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You searched for subject:(III nitrides). Showing records 1 – 30 of 61 total matches.

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University of Notre Dame

1. Satyaki Ganguly. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.

Degree: PhD, Electrical Engineering, 2014, University of Notre Dame

  Owing to the large band gap (EgGaN=3.4eV) and high electron saturation velocity, GaN based high electron mobility transistors (HEMTs) are attractive for high voltage… (more)

Subjects/Keywords: III-Nitrides; MBE

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APA (6th Edition):

Ganguly, S. (2014). High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/0c483j34v8f

Chicago Manual of Style (16th Edition):

Ganguly, Satyaki. “High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.” 2014. Doctoral Dissertation, University of Notre Dame. Accessed May 22, 2019. https://curate.nd.edu/show/0c483j34v8f.

MLA Handbook (7th Edition):

Ganguly, Satyaki. “High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>.” 2014. Web. 22 May 2019.

Vancouver:

Ganguly S. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2014. [cited 2019 May 22]. Available from: https://curate.nd.edu/show/0c483j34v8f.

Council of Science Editors:

Ganguly S. High Performance III-Nitride Heterostructure Devices Exploiting Polarization, Isotope Physics and Integrating with Silicon</h1>. [Doctoral Dissertation]. University of Notre Dame; 2014. Available from: https://curate.nd.edu/show/0c483j34v8f


Arizona State University

2. Hill, Arlinda. Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors.

Degree: PhD, Physics, 2011, Arizona State University

III-nitride alloys are wide band gap semiconductors with a broad range of applications in optoelectronic devices such as light emitting diodes and laser diodes. Indium… (more)

Subjects/Keywords: Physics; Materials Science; III nitrides; Semiconductors; thermodynamics

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APA (6th Edition):

Hill, A. (2011). Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/9035

Chicago Manual of Style (16th Edition):

Hill, Arlinda. “Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors.” 2011. Doctoral Dissertation, Arizona State University. Accessed May 22, 2019. http://repository.asu.edu/items/9035.

MLA Handbook (7th Edition):

Hill, Arlinda. “Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors.” 2011. Web. 22 May 2019.

Vancouver:

Hill A. Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors. [Internet] [Doctoral dissertation]. Arizona State University; 2011. [cited 2019 May 22]. Available from: http://repository.asu.edu/items/9035.

Council of Science Editors:

Hill A. Growth, Characterization, and Thermodynamics of III-Nitride Semiconductors. [Doctoral Dissertation]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/9035

3. Kaun, Stephen William. Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy.

Degree: 2014, University of California – eScholarship, University of California

 GaN-based high-electron-mobility transistors (HEMTs) will play an important role in the next generation of high-frequency amplifiers and power-switching devices. Since parasitic conduction (leakage) through the… (more)

Subjects/Keywords: Materials Science; Epitaxy; III-nitrides; Transistors

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APA (6th Edition):

Kaun, S. W. (2014). Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/618910sq

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kaun, Stephen William. “Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy.” 2014. Thesis, University of California – eScholarship, University of California. Accessed May 22, 2019. http://www.escholarship.org/uc/item/618910sq.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kaun, Stephen William. “Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy.” 2014. Web. 22 May 2019.

Vancouver:

Kaun SW. Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy. [Internet] [Thesis]. University of California – eScholarship, University of California; 2014. [cited 2019 May 22]. Available from: http://www.escholarship.org/uc/item/618910sq.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kaun SW. Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy. [Thesis]. University of California – eScholarship, University of California; 2014. Available from: http://www.escholarship.org/uc/item/618910sq

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

4. Soumelidou, Maria-Marianna. Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας.

Degree: 2017, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

The aim of the present thesis was the study of the electronic, structural and elastic properties of III-nitrides and their alloys using both experimental techniques… (more)

Subjects/Keywords: Νιτρίδια III-V; Ατομιστική προσομοίωση; III-Nitrides; Atomistic simulations

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APA (6th Edition):

Soumelidou, M. (2017). Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας. (Thesis). Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Retrieved from http://hdl.handle.net/10442/hedi/42069

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Soumelidou, Maria-Marianna. “Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας.” 2017. Thesis, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Accessed May 22, 2019. http://hdl.handle.net/10442/hedi/42069.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Soumelidou, Maria-Marianna. “Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας.” 2017. Web. 22 May 2019.

Vancouver:

Soumelidou M. Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας. [Internet] [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. [cited 2019 May 22]. Available from: http://hdl.handle.net/10442/hedi/42069.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Soumelidou M. Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας. [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. Available from: http://hdl.handle.net/10442/hedi/42069

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

5. Su, Guan-Lin. Modeling of devices for gallium-nitride-based integrated photonics.

Degree: PhD, Electrical & Computer Engr, 2016, University of Illinois – Urbana-Champaign

 Credited as "the most important semiconductor since silicon (Si)," gallium nitride (GaN) has received a tremendous amount of attention during the past two decades due… (more)

Subjects/Keywords: III-Nitrides (III-Ns); Self-assembled quantum dots (SAQDs); Integrated photonics

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APA (6th Edition):

Su, G. (2016). Modeling of devices for gallium-nitride-based integrated photonics. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/92916

Chicago Manual of Style (16th Edition):

Su, Guan-Lin. “Modeling of devices for gallium-nitride-based integrated photonics.” 2016. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed May 22, 2019. http://hdl.handle.net/2142/92916.

