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You searched for subject:(MOVPE). Showing records 1 – 30 of 58 total matches.

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1. 中俣, 徹. ナノフォトニックデバイス開発のためのMOVPE法によるZnOナノロッドの選択成長.

Degree: 2017, The University of Tokyo / 東京大学

Subjects/Keywords: ZnO; MOVPE; ナノロッド

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

中俣, . (2017). ナノフォトニックデバイス開発のためのMOVPE法によるZnOナノロッドの選択成長. (Thesis). The University of Tokyo / 東京大学. Retrieved from http://hdl.handle.net/2261/25821

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

中俣, 徹. “ナノフォトニックデバイス開発のためのMOVPE法によるZnOナノロッドの選択成長.” 2017. Thesis, The University of Tokyo / 東京大学. Accessed May 26, 2019. http://hdl.handle.net/2261/25821.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

中俣, 徹. “ナノフォトニックデバイス開発のためのMOVPE法によるZnOナノロッドの選択成長.” 2017. Web. 26 May 2019.

Vancouver:

中俣 . ナノフォトニックデバイス開発のためのMOVPE法によるZnOナノロッドの選択成長. [Internet] [Thesis]. The University of Tokyo / 東京大学; 2017. [cited 2019 May 26]. Available from: http://hdl.handle.net/2261/25821.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

中俣 . ナノフォトニックデバイス開発のためのMOVPE法によるZnOナノロッドの選択成長. [Thesis]. The University of Tokyo / 東京大学; 2017. Available from: http://hdl.handle.net/2261/25821

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

2. Suihkonen, Sami. Fabrication of InGaN Quantum Wells for LED Applications.

Degree: 2008, Helsinki University of Technology

In this thesis fabrication and properties of InGaN quantum wells (QWs) for light emitting diode (LED) applications is studied. Metal-organic vapor phase epitaxy (MOVPE) is… (more)

Subjects/Keywords: light emitting diodes; MOVPE; III-N materials; quantum wells; LED; MOVPE; III-N materiaalit; kvanttikaivo

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APA (6th Edition):

Suihkonen, S. (2008). Fabrication of InGaN Quantum Wells for LED Applications. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2008/isbn9789512292875/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Suihkonen, Sami. “Fabrication of InGaN Quantum Wells for LED Applications.” 2008. Thesis, Helsinki University of Technology. Accessed May 26, 2019. http://lib.tkk.fi/Diss/2008/isbn9789512292875/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Suihkonen, Sami. “Fabrication of InGaN Quantum Wells for LED Applications.” 2008. Web. 26 May 2019.

Vancouver:

Suihkonen S. Fabrication of InGaN Quantum Wells for LED Applications. [Internet] [Thesis]. Helsinki University of Technology; 2008. [cited 2019 May 26]. Available from: http://lib.tkk.fi/Diss/2008/isbn9789512292875/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Suihkonen S. Fabrication of InGaN Quantum Wells for LED Applications. [Thesis]. Helsinki University of Technology; 2008. Available from: http://lib.tkk.fi/Diss/2008/isbn9789512292875/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Lorraine

3. Li, Xin. Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.

Degree: Docteur es, Physique, 2015, Université de Lorraine

Le contexte de cette thèse se situe dans les nombreuses applications de sources UV tels que la stérilisation et la purification. Comparés aux sources conventionnelles,… (more)

Subjects/Keywords: VCSEL; DBR; DUV; MOVPE; III-Nitrures; VCSEL; DBR; DUV; MOVPE; III nitrides; 537.622; 621.36

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APA (6th Edition):

Li, X. (2015). Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. (Doctoral Dissertation). Université de Lorraine. Retrieved from http://www.theses.fr/2015LORR0243

Chicago Manual of Style (16th Edition):

Li, Xin. “Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2015. Doctoral Dissertation, Université de Lorraine. Accessed May 26, 2019. http://www.theses.fr/2015LORR0243.

MLA Handbook (7th Edition):

Li, Xin. “Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2015. Web. 26 May 2019.

Vancouver:

Li X. Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Internet] [Doctoral dissertation]. Université de Lorraine; 2015. [cited 2019 May 26]. Available from: http://www.theses.fr/2015LORR0243.

Council of Science Editors:

Li X. Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Doctoral Dissertation]. Université de Lorraine; 2015. Available from: http://www.theses.fr/2015LORR0243

4. Reentilä, Outi. Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures.

Degree: 2007, Helsinki University of Technology

In this work epitaxial growth and in situ characterisation of dilute nitride quantum well (QW) structures are studied. Dilute nitrides are III-V compound semiconductors with… (more)

Subjects/Keywords: MOVPE; epitaxy; quantum wells; in situ monitoring; dilute nitrides; MOVPE; epitaksia; kvanttikaivo; valmistuksenaikainen tarkkailu; laimeat nitridit

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APA (6th Edition):

Reentilä, O. (2007). Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2007/isbn9789512287314/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Reentilä, Outi. “Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures.” 2007. Thesis, Helsinki University of Technology. Accessed May 26, 2019. http://lib.tkk.fi/Diss/2007/isbn9789512287314/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Reentilä, Outi. “Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures.” 2007. Web. 26 May 2019.

Vancouver:

Reentilä O. Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures. [Internet] [Thesis]. Helsinki University of Technology; 2007. [cited 2019 May 26]. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512287314/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Reentilä O. Growth and In Situ Characterisation of Dilute Nitride Quantum Well Structures. [Thesis]. Helsinki University of Technology; 2007. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512287314/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

5. Mattila, Marco. Self-Assembled Indium Phosphide Nanowires.

Degree: 2007, Helsinki University of Technology

This thesis deals with the self-assembled vapor-liquid-solid (VLS) growth and properties of InP nanowires, concentrating mainly on the novel catalyst-free growth of InP nanowires using… (more)

Subjects/Keywords: nanowire; self-assembled; indium phosphide; catalyst-free; vapor-liquid-solid; VLS; MOVPE; nanolanka; itseorganisoituva; InP; katalyytitön; vapor-liquid-solid; VLS; MOVPE

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APA (6th Edition):

Mattila, M. (2007). Self-Assembled Indium Phosphide Nanowires. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2007/isbn9789512288137/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mattila, Marco. “Self-Assembled Indium Phosphide Nanowires.” 2007. Thesis, Helsinki University of Technology. Accessed May 26, 2019. http://lib.tkk.fi/Diss/2007/isbn9789512288137/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mattila, Marco. “Self-Assembled Indium Phosphide Nanowires.” 2007. Web. 26 May 2019.

