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You searched for subject:(Internal quantum efficiency). Showing records 1 – 12 of 12 total matches.

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NSYSU

1. Chen, Jian-yu. Optical properties of InGaN/GaN single-quantum-well microdisks.

Degree: Master, Physics, 2014, NSYSU

 We use a Ti:sapphire femtosecond laser and a Time Correlated Single Photon Counting (TCSPC) system to study optical properties and carrier relaxation of InGaN grown… (more)

Subjects/Keywords: lifetime; Internal Quantum; Efficiency; time-resolved photoluminescence; InGaN; microdisk; photoluminescence

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, J. (2014). Optical properties of InGaN/GaN single-quantum-well microdisks. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810114-160026

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Jian-yu. “Optical properties of InGaN/GaN single-quantum-well microdisks.” 2014. Thesis, NSYSU. Accessed November 13, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810114-160026.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Jian-yu. “Optical properties of InGaN/GaN single-quantum-well microdisks.” 2014. Web. 13 Nov 2019.

Vancouver:

Chen J. Optical properties of InGaN/GaN single-quantum-well microdisks. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Nov 13]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810114-160026.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen J. Optical properties of InGaN/GaN single-quantum-well microdisks. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0810114-160026

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Wang, Chia-Hsiang. Carrier Relaxation of InAs/GaAs Quantum Dots.

Degree: Master, Physics, 2017, NSYSU

 The aim of this study is to examine the energy released due to excitation and recombination of InAs/GaAs quantum dots sample at difference condiditons ,… (more)

Subjects/Keywords: Time-resolved pump-probe; lifetime; Photoluminescence; quantum dots; Internal Quantum Efficiency; InAs; GaAs

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APA (6th Edition):

Wang, C. (2017). Carrier Relaxation of InAs/GaAs Quantum Dots. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812117-151516

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Chia-Hsiang. “Carrier Relaxation of InAs/GaAs Quantum Dots.” 2017. Thesis, NSYSU. Accessed November 13, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812117-151516.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Chia-Hsiang. “Carrier Relaxation of InAs/GaAs Quantum Dots.” 2017. Web. 13 Nov 2019.

Vancouver:

Wang C. Carrier Relaxation of InAs/GaAs Quantum Dots. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Nov 13]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812117-151516.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang C. Carrier Relaxation of InAs/GaAs Quantum Dots. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0812117-151516

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. Blenkhorn, William Eric. Optical studies of polar InGaN/GaN quantum well structures.

Degree: PhD, 2016, University of Manchester

 In this thesis, I will present and discuss research performed on InGaN/GaN multiple quantum well (QW) structures. The results of which were taken using photoluminescence… (more)

Subjects/Keywords: 537.6; InGaN/GaN quantum wells; Carrier localisation; Internal quantum efficiency; Gross well width fluctuations; Quantum well growth methodology

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APA (6th Edition):

Blenkhorn, W. E. (2016). Optical studies of polar InGaN/GaN quantum well structures. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/optical-studies-of-polar-ingangan-quantum-well-structures(7f610cae-ba98-44d8-ae54-dbc4c44725d4).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.684829

Chicago Manual of Style (16th Edition):

Blenkhorn, William Eric. “Optical studies of polar InGaN/GaN quantum well structures.” 2016. Doctoral Dissertation, University of Manchester. Accessed November 13, 2019. https://www.research.manchester.ac.uk/portal/en/theses/optical-studies-of-polar-ingangan-quantum-well-structures(7f610cae-ba98-44d8-ae54-dbc4c44725d4).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.684829.

MLA Handbook (7th Edition):

Blenkhorn, William Eric. “Optical studies of polar InGaN/GaN quantum well structures.” 2016. Web. 13 Nov 2019.

Vancouver:

Blenkhorn WE. Optical studies of polar InGaN/GaN quantum well structures. [Internet] [Doctoral dissertation]. University of Manchester; 2016. [cited 2019 Nov 13]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/optical-studies-of-polar-ingangan-quantum-well-structures(7f610cae-ba98-44d8-ae54-dbc4c44725d4).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.684829.

