subject:(Indium Tin Oxide Film)

NSYSU

1. Wang , Jhao-Shun. Analysis of Residual Stress Distribution in ITO Thin Film Coated on Si-Substrate by Applying DIC Technique and Taguchi Method.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2016, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718116-153028

► In the MEMS process, a thin film is likely to be coated on a substrate. Residual stress is established in the coating upon cooling to… (more)

▼ In the MEMS process, a thin film is likely to be coated on a substrate. Residual stress is established in the coating upon cooling to room temperature because thermal expansion coefficients of the thin film and the substrate are different. The residual stress in the coating not only causes bending but also affects the quality of coating. This thesis discusses the relationship of the residual stress and its distribution with the parameters of the process and the thickness of the ITO thin film that is coated on the Si-substrate. Four parameters of coating process - coating time, sputtering power, working pressure, and argon flow rate â are considered here. In the experiment, each parameter is set to one of three levels, consistent with the Taguchi Method, yielding nine combinations. For each of the nine combinations, three Si-substrates are used. Measurements are made at nine points on each Si-substrate. Two sets of the in-plane displacement of the coating from two different angles of the screen can be measured by using digital image correlation technique. The obtained sets of in-plane displacements can be used to calculate the out-of-plane displacement, the components of residual stress in the x-direction and the y-direction can be calculated using the modified Stoneyâs equation. The equivalent residual stress is calculated from these components of residual stresses, and the coefficient of variation is calculated from the average and standard deviation of the equivalent residual stress at the nine points on the Si-substrate. Finally, the distribution of residual stress in coating is discussed with reference to the experimentally obtained coefficient of variation. The experimental results indicate that the coating time and the sputtering power importantly affect the magnitude of residual stress, but the working pressure and the argon flow rate have very little effect. Additionally, the experimental results show that the residual stress distribution is affected by coating time, sputtering power, argon flow rate and working pressure, in order of declining strength of the effect. The coating time most strongly affects the coating process. As the coating thickness increases, the residual stress decreases and the variation among measurements made of three Si-substrates of same combination declines. Restated, the precision of the experimental measurements improves with the coating thickness, but the distribution of residual stress becomes less uniform. Advisors/Committee Members: T. N. Shiau (chair), Jung-Hung Sun (chair), Chung-Ting Wang (chair), Chi-Hui Chien (committee member).

Subjects/Keywords: Digital Image Correlation Method; Indium Tin Oxide Film; Taguchi Method; Coating Residual Stress; Coating Distribution

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Wang , J. (2016). Analysis of Residual Stress Distribution in ITO Thin Film Coated on Si-Substrate by Applying DIC Technique and Taguchi Method. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718116-153028

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Wang , Jhao-Shun. “Analysis of Residual Stress Distribution in ITO Thin Film Coated on Si-Substrate by Applying DIC Technique and Taguchi Method.” 2016. Thesis, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718116-153028.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Wang , Jhao-Shun. “Analysis of Residual Stress Distribution in ITO Thin Film Coated on Si-Substrate by Applying DIC Technique and Taguchi Method.” 2016. Web. 28 Feb 2021.

Vancouver:

Wang J. Analysis of Residual Stress Distribution in ITO Thin Film Coated on Si-Substrate by Applying DIC Technique and Taguchi Method. [Internet] [Thesis]. NSYSU; 2016. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718116-153028.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang J. Analysis of Residual Stress Distribution in ITO Thin Film Coated on Si-Substrate by Applying DIC Technique and Taguchi Method. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718116-153028

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

2. Peng, Shiang-Yi. The influence of oxygen ions adsorption layer on resistive switching mechanism of resistance random access memory.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-134801

► This paper is surrounded by oxygen ions have better adsorption characteristics of indium tin oxide (ITO) and Transition metal gadolinium used in resistive random access… (more)

▼ This paper is surrounded by oxygen ions have better adsorption characteristics of indium tin oxide (ITO) and Transition metal gadolinium used in resistive random access memory (RRAM). Discussion RRAM switching mechanism and improve it. First, use of multi-target magnetron sputtering system making gadolinium oxide (Gd2O3) films in Gd: SiO2 / TiN and covered Pt with top electrode .And comparison with structure Pt / Gd: SiO2 / TiN. Through measurement in electrical can find that the structure have the buffer layer (Gd2O3) existed limiting effect ,Itâs presumably due to Gdâs outer space has higher orbital . And further found that asymmetric voltage operation, will change the resistance and polarity direction. In the phenomenon can emergence of complementary resistive switching characteristics (CRS). Then used ITO, which has high transparency and good electrical conductivity and has a lot of oxygen vacancies. Caused it to have a good oxygen ion adsorption. This section will be used as sputtering the electrode ITO on Gd: SiO2 / TiN. Compare with buffer layer's device and ITO/Gd: SiO2 / TiN can find ITO/Gd: SiO2 / TiN has effectively reduce power consumption and operating voltage. Use Current-Voltage Fitting and found that ITO / Gd: SiO2 / TiN 's Reset characteristics operation on Schottky emission. Mainly speculate driven by the oxygen ions in electric field to move and switching resistance .Other case of the multi-stage Set characteristics be use Fast IV measurements and fitting the mechanism , presumably the resistance first through in Gd: SiO2 to ITO , and then drive the dielectric coefficient of oxygen ions in ITO layer . But after placement more than four months, will find that the measurement of I-V curve are significant instability phenomenon. Therefore, this section leads to use of water vapor, oxygen ,and measurement, and then to clarify the current conduction mechanism, so found that the amount of oxygen will affect the barrier height of it and thereby enabling the current characteristics produce change. In order to improve this phenomenon, Si3N4 protective cover layer can be effectively found good stability . Finally, to the sample with water vapor thermal annealing processes , the operating current of the devices decrease 10 times after Water vapor RTA. Cause by owing to the introduction of oxygen through defects repairing process by H2O. It is possible to reduce the operating current and power consumption. In order to make the device to have better development and application, this section will sputter device on type of flexible artificial skin , and found low leakage currents resistance switching characteristics. Advisors/Committee Members: Chun-Chieh Lin (chair), Ting Chang Chang (chair), Tsung-Ming Tsai (committee member).

Subjects/Keywords: RRAM; Complementary resistive switches; oxygen ion-adsorbing layer; transparent conductive film of indium tin oxide; gadolinium; flexible

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Peng, S. (2014). The influence of oxygen ions adsorption layer on resistive switching mechanism of resistance random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-134801

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Peng, Shiang-Yi. “The influence of oxygen ions adsorption layer on resistive switching mechanism of resistance random access memory.” 2014. Thesis, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-134801.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Peng, Shiang-Yi. “The influence of oxygen ions adsorption layer on resistive switching mechanism of resistance random access memory.” 2014. Web. 28 Feb 2021.

Vancouver:

Peng S. The influence of oxygen ions adsorption layer on resistive switching mechanism of resistance random access memory. [Internet] [Thesis]. NSYSU; 2014. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-134801.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Peng S. The influence of oxygen ions adsorption layer on resistive switching mechanism of resistance random access memory. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0609114-134801

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

3. Su, Fang-I. Effects of Thickness on the Thermal Expansion Coefficient of ITO/PET Film.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2011, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0815111-123009

► In this studing, application of the digital image correlation method (DIC) for determining the coefficient of thermal expansion (CTE) of Indium Tin Oxide/Polyethylene Terephthalate(ITO/PET) thin… (more)

Subjects/Keywords: Coefficient of Thermal Expansion; Indium Tin Oxide Film; Digital Image Correlation Method; Thickness; Polyethylene Terephthalate Substrat

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Su, F. (2011). Effects of Thickness on the Thermal Expansion Coefficient of ITO/PET Film. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0815111-123009

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Su, Fang-I. “Effects of Thickness on the Thermal Expansion Coefficient of ITO/PET Film.” 2011. Thesis, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0815111-123009.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Su, Fang-I. “Effects of Thickness on the Thermal Expansion Coefficient of ITO/PET Film.” 2011. Web. 28 Feb 2021.

Vancouver:

Su F. Effects of Thickness on the Thermal Expansion Coefficient of ITO/PET Film. [Internet] [Thesis]. NSYSU; 2011. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0815111-123009.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Su F. Effects of Thickness on the Thermal Expansion Coefficient of ITO/PET Film. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0815111-123009

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Osiak, Michal J. The role of structure in the electrochemical performance of nanostructured metal oxides for lithium ion battery anodes.

Degree: 2015, University College Cork

URL: http://hdl.handle.net/10468/2059

► The Li-ion battery has for a number of years been a key factor that has enabled an ever increasing number of modern consumer devices, while… (more)

▼ The Li-ion battery has for a number of years been a key factor that has enabled an ever increasing number of modern consumer devices, while in recent years has also been sought to power a range of emerging electric and hybrid electric vehicles. Due to their importance and popularity, a number of characteristics of Li-ion batteries have been subjected to intense work aimed at radical improvement. Although electrode material selection intrinsically defines characteristics like maximum capacity or voltage, engineering of the electrode structure may yield significant improvements to the lifetime performance of the battery, which would not be available if the material was used in its bulk form. The body of work presented in this thesis describes the relationship between the structure of electrochemically active materials and the course of the electrochemical processes occurring within the electrode. Chapter one describes the motivation behind the research presented herein. Chapter two serves to highlight a number of key advancements which have been made and detailed in the literature over recent years, pertaining to the use of nanostructured materials in Li-ion technology. Chapter three details methods and techniques applied in developing the body of work presented in this thesis. Chapter four details structural, molecular and electrochemical characteristics of tin oxide nanoparticle based electrodes, with particular emphasis on the relationship between the size distribution and the electrode performance. Chapter five presents findings of structural, electrochemical and optical study of indium oxide nanoparticles grown on silicon by molecular beam epitaxy. In chapter 6, tin oxide inverted opal electrodes are investigated for the conduct of the electrochemical performance of the electrodes under varying rate of change of potential. Chapter 7 presents the overall conclusions drawn from the results presented in this thesis, coupled with an indication of potential future work which may be explored further. Advisors/Committee Members: O'Dwyer, Colm.

