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You searched for subject:(Low Temperature Gallium Nitride). Showing records 1 – 30 of 27112 total matches.

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Indian Institute of Science

1. Yaddanapudi, G R Krishna. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.

Degree: PhD, Faculty of Engineering, 2017, Indian Institute of Science

 Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting materials after Si and GaAs. The excellent optical and… (more)

Subjects/Keywords: Semiconductors; Nitrides; Gallium Nitride; N-Polar Gallium Nitride; Metal Organic Chemical Vapor Deposition (MOCVD); Galllium Nitride Growth; High Temperature Gallium Nitride; Low Temperature Gallium Nitride; GaN; Materials Engineering

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APA (6th Edition):

Yaddanapudi, G. R. K. (2017). Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2662

Chicago Manual of Style (16th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2017. Doctoral Dissertation, Indian Institute of Science. Accessed January 16, 2021. http://etd.iisc.ac.in/handle/2005/2662.

MLA Handbook (7th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2017. Web. 16 Jan 2021.

Vancouver:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2017. [cited 2021 Jan 16]. Available from: http://etd.iisc.ac.in/handle/2005/2662.

Council of Science Editors:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Doctoral Dissertation]. Indian Institute of Science; 2017. Available from: http://etd.iisc.ac.in/handle/2005/2662


University of Notre Dame

2. Faiza Afroz Faria. MBE Growth of GaN Heterostructures for High Performance HEMTs</h1>.

Degree: Electrical Engineering, 2015, University of Notre Dame

  GaN-based high electron mobility transistors (HEMTs) are promising for high speed and high power electronics applications. AlN and In0.17Al0.83N enable maximum possible vertical scaling… (more)

Subjects/Keywords: gallium nitride; regrown ohmic contact; plasma assisted mbe growth; hall-effect; afm; xrd; mbe regrowth of silicon doped gallium nitride; aluminum nitride; double channel high electron mobility transistor; low temperature mbe growth

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APA (6th Edition):

Faria, F. A. (2015). MBE Growth of GaN Heterostructures for High Performance HEMTs</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/mw22v40828m

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Faria, Faiza Afroz. “MBE Growth of GaN Heterostructures for High Performance HEMTs</h1>.” 2015. Thesis, University of Notre Dame. Accessed January 16, 2021. https://curate.nd.edu/show/mw22v40828m.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Faria, Faiza Afroz. “MBE Growth of GaN Heterostructures for High Performance HEMTs</h1>.” 2015. Web. 16 Jan 2021.

Vancouver:

Faria FA. MBE Growth of GaN Heterostructures for High Performance HEMTs</h1>. [Internet] [Thesis]. University of Notre Dame; 2015. [cited 2021 Jan 16]. Available from: https://curate.nd.edu/show/mw22v40828m.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Faria FA. MBE Growth of GaN Heterostructures for High Performance HEMTs</h1>. [Thesis]. University of Notre Dame; 2015. Available from: https://curate.nd.edu/show/mw22v40828m

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of California – Santa Cruz

3. Maize, Kerry. High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks.

Degree: Electrical Engineering, 2014, University of California – Santa Cruz

 Performance, efficiency, and reliability of modern high power, high speed microelectronics and nanoscale structures are strongly influenced by device self-heating on the micron and nanometer… (more)

Subjects/Keywords: Electrical engineering; Gallium nitride; nanowire network; Power transistors; Self-heating; Temperature; Thermoreflectance imaging microscopy

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APA (6th Edition):

Maize, K. (2014). High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks. (Thesis). University of California – Santa Cruz. Retrieved from http://www.escholarship.org/uc/item/2mg1c0n2

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Maize, Kerry. “High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks.” 2014. Thesis, University of California – Santa Cruz. Accessed January 16, 2021. http://www.escholarship.org/uc/item/2mg1c0n2.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Maize, Kerry. “High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks.” 2014. Web. 16 Jan 2021.

Vancouver:

Maize K. High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks. [Internet] [Thesis]. University of California – Santa Cruz; 2014. [cited 2021 Jan 16]. Available from: http://www.escholarship.org/uc/item/2mg1c0n2.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Maize K. High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks. [Thesis]. University of California – Santa Cruz; 2014. Available from: http://www.escholarship.org/uc/item/2mg1c0n2

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Virginia Tech

4. Saini, Kanika. Linearity Enhancement of High Power GaN HEMT Amplifier Circuits.

Degree: PhD, Electrical Engineering, 2019, Virginia Tech

 Power amplifiers (PAs) and Low Noise Amplifiers (LNAs) form the front end of the Radio Frequency (RF) transceiver systems. With the advent of complex modulation… (more)

Subjects/Keywords: Gallium Nitride (GaN); Linearization; Intermodulation Distortion; Low Noise Amplifier (LNA); Power Amplifier (PA)

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APA (6th Edition):

Saini, K. (2019). Linearity Enhancement of High Power GaN HEMT Amplifier Circuits. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/94361

Chicago Manual of Style (16th Edition):

Saini, Kanika. “Linearity Enhancement of High Power GaN HEMT Amplifier Circuits.” 2019. Doctoral Dissertation, Virginia Tech. Accessed January 16, 2021. http://hdl.handle.net/10919/94361.

MLA Handbook (7th Edition):

Saini, Kanika. “Linearity Enhancement of High Power GaN HEMT Amplifier Circuits.” 2019. Web. 16 Jan 2021.

