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You searched for subject:(MBE). Showing records 1 – 30 of 253 total matches.

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NSYSU

1. Hsieh, Chia-Ho. The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy.

Degree: PhD, Materials and Optoelectronic Science, 2009, NSYSU

 The group III nitride semiconductor grown on c-plane sapphire by radio frequency plasma assisted molecular beam epitaxy has been studied. To archive good quality GaN… (more)

Subjects/Keywords: MBE; GaN; LiAlO2

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APA (6th Edition):

Hsieh, C. (2009). The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237

Chicago Manual of Style (16th Edition):

Hsieh, Chia-Ho. “The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy.” 2009. Doctoral Dissertation, NSYSU. Accessed August 07, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237.

MLA Handbook (7th Edition):

Hsieh, Chia-Ho. “The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy.” 2009. Web. 07 Aug 2020.

Vancouver:

Hsieh C. The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy. [Internet] [Doctoral dissertation]. NSYSU; 2009. [cited 2020 Aug 07]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237.

Council of Science Editors:

Hsieh C. The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy. [Doctoral Dissertation]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237


NSYSU

2. Wu, Hao-Fei. Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE.

Degree: Master, Physics, 2011, NSYSU

 We invistegated the characteristic of GaN grown on LiAlO2 substrate by molecular epitaxy beam. First of all , we try to changed the growth ratio… (more)

Subjects/Keywords: MBE; LiAlO2; GaN

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APA (6th Edition):

Wu, H. (2011). Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Hao-Fei. “Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE.” 2011. Thesis, NSYSU. Accessed August 07, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Hao-Fei. “Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE.” 2011. Web. 07 Aug 2020.

Vancouver:

Wu H. Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE. [Internet] [Thesis]. NSYSU; 2011. [cited 2020 Aug 07]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu H. Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

3. Satyaki Ganguly. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.

Degree: Electrical Engineering, 2014, University of Notre Dame

  Owing to the large band gap (EgGaN=3.4eV) and high electron saturation velocity, GaN based high electron mobility transistors (HEMTs) are attractive for high voltage… (more)

Subjects/Keywords: III-Nitrides; MBE

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APA (6th Edition):

Ganguly, S. (2014). High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/0c483j34v8f

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ganguly, Satyaki. “High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.” 2014. Thesis, University of Notre Dame. Accessed August 07, 2020. https://curate.nd.edu/show/0c483j34v8f.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ganguly, Satyaki. “High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.” 2014. Web. 07 Aug 2020.

Vancouver:

Ganguly S. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. [Internet] [Thesis]. University of Notre Dame; 2014. [cited 2020 Aug 07]. Available from: https://curate.nd.edu/show/0c483j34v8f.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ganguly S. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. [Thesis]. University of Notre Dame; 2014. Available from: https://curate.nd.edu/show/0c483j34v8f

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

4. Liu, Chih-Hui. The study of optical-electric properties CuInSe2 doping Ge.

Degree: Master, Materials Science and Engineering, 2000, NSYSU

 CuInSe2 chalcopyrie compound was grown heteroepitaxially on (001)GaAs substrate by molecular beam epitaxy system. Single-crystalline chalcopyrite films can be obtained by the control of substrate… (more)

Subjects/Keywords: CuInSe2; MBE

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APA (6th Edition):

Liu, C. (2000). The study of optical-electric properties CuInSe2 doping Ge. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1124100-192312

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Chih-Hui. “The study of optical-electric properties CuInSe2 doping Ge.” 2000. Thesis, NSYSU. Accessed August 07, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1124100-192312.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Chih-Hui. “The study of optical-electric properties CuInSe2 doping Ge.” 2000. Web. 07 Aug 2020.

Vancouver:

Liu C. The study of optical-electric properties CuInSe2 doping Ge. [Internet] [Thesis]. NSYSU; 2000. [cited 2020 Aug 07]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1124100-192312.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu C. The study of optical-electric properties CuInSe2 doping Ge. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1124100-192312

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

5. Chen, Yu-hao. Analysis of Mg-doped GaN thin film grown by PAMBE.

Degree: Master, Physics, 2010, NSYSU

 We grew Mg-doped of GaN on GaN template by plasma-assisted molecular beam epitaxy (PAMBE) and measured these samples by Hall measurement, I-V curve measurement, PL,… (more)

Subjects/Keywords: Mg-doped; MBE; GaN

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APA (6th Edition):

Chen, Y. (2010). Analysis of Mg-doped GaN thin film grown by PAMBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yu-hao. “Analysis of Mg-doped GaN thin film grown by PAMBE.” 2010. Thesis, NSYSU. Accessed August 07, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yu-hao. “Analysis of Mg-doped GaN thin film grown by PAMBE.” 2010. Web. 07 Aug 2020.