Subjects/Keywords: Nanostructures; Batteries; Anodes; Lithium ion; Metal oxide; Tin oxide; Indium oxide; Inverted opals

11 more images…

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Osiak, M. J. (2015). The role of structure in the electrochemical performance of nanostructured metal oxides for lithium ion battery anodes. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/2059

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Osiak, Michal J. “The role of structure in the electrochemical performance of nanostructured metal oxides for lithium ion battery anodes.” 2015. Thesis, University College Cork. Accessed February 28, 2021. http://hdl.handle.net/10468/2059.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Osiak, Michal J. “The role of structure in the electrochemical performance of nanostructured metal oxides for lithium ion battery anodes.” 2015. Web. 28 Feb 2021.

Vancouver:

Osiak MJ. The role of structure in the electrochemical performance of nanostructured metal oxides for lithium ion battery anodes. [Internet] [Thesis]. University College Cork; 2015. [cited 2021 Feb 28]. Available from: http://hdl.handle.net/10468/2059.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Osiak MJ. The role of structure in the electrochemical performance of nanostructured metal oxides for lithium ion battery anodes. [Thesis]. University College Cork; 2015. Available from: http://hdl.handle.net/10468/2059

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Oregon State University

5. Heineck, Daniel Philip. Zinc tin oxide thin-film transistor circuits.

Degree: MS, Electrical and Computer Engineering, 2008, Oregon State University

URL: http://hdl.handle.net/1957/9975

► The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO)… (more)

▼ The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice due to its low cost and ability to be deposited via DC reactive sputtering. In the absence of an acceptable ZTO wet etch process, a plasma-etching process using Ar/CH₄ is developed for both 1:1 and 2:1 ZTO compositions. An Ar/CH₄ plasma etch process is also designed for indium gallium oxide (IGO), indium gallium zinc oxide (IGZO), and indium tin oxide (ITO). Ar/CH₄ dry etches have excellent selectivity with respect to SiO₂, providing a route for obtaining patterned ZTO channels. A critical asset of ZTO process integration involves removing polymer deposits after ZTO etching without active layer damage. A ZTO process is developed for the fabrication of integrated circuits which use ZTO channel enhancement-mode TFTs. Such ZTO TFTs exhibit incremental and average mobilities of 23 and 18 cm²V⁻¹s⁻¹, respectively, turn-on voltages approximately 0 to 1.5 V and subthreshold swings below 0.5 V/dec when annealed in air at 400 °C for 1 hour. Several types of ZTO TFT circuits are realized for the first time. Despite large parasitic capacitances due to large gate-source and gate-drain overlaps, AC/DC rectifiers are fabricated and found to operate in the MHz range. Thus, they are usable for RFID and other equivalent-speed applications. Finally, a ZTO process for simultaneously fabricating both enhancement-mode and depletion-mode TFTs on a single substrate using a single target and anneal step is developed. This dual-channel process is used to build a high-gain two-transistor enhancement/depletion inverter. At a rail voltage of 10 V, this inverter has a gain of 10.6 V/V, the highest yet reported for an AOS-based inverter. This E/D inverter is an important new functional block which will enable the realization of more complex digital logic circuits. Advisors/Committee Members: Wager, John (advisor), Conley, John F. Jr (committee member).

Subjects/Keywords: zinc tin oxide; Thin film transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Heineck, D. P. (2008). Zinc tin oxide thin-film transistor circuits. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/9975

Chicago Manual of Style (16^th Edition):

Heineck, Daniel Philip. “Zinc tin oxide thin-film transistor circuits.” 2008. Masters Thesis, Oregon State University. Accessed February 28, 2021. http://hdl.handle.net/1957/9975.

MLA Handbook (7^th Edition):

Heineck, Daniel Philip. “Zinc tin oxide thin-film transistor circuits.” 2008. Web. 28 Feb 2021.

Vancouver:

Heineck DP. Zinc tin oxide thin-film transistor circuits. [Internet] [Masters thesis]. Oregon State University; 2008. [cited 2021 Feb 28]. Available from: http://hdl.handle.net/1957/9975.

Council of Science Editors:

Heineck DP. Zinc tin oxide thin-film transistor circuits. [Masters Thesis]. Oregon State University; 2008. Available from: http://hdl.handle.net/1957/9975

NSYSU

6. Yang, Jyun-bao. The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory.

Degree: PhD, Electro-Optical Engineering, 2014, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038

► Recently, with the advancement of portable electronic products, nonvolatile memories have attracted much attention. In order to increase the capacity and density of nonvolatile memory,… (more)

▼ Recently, with the advancement of portable electronic products, nonvolatile memories have attracted much attention. In order to increase the capacity and density of nonvolatile memory, the device must be continuously miniaturized. However, with their scaling-down, conventional nonvolatile floating gate memory has reached it physical limits. Hence, the new generations of nonvolatile memories are developed to solve this problem. Resistive random access memory (RRAM) is considered to replace conventional flash memory become a great potential candidates for nest generation nonvolatile memories due to its advantageous properties of simple structure and excellent operation property. We will investigate the resistive switching mechanisms of the InxGayO1-x-y based RRAM and amorphous indium-gallium-zine- oxide thin film transistors (a-IGZO TFTs). In the first part, we investigated the gallium oxide based RRAM with different oxygen concentrations since the resistance switching characteristics is related to oxygen ions migration. Moreover, the different resistance switching property is observed and the effective thickness can be estimated. In the second part, we proposed indium oxide based RRAM devices and investigate the different resistance switching behavior between transient mode and steady mode due to the cross-section area of the conduction path. The indium oxide based RRAM device exhibit a self-compliance behavior in the material itself due to the variable series resistor. Moreover, we investigated indium oxide with oxygen concentrations since the resistivity and electrical property of indium film related to oxygen concentration. The lower self-compliance current can be attributed to larger variable series resistor and the operation current can be reduced effectively from the additional oxygen ions. In the third part, we design the indium gallium oxide based RRAM and observed the two kinds of resistance switching behavior by different operation conditions. The different resistance switching mechanism proportions are demonstrated the oxygen vacancies and metallic filaments by electric property and material analysis. Finally, the a-IGZO TFTs can be operated either as transistors or RRAM device. These resistance switching characteristics are dominated by oxygen vacancies and the formation of an oxygen-rich layer. Advisors/Committee Members: Tsung-Ming Tsai (chair), Tzu-Ming Cheng (chair), Cheng-tung Huang (chair), Ting-Chang Chang (chair), An-Kuo Chu (committee member).

Subjects/Keywords: resistive random access memory; gallium oxide; indium oxide; amorphous indium-gallium-zinc-oxide thin film transistors; indium gallium oxide

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APA (6^th Edition):

Yang, J. (2014). The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038

Chicago Manual of Style (16^th Edition):

Yang, Jyun-bao. “The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory.” 2014. Doctoral Dissertation, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038.

MLA Handbook (7^th Edition):

Yang, Jyun-bao. “The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory.” 2014. Web. 28 Feb 2021.

Vancouver:

Yang J. The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory. [Internet] [Doctoral dissertation]. NSYSU; 2014. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038.

Council of Science Editors:

Yang J. The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory. [Doctoral Dissertation]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038

NSYSU

7. Wu, Yueh-chun. Study of Organic Solar Cell with Nanospheres Substrate and Flexible Substrates of Different Materials and Thickness.

Degree: Master, Communications Engineering, 2014, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0608114-181619

► In this paper, to investigate organic solar cells optical characteristics of Al / P3HT / PEDOT: PSS / Indium tin oxide (ITO)/ substrate with different… (more)

Subjects/Keywords: Indium tin oxide (ITO); Organic solar-cell; Power conversion efficiency

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APA (6^th Edition):

Wu, Y. (2014). Study of Organic Solar Cell with Nanospheres Substrate and Flexible Substrates of Different Materials and Thickness. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0608114-181619

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Wu, Yueh-chun. “Study of Organic Solar Cell with Nanospheres Substrate and Flexible Substrates of Different Materials and Thickness.” 2014. Thesis, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0608114-181619.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Wu, Yueh-chun. “Study of Organic Solar Cell with Nanospheres Substrate and Flexible Substrates of Different Materials and Thickness.” 2014. Web. 28 Feb 2021.

Vancouver:

Wu Y. Study of Organic Solar Cell with Nanospheres Substrate and Flexible Substrates of Different Materials and Thickness. [Internet] [Thesis]. NSYSU; 2014. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0608114-181619.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu Y. Study of Organic Solar Cell with Nanospheres Substrate and Flexible Substrates of Different Materials and Thickness. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0608114-181619

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

8. Ma, Hung-jen. High quality ITO films deposited by Radio-Frequency magnetron sputtering for display applications.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2005, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0613105-220306

► Indium tin oxide (ITO) films were deposited onto the glass substrate by rf reactive magnetron sputtering method. Deposition was performed by changing processing conditions, such… (more)

Subjects/Keywords: sputtering; Indium tin oxide

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APA (6^th Edition):

Ma, H. (2005). High quality ITO films deposited by Radio-Frequency magnetron sputtering for display applications. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0613105-220306

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Ma, Hung-jen. “High quality ITO films deposited by Radio-Frequency magnetron sputtering for display applications.” 2005. Thesis, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0613105-220306.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Ma, Hung-jen. “High quality ITO films deposited by Radio-Frequency magnetron sputtering for display applications.” 2005. Web. 28 Feb 2021.

Vancouver:

Ma H. High quality ITO films deposited by Radio-Frequency magnetron sputtering for display applications. [Internet] [Thesis]. NSYSU; 2005. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0613105-220306.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ma H. High quality ITO films deposited by Radio-Frequency magnetron sputtering for display applications. [Thesis]. NSYSU; 2005. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0613105-220306

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

9. Cheng, Rong-jian. Fabrication of Conductive and High Reflective Distributed Bragg Reflectors on Glass and Flexible Substrates.

