subject:(III V Semiconductor Material)

Rochester Institute of Technology

1. Nelson, George Thomas, IV. Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes.

Degree: PhD, Microsystems Engineering, 2019, Rochester Institute of Technology

URL: https://scholarworks.rit.edu/theses/10100

► Photodiodes made of III-V materials are ubiquitous with applications for telecommunications, photonics, consumer electronics, and spectroscopy. The III-V solar cell, specifically, is a large-area… (more)

▼ Photodiodes made of III-V materials are ubiquitous with applications for telecommunications, photonics, consumer electronics, and spectroscopy. The III-V solar cell, specifically, is a large-area photodiode that is used by the satellite industry for power conversion due to its unrivaled efficiency and wide range of available materials. As a device driven by its minority carrier diffusion length (MCDL), the performance of a photodiode is sensitive to crystallographic defects that create states in the forbidden energy gap. Defects commonly arise during growth of the crystal and during device fabrication, and they accumulate slowly over time when deployed into the damaging environment of space. Defect-assisted carrier recombination leads to lower MCDL, higher dark current, reduced sensitivity and signal-to-noise ratio, and, in the case of solar cells, reduced power conversion efficiency. Consequently, the development of photodiode technology requires techniques for detection, characterization, and mitigation of defects and the inter-bandgap states they create. In this work, III-V material defects are addressed across a variety of materials and devices. The first half of the work makes use of deep-level transient spectroscopy (DLTS) to deduce the energy level, cross-section, and density of traps the InAlAs, InAlAsSb, and InGaAs lattice-matched to InP. An in situ DLTS system that can monitor defects immediately after irradiation was developed and applied to InGaAs photodiodes irradiated by protons. Evidence of trap annealing was found to occur as low as 150 K. The second half begins with development of GaSb solar cells grown by molecular beam epitaxy on GaAs substrate intended for use in lower-cost monolithic multi-junction cells. Defect analysis by microscopy, dark lock-in thermography, and dark current measurement, among others, was performed. The best GaSb-on-GaAs cell achieved state-of-the-art 4.5% efficiency under concentrated solar spectrum. Finally, light management in III-V photodiodes was explored as a possible route for defect mitigation. Textures, diffraction gratings, metallic mirrors, and Bragg reflectors were simulated by finite difference time domain for single- and multi-junction GaAs-based cells with the aim of reducing the amount of absorber material required and to simultaneously reduce MCDL requirements by generating carriers closer to the junction. The results were inputted into a device simulator to predict efficiency. A backside reflective pyramidal-textured grating was simulated to allow a GaAs cell to be thinned by a factor of >30 compared to a conventional cell. Advisors/Committee Members: Seth M. Hubbard.

Subjects/Keywords: DLTS; III-V; Photodiode; Semiconductor; Solar cells

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APA (6^th Edition):

Nelson, George Thomas, I. (2019). Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/10100

Chicago Manual of Style (16^th Edition):

Nelson, George Thomas, IV. “Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes.” 2019. Doctoral Dissertation, Rochester Institute of Technology. Accessed March 01, 2021. https://scholarworks.rit.edu/theses/10100.

MLA Handbook (7^th Edition):

Nelson, George Thomas, IV. “Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes.” 2019. Web. 01 Mar 2021.

Vancouver:

Nelson, George Thomas I. Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2019. [cited 2021 Mar 01]. Available from: https://scholarworks.rit.edu/theses/10100.

Council of Science Editors:

Nelson, George Thomas I. Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes. [Doctoral Dissertation]. Rochester Institute of Technology; 2019. Available from: https://scholarworks.rit.edu/theses/10100

University of Oregon

2. Greenaway, Ann. Close-Spaced Vapor Transport for III-V Solar Absorbing Devices.

Degree: PhD, Department of Chemistry and Biochemistry, 2018, University of Oregon

URL: http://hdl.handle.net/1794/23185

► Capture of the energy in sunlight relies mainly on the use of light-absorbing semiconductors, in solar cells and in water-splitting devices. While solar cell efficiency… (more)

Subjects/Keywords: III-V semiconductor; Low-cost; Photoelectrochemistry; Photovoltaics

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APA (6^th Edition):

Greenaway, A. (2018). Close-Spaced Vapor Transport for III-V Solar Absorbing Devices. (Doctoral Dissertation). University of Oregon. Retrieved from http://hdl.handle.net/1794/23185

Chicago Manual of Style (16^th Edition):

Greenaway, Ann. “Close-Spaced Vapor Transport for III-V Solar Absorbing Devices.” 2018. Doctoral Dissertation, University of Oregon. Accessed March 01, 2021. http://hdl.handle.net/1794/23185.

