Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for subject:(Indium zinc oxide). Showing records 1 – 30 of 42 total matches.

[1] [2]

Search Limiters

Last 2 Years | English Only

▼ Search Limiters

1. Song, Yang. Characteristics and Stability of High Performance Indium Zinc Oxide Thin Film Transistors.

Degree: Department of Physics, 2018, Brown University

 Amorphous oxide semiconductors (AOSs) have been intensively studied during the last 15 years due to their superior properties. The major application of AOS thin film… (more)

Subjects/Keywords: Indium zinc oxide

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Song, Y. (2018). Characteristics and Stability of High Performance Indium Zinc Oxide Thin Film Transistors. (Thesis). Brown University. Retrieved from https://repository.library.brown.edu/studio/item/bdr:792638/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Song, Yang. “Characteristics and Stability of High Performance Indium Zinc Oxide Thin Film Transistors.” 2018. Thesis, Brown University. Accessed August 25, 2019. https://repository.library.brown.edu/studio/item/bdr:792638/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Song, Yang. “Characteristics and Stability of High Performance Indium Zinc Oxide Thin Film Transistors.” 2018. Web. 25 Aug 2019.

Vancouver:

Song Y. Characteristics and Stability of High Performance Indium Zinc Oxide Thin Film Transistors. [Internet] [Thesis]. Brown University; 2018. [cited 2019 Aug 25]. Available from: https://repository.library.brown.edu/studio/item/bdr:792638/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Song Y. Characteristics and Stability of High Performance Indium Zinc Oxide Thin Film Transistors. [Thesis]. Brown University; 2018. Available from: https://repository.library.brown.edu/studio/item/bdr:792638/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Yang, Jyun-bao. The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory.

Degree: PhD, Electro-Optical Engineering, 2014, NSYSU

 Recently, with the advancement of portable electronic products, nonvolatile memories have attracted much attention. In order to increase the capacity and density of nonvolatile memory,… (more)

Subjects/Keywords: resistive random access memory; gallium oxide; indium oxide; amorphous indium-gallium-zinc-oxide thin film transistors; indium gallium oxide

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yang, J. (2014). The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038

Chicago Manual of Style (16th Edition):

Yang, Jyun-bao. “The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory.” 2014. Doctoral Dissertation, NSYSU. Accessed August 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038.

MLA Handbook (7th Edition):

Yang, Jyun-bao. “The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory.” 2014. Web. 25 Aug 2019.

Vancouver:

Yang J. The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory. [Internet] [Doctoral dissertation]. NSYSU; 2014. [cited 2019 Aug 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038.

Council of Science Editors:

Yang J. The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory. [Doctoral Dissertation]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038


Hong Kong University of Science and Technology

3. Lu, Lei. Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide.

Degree: 2014, Hong Kong University of Science and Technology

 Thin-film transistors (TFTs) based on metal oxides (MOs), especially zinc oxide (ZnO) and indium-gallium-zinc oxide (IGZO), are promising alternatives to silicon-based TFTs in future flat-panel… (more)

Subjects/Keywords: Thin film transistors; Metal oxide semiconductors; Zinc oxide; Indium gallium zinc oxide

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lu, L. (2014). Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1347295 ; http://repository.ust.hk/ir/bitstream/1783.1-71879/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, Lei. “Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed August 25, 2019. https://doi.org/10.14711/thesis-b1347295 ; http://repository.ust.hk/ir/bitstream/1783.1-71879/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, Lei. “Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide.” 2014. Web. 25 Aug 2019.

Vancouver:

Lu L. Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2019 Aug 25]. Available from: https://doi.org/10.14711/thesis-b1347295 ; http://repository.ust.hk/ir/bitstream/1783.1-71879/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu L. Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: https://doi.org/10.14711/thesis-b1347295 ; http://repository.ust.hk/ir/bitstream/1783.1-71879/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

4. Feng, Zhuoqun ECE. Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT.

Degree: 2018, Hong Kong University of Science and Technology

 With their relatively low process temperature, high field-effect mobility, low leakage current and high transparency, thin-film transistors (TFTs) based on metal oxide (MO), especially indium-gallium-zinc(more)

Subjects/Keywords: Thin film transistors; Indium gallium zinc oxide; Metal oxide semiconductors; Electrodes

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Feng, Z. E. (2018). Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Feng, Zhuoqun ECE. “Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed August 25, 2019. https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Feng, Zhuoqun ECE. “Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT.” 2018. Web. 25 Aug 2019.

Vancouver:

Feng ZE. Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2019 Aug 25]. Available from: https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Feng ZE. Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of California – Berkeley

5. Garcia, Guillermo. Near-Infrared Selective Plasmonic Electrochromic Windows.

Degree: Mechanical Engineering, 2012, University of California – Berkeley

 Residential and commercial buildings represent a prime opportunity to improve energy efficiency and sustainability worldwide. Currently, lighting and thermal management within buildings account for 20%… (more)

Subjects/Keywords: Nanotechnology; Energy; Materials Science; Aluminum Zinc Oxide; Electrochromic; Indium Tin Oxide; nanocrystal; Plasmonic; spectroelectrochemistry

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Garcia, G. (2012). Near-Infrared Selective Plasmonic Electrochromic Windows. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/90z590sd

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Garcia, Guillermo. “Near-Infrared Selective Plasmonic Electrochromic Windows.” 2012. Thesis, University of California – Berkeley. Accessed August 25, 2019. http://www.escholarship.org/uc/item/90z590sd.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Garcia, Guillermo. “Near-Infrared Selective Plasmonic Electrochromic Windows.” 2012. Web. 25 Aug 2019.

Vancouver:

Garcia G. Near-Infrared Selective Plasmonic Electrochromic Windows. [Internet] [Thesis]. University of California – Berkeley; 2012. [cited 2019 Aug 25]. Available from: http://www.escholarship.org/uc/item/90z590sd.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Garcia G. Near-Infrared Selective Plasmonic Electrochromic Windows. [Thesis]. University of California – Berkeley; 2012. Available from: http://www.escholarship.org/uc/item/90z590sd

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arizona

6. MacDonald, Gordon Alex. Nanoscale Characterization of the Electrical Properties of Oxide Electrodes at the Organic Semiconductor-Oxide Electrode Interface in Organic Solar Cells .