Council of Science Editors:

Blenkhorn WE. Optical studies of polar InGaN/GaN quantum well structures. [Doctoral Dissertation]. University of Manchester; 2016. Available from: https://www.research.manchester.ac.uk/portal/en/theses/optical-studies-of-polar-ingangan-quantum-well-structures(7f610cae-ba98-44d8-ae54-dbc4c44725d4).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.684829


University of Manchester

4. Blenkhorn, William Eric. Optical Studies of Polar InGaN/GaN Quantum Well Structures.

Degree: 2016, University of Manchester

 The work in this thesis was submitted to The University of Manchester for the degree of Doctor of Philosophy in April 2016 by William Eric… (more)

Subjects/Keywords: InGaN/GaN quantum wells; Carrier localisation; Internal quantum efficiency; Gross well width fluctuations; Quantum well growth methodology

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Blenkhorn, W. E. (2016). Optical Studies of Polar InGaN/GaN Quantum Well Structures. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:299945

Chicago Manual of Style (16th Edition):

Blenkhorn, William Eric. “Optical Studies of Polar InGaN/GaN Quantum Well Structures.” 2016. Doctoral Dissertation, University of Manchester. Accessed November 13, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:299945.

MLA Handbook (7th Edition):

Blenkhorn, William Eric. “Optical Studies of Polar InGaN/GaN Quantum Well Structures.” 2016. Web. 13 Nov 2019.

Vancouver:

Blenkhorn WE. Optical Studies of Polar InGaN/GaN Quantum Well Structures. [Internet] [Doctoral dissertation]. University of Manchester; 2016. [cited 2019 Nov 13]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:299945.

Council of Science Editors:

Blenkhorn WE. Optical Studies of Polar InGaN/GaN Quantum Well Structures. [Doctoral Dissertation]. University of Manchester; 2016. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:299945


NSYSU

5. Huang, Chi-chan. Optical properties of InGaN/GaN Multi-quantum well.

Degree: Master, Physics, 2016, NSYSU

 We use a Ti: sapphire femtosecond laser and a Time Correlated Single Photon Counting (TCSPC) system to study optical properties of InGaN multi-quantum well on… (more)

Subjects/Keywords: Photoluminescence; Localized state; Internal quantum efficiency; InGaN; Time-resolved photoluminescence; Carrier lifetime

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Huang, C. (2016). Optical properties of InGaN/GaN Multi-quantum well. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0806116-224402

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Chi-chan. “Optical properties of InGaN/GaN Multi-quantum well.” 2016. Thesis, NSYSU. Accessed November 13, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0806116-224402.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Chi-chan. “Optical properties of InGaN/GaN Multi-quantum well.” 2016. Web. 13 Nov 2019.

Vancouver:

Huang C. Optical properties of InGaN/GaN Multi-quantum well. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Nov 13]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0806116-224402.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang C. Optical properties of InGaN/GaN Multi-quantum well. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0806116-224402

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

6. Matta, Samuel. AlGaN quantum dots grown by molecular beam epitaxy for ultraviolet light emitting diodes : Boîtes quantiques AlGaN par épitaxie par jets moléculaires pour diodes électroluminescentes ultraviolettes.

Degree: Docteur es, Physique, 2018, Montpellier

 Ce travail porte sur la croissance par épitaxie sous jets moléculaires (EJM) et sur les propriétés structurales et optiques de boîtes quantiques (BQs) AlyGa1-yN insérées… (more)

Subjects/Keywords: Boîtes quantiques; AlGaN; Epitaxie par jet moléculaire; Nitrures d’éléments III; Quantum dot; AlGaN; Internal quantum efficiency; Molecular Beam Epitaxy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Matta, S. (2018). AlGaN quantum dots grown by molecular beam epitaxy for ultraviolet light emitting diodes : Boîtes quantiques AlGaN par épitaxie par jets moléculaires pour diodes électroluminescentes ultraviolettes. (Doctoral Dissertation). Montpellier. Retrieved from http://www.theses.fr/2018MONTS042

Chicago Manual of Style (16th Edition):

Matta, Samuel. “AlGaN quantum dots grown by molecular beam epitaxy for ultraviolet light emitting diodes : Boîtes quantiques AlGaN par épitaxie par jets moléculaires pour diodes électroluminescentes ultraviolettes.” 2018. Doctoral Dissertation, Montpellier. Accessed November 13, 2019. http://www.theses.fr/2018MONTS042.

MLA Handbook (7th Edition):

Matta, Samuel. “AlGaN quantum dots grown by molecular beam epitaxy for ultraviolet light emitting diodes : Boîtes quantiques AlGaN par épitaxie par jets moléculaires pour diodes électroluminescentes ultraviolettes.” 2018. Web. 13 Nov 2019.