MLA Handbook (7^th Edition):

Greenaway, Ann. “Close-Spaced Vapor Transport for III-V Solar Absorbing Devices.” 2018. Web. 01 Mar 2021.

Vancouver:

Greenaway A. Close-Spaced Vapor Transport for III-V Solar Absorbing Devices. [Internet] [Doctoral dissertation]. University of Oregon; 2018. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/1794/23185.

Council of Science Editors:

Greenaway A. Close-Spaced Vapor Transport for III-V Solar Absorbing Devices. [Doctoral Dissertation]. University of Oregon; 2018. Available from: http://hdl.handle.net/1794/23185

Queens University

3. McLaughlin, Dirk. Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells .

Degree: Mechanical and Materials Engineering, 2011, Queens University

URL: http://hdl.handle.net/1974/6809

► The semiconductor alloy indium gallium nitride (InxGa1-xN) offers substantial potential in the development of high-efficiency multi-junction photovoltaic devices due to its wide range of direct… (more)

Subjects/Keywords: Photovoltaics ; III-V Alloy ; Semiconductor Characterization

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APA (6^th Edition):

McLaughlin, D. (2011). Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells . (Thesis). Queens University. Retrieved from http://hdl.handle.net/1974/6809

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

McLaughlin, Dirk. “Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells .” 2011. Thesis, Queens University. Accessed March 01, 2021. http://hdl.handle.net/1974/6809.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

McLaughlin, Dirk. “Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells .” 2011. Web. 01 Mar 2021.

Vancouver:

McLaughlin D. Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells . [Internet] [Thesis]. Queens University; 2011. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/1974/6809.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

McLaughlin D. Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells . [Thesis]. Queens University; 2011. Available from: http://hdl.handle.net/1974/6809

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Mallet, Nicolas. Développement d'architectures 3D à base de transistors MOS à canal nanofil III-V : Development of 3D architecture for MOS transistors based on III-V nanowires channel.

Degree: Docteur es, MicroNano Systèmes, 2019, Université Toulouse III – Paul Sabatier

URL: http://www.theses.fr/2019TOU30044

►

Ce sujet de thèse s'inscrit dans la course à la miniaturisation des technologies CMOS, où l'apparition d'effets néfastes (canaux courts) sur le comportement électrique des… (more)

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Ce sujet de thèse s'inscrit dans la course à la miniaturisation des technologies CMOS, où l'apparition d'effets néfastes (canaux courts) sur le comportement électrique des dispositifs a poussé l'exploration, ces dernières années, d'architectures non planaires de transistors ainsi que d'autres innovations au niveau matériau. Cette thèse propose une architecture 3D à base de nanofils verticaux III-V pour la réalisation de transistors MOS, présentant ainsi des challenges tant architecturaux qu'au niveau du matériau de canal. La thèse débute par la réalisation de nanofils verticaux sur plateforme Si suivant deux approches différentes. Une première voie descendante a permis, en combinant lithographie électronique et gravure plasma, d'obtenir de manière reproductible des nanofils verticaux de GaAs dont les diamètres atteignent 30 nm. Des nanofils verticaux d'InAs ont également été obtenus par voie ascendante. Une structuration de surface a permis de faire croître ces nanofils par MBE de manière localisée, permettant de contrôler leur positionnement pour la réalisation d'un dispositif. Deux études détaillées ont été effectuées afin de traiter les verrous liés aux matériaux III-V. La première a pour sujet la qualité de l'interface oxyde de grille/semiconducteur. Celle-ci possède naturellement une forte densité d'état d'interface menant au verrouillage du niveau de Fermi. Pour diminuer cet effet, la combinaison d'une préparation de surface et du dépôt de l'Al2O3 par ALD a été mise en place. Les caractérisations structurelles et électriques démontrent une interface atomiquement abrupte associée à une densité de défauts du même ordre de grandeur que l'état de l'art (10 12 eV-1.cm-2). La seconde porte sur l'obtention de contacts Source-Drain faiblement résistifs compatibles avec les technologies CMOS. Ceux-ci ont été réalisés par la formation d'un alliage ternaire avec un métal par diffusion thermique. A l'aide de l'étude cristallographique et des caractérisations électriques, l'alliage ternaire à base de nickel a été retenu pour la réalisation de contacts optimaux. Enfin, l'implémentation de ces solutions sur les nanofils verticaux a été réalisée avec succès. Finalement, un procédé de fabrication respectant les approches technologiques industrielles a été mis en place. La réalisation des nanofils verticaux suivie par l'intégration de l'oxyde de grille et des contacts alliés démontré avec succès. Une technique de planarisation du matériau isolant permettant le positionnement vertical du niveau de grille a également été développée. Afin de terminer le procédé, une méthode de gravure de la grille ainsi que la prise des contacts aux 3 bornes du transistor restent à démontrer.

