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You searched for subject:(III nitrides). Showing records 1 – 30 of 51 total matches.

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University of Notre Dame

1. Satyaki Ganguly. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.

Degree: PhD, Electrical Engineering, 2014, University of Notre Dame

  Owing to the large band gap (EgGaN=3.4eV) and high electron saturation velocity, GaN based high electron mobility transistors (HEMTs) are attractive for high voltage… (more)

Subjects/Keywords: III-Nitrides; MBE

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APA (6th Edition):

Ganguly, S. (2014). High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/0c483j34v8f

Chicago Manual of Style (16th Edition):

Ganguly, Satyaki. “High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.” 2014. Doctoral Dissertation, University of Notre Dame. Accessed March 20, 2019. https://curate.nd.edu/show/0c483j34v8f.

MLA Handbook (7th Edition):

Ganguly, Satyaki. “High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.” 2014. Web. 20 Mar 2019.

Vancouver:

Ganguly S. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2014. [cited 2019 Mar 20]. Available from: https://curate.nd.edu/show/0c483j34v8f.

Council of Science Editors:

Ganguly S. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. [Doctoral Dissertation]. University of Notre Dame; 2014. Available from: https://curate.nd.edu/show/0c483j34v8f


Arizona State University

2. Hill, Arlinda. Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors.

Degree: PhD, Physics, 2011, Arizona State University

III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium… (more)

Subjects/Keywords: Physics; Materials Science; III nitrides; Semiconductors; thermodynamics

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APA (6th Edition):

Hill, A. (2011). Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/9035

Chicago Manual of Style (16th Edition):

Hill, Arlinda. “Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors.” 2011. Doctoral Dissertation, Arizona State University. Accessed March 20, 2019. http://repository.asu.edu/items/9035.

MLA Handbook (7th Edition):

Hill, Arlinda. “Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors.” 2011. Web. 20 Mar 2019.

Vancouver:

Hill A. Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors. [Internet] [Doctoral dissertation]. Arizona State University; 2011. [cited 2019 Mar 20]. Available from: http://repository.asu.edu/items/9035.

Council of Science Editors:

Hill A. Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors. [Doctoral Dissertation]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/9035


Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

3. Soumelidou, Maria-Marianna. Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας.

Degree: 2017, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

The aim of the present thesis was the study of the electronic, structural and elastic properties of III-nitrides and their alloys using both experimental techniques… (more)

Subjects/Keywords: Νιτρίδια III-V; Ατομιστική προσομοίωση; III-Nitrides; Atomistic simulations

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APA (6th Edition):

Soumelidou, M. (2017). Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας. (Thesis). Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Retrieved from http://hdl.handle.net/10442/hedi/42069

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Soumelidou, Maria-Marianna. “Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας.” 2017. Thesis, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Accessed March 20, 2019. http://hdl.handle.net/10442/hedi/42069.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Soumelidou, Maria-Marianna. “Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας.” 2017. Web. 20 Mar 2019.

Vancouver:

Soumelidou M. Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας. [Internet] [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/10442/hedi/42069.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Soumelidou M. Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας. [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. Available from: http://hdl.handle.net/10442/hedi/42069

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université Paris-Sud – Paris XI

4. Sakr, Salam. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz.

Degree: Docteur es, Physique, 2012, Université Paris-Sud – Paris XI

Les dispositifs intersousbandes à base de nitrures d’éléments III ont des propriétés très intéressantes pour l’optoélectronique et la photonique dans l’infrarouge. Les hétérostructures formées par… (more)

Subjects/Keywords: Nitrures d’éléments III; Intersousbandes; Infrarouge; III-nitrides; Intersubband; Infrared

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APA (6th Edition):

Sakr, S. (2012). Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2012PA112207

Chicago Manual of Style (16th Edition):

Sakr, Salam. “Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz.” 2012. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed March 20, 2019. http://www.theses.fr/2012PA112207.

MLA Handbook (7th Edition):

Sakr, Salam. “Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz.” 2012. Web. 20 Mar 2019.

Vancouver:

Sakr S. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2012. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2012PA112207.

Council of Science Editors:

Sakr S. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2012. Available from: http://www.theses.fr/2012PA112207


University of Illinois – Urbana-Champaign

5. Su, Guan-Lin. Modeling of devices for gallium-nitride-based integrated photonics.

Degree: PhD, Electrical & Computer Engr, 2016, University of Illinois – Urbana-Champaign

 Credited as "the most important semiconductor since silicon (Si)," gallium nitride (GaN) has received a tremendous amount of attention during the past two decades due… (more)

Subjects/Keywords: III-Nitrides (III-Ns); Self-assembled quantum dots (SAQDs); Integrated photonics

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APA (6th Edition):

Su, G. (2016). Modeling of devices for gallium-nitride-based integrated photonics. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/92916

Chicago Manual of Style (16th Edition):

Su, Guan-Lin. “Modeling of devices for gallium-nitride-based integrated photonics.” 2016. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed March 20, 2019. http://hdl.handle.net/2142/92916.

MLA Handbook (7th Edition):

Su, Guan-Lin. “Modeling of devices for gallium-nitride-based integrated photonics.” 2016. Web. 20 Mar 2019.

Vancouver:

Su G. Modeling of devices for gallium-nitride-based integrated photonics. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2016. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/2142/92916.

