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You searched for subject:(Metal Organic Chemical Vapor Deposition MOCVD ). Showing records 1 – 30 of 63585 total matches.

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1. Soussi, Khaled. Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4.

Degree: Docteur es, Chimie, 2017, Lyon

 La production de polyéthylène par la polymérisation de l'éthylène est un procédé industriel de grande importance. L'éthylène, issue de la pétrochimie contient des impuretés d'acétylène… (more)

Subjects/Keywords: Al13Fe4; Triazidures; Metal organic chemical vapor deposition (MOCVD); Précurseurs; Nanoparticules; Al13Fe4; Metal organic chemical vapor deposition (MOCVD); Triazenides; Nanoparticles; Precursors; 541

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APA (6th Edition):

Soussi, K. (2017). Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSE1006

Chicago Manual of Style (16th Edition):

Soussi, Khaled. “Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4.” 2017. Doctoral Dissertation, Lyon. Accessed January 16, 2021. http://www.theses.fr/2017LYSE1006.

MLA Handbook (7th Edition):

Soussi, Khaled. “Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4.” 2017. Web. 16 Jan 2021.

Vancouver:

Soussi K. Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2017LYSE1006.

Council of Science Editors:

Soussi K. Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSE1006


Texas State University – San Marcos

2. Anderson, Jonathan W. Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure.

Degree: MS, Physics, 2014, Texas State University – San Marcos

 The group III-nitride family of semiconductor materials grown by metalorganic chemical vapor deposition (MOCVD) has had a dramatic impact on optoelectronics and high-frequency, high-power devices… (more)

Subjects/Keywords: MOCVD; AlGaInN; III-nitride; STEM; Metal organic chemical vapor deposition; Optoelectronics; Microtechnology

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APA (6th Edition):

Anderson, J. W. (2014). Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure. (Masters Thesis). Texas State University – San Marcos. Retrieved from https://digital.library.txstate.edu/handle/10877/5254

Chicago Manual of Style (16th Edition):

Anderson, Jonathan W. “Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure.” 2014. Masters Thesis, Texas State University – San Marcos. Accessed January 16, 2021. https://digital.library.txstate.edu/handle/10877/5254.

MLA Handbook (7th Edition):

Anderson, Jonathan W. “Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure.” 2014. Web. 16 Jan 2021.

Vancouver:

Anderson JW. Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure. [Internet] [Masters thesis]. Texas State University – San Marcos; 2014. [cited 2021 Jan 16]. Available from: https://digital.library.txstate.edu/handle/10877/5254.

Council of Science Editors:

Anderson JW. Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure. [Masters Thesis]. Texas State University – San Marcos; 2014. Available from: https://digital.library.txstate.edu/handle/10877/5254


Nelson Mandela Metropolitan University

3. Shamba, Precious. MOCVD growth and electrical characterisation of InAs thin films.

Degree: MSc, Faculty of Science, 2007, Nelson Mandela Metropolitan University

 In this work, a systematic study relating the surface morphologies, electrical and structural properties of both doped and undoped InAs and InAsSb epitaxial films grown… (more)

Subjects/Keywords: Metal organic chemical vapor deposition

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APA (6th Edition):

Shamba, P. (2007). MOCVD growth and electrical characterisation of InAs thin films. (Masters Thesis). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/706

Chicago Manual of Style (16th Edition):

Shamba, Precious. “MOCVD growth and electrical characterisation of InAs thin films.” 2007. Masters Thesis, Nelson Mandela Metropolitan University. Accessed January 16, 2021. http://hdl.handle.net/10948/706.

MLA Handbook (7th Edition):

Shamba, Precious. “MOCVD growth and electrical characterisation of InAs thin films.” 2007. Web. 16 Jan 2021.

Vancouver:

Shamba P. MOCVD growth and electrical characterisation of InAs thin films. [Internet] [Masters thesis]. Nelson Mandela Metropolitan University; 2007. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10948/706.

Council of Science Editors:

Shamba P. MOCVD growth and electrical characterisation of InAs thin films. [Masters Thesis]. Nelson Mandela Metropolitan University; 2007. Available from: http://hdl.handle.net/10948/706


Hong Kong University of Science and Technology

4. Lai, Billy ECE. Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si.

Degree: 2018, Hong Kong University of Science and Technology

 Optoelectronics operating at the mid-infrared wavelength have been increasingly common in a wide range of areas including the defense industry, the automotive industry, and even… (more)

Subjects/Keywords: Semiconductors ; Metal organic chemical vapor deposition ; Epitaxy

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APA (6th Edition):

Lai, B. E. (2018). Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-95901 ; https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lai, Billy ECE. “Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed January 16, 2021. http://repository.ust.hk/ir/Record/1783.1-95901 ; https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lai, Billy ECE. “Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si.” 2018. Web. 16 Jan 2021.