The purpose of this work is to pursue the miniaturization of MOS transistors since the emergence of harmful effects (short channel effects) over the electrical response of devices has motivated the research about non planar architecture as well as some innovative materials. This PhD introduces a 3D architecture based on III-V vertical nanowires for the…

Advisors/Committee Members: Larrieu, Guilhem (thesis director).

Subjects/Keywords: Semiconducteur; Transistor; MOS; III-V; Nanofil; Semiconductor; Transistor; MOS; III-V; Nanowire

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APA (6^th Edition):

Mallet, N. (2019). Développement d'architectures 3D à base de transistors MOS à canal nanofil III-V : Development of 3D architecture for MOS transistors based on III-V nanowires channel. (Doctoral Dissertation). Université Toulouse III – Paul Sabatier. Retrieved from http://www.theses.fr/2019TOU30044

Chicago Manual of Style (16^th Edition):

Mallet, Nicolas. “Développement d'architectures 3D à base de transistors MOS à canal nanofil III-V : Development of 3D architecture for MOS transistors based on III-V nanowires channel.” 2019. Doctoral Dissertation, Université Toulouse III – Paul Sabatier. Accessed March 01, 2021. http://www.theses.fr/2019TOU30044.

MLA Handbook (7^th Edition):

Mallet, Nicolas. “Développement d'architectures 3D à base de transistors MOS à canal nanofil III-V : Development of 3D architecture for MOS transistors based on III-V nanowires channel.” 2019. Web. 01 Mar 2021.

Vancouver:

Mallet N. Développement d'architectures 3D à base de transistors MOS à canal nanofil III-V : Development of 3D architecture for MOS transistors based on III-V nanowires channel. [Internet] [Doctoral dissertation]. Université Toulouse III – Paul Sabatier; 2019. [cited 2021 Mar 01]. Available from: http://www.theses.fr/2019TOU30044.

Council of Science Editors:

Mallet N. Développement d'architectures 3D à base de transistors MOS à canal nanofil III-V : Development of 3D architecture for MOS transistors based on III-V nanowires channel. [Doctoral Dissertation]. Université Toulouse III – Paul Sabatier; 2019. Available from: http://www.theses.fr/2019TOU30044

Université de Sherbrooke

5. Ridaoui, Mohamed. Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince.

Degree: 2017, Université de Sherbrooke

URL: http://hdl.handle.net/11143/11118

► Abstract : Silicon-based devices dominate the semiconductor industry because of the low cost of this material, its technology availability and maturity. However, silicon has physical… (more)

▼ Abstract : Silicon-based devices dominate the semiconductor industry because of the low cost of this material, its technology availability and maturity. However, silicon has physical limitations, in terms of mobility and saturation velocity of the carriers, which limit its use in the high frequency applications and low supply voltage i.e. power consumption, in CMOS technology. Therefore, III-V materials like InGaAs and InAs are good candidates because of the excellent electron mobility of bulk materials (from 5000 to 40.000 cm2 /V.s) and the high electron saturation velocity. We have fabricated ultra-thin body (UTB) InAs/InGaAs MOSFET with gate length of 150 nm. The frequency response and ON-current of the presented MOSFETs is measured and found to have comparable performances to the existing state of the art MOSFETs as reported by the other research groups. The UTB MOSFETs were fabricated by self-aligned method. Two thin body conduction channels were explored, In0,75Ga0,25As and a composite InAs/In0,53Ga0,47As. A thin upper barrier layer consisting of InP (3nm) is inserted between the channel and the oxide layers to realized a buried channel. Finally, the Al2O3 (4 nm) was deposited by the atomic layer deposition (ALD) technique. It is well known that the source and drain (S/D) contact resistances of InAs MOSFETs influence the devices performances. Therefore, in our ultra-thin body (UTB) InAs MOSFETs design, we have engineered the contacts to achieve good ohmic contact resistances. Indeed, for this UTB architecture the use of ion implantation technique is incompatible with a low thermal budget and cannot allow to obtain low resistive contacts. To overcome this limitation, an adapted technological approach to define ohmic contacts is presented. To that end, we chose low thermal budget (250°C) silicide-like technology based on Nickel metal. Finally, we have studied and analyzed the resistance of the alloy between Nickel and III-V (Rsheet). MOSFET with two different epilayer structures (In0,75Ga0,25As and a composite InAs/In0,53Ga0,47As) were fabricated with a gate length (LG) of 150 nm. There were few difference of electrical performance of these two devices. We obtained a maximum drain current (ION) of 730 mA/mm, and the extrinsic transconductance (GM, MAX) showed a peak value of 500 mS/mm. The devices exhibited a current gain cutoff frequency fT of 100 GHz and maximum oscillation frequency fmax of 60 GHz for drain to source voltage (VDS) of 0.7 V. Advisors/Committee Members: Maher, Hassan (advisor), Bollaert, Sylvain (advisor).