Council of Science Editors:

Su G. Modeling of devices for gallium-nitride-based integrated photonics. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/92916


Université de Lorraine

6. Li, Xin. Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.

Degree: Docteur es, Physique, 2015, Université de Lorraine

Le contexte de cette thèse se situe dans les nombreuses applications de sources UV tels que la stérilisation et la purification. Comparés aux sources conventionnelles,… (more)

Subjects/Keywords: VCSEL; DBR; DUV; MOVPE; III-Nitrures; VCSEL; DBR; DUV; MOVPE; III nitrides; 537.622; 621.36

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APA (6th Edition):

Li, X. (2015). Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. (Doctoral Dissertation). Université de Lorraine. Retrieved from http://www.theses.fr/2015LORR0243

Chicago Manual of Style (16th Edition):

Li, Xin. “Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2015. Doctoral Dissertation, Université de Lorraine. Accessed March 20, 2019. http://www.theses.fr/2015LORR0243.

MLA Handbook (7th Edition):

Li, Xin. “Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2015. Web. 20 Mar 2019.

Vancouver:

Li X. Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Internet] [Doctoral dissertation]. Université de Lorraine; 2015. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2015LORR0243.

Council of Science Editors:

Li X. Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Doctoral Dissertation]. Université de Lorraine; 2015. Available from: http://www.theses.fr/2015LORR0243

7. VANDEMAELE, MICHIEL. Numerical simulation of InN based HEMTs.

Degree: 2015, Chalmers University of Technology

 Invented in 1980, High Electron Mobility Transistors(HEMTs) are now widely used in high-frequency electronics. They are fabricated in different material systems and a possible new… (more)

Subjects/Keywords: indium nitride (InN); III-nitrides; HEMT; numerical simulations; TCAD

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APA (6th Edition):

VANDEMAELE, M. (2015). Numerical simulation of InN based HEMTs. (Thesis). Chalmers University of Technology. Retrieved from http://studentarbeten.chalmers.se/publication/218658-numerical-simulation-of-inn-based-hemts

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

VANDEMAELE, MICHIEL. “Numerical simulation of InN based HEMTs.” 2015. Thesis, Chalmers University of Technology. Accessed March 20, 2019. http://studentarbeten.chalmers.se/publication/218658-numerical-simulation-of-inn-based-hemts.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

VANDEMAELE, MICHIEL. “Numerical simulation of InN based HEMTs.” 2015. Web. 20 Mar 2019.

Vancouver:

VANDEMAELE M. Numerical simulation of InN based HEMTs. [Internet] [Thesis]. Chalmers University of Technology; 2015. [cited 2019 Mar 20]. Available from: http://studentarbeten.chalmers.se/publication/218658-numerical-simulation-of-inn-based-hemts.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

VANDEMAELE M. Numerical simulation of InN based HEMTs. [Thesis]. Chalmers University of Technology; 2015. Available from: http://studentarbeten.chalmers.se/publication/218658-numerical-simulation-of-inn-based-hemts

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

8. Koukoula, Triantafyllia. Structural properties and phenomena in low-dimensional III-N compound semiconductors.

Degree: 2015, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

This thesis concerns the study of the structural properties and phenomena in low-dimensional III-Nitride compound semiconductors by means of Transmission electron microscopy (TEM). TEM techniques… (more)

Subjects/Keywords: Νιτρίδια; Ηλεκτρονική μικροσκοπία διέλευσης; Νανοδομές; III-Nitrides; Transmision electron microscopy; Nanostructures

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APA (6th Edition):

Koukoula, T. (2015). Structural properties and phenomena in low-dimensional III-N compound semiconductors. (Thesis). Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Retrieved from http://hdl.handle.net/10442/hedi/35396

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Koukoula, Triantafyllia. “Structural properties and phenomena in low-dimensional III-N compound semiconductors.” 2015. Thesis, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Accessed March 20, 2019. http://hdl.handle.net/10442/hedi/35396.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Koukoula, Triantafyllia. “Structural properties and phenomena in low-dimensional III-N compound semiconductors.” 2015. Web. 20 Mar 2019.

Vancouver:

Koukoula T. Structural properties and phenomena in low-dimensional III-N compound semiconductors. [Internet] [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2015. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/10442/hedi/35396.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Koukoula T. Structural properties and phenomena in low-dimensional III-N compound semiconductors. [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2015. Available from: http://hdl.handle.net/10442/hedi/35396

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

9. CHENG, YU-JUNG. Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations.

Degree: Master, Physics, 2016, NSYSU

 In this research, we grow m-plane gallium nitride on sapphire substrate using molecular beam epitaxy system, then using metal-organic chemical vapor deposition (MOCVD) to grow… (more)

Subjects/Keywords: III-V Nitrides; Molecular Beam Epitaxy (MBE); Nonpolar; Manganese; Raman spectroscopy

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APA (6th Edition):

CHENG, Y. (2016). Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

CHENG, YU-JUNG. “Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations.” 2016. Thesis, NSYSU. Accessed March 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

CHENG, YU-JUNG. “Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations.” 2016. Web. 20 Mar 2019.