Vancouver:

Chen Y. Analysis of Mg-doped GaN thin film grown by PAMBE. [Internet] [Thesis]. NSYSU; 2010. [cited 2020 Aug 07]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Analysis of Mg-doped GaN thin film grown by PAMBE. [Thesis]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

6. Chen, Zong-Ting. Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE.

Degree: Master, Physics, 2013, NSYSU

 We have grown InGaN/GaN quantum wells (QWs) by plasma-assisted molecular beam epitaxy(PA MBE) for the application light-emitting diodes (LEDs). In order to evaluate the optical… (more)

Subjects/Keywords: Qantum well; GaN; InGaN; MBE

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APA (6th Edition):

Chen, Z. (2013). Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Zong-Ting. “Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE.” 2013. Thesis, NSYSU. Accessed August 07, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Zong-Ting. “Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE.” 2013. Web. 07 Aug 2020.

Vancouver:

Chen Z. Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE. [Internet] [Thesis]. NSYSU; 2013. [cited 2020 Aug 07]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Z. Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

7. Tseng, Chun-Lung. Epitaxial Growth of Mg-doped ZnO by Molecular Beam Epitaxy.

Degree: Master, Materials and Optoelectronic Science, 2011, NSYSU

 The present study aims at studying the surface morphology, crystallinity and optical emission property of Mg added ZnO grown by molecular beam epitaxy. Zn1-xMgxO epitaxial… (more)

Subjects/Keywords: annealing; LAO; Al2O3; ZnMgO; MBE

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APA (6th Edition):

Tseng, C. (2011). Epitaxial Growth of Mg-doped ZnO by Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1128111-165718

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tseng, Chun-Lung. “Epitaxial Growth of Mg-doped ZnO by Molecular Beam Epitaxy.” 2011. Thesis, NSYSU. Accessed August 07, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1128111-165718.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tseng, Chun-Lung. “Epitaxial Growth of Mg-doped ZnO by Molecular Beam Epitaxy.” 2011. Web. 07 Aug 2020.

Vancouver:

Tseng C. Epitaxial Growth of Mg-doped ZnO by Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2011. [cited 2020 Aug 07]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1128111-165718.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tseng C. Epitaxial Growth of Mg-doped ZnO by Molecular Beam Epitaxy. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1128111-165718

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Texas State University – San Marcos

8. Arava, Hanu K. Integration of Functional Oxides onto Silicon Substrates.

Degree: MS, Materials Physics, 2014, Texas State University – San Marcos

 The purpose of this thesis is to investigate the integration of functional oxides onto silicon substrates using MBE and Spin-Coating techniques. Functionality is defined, by… (more)

Subjects/Keywords: Oxides; MBE; Spin Coating

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APA (6th Edition):

Arava, H. K. (2014). Integration of Functional Oxides onto Silicon Substrates. (Masters Thesis). Texas State University – San Marcos. Retrieved from https://digital.library.txstate.edu/handle/10877/6374

Chicago Manual of Style (16th Edition):

Arava, Hanu K. “Integration of Functional Oxides onto Silicon Substrates.” 2014. Masters Thesis, Texas State University – San Marcos. Accessed August 07, 2020. https://digital.library.txstate.edu/handle/10877/6374.

MLA Handbook (7th Edition):

Arava, Hanu K. “Integration of Functional Oxides onto Silicon Substrates.” 2014. Web. 07 Aug 2020.

Vancouver:

Arava HK. Integration of Functional Oxides onto Silicon Substrates. [Internet] [Masters thesis]. Texas State University – San Marcos; 2014. [cited 2020 Aug 07]. Available from: https://digital.library.txstate.edu/handle/10877/6374.

Council of Science Editors:

Arava HK. Integration of Functional Oxides onto Silicon Substrates. [Masters Thesis]. Texas State University – San Marcos; 2014. Available from: https://digital.library.txstate.edu/handle/10877/6374


University of Notre Dame

9. Kasra Pourang. Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>.

Degree: Electrical Engineering, 2015, University of Notre Dame

  In this work, we present the heteroepitaxial and homoepitaxial growth and characterization of single crystal Ga2O3 by plasma-assisted molecular beam epitaxy (MBE). For growth,… (more)

Subjects/Keywords: Plasma MBE; Gallium oxide

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APA (6th Edition):

Pourang, K. (2015). Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/bn999595w4d

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pourang, Kasra. “Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>.” 2015. Thesis, University of Notre Dame. Accessed August 07, 2020. https://curate.nd.edu/show/bn999595w4d.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pourang, Kasra. “Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>.” 2015. Web. 07 Aug 2020.

