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You searched for subject:(InSb). Showing records 1 – 30 of 40 total matches.

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Virginia Tech

1. Kim, Yong-Jae. Electrical injection and detection of spin polarization in InSb/ferromagnet nanostructures.

Degree: PhD, Physics, 2012, Virginia Tech

 We present studies of the electical detection of spin injection and transport in InSb/CoFe heterostructures. As a narrow gap semiconductor, InSb has a high mobility… (more)

Subjects/Keywords: semiconductor; spin; ferromagnetism; spintronics; InSb

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APA (6th Edition):

Kim, Y. (2012). Electrical injection and detection of spin polarization in InSb/ferromagnet nanostructures. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/28589

Chicago Manual of Style (16th Edition):

Kim, Yong-Jae. “Electrical injection and detection of spin polarization in InSb/ferromagnet nanostructures.” 2012. Doctoral Dissertation, Virginia Tech. Accessed January 29, 2020. http://hdl.handle.net/10919/28589.

MLA Handbook (7th Edition):

Kim, Yong-Jae. “Electrical injection and detection of spin polarization in InSb/ferromagnet nanostructures.” 2012. Web. 29 Jan 2020.

Vancouver:

Kim Y. Electrical injection and detection of spin polarization in InSb/ferromagnet nanostructures. [Internet] [Doctoral dissertation]. Virginia Tech; 2012. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/10919/28589.

Council of Science Editors:

Kim Y. Electrical injection and detection of spin polarization in InSb/ferromagnet nanostructures. [Doctoral Dissertation]. Virginia Tech; 2012. Available from: http://hdl.handle.net/10919/28589


Université Montpellier II

2. Abautret, Johan. Conception, fabrication et caractérisation de photodiodes à avalanche InSb : Design, fabrication and characterization of InSb avalanche photodiode.

Degree: Docteur es, Electronique, 2014, Université Montpellier II

Cette thèse, réalisée à l'IES en partenariat avec la société SOFRADIR et le CEA-LETI, avait pour objectif d'évaluer les potentialités du matériau InSb pour la… (more)

Subjects/Keywords: InSb; Photodiodes; Infrarouge; Apd; Faibles flux; InSb; Photodiode; Infrared; Apd; Low flux

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APA (6th Edition):

Abautret, J. (2014). Conception, fabrication et caractérisation de photodiodes à avalanche InSb : Design, fabrication and characterization of InSb avalanche photodiode. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2014MON20232

Chicago Manual of Style (16th Edition):

Abautret, Johan. “Conception, fabrication et caractérisation de photodiodes à avalanche InSb : Design, fabrication and characterization of InSb avalanche photodiode.” 2014. Doctoral Dissertation, Université Montpellier II. Accessed January 29, 2020. http://www.theses.fr/2014MON20232.

MLA Handbook (7th Edition):

Abautret, Johan. “Conception, fabrication et caractérisation de photodiodes à avalanche InSb : Design, fabrication and characterization of InSb avalanche photodiode.” 2014. Web. 29 Jan 2020.

Vancouver:

Abautret J. Conception, fabrication et caractérisation de photodiodes à avalanche InSb : Design, fabrication and characterization of InSb avalanche photodiode. [Internet] [Doctoral dissertation]. Université Montpellier II; 2014. [cited 2020 Jan 29]. Available from: http://www.theses.fr/2014MON20232.

Council of Science Editors:

Abautret J. Conception, fabrication et caractérisation de photodiodes à avalanche InSb : Design, fabrication and characterization of InSb avalanche photodiode. [Doctoral Dissertation]. Université Montpellier II; 2014. Available from: http://www.theses.fr/2014MON20232


Vilnius University

3. Suzanovičienė, Rasa. Krūvininkų kinetikos puslaidininkiuose tyrimai naudojant terahercinės spinduliuotės impulsus.

Degree: Dissertation, Physics, 2010, Vilnius University

Ultrasparčių puslaidininkinių komponentų kūrimas reikalauja gilesnio supratimo apie tai, kaip puslaidininkiuose vyksta fizikiniai procesai, trunkantys kelias pikosekundes ar net mažiau nei vieną pikosekundę. Tokie reiškiniai,… (more)

Subjects/Keywords: THz spinduliuotė; InSb; THz spektroskopija; Drudė modelis; Plazminis dažnis; THz radiation; InSb; THz time domain spectroskopy; Drude model; Plasma frequency

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APA (6th Edition):

Suzanovičienė, R. (2010). Krūvininkų kinetikos puslaidininkiuose tyrimai naudojant terahercinės spinduliuotės impulsus. (Doctoral Dissertation). Vilnius University. Retrieved from http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101116_163938-18022 ;

Chicago Manual of Style (16th Edition):

Suzanovičienė, Rasa. “Krūvininkų kinetikos puslaidininkiuose tyrimai naudojant terahercinės spinduliuotės impulsus.” 2010. Doctoral Dissertation, Vilnius University. Accessed January 29, 2020. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101116_163938-18022 ;.

MLA Handbook (7th Edition):

Suzanovičienė, Rasa. “Krūvininkų kinetikos puslaidininkiuose tyrimai naudojant terahercinės spinduliuotės impulsus.” 2010. Web. 29 Jan 2020.

Vancouver:

Suzanovičienė R. Krūvininkų kinetikos puslaidininkiuose tyrimai naudojant terahercinės spinduliuotės impulsus. [Internet] [Doctoral dissertation]. Vilnius University; 2010. [cited 2020 Jan 29]. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101116_163938-18022 ;.

Council of Science Editors:

Suzanovičienė R. Krūvininkų kinetikos puslaidininkiuose tyrimai naudojant terahercinės spinduliuotės impulsus. [Doctoral Dissertation]. Vilnius University; 2010. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101116_163938-18022 ;


Heriot-Watt University

4. Chua, Peter Lim. Free-carrier absorption and nonlinear refraction in indium antimonide at 10.6 μm wavelength.

Degree: PhD, 1989, Heriot-Watt University

Subjects/Keywords: 535; Optical processes in InSb

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APA (6th Edition):

Chua, P. L. (1989). Free-carrier absorption and nonlinear refraction in indium antimonide at 10.6 μm wavelength. (Doctoral Dissertation). Heriot-Watt University. Retrieved from http://hdl.handle.net/10399/967

Chicago Manual of Style (16th Edition):

Chua, Peter Lim. “Free-carrier absorption and nonlinear refraction in indium antimonide at 10.6 μm wavelength.” 1989. Doctoral Dissertation, Heriot-Watt University. Accessed January 29, 2020. http://hdl.handle.net/10399/967.

MLA Handbook (7th Edition):

Chua, Peter Lim. “Free-carrier absorption and nonlinear refraction in indium antimonide at 10.6 μm wavelength.” 1989. Web. 29 Jan 2020.

Vancouver:

Chua PL. Free-carrier absorption and nonlinear refraction in indium antimonide at 10.6 μm wavelength. [Internet] [Doctoral dissertation]. Heriot-Watt University; 1989. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/10399/967.

Council of Science Editors:

Chua PL. Free-carrier absorption and nonlinear refraction in indium antimonide at 10.6 μm wavelength. [Doctoral Dissertation]. Heriot-Watt University; 1989. Available from: http://hdl.handle.net/10399/967


University of Vermont

5. Arcovitch, Cory Michael. Fabrication And Thermoelectric Characterization Of Stretchable Conductive Latex-Based Composites.