Vancouver:

CHENG Y. Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Mar 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

CHENG Y. Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Lehigh University

10. Zeng, Guosong. Investigation of Wear Mechanism of Gallium Nitride.

Degree: PhD, Mechanical Engineering, 2018, Lehigh University

 The optoelectronic properties of gallium nitride (GaN) has been extensively studied for decades, which has facilitated its application in many different areas, cementing it as… (more)

Subjects/Keywords: Band Bending; III-Nitrides; Materials Tribology; Surface Chemistry; Mechanical Engineering

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APA (6th Edition):

Zeng, G. (2018). Investigation of Wear Mechanism of Gallium Nitride. (Doctoral Dissertation). Lehigh University. Retrieved from https://preserve.lehigh.edu/etd/2995

Chicago Manual of Style (16th Edition):

Zeng, Guosong. “Investigation of Wear Mechanism of Gallium Nitride.” 2018. Doctoral Dissertation, Lehigh University. Accessed March 20, 2019. https://preserve.lehigh.edu/etd/2995.

MLA Handbook (7th Edition):

Zeng, Guosong. “Investigation of Wear Mechanism of Gallium Nitride.” 2018. Web. 20 Mar 2019.

Vancouver:

Zeng G. Investigation of Wear Mechanism of Gallium Nitride. [Internet] [Doctoral dissertation]. Lehigh University; 2018. [cited 2019 Mar 20]. Available from: https://preserve.lehigh.edu/etd/2995.

Council of Science Editors:

Zeng G. Investigation of Wear Mechanism of Gallium Nitride. [Doctoral Dissertation]. Lehigh University; 2018. Available from: https://preserve.lehigh.edu/etd/2995


Kansas State University

11. Pantha, Bed Nidhi. Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation.

Degree: PhD, Department of Physics, 2009, Kansas State University

III-nitride nanostructures and devices were synthesized by metal organic chemical vapor deposition (MOCVD) for their applications in various photonic, optoelectronic, and energy devices such as… (more)

Subjects/Keywords: III-nitrides; MOCVD; Thermoelectric; InGaN; Dislocation; XRD; Physics, Condensed Matter (0611)

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APA (6th Edition):

Pantha, B. N. (2009). Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation. (Doctoral Dissertation). Kansas State University. Retrieved from http://hdl.handle.net/2097/2199

Chicago Manual of Style (16th Edition):

Pantha, Bed Nidhi. “Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation.” 2009. Doctoral Dissertation, Kansas State University. Accessed March 20, 2019. http://hdl.handle.net/2097/2199.

MLA Handbook (7th Edition):

Pantha, Bed Nidhi. “Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation.” 2009. Web. 20 Mar 2019.

Vancouver:

Pantha BN. Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation. [Internet] [Doctoral dissertation]. Kansas State University; 2009. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/2097/2199.

Council of Science Editors:

Pantha BN. Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation. [Doctoral Dissertation]. Kansas State University; 2009. Available from: http://hdl.handle.net/2097/2199


Georgia Tech

12. Li, Xin. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The context of this thesis falls in the wide applications of UV light sources such as sterilization and purification. On the material aspect, III-nitrides (BAlGaInN)… (more)

Subjects/Keywords: VCSEL; Distributed Bragg reflector; Deep UV; MOVPE; III nitrides

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APA (6th Edition):

Li, X. (2016). BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55561

Chicago Manual of Style (16th Edition):

Li, Xin. “BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2016. Doctoral Dissertation, Georgia Tech. Accessed March 20, 2019. http://hdl.handle.net/1853/55561.

MLA Handbook (7th Edition):

Li, Xin. “BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2016. Web. 20 Mar 2019.

Vancouver:

Li X. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/1853/55561.

Council of Science Editors:

Li X. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55561


Penn State University

13. Al Balushi, Zakaria. MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers.

Degree: 2017, Penn State University

 Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This… (more)

Subjects/Keywords: Group-III Nitrides; MOCVD; Thin Films; Graphene; 2D Materials

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APA (6th Edition):

Al Balushi, Z. (2017). MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers. (Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/14457zya5004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Al Balushi, Zakaria. “MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers.” 2017. Thesis, Penn State University. Accessed March 20, 2019. https://etda.libraries.psu.edu/catalog/14457zya5004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Al Balushi, Zakaria. “MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers.” 2017. Web. 20 Mar 2019.

Vancouver:

Al Balushi Z. MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers. [Internet] [Thesis]. Penn State University; 2017. [cited 2019 Mar 20]. Available from: https://etda.libraries.psu.edu/catalog/14457zya5004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Al Balushi Z. MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers. [Thesis]. Penn State University; 2017. Available from: https://etda.libraries.psu.edu/catalog/14457zya5004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

14. Jai Kishan Verma. Polarization and Band Gap Engineered III-Nitride Optoelectronic Device Structures</h1>.

Degree: PhD, Electrical Engineering, 2013, University of Notre Dame

  Immense progress has been made in III-Nitride optical devices since the demonstration of blue lasers in mid 90’s. The attention of the solid state… (more)

Subjects/Keywords: Quantum Dots; III-nitrides; UV LEDs; Tunnel Injection; Polarization

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APA (6th Edition):

Verma, J. K. (2013). Polarization and Band Gap Engineered III-Nitride Optoelectronic Device Structures</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/bn999595x4q

Chicago Manual of Style (16th Edition):

Verma, Jai Kishan. “Polarization and Band Gap Engineered III-Nitride Optoelectronic Device Structures</h1>.” 2013. Doctoral Dissertation, University of Notre Dame. Accessed March 20, 2019. https://curate.nd.edu/show/bn999595x4q.

MLA Handbook (7th Edition):

Verma, Jai Kishan. “Polarization and Band Gap Engineered III-Nitride Optoelectronic Device Structures</h1>.” 2013. Web. 20 Mar 2019.

