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You searched for subject:(LPCVD). Showing records 1 – 13 of 13 total matches.

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NSYSU

1. Pan, Li-sheng. Synthesis of CNT on graphene.

Degree: Master, Chemistry, 2016, NSYSU

 Based on Cu foil, using LPCVD method with different temperature, reaction time, and CH4/H2 ratio to synthesize single, double, or few layers graphene. Then using… (more)

Subjects/Keywords: G/CNT; LPCVD; graphene; CNT

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APA (6th Edition):

Pan, L. (2016). Synthesis of CNT on graphene. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709116-141919

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pan, Li-sheng. “Synthesis of CNT on graphene.” 2016. Thesis, NSYSU. Accessed February 21, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709116-141919.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pan, Li-sheng. “Synthesis of CNT on graphene.” 2016. Web. 21 Feb 2020.

Vancouver:

Pan L. Synthesis of CNT on graphene. [Internet] [Thesis]. NSYSU; 2016. [cited 2020 Feb 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709116-141919.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pan L. Synthesis of CNT on graphene. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709116-141919

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Lee, Cheng-yuan. Characterization of Silicon Nitride Films on n-GaN Prepared by Low-Pressure Chemical Vapor Deposition.

Degree: Master, Electrical Engineering, 2008, NSYSU

 In this study, the characteristics of low-pressure chemical vapor deposition deposited silicon nitride films on n-GaN substrate were investigated. The physical and chemical properties were… (more)

Subjects/Keywords: LPCVD; Silicon Nitride Oxide; n-GaN

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APA (6th Edition):

Lee, C. (2008). Characterization of Silicon Nitride Films on n-GaN Prepared by Low-Pressure Chemical Vapor Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804108-173141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Cheng-yuan. “Characterization of Silicon Nitride Films on n-GaN Prepared by Low-Pressure Chemical Vapor Deposition.” 2008. Thesis, NSYSU. Accessed February 21, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804108-173141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Cheng-yuan. “Characterization of Silicon Nitride Films on n-GaN Prepared by Low-Pressure Chemical Vapor Deposition.” 2008. Web. 21 Feb 2020.

Vancouver:

Lee C. Characterization of Silicon Nitride Films on n-GaN Prepared by Low-Pressure Chemical Vapor Deposition. [Internet] [Thesis]. NSYSU; 2008. [cited 2020 Feb 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804108-173141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee C. Characterization of Silicon Nitride Films on n-GaN Prepared by Low-Pressure Chemical Vapor Deposition. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804108-173141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


INP Toulouse

3. Zahi, Ilyes. Modélisation multi-échelles des mécanismes de nucléation/croissance lors de la synthèse de nanoplots de silicium par LPCVD pour les nouvelles générations de mémoires non volatiles : Multiscale modeling of nucleation and growth mechanisms during silicon nanodots LPCVD synthesis for new generation of non volatile memory.

Degree: Docteur es, Génie des Procédés et de l'Environnement, 2009, INP Toulouse

L'industrie de la microélectronique est en perpétuelle évolution, surtout concernant la diminution des dimensions des composants. Ainsi, pour les nouvelles générations de mémoires non volatiles… (more)

Subjects/Keywords: LPCVD; Nanoplots; Silicium; Modélisation multi-échelles; DFT; CFD; LPCVD; Nanodots; Silicon; Multiscale Modelling; DFT; CFD

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APA (6th Edition):

Zahi, I. (2009). Modélisation multi-échelles des mécanismes de nucléation/croissance lors de la synthèse de nanoplots de silicium par LPCVD pour les nouvelles générations de mémoires non volatiles : Multiscale modeling of nucleation and growth mechanisms during silicon nanodots LPCVD synthesis for new generation of non volatile memory. (Doctoral Dissertation). INP Toulouse. Retrieved from http://www.theses.fr/2009INPT017G

Chicago Manual of Style (16th Edition):

Zahi, Ilyes. “Modélisation multi-échelles des mécanismes de nucléation/croissance lors de la synthèse de nanoplots de silicium par LPCVD pour les nouvelles générations de mémoires non volatiles : Multiscale modeling of nucleation and growth mechanisms during silicon nanodots LPCVD synthesis for new generation of non volatile memory.” 2009. Doctoral Dissertation, INP Toulouse. Accessed February 21, 2020. http://www.theses.fr/2009INPT017G.

