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You searched for subject:(III V). Showing records 1 – 30 of 388 total matches.

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1. 青木, 健志. 次世代高機能集積回路の実現に向けたGaAs系MOSデバイスに関する研究 : GaAs-based Metal-Oxide-Semiconductor devices for next-generation high-performance integrated circuits; ジセダイ コウキノウ シュウセキ カイロ ノ ジツゲン ニ ムケタ GaAsケイ Mos デバイス ニ カンスル ケンキュウ.

Degree: 博士(工学), 2016, Nara Institute of Science and Technology / 奈良先端科学技術大学院大学

Subjects/Keywords: III-V

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APA (6th Edition):

青木, . (2016). 次世代高機能集積回路の実現に向けたGaAs系MOSデバイスに関する研究 : GaAs-based Metal-Oxide-Semiconductor devices for next-generation high-performance integrated circuits; ジセダイ コウキノウ シュウセキ カイロ ノ ジツゲン ニ ムケタ GaAsケイ Mos デバイス ニ カンスル ケンキュウ. (Thesis). Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10061/10651

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

青木, 健志. “次世代高機能集積回路の実現に向けたGaAs系MOSデバイスに関する研究 : GaAs-based Metal-Oxide-Semiconductor devices for next-generation high-performance integrated circuits; ジセダイ コウキノウ シュウセキ カイロ ノ ジツゲン ニ ムケタ GaAsケイ Mos デバイス ニ カンスル ケンキュウ.” 2016. Thesis, Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Accessed February 16, 2020. http://hdl.handle.net/10061/10651.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

青木, 健志. “次世代高機能集積回路の実現に向けたGaAs系MOSデバイスに関する研究 : GaAs-based Metal-Oxide-Semiconductor devices for next-generation high-performance integrated circuits; ジセダイ コウキノウ シュウセキ カイロ ノ ジツゲン ニ ムケタ GaAsケイ Mos デバイス ニ カンスル ケンキュウ.” 2016. Web. 16 Feb 2020.

Vancouver:

青木 . 次世代高機能集積回路の実現に向けたGaAs系MOSデバイスに関する研究 : GaAs-based Metal-Oxide-Semiconductor devices for next-generation high-performance integrated circuits; ジセダイ コウキノウ シュウセキ カイロ ノ ジツゲン ニ ムケタ GaAsケイ Mos デバイス ニ カンスル ケンキュウ. [Internet] [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; 2016. [cited 2020 Feb 16]. Available from: http://hdl.handle.net/10061/10651.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

青木 . 次世代高機能集積回路の実現に向けたGaAs系MOSデバイスに関する研究 : GaAs-based Metal-Oxide-Semiconductor devices for next-generation high-performance integrated circuits; ジセダイ コウキノウ シュウセキ カイロ ノ ジツゲン ニ ムケタ GaAsケイ Mos デバイス ニ カンスル ケンキュウ. [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; 2016. Available from: http://hdl.handle.net/10061/10651

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

2. Bucamp, Alexandre. Croissance sélective et caractérisation de nanostructures de matériaux III-V élaborées par épitaxie par jets moléculaires : Selective area molecular beam epitaxy and characterization of III-V nanostructures.

Degree: Docteur es, Electronique, microélectronique, nanoélectronique et micro-ondes, 2019, Université Lille I – Sciences et Technologies

Que ce soit pour la fabrication de transistors ultimes fonctionnant à haute fréquence et faible consommation d’énergie ou pour celle de composants quantiques exploitant le… (more)

Subjects/Keywords: Semiconducteurs III-V; 621.381 52

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APA (6th Edition):

Bucamp, A. (2019). Croissance sélective et caractérisation de nanostructures de matériaux III-V élaborées par épitaxie par jets moléculaires : Selective area molecular beam epitaxy and characterization of III-V nanostructures. (Doctoral Dissertation). Université Lille I – Sciences et Technologies. Retrieved from http://www.theses.fr/2019LIL1I067

Chicago Manual of Style (16th Edition):

Bucamp, Alexandre. “Croissance sélective et caractérisation de nanostructures de matériaux III-V élaborées par épitaxie par jets moléculaires : Selective area molecular beam epitaxy and characterization of III-V nanostructures.” 2019. Doctoral Dissertation, Université Lille I – Sciences et Technologies. Accessed February 16, 2020. http://www.theses.fr/2019LIL1I067.

MLA Handbook (7th Edition):

Bucamp, Alexandre. “Croissance sélective et caractérisation de nanostructures de matériaux III-V élaborées par épitaxie par jets moléculaires : Selective area molecular beam epitaxy and characterization of III-V nanostructures.” 2019. Web. 16 Feb 2020.

Vancouver:

Bucamp A. Croissance sélective et caractérisation de nanostructures de matériaux III-V élaborées par épitaxie par jets moléculaires : Selective area molecular beam epitaxy and characterization of III-V nanostructures. [Internet] [Doctoral dissertation]. Université Lille I – Sciences et Technologies; 2019. [cited 2020 Feb 16]. Available from: http://www.theses.fr/2019LIL1I067.

Council of Science Editors:

Bucamp A. Croissance sélective et caractérisation de nanostructures de matériaux III-V élaborées par épitaxie par jets moléculaires : Selective area molecular beam epitaxy and characterization of III-V nanostructures. [Doctoral Dissertation]. Université Lille I – Sciences et Technologies; 2019. Available from: http://www.theses.fr/2019LIL1I067

3. Descos, Antoine. Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium : Large eddies simulation of free and impinging plumes.

Degree: Docteur es, Electronique, micro et nano-électronique, optique et laser, 2014, Ecully, Ecole centrale de Lyon

Avec le développement de l’usage d’internet et les nouveaux services tout en ligne, la quantité de données traitée par les data-centers ne cessent de croître.… (more)

Subjects/Keywords: Photonique sur silicium; Matériau III-V; Silicon photonic; Hybrid III-V

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APA (6th Edition):

Descos, A. (2014). Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium : Large eddies simulation of free and impinging plumes. (Doctoral Dissertation). Ecully, Ecole centrale de Lyon. Retrieved from http://www.theses.fr/2014ECDL0050

Chicago Manual of Style (16th Edition):

Descos, Antoine. “Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium : Large eddies simulation of free and impinging plumes.” 2014. Doctoral Dissertation, Ecully, Ecole centrale de Lyon. Accessed February 16, 2020. http://www.theses.fr/2014ECDL0050.

MLA Handbook (7th Edition):

Descos, Antoine. “Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium : Large eddies simulation of free and impinging plumes.” 2014. Web. 16 Feb 2020.

Vancouver:

Descos A. Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium : Large eddies simulation of free and impinging plumes. [Internet] [Doctoral dissertation]. Ecully, Ecole centrale de Lyon; 2014. [cited 2020 Feb 16]. Available from: http://www.theses.fr/2014ECDL0050.

