enhancement.” 2013. Doctoral Dissertation, Rochester Institute of Technology. Accessed March 01, 2021.
https://scholarworks.rit.edu/theses/4.
MLA Handbook (7th Edition):
Yao, Zhonghua. “Development of nanowire structures on 2d and 3d substrates for pool boiling heat transfer enhancement.” 2013. Web. 01 Mar 2021.
Vancouver:
Yao Z. Development of nanowire structures on 2d and 3d substrates for pool boiling heat transfer enhancement. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2013. [cited 2021 Mar 01].
Available from: https://scholarworks.rit.edu/theses/4.
Council of Science Editors:
Yao Z. Development of nanowire structures on 2d and 3d substrates for pool boiling heat transfer enhancement. [Doctoral Dissertation]. Rochester Institute of Technology; 2013. Available from: https://scholarworks.rit.edu/theses/4
Penn State University
13.
Kim, Jaekyun.
Deterministic Assembly of Functional Nanodevices onto Silicon Circuits.
Degree: 2010, Penn State University
URL: https://submit-etda.libraries.psu.edu/catalog/10557
► Bottom-up integration of nanostructures offers a promising method to achieve material diversity for chemical and biological applications, often considered unattainable by conventional top-down fabrication. Thus,…
(more)
▼ Bottom-up integration of nanostructures offers a promising method to achieve material diversity for chemical and biological applications, often considered unattainable by conventional top-down fabrication. Thus, deterministic integration of nanostructures such as nanowires and nanoshell spheres on silicon CMOS circuitry represents a significant step toward cross-reactive silicon CMOS chip where different types of off-chip synthesized sensory materials are merged. Applying this deterministic bottom-up integration to substrate or circuit eliminates the constraints of thermal budget, chemical compatibility, lattice mismatch between nanostructures to be assembled and substrate. This thesis discusses a deterministic assembly strategy for nanowires and spheres and their integrations onto silicon CMOS circuitry for electronic microsystem applications.
The
nanowire assembly structure was designed to create a dielectrophoretic attractive force toward the electrode gap, resulting in uniformly-spaced rhodium
nanowire array due to mutual electrostatic interaction between assembled nanowires. Systematic investigation reagarding
nanowire array formation reveals that stronger long-range dielectrophoretic forces attract more nanowires at the electrode gap, forming less-spaced array while stronger electrostatic
nanowire interaction results in the larger spacing within the array. Thus, their interplay tends to determine the average spacing between the assembled nanowires.
Based on understanding the electrostatistic interaction between assembled nanowires, lithographically defined wells with a localized electric field determines the final alignment position of assembled rhodium nanowires on a substrate. Post-assembly process using electrodeposition and subsequent lift-off process completes monolithic integration of rhodium nanowires while preserving nanowires assembled only within the recessed region. Individual rhodium
nanowire assembly yields exceeding 95% were obtained at
nanowire densities >105 /cm2 with a submicron registration accuracy. PEDOT/ClO4
nanowire chemical sensors are also fabricated to demonstrate functional
nanowire integration for on-chip sensing.
This thesis also describes a bottom-up strategy for fabricating ultra-high-density cross-point sensor arrays (>107 elements/cm2) that uses fluidic assembly to position the functional nanoshell microspheres between lithographically-defined electrodes on-chip. Cross-point array structure is designed to accommodate single spherical particles at each cross-point and make them electrically connected to upper and lower access electrodes. As proof-of-concept, PEDOT nanoshell microspheres are assembled to fabricate chemical sensor devices for on-chip application. Individually addressing each PEDOT nanoshell sphere enables monitoring of an array of sphere for conductance change by chemical gas, solvent, humidity.
Due to upper and lower electrodes format and intrinsic form factor of spheres, it is advantageous to achieve high integration density compared to nanowires with a high…
Advisors/Committee Members: Theresa Stellwag Mayer, Dissertation Advisor/Co-Advisor, Theresa Stellwag Mayer, Committee Chair/Co-Chair, Thomas E Mallouk, Committee Member, Craig Grimes, Committee Member, Jerzy Ruzyllo, Committee Member.
Subjects/Keywords: Nanotechnology; Nanowire
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APA (6th Edition):
Kim, J. (2010). Deterministic Assembly of Functional Nanodevices onto Silicon Circuits. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/10557
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Kim, Jaekyun. “Deterministic Assembly of Functional Nanodevices onto Silicon Circuits.” 2010. Thesis, Penn State University. Accessed March 01, 2021.
https://submit-etda.libraries.psu.edu/catalog/10557.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Kim, Jaekyun. “Deterministic Assembly of Functional Nanodevices onto Silicon Circuits.” 2010. Web. 01 Mar 2021.
Vancouver:
Kim J. Deterministic Assembly of Functional Nanodevices onto Silicon Circuits. [Internet] [Thesis]. Penn State University; 2010. [cited 2021 Mar 01].
Available from: https://submit-etda.libraries.psu.edu/catalog/10557.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Kim J. Deterministic Assembly of Functional Nanodevices onto Silicon Circuits. [Thesis]. Penn State University; 2010. Available from: https://submit-etda.libraries.psu.edu/catalog/10557
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Penn State University
14.
Davison, Scott Michael.
Experimental and Numerical Analysis of Electrophoretic Control of Nanowires.
Degree: 2010, Penn State University
URL: https://submit-etda.libraries.psu.edu/catalog/10322
► The work in this dissertation seeks to understand the electrokinetic motion of non-spherical particles, such as nanowires, in microfluidic channels. The goals are to understand…
(more)
▼ The work in this dissertation seeks to understand the electrokinetic motion of non-spherical particles, such as nanowires, in microfluidic channels. The goals are to understand how non-spherical particles move in the channels and to determine if means exist for control of the motion, position, or orientation of the particles. The results could aid in the use of nanowires, or other non-spherical particles, in areas such as electronic device manufacturing or analysis of biological particles.
Analysis of
nanowire motion under electrokinetic forces was carried out using both experimental and numerical methods. From our initial experiments we determined the average velocities of populations of nanowires. The measured velocities were used to validate theoretical predictions of electrokinetic motion. Numerical studies were used to study the motion of individual nanowires, focusing on interactions with the channel walls. Nonsteady numerical studies and subsequent experiments demonstrated that an interaction with the channel walls caused the nanowires to oscillate in angle and position in the channel as they moved through the channel.
Control over the position or orientation of the particles was explored through active and passive means. A 90
circ corner was shown to be a passive aid in aligning the nanowires. As the nanowires traveled around the corner, the nonuniform electrical and flow fields caused the nanowires to align along the center of the channel. To actively control the position or orientation of non-spherical particles, induced-charge electroosmosis (ICEO) was explored. ICEO uses an AC electric field to induce motion around conducting features in the channels. Numerical studies showed a wide range of control possibilities, while preliminary experiments demonstrated ICEO flows were present in the channel.
This research is consistent with previous theoretical predictions of electrokinetic motion of non-spherical particles and explores passive and active methods for motion control. The geometry of the channels was shown to passively aid in alignment of the particles. ICEO is a promising method of active positioning of the particles.
Advisors/Committee Members: Dr Kendra Sharp, Dissertation Advisor/Co-Advisor, Kendra V Sharp, Committee Chair/Co-Chair, James Gordon Brasseur, Committee Member, Md Amanul Haque, Committee Member, Theresa Stellwag Mayer, Committee Member, Darrell Velegol, Committee Member.