Degree: 2015, University of Arizona

 This dissertation focuses on characterizing the nanoscale and surface averaged electrical properties of transparent conducting oxide (TCO) electrodes such as indium tin oxide (ITO) and… (more)

Subjects/Keywords: Indium Tin Oxide; Nanoscale; Organic Photovoltaic; Solar cell; Zinc Oxide; AFM; Chemistry

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

MacDonald, G. A. (2015). Nanoscale Characterization of the Electrical Properties of Oxide Electrodes at the Organic Semiconductor-Oxide Electrode Interface in Organic Solar Cells . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/347338

Chicago Manual of Style (16th Edition):

MacDonald, Gordon Alex. “Nanoscale Characterization of the Electrical Properties of Oxide Electrodes at the Organic Semiconductor-Oxide Electrode Interface in Organic Solar Cells .” 2015. Doctoral Dissertation, University of Arizona. Accessed August 25, 2019. http://hdl.handle.net/10150/347338.

MLA Handbook (7th Edition):

MacDonald, Gordon Alex. “Nanoscale Characterization of the Electrical Properties of Oxide Electrodes at the Organic Semiconductor-Oxide Electrode Interface in Organic Solar Cells .” 2015. Web. 25 Aug 2019.

Vancouver:

MacDonald GA. Nanoscale Characterization of the Electrical Properties of Oxide Electrodes at the Organic Semiconductor-Oxide Electrode Interface in Organic Solar Cells . [Internet] [Doctoral dissertation]. University of Arizona; 2015. [cited 2019 Aug 25]. Available from: http://hdl.handle.net/10150/347338.

Council of Science Editors:

MacDonald GA. Nanoscale Characterization of the Electrical Properties of Oxide Electrodes at the Organic Semiconductor-Oxide Electrode Interface in Organic Solar Cells . [Doctoral Dissertation]. University of Arizona; 2015. Available from: http://hdl.handle.net/10150/347338


University of Akron

7. Rajala, Jonathan Watsell. ELECTROSPINNING FABRICATION OF CERAMIC FIBERS FOR TRANSPARENT CONDUCTING AND HOLLOW TUBE MEMBRANE APPLICATIONS.

Degree: PhD, Chemical Engineering, 2016, University of Akron

 Electrospinning is a simple method used to produce ceramic nanofibers from a polymer precursor with reproducible results. In this work, ceramic aluminum oxide fibers are… (more)

Subjects/Keywords: Chemical Engineering; electrospinning; core-shell; core-sheath; aluminum oxide; hollow; tube; membrane; transparent conducting oxide; ITO; indium tin oxide; indium zinc oxide

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rajala, J. W. (2016). ELECTROSPINNING FABRICATION OF CERAMIC FIBERS FOR TRANSPARENT CONDUCTING AND HOLLOW TUBE MEMBRANE APPLICATIONS. (Doctoral Dissertation). University of Akron. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=akron1480909959851349

Chicago Manual of Style (16th Edition):

Rajala, Jonathan Watsell. “ELECTROSPINNING FABRICATION OF CERAMIC FIBERS FOR TRANSPARENT CONDUCTING AND HOLLOW TUBE MEMBRANE APPLICATIONS.” 2016. Doctoral Dissertation, University of Akron. Accessed August 25, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=akron1480909959851349.

MLA Handbook (7th Edition):

Rajala, Jonathan Watsell. “ELECTROSPINNING FABRICATION OF CERAMIC FIBERS FOR TRANSPARENT CONDUCTING AND HOLLOW TUBE MEMBRANE APPLICATIONS.” 2016. Web. 25 Aug 2019.

Vancouver:

Rajala JW. ELECTROSPINNING FABRICATION OF CERAMIC FIBERS FOR TRANSPARENT CONDUCTING AND HOLLOW TUBE MEMBRANE APPLICATIONS. [Internet] [Doctoral dissertation]. University of Akron; 2016. [cited 2019 Aug 25]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=akron1480909959851349.

Council of Science Editors:

Rajala JW. ELECTROSPINNING FABRICATION OF CERAMIC FIBERS FOR TRANSPARENT CONDUCTING AND HOLLOW TUBE MEMBRANE APPLICATIONS. [Doctoral Dissertation]. University of Akron; 2016. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=akron1480909959851349


Lehigh University

8. Weiser, Philip Michael. Studies of Hydrogen Defects and Free-Carrier Absorption in Transparent Conducting Oxides using Fourier Transform Infrared Spectroscopy.

Degree: PhD, Physics, 2017, Lehigh University

 Transparent conducting oxides (TCOs) are wide-band-gap, metal-oxide semiconductors that combine high electrical conductivity with transparency to visible light. These properties have made TCOs attractive candidates… (more)

Subjects/Keywords: free-carrier absorption; gallium oxide; hydrogen defects; indium oxide; transparent conducting oxides; zinc oxide; Physical Sciences and Mathematics; Physics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Weiser, P. M. (2017). Studies of Hydrogen Defects and Free-Carrier Absorption in Transparent Conducting Oxides using Fourier Transform Infrared Spectroscopy. (Doctoral Dissertation). Lehigh University. Retrieved from https://preserve.lehigh.edu/etd/2872

Chicago Manual of Style (16th Edition):

Weiser, Philip Michael. “Studies of Hydrogen Defects and Free-Carrier Absorption in Transparent Conducting Oxides using Fourier Transform Infrared Spectroscopy.” 2017. Doctoral Dissertation, Lehigh University. Accessed August 25, 2019. https://preserve.lehigh.edu/etd/2872.

MLA Handbook (7th Edition):

Weiser, Philip Michael. “Studies of Hydrogen Defects and Free-Carrier Absorption in Transparent Conducting Oxides using Fourier Transform Infrared Spectroscopy.” 2017. Web. 25 Aug 2019.

Vancouver:

Weiser PM. Studies of Hydrogen Defects and Free-Carrier Absorption in Transparent Conducting Oxides using Fourier Transform Infrared Spectroscopy. [Internet] [Doctoral dissertation]. Lehigh University; 2017. [cited 2019 Aug 25]. Available from: https://preserve.lehigh.edu/etd/2872.

