subject:(Low K)

NSYSU

1. Chen, Chi-Wen. Study On Integration of Porous Low Dielectric Constant Material.

Degree: Master, Physics, 2001, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-092056

► As IC technology moves into the deep submicrometer regime in high performance ULSI circuits, it is required to decrease the metal pitch and to increase… (more)

▼ As IC technology moves into the deep submicrometer regime in high performance ULSI circuits, it is required to decrease the metal pitch and to increase the number of metal layers for interconnect to accommodate the increased packing density and functional complexity. But the signal propagation delay in the interconnect becomes an appreciable fraction of the total time delay. Use of low dielectric constant material (low-k) as the intermetal dielectric (IMD) results in low inter-line capacitance and therefore high performance in speed, low power dissipation, and low cross-talk noise. During various low dielectric materials, porous silica film is one of the possible candidates with an inherent low dielectric constant. In this thesis, the intrinsic properties such as fundamental physical, electrical, thermal stability of the spin on glass (SOG) have been investigated. We also study the properties of the SOG film with various plasma and treatments. An inherent low dielectric constant of 1.9 is achieved for high porosity of the porous silica film and the leakage current density keep at a level of ~10-9 A/cm2 at 1MV/cm electric field strength. After O2 plasma treatment, the Si-C and C-H bonds of the film are almost eliminated, thus the dielectric constant and leakage current are rapid increase than that of those untreated films. We find that H2 plasma can passivate the porous silica surface so that the leakage current can be kept at acceptable range, however, the dielectric constant increase slightly. Moreover, the etching issues were also investigated in this study. The mask undercutting on sidewall was observed due to the spontaneous reaction between the porous silca film and fluorocarnbon plasma. Therefore, H2 plasma treatment was provided to suppress this phenomenon. In this study, the intrinsic properties such as fundamental physical, electrical, and thermal properties of the porous silica have been investigated. The compatibility of the porous silica with integration processes also has been studied comprehensively. We have proposed H2 plasma treatments to improve the dielectric properties of porous silica after photoresist removal. Material and electrical analyses were used to interpret these improvements. Advisors/Committee Members: Jun-Yuan Zeng (chair), P. T. Liu (chair), Water (chair), J. T. Sheu (chair), T. C. Chang (committee member).

Subjects/Keywords: low-k

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APA (6^th Edition):

Chen, C. (2001). Study On Integration of Porous Low Dielectric Constant Material. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-092056

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Chen, Chi-Wen. “Study On Integration of Porous Low Dielectric Constant Material.” 2001. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-092056.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Chen, Chi-Wen. “Study On Integration of Porous Low Dielectric Constant Material.” 2001. Web. 16 Jan 2021.

Vancouver:

Chen C. Study On Integration of Porous Low Dielectric Constant Material. [Internet] [Thesis]. NSYSU; 2001. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-092056.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen C. Study On Integration of Porous Low Dielectric Constant Material. [Thesis]. NSYSU; 2001. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-092056

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Cornell University

2. Sun, Zeming. Mechanical, Electrical And Chemical Effect Of Laser Spike Annealing On Novel Porous Low Dielectric Constant Ethyl-Bridged Organosilane.

Degree: M.S., Materials Science and Engineering, Materials Science and Engineering, 2014, Cornell University

URL: http://hdl.handle.net/1813/38963

► Scaling of semiconductor devices has also driven a need for the improvement of interconnects. As feature sizes became smaller, the parasitic capacitance increased between wires… (more)

Subjects/Keywords: Low k materials; LSA

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APA (6^th Edition):

Sun, Z. (2014). Mechanical, Electrical And Chemical Effect Of Laser Spike Annealing On Novel Porous Low Dielectric Constant Ethyl-Bridged Organosilane. (Masters Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/38963

Chicago Manual of Style (16^th Edition):

Sun, Zeming. “Mechanical, Electrical And Chemical Effect Of Laser Spike Annealing On Novel Porous Low Dielectric Constant Ethyl-Bridged Organosilane.” 2014. Masters Thesis, Cornell University. Accessed January 16, 2021. http://hdl.handle.net/1813/38963.

MLA Handbook (7^th Edition):

Sun, Zeming. “Mechanical, Electrical And Chemical Effect Of Laser Spike Annealing On Novel Porous Low Dielectric Constant Ethyl-Bridged Organosilane.” 2014. Web. 16 Jan 2021.

Vancouver:

Sun Z. Mechanical, Electrical And Chemical Effect Of Laser Spike Annealing On Novel Porous Low Dielectric Constant Ethyl-Bridged Organosilane. [Internet] [Masters thesis]. Cornell University; 2014. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1813/38963.

Council of Science Editors:

Sun Z. Mechanical, Electrical And Chemical Effect Of Laser Spike Annealing On Novel Porous Low Dielectric Constant Ethyl-Bridged Organosilane. [Masters Thesis]. Cornell University; 2014. Available from: http://hdl.handle.net/1813/38963

3. Bêche, Elodie. Etude des collages directs hydrophiles mettant en jeu des couches diélectriques : Direct bonding study with dielectric bonding layers.

Degree: Docteur es, Physique des matériaux, 2017, Université Grenoble Alpes (ComUE)

URL: http://www.theses.fr/2017GREAY064

►

Le collage direct consiste à l’adhésion spontanée dès température ambiante de deux surfaces sans ajout de matière polymère à l’interface de collage. Réalisable sous vide… (more)

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Le collage direct consiste à l’adhésion spontanée dès température ambiante de deux surfaces sans ajout de matière polymère à l’interface de collage. Réalisable sous vide ou à pression atmosphérique, il possède l’avantage de permettre l’empilement de matériaux monocristallins sur des matériaux amorphes, parfaitement illustrée, par exemple, avec la fabrication de substrats SOI (silicium sur isolant) couramment utilisé de nos jours en microélectronique et/ou en microtechnologie. La course à la performance et/ou pluridisciplinarité des circuits électroniques nécessite la maîtrise de ce procédé pour un plus large panel de matériaux. La compréhension des mécanismes physico-chimique à l’interface de collage devient alors primordiale. L’objectif de cette thèse est d’étudier les mécanismes mis en jeu dans le collage direct hydrophile de couches diélectriques autres que l’oxyde de silicium : l’oxyde d’aluminium, le nitrure de silicium et un ultra-low k.Dans cette étude, des procédés de collage direct hydrophile de films diélectriques déposés sont développés avec différentes préparations de surface. L’évolution mécanique et chimique de l’interface de collage, après différents traitements thermiques, est analysé via différentes techniques de caractérisation comme la mesure anhydre d’énergie de collage, la microscopie acoustique, la réflectivité des rayons X et la spectroscopie infrarouge. Chaque matériau démontre un comportement particulier une fois confiné à l’interface de collage par rapport à son comportement en surface libre. Tout au long de cette thèse, le lien entre collage et surface libre a permis d’établir les mécanismes de collages des différents matériaux étudiés et d’énoncer des recommandations pour obtenir des collages de qualité.

Direct wafer bonding refers to the spontaneous establishment of attractive forces between two surfaces at ambient temperature without any additional polymer material. Available at ambient pressure or under vacuum, this technology is attractive for monocrystal-amorphous stacks, perfectly illustrated by SOI (Silicon On Insulator) substrate elaboration widely used nowadays in microelectronics or microtechnologies. Electronic device performance and multidisciplinarity needs require this technology on many different materials. In this context, a precis understanding of bonding mechanism is paramount. The aim of this work is to study the hydrophilic bonding mechanisms for alumina, nitride silicon and ultra-low k thin films.In this study, hydrophilic bonding of deposited dielectric films prepared by chemical treatment were analyzed as function of post-bonding annealing temperature. Chemical and mechanical bonding interface closure has been analyzed from mechanical and chemical point of view via several characterization techniques: anhydrous bonding energy measurement, acoustic microscopy, X-Ray reflectivity and infrared spectroscopy. Each material demonstrates interesting behaviors embedded at the bonding interface compared to the deposited film free surfaces. Throughout the studies,…

Advisors/Committee Members: Rieutord, François (thesis director), Fournel, Frank (thesis director), Larrey, Vincent (thesis director).

Subjects/Keywords: Collage; Direct; Low k; High k; Hydrophilie; Diélectrique; Bonding; Direct; Low k; High k; Hydrophilic; Dielectric; 530

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APA (6^th Edition):

Bêche, E. (2017). Etude des collages directs hydrophiles mettant en jeu des couches diélectriques : Direct bonding study with dielectric bonding layers. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2017GREAY064

Chicago Manual of Style (16^th Edition):

Bêche, Elodie. “Etude des collages directs hydrophiles mettant en jeu des couches diélectriques : Direct bonding study with dielectric bonding layers.” 2017. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed January 16, 2021. http://www.theses.fr/2017GREAY064.

MLA Handbook (7^th Edition):

Bêche, Elodie. “Etude des collages directs hydrophiles mettant en jeu des couches diélectriques : Direct bonding study with dielectric bonding layers.” 2017. Web. 16 Jan 2021.

Vancouver:

Bêche E. Etude des collages directs hydrophiles mettant en jeu des couches diélectriques : Direct bonding study with dielectric bonding layers. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2017. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2017GREAY064.

Council of Science Editors:

Bêche E. Etude des collages directs hydrophiles mettant en jeu des couches diélectriques : Direct bonding study with dielectric bonding layers. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2017. Available from: http://www.theses.fr/2017GREAY064

Penn State University

4. Bittel, Brad. STUDY OF DEFECT STRUCTURE AND ELECTRICAL TRANSPORT IN BACK END OF LINE DIELECTRICS AND SIC MOSFETS .

Degree: 2011, Penn State University

URL: https://submit-etda.libraries.psu.edu/catalog/12636

► SiC MOSFETs show great potential for use in high power and high temperature environments. However, the technology is still in its infancy and is limited… (more)

Subjects/Keywords: magnetic resonance; EPR; low-k; BEOL; SiC

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APA (6^th Edition):

Bittel, B. (2011). STUDY OF DEFECT STRUCTURE AND ELECTRICAL TRANSPORT IN BACK END OF LINE DIELECTRICS AND SIC MOSFETS . (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/12636

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Bittel, Brad. “STUDY OF DEFECT STRUCTURE AND ELECTRICAL TRANSPORT IN BACK END OF LINE DIELECTRICS AND SIC MOSFETS .” 2011. Thesis, Penn State University. Accessed January 16, 2021. https://submit-etda.libraries.psu.edu/catalog/12636.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Bittel, Brad. “STUDY OF DEFECT STRUCTURE AND ELECTRICAL TRANSPORT IN BACK END OF LINE DIELECTRICS AND SIC MOSFETS .” 2011. Web. 16 Jan 2021.