Vancouver:

Saini K. Linearity Enhancement of High Power GaN HEMT Amplifier Circuits. [Internet] [Doctoral dissertation]. Virginia Tech; 2019. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10919/94361.

Council of Science Editors:

Saini K. Linearity Enhancement of High Power GaN HEMT Amplifier Circuits. [Doctoral Dissertation]. Virginia Tech; 2019. Available from: http://hdl.handle.net/10919/94361


Georgia Tech

5. Choi, Sukwon. Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods.

Degree: PhD, Mechanical Engineering, 2013, Georgia Tech

 The development of state-of-the-art AlGaN/GaN high electron mobility transistors (HEMTs) has shown much promise for advancing future RF and microwave communication systems. These revolutionary devices… (more)

Subjects/Keywords: Gallium nitride; HEMTs; Photoluminescence; Raman scattering; Semiconductor device reliability; Temperature measurement; Semiconductors; Gallium compounds; Nitrides; Raman effect

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APA (6th Edition):

Choi, S. (2013). Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/49108

Chicago Manual of Style (16th Edition):

Choi, Sukwon. “Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods.” 2013. Doctoral Dissertation, Georgia Tech. Accessed January 16, 2021. http://hdl.handle.net/1853/49108.

MLA Handbook (7th Edition):

Choi, Sukwon. “Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods.” 2013. Web. 16 Jan 2021.

Vancouver:

Choi S. Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1853/49108.

Council of Science Editors:

Choi S. Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/49108

6. Hautakangas, Sami. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.

Degree: 2005, Helsinki University of Technology

The effects of impurity atoms as well as various growth methods to the formation of vacancy type defects in gallium nitride (GaN) have been studied… (more)

Subjects/Keywords: gallium nitride; positron annihilation; vacancy

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APA (6th Edition):

Hautakangas, S. (2005). Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2005/isbn9512276674/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hautakangas, Sami. “Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.” 2005. Thesis, Helsinki University of Technology. Accessed January 16, 2021. http://lib.tkk.fi/Diss/2005/isbn9512276674/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hautakangas, Sami. “Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.” 2005. Web. 16 Jan 2021.

Vancouver:

Hautakangas S. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. [Internet] [Thesis]. Helsinki University of Technology; 2005. [cited 2021 Jan 16]. Available from: http://lib.tkk.fi/Diss/2005/isbn9512276674/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hautakangas S. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. [Thesis]. Helsinki University of Technology; 2005. Available from: http://lib.tkk.fi/Diss/2005/isbn9512276674/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

7. Brown, Richard. Advanced Dielectrics For Gallium Nitride Power Electronics.

Degree: PhD, Electrical Engineering, 2011, Cornell University

 This dissertation details the synthesis, characterization, and application of low-pressure chemical vapor deposited (LPCVD) Aluminum Silicon Nitride (Al x Siy Nz ) dielectrics to AlGaN/GaN… (more)

Subjects/Keywords: Gallium Nitride; hemt; Dielectric

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APA (6th Edition):

Brown, R. (2011). Advanced Dielectrics For Gallium Nitride Power Electronics. (Doctoral Dissertation). Cornell University. Retrieved from http://hdl.handle.net/1813/33475

Chicago Manual of Style (16th Edition):

Brown, Richard. “Advanced Dielectrics For Gallium Nitride Power Electronics.” 2011. Doctoral Dissertation, Cornell University. Accessed January 16, 2021. http://hdl.handle.net/1813/33475.

MLA Handbook (7th Edition):

Brown, Richard. “Advanced Dielectrics For Gallium Nitride Power Electronics.” 2011. Web. 16 Jan 2021.

Vancouver:

Brown R. Advanced Dielectrics For Gallium Nitride Power Electronics. [Internet] [Doctoral dissertation]. Cornell University; 2011. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1813/33475.

Council of Science Editors:

Brown R. Advanced Dielectrics For Gallium Nitride Power Electronics. [Doctoral Dissertation]. Cornell University; 2011. Available from: http://hdl.handle.net/1813/33475

8. Malkowski, Thomas. High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer.

Degree: 2016, University of California – eScholarship, University of California

Gallium nitride (GaN) has become an important semiconductor for the optoelectronics and power electronics fields in the pursuit of high efficiency devices. However, the lack… (more)

Subjects/Keywords: Materials Science; ammonothermal; gallium nitride

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APA (6th Edition):

Malkowski, T. (2016). High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/1tf7z2bm

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Malkowski, Thomas. “High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer.” 2016. Thesis, University of California – eScholarship, University of California. Accessed January 16, 2021. http://www.escholarship.org/uc/item/1tf7z2bm.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Malkowski, Thomas. “High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer.” 2016. Web. 16 Jan 2021.

Vancouver:

Malkowski T. High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2021 Jan 16]. Available from: http://www.escholarship.org/uc/item/1tf7z2bm.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Malkowski T. High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/1tf7z2bm

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Chicago

9. Sarkar, Ketaki. Study of Wide-Band Gap Oxide and Nitride-Based Semiconductors: Characterization and Device Physics.

Degree: 2018, University of Illinois – Chicago

 The increasing need for short wavelength material alongside high-power and high-frequency devices have encouraged a strong wave of research amongst the scientific community. While the… (more)

Subjects/Keywords: Zinc Oxide; Gallium Nitride

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APA (6th Edition):

Sarkar, K. (2018). Study of Wide-Band Gap Oxide and Nitride-Based Semiconductors: Characterization and Device Physics. (Thesis). University of Illinois – Chicago. Retrieved from http://hdl.handle.net/10027/22600

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sarkar, Ketaki. “Study of Wide-Band Gap Oxide and Nitride-Based Semiconductors: Characterization and Device Physics.” 2018. Thesis, University of Illinois – Chicago. Accessed January 16, 2021. http://hdl.handle.net/10027/22600.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sarkar, Ketaki. “Study of Wide-Band Gap Oxide and Nitride-Based Semiconductors: Characterization and Device Physics.” 2018. Web. 16 Jan 2021.

