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You searched for subject:(Molecular Beam Epitaxy). Showing records 1 – 30 of 359 total matches.

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Rutgers University

1. Koirala, Nikesh, 1986-. Epitaxial engineering of high quality topological insulator films.

Degree: PhD, Physics and Astronomy, 2016, Rutgers University

Topological insulator is an exciting phase of matter because at its boundaries reside table-top version of Dirac fermions, while its bulk is supposed to be… (more)

Subjects/Keywords: Molecular beam epitaxy

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APA (6th Edition):

Koirala, Nikesh, 1. (2016). Epitaxial engineering of high quality topological insulator films. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/51335/

Chicago Manual of Style (16th Edition):

Koirala, Nikesh, 1986-. “Epitaxial engineering of high quality topological insulator films.” 2016. Doctoral Dissertation, Rutgers University. Accessed March 29, 2020. https://rucore.libraries.rutgers.edu/rutgers-lib/51335/.

MLA Handbook (7th Edition):

Koirala, Nikesh, 1986-. “Epitaxial engineering of high quality topological insulator films.” 2016. Web. 29 Mar 2020.

Vancouver:

Koirala, Nikesh 1. Epitaxial engineering of high quality topological insulator films. [Internet] [Doctoral dissertation]. Rutgers University; 2016. [cited 2020 Mar 29]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/51335/.

Council of Science Editors:

Koirala, Nikesh 1. Epitaxial engineering of high quality topological insulator films. [Doctoral Dissertation]. Rutgers University; 2016. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/51335/


University of Hong Kong

2. 焦璐; Jiao, Lu. Growth of transition metal dichalcogenide thin films by molecular beam epitaxy.

Degree: PhD, 2015, University of Hong Kong

Atomically thin transition metal dichalcogenides (TMD) have attracted intensive research interests due to their extraordinary properties and potential applications in electronics and optoelectronics. In this… (more)

Subjects/Keywords: Metallic films; Molecular beam epitaxy

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APA (6th Edition):

焦璐; Jiao, L. (2015). Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. (Doctoral Dissertation). University of Hong Kong. Retrieved from Jiao, L. [焦璐]. (2015). Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5576771 ; http://hdl.handle.net/10722/221085

Chicago Manual of Style (16th Edition):

焦璐; Jiao, Lu. “Growth of transition metal dichalcogenide thin films by molecular beam epitaxy.” 2015. Doctoral Dissertation, University of Hong Kong. Accessed March 29, 2020. Jiao, L. [焦璐]. (2015). Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5576771 ; http://hdl.handle.net/10722/221085.

MLA Handbook (7th Edition):

焦璐; Jiao, Lu. “Growth of transition metal dichalcogenide thin films by molecular beam epitaxy.” 2015. Web. 29 Mar 2020.

Vancouver:

焦璐; Jiao L. Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. [Internet] [Doctoral dissertation]. University of Hong Kong; 2015. [cited 2020 Mar 29]. Available from: Jiao, L. [焦璐]. (2015). Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5576771 ; http://hdl.handle.net/10722/221085.

Council of Science Editors:

焦璐; Jiao L. Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. [Doctoral Dissertation]. University of Hong Kong; 2015. Available from: Jiao, L. [焦璐]. (2015). Growth of transition metal dichalcogenide thin films by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5576771 ; http://hdl.handle.net/10722/221085


University of Hong Kong

3. 郭欣; Guo, Xin. Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films.

Degree: PhD, 2013, University of Hong Kong

 In this thesis, molecular-beam epitaxy (MBE) of three-dimensional (3D) topological insulator (TI) Bi_2 Se_3 thin films on different substrates is presented. The substrates experimented include… (more)

Subjects/Keywords: Thin films; Molecular beam epitaxy

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APA (6th Edition):

郭欣; Guo, X. (2013). Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. (Doctoral Dissertation). University of Hong Kong. Retrieved from Guo, X. [郭欣]. (2013). Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5153683 ; http://dx.doi.org/10.5353/th_b5153683 ; http://hdl.handle.net/10722/196030

Chicago Manual of Style (16th Edition):

郭欣; Guo, Xin. “Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films.” 2013. Doctoral Dissertation, University of Hong Kong. Accessed March 29, 2020. Guo, X. [郭欣]. (2013). Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5153683 ; http://dx.doi.org/10.5353/th_b5153683 ; http://hdl.handle.net/10722/196030.

MLA Handbook (7th Edition):

郭欣; Guo, Xin. “Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films.” 2013. Web. 29 Mar 2020.

Vancouver:

郭欣; Guo X. Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. [Internet] [Doctoral dissertation]. University of Hong Kong; 2013. [cited 2020 Mar 29]. Available from: Guo, X. [郭欣]. (2013). Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5153683 ; http://dx.doi.org/10.5353/th_b5153683 ; http://hdl.handle.net/10722/196030.

Council of Science Editors:

郭欣; Guo X. Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. [Doctoral Dissertation]. University of Hong Kong; 2013. Available from: Guo, X. [郭欣]. (2013). Molecular beam epitaxy of three dimensional topological insulator Bi₂Se₃ thin films. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5153683 ; http://dx.doi.org/10.5353/th_b5153683 ; http://hdl.handle.net/10722/196030


Oregon State University

4. Ebner, John. The growth of ternary compound semiconductors by molecular beam epitaxy.

Degree: MS, Electrical and Computer Engineering, 1987, Oregon State University

 This thesis reports on an investigation of the growth, by Molecular Beam Epitaxy, of III,III-V ternary compound semiconductors. Strained and unstrained growth was studied via… (more)

Subjects/Keywords: Molecular beam epitaxy

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APA (6th Edition):

Ebner, J. (1987). The growth of ternary compound semiconductors by molecular beam epitaxy. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/41618

Chicago Manual of Style (16th Edition):

Ebner, John. “The growth of ternary compound semiconductors by molecular beam epitaxy.” 1987. Masters Thesis, Oregon State University. Accessed March 29, 2020. http://hdl.handle.net/1957/41618.