Vancouver:

Pourang K. Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>. [Internet] [Thesis]. University of Notre Dame; 2015. [cited 2020 Aug 07]. Available from: https://curate.nd.edu/show/bn999595w4d.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pourang K. Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>. [Thesis]. University of Notre Dame; 2015. Available from: https://curate.nd.edu/show/bn999595w4d

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

10. Guowang Li. Nitride Channels on Aluminum Nitride: Materials and Devices</h1>.

Degree: Electrical Engineering, 2015, University of Notre Dame

  III-nitride electronic devices have made significant progress in high frequency and high power applications in the past decade. In this work, nitride heterostructures with… (more)

Subjects/Keywords: GaN; AlN; FET; MBE

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APA (6th Edition):

Li, G. (2015). Nitride Channels on Aluminum Nitride: Materials and Devices</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/z029p269t5c

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Guowang. “Nitride Channels on Aluminum Nitride: Materials and Devices</h1>.” 2015. Thesis, University of Notre Dame. Accessed August 07, 2020. https://curate.nd.edu/show/z029p269t5c.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Guowang. “Nitride Channels on Aluminum Nitride: Materials and Devices</h1>.” 2015. Web. 07 Aug 2020.

Vancouver:

Li G. Nitride Channels on Aluminum Nitride: Materials and Devices</h1>. [Internet] [Thesis]. University of Notre Dame; 2015. [cited 2020 Aug 07]. Available from: https://curate.nd.edu/show/z029p269t5c.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li G. Nitride Channels on Aluminum Nitride: Materials and Devices</h1>. [Thesis]. University of Notre Dame; 2015. Available from: https://curate.nd.edu/show/z029p269t5c

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Duke University

11. Jiao, Wenyuan. Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy .

Degree: 2015, Duke University

  InAlN thin films and InAlN/GaN heterostructures have been intensively studied over recent years due to their applications in a variety of devices, including high… (more)

Subjects/Keywords: Electrical engineering; HEMT; InAlN; MBE

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APA (6th Edition):

Jiao, W. (2015). Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy . (Thesis). Duke University. Retrieved from http://hdl.handle.net/10161/11323

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jiao, Wenyuan. “Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy .” 2015. Thesis, Duke University. Accessed August 07, 2020. http://hdl.handle.net/10161/11323.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jiao, Wenyuan. “Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy .” 2015. Web. 07 Aug 2020.

Vancouver:

Jiao W. Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy . [Internet] [Thesis]. Duke University; 2015. [cited 2020 Aug 07]. Available from: http://hdl.handle.net/10161/11323.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jiao W. Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy . [Thesis]. Duke University; 2015. Available from: http://hdl.handle.net/10161/11323

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

12. Maia, Álvaro Diego Bernardino. Efeitos de spin em poços quânticos largos.

Degree: Mestrado, Física, 2007, University of São Paulo

Este trabalho apresenta o resultado de investigações sobre efeitos de spin em amostras de poços quânticos simples e duplos de AlGaAs, crescidos em substratos de… (more)

Subjects/Keywords: G factor; GaAs; MBE; MBE; Poços Quânticos; Quantum Well; Semiconductor; Semicondutores

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APA (6th Edition):

Maia, . D. B. (2007). Efeitos de spin em poços quânticos largos. (Masters Thesis). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/43/43134/tde-25082009-080807/ ;

Chicago Manual of Style (16th Edition):

Maia, Álvaro Diego Bernardino. “Efeitos de spin em poços quânticos largos.” 2007. Masters Thesis, University of São Paulo. Accessed August 07, 2020. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-25082009-080807/ ;.

MLA Handbook (7th Edition):

Maia, Álvaro Diego Bernardino. “Efeitos de spin em poços quânticos largos.” 2007. Web. 07 Aug 2020.

Vancouver:

Maia DB. Efeitos de spin em poços quânticos largos. [Internet] [Masters thesis]. University of São Paulo; 2007. [cited 2020 Aug 07]. Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-25082009-080807/ ;.