Vancouver:

Verma JK. Polarization and Band Gap Engineered III-Nitride Optoelectronic Device Structures</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2013. [cited 2019 Mar 20]. Available from: https://curate.nd.edu/show/bn999595x4q.

Council of Science Editors:

Verma JK. Polarization and Band Gap Engineered III-Nitride Optoelectronic Device Structures</h1>. [Doctoral Dissertation]. University of Notre Dame; 2013. Available from: https://curate.nd.edu/show/bn999595x4q


Lehigh University

15. Sun, Guan. Novel Optical Study and Application on III-NItrides.

Degree: PhD, Electrical Engineering, 2013, Lehigh University

 GaN and its heterostuctures have been intensively studied for wide applications. For example, InGaN/GaN quantum wells (QWs) have been used as active materials for light… (more)

Subjects/Keywords: III-Nitrides; Laser Cooling; Nonlinear; Photoluminescence; Raman; Terahertz; Electrical and Computer Engineering; Engineering

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APA (6th Edition):

Sun, G. (2013). Novel Optical Study and Application on III-NItrides. (Doctoral Dissertation). Lehigh University. Retrieved from https://preserve.lehigh.edu/etd/1641

Chicago Manual of Style (16th Edition):

Sun, Guan. “Novel Optical Study and Application on III-NItrides.” 2013. Doctoral Dissertation, Lehigh University. Accessed March 20, 2019. https://preserve.lehigh.edu/etd/1641.

MLA Handbook (7th Edition):

Sun, Guan. “Novel Optical Study and Application on III-NItrides.” 2013. Web. 20 Mar 2019.

Vancouver:

Sun G. Novel Optical Study and Application on III-NItrides. [Internet] [Doctoral dissertation]. Lehigh University; 2013. [cited 2019 Mar 20]. Available from: https://preserve.lehigh.edu/etd/1641.

Council of Science Editors:

Sun G. Novel Optical Study and Application on III-NItrides. [Doctoral Dissertation]. Lehigh University; 2013. Available from: https://preserve.lehigh.edu/etd/1641


Kansas State University

16. Hoffman, Timothy B. Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method.

Degree: PhD, Department of Chemical Engineering, 2016, Kansas State University

 Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and… (more)

Subjects/Keywords: Crystal growth; Group III nitrides; Compound semiconductors; Materials science; Chemical engineering; Solution growth

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APA (6th Edition):

Hoffman, T. B. (2016). Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method. (Doctoral Dissertation). Kansas State University. Retrieved from http://hdl.handle.net/2097/32797

Chicago Manual of Style (16th Edition):

Hoffman, Timothy B. “Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method.” 2016. Doctoral Dissertation, Kansas State University. Accessed March 20, 2019. http://hdl.handle.net/2097/32797.

MLA Handbook (7th Edition):

Hoffman, Timothy B. “Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method.” 2016. Web. 20 Mar 2019.

Vancouver:

Hoffman TB. Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method. [Internet] [Doctoral dissertation]. Kansas State University; 2016. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/2097/32797.

Council of Science Editors:

Hoffman TB. Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method. [Doctoral Dissertation]. Kansas State University; 2016. Available from: http://hdl.handle.net/2097/32797

17. Himwas, Charlermchai. Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette : III-Nitride nanostructures for UV emitters.

Degree: Docteur es, Nanophysique, 2015, Grenoble Alpes

Ce travail porte sur la conception, l’épitaxie, et la caractérisation structural et optique de deux types de nanostructures, à savoir des boîtes quantiques AlGaN/AIN et… (more)

Subjects/Keywords: Nitrures III-V; Boîtes quantiques; Nanofils; Épitaxie par jets moléculaires; Ultraviolet; III-nitrides; Quantum dots; Nanowires; Molecular beam epitaxy; Ultraviolet; 530

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APA (6th Edition):

Himwas, C. (2015). Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette : III-Nitride nanostructures for UV emitters. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAY011

Chicago Manual of Style (16th Edition):

Himwas, Charlermchai. “Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette : III-Nitride nanostructures for UV emitters.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed March 20, 2019. http://www.theses.fr/2015GREAY011.

MLA Handbook (7th Edition):

Himwas, Charlermchai. “Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette : III-Nitride nanostructures for UV emitters.” 2015. Web. 20 Mar 2019.

Vancouver:

Himwas C. Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette : III-Nitride nanostructures for UV emitters. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2015GREAY011.

Council of Science Editors:

Himwas C. Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette : III-Nitride nanostructures for UV emitters. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAY011


EPFL

18. Shahmohammadi, Mehran. Ultrafast spectroscopy of wide bandgap semiconductor nanostructures.

Degree: 2015, EPFL

 Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting… (more)

Subjects/Keywords: III-nitrides; ZnO; external quantum efficiency; excitons; biexcitons; electron-hole plasma; Mott-transition; polariton lasing; exciton binding energy; non-polar QWs

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APA (6th Edition):

Shahmohammadi, M. (2015). Ultrafast spectroscopy of wide bandgap semiconductor nanostructures. (Thesis). EPFL. Retrieved from http://infoscience.epfl.ch/record/210609

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Shahmohammadi, Mehran. “Ultrafast spectroscopy of wide bandgap semiconductor nanostructures.” 2015. Thesis, EPFL. Accessed March 20, 2019. http://infoscience.epfl.ch/record/210609.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Shahmohammadi, Mehran. “Ultrafast spectroscopy of wide bandgap semiconductor nanostructures.” 2015. Web. 20 Mar 2019.

