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You searched for subject:(MESFET). Showing records 1 – 30 of 44 total matches.

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University of Canterbury

1. Turner, Gary Chandler. Zinc Oxide MESFET Transistors.

Degree: Electrical and Computer Engineering, 2009, University of Canterbury

 Zinc oxide is a familiar ingredient in common household items including sunscreen and medicines. It is, however, also a semiconductor material. As such, it is… (more)

Subjects/Keywords: Zinc Oxide; MESFET; Transistor; Schottky

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APA (6th Edition):

Turner, G. C. (2009). Zinc Oxide MESFET Transistors. (Thesis). University of Canterbury. Retrieved from http://hdl.handle.net/10092/3439

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Turner, Gary Chandler. “Zinc Oxide MESFET Transistors.” 2009. Thesis, University of Canterbury. Accessed May 26, 2019. http://hdl.handle.net/10092/3439.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Turner, Gary Chandler. “Zinc Oxide MESFET Transistors.” 2009. Web. 26 May 2019.

Vancouver:

Turner GC. Zinc Oxide MESFET Transistors. [Internet] [Thesis]. University of Canterbury; 2009. [cited 2019 May 26]. Available from: http://hdl.handle.net/10092/3439.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Turner GC. Zinc Oxide MESFET Transistors. [Thesis]. University of Canterbury; 2009. Available from: http://hdl.handle.net/10092/3439

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Arizona State University

2. Summers, Nicholas Burton. The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits.

Degree: MS, Electrical Engineering, 2010, Arizona State University

 Silicon Carbide (SiC) junction field effect transistors (JFETs) are ideal for switching high current, high voltage loads in high temperature environments. These devices require external… (more)

Subjects/Keywords: Electrical Engineering; MESFET; SiC; SOI

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APA (6th Edition):

Summers, N. B. (2010). The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/8692

Chicago Manual of Style (16th Edition):

Summers, Nicholas Burton. “The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits.” 2010. Masters Thesis, Arizona State University. Accessed May 26, 2019. http://repository.asu.edu/items/8692.

MLA Handbook (7th Edition):

Summers, Nicholas Burton. “The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits.” 2010. Web. 26 May 2019.

Vancouver:

Summers NB. The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits. [Internet] [Masters thesis]. Arizona State University; 2010. [cited 2019 May 26]. Available from: http://repository.asu.edu/items/8692.

Council of Science Editors:

Summers NB. The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits. [Masters Thesis]. Arizona State University; 2010. Available from: http://repository.asu.edu/items/8692


Arizona State University

3. Lepkowski, William. Optimizing the Design of Partially and Fully Depleted MESFETs for Low Dropout Regulators.

Degree: PhD, Electrical Engineering, 2010, Arizona State University

 The constant scaling of supply voltages in state-of-the-art CMOS processes has led to severe limitations for many analog circuit applications. Some CMOS processes have addressed… (more)

Subjects/Keywords: Electrical Engineering; Engineering; LDO; MESFET

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APA (6th Edition):

Lepkowski, W. (2010). Optimizing the Design of Partially and Fully Depleted MESFETs for Low Dropout Regulators. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/8790

Chicago Manual of Style (16th Edition):

Lepkowski, William. “Optimizing the Design of Partially and Fully Depleted MESFETs for Low Dropout Regulators.” 2010. Doctoral Dissertation, Arizona State University. Accessed May 26, 2019. http://repository.asu.edu/items/8790.

MLA Handbook (7th Edition):

Lepkowski, William. “Optimizing the Design of Partially and Fully Depleted MESFETs for Low Dropout Regulators.” 2010. Web. 26 May 2019.

Vancouver:

Lepkowski W. Optimizing the Design of Partially and Fully Depleted MESFETs for Low Dropout Regulators. [Internet] [Doctoral dissertation]. Arizona State University; 2010. [cited 2019 May 26]. Available from: http://repository.asu.edu/items/8790.

Council of Science Editors:

Lepkowski W. Optimizing the Design of Partially and Fully Depleted MESFETs for Low Dropout Regulators. [Doctoral Dissertation]. Arizona State University; 2010. Available from: http://repository.asu.edu/items/8790


Ohio University

4. Ho, Wai. GaAs MESFET modeling and its applications.

Degree: MS, Electrical Engineering & Computer Science (Engineering and Technology), 1993, Ohio University

GaAs MESFET modeling and its applications Advisors/Committee Members: Mokari, M. (Advisor).

Subjects/Keywords: GaAs MESFET modeling; MESFET; GaAs

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APA (6th Edition):

Ho, W. (1993). GaAs MESFET modeling and its applications. (Masters Thesis). Ohio University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072

Chicago Manual of Style (16th Edition):

Ho, Wai. “GaAs MESFET modeling and its applications.” 1993. Masters Thesis, Ohio University. Accessed May 26, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072.

MLA Handbook (7th Edition):

Ho, Wai. “GaAs MESFET modeling and its applications.” 1993. Web. 26 May 2019.

Vancouver:

Ho W. GaAs MESFET modeling and its applications. [Internet] [Masters thesis]. Ohio University; 1993. [cited 2019 May 26]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072.

Council of Science Editors:

Ho W. GaAs MESFET modeling and its applications. [Masters Thesis]. Ohio University; 1993. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072


North Carolina State University

5. Zeng, Chang. GaN MOSFETs for Low Power Giga Scale LSI Logic.

Degree: PhD, Electrical Engineering, 2007, North Carolina State University

 Advances in material quality and device processing have led to promising results for III-nitride electronic devices for high frequency applications. Numerous groups have report that… (more)

Subjects/Keywords: MESFET; GaN; MOSFET

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APA (6th Edition):

Zeng, C. (2007). GaN MOSFETs for Low Power Giga Scale LSI Logic. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3621

Chicago Manual of Style (16th Edition):

Zeng, Chang. “GaN MOSFETs for Low Power Giga Scale LSI Logic.” 2007. Doctoral Dissertation, North Carolina State University. Accessed May 26, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3621.

MLA Handbook (7th Edition):

Zeng, Chang. “GaN MOSFETs for Low Power Giga Scale LSI Logic.” 2007. Web. 26 May 2019.

Vancouver:

Zeng C. GaN MOSFETs for Low Power Giga Scale LSI Logic. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2019 May 26]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3621.