Council of Science Editors:

Maia DB. Efeitos de spin em poços quânticos largos. [Masters Thesis]. University of São Paulo; 2007. Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-25082009-080807/ ;


Penn State University

13. Lee, Che-hui. MBE Growth and Properties of Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper Phases.

Degree: PhD, Materials Science and Engineering, 2012, Penn State University

 In this work epitaxial films of the Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper homologous series with n = 1, 2, 3, 4, 5, 6, 10 and ∞ were grown… (more)

Subjects/Keywords: MBE; oxide; Ruddlesden-Popper; strain; tunable dielectrics

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APA (6th Edition):

Lee, C. (2012). MBE Growth and Properties of Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper Phases. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/16244

Chicago Manual of Style (16th Edition):

Lee, Che-hui. “MBE Growth and Properties of Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper Phases.” 2012. Doctoral Dissertation, Penn State University. Accessed August 07, 2020. https://etda.libraries.psu.edu/catalog/16244.

MLA Handbook (7th Edition):

Lee, Che-hui. “MBE Growth and Properties of Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper Phases.” 2012. Web. 07 Aug 2020.

Vancouver:

Lee C. MBE Growth and Properties of Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper Phases. [Internet] [Doctoral dissertation]. Penn State University; 2012. [cited 2020 Aug 07]. Available from: https://etda.libraries.psu.edu/catalog/16244.

Council of Science Editors:

Lee C. MBE Growth and Properties of Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper Phases. [Doctoral Dissertation]. Penn State University; 2012. Available from: https://etda.libraries.psu.edu/catalog/16244


University of California – Riverside

14. ZUO, ZHENG. Transition Metal Doped ZnO as Diluted Magnetic Semiconductor.

Degree: Electrical Engineering, 2013, University of California – Riverside

 Transition metal doped ZnO has been proposed to be a Diluted Magnetic Semiconductor with room temperature ferromagnetism. High quality Mn doped ZnO was grown on… (more)

Subjects/Keywords: Electrical engineering; Ag; DMS; MBE; Mn; ZnO

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APA (6th Edition):

ZUO, Z. (2013). Transition Metal Doped ZnO as Diluted Magnetic Semiconductor. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/3s31902x

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

ZUO, ZHENG. “Transition Metal Doped ZnO as Diluted Magnetic Semiconductor.” 2013. Thesis, University of California – Riverside. Accessed August 07, 2020. http://www.escholarship.org/uc/item/3s31902x.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

ZUO, ZHENG. “Transition Metal Doped ZnO as Diluted Magnetic Semiconductor.” 2013. Web. 07 Aug 2020.

Vancouver:

ZUO Z. Transition Metal Doped ZnO as Diluted Magnetic Semiconductor. [Internet] [Thesis]. University of California – Riverside; 2013. [cited 2020 Aug 07]. Available from: http://www.escholarship.org/uc/item/3s31902x.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

ZUO Z. Transition Metal Doped ZnO as Diluted Magnetic Semiconductor. [Thesis]. University of California – Riverside; 2013. Available from: http://www.escholarship.org/uc/item/3s31902x

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

15. Chen, Yen-Liang. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.

Degree: PhD, Physics, 2010, NSYSU

 The quality of GaN template layer plays a very important role in high electron mobility transistors. We proposed a special method in the growth of… (more)

Subjects/Keywords: nano wire; high mobility; MBE; GaN; AlGaN

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APA (6th Edition):

Chen, Y. (2010). The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827

Chicago Manual of Style (16th Edition):

Chen, Yen-Liang. “The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.” 2010. Doctoral Dissertation, NSYSU. Accessed August 07, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827.

MLA Handbook (7th Edition):

Chen, Yen-Liang. “The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.” 2010. Web. 07 Aug 2020.

Vancouver:

Chen Y. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. [Internet] [Doctoral dissertation]. NSYSU; 2010. [cited 2020 Aug 07]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827.

Council of Science Editors:

Chen Y. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. [Doctoral Dissertation]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827


NSYSU

16. Pang, Wen-Yuan. Characterization of GaN grown on LiAlO2 by molecular epitaxy beam.

Degree: Master, Physics, 2007, NSYSU

 We invistegated the characteristic of GaN grown on LiAlO2 substrate by molecular epitaxy beam. We observed the c-plane GaN crystalls assembled at the step-edge of… (more)

Subjects/Keywords: GaN; LiAlO2; MBE

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APA (6th Edition):

Pang, W. (2007). Characterization of GaN grown on LiAlO2 by molecular epitaxy beam. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pang, Wen-Yuan. “Characterization of GaN grown on LiAlO2 by molecular epitaxy beam.” 2007. Thesis, NSYSU. Accessed August 07, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pang, Wen-Yuan. “Characterization of GaN grown on LiAlO2 by molecular epitaxy beam.” 2007. Web. 07 Aug 2020.