Vancouver:

Shahmohammadi M. Ultrafast spectroscopy of wide bandgap semiconductor nanostructures. [Internet] [Thesis]. EPFL; 2015. [cited 2019 Mar 20]. Available from: http://infoscience.epfl.ch/record/210609.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Shahmohammadi M. Ultrafast spectroscopy of wide bandgap semiconductor nanostructures. [Thesis]. EPFL; 2015. Available from: http://infoscience.epfl.ch/record/210609

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

19. Pal, Joydeep. Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices.

Degree: PhD, 2013, University of Manchester

 Materials have always had a large impact on society over the different ages. Piezoelectric materials are the often ‘invisible’ materials which find widespread use, unknown… (more)

Subjects/Keywords: 537; Piezoelectricity; Piezotronics; III-Nitrides; Semiconductor Devices

…of the Gr-III-Nitrides Quantum Dots", UK Semiconductors 2011, Sheffield, UK.  J… …compared to the unstrained case.24 Group III-Nitrides with wurtzite crystal structure and having… …this effect in the III-V’s, mainly III-Nitrides and II-VI’s can be found later in chapter 3… …69 3.1.1. ZB III-V Semiconductors… …Results on III-Nitride Semiconductors..................................................85 3.2.1… 

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APA (6th Edition):

Pal, J. (2013). Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/exploiting-non-linear-piezoelectricity-in-novel-semiconductor-based-electronic-devices(9e358fe5-637d-4106-834b-3b2ae40a8a7a).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607006

Chicago Manual of Style (16th Edition):

Pal, Joydeep. “Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices.” 2013. Doctoral Dissertation, University of Manchester. Accessed March 20, 2019. https://www.research.manchester.ac.uk/portal/en/theses/exploiting-non-linear-piezoelectricity-in-novel-semiconductor-based-electronic-devices(9e358fe5-637d-4106-834b-3b2ae40a8a7a).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607006.

MLA Handbook (7th Edition):

Pal, Joydeep. “Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices.” 2013. Web. 20 Mar 2019.

Vancouver:

Pal J. Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices. [Internet] [Doctoral dissertation]. University of Manchester; 2013. [cited 2019 Mar 20]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/exploiting-non-linear-piezoelectricity-in-novel-semiconductor-based-electronic-devices(9e358fe5-637d-4106-834b-3b2ae40a8a7a).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607006.

Council of Science Editors:

Pal J. Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices. [Doctoral Dissertation]. University of Manchester; 2013. Available from: https://www.research.manchester.ac.uk/portal/en/theses/exploiting-non-linear-piezoelectricity-in-novel-semiconductor-based-electronic-devices(9e358fe5-637d-4106-834b-3b2ae40a8a7a).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607006

20. Pal, Joydeep. Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices.

Degree: 2013, University of Manchester

 Materials have always had a large impact on society over the different ages. Piezoelectric materials are the often ‘invisible’ materials which find widespread use, unknown… (more)

Subjects/Keywords: Piezoelectricity; Piezotronics; III-Nitrides; Semiconductor Devices

…of the Gr-III-Nitrides Quantum Dots", UK Semiconductors 2011, Sheffield, UK.  J… …compared to the unstrained case.24 Group III-Nitrides with wurtzite crystal structure and having… …this effect in the III-V’s, mainly III-Nitrides and II-VI’s can be found later in chapter 3… …69 3.1.1. ZB III-V Semiconductors… …Results on III-Nitride Semiconductors..................................................85 3.2.1… 

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APA (6th Edition):

Pal, J. (2013). Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:211274

Chicago Manual of Style (16th Edition):

Pal, Joydeep. “Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices.” 2013. Doctoral Dissertation, University of Manchester. Accessed March 20, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:211274.

MLA Handbook (7th Edition):

Pal, Joydeep. “Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices.” 2013. Web. 20 Mar 2019.

Vancouver:

Pal J. Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices. [Internet] [Doctoral dissertation]. University of Manchester; 2013. [cited 2019 Mar 20]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:211274.

Council of Science Editors:

Pal J. Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices. [Doctoral Dissertation]. University of Manchester; 2013. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:211274


University of North Texas

21. Butler, Sween J. Nonlinear Light Generation from Optical Cavities and Antennae.

Degree: 2017, University of North Texas

 Semiconductor based micro- and nano-structures grown in a systematic and controlled way using selective area growth are emerging as a promising route toward devices for… (more)

Subjects/Keywords: Nonlinear optics; Frequency conversion; Second harmonic generation; Multi-photon luminescence; Semiconductors; Quantum wells; Group III nitrides

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APA (6th Edition):

Butler, S. J. (2017). Nonlinear Light Generation from Optical Cavities and Antennae. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc984232/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Butler, Sween J. “Nonlinear Light Generation from Optical Cavities and Antennae.” 2017. Thesis, University of North Texas. Accessed March 20, 2019. https://digital.library.unt.edu/ark:/67531/metadc984232/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Butler, Sween J. “Nonlinear Light Generation from Optical Cavities and Antennae.” 2017. Web. 20 Mar 2019.

