Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for subject:(MOVPE). Showing records 1 – 30 of 57 total matches.

[1] [2]

Search Limiters

Last 2 Years | English Only

Degrees

Country

▼ Search Limiters

1. Journot, Timotée. Epitaxie van der Waals de GaN sur graphène pour des applications en photonique : van der Waals epitaxy of GaN on graphene for photonics.

Degree: Docteur es, Matériaux, Mécanique, Génie civil, Electrochimie, 2018, Université Grenoble Alpes (ComUE)

De par ses propriétés physiques remarquables, le GaN est un matériau très attrayant pour la fabrication de composants photoniques. Sa synthèse est en revanche très… (more)

Subjects/Keywords: GaN; Epvom; Graphène; Movpe; 530

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Journot, T. (2018). Epitaxie van der Waals de GaN sur graphène pour des applications en photonique : van der Waals epitaxy of GaN on graphene for photonics. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2018GREAI078

Chicago Manual of Style (16th Edition):

Journot, Timotée. “Epitaxie van der Waals de GaN sur graphène pour des applications en photonique : van der Waals epitaxy of GaN on graphene for photonics.” 2018. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed September 20, 2020. http://www.theses.fr/2018GREAI078.

MLA Handbook (7th Edition):

Journot, Timotée. “Epitaxie van der Waals de GaN sur graphène pour des applications en photonique : van der Waals epitaxy of GaN on graphene for photonics.” 2018. Web. 20 Sep 2020.

Vancouver:

Journot T. Epitaxie van der Waals de GaN sur graphène pour des applications en photonique : van der Waals epitaxy of GaN on graphene for photonics. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2018. [cited 2020 Sep 20]. Available from: http://www.theses.fr/2018GREAI078.

Council of Science Editors:

Journot T. Epitaxie van der Waals de GaN sur graphène pour des applications en photonique : van der Waals epitaxy of GaN on graphene for photonics. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2018. Available from: http://www.theses.fr/2018GREAI078

2. 中俣, 徹. ナノフォトニックデバイス開発のためのMOVPE法によるZnOナノロッドの選択成長.

Degree: 2017, The University of Tokyo / 東京大学

Subjects/Keywords: ZnO; MOVPE; ナノロッド

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

中俣, . (2017). ナノフォトニックデバイス開発のためのMOVPE法によるZnOナノロッドの選択成長. (Thesis). The University of Tokyo / 東京大学. Retrieved from http://hdl.handle.net/2261/25821

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

中俣, 徹. “ナノフォトニックデバイス開発のためのMOVPE法によるZnOナノロッドの選択成長.” 2017. Thesis, The University of Tokyo / 東京大学. Accessed September 20, 2020. http://hdl.handle.net/2261/25821.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

中俣, 徹. “ナノフォトニックデバイス開発のためのMOVPE法によるZnOナノロッドの選択成長.” 2017. Web. 20 Sep 2020.

Vancouver:

中俣 . ナノフォトニックデバイス開発のためのMOVPE法によるZnOナノロッドの選択成長. [Internet] [Thesis]. The University of Tokyo / 東京大学; 2017. [cited 2020 Sep 20]. Available from: http://hdl.handle.net/2261/25821.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

中俣 . ナノフォトニックデバイス開発のためのMOVPE法によるZnOナノロッドの選択成長. [Thesis]. The University of Tokyo / 東京大学; 2017. Available from: http://hdl.handle.net/2261/25821

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. Suihkonen, Sami. Fabrication of InGaN Quantum Wells for LED Applications.

Degree: 2008, Helsinki University of Technology

In this thesis fabrication and properties of InGaN quantum wells (QWs) for light emitting diode (LED) applications is studied. Metal-organic vapor phase epitaxy (MOVPE) is… (more)

Subjects/Keywords: light emitting diodes; MOVPE; III-N materials; quantum wells; LED; MOVPE; III-N materiaalit; kvanttikaivo

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Suihkonen, S. (2008). Fabrication of InGaN Quantum Wells for LED Applications. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2008/isbn9789512292875/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Suihkonen, Sami. “Fabrication of InGaN Quantum Wells for LED Applications.” 2008. Thesis, Helsinki University of Technology. Accessed September 20, 2020. http://lib.tkk.fi/Diss/2008/isbn9789512292875/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Suihkonen, Sami. “Fabrication of InGaN Quantum Wells for LED Applications.” 2008. Web. 20 Sep 2020.

Vancouver:

Suihkonen S. Fabrication of InGaN Quantum Wells for LED Applications. [Internet] [Thesis]. Helsinki University of Technology; 2008. [cited 2020 Sep 20]. Available from: http://lib.tkk.fi/Diss/2008/isbn9789512292875/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Suihkonen S. Fabrication of InGaN Quantum Wells for LED Applications. [Thesis]. Helsinki University of Technology; 2008. Available from: http://lib.tkk.fi/Diss/2008/isbn9789512292875/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Lorraine

4. Li, Xin. Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.

Degree: Docteur es, Physique, 2015, Université de Lorraine

Le contexte de cette thèse se situe dans les nombreuses applications de sources UV tels que la stérilisation et la purification. Comparés aux sources conventionnelles,… (more)

Subjects/Keywords: VCSEL; DBR; DUV; MOVPE; III-Nitrures; VCSEL; DBR; DUV; MOVPE; III nitrides; 537.622; 621.36

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, X. (2015). Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. (Doctoral Dissertation). Université de Lorraine. Retrieved from http://www.theses.fr/2015LORR0243

Chicago Manual of Style (16th Edition):

Li, Xin. “Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2015. Doctoral Dissertation, Université de Lorraine. Accessed September 20, 2020. http://www.theses.fr/2015LORR0243.