Council of Science Editors:

Descos A. Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium : Large eddies simulation of free and impinging plumes. [Doctoral Dissertation]. Ecully, Ecole centrale de Lyon; 2014. Available from: http://www.theses.fr/2014ECDL0050

4. Cerba, Tiphaine. Intégration de matériaux III-V à base d’arséniures et d’antimoniures pour la réalisation de transistors TriGate et NW à haute mobilité : Integration of III-V materials with arsenides and antimonides for the production of TriGate transistors and high mobility NWFET.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Grenoble Alpes

La miniaturisation des transistors a progressé par noeud technologique avec l’introduction successive de nouveaux matériaux (high k) et de nouvelles architectures (FinFET, NWFET). Pour les… (more)

Subjects/Keywords: Matériaux III-V; TriGate; Nanofils; III-V materials; Trigate; Nanowires; 620

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APA (6th Edition):

Cerba, T. (2018). Intégration de matériaux III-V à base d’arséniures et d’antimoniures pour la réalisation de transistors TriGate et NW à haute mobilité : Integration of III-V materials with arsenides and antimonides for the production of TriGate transistors and high mobility NWFET. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAT082

Chicago Manual of Style (16th Edition):

Cerba, Tiphaine. “Intégration de matériaux III-V à base d’arséniures et d’antimoniures pour la réalisation de transistors TriGate et NW à haute mobilité : Integration of III-V materials with arsenides and antimonides for the production of TriGate transistors and high mobility NWFET.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed February 16, 2020. http://www.theses.fr/2018GREAT082.

MLA Handbook (7th Edition):

Cerba, Tiphaine. “Intégration de matériaux III-V à base d’arséniures et d’antimoniures pour la réalisation de transistors TriGate et NW à haute mobilité : Integration of III-V materials with arsenides and antimonides for the production of TriGate transistors and high mobility NWFET.” 2018. Web. 16 Feb 2020.

Vancouver:

Cerba T. Intégration de matériaux III-V à base d’arséniures et d’antimoniures pour la réalisation de transistors TriGate et NW à haute mobilité : Integration of III-V materials with arsenides and antimonides for the production of TriGate transistors and high mobility NWFET. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2020 Feb 16]. Available from: http://www.theses.fr/2018GREAT082.

Council of Science Editors:

Cerba T. Intégration de matériaux III-V à base d’arséniures et d’antimoniures pour la réalisation de transistors TriGate et NW à haute mobilité : Integration of III-V materials with arsenides and antimonides for the production of TriGate transistors and high mobility NWFET. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAT082

5. Baranov, Artem. Cellules solaires à multijonctions par intégration monolithique de nitrures dilués sur substrats d’arséniure de gallium (GaAs) et de silicium (Si) : études des défauts. : Multijunction Solar Cells from Monolithic Integration of Dilute Nitrides on Gallium Arsenide (GaAs) and Silicon (Si) Wafers : defect studies.

Degree: Docteur es, Electronique et Optoélectronique, Nano- et Microtechnologies, 2018, Université Paris-Saclay (ComUE); Saint Petersburg Academic University (Saint Petersburg)

 Les cellules solaires à multi-jonctions de type III-V possèdent des rendements de conversion de l'énergie très élevés (46%). Cependant, les méthodes de fabrication généralement utilisées… (more)

Subjects/Keywords: Composés III-V; Hétérostructures; Cellules; III-V compounds; Heterostructures; Solar cells

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APA (6th Edition):

Baranov, A. (2018). Cellules solaires à multijonctions par intégration monolithique de nitrures dilués sur substrats d’arséniure de gallium (GaAs) et de silicium (Si) : études des défauts. : Multijunction Solar Cells from Monolithic Integration of Dilute Nitrides on Gallium Arsenide (GaAs) and Silicon (Si) Wafers : defect studies. (Doctoral Dissertation). Université Paris-Saclay (ComUE); Saint Petersburg Academic University (Saint Petersburg). Retrieved from http://www.theses.fr/2018SACLS137

Chicago Manual of Style (16th Edition):

Baranov, Artem. “Cellules solaires à multijonctions par intégration monolithique de nitrures dilués sur substrats d’arséniure de gallium (GaAs) et de silicium (Si) : études des défauts. : Multijunction Solar Cells from Monolithic Integration of Dilute Nitrides on Gallium Arsenide (GaAs) and Silicon (Si) Wafers : defect studies.” 2018. Doctoral Dissertation, Université Paris-Saclay (ComUE); Saint Petersburg Academic University (Saint Petersburg). Accessed February 16, 2020. http://www.theses.fr/2018SACLS137.

MLA Handbook (7th Edition):

Baranov, Artem. “Cellules solaires à multijonctions par intégration monolithique de nitrures dilués sur substrats d’arséniure de gallium (GaAs) et de silicium (Si) : études des défauts. : Multijunction Solar Cells from Monolithic Integration of Dilute Nitrides on Gallium Arsenide (GaAs) and Silicon (Si) Wafers : defect studies.” 2018. Web. 16 Feb 2020.

Vancouver:

Baranov A. Cellules solaires à multijonctions par intégration monolithique de nitrures dilués sur substrats d’arséniure de gallium (GaAs) et de silicium (Si) : études des défauts. : Multijunction Solar Cells from Monolithic Integration of Dilute Nitrides on Gallium Arsenide (GaAs) and Silicon (Si) Wafers : defect studies. [Internet] [Doctoral dissertation]. Université Paris-Saclay (ComUE); Saint Petersburg Academic University (Saint Petersburg); 2018. [cited 2020 Feb 16]. Available from: http://www.theses.fr/2018SACLS137.

Council of Science Editors:

Baranov A. Cellules solaires à multijonctions par intégration monolithique de nitrures dilués sur substrats d’arséniure de gallium (GaAs) et de silicium (Si) : études des défauts. : Multijunction Solar Cells from Monolithic Integration of Dilute Nitrides on Gallium Arsenide (GaAs) and Silicon (Si) Wafers : defect studies. [Doctoral Dissertation]. Université Paris-Saclay (ComUE); Saint Petersburg Academic University (Saint Petersburg); 2018. Available from: http://www.theses.fr/2018SACLS137


Université de Sherbrooke

6. Ridaoui, Mohamed. Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince .

Degree: 2017, Université de Sherbrooke

 Les MOSFETs ultra-thin body UTB ont été fabriqués avec une technologie auto-alignée. Le canal conducteur est constitué d’InGaAs à 75% de taux d’indium ou d’un… (more)

Subjects/Keywords: Matériaux III-V (petit gap); MOSFETs; Ultra-thin body (UTB); Al2O3; Ni/III-V; Hyperfréquence; III-V material; MOSFETS; High frequency

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APA (6th Edition):

Ridaoui, M. (2017). Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince . (Doctoral Dissertation). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/11118

Chicago Manual of Style (16th Edition):

Ridaoui, Mohamed. “Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince .” 2017. Doctoral Dissertation, Université de Sherbrooke. Accessed February 16, 2020. http://hdl.handle.net/11143/11118.

