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You searched for subject:(Low K). Showing records 1 – 30 of 104 total matches.

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NSYSU

1. Chen, Chi-Wen. Study On Integration of Porous Low Dielectric Constant Material.

Degree: Master, Physics, 2001, NSYSU

 As IC technology moves into the deep submicrometer regime in high performance ULSI circuits, it is required to decrease the metal pitch and to increase… (more)

Subjects/Keywords: low-k

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APA (6th Edition):

Chen, C. (2001). Study On Integration of Porous Low Dielectric Constant Material. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-092056

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Chi-Wen. “Study On Integration of Porous Low Dielectric Constant Material.” 2001. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-092056.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Chi-Wen. “Study On Integration of Porous Low Dielectric Constant Material.” 2001. Web. 16 Jan 2021.

Vancouver:

Chen C. Study On Integration of Porous Low Dielectric Constant Material. [Internet] [Thesis]. NSYSU; 2001. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-092056.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen C. Study On Integration of Porous Low Dielectric Constant Material. [Thesis]. NSYSU; 2001. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-092056

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

2. Sun, Zeming. Mechanical, Electrical And Chemical Effect Of Laser Spike Annealing On Novel Porous Low Dielectric Constant Ethyl-Bridged Organosilane.

Degree: M.S., Materials Science and Engineering, Materials Science and Engineering, 2014, Cornell University

 Scaling of semiconductor devices has also driven a need for the improvement of interconnects. As feature sizes became smaller, the parasitic capacitance increased between wires… (more)

Subjects/Keywords: Low k materials; LSA

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APA (6th Edition):

Sun, Z. (2014). Mechanical, Electrical And Chemical Effect Of Laser Spike Annealing On Novel Porous Low Dielectric Constant Ethyl-Bridged Organosilane. (Masters Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/38963

Chicago Manual of Style (16th Edition):

Sun, Zeming. “Mechanical, Electrical And Chemical Effect Of Laser Spike Annealing On Novel Porous Low Dielectric Constant Ethyl-Bridged Organosilane.” 2014. Masters Thesis, Cornell University. Accessed January 16, 2021. http://hdl.handle.net/1813/38963.

MLA Handbook (7th Edition):

Sun, Zeming. “Mechanical, Electrical And Chemical Effect Of Laser Spike Annealing On Novel Porous Low Dielectric Constant Ethyl-Bridged Organosilane.” 2014. Web. 16 Jan 2021.

Vancouver:

Sun Z. Mechanical, Electrical And Chemical Effect Of Laser Spike Annealing On Novel Porous Low Dielectric Constant Ethyl-Bridged Organosilane. [Internet] [Masters thesis]. Cornell University; 2014. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1813/38963.

Council of Science Editors:

Sun Z. Mechanical, Electrical And Chemical Effect Of Laser Spike Annealing On Novel Porous Low Dielectric Constant Ethyl-Bridged Organosilane. [Masters Thesis]. Cornell University; 2014. Available from: http://hdl.handle.net/1813/38963

3. Bêche, Elodie. Etude des collages directs hydrophiles mettant en jeu des couches diélectriques : Direct bonding study with dielectric bonding layers.

Degree: Docteur es, Physique des matériaux, 2017, Université Grenoble Alpes (ComUE)

Le collage direct consiste à l’adhésion spontanée dès température ambiante de deux surfaces sans ajout de matière polymère à l’interface de collage. Réalisable sous vide… (more)

Subjects/Keywords: Collage; Direct; Low k; High k; Hydrophilie; Diélectrique; Bonding; Direct; Low k; High k; Hydrophilic; Dielectric; 530

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APA (6th Edition):

Bêche, E. (2017). Etude des collages directs hydrophiles mettant en jeu des couches diélectriques : Direct bonding study with dielectric bonding layers. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2017GREAY064

Chicago Manual of Style (16th Edition):

Bêche, Elodie. “Etude des collages directs hydrophiles mettant en jeu des couches diélectriques : Direct bonding study with dielectric bonding layers.” 2017. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed January 16, 2021. http://www.theses.fr/2017GREAY064.

MLA Handbook (7th Edition):

Bêche, Elodie. “Etude des collages directs hydrophiles mettant en jeu des couches diélectriques : Direct bonding study with dielectric bonding layers.” 2017. Web. 16 Jan 2021.

Vancouver:

Bêche E. Etude des collages directs hydrophiles mettant en jeu des couches diélectriques : Direct bonding study with dielectric bonding layers. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2017. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2017GREAY064.

Council of Science Editors:

Bêche E. Etude des collages directs hydrophiles mettant en jeu des couches diélectriques : Direct bonding study with dielectric bonding layers. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2017. Available from: http://www.theses.fr/2017GREAY064


Penn State University

4. Bittel, Brad. STUDY OF DEFECT STRUCTURE AND ELECTRICAL TRANSPORT IN BACK END OF LINE DIELECTRICS AND SIC MOSFETS .

Degree: 2011, Penn State University

 SiC MOSFETs show great potential for use in high power and high temperature environments. However, the technology is still in its infancy and is limited… (more)

Subjects/Keywords: magnetic resonance; EPR; low-k; BEOL; SiC

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APA (6th Edition):

Bittel, B. (2011). STUDY OF DEFECT STRUCTURE AND ELECTRICAL TRANSPORT IN BACK END OF LINE DIELECTRICS AND SIC MOSFETS . (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/12636

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bittel, Brad. “STUDY OF DEFECT STRUCTURE AND ELECTRICAL TRANSPORT IN BACK END OF LINE DIELECTRICS AND SIC MOSFETS .” 2011. Thesis, Penn State University. Accessed January 16, 2021. https://submit-etda.libraries.psu.edu/catalog/12636.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bittel, Brad. “STUDY OF DEFECT STRUCTURE AND ELECTRICAL TRANSPORT IN BACK END OF LINE DIELECTRICS AND SIC MOSFETS .” 2011. Web. 16 Jan 2021.