Degree: Master, Electro-Optical Engineering, 2013, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0506113-164028

► In this study, distributed Bragg reflectors (DBRs) on flexible substrates based on dense ITO and porous ITO bilayers were demonstrated. In the fabrication of the… (more)

Subjects/Keywords: distributed Bragg reflectors; supercritical CO2; flexible; Indium tin oxide; porous

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APA (6^th Edition):

Cheng, R. (2013). Fabrication of Conductive and High Reflective Distributed Bragg Reflectors on Glass and Flexible Substrates. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0506113-164028

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Cheng, Rong-jian. “Fabrication of Conductive and High Reflective Distributed Bragg Reflectors on Glass and Flexible Substrates.” 2013. Thesis, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0506113-164028.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Cheng, Rong-jian. “Fabrication of Conductive and High Reflective Distributed Bragg Reflectors on Glass and Flexible Substrates.” 2013. Web. 28 Feb 2021.

Vancouver:

Cheng R. Fabrication of Conductive and High Reflective Distributed Bragg Reflectors on Glass and Flexible Substrates. [Internet] [Thesis]. NSYSU; 2013. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0506113-164028.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cheng R. Fabrication of Conductive and High Reflective Distributed Bragg Reflectors on Glass and Flexible Substrates. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0506113-164028

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of California – Berkeley

10. Lounis, Sebastien Dahmane. The role of dopant distribution on the optoelectronic properties of tin-doped indium oxide films.

Degree: Applied Science & Technology, 2014, University of California – Berkeley

URL: http://www.escholarship.org/uc/item/3nt0s2h8

► Colloidally prepared nanocrystals of transparent conducting oxide (TCO) semiconductors have emerged in the past decade as an exciting new class of plasmonic materials. In recent… (more)

▼ Colloidally prepared nanocrystals of transparent conducting oxide (TCO) semiconductors have emerged in the past decade as an exciting new class of plasmonic materials. In recent years, there has been tremendous progress in developing synthetic methods for the growth of these nanocrystals, basic characterization of their properties, and their successful integration into optoelectronic and electrochemical devices. However, many fundamental questions remain about the physics of localized surface plasmon resonance (LSPR) in these materials, and how their optoelectronic properties derive from their underlying structural properties. In particular, the influence of the concentration and distribution of dopant ions and compensating defects on the optoelectronic properties of TCO nanocrystals has seen little investigation.Indium tin oxide (ITO) is the most widely studied and commercially deployed TCO. Herein we investigate the role of the distribution of tin dopants on the optoelectronic properties of colloidally prepared ITO nanocrystals. Owing to a high free electron density, ITO nanocrystals display strong LSPR absorption in the near infrared. Depending on the particular organic ligands used, they are soluble in various solvents and can readily be integrated into densely packed nanocrystal films with high conductivities. Using a combination of spectroscopic techniques, modeling and simulation of the optical properties of the nanocrystals using the Drude model, and transport measurements, it is demonstrated herein that the radial distribution of tin dopants has a strong effect on the optoelectronic properties of ITO nanocrystals. ITO nanocrystals were synthesized in both surface-segregated and uniformly distributed dopant profiles. Temperature dependent measurements of optical absorbance were first combined with Drude modeling to extract the internal electrical properties of the ITO nanocrystals, demonstrating that they are well-behaved degenerately doped semiconductors displaying finite conductivity at low temperature and room temperature conductivity reduced by one order of magnitude from that of high-quality thin film ITO. Synchrotron based x-ray photoelectron spectroscopy (XPS) was then employed to perform detailed depth profiling of the elemental composition of ITO nanocrystals, confirming the degree of dopant surface-segregation. Based on free carrier concentrations extracted from Drude fitting of LSPR absorbance, an inverse correlation was found between surface segregation of tin and overall dopant activation. Furthermore, radial distribution of dopants was found to significantly affect the lineshape and quality factor of the LSPR absorbance. ITO nanocrystals with highly surface segregated dopants displayed symmetric LSPRs with high quality factors, while uniformly doped ITO nanocrystals displayed asymmetric LSPRs with reduced quality factors. These effects are attributed to damping of the plasmon by Coulombic scattering off ionized dopant impurities. Finally, the distribution of dopants is also found to influence…

Subjects/Keywords: Nanoscience; Physics; Chemistry; indium tin oxide; nanocrystals; plasmonics

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APA (6^th Edition):

Lounis, S. D. (2014). The role of dopant distribution on the optoelectronic properties of tin-doped indium oxide films. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/3nt0s2h8

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Lounis, Sebastien Dahmane. “The role of dopant distribution on the optoelectronic properties of tin-doped indium oxide films.” 2014. Thesis, University of California – Berkeley. Accessed February 28, 2021. http://www.escholarship.org/uc/item/3nt0s2h8.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Lounis, Sebastien Dahmane. “The role of dopant distribution on the optoelectronic properties of tin-doped indium oxide films.” 2014. Web. 28 Feb 2021.

Vancouver:

Lounis SD. The role of dopant distribution on the optoelectronic properties of tin-doped indium oxide films. [Internet] [Thesis]. University of California – Berkeley; 2014. [cited 2021 Feb 28]. Available from: http://www.escholarship.org/uc/item/3nt0s2h8.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lounis SD. The role of dopant distribution on the optoelectronic properties of tin-doped indium oxide films. [Thesis]. University of California – Berkeley; 2014. Available from: http://www.escholarship.org/uc/item/3nt0s2h8

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

11. Edney Geraldo da Silveira Firmiano. Síntese, caracterização e deposição sobre óxido de grafeno de nanopartículas de óxido de índio dopado com estanho (ITO).

Degree: 2011, Universidade Federal de São Carlos

URL: http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=6472

►

In this study, in the first step, Indium tin oxide nanoparticles were synthesized via a non-aqueous route involving the solvothermal treatment of indium (III) acetylacetonate… (more)

▼

In this study, in the first step, Indium tin oxide nanoparticles were synthesized via a non-aqueous route involving the solvothermal treatment of indium (III) acetylacetonate and tin (IV) chloride in polyethylene glycol Mw=1000. The use of microwave heating reduced the reaction time considerably when compared to traditional heating methods. An analysis by transmission electron microscopy (TEM) revealed particles of relatively uniform sizes and shapes. The high crystallinity of the material was observed by high resolution transmission electron microscopy (HRTEM). The nanocristal size founded by count was 5,1nm. A powder X-ray diffraction analysis indicated that all the materials were crystalline. Infrared spectra confirmed the presence of organic material on the nanoparticle surface. By thermogravimetric analysis (TGA) determined that 11.3% of the total mass corresponds to the polymer. Resistivity values below 10-1 Ω.cm were obtained in thin films and pellets, and semiconductor behavior. In the second step, a model to control the covered area of graphene oxide (GO) sheets by ITO nanoparticles was proposed. The method used was add graphene oxide at the synthetic route to obtain pure ITO. The composites were characterized by XRD, FT-IR, TGA and TEM. XRD results for the synthesized materials confirmed the diffraction patterns of ITO in the different composites synthesized. Through the analysis of FT-IR was possible confirm the presence of the polymer formed on the surface of the oxide nanoparticle and functional groups of graphene oxide sheets. The polymer attached on the oxide surface is responsible for the strong interaction between the ITO and graphen oxide sheets. TEM images for the samples with different cover percentage showed the controller achieved with the synthesis proposed. The composite with 100 or 10% of metal oxides covering the sheets surface did not show the presence of nanocrystals out sheets. The percent value of the covered area obtained of 15% founded by image J analisys is near to the calculated value. From this value we can say that the model works well to control the covered area of GO by nanocristals. The electrical resistivity values found are comparable to the pure ITO, however, with a smaller amount of ITO.

Neste estudo, na primeira etapa, nanopartículas de óxido de índio dopado com estanho foram sintetizadas por uma rota não aquosa envolvendo o tratamento solvotermal de acetilacetonato de índio (III) e cloreto de estanho (IV) em polietilenoglicol de massa molecular 1000. O uso de aquecimento auxiliado por microondas reduziu o tempo de reação quando comparado aos métodos tradicionais de aquecimento. A análise por microscopia eletrônica de transmissão (TEM) mostrou partículas com tamanho e forma relativamente uniformes. A alta cristalinidade do material foi observada por microscopia eletrônica de alta resolução (HRTEM). O tamanho dos nanocristais obtidos por contagem foi de 5,1 nm. A análise de difração de Raios-X (DRX) indicou a cristalinidade do material. O espectro de infravermelho…

Advisors/Committee Members: Edson Roberto Leite.

Subjects/Keywords: Físico-química; ITO (Indium Tin Oxide); Grafeno; QUIMICA

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APA (6^th Edition):

Firmiano, E. G. d. S. (2011). Síntese, caracterização e deposição sobre óxido de grafeno de nanopartículas de óxido de índio dopado com estanho (ITO). (Thesis). Universidade Federal de São Carlos. Retrieved from http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=6472

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Firmiano, Edney Geraldo da Silveira. “Síntese, caracterização e deposição sobre óxido de grafeno de nanopartículas de óxido de índio dopado com estanho (ITO).” 2011. Thesis, Universidade Federal de São Carlos. Accessed February 28, 2021. http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=6472.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Firmiano, Edney Geraldo da Silveira. “Síntese, caracterização e deposição sobre óxido de grafeno de nanopartículas de óxido de índio dopado com estanho (ITO).” 2011. Web. 28 Feb 2021.