Vancouver:

Matta S. AlGaN quantum dots grown by molecular beam epitaxy for ultraviolet light emitting diodes : Boîtes quantiques AlGaN par épitaxie par jets moléculaires pour diodes électroluminescentes ultraviolettes. [Internet] [Doctoral dissertation]. Montpellier; 2018. [cited 2019 Nov 13]. Available from: http://www.theses.fr/2018MONTS042.

Council of Science Editors:

Matta S. AlGaN quantum dots grown by molecular beam epitaxy for ultraviolet light emitting diodes : Boîtes quantiques AlGaN par épitaxie par jets moléculaires pour diodes électroluminescentes ultraviolettes. [Doctoral Dissertation]. Montpellier; 2018. Available from: http://www.theses.fr/2018MONTS042


NSYSU

7. Chen, Hsin-Yu. Study of Thermal Activated Delayed Fluorescences doped in Polymer Phosphorescent Light-Emitting Diodes.

Degree: Master, Electro-Optical Engineering, 2015, NSYSU

 In the past years Organic Light-Emitting Diodes could have great breakthrough, the researches and improvements of Iridium(III) complexes or rare-metal complexes were in the important… (more)

Subjects/Keywords: reverse intersystem crossing; Internal Quantum Efficiency; Delayed Fluorescence; Thermal Activated Delayed Fluorescence; Polymer Phosphorescent Light-Emitting Diodes

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APA (6th Edition):

Chen, H. (2015). Study of Thermal Activated Delayed Fluorescences doped in Polymer Phosphorescent Light-Emitting Diodes. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-112340

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Hsin-Yu. “Study of Thermal Activated Delayed Fluorescences doped in Polymer Phosphorescent Light-Emitting Diodes.” 2015. Thesis, NSYSU. Accessed November 13, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-112340.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Hsin-Yu. “Study of Thermal Activated Delayed Fluorescences doped in Polymer Phosphorescent Light-Emitting Diodes.” 2015. Web. 13 Nov 2019.

Vancouver:

Chen H. Study of Thermal Activated Delayed Fluorescences doped in Polymer Phosphorescent Light-Emitting Diodes. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Nov 13]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-112340.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen H. Study of Thermal Activated Delayed Fluorescences doped in Polymer Phosphorescent Light-Emitting Diodes. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-112340

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

8. Eom, Sang. High Efficiency Blue and White Phosphorescent Organic Light Emitting Devices.

Degree: PhD, Materials Science and Engineering, 2010, University of Florida

 Organic light-emitting devices (OLEDs) have important applications in full-color flat-panel displays and as solid-state lighting sources. Achieving high efficiency deep-blue phosphorescent OLEDs (PHOLEDs) is necessary… (more)

Subjects/Keywords: Current density; Doping; Electric potential; Electrons; Excitons; Lighting; Luminance; Molecules; Power efficiency; Quantum efficiency; array, blue, contact, device, diode, display, efficiency, emitting, external, extraction, fluorescent, hemispherical, high, internal, light, lighting, lithography, luminance, microlens, oled, organic, outcoupling, pdms, phosphorescent, polystyrene, power, quantum, soft, white

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Eom, S. (2010). High Efficiency Blue and White Phosphorescent Organic Light Emitting Devices. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0042393

Chicago Manual of Style (16th Edition):

Eom, Sang. “High Efficiency Blue and White Phosphorescent Organic Light Emitting Devices.” 2010. Doctoral Dissertation, University of Florida. Accessed November 13, 2019. http://ufdc.ufl.edu/UFE0042393.

MLA Handbook (7th Edition):

Eom, Sang. “High Efficiency Blue and White Phosphorescent Organic Light Emitting Devices.” 2010. Web. 13 Nov 2019.

Vancouver:

Eom S. High Efficiency Blue and White Phosphorescent Organic Light Emitting Devices. [Internet] [Doctoral dissertation]. University of Florida; 2010. [cited 2019 Nov 13]. Available from: http://ufdc.ufl.edu/UFE0042393.

Council of Science Editors:

Eom S. High Efficiency Blue and White Phosphorescent Organic Light Emitting Devices. [Doctoral Dissertation]. University of Florida; 2010. Available from: http://ufdc.ufl.edu/UFE0042393


Virginia Commonwealth University

9. Ni, Xianfeng. Growth and characterization of non-polar GaN materials and investigation of efficiency droop in InGaN light emitting diodes.