Degree: MS, Mechanical Engineering, 2017, University of Vermont

  Miniaturized stretchable electronic devices that can be bent and strained elastically without breaking, have drawn considerable research interest in recent years for wearable computers… (more)

Subjects/Keywords: Composite; Flexible; InSb; Latex; Stretchable; Thermoelectric; Mechanical Engineering; Mechanics of Materials

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APA (6th Edition):

Arcovitch, C. M. (2017). Fabrication And Thermoelectric Characterization Of Stretchable Conductive Latex-Based Composites. (Thesis). University of Vermont. Retrieved from https://scholarworks.uvm.edu/graddis/712

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Arcovitch, Cory Michael. “Fabrication And Thermoelectric Characterization Of Stretchable Conductive Latex-Based Composites.” 2017. Thesis, University of Vermont. Accessed January 29, 2020. https://scholarworks.uvm.edu/graddis/712.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Arcovitch, Cory Michael. “Fabrication And Thermoelectric Characterization Of Stretchable Conductive Latex-Based Composites.” 2017. Web. 29 Jan 2020.

Vancouver:

Arcovitch CM. Fabrication And Thermoelectric Characterization Of Stretchable Conductive Latex-Based Composites. [Internet] [Thesis]. University of Vermont; 2017. [cited 2020 Jan 29]. Available from: https://scholarworks.uvm.edu/graddis/712.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Arcovitch CM. Fabrication And Thermoelectric Characterization Of Stretchable Conductive Latex-Based Composites. [Thesis]. University of Vermont; 2017. Available from: https://scholarworks.uvm.edu/graddis/712

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Virginia Tech

6. Rudolph, Martin. Quantum transport in mesoscopic systems of Bi and other strongly spin-orbit coupled materials.

Degree: PhD, Physics, 2013, Virginia Tech

 Systems with strong spin-orbit coupling are of particular interest in solid state physics as an avenue for observing and manipulating spin physics using standard electrical… (more)

Subjects/Keywords: spin-orbit coupling; quantum coherence; bismuth; InSb; weak antilocalization

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APA (6th Edition):

Rudolph, M. (2013). Quantum transport in mesoscopic systems of Bi and other strongly spin-orbit coupled materials. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/20374

Chicago Manual of Style (16th Edition):

Rudolph, Martin. “Quantum transport in mesoscopic systems of Bi and other strongly spin-orbit coupled materials.” 2013. Doctoral Dissertation, Virginia Tech. Accessed January 29, 2020. http://hdl.handle.net/10919/20374.

MLA Handbook (7th Edition):

Rudolph, Martin. “Quantum transport in mesoscopic systems of Bi and other strongly spin-orbit coupled materials.” 2013. Web. 29 Jan 2020.

Vancouver:

Rudolph M. Quantum transport in mesoscopic systems of Bi and other strongly spin-orbit coupled materials. [Internet] [Doctoral dissertation]. Virginia Tech; 2013. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/10919/20374.

Council of Science Editors:

Rudolph M. Quantum transport in mesoscopic systems of Bi and other strongly spin-orbit coupled materials. [Doctoral Dissertation]. Virginia Tech; 2013. Available from: http://hdl.handle.net/10919/20374


University of North Texas

7. Algarni, Zaina Sluman. Exploring Growth Kinematics and Tuning Optical and Electrical Properties of Indium Antimonide Nanowires.

Degree: 2018, University of North Texas

 This dissertation work is a study of the growth kinematics, synthesis strategies and intrinsic properties of InSb nanowires (NWs). The highlights of this work include… (more)

Subjects/Keywords: "InSb" "Nanowires" "Nanowires Growth Kinematics" "Chemical vapor Deposition"

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APA (6th Edition):

Algarni, Z. S. (2018). Exploring Growth Kinematics and Tuning Optical and Electrical Properties of Indium Antimonide Nanowires. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc1404545/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Algarni, Zaina Sluman. “Exploring Growth Kinematics and Tuning Optical and Electrical Properties of Indium Antimonide Nanowires.” 2018. Thesis, University of North Texas. Accessed January 29, 2020. https://digital.library.unt.edu/ark:/67531/metadc1404545/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Algarni, Zaina Sluman. “Exploring Growth Kinematics and Tuning Optical and Electrical Properties of Indium Antimonide Nanowires.” 2018. Web. 29 Jan 2020.

Vancouver:

Algarni ZS. Exploring Growth Kinematics and Tuning Optical and Electrical Properties of Indium Antimonide Nanowires. [Internet] [Thesis]. University of North Texas; 2018. [cited 2020 Jan 29]. Available from: https://digital.library.unt.edu/ark:/67531/metadc1404545/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Algarni ZS. Exploring Growth Kinematics and Tuning Optical and Electrical Properties of Indium Antimonide Nanowires. [Thesis]. University of North Texas; 2018. Available from: https://digital.library.unt.edu/ark:/67531/metadc1404545/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. Durnez, Clémentine. Analyse des fluctuations discrètes du courant d’obscurité dans les imageurs à semi-conducteurs à base de silicium et Antimoniure d’Indium : Discrete fluctuations of dark current in imagers based on silicon and Indium Antimonide semiconductors.

Degree: Docteur es, Micro et nanosystèmes, 2017, Toulouse, ISAE

Le domaine de l’imagerie a toujours fait l’objet de curiosité, que ce soitpour enregistrer une scène, ou voir au-delà des limites de l’oeil humain grâce… (more)

Subjects/Keywords: Capteur d’images; CMOS; InSb; Signal des télégraphistes; Photodiode; Irradiation; Défauts; Métastabilité; Génération; Courant d’obscurité; Image sensor; CMOS; InSb; Random Telegraph Signal; Photodiode; Irradiation; Defects; Métastability; Generation; Dark current; 621.382 2

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APA (6th Edition):

Durnez, C. (2017). Analyse des fluctuations discrètes du courant d’obscurité dans les imageurs à semi-conducteurs à base de silicium et Antimoniure d’Indium : Discrete fluctuations of dark current in imagers based on silicon and Indium Antimonide semiconductors. (Doctoral Dissertation). Toulouse, ISAE. Retrieved from http://www.theses.fr/2017ESAE0030

Chicago Manual of Style (16th Edition):

Durnez, Clémentine. “Analyse des fluctuations discrètes du courant d’obscurité dans les imageurs à semi-conducteurs à base de silicium et Antimoniure d’Indium : Discrete fluctuations of dark current in imagers based on silicon and Indium Antimonide semiconductors.” 2017. Doctoral Dissertation, Toulouse, ISAE. Accessed January 29, 2020. http://www.theses.fr/2017ESAE0030.

MLA Handbook (7th Edition):

Durnez, Clémentine. “Analyse des fluctuations discrètes du courant d’obscurité dans les imageurs à semi-conducteurs à base de silicium et Antimoniure d’Indium : Discrete fluctuations of dark current in imagers based on silicon and Indium Antimonide semiconductors.” 2017. Web. 29 Jan 2020.

Vancouver:

Durnez C. Analyse des fluctuations discrètes du courant d’obscurité dans les imageurs à semi-conducteurs à base de silicium et Antimoniure d’Indium : Discrete fluctuations of dark current in imagers based on silicon and Indium Antimonide semiconductors. [Internet] [Doctoral dissertation]. Toulouse, ISAE; 2017. [cited 2020 Jan 29]. Available from: http://www.theses.fr/2017ESAE0030.

Council of Science Editors:

Durnez C. Analyse des fluctuations discrètes du courant d’obscurité dans les imageurs à semi-conducteurs à base de silicium et Antimoniure d’Indium : Discrete fluctuations of dark current in imagers based on silicon and Indium Antimonide semiconductors. [Doctoral Dissertation]. Toulouse, ISAE; 2017. Available from: http://www.theses.fr/2017ESAE0030


The Ohio State University

9. Jaworski, Christopher M. A Thermoelectric Investigation of Selected Lead Salts and the Spin-Seebeck Effect in Semiconductors.