Council of Science Editors:

Zeng C. GaN MOSFETs for Low Power Giga Scale LSI Logic. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3621


California State University – Northridge

6. Vedati, Divakar. An analytical model of drain induced barrier lowering effect for gallium nitride (GaN) MESFET???s.

Degree: MS, Department of Elec & Comp Engr, 2013, California State University – Northridge

 An Analytical modeling of gallium nitride (GaN) MESFET has been developed to determine the behavior of drain induced barrier lowering (DIBL). The analytical model incorporates… (more)

Subjects/Keywords: GaN MESFET; Dissertations, Academic  – CSUN  – Engineering  – Electrical and Computer Engineering.

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APA (6th Edition):

Vedati, D. (2013). An analytical model of drain induced barrier lowering effect for gallium nitride (GaN) MESFET???s. (Masters Thesis). California State University – Northridge. Retrieved from http://hdl.handle.net/10211.2/2468

Chicago Manual of Style (16th Edition):

Vedati, Divakar. “An analytical model of drain induced barrier lowering effect for gallium nitride (GaN) MESFET???s.” 2013. Masters Thesis, California State University – Northridge. Accessed May 26, 2019. http://hdl.handle.net/10211.2/2468.

MLA Handbook (7th Edition):

Vedati, Divakar. “An analytical model of drain induced barrier lowering effect for gallium nitride (GaN) MESFET???s.” 2013. Web. 26 May 2019.

Vancouver:

Vedati D. An analytical model of drain induced barrier lowering effect for gallium nitride (GaN) MESFET???s. [Internet] [Masters thesis]. California State University – Northridge; 2013. [cited 2019 May 26]. Available from: http://hdl.handle.net/10211.2/2468.

Council of Science Editors:

Vedati D. An analytical model of drain induced barrier lowering effect for gallium nitride (GaN) MESFET???s. [Masters Thesis]. California State University – Northridge; 2013. Available from: http://hdl.handle.net/10211.2/2468

7. ZHONG ZHENG. Novel modelling methods for microwave GaAs MESFET device.

Degree: 2010, National University of Singapore

Subjects/Keywords: MODELLING; GaAs MESFET DEVICE

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APA (6th Edition):

ZHENG, Z. (2010). Novel modelling methods for microwave GaAs MESFET device. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/20990 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F20990/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F20990/2/bitstream

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

ZHENG, ZHONG. “Novel modelling methods for microwave GaAs MESFET device.” 2010. Thesis, National University of Singapore. Accessed May 26, 2019. http://scholarbank.nus.edu.sg/handle/10635/20990 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F20990/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F20990/2/bitstream.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

ZHENG, ZHONG. “Novel modelling methods for microwave GaAs MESFET device.” 2010. Web. 26 May 2019.

Vancouver:

ZHENG Z. Novel modelling methods for microwave GaAs MESFET device. [Internet] [Thesis]. National University of Singapore; 2010. [cited 2019 May 26]. Available from: http://scholarbank.nus.edu.sg/handle/10635/20990 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F20990/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F20990/2/bitstream.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

ZHENG Z. Novel modelling methods for microwave GaAs MESFET device. [Thesis]. National University of Singapore; 2010. Available from: http://scholarbank.nus.edu.sg/handle/10635/20990 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F20990/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F20990/2/bitstream

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


California State University – Northridge

8. Movva, Srikanth. A physics based frequency dispersion model of SiC MESFET.

Degree: MS, Department of Electrical and Computer Engineering., 2018, California State University – Northridge

 This project involves in determining the frequency response considering the effect of transconductance and gate capacitance by developing an analytical model of Silicon Carbide (SiC)… (more)

Subjects/Keywords: MESFET IV characteristics; Dissertations, Academic  – CSUN  – Engineering  – Electrical and Computer Engineering.

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APA (6th Edition):

Movva, S. (2018). A physics based frequency dispersion model of SiC MESFET. (Masters Thesis). California State University – Northridge. Retrieved from http://hdl.handle.net/10211.3/199736

Chicago Manual of Style (16th Edition):

Movva, Srikanth. “A physics based frequency dispersion model of SiC MESFET.” 2018. Masters Thesis, California State University – Northridge. Accessed May 26, 2019. http://hdl.handle.net/10211.3/199736.

MLA Handbook (7th Edition):

Movva, Srikanth. “A physics based frequency dispersion model of SiC MESFET.” 2018. Web. 26 May 2019.

Vancouver:

Movva S. A physics based frequency dispersion model of SiC MESFET. [Internet] [Masters thesis]. California State University – Northridge; 2018. [cited 2019 May 26]. Available from: http://hdl.handle.net/10211.3/199736.

Council of Science Editors:

Movva S. A physics based frequency dispersion model of SiC MESFET. [Masters Thesis]. California State University – Northridge; 2018. Available from: http://hdl.handle.net/10211.3/199736


California State University – Northridge

9. Garugu, Ravi Teja Reddy. Physics based analytical model of the frequency behaviour of 4H-SiC MESFET.

Degree: MS, Department of Electrical and Computer Engineering., 2018, California State University – Northridge

 A physics based analytical modeling of SiC MESFET has been presented in this grad thesis to evaluate I-V characteristics, and transconductance under traps effects. The… (more)

Subjects/Keywords: 4H-SiC MESFET; Dissertations, Academic  – CSUN  – Engineering  – Electrical and Computer Engineering.

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APA (6th Edition):

Garugu, R. T. R. (2018). Physics based analytical model of the frequency behaviour of 4H-SiC MESFET. (Masters Thesis). California State University – Northridge. Retrieved from http://hdl.handle.net/10211.3/199753

Chicago Manual of Style (16th Edition):

Garugu, Ravi Teja Reddy. “Physics based analytical model of the frequency behaviour of 4H-SiC MESFET.” 2018. Masters Thesis, California State University – Northridge. Accessed May 26, 2019. http://hdl.handle.net/10211.3/199753.

MLA Handbook (7th Edition):

Garugu, Ravi Teja Reddy. “Physics based analytical model of the frequency behaviour of 4H-SiC MESFET.” 2018. Web. 26 May 2019.

Vancouver:

Garugu RTR. Physics based analytical model of the frequency behaviour of 4H-SiC MESFET. [Internet] [Masters thesis]. California State University – Northridge; 2018. [cited 2019 May 26]. Available from: http://hdl.handle.net/10211.3/199753.

