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You searched for subject:(III V on silicon). Showing records 1 – 30 of 26529 total matches.

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University of California – Berkeley

1. Tran, Thai-Truong Du. III-V Micropillars on Silicon for Large Scale III-V Photovoltaics and On-Chip Optical Communication.

Degree: Applied Science & Technology, 2013, University of California – Berkeley

 The synthesis of III-V nanowires and pillar-structures on silicon is a promising approach for realizing low cost, large scale III-V photovoltaics. However, performances of III-V(more)

Subjects/Keywords: Nanotechnology; Optics; Materials Science; III-V Integration on Silicon; Lasers on Silicon; Nanolasers; Nanowires; Photovoltaics; Solar Cells

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tran, T. D. (2013). III-V Micropillars on Silicon for Large Scale III-V Photovoltaics and On-Chip Optical Communication. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/5rf9p9tc

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tran, Thai-Truong Du. “III-V Micropillars on Silicon for Large Scale III-V Photovoltaics and On-Chip Optical Communication.” 2013. Thesis, University of California – Berkeley. Accessed September 19, 2019. http://www.escholarship.org/uc/item/5rf9p9tc.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tran, Thai-Truong Du. “III-V Micropillars on Silicon for Large Scale III-V Photovoltaics and On-Chip Optical Communication.” 2013. Web. 19 Sep 2019.

Vancouver:

Tran TD. III-V Micropillars on Silicon for Large Scale III-V Photovoltaics and On-Chip Optical Communication. [Internet] [Thesis]. University of California – Berkeley; 2013. [cited 2019 Sep 19]. Available from: http://www.escholarship.org/uc/item/5rf9p9tc.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tran TD. III-V Micropillars on Silicon for Large Scale III-V Photovoltaics and On-Chip Optical Communication. [Thesis]. University of California – Berkeley; 2013. Available from: http://www.escholarship.org/uc/item/5rf9p9tc

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

2. Ferrotti, Thomas. Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications : Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications.

Degree: Docteur es, Electronique, micro et nano-électronique, optique et laser, 2016, Lyon

Depuis plusieurs années, le volume de données échangé à travers le monde augmente sans cesse. Pour gérer cette large quantité d’information, des débits élevés de… (more)

Subjects/Keywords: Photonique sur silicium; Circuits photoniques intégrés; Lasers hybrides III-V sur silicium; Modulateurs Mach-Zehnder; Silicon photonics; Integrated photonic circuits; Hybrid III-V on silicon lasers; Mach-Zehnder modulators

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APA (6th Edition):

Ferrotti, T. (2016). Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications : Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2016LYSEC054

Chicago Manual of Style (16th Edition):

Ferrotti, Thomas. “Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications : Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications.” 2016. Doctoral Dissertation, Lyon. Accessed September 19, 2019. http://www.theses.fr/2016LYSEC054.

MLA Handbook (7th Edition):

Ferrotti, Thomas. “Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications : Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications.” 2016. Web. 19 Sep 2019.

Vancouver:

Ferrotti T. Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications : Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications. [Internet] [Doctoral dissertation]. Lyon; 2016. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2016LYSEC054.

Council of Science Editors:

Ferrotti T. Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications : Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications. [Doctoral Dissertation]. Lyon; 2016. Available from: http://www.theses.fr/2016LYSEC054

3. Descos, Antoine. Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium : Large eddies simulation of free and impinging plumes.

Degree: Docteur es, Electronique, micro et nano-électronique, optique et laser, 2014, Ecully, Ecole centrale de Lyon

Avec le développement de l’usage d’internet et les nouveaux services tout en ligne, la quantité de données traitée par les data-centers ne cessent de croître.… (more)

Subjects/Keywords: Photonique sur silicium; Matériau III-V; Silicon photonic; Hybrid III-V

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APA (6th Edition):

Descos, A. (2014). Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium : Large eddies simulation of free and impinging plumes. (Doctoral Dissertation). Ecully, Ecole centrale de Lyon. Retrieved from http://www.theses.fr/2014ECDL0050

Chicago Manual of Style (16th Edition):

Descos, Antoine. “Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium : Large eddies simulation of free and impinging plumes.” 2014. Doctoral Dissertation, Ecully, Ecole centrale de Lyon. Accessed September 19, 2019. http://www.theses.fr/2014ECDL0050.

MLA Handbook (7th Edition):

Descos, Antoine. “Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium : Large eddies simulation of free and impinging plumes.” 2014. Web. 19 Sep 2019.

Vancouver:

Descos A. Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium : Large eddies simulation of free and impinging plumes. [Internet] [Doctoral dissertation]. Ecully, Ecole centrale de Lyon; 2014. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2014ECDL0050.

Council of Science Editors:

Descos A. Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium : Large eddies simulation of free and impinging plumes. [Doctoral Dissertation]. Ecully, Ecole centrale de Lyon; 2014. Available from: http://www.theses.fr/2014ECDL0050

4. Cunningham, Thiess. Quantitative Mobility Spectrum Analysis.

Degree: 2013

Subjects/Keywords: QMSA; III-V; heterostructures; III-V on silicon; SEMATECH; Cunningham; Droopad

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APA (6th Edition):

Cunningham, T. (2013). Quantitative Mobility Spectrum Analysis. (Thesis). [No school.] Retrieved from http://hdl.handle.net/2249.1/62717

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No school.

Chicago Manual of Style (16th Edition):

Cunningham, Thiess. “Quantitative Mobility Spectrum Analysis.” 2013. Thesis, [No school]. Accessed September 19, 2019. http://hdl.handle.net/2249.1/62717.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No school.

MLA Handbook (7th Edition):

Cunningham, Thiess. “Quantitative Mobility Spectrum Analysis.” 2013. Web. 19 Sep 2019.

Vancouver:

Cunningham T. Quantitative Mobility Spectrum Analysis. [Internet] [Thesis]. [No school]; 2013. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/2249.1/62717.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No school.

Council of Science Editors:

Cunningham T. Quantitative Mobility Spectrum Analysis. [Thesis]. [No school]; 2013. Available from: http://hdl.handle.net/2249.1/62717

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No school.

5. Levaufre, Guillaume. Circuits photoniques intégrés incluant des lasers hybrides III-V sur silicium pour applications en télécommunication très haut débit : Photonic Integrated Circuits including hybrid III-V on Silicon lasers for very high-speed telecommunication applications.

