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You searched for subject:(MBE). Showing records 1 – 30 of 253 total matches.

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NSYSU

1. Hsieh, Chia-Ho. The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy.

Degree: PhD, Materials and Optoelectronic Science, 2009, NSYSU

 The group III nitride semiconductor grown on c-plane sapphire by radio frequency plasma assisted molecular beam epitaxy has been studied. To archive good quality GaN… (more)

Subjects/Keywords: MBE; GaN; LiAlO2

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsieh, C. (2009). The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237

Chicago Manual of Style (16th Edition):

Hsieh, Chia-Ho. “The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy.” 2009. Doctoral Dissertation, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237.

MLA Handbook (7th Edition):

Hsieh, Chia-Ho. “The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy.” 2009. Web. 26 Apr 2019.

Vancouver:

Hsieh C. The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy. [Internet] [Doctoral dissertation]. NSYSU; 2009. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237.

Council of Science Editors:

Hsieh C. The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy. [Doctoral Dissertation]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237


NSYSU

2. Wu, Hao-Fei. Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE.

Degree: Master, Physics, 2011, NSYSU

 We invistegated the characteristic of GaN grown on LiAlO2 substrate by molecular epitaxy beam. First of all , we try to changed the growth ratio… (more)

Subjects/Keywords: MBE; LiAlO2; GaN

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APA (6th Edition):

Wu, H. (2011). Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Hao-Fei. “Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE.” 2011. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Hao-Fei. “Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE.” 2011. Web. 26 Apr 2019.

Vancouver:

Wu H. Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE. [Internet] [Thesis]. NSYSU; 2011. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu H. Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

3. Satyaki Ganguly. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.

Degree: PhD, Electrical Engineering, 2014, University of Notre Dame

  Owing to the large band gap (EgGaN=3.4eV) and high electron saturation velocity, GaN based high electron mobility transistors (HEMTs) are attractive for high voltage… (more)

Subjects/Keywords: III-Nitrides; MBE

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APA (6th Edition):

Ganguly, S. (2014). High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/0c483j34v8f

Chicago Manual of Style (16th Edition):

Ganguly, Satyaki. “High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.” 2014. Doctoral Dissertation, University of Notre Dame. Accessed April 26, 2019. https://curate.nd.edu/show/0c483j34v8f.

MLA Handbook (7th Edition):

Ganguly, Satyaki. “High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.” 2014. Web. 26 Apr 2019.

Vancouver:

Ganguly S. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2014. [cited 2019 Apr 26]. Available from: https://curate.nd.edu/show/0c483j34v8f.

Council of Science Editors:

Ganguly S. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. [Doctoral Dissertation]. University of Notre Dame; 2014. Available from: https://curate.nd.edu/show/0c483j34v8f


University of Notre Dame

4. Kevin Goodman. Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>.

Degree: PhD, Electrical Engineering, 2010, University of Notre Dame

  Currently, 21% of the world’s electrical energy is used in artificial lighting. White light LEDs, the holy grail of lighting, are currently the subject(more)

Subjects/Keywords: mbe; nitride; nanowires

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APA (6th Edition):

Goodman, K. (2010). Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/wh246q20m66

Chicago Manual of Style (16th Edition):

Goodman, Kevin. “Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>.” 2010. Doctoral Dissertation, University of Notre Dame. Accessed April 26, 2019. https://curate.nd.edu/show/wh246q20m66.

MLA Handbook (7th Edition):

Goodman, Kevin. “Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>.” 2010. Web. 26 Apr 2019.

Vancouver:

Goodman K. Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2010. [cited 2019 Apr 26]. Available from: https://curate.nd.edu/show/wh246q20m66.

Council of Science Editors:

Goodman K. Molecular Beam Epitaxial Growth & Characterization of Nitride Nanowires</h1>. [Doctoral Dissertation]. University of Notre Dame; 2010. Available from: https://curate.nd.edu/show/wh246q20m66


University of Notre Dame

5. Guowang Li. MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>.

Degree: MSin Electrical Engineering, Electrical Engineering, 2010, University of Notre Dame

  III-V nitride semiconductors have exhibited a promising technology platform for optoelectronic and electronic devices. For low Al composition (<40 %) AlGaN/GaN high-electron mobility transistors… (more)

Subjects/Keywords: GaN; MBE; Transistor

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APA (6th Edition):

Li, G. (2010). MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/7w62f76443f

Chicago Manual of Style (16th Edition):

Li, Guowang. “MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>.” 2010. Masters Thesis, University of Notre Dame. Accessed April 26, 2019. https://curate.nd.edu/show/7w62f76443f.

