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You searched for subject:(MOS Device). Showing records 1 – 13 of 13 total matches.

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University of Notre Dame

1. Wangqing Yuan. Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications</h1>.

Degree: MSin Electrical Engineering, Electrical Engineering, 2009, University of Notre Dame

  The ability of Variable Angle Spectroscopic Ellipsometry (VASE) to determine the thickness of the thin In0.49Al0.51P (InAlP) native gate oxide (“InAlP-ox”) for GaAs-based MOSFET… (more)

Subjects/Keywords: InAlP native oxide; MOS Device; Optical constants; Ellipsometry; Thin films; Thickness measurement; InAlP; Oxidation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yuan, W. (2009). Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/5x21td98j21

Chicago Manual of Style (16th Edition):

Yuan, Wangqing. “Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications</h1>.” 2009. Masters Thesis, University of Notre Dame. Accessed December 19, 2018. https://curate.nd.edu/show/5x21td98j21.

MLA Handbook (7th Edition):

Yuan, Wangqing. “Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications</h1>.” 2009. Web. 19 Dec 2018.

Vancouver:

Yuan W. Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2009. [cited 2018 Dec 19]. Available from: https://curate.nd.edu/show/5x21td98j21.

Council of Science Editors:

Yuan W. Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications</h1>. [Masters Thesis]. University of Notre Dame; 2009. Available from: https://curate.nd.edu/show/5x21td98j21

2. Rahman, Md. Shahinur. Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates.

Degree: 2009, University of Ioannina; Πανεπιστήμιο Ιωαννίνων

 Germanium as a replacement for Silicon in metal-oxide-semiconductor (MOS) devices, offers a higher electron (2x) and hole (4x) mobility than silicon. A Ge channel MOS(more)

Subjects/Keywords: MOS αξιοπιστία διατάξεων; Ηλεκτρική καταπόνηση; Διατάξεις MOS; Οξείδια σπανίων γαιών; Οξείδιο δημητρίου; Οξείδιο αφνίου; Οξείδιο δυσπροσίου; Ηλεκτρικός χαρακτηρισμός; MOS device reliability; Electrical stress; MOS devices; Rare earth oxides; Cerium oxide (CeO2); Hafnium oxide; Dysprosium oxide; Electrical characterization

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APA (6th Edition):

Rahman, M. S. (2009). Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates. (Thesis). University of Ioannina; Πανεπιστήμιο Ιωαννίνων. Retrieved from http://hdl.handle.net/10442/hedi/18141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rahman, Md Shahinur. “Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates.” 2009. Thesis, University of Ioannina; Πανεπιστήμιο Ιωαννίνων. Accessed December 19, 2018. http://hdl.handle.net/10442/hedi/18141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rahman, Md Shahinur. “Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates.” 2009. Web. 19 Dec 2018.

Vancouver:

Rahman MS. Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates. [Internet] [Thesis]. University of Ioannina; Πανεπιστήμιο Ιωαννίνων; 2009. [cited 2018 Dec 19]. Available from: http://hdl.handle.net/10442/hedi/18141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rahman MS. Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates. [Thesis]. University of Ioannina; Πανεπιστήμιο Ιωαννίνων; 2009. Available from: http://hdl.handle.net/10442/hedi/18141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. Wirth, Gilson Inácio. Mesoscopic phenomena in nanometer scale MOS devices.

Degree: 1999, Universität Dortmund

 The key point in the success of the semiconductor industry is its ability to continuously provide electronic products with decreasing cost per function as well… (more)

Subjects/Keywords: Bulk-MOS-system; Coulomb blockade; Mesoscopic phenomena; MOS-device; Nanotechnology; Quantum transport model; Random telegraph signal; RTS; Temperature effect; 620

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APA (6th Edition):

Wirth, G. I. (1999). Mesoscopic phenomena in nanometer scale MOS devices. (Thesis). Universität Dortmund. Retrieved from http://hdl.handle.net/2003/20365

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wirth, Gilson Inácio. “Mesoscopic phenomena in nanometer scale MOS devices.” 1999. Thesis, Universität Dortmund. Accessed December 19, 2018. http://hdl.handle.net/2003/20365.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wirth, Gilson Inácio. “Mesoscopic phenomena in nanometer scale MOS devices.” 1999. Web. 19 Dec 2018.