Degree: Docteur es, Électronique et optoélectronique, nano- et microtechnologies, 2016, Paris Saclay

Les travaux de cette thèse portent sur le développement des Circuits Photoniques Intégrés issus de la plateforme d’intégration hétérogène de matériaux III-V sur silicium. Les… (more)

Subjects/Keywords: Circuits Photoniques Intégrés; Lasers hybrides; III-V sur Silicium; Telecommunications; Ngpon2; Transmetteur; Photonic Integrated Circuits; Hybrid lasers; III-V on Silicon; Telecommunications; Ngpon2; Transceiver

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APA (6th Edition):

Levaufre, G. (2016). Circuits photoniques intégrés incluant des lasers hybrides III-V sur silicium pour applications en télécommunication très haut débit : Photonic Integrated Circuits including hybrid III-V on Silicon lasers for very high-speed telecommunication applications. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2016SACLS304

Chicago Manual of Style (16th Edition):

Levaufre, Guillaume. “Circuits photoniques intégrés incluant des lasers hybrides III-V sur silicium pour applications en télécommunication très haut débit : Photonic Integrated Circuits including hybrid III-V on Silicon lasers for very high-speed telecommunication applications.” 2016. Doctoral Dissertation, Paris Saclay. Accessed September 19, 2019. http://www.theses.fr/2016SACLS304.

MLA Handbook (7th Edition):

Levaufre, Guillaume. “Circuits photoniques intégrés incluant des lasers hybrides III-V sur silicium pour applications en télécommunication très haut débit : Photonic Integrated Circuits including hybrid III-V on Silicon lasers for very high-speed telecommunication applications.” 2016. Web. 19 Sep 2019.

Vancouver:

Levaufre G. Circuits photoniques intégrés incluant des lasers hybrides III-V sur silicium pour applications en télécommunication très haut débit : Photonic Integrated Circuits including hybrid III-V on Silicon lasers for very high-speed telecommunication applications. [Internet] [Doctoral dissertation]. Paris Saclay; 2016. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2016SACLS304.

Council of Science Editors:

Levaufre G. Circuits photoniques intégrés incluant des lasers hybrides III-V sur silicium pour applications en télécommunication très haut débit : Photonic Integrated Circuits including hybrid III-V on Silicon lasers for very high-speed telecommunication applications. [Doctoral Dissertation]. Paris Saclay; 2016. Available from: http://www.theses.fr/2016SACLS304

6. Veinberg vidal, Elias. Fabrication, caractérisation et simulation de cellules solaires multi-junction III-V sur silicium : Fabrication, characterization and simulation of III-V on Si multi-junction solar cells.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Grenoble Alpes

 Des rendements record à plus de 26% ont récemment été démontrés avec des cellules solaires en Si, approchant la limite théorique de 30% pour une… (more)

Subjects/Keywords: III-V sur silicium; Cellules solaires; Caractérisation; Collage; Multi-Junction; Énergie photovoltaïque; III-V on silicon; Solar cells; Characterization; Bonding; Multi-Junction; Photovoltaics; 530; 620

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APA (6th Edition):

Veinberg vidal, E. (2018). Fabrication, caractérisation et simulation de cellules solaires multi-junction III-V sur silicium : Fabrication, characterization and simulation of III-V on Si multi-junction solar cells. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAT091

Chicago Manual of Style (16th Edition):

Veinberg vidal, Elias. “Fabrication, caractérisation et simulation de cellules solaires multi-junction III-V sur silicium : Fabrication, characterization and simulation of III-V on Si multi-junction solar cells.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed September 19, 2019. http://www.theses.fr/2018GREAT091.

MLA Handbook (7th Edition):

Veinberg vidal, Elias. “Fabrication, caractérisation et simulation de cellules solaires multi-junction III-V sur silicium : Fabrication, characterization and simulation of III-V on Si multi-junction solar cells.” 2018. Web. 19 Sep 2019.

Vancouver:

Veinberg vidal E. Fabrication, caractérisation et simulation de cellules solaires multi-junction III-V sur silicium : Fabrication, characterization and simulation of III-V on Si multi-junction solar cells. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2018GREAT091.

Council of Science Editors:

Veinberg vidal E. Fabrication, caractérisation et simulation de cellules solaires multi-junction III-V sur silicium : Fabrication, characterization and simulation of III-V on Si multi-junction solar cells. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAT091


Université Paris-Sud – Paris XI

7. Tsvirkun, Viktor. Optomechanics in hybrid fully-integrated two-dimensional photonic crystal resonators : Optomécanique dans les résonateurs intégrés et hybrides à cristal photonique bi-dimensionel.

Degree: Docteur es, Physique, 2015, Université Paris-Sud – Paris XI

Les systèmes optomécaniques, dans lesquels les vibrations d'un résonateur mécanique sont couplées à un rayonnement électromagnétique, ont permis l'examen de multiples nouveaux effets physiques. Afin… (more)

Subjects/Keywords: Optomécanique; Cristaux photoniques; Intégration hétérogène; Ajustement du couplage optomécanique; Semi-conducteurs III-V; Silicium-Sur-Isolant; Optomechanics; Photonic crystals; Heterogeneous integration; Tailored optomechanical coupling; III-V semiconductors; Silicon-On-Insulator

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APA (6th Edition):

Tsvirkun, V. (2015). Optomechanics in hybrid fully-integrated two-dimensional photonic crystal resonators : Optomécanique dans les résonateurs intégrés et hybrides à cristal photonique bi-dimensionel. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2015PA112176

Chicago Manual of Style (16th Edition):

Tsvirkun, Viktor. “Optomechanics in hybrid fully-integrated two-dimensional photonic crystal resonators : Optomécanique dans les résonateurs intégrés et hybrides à cristal photonique bi-dimensionel.” 2015. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed September 19, 2019. http://www.theses.fr/2015PA112176.

MLA Handbook (7th Edition):

Tsvirkun, Viktor. “Optomechanics in hybrid fully-integrated two-dimensional photonic crystal resonators : Optomécanique dans les résonateurs intégrés et hybrides à cristal photonique bi-dimensionel.” 2015. Web. 19 Sep 2019.

Vancouver:

Tsvirkun V. Optomechanics in hybrid fully-integrated two-dimensional photonic crystal resonators : Optomécanique dans les résonateurs intégrés et hybrides à cristal photonique bi-dimensionel. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2015. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2015PA112176.

Council of Science Editors:

Tsvirkun V. Optomechanics in hybrid fully-integrated two-dimensional photonic crystal resonators : Optomécanique dans les résonateurs intégrés et hybrides à cristal photonique bi-dimensionel. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2015. Available from: http://www.theses.fr/2015PA112176

8. Tremblay, Ronan. Propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium : Structural, optical, electrical properties of GaP-based nanostructures and alloys for integrated photonics on silicon.