MLA Handbook (7th Edition):

Li, Guowang. “MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>.” 2010. Web. 26 Apr 2019.

Vancouver:

Li G. MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2010. [cited 2019 Apr 26]. Available from: https://curate.nd.edu/show/7w62f76443f.

Council of Science Editors:

Li G. MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>. [Masters Thesis]. University of Notre Dame; 2010. Available from: https://curate.nd.edu/show/7w62f76443f


Texas State University – San Marcos

6. Arava, Hanu K. Integration of Functional Oxides onto Silicon Substrates.

Degree: MS, Materials Physics, 2014, Texas State University – San Marcos

 The purpose of this thesis is to investigate the integration of functional oxides onto silicon substrates using MBE and Spin-Coating techniques. Functionality is defined, by… (more)

Subjects/Keywords: Oxides; MBE; Spin Coating

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APA (6th Edition):

Arava, H. K. (2014). Integration of Functional Oxides onto Silicon Substrates. (Masters Thesis). Texas State University – San Marcos. Retrieved from https://digital.library.txstate.edu/handle/10877/6374

Chicago Manual of Style (16th Edition):

Arava, Hanu K. “Integration of Functional Oxides onto Silicon Substrates.” 2014. Masters Thesis, Texas State University – San Marcos. Accessed April 26, 2019. https://digital.library.txstate.edu/handle/10877/6374.

MLA Handbook (7th Edition):

Arava, Hanu K. “Integration of Functional Oxides onto Silicon Substrates.” 2014. Web. 26 Apr 2019.

Vancouver:

Arava HK. Integration of Functional Oxides onto Silicon Substrates. [Internet] [Masters thesis]. Texas State University – San Marcos; 2014. [cited 2019 Apr 26]. Available from: https://digital.library.txstate.edu/handle/10877/6374.

Council of Science Editors:

Arava HK. Integration of Functional Oxides onto Silicon Substrates. [Masters Thesis]. Texas State University – San Marcos; 2014. Available from: https://digital.library.txstate.edu/handle/10877/6374


NSYSU

7. Liu, Chih-Hui. The study of optical-electric properties CuInSe2 doping Ge.

Degree: Master, Materials Science and Engineering, 2000, NSYSU

 CuInSe2 chalcopyrie compound was grown heteroepitaxially on (001)GaAs substrate by molecular beam epitaxy system. Single-crystalline chalcopyrite films can be obtained by the control of substrate… (more)

Subjects/Keywords: CuInSe2; MBE

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APA (6th Edition):

Liu, C. (2000). The study of optical-electric properties CuInSe2 doping Ge. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1124100-192312

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Chih-Hui. “The study of optical-electric properties CuInSe2 doping Ge.” 2000. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1124100-192312.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Chih-Hui. “The study of optical-electric properties CuInSe2 doping Ge.” 2000. Web. 26 Apr 2019.

Vancouver:

Liu C. The study of optical-electric properties CuInSe2 doping Ge. [Internet] [Thesis]. NSYSU; 2000. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1124100-192312.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu C. The study of optical-electric properties CuInSe2 doping Ge. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1124100-192312

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

8. Chen, Yu-hao. Analysis of Mg-doped GaN thin film grown by PAMBE.

Degree: Master, Physics, 2010, NSYSU

 We grew Mg-doped of GaN on GaN template by plasma-assisted molecular beam epitaxy (PAMBE) and measured these samples by Hall measurement, I-V curve measurement, PL,… (more)

Subjects/Keywords: Mg-doped; MBE; GaN

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APA (6th Edition):

Chen, Y. (2010). Analysis of Mg-doped GaN thin film grown by PAMBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yu-hao. “Analysis of Mg-doped GaN thin film grown by PAMBE.” 2010. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yu-hao. “Analysis of Mg-doped GaN thin film grown by PAMBE.” 2010. Web. 26 Apr 2019.