Vancouver:

Lai BE. Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2021 Jan 16]. Available from: http://repository.ust.hk/ir/Record/1783.1-95901 ; https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lai BE. Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: http://repository.ust.hk/ir/Record/1783.1-95901 ; https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rutgers University

5. Jumaah, Omar Dhannoon, 1983-. Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process.

Degree: PhD, Mechanical and Aerospace Engineering, 2019, Rutgers University

 Gallium nitride (GaN) thin film is an attractive material for manufacturing optoelectronic device applications due to its wide band-gap and superb optoelectronic performance. The reliability… (more)

Subjects/Keywords: Gallium nitride; Metal organic chemical vapor deposition

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APA (6th Edition):

Jumaah, Omar Dhannoon, 1. (2019). Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/61775/

Chicago Manual of Style (16th Edition):

Jumaah, Omar Dhannoon, 1983-. “Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process.” 2019. Doctoral Dissertation, Rutgers University. Accessed January 16, 2021. https://rucore.libraries.rutgers.edu/rutgers-lib/61775/.

MLA Handbook (7th Edition):

Jumaah, Omar Dhannoon, 1983-. “Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process.” 2019. Web. 16 Jan 2021.

Vancouver:

Jumaah, Omar Dhannoon 1. Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process. [Internet] [Doctoral dissertation]. Rutgers University; 2019. [cited 2021 Jan 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/61775/.

Council of Science Editors:

Jumaah, Omar Dhannoon 1. Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process. [Doctoral Dissertation]. Rutgers University; 2019. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/61775/


NSYSU

6. Weng, Tzu-Yu. Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes.

Degree: Master, Chemistry, 2003, NSYSU

Metal diketonato complexes are populate in recent ten years, because of diketone compound is easy to get and cheap and also have good volatility to… (more)

Subjects/Keywords: Metal diketonato complexes; Cis/Trans Geometry; Metal Organic Chemical Vapor Deposition; MOCVD

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APA (6th Edition):

Weng, T. (2003). Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Weng, Tzu-Yu. “Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes.” 2003. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Weng, Tzu-Yu. “Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes.” 2003. Web. 16 Jan 2021.

Vancouver:

Weng T. Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes. [Internet] [Thesis]. NSYSU; 2003. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Weng T. Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes. [Thesis]. NSYSU; 2003. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

7. Yaddanapudi, G R Krishna. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.

Degree: PhD, Faculty of Engineering, 2017, Indian Institute of Science

 Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting materials after Si and GaAs. The excellent optical and… (more)

Subjects/Keywords: Semiconductors; Nitrides; Gallium Nitride; N-Polar Gallium Nitride; Metal Organic Chemical Vapor Deposition (MOCVD); Galllium Nitride Growth; High Temperature Gallium Nitride; Low Temperature Gallium Nitride; GaN; Materials Engineering

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APA (6th Edition):

Yaddanapudi, G. R. K. (2017). Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2662

Chicago Manual of Style (16th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2017. Doctoral Dissertation, Indian Institute of Science. Accessed January 16, 2021. http://etd.iisc.ac.in/handle/2005/2662.

MLA Handbook (7th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2017. Web. 16 Jan 2021.

Vancouver:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2017. [cited 2021 Jan 16]. Available from: http://etd.iisc.ac.in/handle/2005/2662.

Council of Science Editors:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Doctoral Dissertation]. Indian Institute of Science; 2017. Available from: http://etd.iisc.ac.in/handle/2005/2662


Penn State University

8. Zhang, Xiaotian. METALORGANIC CHEMICAL VAPOR DEPOSITION OF TWO-DIMENSIONAL LAYERED CHALCOGENIDES.

Degree: 2019, Penn State University

 Two dimensional (2D) materials have attracted wide interest because of their layered crystal structures and anisotropic properties which leads to potential new diversity of function… (more)

Subjects/Keywords: Two-dimensional Materials; Transition Metal Dichalcogenides; 2D Layered Chalcogenides; Chemical Vapor Deposition; Metalorganic Chemical Vapor Deposition; Thin Film Deposition; 2D Materials; CVD; MOCVD; WSe2; In2Se3

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APA (6th Edition):

Zhang, X. (2019). METALORGANIC CHEMICAL VAPOR DEPOSITION OF TWO-DIMENSIONAL LAYERED CHALCOGENIDES. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/16678xwz5047

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Xiaotian. “METALORGANIC CHEMICAL VAPOR DEPOSITION OF TWO-DIMENSIONAL LAYERED CHALCOGENIDES.” 2019. Thesis, Penn State University. Accessed January 16, 2021. https://submit-etda.libraries.psu.edu/catalog/16678xwz5047.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Xiaotian. “METALORGANIC CHEMICAL VAPOR DEPOSITION OF TWO-DIMENSIONAL LAYERED CHALCOGENIDES.” 2019. Web. 16 Jan 2021.