Degree: PhD, Mechanical Engineering, 2012, The Ohio State University

  The dimensionless thermoelectric figure of merit, zT, is used to characterize the conversion efficiency of thermoelectric materials. In this dissertation, we include experimental results… (more)

Subjects/Keywords: Condensed Matter Physics; Mechanical Engineering; thermoelectricity; spin thermal effect; semiconductors; PbTe; InSb

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APA (6th Edition):

Jaworski, C. M. (2012). A Thermoelectric Investigation of Selected Lead Salts and the Spin-Seebeck Effect in Semiconductors. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1343745915

Chicago Manual of Style (16th Edition):

Jaworski, Christopher M. “A Thermoelectric Investigation of Selected Lead Salts and the Spin-Seebeck Effect in Semiconductors.” 2012. Doctoral Dissertation, The Ohio State University. Accessed January 29, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1343745915.

MLA Handbook (7th Edition):

Jaworski, Christopher M. “A Thermoelectric Investigation of Selected Lead Salts and the Spin-Seebeck Effect in Semiconductors.” 2012. Web. 29 Jan 2020.

Vancouver:

Jaworski CM. A Thermoelectric Investigation of Selected Lead Salts and the Spin-Seebeck Effect in Semiconductors. [Internet] [Doctoral dissertation]. The Ohio State University; 2012. [cited 2020 Jan 29]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1343745915.

Council of Science Editors:

Jaworski CM. A Thermoelectric Investigation of Selected Lead Salts and the Spin-Seebeck Effect in Semiconductors. [Doctoral Dissertation]. The Ohio State University; 2012. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1343745915


University of Exeter

10. Stone, Edmund K. Semiconductor surface plasmons : a route to terahertz waveguides and sensors.

Degree: PhD, 2012, University of Exeter

 The terahertz regime has until recently been some what neglected due to the difficulty of generating and measuring terahertz radiation. Terahertz time domain spectroscopy has… (more)

Subjects/Keywords: 530.44; THz : terahertz : plasmonics : particle plasmon : LSPR : surface plasmon : SPP : semiconductor : InSb : generation

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APA (6th Edition):

Stone, E. K. (2012). Semiconductor surface plasmons : a route to terahertz waveguides and sensors. (Doctoral Dissertation). University of Exeter. Retrieved from http://hdl.handle.net/10036/3582

Chicago Manual of Style (16th Edition):

Stone, Edmund K. “Semiconductor surface plasmons : a route to terahertz waveguides and sensors.” 2012. Doctoral Dissertation, University of Exeter. Accessed January 29, 2020. http://hdl.handle.net/10036/3582.

MLA Handbook (7th Edition):

Stone, Edmund K. “Semiconductor surface plasmons : a route to terahertz waveguides and sensors.” 2012. Web. 29 Jan 2020.

Vancouver:

Stone EK. Semiconductor surface plasmons : a route to terahertz waveguides and sensors. [Internet] [Doctoral dissertation]. University of Exeter; 2012. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/10036/3582.

Council of Science Editors:

Stone EK. Semiconductor surface plasmons : a route to terahertz waveguides and sensors. [Doctoral Dissertation]. University of Exeter; 2012. Available from: http://hdl.handle.net/10036/3582


NSYSU

11. Jang, Chih-Yuan. The Study of Electrical Property and Microstructure of InSb Thin Film.

Degree: Master, Materials Science and Engineering, 2002, NSYSU

 The relation between the electrical property and the material microstructure of InSb grown on Si utilizing electron beam evaporation technology has been investigated. The improvement… (more)

Subjects/Keywords: InSb; Electron Beam Evaporation; Electrical property

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APA (6th Edition):

Jang, C. (2002). The Study of Electrical Property and Microstructure of InSb Thin Film. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701102-142752

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jang, Chih-Yuan. “The Study of Electrical Property and Microstructure of InSb Thin Film.” 2002. Thesis, NSYSU. Accessed January 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701102-142752.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jang, Chih-Yuan. “The Study of Electrical Property and Microstructure of InSb Thin Film.” 2002. Web. 29 Jan 2020.

Vancouver:

Jang C. The Study of Electrical Property and Microstructure of InSb Thin Film. [Internet] [Thesis]. NSYSU; 2002. [cited 2020 Jan 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701102-142752.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jang C. The Study of Electrical Property and Microstructure of InSb Thin Film. [Thesis]. NSYSU; 2002. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701102-142752

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

12. Contreras, Yissel. Single and Two-Step Adsorption of Alkanethiolate and Sulfide Layers on InSb and InGaAs in the Liquid Phase .

Degree: 2017, University of Arizona

 III-V semiconductors have higher charge carrier mobilities than silicon and are used in photovoltaic devices, optical sensors, and emitters. The high injection velocities obtained with… (more)

Subjects/Keywords: alkanethiols; chemical passivation; InGaAs; InSb; self-assembled monolayers; x-ray photoelectron spectroscopy

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APA (6th Edition):

Contreras, Y. (2017). Single and Two-Step Adsorption of Alkanethiolate and Sulfide Layers on InSb and InGaAs in the Liquid Phase . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/626327

Chicago Manual of Style (16th Edition):

Contreras, Yissel. “Single and Two-Step Adsorption of Alkanethiolate and Sulfide Layers on InSb and InGaAs in the Liquid Phase .” 2017. Doctoral Dissertation, University of Arizona. Accessed January 29, 2020. http://hdl.handle.net/10150/626327.

MLA Handbook (7th Edition):

Contreras, Yissel. “Single and Two-Step Adsorption of Alkanethiolate and Sulfide Layers on InSb and InGaAs in the Liquid Phase .” 2017. Web. 29 Jan 2020.

Vancouver:

Contreras Y. Single and Two-Step Adsorption of Alkanethiolate and Sulfide Layers on InSb and InGaAs in the Liquid Phase . [Internet] [Doctoral dissertation]. University of Arizona; 2017. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/10150/626327.

Council of Science Editors:

Contreras Y. Single and Two-Step Adsorption of Alkanethiolate and Sulfide Layers on InSb and InGaAs in the Liquid Phase . [Doctoral Dissertation]. University of Arizona; 2017. Available from: http://hdl.handle.net/10150/626327


University of Dayton

13. Duran, Josh. Ion Implantation Study of Be in InSb for Photodiode Fabrication.

Degree: MS(M.S.), Electro-Optics, 2011, University of Dayton

InSb p-n junction detectors from bulk crystals are commonly utilized for mid-wave infrared (MWIR) focal-plane arrays (FPAs) because of their high quantum efficiency and… (more)

Subjects/Keywords: Electrical Engineering; Optics; Physics; Solid State Physics; infrared photodetectors; InSb; ion implantation

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APA (6th Edition):

Duran, J. (2011). Ion Implantation Study of Be in InSb for Photodiode Fabrication. (Masters Thesis). University of Dayton. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=dayton1310392650

Chicago Manual of Style (16th Edition):

Duran, Josh. “Ion Implantation Study of Be in InSb for Photodiode Fabrication.” 2011. Masters Thesis, University of Dayton. Accessed January 29, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1310392650.

MLA Handbook (7th Edition):

Duran, Josh. “Ion Implantation Study of Be in InSb for Photodiode Fabrication.” 2011. Web. 29 Jan 2020.

Vancouver:

Duran J. Ion Implantation Study of Be in InSb for Photodiode Fabrication. [Internet] [Masters thesis]. University of Dayton; 2011. [cited 2020 Jan 29]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=dayton1310392650.

