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You searched for subject:(InAs). Showing records 1 – 30 of 112 total matches.

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University of Toronto

1. Gutstein, David. Quantum Transport Studies of InAs Based Nanowire Devices.

Degree: 2017, University of Toronto

Experiments and analysis reported in this thesis advance the understanding of quantum transport in nanowire transistors. Indium Arsenide nanowires grown by molecular beam epitaxy were… (more)

Subjects/Keywords: Ballistic; InAs; Nanowire; Quantum; 0544

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APA (6th Edition):

Gutstein, D. (2017). Quantum Transport Studies of InAs Based Nanowire Devices. (Masters Thesis). University of Toronto. Retrieved from http://hdl.handle.net/1807/97131

Chicago Manual of Style (16th Edition):

Gutstein, David. “Quantum Transport Studies of InAs Based Nanowire Devices.” 2017. Masters Thesis, University of Toronto. Accessed February 17, 2020. http://hdl.handle.net/1807/97131.

MLA Handbook (7th Edition):

Gutstein, David. “Quantum Transport Studies of InAs Based Nanowire Devices.” 2017. Web. 17 Feb 2020.

Vancouver:

Gutstein D. Quantum Transport Studies of InAs Based Nanowire Devices. [Internet] [Masters thesis]. University of Toronto; 2017. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1807/97131.

Council of Science Editors:

Gutstein D. Quantum Transport Studies of InAs Based Nanowire Devices. [Masters Thesis]. University of Toronto; 2017. Available from: http://hdl.handle.net/1807/97131


University of Illinois – Chicago

2. Brown, Alexander E. Application of Mobility Spectrum Analysis to Modern Multi-layered IR Device Material.

Degree: 2016, University of Illinois – Chicago

 Modern detector materials used for infrared (IR) imaging purposes contain complex multi-layered architectures, making more robust characterization techniques necessary. In order to determine mutli-carrier transport… (more)

Subjects/Keywords: Mobility Spectrum Analysis; Infrared; Transport; HgCdTe; InAs/GaSb; InAs/InAsSb

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APA (6th Edition):

Brown, A. E. (2016). Application of Mobility Spectrum Analysis to Modern Multi-layered IR Device Material. (Thesis). University of Illinois – Chicago. Retrieved from http://hdl.handle.net/10027/20187

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Brown, Alexander E. “Application of Mobility Spectrum Analysis to Modern Multi-layered IR Device Material.” 2016. Thesis, University of Illinois – Chicago. Accessed February 17, 2020. http://hdl.handle.net/10027/20187.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Brown, Alexander E. “Application of Mobility Spectrum Analysis to Modern Multi-layered IR Device Material.” 2016. Web. 17 Feb 2020.

Vancouver:

Brown AE. Application of Mobility Spectrum Analysis to Modern Multi-layered IR Device Material. [Internet] [Thesis]. University of Illinois – Chicago; 2016. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/10027/20187.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Brown AE. Application of Mobility Spectrum Analysis to Modern Multi-layered IR Device Material. [Thesis]. University of Illinois – Chicago; 2016. Available from: http://hdl.handle.net/10027/20187

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

3. Filmer, Matthew J. InAs/GaSb Tunnel Diodes.

Degree: MS, Microelectronic Engineering, 2015, Rochester Institute of Technology

  The Tunneling Field-Effect Transistor (TFET) has shown promise as a possible replacement for the MOSFET, especially in low power applications where power supplies continue… (more)

Subjects/Keywords: BaSb; III-V; InAs; Tunnel diode

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APA (6th Edition):

Filmer, M. J. (2015). InAs/GaSb Tunnel Diodes. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/8747

Chicago Manual of Style (16th Edition):

Filmer, Matthew J. “InAs/GaSb Tunnel Diodes.” 2015. Masters Thesis, Rochester Institute of Technology. Accessed February 17, 2020. https://scholarworks.rit.edu/theses/8747.

MLA Handbook (7th Edition):

Filmer, Matthew J. “InAs/GaSb Tunnel Diodes.” 2015. Web. 17 Feb 2020.

Vancouver:

Filmer MJ. InAs/GaSb Tunnel Diodes. [Internet] [Masters thesis]. Rochester Institute of Technology; 2015. [cited 2020 Feb 17]. Available from: https://scholarworks.rit.edu/theses/8747.

Council of Science Editors:

Filmer MJ. InAs/GaSb Tunnel Diodes. [Masters Thesis]. Rochester Institute of Technology; 2015. Available from: https://scholarworks.rit.edu/theses/8747


University of Rochester

4. Du, Xiaoyu. Mid-infrared InAs-based photodetectors: effects of processing and structures on dark currents.

Degree: PhD, 2018, University of Rochester

 Mid-Wave Infrared (MWIR) photodetectors based on III-V semiconductors have drawn special attention during the past decade, attributed to their lower cost and easier manufacturability. Many… (more)

Subjects/Keywords: Dark Current; InAs; MWIR; nBn; Photodetector

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APA (6th Edition):

Du, X. (2018). Mid-infrared InAs-based photodetectors: effects of processing and structures on dark currents. (Doctoral Dissertation). University of Rochester. Retrieved from http://hdl.handle.net/1802/34293

Chicago Manual of Style (16th Edition):

Du, Xiaoyu. “Mid-infrared InAs-based photodetectors: effects of processing and structures on dark currents.” 2018. Doctoral Dissertation, University of Rochester. Accessed February 17, 2020. http://hdl.handle.net/1802/34293.

MLA Handbook (7th Edition):

Du, Xiaoyu. “Mid-infrared InAs-based photodetectors: effects of processing and structures on dark currents.” 2018. Web. 17 Feb 2020.

Vancouver:

Du X. Mid-infrared InAs-based photodetectors: effects of processing and structures on dark currents. [Internet] [Doctoral dissertation]. University of Rochester; 2018. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1802/34293.