Vancouver:

Zhang X. METALORGANIC CHEMICAL VAPOR DEPOSITION OF TWO-DIMENSIONAL LAYERED CHALCOGENIDES. [Internet] [Thesis]. Penn State University; 2019. [cited 2021 Jan 16]. Available from: https://submit-etda.libraries.psu.edu/catalog/16678xwz5047.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang X. METALORGANIC CHEMICAL VAPOR DEPOSITION OF TWO-DIMENSIONAL LAYERED CHALCOGENIDES. [Thesis]. Penn State University; 2019. Available from: https://submit-etda.libraries.psu.edu/catalog/16678xwz5047

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rutgers University

9. Meng, Jiandong, 1983-. Simulation and optimization of the GaN MOCVD process.

Degree: PhD, Mechanical and Aerospace Engineering, 2014, Rutgers University

A detailed mathematical model for the growth of gallium nitride (GaN) in metalorganic chemical vapor deposition (MOCVD) process is developed, and the complete chemical mechanism… (more)

Subjects/Keywords: Gallium nitride; Metal organic chemical vapor deposition; Mathematical models

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APA (6th Edition):

Meng, Jiandong, 1. (2014). Simulation and optimization of the GaN MOCVD process. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/45362/

Chicago Manual of Style (16th Edition):

Meng, Jiandong, 1983-. “Simulation and optimization of the GaN MOCVD process.” 2014. Doctoral Dissertation, Rutgers University. Accessed January 16, 2021. https://rucore.libraries.rutgers.edu/rutgers-lib/45362/.

MLA Handbook (7th Edition):

Meng, Jiandong, 1983-. “Simulation and optimization of the GaN MOCVD process.” 2014. Web. 16 Jan 2021.

Vancouver:

Meng, Jiandong 1. Simulation and optimization of the GaN MOCVD process. [Internet] [Doctoral dissertation]. Rutgers University; 2014. [cited 2021 Jan 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/45362/.

Council of Science Editors:

Meng, Jiandong 1. Simulation and optimization of the GaN MOCVD process. [Doctoral Dissertation]. Rutgers University; 2014. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/45362/


University of Illinois – Urbana-Champaign

10. Bassett, Kevin P. Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control.

Degree: MS, 1200, 2010, University of Illinois – Urbana-Champaign

 Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound… (more)

Subjects/Keywords: Metal-organic chemical vapor deposition (MOCVD); Organometallic vapor phase epitaxy (OMVPE); Metalorganic vapour phase epitaxy (MOVPE)

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APA (6th Edition):

Bassett, K. P. (2010). Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/14733

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bassett, Kevin P. “Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control.” 2010. Thesis, University of Illinois – Urbana-Champaign. Accessed January 16, 2021. http://hdl.handle.net/2142/14733.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bassett, Kevin P. “Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control.” 2010. Web. 16 Jan 2021.

Vancouver:

Bassett KP. Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2010. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2142/14733.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bassett KP. Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control. [Thesis]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/14733

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

11. Li, Qiang. Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD.

Degree: 2014, Hong Kong University of Science and Technology

 After more than 40 years’ transistor scaling, Si CMOS technology has enabled state-of-the-art microprocessors with large-volume, low-cost production and high-level integration. Meanwhile, InP based transistor… (more)

Subjects/Keywords: Indium phosphide ; Inhomogeneous materials ; Metal organic chemical vapor deposition ; Metal oxide semiconductor field-effect transistors

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APA (6th Edition):

Li, Q. (2014). Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-92029 ; https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Qiang. “Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed January 16, 2021. http://repository.ust.hk/ir/Record/1783.1-92029 ; https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Qiang. “Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD.” 2014. Web. 16 Jan 2021.

Vancouver:

Li Q. Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2021 Jan 16]. Available from: http://repository.ust.hk/ir/Record/1783.1-92029 ; https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li Q. Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: http://repository.ust.hk/ir/Record/1783.1-92029 ; https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

12. Ganesh V. Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals.

Degree: Physics, 2013, Anna University

Semiconductors such as group III-nitrides are playing important role in optoelectronic devices especially blue-green light emitting diodes (LED s), short wavelength laser diodes (LD s)… (more)

Subjects/Keywords: Semiconductor; Physics; Light emitting diodes; Laser diodes; Metal-organic chemical vapor deposition

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APA (6th Edition):

V, G. (2013). Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/9921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

V, Ganesh. “Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals.” 2013. Thesis, Anna University. Accessed January 16, 2021. http://shodhganga.inflibnet.ac.in/handle/10603/9921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

V, Ganesh. “Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals.” 2013. Web. 16 Jan 2021.