Council of Science Editors:

Duran J. Ion Implantation Study of Be in InSb for Photodiode Fabrication. [Masters Thesis]. University of Dayton; 2011. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=dayton1310392650

14. Miryam Rincón Joya. Estudo por espalhamento Raman dos efeitos de desordem química e estrutural no espectro de fônos do InSb indentado.

Degree: 2004, Universidade Federal de São Carlos

 Neste trabalho foi feito um estudo das modificações sofridas pelo antimoneto do índio (InSb) crescido na direção[100 quando submetido a realização de testesde microindentações mecânicas… (more)

Subjects/Keywords: Matéria - propriedades; Raman, Espalhamento de; Indentado; InSb; Semicondutores; FISICA

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Joya, M. R. (2004). Estudo por espalhamento Raman dos efeitos de desordem química e estrutural no espectro de fônos do InSb indentado. (Thesis). Universidade Federal de São Carlos. Retrieved from http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=968

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Joya, Miryam Rincón. “Estudo por espalhamento Raman dos efeitos de desordem química e estrutural no espectro de fônos do InSb indentado.” 2004. Thesis, Universidade Federal de São Carlos. Accessed January 29, 2020. http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=968.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Joya, Miryam Rincón. “Estudo por espalhamento Raman dos efeitos de desordem química e estrutural no espectro de fônos do InSb indentado.” 2004. Web. 29 Jan 2020.

Vancouver:

Joya MR. Estudo por espalhamento Raman dos efeitos de desordem química e estrutural no espectro de fônos do InSb indentado. [Internet] [Thesis]. Universidade Federal de São Carlos; 2004. [cited 2020 Jan 29]. Available from: http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=968.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Joya MR. Estudo por espalhamento Raman dos efeitos de desordem química e estrutural no espectro de fônos do InSb indentado. [Thesis]. Universidade Federal de São Carlos; 2004. Available from: http://www.bdtd.ufscar.br/htdocs/tedeSimplificado//tde_busca/arquivo.php?codArquivo=968

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. 有田, 潤哉. Sb系化合物半導体を用いた中赤外受光デバイスの作製.

Degree: Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学

Supervisor:鈴木 寿一

マテリアルサイエンス研究科

修士

Subjects/Keywords: InSb; photo diode; mid-infrared; 中赤外; フォトダイオード

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APA (6th Edition):

有田, . (n.d.). Sb系化合物半導体を用いた中赤外受光デバイスの作製. (Thesis). Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10119/4237

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

有田, 潤哉. “Sb系化合物半導体を用いた中赤外受光デバイスの作製.” Thesis, Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学. Accessed January 29, 2020. http://hdl.handle.net/10119/4237.

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

有田, 潤哉. “Sb系化合物半導体を用いた中赤外受光デバイスの作製.” Web. 29 Jan 2020.

Note: this citation may be lacking information needed for this citation format:
No year of publication.

Vancouver:

有田 . Sb系化合物半導体を用いた中赤外受光デバイスの作製. [Internet] [Thesis]. Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学; [cited 2020 Jan 29]. Available from: http://hdl.handle.net/10119/4237.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Council of Science Editors:

有田 . Sb系化合物半導体を用いた中赤外受光デバイスの作製. [Thesis]. Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学; Available from: http://hdl.handle.net/10119/4237

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.


Case Western Reserve University

16. Fulop, Tiberiu G. From Electrodeposited InSb to Photonic Crystals and Nanopatterned Molecular Templates.

Degree: PhD, Physics, 2004, Case Western Reserve University

 The present study is based on electrochemically formed compound semiconductor such as InSb with specific applications to thin film, 3-dimensional photonic crystal structures and nanostructure… (more)

Subjects/Keywords: Physics, Condensed Matter; electrodeposition; InSb; Photonic Crystal; Nanopattern

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APA (6th Edition):

Fulop, T. G. (2004). From Electrodeposited InSb to Photonic Crystals and Nanopatterned Molecular Templates. (Doctoral Dissertation). Case Western Reserve University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=case1089900004

Chicago Manual of Style (16th Edition):

Fulop, Tiberiu G. “From Electrodeposited InSb to Photonic Crystals and Nanopatterned Molecular Templates.” 2004. Doctoral Dissertation, Case Western Reserve University. Accessed January 29, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=case1089900004.

MLA Handbook (7th Edition):

Fulop, Tiberiu G. “From Electrodeposited InSb to Photonic Crystals and Nanopatterned Molecular Templates.” 2004. Web. 29 Jan 2020.

Vancouver:

Fulop TG. From Electrodeposited InSb to Photonic Crystals and Nanopatterned Molecular Templates. [Internet] [Doctoral dissertation]. Case Western Reserve University; 2004. [cited 2020 Jan 29]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=case1089900004.

Council of Science Editors:

Fulop TG. From Electrodeposited InSb to Photonic Crystals and Nanopatterned Molecular Templates. [Doctoral Dissertation]. Case Western Reserve University; 2004. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=case1089900004


University of California – Riverside

17. Paul, Rajat Kanti. Synthesis, Characterization and Applications of InSb Semiconductor Nanowires.

Degree: Electrical Engineering, 2011, University of California – Riverside

 Synthesis of InSb nanowires using a chemical vapor deposition technique, as a function of growth temperature and time, was investigated. High aspect ratio InSb nanowires,… (more)

Subjects/Keywords: Electrical Engineering; Chemical Vapor Deposition; Field-effect Transistor; Gas Sensor; III-V Semiconductor; InSb Nanowire; NO2

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APA (6th Edition):

Paul, R. K. (2011). Synthesis, Characterization and Applications of InSb Semiconductor Nanowires. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/2885g5pv

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Paul, Rajat Kanti. “Synthesis, Characterization and Applications of InSb Semiconductor Nanowires.” 2011. Thesis, University of California – Riverside. Accessed January 29, 2020. http://www.escholarship.org/uc/item/2885g5pv.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Paul, Rajat Kanti. “Synthesis, Characterization and Applications of InSb Semiconductor Nanowires.” 2011. Web. 29 Jan 2020.

Vancouver:

Paul RK. Synthesis, Characterization and Applications of InSb Semiconductor Nanowires. [Internet] [Thesis]. University of California – Riverside; 2011. [cited 2020 Jan 29]. Available from: http://www.escholarship.org/uc/item/2885g5pv.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Paul RK. Synthesis, Characterization and Applications of InSb Semiconductor Nanowires. [Thesis]. University of California – Riverside; 2011. Available from: http://www.escholarship.org/uc/item/2885g5pv

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Virginia Tech

18. Bhowmick, Mithun. Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors.

Degree: PhD, Physics, 2012, Virginia Tech

 As the switching rates in electronic and optoelectronic devices are pushed to even higher frequencies, it is crucial to probe carrier dynamics in semiconductors on… (more)

Subjects/Keywords: Ferromagnetic Semiconductors; Narrow-Gap Semiconductors; Carrier and Spin Relaxation; InMnAs; InSb Quantum Wells; InMnSb; Time Resolved Spectroscopy

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APA (6th Edition):

Bhowmick, M. (2012). Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/77136

Chicago Manual of Style (16th Edition):

Bhowmick, Mithun. “Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors.” 2012. Doctoral Dissertation, Virginia Tech. Accessed January 29, 2020. http://hdl.handle.net/10919/77136.

MLA Handbook (7th Edition):

Bhowmick, Mithun. “Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors.” 2012. Web. 29 Jan 2020.

Vancouver:

Bhowmick M. Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors. [Internet] [Doctoral dissertation]. Virginia Tech; 2012. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/10919/77136.