Vancouver:

Chen Y. Analysis of Mg-doped GaN thin film grown by PAMBE. [Internet] [Thesis]. NSYSU; 2010. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Analysis of Mg-doped GaN thin film grown by PAMBE. [Thesis]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

9. Chen, Zong-Ting. Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE.

Degree: Master, Physics, 2013, NSYSU

 We have grown InGaN/GaN quantum wells (QWs) by plasma-assisted molecular beam epitaxy(PA MBE) for the application light-emitting diodes (LEDs). In order to evaluate the optical… (more)

Subjects/Keywords: Qantum well; GaN; InGaN; MBE

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APA (6th Edition):

Chen, Z. (2013). Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Zong-Ting. “Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE.” 2013. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Zong-Ting. “Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE.” 2013. Web. 26 Apr 2019.

Vancouver:

Chen Z. Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Z. Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. Tseng, Chun-Lung. Epitaxial Growth of Mg-doped ZnO by Molecular Beam Epitaxy.

Degree: Master, Materials and Optoelectronic Science, 2011, NSYSU

 The present study aims at studying the surface morphology, crystallinity and optical emission property of Mg added ZnO grown by molecular beam epitaxy. Zn1-xMgxO epitaxial… (more)

Subjects/Keywords: annealing; LAO; Al2O3; ZnMgO; MBE

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APA (6th Edition):

Tseng, C. (2011). Epitaxial Growth of Mg-doped ZnO by Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1128111-165718

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tseng, Chun-Lung. “Epitaxial Growth of Mg-doped ZnO by Molecular Beam Epitaxy.” 2011. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1128111-165718.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tseng, Chun-Lung. “Epitaxial Growth of Mg-doped ZnO by Molecular Beam Epitaxy.” 2011. Web. 26 Apr 2019.

Vancouver:

Tseng C. Epitaxial Growth of Mg-doped ZnO by Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2011. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1128111-165718.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tseng C. Epitaxial Growth of Mg-doped ZnO by Molecular Beam Epitaxy. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1128111-165718

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

11. Seldrum, Thomas. Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2.

Degree: 2009, DIAL (Belgium)

This Ph. D. thesis is dedicated to the study of selective growth by molecular beam epitaxy of CdTe on CdTe(211)B and Si(100) islands patterned on… (more)

Subjects/Keywords: CdTe; MBE; Selective growth

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APA (6th Edition):

Seldrum, T. (2009). Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2. (Thesis). DIAL (Belgium). Retrieved from http://hdl.handle.net/2078.2/24879

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Seldrum, Thomas. “Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2.” 2009. Thesis, DIAL (Belgium). Accessed April 26, 2019. http://hdl.handle.net/2078.2/24879.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Seldrum, Thomas. “Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2.” 2009. Web. 26 Apr 2019.

Vancouver:

Seldrum T. Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2. [Internet] [Thesis]. DIAL (Belgium); 2009. [cited 2019 Apr 26]. Available from: http://hdl.handle.net/2078.2/24879.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Seldrum T. Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2. [Thesis]. DIAL (Belgium); 2009. Available from: http://hdl.handle.net/2078.2/24879

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Duke University

12. Jiao, Wenyuan. Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy .

Degree: 2015, Duke University

  InAlN thin films and InAlN/GaN heterostructures have been intensively studied over recent years due to their applications in a variety of devices, including high… (more)

Subjects/Keywords: Electrical engineering; HEMT; InAlN; MBE

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APA (6th Edition):

Jiao, W. (2015). Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy . (Thesis). Duke University. Retrieved from http://hdl.handle.net/10161/11323

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jiao, Wenyuan. “Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy .” 2015. Thesis, Duke University. Accessed April 26, 2019. http://hdl.handle.net/10161/11323.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jiao, Wenyuan. “Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy .” 2015. Web. 26 Apr 2019.

Vancouver:

Jiao W. Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy . [Internet] [Thesis]. Duke University; 2015. [cited 2019 Apr 26]. Available from: http://hdl.handle.net/10161/11323.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jiao W. Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy . [Thesis]. Duke University; 2015. Available from: http://hdl.handle.net/10161/11323

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

13. Guowang Li. Nitride Channels on Aluminum Nitride: Materials and Devices</h1>.

Degree: PhD, Electrical Engineering, 2015, University of Notre Dame

  III-nitride electronic devices have made significant progress in high frequency and high power applications in the past decade. In this work, nitride heterostructures with… (more)

Subjects/Keywords: GaN; AlN; FET; MBE

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APA (6th Edition):

Li, G. (2015). Nitride Channels on Aluminum Nitride: Materials and Devices</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/z029p269t5c

Chicago Manual of Style (16th Edition):

Li, Guowang. “Nitride Channels on Aluminum Nitride: Materials and Devices</h1>.” 2015. Doctoral Dissertation, University of Notre Dame. Accessed April 26, 2019. https://curate.nd.edu/show/z029p269t5c.