Council of Science Editors:

Weiser PM. Studies of Hydrogen Defects and Free-Carrier Absorption in Transparent Conducting Oxides using Fourier Transform Infrared Spectroscopy. [Doctoral Dissertation]. Lehigh University; 2017. Available from: https://preserve.lehigh.edu/etd/2872


Université de Grenoble

9. Nguyen, Thi Thu Thuy. Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED : Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED display.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2014, Université de Grenoble

Ce travail de thèse a pour sujet l'étude de transistors en couches minces (TFTs) à base d'Indium Gallium Zinc Oxide (IGZO). Nous nous sommes intéressés… (more)

Subjects/Keywords: Transitors en couches minces; Indium Gallium Zinc Oxide; Passivation; Tension de seuil; Recuit; AMOLED; Thin film transistors; Indium Gallium Zinc Oxide; Passivation; Threshold voltage; Annealing; AMOLED; 620

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Nguyen, T. T. T. (2014). Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED : Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED display. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2014GRENT060

Chicago Manual of Style (16th Edition):

Nguyen, Thi Thu Thuy. “Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED : Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED display.” 2014. Doctoral Dissertation, Université de Grenoble. Accessed August 25, 2019. http://www.theses.fr/2014GRENT060.

MLA Handbook (7th Edition):

Nguyen, Thi Thu Thuy. “Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED : Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED display.” 2014. Web. 25 Aug 2019.

Vancouver:

Nguyen TTT. Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED : Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED display. [Internet] [Doctoral dissertation]. Université de Grenoble; 2014. [cited 2019 Aug 25]. Available from: http://www.theses.fr/2014GRENT060.

Council of Science Editors:

Nguyen TTT. Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED : Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED display. [Doctoral Dissertation]. Université de Grenoble; 2014. Available from: http://www.theses.fr/2014GRENT060

10. SUN JIAN. FOREIGN ELEMENTS INCORPORATED INDIUM ZINC OXIDE TRANSPARENT SEMICONDUCTOR/CONDUCTOR.

Degree: 2012, National University of Singapore

Subjects/Keywords: Amorphous transparent conducting oxides; Indium zinc oxide; Foreign elements incorporated indium zinc oxide

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

JIAN, S. (2012). FOREIGN ELEMENTS INCORPORATED INDIUM ZINC OXIDE TRANSPARENT SEMICONDUCTOR/CONDUCTOR. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/35810

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

JIAN, SUN. “FOREIGN ELEMENTS INCORPORATED INDIUM ZINC OXIDE TRANSPARENT SEMICONDUCTOR/CONDUCTOR.” 2012. Thesis, National University of Singapore. Accessed August 25, 2019. http://scholarbank.nus.edu.sg/handle/10635/35810.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

JIAN, SUN. “FOREIGN ELEMENTS INCORPORATED INDIUM ZINC OXIDE TRANSPARENT SEMICONDUCTOR/CONDUCTOR.” 2012. Web. 25 Aug 2019.

Vancouver:

JIAN S. FOREIGN ELEMENTS INCORPORATED INDIUM ZINC OXIDE TRANSPARENT SEMICONDUCTOR/CONDUCTOR. [Internet] [Thesis]. National University of Singapore; 2012. [cited 2019 Aug 25]. Available from: http://scholarbank.nus.edu.sg/handle/10635/35810.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

JIAN S. FOREIGN ELEMENTS INCORPORATED INDIUM ZINC OXIDE TRANSPARENT SEMICONDUCTOR/CONDUCTOR. [Thesis]. National University of Singapore; 2012. Available from: http://scholarbank.nus.edu.sg/handle/10635/35810

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Canterbury

11. Whiteside, Matthew David. Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide.

Degree: Electrical and Electronic Engineering, 2014, University of Canterbury

Indium-Gallium-Zinc-Oxide (a-IGZO) is an amorphous oxide semiconductor that has been attracting increasing attention for use in flat panel display and optoelectronic applications. This is largely… (more)

Subjects/Keywords: IGZO; Indium Gallium Zinc Oxide; MESFET; AOS; Amorphous Semiconductor; Transparent Flexible Electronics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Whiteside, M. D. (2014). Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide. (Thesis). University of Canterbury. Retrieved from http://hdl.handle.net/10092/9588

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Whiteside, Matthew David. “Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide.” 2014. Thesis, University of Canterbury. Accessed August 25, 2019. http://hdl.handle.net/10092/9588.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Whiteside, Matthew David. “Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide.” 2014. Web. 25 Aug 2019.

Vancouver:

Whiteside MD. Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide. [Internet] [Thesis]. University of Canterbury; 2014. [cited 2019 Aug 25]. Available from: http://hdl.handle.net/10092/9588.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Whiteside MD. Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide. [Thesis]. University of Canterbury; 2014. Available from: http://hdl.handle.net/10092/9588

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

12. Yang, Man-Chun. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.

Degree: Master, Electro-Optical Engineering, 2013, NSYSU

 In recent year, the large size and high pixel is need for variously advanced displays. Thus, the stable reliability and standard characteristic is most important… (more)

Subjects/Keywords: indium-gallium-zinc-oxide thin film transistor; UV sensor; light induced instability; high current stress

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yang, M. (2013). Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Man-Chun. “Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.” 2013. Thesis, NSYSU. Accessed August 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Man-Chun. “Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.” 2013. Web. 25 Aug 2019.

Vancouver:

Yang M. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Aug 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang M. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

13. Fryer, Antony Colin. Amorphous Indium-Gallium-Zinc Oxide Planar Nanodiodes.

Degree: 2014, University of Manchester

 In this thesis work, novel planar nanodiodes (PNDs) using an amorphous indiumgallium- zinc oxide (IGZO) film as the active layer have been electrically characterised for… (more)

Subjects/Keywords: Planar Nanodiode; Self-Switching Diode; Indium-Gallium-Zinc Oxide; Nanoimprint; High Rectification; Self-aligned contacts

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fryer, A. C. (2014). Amorphous Indium-Gallium-Zinc Oxide Planar Nanodiodes. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:218002

Chicago Manual of Style (16th Edition):

Fryer, Antony Colin. “Amorphous Indium-Gallium-Zinc Oxide Planar Nanodiodes.” 2014. Doctoral Dissertation, University of Manchester. Accessed August 25, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:218002.