Council of Science Editors:

Du X. Mid-infrared InAs-based photodetectors: effects of processing and structures on dark currents. [Doctoral Dissertation]. University of Rochester; 2018. Available from: http://hdl.handle.net/1802/34293


University of Notre Dame

5. Yeqing Lu. Design and Fabrication of Vertical Tunnel Transistors for Low-Power Logic Applications</h1>.

Degree: PhD, Electrical Engineering, 2015, University of Notre Dame

  Interband tunneling field effect transistors (TFETs) have come under intensive investigation for logic applications due to their promise for enabling low VDD operation because… (more)

Subjects/Keywords: AlGaSb; InAs; tunneling; Tunnel FET; TFET

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APA (6th Edition):

Lu, Y. (2015). Design and Fabrication of Vertical Tunnel Transistors for Low-Power Logic Applications</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/5q47rn31x7h

Chicago Manual of Style (16th Edition):

Lu, Yeqing. “Design and Fabrication of Vertical Tunnel Transistors for Low-Power Logic Applications</h1>.” 2015. Doctoral Dissertation, University of Notre Dame. Accessed February 17, 2020. https://curate.nd.edu/show/5q47rn31x7h.

MLA Handbook (7th Edition):

Lu, Yeqing. “Design and Fabrication of Vertical Tunnel Transistors for Low-Power Logic Applications</h1>.” 2015. Web. 17 Feb 2020.

Vancouver:

Lu Y. Design and Fabrication of Vertical Tunnel Transistors for Low-Power Logic Applications</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2015. [cited 2020 Feb 17]. Available from: https://curate.nd.edu/show/5q47rn31x7h.

Council of Science Editors:

Lu Y. Design and Fabrication of Vertical Tunnel Transistors for Low-Power Logic Applications</h1>. [Doctoral Dissertation]. University of Notre Dame; 2015. Available from: https://curate.nd.edu/show/5q47rn31x7h


University of California – Berkeley

6. Chuang, Steven. Low Dimensional Materials for Next Generation Electronics.

Degree: Electrical Engineering, 2014, University of California – Berkeley

 Ever since the invention of the transistor, aggressive channel length scaling has been pursued to achieve higher performance and greater packing density. In order to… (more)

Subjects/Keywords: Electrical engineering; InAs; InAsSb; MoS2; Nanowire; WSe2

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APA (6th Edition):

Chuang, S. (2014). Low Dimensional Materials for Next Generation Electronics. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/6h93r174

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chuang, Steven. “Low Dimensional Materials for Next Generation Electronics.” 2014. Thesis, University of California – Berkeley. Accessed February 17, 2020. http://www.escholarship.org/uc/item/6h93r174.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chuang, Steven. “Low Dimensional Materials for Next Generation Electronics.” 2014. Web. 17 Feb 2020.

Vancouver:

Chuang S. Low Dimensional Materials for Next Generation Electronics. [Internet] [Thesis]. University of California – Berkeley; 2014. [cited 2020 Feb 17]. Available from: http://www.escholarship.org/uc/item/6h93r174.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chuang S. Low Dimensional Materials for Next Generation Electronics. [Thesis]. University of California – Berkeley; 2014. Available from: http://www.escholarship.org/uc/item/6h93r174

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Harvard University

7. Chang, Willy. Superconducting Proximity Effect in InAs Nanowires.

Degree: PhD, Physics, 2014, Harvard University

First discovered by Holm and Meissner in 1932, the superconducting proximity effect has remained a subject of experimental and theoretical interest. In recent years, it… (more)

Subjects/Keywords: Physics; InAs nanowires; Proximity effect; Superconductivity

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APA (6th Edition):

Chang, W. (2014). Superconducting Proximity Effect in InAs Nanowires. (Doctoral Dissertation). Harvard University. Retrieved from http://nrs.harvard.edu/urn-3:HUL.InstRepos:13070025

Chicago Manual of Style (16th Edition):

Chang, Willy. “Superconducting Proximity Effect in InAs Nanowires.” 2014. Doctoral Dissertation, Harvard University. Accessed February 17, 2020. http://nrs.harvard.edu/urn-3:HUL.InstRepos:13070025.

MLA Handbook (7th Edition):

Chang, Willy. “Superconducting Proximity Effect in InAs Nanowires.” 2014. Web. 17 Feb 2020.

Vancouver:

Chang W. Superconducting Proximity Effect in InAs Nanowires. [Internet] [Doctoral dissertation]. Harvard University; 2014. [cited 2020 Feb 17]. Available from: http://nrs.harvard.edu/urn-3:HUL.InstRepos:13070025.

Council of Science Editors:

Chang W. Superconducting Proximity Effect in InAs Nanowires. [Doctoral Dissertation]. Harvard University; 2014. Available from: http://nrs.harvard.edu/urn-3:HUL.InstRepos:13070025


Vanderbilt University

8. DasGupta, Sandeepan. DC and small signal degradation in InAs - AlSb HEMTs under hot carrier stress.

Degree: PhD, Electrical Engineering, 2010, Vanderbilt University

 Indium Arsenide (InAs) channel High Electron Mobility Transistors (HEMTs) with Aluminium Antimonide (AlSb) barriers are an exciting option for low power RF applications due to… (more)

Subjects/Keywords: Hot Carrier; HEMT; InAs - AlSb; Reliability

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APA (6th Edition):

DasGupta, S. (2010). DC and small signal degradation in InAs - AlSb HEMTs under hot carrier stress. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11292010-120836/ ;

Chicago Manual of Style (16th Edition):

DasGupta, Sandeepan. “DC and small signal degradation in InAs - AlSb HEMTs under hot carrier stress.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed February 17, 2020. http://etd.library.vanderbilt.edu/available/etd-11292010-120836/ ;.

MLA Handbook (7th Edition):

DasGupta, Sandeepan. “DC and small signal degradation in InAs - AlSb HEMTs under hot carrier stress.” 2010. Web. 17 Feb 2020.

Vancouver:

DasGupta S. DC and small signal degradation in InAs - AlSb HEMTs under hot carrier stress. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2020 Feb 17]. Available from: http://etd.library.vanderbilt.edu/available/etd-11292010-120836/ ;.