MLA Handbook (7th Edition):

Li, Guowang. “Nitride Channels on Aluminum Nitride: Materials and Devices</h1>.” 2015. Web. 26 Apr 2019.

Vancouver:

Li G. Nitride Channels on Aluminum Nitride: Materials and Devices</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2015. [cited 2019 Apr 26]. Available from: https://curate.nd.edu/show/z029p269t5c.

Council of Science Editors:

Li G. Nitride Channels on Aluminum Nitride: Materials and Devices</h1>. [Doctoral Dissertation]. University of Notre Dame; 2015. Available from: https://curate.nd.edu/show/z029p269t5c


University of Notre Dame

14. Kasra Pourang. Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>.

Degree: MSin Electrical Engineering, Electrical Engineering, 2015, University of Notre Dame

  In this work, we present the heteroepitaxial and homoepitaxial growth and characterization of single crystal Ga2O3 by plasma-assisted molecular beam epitaxy (MBE). For growth,… (more)

Subjects/Keywords: Plasma MBE; Gallium oxide

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pourang, K. (2015). Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/bn999595w4d

Chicago Manual of Style (16th Edition):

Pourang, Kasra. “Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>.” 2015. Masters Thesis, University of Notre Dame. Accessed April 26, 2019. https://curate.nd.edu/show/bn999595w4d.

MLA Handbook (7th Edition):

Pourang, Kasra. “Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>.” 2015. Web. 26 Apr 2019.

Vancouver:

Pourang K. Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2015. [cited 2019 Apr 26]. Available from: https://curate.nd.edu/show/bn999595w4d.

Council of Science Editors:

Pourang K. Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>. [Masters Thesis]. University of Notre Dame; 2015. Available from: https://curate.nd.edu/show/bn999595w4d

15. Maia, Álvaro Diego Bernardino. Efeitos de spin em poços quânticos largos.

Degree: Mestrado, Física, 2007, University of São Paulo

Este trabalho apresenta o resultado de investigações sobre efeitos de spin em amostras de poços quânticos simples e duplos de AlGaAs, crescidos em substratos de… (more)

Subjects/Keywords: G factor; GaAs; MBE; MBE; Poços Quânticos; Quantum Well; Semiconductor; Semicondutores

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APA (6th Edition):

Maia, . D. B. (2007). Efeitos de spin em poços quânticos largos. (Masters Thesis). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/43/43134/tde-25082009-080807/ ;

Chicago Manual of Style (16th Edition):

Maia, Álvaro Diego Bernardino. “Efeitos de spin em poços quânticos largos.” 2007. Masters Thesis, University of São Paulo. Accessed April 26, 2019. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-25082009-080807/ ;.

MLA Handbook (7th Edition):

Maia, Álvaro Diego Bernardino. “Efeitos de spin em poços quânticos largos.” 2007. Web. 26 Apr 2019.

Vancouver:

Maia DB. Efeitos de spin em poços quânticos largos. [Internet] [Masters thesis]. University of São Paulo; 2007. [cited 2019 Apr 26]. Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-25082009-080807/ ;.

Council of Science Editors:

Maia DB. Efeitos de spin em poços quânticos largos. [Masters Thesis]. University of São Paulo; 2007. Available from: http://www.teses.usp.br/teses/disponiveis/43/43134/tde-25082009-080807/ ;

16. Ye, Hong. Electrical Characterization of GaN:Si and AlGaN:Si.

Degree: 2011, Chalmers University of Technology

Subjects/Keywords: GaN; AlGaN; MBE

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APA (6th Edition):

Ye, H. (2011). Electrical Characterization of GaN:Si and AlGaN:Si. (Thesis). Chalmers University of Technology. Retrieved from http://studentarbeten.chalmers.se/publication/154356-electrical-characterization-of-gansi-and-algansi

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ye, Hong. “Electrical Characterization of GaN:Si and AlGaN:Si.” 2011. Thesis, Chalmers University of Technology. Accessed April 26, 2019. http://studentarbeten.chalmers.se/publication/154356-electrical-characterization-of-gansi-and-algansi.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ye, Hong. “Electrical Characterization of GaN:Si and AlGaN:Si.” 2011. Web. 26 Apr 2019.

