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You searched for subject:(MOSFET). Showing records 1 – 30 of 496 total matches.

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University of Cincinnati

1. ARNOLD, MARTIN KEITH, JR. SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW.

Degree: MS, Engineering : Electrical Engineering, 2007, University of Cincinnati

 The purpose of this study is to examine the performance capabilities and scaling behavior of short channel Ge-based n-MOSFETs using a commercial numerical device simulator… (more)

Subjects/Keywords: germanium; mosfet

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APA (6th Edition):

ARNOLD, MARTIN KEITH, J. (2007). SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528

Chicago Manual of Style (16th Edition):

ARNOLD, MARTIN KEITH, JR. “SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW.” 2007. Masters Thesis, University of Cincinnati. Accessed February 22, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528.

MLA Handbook (7th Edition):

ARNOLD, MARTIN KEITH, JR. “SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW.” 2007. Web. 22 Feb 2020.

Vancouver:

ARNOLD, MARTIN KEITH J. SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW. [Internet] [Masters thesis]. University of Cincinnati; 2007. [cited 2020 Feb 22]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528.

Council of Science Editors:

ARNOLD, MARTIN KEITH J. SIMULATION AND DESIGN OF GERMANIUM-BASED MOSFETs FOR CHANNEL LENGTHS OF 100 nm AND BELOW. [Masters Thesis]. University of Cincinnati; 2007. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1175024528

2. Maréchal, Aurélien. Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis : Capacité métal-oxyde-semiconducteur pour le transistor en diamant : simulation, fabrication et caractérisation électrique.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes

 Plus de deux décennies de progrès technologiques dans le contrôle de la qualité de la croissance, du dopage et dans la conception de composants ont… (more)

Subjects/Keywords: Mosfet; Diamant; Simulation; Mosfet; Diamond; Simulation; 620

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APA (6th Edition):

Maréchal, A. (2015). Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis : Capacité métal-oxyde-semiconducteur pour le transistor en diamant : simulation, fabrication et caractérisation électrique. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAT094

Chicago Manual of Style (16th Edition):

Maréchal, Aurélien. “Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis : Capacité métal-oxyde-semiconducteur pour le transistor en diamant : simulation, fabrication et caractérisation électrique.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed February 22, 2020. http://www.theses.fr/2015GREAT094.

MLA Handbook (7th Edition):

Maréchal, Aurélien. “Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis : Capacité métal-oxyde-semiconducteur pour le transistor en diamant : simulation, fabrication et caractérisation électrique.” 2015. Web. 22 Feb 2020.

Vancouver:

Maréchal A. Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis : Capacité métal-oxyde-semiconducteur pour le transistor en diamant : simulation, fabrication et caractérisation électrique. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2020 Feb 22]. Available from: http://www.theses.fr/2015GREAT094.

Council of Science Editors:

Maréchal A. Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis : Capacité métal-oxyde-semiconducteur pour le transistor en diamant : simulation, fabrication et caractérisation électrique. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAT094


Université Montpellier II

3. Constant, Aurore. SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC.

Degree: Docteur es, Physique, 2011, Université Montpellier II

De nos jours, les dispositifs d'électroniques de puissance sont principalement basés sur la technologie silicium qui est mature et très bien établie. Toutefois, le silicium… (more)

Subjects/Keywords: SiC; Oxydation; Mosfet; SiC; Oxidation; Mosfet

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APA (6th Edition):

Constant, A. (2011). SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2011MON20061

Chicago Manual of Style (16th Edition):

Constant, Aurore. “SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC.” 2011. Doctoral Dissertation, Université Montpellier II. Accessed February 22, 2020. http://www.theses.fr/2011MON20061.

MLA Handbook (7th Edition):

Constant, Aurore. “SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC.” 2011. Web. 22 Feb 2020.

Vancouver:

Constant A. SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC. [Internet] [Doctoral dissertation]. Université Montpellier II; 2011. [cited 2020 Feb 22]. Available from: http://www.theses.fr/2011MON20061.

Council of Science Editors:

Constant A. SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC. [Doctoral Dissertation]. Université Montpellier II; 2011. Available from: http://www.theses.fr/2011MON20061


University of Alberta

4. Bothe, Kyle M. Enhancement-mode Polar Sourced Gallium Nitride MOSFET.

Degree: PhD, Department of Electrical and Computer Engineering, 2015, University of Alberta

 All commercially fabricated Gallium Nitride (GaN) based power transistors to date have been heterojunction field effect transistors (HFET). The major down fall of this design… (more)

Subjects/Keywords: GaN MOSFET; PEALD

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APA (6th Edition):

Bothe, K. M. (2015). Enhancement-mode Polar Sourced Gallium Nitride MOSFET. (Doctoral Dissertation). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/cc534fp125

Chicago Manual of Style (16th Edition):

Bothe, Kyle M. “Enhancement-mode Polar Sourced Gallium Nitride MOSFET.” 2015. Doctoral Dissertation, University of Alberta. Accessed February 22, 2020. https://era.library.ualberta.ca/files/cc534fp125.

MLA Handbook (7th Edition):

Bothe, Kyle M. “Enhancement-mode Polar Sourced Gallium Nitride MOSFET.” 2015. Web. 22 Feb 2020.