Council of Science Editors:

Garugu RTR. Physics based analytical model of the frequency behaviour of 4H-SiC MESFET. [Masters Thesis]. California State University – Northridge; 2018. Available from: http://hdl.handle.net/10211.3/199753


University of Canterbury

10. Whiteside, Matthew David. Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide.

Degree: Electrical and Electronic Engineering, 2014, University of Canterbury

 Indium-Gallium-Zinc-Oxide (a-IGZO) is an amorphous oxide semiconductor that has been attracting increasing attention for use in flat panel display and optoelectronic applications. This is largely… (more)

Subjects/Keywords: IGZO; Indium Gallium Zinc Oxide; MESFET; AOS; Amorphous Semiconductor; Transparent Flexible Electronics

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APA (6th Edition):

Whiteside, M. D. (2014). Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide. (Thesis). University of Canterbury. Retrieved from http://hdl.handle.net/10092/9588

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Whiteside, Matthew David. “Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide.” 2014. Thesis, University of Canterbury. Accessed May 26, 2019. http://hdl.handle.net/10092/9588.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Whiteside, Matthew David. “Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide.” 2014. Web. 26 May 2019.

Vancouver:

Whiteside MD. Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide. [Internet] [Thesis]. University of Canterbury; 2014. [cited 2019 May 26]. Available from: http://hdl.handle.net/10092/9588.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Whiteside MD. Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide. [Thesis]. University of Canterbury; 2014. Available from: http://hdl.handle.net/10092/9588

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Arizona State University

11. Sochacki, John J. MESFET Optimization and Innovative Design for High Current Device Applications.

Degree: MS, Electrical Engineering, 2011, Arizona State University

 There will always be a need for high current/voltage transistors. A transistor that has the ability to be both or either of these things is… (more)

Subjects/Keywords: Electrical Engineering; device invention; High Current; MESFET; Optimization; Partially Depleted Lattice; RF

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APA (6th Edition):

Sochacki, J. J. (2011). MESFET Optimization and Innovative Design for High Current Device Applications. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/9233

Chicago Manual of Style (16th Edition):

Sochacki, John J. “MESFET Optimization and Innovative Design for High Current Device Applications.” 2011. Masters Thesis, Arizona State University. Accessed May 26, 2019. http://repository.asu.edu/items/9233.

MLA Handbook (7th Edition):

Sochacki, John J. “MESFET Optimization and Innovative Design for High Current Device Applications.” 2011. Web. 26 May 2019.

Vancouver:

Sochacki JJ. MESFET Optimization and Innovative Design for High Current Device Applications. [Internet] [Masters thesis]. Arizona State University; 2011. [cited 2019 May 26]. Available from: http://repository.asu.edu/items/9233.

Council of Science Editors:

Sochacki JJ. MESFET Optimization and Innovative Design for High Current Device Applications. [Masters Thesis]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/9233


Université de Sherbrooke

12. Joyal, Marc-André. Étude et fabrication de circuits amplificateurs dédiés aux métamatériaux électromagnétiques rayonnants .

Degree: 2009, Université de Sherbrooke

 Ce mémoire de maîtrise traite des circuits actifs amplificateurs dont la conception est faite spécialement pour qu'ils soient intégrés aux métamatériaux électromagnétiques, en particulier à… (more)

Subjects/Keywords: Micro-fabrication; MESFET; Métamatériaux; Déphaseurs; Commutateurs; Antenne à ondes de fuite CRLH active; Amplificateurs

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APA (6th Edition):

Joyal, M. (2009). Étude et fabrication de circuits amplificateurs dédiés aux métamatériaux électromagnétiques rayonnants . (Masters Thesis). Université de Sherbrooke. Retrieved from http://savoirs.usherbrooke.ca/handle/11143/1490

Chicago Manual of Style (16th Edition):

Joyal, Marc-André. “Étude et fabrication de circuits amplificateurs dédiés aux métamatériaux électromagnétiques rayonnants .” 2009. Masters Thesis, Université de Sherbrooke. Accessed May 26, 2019. http://savoirs.usherbrooke.ca/handle/11143/1490.

MLA Handbook (7th Edition):

Joyal, Marc-André. “Étude et fabrication de circuits amplificateurs dédiés aux métamatériaux électromagnétiques rayonnants .” 2009. Web. 26 May 2019.

Vancouver:

Joyal M. Étude et fabrication de circuits amplificateurs dédiés aux métamatériaux électromagnétiques rayonnants . [Internet] [Masters thesis]. Université de Sherbrooke; 2009. [cited 2019 May 26]. Available from: http://savoirs.usherbrooke.ca/handle/11143/1490.

Council of Science Editors:

Joyal M. Étude et fabrication de circuits amplificateurs dédiés aux métamatériaux électromagnétiques rayonnants . [Masters Thesis]. Université de Sherbrooke; 2009. Available from: http://savoirs.usherbrooke.ca/handle/11143/1490


Mississippi State University

13. Adjaye, John. INFLUENCE OF SOURCE/DRAIN RESIDUAL IMPLANT LATTICE DAMAGE TRAPS ON SILICON CARBIDE METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR DRAIN I-V CHARACTERISTICS.

Degree: PhD, Electrical and Computer Engineering, 2007, Mississippi State University

 4H-SiC n-channel power MESFETs with nitrogen-doped epitaxially grown channel and nitrogen n+-implanted source/drain ohmic contact regions, with and without p-buffer layer fabricated on semi-insulating substrates… (more)

Subjects/Keywords: IMPLANT DAMAGE; SILICON CARBIDE; IMPLANTATION; MESFET

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APA (6th Edition):

Adjaye, J. (2007). INFLUENCE OF SOURCE/DRAIN RESIDUAL IMPLANT LATTICE DAMAGE TRAPS ON SILICON CARBIDE METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR DRAIN I-V CHARACTERISTICS. (Doctoral Dissertation). Mississippi State University. Retrieved from http://sun.library.msstate.edu/ETD-db/theses/available/etd-09242007-081525/ ;

Chicago Manual of Style (16th Edition):

Adjaye, John. “INFLUENCE OF SOURCE/DRAIN RESIDUAL IMPLANT LATTICE DAMAGE TRAPS ON SILICON CARBIDE METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR DRAIN I-V CHARACTERISTICS.” 2007. Doctoral Dissertation, Mississippi State University. Accessed May 26, 2019. http://sun.library.msstate.edu/ETD-db/theses/available/etd-09242007-081525/ ;.

