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You searched for subject:(InP). Showing records 1 – 30 of 118 total matches.

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University of Notre Dame

1. Wenjun Li. InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer</h1>.

Degree: Electrical Engineering, 2014, University of Notre Dame

  Due to the exceptional transmission property of optical fiber and the development of high-performance optoelectronic components, microwave photonic links have been used in many… (more)

Subjects/Keywords: InGaAs/InP heterostructure; Photodiode; Microwave

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APA (6th Edition):

Li, W. (2014). InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/2r36tx33k81

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Wenjun. “InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer</h1>.” 2014. Thesis, University of Notre Dame. Accessed October 30, 2020. https://curate.nd.edu/show/2r36tx33k81.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Wenjun. “InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer</h1>.” 2014. Web. 30 Oct 2020.

Vancouver:

Li W. InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer</h1>. [Internet] [Thesis]. University of Notre Dame; 2014. [cited 2020 Oct 30]. Available from: https://curate.nd.edu/show/2r36tx33k81.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li W. InGaAs/InP Modified Uni-Travelling-Carrier Photodiode with a Cliff Layer</h1>. [Thesis]. University of Notre Dame; 2014. Available from: https://curate.nd.edu/show/2r36tx33k81

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

2. Cheng, Jun. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers.

Degree: Docteur es, Marériaux pour la micro- et l'opto-électronique, 2010, Ecully, Ecole centrale de Lyon

L’intégration monolithique de matériaux III-V ou Ge sur Si est un enjeu majeur de l’hétéroépitaxie qui a donné lieu à de nombreuses recherches depuis plus… (more)

Subjects/Keywords: Semiconducteur III-V; InP; GaAs; Semiconductors; InP; GaAs

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APA (6th Edition):

Cheng, J. (2010). Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers. (Doctoral Dissertation). Ecully, Ecole centrale de Lyon. Retrieved from http://www.theses.fr/2010ECDL0024

Chicago Manual of Style (16th Edition):

Cheng, Jun. “Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers.” 2010. Doctoral Dissertation, Ecully, Ecole centrale de Lyon. Accessed October 30, 2020. http://www.theses.fr/2010ECDL0024.

MLA Handbook (7th Edition):

Cheng, Jun. “Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers.” 2010. Web. 30 Oct 2020.

Vancouver:

Cheng J. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers. [Internet] [Doctoral dissertation]. Ecully, Ecole centrale de Lyon; 2010. [cited 2020 Oct 30]. Available from: http://www.theses.fr/2010ECDL0024.

Council of Science Editors:

Cheng J. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers. [Doctoral Dissertation]. Ecully, Ecole centrale de Lyon; 2010. Available from: http://www.theses.fr/2010ECDL0024

3. Barakat, Jean-Baptiste. Croissance auto-catalysée de nanofils d'InP sur silicium par épitaxie par jets moléculaires en mode vapeur-liquide-solide : application aux interconnexions optiques sur puce : Physique du comportement thermique des systèmes photovoltaïques.

Degree: Docteur es, Physique des matériaux, 2015, Ecully, Ecole centrale de Lyon

L’intégration monolithique de matériaux semi-conducteurs III-V sur substrat de Silicium est essentielle pour le développement de la photonique sur Silicium. L’objectif est de réaliser une… (more)

Subjects/Keywords: Photonique sur silicium; NFs InP; Si photonic; NFs InP

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APA (6th Edition):

Barakat, J. (2015). Croissance auto-catalysée de nanofils d'InP sur silicium par épitaxie par jets moléculaires en mode vapeur-liquide-solide : application aux interconnexions optiques sur puce : Physique du comportement thermique des systèmes photovoltaïques. (Doctoral Dissertation). Ecully, Ecole centrale de Lyon. Retrieved from http://www.theses.fr/2015ECDL0027

Chicago Manual of Style (16th Edition):

Barakat, Jean-Baptiste. “Croissance auto-catalysée de nanofils d'InP sur silicium par épitaxie par jets moléculaires en mode vapeur-liquide-solide : application aux interconnexions optiques sur puce : Physique du comportement thermique des systèmes photovoltaïques.” 2015. Doctoral Dissertation, Ecully, Ecole centrale de Lyon. Accessed October 30, 2020. http://www.theses.fr/2015ECDL0027.

MLA Handbook (7th Edition):

Barakat, Jean-Baptiste. “Croissance auto-catalysée de nanofils d'InP sur silicium par épitaxie par jets moléculaires en mode vapeur-liquide-solide : application aux interconnexions optiques sur puce : Physique du comportement thermique des systèmes photovoltaïques.” 2015. Web. 30 Oct 2020.

Vancouver:

Barakat J. Croissance auto-catalysée de nanofils d'InP sur silicium par épitaxie par jets moléculaires en mode vapeur-liquide-solide : application aux interconnexions optiques sur puce : Physique du comportement thermique des systèmes photovoltaïques. [Internet] [Doctoral dissertation]. Ecully, Ecole centrale de Lyon; 2015. [cited 2020 Oct 30]. Available from: http://www.theses.fr/2015ECDL0027.

Council of Science Editors:

Barakat J. Croissance auto-catalysée de nanofils d'InP sur silicium par épitaxie par jets moléculaires en mode vapeur-liquide-solide : application aux interconnexions optiques sur puce : Physique du comportement thermique des systèmes photovoltaïques. [Doctoral Dissertation]. Ecully, Ecole centrale de Lyon; 2015. Available from: http://www.theses.fr/2015ECDL0027


NSYSU

4. Lee, Jung-Chan. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.

Degree: Master, Electrical Engineering, 2013, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP Schottky tunneling barrier… (more)

Subjects/Keywords: InP; ALD; Schottky tunneling barrier MOSFET; TiO2

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APA (6th Edition):

Lee, J. (2013). Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Jung-Chan. “Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.” 2013. Thesis, NSYSU. Accessed October 30, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Jung-Chan. “Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.” 2013. Web. 30 Oct 2020.

Vancouver:

Lee J. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. [Internet] [Thesis]. NSYSU; 2013. [cited 2020 Oct 30]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee J. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

5. Tang, Tzu-hsien. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.

Degree: Master, Electrical Engineering, 2014, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP asytmmetrical Schottky barrier… (more)

Subjects/Keywords: InP; TiO2; asymmetrical Schottky barrier MOSFET; ALD

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APA (6th Edition):

Tang, T. (2014). Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Thesis, NSYSU. Accessed October 30, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Web. 30 Oct 2020.