Vancouver:

Bittel B. STUDY OF DEFECT STRUCTURE AND ELECTRICAL TRANSPORT IN BACK END OF LINE DIELECTRICS AND SIC MOSFETS . [Internet] [Thesis]. Penn State University; 2011. [cited 2021 Jan 16]. Available from: https://submit-etda.libraries.psu.edu/catalog/12636.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bittel B. STUDY OF DEFECT STRUCTURE AND ELECTRICAL TRANSPORT IN BACK END OF LINE DIELECTRICS AND SIC MOSFETS . [Thesis]. Penn State University; 2011. Available from: https://submit-etda.libraries.psu.edu/catalog/12636

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université Montpellier II

5. Lépinay, Matthieu J. Impact des chimies de nettoyage et des traitements plasma sur les matériaux diélectriques à basse permittivité : Impact of plasma treatments and cleaning chemistries on porous materials with very low permittivity.

Degree: Docteur es, Chimie et physicochimie des matériaux, 2014, Université Montpellier II

Nous présentons dans ce travail l'impact du procédé de fabrication d'un circuit intégré (nœud technologique 28 nm) sur le matériau diélectrique poreux utilisé pour isoler… (more)

Subjects/Keywords: Plasma; Chimie; Low-K; Microélectronique; Nano; Poreux; Plasma; Chemistry; Low-K; Microelectronics; Nano; Porous

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APA (6th Edition):

Lépinay, M. J. (2014). Impact des chimies de nettoyage et des traitements plasma sur les matériaux diélectriques à basse permittivité : Impact of plasma treatments and cleaning chemistries on porous materials with very low permittivity. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2014MON20097

Chicago Manual of Style (16th Edition):

Lépinay, Matthieu J. “Impact des chimies de nettoyage et des traitements plasma sur les matériaux diélectriques à basse permittivité : Impact of plasma treatments and cleaning chemistries on porous materials with very low permittivity.” 2014. Doctoral Dissertation, Université Montpellier II. Accessed January 16, 2021. http://www.theses.fr/2014MON20097.

MLA Handbook (7th Edition):

Lépinay, Matthieu J. “Impact des chimies de nettoyage et des traitements plasma sur les matériaux diélectriques à basse permittivité : Impact of plasma treatments and cleaning chemistries on porous materials with very low permittivity.” 2014. Web. 16 Jan 2021.

Vancouver:

Lépinay MJ. Impact des chimies de nettoyage et des traitements plasma sur les matériaux diélectriques à basse permittivité : Impact of plasma treatments and cleaning chemistries on porous materials with very low permittivity. [Internet] [Doctoral dissertation]. Université Montpellier II; 2014. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2014MON20097.

Council of Science Editors:

Lépinay MJ. Impact des chimies de nettoyage et des traitements plasma sur les matériaux diélectriques à basse permittivité : Impact of plasma treatments and cleaning chemistries on porous materials with very low permittivity. [Doctoral Dissertation]. Université Montpellier II; 2014. Available from: http://www.theses.fr/2014MON20097

6. Naas, Abdelkrim. Etude de l'oxyde de silicium implanté krypton ou xénon : évolution de la constante diélectrique. : Study of Silica implanted krypton or xenon : evolution of dielectric constant.

Degree: Docteur es, Physique des matériaux, 2010, Université d'Orléans

Ce travail de thèse consiste en une étude approfondie du comportement de l'oxyde de silicium implanté Kr ou Xe pour son application comme matériau à… (more)

Subjects/Keywords: Technologie Low k; Implantation ionique; Porosité; Fonction diélectrique; Low k; Ionic implantation; Porosity; Dielectric function

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APA (6th Edition):

Naas, A. (2010). Etude de l'oxyde de silicium implanté krypton ou xénon : évolution de la constante diélectrique. : Study of Silica implanted krypton or xenon : evolution of dielectric constant. (Doctoral Dissertation). Université d'Orléans. Retrieved from http://www.theses.fr/2010ORLE2059

Chicago Manual of Style (16th Edition):

Naas, Abdelkrim. “Etude de l'oxyde de silicium implanté krypton ou xénon : évolution de la constante diélectrique. : Study of Silica implanted krypton or xenon : evolution of dielectric constant.” 2010. Doctoral Dissertation, Université d'Orléans. Accessed January 16, 2021. http://www.theses.fr/2010ORLE2059.

MLA Handbook (7th Edition):

Naas, Abdelkrim. “Etude de l'oxyde de silicium implanté krypton ou xénon : évolution de la constante diélectrique. : Study of Silica implanted krypton or xenon : evolution of dielectric constant.” 2010. Web. 16 Jan 2021.

Vancouver:

Naas A. Etude de l'oxyde de silicium implanté krypton ou xénon : évolution de la constante diélectrique. : Study of Silica implanted krypton or xenon : evolution of dielectric constant. [Internet] [Doctoral dissertation]. Université d'Orléans; 2010. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2010ORLE2059.

Council of Science Editors:

Naas A. Etude de l'oxyde de silicium implanté krypton ou xénon : évolution de la constante diélectrique. : Study of Silica implanted krypton or xenon : evolution of dielectric constant. [Doctoral Dissertation]. Université d'Orléans; 2010. Available from: http://www.theses.fr/2010ORLE2059


NSYSU

7. Peng, Han-Kuang. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2013, NSYSU

 In this thesis, silicon dioxide (SiO2) doped hafnium oxide (HfO2) is applied to form low-k doped high-k materials, and the multilayer structure is used to… (more)

Subjects/Keywords: RRAM; SiO2; High-K; HfO2; energy dissipation rate; Low-K; critical energy

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APA (6th Edition):

Peng, H. (2013). Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Peng, Han-Kuang. “Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.” 2013. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Peng, Han-Kuang. “Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.” 2013. Web. 16 Jan 2021.