Vancouver:

Bittel B. STUDY OF DEFECT STRUCTURE AND ELECTRICAL TRANSPORT IN BACK END OF LINE DIELECTRICS AND SIC MOSFETS . [Internet] [Thesis]. Penn State University; 2011. [cited 2021 Jan 16]. Available from: https://submit-etda.libraries.psu.edu/catalog/12636.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bittel B. STUDY OF DEFECT STRUCTURE AND ELECTRICAL TRANSPORT IN BACK END OF LINE DIELECTRICS AND SIC MOSFETS . [Thesis]. Penn State University; 2011. Available from: https://submit-etda.libraries.psu.edu/catalog/12636

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Université Montpellier II

5. Lépinay, Matthieu J. Impact des chimies de nettoyage et des traitements plasma sur les matériaux diélectriques à basse permittivité : Impact of plasma treatments and cleaning chemistries on porous materials with very low permittivity.

Degree: Docteur es, Chimie et physicochimie des matériaux, 2014, Université Montpellier II

URL: http://www.theses.fr/2014MON20097

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Nous présentons dans ce travail l'impact du procédé de fabrication d'un circuit intégré (nœud technologique 28 nm) sur le matériau diélectrique poreux utilisé pour isoler… (more)

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Nous présentons dans ce travail l'impact du procédé de fabrication d'un circuit intégré (nœud technologique 28 nm) sur le matériau diélectrique poreux utilisé pour isoler les interconnexions des transistors. Notre étude est en particulier axée sur la diffusion d'espèces (chimies de nettoyage, eau/humidité, molécules de gaz) dans le réseau poreux. Pour décorréler les effets "chimiques" d'affinité entre la surface et les molécules considérées et "physiques" de taille des pores, plusieurs techniques de caractérisation complémentaires sont utilisées. Les modifications chimiques sont d'abord caractérisées en surface par XPS et angle de goutte. Le FTIR est ensuite utilisé pour sonder l'épaisseur de la couche et le ToF-SIMS pour obtenir un profil en profondeur des modifications. L'analyse de la microstructure par RMN du solide permet de mettre en évidence les variations de la réticulation du squelette silicique. La porosimétrie par EP, PALS et GISAXS révèle des incohérences entre ces techniques reposant sur l'adsorption de gaz d'une part, et la diffusion de rayons X et l'annihilation de positrons d'autre part. La modélisation numérique des isothermes d'adsorption de gaz nous permettent de tenir compte des interactions sonde-surface et de réconcilier les résultats. Ainsi nous mesurons une augmentation de la taille des pores par les plasmas de gravure, et une diminution de taille des pores après nettoyage HF, qui correspondent aux modifications chimiques en termes de tailles des groupements. Finalement, ces moyens de caractérisation montrent que des traitements de silylation peuvent restaurer efficacement les propriétés diélectriques et physico-chimiques des matériaux low-k.

We report in this work the impact of the manufacturing process of an integrated circuit (28 nm technology node) on the porous dielectric material used to isolate the interconnections of the transistors. Our study focuses in particular on the diffusion of species (cleaning chemistries, water/moisture, gas molecules) in the porous network. To decorrelate "chemical" effects of affinity between the molecules and the surface and "physical" effects due to pore size, several complementary techniques are used for further characterization. Chemical changes are first characterized at the surface by XPS and drop contact angle. FTIR is then used to probe the whole thickness of the layer and the ToF-SIMS to obtain a depth profiled characterization. A microstructure analysis by solid-state NMR enables to highlight the changes in cross-linking of the silicon skeleton. A porosimetric study by EP, PALS and GISAXS reveals inconsistencies between these techniques based on the adsorption of gases on the one hand, and X-ray scattering and positron annihilation of the other. Numerical modeling of gas adsorption isotherms enables us to consider interactions probe surface and reconcile the results. Thus we measured an increase of the pore size by plasma etching, and a decrease in pore size after HF cleaning, which correspond to the characterized chemical changes in terms of…

Advisors/Committee Members: Ayral, André (thesis director), Rouessac, Vincent (thesis director).

Subjects/Keywords: Plasma; Chimie; Low-K; Microélectronique; Nano; Poreux; Plasma; Chemistry; Low-K; Microelectronics; Nano; Porous

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Lépinay, M. J. (2014). Impact des chimies de nettoyage et des traitements plasma sur les matériaux diélectriques à basse permittivité : Impact of plasma treatments and cleaning chemistries on porous materials with very low permittivity. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2014MON20097

Chicago Manual of Style (16^th Edition):

Lépinay, Matthieu J. “Impact des chimies de nettoyage et des traitements plasma sur les matériaux diélectriques à basse permittivité : Impact of plasma treatments and cleaning chemistries on porous materials with very low permittivity.” 2014. Doctoral Dissertation, Université Montpellier II. Accessed January 16, 2021. http://www.theses.fr/2014MON20097.

MLA Handbook (7^th Edition):

Lépinay, Matthieu J. “Impact des chimies de nettoyage et des traitements plasma sur les matériaux diélectriques à basse permittivité : Impact of plasma treatments and cleaning chemistries on porous materials with very low permittivity.” 2014. Web. 16 Jan 2021.

Vancouver:

Lépinay MJ. Impact des chimies de nettoyage et des traitements plasma sur les matériaux diélectriques à basse permittivité : Impact of plasma treatments and cleaning chemistries on porous materials with very low permittivity. [Internet] [Doctoral dissertation]. Université Montpellier II; 2014. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2014MON20097.

Council of Science Editors:

Lépinay MJ. Impact des chimies de nettoyage et des traitements plasma sur les matériaux diélectriques à basse permittivité : Impact of plasma treatments and cleaning chemistries on porous materials with very low permittivity. [Doctoral Dissertation]. Université Montpellier II; 2014. Available from: http://www.theses.fr/2014MON20097

6. Naas, Abdelkrim. Etude de l'oxyde de silicium implanté krypton ou xénon : évolution de la constante diélectrique. : Study of Silica implanted krypton or xenon : evolution of dielectric constant.

Degree: Docteur es, Physique des matériaux, 2010, Université d'Orléans

URL: http://www.theses.fr/2010ORLE2059

►

Ce travail de thèse consiste en une étude approfondie du comportement de l'oxyde de silicium implanté Kr ou Xe pour son application comme matériau à… (more)

▼

Ce travail de thèse consiste en une étude approfondie du comportement de l'oxyde de silicium implanté Kr ou Xe pour son application comme matériau à faible constante diélectrique. Deux volets sont examinés: une étude structurale par l'utilisation de plusieurs techniques (RBS, PL, MET et PAS) et une étude de la variation de la constante diélectrique par utilisation de la spectroscopie IR avec le développement d'un modèle de la fonction diélectrique et des mesures C(V). Pour la caractérisation structurale, les principaux résultats confirment pour le cas du Kr, une distribution homogène de ce dernier jusqu'à 400°C. Pour le cas du Xe, le profil de distribution en profondeur de Xe est quasi-gaussien. Le Xe reste stable dans le SiO2 jusqu'à 900°C et désorbe à 1100°C et les bulles se transforment en cavités. Les bulles sont formées au niveau du pic des lacunes (p(lacunes)R). Alors qu’en l’absence des bulles, le Xe se localise à la profondeur de fin de parcours du Xe (RpXe) calculée par SRIM. On note aussi la présence de défauts chargés négativement et des défauts paramagnétiques E'. Ces défauts négatifs disparaissent après un recuit à 750°C. La forme des bulles, pour les deux cas Xe et Kr, est influencée par la position de l'interface SiO2/Si; sans doute à cause de la différence des modules d'Young des deux matrices. L'IR et les mesures C(V) ont permis de montrer que l'implantation des deux gaz fait diminuer la valeur de la constante diélectrique jusqu'à 2.8 pour le cas Kr et entre 1.8 et 2.4 pour le cas Xe. La cohérence des résultats obtenus par les deux techniques montrent bien que ces deux gaz rares peuvent être utilisés pour la réalisation de SiO2 de faible constante diélectrique avec un impact plus important quand le Xe est utilisé. Cette étude a permis aussi de montrer la contribution de la polarisabilité et de la porosité sur la réduction de la valeur de la constante diélectrique du SiO2 implanté.

This thesis aims to get a deep insight of Kr and Xe-implanted amorphous SiO2 for its possible application as low-k material. This work is divided in two parts: Two sides are examined: a structural study by using several techniques (RBS, PL, MET et PAS) and investigation of the evolution of the dielectric constant by using IR spectroscopy with a dielectric function model developing and C-V measurements. From structural characterization, our main results confirm, in the case of Kr implantation, an homogeneous distribution for temperature up to 400°C. For Xe, the distribution profile is quasi-gaussian. Xe remains stable in SiO2 then desorbs completely at 1100°C. We demonstrated that Xe-bubbles are located at the projected range of vacancies (RPV) as simulated by SRIM. However, we also showed that if Xe dose is not higher enough to induce bubbles, Xe is located at RP. Such a behavior helps understanding the formation of Xe-bubbles in SiO2. We reported the presence of negative defects charge and the paramagnetic defects E'. These defects disappear after 750°C annealing. The shape of bubbles induced by both Kr and Xe is…

Advisors/Committee Members: Ntsoenzok, Esidor (thesis director), Belaidi, Abdelkader (thesis director).