Council of Science Editors:

DasGupta S. DC and small signal degradation in InAs - AlSb HEMTs under hot carrier stress. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-11292010-120836/ ;


University of Waterloo

9. Wang, Xueren. InAs/AlSb Based Mid-Infrared QCL Growth and XRD Simulation.

Degree: 2016, University of Waterloo

 In the past two decades, mid-infrared (MIR) quantum cascade laser (QCL) research has been rapidly developed and has resulted in an enabling platform for the… (more)

Subjects/Keywords: InAs/AlSb; Mid-infrared QCL; XRD

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APA (6th Edition):

Wang, X. (2016). InAs/AlSb Based Mid-Infrared QCL Growth and XRD Simulation. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/10677

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Xueren. “InAs/AlSb Based Mid-Infrared QCL Growth and XRD Simulation.” 2016. Thesis, University of Waterloo. Accessed February 17, 2020. http://hdl.handle.net/10012/10677.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Xueren. “InAs/AlSb Based Mid-Infrared QCL Growth and XRD Simulation.” 2016. Web. 17 Feb 2020.

Vancouver:

Wang X. InAs/AlSb Based Mid-Infrared QCL Growth and XRD Simulation. [Internet] [Thesis]. University of Waterloo; 2016. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/10012/10677.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang X. InAs/AlSb Based Mid-Infrared QCL Growth and XRD Simulation. [Thesis]. University of Waterloo; 2016. Available from: http://hdl.handle.net/10012/10677

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Iowa

10. Murray, Lee Michael. Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices.

Degree: PhD, Physics, 2012, University of Iowa

InAs/GaSb superlattices are a material system well suited to growth via molecular beam epitaxy. The ability to tune the band gap over the entire… (more)

Subjects/Keywords: Epitaxy; GaSb; InAs/GaSb; MBE; Superlattice; Physics

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APA (6th Edition):

Murray, L. M. (2012). Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices. (Doctoral Dissertation). University of Iowa. Retrieved from https://ir.uiowa.edu/etd/5029

Chicago Manual of Style (16th Edition):

Murray, Lee Michael. “Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices.” 2012. Doctoral Dissertation, University of Iowa. Accessed February 17, 2020. https://ir.uiowa.edu/etd/5029.

MLA Handbook (7th Edition):

Murray, Lee Michael. “Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices.” 2012. Web. 17 Feb 2020.

Vancouver:

Murray LM. Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices. [Internet] [Doctoral dissertation]. University of Iowa; 2012. [cited 2020 Feb 17]. Available from: https://ir.uiowa.edu/etd/5029.

Council of Science Editors:

Murray LM. Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices. [Doctoral Dissertation]. University of Iowa; 2012. Available from: https://ir.uiowa.edu/etd/5029


Vilnius University

11. Molis, Gediminas. Terahercinių impulsų, generuojamų siauratarpių puslaidininkių paviršiuje, tyrimas.

Degree: Dissertation, Physics, 2010, Vilnius University

THz spinduliuotės generavimas iš puslaidininkių paviršiaus turi didelį potencialą puslaidininkių fizikinėms savybėms tirti. Šis darbas skiriamas puslaidininkių tyrimams generuojant THz impulsus iš jų paviršių, apšviestų… (more)

Subjects/Keywords: THz; InAs; CdHgTe; InGaAs; Žadinimo spektroskopija; THz; InAs; CdHgTe; InGaAs; Excitation spectroscopy

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APA (6th Edition):

Molis, Gediminas. (2010). Terahercinių impulsų, generuojamų siauratarpių puslaidininkių paviršiuje, tyrimas. (Doctoral Dissertation). Vilnius University. Retrieved from http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100623_093641-79263 ;

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

Molis, Gediminas. “Terahercinių impulsų, generuojamų siauratarpių puslaidininkių paviršiuje, tyrimas.” 2010. Doctoral Dissertation, Vilnius University. Accessed February 17, 2020. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100623_093641-79263 ;.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

Molis, Gediminas. “Terahercinių impulsų, generuojamų siauratarpių puslaidininkių paviršiuje, tyrimas.” 2010. Web. 17 Feb 2020.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

Molis, Gediminas. Terahercinių impulsų, generuojamų siauratarpių puslaidininkių paviršiuje, tyrimas. [Internet] [Doctoral dissertation]. Vilnius University; 2010. [cited 2020 Feb 17]. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100623_093641-79263 ;.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

Molis, Gediminas. Terahercinių impulsų, generuojamų siauratarpių puslaidininkių paviršiuje, tyrimas. [Doctoral Dissertation]. Vilnius University; 2010. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100623_093641-79263 ;

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


Vilnius University

12. Molis, Gediminas. Investigation of the terahertz pulse generation from the narrow band gap semiconductor surfaces.

Degree: PhD, Physics, 2010, Vilnius University

Generation of terahertz radiation from semiconductor surfaces has great potential for investigation of physical properties of semiconductors. This work focuses on the semiconductor research when… (more)

Subjects/Keywords: THz; InAs; InGaAs; CdHgTe; Excitation spectroscopy; THz; InAs; InGaAs; CdHgTe; Žadinimo spektroskopija

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APA (6th Edition):

Molis, Gediminas. (2010). Investigation of the terahertz pulse generation from the narrow band gap semiconductor surfaces. (Doctoral Dissertation). Vilnius University. Retrieved from http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100623_093655-47390 ;

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

Molis, Gediminas. “Investigation of the terahertz pulse generation from the narrow band gap semiconductor surfaces.” 2010. Doctoral Dissertation, Vilnius University. Accessed February 17, 2020. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100623_093655-47390 ;.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

Molis, Gediminas. “Investigation of the terahertz pulse generation from the narrow band gap semiconductor surfaces.” 2010. Web. 17 Feb 2020.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

Molis, Gediminas. Investigation of the terahertz pulse generation from the narrow band gap semiconductor surfaces. [Internet] [Doctoral dissertation]. Vilnius University; 2010. [cited 2020 Feb 17]. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100623_093655-47390 ;.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

Molis, Gediminas. Investigation of the terahertz pulse generation from the narrow band gap semiconductor surfaces. [Doctoral Dissertation]. Vilnius University; 2010. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20100623_093655-47390 ;

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

13. Khelifi, Rim. Synthèse par faisceaux d'ions de nanocristaux semi-conducteurs fonctionnels en technologie silicium : Ion beam synthesis of functional semiconductor nanocrystals in silicon technology.