Vancouver:

Pang W. Characterization of GaN grown on LiAlO2 by molecular epitaxy beam. [Internet] [Thesis]. NSYSU; 2007. [cited 2020 Aug 07]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pang W. Characterization of GaN grown on LiAlO2 by molecular epitaxy beam. [Thesis]. NSYSU; 2007. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

17. Chang, Yao-i. Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy.

Degree: Master, Physics, 2007, NSYSU

 We mainly studied the morphology of GaN structures which were grown by plasma-assisted molecular beam epitaxy. The only condition we changed is Ga/N Ratio. Based… (more)

Subjects/Keywords: GaN; SEM; MBE

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APA (6th Edition):

Chang, Y. (2007). Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-014858

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Yao-i. “Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy.” 2007. Thesis, NSYSU. Accessed August 07, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-014858.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Yao-i. “Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy.” 2007. Web. 07 Aug 2020.

Vancouver:

Chang Y. Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy. [Internet] [Thesis]. NSYSU; 2007. [cited 2020 Aug 07]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-014858.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang Y. Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy. [Thesis]. NSYSU; 2007. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-014858

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

18. Gau, Ming-Horng. Growth and characterization of AlGaN/GaN heterostructures.

Degree: Master, Physics, 2004, NSYSU

 We will discuss the growth and characterization of AlxGa1-xN/GaN on sapphire substrate by plasma-assisted molecular beam epitaxy. By performing the X-ray diffraction (XRD) of our… (more)

Subjects/Keywords: GaN; MBE; AlGaN

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APA (6th Edition):

Gau, M. (2004). Growth and characterization of AlGaN/GaN heterostructures. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gau, Ming-Horng. “Growth and characterization of AlGaN/GaN heterostructures.” 2004. Thesis, NSYSU. Accessed August 07, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gau, Ming-Horng. “Growth and characterization of AlGaN/GaN heterostructures.” 2004. Web. 07 Aug 2020.

Vancouver:

Gau M. Growth and characterization of AlGaN/GaN heterostructures. [Internet] [Thesis]. NSYSU; 2004. [cited 2020 Aug 07]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gau M. Growth and characterization of AlGaN/GaN heterostructures. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

19. Fan, Ni-wan. Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD.

Degree: PhD, Physics, 2004, NSYSU

 We discuss the PL spectra of the InN band gap. The InN thin film epitaxy grows on both Si (111) and sapphire (0001) by the… (more)

Subjects/Keywords: InN; PA-MBE

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APA (6th Edition):

Fan, N. (2004). Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803

Chicago Manual of Style (16th Edition):

Fan, Ni-wan. “Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD.” 2004. Doctoral Dissertation, NSYSU. Accessed August 07, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803.

MLA Handbook (7th Edition):

Fan, Ni-wan. “Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD.” 2004. Web. 07 Aug 2020.

Vancouver:

Fan N. Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD. [Internet] [Doctoral dissertation]. NSYSU; 2004. [cited 2020 Aug 07]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803.

Council of Science Editors:

Fan N. Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD. [Doctoral Dissertation]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803


NSYSU

20. Chen, Ting-Hong. Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy.

Degree: Master, Physics, 2012, NSYSU

 In this work, Mn atoms are doped into GaN nanorods by two doping types, homogeneous and delta doping, and GaN nanorods are grown on Si… (more)

Subjects/Keywords: MBE; GaN; Nanocolumn; DMS; Nanorod; GaMnN

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APA (6th Edition):

Chen, T. (2012). Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-182742

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Ting-Hong. “Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy.” 2012. Thesis, NSYSU. Accessed August 07, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-182742.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Ting-Hong. “Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy.” 2012. Web. 07 Aug 2020.

Vancouver:

Chen T. Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2012. [cited 2020 Aug 07]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-182742.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen T. Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-182742

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

21. Noskin, Lindsey Erin. Study of the Metal-Insulator Transition in LaCoO<sub>3-<i>x</i></sub> Epitaxial Films .

Degree: 2018, Cornell University

 Materials with temperature-dependent metal-to-insulator transitions (MIT) have gained attention for the abrupt collapse of the band gap during the transition. Various novel transistor structures which… (more)

Subjects/Keywords: perovskite; Materials Science; expitaxy; MBE; MIT; transition

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APA (6th Edition):

Noskin, L. E. (2018). Study of the Metal-Insulator Transition in LaCoO<sub>3-<i>x</i></sub> Epitaxial Films . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/59501

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Noskin, Lindsey Erin. “Study of the Metal-Insulator Transition in LaCoO<sub>3-<i>x</i></sub> Epitaxial Films .” 2018. Thesis, Cornell University. Accessed August 07, 2020. http://hdl.handle.net/1813/59501.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Noskin, Lindsey Erin. “Study of the Metal-Insulator Transition in LaCoO<sub>3-<i>x</i></sub> Epitaxial Films .” 2018. Web. 07 Aug 2020.