Vancouver:

Sarkar K. Study of Wide-Band Gap Oxide and Nitride-Based Semiconductors: Characterization and Device Physics. [Internet] [Thesis]. University of Illinois – Chicago; 2018. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10027/22600.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sarkar K. Study of Wide-Band Gap Oxide and Nitride-Based Semiconductors: Characterization and Device Physics. [Thesis]. University of Illinois – Chicago; 2018. Available from: http://hdl.handle.net/10027/22600

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. WANG YUN-HSIANG. DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY.

Degree: 2016, National University of Singapore

Subjects/Keywords: Gallium Nitride; HEMT; normally-off; temperature stability; power electroncis

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APA (6th Edition):

YUN-HSIANG, W. (2016). DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/129155

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

YUN-HSIANG, WANG. “DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY.” 2016. Thesis, National University of Singapore. Accessed January 16, 2021. http://scholarbank.nus.edu.sg/handle/10635/129155.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

YUN-HSIANG, WANG. “DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY.” 2016. Web. 16 Jan 2021.

Vancouver:

YUN-HSIANG W. DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY. [Internet] [Thesis]. National University of Singapore; 2016. [cited 2021 Jan 16]. Available from: http://scholarbank.nus.edu.sg/handle/10635/129155.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

YUN-HSIANG W. DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY. [Thesis]. National University of Singapore; 2016. Available from: http://scholarbank.nus.edu.sg/handle/10635/129155

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Toronto

11. Balakrishnan, Sai Shankar. Optical and Structural Characterization of Hydrogenated Aluminium Nitride Thin-films Synthesized at Low Temperature.

Degree: 2017, University of Toronto

A fundamental study of the optical and structural properties of hydrogenated aluminium nitride (AlN:H) films is presented. It is shown that incorporation of hydrogen within… (more)

Subjects/Keywords: Hydrogenated Aluminium Nitride; Low Temperature Synthesis; Optical and Structural Characterization; Spectrally Selective Coatings; 0652

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APA (6th Edition):

Balakrishnan, S. S. (2017). Optical and Structural Characterization of Hydrogenated Aluminium Nitride Thin-films Synthesized at Low Temperature. (Masters Thesis). University of Toronto. Retrieved from http://hdl.handle.net/1807/97123

Chicago Manual of Style (16th Edition):

Balakrishnan, Sai Shankar. “Optical and Structural Characterization of Hydrogenated Aluminium Nitride Thin-films Synthesized at Low Temperature.” 2017. Masters Thesis, University of Toronto. Accessed January 16, 2021. http://hdl.handle.net/1807/97123.

MLA Handbook (7th Edition):

Balakrishnan, Sai Shankar. “Optical and Structural Characterization of Hydrogenated Aluminium Nitride Thin-films Synthesized at Low Temperature.” 2017. Web. 16 Jan 2021.

Vancouver:

Balakrishnan SS. Optical and Structural Characterization of Hydrogenated Aluminium Nitride Thin-films Synthesized at Low Temperature. [Internet] [Masters thesis]. University of Toronto; 2017. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1807/97123.

Council of Science Editors:

Balakrishnan SS. Optical and Structural Characterization of Hydrogenated Aluminium Nitride Thin-films Synthesized at Low Temperature. [Masters Thesis]. University of Toronto; 2017. Available from: http://hdl.handle.net/1807/97123


Anna University

12. Puviarasu P. Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;.

Degree: Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers, 2014, Anna University

Group III nitrides such as Indium Nitride Gallium Nitride and Aluminium Nitride are currently the most challenging and technologically important materials which have the potential… (more)

Subjects/Keywords: Aluminium nitride; Chloride vapour phase epitaxy; Epitaxial techniques; Gallium nitride; Gallium nitride epilayers; Indium nitride; Science and humanities

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APA (6th Edition):

P, P. (2014). Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/24564

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

P, Puviarasu. “Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;.” 2014. Thesis, Anna University. Accessed January 16, 2021. http://shodhganga.inflibnet.ac.in/handle/10603/24564.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

P, Puviarasu. “Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;.” 2014. Web. 16 Jan 2021.

Vancouver:

P P. Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;. [Internet] [Thesis]. Anna University; 2014. [cited 2021 Jan 16]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/24564.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

P P. Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;. [Thesis]. Anna University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/24564

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

13. Suresh kumar V. Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;.

Degree: Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers, 2015, Anna University

Gallium nitride GaN is one of the most promising materials newlineamong group III nitrides because its bandgap of 34 eV makes it the best newlinecandidate… (more)

Subjects/Keywords: gallium nitride; nanostructures; science and humanities

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APA (6th Edition):

V, S. k. (2015). Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/41814

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

V, Suresh kumar. “Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;.” 2015. Thesis, Anna University. Accessed January 16, 2021. http://shodhganga.inflibnet.ac.in/handle/10603/41814.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

V, Suresh kumar. “Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;.” 2015. Web. 16 Jan 2021.