Subjects/Keywords: Technologie Low k; Implantation ionique; Porosité; Fonction diélectrique; Low k; Ionic implantation; Porosity; Dielectric function

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Naas, A. (2010). Etude de l'oxyde de silicium implanté krypton ou xénon : évolution de la constante diélectrique. : Study of Silica implanted krypton or xenon : evolution of dielectric constant. (Doctoral Dissertation). Université d'Orléans. Retrieved from http://www.theses.fr/2010ORLE2059

Chicago Manual of Style (16^th Edition):

Naas, Abdelkrim. “Etude de l'oxyde de silicium implanté krypton ou xénon : évolution de la constante diélectrique. : Study of Silica implanted krypton or xenon : evolution of dielectric constant.” 2010. Doctoral Dissertation, Université d'Orléans. Accessed January 16, 2021. http://www.theses.fr/2010ORLE2059.

MLA Handbook (7^th Edition):

Naas, Abdelkrim. “Etude de l'oxyde de silicium implanté krypton ou xénon : évolution de la constante diélectrique. : Study of Silica implanted krypton or xenon : evolution of dielectric constant.” 2010. Web. 16 Jan 2021.

Vancouver:

Naas A. Etude de l'oxyde de silicium implanté krypton ou xénon : évolution de la constante diélectrique. : Study of Silica implanted krypton or xenon : evolution of dielectric constant. [Internet] [Doctoral dissertation]. Université d'Orléans; 2010. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2010ORLE2059.

Council of Science Editors:

Naas A. Etude de l'oxyde de silicium implanté krypton ou xénon : évolution de la constante diélectrique. : Study of Silica implanted krypton or xenon : evolution of dielectric constant. [Doctoral Dissertation]. Université d'Orléans; 2010. Available from: http://www.theses.fr/2010ORLE2059

NSYSU

7. Peng, Han-Kuang. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2013, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027

► In this thesis, silicon dioxide (SiO2) doped hafnium oxide (HfO2) is applied to form low-k doped high-k materials, and the multilayer structure is used to… (more)

Subjects/Keywords: RRAM; SiO2; High-K; HfO2; energy dissipation rate; Low-K; critical energy

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APA (6^th Edition):

Peng, H. (2013). Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Peng, Han-Kuang. “Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.” 2013. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Peng, Han-Kuang. “Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.” 2013. Web. 16 Jan 2021.

Vancouver:

Peng H. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. [Internet] [Thesis]. NSYSU; 2013. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Peng H. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

8. Yang, Ya-Liang. Electric characteristics of Metal/Insulator/Metal with Damascene Structure under influence of Mechanical Stress.

Degree: PhD, Mechanical and Electro-Mechanical Engineering, 2013, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-233417

► Lead (Pb) free processes have been adopted into Wafer Level Chip Scale Package technology in order to meet the requirements of green environmental production, in… (more)

▼ Lead (Pb) free processes have been adopted into Wafer Level Chip Scale Package technology in order to meet the requirements of green environmental production, in which Sn solder without Pb is applied for welding. The welding process performing at the higher temperature will cause thermal and mechanical stress into devices. In this thesis a Metal/Insulator/Metal (MIM) capacitor sample with comb structures is fabricated with low k material of SiOC, single damascene (SD) and dual damascene (DD) structure embedded low resistive Cu for metal connections. A mechanical stress experiment by bending samples is performed to better understand the influence of mechanical stress occurring during Back End Of Line (BEOL) on electronic transport in the SiOC dielectric. Under compress and tensile stress, the leakage current changes, and becomes higher than unstressed samples for tensile stress, and becomes lower for compress stress. The tensile stress causes to decrease capacitance, and on contrast, compress stress increases capacitance. From the fitting of I-V curve the change of energy barrier ÎÎ¦ and parameter Î² are obtained. From the value of Î² yields to the electronic transport in SD to be Poole-Frenkel (P-F) emission, and in DD to be Schottky emission (SE). The variation of leakage current is originated from the energy band barrier change induced by mechanical stress. The C-V measurement of DD results the increase of capacitance of MIM under compress stress and decrease under tensile stress. The result of SD is similar to DDâs. The capacitance of SD MIM increases under compress stress and decreases under tensile stress, too. It is to conclude the variation of capacitance vs. stress is duo to the energy band barrier change induced by mechanical stress. In addition, SD has a maximum capacitance at negative bias region by sweeping the DC Bias. It indicates that a positive charge of defects existing in dielectric of SD MIM. From the change of capacitance yields the electronic transport in SD to be P-F emission. The capacitance of DD is much larger than SD's, because its defect energy barrier is less than SiOC energy band barrier. The change of SD capacitance by tensile and compress stress is consistent to the leakage current change through energy barrier change for SiOC of SD due to electron transfer via defects in the interface between SiC and SiOC. Tensile and compress stress affects the energy barrier change of defect by the same mechanism. The energy barrier change of SiOC in DD under tensile stress is much larger than that under compress stress, can be interpreted by the energy barrier model of SE. Advisors/Committee Members: Tsung-Ming Tsai (chair), Yung-Chun Wu (chair), Ting-Chang Chang (chair), Che-Hsin Lin (chair), Tai-Fa Young (committee member), Cheng-Tang Pan (chair), Min-Chuan Wang (chair), Po-Tsun Liu (chair).

Subjects/Keywords: energy barrier; mechanical stress; low-k dielectric; capacitance; leakage currents

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APA (6^th Edition):

Yang, Y. (2013). Electric characteristics of Metal/Insulator/Metal with Damascene Structure under influence of Mechanical Stress. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-233417

Chicago Manual of Style (16^th Edition):

Yang, Ya-Liang. “Electric characteristics of Metal/Insulator/Metal with Damascene Structure under influence of Mechanical Stress.” 2013. Doctoral Dissertation, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-233417.

MLA Handbook (7^th Edition):

Yang, Ya-Liang. “Electric characteristics of Metal/Insulator/Metal with Damascene Structure under influence of Mechanical Stress.” 2013. Web. 16 Jan 2021.

Vancouver:

Yang Y. Electric characteristics of Metal/Insulator/Metal with Damascene Structure under influence of Mechanical Stress. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-233417.

Council of Science Editors:

Yang Y. Electric characteristics of Metal/Insulator/Metal with Damascene Structure under influence of Mechanical Stress. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-233417

NSYSU

9. Lin, Zen-Kuan. X-ray Exposure on Low Dielectric Constant Materials.

Degree: Master, Physics, 2001, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-094147

► Abstract As integrated circuit dimensions continue to shrink, interconnect RC delay becomes an increasingly serious problem. Fabrication of interconnect structures using new materials of low… (more)

▼ Abstract As integrated circuit dimensions continue to shrink, interconnect RC delay becomes an increasingly serious problem. Fabrication of interconnect structures using new materials of low resistivity and low permittivity to replace the traditional Al and SiO2 interconnect technology is in high demand. Specially, copper and low dielectric constant (low-k) polymers show great promise. Among various low-k materials, spin-on glass (SOG) materials have been widely used as an interlayer dielectric in multilevel interconnections because they are applied easily and have relatively low process costs. One class of materials, which offers many of properties of silica (SiO2) hardness, thermal and dimensional stability etc.) are the HOSP (Hybrid Organic-Siloxane-Polymer)and HSQ (Hydrogen Silsesquioxane) represent an important member of this family. HOSP and HSQ exhibits a relatively low dielectric constant (k=2.6-2.8) as compared to SiO2 (k=4.0).It is intrinsically hydrophobic, has reasonable mechanical hardness, and possesses exceptional thermal and dimensional stability (in excess of 400â). For these reasons, HOSP and HSQ represent an excellent candidate for applications on the multilevel interconnect architecture. On the other hand, etching and PR removal are key technology during the manufactures of multilevel interconnects. X-ray lithography process is adopted to avoid these issues. As a result, a novel X-ray lithography technology for the low-k interlayer has been proposed for fabrication of IC. And it is a low cost process. In this work, the characteristics of PR removal have been investigated. Experimental results have shown that the dielectric properties of HOSP and HSQ are degraded by PR removal process. The X-ray exposure will solve these problems and it will be a useful tool in advance ICs fabrication. The advantage of the X-ray exposure is the direct patterning, avoids the issues during the etching and photoresist striping processes. The part of film exposed by X-ray will be cured and the other part could be dissolved with the solvent. Strictly speaking, these two issues will be overcome by the X-ray curing. Advisors/Committee Members: Water (chair), J.T. Sheu (chair), J.Y. Zeng (chair), T.C. Chang (committee member), P.T. Liu (chair).

Subjects/Keywords: low k; X-ray

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APA (6^th Edition):

Lin, Z. (2001). X-ray Exposure on Low Dielectric Constant Materials. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-094147

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Lin, Zen-Kuan. “X-ray Exposure on Low Dielectric Constant Materials.” 2001. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-094147.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Lin, Zen-Kuan. “X-ray Exposure on Low Dielectric Constant Materials.” 2001. Web. 16 Jan 2021.

Vancouver:

Lin Z. X-ray Exposure on Low Dielectric Constant Materials. [Internet] [Thesis]. NSYSU; 2001. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-094147.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin Z. X-ray Exposure on Low Dielectric Constant Materials. [Thesis]. NSYSU; 2001. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-094147

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. Mhaisagar Yogesh Suresh. Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;.

Degree: International, 2014, North Maharashtra University

URL: http://shodhganga.inflibnet.ac.in/handle/10603/19452

►

The advancement in fabrication processes results in revolution in newlinetechnology that helps in scaling the device size towards the nanoregime with newlineincrease in device speed… (more)

Subjects/Keywords: Electrical Characterization; Porous Low-k Thin Films; Nanoelectronics

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APA (6^th Edition):

Suresh, M. Y. (2014). Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;. (Thesis). North Maharashtra University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/19452

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Suresh, Mhaisagar Yogesh. “Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;.” 2014. Thesis, North Maharashtra University. Accessed January 16, 2021. http://shodhganga.inflibnet.ac.in/handle/10603/19452.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Suresh, Mhaisagar Yogesh. “Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;.” 2014. Web. 16 Jan 2021.