MLA Handbook (7th Edition):

Fryer, Antony Colin. “Amorphous Indium-Gallium-Zinc Oxide Planar Nanodiodes.” 2014. Web. 25 Aug 2019.

Vancouver:

Fryer AC. Amorphous Indium-Gallium-Zinc Oxide Planar Nanodiodes. [Internet] [Doctoral dissertation]. University of Manchester; 2014. [cited 2019 Aug 25]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:218002.

Council of Science Editors:

Fryer AC. Amorphous Indium-Gallium-Zinc Oxide Planar Nanodiodes. [Doctoral Dissertation]. University of Manchester; 2014. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:218002


New Jersey Institute of Technology

14. Yousef, Mustafa Mohammad. Amorphous metal oxide semiconductor thin film transistors for printed electronics.

Degree: MSin Electrical Engineering - (M.S.), Electrical and Computer Engineering, 2018, New Jersey Institute of Technology

  There is an acute market need for solution-processable semiconductor inks that can form the essential components of the printed analog and digital circuits. Currently,… (more)

Subjects/Keywords: Indium gallium zinc oxide; Semiconducting channel layer; Field-effect transistors; Electrical and Electronics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yousef, M. M. (2018). Amorphous metal oxide semiconductor thin film transistors for printed electronics. (Thesis). New Jersey Institute of Technology. Retrieved from https://digitalcommons.njit.edu/theses/1637

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yousef, Mustafa Mohammad. “Amorphous metal oxide semiconductor thin film transistors for printed electronics.” 2018. Thesis, New Jersey Institute of Technology. Accessed August 25, 2019. https://digitalcommons.njit.edu/theses/1637.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yousef, Mustafa Mohammad. “Amorphous metal oxide semiconductor thin film transistors for printed electronics.” 2018. Web. 25 Aug 2019.

Vancouver:

Yousef MM. Amorphous metal oxide semiconductor thin film transistors for printed electronics. [Internet] [Thesis]. New Jersey Institute of Technology; 2018. [cited 2019 Aug 25]. Available from: https://digitalcommons.njit.edu/theses/1637.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yousef MM. Amorphous metal oxide semiconductor thin film transistors for printed electronics. [Thesis]. New Jersey Institute of Technology; 2018. Available from: https://digitalcommons.njit.edu/theses/1637

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Loughborough University

15. Bittau, Francesco. Analysis and optimisation of window layers for thin film CDTE solar cells.

Degree: PhD, 2017, Loughborough University

 The work presented in this thesis focuses on the investigation and improvement of the window stack of layers for thin film CdTe solar cells fabricated… (more)

Subjects/Keywords: CdTe solar cells; Thin film; High resistance layer; Transparent conducting oxide; Magnesium doped zinc oxide; Aluminium doped zinc oxide; Titanium doped indium oxide; Band alignment; High mobility; Sputtering

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bittau, F. (2017). Analysis and optimisation of window layers for thin film CDTE solar cells. (Doctoral Dissertation). Loughborough University. Retrieved from https://dspace.lboro.ac.uk/2134/32642 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.740212

Chicago Manual of Style (16th Edition):

Bittau, Francesco. “Analysis and optimisation of window layers for thin film CDTE solar cells.” 2017. Doctoral Dissertation, Loughborough University. Accessed August 25, 2019. https://dspace.lboro.ac.uk/2134/32642 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.740212.

MLA Handbook (7th Edition):

Bittau, Francesco. “Analysis and optimisation of window layers for thin film CDTE solar cells.” 2017. Web. 25 Aug 2019.

Vancouver:

Bittau F. Analysis and optimisation of window layers for thin film CDTE solar cells. [Internet] [Doctoral dissertation]. Loughborough University; 2017. [cited 2019 Aug 25]. Available from: https://dspace.lboro.ac.uk/2134/32642 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.740212.

Council of Science Editors:

Bittau F. Analysis and optimisation of window layers for thin film CDTE solar cells. [Doctoral Dissertation]. Loughborough University; 2017. Available from: https://dspace.lboro.ac.uk/2134/32642 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.740212


Indian Institute of Science

16. Chirakkara, Saraswathi. Tuning Zinc Oxide Layers Towards White Light Emission.

Degree: 2012, Indian Institute of Science

 White light emitting diodes (LED) have drawn increasing attention due to their low energy consumption, high efficiency and potential to become primary lighting source by… (more)

Subjects/Keywords: Photoelectric Devices; Semiconductors; Zinc Oxide Semiconductors; White Light Emission; Lithium Doped Zinc Oxide Thin Films; Indium Doped Zinc Oxide Thin Films; Gallium Doped Zinc Oxide Thin Films; Thin Film Deposition; Zinc Oxide Thin Films; ZnO Thin Films; White Light Emitting Diodes; Pulsed Laser Deposition (PLD); Materials Science

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chirakkara, S. (2012). Tuning Zinc Oxide Layers Towards White Light Emission. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2324

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chirakkara, Saraswathi. “Tuning Zinc Oxide Layers Towards White Light Emission.” 2012. Thesis, Indian Institute of Science. Accessed August 25, 2019. http://hdl.handle.net/2005/2324.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chirakkara, Saraswathi. “Tuning Zinc Oxide Layers Towards White Light Emission.” 2012. Web. 25 Aug 2019.