Degree: Docteur es, Photonique, 2018, Rennes, INSA

Ce travail de thèse porte sur les propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur… (more)

Subjects/Keywords: Photonique sur silicium; Semi-Conducteurs III-V; Mbe; Phosphure de gallium; Boîtes quantiques InGaAs/GaP; Photonics on silicon; III-V semiconductors; Mbe; Gallium phosphide; InGaAs/GaP quantum dots; 621.36

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APA (6th Edition):

Tremblay, R. (2018). Propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium : Structural, optical, electrical properties of GaP-based nanostructures and alloys for integrated photonics on silicon. (Doctoral Dissertation). Rennes, INSA. Retrieved from http://www.theses.fr/2018ISAR0026

Chicago Manual of Style (16th Edition):

Tremblay, Ronan. “Propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium : Structural, optical, electrical properties of GaP-based nanostructures and alloys for integrated photonics on silicon.” 2018. Doctoral Dissertation, Rennes, INSA. Accessed September 19, 2019. http://www.theses.fr/2018ISAR0026.

MLA Handbook (7th Edition):

Tremblay, Ronan. “Propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium : Structural, optical, electrical properties of GaP-based nanostructures and alloys for integrated photonics on silicon.” 2018. Web. 19 Sep 2019.

Vancouver:

Tremblay R. Propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium : Structural, optical, electrical properties of GaP-based nanostructures and alloys for integrated photonics on silicon. [Internet] [Doctoral dissertation]. Rennes, INSA; 2018. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2018ISAR0026.

Council of Science Editors:

Tremblay R. Propriétés structurales, optiques et électriques de nanostructures et alliages à base de GaP pour la photonique intégrée sur silicium : Structural, optical, electrical properties of GaP-based nanostructures and alloys for integrated photonics on silicon. [Doctoral Dissertation]. Rennes, INSA; 2018. Available from: http://www.theses.fr/2018ISAR0026


Texas State University – San Marcos

9. Cunningham, Thiess H. Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon.

Degree: MS, Physics, 2012, Texas State University – San Marcos

 The continued scaling of Si CMOS devices as had been practiced by the electronics industry has reached the point where, alternative solutions to the conventional… (more)

Subjects/Keywords: QMSA; III-V; Heterostructures; III-V on Silicon; SEMATECH; Cunningham; Droopad; Metal oxide semiconductors, Complementary; Molecular beam epitaxy; Heterostructures; Metal oxide semiconductor field-effect transistors; Semiconductors

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APA (6th Edition):

Cunningham, T. H. (2012). Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon. (Masters Thesis). Texas State University – San Marcos. Retrieved from https://digital.library.txstate.edu/handle/10877/4390

Chicago Manual of Style (16th Edition):

Cunningham, Thiess H. “Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon.” 2012. Masters Thesis, Texas State University – San Marcos. Accessed September 19, 2019. https://digital.library.txstate.edu/handle/10877/4390.

MLA Handbook (7th Edition):

Cunningham, Thiess H. “Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon.” 2012. Web. 19 Sep 2019.

Vancouver:

Cunningham TH. Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon. [Internet] [Masters thesis]. Texas State University – San Marcos; 2012. [cited 2019 Sep 19]. Available from: https://digital.library.txstate.edu/handle/10877/4390.

Council of Science Editors:

Cunningham TH. Quantitative Mobility Spectrum Analysis of III-V Heterostructures On Silicon. [Masters Thesis]. Texas State University – San Marcos; 2012. Available from: https://digital.library.txstate.edu/handle/10877/4390


ETH Zürich

10. Seifried, Marc. III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources.

Degree: 2018, ETH Zürich

 Data-rich applications, such as cloud computing, video streaming and social media fuel a growing demand for high-performance data centers. Their performance is based on interconnected… (more)

Subjects/Keywords: Silicon Photonics; III-V; Semiconductor Lasers; CMOS

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APA (6th Edition):

Seifried, M. (2018). III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources. (Doctoral Dissertation). ETH Zürich. Retrieved from http://hdl.handle.net/20.500.11850/327330

Chicago Manual of Style (16th Edition):

Seifried, Marc. “III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources.” 2018. Doctoral Dissertation, ETH Zürich. Accessed September 19, 2019. http://hdl.handle.net/20.500.11850/327330.

MLA Handbook (7th Edition):

Seifried, Marc. “III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources.” 2018. Web. 19 Sep 2019.

Vancouver:

Seifried M. III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources. [Internet] [Doctoral dissertation]. ETH Zürich; 2018. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/20.500.11850/327330.

Council of Science Editors:

Seifried M. III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources. [Doctoral Dissertation]. ETH Zürich; 2018. Available from: http://hdl.handle.net/20.500.11850/327330


University of Arizona

11. Sears, Jasmine Soria. Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures .

Degree: 2017, University of Arizona

 The fields of telecommunications and optoelectronics are under constant pressure to shrink devices and reduce power consumption. Micro-scale photonic and plasmonic structures can trap light… (more)

Subjects/Keywords: III-V; MBE; Microstructure; Photonic; Plasmonic; Silicon

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APA (6th Edition):

Sears, J. S. (2017). Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/625672

Chicago Manual of Style (16th Edition):

Sears, Jasmine Soria. “Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures .” 2017. Doctoral Dissertation, University of Arizona. Accessed September 19, 2019. http://hdl.handle.net/10150/625672.

MLA Handbook (7th Edition):

Sears, Jasmine Soria. “Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures .” 2017. Web. 19 Sep 2019.

Vancouver:

Sears JS. Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures . [Internet] [Doctoral dissertation]. University of Arizona; 2017. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/10150/625672.

Council of Science Editors:

Sears JS. Characterization of Novel Plasmonic, Photonic, and Semiconductor Microstructures . [Doctoral Dissertation]. University of Arizona; 2017. Available from: http://hdl.handle.net/10150/625672


University of Illinois – Urbana-Champaign

12. Carlson, John Anthony. Scalable designs and methods for heterogeneous electronic-photonic integrated circuitry.

Degree: MS, Electrical & Computer Engr, 2017, University of Illinois – Urbana-Champaign

 A set of semiconductor designs shown to be capable of facilitating scalable and reconfigurable layouts for electronic-photonic integrated circuitry is presented. Three emphases are established… (more)

Subjects/Keywords: Photonic integration; III-V on silicon; Gallium nitride; Complementary metal–oxide–semiconductor (CMOS) compatibility; Scalable processes

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APA (6th Edition):

Carlson, J. A. (2017). Scalable designs and methods for heterogeneous electronic-photonic integrated circuitry. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/97634

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Carlson, John Anthony. “Scalable designs and methods for heterogeneous electronic-photonic integrated circuitry.” 2017. Thesis, University of Illinois – Urbana-Champaign. Accessed September 19, 2019. http://hdl.handle.net/2142/97634.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Carlson, John Anthony. “Scalable designs and methods for heterogeneous electronic-photonic integrated circuitry.” 2017. Web. 19 Sep 2019.