Degree: Docteur es, Physique et technologie des composants, 2015, Université de Strasbourg

Les boîtes quantiques sous formes de nanocristaux semi-conducteurs permettent de réaliser des matériaux à énergie de gap variable, propriété très intéressante pour les composants optoélectroniques.… (more)

Subjects/Keywords: Silicium; InAs; GaAs; InxGa1-xAs; Nanocristaux; Dopage; Silicon; InAs; GaAs; InxGa1-xAs; Nanocrystals; Doping; 621.38

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APA (6th Edition):

Khelifi, R. (2015). Synthèse par faisceaux d'ions de nanocristaux semi-conducteurs fonctionnels en technologie silicium : Ion beam synthesis of functional semiconductor nanocrystals in silicon technology. (Doctoral Dissertation). Université de Strasbourg. Retrieved from http://www.theses.fr/2015STRAD006

Chicago Manual of Style (16th Edition):

Khelifi, Rim. “Synthèse par faisceaux d'ions de nanocristaux semi-conducteurs fonctionnels en technologie silicium : Ion beam synthesis of functional semiconductor nanocrystals in silicon technology.” 2015. Doctoral Dissertation, Université de Strasbourg. Accessed February 17, 2020. http://www.theses.fr/2015STRAD006.

MLA Handbook (7th Edition):

Khelifi, Rim. “Synthèse par faisceaux d'ions de nanocristaux semi-conducteurs fonctionnels en technologie silicium : Ion beam synthesis of functional semiconductor nanocrystals in silicon technology.” 2015. Web. 17 Feb 2020.

Vancouver:

Khelifi R. Synthèse par faisceaux d'ions de nanocristaux semi-conducteurs fonctionnels en technologie silicium : Ion beam synthesis of functional semiconductor nanocrystals in silicon technology. [Internet] [Doctoral dissertation]. Université de Strasbourg; 2015. [cited 2020 Feb 17]. Available from: http://www.theses.fr/2015STRAD006.

Council of Science Editors:

Khelifi R. Synthèse par faisceaux d'ions de nanocristaux semi-conducteurs fonctionnels en technologie silicium : Ion beam synthesis of functional semiconductor nanocrystals in silicon technology. [Doctoral Dissertation]. Université de Strasbourg; 2015. Available from: http://www.theses.fr/2015STRAD006


Vilnius University

14. Devenson, Jan. InAs/AlSb short wavelength quantum cascade lasers.

Degree: Dissertation, Physics, 2010, Vilnius University

Application of InAs/AlSb materials system for development of short-wavelength quantum cascade lasers is explored. Molecular beam epitaxy (MBE) technology allowing to grow multiperiodical unstrained InAs/AlSb… (more)

Subjects/Keywords: QCL; Quantum cascade lasers; InAs/AlSb; Kvantiniai kaskadiniai lazeriai; InAs/AlSb; Puslaidininkiniai lazeriai

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APA (6th Edition):

Devenson, J. (2010). InAs/AlSb short wavelength quantum cascade lasers. (Doctoral Dissertation). Vilnius University. Retrieved from http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101102_153710-37964 ;

Chicago Manual of Style (16th Edition):

Devenson, Jan. “InAs/AlSb short wavelength quantum cascade lasers.” 2010. Doctoral Dissertation, Vilnius University. Accessed February 17, 2020. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101102_153710-37964 ;.

MLA Handbook (7th Edition):

Devenson, Jan. “InAs/AlSb short wavelength quantum cascade lasers.” 2010. Web. 17 Feb 2020.

Vancouver:

Devenson J. InAs/AlSb short wavelength quantum cascade lasers. [Internet] [Doctoral dissertation]. Vilnius University; 2010. [cited 2020 Feb 17]. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101102_153710-37964 ;.

Council of Science Editors:

Devenson J. InAs/AlSb short wavelength quantum cascade lasers. [Doctoral Dissertation]. Vilnius University; 2010. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101102_153710-37964 ;


Vilnius University

15. Devenson, Jan. Trumpabangiai InAs/AlSb kvantiniai kaskadiniai lazeriai.

Degree: PhD, Physics, 2010, Vilnius University

Disertaciniame darbe nagrinėjamas InAs/AlSb medžiagų sistemos panaudojimas trumpabangių tarppajuostinių lazerių kūrimui. Buvo išplėtota molekulinių pluoštelių epitaksijos technologija, leidžianti auginti daugiaperiodines neįtemptas InAs/AlSb heterosandūras su mažu… (more)

Subjects/Keywords: Kvantiniai kaskadiniai lazeriai; Puslaidininkiniai lazeriai; InAs/AlSb; QCL; InAs/AlSb; Quantum cascade lasers

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APA (6th Edition):

Devenson, J. (2010). Trumpabangiai InAs/AlSb kvantiniai kaskadiniai lazeriai. (Doctoral Dissertation). Vilnius University. Retrieved from http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101102_153721-11993 ;

Chicago Manual of Style (16th Edition):

Devenson, Jan. “Trumpabangiai InAs/AlSb kvantiniai kaskadiniai lazeriai.” 2010. Doctoral Dissertation, Vilnius University. Accessed February 17, 2020. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101102_153721-11993 ;.

MLA Handbook (7th Edition):

Devenson, Jan. “Trumpabangiai InAs/AlSb kvantiniai kaskadiniai lazeriai.” 2010. Web. 17 Feb 2020.

Vancouver:

Devenson J. Trumpabangiai InAs/AlSb kvantiniai kaskadiniai lazeriai. [Internet] [Doctoral dissertation]. Vilnius University; 2010. [cited 2020 Feb 17]. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101102_153721-11993 ;.

Council of Science Editors:

Devenson J. Trumpabangiai InAs/AlSb kvantiniai kaskadiniai lazeriai. [Doctoral Dissertation]. Vilnius University; 2010. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101102_153721-11993 ;

16. Erika Nascimento Lima. Estudo das propriedades eletrônicas de nanofios de InAs.

Degree: 2010, Federal University of Uberlândia

The main goal of our research are the III-V semiconductors, especially the InAs nanowires and their nanoelectronics properties and applications. We have used computational methods… (more)

Subjects/Keywords: Teoria do funcional da densidade; Nanofios de InAs; FISICA; Semicondutores; Nanofios; Density functional theory; InAs nanowires

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lima, E. N. (2010). Estudo das propriedades eletrônicas de nanofios de InAs. (Thesis). Federal University of Uberlândia. Retrieved from http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=3115

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lima, Erika Nascimento. “Estudo das propriedades eletrônicas de nanofios de InAs.” 2010. Thesis, Federal University of Uberlândia. Accessed February 17, 2020. http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=3115.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lima, Erika Nascimento. “Estudo das propriedades eletrônicas de nanofios de InAs.” 2010. Web. 17 Feb 2020.