Vancouver:

V G. Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals. [Internet] [Thesis]. Anna University; 2013. [cited 2021 Jan 16]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/9921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

V G. Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals. [Thesis]. Anna University; 2013. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/9921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Stellenbosch University

13. Sikiti, Phumile. Flexible Co(II) Metal-Organic Frameworks with Mixed Ligands under Controlled Pressure.

Degree: PhD, 2019, Stellenbosch University

ENGLISH ABSTRACT: A number of flexible metal-organic frameworks (MOFs) are shown to undergo phase changes under CO2 gas pressure and, in two cases, the mechanisms… (more)

Subjects/Keywords: Metal organic chemical vapor deposition; UCTD; Ligands; Crystal fibers  – Diffraction; Crystalline polymers

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APA (6th Edition):

Sikiti, P. (2019). Flexible Co(II) Metal-Organic Frameworks with Mixed Ligands under Controlled Pressure. (Doctoral Dissertation). Stellenbosch University. Retrieved from http://hdl.handle.net/10019.1/107068

Chicago Manual of Style (16th Edition):

Sikiti, Phumile. “Flexible Co(II) Metal-Organic Frameworks with Mixed Ligands under Controlled Pressure.” 2019. Doctoral Dissertation, Stellenbosch University. Accessed January 16, 2021. http://hdl.handle.net/10019.1/107068.

MLA Handbook (7th Edition):

Sikiti, Phumile. “Flexible Co(II) Metal-Organic Frameworks with Mixed Ligands under Controlled Pressure.” 2019. Web. 16 Jan 2021.

Vancouver:

Sikiti P. Flexible Co(II) Metal-Organic Frameworks with Mixed Ligands under Controlled Pressure. [Internet] [Doctoral dissertation]. Stellenbosch University; 2019. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10019.1/107068.

Council of Science Editors:

Sikiti P. Flexible Co(II) Metal-Organic Frameworks with Mixed Ligands under Controlled Pressure. [Doctoral Dissertation]. Stellenbosch University; 2019. Available from: http://hdl.handle.net/10019.1/107068


North Carolina State University

14. Lai, Kun-Yu Alvin. InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

 Nonpolar (m-plane or a-plane) gallium nitride (GaN) is predicted to be a potential substrate material to improve luminous efficiencies of nitride-based quantum wells (QWs). Numerical… (more)

Subjects/Keywords: GaN; InGaN; quantum well; metal-organic chemical vapor deposition; quantum dot; light emitting diode

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APA (6th Edition):

Lai, K. A. (2009). InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5610

Chicago Manual of Style (16th Edition):

Lai, Kun-Yu Alvin. “InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates.” 2009. Doctoral Dissertation, North Carolina State University. Accessed January 16, 2021. http://www.lib.ncsu.edu/resolver/1840.16/5610.

MLA Handbook (7th Edition):

Lai, Kun-Yu Alvin. “InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates.” 2009. Web. 16 Jan 2021.

Vancouver:

Lai KA. InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2021 Jan 16]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5610.

Council of Science Editors:

Lai KA. InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5610


Hong Kong University of Science and Technology

15. Ma, Jun ECE. Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs.

Degree: 2014, Hong Kong University of Science and Technology

 III-nitrides are one of the most important semiconductors since silicon, offering high-carrier saturation velocity, high breakdown field strength and hence enormous opportunities in RF/power electronics.… (more)

Subjects/Keywords: Gallium nitride ; Metal organic chemical vapor deposition ; Modulation-doped field-effect transistors ; Light emitting diodes

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APA (6th Edition):

Ma, J. E. (2014). Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-92613 ; https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ma, Jun ECE. “Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed January 16, 2021. http://repository.ust.hk/ir/Record/1783.1-92613 ; https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ma, Jun ECE. “Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs.” 2014. Web. 16 Jan 2021.

Vancouver:

Ma JE. Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2021 Jan 16]. Available from: http://repository.ust.hk/ir/Record/1783.1-92613 ; https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ma JE. Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: http://repository.ust.hk/ir/Record/1783.1-92613 ; https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

16. Choi, Wonsik. Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy.

Degree: MS, Electrical & Computer Engineering, 2015, University of Illinois – Urbana-Champaign

 Realizing lateral p-n junction is a critical technique to fabricate electronic and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin… (more)

Subjects/Keywords: selective lateral epitaxy (SLE); semiconductor nanowires (SNWs); metal -organic chemical vapor deposition (MOCVD)

…growth is the vapor-liquid-solid (VLS) mechanism using metal-organic chemical vapor… …deposition (MOCVD) which can easily realize heterostructure NWs and control the doping… …metal particles and the wafer. The Au seeds-deposited samples were placed into the MOCVD… …Another doping pathway is through vapor-solid (VS) deposition: vapor phase dopants do… …lithography and metal deposition processes will be performed to form source, drain and gate metal… 

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APA (6th Edition):

Choi, W. (2015). Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/88102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Choi, Wonsik. “Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy.” 2015. Thesis, University of Illinois – Urbana-Champaign. Accessed January 16, 2021. http://hdl.handle.net/2142/88102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Choi, Wonsik. “Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy.” 2015. Web. 16 Jan 2021.