Vancouver:

Wirth GI. Mesoscopic phenomena in nanometer scale MOS devices. [Internet] [Thesis]. Universität Dortmund; 1999. [cited 2018 Dec 19]. Available from: http://hdl.handle.net/2003/20365.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wirth GI. Mesoscopic phenomena in nanometer scale MOS devices. [Thesis]. Universität Dortmund; 1999. Available from: http://hdl.handle.net/2003/20365

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Kyoto University / 京都大学

4. Noborio, Masato. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究.

Degree: 博士(工学), 2009, Kyoto University / 京都大学

新制・課程博士

甲第14628号

工博第3096号

Subjects/Keywords: SiC; MIS; MOS; MISFET; MOSFET; power IC; power electronics; power device

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Noborio, M. (2009). Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究. (Thesis). Kyoto University / 京都大学. Retrieved from http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Noborio, Masato. “Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究.” 2009. Thesis, Kyoto University / 京都大学. Accessed December 19, 2018. http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Noborio, Masato. “Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究.” 2009. Web. 19 Dec 2018.

Vancouver:

Noborio M. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究. [Internet] [Thesis]. Kyoto University / 京都大学; 2009. [cited 2018 Dec 19]. Available from: http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Noborio M. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究. [Thesis]. Kyoto University / 京都大学; 2009. Available from: http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

5. TEO WEI YEE, JOCELYN. Plasma charging damage in deep sub-micron CMOS devices.

Degree: 2003, National University of Singapore

Subjects/Keywords: MOS device; plasma charging damage; gate oxide; antenna; high density plasma; interconnect layer

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APA (6th Edition):

TEO WEI YEE, J. (2003). Plasma charging damage in deep sub-micron CMOS devices. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/13472 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/9/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/19/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/20/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/21/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/22/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/23/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/24/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/25/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/26/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/27/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/28/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/29/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/30/bitstream

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

TEO WEI YEE, JOCELYN. “Plasma charging damage in deep sub-micron CMOS devices.” 2003. Thesis, National University of Singapore. Accessed December 19, 2018. http://scholarbank.nus.edu.sg/handle/10635/13472 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/9/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/19/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/20/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/21/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/22/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/23/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/24/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/25/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/26/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/27/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/28/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/29/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/30/bitstream.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

TEO WEI YEE, JOCELYN. “Plasma charging damage in deep sub-micron CMOS devices.” 2003. Web. 19 Dec 2018.

Vancouver:

TEO WEI YEE J. Plasma charging damage in deep sub-micron CMOS devices. [Internet] [Thesis]. National University of Singapore; 2003. [cited 2018 Dec 19]. Available from: http://scholarbank.nus.edu.sg/handle/10635/13472 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/9/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/19/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/20/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/21/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/22/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/23/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/24/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/25/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/26/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/27/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/28/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/29/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/30/bitstream.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

TEO WEI YEE J. Plasma charging damage in deep sub-micron CMOS devices. [Thesis]. National University of Singapore; 2003. Available from: http://scholarbank.nus.edu.sg/handle/10635/13472 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/9/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/19/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/20/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/21/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/22/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/23/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/24/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/25/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/26/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/27/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/28/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/29/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/30/bitstream

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Kyoto University

6. Noborio, Masato. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits .

Degree: 2009, Kyoto University

Subjects/Keywords: SiC; MIS; MOS; MISFET; MOSFET; power IC; power electronics; power device

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Noborio, M. (2009). Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits . (Thesis). Kyoto University. Retrieved from http://hdl.handle.net/2433/78006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Noborio, Masato. “Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits .” 2009. Thesis, Kyoto University. Accessed December 19, 2018. http://hdl.handle.net/2433/78006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Noborio, Masato. “Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits .” 2009. Web. 19 Dec 2018.

Vancouver:

Noborio M. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits . [Internet] [Thesis]. Kyoto University; 2009. [cited 2018 Dec 19]. Available from: http://hdl.handle.net/2433/78006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Noborio M. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits . [Thesis]. Kyoto University; 2009. Available from: http://hdl.handle.net/2433/78006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

7. Ajayan, K R. Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology.

Degree: 2014, Indian Institute of Science

 Process variability is a major challenge for the design of nano scale MOSFETs due to fundamental physical limits as well as process control limitations. As… (more)

Subjects/Keywords: Metal Oxide Semiconductors (MOS); Digital Integrated Circuits; Complementary Metal Oxide Semiconductors (CMOS); N-type Metal-Oxide Semiconductors (NMOS); P-type Metal-Oxide Semiconductors (PMOS); Metal Oxode Semiconductor Device Modeling; Look Up Table Model (LUT); Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET); MOSFET Models; BSIM Models; Variability Aware Device Modeling; Integrated Circuit Modeling; Circuit Design; 45nm Analog CMOS Technology; Electrical Communication Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ajayan, K. R. (2014). Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ajayan, K R. “Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology.” 2014. Thesis, Indian Institute of Science. Accessed December 19, 2018. http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ajayan, K R. “Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology.” 2014. Web. 19 Dec 2018.