MLA Handbook (7th Edition):

Ridaoui, Mohamed. “Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince .” 2017. Web. 16 Feb 2020.

Vancouver:

Ridaoui M. Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince . [Internet] [Doctoral dissertation]. Université de Sherbrooke; 2017. [cited 2020 Feb 16]. Available from: http://hdl.handle.net/11143/11118.

Council of Science Editors:

Ridaoui M. Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince . [Doctoral Dissertation]. Université de Sherbrooke; 2017. Available from: http://hdl.handle.net/11143/11118


Universidade Estadual de Campinas

7. Silva, Bruno César da, 1988-. Síntese e caracterização estrutural de nanofios de GaP .

Degree: 2016, Universidade Estadual de Campinas

 Resumo: Neste trabalho, estudamos a dinâmica de crescimento de nanofios de GaP crescidos pelo método VLS (Vapor-Líquido-Sólido) via Epitaxia por Feixe Químico (CBE), usando nanopartículas… (more)

Subjects/Keywords: Nanofios III-V; Vapor-líquido-sólido; Epitaxia

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APA (6th Edition):

Silva, Bruno César da, 1. (2016). Síntese e caracterização estrutural de nanofios de GaP . (Thesis). Universidade Estadual de Campinas. Retrieved from http://repositorio.unicamp.br/jspui/handle/REPOSIP/305734

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Silva, Bruno César da, 1988-. “Síntese e caracterização estrutural de nanofios de GaP .” 2016. Thesis, Universidade Estadual de Campinas. Accessed February 16, 2020. http://repositorio.unicamp.br/jspui/handle/REPOSIP/305734.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Silva, Bruno César da, 1988-. “Síntese e caracterização estrutural de nanofios de GaP .” 2016. Web. 16 Feb 2020.

Vancouver:

Silva, Bruno César da 1. Síntese e caracterização estrutural de nanofios de GaP . [Internet] [Thesis]. Universidade Estadual de Campinas; 2016. [cited 2020 Feb 16]. Available from: http://repositorio.unicamp.br/jspui/handle/REPOSIP/305734.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Silva, Bruno César da 1. Síntese e caracterização estrutural de nanofios de GaP . [Thesis]. Universidade Estadual de Campinas; 2016. Available from: http://repositorio.unicamp.br/jspui/handle/REPOSIP/305734

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade Estadual de Campinas

8. Silva, Bruno César da, 1988-. Síntese e caracterização estrutural de nanofios de GaP .

Degree: 2016, Universidade Estadual de Campinas

 Resumo: Neste trabalho, estudamos a dinâmica de crescimento de nanofios de GaP crescidos pelo método VLS (Vapor-Líquido-Sólido) via Epitaxia por Feixe Químico (CBE), usando nanopartículas… (more)

Subjects/Keywords: Nanofios III-V; Vapor-líquido-sólido; Epitaxia

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APA (6th Edition):

Silva, Bruno César da, 1. (2016). Síntese e caracterização estrutural de nanofios de GaP . (Thesis). Universidade Estadual de Campinas. Retrieved from http://repositorio.unicamp.br/jspui/handle/REPOSIP/331662

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Silva, Bruno César da, 1988-. “Síntese e caracterização estrutural de nanofios de GaP .” 2016. Thesis, Universidade Estadual de Campinas. Accessed February 16, 2020. http://repositorio.unicamp.br/jspui/handle/REPOSIP/331662.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Silva, Bruno César da, 1988-. “Síntese e caracterização estrutural de nanofios de GaP .” 2016. Web. 16 Feb 2020.

Vancouver:

Silva, Bruno César da 1. Síntese e caracterização estrutural de nanofios de GaP . [Internet] [Thesis]. Universidade Estadual de Campinas; 2016. [cited 2020 Feb 16]. Available from: http://repositorio.unicamp.br/jspui/handle/REPOSIP/331662.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Silva, Bruno César da 1. Síntese e caracterização estrutural de nanofios de GaP . [Thesis]. Universidade Estadual de Campinas; 2016. Available from: http://repositorio.unicamp.br/jspui/handle/REPOSIP/331662

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

9. Filmer, Matthew J. InAs/GaSb Tunnel Diodes.

Degree: MS, Microelectronic Engineering, 2015, Rochester Institute of Technology

  The Tunneling Field-Effect Transistor (TFET) has shown promise as a possible replacement for the MOSFET, especially in low power applications where power supplies continue… (more)

Subjects/Keywords: BaSb; III-V; InAs; Tunnel diode

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APA (6th Edition):

Filmer, M. J. (2015). InAs/GaSb Tunnel Diodes. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/8747

Chicago Manual of Style (16th Edition):

Filmer, Matthew J. “InAs/GaSb Tunnel Diodes.” 2015. Masters Thesis, Rochester Institute of Technology. Accessed February 16, 2020. https://scholarworks.rit.edu/theses/8747.

MLA Handbook (7th Edition):

Filmer, Matthew J. “InAs/GaSb Tunnel Diodes.” 2015. Web. 16 Feb 2020.

Vancouver:

Filmer MJ. InAs/GaSb Tunnel Diodes. [Internet] [Masters thesis]. Rochester Institute of Technology; 2015. [cited 2020 Feb 16]. Available from: https://scholarworks.rit.edu/theses/8747.

Council of Science Editors:

Filmer MJ. InAs/GaSb Tunnel Diodes. [Masters Thesis]. Rochester Institute of Technology; 2015. Available from: https://scholarworks.rit.edu/theses/8747


University of Notre Dame

10. Timothy J Vasen. Investigation of III-V Tunneling Field-Effect Transistors</h1>.

Degree: PhD, Electrical Engineering, 2014, University of Notre Dame

  This dissertation reviews an investigation of III-V Tunneling Field Effect Transistors (TFETs), both experimentally and by simulation. TFETs are an attractive candidate for low… (more)

Subjects/Keywords: steep swing; TFET; CMOS; III-V

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APA (6th Edition):

Vasen, T. J. (2014). Investigation of III-V Tunneling Field-Effect Transistors</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/th83kw5508r

Chicago Manual of Style (16th Edition):

Vasen, Timothy J. “Investigation of III-V Tunneling Field-Effect Transistors</h1>.” 2014. Doctoral Dissertation, University of Notre Dame. Accessed February 16, 2020. https://curate.nd.edu/show/th83kw5508r.