MLA Handbook (7th Edition):

Zahi, Ilyes. “Modélisation multi-échelles des mécanismes de nucléation/croissance lors de la synthèse de nanoplots de silicium par LPCVD pour les nouvelles générations de mémoires non volatiles : Multiscale modeling of nucleation and growth mechanisms during silicon nanodots LPCVD synthesis for new generation of non volatile memory.” 2009. Web. 21 Feb 2020.

Vancouver:

Zahi I. Modélisation multi-échelles des mécanismes de nucléation/croissance lors de la synthèse de nanoplots de silicium par LPCVD pour les nouvelles générations de mémoires non volatiles : Multiscale modeling of nucleation and growth mechanisms during silicon nanodots LPCVD synthesis for new generation of non volatile memory. [Internet] [Doctoral dissertation]. INP Toulouse; 2009. [cited 2020 Feb 21]. Available from: http://www.theses.fr/2009INPT017G.

Council of Science Editors:

Zahi I. Modélisation multi-échelles des mécanismes de nucléation/croissance lors de la synthèse de nanoplots de silicium par LPCVD pour les nouvelles générations de mémoires non volatiles : Multiscale modeling of nucleation and growth mechanisms during silicon nanodots LPCVD synthesis for new generation of non volatile memory. [Doctoral Dissertation]. INP Toulouse; 2009. Available from: http://www.theses.fr/2009INPT017G

4. Israel, Mahmoud. Croissance et caracterisation de nanofils de Si et Ge : Growth and characterization of Si and Ge nanowires.

Degree: Docteur es, Sciences des matériaux, 2015, Rennes 1

Nous nous sommes intéressés à la croissance et la caractérisation de nanofils de silicium (Si) et de germanium (Ge). Les nanofils ont été synthétisés par… (more)

Subjects/Keywords: Nanofils; Semi-Conducteur; VLS; LPCVD; Démouillage; Modèle de croissance; Résonance optique; Nanowires; Semiconductor; VLS; LPCVD; Dewetting; Growth model; Optical resonance

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APA (6th Edition):

Israel, M. (2015). Croissance et caracterisation de nanofils de Si et Ge : Growth and characterization of Si and Ge nanowires. (Doctoral Dissertation). Rennes 1. Retrieved from http://www.theses.fr/2015REN1S062

Chicago Manual of Style (16th Edition):

Israel, Mahmoud. “Croissance et caracterisation de nanofils de Si et Ge : Growth and characterization of Si and Ge nanowires.” 2015. Doctoral Dissertation, Rennes 1. Accessed February 21, 2020. http://www.theses.fr/2015REN1S062.

MLA Handbook (7th Edition):

Israel, Mahmoud. “Croissance et caracterisation de nanofils de Si et Ge : Growth and characterization of Si and Ge nanowires.” 2015. Web. 21 Feb 2020.

Vancouver:

Israel M. Croissance et caracterisation de nanofils de Si et Ge : Growth and characterization of Si and Ge nanowires. [Internet] [Doctoral dissertation]. Rennes 1; 2015. [cited 2020 Feb 21]. Available from: http://www.theses.fr/2015REN1S062.

Council of Science Editors:

Israel M. Croissance et caracterisation de nanofils de Si et Ge : Growth and characterization of Si and Ge nanowires. [Doctoral Dissertation]. Rennes 1; 2015. Available from: http://www.theses.fr/2015REN1S062


Université Paris-Sud – Paris XI

5. Martin de Nicolas, Silvia. a-Si : H/c-Si heterojunction solar cells : back side assessment and improvement : cellules solaires à hétérojonction a-Si : H/c-Si : évaluation et amélioration de la face arrière.

