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You searched for subject:(NEGF). Showing records 1 – 30 of 35 total matches.

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University of Waterloo

1. Miloswzewski, Jacek. Simulations of semiconductor laser using non-equilibrium Green's functions method.

Degree: 2012, University of Waterloo

 A novel method of simulating edge-emitting semiconductor lasers in a non-equilibrium steady-state is developed. The simulation is based on a non-equilibrium Green's function (NEGF) method.… (more)

Subjects/Keywords: NEGF; laser

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Miloswzewski, J. (2012). Simulations of semiconductor laser using non-equilibrium Green's functions method. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/6611

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Miloswzewski, Jacek. “Simulations of semiconductor laser using non-equilibrium Green's functions method.” 2012. Thesis, University of Waterloo. Accessed October 21, 2019. http://hdl.handle.net/10012/6611.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Miloswzewski, Jacek. “Simulations of semiconductor laser using non-equilibrium Green's functions method.” 2012. Web. 21 Oct 2019.

Vancouver:

Miloswzewski J. Simulations of semiconductor laser using non-equilibrium Green's functions method. [Internet] [Thesis]. University of Waterloo; 2012. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10012/6611.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Miloswzewski J. Simulations of semiconductor laser using non-equilibrium Green's functions method. [Thesis]. University of Waterloo; 2012. Available from: http://hdl.handle.net/10012/6611

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Alberta

2. Ahmed, Sabbir. Transport Performance Projection of Emerging Nanoscale Devices.

Degree: PhD, Department of Electrical and Computer Engineering, 2014, University of Alberta

 Emerging devices, such as those based on carbon (in the form of graphene or nanotubes) or III-V compound semiconductors, are constructed on an atomic scale,… (more)

Subjects/Keywords: Transport; NEGF; Saturation; Scattering; Nanoscale

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APA (6th Edition):

Ahmed, S. (2014). Transport Performance Projection of Emerging Nanoscale Devices. (Doctoral Dissertation). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/3484zj22x

Chicago Manual of Style (16th Edition):

Ahmed, Sabbir. “Transport Performance Projection of Emerging Nanoscale Devices.” 2014. Doctoral Dissertation, University of Alberta. Accessed October 21, 2019. https://era.library.ualberta.ca/files/3484zj22x.

MLA Handbook (7th Edition):

Ahmed, Sabbir. “Transport Performance Projection of Emerging Nanoscale Devices.” 2014. Web. 21 Oct 2019.

Vancouver:

Ahmed S. Transport Performance Projection of Emerging Nanoscale Devices. [Internet] [Doctoral dissertation]. University of Alberta; 2014. [cited 2019 Oct 21]. Available from: https://era.library.ualberta.ca/files/3484zj22x.

Council of Science Editors:

Ahmed S. Transport Performance Projection of Emerging Nanoscale Devices. [Doctoral Dissertation]. University of Alberta; 2014. Available from: https://era.library.ualberta.ca/files/3484zj22x


University of Sydney

3. Abbas, Sherif Abdelkader Tawfik. First principles investigations of quantum transport for nano-electronic applications .

Degree: 2017, University of Sydney

 The ability to control the transport of electrons across nanometer-sized junctions made from molecules and nanostructures has revolutionalized the field of electronics by introducing new… (more)

Subjects/Keywords: physics; DFT; NEGF; nanostructure; graphene

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APA (6th Edition):

Abbas, S. A. T. (2017). First principles investigations of quantum transport for nano-electronic applications . (Thesis). University of Sydney. Retrieved from http://hdl.handle.net/2123/16537

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Abbas, Sherif Abdelkader Tawfik. “First principles investigations of quantum transport for nano-electronic applications .” 2017. Thesis, University of Sydney. Accessed October 21, 2019. http://hdl.handle.net/2123/16537.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Abbas, Sherif Abdelkader Tawfik. “First principles investigations of quantum transport for nano-electronic applications .” 2017. Web. 21 Oct 2019.

Vancouver:

Abbas SAT. First principles investigations of quantum transport for nano-electronic applications . [Internet] [Thesis]. University of Sydney; 2017. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/2123/16537.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Abbas SAT. First principles investigations of quantum transport for nano-electronic applications . [Thesis]. University of Sydney; 2017. Available from: http://hdl.handle.net/2123/16537

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Nier, Olivier. Development of TCAD modeling for low field electronics transport and strain engineering in advanced Fully Depleted Silicon On Insulator (FDSOI) CMOS transistors : Développement de la modélisation TCAD pour l'ingénierie de la contrainte dans les dispositifs CMOS avancés sur film minces.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes; Università degli studi (Udine, Italie)

La conception des dispositifs nanométriques CMOS apporte de nouveaux défis à la communauté TCAD. En effet, de nos jours, les améliorations des performances des transistors… (more)

Subjects/Keywords: TCAD; FDSOI; Contraintes; Monte Carlo; Kubo-Greenwood; NEGF; TCAD; FDSOI; Strain; Monte Carlo; Kubo-Greenwood; NEGF; 620

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APA (6th Edition):

Nier, O. (2015). Development of TCAD modeling for low field electronics transport and strain engineering in advanced Fully Depleted Silicon On Insulator (FDSOI) CMOS transistors : Développement de la modélisation TCAD pour l'ingénierie de la contrainte dans les dispositifs CMOS avancés sur film minces. (Doctoral Dissertation). Grenoble Alpes; Università degli studi (Udine, Italie). Retrieved from http://www.theses.fr/2015GREAT141

Chicago Manual of Style (16th Edition):

Nier, Olivier. “Development of TCAD modeling for low field electronics transport and strain engineering in advanced Fully Depleted Silicon On Insulator (FDSOI) CMOS transistors : Développement de la modélisation TCAD pour l'ingénierie de la contrainte dans les dispositifs CMOS avancés sur film minces.” 2015. Doctoral Dissertation, Grenoble Alpes; Università degli studi (Udine, Italie). Accessed October 21, 2019. http://www.theses.fr/2015GREAT141.

MLA Handbook (7th Edition):

Nier, Olivier. “Development of TCAD modeling for low field electronics transport and strain engineering in advanced Fully Depleted Silicon On Insulator (FDSOI) CMOS transistors : Développement de la modélisation TCAD pour l'ingénierie de la contrainte dans les dispositifs CMOS avancés sur film minces.” 2015. Web. 21 Oct 2019.

