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Arizona State University

1. Indluru, Anil Reddy. Metal-Oxide Based Transparent Conductive Oxides and Thin Film Transistors for Flexible Electronics.

Degree: PhD, Materials Science and Engineering, 2011, Arizona State University

The object of this study is to investigate and improve the performance/stability of the flexible thin film transistors (TFTs) and to study the properties of metal oxide transparent conductive oxides for wide range of flexible electronic applications. Initially, a study has been done to improve the conductivity of ITO (indium tin oxide) films on PEN (polyethylene naphthalate) by inserting a thin layer of silver layer between two ITO layers. The multilayer with an optimum Ag mid-layer thickness, of 8 nm, exhibited excellent photopic average transmittance (~ 88 %), resistivity (~ 2.7 × 10-5 µ-cm.) and has the best Hackee figure of merit (41.0 × 10-3 Ω-1). The electrical conduction is dominated by two different scattering mechanisms depending on the thickness of the Ag mid-layer. Optical transmission is explained by scattering losses and absorption of light due to inter-band electronic transitions. A systematic study was carried out to improve the performance/stability of the TFTs on PEN. The performance and stability of a-Si:H and a-IZO (amorphous indium zinc oxide) TFTs were improved by performing a systematic low temperature (150 °C) anneals for extended times. For 96 hours annealed a-Si:H TFTs, the sub-threshold slope and off-current were reduced by a factor ~ 3 and by 2 orders of magnitude, respectively when compared to unannealed a-Si:H TFTs. For a-IZO TFTs, 48 hours of annealing is found to be the optimum time for the best performance and elevated temperature stability. These devices exhibit saturation mobility varying between 4.5-5.5 cm2/V-s, ION/IOFF ratio was 106 and a sub-threshold swing variation of 1-1.25 V/decade. An in-depth study on the mechanical and electromechanical stress response on the electrical properties of the a-IZO TFTs has also been investigated. Finally, the a-Si:H TFTs were exposed to gamma radiation to examine their radiation resistance. The interface trap density (Nit) values range from 5 to 6 × 1011 cm-2 for only electrical stress bias case. For "irradiation only" case, the Nit value increases from 5×1011 cm-2 to 2×1012 cm-2 after 3 hours of gamma radiation exposure, whereas it increases from 5×1011 cm-2 to 4×1012 cm-2 for "combined gamma and electrical stress".

Subjects/Keywords: Materials Science; Low temperature anneal; Thin film transistors; Transparent conductive oxides

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Indluru, A. R. (2011). Metal-Oxide Based Transparent Conductive Oxides and Thin Film Transistors for Flexible Electronics. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/8850

Chicago Manual of Style (16th Edition):

Indluru, Anil Reddy. “Metal-Oxide Based Transparent Conductive Oxides and Thin Film Transistors for Flexible Electronics.” 2011. Doctoral Dissertation, Arizona State University. Accessed November 17, 2019. http://repository.asu.edu/items/8850.

MLA Handbook (7th Edition):

Indluru, Anil Reddy. “Metal-Oxide Based Transparent Conductive Oxides and Thin Film Transistors for Flexible Electronics.” 2011. Web. 17 Nov 2019.

Vancouver:

Indluru AR. Metal-Oxide Based Transparent Conductive Oxides and Thin Film Transistors for Flexible Electronics. [Internet] [Doctoral dissertation]. Arizona State University; 2011. [cited 2019 Nov 17]. Available from: http://repository.asu.edu/items/8850.

Council of Science Editors:

Indluru AR. Metal-Oxide Based Transparent Conductive Oxides and Thin Film Transistors for Flexible Electronics. [Doctoral Dissertation]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/8850

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