Vancouver:

Mattila M. Self-Assembled Indium Phosphide Nanowires. [Internet] [Thesis]. Helsinki University of Technology; 2007. [cited 2019 May 26]. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512288137/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mattila M. Self-Assembled Indium Phosphide Nanowires. [Thesis]. Helsinki University of Technology; 2007. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512288137/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

6. Thierry, Robin. Croissance de nanofils de ZnO et d'hétérostructures coeur-coquilles ZnO/ZnMgO par MOVPE : MOVPE growth of ZnO nanowires and ZnO/ZnMgO core-shell heterostructures.

Degree: Docteur es, Sciences et technologie industrielles, 2011, Université de Grenoble

Ce travail porte sur la croissance par MOVPE et l’étude de structures à base de nanofilsde ZnO, semi-conducteur à large bande interdite directe (3,37 eV)… (more)

Subjects/Keywords: Nanostructure; Nanofil; ZnO; Croissance; Épitaxie; MOCVD; MOVPE; Optoélectronique; LED; Nanostructure; Nanowire; Nanorod; ZnO; Growth; Epitaxial; MOCVD; MOVPE; Optoelectronic; LED

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APA (6th Edition):

Thierry, R. (2011). Croissance de nanofils de ZnO et d'hétérostructures coeur-coquilles ZnO/ZnMgO par MOVPE : MOVPE growth of ZnO nanowires and ZnO/ZnMgO core-shell heterostructures. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENT099

Chicago Manual of Style (16th Edition):

Thierry, Robin. “Croissance de nanofils de ZnO et d'hétérostructures coeur-coquilles ZnO/ZnMgO par MOVPE : MOVPE growth of ZnO nanowires and ZnO/ZnMgO core-shell heterostructures.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed May 26, 2019. http://www.theses.fr/2011GRENT099.

MLA Handbook (7th Edition):

Thierry, Robin. “Croissance de nanofils de ZnO et d'hétérostructures coeur-coquilles ZnO/ZnMgO par MOVPE : MOVPE growth of ZnO nanowires and ZnO/ZnMgO core-shell heterostructures.” 2011. Web. 26 May 2019.

Vancouver:

Thierry R. Croissance de nanofils de ZnO et d'hétérostructures coeur-coquilles ZnO/ZnMgO par MOVPE : MOVPE growth of ZnO nanowires and ZnO/ZnMgO core-shell heterostructures. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2019 May 26]. Available from: http://www.theses.fr/2011GRENT099.

Council of Science Editors:

Thierry R. Croissance de nanofils de ZnO et d'hétérostructures coeur-coquilles ZnO/ZnMgO par MOVPE : MOVPE growth of ZnO nanowires and ZnO/ZnMgO core-shell heterostructures. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENT099


Université de Lorraine

7. Alam, Saiful. Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert : High Indium Concentration InGaN Multi-Quantum-Well-Based Blue-Green Light-Emitting Diodes Grown on InGaN “Semi-Bulk” Buffer.

Degree: Docteur es, Physique, 2018, Université de Lorraine

Les diodes électroluminescentes (DEL) à base de GaN ont déjà été commercialisées comme solution économique d’éclairage, étant donné que les multi-puits quantiques (MQW) basés sur… (more)

Subjects/Keywords: LED; MOVPE; InGaN MQW; InGaN «semi-bulk»; LED; MOVPE; InGaN MQW; InGaN “semi-bulk” buffer; 537.54; 621.381 522

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APA (6th Edition):

Alam, S. (2018). Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert : High Indium Concentration InGaN Multi-Quantum-Well-Based Blue-Green Light-Emitting Diodes Grown on InGaN “Semi-Bulk” Buffer. (Doctoral Dissertation). Université de Lorraine. Retrieved from http://www.theses.fr/2018LORR0050

Chicago Manual of Style (16th Edition):

Alam, Saiful. “Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert : High Indium Concentration InGaN Multi-Quantum-Well-Based Blue-Green Light-Emitting Diodes Grown on InGaN “Semi-Bulk” Buffer.” 2018. Doctoral Dissertation, Université de Lorraine. Accessed May 26, 2019. http://www.theses.fr/2018LORR0050.

MLA Handbook (7th Edition):

Alam, Saiful. “Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert : High Indium Concentration InGaN Multi-Quantum-Well-Based Blue-Green Light-Emitting Diodes Grown on InGaN “Semi-Bulk” Buffer.” 2018. Web. 26 May 2019.

Vancouver:

Alam S. Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert : High Indium Concentration InGaN Multi-Quantum-Well-Based Blue-Green Light-Emitting Diodes Grown on InGaN “Semi-Bulk” Buffer. [Internet] [Doctoral dissertation]. Université de Lorraine; 2018. [cited 2019 May 26]. Available from: http://www.theses.fr/2018LORR0050.

Council of Science Editors:

Alam S. Optimisation d’hétéro-structures à multipuits quantiques InGaN sur sous-couche InGaN pour diodes electroluminescentes émettant dans le domaine spectral bleu-vert : High Indium Concentration InGaN Multi-Quantum-Well-Based Blue-Green Light-Emitting Diodes Grown on InGaN “Semi-Bulk” Buffer. [Doctoral Dissertation]. Université de Lorraine; 2018. Available from: http://www.theses.fr/2018LORR0050

8. Hamon, Gwenaëlle. III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge) : Cellules solaires tandem III-V/Si : une approche inverse métamorphique par PECVD basse température de c-Si(Ge).