Vancouver:

Lima EN. Estudo das propriedades eletrônicas de nanofios de InAs. [Internet] [Thesis]. Federal University of Uberlândia; 2010. [cited 2020 Feb 17]. Available from: http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=3115.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lima EN. Estudo das propriedades eletrônicas de nanofios de InAs. [Thesis]. Federal University of Uberlândia; 2010. Available from: http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=3115

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Lund

17. Dalelkhan, Bekmurat. Charge transport in III-V narrow bandgap semiconductor nanowires.

Degree: 2019, University of Lund

 This thesis describes charge transport in III-V narrow bandgap semiconductor nanowires. We are particularly interested in quantum transport in InSb, InAs and InP-InAs core-shell nanowires.… (more)

Subjects/Keywords: Natural Sciences; Engineering and Technology; InAs; InSb; InP-InAs; narrow bandgap; spin-orbit interaction; quantum dots; Nanowires; Fysicumarkivet A:2019:Dalelkhan

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APA (6th Edition):

Dalelkhan, B. (2019). Charge transport in III-V narrow bandgap semiconductor nanowires. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/c8122738-3ab1-4010-a33e-01263e2cf1a5 ; https://portal.research.lu.se/ws/files/63059296/Charge_transport_in_III_V_narrow_bandgap_semiconductor_nanowires.pdf

Chicago Manual of Style (16th Edition):

Dalelkhan, Bekmurat. “Charge transport in III-V narrow bandgap semiconductor nanowires.” 2019. Doctoral Dissertation, University of Lund. Accessed February 17, 2020. https://lup.lub.lu.se/record/c8122738-3ab1-4010-a33e-01263e2cf1a5 ; https://portal.research.lu.se/ws/files/63059296/Charge_transport_in_III_V_narrow_bandgap_semiconductor_nanowires.pdf.

MLA Handbook (7th Edition):

Dalelkhan, Bekmurat. “Charge transport in III-V narrow bandgap semiconductor nanowires.” 2019. Web. 17 Feb 2020.

Vancouver:

Dalelkhan B. Charge transport in III-V narrow bandgap semiconductor nanowires. [Internet] [Doctoral dissertation]. University of Lund; 2019. [cited 2020 Feb 17]. Available from: https://lup.lub.lu.se/record/c8122738-3ab1-4010-a33e-01263e2cf1a5 ; https://portal.research.lu.se/ws/files/63059296/Charge_transport_in_III_V_narrow_bandgap_semiconductor_nanowires.pdf.

Council of Science Editors:

Dalelkhan B. Charge transport in III-V narrow bandgap semiconductor nanowires. [Doctoral Dissertation]. University of Lund; 2019. Available from: https://lup.lub.lu.se/record/c8122738-3ab1-4010-a33e-01263e2cf1a5 ; https://portal.research.lu.se/ws/files/63059296/Charge_transport_in_III_V_narrow_bandgap_semiconductor_nanowires.pdf

18. Dhungana, Daya Sagar. Growth of InAs and Bi1-xSBx nanowires on silicon for nanoelectronics and topological qubits by molecular beam epitaxy : Croissance de nanofils InAs et Bi1-xSbx par épitaxie par jet moléculaire pour des applications nanoélectriques et Qubits topologiques.

Degree: Docteur es, Micro et Nanosystèmes, 2018, Université Toulouse III – Paul Sabatier

Grâce à leur propriétés uniques, les nanofils d'InAs et de Bi1-xSbx sont important pour les domaines de la nanoélectronique et de l'informatique quantique. Alors que… (more)

Subjects/Keywords: EJM; Nanofils; InAs; BiSb; Autocatalysée; Compatibilité CMOS; Isolant topologique 3D; MBE; Nanowires; InAs; BiSb; Self-catalyzed; CMOS compatible; 3D topological insulator

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Dhungana, D. S. (2018). Growth of InAs and Bi1-xSBx nanowires on silicon for nanoelectronics and topological qubits by molecular beam epitaxy : Croissance de nanofils InAs et Bi1-xSbx par épitaxie par jet moléculaire pour des applications nanoélectriques et Qubits topologiques. (Doctoral Dissertation). Université Toulouse III – Paul Sabatier. Retrieved from http://www.theses.fr/2018TOU30150

Chicago Manual of Style (16th Edition):

Dhungana, Daya Sagar. “Growth of InAs and Bi1-xSBx nanowires on silicon for nanoelectronics and topological qubits by molecular beam epitaxy : Croissance de nanofils InAs et Bi1-xSbx par épitaxie par jet moléculaire pour des applications nanoélectriques et Qubits topologiques.” 2018. Doctoral Dissertation, Université Toulouse III – Paul Sabatier. Accessed February 17, 2020. http://www.theses.fr/2018TOU30150.

MLA Handbook (7th Edition):

Dhungana, Daya Sagar. “Growth of InAs and Bi1-xSBx nanowires on silicon for nanoelectronics and topological qubits by molecular beam epitaxy : Croissance de nanofils InAs et Bi1-xSbx par épitaxie par jet moléculaire pour des applications nanoélectriques et Qubits topologiques.” 2018. Web. 17 Feb 2020.

Vancouver:

Dhungana DS. Growth of InAs and Bi1-xSBx nanowires on silicon for nanoelectronics and topological qubits by molecular beam epitaxy : Croissance de nanofils InAs et Bi1-xSbx par épitaxie par jet moléculaire pour des applications nanoélectriques et Qubits topologiques. [Internet] [Doctoral dissertation]. Université Toulouse III – Paul Sabatier; 2018. [cited 2020 Feb 17]. Available from: http://www.theses.fr/2018TOU30150.