Subjects/Keywords: Matériaux III-V (petit gap); MOSFETs; Ultra-thin body (UTB); Al2O3; Ni/III-V; Hyperfréquence; III-V material; MOSFETS; High frequency

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Ridaoui, M. (2017). Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince. (Doctoral Dissertation). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/11118

Chicago Manual of Style (16^th Edition):

Ridaoui, Mohamed. “Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince.” 2017. Doctoral Dissertation, Université de Sherbrooke. Accessed March 01, 2021. http://hdl.handle.net/11143/11118.

MLA Handbook (7^th Edition):

Ridaoui, Mohamed. “Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince.” 2017. Web. 01 Mar 2021.

Vancouver:

Ridaoui M. Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince. [Internet] [Doctoral dissertation]. Université de Sherbrooke; 2017. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/11143/11118.

Council of Science Editors:

Ridaoui M. Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince. [Doctoral Dissertation]. Université de Sherbrooke; 2017. Available from: http://hdl.handle.net/11143/11118

6. Ye, Hao. Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices.

Degree: PhD, 2016, University of Oklahoma

URL: http://hdl.handle.net/11244/34898

► The interband cascade (IC) family of devices has been extended beyond mid-infrared lasers to include photovoltaic (PV) and photodetector (PD) devices. These devices utilize the… (more)

▼ The interband cascade (IC) family of devices has been extended beyond mid-infrared lasers to include photovoltaic (PV) and photodetector (PD) devices. These devices utilize the transition between conduction and valence bands for photon emission or absorption in the infrared region. The cascade structure recycles electrons to generate or collect multiple photons per electron. Epitaxial growths of the device structures are challenging because they consist of hundreds of quantum wells and require atomic layer precision in thickness control. Molecular beam epitaxy (MBE) was used to grow these structures with InAs, GaSb, AlSb, and their alloys on InAs or GaSb substrates. IC laser structures with InAs plasmon cladding layers were grown on InAs substrates for wavelengths greater than 3 μm. To provide a smooth initial surface for the cascade region, the optimal conditions for growth of homoepitaxial InAs layers were investigated over a wide range of substrate temperatures and As2/In flux ratios at a growth rate of 0.66 monolayer/s (ML/s). Material quality was investigated using differential interference contrast microscopy, scanning electron microscopy, and atomic force microscopy. The geometry of oval hillock defects on the InAs layers suggested that these defects originated at the substrate surface. The InAs-based IC lasers had emission wavelengths out to 11 μm, which is the longest wavelength among interband lasers based on III–V materials. By introducing intermediate superlattice (SL) cladding layers to enhance optical confinement and reduce internal absorption loss, the first continuous wave operation of InAs-based IC lasers at room temperature was demonstrated. The threshold current density of 247 A/cm2 for emission near 4.6 μm is the lowest ever reported among semiconductor mid-infrared lasers at similar wavelengths. ICPV and ICPD devices were developed based on the architecture of IC lasers. They both consist of multiple discrete InAs/GaSb SL absorbers sandwiched between electron and hole barriers. ICPV devices can be used in thermophotovoltaic systems that convert radiant energy from a heat source into electricity. Strain-balanced InAs/GaSb SL structures were achieved by adjusting the group-V overpressure during MBE growth. Two- and three-stage ICPV devices operated at room temperature with substantial open-circuit voltages at a cutoff wavelength of 5.3 μm, the longest ever reported for room-temperature PV devices. The interfaces of InAs/GaSb SLs were studied with the goal of improving the PDs designed for the long-wavelength infrared region. Two ICPD structures with different SL interfaces were grown by MBE, one with a ~1.2 ML-thick InSb layer inserted intentionally only at the GaSb-on-InAs interfaces and another with a ~0.6 ML-thick InSb layer inserted at both InAs-on-GaSb and GaSb-on-InAs interfaces. The material quality of the PD structures was similar according to differential interference contrast microscopy, atomic force microscopy, and x-ray diffraction measurements. The device performances were not… Advisors/Committee Members: Yang, Rui (advisor), Santos, Michael (advisor), Murphy, Sheena (committee member), Ruyle, Jessica (committee member), Shi, Zhisheng (committee member), Johnson, Matthew (committee member).