Vancouver:

Carlson JA. Scalable designs and methods for heterogeneous electronic-photonic integrated circuitry. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2017. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/2142/97634.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Carlson JA. Scalable designs and methods for heterogeneous electronic-photonic integrated circuitry. [Thesis]. University of Illinois – Urbana-Champaign; 2017. Available from: http://hdl.handle.net/2142/97634

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. Gallet, Antonin. Hybrid III-V on silicon lasers for optical communications : Sources lasers hybrides III-V sur silicium pour les communications optiques.

Degree: Docteur es, Electronique et Optoélectronique, Nano- et Microtechnologies, 2019, Paris Saclay

L’intégration photonique permet de réduire la taille et la consommation d’énergie des systèmes de communication par fibre optique par rapport aux systèmes assemblés à partir… (more)

Subjects/Keywords: Photonique sur silicium; Lasers hybrides; Circuit intégré photonique, PIC; III-V sur silicium; Silicium sur isolant, SOI; Silicon photonics; Hybrid lasers; Photonic integrated circuit, PIC; III-V on Silicon; Silicon on insulator, SOI

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gallet, A. (2019). Hybrid III-V on silicon lasers for optical communications : Sources lasers hybrides III-V sur silicium pour les communications optiques. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2019SACLT019

Chicago Manual of Style (16th Edition):

Gallet, Antonin. “Hybrid III-V on silicon lasers for optical communications : Sources lasers hybrides III-V sur silicium pour les communications optiques.” 2019. Doctoral Dissertation, Paris Saclay. Accessed September 19, 2019. http://www.theses.fr/2019SACLT019.

MLA Handbook (7th Edition):

Gallet, Antonin. “Hybrid III-V on silicon lasers for optical communications : Sources lasers hybrides III-V sur silicium pour les communications optiques.” 2019. Web. 19 Sep 2019.

Vancouver:

Gallet A. Hybrid III-V on silicon lasers for optical communications : Sources lasers hybrides III-V sur silicium pour les communications optiques. [Internet] [Doctoral dissertation]. Paris Saclay; 2019. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2019SACLT019.

Council of Science Editors:

Gallet A. Hybrid III-V on silicon lasers for optical communications : Sources lasers hybrides III-V sur silicium pour les communications optiques. [Doctoral Dissertation]. Paris Saclay; 2019. Available from: http://www.theses.fr/2019SACLT019


Université Paris-Sud – Paris XI

14. Lamponi, Marco. Lasers inp sur circuits silicium pour applications en telecommunications : Hybrid III-V on silicon lasers for telecommunication applications.

Degree: Docteur es, Physique, 2012, Université Paris-Sud – Paris XI

La photonique du silicium a connu un développent massif pendant les dix derniers années. Presque toutes les briques technologiques de base ont été réalisées et… (more)

Subjects/Keywords: Semiconducteurs III-V; Optique intégrée; Coupleur adiabatique; Lasers à puits quantiques; Silicium sur isolant; Laser sur silicium; Photonique du silicium; Collage; Intégration hétérogène; III-V semiconductors; Integrated optics; Adiabatic taper; Quantum well lasers; Silicon-on-insulator; Silicon laser; Silicon photonics; Bonding; Heterogeneous integration

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APA (6th Edition):

Lamponi, M. (2012). Lasers inp sur circuits silicium pour applications en telecommunications : Hybrid III-V on silicon lasers for telecommunication applications. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2012PA112039

Chicago Manual of Style (16th Edition):

Lamponi, Marco. “Lasers inp sur circuits silicium pour applications en telecommunications : Hybrid III-V on silicon lasers for telecommunication applications.” 2012. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed September 19, 2019. http://www.theses.fr/2012PA112039.

MLA Handbook (7th Edition):

Lamponi, Marco. “Lasers inp sur circuits silicium pour applications en telecommunications : Hybrid III-V on silicon lasers for telecommunication applications.” 2012. Web. 19 Sep 2019.

Vancouver:

Lamponi M. Lasers inp sur circuits silicium pour applications en telecommunications : Hybrid III-V on silicon lasers for telecommunication applications. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2012. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2012PA112039.

Council of Science Editors:

Lamponi M. Lasers inp sur circuits silicium pour applications en telecommunications : Hybrid III-V on silicon lasers for telecommunication applications. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2012. Available from: http://www.theses.fr/2012PA112039

15. Liles, Alexandros Athanasios. Hybrid photonic crystal cavity based lasers .

Degree: 2017, University of St. Andrews

 In recent years, Silicon Photonics has emerged as a promising technology for cost-effective fabrication of photonic components and integrated circuits, the application of which is… (more)

Subjects/Keywords: Photonic crystal cavities; Silicon photonics; Hybrid III-V/silicon lasers

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APA (6th Edition):

Liles, A. A. (2017). Hybrid photonic crystal cavity based lasers . (Thesis). University of St. Andrews. Retrieved from http://hdl.handle.net/10023/12081

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liles, Alexandros Athanasios. “Hybrid photonic crystal cavity based lasers .” 2017. Thesis, University of St. Andrews. Accessed September 19, 2019. http://hdl.handle.net/10023/12081.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liles, Alexandros Athanasios. “Hybrid photonic crystal cavity based lasers .” 2017. Web. 19 Sep 2019.

Vancouver:

Liles AA. Hybrid photonic crystal cavity based lasers . [Internet] [Thesis]. University of St. Andrews; 2017. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/10023/12081.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liles AA. Hybrid photonic crystal cavity based lasers . [Thesis]. University of St. Andrews; 2017. Available from: http://hdl.handle.net/10023/12081

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

16. Quinci, Thomas. Composant photovoltaïque innovant à base d’hétérojonction GaP/Si : New photovoltaic device based on GaP/Si heterojunctions.

Degree: Docteur es, Sciences des matériaux, 2015, Rennes, INSA

L’objectif de ce travail de thèse a été d’étudier une alternative à la cellule photovoltaïque à hétérojonction classique de silicium amorphe/cristallin avec un matériau (GaP)… (more)

Subjects/Keywords: III/V – Si; GaP; Photovoltaic power generation; Silicon; Heterojunctions; III/V – Si; GaP; 621

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APA (6th Edition):

Quinci, T. (2015). Composant photovoltaïque innovant à base d’hétérojonction GaP/Si : New photovoltaic device based on GaP/Si heterojunctions. (Doctoral Dissertation). Rennes, INSA. Retrieved from http://www.theses.fr/2015ISAR0016

Chicago Manual of Style (16th Edition):

Quinci, Thomas. “Composant photovoltaïque innovant à base d’hétérojonction GaP/Si : New photovoltaic device based on GaP/Si heterojunctions.” 2015. Doctoral Dissertation, Rennes, INSA. Accessed September 19, 2019. http://www.theses.fr/2015ISAR0016.