MLA Handbook (7th Edition):

Vasen, Timothy J. “Investigation of III-V Tunneling Field-Effect Transistors</h1>.” 2014. Web. 16 Feb 2020.

Vancouver:

Vasen TJ. Investigation of III-V Tunneling Field-Effect Transistors</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2014. [cited 2020 Feb 16]. Available from: https://curate.nd.edu/show/th83kw5508r.

Council of Science Editors:

Vasen TJ. Investigation of III-V Tunneling Field-Effect Transistors</h1>. [Doctoral Dissertation]. University of Notre Dame; 2014. Available from: https://curate.nd.edu/show/th83kw5508r


University of Arizona

11. Sears, Jasmine Soria. Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures .

Degree: 2017, University of Arizona

 The fields of telecommunications and optoelectronics are under constant pressure to shrink devices and reduce power consumption. Micro-scale photonic and plasmonic structures can trap light… (more)

Subjects/Keywords: III-V; MBE; Microstructure; Photonic; Plasmonic; Silicon

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APA (6th Edition):

Sears, J. S. (2017). Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/625672

Chicago Manual of Style (16th Edition):

Sears, Jasmine Soria. “Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures .” 2017. Doctoral Dissertation, University of Arizona. Accessed February 16, 2020. http://hdl.handle.net/10150/625672.

MLA Handbook (7th Edition):

Sears, Jasmine Soria. “Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures .” 2017. Web. 16 Feb 2020.

Vancouver:

Sears JS. Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures . [Internet] [Doctoral dissertation]. University of Arizona; 2017. [cited 2020 Feb 16]. Available from: http://hdl.handle.net/10150/625672.

Council of Science Editors:

Sears JS. Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures . [Doctoral Dissertation]. University of Arizona; 2017. Available from: http://hdl.handle.net/10150/625672


ETH Zürich

12. Seifried, Marc. III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources.

Degree: 2018, ETH Zürich

 Data-rich applications, such as cloud computing, video streaming and social media fuel a growing demand for high-performance data centers. Their performance is based on interconnected… (more)

Subjects/Keywords: Silicon Photonics; III-V; Semiconductor Lasers; CMOS

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APA (6th Edition):

Seifried, M. (2018). III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources. (Doctoral Dissertation). ETH Zürich. Retrieved from http://hdl.handle.net/20.500.11850/327330

Chicago Manual of Style (16th Edition):

Seifried, Marc. “III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources.” 2018. Doctoral Dissertation, ETH Zürich. Accessed February 16, 2020. http://hdl.handle.net/20.500.11850/327330.

MLA Handbook (7th Edition):

Seifried, Marc. “III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources.” 2018. Web. 16 Feb 2020.

Vancouver:

Seifried M. III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources. [Internet] [Doctoral dissertation]. ETH Zürich; 2018. [cited 2020 Feb 16]. Available from: http://hdl.handle.net/20.500.11850/327330.

Council of Science Editors:

Seifried M. III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources. [Doctoral Dissertation]. ETH Zürich; 2018. Available from: http://hdl.handle.net/20.500.11850/327330


University of Cambridge

13. Baig, Sarwat. Flexible and substrate-free optoelectronic devices based on III-V semiconductor nanowires.

Degree: PhD, 2019, University of Cambridge

III-V nanowires have been the subject of intense research interest for the past 20 years, as their unique optical and electronic properties, which arise from… (more)

Subjects/Keywords: III-V nanowires; Photovoltaic devices; THz modulator

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APA (6th Edition):

Baig, S. (2019). Flexible and substrate-free optoelectronic devices based on III-V semiconductor nanowires. (Doctoral Dissertation). University of Cambridge. Retrieved from https://www.repository.cam.ac.uk/handle/1810/292059

Chicago Manual of Style (16th Edition):

Baig, Sarwat. “Flexible and substrate-free optoelectronic devices based on III-V semiconductor nanowires.” 2019. Doctoral Dissertation, University of Cambridge. Accessed February 16, 2020. https://www.repository.cam.ac.uk/handle/1810/292059.

MLA Handbook (7th Edition):

Baig, Sarwat. “Flexible and substrate-free optoelectronic devices based on III-V semiconductor nanowires.” 2019. Web. 16 Feb 2020.

Vancouver:

Baig S. Flexible and substrate-free optoelectronic devices based on III-V semiconductor nanowires. [Internet] [Doctoral dissertation]. University of Cambridge; 2019. [cited 2020 Feb 16]. Available from: https://www.repository.cam.ac.uk/handle/1810/292059.

Council of Science Editors:

Baig S. Flexible and substrate-free optoelectronic devices based on III-V semiconductor nanowires. [Doctoral Dissertation]. University of Cambridge; 2019. Available from: https://www.repository.cam.ac.uk/handle/1810/292059


University of Oregon

14. Greenaway, Ann. Close-Spaced Vapor Transport for III-V Solar Absorbing Devices.

Degree: 2018, University of Oregon

 Capture of the energy in sunlight relies mainly on the use of light-absorbing semiconductors, in solar cells and in water-splitting devices. While solar cell efficiency… (more)

Subjects/Keywords: III-V semiconductor; Low-cost; Photoelectrochemistry; Photovoltaics

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APA (6th Edition):

Greenaway, A. (2018). Close-Spaced Vapor Transport for III-V Solar Absorbing Devices. (Thesis). University of Oregon. Retrieved from http://hdl.handle.net/1794/23185

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Greenaway, Ann. “Close-Spaced Vapor Transport for III-V Solar Absorbing Devices.” 2018. Thesis, University of Oregon. Accessed February 16, 2020. http://hdl.handle.net/1794/23185.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Greenaway, Ann. “Close-Spaced Vapor Transport for III-V Solar Absorbing Devices.” 2018. Web. 16 Feb 2020.

Vancouver:

Greenaway A. Close-Spaced Vapor Transport for III-V Solar Absorbing Devices. [Internet] [Thesis]. University of Oregon; 2018. [cited 2020 Feb 16]. Available from: http://hdl.handle.net/1794/23185.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Greenaway A. Close-Spaced Vapor Transport for III-V Solar Absorbing Devices. [Thesis]. University of Oregon; 2018. Available from: http://hdl.handle.net/1794/23185

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Colorado School of Mines

15. Makoutz, Emily. Process development of nanoimprint lithography for selective area growth of III-V materials on silicon.

