subject:(Metal Organic Chemical Vapor Deposition MOCVD )

1. Soussi, Khaled. Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4.

Degree: Docteur es, Chimie, 2017, Lyon

URL: http://www.theses.fr/2017LYSE1006

► La production de polyéthylène par la polymérisation de l'éthylène est un procédé industriel de grande importance. L'éthylène, issue de la pétrochimie contient des impuretés d'acétylène… (more)

▼ La production de polyéthylène par la polymérisation de l'éthylène est un procédé industriel de grande importance. L'éthylène, issue de la pétrochimie contient des impuretés d'acétylène (1%), ce qui empoisonne le catalyseur de polymérisation, et donc le besoin d'un catalyseur qui soit sélectif pour hydrogéner l'acétylène en éthylène. Le composé intermétallique Al13Fe4 a été développé par Armbuster et al. en 2012 comme un catalyseur actif et sélectif pour la semi-hydrogénation de l'acétylène pour la production de polyéthylène. Il présente une structure cristalline avec des distances interatomiques Fe-Fe élevées et un faible nombre de coordination des atomes de fer, qui tombe sous le concept de "site isolation principle". Ce composé est également intéressant en raison de son faible coût (sans métaux nobles par rapport à Pd /Al2O3 catalyseurs industriels) et une faible toxicité. Cependant, il a été produit sous la forme de poudre non supportée par la méthode Czochralski ce qui limite son utilisation dans le domaine du génie catalytique. Dans ce contexte, supporter le catalyseur présente de nombreux avantages comme la facilité de séparation du catalyseur hétérogène à partir du mélange réactionnel obtenue par une variété de procédés telle que la filtration par exemple. Un autre avantage des catalyseurs supportés est la plus grande surface exposée du catalyseur ou dispersion. Etant donné que la catalyse est une réaction de surface, maximiser la surface d'un catalyseur, en le dispersant sur le support améliorera / optimisera l'activité catalytique. Les procédés de "chimie douce" dénommés Metal Organic Chemical Vapor Deposition (MOCVD) et Metal Organic Deposition (MOD) sont réputés pour être efficaces et économiquement compétitifs pour déposer des nanoparticules ou des films minces, à partir de précurseurs moléculaires appropriés. Notre travail vise donc à développer Al13Fe4 sous forme de films ou de nanoparticules supportées par MOCVD. La première étape pour atteindre cet objectif est le développement des précurseurs moléculaires d'aluminium métallique et de fer, dans des conditions compatibles suivies par codépôt ou dépôt séquentiel des deux précurseurs de Fe et Al pour former le composé intermétallique dans la bonne stœchiométrie. Parmi les nombreux précurseurs d'Al, le diméthyl ethylaminealane (DMEAA, [AlH3(NMe2Et)]) est utilisé en raison de sa pression de vapeur importante et des températures de dépôt faibles. En outre, l'absence de liaisons Al-O et Al-C conduit à la production de films sans impuretés carbone et oxygène. Cependant, des précurseurs moléculaires de fer pour le dépôt pour MOCVD de films de fer purs sont rares et moins développés. En dehors du pentacarbonyle de fer qui produit des films de fer pur, amidinates et guanidinates sont utilisés comme précurseurs de fer. Cependant, l'oxygène et des carbures sont présents dans des pourcentages élevés. Ainsi, l'objectif principal de ce travail de thèse est de concevoir et de synthétiser de nouveaux complexes moléculaires de fer qui servent de précurseurs pour la… Advisors/Committee Members: Daniele, Stéphane (thesis director), Mishra, Shashank (thesis director).

Subjects/Keywords: Al13Fe4; Triazidures; Metal organic chemical vapor deposition (MOCVD); Précurseurs; Nanoparticules; Al13Fe4; Metal organic chemical vapor deposition (MOCVD); Triazenides; Nanoparticles; Precursors; 541

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APA (6^th Edition):

Soussi, K. (2017). Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSE1006

Chicago Manual of Style (16^th Edition):

Soussi, Khaled. “Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4.” 2017. Doctoral Dissertation, Lyon. Accessed January 16, 2021. http://www.theses.fr/2017LYSE1006.

MLA Handbook (7^th Edition):

Soussi, Khaled. “Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4.” 2017. Web. 16 Jan 2021.

Vancouver:

Soussi K. Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2017LYSE1006.

Council of Science Editors:

Soussi K. Precursor chemistry of novel metal triazenides : Solution and vapor phase elaborations of Fe and Al13Fe4 nanomaterials : Chimie des précurseurs de nouveaux triazinures métalliques : élaborations en solution et en phase gazeuse de nanomatériaux de Fe et Al13Fe4. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSE1006

Texas State University – San Marcos

2. Anderson, Jonathan W. Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure.

Degree: MS, Physics, 2014, Texas State University – San Marcos

URL: https://digital.library.txstate.edu/handle/10877/5254

► The group III-nitride family of semiconductor materials grown by metalorganic chemical vapor deposition (MOCVD) has had a dramatic impact on optoelectronics and high-frequency, high-power devices… (more)

▼ The group III-nitride family of semiconductor materials grown by metalorganic chemical vapor deposition (MOCVD) has had a dramatic impact on optoelectronics and high-frequency, high-power devices in recent years. The nitrides possess wide, direct transition band gaps ranging from 6.2 eV for AlN to 3.4 eV for GaN to 0.9 eV for InN which has allowed the development of LEDs and laser diodes in the blue and UV spectrum. Furthermore, the band gap, combined with a high electron saturation velocity and the piezoelectric properties of the (AlGaIn)N/GaN interface allow for the formation of a two-dimensional electron gas which can be utilized to produce high electron mobility transistors (HEMTs). To date most research has focused on AlGaN/GaN heterostructures, which have proven extremely useful for HEMTs but less than ideal for UV LEDs. The quaternary AlGaInN has emerged as an alternative to AlGaN that promises to further enhance HEMT performance and produce better quality UV LEDs. However, the addition of In to the alloy can be problematic because it is not completely soluble and tends to form clusters through spinodal decomposition. Studies of phase separation in AlGaInN have been made, but have focused on films composed mostly of Ga. Recently, HEMTs made using a high Al content AlGaInN layer have shown comparable performance to devices made using AlGaN, but no studies of phase separation have been done on these high Al content films. In this thesis, the installation of a MOCVD reactor at Texas State University and the modifications necessary to make it operational will be presented. Furthermore, the progress made in developing of processes to deposit A1GaN/GaN heterostructures will also be discussed. Finally, evidence of phase separation by spinodal decomposition in a sample of high aluminum content A1GaInN, provided by IQE, from a study by scanning transmission electron microscopy in collaboration with the Yacaman group at the University of Texas at San Antonio will be presented, and the results discussed within the context of the regular solution model. Advisors/Committee Members: Piner, Edwin L. (advisor), Donnelly, David (committee member), Holtz, Mark W. (committee member).

Subjects/Keywords: MOCVD; AlGaInN; III-nitride; STEM; Metal organic chemical vapor deposition; Optoelectronics; Microtechnology

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APA (6^th Edition):

Anderson, J. W. (2014). Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure. (Masters Thesis). Texas State University – San Marcos. Retrieved from https://digital.library.txstate.edu/handle/10877/5254

Chicago Manual of Style (16^th Edition):

Anderson, Jonathan W. “Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure.” 2014. Masters Thesis, Texas State University – San Marcos. Accessed January 16, 2021. https://digital.library.txstate.edu/handle/10877/5254.

MLA Handbook (7^th Edition):

Anderson, Jonathan W. “Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure.” 2014. Web. 16 Jan 2021.

Vancouver:

Anderson JW. Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure. [Internet] [Masters thesis]. Texas State University – San Marcos; 2014. [cited 2021 Jan 16]. Available from: https://digital.library.txstate.edu/handle/10877/5254.

Council of Science Editors:

Anderson JW. Metalorganic Chemical Vapor Deposition and Investigation of AlGaInN Microstructure. [Masters Thesis]. Texas State University – San Marcos; 2014. Available from: https://digital.library.txstate.edu/handle/10877/5254

Nelson Mandela Metropolitan University

3. Shamba, Precious. MOCVD growth and electrical characterisation of InAs thin films.

Degree: MSc, Faculty of Science, 2007, Nelson Mandela Metropolitan University

URL: http://hdl.handle.net/10948/706

► In this work, a systematic study relating the surface morphologies, electrical and structural properties of both doped and undoped InAs and InAsSb epitaxial films grown… (more)

▼ In this work, a systematic study relating the surface morphologies, electrical and structural properties of both doped and undoped InAs and InAsSb epitaxial films grown by metalorganic chemical vapour deposition (MOCVD) was undertaken. A comparative study using TBAs and AsH3 as the group V source in the growth of InAs revealed a considerable improvement, primarily in the electrical properties of InAs grown using TBAs with no significant difference in the surface morphology. InAs layers grown using TBAs, exhibited superior 77 K mobilities of up to 46 000 cm2/Vs, exceeding the best MOCVD data to date. The feasibility of tetraethyl tin (TESn) as an n-type dopant in InAs was to our knowledge investigated for the first time. The incorporation efficiency of this dopant was extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that the doping efficiency is temperature dependent and is not influenced by a variation of the V/III ratio or substrate orientation. Furthermore, Sn doping concentrations could be controlled over 2 orders of magnitude ranging between 2.7 x 1017 and 4.7 x 1019 cm-3 with 77 K mobilities ranging from 12 000 to 1300 cm2/Vs. The electrical properties of zinc doped InAs employing dimethyl zinc (DMZn) as the ptype dopant, were studied as a function of V/III ratio and substrate orientation. The effect of a variation of these parameters on the structural properties and surface morphology of InAs is also reported. The substrate orientation appears to have no influence on the Zn incorporation. An increase in Zn incorporation resulted in a deterioration of both the surface morphology and structural quality of the InAs layers. The incorporation efficiency of DMZn in InAsSb was studied as a function of growth temperature, V/III ratio and DMZn flow rate. A higher Zn incorporation was observed in InAsSb epitaxial layers grown at a lower temperature and V/III ratio as opposed to the layers grown at a higher temperature and V/III ratio. This study also revealed that the use of DMZn caused a dopant memory effect. A two-layer model proposed by Nedoluha and Koch (1952) was used to simulate the Hall measurements of Zn doped InAs and InAsSb in order to correct the shortcomings of conventional Hall measurements in determining the electrical properties exhibited by these materials Advisors/Committee Members: Botha, J R Prof, Venter, A Prof.

Subjects/Keywords: Metal organic chemical vapor deposition

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APA (6^th Edition):

Shamba, P. (2007). MOCVD growth and electrical characterisation of InAs thin films. (Masters Thesis). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/706

Chicago Manual of Style (16^th Edition):

Shamba, Precious. “MOCVD growth and electrical characterisation of InAs thin films.” 2007. Masters Thesis, Nelson Mandela Metropolitan University. Accessed January 16, 2021. http://hdl.handle.net/10948/706.

MLA Handbook (7^th Edition):

Shamba, Precious. “MOCVD growth and electrical characterisation of InAs thin films.” 2007. Web. 16 Jan 2021.

Vancouver:

Shamba P. MOCVD growth and electrical characterisation of InAs thin films. [Internet] [Masters thesis]. Nelson Mandela Metropolitan University; 2007. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10948/706.