Council of Science Editors:

Bhowmick M. Time Resolved Spectroscopy in InAs and InSb based Narrow-Gap Semiconductors. [Doctoral Dissertation]. Virginia Tech; 2012. Available from: http://hdl.handle.net/10919/77136


University of Lund

19. Borg, Mattias. Antimonide Heterostructure Nanowires - Growth, Physics and Devices.

Degree: 2012, University of Lund

 Abstract in Undetermined This thesis investigates the growth and application of antimonide heterostructure nanowires for low-power electronics. In the first part of the thesis, GaSb,… (more)

Subjects/Keywords: Condensed Matter Physics; GaSb; InSb; epitaxy; Nanowires; antimonides; tunnel field effect transistors; tunnel diode; InAsSb; Fysicumarkivet A:2012:Borg

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APA (6th Edition):

Borg, M. (2012). Antimonide Heterostructure Nanowires - Growth, Physics and Devices. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/2256480 ; https://portal.research.lu.se/ws/files/6159900/2256509.pdf

Chicago Manual of Style (16th Edition):

Borg, Mattias. “Antimonide Heterostructure Nanowires - Growth, Physics and Devices.” 2012. Doctoral Dissertation, University of Lund. Accessed January 29, 2020. https://lup.lub.lu.se/record/2256480 ; https://portal.research.lu.se/ws/files/6159900/2256509.pdf.

MLA Handbook (7th Edition):

Borg, Mattias. “Antimonide Heterostructure Nanowires - Growth, Physics and Devices.” 2012. Web. 29 Jan 2020.

Vancouver:

Borg M. Antimonide Heterostructure Nanowires - Growth, Physics and Devices. [Internet] [Doctoral dissertation]. University of Lund; 2012. [cited 2020 Jan 29]. Available from: https://lup.lub.lu.se/record/2256480 ; https://portal.research.lu.se/ws/files/6159900/2256509.pdf.

Council of Science Editors:

Borg M. Antimonide Heterostructure Nanowires - Growth, Physics and Devices. [Doctoral Dissertation]. University of Lund; 2012. Available from: https://lup.lub.lu.se/record/2256480 ; https://portal.research.lu.se/ws/files/6159900/2256509.pdf


University of Lund

20. Dalelkhan, Bekmurat. Charge transport in III-V narrow bandgap semiconductor nanowires.

Degree: 2019, University of Lund

 This thesis describes charge transport in III-V narrow bandgap semiconductor nanowires. We are particularly interested in quantum transport in InSb, InAs and InP-InAs core-shell nanowires.… (more)

Subjects/Keywords: Natural Sciences; Engineering and Technology; InAs; InSb; InP-InAs; narrow bandgap; spin-orbit interaction; quantum dots; Nanowires; Fysicumarkivet A:2019:Dalelkhan

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Dalelkhan, B. (2019). Charge transport in III-V narrow bandgap semiconductor nanowires. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/c8122738-3ab1-4010-a33e-01263e2cf1a5 ; https://portal.research.lu.se/ws/files/63059296/Charge_transport_in_III_V_narrow_bandgap_semiconductor_nanowires.pdf

Chicago Manual of Style (16th Edition):

Dalelkhan, Bekmurat. “Charge transport in III-V narrow bandgap semiconductor nanowires.” 2019. Doctoral Dissertation, University of Lund. Accessed January 29, 2020. https://lup.lub.lu.se/record/c8122738-3ab1-4010-a33e-01263e2cf1a5 ; https://portal.research.lu.se/ws/files/63059296/Charge_transport_in_III_V_narrow_bandgap_semiconductor_nanowires.pdf.

MLA Handbook (7th Edition):

Dalelkhan, Bekmurat. “Charge transport in III-V narrow bandgap semiconductor nanowires.” 2019. Web. 29 Jan 2020.

Vancouver:

Dalelkhan B. Charge transport in III-V narrow bandgap semiconductor nanowires. [Internet] [Doctoral dissertation]. University of Lund; 2019. [cited 2020 Jan 29]. Available from: https://lup.lub.lu.se/record/c8122738-3ab1-4010-a33e-01263e2cf1a5 ; https://portal.research.lu.se/ws/files/63059296/Charge_transport_in_III_V_narrow_bandgap_semiconductor_nanowires.pdf.

Council of Science Editors:

Dalelkhan B. Charge transport in III-V narrow bandgap semiconductor nanowires. [Doctoral Dissertation]. University of Lund; 2019. Available from: https://lup.lub.lu.se/record/c8122738-3ab1-4010-a33e-01263e2cf1a5 ; https://portal.research.lu.se/ws/files/63059296/Charge_transport_in_III_V_narrow_bandgap_semiconductor_nanowires.pdf

21. 森, 雅之. Si(001)面上でのGeバッファー層を介したInSb薄膜のヘテロエピタキシャル成長に関する研究.

Degree: 博士(工学), 2016, University of Toyama / 富山大学

III-V族化合物半導体の1つであるInSbは,Siとの間の格子不整合が約19.3%と非常に大きく,ヘテロエピタキシーが難しい系の一つである。このため,多くの研究グループが,この大きな格子不整合を緩和するために,SiとInSbの中間の格子定数を持った物質をバッファー層として挿入することを試みている。本研究では,InSbとの格子不整合が約14.5 %であるGe層を用いてSi(001)基板上に,高品質なInSb薄膜をヘテロエピタキシャル成長させることを目的として研究を行った。得られたInSb薄膜の電気的特性は十分なものではなかったものの,その作成過程で多くの成果が得られた。先ずSi(001)基板上に直接InSb薄膜を成長させ評価した(第4章)。Si(001)基板上のInSb薄膜は,多結晶成長してしまう。低温で成長させた試料は表面性が良いが,結晶性が悪いため移動度が低い。高温で成長させると結晶性は向上するが,300℃以上の成長温度では膜が凝集してしまう。しかし,230℃の低温で表面性の良いInSb薄膜を成長させ,その上に370℃という高温InSbを成長させる2段階成長法を用いることで,表面性の良いInSb薄膜を成長させることができ,高温成長による結晶性の向上によって移動度も10000cm2/Vsという高い値が得られた。しかし,膜は依然として多結晶であり,<111>方向に配向する傾向を示すことが分かった。Si(001)基板上にInSbがエピタキシャル成長しないのは,SiとInSbとの問の大きな格子不合(約19.3%)が原因と考えられる。そこで、第5章ではInSbとの格子不整合が約14.5%であるGe(001)基板上にInSb薄膜を成長させ評価した。Ge基板上のInSb薄膜は,Si(001)基板上とは大きく異なり,完全にInSbがヘテロエピタキシャル成長した。また,膜の表面性は蒸着中のブラックス比によって大きく変化し,Sbの割合が多いほど表面性の良いInSb薄膜が成長した。しかし,X線回折(XRD)と電子チャネリングパターン(ECP)の結果では,結晶性はそれとは逆にむしろInリッチの条件で成長させた試料の方が良くなり,表面性と結晶性は必ずしも一致しないことが分かった。また,ECPの輪郭がはっきりしないため,膜中に多くの欠陥があると予想される。化学量論的組成を持った膜を得るには、フラックス比4.5として蒸着するとよいことも分かった。この結果,Ge基板上にInSb薄膜をヘテロエピタキシャル成長させることができることが分かり,Si(001)基板上にGe層を成長させることで,InSb薄膜がSi(001)基板上で,エピタキシャル成長する可能性を示した。第6章では,Ge(001)基板上のInSb薄膜の実験を踏まえて,Ge/Si(001)基板上でのInSb薄膜の成長を行い,その特性を評価した。Ge基板上と同様の表面平坦性を得るために,Si基板上に成長させるGe層の膜厚を4000Åとした。フラックス比4.5で蒸着を行ったが,InSb薄膜はGe基板上と同様に,ヘテロエピタキシャル成長した。この場合もInリッチの試料膜が結晶性が良く,ECPでは(001)面を表わすパターンが現れた。また,Ge層のECPと同一の方向を向いており,Ge層上のInSb薄膜は回転せずに,Si(001)基板の面方位に沿って成長していることが分かった。しかし,完全にヘテロエピタキシャル成長しているにもかかわらず,移動度は小さかった。これは低抵抗のGe層の影響を大きく受けていると考えられる。第7章では,Ge層の抵抗を上げて,測定電流がGe層に流れるのを防ぐために,Ge層を薄くすることを試みた。Ge層が薄い場合,Si(001)基板上にGeのアイランドが形成される。アイランド以外の部分はSiと同じ格子定数を持った薄い(-2ML)Ge層である。Si(001)基板上に蒸若蒸着するGeの量を1000MLまで変化させ,その上に基板温度250℃でInSbを成長させた。Geの膜厚が増加するにつれ,多結晶のピークは小さくなり,ヘテロエピタキシーの度合い(全てのInSbピークの強度の総和に対するInSb(004)ピークの強度の比)が増加した。これはGe層の厚さが増加するにつれて,Geアイランドの面積密度が増加し,このアイランドを核としてInSbが成長したためである。Geアイランドの面積密度は-100MLまで増加し,それ以上では20%程度で,飽和したのに対し,ヘテロエピタキシーの度合いは,100ML以上のGeでは90%となり,Geアイランドの面積密度よりもはるかに大きかった。この結果は,Geアイランドを核としたエピタキシャル成長が,Geアイランドの上ばかりではなく,横方向にも進んでいることを示している。これらの実験から,Ge層を100ML程度蒸着することで,十分バッファー層としての効果を得ることができると分かった。第8章では,Ge層の厚さを100MLに固定して,InSb薄膜の結晶性に対する基板温度の効果を研究した。基板温度を高温にするにしたがって,ヘテロエピタキシーの度合いは増加したものの350℃以上で1段階成長させた場合,Si(001)基板上と同様に膜が凝集してしまった。そこで,先ず200℃で蒸着し,その後連続的に基板温度を200℃から400℃まで上げながら蒸着する2段階成長法を用いてInSb薄膜の成長を行った。この場合,250℃で1段階成長させた試料において,-90%で飽和していたヘテロエピタキシーの度合いがほぼ100%となり,X線の半値幅も狭くなった。2段階成長法で作成した場合,Si(001)基板上に100MLという薄いGe層を蒸着することにより,表面平坦性に優れ,ほぼ完全にヘテロエピタキシャル成長したInSb薄膜が得られた。