Vancouver:

Ye H. Electrical Characterization of GaN:Si and AlGaN:Si. [Internet] [Thesis]. Chalmers University of Technology; 2011. [cited 2019 Apr 26]. Available from: http://studentarbeten.chalmers.se/publication/154356-electrical-characterization-of-gansi-and-algansi.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ye H. Electrical Characterization of GaN:Si and AlGaN:Si. [Thesis]. Chalmers University of Technology; 2011. Available from: http://studentarbeten.chalmers.se/publication/154356-electrical-characterization-of-gansi-and-algansi

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

17. Chen, Yen-Liang. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.

Degree: PhD, Physics, 2010, NSYSU

 The quality of GaN template layer plays a very important role in high electron mobility transistors. We proposed a special method in the growth of… (more)

Subjects/Keywords: nano wire; high mobility; MBE; GaN; AlGaN

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APA (6th Edition):

Chen, Y. (2010). The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827

Chicago Manual of Style (16th Edition):

Chen, Yen-Liang. “The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.” 2010. Doctoral Dissertation, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827.

MLA Handbook (7th Edition):

Chen, Yen-Liang. “The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.” 2010. Web. 26 Apr 2019.

Vancouver:

Chen Y. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. [Internet] [Doctoral dissertation]. NSYSU; 2010. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827.

Council of Science Editors:

Chen Y. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. [Doctoral Dissertation]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827


NSYSU

18. Pang, Wen-Yuan. Characterization of GaN grown on LiAlO2 by molecular epitaxy beam.

Degree: Master, Physics, 2007, NSYSU

 We invistegated the characteristic of GaN grown on LiAlO2 substrate by molecular epitaxy beam. We observed the c-plane GaN crystalls assembled at the step-edge of… (more)

Subjects/Keywords: GaN; LiAlO2; MBE

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APA (6th Edition):

Pang, W. (2007). Characterization of GaN grown on LiAlO2 by molecular epitaxy beam. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pang, Wen-Yuan. “Characterization of GaN grown on LiAlO2 by molecular epitaxy beam.” 2007. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pang, Wen-Yuan. “Characterization of GaN grown on LiAlO2 by molecular epitaxy beam.” 2007. Web. 26 Apr 2019.

Vancouver:

Pang W. Characterization of GaN grown on LiAlO2 by molecular epitaxy beam. [Internet] [Thesis]. NSYSU; 2007. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pang W. Characterization of GaN grown on LiAlO2 by molecular epitaxy beam. [Thesis]. NSYSU; 2007. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719107-173536

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

19. Chang, Yao-i. Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy.

Degree: Master, Physics, 2007, NSYSU

 We mainly studied the morphology of GaN structures which were grown by plasma-assisted molecular beam epitaxy. The only condition we changed is Ga/N Ratio. Based… (more)

Subjects/Keywords: GaN; SEM; MBE

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APA (6th Edition):

Chang, Y. (2007). Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-014858

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Yao-i. “Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy.” 2007. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-014858.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Yao-i. “Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy.” 2007. Web. 26 Apr 2019.

Vancouver:

Chang Y. Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy. [Internet] [Thesis]. NSYSU; 2007. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-014858.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang Y. Effect of Ga to N flux ratio on the GaN surface morphologies grown by plasma-assisted molecular-beam epitaxy. [Thesis]. NSYSU; 2007. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726107-014858

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

20. Gau, Ming-Horng. Growth and characterization of AlGaN/GaN heterostructures.

Degree: Master, Physics, 2004, NSYSU

 We will discuss the growth and characterization of AlxGa1-xN/GaN on sapphire substrate by plasma-assisted molecular beam epitaxy. By performing the X-ray diffraction (XRD) of our… (more)

Subjects/Keywords: GaN; MBE; AlGaN

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APA (6th Edition):

Gau, M. (2004). Growth and characterization of AlGaN/GaN heterostructures. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gau, Ming-Horng. “Growth and characterization of AlGaN/GaN heterostructures.” 2004. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gau, Ming-Horng. “Growth and characterization of AlGaN/GaN heterostructures.” 2004. Web. 26 Apr 2019.