Vancouver:

Choi W. Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2015. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2142/88102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Choi W. Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy. [Thesis]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/88102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


The Ohio State University

17. Boeckl, John J. Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates.

Degree: PhD, Electrical Engineering, 2005, The Ohio State University

 In this dissertation we report on the structural quality of the GaAs/Ge interface for GaAs nucleation by solid source molecular beam epitaxy (MBE). Through feedback… (more)

Subjects/Keywords: molecular beam epitaxy; MBE; metal organic chemical vapor deposition; MOCVD; electron beam induced current; EBIC; defects; transmission electron microscopy; TEM

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APA (6th Edition):

Boeckl, J. J. (2005). Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970

Chicago Manual of Style (16th Edition):

Boeckl, John J. “Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates.” 2005. Doctoral Dissertation, The Ohio State University. Accessed January 16, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970.

MLA Handbook (7th Edition):

Boeckl, John J. “Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates.” 2005. Web. 16 Jan 2021.

Vancouver:

Boeckl JJ. Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates. [Internet] [Doctoral dissertation]. The Ohio State University; 2005. [cited 2021 Jan 16]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970.

Council of Science Editors:

Boeckl JJ. Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates. [Doctoral Dissertation]. The Ohio State University; 2005. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970


Drexel University

18. Chen, Zizhao. The effect of metal halides on MoS2 growth by chemical vapor deposition.

Degree: 2018, Drexel University

Two-dimensional (2D) materials are materials in which the crystal structure is arranged only along two dimensions. The first 2D material to be fabricated was graphene,… (more)

Subjects/Keywords: Materials science; Metal halides; Chemical vapor deposition

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APA (6th Edition):

Chen, Z. (2018). The effect of metal halides on MoS2 growth by chemical vapor deposition. (Thesis). Drexel University. Retrieved from https://idea.library.drexel.edu/islandora/object/idea%3A8238

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Zizhao. “The effect of metal halides on MoS2 growth by chemical vapor deposition.” 2018. Thesis, Drexel University. Accessed January 16, 2021. https://idea.library.drexel.edu/islandora/object/idea%3A8238.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Zizhao. “The effect of metal halides on MoS2 growth by chemical vapor deposition.” 2018. Web. 16 Jan 2021.

Vancouver:

Chen Z. The effect of metal halides on MoS2 growth by chemical vapor deposition. [Internet] [Thesis]. Drexel University; 2018. [cited 2021 Jan 16]. Available from: https://idea.library.drexel.edu/islandora/object/idea%3A8238.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Z. The effect of metal halides on MoS2 growth by chemical vapor deposition. [Thesis]. Drexel University; 2018. Available from: https://idea.library.drexel.edu/islandora/object/idea%3A8238

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Washington State University

19. [No author]. Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers .

Degree: 2003, Washington State University

Subjects/Keywords: Plasma-enhanced chemical vapor deposition.; Fuel cells.; Metal organic chemical vapor deposition.

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APA (6th Edition):

author], [. (2003). Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers . (Thesis). Washington State University. Retrieved from http://hdl.handle.net/2376/158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

author], [No. “Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers .” 2003. Thesis, Washington State University. Accessed January 16, 2021. http://hdl.handle.net/2376/158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

author], [No. “Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers .” 2003. Web. 16 Jan 2021.

Vancouver:

author] [. Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers . [Internet] [Thesis]. Washington State University; 2003. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2376/158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

author] [. Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers . [Thesis]. Washington State University; 2003. Available from: http://hdl.handle.net/2376/158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

20. Kesler, Benjamin. Antimonide-based type-II superlattices for infrared detection.

Degree: MS, 1200, 2012, University of Illinois – Urbana-Champaign

 The vast array of applications for the detection of mid- to long-wave infrared radiation has spurred continuous interest in new and novel technologies to replace… (more)

Subjects/Keywords: Detector; infrared; infrared detection; type-II superlattice (T2SL); metalorganic chemical vapor deposition (MOCVD)

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APA (6th Edition):

Kesler, B. (2012). Antimonide-based type-II superlattices for infrared detection. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/34523

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kesler, Benjamin. “Antimonide-based type-II superlattices for infrared detection.” 2012. Thesis, University of Illinois – Urbana-Champaign. Accessed January 16, 2021. http://hdl.handle.net/2142/34523.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kesler, Benjamin. “Antimonide-based type-II superlattices for infrared detection.” 2012. Web. 16 Jan 2021.