Degree: PhD, Electrical Engineering, 2010, Virginia Commonwealth University

 General lighting with InGaN light emitting diodes (LEDs) as light sources is of particular interest in terms of energy savings and related environmental benefits due… (more)

Subjects/Keywords: GaN; InGaN; light emitting diodes; efficiency; electroluminescence; electron overflow; non-polar; MOCVD; photoluminescence; m-plane; a-plane; c-plane; carrier spillover; efficiency droop; epitaxial growth; lateral overgrowth; LEDs; current crowding; internal quantum efficiency; external quantum efficiency; Hot electron; silicon; distributed Bragg reflectors; nitrides; xrd; sem; electron blocking layer; junction heating; semi-polar; nonpolar; Auger; recombination; Electrical and Computer Engineering; Engineering

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APA (6th Edition):

Ni, X. (2010). Growth and characterization of non-polar GaN materials and investigation of efficiency droop in InGaN light emitting diodes. (Doctoral Dissertation). Virginia Commonwealth University. Retrieved from https://scholarscompass.vcu.edu/etd/2235

Chicago Manual of Style (16th Edition):

Ni, Xianfeng. “Growth and characterization of non-polar GaN materials and investigation of efficiency droop in InGaN light emitting diodes.” 2010. Doctoral Dissertation, Virginia Commonwealth University. Accessed November 13, 2019. https://scholarscompass.vcu.edu/etd/2235.

MLA Handbook (7th Edition):

Ni, Xianfeng. “Growth and characterization of non-polar GaN materials and investigation of efficiency droop in InGaN light emitting diodes.” 2010. Web. 13 Nov 2019.

Vancouver:

Ni X. Growth and characterization of non-polar GaN materials and investigation of efficiency droop in InGaN light emitting diodes. [Internet] [Doctoral dissertation]. Virginia Commonwealth University; 2010. [cited 2019 Nov 13]. Available from: https://scholarscompass.vcu.edu/etd/2235.

Council of Science Editors:

Ni X. Growth and characterization of non-polar GaN materials and investigation of efficiency droop in InGaN light emitting diodes. [Doctoral Dissertation]. Virginia Commonwealth University; 2010. Available from: https://scholarscompass.vcu.edu/etd/2235


University of Manchester

10. Davies, Matthew John. Optical studies of InGaN/GaN quantum well structures.

Degree: PhD, 2014, University of Manchester

 In this thesis I present and discuss the results of optical spectroscopy performed on InGaN/GaN single and multiple quantum well (QW) structures. I report on… (more)

Subjects/Keywords: 537.6; InGaN; GaN; Quantum Wells; Semiconductors; Time resolved photoluminescence; Photoluminescence; Recombination dynamics; Efficiency droop; Threading dislocations; Underlayer; Prelayer; Photoluminescence excitation; Carrier localisation; Internal quantum efficiency; Gallium nitride; Indium gallium nitride; Crystal defects; Piezoelectric field screening

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Davies, M. J. (2014). Optical studies of InGaN/GaN quantum well structures. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/optical-studies-of-ingangan-quantum-well-structures(f6c6e59b-8366-44aa-b149-9338d3f03dc0).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.603270

Chicago Manual of Style (16th Edition):

Davies, Matthew John. “Optical studies of InGaN/GaN quantum well structures.” 2014. Doctoral Dissertation, University of Manchester. Accessed November 13, 2019. https://www.research.manchester.ac.uk/portal/en/theses/optical-studies-of-ingangan-quantum-well-structures(f6c6e59b-8366-44aa-b149-9338d3f03dc0).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.603270.

MLA Handbook (7th Edition):

Davies, Matthew John. “Optical studies of InGaN/GaN quantum well structures.” 2014. Web. 13 Nov 2019.

Vancouver:

Davies MJ. Optical studies of InGaN/GaN quantum well structures. [Internet] [Doctoral dissertation]. University of Manchester; 2014. [cited 2019 Nov 13]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/optical-studies-of-ingangan-quantum-well-structures(f6c6e59b-8366-44aa-b149-9338d3f03dc0).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.603270.