Vancouver:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Oct 30]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

6. Yang, Sheng-Hsiung. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.

Degree: Master, Electrical Engineering, 2012, NSYSU

 In this study, the thin titanium oxide (TiO2) film deposited on InP substrate was prepared by atomic layer deposition (ALD), which was used as gate… (more)

Subjects/Keywords: InP; TiO2; ALD; Schottky barrier MOSFET

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yang, S. (2012). Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Sheng-Hsiung. “Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.” 2012. Thesis, NSYSU. Accessed October 30, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Sheng-Hsiung. “Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.” 2012. Web. 30 Oct 2020.

Vancouver:

Yang S. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. [Internet] [Thesis]. NSYSU; 2012. [cited 2020 Oct 30]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang S. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

7. Bittner, Zachary. Design, fabrication, and characterization of solar cells for high temperature and high radiation space applications.

Degree: Center for Materials Science and Engineering, 2012, Rochester Institute of Technology

 In this work, novel III-V photovoltaic (PV) materials and device structures are investi- gated for space applications, specifically for tolerance to thermal effects and ionizing… (more)

Subjects/Keywords: GaP; InGaAs; InP; MOCVD; Photovoltaics; Radiation

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APA (6th Edition):

Bittner, Z. (2012). Design, fabrication, and characterization of solar cells for high temperature and high radiation space applications. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/2746

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bittner, Zachary. “Design, fabrication, and characterization of solar cells for high temperature and high radiation space applications.” 2012. Thesis, Rochester Institute of Technology. Accessed October 30, 2020. https://scholarworks.rit.edu/theses/2746.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bittner, Zachary. “Design, fabrication, and characterization of solar cells for high temperature and high radiation space applications.” 2012. Web. 30 Oct 2020.

Vancouver:

Bittner Z. Design, fabrication, and characterization of solar cells for high temperature and high radiation space applications. [Internet] [Thesis]. Rochester Institute of Technology; 2012. [cited 2020 Oct 30]. Available from: https://scholarworks.rit.edu/theses/2746.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bittner Z. Design, fabrication, and characterization of solar cells for high temperature and high radiation space applications. [Thesis]. Rochester Institute of Technology; 2012. Available from: https://scholarworks.rit.edu/theses/2746

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

8. White, Daniel Philip. Ultra Low Noise Amplifiers for Future Radio Astronomy Observatories.

Degree: 2020, University of Manchester

In recent years, two distinct engineering challenges have been identified for Low Noise Amplifiers (LNAs) utilised in radio astronomy front-end receivers. There has been a… (more)

Subjects/Keywords: mmic; lna; low noise amplifier; gaas; inp

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APA (6th Edition):

White, D. P. (2020). Ultra Low Noise Amplifiers for Future Radio Astronomy Observatories. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:325054

Chicago Manual of Style (16th Edition):

White, Daniel Philip. “Ultra Low Noise Amplifiers for Future Radio Astronomy Observatories.” 2020. Doctoral Dissertation, University of Manchester. Accessed October 30, 2020. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:325054.

MLA Handbook (7th Edition):

White, Daniel Philip. “Ultra Low Noise Amplifiers for Future Radio Astronomy Observatories.” 2020. Web. 30 Oct 2020.

Vancouver:

White DP. Ultra Low Noise Amplifiers for Future Radio Astronomy Observatories. [Internet] [Doctoral dissertation]. University of Manchester; 2020. [cited 2020 Oct 30]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:325054.

Council of Science Editors:

White DP. Ultra Low Noise Amplifiers for Future Radio Astronomy Observatories. [Doctoral Dissertation]. University of Manchester; 2020. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:325054


Victoria University of Wellington

9. Dobhal, Garima. Quantum dot bioconjugates for the detection of extracellular vesicles in saliva and breath.

Degree: 2019, Victoria University of Wellington

 Nano-sized extracellular vesicles, released by most types of cells, contain information about the cell they originate from and have been shown to be involved in… (more)

Subjects/Keywords: Exosomes; InP/ZnS quantum dots; Detection; SPR

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APA (6th Edition):

Dobhal, G. (2019). Quantum dot bioconjugates for the detection of extracellular vesicles in saliva and breath. (Masters Thesis). Victoria University of Wellington. Retrieved from http://hdl.handle.net/10063/8119

Chicago Manual of Style (16th Edition):

Dobhal, Garima. “Quantum dot bioconjugates for the detection of extracellular vesicles in saliva and breath.” 2019. Masters Thesis, Victoria University of Wellington. Accessed October 30, 2020. http://hdl.handle.net/10063/8119.

MLA Handbook (7th Edition):

Dobhal, Garima. “Quantum dot bioconjugates for the detection of extracellular vesicles in saliva and breath.” 2019. Web. 30 Oct 2020.

Vancouver:

Dobhal G. Quantum dot bioconjugates for the detection of extracellular vesicles in saliva and breath. [Internet] [Masters thesis]. Victoria University of Wellington; 2019. [cited 2020 Oct 30]. Available from: http://hdl.handle.net/10063/8119.

Council of Science Editors:

Dobhal G. Quantum dot bioconjugates for the detection of extracellular vesicles in saliva and breath. [Masters Thesis]. Victoria University of Wellington; 2019. Available from: http://hdl.handle.net/10063/8119


University of Manchester

10. White, Daniel. Ultra Low Noise Amplifiers for future radio astronomy observatories.

Degree: PhD, 2020, University of Manchester

 In recent years, two distinct engineering challenges have been identified for Low Noise Amplifiers (LNAs) utilised in radio astronomy front-end receivers. There has been a… (more)

Subjects/Keywords: inp; mmic; lna; low noise amplifier; gaas

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

White, D. (2020). Ultra Low Noise Amplifiers for future radio astronomy observatories. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/ultra-low-noise-amplifiers-for-future-radio-astronomy-observatories(0af0cecb-137b-432e-9637-f0efd5b157b2).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.809457

Chicago Manual of Style (16th Edition):

White, Daniel. “Ultra Low Noise Amplifiers for future radio astronomy observatories.” 2020. Doctoral Dissertation, University of Manchester. Accessed October 30, 2020. https://www.research.manchester.ac.uk/portal/en/theses/ultra-low-noise-amplifiers-for-future-radio-astronomy-observatories(0af0cecb-137b-432e-9637-f0efd5b157b2).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.809457.

MLA Handbook (7th Edition):

White, Daniel. “Ultra Low Noise Amplifiers for future radio astronomy observatories.” 2020. Web. 30 Oct 2020.

Vancouver:

White D. Ultra Low Noise Amplifiers for future radio astronomy observatories. [Internet] [Doctoral dissertation]. University of Manchester; 2020. [cited 2020 Oct 30]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/ultra-low-noise-amplifiers-for-future-radio-astronomy-observatories(0af0cecb-137b-432e-9637-f0efd5b157b2).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.809457.