Council of Science Editors:

Dhungana DS. Growth of InAs and Bi1-xSBx nanowires on silicon for nanoelectronics and topological qubits by molecular beam epitaxy : Croissance de nanofils InAs et Bi1-xSbx par épitaxie par jet moléculaire pour des applications nanoélectriques et Qubits topologiques. [Doctoral Dissertation]. Université Toulouse III – Paul Sabatier; 2018. Available from: http://www.theses.fr/2018TOU30150

19. Knuuttila, Lauri. Growth and Properties of Compound Semiconductors on Germanium Substrate.

Degree: 2006, Helsinki University of Technology

 The aim of this thesis is to investigate the growth and characterisation of compound semiconductors on germanium (Ge) substrates. Also properties of detector applications and… (more)

Subjects/Keywords: Ge substrate; GaAs; GaInNAs; InAs; quantum well; quantum dot; compound semiconductor

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APA (6th Edition):

Knuuttila, L. (2006). Growth and Properties of Compound Semiconductors on Germanium Substrate. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2006/isbn9512281104/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Knuuttila, Lauri. “Growth and Properties of Compound Semiconductors on Germanium Substrate.” 2006. Thesis, Helsinki University of Technology. Accessed February 17, 2020. http://lib.tkk.fi/Diss/2006/isbn9512281104/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Knuuttila, Lauri. “Growth and Properties of Compound Semiconductors on Germanium Substrate.” 2006. Web. 17 Feb 2020.

Vancouver:

Knuuttila L. Growth and Properties of Compound Semiconductors on Germanium Substrate. [Internet] [Thesis]. Helsinki University of Technology; 2006. [cited 2020 Feb 17]. Available from: http://lib.tkk.fi/Diss/2006/isbn9512281104/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Knuuttila L. Growth and Properties of Compound Semiconductors on Germanium Substrate. [Thesis]. Helsinki University of Technology; 2006. Available from: http://lib.tkk.fi/Diss/2006/isbn9512281104/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

20. Bambery, Rohan. Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications.

Degree: MS, 1200, 2011, University of Illinois – Urbana-Champaign

 Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material… (more)

Subjects/Keywords: High Electron Mobility Transistor (HEMT); Aluminium Antimonide (AlSb); Indium Arsenide (InAs)

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APA (6th Edition):

Bambery, R. (2011). Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18297

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bambery, Rohan. “Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications.” 2011. Thesis, University of Illinois – Urbana-Champaign. Accessed February 17, 2020. http://hdl.handle.net/2142/18297.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bambery, Rohan. “Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications.” 2011. Web. 17 Feb 2020.

Vancouver:

Bambery R. Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2011. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/2142/18297.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bambery R. Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications. [Thesis]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18297

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Rochester

21. Pedrazzani, Janet Renee (1970 - ). Characteristics of InAs-based nBn photodetectors grown by molecular beam epitaxy.

Degree: PhD, 2010, University of Rochester

 The nBn photodetector design specifies an n-type absorption layer, a Barrier layer to majority carrier electrons, and an n-type contact layer. The absence of a… (more)

Subjects/Keywords: InAs; AIAsSb; MWIR; nBn; Photodetector; Diffusion length; Surface leakage current

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APA (6th Edition):

Pedrazzani, J. R. (. -. ). (2010). Characteristics of InAs-based nBn photodetectors grown by molecular beam epitaxy. (Doctoral Dissertation). University of Rochester. Retrieved from http://hdl.handle.net/1802/12773

Chicago Manual of Style (16th Edition):

Pedrazzani, Janet Renee (1970 - ). “Characteristics of InAs-based nBn photodetectors grown by molecular beam epitaxy.” 2010. Doctoral Dissertation, University of Rochester. Accessed February 17, 2020. http://hdl.handle.net/1802/12773.

MLA Handbook (7th Edition):

Pedrazzani, Janet Renee (1970 - ). “Characteristics of InAs-based nBn photodetectors grown by molecular beam epitaxy.” 2010. Web. 17 Feb 2020.

Vancouver:

Pedrazzani JR(-). Characteristics of InAs-based nBn photodetectors grown by molecular beam epitaxy. [Internet] [Doctoral dissertation]. University of Rochester; 2010. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1802/12773.

Council of Science Editors:

Pedrazzani JR(-). Characteristics of InAs-based nBn photodetectors grown by molecular beam epitaxy. [Doctoral Dissertation]. University of Rochester; 2010. Available from: http://hdl.handle.net/1802/12773


University of Rochester

22. Savich, Gregory Robert (1984 - ). Analysis and suppression of dark currents in mid-wave infrared photodetectors.

Degree: PhD, 2015, University of Rochester

 Mid-wave infrared photodetectors have wide-ranging civilian and military applications but remain complicated and expensive to produce. Maximizing detector performance while also reducing costs is critical… (more)

Subjects/Keywords: MWIR; nBn; photodetector; SRH; unipolar barrier; MBE; tunneling; surface leakage; InAs

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APA (6th Edition):

Savich, G. R. (. -. ). (2015). Analysis and suppression of dark currents in mid-wave infrared photodetectors. (Doctoral Dissertation). University of Rochester. Retrieved from http://hdl.handle.net/1802/29661

Chicago Manual of Style (16th Edition):

Savich, Gregory Robert (1984 - ). “Analysis and suppression of dark currents in mid-wave infrared photodetectors.” 2015. Doctoral Dissertation, University of Rochester. Accessed February 17, 2020. http://hdl.handle.net/1802/29661.

MLA Handbook (7th Edition):

Savich, Gregory Robert (1984 - ). “Analysis and suppression of dark currents in mid-wave infrared photodetectors.” 2015. Web. 17 Feb 2020.

Vancouver:

Savich GR(-). Analysis and suppression of dark currents in mid-wave infrared photodetectors. [Internet] [Doctoral dissertation]. University of Rochester; 2015. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/1802/29661.