Degree: Docteur es, Physique, 2018, Paris Saclay

 La limite théorique d’efficacité d’une cellule solaire simple jonction est de ~29 %. Afin de dépasser cette limite, une des moyens les plus prometteurs est… (more)

Subjects/Keywords: Photovoltaique; Cellules solaires tandem; Iii-V; Pecvd; Movpe; Photovoltaics; Tandem solar cells; Iii-V; Pecvd; Movpe

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APA (6th Edition):

Hamon, G. (2018). III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge) : Cellules solaires tandem III-V/Si : une approche inverse métamorphique par PECVD basse température de c-Si(Ge). (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2018SACLX004

Chicago Manual of Style (16th Edition):

Hamon, Gwenaëlle. “III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge) : Cellules solaires tandem III-V/Si : une approche inverse métamorphique par PECVD basse température de c-Si(Ge).” 2018. Doctoral Dissertation, Paris Saclay. Accessed May 26, 2019. http://www.theses.fr/2018SACLX004.

MLA Handbook (7th Edition):

Hamon, Gwenaëlle. “III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge) : Cellules solaires tandem III-V/Si : une approche inverse métamorphique par PECVD basse température de c-Si(Ge).” 2018. Web. 26 May 2019.

Vancouver:

Hamon G. III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge) : Cellules solaires tandem III-V/Si : une approche inverse métamorphique par PECVD basse température de c-Si(Ge). [Internet] [Doctoral dissertation]. Paris Saclay; 2018. [cited 2019 May 26]. Available from: http://www.theses.fr/2018SACLX004.

Council of Science Editors:

Hamon G. III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge) : Cellules solaires tandem III-V/Si : une approche inverse métamorphique par PECVD basse température de c-Si(Ge). [Doctoral Dissertation]. Paris Saclay; 2018. Available from: http://www.theses.fr/2018SACLX004


NSYSU

9. Gau, Ming-Horng. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.

Degree: PhD, Physics, 2009, NSYSU

 The design, fabrication, and characterizations of the spin-polarized AlxGa1-xN/GaN HEMT structure have been achieved for spintronic application. By band calculation within linear combination of atomic… (more)

Subjects/Keywords: GaN; AlGaN; 2DEG; MOVPE; MBE; HEMT; SdH; spin-splitting; spintronics; LCAO

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APA (6th Edition):

Gau, M. (2009). Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631

Chicago Manual of Style (16th Edition):

Gau, Ming-Horng. “Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.” 2009. Doctoral Dissertation, NSYSU. Accessed May 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631.

MLA Handbook (7th Edition):

Gau, Ming-Horng. “Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.” 2009. Web. 26 May 2019.

Vancouver:

Gau M. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. [Internet] [Doctoral dissertation]. NSYSU; 2009. [cited 2019 May 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631.

Council of Science Editors:

Gau M. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. [Doctoral Dissertation]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631

10. Martin, Jérôme. Etude par épitaxie en phase vapeur aux organométalliques de la croissance sélective de nano-hétéro-structures de matériaux à base de GaN : GaN based materials nano-hetero-structures selective area growth study by metalorganic vapor phase epitaxy.

Degree: Docteur es, Physique, 2009, Metz

La nano-structuration de matériaux semiconducteurs à grand gap à base de GaN fait l'objet d'un très grand intérêt de par son potentiel pour l'élaboration de… (more)

Subjects/Keywords: Epitaxie sélective; Semiconducteurs à grand gap; Semiconducteurs nitrures; MOVPE; GaN; Nanostructures

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APA (6th Edition):

Martin, J. (2009). Etude par épitaxie en phase vapeur aux organométalliques de la croissance sélective de nano-hétéro-structures de matériaux à base de GaN : GaN based materials nano-hetero-structures selective area growth study by metalorganic vapor phase epitaxy. (Doctoral Dissertation). Metz. Retrieved from http://www.theses.fr/2009METZ027S

Chicago Manual of Style (16th Edition):

Martin, Jérôme. “Etude par épitaxie en phase vapeur aux organométalliques de la croissance sélective de nano-hétéro-structures de matériaux à base de GaN : GaN based materials nano-hetero-structures selective area growth study by metalorganic vapor phase epitaxy.” 2009. Doctoral Dissertation, Metz. Accessed May 26, 2019. http://www.theses.fr/2009METZ027S.

MLA Handbook (7th Edition):

Martin, Jérôme. “Etude par épitaxie en phase vapeur aux organométalliques de la croissance sélective de nano-hétéro-structures de matériaux à base de GaN : GaN based materials nano-hetero-structures selective area growth study by metalorganic vapor phase epitaxy.” 2009. Web. 26 May 2019.

Vancouver:

Martin J. Etude par épitaxie en phase vapeur aux organométalliques de la croissance sélective de nano-hétéro-structures de matériaux à base de GaN : GaN based materials nano-hetero-structures selective area growth study by metalorganic vapor phase epitaxy. [Internet] [Doctoral dissertation]. Metz; 2009. [cited 2019 May 26]. Available from: http://www.theses.fr/2009METZ027S.