Vancouver:

Bothe KM. Enhancement-mode Polar Sourced Gallium Nitride MOSFET. [Internet] [Doctoral dissertation]. University of Alberta; 2015. [cited 2020 Feb 22]. Available from: https://era.library.ualberta.ca/files/cc534fp125.

Council of Science Editors:

Bothe KM. Enhancement-mode Polar Sourced Gallium Nitride MOSFET. [Doctoral Dissertation]. University of Alberta; 2015. Available from: https://era.library.ualberta.ca/files/cc534fp125


McMaster University

5. Chen, Xuesong. Noise Characterization and Modeling of Nanoscale MOSFETs.

Degree: PhD, 2017, McMaster University

High-frequency noise modeling and characterization of nanoscale MOSFETs are essential driving forces for highly scaled CMOS technology to be used in radio-frequency applications. Continuous downscaling… (more)

Subjects/Keywords: Microelectronics; MOSFET; Noise

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APA (6th Edition):

Chen, X. (2017). Noise Characterization and Modeling of Nanoscale MOSFETs. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/22004

Chicago Manual of Style (16th Edition):

Chen, Xuesong. “Noise Characterization and Modeling of Nanoscale MOSFETs.” 2017. Doctoral Dissertation, McMaster University. Accessed February 22, 2020. http://hdl.handle.net/11375/22004.

MLA Handbook (7th Edition):

Chen, Xuesong. “Noise Characterization and Modeling of Nanoscale MOSFETs.” 2017. Web. 22 Feb 2020.

Vancouver:

Chen X. Noise Characterization and Modeling of Nanoscale MOSFETs. [Internet] [Doctoral dissertation]. McMaster University; 2017. [cited 2020 Feb 22]. Available from: http://hdl.handle.net/11375/22004.

Council of Science Editors:

Chen X. Noise Characterization and Modeling of Nanoscale MOSFETs. [Doctoral Dissertation]. McMaster University; 2017. Available from: http://hdl.handle.net/11375/22004

6. GONÇALVES FILHO, Luiz Carlos. Resposta com a dose de MOSFET canal N comercial submetido a feixes raios X filtrado .

Degree: 2018, Universidade Federal de Pernambuco

 O MOSFET pode operar como um detector de radiação em feixes de radioterapia, para tratamento de câncer, por exemplo. Esse dispositivo eletrônico pode atuar como… (more)

Subjects/Keywords: MOSFET; Radiação; Dosímetro

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APA (6th Edition):

GONÇALVES FILHO, L. C. (2018). Resposta com a dose de MOSFET canal N comercial submetido a feixes raios X filtrado . (Masters Thesis). Universidade Federal de Pernambuco. Retrieved from https://repositorio.ufpe.br/handle/123456789/30566

Chicago Manual of Style (16th Edition):

GONÇALVES FILHO, Luiz Carlos. “Resposta com a dose de MOSFET canal N comercial submetido a feixes raios X filtrado .” 2018. Masters Thesis, Universidade Federal de Pernambuco. Accessed February 22, 2020. https://repositorio.ufpe.br/handle/123456789/30566.

MLA Handbook (7th Edition):

GONÇALVES FILHO, Luiz Carlos. “Resposta com a dose de MOSFET canal N comercial submetido a feixes raios X filtrado .” 2018. Web. 22 Feb 2020.

Vancouver:

GONÇALVES FILHO LC. Resposta com a dose de MOSFET canal N comercial submetido a feixes raios X filtrado . [Internet] [Masters thesis]. Universidade Federal de Pernambuco; 2018. [cited 2020 Feb 22]. Available from: https://repositorio.ufpe.br/handle/123456789/30566.

Council of Science Editors:

GONÇALVES FILHO LC. Resposta com a dose de MOSFET canal N comercial submetido a feixes raios X filtrado . [Masters Thesis]. Universidade Federal de Pernambuco; 2018. Available from: https://repositorio.ufpe.br/handle/123456789/30566

7. Salonen, Janne. IGBT-transistori .

Degree: 2013, Theseus

 Työn tavoitteena on tutustua IGBT-transistorin toimintaan. Sain aiheen opinnäytetyöhön opettajan vinkistä, ja sattumalta luin myös Tekniikan Maailma-lehteä, jossa kerrottiin sähkövetureista. Sähkövetureissa käytettiin IGBT-transistoria sähkömoottorin ohjaukseen.… (more)

Subjects/Keywords: IGBT-transistori; MOSFET

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APA (6th Edition):

Salonen, J. (2013). IGBT-transistori . (Thesis). Theseus. Retrieved from http://www.theseus.fi/handle/10024/68395

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Salonen, Janne. “IGBT-transistori .” 2013. Thesis, Theseus. Accessed February 22, 2020. http://www.theseus.fi/handle/10024/68395.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Salonen, Janne. “IGBT-transistori .” 2013. Web. 22 Feb 2020.

Vancouver:

Salonen J. IGBT-transistori . [Internet] [Thesis]. Theseus; 2013. [cited 2020 Feb 22]. Available from: http://www.theseus.fi/handle/10024/68395.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Salonen J. IGBT-transistori . [Thesis]. Theseus; 2013. Available from: http://www.theseus.fi/handle/10024/68395

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. Madani, Hassan. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.