Vancouver:

Ajayan KR. Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology. [Internet] [Thesis]. Indian Institute of Science; 2014. [cited 2018 Dec 19]. Available from: http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ajayan KR. Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology. [Thesis]. Indian Institute of Science; 2014. Available from: http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. Elhami Khorasani, Arash. Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers.

Degree: MS, Materials Science and Engineering, 2013, Arizona State University

 Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no… (more)

Subjects/Keywords: Materials Science; Electrical engineering; Carrier Lifetime; Epitaxial Layers; MOS Capacitors; Semiconductor Defects; Semiconductor Device Measurement; Silicon

…channel MOS device showing the ‎ occupancy of interface traps and the various charge polarities… …heavily inverted MOS-C device. Below is the charge ‎ distribution diagram which shows the gate… …32 1.16 Seven generation mechanisms that drive the deep depleted MOS-C device back to… …35 1.18 C-t curve for a pulsed MOS-C device from accumulation to deep-depletion… …Figure ‎1.3: Band diagrams of the Si substrate of a p-channel MOS device showing the occupancy… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Elhami Khorasani, A. (2013). Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/17771

Chicago Manual of Style (16th Edition):

Elhami Khorasani, Arash. “Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers.” 2013. Masters Thesis, Arizona State University. Accessed December 19, 2018. http://repository.asu.edu/items/17771.

MLA Handbook (7th Edition):

Elhami Khorasani, Arash. “Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers.” 2013. Web. 19 Dec 2018.

Vancouver:

Elhami Khorasani A. Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers. [Internet] [Masters thesis]. Arizona State University; 2013. [cited 2018 Dec 19]. Available from: http://repository.asu.edu/items/17771.

Council of Science Editors:

Elhami Khorasani A. Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers. [Masters Thesis]. Arizona State University; 2013. Available from: http://repository.asu.edu/items/17771

9. LIU CHANG. AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides.

Degree: 2008, National University of Singapore

Subjects/Keywords: AlGaN/GaN HEMTs; MOS-HEMTs; high-k dielectric; epitaxial growth; pulsed-laser-deposition; device characterizations

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

CHANG, L. (2008). AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/13138 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/9/bitstream

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

CHANG, LIU. “AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides.” 2008. Thesis, National University of Singapore. Accessed December 19, 2018. http://scholarbank.nus.edu.sg/handle/10635/13138 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/9/bitstream.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

CHANG, LIU. “AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides.” 2008. Web. 19 Dec 2018.

Vancouver:

CHANG L. AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides. [Internet] [Thesis]. National University of Singapore; 2008. [cited 2018 Dec 19]. Available from: http://scholarbank.nus.edu.sg/handle/10635/13138 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/9/bitstream.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

CHANG L. AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides. [Thesis]. National University of Singapore; 2008. Available from: http://scholarbank.nus.edu.sg/handle/10635/13138 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/9/bitstream

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Central Florida

10. Liu, Yi. Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability.

Degree: 2005, University of Central Florida

 As CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled… (more)

Subjects/Keywords: Oxide Breakdown; Hot Carrier; NBTI; MOS; Device and Circuit; Reliability; Electrical and Computer Engineering; Electrical and Electronics; Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Liu, Y. (2005). Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability. (Doctoral Dissertation). University of Central Florida. Retrieved from http://stars.library.ucf.edu/etd/349

Chicago Manual of Style (16th Edition):

Liu, Yi. “Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability.” 2005. Doctoral Dissertation, University of Central Florida. Accessed December 19, 2018. http://stars.library.ucf.edu/etd/349.

MLA Handbook (7th Edition):

Liu, Yi. “Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability.” 2005. Web. 19 Dec 2018.

Vancouver:

Liu Y. Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability. [Internet] [Doctoral dissertation]. University of Central Florida; 2005. [cited 2018 Dec 19]. Available from: http://stars.library.ucf.edu/etd/349.

Council of Science Editors:

Liu Y. Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability. [Doctoral Dissertation]. University of Central Florida; 2005. Available from: http://stars.library.ucf.edu/etd/349

11. Burham, Cynthia Faye. Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications.

Degree: Electrical and Computer Engineering, 2009, University of Texas – Austin

 Aggressive scaling required to augment device performance has caused conventional electrode materials to approach their physical scaling limits. Alternative metal gate/high dielectric constant (MG/High-[kappa]) stacks… (more)

Subjects/Keywords: MG/High-[kappa] technology; Device fabrication; Cost reduction; Fin field effect transistors; 3 dimensional ultra thin body silicon on oxide; n-MOS; p-MOS