Vancouver:

Nier O. Development of TCAD modeling for low field electronics transport and strain engineering in advanced Fully Depleted Silicon On Insulator (FDSOI) CMOS transistors : Développement de la modélisation TCAD pour l'ingénierie de la contrainte dans les dispositifs CMOS avancés sur film minces. [Internet] [Doctoral dissertation]. Grenoble Alpes; Università degli studi (Udine, Italie); 2015. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2015GREAT141.

Council of Science Editors:

Nier O. Development of TCAD modeling for low field electronics transport and strain engineering in advanced Fully Depleted Silicon On Insulator (FDSOI) CMOS transistors : Développement de la modélisation TCAD pour l'ingénierie de la contrainte dans les dispositifs CMOS avancés sur film minces. [Doctoral Dissertation]. Grenoble Alpes; Università degli studi (Udine, Italie); 2015. Available from: http://www.theses.fr/2015GREAT141

5. Rodrigo Yoshikawa Oeiras. Estudo de primeiros princípios das propriedades eletrônicas de novos materiais derivados do grafeno : as nanofitas e nanofios.

Degree: 2012, Universidade Federal de São Carlos

Nesta tese, estudamos novos materiais derivados de grafeno, as nanofitas e os nanofios de carbono, com o uso de cálculos numéricos baseados na teoria do… (more)

Subjects/Keywords: Transporte eletrônico; Estrutura eletrônica; Nanofitas; Semicondutores - defeitos; Grafeno; DFT; NEGF; FISICA

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APA (6th Edition):

Oeiras, R. Y. (2012). Estudo de primeiros princípios das propriedades eletrônicas de novos materiais derivados do grafeno : as nanofitas e nanofios. (Thesis). Universidade Federal de São Carlos. Retrieved from http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=5583

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Oeiras, Rodrigo Yoshikawa. “Estudo de primeiros princípios das propriedades eletrônicas de novos materiais derivados do grafeno : as nanofitas e nanofios.” 2012. Thesis, Universidade Federal de São Carlos. Accessed October 21, 2019. http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=5583.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Oeiras, Rodrigo Yoshikawa. “Estudo de primeiros princípios das propriedades eletrônicas de novos materiais derivados do grafeno : as nanofitas e nanofios.” 2012. Web. 21 Oct 2019.

Vancouver:

Oeiras RY. Estudo de primeiros princípios das propriedades eletrônicas de novos materiais derivados do grafeno : as nanofitas e nanofios. [Internet] [Thesis]. Universidade Federal de São Carlos; 2012. [cited 2019 Oct 21]. Available from: http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=5583.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Oeiras RY. Estudo de primeiros princípios das propriedades eletrônicas de novos materiais derivados do grafeno : as nanofitas e nanofios. [Thesis]. Universidade Federal de São Carlos; 2012. Available from: http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=5583

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universitat de Valencia

6. Castelo Ares, José María. Simulation of electronic states in a nanowire field-effect transistor .

Degree: 2015, Universitat de Valencia

 De acuerdo con la ley empírica de Moore, el número de transistores en un circuito integrado se ve duplicado aproximadamente cada dos años. Una vez… (more)

Subjects/Keywords: Nanowire; NWFET; Transistor; NEGF; Entropy; Statistical operator; Coulomb blockade

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APA (6th Edition):

Castelo Ares, J. M. (2015). Simulation of electronic states in a nanowire field-effect transistor . (Doctoral Dissertation). Universitat de Valencia. Retrieved from http://hdl.handle.net/10550/50060

Chicago Manual of Style (16th Edition):

Castelo Ares, José María. “Simulation of electronic states in a nanowire field-effect transistor .” 2015. Doctoral Dissertation, Universitat de Valencia. Accessed October 21, 2019. http://hdl.handle.net/10550/50060.

MLA Handbook (7th Edition):

Castelo Ares, José María. “Simulation of electronic states in a nanowire field-effect transistor .” 2015. Web. 21 Oct 2019.

Vancouver:

Castelo Ares JM. Simulation of electronic states in a nanowire field-effect transistor . [Internet] [Doctoral dissertation]. Universitat de Valencia; 2015. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10550/50060.

Council of Science Editors:

Castelo Ares JM. Simulation of electronic states in a nanowire field-effect transistor . [Doctoral Dissertation]. Universitat de Valencia; 2015. Available from: http://hdl.handle.net/10550/50060


Vanderbilt University

7. Musho, Terence David. Quantum Simulation of Nanoscale Transport in Direct Energy Conversion Materials: From Thermal-Field Emitters to Thermoelectrics.

Degree: PhD, Interdisciplinary Materials Science, 2012, Vanderbilt University

 In the ongoing struggle to resolve our current energy crisis, many agencies and researchers have spearheaded the application of direct energy conversion materials, such as… (more)

Subjects/Keywords: nanostructure; thermoelectric; thermionic; direct energy conversion; NEGF; quantum; nanoscale

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APA (6th Edition):

Musho, T. D. (2012). Quantum Simulation of Nanoscale Transport in Direct Energy Conversion Materials: From Thermal-Field Emitters to Thermoelectrics. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-03262012-225805/ ;

Chicago Manual of Style (16th Edition):

Musho, Terence David. “Quantum Simulation of Nanoscale Transport in Direct Energy Conversion Materials: From Thermal-Field Emitters to Thermoelectrics.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed October 21, 2019. http://etd.library.vanderbilt.edu//available/etd-03262012-225805/ ;.

MLA Handbook (7th Edition):

Musho, Terence David. “Quantum Simulation of Nanoscale Transport in Direct Energy Conversion Materials: From Thermal-Field Emitters to Thermoelectrics.” 2012. Web. 21 Oct 2019.

Vancouver:

Musho TD. Quantum Simulation of Nanoscale Transport in Direct Energy Conversion Materials: From Thermal-Field Emitters to Thermoelectrics. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2019 Oct 21]. Available from: http://etd.library.vanderbilt.edu//available/etd-03262012-225805/ ;.

Council of Science Editors:

Musho TD. Quantum Simulation of Nanoscale Transport in Direct Energy Conversion Materials: From Thermal-Field Emitters to Thermoelectrics. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu//available/etd-03262012-225805/ ;


University of Illinois – Urbana-Champaign

8. Lu, Shang-Chun. AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework.

Degree: PhD, Electrical & Computer Engr, 2019, University of Illinois – Urbana-Champaign

 As logic devices are nearing their physical scaling limit, many new materials and novel device-operation concepts have been proposed lately. Among the most promising candidates,… (more)

Subjects/Keywords: 2D materials; tunnel FET; density functional theory; NEGF; nanowire FET

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APA (6th Edition):

Lu, S. (2019). AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/104850

Chicago Manual of Style (16th Edition):

Lu, Shang-Chun. “AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework.” 2019. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 21, 2019. http://hdl.handle.net/2142/104850.