Vancouver:

Kesler B. Antimonide-based type-II superlattices for infrared detection. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2012. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2142/34523.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kesler B. Antimonide-based type-II superlattices for infrared detection. [Thesis]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/34523

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Lu, Yun. III-V compound semiconductor selective area epitaxy on silicon substrates.

Degree: MS, 1200, 2014, University of Illinois – Urbana-Champaign

 In electronics, the integration of III-V compound semiconductor materials and silicon is a way to solve the silicon feature size limit and power consumption problems… (more)

Subjects/Keywords: selective area epitaxy; III-V material; silicon substrate; monolithic device; Metal organic chemical vapor deposition (MOCVD); Molecular beam epitaxy (MBE)

…surface metal contaminants can be suppressed to negligible levels by proper chemical treatments… …from pure Si to pure Ge. The growth was carried out in an ultra-high vacuum chemical vapor… …and the potential of using optical links to replace the metal interconnection in VLSI drive… …deposition on the masked region during the epitaxial growth. Epitaxial layers locally grow on the… …published a paper on selective MOCVD growth of compound semiconductor on Si Substrates [12… 

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APA (6th Edition):

Lu, Y. (2014). III-V compound semiconductor selective area epitaxy on silicon substrates. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/49642

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, Yun. “III-V compound semiconductor selective area epitaxy on silicon substrates.” 2014. Thesis, University of Illinois – Urbana-Champaign. Accessed January 16, 2021. http://hdl.handle.net/2142/49642.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, Yun. “III-V compound semiconductor selective area epitaxy on silicon substrates.” 2014. Web. 16 Jan 2021.

Vancouver:

Lu Y. III-V compound semiconductor selective area epitaxy on silicon substrates. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2014. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2142/49642.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu Y. III-V compound semiconductor selective area epitaxy on silicon substrates. [Thesis]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/49642

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

22. Norris, Kate Jeanne. Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices.

Degree: Electrical Engineering, 2015, University of California – Santa Cruz

 In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From… (more)

Subjects/Keywords: Materials Science; Electrical engineering; Metal Organic Chemical Vapor Deposition; Resistive switching devices; Thermoelectric devices; Transmission Electron Microscopy

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APA (6th Edition):

Norris, K. J. (2015). Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices. (Thesis). University of California – Santa Cruz. Retrieved from http://www.escholarship.org/uc/item/3b20674g

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Norris, Kate Jeanne. “Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices.” 2015. Thesis, University of California – Santa Cruz. Accessed January 16, 2021. http://www.escholarship.org/uc/item/3b20674g.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Norris, Kate Jeanne. “Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices.” 2015. Web. 16 Jan 2021.

Vancouver:

Norris KJ. Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices. [Internet] [Thesis]. University of California – Santa Cruz; 2015. [cited 2021 Jan 16]. Available from: http://www.escholarship.org/uc/item/3b20674g.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Norris KJ. Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices. [Thesis]. University of California – Santa Cruz; 2015. Available from: http://www.escholarship.org/uc/item/3b20674g

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

23. Pagni, Olivier Demeno. On the mocvd growth of ZnO.

Degree: Faculty of Science, 2004, University of Port Elizabeth

 Zinc oxide (ZnO) is a II-VI semiconductor material that offers tremendous potential as a light emitter in the blue-to-UV range. It has a wurtzite structure,… (more)

Subjects/Keywords: Zinc oxide thin films; Metal organic chemical vapor deposition

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APA (6th Edition):

Pagni, O. D. (2004). On the mocvd growth of ZnO. (Thesis). University of Port Elizabeth. Retrieved from http://hdl.handle.net/10948/382

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pagni, Olivier Demeno. “On the mocvd growth of ZnO.” 2004. Thesis, University of Port Elizabeth. Accessed January 16, 2021. http://hdl.handle.net/10948/382.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pagni, Olivier Demeno. “On the mocvd growth of ZnO.” 2004. Web. 16 Jan 2021.

Vancouver:

Pagni OD. On the mocvd growth of ZnO. [Internet] [Thesis]. University of Port Elizabeth; 2004. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10948/382.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pagni OD. On the mocvd growth of ZnO. [Thesis]. University of Port Elizabeth; 2004. Available from: http://hdl.handle.net/10948/382

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Nelson Mandela Metropolitan University

24. Miya, Senzo Simo. Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices.

Degree: PhD, Faculty of Science, 2013, Nelson Mandela Metropolitan University

 The importance of infrared (IR) technology (for detection in the 3-5 μm and 8-14 μm atmospheric windows) has spread from military applications to civilian applications… (more)

Subjects/Keywords: Gallium arsenide semiconductors; Organometallic compounds; Compound semiconductors; Metal organic chemical vapor deposition; Superlattices as materials; Epitaxy

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APA (6th Edition):

Miya, S. S. (2013). Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices. (Doctoral Dissertation). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/d1020866

Chicago Manual of Style (16th Edition):

Miya, Senzo Simo. “Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices.” 2013. Doctoral Dissertation, Nelson Mandela Metropolitan University. Accessed January 16, 2021. http://hdl.handle.net/10948/d1020866.