富山大学・博士(工学)・甲第26号・森雅之・1998/3/25

Subjects/Keywords: Si(001); InSb薄膜; ヘテロエピタキシャル成長; Ge/Si(001); Ge(001); InSb(004); アニーリング効果

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

森, . (2016). Si(001)面上でのGeバッファー層を介したInSb薄膜のヘテロエピタキシャル成長に関する研究. (Thesis). University of Toyama / 富山大学. Retrieved from http://hdl.handle.net/10110/10763 ; http://dx.doi.org/10.11501/3135762

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

森, 雅之. “Si(001)面上でのGeバッファー層を介したInSb薄膜のヘテロエピタキシャル成長に関する研究.” 2016. Thesis, University of Toyama / 富山大学. Accessed January 29, 2020. http://hdl.handle.net/10110/10763 ; http://dx.doi.org/10.11501/3135762.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

森, 雅之. “Si(001)面上でのGeバッファー層を介したInSb薄膜のヘテロエピタキシャル成長に関する研究.” 2016. Web. 29 Jan 2020.

Vancouver:

森 . Si(001)面上でのGeバッファー層を介したInSb薄膜のヘテロエピタキシャル成長に関する研究. [Internet] [Thesis]. University of Toyama / 富山大学; 2016. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/10110/10763 ; http://dx.doi.org/10.11501/3135762.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

森 . Si(001)面上でのGeバッファー層を介したInSb薄膜のヘテロエピタキシャル成長に関する研究. [Thesis]. University of Toyama / 富山大学; 2016. Available from: http://hdl.handle.net/10110/10763 ; http://dx.doi.org/10.11501/3135762

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université Montpellier II

22. Gassenq, Alban. Nouvelles sources lasers à super réseau InAs/GaSb/InSb pour l'émission moyen infrarouge : New Mid-Infrared Laser source with super-lattice InAs/GaSb/InSb for mid-infrared emission.

Degree: Docteur es, Génie électrique, électronique, photonique et systèmes, 2010, Université Montpellier II

Ce travail de thèse porte sur le développement et l'étude de diodes laser moyen infrarouge dont la zone active est constituée d'un super réseau (SR)… (more)

Subjects/Keywords: Laser; Semi-conducteur; Super réseau; InAs/GaSb/InSb; Antimoniure; Laser; Semi-conductor; Superlattice; InAs/GaSb/InSb; Antimonide

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gassenq, A. (2010). Nouvelles sources lasers à super réseau InAs/GaSb/InSb pour l'émission moyen infrarouge : New Mid-Infrared Laser source with super-lattice InAs/GaSb/InSb for mid-infrared emission. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2010MON20044

Chicago Manual of Style (16th Edition):

Gassenq, Alban. “Nouvelles sources lasers à super réseau InAs/GaSb/InSb pour l'émission moyen infrarouge : New Mid-Infrared Laser source with super-lattice InAs/GaSb/InSb for mid-infrared emission.” 2010. Doctoral Dissertation, Université Montpellier II. Accessed January 29, 2020. http://www.theses.fr/2010MON20044.

MLA Handbook (7th Edition):

Gassenq, Alban. “Nouvelles sources lasers à super réseau InAs/GaSb/InSb pour l'émission moyen infrarouge : New Mid-Infrared Laser source with super-lattice InAs/GaSb/InSb for mid-infrared emission.” 2010. Web. 29 Jan 2020.

Vancouver:

Gassenq A. Nouvelles sources lasers à super réseau InAs/GaSb/InSb pour l'émission moyen infrarouge : New Mid-Infrared Laser source with super-lattice InAs/GaSb/InSb for mid-infrared emission. [Internet] [Doctoral dissertation]. Université Montpellier II; 2010. [cited 2020 Jan 29]. Available from: http://www.theses.fr/2010MON20044.

Council of Science Editors:

Gassenq A. Nouvelles sources lasers à super réseau InAs/GaSb/InSb pour l'émission moyen infrarouge : New Mid-Infrared Laser source with super-lattice InAs/GaSb/InSb for mid-infrared emission. [Doctoral Dissertation]. Université Montpellier II; 2010. Available from: http://www.theses.fr/2010MON20044


Indian Institute of Science

23. Ganesan, K. Growth, Structural And Physical Properties Of Certain Antimony Based III-V Diluted Magnetic Semiconductors.

Degree: 2008, Indian Institute of Science

 Semiconductor devices are the building blocks of electronics and communication technology in the modern world. The charge, mass and spin of charge carriers in the… (more)

Subjects/Keywords: Magnetic Semiconductors; GaMnSb Crystal; Ferromagnetism; Bulk Crystal Growth; Magnetotransport; Antimony Semiconductors; Crystals - Magnetic Properties; (In,Mn)Sb Crystals; In1-xMnxSb/GaAs; (Ga,Mn)Sb; InSb Crystals; Electrodynamics

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ganesan, K. (2008). Growth, Structural And Physical Properties Of Certain Antimony Based III-V Diluted Magnetic Semiconductors. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/773

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ganesan, K. “Growth, Structural And Physical Properties Of Certain Antimony Based III-V Diluted Magnetic Semiconductors.” 2008. Thesis, Indian Institute of Science. Accessed January 29, 2020. http://hdl.handle.net/2005/773.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ganesan, K. “Growth, Structural And Physical Properties Of Certain Antimony Based III-V Diluted Magnetic Semiconductors.” 2008. Web. 29 Jan 2020.

