Advanced search options

Sorted by: relevance · author · university · date | New search

You searched for `subject:(MOS Device)`

.
Showing records 1 – 13 of
13 total matches.

▼ Search Limiters

University of Notre Dame

1. Wangqing Yuan. Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications</h1>.

Degree: MSin Electrical Engineering, Electrical Engineering, 2009, University of Notre Dame

URL: https://curate.nd.edu/show/5x21td98j21

► The ability of Variable Angle Spectroscopic Ellipsometry (VASE) to determine the thickness of the thin In0.49Al0.51P (InAlP) native gate oxide (“InAlP-ox”) for GaAs-based MOSFET…
(more)

Subjects/Keywords: InAlP native oxide; MOS Device; Optical constants; Ellipsometry; Thin films; Thickness measurement; InAlP; Oxidation

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

Yuan, W. (2009). Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/5x21td98j21

Chicago Manual of Style (16^{th} Edition):

Yuan, Wangqing. “Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications</h1>.” 2009. Masters Thesis, University of Notre Dame. Accessed December 19, 2018. https://curate.nd.edu/show/5x21td98j21.

MLA Handbook (7^{th} Edition):

Yuan, Wangqing. “Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications</h1>.” 2009. Web. 19 Dec 2018.

Vancouver:

Yuan W. Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2009. [cited 2018 Dec 19]. Available from: https://curate.nd.edu/show/5x21td98j21.

Council of Science Editors:

Yuan W. Variable-Angle Spectroscopic Ellipsometry of InAlP Native Oxide Gate Dielectric Layers for GaAs MOSFET Applications</h1>. [Masters Thesis]. University of Notre Dame; 2009. Available from: https://curate.nd.edu/show/5x21td98j21

2. Rahman, Md. Shahinur. Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates.

Degree: 2009, University of Ioannina; Πανεπιστήμιο Ιωαννίνων

URL: http://hdl.handle.net/10442/hedi/18141

► Germanium as a replacement for Silicon in metal-oxide-semiconductor (*MOS*) devices, offers a higher electron (2x) and hole (4x) mobility than silicon. A Ge channel *MOS*…
(more)

Subjects/Keywords: MOS αξιοπιστία διατάξεων; Ηλεκτρική καταπόνηση; Διατάξεις MOS; Οξείδια σπανίων γαιών; Οξείδιο δημητρίου; Οξείδιο αφνίου; Οξείδιο δυσπροσίου; Ηλεκτρικός χαρακτηρισμός; MOS device reliability; Electrical stress; MOS devices; Rare earth oxides; Cerium oxide (CeO2); Hafnium oxide; Dysprosium oxide; Electrical characterization

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

Rahman, M. S. (2009). Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates. (Thesis). University of Ioannina; Πανεπιστήμιο Ιωαννίνων. Retrieved from http://hdl.handle.net/10442/hedi/18141

Note: this citation may be lacking information needed for this citation format:

Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^{th} Edition):

Rahman, Md Shahinur. “Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates.” 2009. Thesis, University of Ioannina; Πανεπιστήμιο Ιωαννίνων. Accessed December 19, 2018. http://hdl.handle.net/10442/hedi/18141.

Note: this citation may be lacking information needed for this citation format:

Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^{th} Edition):

Rahman, Md Shahinur. “Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates.” 2009. Web. 19 Dec 2018.

Vancouver:

Rahman MS. Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates. [Internet] [Thesis]. University of Ioannina; Πανεπιστήμιο Ιωαννίνων; 2009. [cited 2018 Dec 19]. Available from: http://hdl.handle.net/10442/hedi/18141.

Note: this citation may be lacking information needed for this citation format:

Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rahman MS. Reliability issues and electrical characteristics of rare-earth oxides and their gate stacks grown on germanium substrates. [Thesis]. University of Ioannina; Πανεπιστήμιο Ιωαννίνων; 2009. Available from: http://hdl.handle.net/10442/hedi/18141

Not specified: Masters Thesis or Doctoral Dissertation

3.
Wirth, Gilson Inácio.
Mesoscopic phenomena in nanometer
scale *MOS* devices.

Degree: 1999, Universität Dortmund

URL: http://hdl.handle.net/2003/20365

► The key point in the success of the semiconductor industry is its ability to continuously provide electronic products with decreasing cost per function as well…
(more)

Subjects/Keywords: Bulk-MOS-system; Coulomb blockade; Mesoscopic phenomena; MOS-device; Nanotechnology; Quantum transport model; Random telegraph signal; RTS; Temperature effect; 620

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

Wirth, G. I. (1999). Mesoscopic phenomena in nanometer scale MOS devices. (Thesis). Universität Dortmund. Retrieved from http://hdl.handle.net/2003/20365

Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^{th} Edition):

Wirth, Gilson Inácio. “Mesoscopic phenomena in nanometer scale MOS devices.” 1999. Thesis, Universität Dortmund. Accessed December 19, 2018. http://hdl.handle.net/2003/20365.

Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^{th} Edition):

Wirth, Gilson Inácio. “Mesoscopic phenomena in nanometer scale MOS devices.” 1999. Web. 19 Dec 2018.

Vancouver:

Wirth GI. Mesoscopic phenomena in nanometer scale MOS devices. [Internet] [Thesis]. Universität Dortmund; 1999. [cited 2018 Dec 19]. Available from: http://hdl.handle.net/2003/20365.

Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wirth GI. Mesoscopic phenomena in nanometer scale MOS devices. [Thesis]. Universität Dortmund; 1999. Available from: http://hdl.handle.net/2003/20365

Not specified: Masters Thesis or Doctoral Dissertation

Kyoto University / 京都大学

4. Noborio, Masato. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究.

Degree: 博士(工学), 2009, Kyoto University / 京都大学

URL: http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628

新制・課程博士

甲第14628号

工博第3096号

Subjects/Keywords: SiC; MIS; MOS; MISFET; MOSFET; power IC; power electronics; power device

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

Noborio, M. (2009). Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究. (Thesis). Kyoto University / 京都大学. Retrieved from http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628

Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^{th} Edition):

Noborio, Masato. “Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究.” 2009. Thesis, Kyoto University / 京都大学. Accessed December 19, 2018. http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628.

Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^{th} Edition):

Noborio, Masato. “Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究.” 2009. Web. 19 Dec 2018.

Vancouver:

Noborio M. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究. [Internet] [Thesis]. Kyoto University / 京都大学; 2009. [cited 2018 Dec 19]. Available from: http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628.

Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Noborio M. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits : 高耐圧パワー集積回路を目指したSiC金属-絶縁膜-半導体素子の基礎研究. [Thesis]. Kyoto University / 京都大学; 2009. Available from: http://hdl.handle.net/2433/78006 ; http://dx.doi.org/10.14989/doctor.k14628

Not specified: Masters Thesis or Doctoral Dissertation

5. TEO WEI YEE, JOCELYN. Plasma charging damage in deep sub-micron CMOS devices.

Degree: 2003, National University of Singapore

URL: http://scholarbank.nus.edu.sg/handle/10635/13472 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/9/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/19/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/20/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/21/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/22/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/23/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/24/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/25/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/26/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/27/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/28/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/29/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/30/bitstream

Subjects/Keywords: MOS device; plasma charging damage; gate oxide; antenna; high density plasma; interconnect layer

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

TEO WEI YEE, J. (2003). Plasma charging damage in deep sub-micron CMOS devices. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/13472 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/9/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/19/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/20/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/21/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/22/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/23/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/24/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/25/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/26/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/27/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/28/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/29/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/30/bitstream

Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^{th} Edition):

TEO WEI YEE, JOCELYN. “Plasma charging damage in deep sub-micron CMOS devices.” 2003. Thesis, National University of Singapore. Accessed December 19, 2018. http://scholarbank.nus.edu.sg/handle/10635/13472 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/9/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/19/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/20/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/21/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/22/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/23/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/24/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/25/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/26/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/27/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/28/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/29/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/30/bitstream.

Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^{th} Edition):

TEO WEI YEE, JOCELYN. “Plasma charging damage in deep sub-micron CMOS devices.” 2003. Web. 19 Dec 2018.

Vancouver:

TEO WEI YEE J. Plasma charging damage in deep sub-micron CMOS devices. [Internet] [Thesis]. National University of Singapore; 2003. [cited 2018 Dec 19]. Available from: http://scholarbank.nus.edu.sg/handle/10635/13472 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/9/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/19/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/20/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/21/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/22/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/23/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/24/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/25/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/26/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/27/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/28/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/29/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/30/bitstream.

Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

TEO WEI YEE J. Plasma charging damage in deep sub-micron CMOS devices. [Thesis]. National University of Singapore; 2003. Available from: http://scholarbank.nus.edu.sg/handle/10635/13472 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/9/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/19/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/20/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/21/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/22/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/23/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/24/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/25/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/26/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/27/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/28/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/29/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13472/30/bitstream

Not specified: Masters Thesis or Doctoral Dissertation

Kyoto University

6. Noborio, Masato. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits .

Degree: 2009, Kyoto University

URL: http://hdl.handle.net/2433/78006

Subjects/Keywords: SiC; MIS; MOS; MISFET; MOSFET; power IC; power electronics; power device

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

Noborio, M. (2009). Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits . (Thesis). Kyoto University. Retrieved from http://hdl.handle.net/2433/78006

Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^{th} Edition):

Noborio, Masato. “Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits .” 2009. Thesis, Kyoto University. Accessed December 19, 2018. http://hdl.handle.net/2433/78006.

Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^{th} Edition):

Noborio, Masato. “Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits .” 2009. Web. 19 Dec 2018.

Vancouver:

Noborio M. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits . [Internet] [Thesis]. Kyoto University; 2009. [cited 2018 Dec 19]. Available from: http://hdl.handle.net/2433/78006.

Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Noborio M. Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits . [Thesis]. Kyoto University; 2009. Available from: http://hdl.handle.net/2433/78006

Not specified: Masters Thesis or Doctoral Dissertation

Indian Institute of Science

7.
Ajayan, K R.
Variability Aware *Device* Modeling and Circuit Design in 45nm Analog CMOS Technology.

Degree: 2014, Indian Institute of Science

URL: http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf

► Process variability is a major challenge for the design of nano scale MOSFETs due to fundamental physical limits as well as process control limitations. As…
(more)

Subjects/Keywords: Metal Oxide Semiconductors (MOS); Digital Integrated Circuits; Complementary Metal Oxide Semiconductors (CMOS); N-type Metal-Oxide Semiconductors (NMOS); P-type Metal-Oxide Semiconductors (PMOS); Metal Oxode Semiconductor Device Modeling; Look Up Table Model (LUT); Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET); MOSFET Models; BSIM Models; Variability Aware Device Modeling; Integrated Circuit Modeling; Circuit Design; 45nm Analog CMOS Technology; Electrical Communication Engineering

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

Ajayan, K. R. (2014). Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf

Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^{th} Edition):

Ajayan, K R. “Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology.” 2014. Thesis, Indian Institute of Science. Accessed December 19, 2018. http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf.

Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^{th} Edition):

Ajayan, K R. “Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology.” 2014. Web. 19 Dec 2018.

Vancouver:

Ajayan KR. Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology. [Internet] [Thesis]. Indian Institute of Science; 2014. [cited 2018 Dec 19]. Available from: http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf.

Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ajayan KR. Variability Aware Device Modeling and Circuit Design in 45nm Analog CMOS Technology. [Thesis]. Indian Institute of Science; 2014. Available from: http://etd.iisc.ernet.in/2005/3516 ; http://etd.iisc.ernet.in/abstracts/4383/G26726-Abs.pdf

Not specified: Masters Thesis or Doctoral Dissertation

8. Elhami Khorasani, Arash. Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers.

Degree: MS, Materials Science and Engineering, 2013, Arizona State University

URL: http://repository.asu.edu/items/17771

► Carrier lifetime is one of the few parameters which can give information about the low defect densities in today's semiconductors. In principle there is no…
(more)

Subjects/Keywords: Materials Science; Electrical engineering; Carrier Lifetime; Epitaxial Layers; MOS Capacitors; Semiconductor Defects; Semiconductor Device Measurement; Silicon

…channel *MOS* *device* showing the
occupancy of interface traps and the various charge polarities… …heavily inverted *MOS*-C *device*. Below is the charge
distribution diagram which shows the gate… …32
1.16 Seven generation mechanisms that drive the deep depleted *MOS*-C *device* back to… …35
1.18 C-t curve for a pulsed *MOS*-C *device* from accumulation to deep-depletion… …Figure 1.3: Band diagrams of the Si substrate of a p-channel *MOS* *device* showing the
occupancy…

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

Elhami Khorasani, A. (2013). Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/17771

Chicago Manual of Style (16^{th} Edition):

Elhami Khorasani, Arash. “Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers.” 2013. Masters Thesis, Arizona State University. Accessed December 19, 2018. http://repository.asu.edu/items/17771.

MLA Handbook (7^{th} Edition):

Elhami Khorasani, Arash. “Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers.” 2013. Web. 19 Dec 2018.

Vancouver:

Elhami Khorasani A. Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers. [Internet] [Masters thesis]. Arizona State University; 2013. [cited 2018 Dec 19]. Available from: http://repository.asu.edu/items/17771.