MLA Handbook (7th Edition):

Lu, Shang-Chun. “AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework.” 2019. Web. 21 Oct 2019.

Vancouver:

Lu S. AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2019. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/2142/104850.

Council of Science Editors:

Lu S. AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2019. Available from: http://hdl.handle.net/2142/104850

9. PENG JIEBIN. RADIATIVE HEAT TRANSFER AND THERMAL MANAGEMENT IN NANO-SCALE.

Degree: 2017, National University of Singapore

Subjects/Keywords: radiative heat transfer; thermal management; NEGF

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APA (6th Edition):

JIEBIN, P. (2017). RADIATIVE HEAT TRANSFER AND THERMAL MANAGEMENT IN NANO-SCALE. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/137602

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

JIEBIN, PENG. “RADIATIVE HEAT TRANSFER AND THERMAL MANAGEMENT IN NANO-SCALE.” 2017. Thesis, National University of Singapore. Accessed October 21, 2019. http://scholarbank.nus.edu.sg/handle/10635/137602.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

JIEBIN, PENG. “RADIATIVE HEAT TRANSFER AND THERMAL MANAGEMENT IN NANO-SCALE.” 2017. Web. 21 Oct 2019.

Vancouver:

JIEBIN P. RADIATIVE HEAT TRANSFER AND THERMAL MANAGEMENT IN NANO-SCALE. [Internet] [Thesis]. National University of Singapore; 2017. [cited 2019 Oct 21]. Available from: http://scholarbank.nus.edu.sg/handle/10635/137602.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

JIEBIN P. RADIATIVE HEAT TRANSFER AND THERMAL MANAGEMENT IN NANO-SCALE. [Thesis]. National University of Singapore; 2017. Available from: http://scholarbank.nus.edu.sg/handle/10635/137602

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Texas – Austin

10. Chang, Jiwon, active 2013. Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices.

Degree: PhD, Electrical and Computer Engineering, 2013, University of Texas – Austin

 Atomically two-dimensional (2-D) graphene, as well as the hexagonal boron nitride dielectric have been and are continuing to be widely investigated for the next generation… (more)

Subjects/Keywords: Density functional theory; Quantum transport; NEGF; 2-D material; Topological insulator; Transition metal dichalcogenide

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APA (6th Edition):

Chang, Jiwon, a. 2. (2013). Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/21742

Chicago Manual of Style (16th Edition):

Chang, Jiwon, active 2013. “Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices.” 2013. Doctoral Dissertation, University of Texas – Austin. Accessed October 21, 2019. http://hdl.handle.net/2152/21742.

MLA Handbook (7th Edition):

Chang, Jiwon, active 2013. “Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices.” 2013. Web. 21 Oct 2019.

Vancouver:

Chang, Jiwon a2. Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2013. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/2152/21742.

Council of Science Editors:

Chang, Jiwon a2. Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices. [Doctoral Dissertation]. University of Texas – Austin; 2013. Available from: http://hdl.handle.net/2152/21742


Purdue University

11. Charles, James A. Efficient Inelastic Scattering in Atomistic Tight Binding.

Degree: MSECE, Electrical and Computer Engineering, 2016, Purdue University

  In this thesis, the coherent and incoherent transport simulation capabilities of the multipurpose nanodevice simulation tool NEMO5 are presented and applied on transport in… (more)

Subjects/Keywords: Applied sciences; Atomistic; Inelastic scattering; Negf; Tfet; Tight binding; Electrical and Computer Engineering; Nanoscience and Nanotechnology

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APA (6th Edition):

Charles, J. A. (2016). Efficient Inelastic Scattering in Atomistic Tight Binding. (Thesis). Purdue University. Retrieved from https://docs.lib.purdue.edu/open_access_theses/933

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Charles, James A. “Efficient Inelastic Scattering in Atomistic Tight Binding.” 2016. Thesis, Purdue University. Accessed October 21, 2019. https://docs.lib.purdue.edu/open_access_theses/933.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Charles, James A. “Efficient Inelastic Scattering in Atomistic Tight Binding.” 2016. Web. 21 Oct 2019.

Vancouver:

Charles JA. Efficient Inelastic Scattering in Atomistic Tight Binding. [Internet] [Thesis]. Purdue University; 2016. [cited 2019 Oct 21]. Available from: https://docs.lib.purdue.edu/open_access_theses/933.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Charles JA. Efficient Inelastic Scattering in Atomistic Tight Binding. [Thesis]. Purdue University; 2016. Available from: https://docs.lib.purdue.edu/open_access_theses/933

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

12. Castelo Ares, José María. Simulation of electronic states in a nanowire field-effect transistor.

Degree: 2018, TDX

 Nanowires are emerging as promising candidates to form the basis of field-effect transistors, among other devices. Nanowire-based field-effect transistors are foreseen to be industrially standardized… (more)

Subjects/Keywords: Nanowire; NWFET; Transistor; NEGF; Entropy; Statistical operator; Coulomb blockade; UNESCO::CIENCIAS TECNOLÓGICAS::Tecnología electrónica ::Dispositivos semiconductores

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APA (6th Edition):

Castelo Ares, J. M. (2018). Simulation of electronic states in a nanowire field-effect transistor. (Thesis). TDX. Retrieved from http://hdl.handle.net/10803/570442

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Castelo Ares, José María. “Simulation of electronic states in a nanowire field-effect transistor.” 2018. Thesis, TDX. Accessed October 21, 2019. http://hdl.handle.net/10803/570442.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Castelo Ares, José María. “Simulation of electronic states in a nanowire field-effect transistor.” 2018. Web. 21 Oct 2019.