MLA Handbook (7th Edition):

Li, Xin. “Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2015. Web. 20 Sep 2020.

Vancouver:

Li X. Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Internet] [Doctoral dissertation]. Université de Lorraine; 2015. [cited 2020 Sep 20]. Available from: http://www.theses.fr/2015LORR0243.

Council of Science Editors:

Li X. Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Doctoral Dissertation]. Université de Lorraine; 2015. Available from: http://www.theses.fr/2015LORR0243

5. Reentilä, Outi. Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures.

Degree: 2007, Helsinki University of Technology

In this work epitaxial growth and in situ characterisation of dilute nitride quantum well (QW) structures are studied. Dilute nitrides are III-V compound semiconductors with… (more)

Subjects/Keywords: MOVPE; epitaxy; quantum wells; in situ monitoring; dilute nitrides; MOVPE; epitaksia; kvanttikaivo; valmistuksenaikainen tarkkailu; laimeat nitridit

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Reentilä, O. (2007). Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2007/isbn9789512287314/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Reentilä, Outi. “Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures.” 2007. Thesis, Helsinki University of Technology. Accessed September 20, 2020. http://lib.tkk.fi/Diss/2007/isbn9789512287314/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Reentilä, Outi. “Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures.” 2007. Web. 20 Sep 2020.

Vancouver:

Reentilä O. Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures. [Internet] [Thesis]. Helsinki University of Technology; 2007. [cited 2020 Sep 20]. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512287314/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Reentilä O. Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures. [Thesis]. Helsinki University of Technology; 2007. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512287314/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

6. Mattila, Marco. Self-Assembled Indium Phosphide Nanowires.

Degree: 2007, Helsinki University of Technology

This thesis deals with the self-assembled vapor-liquid-solid (VLS) growth and properties of InP nanowires, concentrating mainly on the novel catalyst-free growth of InP nanowires using… (more)

Subjects/Keywords: nanowire; self-assembled; indium phosphide; catalyst-free; vapor-liquid-solid; VLS; MOVPE; nanolanka; itseorganisoituva; InP; katalyytitön; vapor-liquid-solid; VLS; MOVPE

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mattila, M. (2007). Self-Assembled Indium Phosphide Nanowires. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2007/isbn9789512288137/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mattila, Marco. “Self-Assembled Indium Phosphide Nanowires.” 2007. Thesis, Helsinki University of Technology. Accessed September 20, 2020. http://lib.tkk.fi/Diss/2007/isbn9789512288137/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mattila, Marco. “Self-Assembled Indium Phosphide Nanowires.” 2007. Web. 20 Sep 2020.

Vancouver:

Mattila M. Self-Assembled Indium Phosphide Nanowires. [Internet] [Thesis]. Helsinki University of Technology; 2007. [cited 2020 Sep 20]. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512288137/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mattila M. Self-Assembled Indium Phosphide Nanowires. [Thesis]. Helsinki University of Technology; 2007. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512288137/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

7. Thierry, Robin. Croissance de nanofils de ZnO et d'hétérostructures coeur-coquilles ZnO/ZnMgO par MOVPE : MOVPE growth of ZnO nanowires and ZnO/ZnMgO core-shell heterostructures.

Degree: Docteur es, Sciences et technologie industrielles, 2011, Université de Grenoble

Ce travail porte sur la croissance par MOVPE et l’étude de structures à base de nanofilsde ZnO, semi-conducteur à large bande interdite directe (3,37 eV)… (more)

Subjects/Keywords: Nanostructure; Nanofil; ZnO; Croissance; Épitaxie; MOCVD; MOVPE; Optoélectronique; LED; Nanostructure; Nanowire; Nanorod; ZnO; Growth; Epitaxial; MOCVD; MOVPE; Optoelectronic; LED

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Thierry, R. (2011). Croissance de nanofils de ZnO et d'hétérostructures coeur-coquilles ZnO/ZnMgO par MOVPE : MOVPE growth of ZnO nanowires and ZnO/ZnMgO core-shell heterostructures. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENT099

Chicago Manual of Style (16th Edition):

Thierry, Robin. “Croissance de nanofils de ZnO et d'hétérostructures coeur-coquilles ZnO/ZnMgO par MOVPE : MOVPE growth of ZnO nanowires and ZnO/ZnMgO core-shell heterostructures.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed September 20, 2020. http://www.theses.fr/2011GRENT099.

MLA Handbook (7th Edition):

Thierry, Robin. “Croissance de nanofils de ZnO et d'hétérostructures coeur-coquilles ZnO/ZnMgO par MOVPE : MOVPE growth of ZnO nanowires and ZnO/ZnMgO core-shell heterostructures.” 2011. Web. 20 Sep 2020.

Vancouver:

Thierry R. Croissance de nanofils de ZnO et d'hétérostructures coeur-coquilles ZnO/ZnMgO par MOVPE : MOVPE growth of ZnO nanowires and ZnO/ZnMgO core-shell heterostructures. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2020 Sep 20]. Available from: http://www.theses.fr/2011GRENT099.

Council of Science Editors:

Thierry R. Croissance de nanofils de ZnO et d'hétérostructures coeur-coquilles ZnO/ZnMgO par MOVPE : MOVPE growth of ZnO nanowires and ZnO/ZnMgO core-shell heterostructures. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENT099


Université de Lorraine

8. Alam, Saiful. Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert : High Indium Concentration InGaN Multi-Quantum-Well-Based Blue-Green Light-Emitting Diodes Grown on InGaN “Semi-Bulk” Buffer.