Council of Science Editors:

Martin J. Etude par épitaxie en phase vapeur aux organométalliques de la croissance sélective de nano-hétéro-structures de matériaux à base de GaN : GaN based materials nano-hetero-structures selective area growth study by metalorganic vapor phase epitaxy. [Doctoral Dissertation]. Metz; 2009. Available from: http://www.theses.fr/2009METZ027S

11. Wang, Yanzhe. MOVPE Growth and Characterization of InPN Alloy Semiconductor Films (summary).

Degree: 修士(科学), 2017, The University of Tokyo / 東京大学

Subjects/Keywords: InPN; MOVPE; H2 carrier gas

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APA (6th Edition):

Wang, Y. (2017). MOVPE Growth and Characterization of InPN Alloy Semiconductor Films (summary). (Thesis). The University of Tokyo / 東京大学. Retrieved from http://hdl.handle.net/2261/50521

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Yanzhe. “MOVPE Growth and Characterization of InPN Alloy Semiconductor Films (summary).” 2017. Thesis, The University of Tokyo / 東京大学. Accessed May 26, 2019. http://hdl.handle.net/2261/50521.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Yanzhe. “MOVPE Growth and Characterization of InPN Alloy Semiconductor Films (summary).” 2017. Web. 26 May 2019.

Vancouver:

Wang Y. MOVPE Growth and Characterization of InPN Alloy Semiconductor Films (summary). [Internet] [Thesis]. The University of Tokyo / 東京大学; 2017. [cited 2019 May 26]. Available from: http://hdl.handle.net/2261/50521.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang Y. MOVPE Growth and Characterization of InPN Alloy Semiconductor Films (summary). [Thesis]. The University of Tokyo / 東京大学; 2017. Available from: http://hdl.handle.net/2261/50521

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

12. Li, Xin. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The context of this thesis falls in the wide applications of UV light sources such as sterilization and purification. On the material aspect, III-nitrides (BAlGaInN)… (more)

Subjects/Keywords: VCSEL; Distributed Bragg reflector; Deep UV; MOVPE; III nitrides

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APA (6th Edition):

Li, X. (2016). BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55561

Chicago Manual of Style (16th Edition):

Li, Xin. “BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2016. Doctoral Dissertation, Georgia Tech. Accessed May 26, 2019. http://hdl.handle.net/1853/55561.

MLA Handbook (7th Edition):

Li, Xin. “BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2016. Web. 26 May 2019.

Vancouver:

Li X. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 May 26]. Available from: http://hdl.handle.net/1853/55561.

Council of Science Editors:

Li X. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55561


Linköping University

13. Nilsson, Daniel. Simulation of cubic GaN growth in SA MOVPE.

Degree: Chemistry and Biology, 2009, Linköping University

  In this work growth of cubic GaN in the selective area (SA) MOVPE process is simulated. The simulations are restricted to small pattern SA… (more)

Subjects/Keywords: simulation; gallium nitride; SAG MOVPE; anisotropic; Physics; Fysik

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APA (6th Edition):

Nilsson, D. (2009). Simulation of cubic GaN growth in SA MOVPE. (Thesis). Linköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17682

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Nilsson, Daniel. “Simulation of cubic GaN growth in SA MOVPE.” 2009. Thesis, Linköping University. Accessed May 26, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17682.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Nilsson, Daniel. “Simulation of cubic GaN growth in SA MOVPE.” 2009. Web. 26 May 2019.

Vancouver:

Nilsson D. Simulation of cubic GaN growth in SA MOVPE. [Internet] [Thesis]. Linköping University; 2009. [cited 2019 May 26]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17682.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Nilsson D. Simulation of cubic GaN growth in SA MOVPE. [Thesis]. Linköping University; 2009. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-17682

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

14. Riikonen, Juha. Self-Assembled Nanorings and Stressor Quantum Dots.

Degree: 2006, Helsinki University of Technology

In this thesis, the main focus is in the fabrication and characterization of self-assembled III-V compound semiconductor nanostructures. The samples were fabricated by metalorganic vapor… (more)

Subjects/Keywords: MOVPE; epitaxy; nanotechnology; self-assembled; compound semiconductor; quantum dot; nanoring; quantum ring; passivation; MOVPE; epitaksia; nanoteknologia; itsejärjestäytyvä; yhdistepuolijohde; kvanttipiste; kvanttirengas; nanorengas; passivointi

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APA (6th Edition):

Riikonen, J. (2006). Self-Assembled Nanorings and Stressor Quantum Dots. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2006/isbn9512281821/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Riikonen, Juha. “Self-Assembled Nanorings and Stressor Quantum Dots.” 2006. Thesis, Helsinki University of Technology. Accessed May 26, 2019. http://lib.tkk.fi/Diss/2006/isbn9512281821/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Riikonen, Juha. “Self-Assembled Nanorings and Stressor Quantum Dots.” 2006. Web. 26 May 2019.

Vancouver:

Riikonen J. Self-Assembled Nanorings and Stressor Quantum Dots. [Internet] [Thesis]. Helsinki University of Technology; 2006. [cited 2019 May 26]. Available from: http://lib.tkk.fi/Diss/2006/isbn9512281821/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Riikonen J. Self-Assembled Nanorings and Stressor Quantum Dots. [Thesis]. Helsinki University of Technology; 2006. Available from: http://lib.tkk.fi/Diss/2006/isbn9512281821/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. Gamarra, Piero. Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs).

Degree: Docteur es, Matériaux, 2013, Université Claude Bernard – Lyon I

Cette thèse est une contribution à l'étude de composés semiconducteurs InX Al1-X N à forte teneur en Indium. Ces composés présentent des propriétés très intéressantes… (more)

Subjects/Keywords: MOVPE; High Electron Mobility Transistors; InAlN; GaN; AlGaN; Nitrures; Croissance Epitaxiale; III-N; MOVPE; High Electron Mobility Transistors; InAlN; GaN; AlGaN; Nitride Semiconductors; Epitaxy; III-N; 530.4

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APA (6th Edition):

Gamarra, P. (2013). Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs). (Doctoral Dissertation). Université Claude Bernard – Lyon I. Retrieved from http://www.theses.fr/2013LYO10009

Chicago Manual of Style (16th Edition):

Gamarra, Piero. “Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs).” 2013. Doctoral Dissertation, Université Claude Bernard – Lyon I. Accessed May 26, 2019. http://www.theses.fr/2013LYO10009.