Vancouver:

Chirakkara S. Tuning Zinc Oxide Layers Towards White Light Emission. [Internet] [Thesis]. Indian Institute of Science; 2012. [cited 2019 Aug 25]. Available from: http://hdl.handle.net/2005/2324.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chirakkara S. Tuning Zinc Oxide Layers Towards White Light Emission. [Thesis]. Indian Institute of Science; 2012. Available from: http://hdl.handle.net/2005/2324

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

17. Chirakkara, Saraswathi. Tuning Zinc Oxide Layers Towards White Light Emission.

Degree: 2012, Indian Institute of Science

 White light emitting diodes (LED) have drawn increasing attention due to their low energy consumption, high efficiency and potential to become primary lighting source by… (more)

Subjects/Keywords: Photoelectric Devices; Semiconductors; Zinc Oxide Semiconductors; White Light Emission; Lithium Doped Zinc Oxide Thin Films; Indium Doped Zinc Oxide Thin Films; Gallium Doped Zinc Oxide Thin Films; Thin Film Deposition; Zinc Oxide Thin Films; ZnO Thin Films; White Light Emitting Diodes; Pulsed Laser Deposition (PLD); Materials Science

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chirakkara, S. (2012). Tuning Zinc Oxide Layers Towards White Light Emission. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/handle/2005/2324 ; http://etd.ncsi.iisc.ernet.in/abstracts/2988/G25279-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chirakkara, Saraswathi. “Tuning Zinc Oxide Layers Towards White Light Emission.” 2012. Thesis, Indian Institute of Science. Accessed August 25, 2019. http://etd.iisc.ernet.in/handle/2005/2324 ; http://etd.ncsi.iisc.ernet.in/abstracts/2988/G25279-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chirakkara, Saraswathi. “Tuning Zinc Oxide Layers Towards White Light Emission.” 2012. Web. 25 Aug 2019.

Vancouver:

Chirakkara S. Tuning Zinc Oxide Layers Towards White Light Emission. [Internet] [Thesis]. Indian Institute of Science; 2012. [cited 2019 Aug 25]. Available from: http://etd.iisc.ernet.in/handle/2005/2324 ; http://etd.ncsi.iisc.ernet.in/abstracts/2988/G25279-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chirakkara S. Tuning Zinc Oxide Layers Towards White Light Emission. [Thesis]. Indian Institute of Science; 2012. Available from: http://etd.iisc.ernet.in/handle/2005/2324 ; http://etd.ncsi.iisc.ernet.in/abstracts/2988/G25279-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

18. Chen, Yu-te. Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors.

Degree: Master, Electro-Optical Engineering, 2013, NSYSU

 It is found that the metal-oxide semiconductor such as indium-gallium-zinc-oxide thin film transistor under the high current, high bias, and light illumination operation can cause… (more)

Subjects/Keywords: indium-gallium-zinc-oxide; InGaZnO; hot-carrier; self-heating; thin film transistor; metal-oxide semiconductor; TFT

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, Y. (2013). Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616113-143243

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yu-te. “Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors.” 2013. Thesis, NSYSU. Accessed August 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616113-143243.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yu-te. “Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors.” 2013. Web. 25 Aug 2019.

Vancouver:

Chen Y. Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Aug 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616113-143243.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Investigation of Electrical Characteristic Degradation Mechanisms Caused by the Hot-Carrier and Self-Heating Effects in InGaZnO Thin Film Transistors. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0616113-143243

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

19. Huang, Jheng-Jie. Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device.

Degree: PhD, Physics, 2013, NSYSU

 With the development of portable electronic products, the requirement of nonvolatile memory is higher than before. In order to increase the capacity of nonvolatile memory… (more)

Subjects/Keywords: gallium oxide; indium-gallium-zinc oxide thin film transistors; BiFeO; recoverable RRAM device; nonvolatile memory; RRAM; resistive random access memory

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Huang, J. (2013). Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157

Chicago Manual of Style (16th Edition):

Huang, Jheng-Jie. “Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device.” 2013. Doctoral Dissertation, NSYSU. Accessed August 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157.

MLA Handbook (7th Edition):

Huang, Jheng-Jie. “Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device.” 2013. Web. 25 Aug 2019.

Vancouver:

Huang J. Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2019 Aug 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157.

Council of Science Editors:

Huang J. Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157


North Carolina State University

20. Suresh, Arun. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics.

Degree: PhD, Electrical Engineering, 2010, North Carolina State University

 The ability to make electronic devices, that are transparent to visible and near infrared wavelength, is a relatively new field of research in the development… (more)

Subjects/Keywords: Amorphous oxide semiconductors; thin-film transistors; TFT; IGZO; Indium gallium zinc oxide; transparent circuits; bias stability; ring oscillator; non-volatile memory

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Suresh, A. (2010). Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/6157

Chicago Manual of Style (16th Edition):

Suresh, Arun. “Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics.” 2010. Doctoral Dissertation, North Carolina State University. Accessed August 25, 2019. http://www.lib.ncsu.edu/resolver/1840.16/6157.

MLA Handbook (7th Edition):

Suresh, Arun. “Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics.” 2010. Web. 25 Aug 2019.

Vancouver:

Suresh A. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics. [Internet] [Doctoral dissertation]. North Carolina State University; 2010. [cited 2019 Aug 25]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6157.

Council of Science Editors:

Suresh A. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics. [Doctoral Dissertation]. North Carolina State University; 2010. Available from: http://www.lib.ncsu.edu/resolver/1840.16/6157

21. Fryer, Antony Colin. Amorphous indium-gallium-zinc oxide planar nanodiodes.

Degree: Thesis (Eng.D.), 2014, University of Manchester

 In this thesis work, novel planar nanodiodes (PNDs) using an amorphous indium-gallium-zinc oxide (IGZO) film as the active layer have been electrically characterised for the… (more)

Subjects/Keywords: 621.3815; Planar Nanodiode; Self-Switching Diode; Indium-Gallium-Zinc Oxide; Nanoimprint; High Rectification; Self-aligned contacts

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fryer, A. C. (2014). Amorphous indium-gallium-zinc oxide planar nanodiodes. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/amorphous-indiumgalliumzinc-oxide-planar-nanodiodes(ae522385-1294-44bd-9e9b-82a1425dfc96).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.686726

Chicago Manual of Style (16th Edition):

Fryer, Antony Colin. “Amorphous indium-gallium-zinc oxide planar nanodiodes.” 2014. Doctoral Dissertation, University of Manchester. Accessed August 25, 2019. https://www.research.manchester.ac.uk/portal/en/theses/amorphous-indiumgalliumzinc-oxide-planar-nanodiodes(ae522385-1294-44bd-9e9b-82a1425dfc96).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.686726.

MLA Handbook (7th Edition):

Fryer, Antony Colin. “Amorphous indium-gallium-zinc oxide planar nanodiodes.” 2014. Web. 25 Aug 2019.

Vancouver:

Fryer AC. Amorphous indium-gallium-zinc oxide planar nanodiodes. [Internet] [Doctoral dissertation]. University of Manchester; 2014. [cited 2019 Aug 25]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/amorphous-indiumgalliumzinc-oxide-planar-nanodiodes(ae522385-1294-44bd-9e9b-82a1425dfc96).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.686726.