Vancouver:

Firmiano EGdS. Síntese, caracterização e deposição sobre óxido de grafeno de nanopartículas de óxido de índio dopado com estanho (ITO). [Internet] [Thesis]. Universidade Federal de São Carlos; 2011. [cited 2021 Feb 28]. Available from: http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=6472.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Firmiano EGdS. Síntese, caracterização e deposição sobre óxido de grafeno de nanopartículas de óxido de índio dopado com estanho (ITO). [Thesis]. Universidade Federal de São Carlos; 2011. Available from: http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=6472

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Ottawa

12. Chiasson, Martin. An Imaging Mass Spectrometer with Ultrashort Laser Pulses as its Ionization Source .

Degree: 2016, University of Ottawa

URL: http://hdl.handle.net/10393/34343

► We have built an imaging mass spectrometer adapted for ultrashort laser pulses as its ionization technique, as an alternative to other imaging techniques. Before my… (more)

▼ We have built an imaging mass spectrometer adapted for ultrashort laser pulses as its ionization technique, as an alternative to other imaging techniques. Before my arrival, the mass spectrometer has only been subject to preliminary tests on noble gases. Since then, we’ve made some modifications to the system in order to properly analyze solids. This thesis shows how we obtain our ultrashort laser pulses, the inner workings of our homemade imaging mass spectrometer, and the results that we’ve obtained with it so far. We tested two modes of operation concerning the extraction of the ions from the system into the mass analyzer: continuous and pulsed. We discuss the advantages and disadvantages of each configuration. We also display preliminary imaging results with our imaging technique of a simple WO3 and ITO structure. We conclude by comparing the resolution of this image to the different techniques in imaging mass spectrometry, how we can further improve our mass spectrometer, and the future use of this machine. Nous avons construit un spectromètre de masse adapté pour les pulses de laser très courts comme technique d’ionisation, pour acquisition des images d’un échantillon. Avant je suis arrivé, le spectromètre de masse avait seulement été utilisé pour des tests préliminaires de gaz nobles. Depuis ce moment, nous avons modifié le système pour analyser les solides. Cette thèse démontre comment on obtient nos pulses de laser très courts, comment notre spectromètre fait maison fonctionne et les résultats nous avons obtenus jusqu’à présent. Nous avons testé deux configurations différentes au sujet de l’extraction des ions du système : constant et pulsé. Nous discutons aussi les avantages et désavantages de chaque mode d’opération. Nous démontrons aussi des images préliminaires d’un substrat mixte de WO3 et ITO. Nous concluons par comparer la résolution des images aux autres techniques de collection d’images, comment nous pouvons améliorer notre spectromètre de masse et les plans pour la machine dans le futur.

Subjects/Keywords: Mass Spectrometry; Ultrafast Optics; Imaging; Noble Gas; Indium Tin Oxide

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APA (6^th Edition):

Chiasson, M. (2016). An Imaging Mass Spectrometer with Ultrashort Laser Pulses as its Ionization Source . (Thesis). University of Ottawa. Retrieved from http://hdl.handle.net/10393/34343

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Chiasson, Martin. “An Imaging Mass Spectrometer with Ultrashort Laser Pulses as its Ionization Source .” 2016. Thesis, University of Ottawa. Accessed February 28, 2021. http://hdl.handle.net/10393/34343.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Chiasson, Martin. “An Imaging Mass Spectrometer with Ultrashort Laser Pulses as its Ionization Source .” 2016. Web. 28 Feb 2021.

Vancouver:

Chiasson M. An Imaging Mass Spectrometer with Ultrashort Laser Pulses as its Ionization Source . [Internet] [Thesis]. University of Ottawa; 2016. [cited 2021 Feb 28]. Available from: http://hdl.handle.net/10393/34343.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chiasson M. An Imaging Mass Spectrometer with Ultrashort Laser Pulses as its Ionization Source . [Thesis]. University of Ottawa; 2016. Available from: http://hdl.handle.net/10393/34343

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of New South Wales

13. Chockalingam, Muthukumar. Development of cell based biosensor with dual detection using electrochemical impedance spectroscopy and optical fluorescence microscopy.

Degree: Chemistry, 2012, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/52059 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10729/SOURCE01?view=true

► In a normal environment, cells are subject to multiple signals such as secretion of proteins from neighboring cells and biochemical interactions with the extracellular matrix… (more)

▼ In a normal environment, cells are subject to multiple signals such as secretion of proteins from neighboring cells and biochemical interactions with the extracellular matrix (ECM). Specifically, Arg-Gly-Asp-Cys (RGDC) ligands present in ECM has been known to bind to cellular integrins, thereby regulating cell adhesion and signaling pathways. Investigating the link between cell surface interactions and G-protein coupled receptor activation is crucial to understand cancer and various disease mechanisms. The dual electrochemical and optical investigation can provide comprehensive information about these networks as electrochemistry can monitor minute changes in morphologies as well as biochemical and ionic changes while optical microscopy has the potential to monitor specific cell signaling processes as well as morphologic changes. The aim of this work is two fold 1) present RGDC ligands on transparent Indium tin oxide (ITO) electrodes in a controlled manner and 2) monitor the G-protein coupled receptor (GPCR) activation signals on varied cell surface interactions using combined fluorescence microscopy and electrochemical impedance spectroscopy. To achieve this, 1) the surface were modified with phosphonate based self-assembled monolayers (SAMs) so that adhesion and electron transfer properties of the electrode is well controlled, 2) a mixture of cell adhesive GRGDC ligands and antifouling molecules were covalently coupled on top of the monolayer to control cell adhesion, 3) finally, simultaneous live cell fluorescence imaging and electrochemical impedance spectroscopy was conducted on the prepared surfaces to analyze GPCR activation (calcium signals) and their link with cell adhesion. The results showed stable and well packed phosphonohexadecanoic acid SAMs formed only on smooth amorphous ITO surfaces. Stochastic optical reconstruction (STORM) single molecular fluorescence imaging of ITO surfaces showed well distributed RGDC-Alexa Fluor 647 molecules on modified ITO surfaces. The cell adhesion and spreading was found maximum on 1:10³ (GRGDC:antifouling) surface and minimum on 1:10⁹ surfaces. The dual optical electrochemical investigations showed that GPCR activation of cells attached on 1:10⁶ and 1:10⁹ surfaces showed large increase in impedance (morphological changes) whereas 1:10³ and fibronectin coated surfaces showed maximum calcium signals. This dual investigations allow comprehensive understanding of cell signaling processes, fluorescence microscopy provides minute changes in calcium flux, while impedance spectroscopy providing information about minute changes in morphologies. Advisors/Committee Members: Gooding, Justin, Chemistry, Faculty of Science, UNSW, Gaus, Katharina, Centre for Vascular Research, Faculty of Medicine, UNSW.

Subjects/Keywords: Dual electrochemical optical; Cell based biosensors; Indium tin oxide

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APA (6^th Edition):

Chockalingam, M. (2012). Development of cell based biosensor with dual detection using electrochemical impedance spectroscopy and optical fluorescence microscopy. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/52059 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10729/SOURCE01?view=true

Chicago Manual of Style (16^th Edition):

Chockalingam, Muthukumar. “Development of cell based biosensor with dual detection using electrochemical impedance spectroscopy and optical fluorescence microscopy.” 2012. Doctoral Dissertation, University of New South Wales. Accessed February 28, 2021. http://handle.unsw.edu.au/1959.4/52059 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10729/SOURCE01?view=true.

MLA Handbook (7^th Edition):

Chockalingam, Muthukumar. “Development of cell based biosensor with dual detection using electrochemical impedance spectroscopy and optical fluorescence microscopy.” 2012. Web. 28 Feb 2021.

Vancouver:

Chockalingam M. Development of cell based biosensor with dual detection using electrochemical impedance spectroscopy and optical fluorescence microscopy. [Internet] [Doctoral dissertation]. University of New South Wales; 2012. [cited 2021 Feb 28]. Available from: http://handle.unsw.edu.au/1959.4/52059 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10729/SOURCE01?view=true.

Council of Science Editors:

Chockalingam M. Development of cell based biosensor with dual detection using electrochemical impedance spectroscopy and optical fluorescence microscopy. [Doctoral Dissertation]. University of New South Wales; 2012. Available from: http://handle.unsw.edu.au/1959.4/52059 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10729/SOURCE01?view=true

University of Texas – Austin

14. Staller, Corey Michael. Electron transport in doped semiconductor nanocrystals.

Degree: PhD, Chemical Engineering, 2019, University of Texas – Austin

URL: http://dx.doi.org/10.26153/tsw/1487

► Electron transport through semiconductor nanocrystal (NC) systems is almost entirely understood by analogs to bulk science. The physics governing electron transport within NCs is entirely… (more)

Subjects/Keywords: Conduction; Nanocrystals; Tin-doped indium oxide; Depletion; Metal-insulator transition

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APA (6^th Edition):

Staller, C. M. (2019). Electron transport in doped semiconductor nanocrystals. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/1487

Chicago Manual of Style (16^th Edition):

Staller, Corey Michael. “Electron transport in doped semiconductor nanocrystals.” 2019. Doctoral Dissertation, University of Texas – Austin. Accessed February 28, 2021. http://dx.doi.org/10.26153/tsw/1487.

MLA Handbook (7^th Edition):

Staller, Corey Michael. “Electron transport in doped semiconductor nanocrystals.” 2019. Web. 28 Feb 2021.

Vancouver:

Staller CM. Electron transport in doped semiconductor nanocrystals. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2019. [cited 2021 Feb 28]. Available from: http://dx.doi.org/10.26153/tsw/1487.

Council of Science Editors:

Staller CM. Electron transport in doped semiconductor nanocrystals. [Doctoral Dissertation]. University of Texas – Austin; 2019. Available from: http://dx.doi.org/10.26153/tsw/1487

Mahatma Gandhi University

15. Raghupathi, P S. Studies on the physical properties of indium oxide tin oxide and indium tin oxide thin films.

Degree: 2010, Mahatma Gandhi University

URL: http://shodhganga.inflibnet.ac.in/handle/10603/508

Subjects/Keywords: Indium oxide; Tin oxide; Tin oxide thin films

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APA (6^th Edition):

Raghupathi, P. S. (2010). Studies on the physical properties of indium oxide tin oxide and indium tin oxide thin films. (Thesis). Mahatma Gandhi University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/508

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Raghupathi, P S. “Studies on the physical properties of indium oxide tin oxide and indium tin oxide thin films.” 2010. Thesis, Mahatma Gandhi University. Accessed February 28, 2021. http://shodhganga.inflibnet.ac.in/handle/10603/508.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Raghupathi, P S. “Studies on the physical properties of indium oxide tin oxide and indium tin oxide thin films.” 2010. Web. 28 Feb 2021.