Council of Science Editors:

Shamba P. MOCVD growth and electrical characterisation of InAs thin films. [Masters Thesis]. Nelson Mandela Metropolitan University; 2007. Available from: http://hdl.handle.net/10948/706

Hong Kong University of Science and Technology

4. Lai, Billy ECE. Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si.

Degree: 2018, Hong Kong University of Science and Technology

URL: http://repository.ust.hk/ir/Record/1783.1-95901 ; https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html

► Optoelectronics operating at the mid-infrared wavelength have been increasingly common in a wide range of areas including the defense industry, the automotive industry, and even… (more)

▼ Optoelectronics operating at the mid-infrared wavelength have been increasingly common in a wide range of areas including the defense industry, the automotive industry, and even natural gas detection. Narrow bandgap semiconductors have been the building blocks that have enabled these mid-IR technologies. A problem not unique to just narrow band gap semiconductors, but with most III-V semiconductors is the lack of semi-insulating, large sized, and lattice matched substrates. This prevents a wider deployment of these technologies mainly due to cost. To overcome these challenges, there has been significant effort in integrating III-V semiconductors on the Si platform. With this combination, III-V semiconductors benefit from a well-established and robust manufacturing platform while Si-based circuits benefit from increased functionality and performance. However, compared to GaAs/Si and InP/Si material systems, narrow bandgap semiconductor and Si heteroepitaxy is far less established. In this thesis, the heteroepitaxy of narrow bandgap semiconductors, namely GaSb and InAs, on Si is optimized and characterized to explore limitations and potential. Combining aspect ratio trapping with V-grooved patterned Si substrates, GaSb nanoridges were grown using metal organic chemical vapor deposition and characterized. By studying the heterointerfaces between GaSb and InAs, a GaAsSb-like interface at 500°C were determined to be the optimal conditions for InAs/GaSb heterostructures integrated onto Si. InAs/GaSb nanoridge gated resistors were fabricated and exhibited a current of 135 μA/μm at a Vds of 1 V and a Vg of 0 V. The growth of GaSb thin films onto various types of Si substrates, including V-grooved Si and GaAs on planar Si templates, yielded films of comparable uniformity in lattice parameters to the best grown using molecular beam epitaxy. The growth on planar Si templates yielded the smoothest GaSb films and have potential to serve as GaSb templates for infrared optoelectronics integrated on Si.

Subjects/Keywords: Semiconductors ; Metal organic chemical vapor deposition ; Epitaxy

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APA (6^th Edition):

Lai, B. E. (2018). Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-95901 ; https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Lai, Billy ECE. “Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed January 16, 2021. http://repository.ust.hk/ir/Record/1783.1-95901 ; https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Lai, Billy ECE. “Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si.” 2018. Web. 16 Jan 2021.

Vancouver:

Lai BE. Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2021 Jan 16]. Available from: http://repository.ust.hk/ir/Record/1783.1-95901 ; https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lai BE. Heteroepitaxy and characterization of GaSb and InAs narrow bandgap semiconductors on Si. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: http://repository.ust.hk/ir/Record/1783.1-95901 ; https://doi.org/10.14711/thesis-991012637367403412 ; http://repository.ust.hk/ir/bitstream/1783.1-95901/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Rutgers University

5. Jumaah, Omar Dhannoon, 1983-. Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process.

Degree: PhD, Mechanical and Aerospace Engineering, 2019, Rutgers University

URL: https://rucore.libraries.rutgers.edu/rutgers-lib/61775/

► Gallium nitride (GaN) thin film is an attractive material for manufacturing optoelectronic device applications due to its wide band-gap and superb optoelectronic performance. The reliability… (more)

▼ Gallium nitride (GaN) thin film is an attractive material for manufacturing optoelectronic device applications due to its wide band-gap and superb optoelectronic performance. The reliability and durability of the devices depend on the quality of thin films. Metal-organic chemical vapor deposition (MOCVD) process is a common technique used to fabricate high-quality GaN thin films. The deposition rate and uniformity of thin films are manipulated by controlling operating conditions and reactor geometry configurations. In this study, the epitaxial growth of GaN thin films on sapphire substrates (AL2O3) was carried out in two commercial MOCVD systems, a vertical rotating disk MOCVD reactor, and a close-coupled showerhead MOCVD reactor. Material characterizations have been done using Atomic Force Microscopy (AFM), X-ray diffraction (XRD), Scanning Electron Microscope (SEM), and Raman scattering to examine the surface morphology and crystal quality of GaN thin films. The growth rate and uniformity of GaN thin films are simulated based on a three-dimensional computational fluid dynamics (CFD) model. Transport phenomena and chemical kinetics of the GaN growth process are performed using a reduced chemistry model, which contains 17 gas phase, and 8 surface species participating in 17 gas phase and 17 surface reactions. Numerical simulation of the single wafer and multi-wafers reactors have performed. A comprehensive study of the influence of operating variables, including rotation rate of the susceptor, susceptor temperature, inlet velocity, the reactor pressure, and precursor concentration ratio, on the GaN growth process is carried out. Operating parameters that have significant effects on the growth rate and uniformity of GaN thin films are identified. The reactor pressure and flow rate of trimethylgallium (TMG) have a significant effect on the deposition rate. A high-quality thin film is obtained when pure H2 is used as a carrier gas. The high flow rate of pure N2 gas enhances the growth of GaN thin films at high reactor pressure. However, it decreases the uniformity of the GaN thin film and promotes carbon contaminations. Thus, using an appropriate mixture of H2 and N2 as a carrier can improve the deposition rate and quality of GaN thin films. The inlet design has a significant effect on improving the reactant species utilization and increases the growth rate. The proper distance between the inlet and the susceptor aids to decrease the temperature gradient and improve the stability of the flow above the rotating susceptor. The optimization of GaN deposition rate and uniformity in the MOCVD process have represented in a surrogate model. Surrogate-based optimization is an effective technique to alleviate expensive computation experiments with fewer sample points. The response surface from simulation data with minimum error variance estimation is generated using the Kriging method. The optimization of GaN deposition is performed as a deterministic problem, without taking into consideration the uncertain input parameters and… Advisors/Committee Members: Jaluria, Yogesh (chair), Mazzeo, Aaron (internal member), Shan, Jerry (internal member), Birnie, Dunbar (outside member), School of Graduate Studies.

Subjects/Keywords: Gallium nitride; Metal organic chemical vapor deposition

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APA (6^th Edition):

Jumaah, Omar Dhannoon, 1. (2019). Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/61775/

Chicago Manual of Style (16^th Edition):

Jumaah, Omar Dhannoon, 1983-. “Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process.” 2019. Doctoral Dissertation, Rutgers University. Accessed January 16, 2021. https://rucore.libraries.rutgers.edu/rutgers-lib/61775/.

MLA Handbook (7^th Edition):

Jumaah, Omar Dhannoon, 1983-. “Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process.” 2019. Web. 16 Jan 2021.

Vancouver:

Jumaah, Omar Dhannoon 1. Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process. [Internet] [Doctoral dissertation]. Rutgers University; 2019. [cited 2021 Jan 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/61775/.

Council of Science Editors:

Jumaah, Omar Dhannoon 1. Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process. [Doctoral Dissertation]. Rutgers University; 2019. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/61775/

NSYSU

6. Weng, Tzu-Yu. Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes.

Degree: Master, Chemistry, 2003, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919

► Metal diketonato complexes are populate in recent ten years, because of diketone compound is easy to get and cheap and also have good volatility to… (more)

Subjects/Keywords: Metal diketonato complexes; Cis/Trans Geometry; Metal Organic Chemical Vapor Deposition; MOCVD

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APA (6^th Edition):

Weng, T. (2003). Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Weng, Tzu-Yu. “Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes.” 2003. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Weng, Tzu-Yu. “Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes.” 2003. Web. 16 Jan 2021.

Vancouver:

Weng T. Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes. [Internet] [Thesis]. NSYSU; 2003. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Weng T. Controlling Factors of Cis/Trans Geometry in Ni and Co Diketonato Complexes. [Thesis]. NSYSU; 2003. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0903103-180919

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Indian Institute of Science

7. Yaddanapudi, G R Krishna. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.

Degree: PhD, Faculty of Engineering, 2017, Indian Institute of Science

URL: http://etd.iisc.ac.in/handle/2005/2662

► Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting materials after Si and GaAs. The excellent optical and… (more)

▼ Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting materials after Si and GaAs. The excellent optical and electrical properties of these nitrides result in numerous applications in lighting, lasers, and high-power/high-frequency devices. Due to the lack of cheap bulk III- Nitride substrates, GaN based devices have been developed on foreign substrates like Si, sapphire and SiC. These technologies have been predominantly developed on the so called Ga-polarity epitaxial stacks with growth in the [0001] direction of GaN. It is this orientation that grows most easily on sapphire by metal organic chemical vapor deposition (MOCVD), the most common combination of substrate and deposition method used thus far. The opposite [000¯1] or N-polar orientation, very different in properties due to the lack of an inversion centre, offers several ad- vantages that could be exploited for better electronic and optoelectronic devices. However, its growth is more challenging and needs better understanding. The aim of the work reported in this dissertation was a systematic investigation of the relation between the various growth parameters which control polarity, surface roughness and mosaicity of GaN on non-miscut sapphire (0001) wafers for power electronics and lighting applications, with emphasis on the realization of N-polar epitaxial layers. GaN is grown on sapphire (0001) in a two-step process, which involves the deposition of a thin low temperature GaN nucleation layer (NL) on surface modified sapphire followed by the growth of high temperature device quality GaN epitaxial layer. The processing technique used is MOCVD. Various processing methods for synthesis of GaN layers are described with particular em- phasis on MOCVD method. The effect of ex situ cleaning followed by an in situ cleaning on the surface morphology of sapphire (0001) wafers is discussed. The characterization tools used in this dissertation for studying the chemical bond nature of nitrided sapphire surface and microstructural evolution (morphological and structural) of GaN layers are described in detail. The effect of nitridation temperature (TN) on structural transformation of non- miscut sapphire (0001) surface has been explored. The structural evolution of nitrided layers at different stages of their process like as grown stage and thermal annealing stage is investigated systematically. The chemical bond environment information of the nitrided layers have been examined by x-ray photoelectron spectroscopy (XPS). It is found that high temperature nitridation (TN ≥ 800 °C) results in an Al-N tetrahedral bond environment on sapphire surface. In contrast, low temperature nitridation (TN = 530 °C) results in a complex Al-O-N environment on sapphire surfaces. Microstructural evolution of low temperature GaN NLs has been studied at every stage of processing by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Surface roughness evolution and island size distribution of NLs measured from AFM… Advisors/Committee Members: Banerjee, Dipankar (advisor), Raghavan, Srinivasan (advisor).

Subjects/Keywords: Semiconductors; Nitrides; Gallium Nitride; N-Polar Gallium Nitride; Metal Organic Chemical Vapor Deposition (MOCVD); Galllium Nitride Growth; High Temperature Gallium Nitride; Low Temperature Gallium Nitride; GaN; Materials Engineering

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APA (6^th Edition):

Yaddanapudi, G. R. K. (2017). Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2662

Chicago Manual of Style (16^th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2017. Doctoral Dissertation, Indian Institute of Science. Accessed January 16, 2021. http://etd.iisc.ac.in/handle/2005/2662.

MLA Handbook (7^th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2017. Web. 16 Jan 2021.