Vancouver:

Peng H. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. [Internet] [Thesis]. NSYSU; 2013. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Peng H. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

8. Yang, Ya-Liang. Electric characteristics of Metal/Insulator/Metal with Damascene Structure under influence of Mechanical Stress.

Degree: PhD, Mechanical and Electro-Mechanical Engineering, 2013, NSYSU

 Lead (Pb) free processes have been adopted into Wafer Level Chip Scale Package technology in order to meet the requirements of green environmental production, in… (more)

Subjects/Keywords: energy barrier; mechanical stress; low-k dielectric; capacitance; leakage currents

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APA (6th Edition):

Yang, Y. (2013). Electric characteristics of Metal/Insulator/Metal with Damascene Structure under influence of Mechanical Stress. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-233417

Chicago Manual of Style (16th Edition):

Yang, Ya-Liang. “Electric characteristics of Metal/Insulator/Metal with Damascene Structure under influence of Mechanical Stress.” 2013. Doctoral Dissertation, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-233417.

MLA Handbook (7th Edition):

Yang, Ya-Liang. “Electric characteristics of Metal/Insulator/Metal with Damascene Structure under influence of Mechanical Stress.” 2013. Web. 16 Jan 2021.

Vancouver:

Yang Y. Electric characteristics of Metal/Insulator/Metal with Damascene Structure under influence of Mechanical Stress. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-233417.

Council of Science Editors:

Yang Y. Electric characteristics of Metal/Insulator/Metal with Damascene Structure under influence of Mechanical Stress. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630113-233417


NSYSU

9. Lin, Zen-Kuan. X-ray Exposure on Low Dielectric Constant Materials.

Degree: Master, Physics, 2001, NSYSU

 Abstract As integrated circuit dimensions continue to shrink, interconnect RC delay becomes an increasingly serious problem. Fabrication of interconnect structures using new materials of low(more)

Subjects/Keywords: low k; X-ray

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APA (6th Edition):

Lin, Z. (2001). X-ray Exposure on Low Dielectric Constant Materials. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-094147

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Zen-Kuan. “X-ray Exposure on Low Dielectric Constant Materials.” 2001. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-094147.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Zen-Kuan. “X-ray Exposure on Low Dielectric Constant Materials.” 2001. Web. 16 Jan 2021.

Vancouver:

Lin Z. X-ray Exposure on Low Dielectric Constant Materials. [Internet] [Thesis]. NSYSU; 2001. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-094147.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin Z. X-ray Exposure on Low Dielectric Constant Materials. [Thesis]. NSYSU; 2001. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0704101-094147

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. Mhaisagar Yogesh Suresh. Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;.

Degree: International, 2014, North Maharashtra University

The advancement in fabrication processes results in revolution in newlinetechnology that helps in scaling the device size towards the nanoregime with newlineincrease in device speed… (more)

Subjects/Keywords: Electrical Characterization; Porous Low-k Thin Films; Nanoelectronics

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APA (6th Edition):

Suresh, M. Y. (2014). Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;. (Thesis). North Maharashtra University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/19452

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Suresh, Mhaisagar Yogesh. “Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;.” 2014. Thesis, North Maharashtra University. Accessed January 16, 2021. http://shodhganga.inflibnet.ac.in/handle/10603/19452.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Suresh, Mhaisagar Yogesh. “Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;.” 2014. Web. 16 Jan 2021.

Vancouver:

Suresh MY. Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;. [Internet] [Thesis]. North Maharashtra University; 2014. [cited 2021 Jan 16]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/19452.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Suresh MY. Surface Modification and Electrical Characterization of Porous Low k Thin Films for Nanoelectronics Applications;. [Thesis]. North Maharashtra University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/19452

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

11. Khawaji, Ibrahim Hussain. ENGINEERED THIN FILMS OF PARYLENE C AS ELECTRICAL INSULATORS FOR FLEXIBLE ELECTRONICS.

Degree: 2019, Penn State University

 The use of a single material as a multifunctional insulator (i.e., substrate, gate dielectric, interlayer dielectric, and passivation layer) in the same device will reduce… (more)

Subjects/Keywords: ENGINEERED THIN FILMS; PARYLENE C; ELECTRICAL INSULATORS; FLEXIBLE ELECTRONICS; low-k

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APA (6th Edition):

Khawaji, I. H. (2019). ENGINEERED THIN FILMS OF PARYLENE C AS ELECTRICAL INSULATORS FOR FLEXIBLE ELECTRONICS. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/16397ihk101

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Khawaji, Ibrahim Hussain. “ENGINEERED THIN FILMS OF PARYLENE C AS ELECTRICAL INSULATORS FOR FLEXIBLE ELECTRONICS.” 2019. Thesis, Penn State University. Accessed January 16, 2021. https://submit-etda.libraries.psu.edu/catalog/16397ihk101.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Khawaji, Ibrahim Hussain. “ENGINEERED THIN FILMS OF PARYLENE C AS ELECTRICAL INSULATORS FOR FLEXIBLE ELECTRONICS.” 2019. Web. 16 Jan 2021.

Vancouver:

Khawaji IH. ENGINEERED THIN FILMS OF PARYLENE C AS ELECTRICAL INSULATORS FOR FLEXIBLE ELECTRONICS. [Internet] [Thesis]. Penn State University; 2019. [cited 2021 Jan 16]. Available from: https://submit-etda.libraries.psu.edu/catalog/16397ihk101.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Khawaji IH. ENGINEERED THIN FILMS OF PARYLENE C AS ELECTRICAL INSULATORS FOR FLEXIBLE ELECTRONICS. [Thesis]. Penn State University; 2019. Available from: https://submit-etda.libraries.psu.edu/catalog/16397ihk101

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

12. Pomorski, Thomas Anthony. defect structure and electronic transport in low-k films used for back end of line dielectrics.