Vancouver:

Castelo Ares JM. Simulation of electronic states in a nanowire field-effect transistor. [Internet] [Thesis]. TDX; 2018. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10803/570442.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Castelo Ares JM. Simulation of electronic states in a nanowire field-effect transistor. [Thesis]. TDX; 2018. Available from: http://hdl.handle.net/10803/570442

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

13. Lu, Yang. Modeling and Simulation of Nano-Scale Electronics Based on Novel Low Dimentional Materials.

Degree: PhD, Electrical and Computer Engineering, 2014, University of Florida

 Semiconductor technology has entered the nano-scale era, in which the featuring size of transistors is well below 100nm. Traditional Si-device has maintained the high speed… (more)

Subjects/Keywords: Anisotropy; Drains; Electric current; Electronics; Electrons; Grain boundaries; Graphene; Magnetism; Phonons; Simulations; graphene  – modeling  – mos2  – negf  – simulation  – topological-insulator

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APA (6th Edition):

Lu, Y. (2014). Modeling and Simulation of Nano-Scale Electronics Based on Novel Low Dimentional Materials. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0046651

Chicago Manual of Style (16th Edition):

Lu, Yang. “Modeling and Simulation of Nano-Scale Electronics Based on Novel Low Dimentional Materials.” 2014. Doctoral Dissertation, University of Florida. Accessed October 21, 2019. http://ufdc.ufl.edu/UFE0046651.

MLA Handbook (7th Edition):

Lu, Yang. “Modeling and Simulation of Nano-Scale Electronics Based on Novel Low Dimentional Materials.” 2014. Web. 21 Oct 2019.

Vancouver:

Lu Y. Modeling and Simulation of Nano-Scale Electronics Based on Novel Low Dimentional Materials. [Internet] [Doctoral dissertation]. University of Florida; 2014. [cited 2019 Oct 21]. Available from: http://ufdc.ufl.edu/UFE0046651.

Council of Science Editors:

Lu Y. Modeling and Simulation of Nano-Scale Electronics Based on Novel Low Dimentional Materials. [Doctoral Dissertation]. University of Florida; 2014. Available from: http://ufdc.ufl.edu/UFE0046651


Universitat Rovira i Virgili

14. Hosenfeld, Fabian. NEGF Based Analytical Modeling of Advanced MOSFETs.

Degree: Departament d'Enginyeria Electrònica, Elèctrica i Automàtica, 2017, Universitat Rovira i Virgili

 Source-to-drain (SD) tunneling decreases the device performance in MOSFETs falling below the 10 nm channel length. Modeling quantum mechanical effects including SD tunneling has gained… (more)

Subjects/Keywords: MOSFET d'ultraescala; modelatge analític; NEGF; MOSFET ultra-escalado; modelado analítico; ultra-scaled MOSFET; analytical modeling; Enginyeria i Arquitectura; 62; 621.3

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APA (6th Edition):

Hosenfeld, F. (2017). NEGF Based Analytical Modeling of Advanced MOSFETs. (Thesis). Universitat Rovira i Virgili. Retrieved from http://hdl.handle.net/10803/462901

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hosenfeld, Fabian. “NEGF Based Analytical Modeling of Advanced MOSFETs.” 2017. Thesis, Universitat Rovira i Virgili. Accessed October 21, 2019. http://hdl.handle.net/10803/462901.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hosenfeld, Fabian. “NEGF Based Analytical Modeling of Advanced MOSFETs.” 2017. Web. 21 Oct 2019.

Vancouver:

Hosenfeld F. NEGF Based Analytical Modeling of Advanced MOSFETs. [Internet] [Thesis]. Universitat Rovira i Virgili; 2017. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10803/462901.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hosenfeld F. NEGF Based Analytical Modeling of Advanced MOSFETs. [Thesis]. Universitat Rovira i Virgili; 2017. Available from: http://hdl.handle.net/10803/462901

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Melbourne

15. AL-DIRINI, FERAS MOHAMAD. Planar nanoelectronic devices and biosensors using two-dimensional nanomaterials.

Degree: 2015, University of Melbourne

 Graphene, a monolayer of carbon atoms and the first two-dimensional (2D) material to be isolated, has sparked great excitement and vast opportunities in the global… (more)

Subjects/Keywords: nanoelectronics; devices; graphene; diodes; SSD; RTD; silicene; MoS2; biosensors; nanopores; tuneable; 2D materials; nanomaterials; NEGF; nanotechnology

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APA (6th Edition):

AL-DIRINI, F. M. (2015). Planar nanoelectronic devices and biosensors using two-dimensional nanomaterials. (Doctoral Dissertation). University of Melbourne. Retrieved from http://hdl.handle.net/11343/57278

Chicago Manual of Style (16th Edition):

AL-DIRINI, FERAS MOHAMAD. “Planar nanoelectronic devices and biosensors using two-dimensional nanomaterials.” 2015. Doctoral Dissertation, University of Melbourne. Accessed October 21, 2019. http://hdl.handle.net/11343/57278.

MLA Handbook (7th Edition):

AL-DIRINI, FERAS MOHAMAD. “Planar nanoelectronic devices and biosensors using two-dimensional nanomaterials.” 2015. Web. 21 Oct 2019.

Vancouver:

AL-DIRINI FM. Planar nanoelectronic devices and biosensors using two-dimensional nanomaterials. [Internet] [Doctoral dissertation]. University of Melbourne; 2015. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/11343/57278.

Council of Science Editors:

AL-DIRINI FM. Planar nanoelectronic devices and biosensors using two-dimensional nanomaterials. [Doctoral Dissertation]. University of Melbourne; 2015. Available from: http://hdl.handle.net/11343/57278

16. SIU ZHUO BIN. Transport in nanostructures with spin orbit interaction.

Degree: 2010, National University of Singapore

Subjects/Keywords: Spintronics; Nanostructures; Spin Orbit Interaction; Transport; NEGF; Spin

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APA (6th Edition):

BIN, S. Z. (2010). Transport in nanostructures with spin orbit interaction. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/19058

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

BIN, SIU ZHUO. “Transport in nanostructures with spin orbit interaction.” 2010. Thesis, National University of Singapore. Accessed October 21, 2019. http://scholarbank.nus.edu.sg/handle/10635/19058.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

BIN, SIU ZHUO. “Transport in nanostructures with spin orbit interaction.” 2010. Web. 21 Oct 2019.

Vancouver:

BIN SZ. Transport in nanostructures with spin orbit interaction. [Internet] [Thesis]. National University of Singapore; 2010. [cited 2019 Oct 21]. Available from: http://scholarbank.nus.edu.sg/handle/10635/19058.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

BIN SZ. Transport in nanostructures with spin orbit interaction. [Thesis]. National University of Singapore; 2010. Available from: http://scholarbank.nus.edu.sg/handle/10635/19058

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

17. Kim,Dukjin. Parallel Simulation of Nickel Silicide Silicon and Nickel Silicide Gallium Arsenide Contact Resistance in a Wide Doping Range.