Degree: Docteur es, Physique, 2012, Université Paris-Sud – Paris XI

Parmi les technologies photovoltaïques à base de silicium, les cellules solaires à hétérojonction a-Si:H/c-Si (HJ) ont montré une attention croissante en ce qui concerne leur… (more)

Subjects/Keywords: Cellules solaires; Hétérojonction; Passivation; Silicium amorphe; Champ de surface arrière; ZnO:B; PECVD; LPCVD; Solar cells; Heterojunction; Passivation; Amorphous silicon; Back surface field; ZnO:B; PECVD; LPCVD

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APA (6th Edition):

Martin de Nicolas, S. (2012). a-Si : H/c-Si heterojunction solar cells : back side assessment and improvement : cellules solaires à hétérojonction a-Si : H/c-Si : évaluation et amélioration de la face arrière. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2012PA112253

Chicago Manual of Style (16th Edition):

Martin de Nicolas, Silvia. “a-Si : H/c-Si heterojunction solar cells : back side assessment and improvement : cellules solaires à hétérojonction a-Si : H/c-Si : évaluation et amélioration de la face arrière.” 2012. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed February 21, 2020. http://www.theses.fr/2012PA112253.

MLA Handbook (7th Edition):

Martin de Nicolas, Silvia. “a-Si : H/c-Si heterojunction solar cells : back side assessment and improvement : cellules solaires à hétérojonction a-Si : H/c-Si : évaluation et amélioration de la face arrière.” 2012. Web. 21 Feb 2020.

Vancouver:

Martin de Nicolas S. a-Si : H/c-Si heterojunction solar cells : back side assessment and improvement : cellules solaires à hétérojonction a-Si : H/c-Si : évaluation et amélioration de la face arrière. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2012. [cited 2020 Feb 21]. Available from: http://www.theses.fr/2012PA112253.

Council of Science Editors:

Martin de Nicolas S. a-Si : H/c-Si heterojunction solar cells : back side assessment and improvement : cellules solaires à hétérojonction a-Si : H/c-Si : évaluation et amélioration de la face arrière. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2012. Available from: http://www.theses.fr/2012PA112253


Cornell University

6. Heinselman, Karen. Hot-Wall Low Pressure Chemical Vapor Deposition Growth And Characterization Of Gan And Epitaxial Aln On Si (111) .

Degree: 2016, Cornell University

Subjects/Keywords: hot-wall LPCVD; aluminum nitride; epitaxy

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APA (6th Edition):

Heinselman, K. (2016). Hot-Wall Low Pressure Chemical Vapor Deposition Growth And Characterization Of Gan And Epitaxial Aln On Si (111) . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/45250

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Heinselman, Karen. “Hot-Wall Low Pressure Chemical Vapor Deposition Growth And Characterization Of Gan And Epitaxial Aln On Si (111) .” 2016. Thesis, Cornell University. Accessed February 21, 2020. http://hdl.handle.net/1813/45250.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Heinselman, Karen. “Hot-Wall Low Pressure Chemical Vapor Deposition Growth And Characterization Of Gan And Epitaxial Aln On Si (111) .” 2016. Web. 21 Feb 2020.

Vancouver:

Heinselman K. Hot-Wall Low Pressure Chemical Vapor Deposition Growth And Characterization Of Gan And Epitaxial Aln On Si (111) . [Internet] [Thesis]. Cornell University; 2016. [cited 2020 Feb 21]. Available from: http://hdl.handle.net/1813/45250.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Heinselman K. Hot-Wall Low Pressure Chemical Vapor Deposition Growth And Characterization Of Gan And Epitaxial Aln On Si (111) . [Thesis]. Cornell University; 2016. Available from: http://hdl.handle.net/1813/45250

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Cincinnati

7. Chen, Lin. SiC Thin-Films on Insulating Substrates for Robust MEMS-Applications.

Degree: PhD, Engineering : Electrical Engineering, 2003, University of Cincinnati

 MEMS applications require that large area of uniform SiC films is formed on insulating substrates or sacrificial layers. For electrically controlled MEMS devices, <i>in-situ</i> N2-doped… (more)

Subjects/Keywords: SiC on insulating substrate; LPCVD; ICP etching; MEMS; Fabry-Perot Interferometer

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APA (6th Edition):

Chen, L. (2003). SiC Thin-Films on Insulating Substrates for Robust MEMS-Applications. (Doctoral Dissertation). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1053095076

Chicago Manual of Style (16th Edition):

Chen, Lin. “SiC Thin-Films on Insulating Substrates for Robust MEMS-Applications.” 2003. Doctoral Dissertation, University of Cincinnati. Accessed February 21, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1053095076.