Council of Science Editors:

White D. Ultra Low Noise Amplifiers for future radio astronomy observatories. [Doctoral Dissertation]. University of Manchester; 2020. Available from: https://www.research.manchester.ac.uk/portal/en/theses/ultra-low-noise-amplifiers-for-future-radio-astronomy-observatories(0af0cecb-137b-432e-9637-f0efd5b157b2).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.809457

11. Campos, Tiago de. Nanowires de InP: cálculo do espectro de absorção via método k.p.

Degree: Mestrado, Física Aplicada, 2013, University of São Paulo

Nos últimos anos, os avanços nas técnicas de crescimento de semicondutores permitiram a fabricação de nanoestruturas isoladas de alta qualidade e com confinamento radial. Essas… (more)

Subjects/Keywords: k.p method; Absorção; Absorption; GPU; GPU.; InP nanowires; Método k.p; Nanofios de InP

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APA (6th Edition):

Campos, T. d. (2013). Nanowires de InP: cálculo do espectro de absorção via método k.p. (Masters Thesis). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/76/76132/tde-25092013-092712/ ;

Chicago Manual of Style (16th Edition):

Campos, Tiago de. “Nanowires de InP: cálculo do espectro de absorção via método k.p.” 2013. Masters Thesis, University of São Paulo. Accessed October 30, 2020. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-25092013-092712/ ;.

MLA Handbook (7th Edition):

Campos, Tiago de. “Nanowires de InP: cálculo do espectro de absorção via método k.p.” 2013. Web. 30 Oct 2020.

Vancouver:

Campos Td. Nanowires de InP: cálculo do espectro de absorção via método k.p. [Internet] [Masters thesis]. University of São Paulo; 2013. [cited 2020 Oct 30]. Available from: http://www.teses.usp.br/teses/disponiveis/76/76132/tde-25092013-092712/ ;.

Council of Science Editors:

Campos Td. Nanowires de InP: cálculo do espectro de absorção via método k.p. [Masters Thesis]. University of São Paulo; 2013. Available from: http://www.teses.usp.br/teses/disponiveis/76/76132/tde-25092013-092712/ ;

12. Pateras, Anastasios. Three dimensional X-ray Bragg ptychography of an extended semiconductor heterostructure : Microscopie quantitative tri-dimensionnelle de nanostructures cristallines.

Degree: Docteur es, Optique, photonique et traitement d'image, 2015, Aix-Marseille; Karlsruher Institut für Technologie

La ptychographie est une technique d’imagerie par diffraction cohérente qui vise à récupérer la phase perdue, uniquement par des mesures d’intensité en champ lointain. Cette… (more)

Subjects/Keywords: Ptychographie de Bragg; Rayons-X; Couche mince InP; Bragg ptychography; X-Rays; InP thin film

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APA (6th Edition):

Pateras, A. (2015). Three dimensional X-ray Bragg ptychography of an extended semiconductor heterostructure : Microscopie quantitative tri-dimensionnelle de nanostructures cristallines. (Doctoral Dissertation). Aix-Marseille; Karlsruher Institut für Technologie. Retrieved from http://www.theses.fr/2015AIXM4366

Chicago Manual of Style (16th Edition):

Pateras, Anastasios. “Three dimensional X-ray Bragg ptychography of an extended semiconductor heterostructure : Microscopie quantitative tri-dimensionnelle de nanostructures cristallines.” 2015. Doctoral Dissertation, Aix-Marseille; Karlsruher Institut für Technologie. Accessed October 30, 2020. http://www.theses.fr/2015AIXM4366.

MLA Handbook (7th Edition):

Pateras, Anastasios. “Three dimensional X-ray Bragg ptychography of an extended semiconductor heterostructure : Microscopie quantitative tri-dimensionnelle de nanostructures cristallines.” 2015. Web. 30 Oct 2020.

Vancouver:

Pateras A. Three dimensional X-ray Bragg ptychography of an extended semiconductor heterostructure : Microscopie quantitative tri-dimensionnelle de nanostructures cristallines. [Internet] [Doctoral dissertation]. Aix-Marseille; Karlsruher Institut für Technologie; 2015. [cited 2020 Oct 30]. Available from: http://www.theses.fr/2015AIXM4366.

Council of Science Editors:

Pateras A. Three dimensional X-ray Bragg ptychography of an extended semiconductor heterostructure : Microscopie quantitative tri-dimensionnelle de nanostructures cristallines. [Doctoral Dissertation]. Aix-Marseille; Karlsruher Institut für Technologie; 2015. Available from: http://www.theses.fr/2015AIXM4366


University of Illinois – Urbana-Champaign

13. Kumar, Vivek. Continuous flow platforms for the synthesis of high-quality semiconductor nanocrystals.

Degree: PhD, Chemical Engineering, 2016, University of Illinois – Urbana-Champaign

 Semiconductor nanocrystals are of great interest due to their unique optical and electronic properties that are intermediate between bulk semiconductors and molecules. These nanoparticles find… (more)

Subjects/Keywords: continuous flow synthesis; quantum dots; nanorods; anisotropic nanocrystals; CdSe; ZnSe; semiconductor; nanocrystals; InP; InP/ZnSeS; static mixers

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APA (6th Edition):

Kumar, V. (2016). Continuous flow platforms for the synthesis of high-quality semiconductor nanocrystals. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/100424

Chicago Manual of Style (16th Edition):

Kumar, Vivek. “Continuous flow platforms for the synthesis of high-quality semiconductor nanocrystals.” 2016. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 30, 2020. http://hdl.handle.net/2142/100424.

MLA Handbook (7th Edition):

Kumar, Vivek. “Continuous flow platforms for the synthesis of high-quality semiconductor nanocrystals.” 2016. Web. 30 Oct 2020.

Vancouver:

Kumar V. Continuous flow platforms for the synthesis of high-quality semiconductor nanocrystals. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2016. [cited 2020 Oct 30]. Available from: http://hdl.handle.net/2142/100424.

Council of Science Editors:

Kumar V. Continuous flow platforms for the synthesis of high-quality semiconductor nanocrystals. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/100424


Université de Sherbrooke

14. Liu, Neng. Sur l’origine de l’interdiffusion de puits quantiques par laser uv dans des heterostructures de semi-conducteurs iii-v: On the origin of uv laser-induced quantum well intermixing in iii-v semiconductor heterostructures.