Vancouver:

Suresh MY. Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;. [Internet] [Thesis]. North Maharashtra University; 2014. [cited 2021 Jan 16]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/19452.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Suresh MY. Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;. [Thesis]. North Maharashtra University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/19452

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Penn State University

11. Khawaji, Ibrahim Hussain. ENGINEERED THIN FILMS OF PARYLENE C AS ELECTRICAL INSULATORS FOR FLEXIBLE ELECTRONICS.

Degree: 2019, Penn State University

URL: https://submit-etda.libraries.psu.edu/catalog/16397ihk101

► The use of a single material as a multifunctional insulator (i.e., substrate, gate dielectric, interlayer dielectric, and passivation layer) in the same device will reduce… (more)

▼ The use of a single material as a multifunctional insulator (i.e., substrate, gate dielectric, interlayer dielectric, and passivation layer) in the same device will reduce the cost and improve the sustainability of flexible devices. The major goal of this dissertation was to examine the potential use of the multifunctional insulator Parylene C as a low-k interlayer dielectric in flexible electronics. Towards this goal, columnar microfibrous thin films of Parylene C were fabricated and their electrical and mechanical properties, stability, and reliability were studied. The columnar microfibrous thin films were fabricated using a collimated flux of Parylene-C monomers directed at a range of angles from 30 deg to 90 deg with respect to the substrate plane in a modified vacuum chamber using oblique angle deposition. Also, bulk Parylene-C thin films were fabricated to explore the stability of bulk Parylene C as a gate dielectric in flexible electronics. The significant results of this research are the following: • Columnar microfibrous thin films of Parylene C can be highly porous. The porosity decreases as the deposition angle increases and lies between 0.38 and 0.56. Both the static Young’s modulus and the yield strength of the columnar microfibrous thin films of Parylene C are higher in the morphologically significant plane than in the plane normal to it. In both loading directions, static Young’s moduli and yield strengths are about two orders of magnitude lower for the columnar microfibrous thin films of Parylene C than the corresponding parameters of the bulk Parylene C, making the columnar microfibrous thin films of Parylene C softer. The lowest relative permittivity of the fabricated columnar microfibrous thin films of Parylene C in the 1–1000 kHz frequency range is about 70% of that of the bulk Parylene C. The static Young’s moduli, yield strengths, and the relative permittivity can be correlated to the porosity, crystallinity, and the deposition angle. • The d.c. leakage current in the columnar microfibrous thin films of Parylene C at temperatures not exceeding 100 C (373 K) arises from the Poole–Frenkel conduction mechanism with a barrier energy of about 0.77 eV. The a.c. conduction in the columnar microfibrous thin films of Parylene C is attributable to small-polaron-tunneling hopping conduction and depends on the frequency f as fs, with s 2 [0.82, 0.85] increasing with temperature. Also, a.c. conduction in the columnar microfibrous thin films of Parylene C is temperature-activated with an activation energy that decreases from 0.020 to 0.012 eV as f increases from 1 to 1000 kHz. • Before and after the application of a constant-voltage stress (CVS), roomtemperature leakage current in a metal-insulator-metal (MIM) structure incorporating columnar microfibrous thin film of Parylene C as the insulator is space-charge limited. The space charge comprises defects introduced during fabrication. No new defects are induced by the CVS. Kohlrausch–Williams–Watts relaxation can be exploited to understand transient… Advisors/Committee Members: Osama O Awadelkarim, Dissertation Advisor/Co-Advisor, Jerzy Ruzyllo, Committee Chair/Co-Chair, Akhlesh Lakhtakia, Committee Member, Noel Christopher Giebink, Committee Member, John B Asbury, Outside Member.

Subjects/Keywords: ENGINEERED THIN FILMS; PARYLENE C; ELECTRICAL INSULATORS; FLEXIBLE ELECTRONICS; low-k

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APA (6^th Edition):

Khawaji, I. H. (2019). ENGINEERED THIN FILMS OF PARYLENE C AS ELECTRICAL INSULATORS FOR FLEXIBLE ELECTRONICS. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/16397ihk101

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Khawaji, Ibrahim Hussain. “ENGINEERED THIN FILMS OF PARYLENE C AS ELECTRICAL INSULATORS FOR FLEXIBLE ELECTRONICS.” 2019. Thesis, Penn State University. Accessed January 16, 2021. https://submit-etda.libraries.psu.edu/catalog/16397ihk101.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Khawaji, Ibrahim Hussain. “ENGINEERED THIN FILMS OF PARYLENE C AS ELECTRICAL INSULATORS FOR FLEXIBLE ELECTRONICS.” 2019. Web. 16 Jan 2021.

Vancouver:

Khawaji IH. ENGINEERED THIN FILMS OF PARYLENE C AS ELECTRICAL INSULATORS FOR FLEXIBLE ELECTRONICS. [Internet] [Thesis]. Penn State University; 2019. [cited 2021 Jan 16]. Available from: https://submit-etda.libraries.psu.edu/catalog/16397ihk101.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Khawaji IH. ENGINEERED THIN FILMS OF PARYLENE C AS ELECTRICAL INSULATORS FOR FLEXIBLE ELECTRONICS. [Thesis]. Penn State University; 2019. Available from: https://submit-etda.libraries.psu.edu/catalog/16397ihk101

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Penn State University

12. Pomorski, Thomas Anthony. defect structure and electronic transport in low-k films used for back end of line dielectrics.

Degree: 2013, Penn State University

URL: https://submit-etda.libraries.psu.edu/catalog/19971

► This work focuses on electronic transport and defect structure in multiple novel dielectric systems used for back end of line (BEOL) applications. BEOL dielectrics with… (more)

▼ This work focuses on electronic transport and defect structure in multiple novel dielectric systems used for back end of line (BEOL) applications. BEOL dielectrics with low dielectric constants, so called low-k dielectrics, and materials which can be used as etch stop layers which have lower dielectric constants than silicon nitride, are needed for current and future integrated circuit technology nodes. However, an understanding of the defects which limit reliability, degrade performance, and contribute to leakage currents in these films is not yet developed. In this research conventional electron paramagnetic resonance (EPR), leakage current, and electrically detected magnetic resonance (EDMR) measurements were utilized to investigate a-SiC:H and SiOC:H dielectrics. These dielectrics are believed to be the most important in future technology. In this study multiple variations in processing conditions, including post-deposition anneals, film chemistry, UV irradiation, and deposition techniques were analyzed. There is a strong correlation between conventional EPR defect density measurements and leakage currents in many of these films. There is also a very strong correlation between hydrogen content and both leakage current and EPR defect density for the a-SiC:H films. The SiOC:H films have a much more complex relationship between EPR defects and leakage currents. In many cases, a close correspondence between the EPR defect density measurement and the leakage currents strongly indicates that the defects observed by EPR are largely responsible for the leakage currents. These defects therefore likely limit the dielectric reliability, but the correspondence is imperfect. Important reliability phenomena in these films, which are likely limited by defects observed in this study, are time-dependent dielectric breakdown and stress induced leakage current. Additionally, EDMR via spin dependent trap assisted tunneling (SDT) has been utilized to investigate the direct link between defects observed in EPR defects and electrical transport. Advisors/Committee Members: Patrick M Lenahan, Thesis Advisor/Co-Advisor, S Ashok, Thesis Advisor/Co-Advisor, Jerzy Ruzyllo, Thesis Advisor/Co-Advisor, Suzanne E Mohney, Thesis Advisor/Co-Advisor.

Subjects/Keywords: electronic materials; EPR; low-k; back end of line

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APA (6^th Edition):

Pomorski, T. A. (2013). defect structure and electronic transport in low-k films used for back end of line dielectrics. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/19971

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Pomorski, Thomas Anthony. “defect structure and electronic transport in low-k films used for back end of line dielectrics.” 2013. Thesis, Penn State University. Accessed January 16, 2021. https://submit-etda.libraries.psu.edu/catalog/19971.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Pomorski, Thomas Anthony. “defect structure and electronic transport in low-k films used for back end of line dielectrics.” 2013. Web. 16 Jan 2021.

Vancouver:

Pomorski TA. defect structure and electronic transport in low-k films used for back end of line dielectrics. [Internet] [Thesis]. Penn State University; 2013. [cited 2021 Jan 16]. Available from: https://submit-etda.libraries.psu.edu/catalog/19971.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pomorski TA. defect structure and electronic transport in low-k films used for back end of line dielectrics. [Thesis]. Penn State University; 2013. Available from: https://submit-etda.libraries.psu.edu/catalog/19971

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Penn State University

13. Aliyaru Kunju, Ashkar Ali. Design Fabrication and Characterization of Antimonide MOS Transistors.

Degree: 2012, Penn State University

URL: https://submit-etda.libraries.psu.edu/catalog/14777

► Future transistor scaling will require enhancement in device electrostatics (multigate), channel transport enhancement (beyond strained Silicon) and reduction in parasitics (contact, junction engineering etc.). Due… (more)

Subjects/Keywords: MOS; Low Power; Antimonide; MOSFET; High-k Dielectric; Quantum Well; CV

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APA (6^th Edition):

Aliyaru Kunju, A. A. (2012). Design Fabrication and Characterization of Antimonide MOS Transistors. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/14777

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Aliyaru Kunju, Ashkar Ali. “Design Fabrication and Characterization of Antimonide MOS Transistors.” 2012. Thesis, Penn State University. Accessed January 16, 2021. https://submit-etda.libraries.psu.edu/catalog/14777.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Aliyaru Kunju, Ashkar Ali. “Design Fabrication and Characterization of Antimonide MOS Transistors.” 2012. Web. 16 Jan 2021.

Vancouver:

Aliyaru Kunju AA. Design Fabrication and Characterization of Antimonide MOS Transistors. [Internet] [Thesis]. Penn State University; 2012. [cited 2021 Jan 16]. Available from: https://submit-etda.libraries.psu.edu/catalog/14777.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Aliyaru Kunju AA. Design Fabrication and Characterization of Antimonide MOS Transistors. [Thesis]. Penn State University; 2012. Available from: https://submit-etda.libraries.psu.edu/catalog/14777

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

14. McSpadden, Rachael Lynne. Method development for long-term laboratory studies evaluating contaminant assimilation processes.