Vancouver:

V Sk. Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;. [Internet] [Thesis]. Anna University; 2015. [cited 2021 Jan 16]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/41814.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

V Sk. Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;. [Thesis]. Anna University; 2015. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/41814

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

14. Hartensveld, Matthew. Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires.

Degree: MS, School of Chemistry and Materials Science (COS), 2018, Rochester Institute of Technology

  Nanowire devices are emerging as the replacement technology to planar devices, such as Light Emitting Diodes (LEDs) and Field Effect Transistors (FETs), due to… (more)

Subjects/Keywords: Etching; Gallium nitride; GaN; KOH; Nanowire; Nanowires

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APA (6th Edition):

Hartensveld, M. (2018). Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/9835

Chicago Manual of Style (16th Edition):

Hartensveld, Matthew. “Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires.” 2018. Masters Thesis, Rochester Institute of Technology. Accessed January 16, 2021. https://scholarworks.rit.edu/theses/9835.

MLA Handbook (7th Edition):

Hartensveld, Matthew. “Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires.” 2018. Web. 16 Jan 2021.

Vancouver:

Hartensveld M. Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires. [Internet] [Masters thesis]. Rochester Institute of Technology; 2018. [cited 2021 Jan 16]. Available from: https://scholarworks.rit.edu/theses/9835.

Council of Science Editors:

Hartensveld M. Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires. [Masters Thesis]. Rochester Institute of Technology; 2018. Available from: https://scholarworks.rit.edu/theses/9835


University of Alberta

15. von Hauff, Peter A. Metal Oxide Processing on Gallium Nitride and Silino.

Degree: MS, Department of Electrical and Computer Engineering, 2012, University of Alberta

 III-V Nitrides are intriguing semiconductors for high-power RF amplifiers and other applications. Gallium Nitride has become popular for mm-HFETs due to its material properties. The… (more)

Subjects/Keywords: Atomic Layer Depostion; metal oxides; Gallium Nitride

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APA (6th Edition):

von Hauff, P. A. (2012). Metal Oxide Processing on Gallium Nitride and Silino. (Masters Thesis). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/pz50gw42f

Chicago Manual of Style (16th Edition):

von Hauff, Peter A. “Metal Oxide Processing on Gallium Nitride and Silino.” 2012. Masters Thesis, University of Alberta. Accessed January 16, 2021. https://era.library.ualberta.ca/files/pz50gw42f.

MLA Handbook (7th Edition):

von Hauff, Peter A. “Metal Oxide Processing on Gallium Nitride and Silino.” 2012. Web. 16 Jan 2021.

Vancouver:

von Hauff PA. Metal Oxide Processing on Gallium Nitride and Silino. [Internet] [Masters thesis]. University of Alberta; 2012. [cited 2021 Jan 16]. Available from: https://era.library.ualberta.ca/files/pz50gw42f.

Council of Science Editors:

von Hauff PA. Metal Oxide Processing on Gallium Nitride and Silino. [Masters Thesis]. University of Alberta; 2012. Available from: https://era.library.ualberta.ca/files/pz50gw42f


Anna University

16. Munawar Basha S. Investigations on the magnetic properties of doped gallium nitride ion irradiation studies and nanostructure growth;.

Degree: 2014, Anna University

Gallium nitride (GaN) is by far more extensively studied than the newlineother III-nitrides because of its technological status. It has a wide direct band newlinegap… (more)

Subjects/Keywords: Gallium nitride; magnetic; ion irradiation; nanostructure

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APA (6th Edition):

S, M. B. (2014). Investigations on the magnetic properties of doped gallium nitride ion irradiation studies and nanostructure growth;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/14542

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

S, Munawar Basha. “Investigations on the magnetic properties of doped gallium nitride ion irradiation studies and nanostructure growth;.” 2014. Thesis, Anna University. Accessed January 16, 2021. http://shodhganga.inflibnet.ac.in/handle/10603/14542.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

S, Munawar Basha. “Investigations on the magnetic properties of doped gallium nitride ion irradiation studies and nanostructure growth;.” 2014. Web. 16 Jan 2021.

Vancouver:

S MB. Investigations on the magnetic properties of doped gallium nitride ion irradiation studies and nanostructure growth;. [Internet] [Thesis]. Anna University; 2014. [cited 2021 Jan 16]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/14542.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

S MB. Investigations on the magnetic properties of doped gallium nitride ion irradiation studies and nanostructure growth;. [Thesis]. Anna University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/14542

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

17. Suresh kumar V. Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;.

Degree: Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers, 2015, Anna University

Gallium nitride GaN is one of the most promising materials newlineamong group III nitrides because its bandgap of 34 eV makes it the best newlinecandidate… (more)

Subjects/Keywords: gallium nitride; ion irradiation; science and humanities

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APA (6th Edition):

V, S. k. (2015). Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/34219

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

V, Suresh kumar. “Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;.” 2015. Thesis, Anna University. Accessed January 16, 2021. http://shodhganga.inflibnet.ac.in/handle/10603/34219.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

V, Suresh kumar. “Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;.” 2015. Web. 16 Jan 2021.

Vancouver:

V Sk. Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;. [Internet] [Thesis]. Anna University; 2015. [cited 2021 Jan 16]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/34219.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

V Sk. Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;. [Thesis]. Anna University; 2015. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/34219

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

18. Christian, George. Photoluminescence Studies of InGaN/GaN Quantum Well Structures.

Degree: 2018, University of Manchester

 In this thesis, optical studies of c-plane InGaN/GaN quantum well (QW) structures are presented. The effects of a Si-doped underlayer (UL) on the optical properties… (more)

Subjects/Keywords: photoluminescence; gallium nitride; nitrides; quantum well; semiconductor

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APA (6th Edition):

Christian, G. (2018). Photoluminescence Studies of InGaN/GaN Quantum Well Structures. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549

Chicago Manual of Style (16th Edition):

Christian, George. “Photoluminescence Studies of InGaN/GaN Quantum Well Structures.” 2018. Doctoral Dissertation, University of Manchester. Accessed January 16, 2021. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549.