Degree: 2013, Penn State University

 This work focuses on electronic transport and defect structure in multiple novel dielectric systems used for back end of line (BEOL) applications. BEOL dielectrics with… (more)

Subjects/Keywords: electronic materials; EPR; low-k; back end of line

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APA (6th Edition):

Pomorski, T. A. (2013). defect structure and electronic transport in low-k films used for back end of line dielectrics. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/19971

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pomorski, Thomas Anthony. “defect structure and electronic transport in low-k films used for back end of line dielectrics.” 2013. Thesis, Penn State University. Accessed January 16, 2021. https://submit-etda.libraries.psu.edu/catalog/19971.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pomorski, Thomas Anthony. “defect structure and electronic transport in low-k films used for back end of line dielectrics.” 2013. Web. 16 Jan 2021.

Vancouver:

Pomorski TA. defect structure and electronic transport in low-k films used for back end of line dielectrics. [Internet] [Thesis]. Penn State University; 2013. [cited 2021 Jan 16]. Available from: https://submit-etda.libraries.psu.edu/catalog/19971.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pomorski TA. defect structure and electronic transport in low-k films used for back end of line dielectrics. [Thesis]. Penn State University; 2013. Available from: https://submit-etda.libraries.psu.edu/catalog/19971

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

13. Aliyaru Kunju, Ashkar Ali. Design Fabrication and Characterization of Antimonide MOS Transistors.

Degree: 2012, Penn State University

 Future transistor scaling will require enhancement in device electrostatics (multigate), channel transport enhancement (beyond strained Silicon) and reduction in parasitics (contact, junction engineering etc.). Due… (more)

Subjects/Keywords: MOS; Low Power; Antimonide; MOSFET; High-k Dielectric; Quantum Well; CV

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APA (6th Edition):

Aliyaru Kunju, A. A. (2012). Design Fabrication and Characterization of Antimonide MOS Transistors. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/14777

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Aliyaru Kunju, Ashkar Ali. “Design Fabrication and Characterization of Antimonide MOS Transistors.” 2012. Thesis, Penn State University. Accessed January 16, 2021. https://submit-etda.libraries.psu.edu/catalog/14777.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Aliyaru Kunju, Ashkar Ali. “Design Fabrication and Characterization of Antimonide MOS Transistors.” 2012. Web. 16 Jan 2021.

Vancouver:

Aliyaru Kunju AA. Design Fabrication and Characterization of Antimonide MOS Transistors. [Internet] [Thesis]. Penn State University; 2012. [cited 2021 Jan 16]. Available from: https://submit-etda.libraries.psu.edu/catalog/14777.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Aliyaru Kunju AA. Design Fabrication and Characterization of Antimonide MOS Transistors. [Thesis]. Penn State University; 2012. Available from: https://submit-etda.libraries.psu.edu/catalog/14777

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

14. McSpadden, Rachael Lynne. Method development for long-term laboratory studies evaluating contaminant assimilation processes.

Degree: MS(M.S.), Civil and Environmental Engineering, 2016, Colorado State University

 Remediation technologies for soil and groundwater that are impacted by chlorinated solvents are limited when reducing contaminant concentrations below maximum contaminant levels (MCLs) established by… (more)

Subjects/Keywords: low-k zones

…indicated by red) in a simplified heterogeneous system of transmissive zone and low-k zones… …Sale 2010). The slow release of contaminants from low-k zones challenges current… …and out of low-k zones restricts our predictive models’ ability to forecast future behavior… …drive contaminant fate and transport within low-k zones. This knowledge will support rational… …long periods of time, the most important process in plumes may be occurring in low-k zones… 

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APA (6th Edition):

McSpadden, R. L. (2016). Method development for long-term laboratory studies evaluating contaminant assimilation processes. (Masters Thesis). Colorado State University. Retrieved from http://hdl.handle.net/10217/178918

Chicago Manual of Style (16th Edition):

McSpadden, Rachael Lynne. “Method development for long-term laboratory studies evaluating contaminant assimilation processes.” 2016. Masters Thesis, Colorado State University. Accessed January 16, 2021. http://hdl.handle.net/10217/178918.

MLA Handbook (7th Edition):

McSpadden, Rachael Lynne. “Method development for long-term laboratory studies evaluating contaminant assimilation processes.” 2016. Web. 16 Jan 2021.

Vancouver:

McSpadden RL. Method development for long-term laboratory studies evaluating contaminant assimilation processes. [Internet] [Masters thesis]. Colorado State University; 2016. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10217/178918.

Council of Science Editors:

McSpadden RL. Method development for long-term laboratory studies evaluating contaminant assimilation processes. [Masters Thesis]. Colorado State University; 2016. Available from: http://hdl.handle.net/10217/178918


University of Minnesota

15. Rangnekar, Neel. Ultra-thin MFI zeolite films: Synthesis, Characterization and Progress Toward Industrial Applications.

Degree: PhD, Chemical Engineering, 2017, University of Minnesota

 Separation processes account for 10-15% of US energy consumption. A large fraction of that energy is consumed by energy-inefficient thermal separation processes like distillation. If… (more)

Subjects/Keywords: 2-dimensional materials; Low-k films; Membranes; Zeolites

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APA (6th Edition):

Rangnekar, N. (2017). Ultra-thin MFI zeolite films: Synthesis, Characterization and Progress Toward Industrial Applications. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/192649

Chicago Manual of Style (16th Edition):

Rangnekar, Neel. “Ultra-thin MFI zeolite films: Synthesis, Characterization and Progress Toward Industrial Applications.” 2017. Doctoral Dissertation, University of Minnesota. Accessed January 16, 2021. http://hdl.handle.net/11299/192649.