Subjects/Keywords: nanowire; electrophoresis
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APA (6th Edition):
Davison, S. M. (2010). Experimental and Numerical Analysis of Electrophoretic Control of Nanowires. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/10322
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Davison, Scott Michael. “Experimental and Numerical Analysis of Electrophoretic Control of Nanowires.” 2010. Thesis, Penn State University. Accessed March 01, 2021.
https://submit-etda.libraries.psu.edu/catalog/10322.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Davison, Scott Michael. “Experimental and Numerical Analysis of Electrophoretic Control of Nanowires.” 2010. Web. 01 Mar 2021.
Vancouver:
Davison SM. Experimental and Numerical Analysis of Electrophoretic Control of Nanowires. [Internet] [Thesis]. Penn State University; 2010. [cited 2021 Mar 01].
Available from: https://submit-etda.libraries.psu.edu/catalog/10322.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Davison SM. Experimental and Numerical Analysis of Electrophoretic Control of Nanowires. [Thesis]. Penn State University; 2010. Available from: https://submit-etda.libraries.psu.edu/catalog/10322
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Penn State University
15.
Kuo, Meng-wei.
Bottom-up and top-down fabrication of nanowire-based electronic devices:
In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions.
Degree: 2013, Penn State University
URL: https://submit-etda.libraries.psu.edu/catalog/18353
► Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up…
(more)
▼ Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p+-i-n+
nanowire junctions for tunnel field-effect transistors (TFETs) applications.
In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal non-uniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from
nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMB-doped Si nanowires grown using SiCl4 at high substrate temperatures.
In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperature-dependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly higher leakage current and a current kink in the reverse bias regime, which is likely due to additional trap states created by plasma-induced damage during the Cl2/Ar/H2 mesa isolation step. These states extend more than 60 nm from the mesa surface and can only be partially passivated after a thermal anneal at 350 °C for 20 minutes. The evolution of the electrical properties with post-dry etch treatments indicates that the shallow and deep-level trap states resulting from ion-induced point defects, arsenic vacancies and hydrogen-dopant complexes are the primary cause of degradation in the electrical properties of the dry-etched junctions.
Advisors/Committee Members: Theresa Stellwag Mayer, Dissertation Advisor/Co-Advisor, Theresa Stellwag Mayer, Committee Chair/Co-Chair, Joan Marie Redwing, Committee Member, Suman Datta, Committee Member, Nitin Samarth, Committee Member.
Subjects/Keywords: nanowire; VLS; InGaAs; tunnel
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APA (6th Edition):
Kuo, M. (2013). Bottom-up and top-down fabrication of nanowire-based electronic devices:
In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/18353
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Kuo, Meng-wei. “Bottom-up and top-down fabrication of nanowire-based electronic devices:
In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions.” 2013. Thesis, Penn State University. Accessed March 01, 2021.
https://submit-etda.libraries.psu.edu/catalog/18353.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Kuo, Meng-wei. “Bottom-up and top-down fabrication of nanowire-based electronic devices:
In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions.” 2013. Web. 01 Mar 2021.
Vancouver:
Kuo M. Bottom-up and top-down fabrication of nanowire-based electronic devices:
In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions. [Internet] [Thesis]. Penn State University; 2013. [cited 2021 Mar 01].
Available from: https://submit-etda.libraries.psu.edu/catalog/18353.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Kuo M. Bottom-up and top-down fabrication of nanowire-based electronic devices:
In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions. [Thesis]. Penn State University; 2013. Available from: https://submit-etda.libraries.psu.edu/catalog/18353
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Penn State University
16.
Pan, Suxing.
A Novel Approach For Fabricating Nanochannel Templates For Si Nanowire Growth And Transistor Fabrication.
Degree: 2013, Penn State University
URL: https://submit-etda.libraries.psu.edu/catalog/18933
► For the past decades, silicon nanowire (SiNW) has been extensively studied due to their unique electric, optical, and mechanical properties and great compatibility with modern…
(more)
▼ For the past decades, silicon
nanowire (SiNW) has been extensively studied due to their unique electric, optical, and mechanical properties and great compatibility with modern integrated circuits industry. Researchers have successfully demonstrated its potential applications in many fields, such as high performance transistors, high resolution and sensitivity bio and chemical sensors and so on. Scientists even predicted it is most likely that SiNW transistor will become the final winner for the competition of future generation transistor architecture. Therefore, it is very obvious that SiNW has become the rising star for future nanoelectronics. Up to date, many efforts have been devoted to synthesizing SiNW. In general, there are two main categories in terms of SiNW growth methods, and post growth device fabrication and assembly: “grow-and-place” and “grow-in-place”. For “grow-and-place” approach, intensive post growth treatments are needed to fully realize SiNW device application, which leads to higher cost and lower throughput. For “grow-in-place” approach, the SiNW is grown on the substrate, where the final device will be fabricated, and there is no post growth treatments needed. This approach improves the throughput and cost of “grow-in-place” approach. However, it is still a great challenge for realizing mass production of SiNW based device due to the lack of well-controlled nanofabrication techniques with lower cost and higher throughput.
To resolve some of these above-mentioned issues, in this thesis, we have developed a novel approach for fabricating nanochannel templates for SiNW growth and further device applications. This method represents “grow-in-place” approach and takes full advantages of “grow-in-place” approaches. However, it has several improvements compared with “grow-in-place” approach in terms of the fabrication of nanochannel templates, and catalyst patterning and control. We have investigated two alternative sacrificial materials for nanochannel templates, which are further used for encapsulated SiNW growth. Those two alternative sacrificial materials are polymers of specified properties and amorphous silicon. Specifically, we have explored the NXR 3022 polymer, which is water soluble, and NXR 1025 polymer, which is general solvent soluble. In addition, we have investigated and optimized the patterning techniques of sacrificial polymer based on the throughput, patterning cost and polymer compatibility with subsequent process steps. Taking into account of all the factors, we have chosen new nanoimprinting lithography to pattern the polymers. Detailed procedures and issues encountered during the nanochannel fabrication process will be discussed. For inorganic amorphous silicon, we have successfully demonstrated its capability as the sacrificial material of nanochannel. The advantages of using amorphous silicon are as follows: process simplicity, great compatibility with further processes as well as its ease of dry removal for forming nanochannels.
Through this novel proposed approach, we have…
Advisors/Committee Members: Stephen Joseph Fonash, Dissertation Advisor/Co-Advisor, Stephen Joseph Fonash, Committee Chair/Co-Chair, Samia A Suliman, Committee Member, Sanjay B Joshi, Committee Member, Sulin Zhang, Committee Member, Judith Todd Copley, Committee Member, Wookjun Nam, Special Member.
Subjects/Keywords: Silicon Nanowire; Transistor; AMOSFET
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APA (6th Edition):
Pan, S. (2013). A Novel Approach For Fabricating Nanochannel Templates For Si Nanowire Growth And Transistor Fabrication. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/18933
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Pan, Suxing. “A Novel Approach For Fabricating Nanochannel Templates For Si Nanowire Growth And Transistor Fabrication.” 2013. Thesis, Penn State University. Accessed March 01, 2021.
https://submit-etda.libraries.psu.edu/catalog/18933.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Pan, Suxing. “A Novel Approach For Fabricating Nanochannel Templates For Si Nanowire Growth And Transistor Fabrication.” 2013. Web. 01 Mar 2021.
Vancouver:
Pan S. A Novel Approach For Fabricating Nanochannel Templates For Si Nanowire Growth And Transistor Fabrication. [Internet] [Thesis]. Penn State University; 2013. [cited 2021 Mar 01].