Council of Science Editors:

Fryer AC. Amorphous indium-gallium-zinc oxide planar nanodiodes. [Doctoral Dissertation]. University of Manchester; 2014. Available from: https://www.research.manchester.ac.uk/portal/en/theses/amorphous-indiumgalliumzinc-oxide-planar-nanodiodes(ae522385-1294-44bd-9e9b-82a1425dfc96).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.686726


University of Colorado

22. Reese, Brandon Jay. The Local Bonding Environment of Amorphous In-Zn-O Films Studied by X-ray Absorption Fine Structure and Total X-ray Scattering Using Synchrotron Radiation.

Degree: MS, Electrical, Computer & Energy Engineering, 2011, University of Colorado

  The structure of amorphous In-Zn-O (a-IZO) thin films was investigated using X-ray absorption fine structure (XAFS) and total X-ray scattering techniques. In spite of… (more)

Subjects/Keywords: amorphous; indium zinc oxide; thin film; XAFS; Electrical and Computer Engineering; Materials Science and Engineering; Physics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Reese, B. J. (2011). The Local Bonding Environment of Amorphous In-Zn-O Films Studied by X-ray Absorption Fine Structure and Total X-ray Scattering Using Synchrotron Radiation. (Masters Thesis). University of Colorado. Retrieved from https://scholar.colorado.edu/ecen_gradetds/37

Chicago Manual of Style (16th Edition):

Reese, Brandon Jay. “The Local Bonding Environment of Amorphous In-Zn-O Films Studied by X-ray Absorption Fine Structure and Total X-ray Scattering Using Synchrotron Radiation.” 2011. Masters Thesis, University of Colorado. Accessed August 25, 2019. https://scholar.colorado.edu/ecen_gradetds/37.

MLA Handbook (7th Edition):

Reese, Brandon Jay. “The Local Bonding Environment of Amorphous In-Zn-O Films Studied by X-ray Absorption Fine Structure and Total X-ray Scattering Using Synchrotron Radiation.” 2011. Web. 25 Aug 2019.

Vancouver:

Reese BJ. The Local Bonding Environment of Amorphous In-Zn-O Films Studied by X-ray Absorption Fine Structure and Total X-ray Scattering Using Synchrotron Radiation. [Internet] [Masters thesis]. University of Colorado; 2011. [cited 2019 Aug 25]. Available from: https://scholar.colorado.edu/ecen_gradetds/37.

Council of Science Editors:

Reese BJ. The Local Bonding Environment of Amorphous In-Zn-O Films Studied by X-ray Absorption Fine Structure and Total X-ray Scattering Using Synchrotron Radiation. [Masters Thesis]. University of Colorado; 2011. Available from: https://scholar.colorado.edu/ecen_gradetds/37


Loughborough University

23. Bowers, Jake. Development of high efficiency dye sensitized solar cells : novel conducting oxides, tandem devices and flexible solar cells.

Degree: PhD, 2011, Loughborough University

 Photovoltaic technologies use light from the sun to create electricity, using a wide range of materials and mechanisms. The generation of clean, renewable energy using… (more)

Subjects/Keywords: 621.31244; Dye sensitized solar cell; Transparent conducting oxide; Flexible solar cell; Tandem solar cell; High mobility; Aluminium doped zinc oxide; Titanium doped indium oxide; Sputtering

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bowers, J. (2011). Development of high efficiency dye sensitized solar cells : novel conducting oxides, tandem devices and flexible solar cells. (Doctoral Dissertation). Loughborough University. Retrieved from https://dspace.lboro.ac.uk/2134/9121 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.554136

Chicago Manual of Style (16th Edition):

Bowers, Jake. “Development of high efficiency dye sensitized solar cells : novel conducting oxides, tandem devices and flexible solar cells.” 2011. Doctoral Dissertation, Loughborough University. Accessed August 25, 2019. https://dspace.lboro.ac.uk/2134/9121 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.554136.

MLA Handbook (7th Edition):

Bowers, Jake. “Development of high efficiency dye sensitized solar cells : novel conducting oxides, tandem devices and flexible solar cells.” 2011. Web. 25 Aug 2019.

Vancouver:

Bowers J. Development of high efficiency dye sensitized solar cells : novel conducting oxides, tandem devices and flexible solar cells. [Internet] [Doctoral dissertation]. Loughborough University; 2011. [cited 2019 Aug 25]. Available from: https://dspace.lboro.ac.uk/2134/9121 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.554136.

Council of Science Editors:

Bowers J. Development of high efficiency dye sensitized solar cells : novel conducting oxides, tandem devices and flexible solar cells. [Doctoral Dissertation]. Loughborough University; 2011. Available from: https://dspace.lboro.ac.uk/2134/9121 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.554136

24. Talagrand, Clément. Transistor en couches minces avec canal en oxyde d’indium de gallium et de zinc : matériaux, procédés, dispositifs : Indium gallium zinc oxide based thin film transistor : Materials, processes, devices.

Degree: Docteur es, Microélectronique, 2015, Saint-Etienne, EMSE

Pour réaliser des fonctions électroniques sur support souple, le transistor en couches minces (TFT) est indispensable. Cette thèse a pour objectif d’approfondir les connaissances sur… (more)

Subjects/Keywords: Oxyde d’Indium Gallium Zinc; Transitor en couches minces; Ellipsométrie spectroscopique; Impression jet d’encre; Indium gallium zinc oxide; Thin-film transistor; Spectroscopic ellipsometry; Inkjet printing

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Talagrand, C. (2015). Transistor en couches minces avec canal en oxyde d’indium de gallium et de zinc : matériaux, procédés, dispositifs : Indium gallium zinc oxide based thin film transistor : Materials, processes, devices. (Doctoral Dissertation). Saint-Etienne, EMSE. Retrieved from http://www.theses.fr/2015EMSE0797

Chicago Manual of Style (16th Edition):

Talagrand, Clément. “Transistor en couches minces avec canal en oxyde d’indium de gallium et de zinc : matériaux, procédés, dispositifs : Indium gallium zinc oxide based thin film transistor : Materials, processes, devices.” 2015. Doctoral Dissertation, Saint-Etienne, EMSE. Accessed August 25, 2019. http://www.theses.fr/2015EMSE0797.