Degree: MS(M.S.), Civil and Environmental Engineering, 2016, Colorado State University

URL: http://hdl.handle.net/10217/178918

► Remediation technologies for soil and groundwater that are impacted by chlorinated solvents are limited when reducing contaminant concentrations below maximum contaminant levels (MCLs) established by… (more)

▼ Remediation technologies for soil and groundwater that are impacted by chlorinated solvents are limited when reducing contaminant concentrations below maximum contaminant levels (MCLs) established by the US Environmental Protection Agency (EPA). The limited effectiveness of current technologies is partly due to well-documented contaminant back diffusion from low-permeability (k) zones causing long-term impacts on water quality. Back diffusion out of low-k zones for extended periods of time, give strong evidence that assimilation processes are driving the fate and transport of chlorinated solvents within low-k zones. The direct impacts assimilation processes, such as sorption and degradation, have on contaminant concentrations may be slow and negligible on shorter time scales. But for longer time scales assimilation processes could have consequential effects on sites where groundwater concentrations are predicted to exceed MCLs for decades to centuries. Research studies located in the field have been carried out to study assimilation processes in low-k zones. The challenge of such field studies is capturing complete data sets from complex field environments. The challenges include inability to close the mass balance, confidently identifying assimilation mechanisms at work, and are limited to short term studies. Thus, the overall objective of this research is to advance the current knowledge of assimilative processes within low-k zones through the application of long-term (~5-10years) laboratory studies. The goal of the research presented herein, is to create a starting point for long-term laboratory studies in the hopes to quantify assimilation processes within low-k zones. Prior to conducting long-term laboratory experiments, a necessary step of establishing and testing methods need to be conducted. The research described within this thesis applies the use of short-term laboratory studies conducted over a 2 to 3 month time span to test preliminary methods, establish baseline data, and test applicability of mathematical models. The model contaminant used for the short-term laboratory experiments was tetrachloroethene (PCE). For the beginning stages of method development, the assimilation process that was isolated and focused on was sorption. Sorption was evaluated in porous media of differing properties, which included four field soils (Soil A, B, C, and D) and one lab grade soil (LGS). Two short-term column studies were tested to evaluate for viability in collecting data to be used in capturing transport and assimilation processes for use in long-term laboratory studies. The two short-term column study methods are identified throughout this document as headspace vials and ampules. The design setup for both column studies were constructed to utilize diffusive transport of contaminant with a saturated lower boundary layer of PCE, an initially clean water saturated soil column, and headspace at the upper boundary layer. For each column study design, the contaminant is transported via passive… Advisors/Committee Members: Sale, Tom (advisor), Blotevogel, Jens (committee member), Butters, Greg (committee member).

Subjects/Keywords: low-k zones

…indicated by red) in a simplified heterogeneous system of transmissive zone and low-k zones… …Sale 2010). The slow release of contaminants from low-k zones challenges current… …and out of low-k zones restricts our predictive models’ ability to forecast future behavior… …drive contaminant fate and transport within low-k zones. This knowledge will support rational… …long periods of time, the most important process in plumes may be occurring in low-k zones…

13 more images…

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APA (6^th Edition):

McSpadden, R. L. (2016). Method development for long-term laboratory studies evaluating contaminant assimilation processes. (Masters Thesis). Colorado State University. Retrieved from http://hdl.handle.net/10217/178918

Chicago Manual of Style (16^th Edition):

McSpadden, Rachael Lynne. “Method development for long-term laboratory studies evaluating contaminant assimilation processes.” 2016. Masters Thesis, Colorado State University. Accessed January 16, 2021. http://hdl.handle.net/10217/178918.

MLA Handbook (7^th Edition):

McSpadden, Rachael Lynne. “Method development for long-term laboratory studies evaluating contaminant assimilation processes.” 2016. Web. 16 Jan 2021.

Vancouver:

McSpadden RL. Method development for long-term laboratory studies evaluating contaminant assimilation processes. [Internet] [Masters thesis]. Colorado State University; 2016. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10217/178918.

Council of Science Editors:

McSpadden RL. Method development for long-term laboratory studies evaluating contaminant assimilation processes. [Masters Thesis]. Colorado State University; 2016. Available from: http://hdl.handle.net/10217/178918

University of Minnesota

15. Rangnekar, Neel. Ultra-thin MFI zeolite films: Synthesis, Characterization and Progress Toward Industrial Applications.

Degree: PhD, Chemical Engineering, 2017, University of Minnesota

URL: http://hdl.handle.net/11299/192649

► Separation processes account for 10-15% of US energy consumption. A large fraction of that energy is consumed by energy-inefficient thermal separation processes like distillation. If… (more)

Subjects/Keywords: 2-dimensional materials; Low-k films; Membranes; Zeolites

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APA (6^th Edition):

Rangnekar, N. (2017). Ultra-thin MFI zeolite films: Synthesis, Characterization and Progress Toward Industrial Applications. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/192649

Chicago Manual of Style (16^th Edition):

Rangnekar, Neel. “Ultra-thin MFI zeolite films: Synthesis, Characterization and Progress Toward Industrial Applications.” 2017. Doctoral Dissertation, University of Minnesota. Accessed January 16, 2021. http://hdl.handle.net/11299/192649.

MLA Handbook (7^th Edition):

Rangnekar, Neel. “Ultra-thin MFI zeolite films: Synthesis, Characterization and Progress Toward Industrial Applications.” 2017. Web. 16 Jan 2021.

Vancouver:

Rangnekar N. Ultra-thin MFI zeolite films: Synthesis, Characterization and Progress Toward Industrial Applications. [Internet] [Doctoral dissertation]. University of Minnesota; 2017. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/11299/192649.

Council of Science Editors:

Rangnekar N. Ultra-thin MFI zeolite films: Synthesis, Characterization and Progress Toward Industrial Applications. [Doctoral Dissertation]. University of Minnesota; 2017. Available from: http://hdl.handle.net/11299/192649

16. Goethals, Frederik. Periodic mesoporous organosilicas for application as low-k dielectric materials.

Degree: 2012, Ghent University

URL: http://hdl.handle.net/1854/LU-3069897

► In semiconductor manufacturing, a low-k dielectric is a material with a small dielectric constant relative to silicon dioxide. In digital circuits, insulating dielectrics separate the… (more)

Subjects/Keywords: Physics and Astronomy; PMO; thin films; low-k materials

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APA (6^th Edition):

Goethals, F. (2012). Periodic mesoporous organosilicas for application as low-k dielectric materials. (Thesis). Ghent University. Retrieved from http://hdl.handle.net/1854/LU-3069897

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Goethals, Frederik. “Periodic mesoporous organosilicas for application as low-k dielectric materials.” 2012. Thesis, Ghent University. Accessed January 16, 2021. http://hdl.handle.net/1854/LU-3069897.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Goethals, Frederik. “Periodic mesoporous organosilicas for application as low-k dielectric materials.” 2012. Web. 16 Jan 2021.

Vancouver:

Goethals F. Periodic mesoporous organosilicas for application as low-k dielectric materials. [Internet] [Thesis]. Ghent University; 2012. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1854/LU-3069897.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Goethals F. Periodic mesoporous organosilicas for application as low-k dielectric materials. [Thesis]. Ghent University; 2012. Available from: http://hdl.handle.net/1854/LU-3069897

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

17. Huang, Huai, Ph. D. Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair.

Degree: PhD, Physics, 2012, University of Texas – Austin

URL: http://hdl.handle.net/2152/ETD-UT-2012-08-5981

► The Ultra-low-k material is required to reduce the RC time delay in the integrated circuits. However, the integration of the porous low-k material into the… (more)

▼ The Ultra-low-k material is required to reduce the RC time delay in the integrated circuits. However, the integration of the porous low-k material into the on-chip interconnects was impeded by the plasma induced damage during etching and photoresist stripping processes. This dissertation aims to study the mechanism of plasma damage to porous ultra-low-k dielectrics with the objective to minimize the damage and to develop methods and processes to restore the low-k dielectric after the plasma damage. First, the plasma etching induced surface roughening was studied on blanket porous SiCOH films in the fluorocarbon based plasma. Substantial surface roughening was found in the low polymerization region, where the surface roughening process was initiated by the unevenly distribution of surface fluorocarbon polymers in the pore structure and enhanced by ion induced surface densification. With oxygen addition, the surface densification layer increased the radial diffusion rate difference between the top and the bottom of the pits, resulting in further increase of the surface roughness. The best process optimization was found at a "threshold point" where the surface polymerization level is just high enough to suppress the roughness initiation. The second part of this dissertation investigates the mechanism of the oxygen plasma damaging process. The roles of plasma constituents (i.e. ions, radicals and photons with different wavelengths) were differentiated by an on-wafer filter system. Oxygen radical was identified as the most critical and its damage effect was enhanced by photons with wavelength smaller than 185nm. The oxygen radical kinetics in the porous structure of low-k, including diffusion, reaction and recombination, was described analytically with a plasma altered layer model and then simulated with a Monte Carlo computational method, which give guidelines to minimize the damage. The analytical model of oxygen radical kinetic process is also used to investigate the oxygen plasma damage to patterned low-k structure, which is confirmed by experiments. Finally, the dielectric recovery was studied using silylation and UV broadband thermal treatment, both individually and in combination. After both vapor and supercritical CO₂ silylation, surface carbon and hydrophobicity were partially recovered. However, the recovery effect was limited to the surface. In comparison, UV treatment can effectively remove water from the bulk of the damaged film and consolidate the silanol bonds with the help of thermal activation. The combination of UV and silylation treatments is more effectively for dielectric recovery than UV or silylation alone. The "UV first" treatment provided a better recovery in sequential processes. Under the same conditions, simultaneous treatments by silylation and UV irradiation achieved better bulk and surface recovery than the sequential process. Advisors/Committee Members: Ho, P. S. (advisor), Tsoi, Maxim (committee member), Shih, Chih-Kang (committee member), Huang, Rui (committee member), Yao, Zhen (committee member).

Subjects/Keywords: Low-k; Dielectric; Plasma

…of low-k, including diffusion, reaction and recombination, was described analytically with… …process is also used to investigate the oxygen plasma damage to patterned low-k structure, which… …1 1.1. Development of Cu/low-k interconnect… …5 1.3 Cu/low-k integration challenges… …63 Chapter 4: Oxidative plasma induced damage to porous low-k dielectrics ....... 65 4.1…

10 more images…

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Huang, Huai, P. D. (2012). Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/ETD-UT-2012-08-5981

Chicago Manual of Style (16^th Edition):

Huang, Huai, Ph D. “Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair.” 2012. Doctoral Dissertation, University of Texas – Austin. Accessed January 16, 2021. http://hdl.handle.net/2152/ETD-UT-2012-08-5981.