Degree: Docteur es, Physique, 2018, Université de Lorraine

Les diodes électroluminescentes (DEL) à base de GaN ont déjà été commercialisées comme solution économique d’éclairage, étant donné que les multi-puits quantiques (MQW) basés sur… (more)

Subjects/Keywords: LED; MOVPE; InGaN MQW; InGaN «semi-bulk»; LED; MOVPE; InGaN MQW; InGaN “semi-bulk” buffer; 537.54; 621.381 522

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Alam, S. (2018). Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert : High Indium Concentration InGaN Multi-Quantum-Well-Based Blue-Green Light-Emitting Diodes Grown on InGaN “Semi-Bulk” Buffer. (Doctoral Dissertation). Université de Lorraine. Retrieved from http://www.theses.fr/2018LORR0050

Chicago Manual of Style (16th Edition):

Alam, Saiful. “Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert : High Indium Concentration InGaN Multi-Quantum-Well-Based Blue-Green Light-Emitting Diodes Grown on InGaN “Semi-Bulk” Buffer.” 2018. Doctoral Dissertation, Université de Lorraine. Accessed September 20, 2020. http://www.theses.fr/2018LORR0050.

MLA Handbook (7th Edition):

Alam, Saiful. “Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert : High Indium Concentration InGaN Multi-Quantum-Well-Based Blue-Green Light-Emitting Diodes Grown on InGaN “Semi-Bulk” Buffer.” 2018. Web. 20 Sep 2020.

Vancouver:

Alam S. Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert : High Indium Concentration InGaN Multi-Quantum-Well-Based Blue-Green Light-Emitting Diodes Grown on InGaN “Semi-Bulk” Buffer. [Internet] [Doctoral dissertation]. Université de Lorraine; 2018. [cited 2020 Sep 20]. Available from: http://www.theses.fr/2018LORR0050.

Council of Science Editors:

Alam S. Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert : High Indium Concentration InGaN Multi-Quantum-Well-Based Blue-Green Light-Emitting Diodes Grown on InGaN “Semi-Bulk” Buffer. [Doctoral Dissertation]. Université de Lorraine; 2018. Available from: http://www.theses.fr/2018LORR0050

9. Hamon, Gwenaëlle. III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge) : Cellules solaires tandem III-V/Si : une approche inverse métamorphique par PECVD basse température de c-Si(Ge).

Degree: Docteur es, Physique, 2018, Université Paris-Saclay (ComUE)

 La limite théorique d’efficacité d’une cellule solaire simple jonction est de ~29 %. Afin de dépasser cette limite, une des moyens les plus prometteurs est… (more)

Subjects/Keywords: Photovoltaique; Cellules solaires tandem; Iii-V; Pecvd; Movpe; Photovoltaics; Tandem solar cells; Iii-V; Pecvd; Movpe

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hamon, G. (2018). III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge) : Cellules solaires tandem III-V/Si : une approche inverse métamorphique par PECVD basse température de c-Si(Ge). (Doctoral Dissertation). Université Paris-Saclay (ComUE). Retrieved from http://www.theses.fr/2018SACLX004

Chicago Manual of Style (16th Edition):

Hamon, Gwenaëlle. “III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge) : Cellules solaires tandem III-V/Si : une approche inverse métamorphique par PECVD basse température de c-Si(Ge).” 2018. Doctoral Dissertation, Université Paris-Saclay (ComUE). Accessed September 20, 2020. http://www.theses.fr/2018SACLX004.

MLA Handbook (7th Edition):

Hamon, Gwenaëlle. “III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge) : Cellules solaires tandem III-V/Si : une approche inverse métamorphique par PECVD basse température de c-Si(Ge).” 2018. Web. 20 Sep 2020.

Vancouver:

Hamon G. III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge) : Cellules solaires tandem III-V/Si : une approche inverse métamorphique par PECVD basse température de c-Si(Ge). [Internet] [Doctoral dissertation]. Université Paris-Saclay (ComUE); 2018. [cited 2020 Sep 20]. Available from: http://www.theses.fr/2018SACLX004.

Council of Science Editors:

Hamon G. III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge) : Cellules solaires tandem III-V/Si : une approche inverse métamorphique par PECVD basse température de c-Si(Ge). [Doctoral Dissertation]. Université Paris-Saclay (ComUE); 2018. Available from: http://www.theses.fr/2018SACLX004


NSYSU

10. Gau, Ming-Horng. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.

Degree: PhD, Physics, 2009, NSYSU

 The design, fabrication, and characterizations of the spin-polarized AlxGa1-xN/GaN HEMT structure have been achieved for spintronic application. By band calculation within linear combination of atomic… (more)

Subjects/Keywords: GaN; AlGaN; 2DEG; MOVPE; MBE; HEMT; SdH; spin-splitting; spintronics; LCAO

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gau, M. (2009). Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631

Chicago Manual of Style (16th Edition):

Gau, Ming-Horng. “Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.” 2009. Doctoral Dissertation, NSYSU. Accessed September 20, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631.

MLA Handbook (7th Edition):

Gau, Ming-Horng. “Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.” 2009. Web. 20 Sep 2020.

Vancouver:

Gau M. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. [Internet] [Doctoral dissertation]. NSYSU; 2009. [cited 2020 Sep 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631.