MLA Handbook (7th Edition):

Miya, Senzo Simo. “Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices.” 2013. Web. 16 Jan 2021.

Vancouver:

Miya SS. Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices. [Internet] [Doctoral dissertation]. Nelson Mandela Metropolitan University; 2013. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10948/d1020866.

Council of Science Editors:

Miya SS. Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices. [Doctoral Dissertation]. Nelson Mandela Metropolitan University; 2013. Available from: http://hdl.handle.net/10948/d1020866


Rutgers University

25. Zhang, Jingming. Design and synthesis of metal organic frameworks for CO₂ separation and catalysis.

Degree: Chemistry and Chemical Biology, 2013, Rutgers University

Subjects/Keywords: Carbon dioxide mitigation; Metal organic chemical vapor deposition

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APA (6th Edition):

Zhang, J. (2013). Design and synthesis of metal organic frameworks for CO₂ separation and catalysis. (Thesis). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/42094/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Jingming. “Design and synthesis of metal organic frameworks for CO₂ separation and catalysis.” 2013. Thesis, Rutgers University. Accessed January 16, 2021. https://rucore.libraries.rutgers.edu/rutgers-lib/42094/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Jingming. “Design and synthesis of metal organic frameworks for CO₂ separation and catalysis.” 2013. Web. 16 Jan 2021.

Vancouver:

Zhang J. Design and synthesis of metal organic frameworks for CO₂ separation and catalysis. [Internet] [Thesis]. Rutgers University; 2013. [cited 2021 Jan 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/42094/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang J. Design and synthesis of metal organic frameworks for CO₂ separation and catalysis. [Thesis]. Rutgers University; 2013. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/42094/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

26. Jena, Anirudha. Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications.

Degree: PhD, Faculty of Science, 2018, Indian Institute of Science

Subjects/Keywords: Transition Metal Oxides; Metalorganic Chemical Vapor Deposition (MOCVD); Metal Oxide/Composite Nanostructures; Nanomaterials; Nanostructured Transition Metal Oxides - Synthesis; Cobalt Oxide Nanostructures; Nanostructured Titanium Dioxide; Cobalt Oxide Thin Films; Nickel Oxide/Nanocomposites; Metal-organic Complexes; Nanotechnology

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APA (6th Edition):

Jena, A. (2018). Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/3233

Chicago Manual of Style (16th Edition):

Jena, Anirudha. “Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications.” 2018. Doctoral Dissertation, Indian Institute of Science. Accessed January 16, 2021. http://etd.iisc.ac.in/handle/2005/3233.

MLA Handbook (7th Edition):

Jena, Anirudha. “Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications.” 2018. Web. 16 Jan 2021.

Vancouver:

Jena A. Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2018. [cited 2021 Jan 16]. Available from: http://etd.iisc.ac.in/handle/2005/3233.

Council of Science Editors:

Jena A. Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications. [Doctoral Dissertation]. Indian Institute of Science; 2018. Available from: http://etd.iisc.ac.in/handle/2005/3233


Harvard University

27. Tong, Liuchuan. Development of Organic Molecules for Aqueous Redox Flow Battery.

Degree: PhD, 2018, Harvard University

The cost of renewable energy sources such as solar and wind has dropped significantly such that the main barrier for a wider adoption is intermittency.… (more)

Subjects/Keywords: Flow Battery; Organic molecules; Chemical Vapor Deposition; Organic Redox Flow Battery

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APA (6th Edition):

Tong, L. (2018). Development of Organic Molecules for Aqueous Redox Flow Battery. (Doctoral Dissertation). Harvard University. Retrieved from http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182

Chicago Manual of Style (16th Edition):

Tong, Liuchuan. “Development of Organic Molecules for Aqueous Redox Flow Battery.” 2018. Doctoral Dissertation, Harvard University. Accessed January 16, 2021. http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182.

MLA Handbook (7th Edition):

Tong, Liuchuan. “Development of Organic Molecules for Aqueous Redox Flow Battery.” 2018. Web. 16 Jan 2021.

Vancouver:

Tong L. Development of Organic Molecules for Aqueous Redox Flow Battery. [Internet] [Doctoral dissertation]. Harvard University; 2018. [cited 2021 Jan 16]. Available from: http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182.