MLA Handbook (7th Edition):

Su, Guan-Lin. “Modeling of devices for gallium-nitride-based integrated photonics.” 2016. Web. 22 May 2019.

Vancouver:

Su G. Modeling of devices for gallium-nitride-based integrated photonics. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2016. [cited 2019 May 22]. Available from: http://hdl.handle.net/2142/92916.

Council of Science Editors:

Su G. Modeling of devices for gallium-nitride-based integrated photonics. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/92916


Université Paris-Sud – Paris XI

6. Sakr, Salam. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz.

Degree: Docteur es, Physique, 2012, Université Paris-Sud – Paris XI

Les dispositifs intersousbandes à base de nitrures d’éléments III ont des propriétés très intéressantes pour l’optoélectronique et la photonique dans l’infrarouge. Les hétérostructures formées par… (more)

Subjects/Keywords: Nitrures d’éléments III; Intersousbandes; Infrarouge; III-nitrides; Intersubband; Infrared

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APA (6th Edition):

Sakr, S. (2012). Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2012PA112207

Chicago Manual of Style (16th Edition):

Sakr, Salam. “Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz.” 2012. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed May 22, 2019. http://www.theses.fr/2012PA112207.

MLA Handbook (7th Edition):

Sakr, Salam. “Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz.” 2012. Web. 22 May 2019.

Vancouver:

Sakr S. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2012. [cited 2019 May 22]. Available from: http://www.theses.fr/2012PA112207.

Council of Science Editors:

Sakr S. Dispositifs intersousbandes à base de nitrures d’éléments III du proche infrarouge au THz : Intersubband devices based on III-nitrides from near infrared to THz. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2012. Available from: http://www.theses.fr/2012PA112207


Université de Lorraine

7. Li, Xin. Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.

Degree: Docteur es, Physique, 2015, Université de Lorraine

Le contexte de cette thèse se situe dans les nombreuses applications de sources UV tels que la stérilisation et la purification. Comparés aux sources conventionnelles,… (more)

Subjects/Keywords: VCSEL; DBR; DUV; MOVPE; III-Nitrures; VCSEL; DBR; DUV; MOVPE; III nitrides; 537.622; 621.36

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APA (6th Edition):

Li, X. (2015). Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. (Doctoral Dissertation). Université de Lorraine. Retrieved from http://www.theses.fr/2015LORR0243

Chicago Manual of Style (16th Edition):

Li, Xin. “Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2015. Doctoral Dissertation, Université de Lorraine. Accessed May 22, 2019. http://www.theses.fr/2015LORR0243.

MLA Handbook (7th Edition):

Li, Xin. “Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2015. Web. 22 May 2019.

Vancouver:

Li X. Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Internet] [Doctoral dissertation]. Université de Lorraine; 2015. [cited 2019 May 22]. Available from: http://www.theses.fr/2015LORR0243.

Council of Science Editors:

Li X. Lasers à cavité vertical émettant par la surface dans l’ultraviolet profond à base des matériaux BAlGaN : BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Doctoral Dissertation]. Université de Lorraine; 2015. Available from: http://www.theses.fr/2015LORR0243

8. VANDEMAELE, MICHIEL. Numerical simulation of InN based HEMTs.

Degree: 2015, Chalmers University of Technology

 Invented in 1980, High Electron Mobility Transistors(HEMTs) are now widely used in high-frequency electronics. They are fabricated in different material systems and a possible new… (more)

Subjects/Keywords: indium nitride (InN); III-nitrides; HEMT; numerical simulations; TCAD

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APA (6th Edition):

VANDEMAELE, M. (2015). Numerical simulation of InN based HEMTs. (Thesis). Chalmers University of Technology. Retrieved from http://studentarbeten.chalmers.se/publication/218658-numerical-simulation-of-inn-based-hemts

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

VANDEMAELE, MICHIEL. “Numerical simulation of InN based HEMTs.” 2015. Thesis, Chalmers University of Technology. Accessed May 22, 2019. http://studentarbeten.chalmers.se/publication/218658-numerical-simulation-of-inn-based-hemts.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

VANDEMAELE, MICHIEL. “Numerical simulation of InN based HEMTs.” 2015. Web. 22 May 2019.

Vancouver:

VANDEMAELE M. Numerical simulation of InN based HEMTs. [Internet] [Thesis]. Chalmers University of Technology; 2015. [cited 2019 May 22]. Available from: http://studentarbeten.chalmers.se/publication/218658-numerical-simulation-of-inn-based-hemts.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

VANDEMAELE M. Numerical simulation of InN based HEMTs. [Thesis]. Chalmers University of Technology; 2015. Available from: http://studentarbeten.chalmers.se/publication/218658-numerical-simulation-of-inn-based-hemts

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

9. Koukoula, Triantafyllia. Structural properties and phenomena in low-dimensional III-N compound semiconductors.

Degree: 2015, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

This thesis concerns the study of the structural properties and phenomena in low-dimensional III-Nitride compound semiconductors by means of Transmission electron microscopy (TEM). TEM techniques… (more)

Subjects/Keywords: Νιτρίδια; Ηλεκτρονική μικροσκοπία διέλευσης; Νανοδομές; III-Nitrides; Transmision electron microscopy; Nanostructures

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APA (6th Edition):

Koukoula, T. (2015). Structural properties and phenomena in low-dimensional III-N compound semiconductors. (Thesis). Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Retrieved from http://hdl.handle.net/10442/hedi/35396

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Koukoula, Triantafyllia. “Structural properties and phenomena in low-dimensional III-N compound semiconductors.” 2015. Thesis, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Accessed May 22, 2019. http://hdl.handle.net/10442/hedi/35396.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Koukoula, Triantafyllia. “Structural properties and phenomena in low-dimensional III-N compound semiconductors.” 2015. Web. 22 May 2019.