Degree: MS(M.S.), Physics, 2018, Colorado School of Mines

 Heteroepitaxy of III-V semiconductors on Si substrates is inherently challenging due to the mismatch of various material properties that lead to the formation of dislocations… (more)

Subjects/Keywords: Nanofabrication; III-V semiconductors; Nanoimprint lithography

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APA (6th Edition):

Makoutz, E. (2018). Process development of nanoimprint lithography for selective area growth of III-V materials on silicon. (Masters Thesis). Colorado School of Mines. Retrieved from http://hdl.handle.net/11124/172040

Chicago Manual of Style (16th Edition):

Makoutz, Emily. “Process development of nanoimprint lithography for selective area growth of III-V materials on silicon.” 2018. Masters Thesis, Colorado School of Mines. Accessed February 16, 2020. http://hdl.handle.net/11124/172040.

MLA Handbook (7th Edition):

Makoutz, Emily. “Process development of nanoimprint lithography for selective area growth of III-V materials on silicon.” 2018. Web. 16 Feb 2020.

Vancouver:

Makoutz E. Process development of nanoimprint lithography for selective area growth of III-V materials on silicon. [Internet] [Masters thesis]. Colorado School of Mines; 2018. [cited 2020 Feb 16]. Available from: http://hdl.handle.net/11124/172040.

Council of Science Editors:

Makoutz E. Process development of nanoimprint lithography for selective area growth of III-V materials on silicon. [Masters Thesis]. Colorado School of Mines; 2018. Available from: http://hdl.handle.net/11124/172040


Rochester Institute of Technology

16. Nelson, George Thomas, IV. Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes.

Degree: PhD, Microsystems Engineering, 2019, Rochester Institute of Technology

  Photodiodes made of III-V materials are ubiquitous with applications for telecommunications, photonics, consumer electronics, and spectroscopy. The III-V solar cell, specifically, is a large-area… (more)

Subjects/Keywords: DLTS; III-V; Photodiode; Semiconductor; Solar cells

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APA (6th Edition):

Nelson, George Thomas, I. (2019). Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/10100

Chicago Manual of Style (16th Edition):

Nelson, George Thomas, IV. “Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes.” 2019. Doctoral Dissertation, Rochester Institute of Technology. Accessed February 16, 2020. https://scholarworks.rit.edu/theses/10100.

MLA Handbook (7th Edition):

Nelson, George Thomas, IV. “Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes.” 2019. Web. 16 Feb 2020.

Vancouver:

Nelson, George Thomas I. Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2019. [cited 2020 Feb 16]. Available from: https://scholarworks.rit.edu/theses/10100.

Council of Science Editors:

Nelson, George Thomas I. Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes. [Doctoral Dissertation]. Rochester Institute of Technology; 2019. Available from: https://scholarworks.rit.edu/theses/10100


Queens University

17. McLaughlin, Dirk. Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells .

Degree: Mechanical and Materials Engineering, 2011, Queens University

 The semiconductor alloy indium gallium nitride (InxGa1-xN) offers substantial potential in the development of high-efficiency multi-junction photovoltaic devices due to its wide range of direct… (more)

Subjects/Keywords: Photovoltaics; III-V Alloy; Semiconductor Characterization

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APA (6th Edition):

McLaughlin, D. (2011). Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells . (Thesis). Queens University. Retrieved from http://hdl.handle.net/1974/6809

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

McLaughlin, Dirk. “Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells .” 2011. Thesis, Queens University. Accessed February 16, 2020. http://hdl.handle.net/1974/6809.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

McLaughlin, Dirk. “Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells .” 2011. Web. 16 Feb 2020.

Vancouver:

McLaughlin D. Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells . [Internet] [Thesis]. Queens University; 2011. [cited 2020 Feb 16]. Available from: http://hdl.handle.net/1974/6809.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

McLaughlin D. Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells . [Thesis]. Queens University; 2011. Available from: http://hdl.handle.net/1974/6809

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

18. Wang, Yanzhen. Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs.

Degree: PhD, Electrical and Computer Engineering, 2013, University of Texas – Austin

 In the past few decades, Si-based CMOS technology is approaching to its physical quantum limit by scaling down the gate length and gate oxide thickness… (more)

Subjects/Keywords: High k; III-V; SiOx ReRAM

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APA (6th Edition):

Wang, Y. (2013). Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/21961

Chicago Manual of Style (16th Edition):

Wang, Yanzhen. “Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs.” 2013. Doctoral Dissertation, University of Texas – Austin. Accessed February 16, 2020. http://hdl.handle.net/2152/21961.

MLA Handbook (7th Edition):

Wang, Yanzhen. “Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs.” 2013. Web. 16 Feb 2020.

Vancouver:

Wang Y. Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2013. [cited 2020 Feb 16]. Available from: http://hdl.handle.net/2152/21961.

Council of Science Editors:

Wang Y. Investigation of electrical and material characteristics of high-k / III-V MOS devices and SiOx ReRAMs. [Doctoral Dissertation]. University of Texas – Austin; 2013. Available from: http://hdl.handle.net/2152/21961


University of Lund

19. Zota, Cezar. III-V MOSFETs for High-Frequency and Digital Applications.

Degree: 2017, University of Lund

III-V compound semiconductors are used in, among many other things, high-frequency electronics. They are also considered as a replacement for silicon in CMOS technology. Yet,… (more)

Subjects/Keywords: Engineering and Technology; III-V; MOSFET; Transistor

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APA (6th Edition):

Zota, C. (2017). III-V MOSFETs for High-Frequency and Digital Applications. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/bd0beb77-f687-476d-a7db-25bcc1d915d9 ; https://portal.research.lu.se/ws/files/23814249/CBZ_THESIS_20170410.pdf

Chicago Manual of Style (16th Edition):

Zota, Cezar. “III-V MOSFETs for High-Frequency and Digital Applications.” 2017. Doctoral Dissertation, University of Lund. Accessed February 16, 2020. https://lup.lub.lu.se/record/bd0beb77-f687-476d-a7db-25bcc1d915d9 ; https://portal.research.lu.se/ws/files/23814249/CBZ_THESIS_20170410.pdf.

MLA Handbook (7th Edition):

Zota, Cezar. “III-V MOSFETs for High-Frequency and Digital Applications.” 2017. Web. 16 Feb 2020.

Vancouver:

Zota C. III-V MOSFETs for High-Frequency and Digital Applications. [Internet] [Doctoral dissertation]. University of Lund; 2017. [cited 2020 Feb 16]. Available from: https://lup.lub.lu.se/record/bd0beb77-f687-476d-a7db-25bcc1d915d9 ; https://portal.research.lu.se/ws/files/23814249/CBZ_THESIS_20170410.pdf.

Council of Science Editors:

Zota C. III-V MOSFETs for High-Frequency and Digital Applications. [Doctoral Dissertation]. University of Lund; 2017. Available from: https://lup.lub.lu.se/record/bd0beb77-f687-476d-a7db-25bcc1d915d9 ; https://portal.research.lu.se/ws/files/23814249/CBZ_THESIS_20170410.pdf

20. Quinci, Thomas. Composant photovoltaïque innovant à base d’hétérojonction GaP/Si : New photovoltaic device based on GaP/Si heterojunctions.