Council of Science Editors:

Tong L. Development of Organic Molecules for Aqueous Redox Flow Battery. [Doctoral Dissertation]. Harvard University; 2018. Available from: http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182


Indian Institute of Science

28. Ail, Ujwala. Thin Film Semiconducting Metal Oxides By Nebulized Spray Pyrolysis And MOCVD, For Gas-Sensing Applications.

Degree: PhD, Faculty of Science, 2013, Indian Institute of Science

 The atmosphere we live in contains various kinds of chemical species, natural and artificial, some of which are vital to our life, while many others… (more)

Subjects/Keywords: Metalorganic Chemical Vapor Deposition (MOCVD); Nebulized Spray Pyrolysis; Thin Films; Gas Sensors; Metal Oxide Gas Sensors; Zinc Oxide Thin Films; Thin Film Deposition; Zno Thin Films; Zinc Oxide Thin Films; Vanadium Oxide; Materials Science

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APA (6th Edition):

Ail, U. (2013). Thin Film Semiconducting Metal Oxides By Nebulized Spray Pyrolysis And MOCVD, For Gas-Sensing Applications. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/1970

Chicago Manual of Style (16th Edition):

Ail, Ujwala. “Thin Film Semiconducting Metal Oxides By Nebulized Spray Pyrolysis And MOCVD, For Gas-Sensing Applications.” 2013. Doctoral Dissertation, Indian Institute of Science. Accessed January 16, 2021. http://etd.iisc.ac.in/handle/2005/1970.

MLA Handbook (7th Edition):

Ail, Ujwala. “Thin Film Semiconducting Metal Oxides By Nebulized Spray Pyrolysis And MOCVD, For Gas-Sensing Applications.” 2013. Web. 16 Jan 2021.

Vancouver:

Ail U. Thin Film Semiconducting Metal Oxides By Nebulized Spray Pyrolysis And MOCVD, For Gas-Sensing Applications. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2013. [cited 2021 Jan 16]. Available from: http://etd.iisc.ac.in/handle/2005/1970.

Council of Science Editors:

Ail U. Thin Film Semiconducting Metal Oxides By Nebulized Spray Pyrolysis And MOCVD, For Gas-Sensing Applications. [Doctoral Dissertation]. Indian Institute of Science; 2013. Available from: http://etd.iisc.ac.in/handle/2005/1970


University of Texas – Austin

29. Liao, Wen. Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition.

Degree: PhD, Chemical engineering, 2016, University of Texas – Austin

 As feature sizes in microelectronic devices decrease, ultra-thin (< 3 nm) and smooth diffusion barriers are required to prevent copper from diffusing into the surrounding… (more)

Subjects/Keywords: Chemical vapor deposition; Ruthenium; Nucleation; Ultra-thin metal film

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APA (6th Edition):

Liao, W. (2016). Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/39740

Chicago Manual of Style (16th Edition):

Liao, Wen. “Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition.” 2016. Doctoral Dissertation, University of Texas – Austin. Accessed January 16, 2021. http://hdl.handle.net/2152/39740.

MLA Handbook (7th Edition):

Liao, Wen. “Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition.” 2016. Web. 16 Jan 2021.

Vancouver:

Liao W. Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2016. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2152/39740.

Council of Science Editors:

Liao W. Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition. [Doctoral Dissertation]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/39740


Indian Institute of Science

30. Gairola, Anshita. Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics.

Degree: PhD, Faculty of Science, 2013, Indian Institute of Science

 The work carried out as a part of this thesis has been focussed on understanding different aspects of the chemical vapor deposition process namely, ALD… (more)

Subjects/Keywords: Chemical Vapor Deposition (CVD); Dielectrics; Thin Films; Atomic Layer Deposition (ALD); Titanium Oxide Thin Films; Metalorganic Chemical Vapor Deposition; Metaloxide Thin Films; Thin Film Deposition; Physical Vapor Deposition (PVD); Titanium Oxide; Titanium Dioxide Film; MOCVD; Materials Science

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APA (6th Edition):

Gairola, A. (2013). Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2104

Chicago Manual of Style (16th Edition):

Gairola, Anshita. “Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics.” 2013. Doctoral Dissertation, Indian Institute of Science. Accessed January 16, 2021. http://etd.iisc.ac.in/handle/2005/2104.

MLA Handbook (7th Edition):

Gairola, Anshita. “Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics.” 2013. Web. 16 Jan 2021.

Vancouver:

Gairola A. Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2013. [cited 2021 Jan 16]. Available from: http://etd.iisc.ac.in/handle/2005/2104.

Council of Science Editors:

Gairola A. Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics. [Doctoral Dissertation]. Indian Institute of Science; 2013. Available from: http://etd.iisc.ac.in/handle/2005/2104

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