Council of Science Editors:

Savich GR(-). Analysis and suppression of dark currents in mid-wave infrared photodetectors. [Doctoral Dissertation]. University of Rochester; 2015. Available from: http://hdl.handle.net/1802/29661


NSYSU

23. Wang, Fu-Yun. The Study of Carrier Dynamics in Multi-Stacked InAs/GaAs Quantum Dots.

Degree: Master, Physics, 2012, NSYSU

 This paper is using the Time-resolved Pump-Probe spectroscopy to study the quantum dots samples. The samples are InAs/GaAs multi-stacked quantum dots that with different spacer… (more)

Subjects/Keywords: multi-stacked; GaAs; InAs; quantum dot; dynamics; pump-probe

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APA (6th Edition):

Wang, F. (2012). The Study of Carrier Dynamics in Multi-Stacked InAs/GaAs Quantum Dots. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808112-114247

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Fu-Yun. “The Study of Carrier Dynamics in Multi-Stacked InAs/GaAs Quantum Dots.” 2012. Thesis, NSYSU. Accessed February 17, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808112-114247.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Fu-Yun. “The Study of Carrier Dynamics in Multi-Stacked InAs/GaAs Quantum Dots.” 2012. Web. 17 Feb 2020.

Vancouver:

Wang F. The Study of Carrier Dynamics in Multi-Stacked InAs/GaAs Quantum Dots. [Internet] [Thesis]. NSYSU; 2012. [cited 2020 Feb 17]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808112-114247.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang F. The Study of Carrier Dynamics in Multi-Stacked InAs/GaAs Quantum Dots. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808112-114247

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of California – Berkeley

24. Ford, Alexandra Caroline. Dopant Profiling of III-V Nanostructures for Electronic Applications.

Degree: Materials Science & Engineering, 2011, University of California – Berkeley

 High electron mobility III-V compound semiconductors such as indium arsenide (InAs) are promising candidates for future active channel materials of electron devices to further enhance… (more)

Subjects/Keywords: Materials Science; Nanoscience; Nanotechnology; doping; FET; InAs; mobility; nanowire; ultrathin body

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APA (6th Edition):

Ford, A. C. (2011). Dopant Profiling of III-V Nanostructures for Electronic Applications. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/44b5d1w4

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ford, Alexandra Caroline. “Dopant Profiling of III-V Nanostructures for Electronic Applications.” 2011. Thesis, University of California – Berkeley. Accessed February 17, 2020. http://www.escholarship.org/uc/item/44b5d1w4.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ford, Alexandra Caroline. “Dopant Profiling of III-V Nanostructures for Electronic Applications.” 2011. Web. 17 Feb 2020.

Vancouver:

Ford AC. Dopant Profiling of III-V Nanostructures for Electronic Applications. [Internet] [Thesis]. University of California – Berkeley; 2011. [cited 2020 Feb 17]. Available from: http://www.escholarship.org/uc/item/44b5d1w4.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ford AC. Dopant Profiling of III-V Nanostructures for Electronic Applications. [Thesis]. University of California – Berkeley; 2011. Available from: http://www.escholarship.org/uc/item/44b5d1w4

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Sherbrooke

25. Dupuy, Emmanuel. Croissance et spectroscopie de boîtes quantiques diluées d'InAs/InP(001) pour des applications nanophotoniques à 1,55 [micro]m .

Degree: 2010, Université de Sherbrooke

 This thesis focus on the epitaxial growth and optical characterization of diluted InAs/InP(001) quantum dots for the realisation of new nanophotonic devices emitting at 1.55… (more)

Subjects/Keywords: CL; [micro]PL; Reconstructions de surface; MBE; InAs/InP; Boîtes quantiques

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APA (6th Edition):

Dupuy, E. (2010). Croissance et spectroscopie de boîtes quantiques diluées d'InAs/InP(001) pour des applications nanophotoniques à 1,55 [micro]m . (Doctoral Dissertation). Université de Sherbrooke. Retrieved from http://savoirs.usherbrooke.ca/handle/11143/5117

Chicago Manual of Style (16th Edition):

Dupuy, Emmanuel. “Croissance et spectroscopie de boîtes quantiques diluées d'InAs/InP(001) pour des applications nanophotoniques à 1,55 [micro]m .” 2010. Doctoral Dissertation, Université de Sherbrooke. Accessed February 17, 2020. http://savoirs.usherbrooke.ca/handle/11143/5117.

MLA Handbook (7th Edition):

Dupuy, Emmanuel. “Croissance et spectroscopie de boîtes quantiques diluées d'InAs/InP(001) pour des applications nanophotoniques à 1,55 [micro]m .” 2010. Web. 17 Feb 2020.

Vancouver:

Dupuy E. Croissance et spectroscopie de boîtes quantiques diluées d'InAs/InP(001) pour des applications nanophotoniques à 1,55 [micro]m . [Internet] [Doctoral dissertation]. Université de Sherbrooke; 2010. [cited 2020 Feb 17]. Available from: http://savoirs.usherbrooke.ca/handle/11143/5117.

Council of Science Editors:

Dupuy E. Croissance et spectroscopie de boîtes quantiques diluées d'InAs/InP(001) pour des applications nanophotoniques à 1,55 [micro]m . [Doctoral Dissertation]. Université de Sherbrooke; 2010. Available from: http://savoirs.usherbrooke.ca/handle/11143/5117


Virginia Tech

26. Zhang, Yao. Electronic Transport in Highly Mismatched InAs Films on GaAs.

Degree: MS, Electrical and Computer Engineering, 2013, Virginia Tech

 Electrical properties of Si- and Mg-doped InAs epitaxial layers grown by MOCVD were studied by performing magneto-transport measurements at different temperatures, from 300 K down… (more)

Subjects/Keywords: nucleation layer; band structure; three-band; surface accumulation layer; InAs

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APA (6th Edition):

Zhang, Y. (2013). Electronic Transport in Highly Mismatched InAs Films on GaAs. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/78064

Chicago Manual of Style (16th Edition):

Zhang, Yao. “Electronic Transport in Highly Mismatched InAs Films on GaAs.” 2013. Masters Thesis, Virginia Tech. Accessed February 17, 2020. http://hdl.handle.net/10919/78064.

MLA Handbook (7th Edition):

Zhang, Yao. “Electronic Transport in Highly Mismatched InAs Films on GaAs.” 2013. Web. 17 Feb 2020.

Vancouver:

Zhang Y. Electronic Transport in Highly Mismatched InAs Films on GaAs. [Internet] [Masters thesis]. Virginia Tech; 2013. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/10919/78064.