Vancouver:

Noskin LE. Study of the Metal-Insulator Transition in LaCoO<sub>3-<i>x</i></sub> Epitaxial Films . [Internet] [Thesis]. Cornell University; 2018. [cited 2020 Aug 07]. Available from: http://hdl.handle.net/1813/59501.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Noskin LE. Study of the Metal-Insulator Transition in LaCoO<sub>3-<i>x</i></sub> Epitaxial Films . [Thesis]. Cornell University; 2018. Available from: http://hdl.handle.net/1813/59501

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Texas – Austin

22. -3896-349X. Transition metal dichalcogenide MoSe2 nanostructures: Transition metal dichalcogenide MoSe₂ nanostructures.

Degree: PhD, Physics, 2016, University of Texas – Austin

 Transition metal dichalcogenides (TMDs) are a family of van der Waals (vdW) layered materials exhibiting unique electronic, optical, magnetic, and transport properties. Their technological potentials… (more)

Subjects/Keywords: Transition metal dichalcogenides; MBE; Nanostructures; 2D electronics

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APA (6th Edition):

-3896-349X. (2016). Transition metal dichalcogenide MoSe2 nanostructures: Transition metal dichalcogenide MoSe₂ nanostructures. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/1325

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-3896-349X. “Transition metal dichalcogenide MoSe2 nanostructures: Transition metal dichalcogenide MoSe₂ nanostructures.” 2016. Doctoral Dissertation, University of Texas – Austin. Accessed August 07, 2020. http://dx.doi.org/10.26153/tsw/1325.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-3896-349X. “Transition metal dichalcogenide MoSe2 nanostructures: Transition metal dichalcogenide MoSe₂ nanostructures.” 2016. Web. 07 Aug 2020.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-3896-349X. Transition metal dichalcogenide MoSe2 nanostructures: Transition metal dichalcogenide MoSe₂ nanostructures. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2016. [cited 2020 Aug 07]. Available from: http://dx.doi.org/10.26153/tsw/1325.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-3896-349X. Transition metal dichalcogenide MoSe2 nanostructures: Transition metal dichalcogenide MoSe₂ nanostructures. [Doctoral Dissertation]. University of Texas – Austin; 2016. Available from: http://dx.doi.org/10.26153/tsw/1325

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Iowa

23. Murray, Lee Michael. Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices.

Degree: PhD, Physics, 2012, University of Iowa

  InAs/GaSb superlattices are a material system well suited to growth via molecular beam epitaxy. The ability to tune the band gap over the entire… (more)

Subjects/Keywords: Epitaxy; GaSb; InAs/GaSb; MBE; Superlattice; Physics

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APA (6th Edition):

Murray, L. M. (2012). Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices. (Doctoral Dissertation). University of Iowa. Retrieved from https://ir.uiowa.edu/etd/5029

Chicago Manual of Style (16th Edition):

Murray, Lee Michael. “Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices.” 2012. Doctoral Dissertation, University of Iowa. Accessed August 07, 2020. https://ir.uiowa.edu/etd/5029.

MLA Handbook (7th Edition):

Murray, Lee Michael. “Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices.” 2012. Web. 07 Aug 2020.

Vancouver:

Murray LM. Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices. [Internet] [Doctoral dissertation]. University of Iowa; 2012. [cited 2020 Aug 07]. Available from: https://ir.uiowa.edu/etd/5029.

Council of Science Editors:

Murray LM. Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices. [Doctoral Dissertation]. University of Iowa; 2012. Available from: https://ir.uiowa.edu/etd/5029


University of Notre Dame

24. Yu Cao. Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions</h1>.

Degree: Electrical Engineering, 2007, University of Notre Dame

  The large polarization difference between AlN and GaN provides extremely high electron densities at the interface of AlN/GaN heterojunctions. In this work the growths… (more)

Subjects/Keywords: MBE; Herterojunction; AlN

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APA (6th Edition):

Cao, Y. (2007). Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/th83kw5520m

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cao, Yu. “Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions</h1>.” 2007. Thesis, University of Notre Dame. Accessed August 07, 2020. https://curate.nd.edu/show/th83kw5520m.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cao, Yu. “Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions</h1>.” 2007. Web. 07 Aug 2020.