MLA Handbook (7th Edition):

Chen, Lin. “SiC Thin-Films on Insulating Substrates for Robust MEMS-Applications.” 2003. Web. 21 Feb 2020.

Vancouver:

Chen L. SiC Thin-Films on Insulating Substrates for Robust MEMS-Applications. [Internet] [Doctoral dissertation]. University of Cincinnati; 2003. [cited 2020 Feb 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1053095076.

Council of Science Editors:

Chen L. SiC Thin-Films on Insulating Substrates for Robust MEMS-Applications. [Doctoral Dissertation]. University of Cincinnati; 2003. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1053095076


New Jersey Institute of Technology

8. Tungare, Mihir. Nanoporous SiO2/vycor membranes for air separation.

Degree: MSin Materials Science and Engineering - (M.S.), Committee for the Interdisciplinary Program in Materials Science and Engineering, 2000, New Jersey Institute of Technology

  Porous Vycor tubes with 40Å initial pore diameter were modified using low pressure chemical vapor deposition (LPCVD) of silicon dioxide N02). Diethylsilane (DES) in… (more)

Subjects/Keywords: Vycor tubes; low pressure; chemical vapor deposition (LPCVD); Materials Science and Engineering

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APA (6th Edition):

Tungare, M. (2000). Nanoporous SiO2/vycor membranes for air separation. (Thesis). New Jersey Institute of Technology. Retrieved from https://digitalcommons.njit.edu/theses/766

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tungare, Mihir. “Nanoporous SiO2/vycor membranes for air separation.” 2000. Thesis, New Jersey Institute of Technology. Accessed February 21, 2020. https://digitalcommons.njit.edu/theses/766.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tungare, Mihir. “Nanoporous SiO2/vycor membranes for air separation.” 2000. Web. 21 Feb 2020.

Vancouver:

Tungare M. Nanoporous SiO2/vycor membranes for air separation. [Internet] [Thesis]. New Jersey Institute of Technology; 2000. [cited 2020 Feb 21]. Available from: https://digitalcommons.njit.edu/theses/766.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tungare M. Nanoporous SiO2/vycor membranes for air separation. [Thesis]. New Jersey Institute of Technology; 2000. Available from: https://digitalcommons.njit.edu/theses/766

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

9. Σαλωνίδου, Αθηνά. Νανοκρυσταλλικό πυρίτιο για εφαρμογές σε νανοηλεκτρονικές διατάξεις μνήμης.

Degree: 2006, National and Kapodistrian University of Athens; Εθνικό και Καποδιστριακό Πανεπιστήμιο Αθηνών (ΕΚΠΑ)

Subjects/Keywords: Μνήμες νανοκρυσταλλιτών πυριτίου; Μη πτητικές μνήμες; Φόρτιση νανοκρυσταλλιτών; Silicon nanocrystal memories; LPCVD; Non volatile memories; Charging

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APA (6th Edition):

Σαλωνίδου, . . (2006). Νανοκρυσταλλικό πυρίτιο για εφαρμογές σε νανοηλεκτρονικές διατάξεις μνήμης. (Thesis). National and Kapodistrian University of Athens; Εθνικό και Καποδιστριακό Πανεπιστήμιο Αθηνών (ΕΚΠΑ). Retrieved from http://hdl.handle.net/10442/hedi/20108

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Σαλωνίδου, Αθηνά. “Νανοκρυσταλλικό πυρίτιο για εφαρμογές σε νανοηλεκτρονικές διατάξεις μνήμης.” 2006. Thesis, National and Kapodistrian University of Athens; Εθνικό και Καποδιστριακό Πανεπιστήμιο Αθηνών (ΕΚΠΑ). Accessed February 21, 2020. http://hdl.handle.net/10442/hedi/20108.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Σαλωνίδου, Αθηνά. “Νανοκρυσταλλικό πυρίτιο για εφαρμογές σε νανοηλεκτρονικές διατάξεις μνήμης.” 2006. Web. 21 Feb 2020.