Council of Science Editors:

Zhang Y. Electronic Transport in Highly Mismatched InAs Films on GaAs. [Masters Thesis]. Virginia Tech; 2013. Available from: http://hdl.handle.net/10919/78064


Universitat de Valencia

27. Möller, Michael. Optical Properties of III-V Nanowires and Their Application for Charge Transport and Single-Photon Emission .

Degree: 2012, Universitat de Valencia

 This work covers the optical characterization of III-V semiconductor nanowires and their application for charge transport and for single-photon emission. InAs nanowires have been investigated… (more)

Subjects/Keywords: nanowires; photoluminescence; InAs; GaAs; Raman; SAW; surface acoustic waves; charge transport

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APA (6th Edition):

Möller, M. (2012). Optical Properties of III-V Nanowires and Their Application for Charge Transport and Single-Photon Emission . (Doctoral Dissertation). Universitat de Valencia. Retrieved from http://hdl.handle.net/10550/24432

Chicago Manual of Style (16th Edition):

Möller, Michael. “Optical Properties of III-V Nanowires and Their Application for Charge Transport and Single-Photon Emission .” 2012. Doctoral Dissertation, Universitat de Valencia. Accessed February 17, 2020. http://hdl.handle.net/10550/24432.

MLA Handbook (7th Edition):

Möller, Michael. “Optical Properties of III-V Nanowires and Their Application for Charge Transport and Single-Photon Emission .” 2012. Web. 17 Feb 2020.

Vancouver:

Möller M. Optical Properties of III-V Nanowires and Their Application for Charge Transport and Single-Photon Emission . [Internet] [Doctoral dissertation]. Universitat de Valencia; 2012. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/10550/24432.

Council of Science Editors:

Möller M. Optical Properties of III-V Nanowires and Their Application for Charge Transport and Single-Photon Emission . [Doctoral Dissertation]. Universitat de Valencia; 2012. Available from: http://hdl.handle.net/10550/24432


NSYSU

28. Chang , Che-Yu. The carrier recombination of InAs/GaAs quantum dots.

Degree: Master, Physics, 2018, NSYSU

 The purpose of this study is to examine the energy released due to excitation and recombination of single-layered and multi-layered InAs/GaAs quantum dots samples at… (more)

Subjects/Keywords: Time-Resolved Photoluminescence; InAs; Quantum dot; Lifetime; Photoluminescence

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APA (6th Edition):

Chang , C. (2018). The carrier recombination of InAs/GaAs quantum dots. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723118-132635

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang , Che-Yu. “The carrier recombination of InAs/GaAs quantum dots.” 2018. Thesis, NSYSU. Accessed February 17, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723118-132635.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang , Che-Yu. “The carrier recombination of InAs/GaAs quantum dots.” 2018. Web. 17 Feb 2020.

Vancouver:

Chang C. The carrier recombination of InAs/GaAs quantum dots. [Internet] [Thesis]. NSYSU; 2018. [cited 2020 Feb 17]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723118-132635.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang C. The carrier recombination of InAs/GaAs quantum dots. [Thesis]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723118-132635

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Waterloo

29. Fung, Jennifer Sy-Wei. Towards InAs nanowire double quantum dots for quantum information processing.

Degree: 2010, University of Waterloo

 Currently, a major challenge for solid-state spin qubit systems is achieving one-qubit operations on a timescale shorter than the spin coherence time, T2*, a goal… (more)

Subjects/Keywords: quantum dot; InAs nanowire; quantum information processing; quantum computing

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APA (6th Edition):

Fung, J. S. (2010). Towards InAs nanowire double quantum dots for quantum information processing. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/5622

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Fung, Jennifer Sy-Wei. “Towards InAs nanowire double quantum dots for quantum information processing.” 2010. Thesis, University of Waterloo. Accessed February 17, 2020. http://hdl.handle.net/10012/5622.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Fung, Jennifer Sy-Wei. “Towards InAs nanowire double quantum dots for quantum information processing.” 2010. Web. 17 Feb 2020.

Vancouver:

Fung JS. Towards InAs nanowire double quantum dots for quantum information processing. [Internet] [Thesis]. University of Waterloo; 2010. [cited 2020 Feb 17]. Available from: http://hdl.handle.net/10012/5622.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fung JS. Towards InAs nanowire double quantum dots for quantum information processing. [Thesis]. University of Waterloo; 2010. Available from: http://hdl.handle.net/10012/5622

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New South Wales

30. Zhang, Zewen. The Effect of Antimony on the Optoelectronic Properties of InAs Quantum Dots Grown by Molecular Beam Epitaxy.

Degree: Photovoltaics & Renewable Energy Engineering, 2017, University of New South Wales

 The effects on the optoelectronic properties of InAs quantum dots (QDs) due to the inclusion of Sb in the barrier layers were investigated by photoluminescence… (more)

Subjects/Keywords: Photoluminescence; InAs/GaAs quantum dots; Molecular Beam Epitaxy; Antimony treatment

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zhang, Z. (2017). The Effect of Antimony on the Optoelectronic Properties of InAs Quantum Dots Grown by Molecular Beam Epitaxy. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/60079

Chicago Manual of Style (16th Edition):

Zhang, Zewen. “The Effect of Antimony on the Optoelectronic Properties of InAs Quantum Dots Grown by Molecular Beam Epitaxy.” 2017. Doctoral Dissertation, University of New South Wales. Accessed February 17, 2020. http://handle.unsw.edu.au/1959.4/60079.

MLA Handbook (7th Edition):

Zhang, Zewen. “The Effect of Antimony on the Optoelectronic Properties of InAs Quantum Dots Grown by Molecular Beam Epitaxy.” 2017. Web. 17 Feb 2020.

Vancouver:

Zhang Z. The Effect of Antimony on the Optoelectronic Properties of InAs Quantum Dots Grown by Molecular Beam Epitaxy. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2020 Feb 17]. Available from: http://handle.unsw.edu.au/1959.4/60079.

Council of Science Editors:

Zhang Z. The Effect of Antimony on the Optoelectronic Properties of InAs Quantum Dots Grown by Molecular Beam Epitaxy. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/60079

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