Vancouver:

Raghupathi PS. Studies on the physical properties of indium oxide tin oxide and indium tin oxide thin films. [Internet] [Thesis]. Mahatma Gandhi University; 2010. [cited 2021 Feb 28]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/508.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Raghupathi PS. Studies on the physical properties of indium oxide tin oxide and indium tin oxide thin films. [Thesis]. Mahatma Gandhi University; 2010. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/508

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of California – Berkeley

16. Garcia, Guillermo. Near-Infrared Selective Plasmonic Electrochromic Windows.

Degree: Mechanical Engineering, 2012, University of California – Berkeley

URL: http://www.escholarship.org/uc/item/90z590sd

► Residential and commercial buildings represent a prime opportunity to improve energy efficiency and sustainability worldwide. Currently, lighting and thermal management within buildings account for 20%… (more)

▼ Residential and commercial buildings represent a prime opportunity to improve energy efficiency and sustainability worldwide. Currently, lighting and thermal management within buildings account for 20% of the United State's yearly energy consumption. Several approaches, such as solid state lighting, energy efficient HVAC systems, and improved insulation, are currently being investigated to help mitigate building energy consumption. The work described in this dissertation focuses on studying the use of dynamic window coatings on commercial and residential buildings. Specifically, this work focuses on near infrared selective electrochromic window coatings that optimize the amount of solar heat that enters a building without affecting the amount of solar light. Electrochromic window coatings are based on an electrochemical cell architecture that is composed of two electrochromic layers separated by ion conducting electrolyte. During operation, an applied bias is used to control the optical properties of both electrochromic layers by shuffling a small amount of current between the counter and working electrode. In a negative bias, the window coatings dim to a dark state. If you reverse the bias, the window coatings go back to a transparent state. Intermediate states can be achieved by controlling the value of the bias applied. Unfortunately, traditional electrochromic windows require a change in visible transmittance to gain energy savings within buildings. This change affects the amount of solar daylighting and inadvertently leads to an increase in electrical lighting during the day. This work focuses on developing a nanocrystal based plasmonic electrochromic window that only modulates the near infrared portion of light while remaining visibly transparent. Taking advantage of localized surface plasmon absorption, this work approaches dynamic window coatings in a new fashion. To date, no near infrared selective electrochromic windows exist in the literature. To achieve near infrared selective modulation, thin film layers of tin doped indium oxide (ITO) and alumnium doped zinc oxide (AZO) nanocrystal films were investigated as a potential electrochromic layers. A colloidal synthetic technique was used to generate concentrated inks of both ITO and AZO nanocrystals. Thin films of ITO and AZO nanocrystals where fabricated via spin casting and tested in electrochemical half cells. Prior to testing, extensive post processing techniques were investigated to develop transparent conductive films. During optimization, variations in nanocrystal size, layer thickness, dopant concentration and electrolyte were studied. For an optimized ITO film, 35% solar near infrared modulation was achieved while maintaining less than 6% modulation in solar insolation visible to the human eye. Optimized AZO nanocrystal films achieved 42% solar near infrared modulation with no change in solar insolation visible to the human eye. Extensive models where built to elucidate the physical mechanism used to achieve this solar modulation. Computer…

Subjects/Keywords: Nanotechnology; Energy; Materials Science; Aluminum Zinc Oxide; Electrochromic; Indium Tin Oxide; nanocrystal; Plasmonic; spectroelectrochemistry

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APA (6^th Edition):

Garcia, G. (2012). Near-Infrared Selective Plasmonic Electrochromic Windows. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/90z590sd

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Garcia, Guillermo. “Near-Infrared Selective Plasmonic Electrochromic Windows.” 2012. Thesis, University of California – Berkeley. Accessed February 28, 2021. http://www.escholarship.org/uc/item/90z590sd.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Garcia, Guillermo. “Near-Infrared Selective Plasmonic Electrochromic Windows.” 2012. Web. 28 Feb 2021.

Vancouver:

Garcia G. Near-Infrared Selective Plasmonic Electrochromic Windows. [Internet] [Thesis]. University of California – Berkeley; 2012. [cited 2021 Feb 28]. Available from: http://www.escholarship.org/uc/item/90z590sd.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Garcia G. Near-Infrared Selective Plasmonic Electrochromic Windows. [Thesis]. University of California – Berkeley; 2012. Available from: http://www.escholarship.org/uc/item/90z590sd

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Arizona

17. MacDonald, Gordon Alex. Nanoscale Characterization of the Electrical Properties of Oxide Electrodes at the Organic Semiconductor-Oxide Electrode Interface in Organic Solar Cells .

Degree: 2015, University of Arizona

URL: http://hdl.handle.net/10150/347338

► This dissertation focuses on characterizing the nanoscale and surface averaged electrical properties of transparent conducting oxide (TCO) electrodes such as indium tin oxide (ITO) and… (more)

▼ This dissertation focuses on characterizing the nanoscale and surface averaged electrical properties of transparent conducting oxide (TCO) electrodes such as indium tin oxide (ITO) and transparent metal-oxide (MO) electron selective interlayers (ESLs), such as zinc oxide (ZnO), the ability of these materials to rapidly extract photogenerated charges from organic semiconductors (OSCs) used in organic photovoltaic (OPV) cells, and evaluating their impact on the power conversion efficiency (PCE) of OPV devices. In Chapter 1, we will introduce the fundamental principles regarding the need for low cost power generation, the benefits of OPV technologies, as well as the key principles that govern the operation of OPV devices and the key innovations that have advanced this technology. In Chapter 2 of this dissertation, we demonstrate an innovative application of conductive probe atomic force microscopy (CAFM) to map the nanoscale electrical heterogeneity at the interface between an electrode, such as ITO, and an OSC such as the p-type OSC copper phthalocyanine (CuPc).(MacDonald et al. (2012) ACS Nano, 6, p. 9623) In this work we collected arrays of J-V curves, using a CAFM probe as the top contact of CuPc/ITO systems, to map the local J-V responses. By comparing J-V responses to known models for charge transport, we were able to determine if the local rate-limiting step for charge transport is through the OSC (ohmic) or the CuPc/ITO interface (nonohmic). These results strongly correlate with device PCE, as demonstrated through the controlled addition of insulating alkylphosphonic acid self-assembled monolayers (SAMs) at the ITO/CuPc interface. Subsequent chapters focus on the electrical property characterization of RF-magnetron sputtered ZnO (sp-ZnO) ESL films on ITO substrates. We have shown that the energetic alignment of ESLs and the organic semiconducting (OSC) active materials plays a critical role in determining the PCE of OPV devices and the appearance of, or lack thereof, UV light soaking sensitivity. For ZnO and fullerene interfaces, we have shown that either minimizing the oxygen partial pressure during ZnO deposition or exposure of ZnO to UV light minimizes the energetic offset at this interface and maximizes device PCE. We have used a combination of device testing, device modeling, and impedance spectroscopy to fully characterize the effects that energetic alignment has on the charge carrier transport and charge carrier distribution within the OPV device. This work can be found in Chapter 3 of this dissertation and is in preparation for publication. We have also shown that the local properties of sp-ZnO films varies as a function of the underlying ITO crystal face. We show that the local ITO crystal face determines the local nucleation and growth of the sp-ZnO films. We demonstrate that this effects the morphology, the chemical resistance to etching as well as the surface electrical properties of the sp-ZnO films. This is likely due to differences in the surface mobility of sputtered Zn and O atoms on these… Advisors/Committee Members: Armstrong, Neal R (advisor), Armstrong, Neal R. (committeemember), Pemberton, Jeanne E. (committeemember), Saavedra, S. Scott (committeemember), Monti, Oliver L.A. (committeemember), Loy, Douglas A. (committeemember).

Subjects/Keywords: Indium Tin Oxide; Nanoscale; Organic Photovoltaic; Solar cell; Zinc Oxide; AFM; Chemistry

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APA (6^th Edition):

MacDonald, G. A. (2015). Nanoscale Characterization of the Electrical Properties of Oxide Electrodes at the Organic Semiconductor-Oxide Electrode Interface in Organic Solar Cells . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/347338

Chicago Manual of Style (16^th Edition):

MacDonald, Gordon Alex. “Nanoscale Characterization of the Electrical Properties of Oxide Electrodes at the Organic Semiconductor-Oxide Electrode Interface in Organic Solar Cells .” 2015. Doctoral Dissertation, University of Arizona. Accessed February 28, 2021. http://hdl.handle.net/10150/347338.

MLA Handbook (7^th Edition):

MacDonald, Gordon Alex. “Nanoscale Characterization of the Electrical Properties of Oxide Electrodes at the Organic Semiconductor-Oxide Electrode Interface in Organic Solar Cells .” 2015. Web. 28 Feb 2021.

Vancouver:

MacDonald GA. Nanoscale Characterization of the Electrical Properties of Oxide Electrodes at the Organic Semiconductor-Oxide Electrode Interface in Organic Solar Cells . [Internet] [Doctoral dissertation]. University of Arizona; 2015. [cited 2021 Feb 28]. Available from: http://hdl.handle.net/10150/347338.

Council of Science Editors:

MacDonald GA. Nanoscale Characterization of the Electrical Properties of Oxide Electrodes at the Organic Semiconductor-Oxide Electrode Interface in Organic Solar Cells . [Doctoral Dissertation]. University of Arizona; 2015. Available from: http://hdl.handle.net/10150/347338

University of Texas – Austin

18. -5293-9747. Effect of dopant level on environmental behavior of doped nanoparticles : a case study of indium tin oxide.