MLA Handbook (7th Edition):

Rangnekar, Neel. “Ultra-thin MFI zeolite films: Synthesis, Characterization and Progress Toward Industrial Applications.” 2017. Web. 16 Jan 2021.

Vancouver:

Rangnekar N. Ultra-thin MFI zeolite films: Synthesis, Characterization and Progress Toward Industrial Applications. [Internet] [Doctoral dissertation]. University of Minnesota; 2017. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/11299/192649.

Council of Science Editors:

Rangnekar N. Ultra-thin MFI zeolite films: Synthesis, Characterization and Progress Toward Industrial Applications. [Doctoral Dissertation]. University of Minnesota; 2017. Available from: http://hdl.handle.net/11299/192649

16. Goethals, Frederik. Periodic mesoporous organosilicas for application as low-k dielectric materials.

Degree: 2012, Ghent University

 In semiconductor manufacturing, a low-k dielectric is a material with a small dielectric constant relative to silicon dioxide. In digital circuits, insulating dielectrics separate the… (more)

Subjects/Keywords: Physics and Astronomy; PMO; thin films; low-k materials

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APA (6th Edition):

Goethals, F. (2012). Periodic mesoporous organosilicas for application as low-k dielectric materials. (Thesis). Ghent University. Retrieved from http://hdl.handle.net/1854/LU-3069897

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Goethals, Frederik. “Periodic mesoporous organosilicas for application as low-k dielectric materials.” 2012. Thesis, Ghent University. Accessed January 16, 2021. http://hdl.handle.net/1854/LU-3069897.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Goethals, Frederik. “Periodic mesoporous organosilicas for application as low-k dielectric materials.” 2012. Web. 16 Jan 2021.

Vancouver:

Goethals F. Periodic mesoporous organosilicas for application as low-k dielectric materials. [Internet] [Thesis]. Ghent University; 2012. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1854/LU-3069897.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Goethals F. Periodic mesoporous organosilicas for application as low-k dielectric materials. [Thesis]. Ghent University; 2012. Available from: http://hdl.handle.net/1854/LU-3069897

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

17. Huang, Huai, Ph. D. Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair.

Degree: PhD, Physics, 2012, University of Texas – Austin

 The Ultra-low-k material is required to reduce the RC time delay in the integrated circuits. However, the integration of the porous low-k material into the… (more)

Subjects/Keywords: Low-k; Dielectric; Plasma

…of low-k, including diffusion, reaction and recombination, was described analytically with… …process is also used to investigate the oxygen plasma damage to patterned low-k structure, which… …1 1.1. Development of Cu/low-k interconnect… …5 1.3 Cu/low-k integration challenges… …63 Chapter 4: Oxidative plasma induced damage to porous low-k dielectrics ....... 65 4.1… 

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APA (6th Edition):

Huang, Huai, P. D. (2012). Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/ETD-UT-2012-08-5981

Chicago Manual of Style (16th Edition):

Huang, Huai, Ph D. “Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair.” 2012. Doctoral Dissertation, University of Texas – Austin. Accessed January 16, 2021. http://hdl.handle.net/2152/ETD-UT-2012-08-5981.

MLA Handbook (7th Edition):

Huang, Huai, Ph D. “Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair.” 2012. Web. 16 Jan 2021.

Vancouver:

Huang, Huai PD. Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2012. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/2152/ETD-UT-2012-08-5981.

Council of Science Editors:

Huang, Huai PD. Plasma damaging process of porous ultra-low-k dielectrics and dielectric repair. [Doctoral Dissertation]. University of Texas – Austin; 2012. Available from: http://hdl.handle.net/2152/ETD-UT-2012-08-5981


Iowa State University

18. Shoeb, Juline. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity.

Degree: 2012, Iowa State University

 Plasma-surface interactions are very important in the fabrication of the nm-sized features of integrated circuits. Plasma processes are employed to produce high-resolution patterns in many… (more)

Subjects/Keywords: Adsorption; Dielectric constant; High-k; Low-k; Plasma damage; Selectivity; Electrical and Electronics; Nanoscience and Nanotechnology; Plasma and Beam Physics

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APA (6th Edition):

Shoeb, J. (2012). Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity. (Thesis). Iowa State University. Retrieved from https://lib.dr.iastate.edu/etd/12460

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Shoeb, Juline. “Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity.” 2012. Thesis, Iowa State University. Accessed January 16, 2021. https://lib.dr.iastate.edu/etd/12460.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Shoeb, Juline. “Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity.” 2012. Web. 16 Jan 2021.

Vancouver:

Shoeb J. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity. [Internet] [Thesis]. Iowa State University; 2012. [cited 2021 Jan 16]. Available from: https://lib.dr.iastate.edu/etd/12460.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Shoeb J. Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity. [Thesis]. Iowa State University; 2012. Available from: https://lib.dr.iastate.edu/etd/12460

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

19. Wei, Hsuan-Yi. Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric.

Degree: Master, Physics, 2002, NSYSU

 Abstract As ULSI circuits are scaled down to deep submicron regime, interconnect delay becomes increasingly dominant over intrinsic gate delay. To reduce the RC delay… (more)

Subjects/Keywords: HSQ; Low-Dielectric constant; Hydrogen Silsesqnioxane; low k

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APA (6th Edition):

Wei, H. (2002). Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911102-145452

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wei, Hsuan-Yi. “Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric.” 2002. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911102-145452.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wei, Hsuan-Yi. “Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric.” 2002. Web. 16 Jan 2021.