Vancouver:

Gau M. Growth and characterization of AlGaN/GaN heterostructures. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gau M. Growth and characterization of AlGaN/GaN heterostructures. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

21. Fan, Ni-wan. Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD.

Degree: PhD, Physics, 2004, NSYSU

 We discuss the PL spectra of the InN band gap. The InN thin film epitaxy grows on both Si (111) and sapphire (0001) by the… (more)

Subjects/Keywords: InN; PA-MBE

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APA (6th Edition):

Fan, N. (2004). Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803

Chicago Manual of Style (16th Edition):

Fan, Ni-wan. “Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD.” 2004. Doctoral Dissertation, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803.

MLA Handbook (7th Edition):

Fan, Ni-wan. “Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD.” 2004. Web. 26 Apr 2019.

Vancouver:

Fan N. Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD. [Internet] [Doctoral dissertation]. NSYSU; 2004. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803.

Council of Science Editors:

Fan N. Investigation of the PA-MBE grown InN thin film using Photoluminescence and HRXRD. [Doctoral Dissertation]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0729104-220803


NSYSU

22. Chen, Ting-Hong. Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy.

Degree: Master, Physics, 2012, NSYSU

 In this work, Mn atoms are doped into GaN nanorods by two doping types, homogeneous and delta doping, and GaN nanorods are grown on Si… (more)

Subjects/Keywords: MBE; GaN; Nanocolumn; DMS; Nanorod; GaMnN

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APA (6th Edition):

Chen, T. (2012). Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-182742

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Ting-Hong. “Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy.” 2012. Thesis, NSYSU. Accessed April 26, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-182742.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Ting-Hong. “Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy.” 2012. Web. 26 Apr 2019.

Vancouver:

Chen T. Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Apr 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-182742.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen T. Characterization and Growth of GaMnN Nanorods Grown by Plasma-Assisted Molecular Beam Epitaxy. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-182742

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

23. Lee, Che-hui. MBE Growth and Properties of Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper Phases.

Degree: PhD, Materials Science and Engineering, 2012, Penn State University

 In this work epitaxial films of the Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper homologous series with n = 1, 2, 3, 4, 5, 6, 10 and ∞ were grown… (more)

Subjects/Keywords: MBE; oxide; Ruddlesden-Popper; strain; tunable dielectrics

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APA (6th Edition):

Lee, C. (2012). MBE Growth and Properties of Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper Phases. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/16244

Chicago Manual of Style (16th Edition):

Lee, Che-hui. “MBE Growth and Properties of Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper Phases.” 2012. Doctoral Dissertation, Penn State University. Accessed April 26, 2019. https://etda.libraries.psu.edu/catalog/16244.

MLA Handbook (7th Edition):

Lee, Che-hui. “MBE Growth and Properties of Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper Phases.” 2012. Web. 26 Apr 2019.

Vancouver:

Lee C. MBE Growth and Properties of Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper Phases. [Internet] [Doctoral dissertation]. Penn State University; 2012. [cited 2019 Apr 26]. Available from: https://etda.libraries.psu.edu/catalog/16244.

Council of Science Editors:

Lee C. MBE Growth and Properties of Sr(n+1)Ti(n)O(3n+1) Ruddlesden-Popper Phases. [Doctoral Dissertation]. Penn State University; 2012. Available from: https://etda.libraries.psu.edu/catalog/16244

24. Larrison, Abigail. Mind, Brain and Education as a Framework for Curricular Reform .

Degree: 2013, California State University – San Marcos

 A growing collaboration between psychologists, neuroscientists, and educators has culminated in the emergence of a new academic discipline known as Mind, Brain and Education (MBE).… (more)

Subjects/Keywords: Mind, Brain and Education; MBE; neuropedagogy; neuroeducation

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APA (6th Edition):

Larrison, A. (2013). Mind, Brain and Education as a Framework for Curricular Reform . (Thesis). California State University – San Marcos. Retrieved from http://hdl.handle.net/10211.8/305

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Larrison, Abigail. “Mind, Brain and Education as a Framework for Curricular Reform .” 2013. Thesis, California State University – San Marcos. Accessed April 26, 2019. http://hdl.handle.net/10211.8/305.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Larrison, Abigail. “Mind, Brain and Education as a Framework for Curricular Reform .” 2013. Web. 26 Apr 2019.