Degree: 2013, Université M'Hamed Bougara Boumerdès

107 p. : ill. ; 30 cm

Le but de développer des méthodes de caractérisations fiables est de prévoir la dégradation des circuits intégrés fonctionnement… (more)

Subjects/Keywords: Irradiation; MOS (électronique); Transistors MOSFET

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APA (6th Edition):

Madani, H. (2013). Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080123456789/1463

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Madani, Hassan. “Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.” 2013. Thesis, Université M'Hamed Bougara Boumerdès. Accessed February 22, 2020. http://dlibrary.univ-boumerdes.dz:8080123456789/1463.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Madani, Hassan. “Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.” 2013. Web. 22 Feb 2020.

Vancouver:

Madani H. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2013. [cited 2020 Feb 22]. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1463.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Madani H. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. [Thesis]. Université M'Hamed Bougara Boumerdès; 2013. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1463

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

9. Bharanidharan, G. A study on the evaluation of mosfet Detector for in vivo dosimetry; -.

Degree: Science and Humanities, 2014, Anna University

Cancer is one of the dreadful diseases and it is a burgeoning health newlineproblem globally It has been defined as a group of abnormal mass… (more)

Subjects/Keywords: mosfet Detector; Science and humanities

Page 1

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APA (6th Edition):

Bharanidharan, G. (2014). A study on the evaluation of mosfet Detector for in vivo dosimetry; -. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/26739

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bharanidharan, G. “A study on the evaluation of mosfet Detector for in vivo dosimetry; -.” 2014. Thesis, Anna University. Accessed February 22, 2020. http://shodhganga.inflibnet.ac.in/handle/10603/26739.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bharanidharan, G. “A study on the evaluation of mosfet Detector for in vivo dosimetry; -.” 2014. Web. 22 Feb 2020.

Vancouver:

Bharanidharan G. A study on the evaluation of mosfet Detector for in vivo dosimetry; -. [Internet] [Thesis]. Anna University; 2014. [cited 2020 Feb 22]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/26739.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bharanidharan G. A study on the evaluation of mosfet Detector for in vivo dosimetry; -. [Thesis]. Anna University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/26739

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. Madani, Hassan. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.

Degree: 2013, Université M'Hamed Bougara Boumerdès

107 p. : ill. ; 30 cm

Le but de développer des méthodes de caractérisations fiables est de prévoir la dégradation des circuits intégrés fonctionnement… (more)

Subjects/Keywords: Irradiation; MOS (électronique); Transistors MOSFET

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APA (6th Edition):

Madani, H. (2013). Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1604

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Madani, Hassan. “Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.” 2013. Thesis, Université M'Hamed Bougara Boumerdès. Accessed February 22, 2020. http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1604.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Madani, Hassan. “Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge.” 2013. Web. 22 Feb 2020.

Vancouver:

Madani H. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2013. [cited 2020 Feb 22]. Available from: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1604.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Madani H. Caractérisation de l’effet d’irradiation sur les transistors LDD MOSFET par des méthodes basées sur le pompage de charge. [Thesis]. Université M'Hamed Bougara Boumerdès; 2013. Available from: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1604

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

11. Fertig, Gregory J. Evaluation of MOSFETs for Terahertz Detector Arrays.

Degree: MS, Chester F. Carlson Center for Imaging Science (COS), 2014, Rochester Institute of Technology

  The terahertz (THz) region of the electromagnetic spectrum is one of the last remaining regions that has yet to be fully characterized. THz imaging… (more)

Subjects/Keywords: Antenna; CMOS; FPA; MOSFET; Terahertz

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APA (6th Edition):

Fertig, G. J. (2014). Evaluation of MOSFETs for Terahertz Detector Arrays. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/8302

Chicago Manual of Style (16th Edition):

Fertig, Gregory J. “Evaluation of MOSFETs for Terahertz Detector Arrays.” 2014. Masters Thesis, Rochester Institute of Technology. Accessed February 22, 2020. https://scholarworks.rit.edu/theses/8302.

MLA Handbook (7th Edition):

Fertig, Gregory J. “Evaluation of MOSFETs for Terahertz Detector Arrays.” 2014. Web. 22 Feb 2020.

Vancouver:

Fertig GJ. Evaluation of MOSFETs for Terahertz Detector Arrays. [Internet] [Masters thesis]. Rochester Institute of Technology; 2014. [cited 2020 Feb 22]. Available from: https://scholarworks.rit.edu/theses/8302.

Council of Science Editors:

Fertig GJ. Evaluation of MOSFETs for Terahertz Detector Arrays. [Masters Thesis]. Rochester Institute of Technology; 2014. Available from: https://scholarworks.rit.edu/theses/8302


NSYSU

12. Chen, Jung-hsiang. The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain.

Degree: Master, Physics, 2009, NSYSU

 Abstract The tendency to manufacture of semiconductor is to minimize the size of device. With the size was minimized, the number of transistor on the… (more)

Subjects/Keywords: POWER-MOSFET; Breakdown Voltage; Reliability

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APA (6th Edition):

Chen, J. (2009). The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Jung-hsiang. “The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain.” 2009. Thesis, NSYSU. Accessed February 22, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Jung-hsiang. “The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain.” 2009. Web. 22 Feb 2020.