Available from: https://submit-etda.libraries.psu.edu/catalog/18933.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Pan S. A Novel Approach For Fabricating Nanochannel Templates For Si Nanowire Growth And Transistor Fabrication. [Thesis]. Penn State University; 2013. Available from: https://submit-etda.libraries.psu.edu/catalog/18933
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Addis Ababa University
17.
Kidist, Moges.
MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS
.
Degree: 2013, Addis Ababa University
URL: http://etd.aau.edu.et/dspace/handle/123456789/4501
► Modeling and simulation of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) is very essential in order to understand the device physics, electrostatics and other important…
(more)
▼ Modeling and simulation of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) is
very essential in order to understand the device physics, electrostatics and other important
phenomena occurring in this device. Therefore, in this thesis the modeling and simulation of
Silicon Nano Wire field Effect Transistors (SiNW FETs) is done. The modeling is done assuming
both ballistic transport and transport in the presence of scattering. The modeling of SiNW FETs
assuming ballistic transport is an extension of the Natori’s theory of ballistic MOSFETs. The
second part of the modeling, which is developed on the assumption of scattering transport, is
based on McKelvey’s flux method. When the scattering effects are assumed to be absent, the
scattering model reduces to the ballistic model. Therefore, the main novelty introduced in this
thesis is the extension of the previous models and the incorporation of these two models together.
After the derivation of the model, its benchmarking is also done. This is accomplished by
comparing the simulation results of the developed model, which is implemented using MATLAB
programming, with that of the experimental and numerical simulation results. Various important
parameters are extracted and used for comparison, the main ones being the On-state current (Ion),
the Off-state current (Ioff), the Subthreshold Slope (SS) and drain induced barrier lowering
(DIBL). The comparison shows that there is a good agreement between the simulation results of
the developed model and the experimental and numerical simulation results, which indicates the
validity of the model. Finally, the effect of scaling of the physical parameters on the device
performance is investigated. The main parameters chosen for this investigation are the diameter
of the Nano Wire (NW) and the gate oxide thickness. When a simulation is done by varying these
parameters, Ion and Ioff currents are found to be affected greatly.
Advisors/Committee Members: Dr. Adeyabeba Abera (advisor).
Subjects/Keywords: SILICON NANOWIRE;
TRANSISTORS;
FIELD EFFECT
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APA (6th Edition):
Kidist, M. (2013). MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS
. (Thesis). Addis Ababa University. Retrieved from http://etd.aau.edu.et/dspace/handle/123456789/4501
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Kidist, Moges. “MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS
.” 2013. Thesis, Addis Ababa University. Accessed March 01, 2021.
http://etd.aau.edu.et/dspace/handle/123456789/4501.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Kidist, Moges. “MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS
.” 2013. Web. 01 Mar 2021.
Vancouver:
Kidist M. MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS
. [Internet] [Thesis]. Addis Ababa University; 2013. [cited 2021 Mar 01].
Available from: http://etd.aau.edu.et/dspace/handle/123456789/4501.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Kidist M. MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS
. [Thesis]. Addis Ababa University; 2013. Available from: http://etd.aau.edu.et/dspace/handle/123456789/4501
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
University of Connecticut
18.
Liao, Kuo-ting.
Fabrication and Characterization of ZnO/CuO Core-Shell Nanowire Arrays.
Degree: MS, Materials Science and Engineering, 2011, University of Connecticut
URL: https://opencommons.uconn.edu/gs_theses/152
► Research into nanomaterials has become more and more popular because of their unique properties compared to bulk materials. Amongst various functional materials, zinc oxide…
(more)
▼ Research into nanomaterials has become more and more popular because of their unique properties compared to bulk materials. Amongst various functional materials, zinc oxide (ZnO), with a direct electron energy band gap of 3.34 eV at room temperature, is an important optoelectronic material with an intrinsically
n-type semiconducting property. However, to form a
p-type ZnO semiconductor is still a challenge. Copper oxide (CuO), compared to ZnO, has a much smaller band gap, 1.2 eV, and shows an intrinsically
p-type semiconducting property. It has been suggested that when CuO is alloyed with ZnO properly, a
p-n semiconductor heterojunction can be formed to be utilized in solar cell and gas sensor applications.
In this thesis, ZnO/CuO core-shell
nanowire arrays have been successfully fabricated by a simple three-step process. ZnO
nanowire arrays were first grown by the hydrothermal method using ZnO seeded substrates. Copper then was deposited on as-grown ZnO
nanowire arrays by a DC sputtering method. Thermal oxidation of copper nanofilm was utilized to enable the formation of ZnO/CuO core-shell
nanowire arrays. The Cu nanofilm thermal oxidation behavior on the three-dimensional (3D) ZnO
nanowire arrays was systematically studied by introducing different oxygen flows and different pressures. It has been suggested that increasing oxygen flow rate might increase local partial oxygen pressure, thereby increasing the degree of oxidation throughout each single ZnO/Cu core-shell
nanowire. Higher pressure might favor the formation of Zn
2SiO
4 at the interface of ZnO and silicon substrates. ZnO/CuO core-shell
nanowire arrays have exhibited better absorption efficiency in visible region as compared to the pure ZnO
nanowire arrays, which suggests that ZnO/CuO core-shell
nanowire arrays have strong potential as nanoscale building blocks in solar cells and light emission devices.
In this thesis layout, the first chapter gives general concepts and background on ZnO and CuO nanowires. Chapters 2 and 3 will provide the experimental methodologies and some important parameters to control. Chapter 4 focuses on the results and discussion on the characterization, growth mechanism, and Cu nanofilm oxidation behavior on 3D ZnO
nanowire arrays. Chapter 5 concludes this thesis work and provides suggestions for the future work.
Advisors/Committee Members: S. Pamir Alpay, Mei Wei, Puxian Gao.
Subjects/Keywords: core shell nanowire arrays
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APA (6th Edition):
Liao, K. (2011). Fabrication and Characterization of ZnO/CuO Core-Shell Nanowire Arrays. (Masters Thesis). University of Connecticut. Retrieved from https://opencommons.uconn.edu/gs_theses/152
Chicago Manual of Style (16th Edition):
Liao, Kuo-ting. “Fabrication and Characterization of ZnO/CuO Core-Shell Nanowire Arrays.” 2011. Masters Thesis, University of Connecticut. Accessed March 01, 2021.
https://opencommons.uconn.edu/gs_theses/152.
MLA Handbook (7th Edition):
Liao, Kuo-ting. “Fabrication and Characterization of ZnO/CuO Core-Shell Nanowire Arrays.” 2011. Web. 01 Mar 2021.
Vancouver:
Liao K. Fabrication and Characterization of ZnO/CuO Core-Shell Nanowire Arrays. [Internet] [Masters thesis]. University of Connecticut; 2011. [cited 2021 Mar 01].
Available from: https://opencommons.uconn.edu/gs_theses/152.
Council of Science Editors:
Liao K. Fabrication and Characterization of ZnO/CuO Core-Shell Nanowire Arrays. [Masters Thesis]. University of Connecticut; 2011. Available from: https://opencommons.uconn.edu/gs_theses/152
University of Toronto
19.
Gutstein, David.
Quantum Transport Studies of InAs Based Nanowire Devices.