MLA Handbook (7th Edition):

Quinci, Thomas. “Composant photovoltaïque innovant à base d’hétérojonction GaP/Si : New photovoltaic device based on GaP/Si heterojunctions.” 2015. Web. 19 Sep 2019.

Vancouver:

Quinci T. Composant photovoltaïque innovant à base d’hétérojonction GaP/Si : New photovoltaic device based on GaP/Si heterojunctions. [Internet] [Doctoral dissertation]. Rennes, INSA; 2015. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2015ISAR0016.

Council of Science Editors:

Quinci T. Composant photovoltaïque innovant à base d’hétérojonction GaP/Si : New photovoltaic device based on GaP/Si heterojunctions. [Doctoral Dissertation]. Rennes, INSA; 2015. Available from: http://www.theses.fr/2015ISAR0016

17. Mavel, Amaury. Nanofils de semiconducteurs III-V épitaxiés sur Si(111) pour la photonique sur silicium : III-V semiconductors nanowires grown by VLS-MBE on Si(111) for silicon photonics.

Degree: Docteur es, Matériaux, 2017, Lyon

La microélectronique rencontre des difficultés croissantes avec la miniaturisation des composants. La photonique sur silicium propose de les contourner en choisissant le photon comme vecteur… (more)

Subjects/Keywords: Electronique; Matériaux pour l'électronique; Nanofils; Boîtes quantiques; Seminconducteurs III-V; Electrophotonique; Silicium; Photonique sur Silicium; Electronics; Materials for Electronics; Nanowires; Quantum dots; III-V Semiconductor; Electrophotonics; Silicon; Photonics on Silicon; 621.381 045 072

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APA (6th Edition):

Mavel, A. (2017). Nanofils de semiconducteurs III-V épitaxiés sur Si(111) pour la photonique sur silicium : III-V semiconductors nanowires grown by VLS-MBE on Si(111) for silicon photonics. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSEI015

Chicago Manual of Style (16th Edition):

Mavel, Amaury. “Nanofils de semiconducteurs III-V épitaxiés sur Si(111) pour la photonique sur silicium : III-V semiconductors nanowires grown by VLS-MBE on Si(111) for silicon photonics.” 2017. Doctoral Dissertation, Lyon. Accessed September 19, 2019. http://www.theses.fr/2017LYSEI015.

MLA Handbook (7th Edition):

Mavel, Amaury. “Nanofils de semiconducteurs III-V épitaxiés sur Si(111) pour la photonique sur silicium : III-V semiconductors nanowires grown by VLS-MBE on Si(111) for silicon photonics.” 2017. Web. 19 Sep 2019.

Vancouver:

Mavel A. Nanofils de semiconducteurs III-V épitaxiés sur Si(111) pour la photonique sur silicium : III-V semiconductors nanowires grown by VLS-MBE on Si(111) for silicon photonics. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2017LYSEI015.

Council of Science Editors:

Mavel A. Nanofils de semiconducteurs III-V épitaxiés sur Si(111) pour la photonique sur silicium : III-V semiconductors nanowires grown by VLS-MBE on Si(111) for silicon photonics. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSEI015

18. Dupont, Tiphaine. Réalisation de sources laser III-V sur silicium : L'émulation d'un canal de propagation en rayonnée à l'aide d'un setup multi-sonde.

Degree: Docteur es, Electronique, Electrotechnique et Automatique, 2011, Ecully, Ecole centrale de Lyon

 Le substrat SOI (Silicon-On-Insulator) constitue aujourd’hui le support de choix pour la fabrication de fonctions optiques compactes. Cette plateforme commune avec la micro-électronique favorise l’intégration… (more)

Subjects/Keywords: Source laser III-V; Substrat SOI; Silicium; Circuits photoniques; Circuits CMOS; Laser DFB; III-IV laser stacks; Silicon-On-Insulator (SOI); Silicon waveguide; Photonic circuits; CMOS circuits; Distributed Feedback Laser (DFB)

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APA (6th Edition):

Dupont, T. (2011). Réalisation de sources laser III-V sur silicium : L'émulation d'un canal de propagation en rayonnée à l'aide d'un setup multi-sonde. (Doctoral Dissertation). Ecully, Ecole centrale de Lyon. Retrieved from http://www.theses.fr/2011ECDL0001

Chicago Manual of Style (16th Edition):

Dupont, Tiphaine. “Réalisation de sources laser III-V sur silicium : L'émulation d'un canal de propagation en rayonnée à l'aide d'un setup multi-sonde.” 2011. Doctoral Dissertation, Ecully, Ecole centrale de Lyon. Accessed September 19, 2019. http://www.theses.fr/2011ECDL0001.

MLA Handbook (7th Edition):

Dupont, Tiphaine. “Réalisation de sources laser III-V sur silicium : L'émulation d'un canal de propagation en rayonnée à l'aide d'un setup multi-sonde.” 2011. Web. 19 Sep 2019.

Vancouver:

Dupont T. Réalisation de sources laser III-V sur silicium : L'émulation d'un canal de propagation en rayonnée à l'aide d'un setup multi-sonde. [Internet] [Doctoral dissertation]. Ecully, Ecole centrale de Lyon; 2011. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2011ECDL0001.

Council of Science Editors:

Dupont T. Réalisation de sources laser III-V sur silicium : L'émulation d'un canal de propagation en rayonnée à l'aide d'un setup multi-sonde. [Doctoral Dissertation]. Ecully, Ecole centrale de Lyon; 2011. Available from: http://www.theses.fr/2011ECDL0001


NSYSU

19. Chang, Wei-hau. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide.

Degree: Master, Electrical Engineering, 2013, NSYSU

 Due to the high electron mobility compard with Si, much attention has been focused on III-V compound semiconductors (gallium arsenide (GaAs) and indium phosphide (InP))… (more)

Subjects/Keywords: Characterization; Titanium Oxide; Silicon Oxide; III-V Compound Semiconductor; MOS Structures

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APA (6th Edition):

Chang, W. (2013). Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Wei-hau. “Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide.” 2013. Thesis, NSYSU. Accessed September 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Wei-hau. “Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide.” 2013. Web. 19 Sep 2019.