Vancouver:

Koukoula T. Structural properties and phenomena in low-dimensional III-N compound semiconductors. [Internet] [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2015. [cited 2019 May 22]. Available from: http://hdl.handle.net/10442/hedi/35396.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Koukoula T. Structural properties and phenomena in low-dimensional III-N compound semiconductors. [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2015. Available from: http://hdl.handle.net/10442/hedi/35396

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. CHENG, YU-JUNG. Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations.

Degree: Master, Physics, 2016, NSYSU

 In this research, we grow m-plane gallium nitride on sapphire substrate using molecular beam epitaxy system, then using metal-organic chemical vapor deposition (MOCVD) to grow… (more)

Subjects/Keywords: III-V Nitrides; Molecular Beam Epitaxy (MBE); Nonpolar; Manganese; Raman spectroscopy

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APA (6th Edition):

CHENG, Y. (2016). Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

CHENG, YU-JUNG. “Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations.” 2016. Thesis, NSYSU. Accessed May 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

CHENG, YU-JUNG. “Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations.” 2016. Web. 22 May 2019.

Vancouver:

CHENG Y. Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 May 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

CHENG Y. Growth of m-plane GaN:Mn by plasma-assisted molecular beam epitaxy and characterizations. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0223116-144516

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Lehigh University

11. Zeng, Guosong. Investigation of Wear Mechanism of Gallium Nitride.

Degree: PhD, Mechanical Engineering, 2018, Lehigh University

 The optoelectronic properties of gallium nitride (GaN) has been extensively studied for decades, which has facilitated its application in many different areas, cementing it as… (more)

Subjects/Keywords: Band Bending; III-Nitrides; Materials Tribology; Surface Chemistry; Mechanical Engineering

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APA (6th Edition):

Zeng, G. (2018). Investigation of Wear Mechanism of Gallium Nitride. (Doctoral Dissertation). Lehigh University. Retrieved from https://preserve.lehigh.edu/etd/2995

Chicago Manual of Style (16th Edition):

Zeng, Guosong. “Investigation of Wear Mechanism of Gallium Nitride.” 2018. Doctoral Dissertation, Lehigh University. Accessed May 22, 2019. https://preserve.lehigh.edu/etd/2995.

MLA Handbook (7th Edition):

Zeng, Guosong. “Investigation of Wear Mechanism of Gallium Nitride.” 2018. Web. 22 May 2019.

Vancouver:

Zeng G. Investigation of Wear Mechanism of Gallium Nitride. [Internet] [Doctoral dissertation]. Lehigh University; 2018. [cited 2019 May 22]. Available from: https://preserve.lehigh.edu/etd/2995.

Council of Science Editors:

Zeng G. Investigation of Wear Mechanism of Gallium Nitride. [Doctoral Dissertation]. Lehigh University; 2018. Available from: https://preserve.lehigh.edu/etd/2995


Kansas State University

12. Pantha, Bed Nidhi. Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation.

Degree: PhD, Department of Physics, 2009, Kansas State University

III-nitride nanostructures and devices were synthesized by metal organic chemical vapor deposition (MOCVD) for their applications in various photonic, optoelectronic, and energy devices such as… (more)

Subjects/Keywords: III-nitrides; MOCVD; Thermoelectric; InGaN; Dislocation; XRD; Physics, Condensed Matter (0611)

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APA (6th Edition):

Pantha, B. N. (2009). Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation. (Doctoral Dissertation). Kansas State University. Retrieved from http://hdl.handle.net/2097/2199

Chicago Manual of Style (16th Edition):

Pantha, Bed Nidhi. “Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation.” 2009. Doctoral Dissertation, Kansas State University. Accessed May 22, 2019. http://hdl.handle.net/2097/2199.

MLA Handbook (7th Edition):

Pantha, Bed Nidhi. “Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation.” 2009. Web. 22 May 2019.

Vancouver:

Pantha BN. Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation. [Internet] [Doctoral dissertation]. Kansas State University; 2009. [cited 2019 May 22]. Available from: http://hdl.handle.net/2097/2199.

Council of Science Editors:

Pantha BN. Epitaxial growth of III-nitride nanostructures and applications for visible emitters and energy generation. [Doctoral Dissertation]. Kansas State University; 2009. Available from: http://hdl.handle.net/2097/2199


Georgia Tech

13. Li, Xin. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 The context of this thesis falls in the wide applications of UV light sources such as sterilization and purification. On the material aspect, III-nitrides (BAlGaInN)… (more)

Subjects/Keywords: VCSEL; Distributed Bragg reflector; Deep UV; MOVPE; III nitrides

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APA (6th Edition):

Li, X. (2016). BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55561

Chicago Manual of Style (16th Edition):

Li, Xin. “BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2016. Doctoral Dissertation, Georgia Tech. Accessed May 22, 2019. http://hdl.handle.net/1853/55561.