MLA Handbook (7th Edition):

Ebner, John. “The growth of ternary compound semiconductors by molecular beam epitaxy.” 1987. Web. 29 Mar 2020.

Vancouver:

Ebner J. The growth of ternary compound semiconductors by molecular beam epitaxy. [Internet] [Masters thesis]. Oregon State University; 1987. [cited 2020 Mar 29]. Available from: http://hdl.handle.net/1957/41618.

Council of Science Editors:

Ebner J. The growth of ternary compound semiconductors by molecular beam epitaxy. [Masters Thesis]. Oregon State University; 1987. Available from: http://hdl.handle.net/1957/41618


The Ohio State University

5. Lin, Yong. Science and applications of III-V graded anion metamorphic buffers on INP substrates.

Degree: PhD, Electrical Engineering, 2007, The Ohio State University

 Anion-based InAsP metamorphic step-graded buffers are a novel solution to the lattice-mismatch problem of devices with the lattice constant between InP and InAs grown on… (more)

Subjects/Keywords: InAsP; Metamorphic graded buffers; Molecular beam epitaxy

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APA (6th Edition):

Lin, Y. (2007). Science and applications of III-V graded anion metamorphic buffers on INP substrates. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1172852334

Chicago Manual of Style (16th Edition):

Lin, Yong. “Science and applications of III-V graded anion metamorphic buffers on INP substrates.” 2007. Doctoral Dissertation, The Ohio State University. Accessed March 29, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1172852334.

MLA Handbook (7th Edition):

Lin, Yong. “Science and applications of III-V graded anion metamorphic buffers on INP substrates.” 2007. Web. 29 Mar 2020.

Vancouver:

Lin Y. Science and applications of III-V graded anion metamorphic buffers on INP substrates. [Internet] [Doctoral dissertation]. The Ohio State University; 2007. [cited 2020 Mar 29]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1172852334.

Council of Science Editors:

Lin Y. Science and applications of III-V graded anion metamorphic buffers on INP substrates. [Doctoral Dissertation]. The Ohio State University; 2007. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1172852334


Penn State University

6. Lee, June Hyuk. GROWTH OF MULTIFERROIC OXIDES BY MOLECULAR-BEAM EPITAXY.

Degree: PhD, Materials Science and Engineering, 2011, Penn State University

 Multiferroic materials, which simultaneously exhibit ferroelectricity and ferromagnetism, have attracted a great deal of attention due to their physical origin and potential application in novel… (more)

Subjects/Keywords: Molecular-beam epitaxy; Multiferroics; Ferroelectrics; Ferromagnet

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APA (6th Edition):

Lee, J. H. (2011). GROWTH OF MULTIFERROIC OXIDES BY MOLECULAR-BEAM EPITAXY. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/11504

Chicago Manual of Style (16th Edition):

Lee, June Hyuk. “GROWTH OF MULTIFERROIC OXIDES BY MOLECULAR-BEAM EPITAXY.” 2011. Doctoral Dissertation, Penn State University. Accessed March 29, 2020. https://etda.libraries.psu.edu/catalog/11504.

MLA Handbook (7th Edition):

Lee, June Hyuk. “GROWTH OF MULTIFERROIC OXIDES BY MOLECULAR-BEAM EPITAXY.” 2011. Web. 29 Mar 2020.

Vancouver:

Lee JH. GROWTH OF MULTIFERROIC OXIDES BY MOLECULAR-BEAM EPITAXY. [Internet] [Doctoral dissertation]. Penn State University; 2011. [cited 2020 Mar 29]. Available from: https://etda.libraries.psu.edu/catalog/11504.

Council of Science Editors:

Lee JH. GROWTH OF MULTIFERROIC OXIDES BY MOLECULAR-BEAM EPITAXY. [Doctoral Dissertation]. Penn State University; 2011. Available from: https://etda.libraries.psu.edu/catalog/11504

7. Tournet, Julie. Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems.

Degree: 2015, University of Waterloo

 The growth of Aluminum (Al) on semiconductors and dielectrics is a cornerstone in the quest for scalable quantum computing systems. Indeed the electrical properties of… (more)

Subjects/Keywords: Molecular Beam Epitaxy; Aluminum; Semiconductors; Superconducting resonators

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APA (6th Edition):

Tournet, J. (2015). Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/9550

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tournet, Julie. “Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems.” 2015. Thesis, University of Waterloo. Accessed March 29, 2020. http://hdl.handle.net/10012/9550.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tournet, Julie. “Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems.” 2015. Web. 29 Mar 2020.