Council of Science Editors:

Gau M. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. [Doctoral Dissertation]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631

11. Wang, Yanzhe. MOVPE Growth and Characterization of InPN Alloy Semiconductor Films (summary).

Degree: 修士(科学), 2017, The University of Tokyo / 東京大学

Subjects/Keywords: InPN; MOVPE; H2 carrier gas

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, Y. (2017). MOVPE Growth and Characterization of InPN Alloy Semiconductor Films (summary). (Thesis). The University of Tokyo / 東京大学. Retrieved from http://hdl.handle.net/2261/50521

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Yanzhe. “MOVPE Growth and Characterization of InPN Alloy Semiconductor Films (summary).” 2017. Thesis, The University of Tokyo / 東京大学. Accessed September 20, 2020. http://hdl.handle.net/2261/50521.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Yanzhe. “MOVPE Growth and Characterization of InPN Alloy Semiconductor Films (summary).” 2017. Web. 20 Sep 2020.

Vancouver:

Wang Y. MOVPE Growth and Characterization of InPN Alloy Semiconductor Films (summary). [Internet] [Thesis]. The University of Tokyo / 東京大学; 2017. [cited 2020 Sep 20]. Available from: http://hdl.handle.net/2261/50521.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang Y. MOVPE Growth and Characterization of InPN Alloy Semiconductor Films (summary). [Thesis]. The University of Tokyo / 東京大学; 2017. Available from: http://hdl.handle.net/2261/50521

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University College Cork

12. Li, Haoning. MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications.

Degree: 2015, University College Cork

 The study of III-nitride materials (InN, GaN and AlN) gained huge research momentum after breakthroughs in the production light emitting diodes (LEDs) and laser diodes… (more)

Subjects/Keywords: UV LEDs; MOVPE growth; Group III-Nitride Materials

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, H. (2015). MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/2283

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Haoning. “MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications.” 2015. Thesis, University College Cork. Accessed September 20, 2020. http://hdl.handle.net/10468/2283.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Haoning. “MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications.” 2015. Web. 20 Sep 2020.

Vancouver:

Li H. MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications. [Internet] [Thesis]. University College Cork; 2015. [cited 2020 Sep 20]. Available from: http://hdl.handle.net/10468/2283.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li H. MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications. [Thesis]. University College Cork; 2015. Available from: http://hdl.handle.net/10468/2283

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

13. Li, Xin. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The context of this thesis falls in the wide applications of UV light sources such as sterilization and purification. On the material aspect, III-nitrides (BAlGaInN)… (more)

Subjects/Keywords: VCSEL; Distributed Bragg reflector; Deep UV; MOVPE; III nitrides

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, X. (2016). BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55561

Chicago Manual of Style (16th Edition):

Li, Xin. “BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2016. Doctoral Dissertation, Georgia Tech. Accessed September 20, 2020. http://hdl.handle.net/1853/55561.

MLA Handbook (7th Edition):

Li, Xin. “BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2016. Web. 20 Sep 2020.

Vancouver:

Li X. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Sep 20]. Available from: http://hdl.handle.net/1853/55561.

Council of Science Editors:

Li X. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55561

14. Riikonen, Juha. Self-Assembled Nanorings and Stressor Quantum Dots.

Degree: 2006, Helsinki University of Technology

In this thesis, the main focus is in the fabrication and characterization of self-assembled III-V compound semiconductor nanostructures. The samples were fabricated by metalorganic vapor… (more)

Subjects/Keywords: MOVPE; epitaxy; nanotechnology; self-assembled; compound semiconductor; quantum dot; nanoring; quantum ring; passivation; MOVPE; epitaksia; nanoteknologia; itsejärjestäytyvä; yhdistepuolijohde; kvanttipiste; kvanttirengas; nanorengas; passivointi

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Riikonen, J. (2006). Self-Assembled Nanorings and Stressor Quantum Dots. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2006/isbn9512281821/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Riikonen, Juha. “Self-Assembled Nanorings and Stressor Quantum Dots.” 2006. Thesis, Helsinki University of Technology. Accessed September 20, 2020. http://lib.tkk.fi/Diss/2006/isbn9512281821/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Riikonen, Juha. “Self-Assembled Nanorings and Stressor Quantum Dots.” 2006. Web. 20 Sep 2020.

Vancouver:

Riikonen J. Self-Assembled Nanorings and Stressor Quantum Dots. [Internet] [Thesis]. Helsinki University of Technology; 2006. [cited 2020 Sep 20]. Available from: http://lib.tkk.fi/Diss/2006/isbn9512281821/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Riikonen J. Self-Assembled Nanorings and Stressor Quantum Dots. [Thesis]. Helsinki University of Technology; 2006. Available from: http://lib.tkk.fi/Diss/2006/isbn9512281821/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. Gamarra, Piero. Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs).

Degree: Docteur es, Matériaux, 2013, Université Claude Bernard – Lyon I

Cette thèse est une contribution à l'étude de composés semiconducteurs InX Al1-X N à forte teneur en Indium. Ces composés présentent des propriétés très intéressantes… (more)

Subjects/Keywords: MOVPE; High Electron Mobility Transistors; InAlN; GaN; AlGaN; Nitrures; Croissance Epitaxiale; III-N; MOVPE; High Electron Mobility Transistors; InAlN; GaN; AlGaN; Nitride Semiconductors; Epitaxy; III-N; 530.4

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gamarra, P. (2013). Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs). (Doctoral Dissertation). Université Claude Bernard – Lyon I. Retrieved from http://www.theses.fr/2013LYO10009

Chicago Manual of Style (16th Edition):

Gamarra, Piero. “Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs).” 2013. Doctoral Dissertation, Université Claude Bernard – Lyon I. Accessed September 20, 2020. http://www.theses.fr/2013LYO10009.

MLA Handbook (7th Edition):

Gamarra, Piero. “Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs).” 2013. Web. 20 Sep 2020.