MLA Handbook (7th Edition):

Adjaye, John. “INFLUENCE OF SOURCE/DRAIN RESIDUAL IMPLANT LATTICE DAMAGE TRAPS ON SILICON CARBIDE METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR DRAIN I-V CHARACTERISTICS.” 2007. Web. 26 May 2019.

Vancouver:

Adjaye J. INFLUENCE OF SOURCE/DRAIN RESIDUAL IMPLANT LATTICE DAMAGE TRAPS ON SILICON CARBIDE METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR DRAIN I-V CHARACTERISTICS. [Internet] [Doctoral dissertation]. Mississippi State University; 2007. [cited 2019 May 26]. Available from: http://sun.library.msstate.edu/ETD-db/theses/available/etd-09242007-081525/ ;.

Council of Science Editors:

Adjaye J. INFLUENCE OF SOURCE/DRAIN RESIDUAL IMPLANT LATTICE DAMAGE TRAPS ON SILICON CARBIDE METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR DRAIN I-V CHARACTERISTICS. [Doctoral Dissertation]. Mississippi State University; 2007. Available from: http://sun.library.msstate.edu/ETD-db/theses/available/etd-09242007-081525/ ;

14. Phulpin, Tanguy. Contribution à l'analyse des mécanismes de défaillance lors de décharges électrostatiques et de radiations aux ions lourds de composants MESFET en carbure de silicium : Tribute to failure mechanism analyze during electrosttic discharge or heavy ion radiation on silicon carbide MESFET.

Degree: Docteur es, Composants et systèmes de gestion de l'énergie, 2017, Université Toulouse III – Paul Sabatier

La gestion de l'énergie électrique est au cœur des enjeux environnementaux. L'éclosion de semi-conducteurs à grand gap comme le carbure de silicium (SiC) permet la… (more)

Subjects/Keywords: MESFET; Cabure de silicium (SiC); ESD; Radiation; Ion lourd; Robustesse; Lock-in thermographie; Diode Zener

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APA (6th Edition):

Phulpin, T. (2017). Contribution à l'analyse des mécanismes de défaillance lors de décharges électrostatiques et de radiations aux ions lourds de composants MESFET en carbure de silicium : Tribute to failure mechanism analyze during electrosttic discharge or heavy ion radiation on silicon carbide MESFET. (Doctoral Dissertation). Université Toulouse III – Paul Sabatier. Retrieved from http://www.theses.fr/2017TOU30049

Chicago Manual of Style (16th Edition):

Phulpin, Tanguy. “Contribution à l'analyse des mécanismes de défaillance lors de décharges électrostatiques et de radiations aux ions lourds de composants MESFET en carbure de silicium : Tribute to failure mechanism analyze during electrosttic discharge or heavy ion radiation on silicon carbide MESFET.” 2017. Doctoral Dissertation, Université Toulouse III – Paul Sabatier. Accessed May 26, 2019. http://www.theses.fr/2017TOU30049.

MLA Handbook (7th Edition):

Phulpin, Tanguy. “Contribution à l'analyse des mécanismes de défaillance lors de décharges électrostatiques et de radiations aux ions lourds de composants MESFET en carbure de silicium : Tribute to failure mechanism analyze during electrosttic discharge or heavy ion radiation on silicon carbide MESFET.” 2017. Web. 26 May 2019.

Vancouver:

Phulpin T. Contribution à l'analyse des mécanismes de défaillance lors de décharges électrostatiques et de radiations aux ions lourds de composants MESFET en carbure de silicium : Tribute to failure mechanism analyze during electrosttic discharge or heavy ion radiation on silicon carbide MESFET. [Internet] [Doctoral dissertation]. Université Toulouse III – Paul Sabatier; 2017. [cited 2019 May 26]. Available from: http://www.theses.fr/2017TOU30049.

Council of Science Editors:

Phulpin T. Contribution à l'analyse des mécanismes de défaillance lors de décharges électrostatiques et de radiations aux ions lourds de composants MESFET en carbure de silicium : Tribute to failure mechanism analyze during electrosttic discharge or heavy ion radiation on silicon carbide MESFET. [Doctoral Dissertation]. Université Toulouse III – Paul Sabatier; 2017. Available from: http://www.theses.fr/2017TOU30049


University of Illinois – Urbana-Champaign

15. Fortuna, Seth A. Growth and application of planar III-V semiconductor nanowires grown with MOCVD.

Degree: MS, 1200, 2010, University of Illinois – Urbana-Champaign

 The semiconductor nanowire has been widely studied over the past decade and identified as a promising nanotechnology building block with application in photonics and electronics.… (more)

Subjects/Keywords: Metalorganic chemical vapor deposition (MOCVD); nanotechnology; GaAs; Metal-semiconductor field effect transistor (MESFET); nanowire; semiconductor

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APA (6th Edition):

Fortuna, S. A. (2010). Growth and application of planar III-V semiconductor nanowires grown with MOCVD. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/14730

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Fortuna, Seth A. “Growth and application of planar III-V semiconductor nanowires grown with MOCVD.” 2010. Thesis, University of Illinois – Urbana-Champaign. Accessed May 26, 2019. http://hdl.handle.net/2142/14730.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Fortuna, Seth A. “Growth and application of planar III-V semiconductor nanowires grown with MOCVD.” 2010. Web. 26 May 2019.

Vancouver:

Fortuna SA. Growth and application of planar III-V semiconductor nanowires grown with MOCVD. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 May 26]. Available from: http://hdl.handle.net/2142/14730.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fortuna SA. Growth and application of planar III-V semiconductor nanowires grown with MOCVD. [Thesis]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/14730

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Ohio University

16. Olbers, Robert L. A physical-based nonlinear model for the GaAs MESFET with parameter optimization.

Degree: MS, Electrical Engineering & Computer Science (Engineering and Technology), 1991, Ohio University

A physical-based nonlinear model for the GaAs MESFET with parameter optimization Advisors/Committee Members: Mokari, M. (Advisor).

Subjects/Keywords: Physical-Based Nonlinear Model; GaAs MESFET; Parameter Optimization

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APA (6th Edition):

Olbers, R. L. (1991). A physical-based nonlinear model for the GaAs MESFET with parameter optimization. (Masters Thesis). Ohio University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1183735375

Chicago Manual of Style (16th Edition):

Olbers, Robert L. “A physical-based nonlinear model for the GaAs MESFET with parameter optimization.” 1991. Masters Thesis, Ohio University. Accessed May 26, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1183735375.