Vancouver:

Tournet J. Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems. [Internet] [Thesis]. University of Waterloo; 2015. [cited 2020 Mar 29]. Available from: http://hdl.handle.net/10012/9550.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tournet J. Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems. [Thesis]. University of Waterloo; 2015. Available from: http://hdl.handle.net/10012/9550

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Oklahoma

8. Gaspe, Chomani Kishanika. Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb.

Degree: PhD, 2013, University of Oklahoma

 An experimental study of growth, structural and electronic properties of elemental Sb QWs with GaSb barriers was performed to explore their potential as topological insulators.… (more)

Subjects/Keywords: Molecular beam epitaxy; Quantum wells; Electron transport

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APA (6th Edition):

Gaspe, C. K. (2013). Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb. (Doctoral Dissertation). University of Oklahoma. Retrieved from http://hdl.handle.net/11244/318770

Chicago Manual of Style (16th Edition):

Gaspe, Chomani Kishanika. “Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb.” 2013. Doctoral Dissertation, University of Oklahoma. Accessed March 29, 2020. http://hdl.handle.net/11244/318770.

MLA Handbook (7th Edition):

Gaspe, Chomani Kishanika. “Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb.” 2013. Web. 29 Mar 2020.

Vancouver:

Gaspe CK. Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb. [Internet] [Doctoral dissertation]. University of Oklahoma; 2013. [cited 2020 Mar 29]. Available from: http://hdl.handle.net/11244/318770.

Council of Science Editors:

Gaspe CK. Molecular Beam Epitaxy of Narrow Gap Quantum Wells: InSb, InGaAs and Elemental Sb. [Doctoral Dissertation]. University of Oklahoma; 2013. Available from: http://hdl.handle.net/11244/318770


University of North Texas

9. Elmarhoumi, Nader M. Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization.

Degree: 2013, University of North Texas

 Semi-conductor industry relies heavily on silicon (Si). However, Si is not a direct-band gap semi-conductor. Consequently, Si does not possess great versatility for multi-functional applications… (more)

Subjects/Keywords: Semi-conductor; silicides; molecular beam epitaxy

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APA (6th Edition):

Elmarhoumi, N. M. (2013). Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc490047/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Elmarhoumi, Nader M. “Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization.” 2013. Thesis, University of North Texas. Accessed March 29, 2020. https://digital.library.unt.edu/ark:/67531/metadc490047/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Elmarhoumi, Nader M. “Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization.” 2013. Web. 29 Mar 2020.

Vancouver:

Elmarhoumi NM. Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization. [Internet] [Thesis]. University of North Texas; 2013. [cited 2020 Mar 29]. Available from: https://digital.library.unt.edu/ark:/67531/metadc490047/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Elmarhoumi NM. Novel Semi-Conductor Material Systems: Molecular Beam Epitaxial Growth and Characterization. [Thesis]. University of North Texas; 2013. Available from: https://digital.library.unt.edu/ark:/67531/metadc490047/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

10. Tian, Jiachao. MBE-grown self-assembled iron nanowires.

Degree: 2011, Hong Kong University of Science and Technology

 In recent years, magnetic nanowires (NWs) have been extensively studied because of their novel physical properties and their potential applications in a number of magnetic… (more)

Subjects/Keywords: Molecular beam epitaxy ; Nanowires ; Ferromagnetic materials

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APA (6th Edition):

Tian, J. (2011). MBE-grown self-assembled iron nanowires. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-7430 ; https://doi.org/10.14711/thesis-b1155394 ; http://repository.ust.hk/ir/bitstream/1783.1-7430/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tian, Jiachao. “MBE-grown self-assembled iron nanowires.” 2011. Thesis, Hong Kong University of Science and Technology. Accessed March 29, 2020. http://repository.ust.hk/ir/Record/1783.1-7430 ; https://doi.org/10.14711/thesis-b1155394 ; http://repository.ust.hk/ir/bitstream/1783.1-7430/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tian, Jiachao. “MBE-grown self-assembled iron nanowires.” 2011. Web. 29 Mar 2020.

Vancouver:

Tian J. MBE-grown self-assembled iron nanowires. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2011. [cited 2020 Mar 29]. Available from: http://repository.ust.hk/ir/Record/1783.1-7430 ; https://doi.org/10.14711/thesis-b1155394 ; http://repository.ust.hk/ir/bitstream/1783.1-7430/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tian J. MBE-grown self-assembled iron nanowires. [Thesis]. Hong Kong University of Science and Technology; 2011. Available from: http://repository.ust.hk/ir/Record/1783.1-7430 ; https://doi.org/10.14711/thesis-b1155394 ; http://repository.ust.hk/ir/bitstream/1783.1-7430/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

11. Wang, Gan. MBE-grown binary chalcogenide 1D nanostructures : synthesis, structural analysis and formation mechanisms.

Degree: 2011, Hong Kong University of Science and Technology

 Recently, One-dimensional nanostructures such as nanowires, nanograting, and nanotrenches, have attracted great attention due to their important applications in nano science and technology. They are… (more)

Subjects/Keywords: Molecular beam epitaxy ; Chalcogenides ; Nanostructures ; Compound semiconductors

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APA (6th Edition):

Wang, G. (2011). MBE-grown binary chalcogenide 1D nanostructures : synthesis, structural analysis and formation mechanisms. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-7135 ; https://doi.org/10.14711/thesis-b1136684 ; http://repository.ust.hk/ir/bitstream/1783.1-7135/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Gan. “MBE-grown binary chalcogenide 1D nanostructures : synthesis, structural analysis and formation mechanisms.” 2011. Thesis, Hong Kong University of Science and Technology. Accessed March 29, 2020. http://repository.ust.hk/ir/Record/1783.1-7135 ; https://doi.org/10.14711/thesis-b1136684 ; http://repository.ust.hk/ir/bitstream/1783.1-7135/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Gan. “MBE-grown binary chalcogenide 1D nanostructures : synthesis, structural analysis and formation mechanisms.” 2011. Web. 29 Mar 2020.