MLA Handbook (7th Edition):

Li, Xin. “BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region.” 2016. Web. 22 May 2019.

Vancouver:

Li X. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 May 22]. Available from: http://hdl.handle.net/1853/55561.

Council of Science Editors:

Li X. BAlGaN-based vertical cavity surface-emitting lasers operating in deep UV region. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55561


Penn State University

14. Al Balushi, Zakaria. MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers.

Degree: 2017, Penn State University

 Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This… (more)

Subjects/Keywords: Group-III Nitrides; MOCVD; Thin Films; Graphene; 2D Materials

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APA (6th Edition):

Al Balushi, Z. (2017). MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers. (Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/14457zya5004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Al Balushi, Zakaria. “MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers.” 2017. Thesis, Penn State University. Accessed May 22, 2019. https://etda.libraries.psu.edu/catalog/14457zya5004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Al Balushi, Zakaria. “MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers.” 2017. Web. 22 May 2019.

Vancouver:

Al Balushi Z. MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers. [Internet] [Thesis]. Penn State University; 2017. [cited 2019 May 22]. Available from: https://etda.libraries.psu.edu/catalog/14457zya5004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Al Balushi Z. MOCVD Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers. [Thesis]. Penn State University; 2017. Available from: https://etda.libraries.psu.edu/catalog/14457zya5004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

15. Jai Kishan Verma. Polarization and Band Gap Engineered III-Nitride Optoelectronic Device Structures</h1>.

Degree: PhD, Electrical Engineering, 2013, University of Notre Dame

  Immense progress has been made in III-Nitride optical devices since the demonstration of blue lasers in mid 90’s. The attention of the solid state… (more)

Subjects/Keywords: Quantum Dots; III-nitrides; UV LEDs; Tunnel Injection; Polarization

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APA (6th Edition):

Verma, J. K. (2013). Polarization and Band Gap Engineered III-Nitride Optoelectronic Device Structures</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/bn999595x4q

Chicago Manual of Style (16th Edition):

Verma, Jai Kishan. “Polarization and Band Gap Engineered III-Nitride Optoelectronic Device Structures</h1>.” 2013. Doctoral Dissertation, University of Notre Dame. Accessed May 22, 2019. https://curate.nd.edu/show/bn999595x4q.

MLA Handbook (7th Edition):

Verma, Jai Kishan. “Polarization and Band Gap Engineered III-Nitride Optoelectronic Device Structures</h1>.” 2013. Web. 22 May 2019.

Vancouver:

Verma JK. Polarization and Band Gap Engineered III-Nitride Optoelectronic Device Structures</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2013. [cited 2019 May 22]. Available from: https://curate.nd.edu/show/bn999595x4q.

Council of Science Editors:

Verma JK. Polarization and Band Gap Engineered III-Nitride Optoelectronic Device Structures</h1>. [Doctoral Dissertation]. University of Notre Dame; 2013. Available from: https://curate.nd.edu/show/bn999595x4q

16. Hwang, David. Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays.

Degree: 2018, University of California – eScholarship, University of California

 High efficiency III-nitride light-emitting diodes (LEDs) have drastically improved solid-state lighting. They are sold in stores and are gradually replacing compact fluorescent lightbulbs because they… (more)

Subjects/Keywords: Materials Science; display; iii-nitrides; mass transfer; micro-LED

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APA (6th Edition):

Hwang, D. (2018). Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/2b28z31w

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hwang, David. “Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays.” 2018. Thesis, University of California – eScholarship, University of California. Accessed May 22, 2019. http://www.escholarship.org/uc/item/2b28z31w.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hwang, David. “Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays.” 2018. Web. 22 May 2019.

Vancouver:

Hwang D. Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays. [Internet] [Thesis]. University of California – eScholarship, University of California; 2018. [cited 2019 May 22]. Available from: http://www.escholarship.org/uc/item/2b28z31w.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hwang D. Epitaxial Growth, Nanofabrication, and Mass Transfer of InGaN Micro-LEDs for Displays. [Thesis]. University of California – eScholarship, University of California; 2018. Available from: http://www.escholarship.org/uc/item/2b28z31w

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Lehigh University

17. Sun, Guan. Novel Optical Study and Application on III-NItrides.

Degree: PhD, Electrical Engineering, 2013, Lehigh University

 GaN and its heterostuctures have been intensively studied for wide applications. For example, InGaN/GaN quantum wells (QWs) have been used as active materials for light… (more)

Subjects/Keywords: III-Nitrides; Laser Cooling; Nonlinear; Photoluminescence; Raman; Terahertz; Electrical and Computer Engineering; Engineering

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APA (6th Edition):

Sun, G. (2013). Novel Optical Study and Application on III-NItrides. (Doctoral Dissertation). Lehigh University. Retrieved from https://preserve.lehigh.edu/etd/1641

Chicago Manual of Style (16th Edition):

Sun, Guan. “Novel Optical Study and Application on III-NItrides.” 2013. Doctoral Dissertation, Lehigh University. Accessed May 22, 2019. https://preserve.lehigh.edu/etd/1641.