Vancouver:

Butler SJ. Nonlinear Light Generation from Optical Cavities and Antennae. [Internet] [Thesis]. University of North Texas; 2017. [cited 2019 Mar 20]. Available from: https://digital.library.unt.edu/ark:/67531/metadc984232/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Butler SJ. Nonlinear Light Generation from Optical Cavities and Antennae. [Thesis]. University of North Texas; 2017. Available from: https://digital.library.unt.edu/ark:/67531/metadc984232/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Linköping University

22. Andersson, Joakim. Band Structure Modelling of Strained Bulk and Quantum Dot III-Nitrides to Determine the Linear Polarization for Interband Recombinations.

Degree: Chemistry and Biology, 2018, Linköping University

  8-band k.p theory was applied to bulk GaN and InN. The optical transitionintensity was computed and results show > 80-90% degree of polarization inthe… (more)

Subjects/Keywords: k.p theory; strain; III-nitrides; GaN; InN; bulk; quantum dot; nanostructures; linear polarization; Condensed Matter Physics; Den kondenserade materiens fysik

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APA (6th Edition):

Andersson, J. (2018). Band Structure Modelling of Strained Bulk and Quantum Dot III-Nitrides to Determine the Linear Polarization for Interband Recombinations. (Thesis). Linköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-150835

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Andersson, Joakim. “Band Structure Modelling of Strained Bulk and Quantum Dot III-Nitrides to Determine the Linear Polarization for Interband Recombinations.” 2018. Thesis, Linköping University. Accessed March 20, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-150835.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Andersson, Joakim. “Band Structure Modelling of Strained Bulk and Quantum Dot III-Nitrides to Determine the Linear Polarization for Interband Recombinations.” 2018. Web. 20 Mar 2019.

Vancouver:

Andersson J. Band Structure Modelling of Strained Bulk and Quantum Dot III-Nitrides to Determine the Linear Polarization for Interband Recombinations. [Internet] [Thesis]. Linköping University; 2018. [cited 2019 Mar 20]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-150835.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Andersson J. Band Structure Modelling of Strained Bulk and Quantum Dot III-Nitrides to Determine the Linear Polarization for Interband Recombinations. [Thesis]. Linköping University; 2018. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-150835

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Michigan

23. Hazari, Arnab. III-Nitride Nanowire Based Near-Infrared Optoelectronic Devices on (001) Silicon.

Degree: PhD, Electrical Engineering, 2017, University of Michigan

III-nitride-based optoelectronics research has seen rapid progress since the demonstration of the first blue-emitting diode laser by Nakamura et. al. The research has so far… (more)

Subjects/Keywords: III-Nitrides; Nanowires; Silicon Photonics; Molecular Beam Epitaxy; Monolithic Optoelectronic Devices (Laser, Detector, Photonic Circuit); Infrared Detection; Electrical Engineering; Engineering

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APA (6th Edition):

Hazari, A. (2017). III-Nitride Nanowire Based Near-Infrared Optoelectronic Devices on (001) Silicon. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/140959

Chicago Manual of Style (16th Edition):

Hazari, Arnab. “III-Nitride Nanowire Based Near-Infrared Optoelectronic Devices on (001) Silicon.” 2017. Doctoral Dissertation, University of Michigan. Accessed March 20, 2019. http://hdl.handle.net/2027.42/140959.

MLA Handbook (7th Edition):

Hazari, Arnab. “III-Nitride Nanowire Based Near-Infrared Optoelectronic Devices on (001) Silicon.” 2017. Web. 20 Mar 2019.

Vancouver:

Hazari A. III-Nitride Nanowire Based Near-Infrared Optoelectronic Devices on (001) Silicon. [Internet] [Doctoral dissertation]. University of Michigan; 2017. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/2027.42/140959.

Council of Science Editors:

Hazari A. III-Nitride Nanowire Based Near-Infrared Optoelectronic Devices on (001) Silicon. [Doctoral Dissertation]. University of Michigan; 2017. Available from: http://hdl.handle.net/2027.42/140959

24. Dagher, Roy. Croissance directe de graphène par dépôt chimique en phase vapeur sur carbure de silicium et nitrures d'éléments III : Direct growth of graphene by chemical vapor deposition on silicon carbide and III-nitrides.

Degree: Docteur es, Physique, 2017, Côte d'Azur

 Le graphène est un matériau bidimensionnel appartenant à la famille des allotropes du carbone. Il consiste en une couche atomique restant stable grâce à des… (more)

Subjects/Keywords: Graphène; Carbure de silicium; Dépôt chimique en phase vapeur; Croissance directe; Hydrogène; Nitrures d’éléments III; Nitrure d’aluminium; Graphene; Silicon carbide; Chemical vapor deposition; Direct growth; Hydrogen; III-nitrides; Aluminum nitride

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APA (6th Edition):

Dagher, R. (2017). Croissance directe de graphène par dépôt chimique en phase vapeur sur carbure de silicium et nitrures d'éléments III : Direct growth of graphene by chemical vapor deposition on silicon carbide and III-nitrides. (Doctoral Dissertation). Côte d'Azur. Retrieved from http://www.theses.fr/2017AZUR4068

Chicago Manual of Style (16th Edition):

Dagher, Roy. “Croissance directe de graphène par dépôt chimique en phase vapeur sur carbure de silicium et nitrures d'éléments III : Direct growth of graphene by chemical vapor deposition on silicon carbide and III-nitrides.” 2017. Doctoral Dissertation, Côte d'Azur. Accessed March 20, 2019. http://www.theses.fr/2017AZUR4068.