Council of Science Editors:

Davies MJ. Optical studies of InGaN/GaN quantum well structures. [Doctoral Dissertation]. University of Manchester; 2014. Available from: https://www.research.manchester.ac.uk/portal/en/theses/optical-studies-of-ingangan-quantum-well-structures(f6c6e59b-8366-44aa-b149-9338d3f03dc0).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.603270


University of Manchester

11. Davies, Matthew John. Optical Studies of InGaN/GaN Quantum Well Structures.

Degree: 2014, University of Manchester

 In this thesis I present and discuss the results of optical spectroscopy performed on InGaN/GaN single and multiple quantum well (QW) structures. I report on… (more)

Subjects/Keywords: InGaN; GaN; Quantum Wells; Semiconductors; Time resolved photoluminescence; Photoluminescence; Recombination dynamics; Efficiency droop; Threading dislocations; Underlayer; Prelayer; Photoluminescence excitation; Carrier localisation; Internal quantum efficiency; Gallium nitride; Indium gallium nitride; Crystal defects; Piezoelectric field screening

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Davies, M. J. (2014). Optical Studies of InGaN/GaN Quantum Well Structures. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:221391

Chicago Manual of Style (16th Edition):

Davies, Matthew John. “Optical Studies of InGaN/GaN Quantum Well Structures.” 2014. Doctoral Dissertation, University of Manchester. Accessed November 13, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:221391.

MLA Handbook (7th Edition):

Davies, Matthew John. “Optical Studies of InGaN/GaN Quantum Well Structures.” 2014. Web. 13 Nov 2019.

Vancouver:

Davies MJ. Optical Studies of InGaN/GaN Quantum Well Structures. [Internet] [Doctoral dissertation]. University of Manchester; 2014. [cited 2019 Nov 13]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:221391.

Council of Science Editors:

Davies MJ. Optical Studies of InGaN/GaN Quantum Well Structures. [Doctoral Dissertation]. University of Manchester; 2014. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:221391


Georgia State University

12. Rinzan, Mohamed Buhary. Threshold Extension of Gallium Arsenide/Aluminum Gallium Arsenide Terahertz Detectors and Switching in Heterostructures.

Degree: PhD, Physics and Astronomy, 2006, Georgia State University

 In this work, homojunction interfacial workfunction internal photoemission (HIWIP) detectors based on GaAs, and heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors based mainly on the… (more)

Subjects/Keywords: Terahertz detectors; Homojunction; Heterojunction; Free carrier absorption; Reststrahlen band; Interfacial workfunction; Internal photoemission; Infrared detectors; Emitters; Barriers; Dark current; Photo current; Resonance cavity architecture; Responsivity; Quantum Efficiency; Detectivity; BLIP temperature; Threshold wavelength; Negative differential resistance; Tunneling; Switching; Astrophysics and Astronomy; Physics

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APA (6th Edition):

Rinzan, M. B. (2006). Threshold Extension of Gallium Arsenide/Aluminum Gallium Arsenide Terahertz Detectors and Switching in Heterostructures. (Doctoral Dissertation). Georgia State University. Retrieved from https://scholarworks.gsu.edu/phy_astr_diss/10

Chicago Manual of Style (16th Edition):

Rinzan, Mohamed Buhary. “Threshold Extension of Gallium Arsenide/Aluminum Gallium Arsenide Terahertz Detectors and Switching in Heterostructures.” 2006. Doctoral Dissertation, Georgia State University. Accessed November 13, 2019. https://scholarworks.gsu.edu/phy_astr_diss/10.

MLA Handbook (7th Edition):

Rinzan, Mohamed Buhary. “Threshold Extension of Gallium Arsenide/Aluminum Gallium Arsenide Terahertz Detectors and Switching in Heterostructures.” 2006. Web. 13 Nov 2019.

Vancouver:

Rinzan MB. Threshold Extension of Gallium Arsenide/Aluminum Gallium Arsenide Terahertz Detectors and Switching in Heterostructures. [Internet] [Doctoral dissertation]. Georgia State University; 2006. [cited 2019 Nov 13]. Available from: https://scholarworks.gsu.edu/phy_astr_diss/10.

Council of Science Editors:

Rinzan MB. Threshold Extension of Gallium Arsenide/Aluminum Gallium Arsenide Terahertz Detectors and Switching in Heterostructures. [Doctoral Dissertation]. Georgia State University; 2006. Available from: https://scholarworks.gsu.edu/phy_astr_diss/10

.