Vancouver:

Chen J. The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain. [Internet] [Thesis]. NSYSU; 2009. [cited 2020 Feb 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen J. The Electrical Analysis and Reliability Study of Power MOSFET Given External Mechanical Strain. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0831109-204106

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. Pereira, Lenon Mendes. Caracterização do MOSFET MOskin para dosimetria em tomografia computadorizada .

Degree: 2015, Universidade Federal de Pernambuco

 Este trabalho visa caracterizar o MOSkin para dosimetria em tomografia computadorizada. Desta forma, a resposta do detector foi avaliada para as qualidades de referência RQT… (more)

Subjects/Keywords: MOSkin; MOSFET; Tomografia computadorizada; Dosimetria

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APA (6th Edition):

Pereira, L. M. (2015). Caracterização do MOSFET MOskin para dosimetria em tomografia computadorizada . (Thesis). Universidade Federal de Pernambuco. Retrieved from http://repositorio.ufpe.br/handle/123456789/14936

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pereira, Lenon Mendes. “Caracterização do MOSFET MOskin para dosimetria em tomografia computadorizada .” 2015. Thesis, Universidade Federal de Pernambuco. Accessed February 22, 2020. http://repositorio.ufpe.br/handle/123456789/14936.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pereira, Lenon Mendes. “Caracterização do MOSFET MOskin para dosimetria em tomografia computadorizada .” 2015. Web. 22 Feb 2020.

Vancouver:

Pereira LM. Caracterização do MOSFET MOskin para dosimetria em tomografia computadorizada . [Internet] [Thesis]. Universidade Federal de Pernambuco; 2015. [cited 2020 Feb 22]. Available from: http://repositorio.ufpe.br/handle/123456789/14936.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pereira LM. Caracterização do MOSFET MOskin para dosimetria em tomografia computadorizada . [Thesis]. Universidade Federal de Pernambuco; 2015. Available from: http://repositorio.ufpe.br/handle/123456789/14936

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

14. Follman, Jacob Jay. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs.

Degree: MS, Materials Science and Engineering, 2013, Penn State University

 We utilize electrically detected magnetic resonance (EDMR) to explore the effects of the negative bias temperature instability (NBTI) in 4H-SiC metal oxide semiconductor field effect… (more)

Subjects/Keywords: NBTI; SiC; MOSFET; EPR; EDMR

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APA (6th Edition):

Follman, J. J. (2013). On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs. (Masters Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/17654

Chicago Manual of Style (16th Edition):

Follman, Jacob Jay. “On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs.” 2013. Masters Thesis, Penn State University. Accessed February 22, 2020. https://etda.libraries.psu.edu/catalog/17654.

MLA Handbook (7th Edition):

Follman, Jacob Jay. “On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs.” 2013. Web. 22 Feb 2020.

Vancouver:

Follman JJ. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs. [Internet] [Masters thesis]. Penn State University; 2013. [cited 2020 Feb 22]. Available from: https://etda.libraries.psu.edu/catalog/17654.

Council of Science Editors:

Follman JJ. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs. [Masters Thesis]. Penn State University; 2013. Available from: https://etda.libraries.psu.edu/catalog/17654


King Abdullah University of Science and Technology

15. Alfaraj, Nasir. Reversibly Bistable Flexible Electronics.

Degree: 2015, King Abdullah University of Science and Technology

 Introducing the notion of transformational silicon electronics has paved the way for integrating various applications with silicon-based, modern, high-performance electronic circuits that are mechanically flexible… (more)

Subjects/Keywords: Flexible Electronics; MOSFET; Reversibly Bistable

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APA (6th Edition):

Alfaraj, N. (2015). Reversibly Bistable Flexible Electronics. (Thesis). King Abdullah University of Science and Technology. Retrieved from http://hdl.handle.net/10754/553068

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Alfaraj, Nasir. “Reversibly Bistable Flexible Electronics.” 2015. Thesis, King Abdullah University of Science and Technology. Accessed February 22, 2020. http://hdl.handle.net/10754/553068.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Alfaraj, Nasir. “Reversibly Bistable Flexible Electronics.” 2015. Web. 22 Feb 2020.

Vancouver:

Alfaraj N. Reversibly Bistable Flexible Electronics. [Internet] [Thesis]. King Abdullah University of Science and Technology; 2015. [cited 2020 Feb 22]. Available from: http://hdl.handle.net/10754/553068.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Alfaraj N. Reversibly Bistable Flexible Electronics. [Thesis]. King Abdullah University of Science and Technology; 2015. Available from: http://hdl.handle.net/10754/553068

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

16. Karatsori, Theano. Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations.

Degree: 2017, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

 Τhe motivation for this dissertation is two of the main issues brought up by the scaling of new-era devices in contemporary MOSFET design: the development… (more)

Subjects/Keywords: MOSFET τρανζίστορ; Ηλεκτρικός χαρακτηρισμός; Μοντελοποίηση; MOSFET transistor; Electrical characterization; Modeling

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APA (6th Edition):

Karatsori, T. (2017). Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations. (Thesis). Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Retrieved from http://hdl.handle.net/10442/hedi/42102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Karatsori, Theano. “Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations.” 2017. Thesis, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Accessed February 22, 2020. http://hdl.handle.net/10442/hedi/42102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Karatsori, Theano. “Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations.” 2017. Web. 22 Feb 2020.