Vancouver:

Σαλωνίδου . Νανοκρυσταλλικό πυρίτιο για εφαρμογές σε νανοηλεκτρονικές διατάξεις μνήμης. [Internet] [Thesis]. National and Kapodistrian University of Athens; Εθνικό και Καποδιστριακό Πανεπιστήμιο Αθηνών (ΕΚΠΑ); 2006. [cited 2020 Feb 21]. Available from: http://hdl.handle.net/10442/hedi/20108.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Σαλωνίδου . Νανοκρυσταλλικό πυρίτιο για εφαρμογές σε νανοηλεκτρονικές διατάξεις μνήμης. [Thesis]. National and Kapodistrian University of Athens; Εθνικό και Καποδιστριακό Πανεπιστήμιο Αθηνών (ΕΚΠΑ); 2006. Available from: http://hdl.handle.net/10442/hedi/20108

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Delft University of Technology

10. Morana, B. Silicon carbide thin films for MEMS nanoreactors for in-situ transmission electron microscopy.

Degree: 2015, Delft University of Technology

Subjects/Keywords: silicon carbide; LPCVD; characterization; nanoreactor; electron transparent windows; microchannel; microhotplate; microheater; MEMS; TEM; ETEM; in-situ; operando

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APA (6th Edition):

Morana, B. (2015). Silicon carbide thin films for MEMS nanoreactors for in-situ transmission electron microscopy. (Doctoral Dissertation). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b ; urn:NBN:nl:ui:24-uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b ; urn:NBN:nl:ui:24-uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b ; http://resolver.tudelft.nl/uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b

Chicago Manual of Style (16th Edition):

Morana, B. “Silicon carbide thin films for MEMS nanoreactors for in-situ transmission electron microscopy.” 2015. Doctoral Dissertation, Delft University of Technology. Accessed February 21, 2020. http://resolver.tudelft.nl/uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b ; urn:NBN:nl:ui:24-uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b ; urn:NBN:nl:ui:24-uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b ; http://resolver.tudelft.nl/uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b.

MLA Handbook (7th Edition):

Morana, B. “Silicon carbide thin films for MEMS nanoreactors for in-situ transmission electron microscopy.” 2015. Web. 21 Feb 2020.

Vancouver:

Morana B. Silicon carbide thin films for MEMS nanoreactors for in-situ transmission electron microscopy. [Internet] [Doctoral dissertation]. Delft University of Technology; 2015. [cited 2020 Feb 21]. Available from: http://resolver.tudelft.nl/uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b ; urn:NBN:nl:ui:24-uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b ; urn:NBN:nl:ui:24-uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b ; http://resolver.tudelft.nl/uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b.

Council of Science Editors:

Morana B. Silicon carbide thin films for MEMS nanoreactors for in-situ transmission electron microscopy. [Doctoral Dissertation]. Delft University of Technology; 2015. Available from: http://resolver.tudelft.nl/uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b ; urn:NBN:nl:ui:24-uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b ; urn:NBN:nl:ui:24-uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b ; http://resolver.tudelft.nl/uuid:40e7a0ce-3e48-40d4-9ffe-93e1fce3fc7b

11. Banerjee, S. Super-growth of CNTs based on ZrN for TSV application:.

Degree: 2014, Delft University of Technology

 This thesis has explored the possibility of using carbon nanotubes (CNT) as a novel material for through-silicon vias (TSV) in 3D-integrated circuits. With the steady… (more)

Subjects/Keywords: Carbon nanotubes; Through-silicon vias; LPCVD; Design of experiments: Taguchi; Catalyst loading effect; CNT resistivity

…process as thermally-assisted LPCVD. From here on, our discussions will be based on this kind of… …been done by AIXTRON BlackMagic Pro, a LPCVD reactor. Being a commercial reactor, it had some… …during the initial stages of the thesis, offered CNT growth at standard LPCVD conditions at 650… …LPCVD growth recipe (Nominal) at 650 OC. 1.3 Prior research activities and… 

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APA (6th Edition):

Banerjee, S. (2014). Super-growth of CNTs based on ZrN for TSV application:. (Masters Thesis). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:1fa0028e-80c5-447d-b28e-6cd77730f133

Chicago Manual of Style (16th Edition):

Banerjee, S. “Super-growth of CNTs based on ZrN for TSV application:.” 2014. Masters Thesis, Delft University of Technology. Accessed February 21, 2020. http://resolver.tudelft.nl/uuid:1fa0028e-80c5-447d-b28e-6cd77730f133.