Vancouver:

Wei H. Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric. [Internet] [Thesis]. NSYSU; 2002. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911102-145452.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wei H. Investigation of Low-Dielectric constant Hydrogen Silsesqnioxane as Intermetal Dielectric. [Thesis]. NSYSU; 2002. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0911102-145452

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

20. Tsai, Hong-Ming. Study on ultra low-k silicon oxide with nano-porous structure.

Degree: Master, Physics, 2002, NSYSU

 In this thesis, the leakage-mechanism after O2-plasma treatments was investigated. And the mechanism is transformed from Schottky emission into ionic conduction due to moisture uptake… (more)

Subjects/Keywords: low-k; low dielectric constant; copper; nano-structure; porous

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APA (6th Edition):

Tsai, H. (2002). Study on ultra low-k silicon oxide with nano-porous structure. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708102-111915

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tsai, Hong-Ming. “Study on ultra low-k silicon oxide with nano-porous structure.” 2002. Thesis, NSYSU. Accessed January 16, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708102-111915.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tsai, Hong-Ming. “Study on ultra low-k silicon oxide with nano-porous structure.” 2002. Web. 16 Jan 2021.

Vancouver:

Tsai H. Study on ultra low-k silicon oxide with nano-porous structure. [Internet] [Thesis]. NSYSU; 2002. [cited 2021 Jan 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708102-111915.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tsai H. Study on ultra low-k silicon oxide with nano-porous structure. [Thesis]. NSYSU; 2002. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0708102-111915

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

21. Verriere, Virginie. Analyse électrique de diélectriques SiOCH poreux pour évaluer la fiabilité des interconnexions avancées : Electrical analysis of porous SiOCH dielectrics to evaluate reliability of advanced interconnects.

Degree: Docteur es, Physique des matériaux, 2011, Université de Grenoble

Avec la miniaturisation des circuits intégrés, le délai de transmission dû aux interconnexions a fortement augmenté. Pour limiter cet effet parasite, le SiO2 intégré en… (more)

Subjects/Keywords: Interconnexions; Diélectrique Low-k; SiOCH poreux; Fiabilité; Courant de fuite; Spectroscopie d'impédance; Interconnects; Low-k dielectric; Porous SiOCH; Reliability; Leakage current; Impedance spectroscopy

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APA (6th Edition):

Verriere, V. (2011). Analyse électrique de diélectriques SiOCH poreux pour évaluer la fiabilité des interconnexions avancées : Electrical analysis of porous SiOCH dielectrics to evaluate reliability of advanced interconnects. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENY015

Chicago Manual of Style (16th Edition):

Verriere, Virginie. “Analyse électrique de diélectriques SiOCH poreux pour évaluer la fiabilité des interconnexions avancées : Electrical analysis of porous SiOCH dielectrics to evaluate reliability of advanced interconnects.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed January 16, 2021. http://www.theses.fr/2011GRENY015.

MLA Handbook (7th Edition):

Verriere, Virginie. “Analyse électrique de diélectriques SiOCH poreux pour évaluer la fiabilité des interconnexions avancées : Electrical analysis of porous SiOCH dielectrics to evaluate reliability of advanced interconnects.” 2011. Web. 16 Jan 2021.

Vancouver:

Verriere V. Analyse électrique de diélectriques SiOCH poreux pour évaluer la fiabilité des interconnexions avancées : Electrical analysis of porous SiOCH dielectrics to evaluate reliability of advanced interconnects. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2021 Jan 16]. Available from: http://www.theses.fr/2011GRENY015.

Council of Science Editors:

Verriere V. Analyse électrique de diélectriques SiOCH poreux pour évaluer la fiabilité des interconnexions avancées : Electrical analysis of porous SiOCH dielectrics to evaluate reliability of advanced interconnects. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENY015


Brno University of Technology

22. Menčík, Přemysl. Příprava poly-para-xylylenových vrstev a charakteriazace jejich vlastností: Poly-para-xylylene films preparation and characterization of their properties.

Degree: 2018, Brno University of Technology

 Poly-p-xylylene is a basic polymer of parylene family. It was discovered in 50s of the 20th century. In practical applications, there are used several derivates.… (more)

Subjects/Keywords: Parylen; poly-p-xylylen; tenké vrstvy; protikorozní ochrana; low-k materiál; CVD; Parylene; poly-p-xylylene; Thin films; Corrosion protection; Low-k material; DVD

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APA (6th Edition):

Menčík, P. (2018). Příprava poly-para-xylylenových vrstev a charakteriazace jejich vlastností: Poly-para-xylylene films preparation and characterization of their properties. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/8224

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Menčík, Přemysl. “Příprava poly-para-xylylenových vrstev a charakteriazace jejich vlastností: Poly-para-xylylene films preparation and characterization of their properties.” 2018. Thesis, Brno University of Technology. Accessed January 16, 2021. http://hdl.handle.net/11012/8224.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Menčík, Přemysl. “Příprava poly-para-xylylenových vrstev a charakteriazace jejich vlastností: Poly-para-xylylene films preparation and characterization of their properties.” 2018. Web. 16 Jan 2021.