Vancouver:

Gamarra P. Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs). [Internet] [Doctoral dissertation]. Université Claude Bernard – Lyon I; 2013. [cited 2020 Sep 20]. Available from: http://www.theses.fr/2013LYO10009.

Council of Science Editors:

Gamarra P. Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs). [Doctoral Dissertation]. Université Claude Bernard – Lyon I; 2013. Available from: http://www.theses.fr/2013LYO10009

16. Soresi, Stefano. InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE.

Degree: Docteur es, Électronique, 2018, Montpellier

 Cette thèse s’intéresse à l'intégration sur Si de cellules solaires III-V à simple et double jonction par épitaxie en phase vapeur aux organo-métalliques (MOVPE). Les… (more)

Subjects/Keywords: Cellules solaires tandem; III-V/Si; Movpe; Techno; InP/InGaAs; Jonctions tunnel; Tandem solar cells; III-V/Si; Movpe; Processing; InP/InGaAs; Tunnel junctions

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Soresi, S. (2018). InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE. (Doctoral Dissertation). Montpellier. Retrieved from http://www.theses.fr/2018MONTS021

Chicago Manual of Style (16th Edition):

Soresi, Stefano. “InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE.” 2018. Doctoral Dissertation, Montpellier. Accessed September 20, 2020. http://www.theses.fr/2018MONTS021.

MLA Handbook (7th Edition):

Soresi, Stefano. “InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE.” 2018. Web. 20 Sep 2020.

Vancouver:

Soresi S. InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE. [Internet] [Doctoral dissertation]. Montpellier; 2018. [cited 2020 Sep 20]. Available from: http://www.theses.fr/2018MONTS021.

Council of Science Editors:

Soresi S. InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE. [Doctoral Dissertation]. Montpellier; 2018. Available from: http://www.theses.fr/2018MONTS021


North Carolina State University

17. Park, Ji-Soo. Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 AlGaN-based thin film heterostructures have been grown and fabricated into ultraviolet light emitting diodes with and without p-type and/or n-type AlGaN carrier-blocking layers at the… (more)

Subjects/Keywords: SiC; MOVPE; GaN; AlGaN; UV LEDs

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Park, J. (2005). Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4120

Chicago Manual of Style (16th Edition):

Park, Ji-Soo. “Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes.” 2005. Doctoral Dissertation, North Carolina State University. Accessed September 20, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4120.

MLA Handbook (7th Edition):

Park, Ji-Soo. “Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes.” 2005. Web. 20 Sep 2020.

Vancouver:

Park J. Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Sep 20]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4120.

Council of Science Editors:

Park J. Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4120


Australian National University

18. Burgess, Timothy. From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy .

Degree: 2017, Australian National University

 As conventional methods of semiconductor fabrication approach fundamental physical limits, new paradigms are required for progress. One concept with the potential to deliver such a… (more)

Subjects/Keywords: Nanotechnology; nanowires; epitaxy; III-V; II-V; zinc arsenide; zinc phosphide; MOCVD; MOVPE

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Burgess, T. (2017). From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/144611

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Burgess, Timothy. “From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy .” 2017. Thesis, Australian National University. Accessed September 20, 2020. http://hdl.handle.net/1885/144611.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Burgess, Timothy. “From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy .” 2017. Web. 20 Sep 2020.

Vancouver:

Burgess T. From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy . [Internet] [Thesis]. Australian National University; 2017. [cited 2020 Sep 20]. Available from: http://hdl.handle.net/1885/144611.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Burgess T. From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy . [Thesis]. Australian National University; 2017. Available from: http://hdl.handle.net/1885/144611

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

19. Smith, Brittany L. Development and Life Cycle Assessment of Advanced-Concept III-V Multijunction Photovoltaics.

Degree: PhD, Sustainability (GIS), 2018, Rochester Institute of Technology

  III-V semiconductors make for highly efficient solar cells, but are expensive to manufacture. However, there are many mechanisms for improving III-V photovoltaics in order… (more)

Subjects/Keywords: Concentrator; iii-V; Life cycle assessment; Metal organic vapor phase epitaxy; MOVPE; Photovoltaics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Smith, B. L. (2018). Development and Life Cycle Assessment of Advanced-Concept III-V Multijunction Photovoltaics. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/9877

Chicago Manual of Style (16th Edition):

Smith, Brittany L. “Development and Life Cycle Assessment of Advanced-Concept III-V Multijunction Photovoltaics.” 2018. Doctoral Dissertation, Rochester Institute of Technology. Accessed September 20, 2020. https://scholarworks.rit.edu/theses/9877.

MLA Handbook (7th Edition):

Smith, Brittany L. “Development and Life Cycle Assessment of Advanced-Concept III-V Multijunction Photovoltaics.” 2018. Web. 20 Sep 2020.

Vancouver:

Smith BL. Development and Life Cycle Assessment of Advanced-Concept III-V Multijunction Photovoltaics. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2018. [cited 2020 Sep 20]. Available from: https://scholarworks.rit.edu/theses/9877.

Council of Science Editors:

Smith BL. Development and Life Cycle Assessment of Advanced-Concept III-V Multijunction Photovoltaics. [Doctoral Dissertation]. Rochester Institute of Technology; 2018. Available from: https://scholarworks.rit.edu/theses/9877

20. Mukhtarova, Anna. Puits quantiques de composés nitrures InGaN/GaN pour le photovaoltaique : InGaN/GaN Multiple Quantum Wells for Photovoltaics.