MLA Handbook (7th Edition):

Sun, Guan. “Novel Optical Study and Application on III-NItrides.” 2013. Web. 22 May 2019.

Vancouver:

Sun G. Novel Optical Study and Application on III-NItrides. [Internet] [Doctoral dissertation]. Lehigh University; 2013. [cited 2019 May 22]. Available from: https://preserve.lehigh.edu/etd/1641.

Council of Science Editors:

Sun G. Novel Optical Study and Application on III-NItrides. [Doctoral Dissertation]. Lehigh University; 2013. Available from: https://preserve.lehigh.edu/etd/1641


Kansas State University

18. Hoffman, Timothy B. Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method.

Degree: PhD, Department of Chemical Engineering, 2016, Kansas State University

 Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and… (more)

Subjects/Keywords: Crystal growth; Group III nitrides; Compound semiconductors; Materials science; Chemical engineering; Solution growth

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APA (6th Edition):

Hoffman, T. B. (2016). Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method. (Doctoral Dissertation). Kansas State University. Retrieved from http://hdl.handle.net/2097/32797

Chicago Manual of Style (16th Edition):

Hoffman, Timothy B. “Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method.” 2016. Doctoral Dissertation, Kansas State University. Accessed May 22, 2019. http://hdl.handle.net/2097/32797.

MLA Handbook (7th Edition):

Hoffman, Timothy B. “Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method.” 2016. Web. 22 May 2019.

Vancouver:

Hoffman TB. Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method. [Internet] [Doctoral dissertation]. Kansas State University; 2016. [cited 2019 May 22]. Available from: http://hdl.handle.net/2097/32797.

Council of Science Editors:

Hoffman TB. Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method. [Doctoral Dissertation]. Kansas State University; 2016. Available from: http://hdl.handle.net/2097/32797

19. Gordon, Luke. Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing.

Degree: 2014, University of California – eScholarship, University of California

 Our era is defined by its technology, and our future is dependent on its continued evolution. Over the past few decades, we have witnessed the… (more)

Subjects/Keywords: Materials Science; Density-functional theory; III-nitrides; Oxide interfaces; Quantum computing; Schrodinger-Poisson simulations

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APA (6th Edition):

Gordon, L. (2014). Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/4f58f7fb

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gordon, Luke. “Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing.” 2014. Thesis, University of California – eScholarship, University of California. Accessed May 22, 2019. http://www.escholarship.org/uc/item/4f58f7fb.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gordon, Luke. “Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing.” 2014. Web. 22 May 2019.

Vancouver:

Gordon L. Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing. [Internet] [Thesis]. University of California – eScholarship, University of California; 2014. [cited 2019 May 22]. Available from: http://www.escholarship.org/uc/item/4f58f7fb.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gordon L. Atomic-scale investigations of current and future devices: from nitride-based transistors to quantum computing. [Thesis]. University of California – eScholarship, University of California; 2014. Available from: http://www.escholarship.org/uc/item/4f58f7fb

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Dreyer, Cyrus Eduard. First-principles investigations of III-nitride bulk and surface properties.

Degree: 2014, University of California – eScholarship, University of California

 The III-nitride semiconductors, including AlN, InN, GaN, and BN have been demonstrated as technologically exciting materials for a wide range of device applications. With band… (more)

Subjects/Keywords: Materials Science; Density Functional Theory; effective mass; III-nitrides; spontaneous polarization; surface energy

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APA (6th Edition):

Dreyer, C. E. (2014). First-principles investigations of III-nitride bulk and surface properties. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/32f958ps

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dreyer, Cyrus Eduard. “First-principles investigations of III-nitride bulk and surface properties.” 2014. Thesis, University of California – eScholarship, University of California. Accessed May 22, 2019. http://www.escholarship.org/uc/item/32f958ps.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dreyer, Cyrus Eduard. “First-principles investigations of III-nitride bulk and surface properties.” 2014. Web. 22 May 2019.

Vancouver:

Dreyer CE. First-principles investigations of III-nitride bulk and surface properties. [Internet] [Thesis]. University of California – eScholarship, University of California; 2014. [cited 2019 May 22]. Available from: http://www.escholarship.org/uc/item/32f958ps.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dreyer CE. First-principles investigations of III-nitride bulk and surface properties. [Thesis]. University of California – eScholarship, University of California; 2014. Available from: http://www.escholarship.org/uc/item/32f958ps

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Myzaferi, Anisa. Transparent Conducting Oxide Clad Limited Area Epitaxy Semipolar III-nitride Laser Diodes.