MLA Handbook (7th Edition):

Christian, George. “Photoluminescence Studies of InGaN/GaN Quantum Well Structures.” 2018. Web. 16 Jan 2021.

Vancouver:

Christian G. Photoluminescence Studies of InGaN/GaN Quantum Well Structures. [Internet] [Doctoral dissertation]. University of Manchester; 2018. [cited 2021 Jan 16]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549.

Council of Science Editors:

Christian G. Photoluminescence Studies of InGaN/GaN Quantum Well Structures. [Doctoral Dissertation]. University of Manchester; 2018. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549


University of Colorado

19. Montague, Joshua R. As-Grown Gallium Nitride Nanowire Electromechanical Resonators.

Degree: PhD, Physics, 2013, University of Colorado

  Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are… (more)

Subjects/Keywords: dissipation; gallium nitride; mems; nanowire; resonator; Physics

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APA (6th Edition):

Montague, J. R. (2013). As-Grown Gallium Nitride Nanowire Electromechanical Resonators. (Doctoral Dissertation). University of Colorado. Retrieved from https://scholar.colorado.edu/phys_gradetds/74

Chicago Manual of Style (16th Edition):

Montague, Joshua R. “As-Grown Gallium Nitride Nanowire Electromechanical Resonators.” 2013. Doctoral Dissertation, University of Colorado. Accessed January 16, 2021. https://scholar.colorado.edu/phys_gradetds/74.

MLA Handbook (7th Edition):

Montague, Joshua R. “As-Grown Gallium Nitride Nanowire Electromechanical Resonators.” 2013. Web. 16 Jan 2021.

Vancouver:

Montague JR. As-Grown Gallium Nitride Nanowire Electromechanical Resonators. [Internet] [Doctoral dissertation]. University of Colorado; 2013. [cited 2021 Jan 16]. Available from: https://scholar.colorado.edu/phys_gradetds/74.

Council of Science Editors:

Montague JR. As-Grown Gallium Nitride Nanowire Electromechanical Resonators. [Doctoral Dissertation]. University of Colorado; 2013. Available from: https://scholar.colorado.edu/phys_gradetds/74


University of Bristol

20. Rackauskas, Ben. The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability.

Degree: PhD, 2019, University of Bristol

 Highly efficient power conversion beyond the capabilities of silicon electronics is required to meet the growing global demand for power and to enable emerging technologies.… (more)

Subjects/Keywords: 530; Gallium Nitride; Reliability; Leakage mechanisms

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APA (6th Edition):

Rackauskas, B. (2019). The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability. (Doctoral Dissertation). University of Bristol. Retrieved from http://hdl.handle.net/1983/c126d16b-d8fa-4526-8836-131e6c2bd2ab

Chicago Manual of Style (16th Edition):

Rackauskas, Ben. “The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability.” 2019. Doctoral Dissertation, University of Bristol. Accessed January 16, 2021. http://hdl.handle.net/1983/c126d16b-d8fa-4526-8836-131e6c2bd2ab.

MLA Handbook (7th Edition):

Rackauskas, Ben. “The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability.” 2019. Web. 16 Jan 2021.

Vancouver:

Rackauskas B. The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability. [Internet] [Doctoral dissertation]. University of Bristol; 2019. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1983/c126d16b-d8fa-4526-8836-131e6c2bd2ab.

Council of Science Editors:

Rackauskas B. The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability. [Doctoral Dissertation]. University of Bristol; 2019. Available from: http://hdl.handle.net/1983/c126d16b-d8fa-4526-8836-131e6c2bd2ab

21. Johansson, Linus. Evaluation of graphene as a transparent electrode in GaN-based LEDs by PECVD synthesis of graphene directly on GaN.

Degree: Physics, 2016, Umeå University

  A transparent conductive electrode (TCE) is an important component in many of our modern optoelectronic devices like photovoltaics, light emitting diodes and touch screens.… (more)

Subjects/Keywords: PECVD; graphene; transparent electrode; gallium nitride; LED

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APA (6th Edition):

Johansson, L. (2016). Evaluation of graphene as a transparent electrode in GaN-based LEDs by PECVD synthesis of graphene directly on GaN. (Thesis). Umeå University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-120731

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Johansson, Linus. “Evaluation of graphene as a transparent electrode in GaN-based LEDs by PECVD synthesis of graphene directly on GaN.” 2016. Thesis, Umeå University. Accessed January 16, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-120731.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Johansson, Linus. “Evaluation of graphene as a transparent electrode in GaN-based LEDs by PECVD synthesis of graphene directly on GaN.” 2016. Web. 16 Jan 2021.

Vancouver:

Johansson L. Evaluation of graphene as a transparent electrode in GaN-based LEDs by PECVD synthesis of graphene directly on GaN. [Internet] [Thesis]. Umeå University; 2016. [cited 2021 Jan 16]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-120731.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Johansson L. Evaluation of graphene as a transparent electrode in GaN-based LEDs by PECVD synthesis of graphene directly on GaN. [Thesis]. Umeå University; 2016. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-120731

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

22. Zou, Xinbo. Growth, Fabrication and characterization of InGaN/GaN-based blue, green and yellow LEDs on Si with nanotechnology.