MLA Handbook (7th Edition):

Gamarra, Piero. “Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs).” 2013. Web. 26 May 2019.

Vancouver:

Gamarra P. Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs). [Internet] [Doctoral dissertation]. Université Claude Bernard – Lyon I; 2013. [cited 2019 May 26]. Available from: http://www.theses.fr/2013LYO10009.

Council of Science Editors:

Gamarra P. Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs). [Doctoral Dissertation]. Université Claude Bernard – Lyon I; 2013. Available from: http://www.theses.fr/2013LYO10009

16. Soresi, Stefano. InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE.

Degree: Docteur es, Électronique, 2018, Montpellier

 Cette thèse s’intéresse à l'intégration sur Si de cellules solaires III-V à simple et double jonction par épitaxie en phase vapeur aux organo-métalliques (MOVPE). Les… (more)

Subjects/Keywords: Cellules solaires tandem; III-V/Si; Movpe; Techno; InP/InGaAs; Jonctions tunnel; Tandem solar cells; III-V/Si; Movpe; Processing; InP/InGaAs; Tunnel junctions

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APA (6th Edition):

Soresi, S. (2018). InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE. (Doctoral Dissertation). Montpellier. Retrieved from http://www.theses.fr/2018MONTS021

Chicago Manual of Style (16th Edition):

Soresi, Stefano. “InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE.” 2018. Doctoral Dissertation, Montpellier. Accessed May 26, 2019. http://www.theses.fr/2018MONTS021.

MLA Handbook (7th Edition):

Soresi, Stefano. “InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE.” 2018. Web. 26 May 2019.

Vancouver:

Soresi S. InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE. [Internet] [Doctoral dissertation]. Montpellier; 2018. [cited 2019 May 26]. Available from: http://www.theses.fr/2018MONTS021.

Council of Science Editors:

Soresi S. InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE. [Doctoral Dissertation]. Montpellier; 2018. Available from: http://www.theses.fr/2018MONTS021

17. Mukhtarova, Anna. Puits quantiques de composés nitrures InGaN/GaN pour le photovaoltaique : InGaN/GaN Multiple Quantum Wells for Photovoltaics.

Degree: Docteur es, Nanophysique, 2015, Grenoble Alpes

Ce travail traite de la croissance épitaxiale et de la caractérisation d’hétérostructures àbase de multi-puits quantiques (MPQ) pour des applications dans le photovoltaïque. Leséchantillons ont… (more)

Subjects/Keywords: InGaN/GaN; Puits quantiques; EPVOM; Cellules solaires; InGaN/GaN; Quantum well; MOVPE; Solar cell; 530

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APA (6th Edition):

Mukhtarova, A. (2015). Puits quantiques de composés nitrures InGaN/GaN pour le photovaoltaique : InGaN/GaN Multiple Quantum Wells for Photovoltaics. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAY008

Chicago Manual of Style (16th Edition):

Mukhtarova, Anna. “Puits quantiques de composés nitrures InGaN/GaN pour le photovaoltaique : InGaN/GaN Multiple Quantum Wells for Photovoltaics.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed May 26, 2019. http://www.theses.fr/2015GREAY008.

MLA Handbook (7th Edition):

Mukhtarova, Anna. “Puits quantiques de composés nitrures InGaN/GaN pour le photovaoltaique : InGaN/GaN Multiple Quantum Wells for Photovoltaics.” 2015. Web. 26 May 2019.

Vancouver:

Mukhtarova A. Puits quantiques de composés nitrures InGaN/GaN pour le photovaoltaique : InGaN/GaN Multiple Quantum Wells for Photovoltaics. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2019 May 26]. Available from: http://www.theses.fr/2015GREAY008.

Council of Science Editors:

Mukhtarova A. Puits quantiques de composés nitrures InGaN/GaN pour le photovaoltaique : InGaN/GaN Multiple Quantum Wells for Photovoltaics. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAY008

18. Baghdadli, Tewfik. Etude des propriétés structurales et électroniques de nouveaux matériaux à base d'alliages III-N pour l'optoélectronique : Electrical and structural properties of the new III-N alloys for optoelectronics devices.

Degree: Docteur es, Sciences des matériaux, 2009, Metz; Université Abou Bekr Belkaid (Tlemcen, Algérie)

Cette thèse portait sur la caractérisation électrique et optique de nouveaux matériaux à base d'alliages III-N pour l’optoélectronique et la mise en œuvre de procédés… (more)

Subjects/Keywords: Caractérisation électrique; Spectroscopie Raman; Résistivité; BGaN; Nitrures; MOVPE; Contact ohmique; Contact Schottky

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APA (6th Edition):

Baghdadli, T. (2009). Etude des propriétés structurales et électroniques de nouveaux matériaux à base d'alliages III-N pour l'optoélectronique : Electrical and structural properties of the new III-N alloys for optoelectronics devices. (Doctoral Dissertation). Metz; Université Abou Bekr Belkaid (Tlemcen, Algérie). Retrieved from http://www.theses.fr/2009METZ019S

Chicago Manual of Style (16th Edition):

Baghdadli, Tewfik. “Etude des propriétés structurales et électroniques de nouveaux matériaux à base d'alliages III-N pour l'optoélectronique : Electrical and structural properties of the new III-N alloys for optoelectronics devices.” 2009. Doctoral Dissertation, Metz; Université Abou Bekr Belkaid (Tlemcen, Algérie). Accessed May 26, 2019. http://www.theses.fr/2009METZ019S.

MLA Handbook (7th Edition):

Baghdadli, Tewfik. “Etude des propriétés structurales et électroniques de nouveaux matériaux à base d'alliages III-N pour l'optoélectronique : Electrical and structural properties of the new III-N alloys for optoelectronics devices.” 2009. Web. 26 May 2019.