Degree: Docteur es, Sciences des matériaux, 2015, Rennes, INSA

L’objectif de ce travail de thèse a été d’étudier une alternative à la cellule photovoltaïque à hétérojonction classique de silicium amorphe/cristallin avec un matériau (GaP)… (more)

Subjects/Keywords: III/V – Si; GaP; Photovoltaic power generation; Silicon; Heterojunctions; III/V – Si; GaP; 621

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APA (6th Edition):

Quinci, T. (2015). Composant photovoltaïque innovant à base d’hétérojonction GaP/Si : New photovoltaic device based on GaP/Si heterojunctions. (Doctoral Dissertation). Rennes, INSA. Retrieved from http://www.theses.fr/2015ISAR0016

Chicago Manual of Style (16th Edition):

Quinci, Thomas. “Composant photovoltaïque innovant à base d’hétérojonction GaP/Si : New photovoltaic device based on GaP/Si heterojunctions.” 2015. Doctoral Dissertation, Rennes, INSA. Accessed February 16, 2020. http://www.theses.fr/2015ISAR0016.

MLA Handbook (7th Edition):

Quinci, Thomas. “Composant photovoltaïque innovant à base d’hétérojonction GaP/Si : New photovoltaic device based on GaP/Si heterojunctions.” 2015. Web. 16 Feb 2020.

Vancouver:

Quinci T. Composant photovoltaïque innovant à base d’hétérojonction GaP/Si : New photovoltaic device based on GaP/Si heterojunctions. [Internet] [Doctoral dissertation]. Rennes, INSA; 2015. [cited 2020 Feb 16]. Available from: http://www.theses.fr/2015ISAR0016.

Council of Science Editors:

Quinci T. Composant photovoltaïque innovant à base d’hétérojonction GaP/Si : New photovoltaic device based on GaP/Si heterojunctions. [Doctoral Dissertation]. Rennes, INSA; 2015. Available from: http://www.theses.fr/2015ISAR0016

21. Chery, Nicolas. Analyse de la structure locale et propriétés optiques de semiconducteurs nitrures pour le développement des diodes électroluminescentes efficaces au-delà du vert. : Analysis of the local structure and optical properties of nitrides semiconductors for LEDs beyond the green wavelength range.

Degree: Docteur es, Physique, 2018, Normandie

Les puits quantiques InGaN/GaN montrent la plus grande efficacité connue dans le bleu-UV et le défi actuel dans ce type de matériau est de pousser… (more)

Subjects/Keywords: Semiconducteurs III-V; III-V semiconductors; Quantum wells; Transmission electron microscopy; X-ray diffraction; Defects

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APA (6th Edition):

Chery, N. (2018). Analyse de la structure locale et propriétés optiques de semiconducteurs nitrures pour le développement des diodes électroluminescentes efficaces au-delà du vert. : Analysis of the local structure and optical properties of nitrides semiconductors for LEDs beyond the green wavelength range. (Doctoral Dissertation). Normandie. Retrieved from http://www.theses.fr/2018NORMC265

Chicago Manual of Style (16th Edition):

Chery, Nicolas. “Analyse de la structure locale et propriétés optiques de semiconducteurs nitrures pour le développement des diodes électroluminescentes efficaces au-delà du vert. : Analysis of the local structure and optical properties of nitrides semiconductors for LEDs beyond the green wavelength range.” 2018. Doctoral Dissertation, Normandie. Accessed February 16, 2020. http://www.theses.fr/2018NORMC265.

MLA Handbook (7th Edition):

Chery, Nicolas. “Analyse de la structure locale et propriétés optiques de semiconducteurs nitrures pour le développement des diodes électroluminescentes efficaces au-delà du vert. : Analysis of the local structure and optical properties of nitrides semiconductors for LEDs beyond the green wavelength range.” 2018. Web. 16 Feb 2020.

Vancouver:

Chery N. Analyse de la structure locale et propriétés optiques de semiconducteurs nitrures pour le développement des diodes électroluminescentes efficaces au-delà du vert. : Analysis of the local structure and optical properties of nitrides semiconductors for LEDs beyond the green wavelength range. [Internet] [Doctoral dissertation]. Normandie; 2018. [cited 2020 Feb 16]. Available from: http://www.theses.fr/2018NORMC265.

Council of Science Editors:

Chery N. Analyse de la structure locale et propriétés optiques de semiconducteurs nitrures pour le développement des diodes électroluminescentes efficaces au-delà du vert. : Analysis of the local structure and optical properties of nitrides semiconductors for LEDs beyond the green wavelength range. [Doctoral Dissertation]. Normandie; 2018. Available from: http://www.theses.fr/2018NORMC265

22. Piazza, Valerio. Electron Beam-based Techniques for the Characterization of Nanowire Solar Cells : Caractérisation des Cellules Solaires à Nanofils avec Techniques par Faisceau d’Electrons.

Degree: Docteur es, Electronique et Optoélectronique, Nano- et Microtechnologies, 2018, Université Paris-Saclay (ComUE)

Bien que les nanofils III-V soient reconnus comme des candidats prometteurs pour le développement de cellules solaires de nouvelle génération pour leurs propriétés optiques très… (more)

Subjects/Keywords: Cellules solaires; III-V; Nanofils; EBIC; CL; Solar cell; III-V; Nanowire; EBIC; CL

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APA (6th Edition):

Piazza, V. (2018). Electron Beam-based Techniques for the Characterization of Nanowire Solar Cells : Caractérisation des Cellules Solaires à Nanofils avec Techniques par Faisceau d’Electrons. (Doctoral Dissertation). Université Paris-Saclay (ComUE). Retrieved from http://www.theses.fr/2018SACLS521

Chicago Manual of Style (16th Edition):

Piazza, Valerio. “Electron Beam-based Techniques for the Characterization of Nanowire Solar Cells : Caractérisation des Cellules Solaires à Nanofils avec Techniques par Faisceau d’Electrons.” 2018. Doctoral Dissertation, Université Paris-Saclay (ComUE). Accessed February 16, 2020. http://www.theses.fr/2018SACLS521.

MLA Handbook (7th Edition):

Piazza, Valerio. “Electron Beam-based Techniques for the Characterization of Nanowire Solar Cells : Caractérisation des Cellules Solaires à Nanofils avec Techniques par Faisceau d’Electrons.” 2018. Web. 16 Feb 2020.