MLA Handbook (7th Edition):

Dagher, Roy. “Croissance directe de graphène par dépôt chimique en phase vapeur sur carbure de silicium et nitrures d'éléments III : Direct growth of graphene by chemical vapor deposition on silicon carbide and III-nitrides.” 2017. Web. 20 Mar 2019.

Vancouver:

Dagher R. Croissance directe de graphène par dépôt chimique en phase vapeur sur carbure de silicium et nitrures d'éléments III : Direct growth of graphene by chemical vapor deposition on silicon carbide and III-nitrides. [Internet] [Doctoral dissertation]. Côte d'Azur; 2017. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2017AZUR4068.

Council of Science Editors:

Dagher R. Croissance directe de graphène par dépôt chimique en phase vapeur sur carbure de silicium et nitrures d'éléments III : Direct growth of graphene by chemical vapor deposition on silicon carbide and III-nitrides. [Doctoral Dissertation]. Côte d'Azur; 2017. Available from: http://www.theses.fr/2017AZUR4068


Université Paris-Sud – Paris XI

25. Luna bugallo, Andrès de. Fabrication and characterization of nanodevices based on III-V nanowires : Fabrication et caracterisation de nanodispositifs à base de nanofils de semiconducteurs III-V.

Degree: Docteur es, Physique, 2012, Université Paris-Sud – Paris XI

Les nanofils semiconducteurs sont des nano-objets dont la longueur peut aller jusqu'à quelques microns et dont la section peut être inférieure à la dizaine de… (more)

Subjects/Keywords: Nanofils; Nitrures III-V; Photodétecteurs; Hétérostructures; Disques quantiques; Photoluminescence; Cathodoluminescence; Electroluminescence LEDs; Nanowires; III-V Nitrides; Photodetectors; Heterostructures; Quantum discs; Photoluminescence; Cathodoluminescence; Electroluminescence LEDs

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APA (6th Edition):

Luna bugallo, A. d. (2012). Fabrication and characterization of nanodevices based on III-V nanowires : Fabrication et caracterisation de nanodispositifs à base de nanofils de semiconducteurs III-V. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2012PA112117

Chicago Manual of Style (16th Edition):

Luna bugallo, Andrès de. “Fabrication and characterization of nanodevices based on III-V nanowires : Fabrication et caracterisation de nanodispositifs à base de nanofils de semiconducteurs III-V.” 2012. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed March 20, 2019. http://www.theses.fr/2012PA112117.

MLA Handbook (7th Edition):

Luna bugallo, Andrès de. “Fabrication and characterization of nanodevices based on III-V nanowires : Fabrication et caracterisation de nanodispositifs à base de nanofils de semiconducteurs III-V.” 2012. Web. 20 Mar 2019.

Vancouver:

Luna bugallo Ad. Fabrication and characterization of nanodevices based on III-V nanowires : Fabrication et caracterisation de nanodispositifs à base de nanofils de semiconducteurs III-V. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2012. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2012PA112117.

Council of Science Editors:

Luna bugallo Ad. Fabrication and characterization of nanodevices based on III-V nanowires : Fabrication et caracterisation de nanodispositifs à base de nanofils de semiconducteurs III-V. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2012. Available from: http://www.theses.fr/2012PA112117


EPFL

26. Corfdir, Pierre Michel. Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures.

Degree: 2011, EPFL

 For more than fifteen years, III-nitrides have become the materials of choice for the realization of optoelectronics devices operating in the visible-UV spectral range. Yet,… (more)

Subjects/Keywords: gallium nitride; III-nitrides; excitons; quantum well; nanostructures; photoluminescence; cathodoluminescence; defects; nitrure de gallium; nitrures d'éléments III; excitons; puits quantique; nanostructures; photoluminescence; cathodoluminescence; défauts

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Corfdir, P. M. (2011). Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures. (Thesis). EPFL. Retrieved from http://infoscience.epfl.ch/record/166116

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Corfdir, Pierre Michel. “Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures.” 2011. Thesis, EPFL. Accessed March 20, 2019. http://infoscience.epfl.ch/record/166116.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Corfdir, Pierre Michel. “Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures.” 2011. Web. 20 Mar 2019.

Vancouver:

Corfdir PM. Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures. [Internet] [Thesis]. EPFL; 2011. [cited 2019 Mar 20]. Available from: http://infoscience.epfl.ch/record/166116.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Corfdir PM. Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures. [Thesis]. EPFL; 2011. Available from: http://infoscience.epfl.ch/record/166116

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia State University

27. Alevli, Mustafa. Growth and Characterization of Indium Nitride Layers Grown by High-Pressure Chemical Vapor Deposition.

Degree: PhD, Physics and Astronomy, 2008, Georgia State University

  In this research the growth of InN epilayers by high-pressure chemical vapor deposition (HPCVD) and structural, optical properties of HPCVD grown InN layers has… (more)

Subjects/Keywords: Indium Nitride; In-rich group III Nitrides; III-V semiconductors; High-Pressure; Chemical Vapor Deposition; V/III molar ratio

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Alevli, M. (2008). Growth and Characterization of Indium Nitride Layers Grown by High-Pressure Chemical Vapor Deposition. (Doctoral Dissertation). Georgia State University. Retrieved from https://scholarworks.gsu.edu/phy_astr_diss/24

Chicago Manual of Style (16th Edition):

Alevli, Mustafa. “Growth and Characterization of Indium Nitride Layers Grown by High-Pressure Chemical Vapor Deposition.” 2008. Doctoral Dissertation, Georgia State University. Accessed March 20, 2019. https://scholarworks.gsu.edu/phy_astr_diss/24.