Vancouver:

Baghdadli T. Etude des propriétés structurales et électroniques de nouveaux matériaux à base d'alliages III-N pour l'optoélectronique : Electrical and structural properties of the new III-N alloys for optoelectronics devices. [Internet] [Doctoral dissertation]. Metz; Université Abou Bekr Belkaid (Tlemcen, Algérie); 2009. [cited 2019 May 26]. Available from: http://www.theses.fr/2009METZ019S.

Council of Science Editors:

Baghdadli T. Etude des propriétés structurales et électroniques de nouveaux matériaux à base d'alliages III-N pour l'optoélectronique : Electrical and structural properties of the new III-N alloys for optoelectronics devices. [Doctoral Dissertation]. Metz; Université Abou Bekr Belkaid (Tlemcen, Algérie); 2009. Available from: http://www.theses.fr/2009METZ019S


Australian National University

19. Burgess, Timothy. From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy .

Degree: 2017, Australian National University

 As conventional methods of semiconductor fabrication approach fundamental physical limits, new paradigms are required for progress. One concept with the potential to deliver such a… (more)

Subjects/Keywords: Nanotechnology; nanowires; epitaxy; III-V; II-V; zinc arsenide; zinc phosphide; MOCVD; MOVPE

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APA (6th Edition):

Burgess, T. (2017). From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/144611

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Burgess, Timothy. “From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy .” 2017. Thesis, Australian National University. Accessed May 26, 2019. http://hdl.handle.net/1885/144611.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Burgess, Timothy. “From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy .” 2017. Web. 26 May 2019.

Vancouver:

Burgess T. From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy . [Internet] [Thesis]. Australian National University; 2017. [cited 2019 May 26]. Available from: http://hdl.handle.net/1885/144611.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Burgess T. From Dopant to Source: The Use of Zinc as an Enabler in the Synthesis of Nanostructures by Metalorganic Vapour Phase Epitaxy . [Thesis]. Australian National University; 2017. Available from: http://hdl.handle.net/1885/144611

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

20. Smith, Brittany L. Development and Life Cycle Assessment of Advanced-Concept III-V Multijunction Photovoltaics.

Degree: PhD, Sustainability (GIS), 2018, Rochester Institute of Technology

  III-V semiconductors make for highly efficient solar cells, but are expensive to manufacture. However, there are many mechanisms for improving III-V photovoltaics in order… (more)

Subjects/Keywords: Concentrator; iii-V; Life cycle assessment; Metal organic vapor phase epitaxy; MOVPE; Photovoltaics

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APA (6th Edition):

Smith, B. L. (2018). Development and Life Cycle Assessment of Advanced-Concept III-V Multijunction Photovoltaics. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/9877

Chicago Manual of Style (16th Edition):

Smith, Brittany L. “Development and Life Cycle Assessment of Advanced-Concept III-V Multijunction Photovoltaics.” 2018. Doctoral Dissertation, Rochester Institute of Technology. Accessed May 26, 2019. https://scholarworks.rit.edu/theses/9877.

MLA Handbook (7th Edition):

Smith, Brittany L. “Development and Life Cycle Assessment of Advanced-Concept III-V Multijunction Photovoltaics.” 2018. Web. 26 May 2019.

Vancouver:

Smith BL. Development and Life Cycle Assessment of Advanced-Concept III-V Multijunction Photovoltaics. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2018. [cited 2019 May 26]. Available from: https://scholarworks.rit.edu/theses/9877.

Council of Science Editors:

Smith BL. Development and Life Cycle Assessment of Advanced-Concept III-V Multijunction Photovoltaics. [Doctoral Dissertation]. Rochester Institute of Technology; 2018. Available from: https://scholarworks.rit.edu/theses/9877


North Carolina State University

21. Park, Ji-Soo. Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 AlGaN-based thin film heterostructures have been grown and fabricated into ultraviolet light emitting diodes with and without p-type and/or n-type AlGaN carrier-blocking layers at the… (more)

Subjects/Keywords: SiC; MOVPE; GaN; AlGaN; UV LEDs

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APA (6th Edition):

Park, J. (2005). Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4120

Chicago Manual of Style (16th Edition):

Park, Ji-Soo. “Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes.” 2005. Doctoral Dissertation, North Carolina State University. Accessed May 26, 2019. http://www.lib.ncsu.edu/resolver/1840.16/4120.

MLA Handbook (7th Edition):

Park, Ji-Soo. “Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes.” 2005. Web. 26 May 2019.

Vancouver:

Park J. Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2019 May 26]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4120.

Council of Science Editors:

Park J. Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4120


Kyoto University / 京都大学

22. Tsujimura, Ayumu. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長.

Degree: 博士(工学), 2012, Kyoto University / 京都大学

新制・論文博士

乙第12695号

論工博第4084号

Subjects/Keywords: ZnSe; GaN; laser diode; MBE; MOVPE; epitaxial growth

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APA (6th Edition):

Tsujimura, A. (2012). Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長. (Thesis). Kyoto University / 京都大学. Retrieved from http://hdl.handle.net/2433/161023 ; http://dx.doi.org/10.14989/doctor.r12695

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tsujimura, Ayumu. “Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長.” 2012. Thesis, Kyoto University / 京都大学. Accessed May 26, 2019. http://hdl.handle.net/2433/161023 ; http://dx.doi.org/10.14989/doctor.r12695.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tsujimura, Ayumu. “Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長.” 2012. Web. 26 May 2019.