Degree: MS, Electrical and Computer Engineering, 2011, University of Florida

 Scaling of solid-state devices has been successful during the past 40 years. As device feature size reduced, the density of transistors in a single chip… (more)

Subjects/Keywords: Algorithms; Atoms; Conduction bands; Contact resistance; Doping; Experimental data; Potential energy; Silicides; Silicon; Simulations; contact  – negf  – parallel  – silicide  – silicon

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APA (6th Edition):

Kim,Dukjin. (2011). Parallel Simulation of Nickel Silicide Silicon and Nickel Silicide Gallium Arsenide Contact Resistance in a Wide Doping Range. (Masters Thesis). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0043426

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

Kim,Dukjin. “Parallel Simulation of Nickel Silicide Silicon and Nickel Silicide Gallium Arsenide Contact Resistance in a Wide Doping Range.” 2011. Masters Thesis, University of Florida. Accessed October 21, 2019. http://ufdc.ufl.edu/UFE0043426.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

Kim,Dukjin. “Parallel Simulation of Nickel Silicide Silicon and Nickel Silicide Gallium Arsenide Contact Resistance in a Wide Doping Range.” 2011. Web. 21 Oct 2019.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

Kim,Dukjin. Parallel Simulation of Nickel Silicide Silicon and Nickel Silicide Gallium Arsenide Contact Resistance in a Wide Doping Range. [Internet] [Masters thesis]. University of Florida; 2011. [cited 2019 Oct 21]. Available from: http://ufdc.ufl.edu/UFE0043426.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

Kim,Dukjin. Parallel Simulation of Nickel Silicide Silicon and Nickel Silicide Gallium Arsenide Contact Resistance in a Wide Doping Range. [Masters Thesis]. University of Florida; 2011. Available from: http://ufdc.ufl.edu/UFE0043426

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Waterloo

18. AlMutairi, AbdulAziz. PtSe2 and HfSe2: New Transition Metal Dischalcogenides for Switching Device Applications.

Degree: 2018, University of Waterloo

 Recently, silicon-based complementary metal-oxide-semiconductor (CMOS) technology has been struggling in keeping the continuous improvement predicted by Moore’s Law. Hence, significant efforts have been made to… (more)

Subjects/Keywords: Transition Metal Dischalcogenides; TMDs; PtSe2; HfSe2; Field-effect transistor; FET; 2D materials; Non-Equilibrium Green's Function; NEGF; Density functional theory; DFT

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APA (6th Edition):

AlMutairi, A. (2018). PtSe2 and HfSe2: New Transition Metal Dischalcogenides for Switching Device Applications. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/13539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

AlMutairi, AbdulAziz. “PtSe2 and HfSe2: New Transition Metal Dischalcogenides for Switching Device Applications.” 2018. Thesis, University of Waterloo. Accessed October 21, 2019. http://hdl.handle.net/10012/13539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

AlMutairi, AbdulAziz. “PtSe2 and HfSe2: New Transition Metal Dischalcogenides for Switching Device Applications.” 2018. Web. 21 Oct 2019.

Vancouver:

AlMutairi A. PtSe2 and HfSe2: New Transition Metal Dischalcogenides for Switching Device Applications. [Internet] [Thesis]. University of Waterloo; 2018. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10012/13539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

AlMutairi A. PtSe2 and HfSe2: New Transition Metal Dischalcogenides for Switching Device Applications. [Thesis]. University of Waterloo; 2018. Available from: http://hdl.handle.net/10012/13539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

19. Seol, Gyungseon. Device Simulation of Functionalized 2D Material.

Degree: PhD, Electrical and Computer Engineering, 2014, University of Florida

 This work presents simulation work on electrical properties of functionalized 2D materials and the devices that utilize them as channel. The proposal is divided into… (more)

Subjects/Keywords: Atoms; Binding energy; Charge density; Doping; Electric current; Electrons; Energy gaps; Graphene; Orbitals; Transistors; dft  – graphene  – molybdenum-disulfide  – negf  – transition-metal-dichalcogenides  – tungsten-diselenide

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APA (6th Edition):

Seol, G. (2014). Device Simulation of Functionalized 2D Material. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0047043

Chicago Manual of Style (16th Edition):

Seol, Gyungseon. “Device Simulation of Functionalized 2D Material.” 2014. Doctoral Dissertation, University of Florida. Accessed October 21, 2019. http://ufdc.ufl.edu/UFE0047043.

MLA Handbook (7th Edition):

Seol, Gyungseon. “Device Simulation of Functionalized 2D Material.” 2014. Web. 21 Oct 2019.

Vancouver:

Seol G. Device Simulation of Functionalized 2D Material. [Internet] [Doctoral dissertation]. University of Florida; 2014. [cited 2019 Oct 21]. Available from: http://ufdc.ufl.edu/UFE0047043.

Council of Science Editors:

Seol G. Device Simulation of Functionalized 2D Material. [Doctoral Dissertation]. University of Florida; 2014. Available from: http://ufdc.ufl.edu/UFE0047043

20. Seldenthuis, J.S. Electrical and mechanical effects in single-molecule junctions.

Degree: 2011, Casimir PhD Series

 In single-molecule junctions, the behavior of a device is determined by the properties of an individual molecule. In this thesis we develop several models to… (more)

Subjects/Keywords: single-molecule junction; NEGF; rate equations; three-terminal transport; vibrational excitations; molecularmotor

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APA (6th Edition):

Seldenthuis, J. S. (2011). Electrical and mechanical effects in single-molecule junctions. (Doctoral Dissertation). Casimir PhD Series. Retrieved from http://resolver.tudelft.nl/uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6 ; urn:NBN:nl:ui:24-uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6 ; urn:NBN:nl:ui:24-uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6 ; http://resolver.tudelft.nl/uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6

Chicago Manual of Style (16th Edition):

Seldenthuis, J S. “Electrical and mechanical effects in single-molecule junctions.” 2011. Doctoral Dissertation, Casimir PhD Series. Accessed October 21, 2019. http://resolver.tudelft.nl/uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6 ; urn:NBN:nl:ui:24-uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6 ; urn:NBN:nl:ui:24-uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6 ; http://resolver.tudelft.nl/uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6.