MLA Handbook (7th Edition):

Olbers, Robert L. “A physical-based nonlinear model for the GaAs MESFET with parameter optimization.” 1991. Web. 26 May 2019.

Vancouver:

Olbers RL. A physical-based nonlinear model for the GaAs MESFET with parameter optimization. [Internet] [Masters thesis]. Ohio University; 1991. [cited 2019 May 26]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1183735375.

Council of Science Editors:

Olbers RL. A physical-based nonlinear model for the GaAs MESFET with parameter optimization. [Masters Thesis]. Ohio University; 1991. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1183735375

17. MA JINGYI. Large signal modeling of GaAs MESFET device.

Degree: 2004, National University of Singapore

Subjects/Keywords: GaAs MESFET; Large Signal Model; Small Signal Model

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APA (6th Edition):

JINGYI, M. (2004). Large signal modeling of GaAs MESFET device. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/13653 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/4/bitstream

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

JINGYI, MA. “Large signal modeling of GaAs MESFET device.” 2004. Thesis, National University of Singapore. Accessed May 26, 2019. http://scholarbank.nus.edu.sg/handle/10635/13653 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/4/bitstream.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

JINGYI, MA. “Large signal modeling of GaAs MESFET device.” 2004. Web. 26 May 2019.

Vancouver:

JINGYI M. Large signal modeling of GaAs MESFET device. [Internet] [Thesis]. National University of Singapore; 2004. [cited 2019 May 26]. Available from: http://scholarbank.nus.edu.sg/handle/10635/13653 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/4/bitstream.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

JINGYI M. Large signal modeling of GaAs MESFET device. [Thesis]. National University of Singapore; 2004. Available from: http://scholarbank.nus.edu.sg/handle/10635/13653 ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/1/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/2/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/3/bitstream ; http://scholarbank.nus.edu.sg/bitstream/10635%2F13653/4/bitstream

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Virginia Tech

18. Lau, Mark C. Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device.

Degree: MS, Electrical Engineering, 1997, Virginia Tech

 The development of microwave Gallium Arsenide Metal Semiconductor Field Effect Transistor (MESFET) devices has enabled the miniaturization of pagers, cellular phones, and other electronic devices.… (more)

Subjects/Keywords: MESFET; Gallium Arsenide; Small Signal; Modeling; Simplex Method

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APA (6th Edition):

Lau, M. C. (1997). Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/36952

Chicago Manual of Style (16th Edition):

Lau, Mark C. “Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device.” 1997. Masters Thesis, Virginia Tech. Accessed May 26, 2019. http://hdl.handle.net/10919/36952.

MLA Handbook (7th Edition):

Lau, Mark C. “Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device.” 1997. Web. 26 May 2019.

Vancouver:

Lau MC. Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device. [Internet] [Masters thesis]. Virginia Tech; 1997. [cited 2019 May 26]. Available from: http://hdl.handle.net/10919/36952.

Council of Science Editors:

Lau MC. Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device. [Masters Thesis]. Virginia Tech; 1997. Available from: http://hdl.handle.net/10919/36952


University of New South Wales

19. Ullah, Abu Rifat. Phase-pure indium arsenide and p-type gallium arsenide nanowire devices.

Degree: Physics, 2018, University of New South Wales

 The advent of semiconducting nanowires has initiated research in many areas. The bottom-up growth can allows access to crystal phases which are unavailable in bulk… (more)

Subjects/Keywords: GaAs nanowire; Phase-pure nanowire; InAs nanowire device; p-GaAs device; Wurtzite; Zincblende; Polymer electrolyte; GaAs etching; MESFET

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APA (6th Edition):

Ullah, A. R. (2018). Phase-pure indium arsenide and p-type gallium arsenide nanowire devices. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Ullah, Abu Rifat. “Phase-pure indium arsenide and p-type gallium arsenide nanowire devices.” 2018. Doctoral Dissertation, University of New South Wales. Accessed May 26, 2019. http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true.

MLA Handbook (7th Edition):

Ullah, Abu Rifat. “Phase-pure indium arsenide and p-type gallium arsenide nanowire devices.” 2018. Web. 26 May 2019.

Vancouver:

Ullah AR. Phase-pure indium arsenide and p-type gallium arsenide nanowire devices. [Internet] [Doctoral dissertation]. University of New South Wales; 2018. [cited 2019 May 26]. Available from: http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true.

Council of Science Editors:

Ullah AR. Phase-pure indium arsenide and p-type gallium arsenide nanowire devices. [Doctoral Dissertation]. University of New South Wales; 2018. Available from: http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true


Universidad de Cantabria

20. Chaibi, Mohamed. Estudio, caracterización y modelado avanzado de los efectos térmicos y trampa en los Transistores MESFET y HEMT de Microondas.

Degree: Departamento de Ingeniería de Comunicaciones, 2010, Universidad de Cantabria

 In this thesis, a new nonlinear model of GaAs and GaN MESFET/HEMT transistors including thermal and traps effects shown in this kind of devices has… (more)

Subjects/Keywords: Nonlinear modelling; Thermal effect; Trapping effect; GaAs and GaN MESFET/HEMT transis; Medidas pulsadas; Modelado no lineal; Efectos térmicos; Efectos trampa; Transistores MESFET/HEMT de GaAs y GaN; Pulsed measurements; Teoría de la señal y comunicaciones; 62; 621.3

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APA (6th Edition):

Chaibi, M. (2010). Estudio, caracterización y modelado avanzado de los efectos térmicos y trampa en los Transistores MESFET y HEMT de Microondas. (Thesis). Universidad de Cantabria. Retrieved from http://hdl.handle.net/10803/10676

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chaibi, Mohamed. “Estudio, caracterización y modelado avanzado de los efectos térmicos y trampa en los Transistores MESFET y HEMT de Microondas.” 2010. Thesis, Universidad de Cantabria. Accessed May 26, 2019. http://hdl.handle.net/10803/10676.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chaibi, Mohamed. “Estudio, caracterización y modelado avanzado de los efectos térmicos y trampa en los Transistores MESFET y HEMT de Microondas.” 2010. Web. 26 May 2019.