Degree: 2017, University of Toronto
URL: http://hdl.handle.net/1807/97131
► Experiments and analysis reported in this thesis advance the understanding of quantum transport in nanowire transistors. Indium Arsenide nanowires grown by molecular beam epitaxy were…
(more)
▼ Experiments and analysis reported in this thesis advance the understanding of quantum transport in nanowire transistors. Indium Arsenide nanowires grown by molecular beam epitaxy were incorporated into numerous back-gated field effect transistors and electronic measurements confirm electron transport is occurring in a regime where ballistic transmission and quantum confinement effects are significant. Quantum interference phenomena are investigated through electrostatic manipulation of interface charge configurations and interference quenching is demonstrated in a nanowire device. Elimination of interference distortions reveal perfect quantization of the conductance and provide direct insight into the one-dimensional quantum-electronic bandstructure which displays strong divergence from cylindrical hard-wall confinement. Numerical simulations investigating morphological variations demonstrate a strong influence on electronic sub-band structure, prompting characterization of the cross-sectional morphology via focused ion beam micro-sampling and transmission electron microscopy. Adoption of hard-wall confinement potentials consistent with the characterized morphology indicates significant electrostatic influence of interface charges on the sub-band structure.
M.A.S.
2019-11-03 00:00:00
Advisors/Committee Members: Ruda, Harry E, Electrical and Computer Engineering.
Subjects/Keywords: Ballistic; InAs; Nanowire; Quantum; 0544
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APA (6th Edition):
Gutstein, D. (2017). Quantum Transport Studies of InAs Based Nanowire Devices. (Masters Thesis). University of Toronto. Retrieved from http://hdl.handle.net/1807/97131
Chicago Manual of Style (16th Edition):
Gutstein, David. “Quantum Transport Studies of InAs Based Nanowire Devices.” 2017. Masters Thesis, University of Toronto. Accessed March 01, 2021.
http://hdl.handle.net/1807/97131.
MLA Handbook (7th Edition):
Gutstein, David. “Quantum Transport Studies of InAs Based Nanowire Devices.” 2017. Web. 01 Mar 2021.
Vancouver:
Gutstein D. Quantum Transport Studies of InAs Based Nanowire Devices. [Internet] [Masters thesis]. University of Toronto; 2017. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/1807/97131.
Council of Science Editors:
Gutstein D. Quantum Transport Studies of InAs Based Nanowire Devices. [Masters Thesis]. University of Toronto; 2017. Available from: http://hdl.handle.net/1807/97131
Université Catholique de Louvain
20.
Staelens, Guillaume.
Manufacture and characterization of self-assemblies of functionalized nanowires.
Degree: 2019, Université Catholique de Louvain
URL: http://hdl.handle.net/2078.1/216764
► In nature, many organisms have the ability to adapt and change their structural configuration at the nanoscopic level, providing them an exquisite variety of properties…
(more)
▼ In nature, many organisms have the ability to adapt and change their structural configuration at the nanoscopic level, providing them an exquisite variety of properties and dynamic interactions with their environment. Mimicking such complex systems would open the path towards such properties and interactions. However the investigation of such systems requires first to understand and control the self-assembly of nanostructured systems and next to understand and control the reconfiguration mechanisms. This thesis aims at addressing the first part of this objective. Based on a "bottom-up" approach, the objectives of this work are the design, the manufacture and the characterization of self-assemblies of (multi)functionalized nano-building blocks. These self-assemblies should be thin films presenting an ordered structure at a scale close to the one of the building blocks ("supra-crystalline") dependent on the system conditions, such as the pH or the temperature. The nano-building blocks chosen here are functionalized nanowires (NWs) made of noble metals (Pt, Au or Pd). They were synthesized by electro-chemical deposition in nanoporous membranes. This templating method simultaneously allowed to chemically modify specific parts of the NW surface, especially their bases. The chemical functionalization was achieved using either thiol assembly or polyelectrolyte adsorption. Homogeneously functionalized as well as homogeneously multi-functionalized NWs were obtained. The NWs were then assembled using two different methods: drop-casting on functionalized substrates and assembly at the toluene-water interface. For the latter method, different techniques (fishing, drain-to-deposit or PDMS stamp inking) were tested to recover the assemblies on appropriate substrates, allowing their characterization by SEM or AFM. The influence of several parameters such as the nature of the nano-object, the functionalization of the nano-objects or substrate, the pH, etc. on the compactness (density) and organization of the assemblies was studied.
(FSA - Sciences de l'ingénieur) – UCL, 2019
Advisors/Committee Members: UCL - SST/IMCN/BSMA - Bio and soft matter, UCL - Ecole Polytechnique de Louvain, Jonas, Alain, Nysten, Bernard, Demoustier, Sophie, Leyssens, Tom, Duwez, Anne-Sophie, Bruylants, Gilles, Devaux, Jacques.
Subjects/Keywords: Nanowire; Self-assembly; Functionalization
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APA (6th Edition):
Staelens, G. (2019). Manufacture and characterization of self-assemblies of functionalized nanowires. (Thesis). Université Catholique de Louvain. Retrieved from http://hdl.handle.net/2078.1/216764
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Staelens, Guillaume. “Manufacture and characterization of self-assemblies of functionalized nanowires.” 2019. Thesis, Université Catholique de Louvain. Accessed March 01, 2021.
http://hdl.handle.net/2078.1/216764.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Staelens, Guillaume. “Manufacture and characterization of self-assemblies of functionalized nanowires.” 2019. Web. 01 Mar 2021.
Vancouver:
Staelens G. Manufacture and characterization of self-assemblies of functionalized nanowires. [Internet] [Thesis]. Université Catholique de Louvain; 2019. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/2078.1/216764.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Staelens G. Manufacture and characterization of self-assemblies of functionalized nanowires. [Thesis]. Université Catholique de Louvain; 2019. Available from: http://hdl.handle.net/2078.1/216764
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Colorado State University
21.
Purvis, Michael Anthony.
Relativistic plasma nano-photonics for ultra-high energy density physics.
Degree: PhD, Electrical and Computer Engineering, 2014, Colorado State University
URL: http://hdl.handle.net/10217/88457
► The trapping of femtosecond laser pulses of relativistic intensity deep within ordered nanowire arrays is shown to volumetrically heat near solid density matter transforming it…
(more)
▼ The trapping of femtosecond laser pulses of relativistic intensity deep within ordered
nanowire arrays is shown to volumetrically heat near solid density matter transforming it into ultra-hot highly ionized plasmas. The plasmas were generated by focusing intense ~ 60 femtosecond duration ultra-high-contrast laser pulses onto targets consisting of arrays of densely packed vertically aligned nanowires 35-80 nm diameter. X-ray spectra are presented showing that irradiation of Ni and Au
nanowire arrays heats a plasma volume several µm in depth to reach extraordinarily high degrees of ionization (i.e. 26 times ionized Ni , 52 times ionized Au), in the process generating gigabar level pressures. Electron densities nearly 100 times greater than the typical critical density and multi-keV temperatures are achieved using laser pulses of only 0.5 J energy. The large plasma volume and high electron density lead to an increased hydrodynamic-to-radiative lifetime ratio that results in a significant increase in X-ray yield. Measurements from a filtered photodiode array reveal a 100X increase in emission with respect to polished flat targets for photons with energies greater than 9keV. Scaling to higher laser intensities promises to create plasmas with temperatures and pressures approaching those in the center of the sun.
Advisors/Committee Members: Rocca, Jorge J. (advisor), Yalin, Azer P. (committee member), Menoni, Carmen S. (committee member), Marconi, Mario C. (committee member).