Degree: 2014, Université de Sherbrooke

 Résumé : Les circuits photoniques intégrés qui combinent des dispositifs photoniques pour la génération, la détection, la modulation, l'amplification, la commutation et le transport de… (more)

Subjects/Keywords: Interdiffusion de puits quantiques; Laser excimer; Microstructure InP/InGaAs/InGaAsP; XPS; SIMS; Quantum well intermixing; Excimer laser; InP/InGaAs/InGaAsP microstructure

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APA (6th Edition):

Liu, N. (2014). Sur l’origine de l’interdiffusion de puits quantiques par laser uv dans des heterostructures de semi-conducteurs iii-v: On the origin of uv laser-induced quantum well intermixing in iii-v semiconductor heterostructures. (Doctoral Dissertation). Université de Sherbrooke. Retrieved from http://savoirs.usherbrooke.ca/handle/11143/5291

Chicago Manual of Style (16th Edition):

Liu, Neng. “Sur l’origine de l’interdiffusion de puits quantiques par laser uv dans des heterostructures de semi-conducteurs iii-v: On the origin of uv laser-induced quantum well intermixing in iii-v semiconductor heterostructures.” 2014. Doctoral Dissertation, Université de Sherbrooke. Accessed October 30, 2020. http://savoirs.usherbrooke.ca/handle/11143/5291.

MLA Handbook (7th Edition):

Liu, Neng. “Sur l’origine de l’interdiffusion de puits quantiques par laser uv dans des heterostructures de semi-conducteurs iii-v: On the origin of uv laser-induced quantum well intermixing in iii-v semiconductor heterostructures.” 2014. Web. 30 Oct 2020.

Vancouver:

Liu N. Sur l’origine de l’interdiffusion de puits quantiques par laser uv dans des heterostructures de semi-conducteurs iii-v: On the origin of uv laser-induced quantum well intermixing in iii-v semiconductor heterostructures. [Internet] [Doctoral dissertation]. Université de Sherbrooke; 2014. [cited 2020 Oct 30]. Available from: http://savoirs.usherbrooke.ca/handle/11143/5291.

Council of Science Editors:

Liu N. Sur l’origine de l’interdiffusion de puits quantiques par laser uv dans des heterostructures de semi-conducteurs iii-v: On the origin of uv laser-induced quantum well intermixing in iii-v semiconductor heterostructures. [Doctoral Dissertation]. Université de Sherbrooke; 2014. Available from: http://savoirs.usherbrooke.ca/handle/11143/5291

15. Rode, Johann Christian. Highly Scaled InP/InGaAs DHBTs Beyond 1 THz Bandwidth.

Degree: 2015, University of California – eScholarship, University of California

 This work examines the efforts pursued to extend the bandwidth of InP-based DHBTs above 1 THz. Aggressive lithographic and epitaxial scaling of key device dimensions… (more)

Subjects/Keywords: Engineering; Electrical engineering; Nanotechnology; Heterobipolar; InP; Scaling; Terahertz; Transistor

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APA (6th Edition):

Rode, J. C. (2015). Highly Scaled InP/InGaAs DHBTs Beyond 1 THz Bandwidth. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/9db0g2gd

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rode, Johann Christian. “Highly Scaled InP/InGaAs DHBTs Beyond 1 THz Bandwidth.” 2015. Thesis, University of California – eScholarship, University of California. Accessed October 30, 2020. http://www.escholarship.org/uc/item/9db0g2gd.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rode, Johann Christian. “Highly Scaled InP/InGaAs DHBTs Beyond 1 THz Bandwidth.” 2015. Web. 30 Oct 2020.

Vancouver:

Rode JC. Highly Scaled InP/InGaAs DHBTs Beyond 1 THz Bandwidth. [Internet] [Thesis]. University of California – eScholarship, University of California; 2015. [cited 2020 Oct 30]. Available from: http://www.escholarship.org/uc/item/9db0g2gd.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rode JC. Highly Scaled InP/InGaAs DHBTs Beyond 1 THz Bandwidth. [Thesis]. University of California – eScholarship, University of California; 2015. Available from: http://www.escholarship.org/uc/item/9db0g2gd

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Surrey

16. Boud, John Michael. The electron mobility in indium phosphide.

Degree: PhD, 1988, University of Surrey

 Hall effect and resistivity measurements have been carried out as a function of hydrostatic pressure and temperature on a number of samples of indium phosphide… (more)

Subjects/Keywords: 530.41; Electron transport in InP

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APA (6th Edition):

Boud, J. M. (1988). The electron mobility in indium phosphide. (Doctoral Dissertation). University of Surrey. Retrieved from http://epubs.surrey.ac.uk/847279/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234455

Chicago Manual of Style (16th Edition):

Boud, John Michael. “The electron mobility in indium phosphide.” 1988. Doctoral Dissertation, University of Surrey. Accessed October 30, 2020. http://epubs.surrey.ac.uk/847279/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234455.

MLA Handbook (7th Edition):

Boud, John Michael. “The electron mobility in indium phosphide.” 1988. Web. 30 Oct 2020.

Vancouver:

Boud JM. The electron mobility in indium phosphide. [Internet] [Doctoral dissertation]. University of Surrey; 1988. [cited 2020 Oct 30]. Available from: http://epubs.surrey.ac.uk/847279/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234455.

Council of Science Editors:

Boud JM. The electron mobility in indium phosphide. [Doctoral Dissertation]. University of Surrey; 1988. Available from: http://epubs.surrey.ac.uk/847279/ ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234455


Halmstad University

17. Dawei, Jiang. Electrical and optical characterization of InP nanowire-based photodetectors.

Degree: Computer and Electrical Engineering (IDE), 2014, Halmstad University

This thesis deals with electrical and optical characterization  of p+i–n+ nanowire-based photodetectors/solar  cells. I have investigated their I-V performance and found that all of them exhibit a clear rectifying behavior with an ideality factor around 2.2 at 300K.  used Fourier transform infrared spectroscopy to extract their optical properties. From the spectrally resolved photocurrent data, I conclude that the main photocurrent is generated in the i-segment of the nanowire (NW) p-i-n junctions, with negligible  contribution from the substrate.   I also used a C-V technique to investigate the impurity/doping profiles of the NW p+-i-n+ junction.  The technique has been widely used for investigations of doping profiles in planar p-n junctions, in particular with one terminal (n or p) highly doped. To verify the accuracy of the technique, I also used a planar Schottky  sample with an already known doping profile for a test  experiment. The result is very similar to the actual data. When we used the technique to investigate the doping level in the NWs photodetectors grown on InP substrates, the results show a very high capacitance above 800pF which most likely is due to the influence of the parasitic capacitance from the insulating layer of SiO2. Thus,  a new sample design is required to investigate the  doping profiles of NWs. 

Subjects/Keywords: IR photodetectors; electrical characteristics; optical characteristics; nanophotonics; InP; nanowires.

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APA (6th Edition):

Dawei, J. (2014). Electrical and optical characterization of InP nanowire-based photodetectors. (Thesis). Halmstad University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-25733

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dawei, Jiang. “Electrical and optical characterization of InP nanowire-based photodetectors.” 2014. Thesis, Halmstad University. Accessed October 30, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-25733.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dawei, Jiang. “Electrical and optical characterization of InP nanowire-based photodetectors.” 2014. Web. 30 Oct 2020.