Vancouver:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2017. [cited 2021 Jan 16]. Available from: http://etd.iisc.ac.in/handle/2005/2662.

Council of Science Editors:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Doctoral Dissertation]. Indian Institute of Science; 2017. Available from: http://etd.iisc.ac.in/handle/2005/2662

Penn State University

8. Zhang, Xiaotian. METALORGANIC CHEMICAL VAPOR DEPOSITION OF TWO-DIMENSIONAL LAYERED CHALCOGENIDES.

Degree: 2019, Penn State University

URL: https://submit-etda.libraries.psu.edu/catalog/16678xwz5047

► Two dimensional (2D) materials have attracted wide interest because of their layered crystal structures and anisotropic properties which leads to potential new diversity of function… (more)

▼ Two dimensional (2D) materials have attracted wide interest because of their layered crystal structures and anisotropic properties which leads to potential new diversity of function in nanoelectronics, photonics, sensing, energy storage, and optoelectronics. Among them, the family of 2D layered chalcogenides (2DLCs) including transition metal dichalcogenides (TMDs) (in the form of MX2 where M=Mo, W, etc. and X=S, Se, Te) and group IIIA metal chalcogenides (MCs) (typically in the form of MX and M2X3 where M=Ga, In and X=S, Se) have been a focus of increasing interest due to their number of intriguing properties. Monolayer TMDs have exhibited unique optical and electical properties such as indirect-to-direct band gap, spin valley polarization, interlayer exciton coupling, single photon emission. On the other hand, monolayer and few-layer MCs also demonstrate novel properties such as high carrier mobilities (~1000 cm2/Vs) for γ-InSe and ultrasensitive photoresponse as well as in-plane or/and out-of-plane ferroelectricity for α- and β-In2Se3. Therefore, the rapid development of device technologies based on 2DLCs causes increasing demand for synthesis of high-quality wafer-scale single crystal monolayer and few layer films. Among techniques for thin film deposition, gas source chemical vapor deposition (CVD) /metalorganic CVD (MOCVD) is emerging as a promising method for wafer-scale growth of TMDs and related 2DLCs due to the ability to grow at high temperatures (>700 ℃), moderate reactor pressures (10-700 Torr) and high chalcogen/metal gas phase ratios which are needed to achieve epitaxy and film stoichiometry. However, the effects of precursor chemistry on film properties have not been examined and methods to achieve uniform, fully coalesced epitaxial monolayer TMD films are required. In addition, the growth of group III MCs by MOCVD is largely unexplored. This dissertation focuses on a comprehensive study of gas source CVD/MOCVD growth of WSe2 and In2Se3 which represent the TMDs and group IIIA MCs, respectively. In the MOCVD growth of WSe2, a defective graphene layer was found to form on the sapphire substrate simultaneously at high growth temperature and high Se:W ratio when using tungsten hexacarbonyl (W(CO)6) and dimethyl selenide ((CH3)2Se, DMSe) as precursors. The graphene layer alters the surface energy of the substrate reducing the lateral growth and coalescence of WSe2 domains. By switching to hydrogen selenide (H2Se) instead of DMSe, the defective graphene layer was eliminated and a multi-step diffusion-mediated process was developed for the epitaxial growth of coalesced monolayer WSe2 films on c-plane sapphire. The multi-step process consists of an initial nucleation step which used a high W(CO)6 flow rate along with H2Se at 800℃ and 700 Torr to promote nucleation. The W(CO)6 was then switched out of the reactor and the sample was annealed in H2Se to promote surface diffusion of tungsten-containing species to form oriented WSe2 islands with uniform size and controlled density. The W(CO)6 was then… Advisors/Committee Members: Joan M. Redwing, Dissertation Advisor/Co-Advisor, Joan M. Redwing, Committee Chair/Co-Chair, Joshua A. Robinson, Committee Member, Thomas N. Jackson, Committee Member, Susan B. Sinnott, Outside Member.

Subjects/Keywords: Two-dimensional Materials; Transition Metal Dichalcogenides; 2D Layered Chalcogenides; Chemical Vapor Deposition; Metalorganic Chemical Vapor Deposition; Thin Film Deposition; 2D Materials; CVD; MOCVD; WSe2; In2Se3

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Zhang, X. (2019). METALORGANIC CHEMICAL VAPOR DEPOSITION OF TWO-DIMENSIONAL LAYERED CHALCOGENIDES. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/16678xwz5047

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Zhang, Xiaotian. “METALORGANIC CHEMICAL VAPOR DEPOSITION OF TWO-DIMENSIONAL LAYERED CHALCOGENIDES.” 2019. Thesis, Penn State University. Accessed January 16, 2021. https://submit-etda.libraries.psu.edu/catalog/16678xwz5047.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Zhang, Xiaotian. “METALORGANIC CHEMICAL VAPOR DEPOSITION OF TWO-DIMENSIONAL LAYERED CHALCOGENIDES.” 2019. Web. 16 Jan 2021.

Vancouver:

Zhang X. METALORGANIC CHEMICAL VAPOR DEPOSITION OF TWO-DIMENSIONAL LAYERED CHALCOGENIDES. [Internet] [Thesis]. Penn State University; 2019. [cited 2021 Jan 16]. Available from: https://submit-etda.libraries.psu.edu/catalog/16678xwz5047.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang X. METALORGANIC CHEMICAL VAPOR DEPOSITION OF TWO-DIMENSIONAL LAYERED CHALCOGENIDES. [Thesis]. Penn State University; 2019. Available from: https://submit-etda.libraries.psu.edu/catalog/16678xwz5047

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Rutgers University

9. Meng, Jiandong, 1983-. Simulation and optimization of the GaN MOCVD process.

Degree: PhD, Mechanical and Aerospace Engineering, 2014, Rutgers University

URL: https://rucore.libraries.rutgers.edu/rutgers-lib/45362/

►

A detailed mathematical model for the growth of gallium nitride (GaN) in metalorganic chemical vapor deposition (MOCVD) process is developed, and the complete chemical mechanism… (more)

▼

A detailed mathematical model for the growth of gallium nitride (GaN) in metalorganic chemical vapor deposition (MOCVD) process is developed, and the complete chemical mechanism is introduced, which has 17 gas phase and 23 surface species participating in 17 gas phase and 52 surface reactions. Based on an experimental study on the flow and thermal transport processes in the system, and available experimental data in the literature, validation study is conducted to ensure its accuracy. After that, the entire model is applied to perform steady state numerical simulation of the GaN MOCVD process in both 2D impinging reactor and 3D rotating disk reactor. The flow, temperature and concentration profiles are predicted, and the dependence of the growth rate and uniformity of the deposited layers on operating conditions, such as reactor operating pressure, susceptor temperature, inlet velocity, rotational speed, and concentration ratio of the precursors, is investigated to gain greater insight into the reactor performance and characteristics. The transient behavior of the GaN deposition process is numerically investigated. The 2D impinging reactor is considered to examine the time-dependent transport in the MOCVD process, including the steady-state deposition process, and the system start-up and shut-down. The temperature field and the deposition rate are studied as functions of time, as well as the precursor mass fraction at certain times. This work also provides inputs on the effects of changing operating conditions and the duration of starting and shut down effects. Two design variables, inlet velocity and inlet precursor concentration ratio, which have a significant effect on the deposition rate and uniformity of the film are identified. Inlet precursor concentration ratio is defined as the ratio of the volume flow rate of ammonia to the volume flow rate of trimethylgallium. Response surfaces for deposition rate and uniformity as a function of inlet velocity and inlet precursor concentration are developed by Compromise Response Surface Method (CRSM). The response surfaces are used to generate the Pareto frontier for the conflicting objectives of optimal deposition rate and uniformity. The trade-off between deposition rate and uniformity is captured by the Pareto frontier.

Advisors/Committee Members: Jaluria, Yogesh (chair), Lin, Hao (internal member), Tse, Stephen D. (internal member), Ierapetritou, Marianthi G. (outside member).

Subjects/Keywords: Gallium nitride; Metal organic chemical vapor deposition; Mathematical models

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Meng, Jiandong, 1. (2014). Simulation and optimization of the GaN MOCVD process. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/45362/

Chicago Manual of Style (16^th Edition):

Meng, Jiandong, 1983-. “Simulation and optimization of the GaN MOCVD process.” 2014. Doctoral Dissertation, Rutgers University. Accessed January 16, 2021. https://rucore.libraries.rutgers.edu/rutgers-lib/45362/.

MLA Handbook (7^th Edition):

Meng, Jiandong, 1983-. “Simulation and optimization of the GaN MOCVD process.” 2014. Web. 16 Jan 2021.

Vancouver:

Meng, Jiandong 1. Simulation and optimization of the GaN MOCVD process. [Internet] [Doctoral dissertation]. Rutgers University; 2014. [cited 2021 Jan 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/45362/.

Council of Science Editors:

Meng, Jiandong 1. Simulation and optimization of the GaN MOCVD process. [Doctoral Dissertation]. Rutgers University; 2014. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/45362/

University of Illinois – Urbana-Champaign

10. Bassett, Kevin P. Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control.

Degree: MS, 1200, 2010, University of Illinois – Urbana-Champaign

URL: http://hdl.handle.net/2142/14733

► Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound… (more)

Subjects/Keywords: Metal-organic chemical vapor deposition (MOCVD); Organometallic vapor phase epitaxy (OMVPE); Metalorganic vapour phase epitaxy (MOVPE)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Bassett, K. P. (2010). Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/14733

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Bassett, Kevin P. “Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control.” 2010. Thesis, University of Illinois – Urbana-Champaign. Accessed January 16, 2021. http://hdl.handle.net/2142/14733.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Bassett, Kevin P. “Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control.” 2010. Web. 16 Jan 2021.

Vancouver:

Bassett KP. Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2010. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2142/14733.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bassett KP. Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control. [Thesis]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/14733

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Hong Kong University of Science and Technology

11. Li, Qiang. Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD.

Degree: 2014, Hong Kong University of Science and Technology

URL: http://repository.ust.hk/ir/Record/1783.1-92029 ; https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html

► After more than 40 years’ transistor scaling, Si CMOS technology has enabled state-of-the-art microprocessors with large-volume, low-cost production and high-level integration. Meanwhile, InP based transistor… (more)

▼ After more than 40 years’ transistor scaling, Si CMOS technology has enabled state-of-the-art microprocessors with large-volume, low-cost production and high-level integration. Meanwhile, InP based transistor technologies have established their niche in performance-driven fields, and continue to play an important role in emerging millimeter wave and terahertz applications. As CMOS scales beyond the 22 nm node, severe short channel effects and power density constraint pose great challenges. Monolithic integration of InP based high-speed transistors on large-diameter Si substrates is attracting growing interest for post-Si digital integrated circuits. Moreover, such integration can pave the way to a new class of hybrid integrated circuits utilizing advanced Si manufacturing platform with on-chip interconnects. In this thesis, heteroepitaxy of InP on Si substrates by metalorganic chemical vapor deposition and its application in InGaAs MOSFETs were studied. The growth of InP on Si has been impeded by the large mismatch in lattice constant and thermal expansion coefficient as well as the difference in crystal polarities. To manage the resultant high-density defects, both blanket heteroepitaxy and selective patterned growth were explored. Device quality epitaxial InP on planar Si using GaAs as an intermediate buffer was firstly investigated. On the InP/GaAs/Si compliant substrates, ultra-high mobility InGaAs quantum wells were grown, along with smooth surface morphology. The fabricated nano-scale InGaAs MOSFETs with source/drain regrowth achieved a logic figure of merit (g_m/SS) up to 14 and record-low on-resistance of 129 Ω∙μm. Combining the two-step growth method used in the aforementioned blanket epitaxy and the defect trapping mechanism in nanopatterned growth, a technique for growing large-area coalesced InP on nanostructured Si substrates was successfully developed. The obtained InP-on-Si (IOS) templates exhibited greatly improved crystalline quality with reduced buffer thickness. Al₂O₃/InP MOS capacitors with low interface states density were demonstrated on the IOS templates.