Subjects/Keywords: nanowire; laser; plasma; femtosecond; keV
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APA (6th Edition):
Purvis, M. A. (2014). Relativistic plasma nano-photonics for ultra-high energy density physics. (Doctoral Dissertation). Colorado State University. Retrieved from http://hdl.handle.net/10217/88457
Chicago Manual of Style (16th Edition):
Purvis, Michael Anthony. “Relativistic plasma nano-photonics for ultra-high energy density physics.” 2014. Doctoral Dissertation, Colorado State University. Accessed March 01, 2021.
http://hdl.handle.net/10217/88457.
MLA Handbook (7th Edition):
Purvis, Michael Anthony. “Relativistic plasma nano-photonics for ultra-high energy density physics.” 2014. Web. 01 Mar 2021.
Vancouver:
Purvis MA. Relativistic plasma nano-photonics for ultra-high energy density physics. [Internet] [Doctoral dissertation]. Colorado State University; 2014. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/10217/88457.
Council of Science Editors:
Purvis MA. Relativistic plasma nano-photonics for ultra-high energy density physics. [Doctoral Dissertation]. Colorado State University; 2014. Available from: http://hdl.handle.net/10217/88457
22.
Chen, Jiezhi.
Investigations of Carrier Mobility Properties in Multiple Silicon Gate-All-Around Nanowire MOSFETs : マルチシリコンナノワイヤトランジスタにおけるキャリア移動度特性に関する研究.
Degree: 博士(工学), 2017, The University of Tokyo / 東京大学
URL: http://hdl.handle.net/2261/34245
Subjects/Keywords: nanowire; mobility
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APA (6th Edition):
Chen, J. (2017). Investigations of Carrier Mobility Properties in Multiple Silicon Gate-All-Around Nanowire MOSFETs : マルチシリコンナノワイヤトランジスタにおけるキャリア移動度特性に関する研究. (Thesis). The University of Tokyo / 東京大学. Retrieved from http://hdl.handle.net/2261/34245
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Chen, Jiezhi. “Investigations of Carrier Mobility Properties in Multiple Silicon Gate-All-Around Nanowire MOSFETs : マルチシリコンナノワイヤトランジスタにおけるキャリア移動度特性に関する研究.” 2017. Thesis, The University of Tokyo / 東京大学. Accessed March 01, 2021.
http://hdl.handle.net/2261/34245.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Chen, Jiezhi. “Investigations of Carrier Mobility Properties in Multiple Silicon Gate-All-Around Nanowire MOSFETs : マルチシリコンナノワイヤトランジスタにおけるキャリア移動度特性に関する研究.” 2017. Web. 01 Mar 2021.
Vancouver:
Chen J. Investigations of Carrier Mobility Properties in Multiple Silicon Gate-All-Around Nanowire MOSFETs : マルチシリコンナノワイヤトランジスタにおけるキャリア移動度特性に関する研究. [Internet] [Thesis]. The University of Tokyo / 東京大学; 2017. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/2261/34245.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Chen J. Investigations of Carrier Mobility Properties in Multiple Silicon Gate-All-Around Nanowire MOSFETs : マルチシリコンナノワイヤトランジスタにおけるキャリア移動度特性に関する研究. [Thesis]. The University of Tokyo / 東京大学; 2017. Available from: http://hdl.handle.net/2261/34245
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
University of Toronto
23.
Lau, Jacky Kai-Tak.
Study of a Semiconductor Nanowire under a Scanning Probe Tip Gate.
Degree: 2010, University of Toronto
URL: http://hdl.handle.net/1807/24597
► Nanowires are sensitive to external influences such as surface charges or external electric fields. An Atomic Force Microsope (AFM) is modified to perform back gating…
(more)
▼ Nanowires are sensitive to external influences such as surface charges or external electric fields. An Atomic Force Microsope (AFM) is modified to perform back gating and tip gating measurements in order to understand the interaction between an external field, and surface charge and nanowire conductance.
A 2D finite element method (FEM) model is developed to simulate the measured conductance. The model shows that surface states play a critical role in determining nanowire conductance. A 3D FEM model is developed to examine the influence of the AFM tip on the lateral resolution of the AFM tip in the electrostatic measurement. The radius of the AFM tip determines the lateral resolution of the tip. However, carrier concentration in the nanowire establishes a lower limit on the lateral resolution, for small tip radii. These results enable one to optimize Scanning Probe Microscopy experiments as well as inform sample preparation for nanowire characterization.
MAST
Advisors/Committee Members: Ruda, Harry E., Electrical and Computer Engineering.
Subjects/Keywords: Nanowire; Scanning Probe; 0544
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Manager
APA (6th Edition):
Lau, J. K. (2010). Study of a Semiconductor Nanowire under a Scanning Probe Tip Gate. (Masters Thesis). University of Toronto. Retrieved from http://hdl.handle.net/1807/24597
Chicago Manual of Style (16th Edition):
Lau, Jacky Kai-Tak. “Study of a Semiconductor Nanowire under a Scanning Probe Tip Gate.” 2010. Masters Thesis, University of Toronto. Accessed March 01, 2021.
http://hdl.handle.net/1807/24597.
MLA Handbook (7th Edition):
Lau, Jacky Kai-Tak. “Study of a Semiconductor Nanowire under a Scanning Probe Tip Gate.” 2010. Web. 01 Mar 2021.
Vancouver:
Lau JK. Study of a Semiconductor Nanowire under a Scanning Probe Tip Gate. [Internet] [Masters thesis]. University of Toronto; 2010. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/1807/24597.
Council of Science Editors:
Lau JK. Study of a Semiconductor Nanowire under a Scanning Probe Tip Gate. [Masters Thesis]. University of Toronto; 2010. Available from: http://hdl.handle.net/1807/24597
University College Cork
24.
Wahl, Amélie.
Fabrication, characterisation and electroanalysis at 1-dimensional nanostructures.
Degree: 2013, University College Cork
URL: http://hdl.handle.net/10468/1740
► Integrated nanowire electrodes that permit direct, sensitive and rapid electrochemical based detection of chemical and biological species are a powerful emerging class of sensor devices.…
(more)
▼ Integrated
nanowire electrodes that permit direct, sensitive and rapid electrochemical based detection of chemical and biological species are a powerful emerging class of sensor devices. As critical dimensions of the electrodes enter the nanoscale, radial analyte diffusion profiles to the electrode dominate with a corresponding enhancement in mass transport, steady-state sigmoidal voltammograms, low depletion of target molecules and faster analysis. To optimise these sensors it is necessary to fully understand the factors that influence performance limits including: electrode geometry, electrode dimensions, electrode separation distances (within
nanowire arrays) and diffusional mass transport. Therefore, in this thesis, theoretical simulations of analyte diffusion occurring at a variety of electrode designs were undertaken using Comsol Multiphysics®. Sensor devices were fabricated and corresponding experiments were performed to challenge simulation results. Two approaches for the fabrication and integration of metal
nanowire electrodes are presented: Template Electrodeposition and Electron-Beam Lithography. These approaches allow for the fabrication of nanowires which may be subsequently integrated at silicon chip substrates to form fully functional electrochemical devices. Simulated and experimental results were found to be in excellent agreement validating the simulation model. The electrochemical characteristics exhibited by
nanowire electrodes fabricated by electronbeam lithography were directly compared against electrochemical performance of a commercial ultra-microdisc electrode. Steady-state cyclic voltammograms in ferrocenemonocarboxylic acid at single ultra-microdisc electrodes were observed at low to medium scan rates (≤ 500 mV.s-1). At nanowires, steady-state responses were observed at ultra-high scan rates (up to 50,000 mV.s-1), thus allowing for much faster analysis (20 ms). Approaches for elucidating faradaic signal without the requirement for background subtraction were also developed. Furthermore, diffusional process occurring at arrays with increasing inter-electrode distance and increasing number of nanowires were explored. Diffusion profiles existing at
nanowire arrays were simulated with Comsol Multiphysics®. A range of scan rates were modelled, and experiments were undertaken at 5,000 mV.s-1 since this allows rapid data capture required for, e.g., biomedical, environmental and pharmaceutical diagnostic applications.