Vancouver:

Cao Y. Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions</h1>. [Internet] [Thesis]. University of Notre Dame; 2007. [cited 2020 Aug 07]. Available from: https://curate.nd.edu/show/th83kw5520m.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cao Y. Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions</h1>. [Thesis]. University of Notre Dame; 2007. Available from: https://curate.nd.edu/show/th83kw5520m

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

25. Kevin Goodman. Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>.

Degree: Electrical Engineering, 2010, University of Notre Dame

  Currently, 21% of the world’s electrical energy is used in artificial lighting. White light LEDs, the holy grail of lighting, are currently the subject(more)

Subjects/Keywords: mbe; nitride; nanowires

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APA (6th Edition):

Goodman, K. (2010). Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/wh246q20m66

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Goodman, Kevin. “Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>.” 2010. Thesis, University of Notre Dame. Accessed August 07, 2020. https://curate.nd.edu/show/wh246q20m66.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Goodman, Kevin. “Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>.” 2010. Web. 07 Aug 2020.

Vancouver:

Goodman K. Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>. [Internet] [Thesis]. University of Notre Dame; 2010. [cited 2020 Aug 07]. Available from: https://curate.nd.edu/show/wh246q20m66.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Goodman K. Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>. [Thesis]. University of Notre Dame; 2010. Available from: https://curate.nd.edu/show/wh246q20m66

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

26. Guowang Li. MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>.

Degree: Electrical Engineering, 2010, University of Notre Dame

  III-V nitride semiconductors have exhibited a promising technology platform for optoelectronic and electronic devices. For low Al composition (<40 %) AlGaN/GaN high-electron mobility transistors… (more)

Subjects/Keywords: GaN; MBE; Transistor

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APA (6th Edition):

Li, G. (2010). MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/7w62f76443f

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Guowang. “MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>.” 2010. Thesis, University of Notre Dame. Accessed August 07, 2020. https://curate.nd.edu/show/7w62f76443f.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Guowang. “MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>.” 2010. Web. 07 Aug 2020.

Vancouver:

Li G. MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>. [Internet] [Thesis]. University of Notre Dame; 2010. [cited 2020 Aug 07]. Available from: https://curate.nd.edu/show/7w62f76443f.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li G. MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>. [Thesis]. University of Notre Dame; 2010. Available from: https://curate.nd.edu/show/7w62f76443f

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

27. Horáček, Matěj. Návrh atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách UHV: Design of the atomic source producing carbon beams for deposition of graphene in UHV conditions.

Degree: 2019, Brno University of Technology

 This bachelor's thesis deals with the design of the atomic source of carbon beams for deposition of graphene in UHV conditions. In the first part,… (more)

Subjects/Keywords: ATOMÁRNÍ ZDROJ; TERMÁLNÍ SVAZKY ATOMŮ UHLÍKU; GRAFEN; MBE; RŮST ULTRATENKÝCH VRSTEV; UHV; C-MBE; ATOMIC SOURCE; THERMAL ATOMIC CARBON BEAMS; GRAPHENE; MBE; GROWTH OF ULTRATHIN LAYERS; UHV; C-MBE

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APA (6th Edition):

Horáček, M. (2019). Návrh atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách UHV: Design of the atomic source producing carbon beams for deposition of graphene in UHV conditions. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/27964

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Horáček, Matěj. “Návrh atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách UHV: Design of the atomic source producing carbon beams for deposition of graphene in UHV conditions.” 2019. Thesis, Brno University of Technology. Accessed August 07, 2020. http://hdl.handle.net/11012/27964.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Horáček, Matěj. “Návrh atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách UHV: Design of the atomic source producing carbon beams for deposition of graphene in UHV conditions.” 2019. Web. 07 Aug 2020.