Subjects/Keywords: Indium phosphide ; Inhomogeneous materials ; Metal organic chemical vapor deposition ; Metal oxide semiconductor field-effect transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Li, Q. (2014). Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-92029 ; https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Li, Qiang. “Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed January 16, 2021. http://repository.ust.hk/ir/Record/1783.1-92029 ; https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Li, Qiang. “Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD.” 2014. Web. 16 Jan 2021.

Vancouver:

Li Q. Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2021 Jan 16]. Available from: http://repository.ust.hk/ir/Record/1783.1-92029 ; https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li Q. Heteroepitaxy optimization of InP on planar and nanopatterned Si substrates for transistors by MOCVD. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: http://repository.ust.hk/ir/Record/1783.1-92029 ; https://doi.org/10.14711/thesis-b1301489 ; http://repository.ust.hk/ir/bitstream/1783.1-92029/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Anna University

12. Ganesh V. Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals.

Degree: Physics, 2013, Anna University

URL: http://shodhganga.inflibnet.ac.in/handle/10603/9921

►

Semiconductors such as group III-nitrides are playing important role in optoelectronic devices especially blue-green light emitting diodes (LED s), short wavelength laser diodes (LD s)… (more)

▼

Semiconductors such as group III-nitrides are playing important role in optoelectronic devices especially blue-green light emitting diodes (LED s), short wavelength laser diodes (LD s) and UV detectors for hightemperature and high power microelectronic applications. The monolithic integration of optical and electrical devices represents an attractive technological tool for manufacturing of semiconductor devices in industries. For the growth of III-Nitride semiconductors, the epitaxial methods like metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), vapor phase epitaxy (VPE) and pulsed laser deposition (PLD) continue to lead the field of thin film crystal growth by exploring new physics, materials science and technology for the fabrication of novel devices. The change in morphology and size of the pure and cobalt doped GaN nanocrystals were observed by SEM and TEM. The optical properties of the pure and doped GaN nanocrystals were studied by cathodoluminiscence (CL). The Magnetic measurements were carried out by superconducting quantum interface device (SQUID) magnetometer. The magnetic measurement shows the existence of ferromagnetic behavior both at 10 and 300 K. All the reported methods in the literature have used expensive techniques to grow GaN devices for field emission displays. The lattice constant of the basal plane derived from the x-ray analysis was c = 5.20 Å. The SEM image shows rods like structures. Cluster like structure growth has been observed in the AFM image. Nanorods with tip like structure at the top edge were observed in 3D AFM image. In order to produce efficient field emission of electrons, the tip-like structures were usually used. The photoluminescence spectrum of GaN islands grown on sapphire substrate exhibited a strong band edge emission at 367 nm. The experimentally calculated field enhancement factor estimated was 425, which confirms the suitability of GaN nanotips for field emitter applications.

References p. 74-88, List of publications p. 89-91

Advisors/Committee Members: Baskar K.

Subjects/Keywords: Semiconductor; Physics; Light emitting diodes; Laser diodes; Metal-organic chemical vapor deposition

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APA (6^th Edition):

V, G. (2013). Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/9921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

V, Ganesh. “Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals.” 2013. Thesis, Anna University. Accessed January 16, 2021. http://shodhganga.inflibnet.ac.in/handle/10603/9921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

V, Ganesh. “Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals.” 2013. Web. 16 Jan 2021.

Vancouver:

V G. Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals. [Internet] [Thesis]. Anna University; 2013. [cited 2021 Jan 16]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/9921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

V G. Synthesis and characterization of pure and cobalt Doped Gallium Nitride Nanocrystals. [Thesis]. Anna University; 2013. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/9921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Stellenbosch University

13. Sikiti, Phumile. Flexible Co(II) Metal-Organic Frameworks with Mixed Ligands under Controlled Pressure.

Degree: PhD, 2019, Stellenbosch University

URL: http://hdl.handle.net/10019.1/107068

►

ENGLISH ABSTRACT: A number of flexible metal-organic frameworks (MOFs) are shown to undergo phase changes under CO2 gas pressure and, in two cases, the mechanisms… (more)

▼

ENGLISH ABSTRACT: A number of flexible metal-organic frameworks (MOFs) are shown to undergo phase changes under CO2 gas pressure and, in two cases, the mechanisms of these changes have been elucidated using computational simulation and in situ variable-pressure single-crystal diffraction (VP-SCD). The primary objective of this work was to utilise suitable ligands to synthesise flexible cobalt-based MOFs that undergo phase changes under gas loading at 298 K.Where possible, the phase change mechanisms were visualised crystallographically at themolecular level by employing an environmental gas cell. The first section describes a new non-interpenetrated flexible MOF, {[Co2(OBA)2(BPMP)]·1.5(DMF)}n (COB-DMF), where OBA = 4,4'-oxybis(benzoic acid), BPMP = 4-bis(pyridin-4-ylmethyl)piperazine, with a new network topology. COB possesses minimal porosity and activation yields a framework with discrete voids and substantial reduction in guest-accessible volume. In the present study it is shown by means of in-situ VP-SCD that COB exhibits structural flexibility under CO2 gas loading at 298 K in a single-crystal to single-crystal manner. The mode of flexibility combines two separate mechanisms, which is highly unusual. The results are supported by in-situ powder X-ray diffraction. The second section describes a different MOF ({[Co2(OBA)2(BPMP)]·2.5(DMF)}n, COB1) prepared using the same components that were used to prepare COB. Although the stoichiometry was the same, the synthesis temperature was different and the framework systems are entirely different. Activation of COB1 yields a narrow-pore framework from a wide-pore phase. The framework breathes and switches between the narrow-pore and wide-pore phases at a specific CO2 loading pressure at 298 K. The proposed mechanism for flexibility is well supported by pressure-gradient differential scanning calorimetry and in situ VP-SCD and was further validated by means of molecular modelling. The final section describes a new interdigitated two dimensional PCP {[Co2(OBA)2(BPY)2]·2(DMF)}n. The material exhibits flexibility at a specific CO2 pressure at 298 K, with large hysteresis upon desorption, the single crystals did not survive CO2 uptake, and the flexibility was validated using VP-PXRD. Gas sorption analysis implies that the host exhibits shape memory upon complete desorption, but closer inspection of the desorption isotherm in the low-pressure range shows that the material reverts to its activated form upon complete guest removal. This constitutes approximately 26 bar of hysteresis in the reversal of the gas-induced phase transition.

AFRIKAANSE OPSOMMING: Dit word getoon dat ‘n aantal buigbare metaal-organiese raamwerke (MOFs) fase verwisselinge ondergaan onder CO2 lading en in twee gevalle is die meganismes van die fase veranderinge uitgelê deur rekenaargebaseerde simulasie en in situ veranderlike-druk enkel-kristal diffraksie (VP-SCD). Die hoof doelwit van hierdie werk was om gepaste ligande te gebruik vir die sintese van buigbare kobalt-gebaseerde MOFs wat fase…

Advisors/Committee Members: Leonard J, . Barbour, Stellenbosch University. Faculty of Chemistry and Polymer Science..

Subjects/Keywords: Metal organic chemical vapor deposition; UCTD; Ligands; Crystal fibers – Diffraction; Crystalline polymers

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Sikiti, P. (2019). Flexible Co(II) Metal-Organic Frameworks with Mixed Ligands under Controlled Pressure. (Doctoral Dissertation). Stellenbosch University. Retrieved from http://hdl.handle.net/10019.1/107068

Chicago Manual of Style (16^th Edition):

Sikiti, Phumile. “Flexible Co(II) Metal-Organic Frameworks with Mixed Ligands under Controlled Pressure.” 2019. Doctoral Dissertation, Stellenbosch University. Accessed January 16, 2021. http://hdl.handle.net/10019.1/107068.

MLA Handbook (7^th Edition):

Sikiti, Phumile. “Flexible Co(II) Metal-Organic Frameworks with Mixed Ligands under Controlled Pressure.” 2019. Web. 16 Jan 2021.

Vancouver:

Sikiti P. Flexible Co(II) Metal-Organic Frameworks with Mixed Ligands under Controlled Pressure. [Internet] [Doctoral dissertation]. Stellenbosch University; 2019. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10019.1/107068.

Council of Science Editors:

Sikiti P. Flexible Co(II) Metal-Organic Frameworks with Mixed Ligands under Controlled Pressure. [Doctoral Dissertation]. Stellenbosch University; 2019. Available from: http://hdl.handle.net/10019.1/107068

North Carolina State University

14. Lai, Kun-Yu Alvin. InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

URL: http://www.lib.ncsu.edu/resolver/1840.16/5610

► Nonpolar (m-plane or a-plane) gallium nitride (GaN) is predicted to be a potential substrate material to improve luminous efficiencies of nitride-based quantum wells (QWs). Numerical… (more)

▼ Nonpolar (m-plane or a-plane) gallium nitride (GaN) is predicted to be a potential substrate material to improve luminous efficiencies of nitride-based quantum wells (QWs). Numerical calculations indicated that the spontaneous emission rate in a single In0.15Ga0.85N/GaN QW could be improved by ~2.2 times if the polarization-induced internal field was avoided by epitaxial deposition on nonpolar substrates. A challenge for nonpolar GaN is the limited size (less than 10Ãƒâ€”10 mm2) of substrates, which was addressed by expansion during the regrowth by Hydride Vapor Phase Epitaxy (HVPE). Subsurface damage in GaN substrates were reduced by annealing with NH3 and N2 at 950 Ã‚ÂºC for 60 minutes. It was additionally found that the variation of m-plane QWsÃ¢â‚¬â„¢ emission properties was significantly increased when the substrate miscut toward a-axis was increased from 0Ã‚Âº to 0.1Ã‚Âº. InGaN/GaN QWs were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on c-plane and m-plane GaN substrates. The QWs were studied by cathodoluminescence spectroscopy with different incident electron beam probe currents (0.1 nA ~ 1000 nA). Lower emission intensities and longer peak wavelengths from c-plane QWs were attributed to the Quantum-confined Stark Effect (QCSE). The emission intensity ratios of m-plane QWs to c-plane QWs decreased from 3.04 at 1 nA to 1.53 at 1000 nA. This was identified as the stronger screening effects of QCSE at higher current densities in c-plane QWs. To further investigate these effects in a fabricated structure, biased photoluminescence measurements were performed on m-plane InGaN/GaN QWs. The purpose was to detect the possible internal fields induced by the dot-like structure in the InGaN layer through the response of these internal fields under externally applied fields. No energy shifts of the QWs were observed, which was attributed to strong surface leakage currents. Advisors/Committee Members: Mark Johnson, Committee Co-Chair (advisor).