Degree: 2013, Hong Kong University of Science and Technology

 InGaN/GaN-based light emitting diodes (LEDs) grown on Si have generated intensiveresearch interest due to silicon’s low cost, large size availability and good thermal conductivity. However,… (more)

Subjects/Keywords: Light emitting diodes ; Nanostructured materials ; Gallium nitride

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APA (6th Edition):

Zou, X. (2013). Growth, Fabrication and characterization of InGaN/GaN-based blue, green and yellow LEDs on Si with nanotechnology. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-8142 ; https://doi.org/10.14711/thesis-b1214705 ; http://repository.ust.hk/ir/bitstream/1783.1-8142/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zou, Xinbo. “Growth, Fabrication and characterization of InGaN/GaN-based blue, green and yellow LEDs on Si with nanotechnology.” 2013. Thesis, Hong Kong University of Science and Technology. Accessed January 16, 2021. http://repository.ust.hk/ir/Record/1783.1-8142 ; https://doi.org/10.14711/thesis-b1214705 ; http://repository.ust.hk/ir/bitstream/1783.1-8142/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zou, Xinbo. “Growth, Fabrication and characterization of InGaN/GaN-based blue, green and yellow LEDs on Si with nanotechnology.” 2013. Web. 16 Jan 2021.

Vancouver:

Zou X. Growth, Fabrication and characterization of InGaN/GaN-based blue, green and yellow LEDs on Si with nanotechnology. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2013. [cited 2021 Jan 16]. Available from: http://repository.ust.hk/ir/Record/1783.1-8142 ; https://doi.org/10.14711/thesis-b1214705 ; http://repository.ust.hk/ir/bitstream/1783.1-8142/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zou X. Growth, Fabrication and characterization of InGaN/GaN-based blue, green and yellow LEDs on Si with nanotechnology. [Thesis]. Hong Kong University of Science and Technology; 2013. Available from: http://repository.ust.hk/ir/Record/1783.1-8142 ; https://doi.org/10.14711/thesis-b1214705 ; http://repository.ust.hk/ir/bitstream/1783.1-8142/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

23. Yuan, Li. Process modeling and device technology of GaN normally-off power transistors.

Degree: 2011, Hong Kong University of Science and Technology

 The wide bandgap GaN-based transistors are attractive for power electronics applications owing to the superior intrinsic properties of the materials. In addition to the breakdown… (more)

Subjects/Keywords: Power transistors ; Gallium nitride ; Semiconductors  – Materials

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APA (6th Edition):

Yuan, L. (2011). Process modeling and device technology of GaN normally-off power transistors. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-7195 ; https://doi.org/10.14711/thesis-b1146196 ; http://repository.ust.hk/ir/bitstream/1783.1-7195/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yuan, Li. “Process modeling and device technology of GaN normally-off power transistors.” 2011. Thesis, Hong Kong University of Science and Technology. Accessed January 16, 2021. http://repository.ust.hk/ir/Record/1783.1-7195 ; https://doi.org/10.14711/thesis-b1146196 ; http://repository.ust.hk/ir/bitstream/1783.1-7195/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yuan, Li. “Process modeling and device technology of GaN normally-off power transistors.” 2011. Web. 16 Jan 2021.

Vancouver:

Yuan L. Process modeling and device technology of GaN normally-off power transistors. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2011. [cited 2021 Jan 16]. Available from: http://repository.ust.hk/ir/Record/1783.1-7195 ; https://doi.org/10.14711/thesis-b1146196 ; http://repository.ust.hk/ir/bitstream/1783.1-7195/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yuan L. Process modeling and device technology of GaN normally-off power transistors. [Thesis]. Hong Kong University of Science and Technology; 2011. Available from: http://repository.ust.hk/ir/Record/1783.1-7195 ; https://doi.org/10.14711/thesis-b1146196 ; http://repository.ust.hk/ir/bitstream/1783.1-7195/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

24. Lu, Jun-yong. Mechanical characterization of GaN epitaxial thin films.

Degree: 2011, Hong Kong University of Science and Technology

 In this work, epitaxial GaN thin films were mechanically characterized. Residual stresses of the films were systematically investigated with micro-Raman spectroscopy and their elastic-plastic properties… (more)

Subjects/Keywords: Thin films  – Mechanical properties ; Gallium nitride ; Epitaxy

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APA (6th Edition):

Lu, J. (2011). Mechanical characterization of GaN epitaxial thin films. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-7360 ; https://doi.org/10.14711/thesis-b1155692 ; http://repository.ust.hk/ir/bitstream/1783.1-7360/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, Jun-yong. “Mechanical characterization of GaN epitaxial thin films.” 2011. Thesis, Hong Kong University of Science and Technology. Accessed January 16, 2021. http://repository.ust.hk/ir/Record/1783.1-7360 ; https://doi.org/10.14711/thesis-b1155692 ; http://repository.ust.hk/ir/bitstream/1783.1-7360/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, Jun-yong. “Mechanical characterization of GaN epitaxial thin films.” 2011. Web. 16 Jan 2021.