Vancouver:

Dawei J. Electrical and optical characterization of InP nanowire-based photodetectors. [Internet] [Thesis]. Halmstad University; 2014. [cited 2020 Oct 30]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-25733.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dawei J. Electrical and optical characterization of InP nanowire-based photodetectors. [Thesis]. Halmstad University; 2014. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-25733

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

18. Loi, Ruggero. Heterogeneous integration of InP etched facet lasers to silicon photonics by micro transfer printing.

Degree: 2019, University College Cork

 Photonics Integrated Circuits allow optical functionalities and interconnects with small footprint, large band -width and -density, low heat generation. The silicon photonics platform (SOI) offers… (more)

Subjects/Keywords: Laser; InP; Micro-transfer printing; Silicon photonics; Integrated photonics

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APA (6th Edition):

Loi, R. (2019). Heterogeneous integration of InP etched facet lasers to silicon photonics by micro transfer printing. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/8562

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Loi, Ruggero. “Heterogeneous integration of InP etched facet lasers to silicon photonics by micro transfer printing.” 2019. Thesis, University College Cork. Accessed October 30, 2020. http://hdl.handle.net/10468/8562.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Loi, Ruggero. “Heterogeneous integration of InP etched facet lasers to silicon photonics by micro transfer printing.” 2019. Web. 30 Oct 2020.

Vancouver:

Loi R. Heterogeneous integration of InP etched facet lasers to silicon photonics by micro transfer printing. [Internet] [Thesis]. University College Cork; 2019. [cited 2020 Oct 30]. Available from: http://hdl.handle.net/10468/8562.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Loi R. Heterogeneous integration of InP etched facet lasers to silicon photonics by micro transfer printing. [Thesis]. University College Cork; 2019. Available from: http://hdl.handle.net/10468/8562

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Australian National University

19. Fonseka, H. Aruni. Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications .

Degree: 2015, Australian National University

 Indium Phosphide (InP) forms a cornerstone amongst direct band-gap III-V compound semiconductors with the possibility for a wide range of other III-V alloys to be… (more)

Subjects/Keywords: Nanowires; InP; InGaAs; [100] orientation; Si substrate; Quantum Wells

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APA (6th Edition):

Fonseka, H. A. (2015). Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/16525

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Fonseka, H Aruni. “Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications .” 2015. Thesis, Australian National University. Accessed October 30, 2020. http://hdl.handle.net/1885/16525.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Fonseka, H Aruni. “Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications .” 2015. Web. 30 Oct 2020.

Vancouver:

Fonseka HA. Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications . [Internet] [Thesis]. Australian National University; 2015. [cited 2020 Oct 30]. Available from: http://hdl.handle.net/1885/16525.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fonseka HA. Growth and Characterisation of InP Nanowires and Nanowire-Based Heterostructures for Future Optoelectronic Device Applications . [Thesis]. Australian National University; 2015. Available from: http://hdl.handle.net/1885/16525

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

20. Kim, Seung Hyun. Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability.

Degree: MS, 1200, 2014, University of Illinois – Urbana-Champaign

 Metal-assisted chemical etching (MacEtch), a wet etching method developed in 2000, has been the focus of extensive research in the area of semiconductor nanotechnology for… (more)

Subjects/Keywords: Indium Phosphide (InP); metal-assisted chemical etching (MacEtch); nanowires; nanostructures

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APA (6th Edition):

Kim, S. H. (2014). Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/49653

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kim, Seung Hyun. “Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability.” 2014. Thesis, University of Illinois – Urbana-Champaign. Accessed October 30, 2020. http://hdl.handle.net/2142/49653.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kim, Seung Hyun. “Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability.” 2014. Web. 30 Oct 2020.

Vancouver:

Kim SH. Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2014. [cited 2020 Oct 30]. Available from: http://hdl.handle.net/2142/49653.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kim SH. Inverse metal-assisted chemical etching of indium phosphide with sub-20 nm scalability. [Thesis]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/49653

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Virieux, Heloise. Nanocristaux luminescents de phosphures d'indium et de zinc : synthèse, enrobage et caractérisation : Indium phosphide and zinc phosphide luminescent nanocrystals : synthesis, coating and characterization.

Degree: Docteur es, Nanophysique, 2013, Toulouse, INSA

 Ce travail de thèse porte sur la synthèse organo-métallique de nanoparticules (NPs) semi-conductrices colloïdales de phosphures d’indium (InP), de zinc (Zn3P2) et de structures cœur/coquille… (more)

Subjects/Keywords: Nanoparticules semi-conductrices; Phosphure d’indium; Phosphure de zin; Synthèse organométallique; RMN; XPS; Zn3P2; InP/ZnS; InP; Quantum Dots; Indium phosphide; Zinc phosphide; InP; InP/ZnS; Zn3P2; Organometallic synthesis; NMR; XPS; 620.5

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APA (6th Edition):

Virieux, H. (2013). Nanocristaux luminescents de phosphures d'indium et de zinc : synthèse, enrobage et caractérisation : Indium phosphide and zinc phosphide luminescent nanocrystals : synthesis, coating and characterization. (Doctoral Dissertation). Toulouse, INSA. Retrieved from http://www.theses.fr/2013ISAT0030

Chicago Manual of Style (16th Edition):

Virieux, Heloise. “Nanocristaux luminescents de phosphures d'indium et de zinc : synthèse, enrobage et caractérisation : Indium phosphide and zinc phosphide luminescent nanocrystals : synthesis, coating and characterization.” 2013. Doctoral Dissertation, Toulouse, INSA. Accessed October 30, 2020. http://www.theses.fr/2013ISAT0030.

MLA Handbook (7th Edition):

Virieux, Heloise. “Nanocristaux luminescents de phosphures d'indium et de zinc : synthèse, enrobage et caractérisation : Indium phosphide and zinc phosphide luminescent nanocrystals : synthesis, coating and characterization.” 2013. Web. 30 Oct 2020.

Vancouver:

Virieux H. Nanocristaux luminescents de phosphures d'indium et de zinc : synthèse, enrobage et caractérisation : Indium phosphide and zinc phosphide luminescent nanocrystals : synthesis, coating and characterization. [Internet] [Doctoral dissertation]. Toulouse, INSA; 2013. [cited 2020 Oct 30]. Available from: http://www.theses.fr/2013ISAT0030.