Degree: PhD, Civil Engineering, 2019, University of Texas – Austin

URL: http://dx.doi.org/10.26153/tsw/1070

► Novel engineered nanomaterials (ENMs) continue to be synthesized and adopted for commercial and industrial applications. Currently, the classes of ENMs utilized most in consumer products… (more)

▼ Novel engineered nanomaterials (ENMs) continue to be synthesized and adopted for commercial and industrial applications. Currently, the classes of ENMs utilized most in consumer products are metal oxides, metals, and carbonaceous materials. An emerging subset of metal oxide ENMs with potential in many applications are doped metal oxides, which are binary metal oxides (MO [subscript x] ) with some amount of another element, metal or non metal, inserted into the crystal lattice. This research focused on the environmental fate and transport of a major doped metal oxide, indium tin oxide (ITO), that is currently widely produced for applications in electronics. Specifically, this dissertation investigated the particle stability, solubility, and production of reactive oxygen species (ROS) by ITO nanoparticles in aqueous systems. The stability of ITO particles in electrolyte solutions and the effect of Sn level was investigated in a series of homoaggregation studies. In order to better compare colloidal stability, a novel method, called the TAA-logistic method, for estimating the critical coagulation concentration (CCC) from dynamic light scattering data was developed and tested with experimental and literature data. Using the new method, particle aggregation kinetics were compared for a range of solution conditions including pH, electrolyte valency, ionic strength, and presence of natural organic matter (NOM). Aggregation kinetics were determined for a set of synthesized particles coated with PAA-PEO polymer and for a set of bare, commercially-obtained particles. Aggregation experiments indicated inclusion of Sn in In₂O₃ decreased the aqueous stability of the nanoparticle, largely due to decreases in the magnitude of surface charge. However, the surface charge and aqueous stability did not always trend linearly with Sn content, indicating other factors, such as the distribution of Sn within the ITO crystal, were also important. Lastly, Suwannee River aquatic natural organic matter (NOM) significantly increased the aqueous stability of ITO nanoparticles through charge reversal and electrostatic stabilization. Dissolution of ITO in dilute, inert electrolyte was studied in batch and flowthrough experiments. Slow dissolution kinetics were shown in both experimental con- figurations. Sn was not appreciably leached from ITO at either pH = 4 or pH = 6. Inclusion of Sn appeared to reduce In solubility relative to In₂O₃ at pH = 6 but increased In leaching at pH = 4. The discrepancy between dissolution behavior at the two pH values relative to the In₂O₃ end-member indicated more complex solubility than explained by simple ideal solid solution aqueous solution behavior. Lastly, the electronic band structure of ITO was determined for multiple levels of Sn using ultraviolet photoelectron spectroscopy and UV-vis diffuse reflectance spectroscopy. Inclusion of tin resulted in an increase of the optical band gap and a shift of the conduction band minimum, Fermi level, and valence band maximum to more oxidizing potentials relative to… Advisors/Committee Members: Katz, Lynn Ellen (advisor), Saleh, Navid B (committee member), Kirisits, Mary Jo (committee member), Milliron, Delia J (committee member), Lawler, Desmond F (committee member), Reible, Danny D (committee member).

Subjects/Keywords: Indium tin oxide; Environmental fate and transport; Homoaggregation; Critical coagulation concentration; Doped metal oxide

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APA (6^th Edition):

-5293-9747. (2019). Effect of dopant level on environmental behavior of doped nanoparticles : a case study of indium tin oxide. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/1070

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16^th Edition):

-5293-9747. “Effect of dopant level on environmental behavior of doped nanoparticles : a case study of indium tin oxide.” 2019. Doctoral Dissertation, University of Texas – Austin. Accessed February 28, 2021. http://dx.doi.org/10.26153/tsw/1070.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7^th Edition):

-5293-9747. “Effect of dopant level on environmental behavior of doped nanoparticles : a case study of indium tin oxide.” 2019. Web. 28 Feb 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-5293-9747. Effect of dopant level on environmental behavior of doped nanoparticles : a case study of indium tin oxide. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2019. [cited 2021 Feb 28]. Available from: http://dx.doi.org/10.26153/tsw/1070.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-5293-9747. Effect of dopant level on environmental behavior of doped nanoparticles : a case study of indium tin oxide. [Doctoral Dissertation]. University of Texas – Austin; 2019. Available from: http://dx.doi.org/10.26153/tsw/1070

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Hong Kong University of Science and Technology

19. Feng, Zhuoqun ECE. Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT.

Degree: 2018, Hong Kong University of Science and Technology

URL: http://repository.ust.hk/ir/Record/1783.1-97195 ; https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html

► With their relatively low process temperature, high field-effect mobility, low leakage current and high transparency, thin-film transistors (TFTs) based on metal oxide (MO), especially indium-gallium-zinc… (more)

Subjects/Keywords: Thin film transistors ; Indium gallium zinc oxide ; Metal oxide semiconductors ; Electrodes

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APA (6^th Edition):

Feng, Z. E. (2018). Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-97195 ; https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Feng, Zhuoqun ECE. “Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed February 28, 2021. http://repository.ust.hk/ir/Record/1783.1-97195 ; https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Feng, Zhuoqun ECE. “Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT.” 2018. Web. 28 Feb 2021.

Vancouver:

Feng ZE. Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2021 Feb 28]. Available from: http://repository.ust.hk/ir/Record/1783.1-97195 ; https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Feng ZE. Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: http://repository.ust.hk/ir/Record/1783.1-97195 ; https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

20. Huang, Kuan-Chi. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.

Degree: Master, Physics, 2014, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

► In order to clarify the mechanism of reset process in Ti/HfO2/TiN resistive random access memory (RRAM) devices, constant voltage sampling measurements are carried out at… (more)

Subjects/Keywords: complementary resistive switches; indium tin oxide; activation energy; hafnium; resistive random access memory

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APA (6^th Edition):

Huang, K. (2014). Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Thesis, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Web. 28 Feb 2021.

Vancouver:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Internet] [Thesis]. NSYSU; 2014. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

21. Tai, Hui-Wen. Aging of ITO Anodes of Organic Light-Emitting Diodes Treated by Supercritical CO2/H2O2 Fluids.

Degree: Master, Electro-Optical Engineering, 2014, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515114-231530

► The aim of this dissertation was to investigate the aging of indium tin oxide (ITO) anodes of organic light-emitting diodes (OLED) treated by supercritical CO2… (more)

Subjects/Keywords: supercritical fluid; organic light-emitting diode; indium tin oxide; work function; surface energy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Tai, H. (2014). Aging of ITO Anodes of Organic Light-Emitting Diodes Treated by Supercritical CO2/H2O2 Fluids. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515114-231530

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Tai, Hui-Wen. “Aging of ITO Anodes of Organic Light-Emitting Diodes Treated by Supercritical CO2/H2O2 Fluids.” 2014. Thesis, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515114-231530.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Tai, Hui-Wen. “Aging of ITO Anodes of Organic Light-Emitting Diodes Treated by Supercritical CO2/H2O2 Fluids.” 2014. Web. 28 Feb 2021.

Vancouver:

Tai H. Aging of ITO Anodes of Organic Light-Emitting Diodes Treated by Supercritical CO2/H2O2 Fluids. [Internet] [Thesis]. NSYSU; 2014. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515114-231530.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tai H. Aging of ITO Anodes of Organic Light-Emitting Diodes Treated by Supercritical CO2/H2O2 Fluids. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515114-231530

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

22. Gao, Yu-Jie. Developing liquid crystal tunable filters with ITO Distributed Bragg reflectors.

Degree: Master, Electro-Optical Engineering, 2014, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0525114-155656

► In this study, conductive distributed Bragg reflectors (DBRs) on glass substrates based on dense ITO(Indium tin oxide) and porous ITO bilayers were proposed as a… (more)

Subjects/Keywords: Fabry-Perot cavity; supercritical CO2; Distributed Bragg reflectors; liquid crystal; porous; Indium tin oxide

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Gao, Y. (2014). Developing liquid crystal tunable filters with ITO Distributed Bragg reflectors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0525114-155656

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Gao, Yu-Jie. “Developing liquid crystal tunable filters with ITO Distributed Bragg reflectors.” 2014. Thesis, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0525114-155656.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Gao, Yu-Jie. “Developing liquid crystal tunable filters with ITO Distributed Bragg reflectors.” 2014. Web. 28 Feb 2021.

Vancouver:

Gao Y. Developing liquid crystal tunable filters with ITO Distributed Bragg reflectors. [Internet] [Thesis]. NSYSU; 2014. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0525114-155656.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gao Y. Developing liquid crystal tunable filters with ITO Distributed Bragg reflectors. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0525114-155656

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

23. Chuang, Tung-Lin. ITO distributed Bragg reflectors for resonant cavity OLED.

Degree: Master, Electro-Optical Engineering, 2012, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628112-130754

► In the study, conductive distributed Bragg reflectors (DBRs) fabricated at room temperature based on porous indium tin oxide (ITO) on dense ITO bilayers were proposed… (more)

Subjects/Keywords: resonant cavity; organic light emitting diodes; Indium tin oxide; porous; supercritical CO2; distributed Bragg reflectors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Chuang, T. (2012). ITO distributed Bragg reflectors for resonant cavity OLED. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628112-130754

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Chuang, Tung-Lin. “ITO distributed Bragg reflectors for resonant cavity OLED.” 2012. Thesis, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628112-130754.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Chuang, Tung-Lin. “ITO distributed Bragg reflectors for resonant cavity OLED.” 2012. Web. 28 Feb 2021.

Vancouver:

Chuang T. ITO distributed Bragg reflectors for resonant cavity OLED. [Internet] [Thesis]. NSYSU; 2012. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628112-130754.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chuang T. ITO distributed Bragg reflectors for resonant cavity OLED. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628112-130754

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

24. Tseng, Yu-wen. ITO Distributed Bragg Reflectors on Glass and Flexible Substrates for Microcavity Organic Light Emitting Diodes.