Advisors/Committee Members: O'Riordan, Alan.
Subjects/Keywords: Nanotechnology; Nanowire electrodes; Electrochemistry; Electroanalysis
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APA (6th Edition):
Wahl, A. (2013). Fabrication, characterisation and electroanalysis at 1-dimensional nanostructures. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/1740
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Wahl, Amélie. “Fabrication, characterisation and electroanalysis at 1-dimensional nanostructures.” 2013. Thesis, University College Cork. Accessed March 01, 2021.
http://hdl.handle.net/10468/1740.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Wahl, Amélie. “Fabrication, characterisation and electroanalysis at 1-dimensional nanostructures.” 2013. Web. 01 Mar 2021.
Vancouver:
Wahl A. Fabrication, characterisation and electroanalysis at 1-dimensional nanostructures. [Internet] [Thesis]. University College Cork; 2013. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/10468/1740.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Wahl A. Fabrication, characterisation and electroanalysis at 1-dimensional nanostructures. [Thesis]. University College Cork; 2013. Available from: http://hdl.handle.net/10468/1740
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
University College Cork
25.
Kelly, Róisín A.
Modifying germanium nanowires for future devices: an in situ TEM study.
Degree: 2016, University College Cork
URL: http://hdl.handle.net/10468/2752
► Germanium was of great interest in the 1950’s when it was used for the first transistor device. However, due to the water soluble and unstable…
(more)
▼ Germanium was of great interest in the 1950’s when it was used for the first transistor device. However, due to the water soluble and unstable oxide it was surpassed by silicon. Today, as device dimensions are shrinking the silicon oxide is no longer suitable due to gate leakage and other low-κ dielectrics such as Al2O3 and HfO2 are being used. Germanium (Ge) is a promising material to replace or integrate with silicon (Si) to continue the trend of Moore’s law. Germanium has better intrinsic mobilities than silicon and is also silicon fab compatible so it would be an ideal material choice to integrate into silicon-based technologies. The progression towards nanoelectronics requires a lot of in depth studies. Dynamic TEM studies allow observations of reactions to allow a better understanding of mechanisms and how an external stimulus may affect a material/structure. This thesis details in situ TEM experiments to investigate some essential processes for germanium
nanowire (NW) integration into nanoelectronic devices; i.e. doping and Ohmic contact formation. Chapter 1 reviews recent advances in dynamic TEM studies on semiconductor (namely silicon and germanium) nanostructures. The areas included are
nanowire/crystal growth, germanide/silicide formation, irradiation, electrical biasing, batteries and strain. Chapter 2 details the study of ion irradiation and the damage incurred in germanium nanowires. An experimental set-up is described to allow for concurrent observation in the TEM of a
nanowire following sequential ion implantation steps. Grown nanowires were deposited on a FIB labelled SiN membrane grid which facilitated HRTEM imaging and facile navigation to a specific
nanowire. Cross sections of irradiated nanowires were also performed to evaluate the damage across the
nanowire diameter. Experiments were conducted at 30 kV and 5 kV ion energies to study the effect of beam energy on nanowires of varied diameters. The results on nanowires were also compared to the damage profile in bulk germanium with both 30 kV and 5 kV ion beam energies. Chapter 3 extends the work from chapter 2 whereby nanowires are annealed post ion irradiation. In situ thermal annealing experiments were conducted to observe the recrystallization of the nanowires. A method to promote solid phase epitaxial growth is investigated by irradiating only small areas of a
nanowire to maintain a seed from which the epitaxial growth can initiate. It was also found that strain in the
nanowire greatly effects defect formation and random nucleation and growth. To obtain full recovery of the crystal structure of a
nanowire, a stable support which reduces strain in the
nanowire is essential as well as containing a seed from which solid phase epitaxial growth can initiate. Chapter 4 details the study of nickel germanide formation in germanium nanostructures. Rows of EBL (electron beam lithography) defined Ni-capped germanium nanopillars were extracted in FIB cross sections and annealed in situ to observe the germanide formation. Chapter 5 summarizes the key…
Advisors/Committee Members: Petkov, Nikolay, Holmes, Justin D., SFI.
Subjects/Keywords: Germanium; Nanowire; Irradiation; Recrystallisation; Germanide
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APA (6th Edition):
Kelly, R. A. (2016). Modifying germanium nanowires for future devices: an in situ TEM study. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/2752
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Kelly, Róisín A. “Modifying germanium nanowires for future devices: an in situ TEM study.” 2016. Thesis, University College Cork. Accessed March 01, 2021.
http://hdl.handle.net/10468/2752.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Kelly, Róisín A. “Modifying germanium nanowires for future devices: an in situ TEM study.” 2016. Web. 01 Mar 2021.
Vancouver:
Kelly RA. Modifying germanium nanowires for future devices: an in situ TEM study. [Internet] [Thesis]. University College Cork; 2016. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/10468/2752.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Kelly RA. Modifying germanium nanowires for future devices: an in situ TEM study. [Thesis]. University College Cork; 2016. Available from: http://hdl.handle.net/10468/2752
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
University of Florida
26.
Bauer, Matthew J.
Low Power Magnetic Field Sensors Utilizing Janus Magnetoelectric Nanowires Fabrication and Characterization.
Degree: PhD, Materials Science and Engineering, 2019, University of Florida
URL: https://ufdc.ufl.edu/UFE0054284
► In this dissertation ultra-low power magnetic field sensing and current sensing discrete circuits utilizing magnetoelectric nanowires were fabricated. These sensors have applications in automobiles as…
(more)
▼ In this dissertation ultra-low power magnetic field sensing and current sensing discrete circuits utilizing magnetoelectric nanowires were fabricated. These sensors have applications in automobiles as rotational speed sensors and in electrical systems as current sensors. While active sensing elements such as Hall sensors function well in both applications their power and current requirements can be costly. The current draw in rotational speed sensors requires sufficiently large guage wire to accommodate the current draw increasing material cost. In complex systems where numerous current sensors may be necessary, decreasing the power loss incurred through current measurement becomes important. To decrease these costs, low power magnetic field sensors with the potential for miniaturization are desired. Magnetoelectrics, materials which exhibit an electrical polarization in response to an applied magnetic field could offer a solution as the voltage generated by the applied magnetic field could be used to measure the magnetic field without a power source needed for the sensing element. Composite strain mediated magnetoelectrics were utilized as they generally generate larger voltages per unit length and applied field than their single-phase counterparts. These composite magnetoelectrics are comprised of magnetostrictive and piezoelectric materials which share an interface. A shape change induced on the magnetostrictive phase by an applied magnetic field results in a shape change and corresponding electrical polarization in the piezoelectric material which can then be used to measure the magnitude of applied magnetic field. Composite strain mediated magnetoelectric nanowires are used here as the strain transfer between the phases is not clamped by an underlying substrate allowing greater magnetoelectric coefficients/sensitivities to be realized. Another advantage is that the optimal calcining temperature for magnetoelectric performance can be used while maintaining CMOS compatibility as this high temperature processing step occurs off substrate prior to assembly of the nanowires into the final device. ( en )
Advisors/Committee Members: Andrew,Jennifer (committee chair), Phillpot,Simon R (committee member), Sigmund,Wolfgang Michael (committee member), Meisel,Mark W (committee member).