Degree: 2016, University of California – eScholarship, University of California

 Basal plane III-nitride laser diodes have been commercialized for wide ranging technologies, including pico projectors for solid state RGB displays, optical data storage and automotive… (more)

Subjects/Keywords: Electrical engineering; Nanotechnology; Materials Science; III-nitrides; ITO; Lasers; Optoelectronics; Semipolar GaN; ZnO

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APA (6th Edition):

Myzaferi, A. (2016). Transparent Conducting Oxide Clad Limited Area Epitaxy Semipolar III-nitride Laser Diodes. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/07v9q6nj

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Myzaferi, Anisa. “Transparent Conducting Oxide Clad Limited Area Epitaxy Semipolar III-nitride Laser Diodes.” 2016. Thesis, University of California – eScholarship, University of California. Accessed May 22, 2019. http://www.escholarship.org/uc/item/07v9q6nj.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Myzaferi, Anisa. “Transparent Conducting Oxide Clad Limited Area Epitaxy Semipolar III-nitride Laser Diodes.” 2016. Web. 22 May 2019.

Vancouver:

Myzaferi A. Transparent Conducting Oxide Clad Limited Area Epitaxy Semipolar III-nitride Laser Diodes. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2019 May 22]. Available from: http://www.escholarship.org/uc/item/07v9q6nj.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Myzaferi A. Transparent Conducting Oxide Clad Limited Area Epitaxy Semipolar III-nitride Laser Diodes. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/07v9q6nj

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

22. Kuritzky, Leah. Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes.

Degree: 2016, University of California – eScholarship, University of California

 The (Al,Ga,In)N materials system has impacted energy efficiency on the world-wide scale through its application to blue light-emitting diodes (LEDs), which were invented and developed… (more)

Subjects/Keywords: Materials Science; Electrical engineering; Nanotechnology; GaN; III-Nitrides; laser diodes; LEDS; m-plane; ray tracing

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APA (6th Edition):

Kuritzky, L. (2016). Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/51d0763h

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kuritzky, Leah. “Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes.” 2016. Thesis, University of California – eScholarship, University of California. Accessed May 22, 2019. http://www.escholarship.org/uc/item/51d0763h.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kuritzky, Leah. “Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes.” 2016. Web. 22 May 2019.

Vancouver:

Kuritzky L. Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2019 May 22]. Available from: http://www.escholarship.org/uc/item/51d0763h.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kuritzky L. Epitaxy and Device Design for High Efficiency Blue LEDs and Laser Diodes. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/51d0763h

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

23. Leonard, John Thomas. III-Nitride Vertical-Cavity Surface-Emitting Lasers: Growth, Fabrication, and Design of Dual Dielectric DBR Nonpolar VCSELs.

Degree: 2016, University of California – eScholarship, University of California

 Vertical-cavity surface-emitting lasers (VCSELs) have a long history of development in GaAs-based and InP-based systems, however III-nitride VCSELs research is still in its infancy. Yet,… (more)

Subjects/Keywords: Electrical engineering; Engineering; Optics; GaN; III-Nitrides; Laser; m-plane; Nonpolar; VCSEL

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APA (6th Edition):

Leonard, J. T. (2016). III-Nitride Vertical-Cavity Surface-Emitting Lasers: Growth, Fabrication, and Design of Dual Dielectric DBR Nonpolar VCSELs. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/0js053zj

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Leonard, John Thomas. “III-Nitride Vertical-Cavity Surface-Emitting Lasers: Growth, Fabrication, and Design of Dual Dielectric DBR Nonpolar VCSELs.” 2016. Thesis, University of California – eScholarship, University of California. Accessed May 22, 2019. http://www.escholarship.org/uc/item/0js053zj.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Leonard, John Thomas. “III-Nitride Vertical-Cavity Surface-Emitting Lasers: Growth, Fabrication, and Design of Dual Dielectric DBR Nonpolar VCSELs.” 2016. Web. 22 May 2019.

Vancouver:

Leonard JT. III-Nitride Vertical-Cavity Surface-Emitting Lasers: Growth, Fabrication, and Design of Dual Dielectric DBR Nonpolar VCSELs. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2019 May 22]. Available from: http://www.escholarship.org/uc/item/0js053zj.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Leonard JT. III-Nitride Vertical-Cavity Surface-Emitting Lasers: Growth, Fabrication, and Design of Dual Dielectric DBR Nonpolar VCSELs. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/0js053zj

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

24. Forman, Charles Alexander. Achieving Continuous-Wave Lasing for Violet m-plane GaN-Based Vertical-Cavity Surface-Emitting Lasers.

Degree: 2018, University of California – eScholarship, University of California

 Vertical-cavity surface-emitting lasers (VCSELs) are a special class of laser diode that use top-side and bottom-side parallel mirrors to emit a laser beam vertically from… (more)

Subjects/Keywords: Optics; Electrical engineering; Engineering; GaN; III-Nitrides; Laser; m-plane; Nonpolar; VCSEL

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APA (6th Edition):

Forman, C. A. (2018). Achieving Continuous-Wave Lasing for Violet m-plane GaN-Based Vertical-Cavity Surface-Emitting Lasers. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/9gc5v9vn

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Forman, Charles Alexander. “Achieving Continuous-Wave Lasing for Violet m-plane GaN-Based Vertical-Cavity Surface-Emitting Lasers.” 2018. Thesis, University of California – eScholarship, University of California. Accessed May 22, 2019. http://www.escholarship.org/uc/item/9gc5v9vn.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Forman, Charles Alexander. “Achieving Continuous-Wave Lasing for Violet m-plane GaN-Based Vertical-Cavity Surface-Emitting Lasers.” 2018. Web. 22 May 2019.