Vancouver:

Menčík P. Příprava poly-para-xylylenových vrstev a charakteriazace jejich vlastností: Poly-para-xylylene films preparation and characterization of their properties. [Internet] [Thesis]. Brno University of Technology; 2018. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/11012/8224.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Menčík P. Příprava poly-para-xylylenových vrstev a charakteriazace jejich vlastností: Poly-para-xylylene films preparation and characterization of their properties. [Thesis]. Brno University of Technology; 2018. Available from: http://hdl.handle.net/11012/8224

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of North Texas

23. Nerusu, Pawan Kumar. Supercritical Silylation and Stability of Silyl Groups.

Degree: 2006, University of North Texas

 Methylsilsesquioxane (MSQ) and organosilicate glass (OSG) are the materials under this study because they exhibit the dielectric constant values necessary for future IC technology requirements.… (more)

Subjects/Keywords: Silylation.; low-k; trialkylchlorosilanes; supercritical CO2; repair in low-k

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APA (6th Edition):

Nerusu, P. K. (2006). Supercritical Silylation and Stability of Silyl Groups. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc5216/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Nerusu, Pawan Kumar. “Supercritical Silylation and Stability of Silyl Groups.” 2006. Thesis, University of North Texas. Accessed January 16, 2021. https://digital.library.unt.edu/ark:/67531/metadc5216/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Nerusu, Pawan Kumar. “Supercritical Silylation and Stability of Silyl Groups.” 2006. Web. 16 Jan 2021.

Vancouver:

Nerusu PK. Supercritical Silylation and Stability of Silyl Groups. [Internet] [Thesis]. University of North Texas; 2006. [cited 2021 Jan 16]. Available from: https://digital.library.unt.edu/ark:/67531/metadc5216/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Nerusu PK. Supercritical Silylation and Stability of Silyl Groups. [Thesis]. University of North Texas; 2006. Available from: https://digital.library.unt.edu/ark:/67531/metadc5216/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of North Texas

24. Kazi, Haseeb. Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications.

Degree: 2015, University of North Texas

 In-situ x-ray photoemission (XPS) and ex-situ FTIR studies of nanoporous organosilicate glass (OSG) films point to the separate roles of radicals vs. VUV photons in… (more)

Subjects/Keywords: low-k dielectric films; plasma damage; pore-sealing; Dielectric films.; Amorphous substances.; Plasma chemistry.

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APA (6th Edition):

Kazi, H. (2015). Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc801876/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kazi, Haseeb. “Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications.” 2015. Thesis, University of North Texas. Accessed January 16, 2021. https://digital.library.unt.edu/ark:/67531/metadc801876/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kazi, Haseeb. “Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications.” 2015. Web. 16 Jan 2021.

Vancouver:

Kazi H. Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications. [Internet] [Thesis]. University of North Texas; 2015. [cited 2021 Jan 16]. Available from: https://digital.library.unt.edu/ark:/67531/metadc801876/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kazi H. Plasma Interactions on Organosilicate Glass Dielectric Films and Emerging Amorphous Materials- Approach to Pore Sealing and Chemical Modifications. [Thesis]. University of North Texas; 2015. Available from: https://digital.library.unt.edu/ark:/67531/metadc801876/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arizona

25. Iqbal, Asad. Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces .

Degree: 2007, University of Arizona

 Ultra low-k dielectric films are expected to widely replace SiO2 as the interlayer dielectric for the next-generation microelectronic devices. A challenge facing the integration of… (more)

Subjects/Keywords: dielectrics; moisture; outgassing; desoprtion; low k

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APA (6th Edition):

Iqbal, A. (2007). Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/196143

Chicago Manual of Style (16th Edition):

Iqbal, Asad. “Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces .” 2007. Doctoral Dissertation, University of Arizona. Accessed January 16, 2021. http://hdl.handle.net/10150/196143.

MLA Handbook (7th Edition):

Iqbal, Asad. “Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces .” 2007. Web. 16 Jan 2021.

Vancouver:

Iqbal A. Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces . [Internet] [Doctoral dissertation]. University of Arizona; 2007. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10150/196143.

Council of Science Editors:

Iqbal A. Interaction of Molecular Contaminants with Low-k Dielectric Films and Metal Surfaces . [Doctoral Dissertation]. University of Arizona; 2007. Available from: http://hdl.handle.net/10150/196143


University of North Texas

26. Behera, Swayambhu Prasad. The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms.

Degree: 2011, University of North Texas

 Nanoporous low-k dielectrics are used for integrated circuit interconnects to reduce the propagation delays, and cross talk noise between metal wires as an alternative material… (more)

Subjects/Keywords: Low-k dielectrics; He plasma; O2 plasma; carbon abstraction; plasma damage; AFM; FTIR; nanoporous ULK

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APA (6th Edition):

Behera, S. P. (2011). The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc84175/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Behera, Swayambhu Prasad. “The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms.” 2011. Thesis, University of North Texas. Accessed January 16, 2021. https://digital.library.unt.edu/ark:/67531/metadc84175/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Behera, Swayambhu Prasad. “The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms.” 2011. Web. 16 Jan 2021.

Vancouver:

Behera SP. The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms. [Internet] [Thesis]. University of North Texas; 2011. [cited 2021 Jan 16]. Available from: https://digital.library.unt.edu/ark:/67531/metadc84175/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Behera SP. The Interactions of Plasma with Low-k Dielectrics: Fundamental Damage and Protection Mechanisms. [Thesis]. University of North Texas; 2011. Available from: https://digital.library.unt.edu/ark:/67531/metadc84175/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Maryland

27. Weilnboeck, Florian. PLASMA INTERACTIONS WITH MASKING MATERIALS FOR NANOFABRICATION.

Degree: Material Science and Engineering, 2011, University of Maryland

 Plasma-based transfer of patterns into other materials is a key process for production of nano-scale devices used in micro-electronic technology. With the continuously decreasing feature-size… (more)

Subjects/Keywords: Plasma physics; low-k materials; metal hardmask; pattern transfer; photoresist; semiconductor; UV radiation

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APA (6th Edition):

Weilnboeck, F. (2011). PLASMA INTERACTIONS WITH MASKING MATERIALS FOR NANOFABRICATION. (Thesis). University of Maryland. Retrieved from http://hdl.handle.net/1903/12280

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Weilnboeck, Florian. “PLASMA INTERACTIONS WITH MASKING MATERIALS FOR NANOFABRICATION.” 2011. Thesis, University of Maryland. Accessed January 16, 2021. http://hdl.handle.net/1903/12280.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Weilnboeck, Florian. “PLASMA INTERACTIONS WITH MASKING MATERIALS FOR NANOFABRICATION.” 2011. Web. 16 Jan 2021.