Vancouver:

Chang W. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Sep 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang W. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


McMaster University

20. Kuyanov, Paul. Nanowire Quantum Dot Photodetectors.

Degree: PhD, 2017, McMaster University

InAs/GaAs quantum dots (QDs) embedded within InP/GaP nanowires (NWs) were grown on Si substrates by Au-assisted and self-assisted vapor-liquid-solid (VLS) growth using molecular beam epitaxy… (more)

Subjects/Keywords: nanowires; photodetector; quantum dot; III-V; silicon; molecular beam epitaxy

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APA (6th Edition):

Kuyanov, P. (2017). Nanowire Quantum Dot Photodetectors. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/22735

Chicago Manual of Style (16th Edition):

Kuyanov, Paul. “Nanowire Quantum Dot Photodetectors.” 2017. Doctoral Dissertation, McMaster University. Accessed September 19, 2019. http://hdl.handle.net/11375/22735.

MLA Handbook (7th Edition):

Kuyanov, Paul. “Nanowire Quantum Dot Photodetectors.” 2017. Web. 19 Sep 2019.

Vancouver:

Kuyanov P. Nanowire Quantum Dot Photodetectors. [Internet] [Doctoral dissertation]. McMaster University; 2017. [cited 2019 Sep 19]. Available from: http://hdl.handle.net/11375/22735.

Council of Science Editors:

Kuyanov P. Nanowire Quantum Dot Photodetectors. [Doctoral Dissertation]. McMaster University; 2017. Available from: http://hdl.handle.net/11375/22735

21. Alcotte, Reynald. Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Grenoble Alpes

Avec l’avènement de l’internet des objets, la diversification des moyens de communication et l’augmentation de la puissance de calcul des processeurs, les besoins en termes… (more)

Subjects/Keywords: Hétéroépitaxie; Semiconducteurs III-V; Silicium; Arséniures; Mocvd; Résistivité de contact; Heteroepitaxy; Semiconductors III-V; Silicon; Arsenides; Mocvd; Contact resistivity; 620

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APA (6th Edition):

Alcotte, R. (2018). Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAT005

Chicago Manual of Style (16th Edition):

Alcotte, Reynald. “Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed September 19, 2019. http://www.theses.fr/2018GREAT005.

MLA Handbook (7th Edition):

Alcotte, Reynald. “Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon.” 2018. Web. 19 Sep 2019.

Vancouver:

Alcotte R. Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2018GREAT005.

Council of Science Editors:

Alcotte R. Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAT005

22. Fouquat, Louise. Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires : Photoemission study of metal / oxide and metal / semiconductor interfaces grown by molecular beam epitaxy.

Degree: Docteur es, Physique des matériaux, 2018, Lyon

La recherche d’une miniaturisation toujours plus poussée des dispositifs en micro- et opto- électronique a participé au développement des nanotechnologies. A l’échelle nanométrique, la densité… (more)

Subjects/Keywords: Photoémission; Hétéroépitaxie; Interfaces; Nanofils; Silicium; Phase Zintl; Semiconducteur III-V; Photoemission; Heteroepitaxy; Interfaces; Nanowires; MBE; Silicon; III-V semiconductors; Zintl phase

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APA (6th Edition):

Fouquat, L. (2018). Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires : Photoemission study of metal / oxide and metal / semiconductor interfaces grown by molecular beam epitaxy. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2018LYSEC045

Chicago Manual of Style (16th Edition):

Fouquat, Louise. “Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires : Photoemission study of metal / oxide and metal / semiconductor interfaces grown by molecular beam epitaxy.” 2018. Doctoral Dissertation, Lyon. Accessed September 19, 2019. http://www.theses.fr/2018LYSEC045.

MLA Handbook (7th Edition):

Fouquat, Louise. “Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires : Photoemission study of metal / oxide and metal / semiconductor interfaces grown by molecular beam epitaxy.” 2018. Web. 19 Sep 2019.

Vancouver:

Fouquat L. Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires : Photoemission study of metal / oxide and metal / semiconductor interfaces grown by molecular beam epitaxy. [Internet] [Doctoral dissertation]. Lyon; 2018. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2018LYSEC045.

Council of Science Editors:

Fouquat L. Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires : Photoemission study of metal / oxide and metal / semiconductor interfaces grown by molecular beam epitaxy. [Doctoral Dissertation]. Lyon; 2018. Available from: http://www.theses.fr/2018LYSEC045


University of New South Wales

23. Wang, Li. High efficiency three terminal GaAsP/SiGe dual junction solar Cell on silicon substrate.

Degree: Photovoltaics & Renewable Energy Engineering, 2017, University of New South Wales

III-V solar cells are well known for the world record efficiencies in photovoltaic field. Integrating III-V solar cells on silicon (Si) substrates can lead to… (more)

Subjects/Keywords: SiGe; Tandem solar cell; GaAsP; III-V on Si; High efficiency

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APA (6th Edition):

Wang, L. (2017). High efficiency three terminal GaAsP/SiGe dual junction solar Cell on silicon substrate. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/57310 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43274/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Wang, Li. “High efficiency three terminal GaAsP/SiGe dual junction solar Cell on silicon substrate.” 2017. Doctoral Dissertation, University of New South Wales. Accessed September 19, 2019. http://handle.unsw.edu.au/1959.4/57310 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43274/SOURCE02?view=true.

MLA Handbook (7th Edition):

Wang, Li. “High efficiency three terminal GaAsP/SiGe dual junction solar Cell on silicon substrate.” 2017. Web. 19 Sep 2019.

Vancouver:

Wang L. High efficiency three terminal GaAsP/SiGe dual junction solar Cell on silicon substrate. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2019 Sep 19]. Available from: http://handle.unsw.edu.au/1959.4/57310 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43274/SOURCE02?view=true.

Council of Science Editors:

Wang L. High efficiency three terminal GaAsP/SiGe dual junction solar Cell on silicon substrate. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/57310 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43274/SOURCE02?view=true

24. Pirro, Luca. Caractérisation et modélisation électrique de substrats SOI avancés : Electrical characterization and modeling of advanced SOI substrates.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes

Les substrats Silicium-sur-Isolant (SOI) représentent la meilleure solution pour obtenir des dispositifs microélectroniques ayant de hautes performances. Des méthodes de caractérisation électrique sont nécessaires pour… (more)

Subjects/Keywords: Silicium-sur-isolant (SOI); Pseudo-MOSFET (Ψ-MOSFET); Statique ID-VG; Split-CV; Capacité quasi-statique (QSCV); Bruit basse fréquence (LFN); Semiconducteurs III-V; Silicon-on-insulator (SOI); Pseudo-MOSFET (Ψ-MOSFET); Static ID-VG; Split-CV; Quasi-static capacitance (QSCV); Low-frequency noise (LFN); III-V materials; 620

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APA (6th Edition):

Pirro, L. (2015). Caractérisation et modélisation électrique de substrats SOI avancés : Electrical characterization and modeling of advanced SOI substrates. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAT096

Chicago Manual of Style (16th Edition):

Pirro, Luca. “Caractérisation et modélisation électrique de substrats SOI avancés : Electrical characterization and modeling of advanced SOI substrates.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed September 19, 2019. http://www.theses.fr/2015GREAT096.