MLA Handbook (7th Edition):

Seldenthuis, J S. “Electrical and mechanical effects in single-molecule junctions.” 2011. Web. 21 Oct 2019.

Vancouver:

Seldenthuis JS. Electrical and mechanical effects in single-molecule junctions. [Internet] [Doctoral dissertation]. Casimir PhD Series; 2011. [cited 2019 Oct 21]. Available from: http://resolver.tudelft.nl/uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6 ; urn:NBN:nl:ui:24-uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6 ; urn:NBN:nl:ui:24-uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6 ; http://resolver.tudelft.nl/uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6.

Council of Science Editors:

Seldenthuis JS. Electrical and mechanical effects in single-molecule junctions. [Doctoral Dissertation]. Casimir PhD Series; 2011. Available from: http://resolver.tudelft.nl/uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6 ; urn:NBN:nl:ui:24-uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6 ; urn:NBN:nl:ui:24-uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6 ; http://resolver.tudelft.nl/uuid:846a550f-3ea9-42d5-9d6a-378f37b985a6

21. Verzijl, C.J.O. On Conductance and Interface Effects in Molecular Devices.

Degree: 2012, Casimir PhD Series

 In this dissertation we discuss ab initio studies of quantum transport through single-molecule devices, using a combination of techniques from quantum chemistry and many-body physics.… (more)

Subjects/Keywords: single-molecule devices; DFT; NEGF; image charges; interface effects; level alignment

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APA (6th Edition):

Verzijl, C. J. O. (2012). On Conductance and Interface Effects in Molecular Devices. (Doctoral Dissertation). Casimir PhD Series. Retrieved from http://resolver.tudelft.nl/uuid:5a6b8240-1033-4834-b947-09c54b0f891b ; urn:NBN:nl:ui:24-uuid:5a6b8240-1033-4834-b947-09c54b0f891b ; urn:NBN:nl:ui:24-uuid:5a6b8240-1033-4834-b947-09c54b0f891b ; http://resolver.tudelft.nl/uuid:5a6b8240-1033-4834-b947-09c54b0f891b

Chicago Manual of Style (16th Edition):

Verzijl, C J O. “On Conductance and Interface Effects in Molecular Devices.” 2012. Doctoral Dissertation, Casimir PhD Series. Accessed October 21, 2019. http://resolver.tudelft.nl/uuid:5a6b8240-1033-4834-b947-09c54b0f891b ; urn:NBN:nl:ui:24-uuid:5a6b8240-1033-4834-b947-09c54b0f891b ; urn:NBN:nl:ui:24-uuid:5a6b8240-1033-4834-b947-09c54b0f891b ; http://resolver.tudelft.nl/uuid:5a6b8240-1033-4834-b947-09c54b0f891b.

MLA Handbook (7th Edition):

Verzijl, C J O. “On Conductance and Interface Effects in Molecular Devices.” 2012. Web. 21 Oct 2019.

Vancouver:

Verzijl CJO. On Conductance and Interface Effects in Molecular Devices. [Internet] [Doctoral dissertation]. Casimir PhD Series; 2012. [cited 2019 Oct 21]. Available from: http://resolver.tudelft.nl/uuid:5a6b8240-1033-4834-b947-09c54b0f891b ; urn:NBN:nl:ui:24-uuid:5a6b8240-1033-4834-b947-09c54b0f891b ; urn:NBN:nl:ui:24-uuid:5a6b8240-1033-4834-b947-09c54b0f891b ; http://resolver.tudelft.nl/uuid:5a6b8240-1033-4834-b947-09c54b0f891b.

Council of Science Editors:

Verzijl CJO. On Conductance and Interface Effects in Molecular Devices. [Doctoral Dissertation]. Casimir PhD Series; 2012. Available from: http://resolver.tudelft.nl/uuid:5a6b8240-1033-4834-b947-09c54b0f891b ; urn:NBN:nl:ui:24-uuid:5a6b8240-1033-4834-b947-09c54b0f891b ; urn:NBN:nl:ui:24-uuid:5a6b8240-1033-4834-b947-09c54b0f891b ; http://resolver.tudelft.nl/uuid:5a6b8240-1033-4834-b947-09c54b0f891b

22. GAURAV GUPTA. CARRIER TRANSPORT IN DIRAC-BAND MATERIALS AND THEIR DEVICE PHYSICS.

Degree: 2015, National University of Singapore

Subjects/Keywords: NEGF; Topological Insulators; Quantum Transport; Group-IV Monolayer; Dirac-Band Materials; Devices

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APA (6th Edition):

GUPTA, G. (2015). CARRIER TRANSPORT IN DIRAC-BAND MATERIALS AND THEIR DEVICE PHYSICS. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/121922

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

GUPTA, GAURAV. “CARRIER TRANSPORT IN DIRAC-BAND MATERIALS AND THEIR DEVICE PHYSICS.” 2015. Thesis, National University of Singapore. Accessed October 21, 2019. http://scholarbank.nus.edu.sg/handle/10635/121922.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

GUPTA, GAURAV. “CARRIER TRANSPORT IN DIRAC-BAND MATERIALS AND THEIR DEVICE PHYSICS.” 2015. Web. 21 Oct 2019.

Vancouver:

GUPTA G. CARRIER TRANSPORT IN DIRAC-BAND MATERIALS AND THEIR DEVICE PHYSICS. [Internet] [Thesis]. National University of Singapore; 2015. [cited 2019 Oct 21]. Available from: http://scholarbank.nus.edu.sg/handle/10635/121922.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

GUPTA G. CARRIER TRANSPORT IN DIRAC-BAND MATERIALS AND THEIR DEVICE PHYSICS. [Thesis]. National University of Singapore; 2015. Available from: http://scholarbank.nus.edu.sg/handle/10635/121922

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

23. Estrada, Zachary. Electron-phonon interactions in double layer graphene superfluids.

Degree: MS, 1200, 2012, University of Illinois – Urbana-Champaign

 As the scaling of electronic devices continues to decrease, the search for a low- power replacement for complementary metal-oxide semiconductor (CMOS) logic becomes increasingly important.… (more)

Subjects/Keywords: Phonons; Bose-Einstein Condensation; non-equilibrium Green's function (NEGF)

…Illustration of a generic device being simulated under NEGF . 24 5.1 5.2 5.3 5.4 Lennard-Jones… …Carbon nanotube MOSFET Metal-oxide-semiconductor field-effect transistor NEGF Non… …popular and powerful methods available today. The non-equilibrium Green’s function (NEGF… …Figure 4.1 illustrates a high-level overview of a device as it is represented in a NEGF… …at each lattice site are used as the basis) is assumed for all NEGF functions. Figure… 

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APA (6th Edition):

Estrada, Z. (2012). Electron-phonon interactions in double layer graphene superfluids. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/34248

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Estrada, Zachary. “Electron-phonon interactions in double layer graphene superfluids.” 2012. Thesis, University of Illinois – Urbana-Champaign. Accessed October 21, 2019. http://hdl.handle.net/2142/34248.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Estrada, Zachary. “Electron-phonon interactions in double layer graphene superfluids.” 2012. Web. 21 Oct 2019.