Degree: Master, Electro-Optical Engineering, 2015, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515115-114317

► In this study, microcavity organic light-emitting diodes (MOLEDs) with conductive distributed Bragg reflectors (DBRs) were demonstrated. The conductive DBRs were fabricated by stacking the porous… (more)

Subjects/Keywords: distributed Bragg reflectors; supercritical CO2; microcavity; organic light emitting diode; Indium tin oxide

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Tseng, Y. (2015). ITO Distributed Bragg Reflectors on Glass and Flexible Substrates for Microcavity Organic Light Emitting Diodes. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515115-114317

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Tseng, Yu-wen. “ITO Distributed Bragg Reflectors on Glass and Flexible Substrates for Microcavity Organic Light Emitting Diodes.” 2015. Thesis, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515115-114317.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Tseng, Yu-wen. “ITO Distributed Bragg Reflectors on Glass and Flexible Substrates for Microcavity Organic Light Emitting Diodes.” 2015. Web. 28 Feb 2021.

Vancouver:

Tseng Y. ITO Distributed Bragg Reflectors on Glass and Flexible Substrates for Microcavity Organic Light Emitting Diodes. [Internet] [Thesis]. NSYSU; 2015. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515115-114317.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tseng Y. ITO Distributed Bragg Reflectors on Glass and Flexible Substrates for Microcavity Organic Light Emitting Diodes. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0515115-114317

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

25. Leng, Shan. The effect of thermal annealing on electrical properties of ITO.

Degree: Master, Physics, 2015, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629115-222434

► This thesis studies the temperature dependence of resistance and uses the Seebeck effect to obtain the carrier concentration in the indium tin oxide (ITO) films… (more)

Subjects/Keywords: thermopower; XPS; carrier concentration; Bloch-GrÃ¼neisen function; resistance; indium tin oxide; anneal

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Leng, S. (2015). The effect of thermal annealing on electrical properties of ITO. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629115-222434

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Leng, Shan. “The effect of thermal annealing on electrical properties of ITO.” 2015. Thesis, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629115-222434.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Leng, Shan. “The effect of thermal annealing on electrical properties of ITO.” 2015. Web. 28 Feb 2021.

Vancouver:

Leng S. The effect of thermal annealing on electrical properties of ITO. [Internet] [Thesis]. NSYSU; 2015. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629115-222434.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Leng S. The effect of thermal annealing on electrical properties of ITO. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629115-222434

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Rochester Institute of Technology

26. Zhou, Jianming. Indium tin oxide (ITO) deposition, patterning and Schottky contact fabrication.

Degree: Microelectronic Engineering, 2006, Rochester Institute of Technology

URL: https://scholarworks.rit.edu/theses/7141

► As a transparent conductive material, indium tin oxide (ITO) has been utilized as electrodes in liquid crystal displays, solar cells, heat reflecting films and… (more)

▼ As a transparent conductive material, indium tin oxide (ITO) has been utilized as electrodes in liquid crystal displays, solar cells, heat reflecting films and gas sensors. In general, the desired properties are high conductance and transmission. However, due to the complexity of ITO, the film properties strongly depend on the deposition processes. In this study, the deposition conditions for ITO film were optimized to get both high conductivity and transmission. The emphasis was on investigating the effects of various deposition parameters, such as oxygen partial pressure, total gas flow, annealing conditions and power. These are the most critical parameters for ITO deposition. A mathematical model to describe the material properties as functions of these parameters for a CVC model 601 Sputterer was developed utilizing JMP IN software. Films with resistivity 3x10-4â„¦-cm and transmittance above 90% were achieved on glass and silicon substrates with 20 hours of annealing. The processing window (power: 120-150W, oxygen ratio: 6-10%) is, to the authorâ€™s knowledge, the largest reported by literature. However, the ITO film properties (electrical and optical) variation between runs needs to be further reduced. Patterning of ITO was also investigated. High but controllable etch rates are desired. Both wet and dry etch processes were developed. The etch rate of 48nm/min was achieved by using HCL aqueous solution (4:1 HCl to DI water volumetric ratio, where HCl is the standard 37% HCl solution) with almost infinite selectivity between the ITO film and the photoresisit. For dry etch, the etch rate is 1nm/min with just argon as the working gas and the etching selectivity between the photoresist and the ITO film is 13.02. To etch 100nm ITO film, the photoresist needs to be at least 1.5um to serve as etching mask. This dry etch process still needs to be improved. A Schottky contact was successfully fabricated by using ITO as the metal. The electrical barrier height was calculated to be 1.01eV. The current-voltage characteristics were investigated as well. Advisors/Committee Members: Ewbank, Dale.

Subjects/Keywords: Indium tin oxide; Schottky contact; Sputtering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Zhou, J. (2006). Indium tin oxide (ITO) deposition, patterning and Schottky contact fabrication. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/7141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Zhou, Jianming. “Indium tin oxide (ITO) deposition, patterning and Schottky contact fabrication.” 2006. Thesis, Rochester Institute of Technology. Accessed February 28, 2021. https://scholarworks.rit.edu/theses/7141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Zhou, Jianming. “Indium tin oxide (ITO) deposition, patterning and Schottky contact fabrication.” 2006. Web. 28 Feb 2021.

Vancouver:

Zhou J. Indium tin oxide (ITO) deposition, patterning and Schottky contact fabrication. [Internet] [Thesis]. Rochester Institute of Technology; 2006. [cited 2021 Feb 28]. Available from: https://scholarworks.rit.edu/theses/7141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhou J. Indium tin oxide (ITO) deposition, patterning and Schottky contact fabrication. [Thesis]. Rochester Institute of Technology; 2006. Available from: https://scholarworks.rit.edu/theses/7141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

27. Pan, Chih-Hung. Study on Resistive Switching Mechanism of Oxide-based RRAM Device.

Degree: PhD, Materials and Optoelectronic Science, 2017, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624117-135118

► With the continuous advancement of technology, applications in the Internet of things (IoT) will become widespread, and even integrated to many peopleâs daily lives. According… (more)

▼ With the continuous advancement of technology, applications in the Internet of things (IoT) will become widespread, and even integrated to many peopleâs daily lives. According to predictions, by 2020, global IoT nodes will expand to 28 billion, indicating the importance of IoT in the commercial markets and its potential future development. This development will be dominated by the evolution of memory devices, and among the next-generation memory devices, resistive random access memory (RRAM) has the most potential to become the mainstream next-generation memory due to its advantages of low power-consumption and high performance. However, a major obstacle is the non-uniform physical mechanism in its resistance switching process. Therefore, the key factor in putting RRAM into mass production is to clarify the switching physical mechanism. The resistive switching process includes the set and reset processes. In the set process, the distribution of the set voltage is one of the most important issue which hinders the mass production of RRAM, and the reason for this voltage distribution is considered to be highly related to the resistance distribution of HRS. This is the first time analyzing the phenomenon using the interface effect, and we determine that the reason is the different degrees of oxidation of the switching layer, which is caused by an incomplete reaction of oxygen ions. In this article, an additional oxygen reservoir is also built by plasma treatment to inhibit the distribution situation. During the reset process, when the series resistance value is close to the LRS resistance value, voltage positive feedback effect occurs in the process, causing the reset process to end in a very short period of time. In addition, this is the first study which finds that the degree of reset is dominated by the effective electrical field region rather than the energy consumed, and a supportive physical model is established by an electrical field simulation. Further, a high efficiency, energy-saving operation method is also proposed in this research. In terms of the device material, ITO is proposed to act as the device electrode, and exhibits outstanding performance, reliability, and a self-compliance characteristic. Moreover, the concentration gradient of oxygen ions is considered to be one of the driving forces of the resistance switching process, and a model is also proposed for explanation of the mechanism. Advisors/Committee Members: Wei-Hung Su (chair), Kuo-Ching Huang (chair), Tsung-Ming Tsai (committee member), Jeng-Tzong Sheu (chair), Ting-Chang Chang (chair).

Subjects/Keywords: Resistance Random Access Memory; Resistance Switching Mechanism; Series Resistance; Indium Tin Oxide; Electrical Field Simulation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Pan, C. (2017). Study on Resistive Switching Mechanism of Oxide-based RRAM Device. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624117-135118

Chicago Manual of Style (16^th Edition):

Pan, Chih-Hung. “Study on Resistive Switching Mechanism of Oxide-based RRAM Device.” 2017. Doctoral Dissertation, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624117-135118.

MLA Handbook (7^th Edition):

Pan, Chih-Hung. “Study on Resistive Switching Mechanism of Oxide-based RRAM Device.” 2017. Web. 28 Feb 2021.

Vancouver:

Pan C. Study on Resistive Switching Mechanism of Oxide-based RRAM Device. [Internet] [Doctoral dissertation]. NSYSU; 2017. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624117-135118.