MLA Handbook (7th Edition):

Pirro, Luca. “Caractérisation et modélisation électrique de substrats SOI avancés : Electrical characterization and modeling of advanced SOI substrates.” 2015. Web. 19 Sep 2019.

Vancouver:

Pirro L. Caractérisation et modélisation électrique de substrats SOI avancés : Electrical characterization and modeling of advanced SOI substrates. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2015GREAT096.

Council of Science Editors:

Pirro L. Caractérisation et modélisation électrique de substrats SOI avancés : Electrical characterization and modeling of advanced SOI substrates. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAT096


Arizona State University

25. Dahal, Som Nath. Advanced Nanostructured Concepts in Solar Cells using III-V and Silicon-Based Materials.

Degree: PhD, Electrical Engineering, 2011, Arizona State University

 As existing solar cell technologies come closer to their theoretical efficiency, new concepts that overcome the Shockley-Queisser limit and exceed 50% efficiency need to be… (more)

Subjects/Keywords: Electrical Engineering; III-V Silicon; Intermediate band; Nanostructures; Photovoltaics; Quantum dots; Strain

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APA (6th Edition):

Dahal, S. N. (2011). Advanced Nanostructured Concepts in Solar Cells using III-V and Silicon-Based Materials. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/9450

Chicago Manual of Style (16th Edition):

Dahal, Som Nath. “Advanced Nanostructured Concepts in Solar Cells using III-V and Silicon-Based Materials.” 2011. Doctoral Dissertation, Arizona State University. Accessed September 19, 2019. http://repository.asu.edu/items/9450.

MLA Handbook (7th Edition):

Dahal, Som Nath. “Advanced Nanostructured Concepts in Solar Cells using III-V and Silicon-Based Materials.” 2011. Web. 19 Sep 2019.

Vancouver:

Dahal SN. Advanced Nanostructured Concepts in Solar Cells using III-V and Silicon-Based Materials. [Internet] [Doctoral dissertation]. Arizona State University; 2011. [cited 2019 Sep 19]. Available from: http://repository.asu.edu/items/9450.

Council of Science Editors:

Dahal SN. Advanced Nanostructured Concepts in Solar Cells using III-V and Silicon-Based Materials. [Doctoral Dissertation]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/9450

26. Billaud, Mathilde. Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité : III-V semiconductor integration on Silicon substrate for high-mobility n-MOSFET transistors.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2017, Grenoble Alpes

La substitution du canal de silicium par un semi-conducteur III-V est une des voies envisagées pour accroitre la mobilité des électrons dans les transistors n-MOSFET… (more)

Subjects/Keywords: Semi-Conducteurs III-V; N-Mosfet; Substrat silicium; Capacité MOS; Densité d’états d’interface; InGaAs; III-V semiconductors; N-Mosfet; Silicon substrate; MOS capacitor; Interface states density; InGaAs; 620

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APA (6th Edition):

Billaud, M. (2017). Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité : III-V semiconductor integration on Silicon substrate for high-mobility n-MOSFET transistors. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2017GREAT010

Chicago Manual of Style (16th Edition):

Billaud, Mathilde. “Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité : III-V semiconductor integration on Silicon substrate for high-mobility n-MOSFET transistors.” 2017. Doctoral Dissertation, Grenoble Alpes. Accessed September 19, 2019. http://www.theses.fr/2017GREAT010.

MLA Handbook (7th Edition):

Billaud, Mathilde. “Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité : III-V semiconductor integration on Silicon substrate for high-mobility n-MOSFET transistors.” 2017. Web. 19 Sep 2019.

Vancouver:

Billaud M. Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité : III-V semiconductor integration on Silicon substrate for high-mobility n-MOSFET transistors. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2017. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2017GREAT010.

Council of Science Editors:

Billaud M. Intégration de semi-conducteurs III-V sur substrat Silicium pour les transistors n-MOSFET à haute mobilité : III-V semiconductor integration on Silicon substrate for high-mobility n-MOSFET transistors. [Doctoral Dissertation]. Grenoble Alpes; 2017. Available from: http://www.theses.fr/2017GREAT010

27. Durel, Jocelyn. Intégration d’un laser hybride DBR III-V/Si en face arrière d’une puce photonique : Integration of an hybrid III-V/Si DBR laser on the Back-Side of a photonic die.

Degree: Docteur es, Optique et radiofrequences, 2017, Grenoble Alpes

 Ces dernières années, la photonique sur silicium est apparue comme une solution prometteuse pour la fabrication en grande série d'émetteurs-récepteurs optiques répondant aux besoins des… (more)

Subjects/Keywords: Intégration; Photonique sur silicium; Laser hybride III-V/Si; Réseau de couplage surfacique; Integration; Silicon photonic; Hybride III-V/Si laser; Grating coupler; 620

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APA (6th Edition):

Durel, J. (2017). Intégration d’un laser hybride DBR III-V/Si en face arrière d’une puce photonique : Integration of an hybrid III-V/Si DBR laser on the Back-Side of a photonic die. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2017GREAT026

Chicago Manual of Style (16th Edition):

Durel, Jocelyn. “Intégration d’un laser hybride DBR III-V/Si en face arrière d’une puce photonique : Integration of an hybrid III-V/Si DBR laser on the Back-Side of a photonic die.” 2017. Doctoral Dissertation, Grenoble Alpes. Accessed September 19, 2019. http://www.theses.fr/2017GREAT026.

MLA Handbook (7th Edition):

Durel, Jocelyn. “Intégration d’un laser hybride DBR III-V/Si en face arrière d’une puce photonique : Integration of an hybrid III-V/Si DBR laser on the Back-Side of a photonic die.” 2017. Web. 19 Sep 2019.

Vancouver:

Durel J. Intégration d’un laser hybride DBR III-V/Si en face arrière d’une puce photonique : Integration of an hybrid III-V/Si DBR laser on the Back-Side of a photonic die. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2017. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2017GREAT026.

Council of Science Editors:

Durel J. Intégration d’un laser hybride DBR III-V/Si en face arrière d’une puce photonique : Integration of an hybrid III-V/Si DBR laser on the Back-Side of a photonic die. [Doctoral Dissertation]. Grenoble Alpes; 2017. Available from: http://www.theses.fr/2017GREAT026

28. Lucci, Ida. Surface and interface contributions to III-V/Si hetero-epitaxial growth : Theory and Experiments : Contributions des surfaces et interfaces à la croissance hétéroépitaxiale III-V/Si : Théorie et Expériences.