Vancouver:

Lu J. Mechanical characterization of GaN epitaxial thin films. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2011. [cited 2021 Jan 16]. Available from: http://repository.ust.hk/ir/Record/1783.1-7360 ; https://doi.org/10.14711/thesis-b1155692 ; http://repository.ust.hk/ir/bitstream/1783.1-7360/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu J. Mechanical characterization of GaN epitaxial thin films. [Thesis]. Hong Kong University of Science and Technology; 2011. Available from: http://repository.ust.hk/ir/Record/1783.1-7360 ; https://doi.org/10.14711/thesis-b1155692 ; http://repository.ust.hk/ir/bitstream/1783.1-7360/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Tennessee – Knoxville

25. Bouler, Douglas Wayne, III. GAN-BASED POINT-OF-LOAD CONVERTERS FOR DATA CENTER APPLICATIONS.

Degree: MS, Electrical Engineering, 2018, University of Tennessee – Knoxville

 The growth of the information technology sector has increased demand for high-density, high-efficiency point-of-load (POL) converters. As industry continues to demand an increase in server… (more)

Subjects/Keywords: Gallium-Nitride; GaN; POL; power density

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APA (6th Edition):

Bouler, Douglas Wayne, I. (2018). GAN-BASED POINT-OF-LOAD CONVERTERS FOR DATA CENTER APPLICATIONS. (Thesis). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_gradthes/5341

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bouler, Douglas Wayne, III. “GAN-BASED POINT-OF-LOAD CONVERTERS FOR DATA CENTER APPLICATIONS.” 2018. Thesis, University of Tennessee – Knoxville. Accessed January 16, 2021. https://trace.tennessee.edu/utk_gradthes/5341.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bouler, Douglas Wayne, III. “GAN-BASED POINT-OF-LOAD CONVERTERS FOR DATA CENTER APPLICATIONS.” 2018. Web. 16 Jan 2021.

Vancouver:

Bouler, Douglas Wayne I. GAN-BASED POINT-OF-LOAD CONVERTERS FOR DATA CENTER APPLICATIONS. [Internet] [Thesis]. University of Tennessee – Knoxville; 2018. [cited 2021 Jan 16]. Available from: https://trace.tennessee.edu/utk_gradthes/5341.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bouler, Douglas Wayne I. GAN-BASED POINT-OF-LOAD CONVERTERS FOR DATA CENTER APPLICATIONS. [Thesis]. University of Tennessee – Knoxville; 2018. Available from: https://trace.tennessee.edu/utk_gradthes/5341

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Bristol

26. Rackauskas, Ben. The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability.

Degree: PhD, 2019, University of Bristol

 Highly efficient power conversion beyond the capabilities of silicon electronics is required to meet the growing global demand for power and to enable emerging technologies.… (more)

Subjects/Keywords: 530; Gallium Nitride; Reliability; Leakage mechanisms

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APA (6th Edition):

Rackauskas, B. (2019). The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability. (Doctoral Dissertation). University of Bristol. Retrieved from https://research-information.bris.ac.uk/en/studentTheses/c126d16b-d8fa-4526-8836-131e6c2bd2ab ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.787682

Chicago Manual of Style (16th Edition):

Rackauskas, Ben. “The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability.” 2019. Doctoral Dissertation, University of Bristol. Accessed January 16, 2021. https://research-information.bris.ac.uk/en/studentTheses/c126d16b-d8fa-4526-8836-131e6c2bd2ab ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.787682.

MLA Handbook (7th Edition):

Rackauskas, Ben. “The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability.” 2019. Web. 16 Jan 2021.

Vancouver:

Rackauskas B. The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability. [Internet] [Doctoral dissertation]. University of Bristol; 2019. [cited 2021 Jan 16]. Available from: https://research-information.bris.ac.uk/en/studentTheses/c126d16b-d8fa-4526-8836-131e6c2bd2ab ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.787682.

Council of Science Editors:

Rackauskas B. The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability. [Doctoral Dissertation]. University of Bristol; 2019. Available from: https://research-information.bris.ac.uk/en/studentTheses/c126d16b-d8fa-4526-8836-131e6c2bd2ab ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.787682


Rutgers University

27. Jumaah, Omar Dhannoon, 1983-. Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process.

Degree: PhD, Mechanical and Aerospace Engineering, 2019, Rutgers University

Gallium nitride (GaN) thin film is an attractive material for manufacturing optoelectronic device applications due to its wide band-gap and superb optoelectronic performance. The reliability… (more)

Subjects/Keywords: Gallium nitride; Metal organic chemical vapor deposition

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jumaah, Omar Dhannoon, 1. (2019). Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process. (Doctoral Dissertation). Rutgers University. Retrieved from https://rucore.libraries.rutgers.edu/rutgers-lib/61775/

Chicago Manual of Style (16th Edition):

Jumaah, Omar Dhannoon, 1983-. “Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process.” 2019. Doctoral Dissertation, Rutgers University. Accessed January 16, 2021. https://rucore.libraries.rutgers.edu/rutgers-lib/61775/.

MLA Handbook (7th Edition):

Jumaah, Omar Dhannoon, 1983-. “Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process.” 2019. Web. 16 Jan 2021.

Vancouver:

Jumaah, Omar Dhannoon 1. Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process. [Internet] [Doctoral dissertation]. Rutgers University; 2019. [cited 2021 Jan 16]. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/61775/.