Vancouver:

Forman CA. Achieving Continuous-Wave Lasing for Violet m-plane GaN-Based Vertical-Cavity Surface-Emitting Lasers. [Internet] [Thesis]. University of California – eScholarship, University of California; 2018. [cited 2019 May 22]. Available from: http://www.escholarship.org/uc/item/9gc5v9vn.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Forman CA. Achieving Continuous-Wave Lasing for Violet m-plane GaN-Based Vertical-Cavity Surface-Emitting Lasers. [Thesis]. University of California – eScholarship, University of California; 2018. Available from: http://www.escholarship.org/uc/item/9gc5v9vn

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

25. Himwas, Charlermchai. Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette : III-Nitride nanostructures for UV emitters.

Degree: Docteur es, Nanophysique, 2015, Grenoble Alpes

Ce travail porte sur la conception, l’épitaxie, et la caractérisation structural et optique de deux types de nanostructures, à savoir des boîtes quantiques AlGaN/AIN et… (more)

Subjects/Keywords: Nitrures III-V; Boîtes quantiques; Nanofils; Épitaxie par jets moléculaires; Ultraviolet; III-nitrides; Quantum dots; Nanowires; Molecular beam epitaxy; Ultraviolet; 530

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APA (6th Edition):

Himwas, C. (2015). Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette : III-Nitride nanostructures for UV emitters. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAY011

Chicago Manual of Style (16th Edition):

Himwas, Charlermchai. “Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette : III-Nitride nanostructures for UV emitters.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed May 22, 2019. http://www.theses.fr/2015GREAY011.

MLA Handbook (7th Edition):

Himwas, Charlermchai. “Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette : III-Nitride nanostructures for UV emitters.” 2015. Web. 22 May 2019.

Vancouver:

Himwas C. Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette : III-Nitride nanostructures for UV emitters. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2019 May 22]. Available from: http://www.theses.fr/2015GREAY011.

Council of Science Editors:

Himwas C. Nanostructures à base de semi-conducteurs nitrures pour l'émission ultraviolette : III-Nitride nanostructures for UV emitters. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAY011


EPFL

26. Shahmohammadi, Mehran. Ultrafast spectroscopy of wide bandgap semiconductor nanostructures.

Degree: 2015, EPFL

 Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue light-emitting… (more)

Subjects/Keywords: III-nitrides; ZnO; external quantum efficiency; excitons; biexcitons; electron-hole plasma; Mott-transition; polariton lasing; exciton binding energy; non-polar QWs

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Shahmohammadi, M. (2015). Ultrafast spectroscopy of wide bandgap semiconductor nanostructures. (Thesis). EPFL. Retrieved from http://infoscience.epfl.ch/record/210609

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Shahmohammadi, Mehran. “Ultrafast spectroscopy of wide bandgap semiconductor nanostructures.” 2015. Thesis, EPFL. Accessed May 22, 2019. http://infoscience.epfl.ch/record/210609.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Shahmohammadi, Mehran. “Ultrafast spectroscopy of wide bandgap semiconductor nanostructures.” 2015. Web. 22 May 2019.

Vancouver:

Shahmohammadi M. Ultrafast spectroscopy of wide bandgap semiconductor nanostructures. [Internet] [Thesis]. EPFL; 2015. [cited 2019 May 22]. Available from: http://infoscience.epfl.ch/record/210609.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Shahmohammadi M. Ultrafast spectroscopy of wide bandgap semiconductor nanostructures. [Thesis]. EPFL; 2015. Available from: http://infoscience.epfl.ch/record/210609

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

27. Pal, Joydeep. Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices.

Degree: PhD, 2013, University of Manchester

 Materials have always had a large impact on society over the different ages. Piezoelectric materials are the often ‘invisible’ materials which find widespread use, unknown… (more)

Subjects/Keywords: 537; Piezoelectricity; Piezotronics; III-Nitrides; Semiconductor Devices

…of the Gr-III-Nitrides Quantum Dots", UK Semiconductors 2011, Sheffield, UK.  J… …compared to the unstrained case.24 Group III-Nitrides with wurtzite crystal structure and having… …this effect in the III-V’s, mainly III-Nitrides and II-VI’s can be found later in chapter 3… …69 3.1.1. ZB III-V Semiconductors… …Results on III-Nitride Semiconductors..................................................85 3.2.1… 

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APA (6th Edition):

Pal, J. (2013). Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/exploiting-non-linear-piezoelectricity-in-novel-semiconductor-based-electronic-devices(9e358fe5-637d-4106-834b-3b2ae40a8a7a).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607006

Chicago Manual of Style (16th Edition):

Pal, Joydeep. “Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices.” 2013. Doctoral Dissertation, University of Manchester. Accessed May 22, 2019. https://www.research.manchester.ac.uk/portal/en/theses/exploiting-non-linear-piezoelectricity-in-novel-semiconductor-based-electronic-devices(9e358fe5-637d-4106-834b-3b2ae40a8a7a).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607006.

MLA Handbook (7th Edition):

Pal, Joydeep. “Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices.” 2013. Web. 22 May 2019.

Vancouver:

Pal J. Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices. [Internet] [Doctoral dissertation]. University of Manchester; 2013. [cited 2019 May 22]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/exploiting-non-linear-piezoelectricity-in-novel-semiconductor-based-electronic-devices(9e358fe5-637d-4106-834b-3b2ae40a8a7a).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607006.