Vancouver:

Wang G. MBE-grown binary chalcogenide 1D nanostructures : synthesis, structural analysis and formation mechanisms. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2011. [cited 2020 Mar 29]. Available from: http://repository.ust.hk/ir/Record/1783.1-7135 ; https://doi.org/10.14711/thesis-b1136684 ; http://repository.ust.hk/ir/bitstream/1783.1-7135/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang G. MBE-grown binary chalcogenide 1D nanostructures : synthesis, structural analysis and formation mechanisms. [Thesis]. Hong Kong University of Science and Technology; 2011. Available from: http://repository.ust.hk/ir/Record/1783.1-7135 ; https://doi.org/10.14711/thesis-b1136684 ; http://repository.ust.hk/ir/bitstream/1783.1-7135/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Drexel University

12. Smith, Cole Richard. Correlation of Structure and Properties in Perovskite Oxide Thin Films.

Degree: 2014, Drexel University

Rare-earth nickelate (RNiO3) materials exhibit metal-to-insulator transitions at given critical temperatures, which are highly correlated to the relative radii of the rare-earth elements to the… (more)

Subjects/Keywords: Materials science; Crystallography; Molecular beam epitaxy

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APA (6th Edition):

Smith, C. R. (2014). Correlation of Structure and Properties in Perovskite Oxide Thin Films. (Thesis). Drexel University. Retrieved from http://hdl.handle.net/1860/idea:6388

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Smith, Cole Richard. “Correlation of Structure and Properties in Perovskite Oxide Thin Films.” 2014. Thesis, Drexel University. Accessed March 29, 2020. http://hdl.handle.net/1860/idea:6388.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Smith, Cole Richard. “Correlation of Structure and Properties in Perovskite Oxide Thin Films.” 2014. Web. 29 Mar 2020.

Vancouver:

Smith CR. Correlation of Structure and Properties in Perovskite Oxide Thin Films. [Internet] [Thesis]. Drexel University; 2014. [cited 2020 Mar 29]. Available from: http://hdl.handle.net/1860/idea:6388.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Smith CR. Correlation of Structure and Properties in Perovskite Oxide Thin Films. [Thesis]. Drexel University; 2014. Available from: http://hdl.handle.net/1860/idea:6388

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

13. Tu, Ya-ting. The Study of Formation Mechanism and Stability of Rocksalt Structure MgZnO Epilayer.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 Alloying ZnO (Eg~3.3 eV) with MgO (Eg~7.7 eV) enables widening of band gap of ZnO. The coverage of the ZnO band gap will increase from… (more)

Subjects/Keywords: rocksalt structure; MgZnO; hetero-epitaxy; martensitic transformation; phase stability; molecular beam epitaxy; wurtzite structure

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APA (6th Edition):

Tu, Y. (2014). The Study of Formation Mechanism and Stability of Rocksalt Structure MgZnO Epilayer. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804114-124034

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tu, Ya-ting. “The Study of Formation Mechanism and Stability of Rocksalt Structure MgZnO Epilayer.” 2014. Thesis, NSYSU. Accessed March 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804114-124034.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tu, Ya-ting. “The Study of Formation Mechanism and Stability of Rocksalt Structure MgZnO Epilayer.” 2014. Web. 29 Mar 2020.

Vancouver:

Tu Y. The Study of Formation Mechanism and Stability of Rocksalt Structure MgZnO Epilayer. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Mar 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804114-124034.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tu Y. The Study of Formation Mechanism and Stability of Rocksalt Structure MgZnO Epilayer. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804114-124034

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

14. Brooks, Charles M. The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy.

Degree: PhD, Materials Science and Engineering, 2012, Penn State University

 Included in this work is a range of studies on films of homoeptaxial and heteroepitaxial films of SrTiO3 and the first reported phase-pure films of… (more)

Subjects/Keywords: oxide; thin film; MBE; epitaxy; SrTiO3; LuFe2O4; molecular-beam epitaxy; strontium titanate; lutetium ferrite

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APA (6th Edition):

Brooks, C. M. (2012). The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/16199

Chicago Manual of Style (16th Edition):

Brooks, Charles M. “The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy.” 2012. Doctoral Dissertation, Penn State University. Accessed March 29, 2020. https://etda.libraries.psu.edu/catalog/16199.

MLA Handbook (7th Edition):

Brooks, Charles M. “The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy.” 2012. Web. 29 Mar 2020.

Vancouver:

Brooks CM. The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy. [Internet] [Doctoral dissertation]. Penn State University; 2012. [cited 2020 Mar 29]. Available from: https://etda.libraries.psu.edu/catalog/16199.

Council of Science Editors:

Brooks CM. The growth of strontium titanate and lutetium ferrite thin films by molecular-beam epitaxy. [Doctoral Dissertation]. Penn State University; 2012. Available from: https://etda.libraries.psu.edu/catalog/16199


Georgia Tech

15. Tong, Wusheng. Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures.

Degree: PhD, Physics, 1996, Georgia Tech

Subjects/Keywords: Crystal growth; Molecular beam epitaxy; Epitaxy

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APA (6th Edition):

Tong, W. (1996). Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/31012

Chicago Manual of Style (16th Edition):

Tong, Wusheng. “Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures.” 1996. Doctoral Dissertation, Georgia Tech. Accessed March 29, 2020. http://hdl.handle.net/1853/31012.

MLA Handbook (7th Edition):

Tong, Wusheng. “Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures.” 1996. Web. 29 Mar 2020.