Vancouver:

Chaibi M. Estudio, caracterización y modelado avanzado de los efectos térmicos y trampa en los Transistores MESFET y HEMT de Microondas. [Internet] [Thesis]. Universidad de Cantabria; 2010. [cited 2019 May 26]. Available from: http://hdl.handle.net/10803/10676.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chaibi M. Estudio, caracterización y modelado avanzado de los efectos térmicos y trampa en los Transistores MESFET y HEMT de Microondas. [Thesis]. Universidad de Cantabria; 2010. Available from: http://hdl.handle.net/10803/10676

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Keelapudi, Balasubramaniyam. Analytical modeling of silicon carbide MESFET.

Degree: MS, Department of Electrical & Computer Engineering, 2012, California State University – Northridge

 This study concentrates on analytical modeling of silicon carbide MESFET device using MATH Lab software. In this study, an analytical simulation has been proposed to… (more)

Subjects/Keywords: SiC MESFET; Dissertations, Academic  – CSUN  – Engineering  – Electrical and Computer Engineering.

…established polytype. Submicron’s MESFET's have been fabricated in 6H-Sic and have demonstrated… …and GaN based MESFET High power Silicon Carbide devices are expected to play an important… …commercial 1 Products have hit the marketplace [8]. Packaged 30mm SiC MESFET… …revealed instabilities in standard SiC MESFET device electrical characteristics, which have been… …top of a SiC MESFET to form a “buried-channel” structure where the active current carrying… 

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APA (6th Edition):

Keelapudi, B. (2012). Analytical modeling of silicon carbide MESFET. (Masters Thesis). California State University – Northridge. Retrieved from http://hdl.handle.net/10211.2/1534

Chicago Manual of Style (16th Edition):

Keelapudi, Balasubramaniyam. “Analytical modeling of silicon carbide MESFET.” 2012. Masters Thesis, California State University – Northridge. Accessed May 26, 2019. http://hdl.handle.net/10211.2/1534.

MLA Handbook (7th Edition):

Keelapudi, Balasubramaniyam. “Analytical modeling of silicon carbide MESFET.” 2012. Web. 26 May 2019.

Vancouver:

Keelapudi B. Analytical modeling of silicon carbide MESFET. [Internet] [Masters thesis]. California State University – Northridge; 2012. [cited 2019 May 26]. Available from: http://hdl.handle.net/10211.2/1534.

Council of Science Editors:

Keelapudi B. Analytical modeling of silicon carbide MESFET. [Masters Thesis]. California State University – Northridge; 2012. Available from: http://hdl.handle.net/10211.2/1534

22. Raghavaraju, Venkata Chakri Ramana Raju. An analytical model for transconductance and drain conductance of silicon carbide MESFET.

Degree: MS, Department of Elec & Comp Engr, 2015, California State University – Northridge

 In this research project as a graduate thesis, a physics based analytical model has been developed to evaluate the I-V characteristics, transconductance and drain conductance… (more)

Subjects/Keywords: MESFET; Dissertations, Academic  – CSUN  – Engineering  – Electrical and Computer Engineering.

…the metal semiconductor field transistor (MESFET) indigent upon SiC has been major… …heightened recurrence transistor. SiC based power MESFET has pulled in awe inspiring attention for… …losses at working temperature [10]. Increased power SiC MESFET units made by K. P… …influences the tendency of the device as the MESFET layers are optimal. That defines the thermal… …silicon carbide epitaxial layer grown on a different substrate are not same. Similarly, MESFET… 

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APA (6th Edition):

Raghavaraju, V. C. R. R. (2015). An analytical model for transconductance and drain conductance of silicon carbide MESFET. (Masters Thesis). California State University – Northridge. Retrieved from http://hdl.handle.net/10211.3/133216

Chicago Manual of Style (16th Edition):

Raghavaraju, Venkata Chakri Ramana Raju. “An analytical model for transconductance and drain conductance of silicon carbide MESFET.” 2015. Masters Thesis, California State University – Northridge. Accessed May 26, 2019. http://hdl.handle.net/10211.3/133216.

MLA Handbook (7th Edition):

Raghavaraju, Venkata Chakri Ramana Raju. “An analytical model for transconductance and drain conductance of silicon carbide MESFET.” 2015. Web. 26 May 2019.

Vancouver:

Raghavaraju VCRR. An analytical model for transconductance and drain conductance of silicon carbide MESFET. [Internet] [Masters thesis]. California State University – Northridge; 2015. [cited 2019 May 26]. Available from: http://hdl.handle.net/10211.3/133216.

Council of Science Editors:

Raghavaraju VCRR. An analytical model for transconductance and drain conductance of silicon carbide MESFET. [Masters Thesis]. California State University – Northridge; 2015. Available from: http://hdl.handle.net/10211.3/133216


Virginia Tech

23. Khalaf, Yaser A. Systematic Optimization Technique for MESFET Modeling.

Degree: PhD, Electrical and Computer Engineering, 2000, Virginia Tech

 Accurate small and large-signal models of metal-semiconductor field effect transistor (MESFET) devices are essential in all modern microwave and millimeter wave applications. Those models are… (more)

Subjects/Keywords: Optimization; MESFET; semiconductor; Small-Signal model; Large-Signal model; Transistor; Modeling

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APA (6th Edition):

Khalaf, Y. A. (2000). Systematic Optimization Technique for MESFET Modeling. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/28515

Chicago Manual of Style (16th Edition):

Khalaf, Yaser A. “Systematic Optimization Technique for MESFET Modeling.” 2000. Doctoral Dissertation, Virginia Tech. Accessed May 26, 2019. http://hdl.handle.net/10919/28515.

MLA Handbook (7th Edition):

Khalaf, Yaser A. “Systematic Optimization Technique for MESFET Modeling.” 2000. Web. 26 May 2019.

Vancouver:

Khalaf YA. Systematic Optimization Technique for MESFET Modeling. [Internet] [Doctoral dissertation]. Virginia Tech; 2000. [cited 2019 May 26]. Available from: http://hdl.handle.net/10919/28515.

Council of Science Editors:

Khalaf YA. Systematic Optimization Technique for MESFET Modeling. [Doctoral Dissertation]. Virginia Tech; 2000. Available from: http://hdl.handle.net/10919/28515

24. Mantri svss, Raghu Vamshi. Analytical modeling of scaling the ion-implemented silicon carbide MESFET.

Degree: MS, Department of Electrical and Computer Engineering., 2013, California State University – Northridge

 In this project, we report scaling the analytical modeling of ion implanted silicon carbide MESFETs. The model has been developed to obtain the intrinsic parameters… (more)

Subjects/Keywords: MESFET; Dissertations, Academic  – CSUN  – Engineering  – Electrical and Computer Engineering.