…scaled device analysis. Specially designed MOS capacitors (MOSCAPs) must be… …for Conventional MOSFET Technology..........1 1.1.1 Conventional Device Structures… …4 1.1.4 Detrimental Effects on Device Performance of Gate Oxide Scaling in Conventional… …54 CHAPTER 4 n-MOS TO p-MOS THICKNESS TUNABLE METAL GATE/HIGH-κ ELECTRODE FinFETS UTILIZING… …36 xi List of Figures Figure 1.1: Developments in conventional and alternative device… 

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APA (6th Edition):

Burham, C. F. (2009). Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/11663

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Burham, Cynthia Faye. “Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications.” 2009. Thesis, University of Texas – Austin. Accessed December 19, 2018. http://hdl.handle.net/2152/11663.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Burham, Cynthia Faye. “Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications.” 2009. Web. 19 Dec 2018.

Vancouver:

Burham CF. Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications. [Internet] [Thesis]. University of Texas – Austin; 2009. [cited 2018 Dec 19]. Available from: http://hdl.handle.net/2152/11663.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Burham CF. Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications. [Thesis]. University of Texas – Austin; 2009. Available from: http://hdl.handle.net/2152/11663

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

12. Gorti, Tejaswi. Silicon-based pH sensor for biological and environmental applications.

Degree: MS, 1200, 2012, University of Illinois – Urbana-Champaign

 In biological and environmental applications, it is desirable to be able to measure hydrogen and hydroxyl ion concentrations (pH levels). Conventionally, the measurement processes take… (more)

Subjects/Keywords: Silicon; semiconductor; fabrication; solid state; device physics; biosensors; nanotechnology; microfluidics; pH; carrier transport; Metal-Oxide-Silicon (MOS) capacitor

…easily derive an electrical model for the IOSC device. It is safe to assume that our MOS-C-like… …diagram. The MOS-C is a two terminal device, essentially working like a variable capacitor… …operation for the MOS-C device. The band diagram of each of these modes is shown in Fig. A.2. The… …signal voltage, in which case, the CV curve of the MOS-C device becomes dependent upon the… …capacitance, yielding Equation A.4 for total capacitance. The overall CV curves for the MOS-C device… 

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APA (6th Edition):

Gorti, T. (2012). Silicon-based pH sensor for biological and environmental applications. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/34249

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gorti, Tejaswi. “Silicon-based pH sensor for biological and environmental applications.” 2012. Thesis, University of Illinois – Urbana-Champaign. Accessed December 19, 2018. http://hdl.handle.net/2142/34249.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gorti, Tejaswi. “Silicon-based pH sensor for biological and environmental applications.” 2012. Web. 19 Dec 2018.

Vancouver:

Gorti T. Silicon-based pH sensor for biological and environmental applications. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2012. [cited 2018 Dec 19]. Available from: http://hdl.handle.net/2142/34249.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gorti T. Silicon-based pH sensor for biological and environmental applications. [Thesis]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/34249

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Central Florida

13. Shea, Patrick. Design And Modeling Of Radiation Hardened Ldmosfet For Space Craft Power Systems.

Degree: 2007, University of Central Florida

 NASA missions require innovative power electronics system and component solutions with long life capability, high radiation tolerance, low mass and volume, and high reliability in… (more)

Subjects/Keywords: Heavy ions; MOS Devices; MOSFETs; Power FETs; Power Semiconductor Devices; radiation hardening; radiation effects; Semiconductor devices; Semiconductor device modeling; Semiconductor device radiation effects; Electrical and Computer Engineering; Electrical and Electronics; Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Shea, P. (2007). Design And Modeling Of Radiation Hardened Ldmosfet For Space Craft Power Systems. (Masters Thesis). University of Central Florida. Retrieved from http://stars.library.ucf.edu/etd/3344

Chicago Manual of Style (16th Edition):

Shea, Patrick. “Design And Modeling Of Radiation Hardened Ldmosfet For Space Craft Power Systems.” 2007. Masters Thesis, University of Central Florida. Accessed December 19, 2018. http://stars.library.ucf.edu/etd/3344.

MLA Handbook (7th Edition):

Shea, Patrick. “Design And Modeling Of Radiation Hardened Ldmosfet For Space Craft Power Systems.” 2007. Web. 19 Dec 2018.

Vancouver:

Shea P. Design And Modeling Of Radiation Hardened Ldmosfet For Space Craft Power Systems. [Internet] [Masters thesis]. University of Central Florida; 2007. [cited 2018 Dec 19]. Available from: http://stars.library.ucf.edu/etd/3344.

Council of Science Editors:

Shea P. Design And Modeling Of Radiation Hardened Ldmosfet For Space Craft Power Systems. [Masters Thesis]. University of Central Florida; 2007. Available from: http://stars.library.ucf.edu/etd/3344

.