Subjects/Keywords: GaN; InGaN; quantum well; metal-organic chemical vapor deposition; quantum dot; light emitting diode

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APA (6^th Edition):

Lai, K. A. (2009). InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5610

Chicago Manual of Style (16^th Edition):

Lai, Kun-Yu Alvin. “InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates.” 2009. Doctoral Dissertation, North Carolina State University. Accessed January 16, 2021. http://www.lib.ncsu.edu/resolver/1840.16/5610.

MLA Handbook (7^th Edition):

Lai, Kun-Yu Alvin. “InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates.” 2009. Web. 16 Jan 2021.

Vancouver:

Lai KA. InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2021 Jan 16]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5610.

Council of Science Editors:

Lai KA. InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5610

Hong Kong University of Science and Technology

15. Ma, Jun ECE. Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs.

Degree: 2014, Hong Kong University of Science and Technology

URL: http://repository.ust.hk/ir/Record/1783.1-92613 ; https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html

► III-nitrides are one of the most important semiconductors since silicon, offering high-carrier saturation velocity, high breakdown field strength and hence enormous opportunities in RF/power electronics.… (more)

▼ III-nitrides are one of the most important semiconductors since silicon, offering high-carrier saturation velocity, high breakdown field strength and hence enormous opportunities in RF/power electronics. Due to the lack of native substrates, III-nitrides are normally heteroepitaxially grown on lattice-mismatched substrates, such as silicon, sapphire and silicon carbide. However, high-density dislocations, unintentional doping from the substrates and other issues arising from mismatched heteroepitaxy may degrade device electrical properties and cause reliability concerns. To resolve these problems and unleash the full potential of III-nitrides, both advanced epitaxy techniques and innovative device architectures need to be engineered. This thesis focuses on the growth of high-performance III-nitrides high electron mobility transistors (HEMTs) by metalorganic chemical vapor deposition (MOCVD) and their monolithic integration with light emitting diodes (LEDs). AlGaN/AlN/GaN HEMTs were grown and optimized on sapphire substrates with enhanced buffer resistivity and electron mobility. Key factors impacting the resistivity of the buffer were studied for growth on Si substrates. MOCVD in situ deposited SiN_x was also investigated and successfully applied to SiN_x/AlN/GaN metal-insulator-semiconductor HEMTs as gate insulation and surface passivation. A maximum drain current of 1550 mA/mm and an on/off-state current ratio > 10⁷ have been achieved. Finally, monolithic integration of HEMTs and LEDs was demonstrated with both selective epitaxial removal (SER) and selective epitaxial growth (SEG) methods. It was found that the SEG method yield better results as SER led to degradation of the LED performance by plasma damage of the p-GaN surface during the removal process. The integrated HEMT-LEDs by SEG exhibited a peak transconductance of 246 mS/mm, similar to conventional HEMTs, and a forward voltage of 3.7 V at 20 mA, comparable to stand-alone LED devices. Blue light emission modulation by gate biasing of the HEMT was also demonstrated.

Subjects/Keywords: Gallium nitride ; Metal organic chemical vapor deposition ; Modulation-doped field-effect transistors ; Light emitting diodes

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APA (6^th Edition):

Ma, J. E. (2014). Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-92613 ; https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Ma, Jun ECE. “Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed January 16, 2021. http://repository.ust.hk/ir/Record/1783.1-92613 ; https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Ma, Jun ECE. “Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs.” 2014. Web. 16 Jan 2021.

Vancouver:

Ma JE. Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2021 Jan 16]. Available from: http://repository.ust.hk/ir/Record/1783.1-92613 ; https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ma JE. Performance enhancement of III-nitrides HEMTs grown by MOCVD and their monolithic integration with LEDs. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: http://repository.ust.hk/ir/Record/1783.1-92613 ; https://doi.org/10.14711/thesis-b1274328 ; http://repository.ust.hk/ir/bitstream/1783.1-92613/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

16. Choi, Wonsik. Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy.

Degree: MS, Electrical & Computer Engineering, 2015, University of Illinois – Urbana-Champaign

URL: http://hdl.handle.net/2142/88102

► Realizing lateral p-n junction is a critical technique to fabricate electronic and optic devices. Recently, lateral p-n junctions were achieved by ex-situ doping on thin… (more)

Subjects/Keywords: selective lateral epitaxy (SLE); semiconductor nanowires (SNWs); metal -organic chemical vapor deposition (MOCVD)

…growth is the vapor-liquid-solid (VLS) mechanism using metal-organic chemical vapor… …deposition (MOCVD) which can easily realize heterostructure NWs and control the doping… …metal particles and the wafer. The Au seeds-deposited samples were placed into the MOCVD… …Another doping pathway is through vapor-solid (VS) deposition: vapor phase dopants do… …lithography and metal deposition processes will be performed to form source, drain and gate metal…

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APA (6^th Edition):

Choi, W. (2015). Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/88102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Choi, Wonsik. “Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy.” 2015. Thesis, University of Illinois – Urbana-Champaign. Accessed January 16, 2021. http://hdl.handle.net/2142/88102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Choi, Wonsik. “Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy.” 2015. Web. 16 Jan 2021.

Vancouver:

Choi W. Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2015. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2142/88102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Choi W. Arrays of lateral p-n junction GaAs planar nanowire diodes grown by selective lateral epitaxy. [Thesis]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/88102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

The Ohio State University

17. Boeckl, John J. Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates.

Degree: PhD, Electrical Engineering, 2005, The Ohio State University

URL: http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970

► In this dissertation we report on the structural quality of the GaAs/Ge interface for GaAs nucleation by solid source molecular beam epitaxy (MBE). Through feedback… (more)

▼ In this dissertation we report on the structural quality of the GaAs/Ge interface for GaAs nucleation by solid source molecular beam epitaxy (MBE). Through feedback from these characterizations, optimized growth methods are established, demonstrating the ability to grow defect-free epitaxial GaAs films on Ge substrates. We also present data on the electrical activity associated with defects that result if the growth is not fully controlled. In theses studies we exploit a novel use of an electron beam induced current (EBIC) technique to show the electrical activity associated with anti-phase domains and inter-diffusion from regions as small as 100 nm. Integrating this GaAs MBE nucleation methodology on the SiGe graded substrates we show that the GaAs stoichiometry and material properties transfer without degradation from the higher threading dislocation density of the SiGe substrates. In these studies we show that fundamental defects such as; threading dislocation, anti-phase domains, and atomic inter-diffusion are controlled to a level that enables growth of extremely high quality GaAs device layers. Combined with the low TDD enabled by the SiGe graded buffer, record GaAs/Si minority carrier lifetimes in excess of 10 ns have been achieved. However, other larger scale defects are shown to have a limiting effect on large area device performance. One such morphological surface defect, known as the “bat”, is generated during the UHVCVD SiGe growth. The defect was comprehensively studied and results indicate that the impact on GaAs device performance was due to dislocation clusters in MBE device layers. Comparison analysis with GaAs overgrowth via metal organic chemical vapor deposition (MOCVD) demonstrated this growth method produced fully-operational large-area device structure. A model relating surface growth rates to an incomplete lattice-mismatch relaxation predicts the formation of these clusters. While challenges remain for monolithic III/V optoelectronic integration on Si, it is clear that the demonstration of successful GaAs nucleation on the SiGe substrate represents a significant milestone on the path to the final goal of truly integrated III-V devices with Si integrated circuits. Advisors/Committee Members: Ringel, Steven (Advisor).

Subjects/Keywords: molecular beam epitaxy; MBE; metal organic chemical vapor deposition; MOCVD; electron beam induced current; EBIC; defects; transmission electron microscopy; TEM

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APA (6^th Edition):

Boeckl, J. J. (2005). Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970

Chicago Manual of Style (16^th Edition):

Boeckl, John J. “Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates.” 2005. Doctoral Dissertation, The Ohio State University. Accessed January 16, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970.

MLA Handbook (7^th Edition):

Boeckl, John J. “Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates.” 2005. Web. 16 Jan 2021.

Vancouver:

Boeckl JJ. Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates. [Internet] [Doctoral dissertation]. The Ohio State University; 2005. [cited 2021 Jan 16]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970.

Council of Science Editors:

Boeckl JJ. Microstructural investigation of defects in epitaxial GaAs grown on mismatched Ge and SiGe/Si substrates. [Doctoral Dissertation]. The Ohio State University; 2005. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1116498970

Drexel University

18. Chen, Zizhao. The effect of metal halides on MoS2 growth by chemical vapor deposition.

Degree: 2018, Drexel University

URL: https://idea.library.drexel.edu/islandora/object/idea%3A8238

►

Two-dimensional (2D) materials are materials in which the crystal structure is arranged only along two dimensions. The first 2D material to be fabricated was graphene,… (more)

▼

Two-dimensional (2D) materials are materials in which the crystal structure is arranged only along two dimensions. The first 2D material to be fabricated was graphene, and it has been studied intensively for its unique band structure and excellent mechanical properties. Transition metal dichalcogenides (TMDs) are another type of 2D material that has a sandwich structure where a layer of transition metal atoms is situated between two layers of chalcogen atoms. MoS2, an example of TMDs, is the most studied 2D material because of the transition from indirect to direct bandgap when the layer number decreases. Chemical vapor deposition (CVD) is a widely used technique to synthesize 2D MoS2. Large-scale thin films can be obtained from this method; however, a limitation of CVD is that the reaction temperature required for growth is high (~800 °C). In this work, I synthesized MoS2 on SiO2 with the assistance of different alkali metal halides (NaCl, NaF and NaBr) at reduced temperatures through CVD, and characterized the properties of the films with optical microscopy, Raman microscopy, photoluminescence and atomic force microscopy. I show that alkali metal halides can reduce the growth temperature of MoS2 from 850 °C to 750 °C, and different alkali metal halides have different effects. The thickness of MoS2 synthesized with the assistance of NaCl at 750 °C is close to bulk, while the thickness of MoS2 synthesized with the assistance of NaBr and NaF at 750 °C is monolayer. However, the size of the films synthesized with the assistance of NaF at 750 °C is much smaller than that with NaBr, indicating that NaBr is the most suitable precursor that can be used to lower the reaction temperature while maintaining the crystalline quality at the investigated conditions. By demonstrating a means to reduce the CVD growth temperature, this work has a potential to advance synthesis of MoS2 on temperature-sensitive substrates.

M.S., Materials Science and Engineering – Drexel University, 2018

Advisors/Committee Members: May, Steven, 1980-, Spanier, Jonathan E., College of Engineering.

Subjects/Keywords: Materials science; Metal halides; Chemical vapor deposition

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APA (6^th Edition):

Chen, Z. (2018). The effect of metal halides on MoS2 growth by chemical vapor deposition. (Thesis). Drexel University. Retrieved from https://idea.library.drexel.edu/islandora/object/idea%3A8238

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Chen, Zizhao. “The effect of metal halides on MoS2 growth by chemical vapor deposition.” 2018. Thesis, Drexel University. Accessed January 16, 2021. https://idea.library.drexel.edu/islandora/object/idea%3A8238.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Chen, Zizhao. “The effect of metal halides on MoS2 growth by chemical vapor deposition.” 2018. Web. 16 Jan 2021.

Vancouver:

Chen Z. The effect of metal halides on MoS2 growth by chemical vapor deposition. [Internet] [Thesis]. Drexel University; 2018. [cited 2021 Jan 16]. Available from: https://idea.library.drexel.edu/islandora/object/idea%3A8238.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Z. The effect of metal halides on MoS2 growth by chemical vapor deposition. [Thesis]. Drexel University; 2018. Available from: https://idea.library.drexel.edu/islandora/object/idea%3A8238

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Washington State University

19. [No author]. Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers .

Degree: 2003, Washington State University

URL: http://hdl.handle.net/2376/158

Subjects/Keywords: Plasma-enhanced chemical vapor deposition.; Fuel cells.; Metal organic chemical vapor deposition.

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APA (6^th Edition):

author], [. (2003). Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers . (Thesis). Washington State University. Retrieved from http://hdl.handle.net/2376/158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

author], [No. “Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers .” 2003. Thesis, Washington State University. Accessed January 16, 2021. http://hdl.handle.net/2376/158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

author], [No. “Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers .” 2003. Web. 16 Jan 2021.

Vancouver:

author] [. Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers . [Internet] [Thesis]. Washington State University; 2003. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2376/158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

author] [. Plasma enhanced metal organic chemical vapor deposition (pemocvd) of catalytic coatings for fuel cell reformers . [Thesis]. Washington State University; 2003. Available from: http://hdl.handle.net/2376/158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Illinois – Urbana-Champaign

20. Kesler, Benjamin. Antimonide-based type-II superlattices for infrared detection.

Degree: MS, 1200, 2012, University of Illinois – Urbana-Champaign

URL: http://hdl.handle.net/2142/34523

► The vast array of applications for the detection of mid- to long-wave infrared radiation has spurred continuous interest in new and novel technologies to replace… (more)

▼ The vast array of applications for the detection of mid- to long-wave infrared radiation has spurred continuous interest in new and novel technologies to replace the current generation of state-of-the-art devices such as mercury cadmium telluride (MCT) detectors. One of the more promising alternatives is the type-II superlattice (T2SL), which was first proposed for infrared detection in 1978 and has been theoretically predicted to perform better than any MCT detector. Some advantages of the T2SL are its vastly improved electrical properties, material growth quality and cost, and the large number of degrees of freedom in tailoring the band structure to maximize performance at any given wavelength when compared to MCT detectors. However, the performance of T2SLs has been limited due to growth and fabrication problems, though the past decade has seen devices demonstrated with less than an order of magnitude difference in performance metrics when compared to commercially available MCT products, which is very promising for this material system. This thesis presents only the second generation of T2SL devices grown via metal-organic chemical vapor deposition (MOCVD), and the first generation of devices grown on an InAs substrate by either molecular beam epitaxy (MBE) or MOCVD, an important fact for flip-chip bonding applications due to the lower absorption coefficient of InAs in the infrared when compared to the more common GaSb substrates. MOCVD is the preferred growth method in the industry, when available, due to its fast deposition rates with only a minimal sacrifice in growth precision when compared to MBE, so it is imperative that MOCVD T2SL devices quickly demonstrate performances similar to MBE grown T2SLs. A peak specific detectivity of 7.62 x 10⁹ Jones at approximately 8 um is reported, a 4.8 times increase from the value of 1.6 x 10⁹ Jones for the first MOCVD grown T2SL (which was grown on a GaSb substrate). This thesis also addresses the reduction and elimination of surface leakage current, a dark current method that can be debilitating to device performance if not properly addressed. Promising results are achieved through the use of an ammonium sulfide soaking solution. In one instance, an almost one order of magnitude reduction of dark current densities is achieved using a neutralized ammonium sulfide solution, indicating that surface passivation is an important and necessary processing step. Future improvements, such as the usage of an encapsulating layer of polyimide or silicon nitride, are suggested in order to maintain the integrity of the ammonium sulfide passivation scheme and to physically protect the device itself. Advisors/Committee Members: Chuang, Shun-Lien (advisor).

Subjects/Keywords: Detector; infrared; infrared detection; type-II superlattice (T2SL); metalorganic chemical vapor deposition (MOCVD)

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APA (6^th Edition):

Kesler, B. (2012). Antimonide-based type-II superlattices for infrared detection. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/34523

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Kesler, Benjamin. “Antimonide-based type-II superlattices for infrared detection.” 2012. Thesis, University of Illinois – Urbana-Champaign. Accessed January 16, 2021. http://hdl.handle.net/2142/34523.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Kesler, Benjamin. “Antimonide-based type-II superlattices for infrared detection.” 2012. Web. 16 Jan 2021.

Vancouver:

Kesler B. Antimonide-based type-II superlattices for infrared detection. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2012. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2142/34523.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kesler B. Antimonide-based type-II superlattices for infrared detection. [Thesis]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/34523

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Lu, Yun. III-V compound semiconductor selective area epitaxy on silicon substrates.

Degree: MS, 1200, 2014, University of Illinois – Urbana-Champaign

URL: http://hdl.handle.net/2142/49642

► In electronics, the integration of III-V compound semiconductor materials and silicon is a way to solve the silicon feature size limit and power consumption problems… (more)

Subjects/Keywords: selective area epitaxy; III-V material; silicon substrate; monolithic device; Metal organic chemical vapor deposition (MOCVD); Molecular beam epitaxy (MBE)

…surface metal contaminants can be suppressed to negligible levels by proper chemical treatments… …from pure Si to pure Ge. The growth was carried out in an ultra-high vacuum chemical vapor… …and the potential of using optical links to replace the metal interconnection in VLSI drive… …deposition on the masked region during the epitaxial growth. Epitaxial layers locally grow on the… …published a paper on selective MOCVD growth of compound semiconductor on Si Substrates [12…

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APA (6^th Edition):

Lu, Y. (2014). III-V compound semiconductor selective area epitaxy on silicon substrates. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/49642

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Lu, Yun. “III-V compound semiconductor selective area epitaxy on silicon substrates.” 2014. Thesis, University of Illinois – Urbana-Champaign. Accessed January 16, 2021. http://hdl.handle.net/2142/49642.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Lu, Yun. “III-V compound semiconductor selective area epitaxy on silicon substrates.” 2014. Web. 16 Jan 2021.

Vancouver:

Lu Y. III-V compound semiconductor selective area epitaxy on silicon substrates. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2014. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2142/49642.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu Y. III-V compound semiconductor selective area epitaxy on silicon substrates. [Thesis]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/49642

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

22. Norris, Kate Jeanne. Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices.

Degree: Electrical Engineering, 2015, University of California – Santa Cruz

URL: http://www.escholarship.org/uc/item/3b20674g

► In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From… (more)

▼ In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From our smart phones to semiconductor-based energy conversion, semiconductors touch every aspect of our lives. With this thesis I hope to expand human knowledge of semiconductor thermoelectric devices and resistive switching devices through experimentation with materials growth and subsequent materials characterization. Metal organic chemical vapor deposition (MOCVD) was the primary method of materials growth utilized in these studies. Additionally, plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD),ion beam sputter deposition, reactive sputter deposition and electron-beam (e-beam) evaporation were also used in this research for device fabrication. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), and Electron energy loss spectroscopy (EELS) were the primary characterization methods utilized for this research. Additional device and materials characterization techniques employed include: current-voltage measurements, thermoelectric measurements, x-ray diffraction (XRD), reflection absorption infra-red spectroscopy (RAIRS), atomic force microscopy (AFM), photoluminescence (PL), and raman spectroscopy.As society has become more aware of its impact on the planet and its limited resources, there has been a push toward developing technologies to sustainably produce the energy we need. Thermoelectric devices convert heat directly into electricity. Thermoelectric devices have the potential to save huge amounts of energy that we currently waste as heat, if we can make them cost-effective. Semiconducting thin films and nanowires appear to be promising avenues of research to attain this goal. Specifically, in this work we will explore the use of ErSb thin films as well as Si and InP nanowire networks for thermoelectric applications. First we will discuss the growth of erbium monoantimonide (ErSb) thin films with thermal conductivities close to or slightly smaller than the alloy limit of the two ternary alloy hosts. Second we consider an ex-situ monitoring technique based on glancing-angle infrared-absorption used to determine small amounts of erbium antimonide (ErSb) deposited on an indium antimonide (InSb) layer, a concept for thermoelectric devices to scatter phonons. Thirdly we begin our discussion of nanowires with the selective area growth (SAG) of single crystalline indium phosphide (InP) nanopillars on an array of template segments composed of a stack of gold and amorphous silicon. Our approach enables flexible and scalable nanofabrication using industrially proven tools and a wide range of semiconductors on various non-semiconductor substrates. Then we examine the use of graphene to promote the growth of nanowire networks on flexible copper foil leading to the testing of nanowire network devices for thermoelectric applications and the concept of multi-stage devices. We present the ability to tailor…

Subjects/Keywords: Materials Science; Electrical engineering; Metal Organic Chemical Vapor Deposition; Resistive switching devices; Thermoelectric devices; Transmission Electron Microscopy

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APA (6^th Edition):

Norris, K. J. (2015). Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices. (Thesis). University of California – Santa Cruz. Retrieved from http://www.escholarship.org/uc/item/3b20674g

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Norris, Kate Jeanne. “Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices.” 2015. Thesis, University of California – Santa Cruz. Accessed January 16, 2021. http://www.escholarship.org/uc/item/3b20674g.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Norris, Kate Jeanne. “Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices.” 2015. Web. 16 Jan 2021.

Vancouver:

Norris KJ. Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices. [Internet] [Thesis]. University of California – Santa Cruz; 2015. [cited 2021 Jan 16]. Available from: http://www.escholarship.org/uc/item/3b20674g.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Norris KJ. Materials Growth and Characterization of Thermoelectric and Resistive Switching Devices. [Thesis]. University of California – Santa Cruz; 2015. Available from: http://www.escholarship.org/uc/item/3b20674g

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

23. Pagni, Olivier Demeno. On the mocvd growth of ZnO.

Degree: Faculty of Science, 2004, University of Port Elizabeth

URL: http://hdl.handle.net/10948/382

► Zinc oxide (ZnO) is a II-VI semiconductor material that offers tremendous potential as a light emitter in the blue-to-UV range. It has a wurtzite structure,… (more)