Council of Science Editors:

Elhami Khorasani A. Carrier Lifetime Measurement for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers. [Masters Thesis]. Arizona State University; 2013. Available from: http://repository.asu.edu/items/17771

9.
LIU CHANG.
AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (*MOS*-HEMTs) with novel gate oxides.

Degree: 2008, National University of Singapore

URL: http://scholarbank.nus.edu.sg/handle/10635/13138 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/9/bitstream

Subjects/Keywords: AlGaN/GaN HEMTs; MOS-HEMTs; high-k dielectric; epitaxial growth; pulsed-laser-deposition; device characterizations

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

CHANG, L. (2008). AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/13138 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/9/bitstream

Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^{th} Edition):

CHANG, LIU. “AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides.” 2008. Thesis, National University of Singapore. Accessed December 19, 2018. http://scholarbank.nus.edu.sg/handle/10635/13138 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/9/bitstream.

Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^{th} Edition):

CHANG, LIU. “AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides.” 2008. Web. 19 Dec 2018.

Vancouver:

CHANG L. AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides. [Internet] [Thesis]. National University of Singapore; 2008. [cited 2018 Dec 19]. Available from: http://scholarbank.nus.edu.sg/handle/10635/13138 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/9/bitstream.

Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

CHANG L. AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides. [Thesis]. National University of Singapore; 2008. Available from: http://scholarbank.nus.edu.sg/handle/10635/13138 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/10/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/11/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/12/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/13/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/14/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/15/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/16/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/17/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/18/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/4/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/5/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/6/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/7/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/8/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13138/9/bitstream

Not specified: Masters Thesis or Doctoral Dissertation

University of Central Florida

10.
Liu, Yi.
Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On *Mos* *Device* And Circuit Reliability.

Degree: 2005, University of Central Florida

URL: http://stars.library.ucf.edu/etd/349

► As CMOS *device* sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled…
(more)

Subjects/Keywords: Oxide Breakdown; Hot Carrier; NBTI; MOS; Device and Circuit; Reliability; Electrical and Computer Engineering; Electrical and Electronics; Engineering

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

Liu, Y. (2005). Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability. (Doctoral Dissertation). University of Central Florida. Retrieved from http://stars.library.ucf.edu/etd/349

Chicago Manual of Style (16^{th} Edition):

Liu, Yi. “Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability.” 2005. Doctoral Dissertation, University of Central Florida. Accessed December 19, 2018. http://stars.library.ucf.edu/etd/349.

MLA Handbook (7^{th} Edition):

Liu, Yi. “Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability.” 2005. Web. 19 Dec 2018.

Vancouver:

Liu Y. Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability. [Internet] [Doctoral dissertation]. University of Central Florida; 2005. [cited 2018 Dec 19]. Available from: http://stars.library.ucf.edu/etd/349.

Council of Science Editors:

Liu Y. Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability. [Doctoral Dissertation]. University of Central Florida; 2005. Available from: http://stars.library.ucf.edu/etd/349

11.
Burham, Cynthia Faye.
Development of an innovative fabrication method for n-*MOS* to p-*MOS* tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications.

Degree: Electrical and Computer Engineering, 2009, University of Texas – Austin

URL: http://hdl.handle.net/2152/11663

► Aggressive scaling required to augment *device* performance has caused conventional electrode materials to approach their physical scaling limits. Alternative metal gate/high dielectric constant (MG/High-[kappa]) stacks…
(more)

Subjects/Keywords: MG/High-[kappa] technology; Device fabrication; Cost reduction; Fin field effect transistors; 3 dimensional ultra thin body silicon on oxide; n-MOS; p-MOS

…scaled
*device* analysis. Specially designed *MOS* capacitors (MOSCAPs) must be… …for Conventional MOSFET Technology..........1
1.1.1 Conventional *Device* Structures… …4
1.1.4 Detrimental Effects on *Device* Performance of Gate Oxide
Scaling in Conventional… …54
CHAPTER 4 n-*MOS* TO p-*MOS* THICKNESS TUNABLE METAL
GATE/HIGH-κ ELECTRODE FinFETS UTILIZING… …36
xi
List of Figures
Figure 1.1: Developments in conventional and alternative *device*…

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

Burham, C. F. (2009). Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/11663

Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^{th} Edition):

Burham, Cynthia Faye. “Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications.” 2009. Thesis, University of Texas – Austin. Accessed December 19, 2018. http://hdl.handle.net/2152/11663.

Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^{th} Edition):

Burham, Cynthia Faye. “Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications.” 2009. Web. 19 Dec 2018.

Vancouver:

Burham CF. Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications. [Internet] [Thesis]. University of Texas – Austin; 2009. [cited 2018 Dec 19]. Available from: http://hdl.handle.net/2152/11663.

Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Burham CF. Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications. [Thesis]. University of Texas – Austin; 2009. Available from: http://hdl.handle.net/2152/11663

Not specified: Masters Thesis or Doctoral Dissertation

12. Gorti, Tejaswi. Silicon-based pH sensor for biological and environmental applications.

Degree: MS, 1200, 2012, University of Illinois – Urbana-Champaign

URL: http://hdl.handle.net/2142/34249

► In biological and environmental applications, it is desirable to be able to measure hydrogen and hydroxyl ion concentrations (pH levels). Conventionally, the measurement processes take…
(more)

Subjects/Keywords: Silicon; semiconductor; fabrication; solid state; device physics; biosensors; nanotechnology; microfluidics; pH; carrier transport; Metal-Oxide-Silicon (MOS) capacitor

…easily derive an electrical model for the IOSC *device*. It is safe to assume
that our *MOS*-C-like… …diagram.
The *MOS*-C is a two terminal *device*, essentially working like a variable capacitor… …operation for the *MOS*-C *device*. The
band diagram of each of these modes is shown in Fig. A.2.
The… …signal voltage, in which case, the CV
curve of the *MOS*-C *device* becomes dependent upon the… …capacitance, yielding Equation A.4 for total
capacitance. The overall CV curves for the *MOS*-C *device*…

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

Gorti, T. (2012). Silicon-based pH sensor for biological and environmental applications. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/34249

Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^{th} Edition):

Gorti, Tejaswi. “Silicon-based pH sensor for biological and environmental applications.” 2012. Thesis, University of Illinois – Urbana-Champaign. Accessed December 19, 2018. http://hdl.handle.net/2142/34249.

Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^{th} Edition):

Gorti, Tejaswi. “Silicon-based pH sensor for biological and environmental applications.” 2012. Web. 19 Dec 2018.

Vancouver:

Gorti T. Silicon-based pH sensor for biological and environmental applications. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2012. [cited 2018 Dec 19]. Available from: http://hdl.handle.net/2142/34249.

Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gorti T. Silicon-based pH sensor for biological and environmental applications. [Thesis]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/34249

Not specified: Masters Thesis or Doctoral Dissertation

University of Central Florida

13. Shea, Patrick. Design And Modeling Of Radiation Hardened Ldmosfet For Space Craft Power Systems.

Degree: 2007, University of Central Florida

URL: http://stars.library.ucf.edu/etd/3344

► NASA missions require innovative power electronics system and component solutions with long life capability, high radiation tolerance, low mass and volume, and high reliability in…
(more)

Subjects/Keywords: Heavy ions; MOS Devices; MOSFETs; Power FETs; Power Semiconductor Devices; radiation hardening; radiation effects; Semiconductor devices; Semiconductor device modeling; Semiconductor device radiation effects; Electrical and Computer Engineering; Electrical and Electronics; Engineering

Record Details Similar Records

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^{th} Edition):

Shea, P. (2007). Design And Modeling Of Radiation Hardened Ldmosfet For Space Craft Power Systems. (Masters Thesis). University of Central Florida. Retrieved from http://stars.library.ucf.edu/etd/3344

Chicago Manual of Style (16^{th} Edition):

Shea, Patrick. “Design And Modeling Of Radiation Hardened Ldmosfet For Space Craft Power Systems.” 2007. Masters Thesis, University of Central Florida. Accessed December 19, 2018. http://stars.library.ucf.edu/etd/3344.

MLA Handbook (7^{th} Edition):

Shea, Patrick. “Design And Modeling Of Radiation Hardened Ldmosfet For Space Craft Power Systems.” 2007. Web. 19 Dec 2018.

Vancouver:

Shea P. Design And Modeling Of Radiation Hardened Ldmosfet For Space Craft Power Systems. [Internet] [Masters thesis]. University of Central Florida; 2007. [cited 2018 Dec 19]. Available from: http://stars.library.ucf.edu/etd/3344.

Council of Science Editors:

Shea P. Design And Modeling Of Radiation Hardened Ldmosfet For Space Craft Power Systems. [Masters Thesis]. University of Central Florida; 2007. Available from: http://stars.library.ucf.edu/etd/3344