Degree: Docteur es, Nanophysique, 2015, Université Grenoble Alpes (ComUE)

Ce travail traite de la croissance épitaxiale et de la caractérisation d’hétérostructures àbase de multi-puits quantiques (MPQ) pour des applications dans le photovoltaïque. Leséchantillons ont… (more)

Subjects/Keywords: InGaN/GaN; Puits quantiques; EPVOM; Cellules solaires; InGaN/GaN; Quantum well; MOVPE; Solar cell; 530

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mukhtarova, A. (2015). Puits quantiques de composés nitrures InGaN/GaN pour le photovaoltaique : InGaN/GaN Multiple Quantum Wells for Photovoltaics. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2015GREAY008

Chicago Manual of Style (16th Edition):

Mukhtarova, Anna. “Puits quantiques de composés nitrures InGaN/GaN pour le photovaoltaique : InGaN/GaN Multiple Quantum Wells for Photovoltaics.” 2015. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed September 20, 2020. http://www.theses.fr/2015GREAY008.

MLA Handbook (7th Edition):

Mukhtarova, Anna. “Puits quantiques de composés nitrures InGaN/GaN pour le photovaoltaique : InGaN/GaN Multiple Quantum Wells for Photovoltaics.” 2015. Web. 20 Sep 2020.

Vancouver:

Mukhtarova A. Puits quantiques de composés nitrures InGaN/GaN pour le photovaoltaique : InGaN/GaN Multiple Quantum Wells for Photovoltaics. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2015. [cited 2020 Sep 20]. Available from: http://www.theses.fr/2015GREAY008.

Council of Science Editors:

Mukhtarova A. Puits quantiques de composés nitrures InGaN/GaN pour le photovaoltaique : InGaN/GaN Multiple Quantum Wells for Photovoltaics. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2015. Available from: http://www.theses.fr/2015GREAY008


Kyoto University / 京都大学

21. Tsujimura, Ayumu. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長.

Degree: 博士(工学), 2012, Kyoto University / 京都大学

新制・論文博士

乙第12695号

論工博第4084号

Subjects/Keywords: ZnSe; GaN; laser diode; MBE; MOVPE; epitaxial growth

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tsujimura, A. (2012). Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長. (Thesis). Kyoto University / 京都大学. Retrieved from http://hdl.handle.net/2433/161023 ; http://dx.doi.org/10.14989/doctor.r12695

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tsujimura, Ayumu. “Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長.” 2012. Thesis, Kyoto University / 京都大学. Accessed September 20, 2020. http://hdl.handle.net/2433/161023 ; http://dx.doi.org/10.14989/doctor.r12695.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tsujimura, Ayumu. “Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長.” 2012. Web. 20 Sep 2020.

Vancouver:

Tsujimura A. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長. [Internet] [Thesis]. Kyoto University / 京都大学; 2012. [cited 2020 Sep 20]. Available from: http://hdl.handle.net/2433/161023 ; http://dx.doi.org/10.14989/doctor.r12695.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tsujimura A. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長. [Thesis]. Kyoto University / 京都大学; 2012. Available from: http://hdl.handle.net/2433/161023 ; http://dx.doi.org/10.14989/doctor.r12695

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Lund

22. Heurlin, Magnus. Growth of Semiconductor Nanowires for Solar Cell Applications.

Degree: 2015, University of Lund

 Nanowires have the ability to absorb light much more efficient than conventional thin film layers. This makes them candidates for the development of new types… (more)

Subjects/Keywords: Condensed Matter Physics; Nano Technology; MOVPE; Aerotaxy; III-V semiconductor materials; nanowire; solar cells; photovoltaics; Fysicumarkivet A:2015:Heurlin

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Heurlin, M. (2015). Growth of Semiconductor Nanowires for Solar Cell Applications. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/8084551 ; https://portal.research.lu.se/ws/files/6374847/8084554.pdf

Chicago Manual of Style (16th Edition):

Heurlin, Magnus. “Growth of Semiconductor Nanowires for Solar Cell Applications.” 2015. Doctoral Dissertation, University of Lund. Accessed September 20, 2020. https://lup.lub.lu.se/record/8084551 ; https://portal.research.lu.se/ws/files/6374847/8084554.pdf.

MLA Handbook (7th Edition):

Heurlin, Magnus. “Growth of Semiconductor Nanowires for Solar Cell Applications.” 2015. Web. 20 Sep 2020.

Vancouver:

Heurlin M. Growth of Semiconductor Nanowires for Solar Cell Applications. [Internet] [Doctoral dissertation]. University of Lund; 2015. [cited 2020 Sep 20]. Available from: https://lup.lub.lu.se/record/8084551 ; https://portal.research.lu.se/ws/files/6374847/8084554.pdf.

Council of Science Editors:

Heurlin M. Growth of Semiconductor Nanowires for Solar Cell Applications. [Doctoral Dissertation]. University of Lund; 2015. Available from: https://lup.lub.lu.se/record/8084551 ; https://portal.research.lu.se/ws/files/6374847/8084554.pdf

23. 出浦, 桃子. III/V族化合物半導体MOVPEにおける界面急峻化に向けた表面in situ観察と速度過程解析 : In situ surface observation and kinetic analysis for abrupt hetero-interfaces in MOVPE of III/V compound semiconductors.