▼ Zinc oxide (ZnO) is a II-VI semiconductor material that offers tremendous potential as a light emitter in the blue-to-UV range. It has a wurtzite structure, and a direct band gap that can be tuned from 3.0 to 4.0 eV by alloying with Cd or Mg, respectively. In this work, ZnO thin films were grown by metalorganic chemical vapor deposition (MOCVD) on n-Si 2 ° off (100), amorphous glass, n-GaAs (100), and c-plane sapphire substrates. Diethyl zinc (DEZn) and tert-butanol (TBOH) were chosen as precursors. For the first time, Second Harmonic Generation Imaging was applied to the mapping of ZnO epilayers. The images obtained highlighted the polycrystalline character of the thin films, and provided insight as to the growth mode of ZnO on Si. The influence of substrate temperature on the structural properties of the epilayers was investigated by X-ray diffraction and optical microscopy. Grain sizes as high as 54 nm were measured. The optimum temperature range for this system proved to be 450 – 500 °C. The influence of the VI:II ratio during growth on the optical properties of the epilayers was studied by UV-vis-near IR spectroscopy. The lowest Urbach tail E0 parameter was measured for material grown at a VI:II ratio of 18:1. The films’ free electron concentration was shown to decrease by over two orders of magnitude, from 1019 to 1017 cm-3, as the VI:II ratio increased from 10 to 60:1. This decrease in carrier concentration with rising VI:II ratio was paralleled to the surge at 12 K of a photoluminescence (PL) emission band characteristic of p-type ZnO. The band gap energies extracted from room temperature transmission spectra ranged between 3.35 and 3.38 eV, in agreement with the value of 3.35 eV measured by room temperature PL. Moreover, variable temperature PL spectra were recorded between 12 and 298 K on ZnO grown on Si. The 12 K spectrum was dominated by a donor-bound exciton (D°X) at 3.36 eV, while the 298 K scan displayed strong free exciton emission (FX) at 3.29 eV. The width of the D°X band proved to be as narrow as 7 meV. The intensity ratio between the room temperature near-band edge emission and the defect-related green band was as high as 28:1, highlighting the optical quality of the layers deposited in this work. The electrical properties of the thin films were studied by Hall measurements (van der Pauw configuration), and a maximum room temperature mobility of 11 cm2/Vs was recorded. Furthermore, a palladium (Pd) Schottky barrier diode on ZnO was fabricated. The barrier height and ideality factor were calculated from current–voltage measurements to be 0.83 eV and 1.6, respectively. The capacitance–voltage curve of the diode yielded a carrier concentration in the depletion region of 8·1017 cm-3. This study has shown that the optical and electrical properties of ZnO depend strongly on the growth conditions employed. A suitable choice of growth parameters can yield high quality ZnO that may be used for various devices. Keywords: Hall, MOCVD, optical spectroscopy, photoluminescence, Schottky barrier diode, SH…

Subjects/Keywords: Zinc oxide thin films; Metal organic chemical vapor deposition

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APA (6^th Edition):

Pagni, O. D. (2004). On the mocvd growth of ZnO. (Thesis). University of Port Elizabeth. Retrieved from http://hdl.handle.net/10948/382

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Pagni, Olivier Demeno. “On the mocvd growth of ZnO.” 2004. Thesis, University of Port Elizabeth. Accessed January 16, 2021. http://hdl.handle.net/10948/382.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Pagni, Olivier Demeno. “On the mocvd growth of ZnO.” 2004. Web. 16 Jan 2021.

Vancouver:

Pagni OD. On the mocvd growth of ZnO. [Internet] [Thesis]. University of Port Elizabeth; 2004. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10948/382.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pagni OD. On the mocvd growth of ZnO. [Thesis]. University of Port Elizabeth; 2004. Available from: http://hdl.handle.net/10948/382

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Nelson Mandela Metropolitan University

24. Miya, Senzo Simo. Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices.

Degree: PhD, Faculty of Science, 2013, Nelson Mandela Metropolitan University

URL: http://hdl.handle.net/10948/d1020866

► The importance of infrared (IR) technology (for detection in the 3-5 μm and 8-14 μm atmospheric windows) has spread from military applications to civilian applications… (more)

▼ The importance of infrared (IR) technology (for detection in the 3-5 μm and 8-14 μm atmospheric windows) has spread from military applications to civilian applications since World War II. The commercial IR detector market in these wavelength ranges is dominated by mercury cadmium telluride (MCT) alloys. The use of these alloys has, however, been faced with technological difficulties. One of the materials that have been tipped to be suitable to replace MCT is InAs/InxGa1-xSb strained layer superlattices (SLS’s). Atmospheric pressure metal-organic vapour phase epitaxy (MOVPE) has been used to grow InAs/GaSb strained layer superlattices (SLS’s) at 510 °C in this study. This is a starting point towards the development of MOVPE InAs/InxGa1-xSb SLS’s using the same system. Before the SLS’s could be attempted, the growth parameters for GaSb were optimised. Growth parameters for InAs were taken from reports on previous studies conducted using the same reactor. Initially, trimethylgallium, a source that has been used extensively in the same growth system for the growth of GaSb and InxGa1-xSb was intended to be used for gallium species. The high growth rates yielded by this source were too large for the growth of SLS structures, however. Thus, triethylgallium (rarely used for atmospheric pressure MOVPE) was utilized. GaSb layers (between 1 and 2 μm thick) were grown at two different temperatures (550 °C and 510 °C) with a varying V/III ratio. A V/III ratio of 1.5 was found to be optimal at 550 °C. However, the low incorporation efficiency of indium into GaSb at this temperature was inadequate to obtain InxGa1-xSb with an indium mole fraction (x) of around 0.3, which had previously been reported to be optimal for the performance of InAs/InxGa1-xSb SLS’s, due to the maximum splitting of the valence mini bands for this composition. The growth temperature was thus lowered to 510 °C. This resulted in an increase in the optimum V/III ratio to 1.75 for GaSb and yielded much higher incorporation efficiencies of indium in InxGa1-xSb. However, this lower growth temperature also produced poorer surface morphologies for both the binary and ternary layers, due to the reduced surface diffusion of the adsorbed species. An interface control study during the growth of InAs/GaSb SLS’s was subsequently conducted, by investigating the influence of different gas switching sequences on the interface type and quality. It was noted that the growth of SLS’s without any growth interruptions at the interfaces leads to tensile strained SLS’s (GaAs-like interfaces) with a rather large lattice mismatch. A 5 second flow of TMSb over the InAs surface and a flow of H2 over GaSb surface yielded compressively strained SLS’s. Flowing TMIn for 1 second and following by a flow of TMSb for 4 seconds over the GaSb surface, while flowing H2 for 5 seconds over the InAs surface, resulted in SLS’s with GaAs-like interfacial layers and a reduced lattice mismatch. Temperature gradients across the surface of the susceptor led to SLS’s with different structural quality.… Advisors/Committee Members: Botha, J R Prof, Wagener, V Dr.

Subjects/Keywords: Gallium arsenide semiconductors; Organometallic compounds; Compound semiconductors; Metal organic chemical vapor deposition; Superlattices as materials; Epitaxy

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APA (6^th Edition):

Miya, S. S. (2013). Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices. (Doctoral Dissertation). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/d1020866

Chicago Manual of Style (16^th Edition):

Miya, Senzo Simo. “Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices.” 2013. Doctoral Dissertation, Nelson Mandela Metropolitan University. Accessed January 16, 2021. http://hdl.handle.net/10948/d1020866.

MLA Handbook (7^th Edition):

Miya, Senzo Simo. “Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices.” 2013. Web. 16 Jan 2021.

Vancouver:

Miya SS. Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices. [Internet] [Doctoral dissertation]. Nelson Mandela Metropolitan University; 2013. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10948/d1020866.

Council of Science Editors:

Miya SS. Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices. [Doctoral Dissertation]. Nelson Mandela Metropolitan University; 2013. Available from: http://hdl.handle.net/10948/d1020866

Rutgers University

25. Zhang, Jingming. Design and synthesis of metal organic frameworks for CO₂ separation and catalysis.

Degree: Chemistry and Chemical Biology, 2013, Rutgers University

URL: https://rucore.libraries.rutgers.edu/rutgers-lib/42094/

Subjects/Keywords: Carbon dioxide mitigation; Metal organic chemical vapor deposition

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APA (6^th Edition):

Zhang, J. (2013). Design and synthesis of metal organic frameworks for CO₂ separation and catalysis. (Thesis). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/42094/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Zhang, Jingming. “Design and synthesis of metal organic frameworks for CO₂ separation and catalysis.” 2013. Thesis, Rutgers University. Accessed January 16, 2021. https://rucore.libraries.rutgers.edu/rutgers-lib/42094/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Zhang, Jingming. “Design and synthesis of metal organic frameworks for CO₂ separation and catalysis.” 2013. Web. 16 Jan 2021.

Vancouver:

Zhang J. Design and synthesis of metal organic frameworks for CO₂ separation and catalysis. [Internet] [Thesis]. Rutgers University; 2013. [cited 2021 Jan 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/42094/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang J. Design and synthesis of metal organic frameworks for CO₂ separation and catalysis. [Thesis]. Rutgers University; 2013. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/42094/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Indian Institute of Science

26. Jena, Anirudha. Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications.

Degree: PhD, Faculty of Science, 2018, Indian Institute of Science

URL: http://etd.iisc.ac.in/handle/2005/3233

Subjects/Keywords: Transition Metal Oxides; Metalorganic Chemical Vapor Deposition (MOCVD); Metal Oxide/Composite Nanostructures; Nanomaterials; Nanostructured Transition Metal Oxides - Synthesis; Cobalt Oxide Nanostructures; Nanostructured Titanium Dioxide; Cobalt Oxide Thin Films; Nickel Oxide/Nanocomposites; Metal-organic Complexes; Nanotechnology

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APA (6^th Edition):

Jena, A. (2018). Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/3233

Chicago Manual of Style (16^th Edition):

Jena, Anirudha. “Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications.” 2018. Doctoral Dissertation, Indian Institute of Science. Accessed January 16, 2021. http://etd.iisc.ac.in/handle/2005/3233.

MLA Handbook (7^th Edition):

Jena, Anirudha. “Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications.” 2018. Web. 16 Jan 2021.

Vancouver:

Jena A. Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2018. [cited 2021 Jan 16]. Available from: http://etd.iisc.ac.in/handle/2005/3233.

Council of Science Editors:

Jena A. Development of Metal Oxide/Composite Nanostructures via Microwave-Assisted Chemical Route and MOCVD : Study of their Electrochemical, Catalytic and Sensing Applications. [Doctoral Dissertation]. Indian Institute of Science; 2018. Available from: http://etd.iisc.ac.in/handle/2005/3233

Harvard University

27. Tong, Liuchuan. Development of Organic Molecules for Aqueous Redox Flow Battery.

Degree: PhD, 2018, Harvard University

URL: http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182

►

The cost of renewable energy sources such as solar and wind has dropped significantly such that the main barrier for a wider adoption is intermittency.… (more)

▼

The cost of renewable energy sources such as solar and wind has dropped significantly such that the main barrier for a wider adoption is intermittency. The unsynchronized power supply from renewables and the power demand from human activity limit the reliance on renewables. Energy storage is the key enabler in accelerating the integration of renewables. Aqueous organic redox flow battery (AORFB) offers a potential cost-effective solution to the energy storage. AORFB works by storing liquid electrolyte outside out the electrochemical conversion stack, decoupling battery power and capacity. Redox-active organic molecules are used as electrolyte in the battery. Properties of organic molecules such as solubility, reduction potential, and stability are tunable through structural modification. Chapter 2 examines the optical properties of anthraquinone-disulfonic acid (AQDS) flow battery system, and correlates its molecular complexation with electrochemical performance. UV-Vis spectroscopy is demonstrated as a powerful tool to study the quinone chemistry in redox flow battery systems. By incorporating AQDS complexation, a more accurate modelling of battery voltage is achieved. In addition, the mechanistic investigation of the degradation of anthraquinone-based flow battery is presented by using 2,6-dihydroxyanthraquinone (DHAQ) in alkaline solution as a model system. Through high-resolution LC-MS, NMR, and synthesis validation, the DHAQ degradation mechanism and the proposed remedy are discussed. This chapter demonstrates that how anthraquinones degrade in alkaline solution during electrochemical cycling, and paves the path for the rational design of next generation redox-active organic molecules. Chapter 3 introduces 2,5-dihydroxybenzoquinone (DHBQ) as a new candidate negolyte molecule for alkaline redox flow battery. The stability, kinetics, cycling performance, and capacity retention are all characterized. Various synthetic strategies to improve the stability of DHBQ are also discussed. The structural modification demonstrates that organic molecules can be tuned with different functional groups to improve the battery performance. Chapter 4 explores the idea of using a fused quinone as both the posolyte and negolyte material. The electrochemical behavior of fused quinones will be presented and the degradation mechanism will be discussed. Adsorbed and solid batteries with fused quinone are demonstrated. Chapter 5 presents the synthesis of volatile, thermally stable, and reactive coinage metal 5,5-bicyclic amidinates for chemical vapor deposition (CVD). X-ray structures of the gold, silver and copper amidinates will be presented together with thermalgravimetric analysis. Metallic films with low to none carbon content are obtained through CVD of the silver and gold amidinates. This chapter demonstrates the development of these CVD precursors and offers the opportunity for synthesizing other stable metal precursors which are previously inaccessible with other ligands.