Subjects/Keywords: dielectrophoresis – magnetoelectric – nanofabrication – nanowire – sensor
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APA (6th Edition):
Bauer, M. J. (2019). Low Power Magnetic Field Sensors Utilizing Janus Magnetoelectric Nanowires Fabrication and Characterization. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0054284
Chicago Manual of Style (16th Edition):
Bauer, Matthew J. “Low Power Magnetic Field Sensors Utilizing Janus Magnetoelectric Nanowires Fabrication and Characterization.” 2019. Doctoral Dissertation, University of Florida. Accessed March 01, 2021.
https://ufdc.ufl.edu/UFE0054284.
MLA Handbook (7th Edition):
Bauer, Matthew J. “Low Power Magnetic Field Sensors Utilizing Janus Magnetoelectric Nanowires Fabrication and Characterization.” 2019. Web. 01 Mar 2021.
Vancouver:
Bauer MJ. Low Power Magnetic Field Sensors Utilizing Janus Magnetoelectric Nanowires Fabrication and Characterization. [Internet] [Doctoral dissertation]. University of Florida; 2019. [cited 2021 Mar 01].
Available from: https://ufdc.ufl.edu/UFE0054284.
Council of Science Editors:
Bauer MJ. Low Power Magnetic Field Sensors Utilizing Janus Magnetoelectric Nanowires Fabrication and Characterization. [Doctoral Dissertation]. University of Florida; 2019. Available from: https://ufdc.ufl.edu/UFE0054284
University of Illinois – Urbana-Champaign
27.
Murphy, Andrew.
Macroscopic quantum tunneling in superconducting nanowire devices.
Degree: PhD, Physics, 2017, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/99272
► Macroscopic quantum tunneling is a process by which a macroscopic object, rather than a single electron, tunnels between two macroscopically distinct quantum states. In this…
(more)
▼ Macroscopic quantum tunneling is a process by which a macroscopic object, rather than a single electron, tunnels between two macroscopically distinct quantum states. In this dissertation, we will present the study of macroscopic quantum tunneling of phase-slips in superconducting devices, including one-dimensional nanowires, quasi-two-dimensional superconducting strips and doubly connected superconducting devices composed of two nanowires connected in parallel. We observe macroscopic quantum tunneling in these devices by measuring switching current distributions. It is known that the standard deviation of switching current distributions can be measured on a single
nanowire to reveal temperatures at which macroscopic quantum tunneling is responsible for phase-slips. Therefore we begin by studying higher moments of the switching current distributions, namely the skewness S (a measure of the asymmetry of a distribution) and kurtosis K (a measure of its peakedness). We find that the skewness and kurtosis of the switching current distributions obtained via the Kurkijarvi process on devices composed of single nanowires do not depend on whether the switching events are initiated by quantum or thermal phase-slips. Skewness and kurtosis deviate considerably from the values associated with a Gaussian distribution (S=0 and K=3). If, in an experiment these higher moments approach Gaussian values they indicate the existence of noise. Next we study macroscopic quantum tunneling of phase-slips in quasi-two-dimensional superconducting strips, which are commercially available devices used as single-photon detectors. These devices are composed of (250 um) long, (120 nm) wide, meandering superconducting strips. Each time a photon with sufficient energy strikes the strip a voltage pulse is produced and counted. However, the accuracy of these detectors is limited by a rate of dark counts (false events). We find that at sufficiently low temperatures, the macroscopic quantum tunneling of a vortex through an edge barrier on the wire (which results in a phase-slip as the vortex crosses the wide wire) contributes a base-level dark count rate in these detectors which must be considered during operation at low enough temperatures. After studying tunneling in single one-dimensional nanowires and wide, quasi-two-dimensional strips, we move our focus to doubly connected superconducting samples composed of two nanowires connected in parallel. We characterize and model these devices, and show their applicability as nanometer-scale superconducting memory cells. We develop precise algorithms allowing us to write and read the information onto such memory cells. We also observe signatures of macroscopic quantum tunneling in these doubly connected devices by observing a saturation in the standard deviation of switching current distributions at low temperatures. We then discuss how macroscopic quantum tunneling of the memory state can lead to a dissipationless operation of the superconducting memory cell. In each of these devices, whether single…
Advisors/Committee Members: Bezryadin, Alexey (advisor), Eckstein, James N (Committee Chair), Vishveshwara, Smitha (committee member), Yang, Liang (committee member).
Subjects/Keywords: MQT
nanowire
superconducting
tunneling
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APA (6th Edition):
Murphy, A. (2017). Macroscopic quantum tunneling in superconducting nanowire devices. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/99272
Chicago Manual of Style (16th Edition):
Murphy, Andrew. “Macroscopic quantum tunneling in superconducting nanowire devices.” 2017. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed March 01, 2021.
http://hdl.handle.net/2142/99272.
MLA Handbook (7th Edition):
Murphy, Andrew. “Macroscopic quantum tunneling in superconducting nanowire devices.” 2017. Web. 01 Mar 2021.
Vancouver:
Murphy A. Macroscopic quantum tunneling in superconducting nanowire devices. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2017. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/2142/99272.
Council of Science Editors:
Murphy A. Macroscopic quantum tunneling in superconducting nanowire devices. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2017. Available from: http://hdl.handle.net/2142/99272
University of Illinois – Urbana-Champaign
28.
Jung, Kyooho.
Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2.
Degree: PhD, Electrical & Computer Engr, 2016, University of Illinois – Urbana-Champaign
URL: http://hdl.handle.net/2142/92891
► Nano materials such as nanowires and 2-dimensional (2-D) molybdenum disulfide (MoS2) have received tremendous attention over the past few decades. Numerous applications have been proposed…
(more)
▼ Nano materials such as nanowires and 2-dimensional (2-D) molybdenum disulfide (MoS2) have received tremendous attention over the past few decades. Numerous applications have been proposed such as
nanowire MOSFETs,
nanowire electrical generators,
nanowire biosensors,
nanowire single photon detectors, MoS2 transistors, and MoS2 photodetectors. Some of these devices outperform state-of-the-art commercial products, but none of these nano material based devices have been commercialized up to date. One of the biggest barriers for industries to use these nano materials is a lack of mass fabrications methods. For nanowires, obtaining a large area planar array of nanowires is extremely difficult and no known method can achieve a high-density large-area array of precisely positioned nanowires. Although there has been huge progress over the past few years, the yield and density of planar
nanowire arrays from the reported literature are far from required values for industrial use. For MoS2, obtaining a single-crystal phase with a wafer-scale uniform monolayer is needed in order for the material to be mass fabricated. Although wafer scale monolayer MoS2 has successfully been grown, it contained a high density of grain boundaries which would cause non-uniform performance when mass produced into nano-scale devices.
In this dissertation, general pathways for commercialization of
nanowire and MoS2 based devices will be explained as well as the backgrounds on the
nanowire/MoS2 field. Also, state-of the art methods for achieving planar
nanowire arrays and growing monolayer MoS2 will be discussed. In a later section, a new method will be proposed that shows the highest yield and density of planar nanowires ever reported. A growth method for obtaining large-scale single-crystal monolayer MoS2 will be proposed as well.