Vancouver:

Piazza V. Electron Beam-based Techniques for the Characterization of Nanowire Solar Cells : Caractérisation des Cellules Solaires à Nanofils avec Techniques par Faisceau d’Electrons. [Internet] [Doctoral dissertation]. Université Paris-Saclay (ComUE); 2018. [cited 2020 Feb 16]. Available from: http://www.theses.fr/2018SACLS521.

Council of Science Editors:

Piazza V. Electron Beam-based Techniques for the Characterization of Nanowire Solar Cells : Caractérisation des Cellules Solaires à Nanofils avec Techniques par Faisceau d’Electrons. [Doctoral Dissertation]. Université Paris-Saclay (ComUE); 2018. Available from: http://www.theses.fr/2018SACLS521


Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

23. Soumelidou, Maria-Marianna. Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας.

Degree: 2017, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

The aim of the present thesis was the study of the electronic, structural and elastic properties of III-nitrides and their alloys using both experimental techniques… (more)

Subjects/Keywords: Νιτρίδια III-V; Ατομιστική προσομοίωση; III-Nitrides; Atomistic simulations

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APA (6th Edition):

Soumelidou, M. (2017). Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας. (Thesis). Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Retrieved from http://hdl.handle.net/10442/hedi/42069

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Soumelidou, Maria-Marianna. “Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας.” 2017. Thesis, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Accessed February 16, 2020. http://hdl.handle.net/10442/hedi/42069.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Soumelidou, Maria-Marianna. “Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας.” 2017. Web. 16 Feb 2020.

Vancouver:

Soumelidou M. Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας. [Internet] [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. [cited 2020 Feb 16]. Available from: http://hdl.handle.net/10442/hedi/42069.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Soumelidou M. Μελέτη ηλεκτρονικών και ελαστικών ιδιοτήτων ημιαγωγικών ενώσεων ΙΙΙ-νιτριδίων από παρατηρήσεις ηλεκτρονικής μικροσκοπίας. [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2017. Available from: http://hdl.handle.net/10442/hedi/42069

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universitat Rovira i Virgili

24. Yigletu, Fetene Mulugeta. Physics-based compact model of HEMTs for circuit simulation.

Degree: Departament d'Enginyeria Electrònica, Elèctrica i Automàtica, 2014, Universitat Rovira i Virgili

 Esta tesis trata el modelado de dispositivos III-V HEMTs. Se presenta un modelo compacto, de base física, de AlGaN/GaN HEMTs para la simulación de circuitos.… (more)

Subjects/Keywords: HEMT; MODELAT COMPACTE; MATERIALS III-V; MODELADO COMPACTO; MATERIALES III-V; HERRAMIENTAS EDA; COMPACT MODELING; III-V MATERIALS; EDA TOOLS; 537; 62; 621.3

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yigletu, F. M. (2014). Physics-based compact model of HEMTs for circuit simulation. (Thesis). Universitat Rovira i Virgili. Retrieved from http://hdl.handle.net/10803/293908

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yigletu, Fetene Mulugeta. “Physics-based compact model of HEMTs for circuit simulation.” 2014. Thesis, Universitat Rovira i Virgili. Accessed February 16, 2020. http://hdl.handle.net/10803/293908.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yigletu, Fetene Mulugeta. “Physics-based compact model of HEMTs for circuit simulation.” 2014. Web. 16 Feb 2020.

Vancouver:

Yigletu FM. Physics-based compact model of HEMTs for circuit simulation. [Internet] [Thesis]. Universitat Rovira i Virgili; 2014. [cited 2020 Feb 16]. Available from: http://hdl.handle.net/10803/293908.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yigletu FM. Physics-based compact model of HEMTs for circuit simulation. [Thesis]. Universitat Rovira i Virgili; 2014. Available from: http://hdl.handle.net/10803/293908

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

25. Gorbenko, Viktoriia. Caractérisation par faisceaux d’ions d’hétérostructures III-V pour les applications micro et optoélectroniques : Ion beam characterisation of III-V heterostructures for micro and optoelectronic applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes

L'intégration de composés semi-conducteurs III-V sur silicium devrait conduire au développement de nouveaux dispositifs micro- et optoélectroniques performants. Le composé InGaAs de haute mobilité électronique… (more)

Subjects/Keywords: III-V hétérostructures; SIMS; FinFET; Microélectronique; Optoélectronique; Puits quantique; III-V heterostructures; SIMS; FinFET; Microelectronics; Optoelectronics; Quantum wells; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gorbenko, V. (2015). Caractérisation par faisceaux d’ions d’hétérostructures III-V pour les applications micro et optoélectroniques : Ion beam characterisation of III-V heterostructures for micro and optoelectronic applications. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAT140

Chicago Manual of Style (16th Edition):

Gorbenko, Viktoriia. “Caractérisation par faisceaux d’ions d’hétérostructures III-V pour les applications micro et optoélectroniques : Ion beam characterisation of III-V heterostructures for micro and optoelectronic applications.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed February 16, 2020. http://www.theses.fr/2015GREAT140.

MLA Handbook (7th Edition):

Gorbenko, Viktoriia. “Caractérisation par faisceaux d’ions d’hétérostructures III-V pour les applications micro et optoélectroniques : Ion beam characterisation of III-V heterostructures for micro and optoelectronic applications.” 2015. Web. 16 Feb 2020.

Vancouver:

Gorbenko V. Caractérisation par faisceaux d’ions d’hétérostructures III-V pour les applications micro et optoélectroniques : Ion beam characterisation of III-V heterostructures for micro and optoelectronic applications. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2020 Feb 16]. Available from: http://www.theses.fr/2015GREAT140.

Council of Science Editors:

Gorbenko V. Caractérisation par faisceaux d’ions d’hétérostructures III-V pour les applications micro et optoélectroniques : Ion beam characterisation of III-V heterostructures for micro and optoelectronic applications. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAT140

26. Cipro, Romain. Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique : Metalorganic vapour phase epitaxy and characterization of III-As semiconductors on silicon substrate in a microelectronic platform.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2016, Grenoble Alpes

Les dispositifs microélectroniques réalisés en technologie silicium possèdent des limitations intrinsèques liées à ce matériau et ses dérivés (Si, SiO2, SiGe…). Une des solutions pour… (more)

Subjects/Keywords: Hétéroépitaxie; Arseniures; Iii-V; Parois d'antiphase; Puits quantiques; Mocvd; Heteroepitaxy; Arsenides; Iii-V; Antiphase boundaries; Quantum wells; Mocvd; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Cipro, R. (2016). Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique : Metalorganic vapour phase epitaxy and characterization of III-As semiconductors on silicon substrate in a microelectronic platform. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAT049

Chicago Manual of Style (16th Edition):

Cipro, Romain. “Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique : Metalorganic vapour phase epitaxy and characterization of III-As semiconductors on silicon substrate in a microelectronic platform.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed February 16, 2020. http://www.theses.fr/2016GREAT049.