Chemistry and Chemical Biology

Advisors/Committee Members: Betley, Theodore (advisor).

Subjects/Keywords: Flow Battery; Organic molecules; Chemical Vapor Deposition; Organic Redox Flow Battery

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APA (6^th Edition):

Tong, L. (2018). Development of Organic Molecules for Aqueous Redox Flow Battery. (Doctoral Dissertation). Harvard University. Retrieved from http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182

Chicago Manual of Style (16^th Edition):

Tong, Liuchuan. “Development of Organic Molecules for Aqueous Redox Flow Battery.” 2018. Doctoral Dissertation, Harvard University. Accessed January 16, 2021. http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182.

MLA Handbook (7^th Edition):

Tong, Liuchuan. “Development of Organic Molecules for Aqueous Redox Flow Battery.” 2018. Web. 16 Jan 2021.

Vancouver:

Tong L. Development of Organic Molecules for Aqueous Redox Flow Battery. [Internet] [Doctoral dissertation]. Harvard University; 2018. [cited 2021 Jan 16]. Available from: http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182.

Council of Science Editors:

Tong L. Development of Organic Molecules for Aqueous Redox Flow Battery. [Doctoral Dissertation]. Harvard University; 2018. Available from: http://nrs.harvard.edu/urn-3:HUL.InstRepos:41127182

Indian Institute of Science

28. Ail, Ujwala. Thin Film Semiconducting Metal Oxides By Nebulized Spray Pyrolysis And MOCVD, For Gas-Sensing Applications.

Degree: PhD, Faculty of Science, 2013, Indian Institute of Science

URL: http://etd.iisc.ac.in/handle/2005/1970

► The atmosphere we live in contains various kinds of chemical species, natural and artificial, some of which are vital to our life, while many others… (more)

▼ The atmosphere we live in contains various kinds of chemical species, natural and artificial, some of which are vital to our life, while many others are more or less harmful. The vital gases like oxygen, humidity have to be kept at adequate levels in the living atmosphere, whereas the hazardous and toxic gases like hydrocarbons, H2, volatile organic compounds, CO2, CO, NOx, SO2, NH3, O3 etc should be controlled to be under the designated levels. The measurement technology necessary for monitoring these gases has emerged, particularly as organic fuels and other chemicals have become essential in domestic and industrial life. In addition to other applications, environmental pollution monitoring and control has become a fundamental need in the recent years. Therefore, there has been an extensive effort to develop high-performance chemical sensors of small size, rugged construction, light weight, true portability, and with better sensing characteristics such as high sensitivity, fast response and recovery times, low drift, and high degree of specificity. Among the various types of gas sensors studied, solid state gas sensors based on semiconducting metal oxides are well established, due to their advantages over the other types, and hence cover a wide range of applications. However, the widespread application of these sensors has been hindered by limited sensitivity and selectivity. Various strategies have been employed in order to improved the performance parameters of these sensors. This thesis work has two major investigations, which form two parts of the thesis. The first part of this thesis describes the efforts to improve the sensing behaviour of one of the extensively studied metal oxide gas sensors, namely, ZnO, through a novel, ultrasonic-nebulised spray pyrolyis synthesis method, employing an aqueous combustion mixture (NSPACM). The second part of the thesis deals with the ideal of gas detection by optical means through the reversible phase transformation between V2O5 and V6O13 deposited by metalorganic chemical vapor deposition(MOCVD). The introductory chapter I deals with basics of chemical sensors and the characteristic sensing parameters. Different types of gas sensors based on the phenomena employed for sensing are discussed, with an emphasis on semiconducting metal oxide gas sensors. The importance of material selection for solid state gas sensors, depending on the purpose, location, and conditions of operation are discussed, supporting the assertion that semiconducting metal oxides are better suited to fulfill all the requirements of modern gas sensors. Some of the effective methods to improve performance parameters including the influence of grain size, microstructure, and surface doping are described., followed by the motivation of the present thesis. The part I of the thesis is based on the resistive semiconducting metal oxide, where the system investigated was ZnO. Part one comprises Chapters 2, 3 and 4. In Chapter 2, a brief introduction to the material properties of ZnO, followed by various… Advisors/Committee Members: Umarji, A M (advisor).

Subjects/Keywords: Metalorganic Chemical Vapor Deposition (MOCVD); Nebulized Spray Pyrolysis; Thin Films; Gas Sensors; Metal Oxide Gas Sensors; Zinc Oxide Thin Films; Thin Film Deposition; Zno Thin Films; Zinc Oxide Thin Films; Vanadium Oxide; Materials Science

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APA (6^th Edition):

Ail, U. (2013). Thin Film Semiconducting Metal Oxides By Nebulized Spray Pyrolysis And MOCVD, For Gas-Sensing Applications. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/1970

Chicago Manual of Style (16^th Edition):

Ail, Ujwala. “Thin Film Semiconducting Metal Oxides By Nebulized Spray Pyrolysis And MOCVD, For Gas-Sensing Applications.” 2013. Doctoral Dissertation, Indian Institute of Science. Accessed January 16, 2021. http://etd.iisc.ac.in/handle/2005/1970.

MLA Handbook (7^th Edition):

Ail, Ujwala. “Thin Film Semiconducting Metal Oxides By Nebulized Spray Pyrolysis And MOCVD, For Gas-Sensing Applications.” 2013. Web. 16 Jan 2021.

Vancouver:

Ail U. Thin Film Semiconducting Metal Oxides By Nebulized Spray Pyrolysis And MOCVD, For Gas-Sensing Applications. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2013. [cited 2021 Jan 16]. Available from: http://etd.iisc.ac.in/handle/2005/1970.

Council of Science Editors:

Ail U. Thin Film Semiconducting Metal Oxides By Nebulized Spray Pyrolysis And MOCVD, For Gas-Sensing Applications. [Doctoral Dissertation]. Indian Institute of Science; 2013. Available from: http://etd.iisc.ac.in/handle/2005/1970

University of Texas – Austin

29. Liao, Wen. Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition.

Degree: PhD, Chemical engineering, 2016, University of Texas – Austin

URL: http://hdl.handle.net/2152/39740

► As feature sizes in microelectronic devices decrease, ultra-thin (< 3 nm) and smooth diffusion barriers are required to prevent copper from diffusing into the surrounding… (more)

▼ As feature sizes in microelectronic devices decrease, ultra-thin (< 3 nm) and smooth diffusion barriers are required to prevent copper from diffusing into the surrounding dielectric layers and to limit electron scattering at the copper-liner surface. Chemical vapor deposition (CVD) is one route to these barriers. The inhibitor gas adsorbs on metal nanoparticles, forces additional nucleation and enhances nucleation density. Island growth combined with a sparse nucleation density leads to film roughness and the deposition of more metal mass than is needed to form a film of sufficient thickness to function as a copper diffusion barrier when compared to a uniformly-thick metal film. In the first study, a higher nucleation density and smoother Ru film is achieved in CVD with CO addition during growth. CO competes with Ru3(CO)12 for free hydroxyl adsorption. The CO addition to Ru3(CO)12 deposition at proper timing and effective partial pressure reduces the film growth rate, surface roughness and nanocrystalline grain size by chemical vapor deposition. The second study reports the use of ammonia to inhibit the growth of previously-nucleated ruthenium islands and force the nucleation of additional islands such that thinner films form as the islands coalesce with continued growth using Ru3(CO)12. The ammonia addition reduces the film nanocrystallinity and the films appear X-ray amorphous with the highest ammonia partial pressure during film deposition. In the third study, films grown from Ru(tBu-Me-amd)2(CO)2 form a 2D wetting layer before 3D particle growth is observed. CO and ammonia addition to the gas phase during film growth from Ru(tBu-Me-amd)2(CO)2 leads to smoother films by inducing surface reconstructions during the film growth; these gases also lead to films with lower resistivity and lower crystalline character. Overall, this research is to understand how blocking adsorbed moieties effect the nucleation of metals on a silica substrate, and to discover the principles leading to ultra-thin and smooth metallic films in CVD. Advisors/Committee Members: Ekerdt, John G. (advisor), Korgel, Brian A (committee member), Hwang, Gyeong S (committee member), Hildebrandt Ruiz, Lea (committee member), Ferreira, Paulo (committee member).

Subjects/Keywords: Chemical vapor deposition; Ruthenium; Nucleation; Ultra-thin metal film

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APA (6^th Edition):

Liao, W. (2016). Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/39740

Chicago Manual of Style (16^th Edition):

Liao, Wen. “Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition.” 2016. Doctoral Dissertation, University of Texas – Austin. Accessed January 16, 2021. http://hdl.handle.net/2152/39740.

MLA Handbook (7^th Edition):

Liao, Wen. “Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition.” 2016. Web. 16 Jan 2021.

Vancouver:

Liao W. Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2016. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2152/39740.

Council of Science Editors:

Liao W. Controlling nucleation and growth of ultra-thin ruthenium films in chemical vapor deposition. [Doctoral Dissertation]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/39740

Indian Institute of Science

30. Gairola, Anshita. Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics.

Degree: PhD, Faculty of Science, 2013, Indian Institute of Science

URL: http://etd.iisc.ac.in/handle/2005/2104

► The work carried out as a part of this thesis has been focussed on understanding different aspects of the chemical vapor deposition process namely, ALD… (more)

Subjects/Keywords: Chemical Vapor Deposition (CVD); Dielectrics; Thin Films; Atomic Layer Deposition (ALD); Titanium Oxide Thin Films; Metalorganic Chemical Vapor Deposition; Metaloxide Thin Films; Thin Film Deposition; Physical Vapor Deposition (PVD); Titanium Oxide; Titanium Dioxide Film; MOCVD; Materials Science

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Gairola, A. (2013). Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2104

Chicago Manual of Style (16^th Edition):

Gairola, Anshita. “Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics.” 2013. Doctoral Dissertation, Indian Institute of Science. Accessed January 16, 2021. http://etd.iisc.ac.in/handle/2005/2104.

MLA Handbook (7^th Edition):

Gairola, Anshita. “Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics.” 2013. Web. 16 Jan 2021.

Vancouver:

Gairola A. Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2013. [cited 2021 Jan 16]. Available from: http://etd.iisc.ac.in/handle/2005/2104.

Council of Science Editors:

Gairola A. Studies On CVD And ALD Of Thin Films Of Substituted And Composite Metal Oxides, Including Potential High-k Dielectrics. [Doctoral Dissertation]. Indian Institute of Science; 2013. Available from: http://etd.iisc.ac.in/handle/2005/2104

Open Access Theses and Dissertations