Vancouver:

Estrada Z. Electron-phonon interactions in double layer graphene superfluids. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/2142/34248.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Estrada Z. Electron-phonon interactions in double layer graphene superfluids. [Thesis]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/34248

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

24. Dellabetta, Brian. Non-equilibrium Green's function study of transport in disordered double-layer graphene systems.

Degree: MS, 1200, 2012, University of Illinois – Urbana-Champaign

 The superfluid properties of disordered double-layer graphene systems are investigated using the non-equilibrium Green's function (NEGF) formalism. The complexity of such a structure makes it… (more)

Subjects/Keywords: Graphene; Bose-Einstein Condensation; non-equilibrium Green's function (NEGF)

NEGF) formalism and its ability to determine non-equilibrium transport dynamics of a… …system. In Chapter 6, I utilize NEGF to predict the observable behavior of the double-layer… …room temperature [38]. In the next chapter, I will explain the NEGF formalism which… …Figure 5.1 shows a generic system to be simulated with NEGF [39; 40]. The electron… …semiconductors. The electron density, n(r), is evaluated in the NEGF kernel (see Eq… 

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APA (6th Edition):

Dellabetta, B. (2012). Non-equilibrium Green's function study of transport in disordered double-layer graphene systems. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/29622

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dellabetta, Brian. “Non-equilibrium Green's function study of transport in disordered double-layer graphene systems.” 2012. Thesis, University of Illinois – Urbana-Champaign. Accessed October 21, 2019. http://hdl.handle.net/2142/29622.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dellabetta, Brian. “Non-equilibrium Green's function study of transport in disordered double-layer graphene systems.” 2012. Web. 21 Oct 2019.

Vancouver:

Dellabetta B. Non-equilibrium Green's function study of transport in disordered double-layer graphene systems. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/2142/29622.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dellabetta B. Non-equilibrium Green's function study of transport in disordered double-layer graphene systems. [Thesis]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/29622

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

25. Areshkin, Denis Alexeyevich. Self-Consistent Environment-Dependent Tight-Binding. Methodology and Applications.

Degree: PhD, Materials Science and Engineering, 2002, North Carolina State University

 In the last several years dramatic advances have been demonstrated in the area of quantum electronic transport. A large part of transport methodology is borrowed… (more)

Subjects/Keywords: nonequilibrium; NEGF; Green's functions; DFT; ab-initio; tight-binding; quantum transport

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APA (6th Edition):

Areshkin, D. A. (2002). Self-Consistent Environment-Dependent Tight-Binding. Methodology and Applications. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3023

Chicago Manual of Style (16th Edition):

Areshkin, Denis Alexeyevich. “Self-Consistent Environment-Dependent Tight-Binding. Methodology and Applications.” 2002. Doctoral Dissertation, North Carolina State University. Accessed October 21, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3023.

MLA Handbook (7th Edition):

Areshkin, Denis Alexeyevich. “Self-Consistent Environment-Dependent Tight-Binding. Methodology and Applications.” 2002. Web. 21 Oct 2019.

Vancouver:

Areshkin DA. Self-Consistent Environment-Dependent Tight-Binding. Methodology and Applications. [Internet] [Doctoral dissertation]. North Carolina State University; 2002. [cited 2019 Oct 21]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3023.

Council of Science Editors:

Areshkin DA. Self-Consistent Environment-Dependent Tight-Binding. Methodology and Applications. [Doctoral Dissertation]. North Carolina State University; 2002. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3023


University of Florida

26. Palma, Julio. Theoretical Investigations of Molecular Wires Electronic Spectra and Electron Transport.

Degree: PhD, Chemistry, 2009, University of Florida

 The results of theoretical and computational research are presented for two promising molecular wires, the Nanostar dendrimer, and a series of substituted azobenzene derivatives connected… (more)

Subjects/Keywords: Absorption spectra; Chromophores; Dendrimers; Electronic structure; Electronics; Electrons; Energy; Lead; Molecules; Simulations; azobenzene, dendrimer, dft, electronic, electronics, molecular, nanostar, negf, quantum, spectrum

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APA (6th Edition):

Palma, J. (2009). Theoretical Investigations of Molecular Wires Electronic Spectra and Electron Transport. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0024291

Chicago Manual of Style (16th Edition):

Palma, Julio. “Theoretical Investigations of Molecular Wires Electronic Spectra and Electron Transport.” 2009. Doctoral Dissertation, University of Florida. Accessed October 21, 2019. http://ufdc.ufl.edu/UFE0024291.

MLA Handbook (7th Edition):

Palma, Julio. “Theoretical Investigations of Molecular Wires Electronic Spectra and Electron Transport.” 2009. Web. 21 Oct 2019.

Vancouver:

Palma J. Theoretical Investigations of Molecular Wires Electronic Spectra and Electron Transport. [Internet] [Doctoral dissertation]. University of Florida; 2009. [cited 2019 Oct 21]. Available from: http://ufdc.ufl.edu/UFE0024291.

Council of Science Editors:

Palma J. Theoretical Investigations of Molecular Wires Electronic Spectra and Electron Transport. [Doctoral Dissertation]. University of Florida; 2009. Available from: http://ufdc.ufl.edu/UFE0024291


University of Central Florida

27. Aminpour, Maral. Theoretical Studies Of Nanostructure Formation And Transport On Surfaces.

Degree: 2013, University of Central Florida

 This dissertation undertakes theoretical and computational research to characterize and understand in detail atomic configurations and electronic structural properties of surfaces and interfaces at the… (more)

Subjects/Keywords: Nanotechnology; nanostructure; predictive modeling; novel materials; transport; diffusion; surface science; thin film growth; dft; negf; md; ab initio; Physics; Dissertations, Academic  – Sciences, Sciences  – Dissertations, Academic

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APA (6th Edition):

Aminpour, M. (2013). Theoretical Studies Of Nanostructure Formation And Transport On Surfaces. (Doctoral Dissertation). University of Central Florida. Retrieved from https://stars.library.ucf.edu/etd/2826

Chicago Manual of Style (16th Edition):

Aminpour, Maral. “Theoretical Studies Of Nanostructure Formation And Transport On Surfaces.” 2013. Doctoral Dissertation, University of Central Florida. Accessed October 21, 2019. https://stars.library.ucf.edu/etd/2826.