MLA Handbook (7th Edition):

Talagrand, Clément. “Transistor en couches minces avec canal en oxyde d’indium de gallium et de zinc : matériaux, procédés, dispositifs : Indium gallium zinc oxide based thin film transistor : Materials, processes, devices.” 2015. Web. 25 Aug 2019.

Vancouver:

Talagrand C. Transistor en couches minces avec canal en oxyde d’indium de gallium et de zinc : matériaux, procédés, dispositifs : Indium gallium zinc oxide based thin film transistor : Materials, processes, devices. [Internet] [Doctoral dissertation]. Saint-Etienne, EMSE; 2015. [cited 2019 Aug 25]. Available from: http://www.theses.fr/2015EMSE0797.

Council of Science Editors:

Talagrand C. Transistor en couches minces avec canal en oxyde d’indium de gallium et de zinc : matériaux, procédés, dispositifs : Indium gallium zinc oxide based thin film transistor : Materials, processes, devices. [Doctoral Dissertation]. Saint-Etienne, EMSE; 2015. Available from: http://www.theses.fr/2015EMSE0797

25. Dar, Ghulam Nabi. Metal oxide nanostructures and their applications.

Degree: 2015, University of Patras; Πανεπιστήμιο Πατρών

 Recently, researchers on nanoparticles and nanostructures has received a great deal of attention not only in the area of synthesis and characterization but also in… (more)

Subjects/Keywords: Οξείδια μετάλλων; Νανοδομές; Οξείδιο του ψευδαργύρου; Οξείδιο του Ψευδαργύρου εμπλουτσμένο με Άργυρο; Οξείδιο του Ψευδαργύρου εμπλουτσμένο με Δημήτριο, Οξείδιο του Ψευδαργύρου εμπλουτσμένο με Ίνδιο; Οξείδιο του σιδήρου; Χημικοί αισθητήρες; Φωτοβολταϊκά; Φωτοκατάλυση; Metal oxides; Nanostructures; Zinc oxide; Silver doped zinc oxide; Cerium doped zinc οxide; Indium doped zinc oxide; Iron oxide; Chemical sensors; Photovoltaic devices; Photocatalysts

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Dar, G. N. (2015). Metal oxide nanostructures and their applications. (Thesis). University of Patras; Πανεπιστήμιο Πατρών. Retrieved from http://hdl.handle.net/10442/hedi/39731

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dar, Ghulam Nabi. “Metal oxide nanostructures and their applications.” 2015. Thesis, University of Patras; Πανεπιστήμιο Πατρών. Accessed August 25, 2019. http://hdl.handle.net/10442/hedi/39731.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dar, Ghulam Nabi. “Metal oxide nanostructures and their applications.” 2015. Web. 25 Aug 2019.

Vancouver:

Dar GN. Metal oxide nanostructures and their applications. [Internet] [Thesis]. University of Patras; Πανεπιστήμιο Πατρών; 2015. [cited 2019 Aug 25]. Available from: http://hdl.handle.net/10442/hedi/39731.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dar GN. Metal oxide nanostructures and their applications. [Thesis]. University of Patras; Πανεπιστήμιο Πατρών; 2015. Available from: http://hdl.handle.net/10442/hedi/39731

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Southern California

26. Franzman, Matthew A. Solution-phase synthesis of metal chalcogenide nanocrystals at low temperatures using dialkyl dichalcogenide precursors.

Degree: PhD, Chemistry, 2010, University of Southern California

 Solution-phase synthetic reactions have proven to be viable routes toward semiconductor metal chalcogenide nanocrystals; however, these reactions are often reliant upon high temperatures, designer single-source… (more)

Subjects/Keywords: semiconductor; nanocrystal; nanorods; synthesis; nanocrystal synthesis; nanocrystal growth; growth kinetics; dichalcogenide; peroxide; disulfide; diselenide; green chemistry; inorganic chemistry; indium oxide; In2O3; indium sulfide; In2S3; copper indium sulfide; CuInS2; CIS; tin sulfide; SnS; tin selenide; SnSe; zinc fingers; aurothiomalate; myochrysine; auranofin; gold drugs

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Franzman, M. A. (2010). Solution-phase synthesis of metal chalcogenide nanocrystals at low temperatures using dialkyl dichalcogenide precursors. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/291102/rec/5953

Chicago Manual of Style (16th Edition):

Franzman, Matthew A. “Solution-phase synthesis of metal chalcogenide nanocrystals at low temperatures using dialkyl dichalcogenide precursors.” 2010. Doctoral Dissertation, University of Southern California. Accessed August 25, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/291102/rec/5953.

MLA Handbook (7th Edition):

Franzman, Matthew A. “Solution-phase synthesis of metal chalcogenide nanocrystals at low temperatures using dialkyl dichalcogenide precursors.” 2010. Web. 25 Aug 2019.

Vancouver:

Franzman MA. Solution-phase synthesis of metal chalcogenide nanocrystals at low temperatures using dialkyl dichalcogenide precursors. [Internet] [Doctoral dissertation]. University of Southern California; 2010. [cited 2019 Aug 25]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/291102/rec/5953.

Council of Science Editors:

Franzman MA. Solution-phase synthesis of metal chalcogenide nanocrystals at low temperatures using dialkyl dichalcogenide precursors. [Doctoral Dissertation]. University of Southern California; 2010. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/291102/rec/5953


NSYSU

27. Tsao, Shu-Wei. Electrical Analysis & Fabricated Investigation of Amorphous Active Layer Thin Film Transistor for Large Size Display Application.

Degree: PhD, Electro-Optical Engineering, 2010, NSYSU

 In this dissertation, the electrical characteristics of generally used hydrogenated amorphous silicon (a-Si:H) TFTs in LCD and newly risen amorphous indium-gallium-zinc oxide (a-IGZO) TFTs were… (more)

Subjects/Keywords: Mechanical Strain; UV Irradiation; amorphous indium-gallium-zinc oxide (a-IGZO) TFTs; Photo-leakage-current; Hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs)

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tsao, S. (2010). Electrical Analysis & Fabricated Investigation of Amorphous Active Layer Thin Film Transistor for Large Size Display Application. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1019110-225810

Chicago Manual of Style (16th Edition):

Tsao, Shu-Wei. “Electrical Analysis & Fabricated Investigation of Amorphous Active Layer Thin Film Transistor for Large Size Display Application.” 2010. Doctoral Dissertation, NSYSU. Accessed August 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1019110-225810.