MLA Handbook (7^th Edition):

Huang, Huai, Ph D. “Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair.” 2012. Web. 16 Jan 2021.

Vancouver:

Huang, Huai PD. Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2012. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2152/ETD-UT-2012-08-5981.

Council of Science Editors:

Huang, Huai PD. Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair. [Doctoral Dissertation]. University of Texas – Austin; 2012. Available from: http://hdl.handle.net/2152/ETD-UT-2012-08-5981

Iowa State University

18. Shoeb, Juline. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity.

Degree: 2012, Iowa State University

URL: https://lib.dr.iastate.edu/etd/12460

► Plasma-surface interactions are very important in the fabrication of the nm-sized features of integrated circuits. Plasma processes are employed to produce high-resolution patterns in many… (more)

Subjects/Keywords: Adsorption; Dielectric constant; High-k; Low-k; Plasma damage; Selectivity; Electrical and Electronics; Nanoscience and Nanotechnology; Plasma and Beam Physics

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APA (6^th Edition):

Shoeb, J. (2012). Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity. (Thesis). Iowa State University. Retrieved from https://lib.dr.iastate.edu/etd/12460

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Shoeb, Juline. “Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity.” 2012. Thesis, Iowa State University. Accessed January 16, 2021. https://lib.dr.iastate.edu/etd/12460.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Shoeb, Juline. “Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity.” 2012. Web. 16 Jan 2021.

Vancouver:

Shoeb J. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity. [Internet] [Thesis]. Iowa State University; 2012. [cited 2021 Jan 16]. Available from: https://lib.dr.iastate.edu/etd/12460.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Shoeb J. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity. [Thesis]. Iowa State University; 2012. Available from: https://lib.dr.iastate.edu/etd/12460

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

19. Wei, Hsuan-Yi. Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric.

Degree: Master, Physics, 2002, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911102-145452

► Abstract As ULSI circuits are scaled down to deep submicron regime, interconnect delay becomes increasingly dominant over intrinsic gate delay. To reduce the RC delay… (more)

Subjects/Keywords: HSQ; Low-Dielectric constant; Hydrogen Silsesqnioxane; low k

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Wei, H. (2002). Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911102-145452

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Wei, Hsuan-Yi. “Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric.” 2002. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911102-145452.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Wei, Hsuan-Yi. “Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric.” 2002. Web. 16 Jan 2021.

Vancouver:

Wei H. Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric. [Internet] [Thesis]. NSYSU; 2002. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911102-145452.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wei H. Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric. [Thesis]. NSYSU; 2002. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911102-145452

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

20. Tsai, Hong-Ming. Study on ultra low-k silicon oxide with nano-porous structure.

Degree: Master, Physics, 2002, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708102-111915

► In this thesis, the leakage-mechanism after O2-plasma treatments was investigated. And the mechanism is transformed from Schottky emission into ionic conduction due to moisture uptake… (more)

Subjects/Keywords: low-k; low dielectric constant; copper; nano-structure; porous

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APA (6^th Edition):

Tsai, H. (2002). Study on ultra low-k silicon oxide with nano-porous structure. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708102-111915

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Tsai, Hong-Ming. “Study on ultra low-k silicon oxide with nano-porous structure.” 2002. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708102-111915.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Tsai, Hong-Ming. “Study on ultra low-k silicon oxide with nano-porous structure.” 2002. Web. 16 Jan 2021.

Vancouver:

Tsai H. Study on ultra low-k silicon oxide with nano-porous structure. [Internet] [Thesis]. NSYSU; 2002. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708102-111915.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tsai H. Study on ultra low-k silicon oxide with nano-porous structure. [Thesis]. NSYSU; 2002. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708102-111915

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Université de Grenoble

21. Verriere, Virginie. Analyse électrique de diélectriques SiOCH poreux pour évaluer la fiabilité des interconnexions avancées : Electrical analysis of porous SiOCH dielectrics to evaluate reliability of advanced interconnects.

Degree: Docteur es, Physique des matériaux, 2011, Université de Grenoble

URL: http://www.theses.fr/2011GRENY015

►

Avec la miniaturisation des circuits intégrés, le délai de transmission dû aux interconnexions a fortement augmenté. Pour limiter cet effet parasite, le SiO2 intégré en… (more)

▼

Avec la miniaturisation des circuits intégrés, le délai de transmission dû aux interconnexions a fortement augmenté. Pour limiter cet effet parasite, le SiO2 intégré en tant qu'isolant entre les lignes métalliques a été remplacé par des matériaux diélectriques à plus faible permittivité diélectrique dits Low-κ. La principale approche pour élaborer ces matériaux est de diminuer la densité en incorporant de la porosité dans des matériaux à base de SiOCH. L'introduction de ces matériaux peu denses a cependant diminué la fiabilité : sous tension, le diélectrique SiOCH poreux est traversé par des courants de fuite et peut claquer, générant des défaillances dans le circuit. La problématique pour l'industriel est de comprendre les mécanismes de dégradation du diélectrique Low-κ afin de déterminer sa durée de vie aux conditions de température et de tension de fonctionnement. Dans ce contexte, les travaux de cette thèse ont consisté à étudier les mécanismes de conduction liés aux courant de fuite afin d'extraire des paramètres quantitatifs représentatifs de l'intégrité électrique du matériau. Nous avons utilisé ces paramètres afin de suivre le vieillissement du matériau soumis à une contrainte électrique. Nous avons également introduit la spectroscopie d'impédance à basse fréquence comme moyen de caractérisation du diélectrique Low-κ. Cet outil nous a permis de caractériser le diélectrique intermétallique de façon non agressive et d'identifier des phénomènes de transport de charges et de diffusion métallique à très basses tensions qui offrent des perspectives pour l'étude de la fiabilité diélectrique des interconnexions.

With the miniaturization of integrated circuits, transmission delay due to interconnects is hardly increased. To minimize this parasitic effect, low-κ dielectric materials are requested to replace SiO2 as inter-metal dielectric between metallic lines. With its low density, porous SiOCH are good candidate for such applications. However, the implementation of these materials decreased reliability: under voltage, leakage currents establish through low-κ dielectric whose breakdown can generate failures in circuits. The problem for manufacturers is to understand the degradation mechanisms of porous SiOCH to determine its lifetime at conditions of nominal temperature and voltage. In this frame, conduction mechanisms of leakage currents have been studied during this thesis to extract quantitative parameters that represent the electrical integrity of the dielectric. We have used these parameters to monitor the electrical aging of the dielectric under electrical stress. We have proposed low-frequency impedance spectroscopy as characterization tool of low-κ. This tool allowed to characterize the intermetal dielectric non-destructively and to identify phenomenon of carriers transport and metallic diffusion at very low voltages that open perspectives for the study of dielectric reliability in interconnects.

Advisors/Committee Members: Sylvestre, Alain (thesis director).

Subjects/Keywords: Interconnexions; Diélectrique Low-k; SiOCH poreux; Fiabilité; Courant de fuite; Spectroscopie d'impédance; Interconnects; Low-k dielectric; Porous SiOCH; Reliability; Leakage current; Impedance spectroscopy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Verriere, V. (2011). Analyse électrique de diélectriques SiOCH poreux pour évaluer la fiabilité des interconnexions avancées : Electrical analysis of porous SiOCH dielectrics to evaluate reliability of advanced interconnects. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENY015

Chicago Manual of Style (16^th Edition):

Verriere, Virginie. “Analyse électrique de diélectriques SiOCH poreux pour évaluer la fiabilité des interconnexions avancées : Electrical analysis of porous SiOCH dielectrics to evaluate reliability of advanced interconnects.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed January 16, 2021. http://www.theses.fr/2011GRENY015.

MLA Handbook (7^th Edition):

Verriere, Virginie. “Analyse électrique de diélectriques SiOCH poreux pour évaluer la fiabilité des interconnexions avancées : Electrical analysis of porous SiOCH dielectrics to evaluate reliability of advanced interconnects.” 2011. Web. 16 Jan 2021.

Vancouver:

Verriere V. Analyse électrique de diélectriques SiOCH poreux pour évaluer la fiabilité des interconnexions avancées : Electrical analysis of porous SiOCH dielectrics to evaluate reliability of advanced interconnects. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2011GRENY015.

Council of Science Editors:

Verriere V. Analyse électrique de diélectriques SiOCH poreux pour évaluer la fiabilité des interconnexions avancées : Electrical analysis of porous SiOCH dielectrics to evaluate reliability of advanced interconnects. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENY015

Brno University of Technology

22. Menčík, Přemysl. Příprava poly-para-xylylenových vrstev a charakteriazace jejich vlastností: Poly-para-xylylene films preparation and characterization of their properties.

Degree: 2018, Brno University of Technology

URL: http://hdl.handle.net/11012/8224

► Poly-p-xylylene is a basic polymer of parylene family. It was discovered in 50s of the 20th century. In practical applications, there are used several derivates.… (more)

Subjects/Keywords: Parylen; poly-p-xylylen; tenké vrstvy; protikorozní ochrana; low-k materiál; CVD; Parylene; poly-p-xylylene; Thin films; Corrosion protection; Low-k material; DVD

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APA (6^th Edition):

Menčík, P. (2018). Příprava poly-para-xylylenových vrstev a charakteriazace jejich vlastností: Poly-para-xylylene films preparation and characterization of their properties. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/8224

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Menčík, Přemysl. “Příprava poly-para-xylylenových vrstev a charakteriazace jejich vlastností: Poly-para-xylylene films preparation and characterization of their properties.” 2018. Thesis, Brno University of Technology. Accessed January 16, 2021. http://hdl.handle.net/11012/8224.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Menčík, Přemysl. “Příprava poly-para-xylylenových vrstev a charakteriazace jejich vlastností: Poly-para-xylylene films preparation and characterization of their properties.” 2018. Web. 16 Jan 2021.