Council of Science Editors:

Jumaah, Omar Dhannoon 1. Experimental and numerical study on manufacturing gallium nitride thin films in MOCVD process. [Doctoral Dissertation]. Rutgers University; 2019. Available from: https://rucore.libraries.rutgers.edu/rutgers-lib/61775/


King Abdullah University of Science and Technology

28. Ibrahim, Youssef H. Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices.

Degree: 2013, King Abdullah University of Science and Technology

 Group III-nitride semiconductors possess unique properties, which make them versatile materials for suiting many applications. Structuring vertical and exceptionally smooth GaN profiles is crucial for… (more)

Subjects/Keywords: Gallium; Nitride; Inductively; Coupled; Plasma; Facets

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APA (6th Edition):

Ibrahim, Y. H. (2013). Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices. (Thesis). King Abdullah University of Science and Technology. Retrieved from http://hdl.handle.net/10754/292971

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ibrahim, Youssef H. “Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices.” 2013. Thesis, King Abdullah University of Science and Technology. Accessed January 16, 2021. http://hdl.handle.net/10754/292971.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ibrahim, Youssef H. “Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices.” 2013. Web. 16 Jan 2021.

Vancouver:

Ibrahim YH. Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices. [Internet] [Thesis]. King Abdullah University of Science and Technology; 2013. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10754/292971.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ibrahim YH. Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices. [Thesis]. King Abdullah University of Science and Technology; 2013. Available from: http://hdl.handle.net/10754/292971

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Utah

29. Anderson, Kathy Perkins Jenkins. Characterizing organometallic-vapor-phase-epitaxy-grown indium gallium nitride islands on gallium nitride for light emitting diode applications.

Degree: MS, Materials Science & Engineering, 2011, University of Utah

 The indium-gallium-nitride on gallium-nitride (InGaN/GaN) materials system is a promising candidate for providing a high intensity, high efficiency solution to the yet unsolved problem of… (more)

Subjects/Keywords: InGaN; Island; LED; Quantum dots; Self assembly; Strain; Indium gallium nitride islands; Gallium nitride

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APA (6th Edition):

Anderson, K. P. J. (2011). Characterizing organometallic-vapor-phase-epitaxy-grown indium gallium nitride islands on gallium nitride for light emitting diode applications. (Masters Thesis). University of Utah. Retrieved from http://content.lib.utah.edu/cdm/singleitem/collection/etd3/id/541/rec/445

Chicago Manual of Style (16th Edition):

Anderson, Kathy Perkins Jenkins. “Characterizing organometallic-vapor-phase-epitaxy-grown indium gallium nitride islands on gallium nitride for light emitting diode applications.” 2011. Masters Thesis, University of Utah. Accessed January 16, 2021. http://content.lib.utah.edu/cdm/singleitem/collection/etd3/id/541/rec/445.

MLA Handbook (7th Edition):

Anderson, Kathy Perkins Jenkins. “Characterizing organometallic-vapor-phase-epitaxy-grown indium gallium nitride islands on gallium nitride for light emitting diode applications.” 2011. Web. 16 Jan 2021.

Vancouver:

Anderson KPJ. Characterizing organometallic-vapor-phase-epitaxy-grown indium gallium nitride islands on gallium nitride for light emitting diode applications. [Internet] [Masters thesis]. University of Utah; 2011. [cited 2021 Jan 16]. Available from: http://content.lib.utah.edu/cdm/singleitem/collection/etd3/id/541/rec/445.

Council of Science Editors:

Anderson KPJ. Characterizing organometallic-vapor-phase-epitaxy-grown indium gallium nitride islands on gallium nitride for light emitting diode applications. [Masters Thesis]. University of Utah; 2011. Available from: http://content.lib.utah.edu/cdm/singleitem/collection/etd3/id/541/rec/445


Virginia Commonwealth University

30. Li, Xing. Efficiency droop mitigation and quantum efficiency enhancement for nitride Light-Emitting Diodes.

Degree: PhD, Engineering, 2012, Virginia Commonwealth University

 In the past decade, GaN-based nitrides have had a considerable impact in solid state lighting and high speed high power devices. InGaN-based LEDs have been… (more)

Subjects/Keywords: gallium nitride; indium gallium nitride; light emitting diodes; efficiency droop; quantum efficiency; Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, X. (2012). Efficiency droop mitigation and quantum efficiency enhancement for nitride Light-Emitting Diodes. (Doctoral Dissertation). Virginia Commonwealth University. Retrieved from https://doi.org/10.25772/V6FM-0B17 ; https://scholarscompass.vcu.edu/etd/395

Chicago Manual of Style (16th Edition):

Li, Xing. “Efficiency droop mitigation and quantum efficiency enhancement for nitride Light-Emitting Diodes.” 2012. Doctoral Dissertation, Virginia Commonwealth University. Accessed January 16, 2021. https://doi.org/10.25772/V6FM-0B17 ; https://scholarscompass.vcu.edu/etd/395.

MLA Handbook (7th Edition):

Li, Xing. “Efficiency droop mitigation and quantum efficiency enhancement for nitride Light-Emitting Diodes.” 2012. Web. 16 Jan 2021.

Vancouver:

Li X. Efficiency droop mitigation and quantum efficiency enhancement for nitride Light-Emitting Diodes. [Internet] [Doctoral dissertation]. Virginia Commonwealth University; 2012. [cited 2021 Jan 16]. Available from: https://doi.org/10.25772/V6FM-0B17 ; https://scholarscompass.vcu.edu/etd/395.

Council of Science Editors:

Li X. Efficiency droop mitigation and quantum efficiency enhancement for nitride Light-Emitting Diodes. [Doctoral Dissertation]. Virginia Commonwealth University; 2012. Available from: https://doi.org/10.25772/V6FM-0B17 ; https://scholarscompass.vcu.edu/etd/395

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