Council of Science Editors:

Pal J. Exploiting non-linear piezoelectricity in novel semiconductor based electronic devices. [Doctoral Dissertation]. University of Manchester; 2013. Available from: https://www.research.manchester.ac.uk/portal/en/theses/exploiting-non-linear-piezoelectricity-in-novel-semiconductor-based-electronic-devices(9e358fe5-637d-4106-834b-3b2ae40a8a7a).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.607006

28. Pal, Joydeep. Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices.

Degree: 2013, University of Manchester

 Materials have always had a large impact on society over the different ages. Piezoelectric materials are the often ‘invisible’ materials which find widespread use, unknown… (more)

Subjects/Keywords: Piezoelectricity; Piezotronics; III-Nitrides; Semiconductor Devices

…of the Gr-III-Nitrides Quantum Dots", UK Semiconductors 2011, Sheffield, UK.  J… …compared to the unstrained case.24 Group III-Nitrides with wurtzite crystal structure and having… …this effect in the III-V’s, mainly III-Nitrides and II-VI’s can be found later in chapter 3… …69 3.1.1. ZB III-V Semiconductors… …Results on III-Nitride Semiconductors..................................................85 3.2.1… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pal, J. (2013). Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:211274

Chicago Manual of Style (16th Edition):

Pal, Joydeep. “Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices.” 2013. Doctoral Dissertation, University of Manchester. Accessed May 22, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:211274.

MLA Handbook (7th Edition):

Pal, Joydeep. “Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices.” 2013. Web. 22 May 2019.

Vancouver:

Pal J. Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices. [Internet] [Doctoral dissertation]. University of Manchester; 2013. [cited 2019 May 22]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:211274.

Council of Science Editors:

Pal J. Exploiting Non Linear Piezoelectricity in Novel Semiconductor based Electronic Devices. [Doctoral Dissertation]. University of Manchester; 2013. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:211274


University of North Texas

29. Butler, Sween J. Nonlinear Light Generation from Optical Cavities and Antennae.

Degree: 2017, University of North Texas

 Semiconductor based micro- and nano-structures grown in a systematic and controlled way using selective area growth are emerging as a promising route toward devices for… (more)

Subjects/Keywords: Nonlinear optics; Frequency conversion; Second harmonic generation; Multi-photon luminescence; Semiconductors; Quantum wells; Group III nitrides

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APA (6th Edition):

Butler, S. J. (2017). Nonlinear Light Generation from Optical Cavities and Antennae. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc984232/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Butler, Sween J. “Nonlinear Light Generation from Optical Cavities and Antennae.” 2017. Thesis, University of North Texas. Accessed May 22, 2019. https://digital.library.unt.edu/ark:/67531/metadc984232/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Butler, Sween J. “Nonlinear Light Generation from Optical Cavities and Antennae.” 2017. Web. 22 May 2019.

Vancouver:

Butler SJ. Nonlinear Light Generation from Optical Cavities and Antennae. [Internet] [Thesis]. University of North Texas; 2017. [cited 2019 May 22]. Available from: https://digital.library.unt.edu/ark:/67531/metadc984232/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Butler SJ. Nonlinear Light Generation from Optical Cavities and Antennae. [Thesis]. University of North Texas; 2017. Available from: https://digital.library.unt.edu/ark:/67531/metadc984232/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Michigan

30. Hazari, Arnab. III-Nitride Nanowire Based Near-Infrared Optoelectronic Devices on (001) Silicon.

Degree: PhD, Electrical Engineering, 2017, University of Michigan

III-nitride-based optoelectronics research has seen rapid progress since the demonstration of the first blue-emitting diode laser by Nakamura et. al. The research has so far… (more)

Subjects/Keywords: III-Nitrides; Nanowires; Silicon Photonics; Molecular Beam Epitaxy; Monolithic Optoelectronic Devices (Laser, Detector, Photonic Circuit); Infrared Detection; Electrical Engineering; Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hazari, A. (2017). III-Nitride Nanowire Based Near-Infrared Optoelectronic Devices on (001) Silicon. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/140959

Chicago Manual of Style (16th Edition):

Hazari, Arnab. “III-Nitride Nanowire Based Near-Infrared Optoelectronic Devices on (001) Silicon.” 2017. Doctoral Dissertation, University of Michigan. Accessed May 22, 2019. http://hdl.handle.net/2027.42/140959.

MLA Handbook (7th Edition):

Hazari, Arnab. “III-Nitride Nanowire Based Near-Infrared Optoelectronic Devices on (001) Silicon.” 2017. Web. 22 May 2019.

Vancouver:

Hazari A. III-Nitride Nanowire Based Near-Infrared Optoelectronic Devices on (001) Silicon. [Internet] [Doctoral dissertation]. University of Michigan; 2017. [cited 2019 May 22]. Available from: http://hdl.handle.net/2027.42/140959.

Council of Science Editors:

Hazari A. III-Nitride Nanowire Based Near-Infrared Optoelectronic Devices on (001) Silicon. [Doctoral Dissertation]. University of Michigan; 2017. Available from: http://hdl.handle.net/2027.42/140959

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