MLA Handbook (7th Edition):

Banerjee, S. “Super-growth of CNTs based on ZrN for TSV application:.” 2014. Web. 21 Feb 2020.

Vancouver:

Banerjee S. Super-growth of CNTs based on ZrN for TSV application:. [Internet] [Masters thesis]. Delft University of Technology; 2014. [cited 2020 Feb 21]. Available from: http://resolver.tudelft.nl/uuid:1fa0028e-80c5-447d-b28e-6cd77730f133.

Council of Science Editors:

Banerjee S. Super-growth of CNTs based on ZrN for TSV application:. [Masters Thesis]. Delft University of Technology; 2014. Available from: http://resolver.tudelft.nl/uuid:1fa0028e-80c5-447d-b28e-6cd77730f133

12. AN TAO. The Effects of Process Parameters on Electrical Properties of Phosphorus Implanted Polysilicon Deposited by LPCVD.

Degree: 2008, National University of Singapore

Subjects/Keywords: electrical properties; polysilicon; LPCVD; phosphorus implanted; process parameters; sheet resistance; temperature; pressure; mass flow rate; uniformity

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

TAO, A. (2008). The Effects of Process Parameters on Electrical Properties of Phosphorus Implanted Polysilicon Deposited by LPCVD. (Thesis). National University of Singapore. Retrieved from https://scholarbank.nus.edu.sg/handle/10635/153883

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

TAO, AN. “The Effects of Process Parameters on Electrical Properties of Phosphorus Implanted Polysilicon Deposited by LPCVD.” 2008. Thesis, National University of Singapore. Accessed February 21, 2020. https://scholarbank.nus.edu.sg/handle/10635/153883.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

TAO, AN. “The Effects of Process Parameters on Electrical Properties of Phosphorus Implanted Polysilicon Deposited by LPCVD.” 2008. Web. 21 Feb 2020.

Vancouver:

TAO A. The Effects of Process Parameters on Electrical Properties of Phosphorus Implanted Polysilicon Deposited by LPCVD. [Internet] [Thesis]. National University of Singapore; 2008. [cited 2020 Feb 21]. Available from: https://scholarbank.nus.edu.sg/handle/10635/153883.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

TAO A. The Effects of Process Parameters on Electrical Properties of Phosphorus Implanted Polysilicon Deposited by LPCVD. [Thesis]. National University of Singapore; 2008. Available from: https://scholarbank.nus.edu.sg/handle/10635/153883

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Australian National University

13. McCann, Michelle Jane. Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride .

Degree: 2002, Australian National University

 This thesis discusses the growth of thin-film silicon layers suitable for solar cells using liquid phase epitaxy and the behaviour of oxide LPCVD silicon nitride… (more)

Subjects/Keywords: Thin film silicon layers; solar cells; liquid phase epitaxy; LPCVD; low pressure chemical vapour deposition; high temperature; oxide nitride stacks; silicon nitride

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

McCann, M. J. (2002). Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/47800

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

McCann, Michelle Jane. “Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride .” 2002. Thesis, Australian National University. Accessed February 21, 2020. http://hdl.handle.net/1885/47800.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

McCann, Michelle Jane. “Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride .” 2002. Web. 21 Feb 2020.

Vancouver:

McCann MJ. Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride . [Internet] [Thesis]. Australian National University; 2002. [cited 2020 Feb 21]. Available from: http://hdl.handle.net/1885/47800.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

McCann MJ. Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride . [Thesis]. Australian National University; 2002. Available from: http://hdl.handle.net/1885/47800

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.