Vancouver:

Larrison A. Mind, Brain and Education as a Framework for Curricular Reform . [Internet] [Thesis]. California State University – San Marcos; 2013. [cited 2019 Apr 26]. Available from: http://hdl.handle.net/10211.8/305.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Larrison A. Mind, Brain and Education as a Framework for Curricular Reform . [Thesis]. California State University – San Marcos; 2013. Available from: http://hdl.handle.net/10211.8/305

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of California – Riverside

25. ZUO, ZHENG. Transition Metal Doped ZnO as Diluted Magnetic Semiconductor.

Degree: Electrical Engineering, 2013, University of California – Riverside

 Transition metal doped ZnO has been proposed to be a Diluted Magnetic Semiconductor with room temperature ferromagnetism. High quality Mn doped ZnO was grown on… (more)

Subjects/Keywords: Electrical engineering; Ag; DMS; MBE; Mn; ZnO

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APA (6th Edition):

ZUO, Z. (2013). Transition Metal Doped ZnO as Diluted Magnetic Semiconductor. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/3s31902x

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

ZUO, ZHENG. “Transition Metal Doped ZnO as Diluted Magnetic Semiconductor.” 2013. Thesis, University of California – Riverside. Accessed April 26, 2019. http://www.escholarship.org/uc/item/3s31902x.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

ZUO, ZHENG. “Transition Metal Doped ZnO as Diluted Magnetic Semiconductor.” 2013. Web. 26 Apr 2019.

Vancouver:

ZUO Z. Transition Metal Doped ZnO as Diluted Magnetic Semiconductor. [Internet] [Thesis]. University of California – Riverside; 2013. [cited 2019 Apr 26]. Available from: http://www.escholarship.org/uc/item/3s31902x.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

ZUO Z. Transition Metal Doped ZnO as Diluted Magnetic Semiconductor. [Thesis]. University of California – Riverside; 2013. Available from: http://www.escholarship.org/uc/item/3s31902x

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

26. Horáček, Matěj. Návrh atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách UHV .

Degree: 2013, Brno University of Technology

 Tato bakalářská práce se zabývá návrhem atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách ultravysokého vakua. V první části práce je stručně popsána problematika… (more)

Subjects/Keywords: ATOMÁRNÍ ZDROJ; TERMÁLNÍ SVAZKY ATOMŮ UHLÍKU; GRAFEN; MBE; RŮST ULTRATENKÝCH VRSTEV; UHV; C-MBE; ATOMIC SOURCE; THERMAL ATOMIC CARBON BEAMS; GRAPHENE; MBE; GROWTH OF ULTRATHIN LAYERS; UHV; C-MBE

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APA (6th Edition):

Horáček, M. (2013). Návrh atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách UHV . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/27964

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Horáček, Matěj. “Návrh atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách UHV .” 2013. Thesis, Brno University of Technology. Accessed April 26, 2019. http://hdl.handle.net/11012/27964.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Horáček, Matěj. “Návrh atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách UHV .” 2013. Web. 26 Apr 2019.

Vancouver:

Horáček M. Návrh atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách UHV . [Internet] [Thesis]. Brno University of Technology; 2013. [cited 2019 Apr 26]. Available from: http://hdl.handle.net/11012/27964.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Horáček M. Návrh atomárního zdroje uhlíku pro přípravu grafenových vrstev v podmínkách UHV . [Thesis]. Brno University of Technology; 2013. Available from: http://hdl.handle.net/11012/27964

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

27. Noskin, Lindsey Erin. Study of the Metal-Insulator Transition in LaCoO<sub>3-<i>x</i></sub> Epitaxial Films .

Degree: 2018, Cornell University

 Materials with temperature-dependent metal-to-insulator transitions (MIT) have gained attention for the abrupt collapse of the band gap during the transition. Various novel transistor structures which… (more)

Subjects/Keywords: perovskite; Materials Science; expitaxy; MBE; MIT; transition

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APA (6th Edition):

Noskin, L. E. (2018). Study of the Metal-Insulator Transition in LaCoO<sub>3-<i>x</i></sub> Epitaxial Films . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/59501

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Noskin, Lindsey Erin. “Study of the Metal-Insulator Transition in LaCoO<sub>3-<i>x</i></sub> Epitaxial Films .” 2018. Thesis, Cornell University. Accessed April 26, 2019. http://hdl.handle.net/1813/59501.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Noskin, Lindsey Erin. “Study of the Metal-Insulator Transition in LaCoO<sub>3-<i>x</i></sub> Epitaxial Films .” 2018. Web. 26 Apr 2019.