Vancouver:

Weilnboeck F. PLASMA INTERACTIONS WITH MASKING MATERIALS FOR NANOFABRICATION. [Internet] [Thesis]. University of Maryland; 2011. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1903/12280.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Weilnboeck F. PLASMA INTERACTIONS WITH MASKING MATERIALS FOR NANOFABRICATION. [Thesis]. University of Maryland; 2011. Available from: http://hdl.handle.net/1903/12280

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

28. 宇井, 利昌. Al2O3およびAlTiOの化合物半導体異種材料融合集積技術への応用.

Degree: 博士(マテリアルサイエンス), 2017, Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学

Supervisor:鈴木 寿一

マテリアルサイエンス研究科

博士

Subjects/Keywords: AlTiO; heterogeneous integration; InAs/high-k/low-k; modulation doping; FET

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APA (6th Edition):

宇井, . (2017). Al2O3およびAlTiOの化合物半導体異種材料融合集積技術への応用. (Thesis). Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10119/14253

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

宇井, 利昌. “Al2O3およびAlTiOの化合物半導体異種材料融合集積技術への応用.” 2017. Thesis, Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学. Accessed January 16, 2021. http://hdl.handle.net/10119/14253.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

宇井, 利昌. “Al2O3およびAlTiOの化合物半導体異種材料融合集積技術への応用.” 2017. Web. 16 Jan 2021.

Vancouver:

宇井 . Al2O3およびAlTiOの化合物半導体異種材料融合集積技術への応用. [Internet] [Thesis]. Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学; 2017. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10119/14253.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

宇井 . Al2O3およびAlTiOの化合物半導体異種材料融合集積技術への応用. [Thesis]. Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学; 2017. Available from: http://hdl.handle.net/10119/14253

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

29. WONG KAH LEONG. STUDY OF PROCESS IMPACT ON K VALUE OF LOW K DIELECTRIC MATERIAL USED IN CU / LOW K DUAL DAMASCENE INTERCONNECT.

Degree: 2003, National University of Singapore

Subjects/Keywords: Low k dielectric; CVD; CoralTM; Etching; Plasma treatment; Stripping; Ashing; Cleaning; Integrated k

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

LEONG, W. K. (2003). STUDY OF PROCESS IMPACT ON K VALUE OF LOW K DIELECTRIC MATERIAL USED IN CU / LOW K DUAL DAMASCENE INTERCONNECT. (Thesis). National University of Singapore. Retrieved from https://scholarbank.nus.edu.sg/handle/10635/154133

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

LEONG, WONG KAH. “STUDY OF PROCESS IMPACT ON K VALUE OF LOW K DIELECTRIC MATERIAL USED IN CU / LOW K DUAL DAMASCENE INTERCONNECT.” 2003. Thesis, National University of Singapore. Accessed January 16, 2021. https://scholarbank.nus.edu.sg/handle/10635/154133.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

LEONG, WONG KAH. “STUDY OF PROCESS IMPACT ON K VALUE OF LOW K DIELECTRIC MATERIAL USED IN CU / LOW K DUAL DAMASCENE INTERCONNECT.” 2003. Web. 16 Jan 2021.

Vancouver:

LEONG WK. STUDY OF PROCESS IMPACT ON K VALUE OF LOW K DIELECTRIC MATERIAL USED IN CU / LOW K DUAL DAMASCENE INTERCONNECT. [Internet] [Thesis]. National University of Singapore; 2003. [cited 2021 Jan 16]. Available from: https://scholarbank.nus.edu.sg/handle/10635/154133.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

LEONG WK. STUDY OF PROCESS IMPACT ON K VALUE OF LOW K DIELECTRIC MATERIAL USED IN CU / LOW K DUAL DAMASCENE INTERCONNECT. [Thesis]. National University of Singapore; 2003. Available from: https://scholarbank.nus.edu.sg/handle/10635/154133

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Louisiana State University

30. Jin, Yoonyoung. Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition.

Degree: PhD, Electrical and Computer Engineering, 2005, Louisiana State University

 Use of low relative dielectric constant (low-k) material as an interlayer dielectric is among important approaches to reduce the RC time delay in high performance… (more)

Subjects/Keywords: surface modification; sicf; silicon containing; fluorocarbon; pecvd; dielectrics; low-k; ultralow-k

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jin, Y. (2005). Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition. (Doctoral Dissertation). Louisiana State University. Retrieved from etd-05182005-120737 ; https://digitalcommons.lsu.edu/gradschool_dissertations/342

Chicago Manual of Style (16th Edition):

Jin, Yoonyoung. “Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition.” 2005. Doctoral Dissertation, Louisiana State University. Accessed January 16, 2021. etd-05182005-120737 ; https://digitalcommons.lsu.edu/gradschool_dissertations/342.

MLA Handbook (7th Edition):

Jin, Yoonyoung. “Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition.” 2005. Web. 16 Jan 2021.

Vancouver:

Jin Y. Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition. [Internet] [Doctoral dissertation]. Louisiana State University; 2005. [cited 2021 Jan 16]. Available from: etd-05182005-120737 ; https://digitalcommons.lsu.edu/gradschool_dissertations/342.

Council of Science Editors:

Jin Y. Low dielectric constant fluorocarbon films containing silicon by plasma enhanced chemical vapor deposition. [Doctoral Dissertation]. Louisiana State University; 2005. Available from: etd-05182005-120737 ; https://digitalcommons.lsu.edu/gradschool_dissertations/342

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