Degree: 修士(工学), 2017, The University of Tokyo / 東京大学

Subjects/Keywords: MOVPE; 化合物半導体

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

出浦, . (2017). III/V族化合物半導体MOVPEにおける界面急峻化に向けた表面in situ観察と速度過程解析 : In situ surface observation and kinetic analysis for abrupt hetero-interfaces in MOVPE of III/V compound semiconductors. (Thesis). The University of Tokyo / 東京大学. Retrieved from http://hdl.handle.net/2261/29067

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

出浦, 桃子. “III/V族化合物半導体MOVPEにおける界面急峻化に向けた表面in situ観察と速度過程解析 : In situ surface observation and kinetic analysis for abrupt hetero-interfaces in MOVPE of III/V compound semiconductors.” 2017. Thesis, The University of Tokyo / 東京大学. Accessed September 20, 2020. http://hdl.handle.net/2261/29067.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

出浦, 桃子. “III/V族化合物半導体MOVPEにおける界面急峻化に向けた表面in situ観察と速度過程解析 : In situ surface observation and kinetic analysis for abrupt hetero-interfaces in MOVPE of III/V compound semiconductors.” 2017. Web. 20 Sep 2020.

Vancouver:

出浦 . III/V族化合物半導体MOVPEにおける界面急峻化に向けた表面in situ観察と速度過程解析 : In situ surface observation and kinetic analysis for abrupt hetero-interfaces in MOVPE of III/V compound semiconductors. [Internet] [Thesis]. The University of Tokyo / 東京大学; 2017. [cited 2020 Sep 20]. Available from: http://hdl.handle.net/2261/29067.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

出浦 . III/V族化合物半導体MOVPEにおける界面急峻化に向けた表面in situ観察と速度過程解析 : In situ surface observation and kinetic analysis for abrupt hetero-interfaces in MOVPE of III/V compound semiconductors. [Thesis]. The University of Tokyo / 東京大学; 2017. Available from: http://hdl.handle.net/2261/29067

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

24. 菊地, 健彦. Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨).

Degree: 修士(科学), 2017, The University of Tokyo / 東京大学

Subjects/Keywords: MOVPE; InGaAsN; Ge基板; 太陽電池

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

菊地, . (2017). Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨). (Thesis). The University of Tokyo / 東京大学. Retrieved from http://hdl.handle.net/2261/48809

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

菊地, 健彦. “Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨).” 2017. Thesis, The University of Tokyo / 東京大学. Accessed September 20, 2020. http://hdl.handle.net/2261/48809.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

菊地, 健彦. “Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨).” 2017. Web. 20 Sep 2020.

Vancouver:

菊地 . Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨). [Internet] [Thesis]. The University of Tokyo / 東京大学; 2017. [cited 2020 Sep 20]. Available from: http://hdl.handle.net/2261/48809.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

菊地 . Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨). [Thesis]. The University of Tokyo / 東京大学; 2017. Available from: http://hdl.handle.net/2261/48809

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Linköping University

25. Nilsson, Daniel. Simulation of cubic GaN growth in SA MOVPE.

Degree: Chemistry and Biology, 2009, Linköping University

  In this work growth of cubic GaN in the selective area (SA) MOVPE process is simulated. The simulations are restricted to small pattern SA… (more)

Subjects/Keywords: simulation; gallium nitride; SAG MOVPE; anisotropic; Physics; Fysik

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Nilsson, D. (2009). Simulation of cubic GaN growth in SA MOVPE. (Thesis). Linköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17682

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Nilsson, Daniel. “Simulation of cubic GaN growth in SA MOVPE.” 2009. Thesis, Linköping University. Accessed September 20, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17682.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Nilsson, Daniel. “Simulation of cubic GaN growth in SA MOVPE.” 2009. Web. 20 Sep 2020.

Vancouver:

Nilsson D. Simulation of cubic GaN growth in SA MOVPE. [Internet] [Thesis]. Linköping University; 2009. [cited 2020 Sep 20]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17682.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Nilsson D. Simulation of cubic GaN growth in SA MOVPE. [Thesis]. Linköping University; 2009. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17682

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

26. Laval, Gautier. Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2017, Université Grenoble Alpes (ComUE)

Les diodes électroluminescentes (LEDs) utilisées dans les systèmes d'éclairage solide sont réalisées à base de GaN et de ses alliages. Bien que les LEDs commerciales… (more)

Subjects/Keywords: GaN; Silicium; Epvom; Croissance sélective; Optoélectronique; Micro-LEDs; GaN; Silicon; Movpe; Selective area growth; Optoelectronic; Micro-LEDs; 620

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Laval, G. (2017). Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2017GREAT018

Chicago Manual of Style (16th Edition):

Laval, Gautier. “Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications.” 2017. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed September 20, 2020. http://www.theses.fr/2017GREAT018.

MLA Handbook (7th Edition):

Laval, Gautier. “Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications.” 2017. Web. 20 Sep 2020.

Vancouver:

Laval G. Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2017. [cited 2020 Sep 20]. Available from: http://www.theses.fr/2017GREAT018.

Council of Science Editors:

Laval G. Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2017. Available from: http://www.theses.fr/2017GREAT018

27. Abid, Mohamed. Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength.

Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech

 One of the key advances in photonic technology in recent decades was the development of a new type of diode lasers emitting in the visible… (more)

Subjects/Keywords: VCSEL; MOVPE; DBR; Photonics; Lasers; Optoelectronic devices

…4.4.1 MOVPE BGaN growth 95 4.4.2 Morphological and structural characterizations 98… …materials 103 109 4.5.1 MOVPE BAlN growth 109 4.5.2 Surface morphology and structural… …epitaxial growth. 38 x Figure 18: MOVPE setup and growth chamber. 39 Figure 19: In situ… …MOVPE). 3 Figure 3: Bandgap energy versus in-plane lattice parameter diagram for III-N… …Heterostructures and growth challenges Major recent breakthroughs in the MOVPE growth of high-quality… 

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Abid, M. (2013). Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/47682

Chicago Manual of Style (16th Edition):

Abid, Mohamed. “Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength.” 2013. Doctoral Dissertation, Georgia Tech. Accessed September 20, 2020. http://hdl.handle.net/1853/47682.