MLA Handbook (7th Edition):

Aminpour, Maral. “Theoretical Studies Of Nanostructure Formation And Transport On Surfaces.” 2013. Web. 21 Oct 2019.

Vancouver:

Aminpour M. Theoretical Studies Of Nanostructure Formation And Transport On Surfaces. [Internet] [Doctoral dissertation]. University of Central Florida; 2013. [cited 2019 Oct 21]. Available from: https://stars.library.ucf.edu/etd/2826.

Council of Science Editors:

Aminpour M. Theoretical Studies Of Nanostructure Formation And Transport On Surfaces. [Doctoral Dissertation]. University of Central Florida; 2013. Available from: https://stars.library.ucf.edu/etd/2826

28. Jones, Alexander M. Onset of Spin Polarization in Four-Gate Quantum Point Contacts.

Degree: MS, Engineering and Applied Science: Computer Engineering, 2017, University of Cincinnati

 A series of simulations which utilize a Non-equilibrium Green’s function (NEGF) formalism is suggested which can provide indirect evidence of the fine and non-local electrostatic… (more)

Subjects/Keywords: Nanotechnology; Spin Polarization; Quantum Point Contact; NEGF simulation; nanoscale device; spin density; hysteresis

…correspond to NEGF simulations where both β and γ are set equal to 0. For the two bottom plots… …seen over a range of 1V of the common voltage sweep. In the work done by Wan et al., an NEGF… …the device. Simulations that use NEGF have revealed that LSOC is instrumental only in… …The NEGF approach was used to study in detail the ballistic conductance of a wide range of… …depended on ΔVG’s polarity. These results were supported qualitatively by NEGF simulations. The… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jones, A. M. (2017). Onset of Spin Polarization in Four-Gate Quantum Point Contacts. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1485188708345005

Chicago Manual of Style (16th Edition):

Jones, Alexander M. “Onset of Spin Polarization in Four-Gate Quantum Point Contacts.” 2017. Masters Thesis, University of Cincinnati. Accessed October 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1485188708345005.

MLA Handbook (7th Edition):

Jones, Alexander M. “Onset of Spin Polarization in Four-Gate Quantum Point Contacts.” 2017. Web. 21 Oct 2019.

Vancouver:

Jones AM. Onset of Spin Polarization in Four-Gate Quantum Point Contacts. [Internet] [Masters thesis]. University of Cincinnati; 2017. [cited 2019 Oct 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1485188708345005.

Council of Science Editors:

Jones AM. Onset of Spin Polarization in Four-Gate Quantum Point Contacts. [Masters Thesis]. University of Cincinnati; 2017. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1485188708345005

29. Paulla, Kirti Kant K. Computational Modeling of Nanosensors Based on Graphene Nanoribbons Including Electron-Phonon Effects.

Degree: PhD, Engineering PhD, 2013, Wright State University

 We investigate detection mechanisms of real time sensors, based on ultra-thin (single and bi-atomic layer thick) and ultra-narrow (~1nm) graphene nanoribbons (GNRs), using first principle… (more)

Subjects/Keywords: Materials Science; Engineering; Nanotechnology; Nanoscience; Ab-initio Modeling; NEGF; Nanosensor; Adsorption

…graphenenanoribbons was studied using DFT. Non-equilibrium Green’s function (NEGF)formalism for… 

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APA (6th Edition):

Paulla, K. K. K. (2013). Computational Modeling of Nanosensors Based on Graphene Nanoribbons Including Electron-Phonon Effects. (Doctoral Dissertation). Wright State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=wright1377374382

Chicago Manual of Style (16th Edition):

Paulla, Kirti Kant K. “Computational Modeling of Nanosensors Based on Graphene Nanoribbons Including Electron-Phonon Effects.” 2013. Doctoral Dissertation, Wright State University. Accessed October 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=wright1377374382.

MLA Handbook (7th Edition):

Paulla, Kirti Kant K. “Computational Modeling of Nanosensors Based on Graphene Nanoribbons Including Electron-Phonon Effects.” 2013. Web. 21 Oct 2019.

Vancouver:

Paulla KKK. Computational Modeling of Nanosensors Based on Graphene Nanoribbons Including Electron-Phonon Effects. [Internet] [Doctoral dissertation]. Wright State University; 2013. [cited 2019 Oct 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=wright1377374382.

Council of Science Editors:

Paulla KKK. Computational Modeling of Nanosensors Based on Graphene Nanoribbons Including Electron-Phonon Effects. [Doctoral Dissertation]. Wright State University; 2013. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=wright1377374382

30. ZOU XU. Electron transport study of two-terminal molecular electronic devices using ab initio methods.

Degree: 2005, National University of Singapore

Subjects/Keywords: Molecular electronics; two-terminal device; electron transport; NEGF; ab initio density functional theory; benzene based molecular device

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

XU, Z. (2005). Electron transport study of two-terminal molecular electronic devices using ab initio methods. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/14632

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

XU, ZOU. “Electron transport study of two-terminal molecular electronic devices using ab initio methods.” 2005. Thesis, National University of Singapore. Accessed October 21, 2019. http://scholarbank.nus.edu.sg/handle/10635/14632.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

XU, ZOU. “Electron transport study of two-terminal molecular electronic devices using ab initio methods.” 2005. Web. 21 Oct 2019.

Vancouver:

XU Z. Electron transport study of two-terminal molecular electronic devices using ab initio methods. [Internet] [Thesis]. National University of Singapore; 2005. [cited 2019 Oct 21]. Available from: http://scholarbank.nus.edu.sg/handle/10635/14632.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

XU Z. Electron transport study of two-terminal molecular electronic devices using ab initio methods. [Thesis]. National University of Singapore; 2005. Available from: http://scholarbank.nus.edu.sg/handle/10635/14632

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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