Vancouver:

Ganesan K. Growth, Structural And Physical Properties Of Certain Antimony Based III-V Diluted Magnetic Semiconductors. [Internet] [Thesis]. Indian Institute of Science; 2008. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/2005/773.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ganesan K. Growth, Structural And Physical Properties Of Certain Antimony Based III-V Diluted Magnetic Semiconductors. [Thesis]. Indian Institute of Science; 2008. Available from: http://hdl.handle.net/2005/773

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Delft University of Technology

24. van Woerkom, D.J. Semiconductor Nanowire Josephson Junctions: In the search for the Majorana.

Degree: 2017, Delft University of Technology

 Due to the collective behavior of electrons, exotic states can appear in condensed matter systems. In this PhD thesis, we investigate semiconducting nanowire Josephson junctions… (more)

Subjects/Keywords: Josephson junctions; Andreev bound state; InSb; InAs; Majorana; semiconductor nanowire

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

van Woerkom, D. J. (2017). Semiconductor Nanowire Josephson Junctions: In the search for the Majorana. (Doctoral Dissertation). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; urn:NBN:nl:ui:24-uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; 8e71db73-d77d-4e53-ae13-33add0a9c5aa ; 10.4233/uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; urn:isbn:978-90-8593-282-6 ; urn:NBN:nl:ui:24-uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; http://resolver.tudelft.nl/uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa

Chicago Manual of Style (16th Edition):

van Woerkom, D J. “Semiconductor Nanowire Josephson Junctions: In the search for the Majorana.” 2017. Doctoral Dissertation, Delft University of Technology. Accessed January 29, 2020. http://resolver.tudelft.nl/uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; urn:NBN:nl:ui:24-uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; 8e71db73-d77d-4e53-ae13-33add0a9c5aa ; 10.4233/uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; urn:isbn:978-90-8593-282-6 ; urn:NBN:nl:ui:24-uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; http://resolver.tudelft.nl/uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa.

MLA Handbook (7th Edition):

van Woerkom, D J. “Semiconductor Nanowire Josephson Junctions: In the search for the Majorana.” 2017. Web. 29 Jan 2020.

Vancouver:

van Woerkom DJ. Semiconductor Nanowire Josephson Junctions: In the search for the Majorana. [Internet] [Doctoral dissertation]. Delft University of Technology; 2017. [cited 2020 Jan 29]. Available from: http://resolver.tudelft.nl/uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; urn:NBN:nl:ui:24-uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; 8e71db73-d77d-4e53-ae13-33add0a9c5aa ; 10.4233/uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; urn:isbn:978-90-8593-282-6 ; urn:NBN:nl:ui:24-uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; http://resolver.tudelft.nl/uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa.

Council of Science Editors:

van Woerkom DJ. Semiconductor Nanowire Josephson Junctions: In the search for the Majorana. [Doctoral Dissertation]. Delft University of Technology; 2017. Available from: http://resolver.tudelft.nl/uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; urn:NBN:nl:ui:24-uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; 8e71db73-d77d-4e53-ae13-33add0a9c5aa ; 10.4233/uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; urn:isbn:978-90-8593-282-6 ; urn:NBN:nl:ui:24-uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa ; http://resolver.tudelft.nl/uuid:8e71db73-d77d-4e53-ae13-33add0a9c5aa


Delft University of Technology

25. Zuo, K. Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices.

Degree: 2016, Delft University of Technology

 Majorana fermions are exotic elementary particles predicted in 1937 by Ettore Majorana. Although heavily searched for, they have never been found in nature up to… (more)

Subjects/Keywords: Majorana Fermions; Superconductor; InSb; Nanowire; Semiconductor; Supercurrent; Spin orbit interaction

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zuo, K. (2016). Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices. (Doctoral Dissertation). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:3fd0aed5-000c-4e50-a772-269436637fc4 ; urn:NBN:nl:ui:24-uuid:3fd0aed5-000c-4e50-a772-269436637fc4 ; urn:NBN:nl:ui:24-uuid:3fd0aed5-000c-4e50-a772-269436637fc4 ; http://resolver.tudelft.nl/uuid:3fd0aed5-000c-4e50-a772-269436637fc4

Chicago Manual of Style (16th Edition):

Zuo, K. “Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices.” 2016. Doctoral Dissertation, Delft University of Technology. Accessed January 29, 2020. http://resolver.tudelft.nl/uuid:3fd0aed5-000c-4e50-a772-269436637fc4 ; urn:NBN:nl:ui:24-uuid:3fd0aed5-000c-4e50-a772-269436637fc4 ; urn:NBN:nl:ui:24-uuid:3fd0aed5-000c-4e50-a772-269436637fc4 ; http://resolver.tudelft.nl/uuid:3fd0aed5-000c-4e50-a772-269436637fc4.

MLA Handbook (7th Edition):

Zuo, K. “Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices.” 2016. Web. 29 Jan 2020.

Vancouver:

Zuo K. Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices. [Internet] [Doctoral dissertation]. Delft University of Technology; 2016. [cited 2020 Jan 29]. Available from: http://resolver.tudelft.nl/uuid:3fd0aed5-000c-4e50-a772-269436637fc4 ; urn:NBN:nl:ui:24-uuid:3fd0aed5-000c-4e50-a772-269436637fc4 ; urn:NBN:nl:ui:24-uuid:3fd0aed5-000c-4e50-a772-269436637fc4 ; http://resolver.tudelft.nl/uuid:3fd0aed5-000c-4e50-a772-269436637fc4.

Council of Science Editors:

Zuo K. Signatures of Majorana Fermions in Hybrid Superconductor-Semiconductor Nanowire Devices. [Doctoral Dissertation]. Delft University of Technology; 2016. Available from: http://resolver.tudelft.nl/uuid:3fd0aed5-000c-4e50-a772-269436637fc4 ; urn:NBN:nl:ui:24-uuid:3fd0aed5-000c-4e50-a772-269436637fc4 ; urn:NBN:nl:ui:24-uuid:3fd0aed5-000c-4e50-a772-269436637fc4 ; http://resolver.tudelft.nl/uuid:3fd0aed5-000c-4e50-a772-269436637fc4


Delft University of Technology

26. Gül, Ö. Ballistic Majorana nanowire devices.

Degree: 2017, Delft University of Technology

 The dissertation reports a series of electron transport experiments on semiconductor nanowires towards realizing the hypothesized topological quantum computation. A topological quantum computer manipulates information… (more)

Subjects/Keywords: topological states; topological quantum computation; topological superconductivity; Majorana; semiconductor nanowire; InSb

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gül, . (2017). Ballistic Majorana nanowire devices. (Doctoral Dissertation). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; urn:NBN:nl:ui:24-uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; 5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; 10.4233/uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; urn:isbn:987-90-8593-313-7 ; urn:NBN:nl:ui:24-uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; http://resolver.tudelft.nl/uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d

Chicago Manual of Style (16th Edition):

Gül, Ö. “Ballistic Majorana nanowire devices.” 2017. Doctoral Dissertation, Delft University of Technology. Accessed January 29, 2020. http://resolver.tudelft.nl/uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; urn:NBN:nl:ui:24-uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; 5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; 10.4233/uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; urn:isbn:987-90-8593-313-7 ; urn:NBN:nl:ui:24-uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; http://resolver.tudelft.nl/uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d.

MLA Handbook (7th Edition):

Gül, Ö. “Ballistic Majorana nanowire devices.” 2017. Web. 29 Jan 2020.