Vancouver:

Karatsori T. Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations. [Internet] [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. [cited 2020 Feb 22]. Available from: http://hdl.handle.net/10442/hedi/42102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Karatsori T. Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations. [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. Available from: http://hdl.handle.net/10442/hedi/42102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

17. Παπαθανάσης, Χαράλαμπος. Measurements of periferal dose in five clinical radiotherapy cases with Mosfet detectors in anthropomorphic phantom.

Degree: 2009, University of Patras

In the current study, we present measurements of peripheral dose that is absorbed by specific radio-sensitive organs outside the radiation field for five clinical cases,… (more)

Subjects/Keywords: MOSFET dosimeters; Peripheral dose; 615.842 4; Ανιχνευτές MOSFET; Περιφερειακή δόση

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APA (6th Edition):

Παπαθανάσης, . (2009). Measurements of periferal dose in five clinical radiotherapy cases with Mosfet detectors in anthropomorphic phantom. (Masters Thesis). University of Patras. Retrieved from http://nemertes.lis.upatras.gr/jspui/handle/10889/2545

Chicago Manual of Style (16th Edition):

Παπαθανάσης, Χαράλαμπος. “Measurements of periferal dose in five clinical radiotherapy cases with Mosfet detectors in anthropomorphic phantom.” 2009. Masters Thesis, University of Patras. Accessed February 22, 2020. http://nemertes.lis.upatras.gr/jspui/handle/10889/2545.

MLA Handbook (7th Edition):

Παπαθανάσης, Χαράλαμπος. “Measurements of periferal dose in five clinical radiotherapy cases with Mosfet detectors in anthropomorphic phantom.” 2009. Web. 22 Feb 2020.

Vancouver:

Παπαθανάσης . Measurements of periferal dose in five clinical radiotherapy cases with Mosfet detectors in anthropomorphic phantom. [Internet] [Masters thesis]. University of Patras; 2009. [cited 2020 Feb 22]. Available from: http://nemertes.lis.upatras.gr/jspui/handle/10889/2545.

Council of Science Editors:

Παπαθανάσης . Measurements of periferal dose in five clinical radiotherapy cases with Mosfet detectors in anthropomorphic phantom. [Masters Thesis]. University of Patras; 2009. Available from: http://nemertes.lis.upatras.gr/jspui/handle/10889/2545

18. Karatsori, Theano. Caractérisation et modélisation de UTBB MOSFET sur SOI pour les technologies CMOS avancées et applications en simulations circuits : Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations.

Degree: Docteur es, Nano electronique et nano technologies, 2017, Grenoble Alpes; Université Aristote (Thessalonique, Grèce)

 La motivation de cette thèse est deux des principaux problèmes soulevés par la mise à l'échelle des appareils de la nouvelle ère dans la conception… (more)

Subjects/Keywords: Caractérisation; Mosfet; Modélisation; Fiabilité; Variabilité; Characterization; Mosfet; Modelling; Reliability; Variability; 620

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APA (6th Edition):

Karatsori, T. (2017). Caractérisation et modélisation de UTBB MOSFET sur SOI pour les technologies CMOS avancées et applications en simulations circuits : Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations. (Doctoral Dissertation). Grenoble Alpes; Université Aristote (Thessalonique, Grèce). Retrieved from http://www.theses.fr/2017GREAT035

Chicago Manual of Style (16th Edition):

Karatsori, Theano. “Caractérisation et modélisation de UTBB MOSFET sur SOI pour les technologies CMOS avancées et applications en simulations circuits : Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations.” 2017. Doctoral Dissertation, Grenoble Alpes; Université Aristote (Thessalonique, Grèce). Accessed February 22, 2020. http://www.theses.fr/2017GREAT035.

MLA Handbook (7th Edition):

Karatsori, Theano. “Caractérisation et modélisation de UTBB MOSFET sur SOI pour les technologies CMOS avancées et applications en simulations circuits : Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations.” 2017. Web. 22 Feb 2020.

Vancouver:

Karatsori T. Caractérisation et modélisation de UTBB MOSFET sur SOI pour les technologies CMOS avancées et applications en simulations circuits : Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations. [Internet] [Doctoral dissertation]. Grenoble Alpes; Université Aristote (Thessalonique, Grèce); 2017. [cited 2020 Feb 22]. Available from: http://www.theses.fr/2017GREAT035.

Council of Science Editors:

Karatsori T. Caractérisation et modélisation de UTBB MOSFET sur SOI pour les technologies CMOS avancées et applications en simulations circuits : Electrical characterization and modeling of advanced nano-scale ultra thin body and buried oxide MOSFETs and application in circuit simulations. [Doctoral Dissertation]. Grenoble Alpes; Université Aristote (Thessalonique, Grèce); 2017. Available from: http://www.theses.fr/2017GREAT035


Brno University of Technology

19. Vitek, Vojtech. Budicí obvody výkonového tranzistoru SiC MOSFET .

Degree: 2013, Brno University of Technology

 Bakalárska práca opisuje princípy budenia výkonových tranzistorov MOSFET z materiálu karbid kremíka SiC. Cieľom je podrobne opísať jednotlivé typy budenia a základné zásady pri navrhovaní… (more)

Subjects/Keywords: budič; tranzistor; MOSFET; karbid kremíka; gate driver; transistor; MOSFET; silicon carbide

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APA (6th Edition):

Vitek, V. (2013). Budicí obvody výkonového tranzistoru SiC MOSFET . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/24839

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vitek, Vojtech. “Budicí obvody výkonového tranzistoru SiC MOSFET .” 2013. Thesis, Brno University of Technology. Accessed February 22, 2020. http://hdl.handle.net/11012/24839.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vitek, Vojtech. “Budicí obvody výkonového tranzistoru SiC MOSFET .” 2013. Web. 22 Feb 2020.