Vancouver:

Tong W. Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures. [Internet] [Doctoral dissertation]. Georgia Tech; 1996. [cited 2020 Mar 29]. Available from: http://hdl.handle.net/1853/31012.

Council of Science Editors:

Tong W. Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent strutures. [Doctoral Dissertation]. Georgia Tech; 1996. Available from: http://hdl.handle.net/1853/31012


Heriot-Watt University

16. Stewart, Helen. Studies into the growth and doping of zinc selenide and zinc cadmium selenide.

Degree: PhD, 1996, Heriot-Watt University

Subjects/Keywords: 530.41; Molecular beam epitaxy; Semiconductors

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APA (6th Edition):

Stewart, H. (1996). Studies into the growth and doping of zinc selenide and zinc cadmium selenide. (Doctoral Dissertation). Heriot-Watt University. Retrieved from http://hdl.handle.net/10399/734

Chicago Manual of Style (16th Edition):

Stewart, Helen. “Studies into the growth and doping of zinc selenide and zinc cadmium selenide.” 1996. Doctoral Dissertation, Heriot-Watt University. Accessed March 29, 2020. http://hdl.handle.net/10399/734.

MLA Handbook (7th Edition):

Stewart, Helen. “Studies into the growth and doping of zinc selenide and zinc cadmium selenide.” 1996. Web. 29 Mar 2020.

Vancouver:

Stewart H. Studies into the growth and doping of zinc selenide and zinc cadmium selenide. [Internet] [Doctoral dissertation]. Heriot-Watt University; 1996. [cited 2020 Mar 29]. Available from: http://hdl.handle.net/10399/734.

Council of Science Editors:

Stewart H. Studies into the growth and doping of zinc selenide and zinc cadmium selenide. [Doctoral Dissertation]. Heriot-Watt University; 1996. Available from: http://hdl.handle.net/10399/734


NSYSU

17. Chang, Ching-wen. The growth, fabrication, and analyses of III-V nitride thin film and nanorod photovoltaic devices.

Degree: PhD, Physics, 2017, NSYSU

 The purpose of this dissertation is developing the Si (111) based nitride multi-junction solar cells. Nitride thin films/ nanorods are grown on Si (111) wafer,… (more)

Subjects/Keywords: Molecular beam epitaxy (MBE); III-Nitride; Solar cell; nanorods

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APA (6th Edition):

Chang, C. (2017). The growth, fabrication, and analyses of III-V nitride thin film and nanorod photovoltaic devices. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911117-142948

Chicago Manual of Style (16th Edition):

Chang, Ching-wen. “The growth, fabrication, and analyses of III-V nitride thin film and nanorod photovoltaic devices.” 2017. Doctoral Dissertation, NSYSU. Accessed March 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911117-142948.

MLA Handbook (7th Edition):

Chang, Ching-wen. “The growth, fabrication, and analyses of III-V nitride thin film and nanorod photovoltaic devices.” 2017. Web. 29 Mar 2020.

Vancouver:

Chang C. The growth, fabrication, and analyses of III-V nitride thin film and nanorod photovoltaic devices. [Internet] [Doctoral dissertation]. NSYSU; 2017. [cited 2020 Mar 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911117-142948.

Council of Science Editors:

Chang C. The growth, fabrication, and analyses of III-V nitride thin film and nanorod photovoltaic devices. [Doctoral Dissertation]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911117-142948


NSYSU

18. Yeh, Hsiu-Hung. Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 Attempts of growing cuprous oxide (Cu2O) epitaxial film on Cu substrate by molecular beam epitaxy were made in this work. The main purpose is to… (more)

Subjects/Keywords: epitaxial growth; Cu2O; Cu substrate; electron backscatter diffraction; molecular beam epitaxy

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APA (6th Edition):

Yeh, H. (2017). Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729117-195028

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yeh, Hsiu-Hung. “Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy.” 2017. Thesis, NSYSU. Accessed March 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729117-195028.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yeh, Hsiu-Hung. “Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy.” 2017. Web. 29 Mar 2020.

Vancouver:

Yeh H. Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2017. [cited 2020 Mar 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729117-195028.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yeh H. Epitaxial and characteristization of Cu2O on Cu substrate by Molecular Beam Epitaxy. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729117-195028

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Hong Kong

19. Zhu, Wenkai. MBE growth and characterization of GaN film.

Degree: M. Phil., 1999, University of Hong Kong

published_or_final_version

Industrial and Manufacturing Systems Engineering

Master

Master of Philosophy

Subjects/Keywords: Gallium nitride; Molecular beam epitaxy

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APA (6th Edition):

Zhu, W. (1999). MBE growth and characterization of GaN film. (Masters Thesis). University of Hong Kong. Retrieved from Zhu, W. [朱文凱]. (1999). MBE growth and characterization of GaN film. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122217 ; http://dx.doi.org/10.5353/th_b3122217 ; http://hdl.handle.net/10722/209586

Chicago Manual of Style (16th Edition):

Zhu, Wenkai. “MBE growth and characterization of GaN film.” 1999. Masters Thesis, University of Hong Kong. Accessed March 29, 2020. Zhu, W. [朱文凱]. (1999). MBE growth and characterization of GaN film. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122217 ; http://dx.doi.org/10.5353/th_b3122217 ; http://hdl.handle.net/10722/209586.

MLA Handbook (7th Edition):

Zhu, Wenkai. “MBE growth and characterization of GaN film.” 1999. Web. 29 Mar 2020.