Vancouver:

Tsujimura A. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長. [Internet] [Thesis]. Kyoto University / 京都大学; 2012. [cited 2019 May 26]. Available from: http://hdl.handle.net/2433/161023 ; http://dx.doi.org/10.14989/doctor.r12695.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tsujimura A. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes : 半導体レーザ用ワイドバンドギャップ化合物半導体のエピタキシャル成長. [Thesis]. Kyoto University / 京都大学; 2012. Available from: http://hdl.handle.net/2433/161023 ; http://dx.doi.org/10.14989/doctor.r12695

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

23. Abid, Mohamed. Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength.

Degree: PhD, Electrical and Computer Engineering, 2013, Georgia Tech

 One of the key advances in photonic technology in recent decades was the development of a new type of diode lasers emitting in the visible… (more)

Subjects/Keywords: VCSEL; MOVPE; DBR; Photonics; Lasers; Optoelectronic devices

…4.4.1 MOVPE BGaN growth 95 4.4.2 Morphological and structural characterizations 98… …materials 103 109 4.5.1 MOVPE BAlN growth 109 4.5.2 Surface morphology and structural… …epitaxial growth. 38 x Figure 18: MOVPE setup and growth chamber. 39 Figure 19: In situ… …MOVPE). 3 Figure 3: Bandgap energy versus in-plane lattice parameter diagram for III-N… …Heterostructures and growth challenges Major recent breakthroughs in the MOVPE growth of high-quality… 

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APA (6th Edition):

Abid, M. (2013). Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/47682

Chicago Manual of Style (16th Edition):

Abid, Mohamed. “Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength.” 2013. Doctoral Dissertation, Georgia Tech. Accessed May 26, 2019. http://hdl.handle.net/1853/47682.

MLA Handbook (7th Edition):

Abid, Mohamed. “Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength.” 2013. Web. 26 May 2019.

Vancouver:

Abid M. Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2019 May 26]. Available from: http://hdl.handle.net/1853/47682.

Council of Science Editors:

Abid M. Design and epitaxial growth of vertical cavity surface-emitting lasers (VCSEL) emitting at ultraviolet wavelength. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/47682

24. Laval, Gautier. Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2017, Grenoble Alpes

Les diodes électroluminescentes (LEDs) utilisées dans les systèmes d'éclairage solide sont réalisées à base de GaN et de ses alliages. Bien que les LEDs commerciales… (more)

Subjects/Keywords: GaN; Silicium; Epvom; Croissance sélective; Optoélectronique; Micro-LEDs; GaN; Silicon; Movpe; Selective area growth; Optoelectronic; Micro-LEDs; 620

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APA (6th Edition):

Laval, G. (2017). Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2017GREAT018

Chicago Manual of Style (16th Edition):

Laval, Gautier. “Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications.” 2017. Doctoral Dissertation, Grenoble Alpes. Accessed May 26, 2019. http://www.theses.fr/2017GREAT018.

MLA Handbook (7th Edition):

Laval, Gautier. “Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications.” 2017. Web. 26 May 2019.

Vancouver:

Laval G. Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2017. [cited 2019 May 26]. Available from: http://www.theses.fr/2017GREAT018.

Council of Science Editors:

Laval G. Croissance sélective de pseudo-substrats de GaN sur silicium pour des applications optoélectroniques : Selective area growth of GaN pseudo-substrates on silicon for optoelectronic applications. [Doctoral Dissertation]. Grenoble Alpes; 2017. Available from: http://www.theses.fr/2017GREAT018


University of Lund

25. Wu, Jun. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors.

Degree: 2016, University of Lund

 The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry… (more)

Subjects/Keywords: Elektroteknik och elektronik; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit

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APA (6th Edition):

Wu, J. (2016). Vertical III-V/High-k Nanowire MOS Capacitors and Transistors. (Doctoral Dissertation). University of Lund. Retrieved from http://lup.lub.lu.se/record/8865209 ; http://portal.research.lu.se/ws/files/5984513/8865239.pdf

Chicago Manual of Style (16th Edition):

Wu, Jun. “Vertical III-V/High-k Nanowire MOS Capacitors and Transistors.” 2016. Doctoral Dissertation, University of Lund. Accessed May 26, 2019. http://lup.lub.lu.se/record/8865209 ; http://portal.research.lu.se/ws/files/5984513/8865239.pdf.

MLA Handbook (7th Edition):

Wu, Jun. “Vertical III-V/High-k Nanowire MOS Capacitors and Transistors.” 2016. Web. 26 May 2019.

Vancouver:

Wu J. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors. [Internet] [Doctoral dissertation]. University of Lund; 2016. [cited 2019 May 26]. Available from: http://lup.lub.lu.se/record/8865209 ; http://portal.research.lu.se/ws/files/5984513/8865239.pdf.

Council of Science Editors:

Wu J. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors. [Doctoral Dissertation]. University of Lund; 2016. Available from: http://lup.lub.lu.se/record/8865209 ; http://portal.research.lu.se/ws/files/5984513/8865239.pdf


University of Lund

26. Heurlin, Magnus. Growth of Semiconductor Nanowires for Solar Cell Applications.

Degree: 2015, University of Lund

 Nanowires have the ability to absorb light much more efficient than conventional thin film layers. This makes them candidates for the development of new types… (more)

Subjects/Keywords: Den kondenserade materiens fysik; Nanoteknik; MOVPE; Aerotaxy; III-V semiconductor materials; nanowire; solar cells; photovoltaics; Fysicumarkivet A:2015:Heurlin

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APA (6th Edition):

Heurlin, M. (2015). Growth of Semiconductor Nanowires for Solar Cell Applications. (Doctoral Dissertation). University of Lund. Retrieved from http://lup.lub.lu.se/record/8084551 ; http://portal.research.lu.se/ws/files/6374847/8084554.pdf

Chicago Manual of Style (16th Edition):

Heurlin, Magnus. “Growth of Semiconductor Nanowires for Solar Cell Applications.” 2015. Doctoral Dissertation, University of Lund. Accessed May 26, 2019. http://lup.lub.lu.se/record/8084551 ; http://portal.research.lu.se/ws/files/6374847/8084554.pdf.

MLA Handbook (7th Edition):

Heurlin, Magnus. “Growth of Semiconductor Nanowires for Solar Cell Applications.” 2015. Web. 26 May 2019.