Vancouver:

Menčík P. Příprava poly-para-xylylenových vrstev a charakteriazace jejich vlastností: Poly-para-xylylene films preparation and characterization of their properties. [Internet] [Thesis]. Brno University of Technology; 2018. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/11012/8224.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Menčík P. Příprava poly-para-xylylenových vrstev a charakteriazace jejich vlastností: Poly-para-xylylene films preparation and characterization of their properties. [Thesis]. Brno University of Technology; 2018. Available from: http://hdl.handle.net/11012/8224

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of North Texas

23. Nerusu, Pawan Kumar. Supercritical Silylation and Stability of Silyl Groups.

Degree: 2006, University of North Texas

URL: https://digital.library.unt.edu/ark:/67531/metadc5216/

► Methylsilsesquioxane (MSQ) and organosilicate glass (OSG) are the materials under this study because they exhibit the dielectric constant values necessary for future IC technology requirements.… (more)

Subjects/Keywords: Silylation.; low-k; trialkylchlorosilanes; supercritical CO2; repair in low-k

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APA (6^th Edition):

Nerusu, P. K. (2006). Supercritical Silylation and Stability of Silyl Groups. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc5216/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Nerusu, Pawan Kumar. “Supercritical Silylation and Stability of Silyl Groups.” 2006. Thesis, University of North Texas. Accessed January 16, 2021. https://digital.library.unt.edu/ark:/67531/metadc5216/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Nerusu, Pawan Kumar. “Supercritical Silylation and Stability of Silyl Groups.” 2006. Web. 16 Jan 2021.

Vancouver:

Nerusu PK. Supercritical Silylation and Stability of Silyl Groups. [Internet] [Thesis]. University of North Texas; 2006. [cited 2021 Jan 16]. Available from: https://digital.library.unt.edu/ark:/67531/metadc5216/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Nerusu PK. Supercritical Silylation and Stability of Silyl Groups. [Thesis]. University of North Texas; 2006. Available from: https://digital.library.unt.edu/ark:/67531/metadc5216/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of North Texas

24. Kazi, Haseeb. Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications.

Degree: 2015, University of North Texas

URL: https://digital.library.unt.edu/ark:/67531/metadc801876/

► In-situ x-ray photoemission (XPS) and ex-situ FTIR studies of nanoporous organosilicate glass (OSG) films point to the separate roles of radicals vs. VUV photons in… (more)

▼ In-situ x-ray photoemission (XPS) and ex-situ FTIR studies of nanoporous organosilicate glass (OSG) films point to the separate roles of radicals vs. VUV photons in the carbon abstraction. The studies indicate that reaction with O2 in presence of VUV photons (~123 nm) result in significant carbon abstraction within the bulk and that the kinetics of this process is diffusion-limited. In contrast, OSG exposed to atomic O (no VUV) results in Si-C bond scission and Si-O bond formation, but this process is self-limiting after formation of ~1 nm thick SiO2 surface layer that inhibits further diffusion. Therefore, the diffusion-dominated kinetics of carbon abstraction observed for OSG exposed to O2 plasma is definitively attributed to the diffusion of O2 down OSG nanopores, reacting at photo-activated sites, rather than to the diffusion of atomic O. Pretreatment of OSG by 900 eV Ar+ ion bombardment also results in formation of 1 nm thick SiO2-like surface overlayer that inhibits O2 diffusion, inhibiting VUV+O2 and O2 plasma-induced reactions, and that the effectiveness of this treatment increases with ion kinetic energy. On the contrary, organosilicate glass (OSG) films with backbone carbon (-Si-R-Si-) exhibit significantly enhanced resistance to carbon loss upon exposure to O2 plasma, radicals and VUV+O2 compared to films with terminal methyl groups (Si-CH3). Films incorporating backbone carbon chains (-Si-R-Si-) were deposited from 1,2 bis (triethoxysilyl) ethane (BTESE) precursor by ebeam or plasma cross-linking. The radical effects on BTESE film indicates negligible carbon loss or Si oxidation, combined with C-O bond formation, under conditions where OSG films with terminal methyl groups exhibit > 80% carbon loss within the surface region of the film. C-O bond formation is never observed for terminal CH3 groups. Further, backbone carbon (-Si-R-Si-) films exposed to VUV+O2 exhibit self-limiting, minimal net carbon loss. This indicates that plasma-induced Si-C bond rupture still occurs in the linking unit, but with a low probability of simultaneous rupture of both Si-C bonds required for abstraction of an in-line methylene bridging group. The data thus demonstrate that OSG films containing backbone carbon groups exhibit greatly reduced rates of carbon loss in the presence of O2 plasma, radicals or VUV+O2 compared to films with terminal carbon groups due to fundamentally different patterns of Si-C bond scission. The results demonstrate the potential of backbone carbon low-k films to resist plasma induced damage. Advisors/Committee Members: Kelber, Jeffry Alan, 1952-, Du, Jincheng, Choi, Wonbong, Mukherjee, Sundeep, Shepherd, Nigel Dexter.

Subjects/Keywords: low-k dielectric films; plasma damage; pore-sealing; Dielectric films.; Amorphous substances.; Plasma chemistry.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Kazi, H. (2015). Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc801876/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Kazi, Haseeb. “Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications.” 2015. Thesis, University of North Texas. Accessed January 16, 2021. https://digital.library.unt.edu/ark:/67531/metadc801876/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Kazi, Haseeb. “Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications.” 2015. Web. 16 Jan 2021.

Vancouver:

Kazi H. Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications. [Internet] [Thesis]. University of North Texas; 2015. [cited 2021 Jan 16]. Available from: https://digital.library.unt.edu/ark:/67531/metadc801876/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kazi H. Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications. [Thesis]. University of North Texas; 2015. Available from: https://digital.library.unt.edu/ark:/67531/metadc801876/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Arizona

25. Iqbal, Asad. Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces .

Degree: 2007, University of Arizona

URL: http://hdl.handle.net/10150/196143

► Ultra low-k dielectric films are expected to widely replace SiO2 as the interlayer dielectric for the next-generation microelectronic devices. A challenge facing the integration of… (more)

▼ Ultra low-k dielectric films are expected to widely replace SiO2 as the interlayer dielectric for the next-generation microelectronic devices. A challenge facing the integration of these dielectrics in manufacturing is their interactions with gaseous contaminants, such as moisture and isopropanol, and the resulting change in their properties. Moisture retained in the film not only has detrimental effect on the k value of the film but also causes reliability and adhesion problems due to gradual outgassing. The physical and chemical interactions of moisture with porous spin-on and chemical vapor deposited (CVD) dielectrics are investigated using temperature- and concentration-programmed exposure and purge sequence together with trace moisture analysis, using atmospheric pressure ionization mass spectrometry.The model compounds in this study are porous Methylsilsesquioxane and Black Diamond II films, deposited and treated under typical manufacturing conditions. Transmission Electron Microscope (TEM) studies showed that etching and ashing processes resulted in the formation of two layers, a damaged layer and non-damaged layer, which significantly changed moisture interaction properties.Moisture sorption and desorption studies showed that as compared to SiO2 these films not only have a higher uptake capacity but also a slower and more activated moisture removal process. This could be a significant problem in successful integration of these films in IC manufacturing process.A process model was developed that provided information on the mechanism and kinetics of moisture uptake and release in thin porous films. The model elucidated the effect of film properties on the contamination uptake as well as outgassing. The model is a valuable tool for designing an optimum process for contamination control and removal in porous films.Another concern in IC manufacturing is the outgassing of impurities of electropolished stainless steel (EPSS) surfaces used in UHP gas distribution system. Moisture interaction with EPSS surface is studied in sub ppb range. A fundamental model was developed to study the mechanism and kinetics of moisture uptake and release from EPSS. The model developed would be a valuable tool for designing an optimum process for contamination control and to predict the moisture dry down performance of large-scale, systems. Advisors/Committee Members: Shadman, Farhang (advisor), Muscat, Anthony (committeemember), Philipossian, Ara (committeemember).

Subjects/Keywords: dielectrics; moisture; outgassing; desoprtion; low k

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Iqbal, A. (2007). Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/196143

Chicago Manual of Style (16^th Edition):

Iqbal, Asad. “Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces .” 2007. Doctoral Dissertation, University of Arizona. Accessed January 16, 2021. http://hdl.handle.net/10150/196143.

MLA Handbook (7^th Edition):

Iqbal, Asad. “Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces .” 2007. Web. 16 Jan 2021.

Vancouver:

Iqbal A. Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces . [Internet] [Doctoral dissertation]. University of Arizona; 2007. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10150/196143.

Council of Science Editors:

Iqbal A. Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces . [Doctoral Dissertation]. University of Arizona; 2007. Available from: http://hdl.handle.net/10150/196143

University of North Texas

26. Behera, Swayambhu Prasad. The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms.

Degree: 2011, University of North Texas

URL: https://digital.library.unt.edu/ark:/67531/metadc84175/

► Nanoporous low-k dielectrics are used for integrated circuit interconnects to reduce the propagation delays, and cross talk noise between metal wires as an alternative material… (more)

Subjects/Keywords: Low-k dielectrics; He plasma; O2 plasma; carbon abstraction; plasma damage; AFM; FTIR; nanoporous ULK

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Behera, S. P. (2011). The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc84175/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Behera, Swayambhu Prasad. “The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms.” 2011. Thesis, University of North Texas. Accessed January 16, 2021. https://digital.library.unt.edu/ark:/67531/metadc84175/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Behera, Swayambhu Prasad. “The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms.” 2011. Web. 16 Jan 2021.