Advisors/Committee Members: Li, Xiuling (advisor), Li, Xiuling (Committee Chair), Lyding, Joseph W. (committee member), Zhu, Wenjuan (committee member), Nam, Sungwoo (committee member).
Subjects/Keywords: nanowire; Molybdenum disulfide (MoS2); array
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APA (6th Edition):
Jung, K. (2016). Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/92891
Chicago Manual of Style (16th Edition):
Jung, Kyooho. “Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2.” 2016. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed March 01, 2021.
http://hdl.handle.net/2142/92891.
MLA Handbook (7th Edition):
Jung, Kyooho. “Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2.” 2016. Web. 01 Mar 2021.
Vancouver:
Jung K. Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2016. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/2142/92891.
Council of Science Editors:
Jung K. Novel nanomanufacturing methods for bottom-up III-V nanowires and van der Waals epitaxy of monolayer MoS2. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/92891
University of New Mexico
29.
Erdman, Matthew.
Low Temperature Growth and Characterization of ZnO Nanostructures.
Degree: Electrical and Computer Engineering, 2015, University of New Mexico
URL: http://hdl.handle.net/1928/27924
► A large factor in the decision of using solar systems over readily available fossil fuels and other energy production methods is the upfront cost of…
(more)
▼ A large factor in the decision of using solar systems over readily available fossil fuels and other energy production methods is the upfront cost of solar systems. Therefore a potentially low cost energy harvesting device has been proposed in the form of a hybrid organic-inorganic thermoelectric solar cell. The proposed device uses two different inorganic materials as the top and bottom contacts, and an organic material between the two contacts as a light absorber. The two contacts proposed are Zinc Oxide (ZnO) nanowires and Bismuth Telluride (BiTe) nanowires, and the organic light absorber is a semiconductor porphyrin. To further develop and design this device, the two contact materials need to be characterized and further developed. This manuscript focuses on the growth and characterization of the ZnO nanowires as the top contact. Interestingly, during the development and characterization of the ZnO nanowires, another nanostructure was unexpectedly grown and was also characterized. The second structure was determined to be a two dimensional ZnO nanoplatelet. It was observed the two structures share the same crystal structure and both can be grown at atmospheric pressure in a low energy growth process. The characterization methods used to characterize the two ZnO structures were electron microscopy including Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), diffraction pattern analysis via TEM, Energy Dispersive X-Ray Spectroscopy (EDS) via TEM, X-Ray Diffraction Analysis (XRD), absorption spectral analysis, and I-V curves via Contact Atomic Force Microscopy (CAFM).
Advisors/Committee Members: Lavrova, Olga, Balakrishnan, Ganesh, Jiang, Ying-Bing.
Subjects/Keywords: ZnO; Nanostructure; Characterization; Nanowire; Nanoplatelet
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APA (6th Edition):
Erdman, M. (2015). Low Temperature Growth and Characterization of ZnO Nanostructures. (Masters Thesis). University of New Mexico. Retrieved from http://hdl.handle.net/1928/27924
Chicago Manual of Style (16th Edition):
Erdman, Matthew. “Low Temperature Growth and Characterization of ZnO Nanostructures.” 2015. Masters Thesis, University of New Mexico. Accessed March 01, 2021.
http://hdl.handle.net/1928/27924.
MLA Handbook (7th Edition):
Erdman, Matthew. “Low Temperature Growth and Characterization of ZnO Nanostructures.” 2015. Web. 01 Mar 2021.
Vancouver:
Erdman M. Low Temperature Growth and Characterization of ZnO Nanostructures. [Internet] [Masters thesis]. University of New Mexico; 2015. [cited 2021 Mar 01].
Available from: http://hdl.handle.net/1928/27924.
Council of Science Editors:
Erdman M. Low Temperature Growth and Characterization of ZnO Nanostructures. [Masters Thesis]. University of New Mexico; 2015. Available from: http://hdl.handle.net/1928/27924
University of Minnesota
30.
Huang, Xiaobo.
Constricted current perpendicular to plane (CPP) magnetic sensor via electroplating.
Degree: PhD, Electrical Engineering, 2011, University of Minnesota
URL: http://purl.umn.edu/101776
► Electrochemically deposited magnetic nanowires have gained increasing attention since current perpendicular to the plane giant magnetoresistance (CPP-GMR) was observed in multilayered nanowires. Magnetic nanowires have…
(more)
▼ Electrochemically deposited magnetic nanowires have gained increasing attention since current perpendicular to the plane giant magnetoresistance (CPP-GMR) was observed in multilayered nanowires. Magnetic nanowires have potential for fundamental studies, including measuring spin diffusion lengths and understanding the mechanisms of the electron spin transfer. They also have great potential technological applications as CPP-GMR sensors, magnetic random access memory (MRAM), and next generation magnetic recording heads. Small diameter nanowires are desired in order to have large current density per device and a high areal density for device arrays, for example, 2 Tb/in2 media. In this research, E-beam lithography, nano-imprinting, and self-assembled nanoporous alumina templates (AAO) were studied to achieve as small diameter nanopores as possible. AAO templates with 10 nm diameter were fabricated using both Al foils and Al thin films. Very small diameter (10 nm) CPP-GMR Co/Cu nanowires were fabricated into AAO templates using electrochemical deposition. The magnetic transport properties of these multilayered and trilayered Co/Cu nanowires were investigated. It was found that nanowire anisotropies parallel and perpendicular to the nanowires were dependent on the thicknesses of Co and Cu layers. GMR of 19% was achieved with 10 nm diameter nanowires at room temperature. The magnetic free layers were as thin as 4.5 nm with GMR of 18%. Spin transfer torque switching current densities were measured to be 106 - 108A/cm2. The measurement of spin transfer torque was conducted numerous times with high repeatability in the critical switching currents from parallel to antiparallel alignment (JP-AP) and slight variations in back (JAP-P). Small resistance area products (RA) of 0.003 ohmµm2 were achieved with trilayers that had 40ohm total resistance. All of results in this study show that nanowires with 10 nm diameters have potential application as next generation CCP-GMR sensors and spin transfer torque MRAM.
Subjects/Keywords: Magnetic; Nanowire; Sensor; Electrical Engineering
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APA (6th Edition):
Huang, X. (2011). Constricted current perpendicular to plane (CPP) magnetic sensor via electroplating. (Doctoral Dissertation). University of Minnesota. Retrieved from http://purl.umn.edu/101776
Chicago Manual of Style (16th Edition):
Huang, Xiaobo. “Constricted current perpendicular to plane (CPP) magnetic sensor via electroplating.” 2011. Doctoral Dissertation, University of Minnesota. Accessed March 01, 2021.
http://purl.umn.edu/101776.
MLA Handbook (7th Edition):
Huang, Xiaobo. “Constricted current perpendicular to plane (CPP) magnetic sensor via electroplating.” 2011. Web. 01 Mar 2021.
Vancouver:
Huang X. Constricted current perpendicular to plane (CPP) magnetic sensor via electroplating. [Internet] [Doctoral dissertation]. University of Minnesota; 2011. [cited 2021 Mar 01].
Available from: http://purl.umn.edu/101776.
Council of Science Editors:
Huang X. Constricted current perpendicular to plane (CPP) magnetic sensor via electroplating. [Doctoral Dissertation]. University of Minnesota; 2011. Available from: http://purl.umn.edu/101776
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Open Access Theses and Dissertations