Vancouver:

Vitek V. Budicí obvody výkonového tranzistoru SiC MOSFET . [Internet] [Thesis]. Brno University of Technology; 2013. [cited 2020 Feb 22]. Available from: http://hdl.handle.net/11012/24839.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vitek V. Budicí obvody výkonového tranzistoru SiC MOSFET . [Thesis]. Brno University of Technology; 2013. Available from: http://hdl.handle.net/11012/24839

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Guerfi, Youssouf. Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium : Realization and characterization of vertical silicon nanowires MOS transistors.

Degree: Docteur es, Micro et nanosystèmes, 2015, Université Toulouse III – Paul Sabatier

Afin de poursuivre la réduction d'échelle des transistors MOS, l'industrie des semiconducteurs a su anticiper les limitations de la miniaturisation par l'introduction de nouveaux matériaux… (more)

Subjects/Keywords: MOSFET; Nanoélectronique; Nanofabrication; Nanofils; Silicium; MOSFET; Nanoelectronics; Nanofabrication; Nanowires; Silicon

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APA (6th Edition):

Guerfi, Y. (2015). Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium : Realization and characterization of vertical silicon nanowires MOS transistors. (Doctoral Dissertation). Université Toulouse III – Paul Sabatier. Retrieved from http://www.theses.fr/2015TOU30253

Chicago Manual of Style (16th Edition):

Guerfi, Youssouf. “Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium : Realization and characterization of vertical silicon nanowires MOS transistors.” 2015. Doctoral Dissertation, Université Toulouse III – Paul Sabatier. Accessed February 22, 2020. http://www.theses.fr/2015TOU30253.

MLA Handbook (7th Edition):

Guerfi, Youssouf. “Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium : Realization and characterization of vertical silicon nanowires MOS transistors.” 2015. Web. 22 Feb 2020.

Vancouver:

Guerfi Y. Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium : Realization and characterization of vertical silicon nanowires MOS transistors. [Internet] [Doctoral dissertation]. Université Toulouse III – Paul Sabatier; 2015. [cited 2020 Feb 22]. Available from: http://www.theses.fr/2015TOU30253.

Council of Science Editors:

Guerfi Y. Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium : Realization and characterization of vertical silicon nanowires MOS transistors. [Doctoral Dissertation]. Université Toulouse III – Paul Sabatier; 2015. Available from: http://www.theses.fr/2015TOU30253


Universitat Rovira i Virgili

21. Hosenfeld, Fabian. NEGF Based Analytical Modeling of Advanced MOSFETs.

Degree: Departament d'Enginyeria Electrònica, Elèctrica i Automàtica, 2017, Universitat Rovira i Virgili

 Source-to-drain (SD) tunneling decreases the device performance in MOSFETs falling below the 10 nm channel length. Modeling quantum mechanical effects including SD tunneling has gained… (more)

Subjects/Keywords: MOSFET d'ultraescala; modelatge analític; NEGF; MOSFET ultra-escalado; modelado analítico; ultra-scaled MOSFET; analytical modeling; Enginyeria i Arquitectura; 62; 621.3

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APA (6th Edition):

Hosenfeld, F. (2017). NEGF Based Analytical Modeling of Advanced MOSFETs. (Thesis). Universitat Rovira i Virgili. Retrieved from http://hdl.handle.net/10803/462901

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hosenfeld, Fabian. “NEGF Based Analytical Modeling of Advanced MOSFETs.” 2017. Thesis, Universitat Rovira i Virgili. Accessed February 22, 2020. http://hdl.handle.net/10803/462901.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hosenfeld, Fabian. “NEGF Based Analytical Modeling of Advanced MOSFETs.” 2017. Web. 22 Feb 2020.

Vancouver:

Hosenfeld F. NEGF Based Analytical Modeling of Advanced MOSFETs. [Internet] [Thesis]. Universitat Rovira i Virgili; 2017. [cited 2020 Feb 22]. Available from: http://hdl.handle.net/10803/462901.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hosenfeld F. NEGF Based Analytical Modeling of Advanced MOSFETs. [Thesis]. Universitat Rovira i Virgili; 2017. Available from: http://hdl.handle.net/10803/462901

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

22. Michálek, Branislav. Model tranzistoru MOSFET v programu SystemVision .

Degree: 2016, Brno University of Technology

 Táto bakalárska práca sa zaoberá modelovaním tranzistora MOS. Súčasťou teoretickej časti sú rozbor základnej štruktúry a fungovania MOS tranzistora, základy modelovania vo všeobecnosti, popis SPICE… (more)

Subjects/Keywords: MOSFET; modelovanie MOSFETu; extrakcia parametrov; optimalizácia; SPICE; SystemVision; MOSFET; MOSFET modeling; parameter extraction; optimization; SPICE; SystemVision

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APA (6th Edition):

Michálek, B. (2016). Model tranzistoru MOSFET v programu SystemVision . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/60459

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Michálek, Branislav. “Model tranzistoru MOSFET v programu SystemVision .” 2016. Thesis, Brno University of Technology. Accessed February 22, 2020. http://hdl.handle.net/11012/60459.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Michálek, Branislav. “Model tranzistoru MOSFET v programu SystemVision .” 2016. Web. 22 Feb 2020.