Vancouver:

Heurlin M. Growth of Semiconductor Nanowires for Solar Cell Applications. [Internet] [Doctoral dissertation]. University of Lund; 2015. [cited 2019 May 26]. Available from: http://lup.lub.lu.se/record/8084551 ; http://portal.research.lu.se/ws/files/6374847/8084554.pdf.

Council of Science Editors:

Heurlin M. Growth of Semiconductor Nanowires for Solar Cell Applications. [Doctoral Dissertation]. University of Lund; 2015. Available from: http://lup.lub.lu.se/record/8084551 ; http://portal.research.lu.se/ws/files/6374847/8084554.pdf

27. 出浦, 桃子. III/V族化合物半導体MOVPEにおける界面急峻化に向けた表面in situ観察と速度過程解析 : In situ surface observation and kinetic analysis for abrupt hetero-interfaces in MOVPE of III/V compound semiconductors.

Degree: 修士(工学), 2017, The University of Tokyo / 東京大学

Subjects/Keywords: MOVPE; 化合物半導体

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

出浦, . (2017). III/V族化合物半導体MOVPEにおける界面急峻化に向けた表面in situ観察と速度過程解析 : In situ surface observation and kinetic analysis for abrupt hetero-interfaces in MOVPE of III/V compound semiconductors. (Thesis). The University of Tokyo / 東京大学. Retrieved from http://hdl.handle.net/2261/29067

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

出浦, 桃子. “III/V族化合物半導体MOVPEにおける界面急峻化に向けた表面in situ観察と速度過程解析 : In situ surface observation and kinetic analysis for abrupt hetero-interfaces in MOVPE of III/V compound semiconductors.” 2017. Thesis, The University of Tokyo / 東京大学. Accessed May 26, 2019. http://hdl.handle.net/2261/29067.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

出浦, 桃子. “III/V族化合物半導体MOVPEにおける界面急峻化に向けた表面in situ観察と速度過程解析 : In situ surface observation and kinetic analysis for abrupt hetero-interfaces in MOVPE of III/V compound semiconductors.” 2017. Web. 26 May 2019.

Vancouver:

出浦 . III/V族化合物半導体MOVPEにおける界面急峻化に向けた表面in situ観察と速度過程解析 : In situ surface observation and kinetic analysis for abrupt hetero-interfaces in MOVPE of III/V compound semiconductors. [Internet] [Thesis]. The University of Tokyo / 東京大学; 2017. [cited 2019 May 26]. Available from: http://hdl.handle.net/2261/29067.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

出浦 . III/V族化合物半導体MOVPEにおける界面急峻化に向けた表面in situ観察と速度過程解析 : In situ surface observation and kinetic analysis for abrupt hetero-interfaces in MOVPE of III/V compound semiconductors. [Thesis]. The University of Tokyo / 東京大学; 2017. Available from: http://hdl.handle.net/2261/29067

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

28. 菊地, 健彦. Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨).

Degree: 修士(科学), 2017, The University of Tokyo / 東京大学

Subjects/Keywords: MOVPE; InGaAsN; Ge基板; 太陽電池

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APA (6th Edition):

菊地, . (2017). Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨). (Thesis). The University of Tokyo / 東京大学. Retrieved from http://hdl.handle.net/2261/48809

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

菊地, 健彦. “Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨).” 2017. Thesis, The University of Tokyo / 東京大学. Accessed May 26, 2019. http://hdl.handle.net/2261/48809.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

菊地, 健彦. “Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨).” 2017. Web. 26 May 2019.

Vancouver:

菊地 . Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨). [Internet] [Thesis]. The University of Tokyo / 東京大学; 2017. [cited 2019 May 26]. Available from: http://hdl.handle.net/2261/48809.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

菊地 . Ge(001)基板上へのInGaAsN薄膜のMOVPE成長(要旨). [Thesis]. The University of Tokyo / 東京大学; 2017. Available from: http://hdl.handle.net/2261/48809

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Kyoto University

29. Tsujimura, Ayumu. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes .

Degree: 2012, Kyoto University

Subjects/Keywords: ZnSe; GaN; laser diode; MBE; MOVPE; epitaxial growth

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APA (6th Edition):

Tsujimura, A. (2012). Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes . (Thesis). Kyoto University. Retrieved from http://hdl.handle.net/2433/161023

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tsujimura, Ayumu. “Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes .” 2012. Thesis, Kyoto University. Accessed May 26, 2019. http://hdl.handle.net/2433/161023.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tsujimura, Ayumu. “Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes .” 2012. Web. 26 May 2019.

Vancouver:

Tsujimura A. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes . [Internet] [Thesis]. Kyoto University; 2012. [cited 2019 May 26]. Available from: http://hdl.handle.net/2433/161023.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tsujimura A. Epitaxial Growth of Wide Bandgap Compound Semiconductors for Laser Diodes . [Thesis]. Kyoto University; 2012. Available from: http://hdl.handle.net/2433/161023

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

30. Dowdy, Ryan S. Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition.

Degree: MS, 1200, 2010, University of Illinois – Urbana-Champaign

 Planar <110> GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them… (more)

Subjects/Keywords: nanowire; Vapor-liquid-solid (VLS); III-V; quantum dot; gaas; offcut; suspended; zinc; Indium Arsenide (InAs); nanostructure; movpe; mocvd

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APA (6th Edition):

Dowdy, R. S. (2010). Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/14672

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dowdy, Ryan S. “Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition.” 2010. Thesis, University of Illinois – Urbana-Champaign. Accessed May 26, 2019. http://hdl.handle.net/2142/14672.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dowdy, Ryan S. “Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition.” 2010. Web. 26 May 2019.

Vancouver:

Dowdy RS. Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 May 26]. Available from: http://hdl.handle.net/2142/14672.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dowdy RS. Growth and characterization of III-V compound semiconductor nanostructures by metalorganic chemical vapor deposition. [Thesis]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/14672

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2]

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