Degree: Docteur es, Sciences des Matériaux, 2019, Rennes, INSA

L’objectif de cette thèse est d'étudier les propriétés thermodynamiques et clarifier les toutes premières étapes de la croissance hétérogène de GaP sur Si (désaccord de… (more)

Subjects/Keywords: Photonique sur Silicium; Croissance 3D; III-V/Si; GaP/Si; Thermodynamique; DFT; Silicon photonics; 3D-growth; III-V/Si; GaP/Si; Thermodynamics; DFT; 530.6

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APA (6th Edition):

Lucci, I. (2019). Surface and interface contributions to III-V/Si hetero-epitaxial growth : Theory and Experiments : Contributions des surfaces et interfaces à la croissance hétéroépitaxiale III-V/Si : Théorie et Expériences. (Doctoral Dissertation). Rennes, INSA. Retrieved from http://www.theses.fr/2019ISAR0001

Chicago Manual of Style (16th Edition):

Lucci, Ida. “Surface and interface contributions to III-V/Si hetero-epitaxial growth : Theory and Experiments : Contributions des surfaces et interfaces à la croissance hétéroépitaxiale III-V/Si : Théorie et Expériences.” 2019. Doctoral Dissertation, Rennes, INSA. Accessed September 19, 2019. http://www.theses.fr/2019ISAR0001.

MLA Handbook (7th Edition):

Lucci, Ida. “Surface and interface contributions to III-V/Si hetero-epitaxial growth : Theory and Experiments : Contributions des surfaces et interfaces à la croissance hétéroépitaxiale III-V/Si : Théorie et Expériences.” 2019. Web. 19 Sep 2019.

Vancouver:

Lucci I. Surface and interface contributions to III-V/Si hetero-epitaxial growth : Theory and Experiments : Contributions des surfaces et interfaces à la croissance hétéroépitaxiale III-V/Si : Théorie et Expériences. [Internet] [Doctoral dissertation]. Rennes, INSA; 2019. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2019ISAR0001.

Council of Science Editors:

Lucci I. Surface and interface contributions to III-V/Si hetero-epitaxial growth : Theory and Experiments : Contributions des surfaces et interfaces à la croissance hétéroépitaxiale III-V/Si : Théorie et Expériences. [Doctoral Dissertation]. Rennes, INSA; 2019. Available from: http://www.theses.fr/2019ISAR0001

29. Bahri, Mounib. Caractérisation structurale des hétérostructures à base de GaSb et de GaP épitaxiées sur silicium (001) : Structural caracterization of GaSb and GaP based heterostructures grown on Si (001).

Degree: Docteur es, Physique, 2016, Paris Saclay

 L'intégration monolithique des semi-conducteurs III-V sur silicium est une voix prometteuse pour la fabrication de composants électroniques et photoniques. Cependant, cette croissance s'accompagne de la… (more)

Subjects/Keywords: Microscopie électronique en transmission; Diffraction des rayons X; Défauts cristallins; Silicium; Semi-Conducteurs III-V; Transmission Electron Microscopy; X ray diffraction; Crystalline defects; Silicon; III-V semiconductors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bahri, M. (2016). Caractérisation structurale des hétérostructures à base de GaSb et de GaP épitaxiées sur silicium (001) : Structural caracterization of GaSb and GaP based heterostructures grown on Si (001). (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2016SACLS045

Chicago Manual of Style (16th Edition):

Bahri, Mounib. “Caractérisation structurale des hétérostructures à base de GaSb et de GaP épitaxiées sur silicium (001) : Structural caracterization of GaSb and GaP based heterostructures grown on Si (001).” 2016. Doctoral Dissertation, Paris Saclay. Accessed September 19, 2019. http://www.theses.fr/2016SACLS045.

MLA Handbook (7th Edition):

Bahri, Mounib. “Caractérisation structurale des hétérostructures à base de GaSb et de GaP épitaxiées sur silicium (001) : Structural caracterization of GaSb and GaP based heterostructures grown on Si (001).” 2016. Web. 19 Sep 2019.

Vancouver:

Bahri M. Caractérisation structurale des hétérostructures à base de GaSb et de GaP épitaxiées sur silicium (001) : Structural caracterization of GaSb and GaP based heterostructures grown on Si (001). [Internet] [Doctoral dissertation]. Paris Saclay; 2016. [cited 2019 Sep 19]. Available from: http://www.theses.fr/2016SACLS045.

Council of Science Editors:

Bahri M. Caractérisation structurale des hétérostructures à base de GaSb et de GaP épitaxiées sur silicium (001) : Structural caracterization of GaSb and GaP based heterostructures grown on Si (001). [Doctoral Dissertation]. Paris Saclay; 2016. Available from: http://www.theses.fr/2016SACLS045


University of Florida

30. Aldridge, Henry L. Continuum Modelling of Silicon Diffusion in Indium Gallium Arsenide.

Degree: PhD, Materials Science and Engineering, 2016, University of Florida

 A possible method to overcome the physical limitations experienced by continued transistor scaling and continue improvements in performance and power consumption is integration of III-V(more)

Subjects/Keywords: Atoms; Conceptual lattices; Diffusion coefficient; Doping; Dosage; Furnaces; Ions; Point defects; Semiconductors; Silicon; annealing  – diffusion  – iii-v  – processing  – semiconductor  – tcad

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Aldridge, H. L. (2016). Continuum Modelling of Silicon Diffusion in Indium Gallium Arsenide. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0050393

Chicago Manual of Style (16th Edition):

Aldridge, Henry L. “Continuum Modelling of Silicon Diffusion in Indium Gallium Arsenide.” 2016. Doctoral Dissertation, University of Florida. Accessed September 19, 2019. http://ufdc.ufl.edu/UFE0050393.

MLA Handbook (7th Edition):

Aldridge, Henry L. “Continuum Modelling of Silicon Diffusion in Indium Gallium Arsenide.” 2016. Web. 19 Sep 2019.

Vancouver:

Aldridge HL. Continuum Modelling of Silicon Diffusion in Indium Gallium Arsenide. [Internet] [Doctoral dissertation]. University of Florida; 2016. [cited 2019 Sep 19]. Available from: http://ufdc.ufl.edu/UFE0050393.

Council of Science Editors:

Aldridge HL. Continuum Modelling of Silicon Diffusion in Indium Gallium Arsenide. [Doctoral Dissertation]. University of Florida; 2016. Available from: http://ufdc.ufl.edu/UFE0050393

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