Vancouver:

Horáček M. Návrh atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách UHV: Design of the atomic source producing carbon beams for deposition of graphene in UHV conditions. [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2020 Aug 07]. Available from: http://hdl.handle.net/11012/27964.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Horáček M. Návrh atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách UHV: Design of the atomic source producing carbon beams for deposition of graphene in UHV conditions. [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/27964

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

28. Larrison, Abigail. Mind, Brain and Education as a Framework for Curricular Reform .

Degree: 2013, California State University – San Marcos

 A growing collaboration between psychologists, neuroscientists, and educators has culminated in the emergence of a new academic discipline known as Mind, Brain and Education (MBE).… (more)

Subjects/Keywords: Mind, Brain and Education; MBE; neuropedagogy; neuroeducation

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APA (6th Edition):

Larrison, A. (2013). Mind, Brain and Education as a Framework for Curricular Reform . (Thesis). California State University – San Marcos. Retrieved from http://hdl.handle.net/10211.8/305

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Larrison, Abigail. “Mind, Brain and Education as a Framework for Curricular Reform .” 2013. Thesis, California State University – San Marcos. Accessed August 07, 2020. http://hdl.handle.net/10211.8/305.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Larrison, Abigail. “Mind, Brain and Education as a Framework for Curricular Reform .” 2013. Web. 07 Aug 2020.

Vancouver:

Larrison A. Mind, Brain and Education as a Framework for Curricular Reform . [Internet] [Thesis]. California State University – San Marcos; 2013. [cited 2020 Aug 07]. Available from: http://hdl.handle.net/10211.8/305.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Larrison A. Mind, Brain and Education as a Framework for Curricular Reform . [Thesis]. California State University – San Marcos; 2013. Available from: http://hdl.handle.net/10211.8/305

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arizona

29. Sears, Jasmine Soria. Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures .

Degree: 2017, University of Arizona

 The fields of telecommunications and optoelectronics are under constant pressure to shrink devices and reduce power consumption. Micro-scale photonic and plasmonic structures can trap light… (more)

Subjects/Keywords: III-V; MBE; Microstructure; Photonic; Plasmonic; Silicon

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APA (6th Edition):

Sears, J. S. (2017). Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/625672

Chicago Manual of Style (16th Edition):

Sears, Jasmine Soria. “Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures .” 2017. Doctoral Dissertation, University of Arizona. Accessed August 07, 2020. http://hdl.handle.net/10150/625672.

MLA Handbook (7th Edition):

Sears, Jasmine Soria. “Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures .” 2017. Web. 07 Aug 2020.

Vancouver:

Sears JS. Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures . [Internet] [Doctoral dissertation]. University of Arizona; 2017. [cited 2020 Aug 07]. Available from: http://hdl.handle.net/10150/625672.

Council of Science Editors:

Sears JS. Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures . [Doctoral Dissertation]. University of Arizona; 2017. Available from: http://hdl.handle.net/10150/625672

30. Auzelle, Thomas. Nanofils de GaN/AlN : nucléation, polarité et hétérostructures quantiques : GaN/AlN nanowires : nucleation, polarity and quantum heterostructures.

Degree: Docteur es, Nanophysique, 2015, Université Grenoble Alpes (ComUE)

Usant de certaines conditions, la croissance épitaxiale de GaN sur un large panel de substrats donne lieu à une assemblée de nanofils. Cette géométrie filaire… (more)

Subjects/Keywords: Nanofils; Nitrure; Polarité; Mbe; Boite quantique; Nucleation; Nanowires; Nitride; Polarity; Mbe; Quantum dot; Nucleation; 530

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Auzelle, T. (2015). Nanofils de GaN/AlN : nucléation, polarité et hétérostructures quantiques : GaN/AlN nanowires : nucleation, polarity and quantum heterostructures. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2015GREAY057

Chicago Manual of Style (16th Edition):

Auzelle, Thomas. “Nanofils de GaN/AlN : nucléation, polarité et hétérostructures quantiques : GaN/AlN nanowires : nucleation, polarity and quantum heterostructures.” 2015. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed August 07, 2020. http://www.theses.fr/2015GREAY057.

MLA Handbook (7th Edition):

Auzelle, Thomas. “Nanofils de GaN/AlN : nucléation, polarité et hétérostructures quantiques : GaN/AlN nanowires : nucleation, polarity and quantum heterostructures.” 2015. Web. 07 Aug 2020.

Vancouver:

Auzelle T. Nanofils de GaN/AlN : nucléation, polarité et hétérostructures quantiques : GaN/AlN nanowires : nucleation, polarity and quantum heterostructures. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2015. [cited 2020 Aug 07]. Available from: http://www.theses.fr/2015GREAY057.

Council of Science Editors:

Auzelle T. Nanofils de GaN/AlN : nucléation, polarité et hétérostructures quantiques : GaN/AlN nanowires : nucleation, polarity and quantum heterostructures. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2015. Available from: http://www.theses.fr/2015GREAY057

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