Vancouver:

Michálek B. Model tranzistoru MOSFET v programu SystemVision . [Internet] [Thesis]. Brno University of Technology; 2016. [cited 2020 Feb 22]. Available from: http://hdl.handle.net/11012/60459.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Michálek B. Model tranzistoru MOSFET v programu SystemVision . [Thesis]. Brno University of Technology; 2016. Available from: http://hdl.handle.net/11012/60459

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

23. Saijets, Jan. MOSFET RF Characterization Using Bulk and SOI CMOS Technologies.

Degree: 2007, VTT Technical Research Centre of Finland

MOSFET radio-frequency characterization and modeling is studied, both with SOI CMOS and bulk CMOS technologies. The network analyzer measurement uncertainties are studied, as is their… (more)

Subjects/Keywords: RF; CMOS; modeling; MOSFET; measurement uncertainty

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APA (6th Edition):

Saijets, J. (2007). MOSFET RF Characterization Using Bulk and SOI CMOS Technologies. (Thesis). VTT Technical Research Centre of Finland. Retrieved from http://lib.tkk.fi/Diss/2007/isbn9789513870256/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Saijets, Jan. “MOSFET RF Characterization Using Bulk and SOI CMOS Technologies.” 2007. Thesis, VTT Technical Research Centre of Finland. Accessed February 22, 2020. http://lib.tkk.fi/Diss/2007/isbn9789513870256/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Saijets, Jan. “MOSFET RF Characterization Using Bulk and SOI CMOS Technologies.” 2007. Web. 22 Feb 2020.

Vancouver:

Saijets J. MOSFET RF Characterization Using Bulk and SOI CMOS Technologies. [Internet] [Thesis]. VTT Technical Research Centre of Finland; 2007. [cited 2020 Feb 22]. Available from: http://lib.tkk.fi/Diss/2007/isbn9789513870256/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Saijets J. MOSFET RF Characterization Using Bulk and SOI CMOS Technologies. [Thesis]. VTT Technical Research Centre of Finland; 2007. Available from: http://lib.tkk.fi/Diss/2007/isbn9789513870256/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

24. Srivastava, Viranjay Mohan. Analysis and design of double-pole four-throw RF switch by using novel MOSFET Technologies.

Degree: Electronics and Communication, 2013, Jaypee University of Information Technology, Solan

Recently, The Growing Demand Of Low-Power And Low-Cost Wireless Transceivers, Various Integrated Circuit (Ic) Technologies Are Competing To Integrate More Radio Frequency (Rf) Functions Onto… (more)

Subjects/Keywords: Double-Gate MOSFET; Radio Frequency; RF Switch

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APA (6th Edition):

Srivastava, V. M. (2013). Analysis and design of double-pole four-throw RF switch by using novel MOSFET Technologies. (Thesis). Jaypee University of Information Technology, Solan. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/11080

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Srivastava, Viranjay Mohan. “Analysis and design of double-pole four-throw RF switch by using novel MOSFET Technologies.” 2013. Thesis, Jaypee University of Information Technology, Solan. Accessed February 22, 2020. http://shodhganga.inflibnet.ac.in/handle/10603/11080.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Srivastava, Viranjay Mohan. “Analysis and design of double-pole four-throw RF switch by using novel MOSFET Technologies.” 2013. Web. 22 Feb 2020.

Vancouver:

Srivastava VM. Analysis and design of double-pole four-throw RF switch by using novel MOSFET Technologies. [Internet] [Thesis]. Jaypee University of Information Technology, Solan; 2013. [cited 2020 Feb 22]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/11080.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Srivastava VM. Analysis and design of double-pole four-throw RF switch by using novel MOSFET Technologies. [Thesis]. Jaypee University of Information Technology, Solan; 2013. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/11080

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

25. Nassar, Christopher. Compact modeling of thin-film silicon transistors fabricated on glass.

Degree: PhD, Microsystems Engineering, 2011, Rochester Institute of Technology

 The semiconductor industry, now entering its seventh decade, continues to innovate and evolve at a breakneck pace. E. O. Wilson, the famous Harvard biologist who… (more)

Subjects/Keywords: MOSFET; Silicon-on-glass; SiOG; Transistor

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APA (6th Edition):

Nassar, C. (2011). Compact modeling of thin-film silicon transistors fabricated on glass. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/16

Chicago Manual of Style (16th Edition):

Nassar, Christopher. “Compact modeling of thin-film silicon transistors fabricated on glass.” 2011. Doctoral Dissertation, Rochester Institute of Technology. Accessed February 22, 2020. https://scholarworks.rit.edu/theses/16.