Council of Science Editors:

Pan C. Study on Resistive Switching Mechanism of Oxide-based RRAM Device. [Doctoral Dissertation]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0624117-135118

NSYSU

28. Chen, Po-Hsun. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.

Degree: PhD, Physics, 2018, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038

► With the advent of advanced technologies such as the Internet of Things (IoT), artificial intelligence (AI), and cloud computing, huge amounts of data are continuously… (more)

▼ With the advent of advanced technologies such as the Internet of Things (IoT), artificial intelligence (AI), and cloud computing, huge amounts of data are continuously produced. The demand for memory, therefore, is dramatically increasing. Traditional flash memory currently faces severe challenges when device size shrinks. A thin tunneling oxide layer may cause severe leakage path issues, resulting in degradation of data retention and component reliability. Therefore, it is imperative to develop a new generation of memory. Among next generation memories, the resistive random access memory (RRAM) has the advantages of being simple metal-insulator-metal structure, as well as having low power consumption and high operation performance, factors which are important in becoming a building block for the new generation of memory devices. In this thesis, we applied an indium tin oxide (ITO) thin film as the electrode in a HfO2-based RRAM to investigate its resistance switching (RS) characteristics. The experimental results show that, compared to a traditional inert metal electrode, the ITO electrode has robust RS characteristics and better reliability. Both lower operating current and faster operating speed can be achieved simultaneously. On the basis of electrical measurements, we conclude that the oxygen ions can enter the ITO electrode by the given electric field, thus forming a semiconductor-like ITO region. This also causes the effects of a self-compliance current and low power consumption. In addition, due to the bulk oxygen-ion storage in the ITO electrode, the device exhibits better RS performance. Since the transition element has a semi-full electron orbital region, it easily forms bonds with oxygen ions. We, therefore, doped gadolinium (Gd) into the ITO electrode as a ITO:Gd combination to examine the RS mechanism in the HO2-based RRAM. The experimental results show that the ITO:Gd device can produce a high memory window at a low operating current. By means of the current fitting method and a temperature effect experiment, we are able to confirm that a modification in the conducting mechanism has occurred, from the Ohmic conducting mechanism in the pure ITO electrode to Schottky emission in the ITO:Gd electrode. We conclude that the ITO:Gd electrode has better bonding ability with oxygen ions due to the Gd doping, which in turn allows the ITO:Gd device to have better resistance switching characteristics. Since the ITO material also possesses semiconductor characteristics, we have also attempted co-sputtering the ITO thin film with nitrogen gas as the ITON thin film to act as the insulator layer of RRAM, thereby further simplifying the device fabrication process. Experimental results shown that the ITON thin film can also induce RS characteristics. In addition, a lower operating voltage can be achieved with only Â±3 volts to complete the forming, set, and reset operations. Apart from this gas co-sputtering method, we also introduced an oxygen plasma treatment to oxidize the ITO thin film as the insulator in the RRAM.… Advisors/Committee Members: Tsung-Ming Tsai (chair), Ann-Kuo Chu (chair), Ikai Lo (chair), Jeng-Tzong Sheu (chair), Ting-Chang Chang (committee member).

Subjects/Keywords: Resistance Switching (RS); Indium Tin Oxide (ITO); Resistive Random Access Memory (RRAM); Hafnium Dioxide (HfO2)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Chen, P. (2018). Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038

Chicago Manual of Style (16^th Edition):

Chen, Po-Hsun. “Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.” 2018. Doctoral Dissertation, NSYSU. Accessed February 28, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038.

MLA Handbook (7^th Edition):

Chen, Po-Hsun. “Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.” 2018. Web. 28 Feb 2021.

Vancouver:

Chen P. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. [Internet] [Doctoral dissertation]. NSYSU; 2018. [cited 2021 Feb 28]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038.

Council of Science Editors:

Chen P. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. [Doctoral Dissertation]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038

University of Illinois – Chicago

29. Park, Jin Hwan. Fabrication and Characterization of Single Crystal CdTe Solar Cells.

Degree: 2014, University of Illinois – Chicago

URL: http://hdl.handle.net/10027/19108

► CdTe as one of the II-VI semiconductors has become attractive over the last few decades as a result of commercial applications in thin-film solar photovoltaic… (more)

▼ CdTe as one of the II-VI semiconductors has become attractive over the last few decades as a result of commercial applications in thin-film solar photovoltaic technology. Although the current record CdTe solar cell efficiency is above 20%, it is still much lower than the maximum single junction theoretical efficiency of approximately 30%. Moreover, the impressive recent efficiency gains are mainly attributed to the short circuit current and fill-factor. Thus, improving open circuit voltage is required in order to achieve the high efficiency CdTe-based solar cells. Here, I will present fabrication and characterization of single crystal CdTe-based II-VI solar cells grown by molecular beam epitaxy (MBE) on Si substrates. I will begin by discussing my results related to material properties of indium tin oxide (ITO), arsenic-doped CdTe, and indium-doped CdTe. The results show that (a) temperature and doping are critical factors for both electrical and optical properties of ITO thin films as front contact materials of single crystal CdTe solar cells, (b) p-type carrier density greater than 10¹⁶ cm^-3 can be achieved using arsenic acceptors in CdTe films, and (c) n-type carrier density close to 10¹⁸ cm^-3 can be achieved using indium donors in CdTe films. Finally, I will present my studies of single crystal CdTe solar cell fabrication and performance based on the knowledge obtained from the material properties of ITO, arsenic-doped CdTe, and indium-doped CdTe. Relatively poor crystal quality of arsenic-doped absorber CdTe layers and indium diffusion issues during device fabrications are found to be correlated with the lower open circuit voltage and efficiency. Possible means of achieving high open circuit voltage will be discussed for future work. Advisors/Committee Members: Sivananthan, Sivalingam (advisor), Grein, Christoph (committee member), Klie, Robert (committee member), Kodama, Richard (committee member), Gessert, Timothy (committee member), Dhere, Ramesh (committee member).

Subjects/Keywords: Solar cell; single crystal; CdTe; Indium Tin Oxide; Molecular Beam Epitaxy; RF Sputtering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Park, J. H. (2014). Fabrication and Characterization of Single Crystal CdTe Solar Cells. (Thesis). University of Illinois – Chicago. Retrieved from http://hdl.handle.net/10027/19108

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Park, Jin Hwan. “Fabrication and Characterization of Single Crystal CdTe Solar Cells.” 2014. Thesis, University of Illinois – Chicago. Accessed February 28, 2021. http://hdl.handle.net/10027/19108.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Park, Jin Hwan. “Fabrication and Characterization of Single Crystal CdTe Solar Cells.” 2014. Web. 28 Feb 2021.

Vancouver:

Park JH. Fabrication and Characterization of Single Crystal CdTe Solar Cells. [Internet] [Thesis]. University of Illinois – Chicago; 2014. [cited 2021 Feb 28]. Available from: http://hdl.handle.net/10027/19108.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Park JH. Fabrication and Characterization of Single Crystal CdTe Solar Cells. [Thesis]. University of Illinois – Chicago; 2014. Available from: http://hdl.handle.net/10027/19108

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Arizona

30. Carter, Chet. Modification of Indium-Tin Oxide Surfaces: Enhancement of Solution Electron Transfer Rates and Efficiencies of Organic Thin-Layer Devices .

Degree: 2006, University of Arizona

URL: http://hdl.handle.net/10150/195405

► This dissertation has focused on the study of the ITO/organic heterojunction and the chemistries therein, it proposes appropriate strategies that enhance the interfacial physical and… (more)

▼ This dissertation has focused on the study of the ITO/organic heterojunction and the chemistries therein, it proposes appropriate strategies that enhance the interfacial physical and electronic properties for charge injection with application to organic thin-layer devices. We focused on four major aspects of this work: i) To characterize the ITO surface and chemistries that may be pertinent to interaction with adjacent organic layers in a device configuration. This developed a working model of surface and provided a foundation for modification strategies. Characterization of the electronic properties of the surface indicate less than 5% of the geometrical surface is responsible for the bulk of current flow while the rest is electrically inactive. ii) To determine the extent to which these chemistries are variable and propose circumstances where compositional changes can occur. It is shown that the surface chemistry of ITO is heterogeneous and possible very dynamic with respect to the surrounding environment. iii) To propose a strategy for modification of the interface. Modification of ITO surfaces by small molecules containing carboxylic acid functionalities is investigated. Enhancements in the electron transfer rate coefficient were realized after modification of the ITO electrode. The enhancements are found to stem from a light etching mechanism. Additionally, an elecro-catalytic effect was observed with some of the modifiers. iv) Apply these modifications to organic light emitting diodes (OLEDs) and organic photovoltaic devices (OPVs). Enhancements seen in solution electrochemical experiments are indicative of the enhancements seen for solid state devices. Modifications resulted in substantially lower leakage currents (3 orders of magnitude in some cases) as well as nearly doubling the efficiency.An additional chapter describes the creation and characterization of electrochemically grown polymer nano-structures based on blazed angle diffraction gratings. The discussion details the micro-contact printing process and the electro-catalytic growth of the conductive polymers PANI and PEDOT to form diffraction grating structures in their own right. The resulting diffraction efficiency of these structures is shown to be sensitive to environmental conditions outlining possible uses as chemical sensors. This is demonstrated by utilizing these structures as working pH and potentiometric sensors based on the changing diffraction efficiency. Advisors/Committee Members: Evans, Dennis H. (committeemember), Saavedra, S. Scott (committeemember), McGrath, Dominic V. (committeemember).

Subjects/Keywords: OLED; OPV; ITO; Indium tin oxide

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Carter, C. (2006). Modification of Indium-Tin Oxide Surfaces: Enhancement of Solution Electron Transfer Rates and Efficiencies of Organic Thin-Layer Devices . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/195405

Chicago Manual of Style (16^th Edition):

Carter, Chet. “Modification of Indium-Tin Oxide Surfaces: Enhancement of Solution Electron Transfer Rates and Efficiencies of Organic Thin-Layer Devices .” 2006. Doctoral Dissertation, University of Arizona. Accessed February 28, 2021. http://hdl.handle.net/10150/195405.

MLA Handbook (7^th Edition):

Carter, Chet. “Modification of Indium-Tin Oxide Surfaces: Enhancement of Solution Electron Transfer Rates and Efficiencies of Organic Thin-Layer Devices .” 2006. Web. 28 Feb 2021.

Vancouver:

Carter C. Modification of Indium-Tin Oxide Surfaces: Enhancement of Solution Electron Transfer Rates and Efficiencies of Organic Thin-Layer Devices . [Internet] [Doctoral dissertation]. University of Arizona; 2006. [cited 2021 Feb 28]. Available from: http://hdl.handle.net/10150/195405.

Council of Science Editors:

Carter C. Modification of Indium-Tin Oxide Surfaces: Enhancement of Solution Electron Transfer Rates and Efficiencies of Organic Thin-Layer Devices . [Doctoral Dissertation]. University of Arizona; 2006. Available from: http://hdl.handle.net/10150/195405

Open Access Theses and Dissertations