Vancouver:

Zhu W. MBE growth and characterization of GaN film. [Internet] [Masters thesis]. University of Hong Kong; 1999. [cited 2020 Mar 29]. Available from: Zhu, W. [朱文凱]. (1999). MBE growth and characterization of GaN film. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122217 ; http://dx.doi.org/10.5353/th_b3122217 ; http://hdl.handle.net/10722/209586.

Council of Science Editors:

Zhu W. MBE growth and characterization of GaN film. [Masters Thesis]. University of Hong Kong; 1999. Available from: Zhu, W. [朱文凱]. (1999). MBE growth and characterization of GaN film. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122217 ; http://dx.doi.org/10.5353/th_b3122217 ; http://hdl.handle.net/10722/209586


University of Delaware

20. Hickey, Ryan. The growth of strain engineered germanium tin alloys for mid-infrared detectors by molecular beam epitaxy .

Degree: 2017, University of Delaware

 Interest in near and mid-infrared optoelectronic devices for sensing, security, medical imaging, and telecommunications has led to an immense effort to create new materials capable… (more)

Subjects/Keywords: Applied sciences; GeSn; Germanium tin; Infrared detectors; MBE; Molecular beam epitaxy

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APA (6th Edition):

Hickey, R. (2017). The growth of strain engineered germanium tin alloys for mid-infrared detectors by molecular beam epitaxy . (Doctoral Dissertation). University of Delaware. Retrieved from http://udspace.udel.edu/handle/19716/23350

Chicago Manual of Style (16th Edition):

Hickey, Ryan. “The growth of strain engineered germanium tin alloys for mid-infrared detectors by molecular beam epitaxy .” 2017. Doctoral Dissertation, University of Delaware. Accessed March 29, 2020. http://udspace.udel.edu/handle/19716/23350.

MLA Handbook (7th Edition):

Hickey, Ryan. “The growth of strain engineered germanium tin alloys for mid-infrared detectors by molecular beam epitaxy .” 2017. Web. 29 Mar 2020.

Vancouver:

Hickey R. The growth of strain engineered germanium tin alloys for mid-infrared detectors by molecular beam epitaxy . [Internet] [Doctoral dissertation]. University of Delaware; 2017. [cited 2020 Mar 29]. Available from: http://udspace.udel.edu/handle/19716/23350.

Council of Science Editors:

Hickey R. The growth of strain engineered germanium tin alloys for mid-infrared detectors by molecular beam epitaxy . [Doctoral Dissertation]. University of Delaware; 2017. Available from: http://udspace.udel.edu/handle/19716/23350

21. cheng, yana. EPITAXIAL GROWTH OF SiC/AlN AND Si QUANTUM DOT HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY.

Degree: PhD, Physics, 2014, Brown University

 Abstract of “Epitaxial growth of SiC/AlN and Si quantum dot heterostructures by molecular beam epitaxy,” by Yana Cheng, Ph.D., Brown University, May 2014 SiC has… (more)

Subjects/Keywords: molecular beam epitaxy; heterostructures; SiC; Si qunatum dot

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APA (6th Edition):

cheng, y. (2014). EPITAXIAL GROWTH OF SiC/AlN AND Si QUANTUM DOT HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY. (Doctoral Dissertation). Brown University. Retrieved from https://repository.library.brown.edu/studio/item/bdr:386123/

Chicago Manual of Style (16th Edition):

cheng, yana. “EPITAXIAL GROWTH OF SiC/AlN AND Si QUANTUM DOT HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY.” 2014. Doctoral Dissertation, Brown University. Accessed March 29, 2020. https://repository.library.brown.edu/studio/item/bdr:386123/.

MLA Handbook (7th Edition):

cheng, yana. “EPITAXIAL GROWTH OF SiC/AlN AND Si QUANTUM DOT HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY.” 2014. Web. 29 Mar 2020.

Vancouver:

cheng y. EPITAXIAL GROWTH OF SiC/AlN AND Si QUANTUM DOT HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY. [Internet] [Doctoral dissertation]. Brown University; 2014. [cited 2020 Mar 29]. Available from: https://repository.library.brown.edu/studio/item/bdr:386123/.

Council of Science Editors:

cheng y. EPITAXIAL GROWTH OF SiC/AlN AND Si QUANTUM DOT HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY. [Doctoral Dissertation]. Brown University; 2014. Available from: https://repository.library.brown.edu/studio/item/bdr:386123/


University of Notre Dame

22. Richard E Pimpinella. Fabrication and Physical Properties of Semiconducting Nanowires Grown by Molecular Beam Epitaxy</h1>.

Degree: PhD, Physics, 2013, University of Notre Dame

  Nanowires have received significant interest from the scientific community due to their potential for electronic applications. This thesis is devoted to understanding the growth… (more)

Subjects/Keywords: self-assembled eutectic droplet formation.; Molecular Beam Epitaxy; Nanowires; Magnetic Nanowires

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APA (6th Edition):

Pimpinella, R. E. (2013). Fabrication and Physical Properties of Semiconducting Nanowires Grown by Molecular Beam Epitaxy</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/8c97kp80h59

Chicago Manual of Style (16th Edition):

Pimpinella, Richard E. “Fabrication and Physical Properties of Semiconducting Nanowires Grown by Molecular Beam Epitaxy</h1>.” 2013. Doctoral Dissertation, University of Notre Dame. Accessed March 29, 2020. https://curate.nd.edu/show/8c97kp80h59.

MLA Handbook (7th Edition):

Pimpinella, Richard E. “Fabrication and Physical Properties of Semiconducting Nanowires Grown by Molecular Beam Epitaxy</h1>.” 2013. Web. 29 Mar 2020.