MLA Handbook (7th Edition):

Nassar, Christopher. “Compact modeling of thin-film silicon transistors fabricated on glass.” 2011. Web. 22 Feb 2020.

Vancouver:

Nassar C. Compact modeling of thin-film silicon transistors fabricated on glass. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2011. [cited 2020 Feb 22]. Available from: https://scholarworks.rit.edu/theses/16.

Council of Science Editors:

Nassar C. Compact modeling of thin-film silicon transistors fabricated on glass. [Doctoral Dissertation]. Rochester Institute of Technology; 2011. Available from: https://scholarworks.rit.edu/theses/16


Rochester Institute of Technology

26. Urban, Christopher. Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies.

Degree: PhD, Microsystems Engineering, 2011, Rochester Institute of Technology

 The International Technology Roadmap for Semiconductors predicts that the nominal power supply voltage, VDD, will fall to 0.7 V by the end of the bulk… (more)

Subjects/Keywords: Analog; Body-driven; Bulk-driven; CMOS; MOSFET

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APA (6th Edition):

Urban, C. (2011). Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/15

Chicago Manual of Style (16th Edition):

Urban, Christopher. “Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies.” 2011. Doctoral Dissertation, Rochester Institute of Technology. Accessed February 22, 2020. https://scholarworks.rit.edu/theses/15.

MLA Handbook (7th Edition):

Urban, Christopher. “Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies.” 2011. Web. 22 Feb 2020.

Vancouver:

Urban C. Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2011. [cited 2020 Feb 22]. Available from: https://scholarworks.rit.edu/theses/15.

Council of Science Editors:

Urban C. Scaling the bulk-driven MOSFET into deca-nanometer bulk CMOS technologies. [Doctoral Dissertation]. Rochester Institute of Technology; 2011. Available from: https://scholarworks.rit.edu/theses/15


North Carolina State University

27. Zeng, Chang. GaN MOSFETs for Low Power Giga Scale LSI Logic.

Degree: PhD, Electrical Engineering, 2007, North Carolina State University

 Advances in material quality and device processing have led to promising results for III-nitride electronic devices for high frequency applications. Numerous groups have report that… (more)

Subjects/Keywords: MESFET; GaN; MOSFET

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zeng, C. (2007). GaN MOSFETs for Low Power Giga Scale LSI Logic. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3621

Chicago Manual of Style (16th Edition):

Zeng, Chang. “GaN MOSFETs for Low Power Giga Scale LSI Logic.” 2007. Doctoral Dissertation, North Carolina State University. Accessed February 22, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3621.

MLA Handbook (7th Edition):

Zeng, Chang. “GaN MOSFETs for Low Power Giga Scale LSI Logic.” 2007. Web. 22 Feb 2020.

Vancouver:

Zeng C. GaN MOSFETs for Low Power Giga Scale LSI Logic. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2020 Feb 22]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3621.

Council of Science Editors:

Zeng C. GaN MOSFETs for Low Power Giga Scale LSI Logic. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3621


University of Notre Dame

28. Xiu Xing. Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications</h1>.

Degree: PhD, Electrical Engineering, 2013, University of Notre Dame

  In this work, wet thermal oxidation of epitaxially-grown InAlP in combination with a pseudomorphic high electron mobility In0.22Ga0.78As channel has been explored, as an… (more)

Subjects/Keywords: GaAs; MOSFET; Pseudomorphic; InAlP oxide; RF

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APA (6th Edition):

Xing, X. (2013). Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/r494vh5694z

Chicago Manual of Style (16th Edition):

Xing, Xiu. “Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications</h1>.” 2013. Doctoral Dissertation, University of Notre Dame. Accessed February 22, 2020. https://curate.nd.edu/show/r494vh5694z.

MLA Handbook (7th Edition):

Xing, Xiu. “Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications</h1>.” 2013. Web. 22 Feb 2020.

Vancouver:

Xing X. Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2013. [cited 2020 Feb 22]. Available from: https://curate.nd.edu/show/r494vh5694z.

Council of Science Editors:

Xing X. Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications</h1>. [Doctoral Dissertation]. University of Notre Dame; 2013. Available from: https://curate.nd.edu/show/r494vh5694z


NSYSU

29. Lee, Jung-Chan. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.

Degree: Master, Electrical Engineering, 2013, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP Schottky tunneling barrier… (more)

Subjects/Keywords: InP; ALD; Schottky tunneling barrier MOSFET; TiO2

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lee, J. (2013). Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Jung-Chan. “Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.” 2013. Thesis, NSYSU. Accessed February 22, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Jung-Chan. “Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.” 2013. Web. 22 Feb 2020.

Vancouver:

Lee J. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. [Internet] [Thesis]. NSYSU; 2013. [cited 2020 Feb 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee J. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

30. Tang, Tzu-hsien. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.

Degree: Master, Electrical Engineering, 2014, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP asytmmetrical Schottky barrier… (more)

Subjects/Keywords: InP; TiO2; asymmetrical Schottky barrier MOSFET; ALD

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tang, T. (2014). Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Thesis, NSYSU. Accessed February 22, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Web. 22 Feb 2020.

Vancouver:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Feb 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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