MLA Handbook (7th Edition):

Tsao, Shu-Wei. “Electrical Analysis & Fabricated Investigation of Amorphous Active Layer Thin Film Transistor for Large Size Display Application.” 2010. Web. 25 Aug 2019.

Vancouver:

Tsao S. Electrical Analysis & Fabricated Investigation of Amorphous Active Layer Thin Film Transistor for Large Size Display Application. [Internet] [Doctoral dissertation]. NSYSU; 2010. [cited 2019 Aug 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1019110-225810.

Council of Science Editors:

Tsao S. Electrical Analysis & Fabricated Investigation of Amorphous Active Layer Thin Film Transistor for Large Size Display Application. [Doctoral Dissertation]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1019110-225810


University of Tennessee – Knoxville

28. Kwon, Seyeoul. Characterization and Fabrication of Active Matrix Thin Film Transistors for an Addressable Microfluidic Electrowetting Channel Device.

Degree: 2010, University of Tennessee – Knoxville

 The characterization and fabrication of active matrix thin film transistors (TFTs) has been studied for an addressable microfluidic electrowetting channel device as application. A new… (more)

Subjects/Keywords: thin film transistor; flat panel display; transparent display; Indium gallium zinc oxide; microfluidic electrowetting channel device; Electronic Devices and Semiconductor Manufacturing; Semiconductor and Optical Materials

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kwon, S. (2010). Characterization and Fabrication of Active Matrix Thin Film Transistors for an Addressable Microfluidic Electrowetting Channel Device. (Doctoral Dissertation). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_graddiss/892

Chicago Manual of Style (16th Edition):

Kwon, Seyeoul. “Characterization and Fabrication of Active Matrix Thin Film Transistors for an Addressable Microfluidic Electrowetting Channel Device.” 2010. Doctoral Dissertation, University of Tennessee – Knoxville. Accessed August 25, 2019. https://trace.tennessee.edu/utk_graddiss/892.

MLA Handbook (7th Edition):

Kwon, Seyeoul. “Characterization and Fabrication of Active Matrix Thin Film Transistors for an Addressable Microfluidic Electrowetting Channel Device.” 2010. Web. 25 Aug 2019.

Vancouver:

Kwon S. Characterization and Fabrication of Active Matrix Thin Film Transistors for an Addressable Microfluidic Electrowetting Channel Device. [Internet] [Doctoral dissertation]. University of Tennessee – Knoxville; 2010. [cited 2019 Aug 25]. Available from: https://trace.tennessee.edu/utk_graddiss/892.

Council of Science Editors:

Kwon S. Characterization and Fabrication of Active Matrix Thin Film Transistors for an Addressable Microfluidic Electrowetting Channel Device. [Doctoral Dissertation]. University of Tennessee – Knoxville; 2010. Available from: https://trace.tennessee.edu/utk_graddiss/892

29. Walsh, Nathaniel. Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors.

Degree: MS, Microelectronic Engineering, 2014, Rochester Institute of Technology

  Thin-film transistors (TFTs) with channel materials made out of hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) have been extensively investigated. Amorphous silicon continues… (more)

Subjects/Keywords: IGZO; Indium-Gallium-Zinc oxide; Passivation; TFT; Thin-film transistor

…and Hafnium-Indium-Zinc Oxide (HIZO). IGZO exhibits a high mobility (µn-ch… …x28;poly-Si), Zinc Oxide (ZnO), IndiumGallium-Zinc Oxide (IGZO)… …is Zinc-Tin-Silicon-Oxide (ZTSO) was investigated by Sundholm et al. ZTSO… …LTPS) dominate for switching devices in active matrix displays. Oxide semiconductors… …geometry. One such promising oxide semiconductor is IGZO. This chapter will review the electrical… 

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Walsh, N. (2014). Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/8550

Chicago Manual of Style (16th Edition):

Walsh, Nathaniel. “Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors.” 2014. Masters Thesis, Rochester Institute of Technology. Accessed August 25, 2019. https://scholarworks.rit.edu/theses/8550.

MLA Handbook (7th Edition):

Walsh, Nathaniel. “Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors.” 2014. Web. 25 Aug 2019.

Vancouver:

Walsh N. Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors. [Internet] [Masters thesis]. Rochester Institute of Technology; 2014. [cited 2019 Aug 25]. Available from: https://scholarworks.rit.edu/theses/8550.

Council of Science Editors:

Walsh N. Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors. [Masters Thesis]. Rochester Institute of Technology; 2014. Available from: https://scholarworks.rit.edu/theses/8550

30. KUMAR BHUPENDRA. A systematic study of transparent conducting indium zinc oxide thin films.

Degree: 2006, National University of Singapore

Subjects/Keywords: Indium Zinc Oxide (IZO); Transparent conducting oxide (TCO); Amorphous Transparent Conducting Oxide (a-TCO); Homologous region of IZO.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

BHUPENDRA, K. (2006). A systematic study of transparent conducting indium zinc oxide thin films. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/18888

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

BHUPENDRA, KUMAR. “A systematic study of transparent conducting indium zinc oxide thin films.” 2006. Thesis, National University of Singapore. Accessed August 25, 2019. http://scholarbank.nus.edu.sg/handle/10635/18888.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

BHUPENDRA, KUMAR. “A systematic study of transparent conducting indium zinc oxide thin films.” 2006. Web. 25 Aug 2019.

Vancouver:

BHUPENDRA K. A systematic study of transparent conducting indium zinc oxide thin films. [Internet] [Thesis]. National University of Singapore; 2006. [cited 2019 Aug 25]. Available from: http://scholarbank.nus.edu.sg/handle/10635/18888.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

BHUPENDRA K. A systematic study of transparent conducting indium zinc oxide thin films. [Thesis]. National University of Singapore; 2006. Available from: http://scholarbank.nus.edu.sg/handle/10635/18888

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2]

.