MLA Handbook (7th Edition):

Alevli, Mustafa. “Growth and Characterization of Indium Nitride Layers Grown by High-Pressure Chemical Vapor Deposition.” 2008. Web. 20 Mar 2019.

Vancouver:

Alevli M. Growth and Characterization of Indium Nitride Layers Grown by High-Pressure Chemical Vapor Deposition. [Internet] [Doctoral dissertation]. Georgia State University; 2008. [cited 2019 Mar 20]. Available from: https://scholarworks.gsu.edu/phy_astr_diss/24.

Council of Science Editors:

Alevli M. Growth and Characterization of Indium Nitride Layers Grown by High-Pressure Chemical Vapor Deposition. [Doctoral Dissertation]. Georgia State University; 2008. Available from: https://scholarworks.gsu.edu/phy_astr_diss/24


Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

28. Bazioti, Calliope. Διεπιφάνειες, ατέλειες και πεδία παραμόρφωσης σε κραματικές και στρωματικές ετεροδομές-νανοδομές σύνθετων ημιαγωγών.

Degree: 2017, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

The present PhD thesis comprises the study of the structural properties of (0001) InGaN epitaxial layers with high indium contents. Such III-nitride compound semiconductor alloys… (more)

Subjects/Keywords: Ηλεκτρονική μικροσκοπία διέλευσης; Ημιαγωγοί ΙΙΙ-νιτρίδια, Gan, InN; Δισδιάστατοι ημιαγωγοί; Δομικές ιδιότητες στερεών; Transmission electron microscopy; III-V nitrides; 2-dimensional semiconductors; Structural properties of solids

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APA (6th Edition):

Bazioti, C. (2017). Διεπιφάνειες, ατέλειες και πεδία παραμόρφωσης σε κραματικές και στρωματικές ετεροδομές-νανοδομές σύνθετων ημιαγωγών. (Thesis). Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Retrieved from http://hdl.handle.net/10442/hedi/40021

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bazioti, Calliope. “Διεπιφάνειες, ατέλειες και πεδία παραμόρφωσης σε κραματικές και στρωματικές ετεροδομές-νανοδομές σύνθετων ημιαγωγών.” 2017. Thesis, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Accessed March 20, 2019. http://hdl.handle.net/10442/hedi/40021.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bazioti, Calliope. “Διεπιφάνειες, ατέλειες και πεδία παραμόρφωσης σε κραματικές και στρωματικές ετεροδομές-νανοδομές σύνθετων ημιαγωγών.” 2017. Web. 20 Mar 2019.

Vancouver:

Bazioti C. Διεπιφάνειες, ατέλειες και πεδία παραμόρφωσης σε κραματικές και στρωματικές ετεροδομές-νανοδομές σύνθετων ημιαγωγών. [Internet] [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/10442/hedi/40021.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bazioti C. Διεπιφάνειες, ατέλειες και πεδία παραμόρφωσης σε κραματικές και στρωματικές ετεροδομές-νανοδομές σύνθετων ημιαγωγών. [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. Available from: http://hdl.handle.net/10442/hedi/40021

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


EPFL

29. Malinverni, Marco. Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions.

Degree: 2015, EPFL

 Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully… (more)

Subjects/Keywords: ammonia-MBE; gallium nitride; aluminium gallium nitride; III-nitrides; p-type doping; laser diodes; dopant compensation; hydrogen passivation; tunnel junctions; current spreading

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Malinverni, M. (2015). Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions. (Thesis). EPFL. Retrieved from http://infoscience.epfl.ch/record/213234

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Malinverni, Marco. “Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions.” 2015. Thesis, EPFL. Accessed March 20, 2019. http://infoscience.epfl.ch/record/213234.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Malinverni, Marco. “Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions.” 2015. Web. 20 Mar 2019.

Vancouver:

Malinverni M. Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions. [Internet] [Thesis]. EPFL; 2015. [cited 2019 Mar 20]. Available from: http://infoscience.epfl.ch/record/213234.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Malinverni M. Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions. [Thesis]. EPFL; 2015. Available from: http://infoscience.epfl.ch/record/213234

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

30. Acord, Jeremy Daniel. IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE.

Degree: PhD, Materials Science and Engineering, 2007, Penn State University

 Al(x)Ga(1-x)N is a wide band gap compound semiconductor material with the desirable properties of high chemical and thermal stability, as well as a direct band… (more)

Subjects/Keywords: METAL ORGANIC CHEMICAL VAPOR DEPOSITION; III-V NITRIDES; STRESS MEASUREMENT; EPITAXY

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Acord, J. D. (2007). IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/7830

Chicago Manual of Style (16th Edition):

Acord, Jeremy Daniel. “IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE.” 2007. Doctoral Dissertation, Penn State University. Accessed March 20, 2019. https://etda.libraries.psu.edu/catalog/7830.

MLA Handbook (7th Edition):

Acord, Jeremy Daniel. “IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE.” 2007. Web. 20 Mar 2019.

Vancouver:

Acord JD. IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE. [Internet] [Doctoral dissertation]. Penn State University; 2007. [cited 2019 Mar 20]. Available from: https://etda.libraries.psu.edu/catalog/7830.

Council of Science Editors:

Acord JD. IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE. [Doctoral Dissertation]. Penn State University; 2007. Available from: https://etda.libraries.psu.edu/catalog/7830

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