Vancouver:

Pimpinella RE. Fabrication and Physical Properties of Semiconducting Nanowires Grown by Molecular Beam Epitaxy</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2013. [cited 2020 Mar 29]. Available from: https://curate.nd.edu/show/8c97kp80h59.

Council of Science Editors:

Pimpinella RE. Fabrication and Physical Properties of Semiconducting Nanowires Grown by Molecular Beam Epitaxy</h1>. [Doctoral Dissertation]. University of Notre Dame; 2013. Available from: https://curate.nd.edu/show/8c97kp80h59


University of Notre Dame

23. Joseph Arthur Hagmann. Magnetotransport Investigation of Bismuth Chalcogenide Topological Insulators</h1>.

Degree: PhD, Physics, 2013, University of Notre Dame

  V2VI3 materials Bi2Se3 and Bi2Te3 with tetradymite rhombohedral layered structures consisting of repeating layers of Se(Te)-Bi-Se(Te)-Bi-Se(Te) are in a class of electronic materials called… (more)

Subjects/Keywords: transport; electronic materials; molecular beam epitaxy; Bi2Se3; topological insulators; Bi2Te3

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APA (6th Edition):

Hagmann, J. A. (2013). Magnetotransport Investigation of Bismuth Chalcogenide Topological Insulators</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/6969z031n6g

Chicago Manual of Style (16th Edition):

Hagmann, Joseph Arthur. “Magnetotransport Investigation of Bismuth Chalcogenide Topological Insulators</h1>.” 2013. Doctoral Dissertation, University of Notre Dame. Accessed March 29, 2020. https://curate.nd.edu/show/6969z031n6g.

MLA Handbook (7th Edition):

Hagmann, Joseph Arthur. “Magnetotransport Investigation of Bismuth Chalcogenide Topological Insulators</h1>.” 2013. Web. 29 Mar 2020.

Vancouver:

Hagmann JA. Magnetotransport Investigation of Bismuth Chalcogenide Topological Insulators</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2013. [cited 2020 Mar 29]. Available from: https://curate.nd.edu/show/6969z031n6g.

Council of Science Editors:

Hagmann JA. Magnetotransport Investigation of Bismuth Chalcogenide Topological Insulators</h1>. [Doctoral Dissertation]. University of Notre Dame; 2013. Available from: https://curate.nd.edu/show/6969z031n6g


NSYSU

24. Chang, Chia-yu. Optical Characteristics of InGaN Solar Cell Structural Materials.

Degree: Master, Physics, 2017, NSYSU

 In this thesis we study the physical properties of gallium nitride (GaN) nanorods and InGaN thin films. These samples were grown by plasma assisted molecular(more)

Subjects/Keywords: nanostructure; plasma-assisted molecular beam epitaxy; InGaN; solar cells structures; nanorods

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APA (6th Edition):

Chang, C. (2017). Optical Characteristics of InGaN Solar Cell Structural Materials. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-182142

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Chia-yu. “Optical Characteristics of InGaN Solar Cell Structural Materials.” 2017. Thesis, NSYSU. Accessed March 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-182142.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Chia-yu. “Optical Characteristics of InGaN Solar Cell Structural Materials.” 2017. Web. 29 Mar 2020.

Vancouver:

Chang C. Optical Characteristics of InGaN Solar Cell Structural Materials. [Internet] [Thesis]. NSYSU; 2017. [cited 2020 Mar 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-182142.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang C. Optical Characteristics of InGaN Solar Cell Structural Materials. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-182142

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


The Ohio State University

25. Kent, Thomas Frederick. III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering.

Degree: PhD, Materials Science and Engineering, 2014, The Ohio State University

 Over the last two decades, group III-nitride compound semiconductor materials have revolutionized modern optoelectronics and high frequency devices. In this work, III-nitride based compound semiconductor… (more)

Subjects/Keywords: Materials Science; Semiconductor; molecular beam epitaxy; Optoelectronics; Spintronics; Bandgap Engineering; photoluminescence

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APA (6th Edition):

Kent, T. F. (2014). III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1408564155

Chicago Manual of Style (16th Edition):

Kent, Thomas Frederick. “III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering.” 2014. Doctoral Dissertation, The Ohio State University. Accessed March 29, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1408564155.

MLA Handbook (7th Edition):

Kent, Thomas Frederick. “III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering.” 2014. Web. 29 Mar 2020.

Vancouver:

Kent TF. III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering. [Internet] [Doctoral dissertation]. The Ohio State University; 2014. [cited 2020 Mar 29]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1408564155.

Council of Science Editors:

Kent TF. III-Nitride Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering. [Doctoral Dissertation]. The Ohio State University; 2014. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1408564155


NSYSU

26. Yang, Chen-chi. Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy.

Degree: Master, Physics, 2011, NSYSU

 This article describes that we grew InGaN ternary films by Plasma- Assisted Molecular Beam Epitaxy (PAMBE) on the ZnO substrate O-polar (0001) surface. Before we… (more)

Subjects/Keywords: InGaN; Molecular Beam Epitaxy; ZnO; period shutter control method; single content

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APA (6th Edition):

Yang, C. (2011). Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712111-151511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Chen-chi. “Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy.” 2011. Thesis, NSYSU. Accessed March 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712111-151511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Chen-chi. “Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy.” 2011. Web. 29 Mar 2020.