MLA Handbook (7th Edition):

Cipro, Romain. “Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique : Metalorganic vapour phase epitaxy and characterization of III-As semiconductors on silicon substrate in a microelectronic platform.” 2016. Web. 16 Feb 2020.

Vancouver:

Cipro R. Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique : Metalorganic vapour phase epitaxy and characterization of III-As semiconductors on silicon substrate in a microelectronic platform. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2020 Feb 16]. Available from: http://www.theses.fr/2016GREAT049.

Council of Science Editors:

Cipro R. Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique : Metalorganic vapour phase epitaxy and characterization of III-As semiconductors on silicon substrate in a microelectronic platform. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAT049


NSYSU

27. Chen, Tsu-Chi. Fenton-like Reaction of As(III) in a Simulated Subsurface Environment via Injection of Nanoiron Slurry Combined with the Electrokinetic Process.

Degree: Master, Environmental Engineering, 2010, NSYSU

 Abstract The object of this study was to investigate the synthesis of a nanoscale zero-valent iron slurry (NZVIS) for use in Fenton-like reactions, and to… (more)

Subjects/Keywords: Fenton-like reaction; Nanoiron slurry; Electrokinetic; Arsenite As(III); Arsenate As(V); As(V); As(III)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, T. (2010). Fenton-like Reaction of As(III) in a Simulated Subsurface Environment via Injection of Nanoiron Slurry Combined with the Electrokinetic Process. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0825110-214424

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Tsu-Chi. “Fenton-like Reaction of As(III) in a Simulated Subsurface Environment via Injection of Nanoiron Slurry Combined with the Electrokinetic Process.” 2010. Thesis, NSYSU. Accessed February 16, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0825110-214424.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Tsu-Chi. “Fenton-like Reaction of As(III) in a Simulated Subsurface Environment via Injection of Nanoiron Slurry Combined with the Electrokinetic Process.” 2010. Web. 16 Feb 2020.

Vancouver:

Chen T. Fenton-like Reaction of As(III) in a Simulated Subsurface Environment via Injection of Nanoiron Slurry Combined with the Electrokinetic Process. [Internet] [Thesis]. NSYSU; 2010. [cited 2020 Feb 16]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0825110-214424.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen T. Fenton-like Reaction of As(III) in a Simulated Subsurface Environment via Injection of Nanoiron Slurry Combined with the Electrokinetic Process. [Thesis]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0825110-214424

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

28. Maurice, Axel. Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects.

Degree: Docteur es, Nanophysique, 2013, Université de Grenoble

Depuis quelques années, les diodes électroluminescentes organiques (OLEDs) connaissent un véritable essor se traduisant par leur intégration progressive au sein d'appareils électroniques « grand public… (more)

Subjects/Keywords: Nano-objets; Semi-conducteur; III-V; Antimoniure d'indium; Phosphure d'indium; Nano-objects; Semiconductor; III-V; Indium antimonide; Indium phosphide; 530

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Maurice, A. (2013). Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2013GRENY064

Chicago Manual of Style (16th Edition):

Maurice, Axel. “Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects.” 2013. Doctoral Dissertation, Université de Grenoble. Accessed February 16, 2020. http://www.theses.fr/2013GRENY064.

MLA Handbook (7th Edition):

Maurice, Axel. “Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects.” 2013. Web. 16 Feb 2020.

Vancouver:

Maurice A. Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects. [Internet] [Doctoral dissertation]. Université de Grenoble; 2013. [cited 2020 Feb 16]. Available from: http://www.theses.fr/2013GRENY064.

Council of Science Editors:

Maurice A. Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects. [Doctoral Dissertation]. Université de Grenoble; 2013. Available from: http://www.theses.fr/2013GRENY064

29. Alcotte, Reynald. Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Grenoble Alpes

Avec l’avènement de l’internet des objets, la diversification des moyens de communication et l’augmentation de la puissance de calcul des processeurs, les besoins en termes… (more)

Subjects/Keywords: Hétéroépitaxie; Semiconducteurs III-V; Silicium; Arséniures; Mocvd; Résistivité de contact; Heteroepitaxy; Semiconductors III-V; Silicon; Arsenides; Mocvd; Contact resistivity; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Alcotte, R. (2018). Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAT005

Chicago Manual of Style (16th Edition):

Alcotte, Reynald. “Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed February 16, 2020. http://www.theses.fr/2018GREAT005.

MLA Handbook (7th Edition):

Alcotte, Reynald. “Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon.” 2018. Web. 16 Feb 2020.

Vancouver:

Alcotte R. Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2020 Feb 16]. Available from: http://www.theses.fr/2018GREAT005.

Council of Science Editors:

Alcotte R. Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAT005

30. Hiblot, Gaspard. Modélisation compacte de transistors MOSFETs à canal III-V et films minces pour applications CMOS avancées : Compact modeling of MOSFETs transistors with III-V channels and thin film for advanced CMOS applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes

Les MOSFET III-V sont considérés comme des candidats potentiels pour les futures générations d'applications à base de logique CMOS, grâce à leurs remarquables propriétés de… (more)

Subjects/Keywords: Cmos; Mosfet; Modélisation; Iii-V; Films minces; Cmos; Mosfet; Modeling; III-V channel; Thin films; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hiblot, G. (2015). Modélisation compacte de transistors MOSFETs à canal III-V et films minces pour applications CMOS avancées : Compact modeling of MOSFETs transistors with III-V channels and thin film for advanced CMOS applications. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAT066

Chicago Manual of Style (16th Edition):

Hiblot, Gaspard. “Modélisation compacte de transistors MOSFETs à canal III-V et films minces pour applications CMOS avancées : Compact modeling of MOSFETs transistors with III-V channels and thin film for advanced CMOS applications.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed February 16, 2020. http://www.theses.fr/2015GREAT066.

MLA Handbook (7th Edition):

Hiblot, Gaspard. “Modélisation compacte de transistors MOSFETs à canal III-V et films minces pour applications CMOS avancées : Compact modeling of MOSFETs transistors with III-V channels and thin film for advanced CMOS applications.” 2015. Web. 16 Feb 2020.

Vancouver:

Hiblot G. Modélisation compacte de transistors MOSFETs à canal III-V et films minces pour applications CMOS avancées : Compact modeling of MOSFETs transistors with III-V channels and thin film for advanced CMOS applications. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2020 Feb 16]. Available from: http://www.theses.fr/2015GREAT066.

Council of Science Editors:

Hiblot G. Modélisation compacte de transistors MOSFETs à canal III-V et films minces pour applications CMOS avancées : Compact modeling of MOSFETs transistors with III-V channels and thin film for advanced CMOS applications. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAT066

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