MLA Handbook (7th Edition):

Abid, Mohamed. “Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength.” 2013. Web. 20 Sep 2020.

Vancouver:

Abid M. Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2020 Sep 20]. Available from: http://hdl.handle.net/1853/47682.

Council of Science Editors:

Abid M. Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/47682


Kyoto University

28. Tsujimura, Ayumu. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes .

Degree: 2012, Kyoto University

Subjects/Keywords: ZnSe; GaN; laser diode; MBE; MOVPE; epitaxial growth

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tsujimura, A. (2012). Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes . (Thesis). Kyoto University. Retrieved from http://hdl.handle.net/2433/161023

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tsujimura, Ayumu. “Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes .” 2012. Thesis, Kyoto University. Accessed September 20, 2020. http://hdl.handle.net/2433/161023.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tsujimura, Ayumu. “Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes .” 2012. Web. 20 Sep 2020.

Vancouver:

Tsujimura A. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes . [Internet] [Thesis]. Kyoto University; 2012. [cited 2020 Sep 20]. Available from: http://hdl.handle.net/2433/161023.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tsujimura A. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes . [Thesis]. Kyoto University; 2012. Available from: http://hdl.handle.net/2433/161023

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Lund

29. Sun, Rong. Understanding the Role of Seed Particle Material on III-As Nanowire Growth.

Degree: 2018, University of Lund

 III-V semiconductor nanowires have attracted extensive research interests over the past few decades due to their unique geometry and great potential for promoting new functionalities… (more)

Subjects/Keywords: Engineering and Technology; seminconductor materials; nanowire growth; catalyst; metalorganic vapor phase epitaxy (MOVPE); Tin; Fysicumarkivet A:2018:Sun

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Sun, R. (2018). Understanding the Role of Seed Particle Material on III-As Nanowire Growth. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/53910c2e-f7c5-4df3-b685-9f52b2d5d668 ; https://portal.research.lu.se/ws/files/45396215/Rong_final_thesis.pdf

Chicago Manual of Style (16th Edition):

Sun, Rong. “Understanding the Role of Seed Particle Material on III-As Nanowire Growth.” 2018. Doctoral Dissertation, University of Lund. Accessed September 20, 2020. https://lup.lub.lu.se/record/53910c2e-f7c5-4df3-b685-9f52b2d5d668 ; https://portal.research.lu.se/ws/files/45396215/Rong_final_thesis.pdf.

MLA Handbook (7th Edition):

Sun, Rong. “Understanding the Role of Seed Particle Material on III-As Nanowire Growth.” 2018. Web. 20 Sep 2020.

Vancouver:

Sun R. Understanding the Role of Seed Particle Material on III-As Nanowire Growth. [Internet] [Doctoral dissertation]. University of Lund; 2018. [cited 2020 Sep 20]. Available from: https://lup.lub.lu.se/record/53910c2e-f7c5-4df3-b685-9f52b2d5d668 ; https://portal.research.lu.se/ws/files/45396215/Rong_final_thesis.pdf.

Council of Science Editors:

Sun R. Understanding the Role of Seed Particle Material on III-As Nanowire Growth. [Doctoral Dissertation]. University of Lund; 2018. Available from: https://lup.lub.lu.se/record/53910c2e-f7c5-4df3-b685-9f52b2d5d668 ; https://portal.research.lu.se/ws/files/45396215/Rong_final_thesis.pdf

30. Hanamoto, Luciana Kazumi. Efeitos de tamanho finito e de interfaces em super-redes InP/In IND. 0.53 Ga IND. 0.47As.

Degree: PhD, Física, 2001, University of São Paulo

Neste trabalho, estudamos as propriedades eletrônicas e estruturais de super-redes InP/In IND. 0.53 Ga IND. 0.47As dopadas fortemente com Si (densidade equivalente no bulk superior… (more)

Subjects/Keywords: Dopagem planar; Estados de Tamm; III-V semiconductors; Interfaces; Interfaces; MOVPE; MOVPE; Planar doping; Semicondutores III-V; Tamm states

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hanamoto, L. K. (2001). Efeitos de tamanho finito e de interfaces em super-redes InP/In IND. 0.53 Ga IND. 0.47As. (Doctoral Dissertation). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/43/43134/tde-11122013-121715/ ;

Chicago Manual of Style (16th Edition):

Hanamoto, Luciana Kazumi. “Efeitos de tamanho finito e de interfaces em super-redes InP/In IND. 0.53 Ga IND. 0.47As.” 2001. Doctoral Dissertation, University of São Paulo. Accessed September 20, 2020. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-11122013-121715/ ;.

MLA Handbook (7th Edition):

Hanamoto, Luciana Kazumi. “Efeitos de tamanho finito e de interfaces em super-redes InP/In IND. 0.53 Ga IND. 0.47As.” 2001. Web. 20 Sep 2020.

Vancouver:

Hanamoto LK. Efeitos de tamanho finito e de interfaces em super-redes InP/In IND. 0.53 Ga IND. 0.47As. [Internet] [Doctoral dissertation]. University of São Paulo; 2001. [cited 2020 Sep 20]. Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-11122013-121715/ ;.

Council of Science Editors:

Hanamoto LK. Efeitos de tamanho finito e de interfaces em super-redes InP/In IND. 0.53 Ga IND. 0.47As. [Doctoral Dissertation]. University of São Paulo; 2001. Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-11122013-121715/ ;

[1] [2]

.