Council of Science Editors:

Virieux H. Nanocristaux luminescents de phosphures d'indium et de zinc : synthèse, enrobage et caractérisation : Indium phosphide and zinc phosphide luminescent nanocrystals : synthesis, coating and characterization. [Doctoral Dissertation]. Toulouse, INSA; 2013. Available from: http://www.theses.fr/2013ISAT0030


University of Lund

22. Zeng, Xulu. InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization.

Degree: 2018, University of Lund

 Semiconductor nanowire solar cells have achieved comparable efficiency to their planar counterparts with substantial reduction of material consumption. Tandem geometry is a path towards even… (more)

Subjects/Keywords: Nano Technology; nanowires; GaInP; InP; tandem; tunnel diode; solar cell

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APA (6th Edition):

Zeng, X. (2018). InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/29728ef0-320b-4815-a318-ff7bd2ca73a3 ; https://portal.research.lu.se/ws/files/43099533/Doctoral_thesis_Xulu_Zeng_LU.pdf

Chicago Manual of Style (16th Edition):

Zeng, Xulu. “InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization.” 2018. Doctoral Dissertation, University of Lund. Accessed October 30, 2020. https://lup.lub.lu.se/record/29728ef0-320b-4815-a318-ff7bd2ca73a3 ; https://portal.research.lu.se/ws/files/43099533/Doctoral_thesis_Xulu_Zeng_LU.pdf.

MLA Handbook (7th Edition):

Zeng, Xulu. “InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization.” 2018. Web. 30 Oct 2020.

Vancouver:

Zeng X. InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization. [Internet] [Doctoral dissertation]. University of Lund; 2018. [cited 2020 Oct 30]. Available from: https://lup.lub.lu.se/record/29728ef0-320b-4815-a318-ff7bd2ca73a3 ; https://portal.research.lu.se/ws/files/43099533/Doctoral_thesis_Xulu_Zeng_LU.pdf.

Council of Science Editors:

Zeng X. InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization. [Doctoral Dissertation]. University of Lund; 2018. Available from: https://lup.lub.lu.se/record/29728ef0-320b-4815-a318-ff7bd2ca73a3 ; https://portal.research.lu.se/ws/files/43099533/Doctoral_thesis_Xulu_Zeng_LU.pdf


University of Cincinnati

23. Perera, Saranga D. Investigation of exciton dynamics and electronic band structure of InP and GaAs nanowires.

Degree: PhD, Arts and Sciences: Physics, 2012, University of Cincinnati

  In this study we used Photoluminescence (PL), Time-resolved photoluminescence (TRPL) and Photoluminescence excitation (PLE) spectroscopy to investigate optical and electronic properties of individual Zincblend… (more)

Subjects/Keywords: Physics; Wurtzite InP NWs; Zincblende GaAs NWs; Photoluminescence; PLE; TRPL; exciton

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APA (6th Edition):

Perera, S. D. (2012). Investigation of exciton dynamics and electronic band structure of InP and GaAs nanowires. (Doctoral Dissertation). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1352993854

Chicago Manual of Style (16th Edition):

Perera, Saranga D. “Investigation of exciton dynamics and electronic band structure of InP and GaAs nanowires.” 2012. Doctoral Dissertation, University of Cincinnati. Accessed October 30, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1352993854.

MLA Handbook (7th Edition):

Perera, Saranga D. “Investigation of exciton dynamics and electronic band structure of InP and GaAs nanowires.” 2012. Web. 30 Oct 2020.

Vancouver:

Perera SD. Investigation of exciton dynamics and electronic band structure of InP and GaAs nanowires. [Internet] [Doctoral dissertation]. University of Cincinnati; 2012. [cited 2020 Oct 30]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1352993854.

Council of Science Editors:

Perera SD. Investigation of exciton dynamics and electronic band structure of InP and GaAs nanowires. [Doctoral Dissertation]. University of Cincinnati; 2012. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1352993854


Université de Bordeaux I

24. Koné, Gilles Amadou. Caractérisation des effets thermiques et des mécanismes de défaillance spécifiques aux transistors bipolaires submicroniques sur substrat InP dédiés aux transmissions optiques Ethernet à 112 Gb/s : Développement des techniques de Microscopie Magnétique pour la localisation des défauts dans les circuits tridimensionnels.

Degree: Docteur es, Electronique, 2011, Université de Bordeaux I

Ces travaux de thèses présentent un protocole expérimental d’évaluation de la fiabilité des transistors bipolaire à double hétéro-jonction submicroniques sur substrat InP. Les mécanismes de… (more)

Subjects/Keywords: THB; Mécanisme de défaillance; Simulation physique 2D TCAD; Vieillissement accéléré; Modélisation compacte; InP; InGaAs; GaAsSb; HBT; Failure mechanisms; Compact Modelling; Accelerated Aging test; 2D simulation using TCAD; InP; InGaAs; GaAsSb

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APA (6th Edition):

Koné, G. A. (2011). Caractérisation des effets thermiques et des mécanismes de défaillance spécifiques aux transistors bipolaires submicroniques sur substrat InP dédiés aux transmissions optiques Ethernet à 112 Gb/s : Développement des techniques de Microscopie Magnétique pour la localisation des défauts dans les circuits tridimensionnels. (Doctoral Dissertation). Université de Bordeaux I. Retrieved from http://www.theses.fr/2011BOR14471

Chicago Manual of Style (16th Edition):

Koné, Gilles Amadou. “Caractérisation des effets thermiques et des mécanismes de défaillance spécifiques aux transistors bipolaires submicroniques sur substrat InP dédiés aux transmissions optiques Ethernet à 112 Gb/s : Développement des techniques de Microscopie Magnétique pour la localisation des défauts dans les circuits tridimensionnels.” 2011. Doctoral Dissertation, Université de Bordeaux I. Accessed October 30, 2020. http://www.theses.fr/2011BOR14471.

MLA Handbook (7th Edition):

Koné, Gilles Amadou. “Caractérisation des effets thermiques et des mécanismes de défaillance spécifiques aux transistors bipolaires submicroniques sur substrat InP dédiés aux transmissions optiques Ethernet à 112 Gb/s : Développement des techniques de Microscopie Magnétique pour la localisation des défauts dans les circuits tridimensionnels.” 2011. Web. 30 Oct 2020.

Vancouver:

Koné GA. Caractérisation des effets thermiques et des mécanismes de défaillance spécifiques aux transistors bipolaires submicroniques sur substrat InP dédiés aux transmissions optiques Ethernet à 112 Gb/s : Développement des techniques de Microscopie Magnétique pour la localisation des défauts dans les circuits tridimensionnels. [Internet] [Doctoral dissertation]. Université de Bordeaux I; 2011. [cited 2020 Oct 30]. Available from: http://www.theses.fr/2011BOR14471.