Vancouver:

Yang C. Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2011. [cited 2020 Mar 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712111-151511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang C. Characterization and growth of InGaN on ZnO(0001) substrate by Plasma-Assisted Molecular Beam Epitaxy. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712111-151511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

27. Kao, Hsiang-shun. Growth and Characterization of Mn Delta-Doped III-Nitrides Nanorods Fabricated by Plasma-Assisted Molecular Beam Epitaxy.

Degree: Master, Physics, 2013, NSYSU

 Plasma-assisted molecular beam epitaxy (PAMBE) synthesized diluted magnetic semiconductors nanorods on n-type Si (111) substrates are investigated in this report. Mn atoms are doped into… (more)

Subjects/Keywords: GaN; Diluted Magnetic Semiconductors; Mn:GaN; Molecular Beam Epitaxy; Nanorods

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kao, H. (2013). Growth and Characterization of Mn Delta-Doped III-Nitrides Nanorods Fabricated by Plasma-Assisted Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712113-031646

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kao, Hsiang-shun. “Growth and Characterization of Mn Delta-Doped III-Nitrides Nanorods Fabricated by Plasma-Assisted Molecular Beam Epitaxy.” 2013. Thesis, NSYSU. Accessed March 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712113-031646.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kao, Hsiang-shun. “Growth and Characterization of Mn Delta-Doped III-Nitrides Nanorods Fabricated by Plasma-Assisted Molecular Beam Epitaxy.” 2013. Web. 29 Mar 2020.

Vancouver:

Kao H. Growth and Characterization of Mn Delta-Doped III-Nitrides Nanorods Fabricated by Plasma-Assisted Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2013. [cited 2020 Mar 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712113-031646.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kao H. Growth and Characterization of Mn Delta-Doped III-Nitrides Nanorods Fabricated by Plasma-Assisted Molecular Beam Epitaxy. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712113-031646

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

28. Hsieh, Wan-Shan. Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy.

Degree: Master, Physics, 2014, NSYSU

 This article describes that we grew GaN films by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) on the (La,Sr)(Al,Ta)O3 substrate (100) surface. Lattice parameter of (La,Sr)(Al,Ta)O3 are… (more)

Subjects/Keywords: Molecular beam epitaxy; Non-polar; Growth temperature; LSAT; nanocrystal

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsieh, W. (2014). Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0016114-203916

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsieh, Wan-Shan. “Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy.” 2014. Thesis, NSYSU. Accessed March 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0016114-203916.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsieh, Wan-Shan. “Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy.” 2014. Web. 29 Mar 2020.

Vancouver:

Hsieh W. Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Mar 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0016114-203916.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsieh W. Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0016114-203916

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

29. Lin, Yuan-Ting. Growth and Characterization of Diluted Magnetic Semiconductors GaMnN Thin Films and Nanorods.

Degree: PhD, Physics, 2014, NSYSU

 Plasma-assisted molecular beam epitaxy growth and characteristics of GaMnN diluted magnetic semiconductors, including epitaxial thin films and one-dimensional nanorods, are investigated in this dissertation. Both… (more)

Subjects/Keywords: Molecular Beam Epitaxy; GaMnN; Nanorods; Diluted Magnetic Semiconductors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, Y. (2014). Growth and Characterization of Diluted Magnetic Semiconductors GaMnN Thin Films and Nanorods. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0618114-171135

Chicago Manual of Style (16th Edition):

Lin, Yuan-Ting. “Growth and Characterization of Diluted Magnetic Semiconductors GaMnN Thin Films and Nanorods.” 2014. Doctoral Dissertation, NSYSU. Accessed March 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0618114-171135.

MLA Handbook (7th Edition):

Lin, Yuan-Ting. “Growth and Characterization of Diluted Magnetic Semiconductors GaMnN Thin Films and Nanorods.” 2014. Web. 29 Mar 2020.

Vancouver:

Lin Y. Growth and Characterization of Diluted Magnetic Semiconductors GaMnN Thin Films and Nanorods. [Internet] [Doctoral dissertation]. NSYSU; 2014. [cited 2020 Mar 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0618114-171135.

Council of Science Editors:

Lin Y. Growth and Characterization of Diluted Magnetic Semiconductors GaMnN Thin Films and Nanorods. [Doctoral Dissertation]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0618114-171135


NSYSU

30. Lin, Cheng-Wei. Molecular beam epitaxy of ZnO on nitridated LiAlO2 (100) and LiGaO2 (100) substrates.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 In this work, the influence of substrate nitridation on the subsequent growth of ZnO epilayers by plasma assisted molecular beam epitaxy (MBE) was studied. Two… (more)

Subjects/Keywords: substrate nitridation; LiAlO2; molecular beam epitaxy; LiGaO2; ZnO

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lin, C. (2014). Molecular beam epitaxy of ZnO on nitridated LiAlO2 (100) and LiGaO2 (100) substrates. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713114-195836

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Cheng-Wei. “Molecular beam epitaxy of ZnO on nitridated LiAlO2 (100) and LiGaO2 (100) substrates.” 2014. Thesis, NSYSU. Accessed March 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713114-195836.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Cheng-Wei. “Molecular beam epitaxy of ZnO on nitridated LiAlO2 (100) and LiGaO2 (100) substrates.” 2014. Web. 29 Mar 2020.

Vancouver:

Lin C. Molecular beam epitaxy of ZnO on nitridated LiAlO2 (100) and LiGaO2 (100) substrates. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Mar 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713114-195836.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin C. Molecular beam epitaxy of ZnO on nitridated LiAlO2 (100) and LiGaO2 (100) substrates. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713114-195836

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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