Vancouver:

Behera SP. The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms. [Internet] [Thesis]. University of North Texas; 2011. [cited 2021 Jan 16]. Available from: https://digital.library.unt.edu/ark:/67531/metadc84175/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Behera SP. The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms. [Thesis]. University of North Texas; 2011. Available from: https://digital.library.unt.edu/ark:/67531/metadc84175/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Maryland

27. Weilnboeck, Florian. PLASMA INTERACTIONS WITH MASKING MATERIALS FOR NANOFABRICATION.

Degree: Material Science and Engineering, 2011, University of Maryland

URL: http://hdl.handle.net/1903/12280

► Plasma-based transfer of patterns into other materials is a key process for production of nano-scale devices used in micro-electronic technology. With the continuously decreasing feature-size… (more)

▼ Plasma-based transfer of patterns into other materials is a key process for production of nano-scale devices used in micro-electronic technology. With the continuously decreasing feature-size of integrated circuits, manufacturing tolerances are becoming increasingly smaller and complex interactions of plasmas and patterned mask materials require an atomistic understanding to meet future processing tolerances. In this work, we investigated how plasma-material interactions in typical low-k pattern transfer processes depend on individual plasma components and properties of polymeric and metallic masks. First, we studied modifications of 193nm and 248nm photoresist (PR) by plasma ultraviolet/vacuum ultraviolet (UV) radiation, quantifying contributions of plasma radiation to the overall material modifications for direct interaction with plasma. Energetic ions (~125 eV) led to rapid (~3-5 s) formation of a graphitic ion-crust (~1.8 nm) and introduced together with simultaneous UV modifications of the material bulk significantly higher roughness for 193nm PR (~6 nm) than for 248nm PR (~1 nm). During ion-crust formation, 193nm PR softened by chain-scissioning and pendant group detachment in a depth of ~60 nm by UV radiation, while 248nm PR was radiation stable showing surface-close cross-linking (~4 nm). Pretreating 193nm PR with a radiationdominated He plasma and introducing UV modifications before ion-crust formation in the subsequent plasma etch reduces synergistic roughness formation as explained by wrinkling theory. Second, we studied interactions of fluorocarbon (FC) plasmas with Ti and TiN and compared these with organosilicate glass (OSG). Metal hardmasks are expected to provide improved etching selectivity (ES) and low-k damage compared to PR during pattern transfer. Erosion stages and dependencies of etch rates (ER) on FC layer thickness and energy deposition by ions were identified. ES were low (~4-8) in the diffusion-limited regime (thick FC layers) where OSG experienced strong reduction in ER, but high (up to 15) in the chemical sputtering regime (thin FC layers) at low ion energies where removal of Ti etch products was limited. TiN exhibited higher ER and lower ES than Ti due to increased surface reactivity after rapid removal of N. Overall, findings give directions for rational design of masking materials and plasma discharges for future nanofabrication pattern transfer processes. Advisors/Committee Members: Oehrlein, Gottlieb (advisor).

Subjects/Keywords: Plasma physics; low-k materials; metal hardmask; pattern transfer; photoresist; semiconductor; UV radiation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Weilnboeck, F. (2011). PLASMA INTERACTIONS WITH MASKING MATERIALS FOR NANOFABRICATION. (Thesis). University of Maryland. Retrieved from http://hdl.handle.net/1903/12280

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Weilnboeck, Florian. “PLASMA INTERACTIONS WITH MASKING MATERIALS FOR NANOFABRICATION.” 2011. Thesis, University of Maryland. Accessed January 16, 2021. http://hdl.handle.net/1903/12280.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Weilnboeck, Florian. “PLASMA INTERACTIONS WITH MASKING MATERIALS FOR NANOFABRICATION.” 2011. Web. 16 Jan 2021.

Vancouver:

Weilnboeck F. PLASMA INTERACTIONS WITH MASKING MATERIALS FOR NANOFABRICATION. [Internet] [Thesis]. University of Maryland; 2011. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1903/12280.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Weilnboeck F. PLASMA INTERACTIONS WITH MASKING MATERIALS FOR NANOFABRICATION. [Thesis]. University of Maryland; 2011. Available from: http://hdl.handle.net/1903/12280

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

28. 宇井, 利昌. Al2O3およびAlTiOの化合物半導体異種材料融合集積技術への応用.

Degree: 博士（マテリアルサイエンス）, 2017, Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学

URL: http://hdl.handle.net/10119/14253

Supervisor:鈴木　寿一

マテリアルサイエンス研究科

博士

Subjects/Keywords: AlTiO; heterogeneous integration; InAs/high-k/low-k; modulation doping; FET

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

宇井, �. (2017). Al2O3およびAlTiOの化合物半導体異種材料融合集積技術への応用. (Thesis). Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10119/14253

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

宇井, 利昌. “Al2O3およびAlTiOの化合物半導体異種材料融合集積技術への応用.” 2017. Thesis, Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学. Accessed January 16, 2021. http://hdl.handle.net/10119/14253.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

宇井, 利昌. “Al2O3およびAlTiOの化合物半導体異種材料融合集積技術への応用.” 2017. Web. 16 Jan 2021.

Vancouver:

宇井 �. Al2O3およびAlTiOの化合物半導体異種材料融合集積技術への応用. [Internet] [Thesis]. Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学; 2017. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10119/14253.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

宇井 �. Al2O3およびAlTiOの化合物半導体異種材料融合集積技術への応用. [Thesis]. Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学; 2017. Available from: http://hdl.handle.net/10119/14253

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

29. WONG KAH LEONG. STUDY OF PROCESS IMPACT ON K VALUE OF LOW K DIELECTRIC MATERIAL USED IN CU / LOW K DUAL DAMASCENE INTERCONNECT.

Degree: 2003, National University of Singapore

URL: https://scholarbank.nus.edu.sg/handle/10635/154133

Subjects/Keywords: Low k dielectric; CVD; CoralTM; Etching; Plasma treatment; Stripping; Ashing; Cleaning; Integrated k

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

LEONG, W. K. (2003). STUDY OF PROCESS IMPACT ON K VALUE OF LOW K DIELECTRIC MATERIAL USED IN CU / LOW K DUAL DAMASCENE INTERCONNECT. (Thesis). National University of Singapore. Retrieved from https://scholarbank.nus.edu.sg/handle/10635/154133

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

LEONG, WONG KAH. “STUDY OF PROCESS IMPACT ON K VALUE OF LOW K DIELECTRIC MATERIAL USED IN CU / LOW K DUAL DAMASCENE INTERCONNECT.” 2003. Thesis, National University of Singapore. Accessed January 16, 2021. https://scholarbank.nus.edu.sg/handle/10635/154133.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

LEONG, WONG KAH. “STUDY OF PROCESS IMPACT ON K VALUE OF LOW K DIELECTRIC MATERIAL USED IN CU / LOW K DUAL DAMASCENE INTERCONNECT.” 2003. Web. 16 Jan 2021.

Vancouver:

LEONG WK. STUDY OF PROCESS IMPACT ON K VALUE OF LOW K DIELECTRIC MATERIAL USED IN CU / LOW K DUAL DAMASCENE INTERCONNECT. [Internet] [Thesis]. National University of Singapore; 2003. [cited 2021 Jan 16]. Available from: https://scholarbank.nus.edu.sg/handle/10635/154133.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

LEONG WK. STUDY OF PROCESS IMPACT ON K VALUE OF LOW K DIELECTRIC MATERIAL USED IN CU / LOW K DUAL DAMASCENE INTERCONNECT. [Thesis]. National University of Singapore; 2003. Available from: https://scholarbank.nus.edu.sg/handle/10635/154133

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Louisiana State University

30. Jin, Yoonyoung. Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition.

Degree: PhD, Electrical and Computer Engineering, 2005, Louisiana State University

URL: etd-05182005-120737 ; https://digitalcommons.lsu.edu/gradschool_dissertations/342

► Use of low relative dielectric constant (low-k) material as an interlayer dielectric is among important approaches to reduce the RC time delay in high performance… (more)

▼ Use of low relative dielectric constant (low-k) material as an interlayer dielectric is among important approaches to reduce the RC time delay in high performance ultra-large-scale integrated circuits. Copper metallization is another approach besides the use of low-k material, in reducing the RC delay time, because of its well-known characteristics of low resistivity and high electromigration resistance. Fluorocarbon films containing silicon (SiCF) have been developed in this work for low-k interlayer dielectric applications below 50 nm linewidth technology. The films were prepared by plasma enhanced chemical vapor deposition (PECVD) using gas precursors of tetrafluoromethane as the source of active species and disilane (5 % by volume in helium) as both an active species source and a reducing agent to control the ratio of fluorine to carbon in the films. The basic properties for these low-k interlayer dielectric films were studied along with characterization of their fabrication process. Electrical, mechanical, chemical and thermal properties were evaluated including dielectric constant, electrical field strength, surface planarity, residual stress, hardness, chemical bond structure, and shrinkage upon heat treatment. Deposition process conditions were optimized for film thermal stability while maintaining a relative dielectric constant value as low as 2.0. The average breakdown field strength of the SiCF films was 4.74 MV/cm and its optical energy gap was in the range of 2.2 to 2.4 eV. The hardness and residual stress in the SiCF films deposited under the optimized conditions were respectively measured to be in the range of 1.4 to 1.78 GPa and in the range of 11.6 to 23.2 MPa of compressive stress. For integrated microsystems as well as for ULSI circuits, surface modification of SiCF films by wet chemical treatment and by X-ray irradiation were examined to facilitate copper metallization. Feasibility of copper deposition by recently developed electroless techniques is discussed in conjunction with the studies utilizing wet chemical modification of the film surface. The effect of X-ray irradiation on the chemical structure of the films is also discussed. Additionally, means for selective surface modification of the films are introduced by exposing the films through an X-ray mask.

Subjects/Keywords: surface modification; sicf; silicon containing; fluorocarbon; pecvd; dielectrics; low-k; ultralow-k

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APA (6^th Edition):

Jin, Y. (2005). Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition. (Doctoral Dissertation). Louisiana State University. Retrieved from etd-05182005-120737 ; https://digitalcommons.lsu.edu/gradschool_dissertations/342

Chicago Manual of Style (16^th Edition):

Jin, Yoonyoung. “Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition.” 2005. Doctoral Dissertation, Louisiana State University. Accessed January 16, 2021. etd-05182005-120737 ; https://digitalcommons.lsu.edu/gradschool_dissertations/342.

MLA Handbook (7^th Edition):

Jin, Yoonyoung. “Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition.” 2005. Web. 16 Jan 2021.

Vancouver:

Jin Y. Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition. [Internet] [Doctoral dissertation]. Louisiana State University; 2005. [cited 2021 Jan 16]. Available from: etd-05182005-120737 ; https://digitalcommons.lsu.edu/gradschool_dissertations/342.

Council of Science Editors:

Jin Y. Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition. [Doctoral Dissertation]. Louisiana State University; 2005. Available from: etd-05182005-120737 ; https://digitalcommons.lsu.edu/gradschool_dissertations/342

Open Access Theses and Dissertations