Council of Science Editors:

Koné GA. Caractérisation des effets thermiques et des mécanismes de défaillance spécifiques aux transistors bipolaires submicroniques sur substrat InP dédiés aux transmissions optiques Ethernet à 112 Gb/s : Développement des techniques de Microscopie Magnétique pour la localisation des défauts dans les circuits tridimensionnels. [Doctoral Dissertation]. Université de Bordeaux I; 2011. Available from: http://www.theses.fr/2011BOR14471

25. Brevalle, Gaëlle. Etude des boites quantiques pour la réalisation d'un laser VECSEL bi-fréquence cohérent : Investigation of quantum dots VECSEL for the realization of a coherent dual wavelength laser.

Degree: Docteur es, Photonique, 2019, Rennes, INSA

Ce travail de thèse porte sur différentes études expérimentales permettant de lier les performances d'un laser bi-fréquence aux propriétés structurales physiques des boites quantiques (BQs).… (more)

Subjects/Keywords: VECSEL; Boites quantiques InAs/InP; Laser bi-fréquence; Spectroscopie de saturation d’absorption; SHB; Couplage; VECSEL; InAs/InP quantum dots; Dual-frequency laser; Saturated absorption spectroscopy; SHB; Coupling; 621

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APA (6th Edition):

Brevalle, G. (2019). Etude des boites quantiques pour la réalisation d'un laser VECSEL bi-fréquence cohérent : Investigation of quantum dots VECSEL for the realization of a coherent dual wavelength laser. (Doctoral Dissertation). Rennes, INSA. Retrieved from http://www.theses.fr/2019ISAR0023

Chicago Manual of Style (16th Edition):

Brevalle, Gaëlle. “Etude des boites quantiques pour la réalisation d'un laser VECSEL bi-fréquence cohérent : Investigation of quantum dots VECSEL for the realization of a coherent dual wavelength laser.” 2019. Doctoral Dissertation, Rennes, INSA. Accessed October 30, 2020. http://www.theses.fr/2019ISAR0023.

MLA Handbook (7th Edition):

Brevalle, Gaëlle. “Etude des boites quantiques pour la réalisation d'un laser VECSEL bi-fréquence cohérent : Investigation of quantum dots VECSEL for the realization of a coherent dual wavelength laser.” 2019. Web. 30 Oct 2020.

Vancouver:

Brevalle G. Etude des boites quantiques pour la réalisation d'un laser VECSEL bi-fréquence cohérent : Investigation of quantum dots VECSEL for the realization of a coherent dual wavelength laser. [Internet] [Doctoral dissertation]. Rennes, INSA; 2019. [cited 2020 Oct 30]. Available from: http://www.theses.fr/2019ISAR0023.

Council of Science Editors:

Brevalle G. Etude des boites quantiques pour la réalisation d'un laser VECSEL bi-fréquence cohérent : Investigation of quantum dots VECSEL for the realization of a coherent dual wavelength laser. [Doctoral Dissertation]. Rennes, INSA; 2019. Available from: http://www.theses.fr/2019ISAR0023


University of Lund

26. Göransson, David. Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires.

Degree: 2019, University of Lund

 The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are investigated in thisthesis. The semiconductor materials are grown by metal-organic vapor phase epitaxy, yielding… (more)

Subjects/Keywords: Nano Technology; Nanowire; InAsP-InP core-shell nanowire; InP-InAs core-shell nanowire; strain; XRD; charge transport; Coulomb blockade; Josephson junction; Fysicumarkivet A:2019:Göransson

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APA (6th Edition):

Göransson, D. (2019). Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/efc44c26-6882-4ca5-8e4b-6151d759d2b8 ; https://portal.research.lu.se/ws/files/62518747/Strain_and_Charge_Transport_in_InAsP_InP_and_InAs_InP_Core_Shell_Nanowires_Doctoral_Thesis_David_G_ransson.pdf

Chicago Manual of Style (16th Edition):

Göransson, David. “Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires.” 2019. Doctoral Dissertation, University of Lund. Accessed October 30, 2020. https://lup.lub.lu.se/record/efc44c26-6882-4ca5-8e4b-6151d759d2b8 ; https://portal.research.lu.se/ws/files/62518747/Strain_and_Charge_Transport_in_InAsP_InP_and_InAs_InP_Core_Shell_Nanowires_Doctoral_Thesis_David_G_ransson.pdf.

MLA Handbook (7th Edition):

Göransson, David. “Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires.” 2019. Web. 30 Oct 2020.

Vancouver:

Göransson D. Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires. [Internet] [Doctoral dissertation]. University of Lund; 2019. [cited 2020 Oct 30]. Available from: https://lup.lub.lu.se/record/efc44c26-6882-4ca5-8e4b-6151d759d2b8 ; https://portal.research.lu.se/ws/files/62518747/Strain_and_Charge_Transport_in_InAsP_InP_and_InAs_InP_Core_Shell_Nanowires_Doctoral_Thesis_David_G_ransson.pdf.

Council of Science Editors:

Göransson D. Strain and Charge Transport in InAsP-InP and InP-InAs Core-Shell Nanowires. [Doctoral Dissertation]. University of Lund; 2019. Available from: https://lup.lub.lu.se/record/efc44c26-6882-4ca5-8e4b-6151d759d2b8 ; https://portal.research.lu.se/ws/files/62518747/Strain_and_Charge_Transport_in_InAsP_InP_and_InAs_InP_Core_Shell_Nanowires_Doctoral_Thesis_David_G_ransson.pdf

27. Ghegin, Elodie. Integration of innovative ohmic contacts for heterogeneous III-V/Silicon Photonic devices : Intégration de contacts innovants pour dispositifs photoniques III-V/Si.

Degree: Docteur es, Physique. Matière condensée et interfaces, 2017, Sorbonne Paris Cité

Depuis les années 2000, en raison d’une multitude de moyens de communication émergents, les besoins en termes d’échange de données n’ont cessé d’augmenter. Ces modifications… (more)

Subjects/Keywords: Contact Métal/n-InP; Contact Métal/p-InGaAs; Photonique sur Silicium; Laser III-V; Metal/n-InP contact; Metal/p-InGaAs contact; Si Photonics; III-V laser

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APA (6th Edition):

Ghegin, E. (2017). Integration of innovative ohmic contacts for heterogeneous III-V/Silicon Photonic devices : Intégration de contacts innovants pour dispositifs photoniques III-V/Si. (Doctoral Dissertation). Sorbonne Paris Cité. Retrieved from http://www.theses.fr/2017USPCC008

Chicago Manual of Style (16th Edition):

Ghegin, Elodie. “Integration of innovative ohmic contacts for heterogeneous III-V/Silicon Photonic devices : Intégration de contacts innovants pour dispositifs photoniques III-V/Si.” 2017. Doctoral Dissertation, Sorbonne Paris Cité. Accessed October 30, 2020. http://www.theses.fr/2017USPCC008.