…27 Figure 20: Structure of a MESFET with gate length, L, and channel thickness, a… …27 Figure 21: Device Structure of SiC MESFET ...28 Figure 22: Cross… …sectional view of a MESFET .29 Figure 23: Ion implanted SiC MESFET-Schematic… …SCALING THE ION- IMPLANTED SILICON CARBIDE MESFET By Raghu Vamshi Mantri SVSS Masters of Science… …silicon carbide MESFET technology using LOCOS isolation is reported. A MESFET 4Kx1 sRAM… 

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APA (6th Edition):

Mantri svss, R. V. (2013). Analytical modeling of scaling the ion-implemented silicon carbide MESFET. (Masters Thesis). California State University – Northridge. Retrieved from http://hdl.handle.net/10211.2/3298

Chicago Manual of Style (16th Edition):

Mantri svss, Raghu Vamshi. “Analytical modeling of scaling the ion-implemented silicon carbide MESFET.” 2013. Masters Thesis, California State University – Northridge. Accessed May 26, 2019. http://hdl.handle.net/10211.2/3298.

MLA Handbook (7th Edition):

Mantri svss, Raghu Vamshi. “Analytical modeling of scaling the ion-implemented silicon carbide MESFET.” 2013. Web. 26 May 2019.

Vancouver:

Mantri svss RV. Analytical modeling of scaling the ion-implemented silicon carbide MESFET. [Internet] [Masters thesis]. California State University – Northridge; 2013. [cited 2019 May 26]. Available from: http://hdl.handle.net/10211.2/3298.

Council of Science Editors:

Mantri svss RV. Analytical modeling of scaling the ion-implemented silicon carbide MESFET. [Masters Thesis]. California State University – Northridge; 2013. Available from: http://hdl.handle.net/10211.2/3298


Virginia Tech

25. Ward III, Allan. Residual Stress Effects on Power Slump and Wafer Breakage in GaAs MESFETs.

Degree: PhD, Materials Engineering Science, 1996, Virginia Tech

 The objectives of this investigation are to develop a precise, non-destructive single crystal stress measurement technique, develop a model to explain the phenomenon known as… (more)

Subjects/Keywords: x-ray diffraction; gallium arsenide; MESFET; wafer breakage; semiconductor device; stress

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APA (6th Edition):

Ward III, A. (1996). Residual Stress Effects on Power Slump and Wafer Breakage in GaAs MESFETs. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/30503

Chicago Manual of Style (16th Edition):

Ward III, Allan. “Residual Stress Effects on Power Slump and Wafer Breakage in GaAs MESFETs.” 1996. Doctoral Dissertation, Virginia Tech. Accessed May 26, 2019. http://hdl.handle.net/10919/30503.

MLA Handbook (7th Edition):

Ward III, Allan. “Residual Stress Effects on Power Slump and Wafer Breakage in GaAs MESFETs.” 1996. Web. 26 May 2019.

Vancouver:

Ward III A. Residual Stress Effects on Power Slump and Wafer Breakage in GaAs MESFETs. [Internet] [Doctoral dissertation]. Virginia Tech; 1996. [cited 2019 May 26]. Available from: http://hdl.handle.net/10919/30503.

Council of Science Editors:

Ward III A. Residual Stress Effects on Power Slump and Wafer Breakage in GaAs MESFETs. [Doctoral Dissertation]. Virginia Tech; 1996. Available from: http://hdl.handle.net/10919/30503


Rochester Institute of Technology

26. Mukherjee, Sankha. A physics-based model of SiC-based MESFETs.

Degree: Microelectronic Engineering, 2004, Rochester Institute of Technology

 Silicon Carbide (SiC) has been investigated as an alternative material to Silicon (Si) for enhancing the power-handling capability of semiconductor devices for simultaneous high-temperature and… (more)

Subjects/Keywords: Electrical engineering; Semiconductors; SiC MESFET; Thermal conductivity; Thesis; Trapping and detrapping

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APA (6th Edition):

Mukherjee, S. (2004). A physics-based model of SiC-based MESFETs. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/7282

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mukherjee, Sankha. “A physics-based model of SiC-based MESFETs.” 2004. Thesis, Rochester Institute of Technology. Accessed May 26, 2019. https://scholarworks.rit.edu/theses/7282.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mukherjee, Sankha. “A physics-based model of SiC-based MESFETs.” 2004. Web. 26 May 2019.

Vancouver:

Mukherjee S. A physics-based model of SiC-based MESFETs. [Internet] [Thesis]. Rochester Institute of Technology; 2004. [cited 2019 May 26]. Available from: https://scholarworks.rit.edu/theses/7282.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mukherjee S. A physics-based model of SiC-based MESFETs. [Thesis]. Rochester Institute of Technology; 2004. Available from: https://scholarworks.rit.edu/theses/7282

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

27. Balakrishnan, V R. Some Studies On Interface States In GaAs MESFET's & HJFET's.

Degree: 1997, Indian Institute of Science

Subjects/Keywords: Metal Semiconductor Field Effect (MESFET); Heterojunction Field Effect Transistor (HJFET); Gallium Arsenide Semiconductors; GaAs MESFET'S; Pseudomorphic HJFET'S; Electronic Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Balakrishnan, V. R. (1997). Some Studies On Interface States In GaAs MESFET's & HJFET's. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Balakrishnan, V R. “Some Studies On Interface States In GaAs MESFET's & HJFET's.” 1997. Thesis, Indian Institute of Science. Accessed May 26, 2019. http://hdl.handle.net/2005/2141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Balakrishnan, V R. “Some Studies On Interface States In GaAs MESFET's & HJFET's.” 1997. Web. 26 May 2019.

Vancouver:

Balakrishnan VR. Some Studies On Interface States In GaAs MESFET's & HJFET's. [Internet] [Thesis]. Indian Institute of Science; 1997. [cited 2019 May 26]. Available from: http://hdl.handle.net/2005/2141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Balakrishnan VR. Some Studies On Interface States In GaAs MESFET's & HJFET's. [Thesis]. Indian Institute of Science; 1997. Available from: http://hdl.handle.net/2005/2141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

28. Mareddy, Srikanth. AN ANALYTICAL MODEL TO STUDY SCALLING CAPABILITY OF DEEP SUB-MICRON DOUBLE GATE GALLIUM NITRIDE (gaN) MESFETS.