Vancouver:

Gül . Ballistic Majorana nanowire devices. [Internet] [Doctoral dissertation]. Delft University of Technology; 2017. [cited 2020 Jan 29]. Available from: http://resolver.tudelft.nl/uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; urn:NBN:nl:ui:24-uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; 5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; 10.4233/uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; urn:isbn:987-90-8593-313-7 ; urn:NBN:nl:ui:24-uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; http://resolver.tudelft.nl/uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d.

Council of Science Editors:

Gül . Ballistic Majorana nanowire devices. [Doctoral Dissertation]. Delft University of Technology; 2017. Available from: http://resolver.tudelft.nl/uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; urn:NBN:nl:ui:24-uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; 5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; 10.4233/uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; urn:isbn:987-90-8593-313-7 ; urn:NBN:nl:ui:24-uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d ; http://resolver.tudelft.nl/uuid:5f84f8a9-b4e7-4248-a9cb-be9bde19b69d

27. Hanes, Larry Kenneth. Investigation of the Interaction of CO Laser Radiation with n-InSb.

Degree: 1982, North Texas State University

 The Shubnikov-de Haas magneto-resistance oscillations and photoconductivity were experimentally studied in order to investigate the interaction of CO laser radiation with n-InSb at liquid helium… (more)

Subjects/Keywords: n-InSb; absorbtion properties; transport properties; infrared radiation; Laser beams.; Photoconductivity.

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APA (6th Edition):

Hanes, L. K. (1982). Investigation of the Interaction of CO Laser Radiation with n-InSb. (Thesis). North Texas State University. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc331085/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hanes, Larry Kenneth. “Investigation of the Interaction of CO Laser Radiation with n-InSb.” 1982. Thesis, North Texas State University. Accessed January 29, 2020. https://digital.library.unt.edu/ark:/67531/metadc331085/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hanes, Larry Kenneth. “Investigation of the Interaction of CO Laser Radiation with n-InSb.” 1982. Web. 29 Jan 2020.

Vancouver:

Hanes LK. Investigation of the Interaction of CO Laser Radiation with n-InSb. [Internet] [Thesis]. North Texas State University; 1982. [cited 2020 Jan 29]. Available from: https://digital.library.unt.edu/ark:/67531/metadc331085/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hanes LK. Investigation of the Interaction of CO Laser Radiation with n-InSb. [Thesis]. North Texas State University; 1982. Available from: https://digital.library.unt.edu/ark:/67531/metadc331085/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

28. Goodwin, Mike Watson. Photoconductivity Investigation of Two-Photon Magneto-Absorption, PACRH, and Deep Levels in n-InSb.

Degree: 1982, North Texas State University

 A high resolution photoconductivity investigation of two 13 -3 photon magneto-absorption (TPMA) in n-InSb (n - 9 x 10 cm ) has been performed. This… (more)

Subjects/Keywords: two-photon magneto-absorption; n-InSb; Photoconductivity.; Magnetooptics.; Indium antimonide crystals.

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APA (6th Edition):

Goodwin, M. W. (1982). Photoconductivity Investigation of Two-Photon Magneto-Absorption, PACRH, and Deep Levels in n-InSb. (Thesis). North Texas State University. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc330703/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Goodwin, Mike Watson. “Photoconductivity Investigation of Two-Photon Magneto-Absorption, PACRH, and Deep Levels in n-InSb.” 1982. Thesis, North Texas State University. Accessed January 29, 2020. https://digital.library.unt.edu/ark:/67531/metadc330703/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Goodwin, Mike Watson. “Photoconductivity Investigation of Two-Photon Magneto-Absorption, PACRH, and Deep Levels in n-InSb.” 1982. Web. 29 Jan 2020.

Vancouver:

Goodwin MW. Photoconductivity Investigation of Two-Photon Magneto-Absorption, PACRH, and Deep Levels in n-InSb. [Internet] [Thesis]. North Texas State University; 1982. [cited 2020 Jan 29]. Available from: https://digital.library.unt.edu/ark:/67531/metadc330703/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Goodwin MW. Photoconductivity Investigation of Two-Photon Magneto-Absorption, PACRH, and Deep Levels in n-InSb. [Thesis]. North Texas State University; 1982. Available from: https://digital.library.unt.edu/ark:/67531/metadc330703/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

29. Damasco, John Jeffrey. Superconducting tunneling spectroscopy of low-dimensional materials.

Degree: PhD, Physics, 2019, University of Illinois – Urbana-Champaign

 Due to technological advances in bottom-up and top-down approaches in device fabrication, scientists have been able to construct devices that have dimensions on the orders… (more)

Subjects/Keywords: Nanofabrication; graphene; carbon; superconductivity; tunnel probe; tunnel junction; InSb; III-V; semiconductor; Fabry-Perot; quantized conductance; Majorana mode; Andreev bound state; thin films; manganite; bismuth

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Damasco, J. J. (2019). Superconducting tunneling spectroscopy of low-dimensional materials. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/104746

Chicago Manual of Style (16th Edition):

Damasco, John Jeffrey. “Superconducting tunneling spectroscopy of low-dimensional materials.” 2019. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed January 29, 2020. http://hdl.handle.net/2142/104746.

MLA Handbook (7th Edition):

Damasco, John Jeffrey. “Superconducting tunneling spectroscopy of low-dimensional materials.” 2019. Web. 29 Jan 2020.

Vancouver:

Damasco JJ. Superconducting tunneling spectroscopy of low-dimensional materials. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2019. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/2142/104746.

Council of Science Editors:

Damasco JJ. Superconducting tunneling spectroscopy of low-dimensional materials. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2019. Available from: http://hdl.handle.net/2142/104746

30. Martinez-Morales, Alfredo Adolfo. Synthesis, Characterization and Applications of Novel Nanomaterial Systems and Semiconducting Nanowires.

Degree: Electrical Engineering, 2010, University of California – Riverside

 The synthesis of novel nanomaterials systems and one-dimensioal nanostructures have created a great deal of excitement in the area of nanoelectronics and biomedical applications. The… (more)

Subjects/Keywords: Engineering, Electronics and Electrical; CAFM; CPMV; CuInS<; sub>; 2<; /sub>;

…Antimonide (InSb) are synthesized using a sono-electrochemical deposition process… …found to be photoconductive while Crich NWs are not. On the other hand, InSb is an attractive… …composition modulated In1-xSbx NWs can provide new opportunities for utilizing InSb NWs as building… 

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APA (6th Edition):

Martinez-Morales, A. A. (2010). Synthesis, Characterization and Applications of Novel Nanomaterial Systems and Semiconducting Nanowires. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/6v41x503

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Martinez-Morales, Alfredo Adolfo. “Synthesis, Characterization and Applications of Novel Nanomaterial Systems and Semiconducting Nanowires.” 2010. Thesis, University of California – Riverside. Accessed January 29, 2020. http://www.escholarship.org/uc/item/6v41x503.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Martinez-Morales, Alfredo Adolfo. “Synthesis, Characterization and Applications of Novel Nanomaterial Systems and Semiconducting Nanowires.” 2010. Web. 29 Jan 2020.

Vancouver:

Martinez-Morales AA. Synthesis, Characterization and Applications of Novel Nanomaterial Systems and Semiconducting Nanowires. [Internet] [Thesis]. University of California – Riverside; 2010. [cited 2020 Jan 29]. Available from: http://www.escholarship.org/uc/item/6v41x503.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Martinez-Morales AA. Synthesis, Characterization and Applications of Novel Nanomaterial Systems and Semiconducting Nanowires. [Thesis]. University of California – Riverside; 2010. Available from: http://www.escholarship.org/uc/item/6v41x503

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2]

.