MLA Handbook (7th Edition):

Ghegin, Elodie. “Integration of innovative ohmic contacts for heterogeneous III-V/Silicon Photonic devices : Intégration de contacts innovants pour dispositifs photoniques III-V/Si.” 2017. Web. 30 Oct 2020.

Vancouver:

Ghegin E. Integration of innovative ohmic contacts for heterogeneous III-V/Silicon Photonic devices : Intégration de contacts innovants pour dispositifs photoniques III-V/Si. [Internet] [Doctoral dissertation]. Sorbonne Paris Cité; 2017. [cited 2020 Oct 30]. Available from: http://www.theses.fr/2017USPCC008.

Council of Science Editors:

Ghegin E. Integration of innovative ohmic contacts for heterogeneous III-V/Silicon Photonic devices : Intégration de contacts innovants pour dispositifs photoniques III-V/Si. [Doctoral Dissertation]. Sorbonne Paris Cité; 2017. Available from: http://www.theses.fr/2017USPCC008

28. Zouaoui, Mouna. Etude des propriétés électroniques des boîtes quantiques InAs/InP par spectroscopie de défauts profonds (DLTS) pour des applications optoélectroniques : Study of the electronic properties of InAs/InP quantum dots by the deep levels transient spectroscopy (DLTS) for optoelectronic applications.

Degree: Docteur es, Matériaux, 2013, INSA Lyon

Ce travail porte sur une étude des propriétés électroniques des boîtes quantiques InAs/InP, qui est un système très prometteur pour les télécommunications. Ces nanoparticules sont… (more)

Subjects/Keywords: Electronique; Optoélectronique; Boïtes quantiques InAs/InP; DLTS à transformée de Fourier; Processus d'émission; Electronics; OptoElectronics; InAs/InP quantum dots; DLTS Fourier transform; Emission processes; 621.381 045 072

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zouaoui, M. (2013). Etude des propriétés électroniques des boîtes quantiques InAs/InP par spectroscopie de défauts profonds (DLTS) pour des applications optoélectroniques : Study of the electronic properties of InAs/InP quantum dots by the deep levels transient spectroscopy (DLTS) for optoelectronic applications. (Doctoral Dissertation). INSA Lyon. Retrieved from http://www.theses.fr/2013ISAL0092

Chicago Manual of Style (16th Edition):

Zouaoui, Mouna. “Etude des propriétés électroniques des boîtes quantiques InAs/InP par spectroscopie de défauts profonds (DLTS) pour des applications optoélectroniques : Study of the electronic properties of InAs/InP quantum dots by the deep levels transient spectroscopy (DLTS) for optoelectronic applications.” 2013. Doctoral Dissertation, INSA Lyon. Accessed October 30, 2020. http://www.theses.fr/2013ISAL0092.

MLA Handbook (7th Edition):

Zouaoui, Mouna. “Etude des propriétés électroniques des boîtes quantiques InAs/InP par spectroscopie de défauts profonds (DLTS) pour des applications optoélectroniques : Study of the electronic properties of InAs/InP quantum dots by the deep levels transient spectroscopy (DLTS) for optoelectronic applications.” 2013. Web. 30 Oct 2020.

Vancouver:

Zouaoui M. Etude des propriétés électroniques des boîtes quantiques InAs/InP par spectroscopie de défauts profonds (DLTS) pour des applications optoélectroniques : Study of the electronic properties of InAs/InP quantum dots by the deep levels transient spectroscopy (DLTS) for optoelectronic applications. [Internet] [Doctoral dissertation]. INSA Lyon; 2013. [cited 2020 Oct 30]. Available from: http://www.theses.fr/2013ISAL0092.

Council of Science Editors:

Zouaoui M. Etude des propriétés électroniques des boîtes quantiques InAs/InP par spectroscopie de défauts profonds (DLTS) pour des applications optoélectroniques : Study of the electronic properties of InAs/InP quantum dots by the deep levels transient spectroscopy (DLTS) for optoelectronic applications. [Doctoral Dissertation]. INSA Lyon; 2013. Available from: http://www.theses.fr/2013ISAL0092

29. Soresi, Stefano. InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE.

Degree: Docteur es, Électronique, 2018, Montpellier

 Cette thèse s’intéresse à l'intégration sur Si de cellules solaires III-V à simple et double jonction par épitaxie en phase vapeur aux organo-métalliques (MOVPE). Les… (more)

Subjects/Keywords: Cellules solaires tandem; III-V/Si; Movpe; Techno; InP/InGaAs; Jonctions tunnel; Tandem solar cells; III-V/Si; Movpe; Processing; InP/InGaAs; Tunnel junctions

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APA (6th Edition):

Soresi, S. (2018). InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE. (Doctoral Dissertation). Montpellier. Retrieved from http://www.theses.fr/2018MONTS021

Chicago Manual of Style (16th Edition):

Soresi, Stefano. “InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE.” 2018. Doctoral Dissertation, Montpellier. Accessed October 30, 2020. http://www.theses.fr/2018MONTS021.

MLA Handbook (7th Edition):

Soresi, Stefano. “InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE.” 2018. Web. 30 Oct 2020.

Vancouver:

Soresi S. InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE. [Internet] [Doctoral dissertation]. Montpellier; 2018. [cited 2020 Oct 30]. Available from: http://www.theses.fr/2018MONTS021.

Council of Science Editors:

Soresi S. InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE. [Doctoral Dissertation]. Montpellier; 2018. Available from: http://www.theses.fr/2018MONTS021


University of Cincinnati

30. BALARAMAN, PRADEEP ARUGUNAM. DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS.

Degree: MS, Engineering : Electrical Engineering, 2003, University of Cincinnati

 Device modeling using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator has been used to investigate the operation and performance of InP/GaAsSb… (more)

Subjects/Keywords: InP/GaAsSb/InP; Heterojunction bipolar transistor; device physics; simulation, modeling

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APA (6th Edition):

BALARAMAN, P. A. (2003). DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786

Chicago Manual of Style (16th Edition):

BALARAMAN, PRADEEP ARUGUNAM. “DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS.” 2003. Masters Thesis, University of Cincinnati. Accessed October 30, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.

MLA Handbook (7th Edition):

BALARAMAN, PRADEEP ARUGUNAM. “DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS.” 2003. Web. 30 Oct 2020.

Vancouver:

BALARAMAN PA. DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS. [Internet] [Masters thesis]. University of Cincinnati; 2003. [cited 2020 Oct 30]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.

Council of Science Editors:

BALARAMAN PA. DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS. [Masters Thesis]. University of Cincinnati; 2003. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786

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