Vancouver:

Noskin LE. Study of the Metal-Insulator Transition in LaCoO<sub>3-<i>x</i></sub> Epitaxial Films . [Internet] [Thesis]. Cornell University; 2018. [cited 2019 Apr 26]. Available from: http://hdl.handle.net/1813/59501.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Noskin LE. Study of the Metal-Insulator Transition in LaCoO<sub>3-<i>x</i></sub> Epitaxial Films . [Thesis]. Cornell University; 2018. Available from: http://hdl.handle.net/1813/59501

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arizona

28. Sears, Jasmine Soria. Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures .

Degree: 2017, University of Arizona

 The fields of telecommunications and optoelectronics are under constant pressure to shrink devices and reduce power consumption. Micro-scale photonic and plasmonic structures can trap light… (more)

Subjects/Keywords: III-V; MBE; Microstructure; Photonic; Plasmonic; Silicon

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APA (6th Edition):

Sears, J. S. (2017). Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/625672

Chicago Manual of Style (16th Edition):

Sears, Jasmine Soria. “Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures .” 2017. Doctoral Dissertation, University of Arizona. Accessed April 26, 2019. http://hdl.handle.net/10150/625672.

MLA Handbook (7th Edition):

Sears, Jasmine Soria. “Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures .” 2017. Web. 26 Apr 2019.

Vancouver:

Sears JS. Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures . [Internet] [Doctoral dissertation]. University of Arizona; 2017. [cited 2019 Apr 26]. Available from: http://hdl.handle.net/10150/625672.

Council of Science Editors:

Sears JS. Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures . [Doctoral Dissertation]. University of Arizona; 2017. Available from: http://hdl.handle.net/10150/625672


University of Notre Dame

29. Yu Cao. Study of AlN/GaN HEMTs: MBE Growth, Transport Properties and Device Issues</h1>.

Degree: PhD, Electrical Engineering, 2010, University of Notre Dame

  To achieve high-speed nitride-based high electron mobility transistors (HEMTs), both lateral and vertical scaling are required for future device fabrication. The large polarization difference… (more)

Subjects/Keywords: MBE; Growth; GaN; Heterojunction; Transport; AlN

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APA (6th Edition):

Cao, Y. (2010). Study of AlN/GaN HEMTs: MBE Growth, Transport Properties and Device Issues</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/j9601z42v94

Chicago Manual of Style (16th Edition):

Cao, Yu. “Study of AlN/GaN HEMTs: MBE Growth, Transport Properties and Device Issues</h1>.” 2010. Doctoral Dissertation, University of Notre Dame. Accessed April 26, 2019. https://curate.nd.edu/show/j9601z42v94.

MLA Handbook (7th Edition):

Cao, Yu. “Study of AlN/GaN HEMTs: MBE Growth, Transport Properties and Device Issues</h1>.” 2010. Web. 26 Apr 2019.

Vancouver:

Cao Y. Study of AlN/GaN HEMTs: MBE Growth, Transport Properties and Device Issues</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2010. [cited 2019 Apr 26]. Available from: https://curate.nd.edu/show/j9601z42v94.

Council of Science Editors:

Cao Y. Study of AlN/GaN HEMTs: MBE Growth, Transport Properties and Device Issues</h1>. [Doctoral Dissertation]. University of Notre Dame; 2010. Available from: https://curate.nd.edu/show/j9601z42v94


University of Notre Dame

30. Yu Cao. Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions</h1>.

Degree: MS, Electrical Engineering, 2007, University of Notre Dame

  The large polarization difference between AlN and GaN provides extremely high electron densities at the interface of AlN/GaN heterojunctions. In this work the growths… (more)

Subjects/Keywords: MBE; Herterojunction; AlN

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Cao, Y. (2007). Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/th83kw5520m

Chicago Manual of Style (16th Edition):

Cao, Yu. “Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions</h1>.” 2007. Masters Thesis, University of Notre Dame. Accessed April 26, 2019. https://curate.nd.edu/show/th83kw5520m.

MLA Handbook (7th Edition):

Cao, Yu. “Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions</h1>.” 2007. Web. 26 Apr 2019.

Vancouver:

Cao Y. Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2007. [cited 2019 Apr 26]. Available from: https://curate.nd.edu/show/th83kw5520m.

Council of Science Editors:

Cao Y. Studies of MBE-Grown Single and Multiple AlN/GaN Heterojunctions</h1>. [Masters Thesis]. University of Notre Dame; 2007. Available from: https://curate.nd.edu/show/th83kw5520m

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