Degree: MS, Department of Elec & Comp Engr, 2015, California State University – Northridge

 A two dimensional (2-D) analytical model of a Gallium Nitride (GaN) Metal- semiconductor field effect transistor (MESFET) has been developed to present the submicron double… (more)

Subjects/Keywords: Electric field Potential MESFET Mobility Gallium Nitride; Dissertations, Academic  – CSUN  – Engineering  – Electrical and Computer Engineering.

…40 Figure 24: Structure of the 2- dimensional double gate MESFET… …44 Figure 25: Schematic for self-aligned GaN MESFET… …47 Figure 27: Structure of the 2- dimensional double gate MESFET… …Gallium Nitride (GaN) Metalsemiconductor field effect transistor (MESFET)… …short channel effects for deep submicron GaN-MESFET based low power applications. This model… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mareddy, S. (2015). AN ANALYTICAL MODEL TO STUDY SCALLING CAPABILITY OF DEEP SUB-MICRON DOUBLE GATE GALLIUM NITRIDE (gaN) MESFETS. (Masters Thesis). California State University – Northridge. Retrieved from http://hdl.handle.net/10211.3/144918

Chicago Manual of Style (16th Edition):

Mareddy, Srikanth. “AN ANALYTICAL MODEL TO STUDY SCALLING CAPABILITY OF DEEP SUB-MICRON DOUBLE GATE GALLIUM NITRIDE (gaN) MESFETS.” 2015. Masters Thesis, California State University – Northridge. Accessed May 26, 2019. http://hdl.handle.net/10211.3/144918.

MLA Handbook (7th Edition):

Mareddy, Srikanth. “AN ANALYTICAL MODEL TO STUDY SCALLING CAPABILITY OF DEEP SUB-MICRON DOUBLE GATE GALLIUM NITRIDE (gaN) MESFETS.” 2015. Web. 26 May 2019.

Vancouver:

Mareddy S. AN ANALYTICAL MODEL TO STUDY SCALLING CAPABILITY OF DEEP SUB-MICRON DOUBLE GATE GALLIUM NITRIDE (gaN) MESFETS. [Internet] [Masters thesis]. California State University – Northridge; 2015. [cited 2019 May 26]. Available from: http://hdl.handle.net/10211.3/144918.

Council of Science Editors:

Mareddy S. AN ANALYTICAL MODEL TO STUDY SCALLING CAPABILITY OF DEEP SUB-MICRON DOUBLE GATE GALLIUM NITRIDE (gaN) MESFETS. [Masters Thesis]. California State University – Northridge; 2015. Available from: http://hdl.handle.net/10211.3/144918


Indian Institute of Science

29. Balakrishnan, V R. Some Studies On Interface States In GaAs MESFET's & HJFET's.

Degree: 1997, Indian Institute of Science

Subjects/Keywords: Metal Semiconductor Field Effect (MESFET); Heterojunction Field Effect Transistor (HJFET); Gallium Arsenide Semiconductors; GaAs MESFET'S; Pseudomorphic HJFET'S; Electronic Engineering

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Balakrishnan, V. R. (1997). Some Studies On Interface States In GaAs MESFET's & HJFET's. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/handle/2005/2141 ; http://etd.ncsi.iisc.ernet.in/abstracts/2747/G15018-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Balakrishnan, V R. “Some Studies On Interface States In GaAs MESFET's & HJFET's.” 1997. Thesis, Indian Institute of Science. Accessed May 26, 2019. http://etd.iisc.ernet.in/handle/2005/2141 ; http://etd.ncsi.iisc.ernet.in/abstracts/2747/G15018-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Balakrishnan, V R. “Some Studies On Interface States In GaAs MESFET's & HJFET's.” 1997. Web. 26 May 2019.

Vancouver:

Balakrishnan VR. Some Studies On Interface States In GaAs MESFET's & HJFET's. [Internet] [Thesis]. Indian Institute of Science; 1997. [cited 2019 May 26]. Available from: http://etd.iisc.ernet.in/handle/2005/2141 ; http://etd.ncsi.iisc.ernet.in/abstracts/2747/G15018-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Balakrishnan VR. Some Studies On Interface States In GaAs MESFET's & HJFET's. [Thesis]. Indian Institute of Science; 1997. Available from: http://etd.iisc.ernet.in/handle/2005/2141 ; http://etd.ncsi.iisc.ernet.in/abstracts/2747/G15018-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

30. Tongay, Sefaattin. Graphite-Graphene Semiconductor Junctions and Magneto-Dielectric Coupling in Schottky Diodes.

Degree: PhD, Physics, 2010, University of Florida

 The goal of this dissertation is to incorporate graphite and graphene into today's semiconductor technology as a Schottky barrier diodes (metal / semiconductor junctions) that… (more)

Subjects/Keywords: Atoms; Bromine; Carbon; Electrical resistivity; Electrons; Graphene; Graphite; Room temperature; Semiconductors; Temperature dependence; carbon, condensed, device, electronic, gallium, gan, graphene, graphite, hemts, hightemperature, intercalation, magnetization, magnetodielectric, mesfet, mosfet, optical, quantum, schottky, semiconductors, silicon

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tongay, S. (2010). Graphite-Graphene Semiconductor Junctions and Magneto-Dielectric Coupling in Schottky Diodes. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0041457

Chicago Manual of Style (16th Edition):

Tongay, Sefaattin. “Graphite-Graphene Semiconductor Junctions and Magneto-Dielectric Coupling in Schottky Diodes.” 2010. Doctoral Dissertation, University of Florida. Accessed May 26, 2019. http://ufdc.ufl.edu/UFE0041457.

MLA Handbook (7th Edition):

Tongay, Sefaattin. “Graphite-Graphene Semiconductor Junctions and Magneto-Dielectric Coupling in Schottky Diodes.” 2010. Web. 26 May 2019.

Vancouver:

Tongay S. Graphite-Graphene Semiconductor Junctions and Magneto-Dielectric Coupling in Schottky Diodes. [Internet] [Doctoral dissertation]. University of Florida; 2010. [cited 2019 May 26]. Available from: http://ufdc.ufl.edu/UFE0041457.

Council of Science Editors:

Tongay S. Graphite-Graphene Semiconductor Junctions and Magneto-Dielectric Coupling in Schottky Diodes. [Doctoral Dissertation]. University of Florida; 2010. Available from: http://ufdc.ufl.edu/UFE0041457

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