Subjects/Keywords: Molecular Beam Epitaxy; III-V Semiconductor Material; Laser; Detector

…even longer wavelengths. xviii Chapter 1 Introduction III-V semiconductor materials are… …III-V semiconductor materials usually crystallize in zinc-blende lattice, which consists of… …11 µm, which is the longest wavelength among interband lasers based on III–V semiconductor… …in the AFM images. The substrate temperature (T), As2/In flux ratio (V/III… …follows: (a, d) Structure T2, T= 405˚C, V/III=11:1, RMS = 0.22 nm, and P-V = ~1.3 nm…

11 more images…

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APA (6^th Edition):

Ye, H. (2016). Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices. (Doctoral Dissertation). University of Oklahoma. Retrieved from http://hdl.handle.net/11244/34898

Chicago Manual of Style (16^th Edition):

Ye, Hao. “Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices.” 2016. Doctoral Dissertation, University of Oklahoma. Accessed March 01, 2021. http://hdl.handle.net/11244/34898.

MLA Handbook (7^th Edition):

Ye, Hao. “Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices.” 2016. Web. 01 Mar 2021.

Vancouver:

Ye H. Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices. [Internet] [Doctoral dissertation]. University of Oklahoma; 2016. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/11244/34898.

Council of Science Editors:

Ye H. Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices. [Doctoral Dissertation]. University of Oklahoma; 2016. Available from: http://hdl.handle.net/11244/34898

NSYSU

7. Chang, Wei-hau. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide.

Degree: Master, Electrical Engineering, 2013, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539

► Due to the high electron mobility compard with Si, much attention has been focused on III-V compound semiconductors (gallium arsenide (GaAs) and indium phosphide (InP))… (more)

Subjects/Keywords: Characterization; Titanium Oxide; Silicon Oxide; III-V Compound Semiconductor; MOS Structures

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APA (6^th Edition):

Chang, W. (2013). Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Chang, Wei-hau. “Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide.” 2013. Thesis, NSYSU. Accessed March 01, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Chang, Wei-hau. “Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide.” 2013. Web. 01 Mar 2021.

Vancouver:

Chang W. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide. [Internet] [Thesis]. NSYSU; 2013. [cited 2021 Mar 01]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang W. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Rochester Institute of Technology

8. Asadolahi Baboli, Mohadeseh. Catalyst-free Heteroepitaxy of III-V Semiconductor Nanowires on Silicon, Graphene, and Molybdenum Disulfide.

Degree: PhD, Microsystems Engineering, 2020, Rochester Institute of Technology

URL: https://scholarworks.rit.edu/theses/10528

► The research presented in this dissertation pioneered three novel nano-material systems, including vertically aligned InAlAs nanowires (NWs) on two-dimensional (2-D) graphene, InAs NWs on… (more)

▼ The research presented in this dissertation pioneered three novel nano-material systems, including vertically aligned InAlAs nanowires (NWs) on two-dimensional (2-D) graphene, InAs NWs on 2-D MoS2, and GaAsP NWs on Si using metalorganic chemical vapor deposition (MOCVD). Bottom up integratiton of NW structures enable heteroepitaxy of largely dissimilar III-V compounds on foreign substrates and provide a basis for design of high-performance devices that are otherwise inaccessible using thin- films or planar geometries. During conventional heteroepitaxy of planar geometries, strict constraints are imposed by the need to match lattice parameters, thermal expansion coefficients, and polar coherence between adjacent dissimilar materials. Semiconductor III-V NWs with small substrate footprints can permit relief of lattice mismatch-induced strain in heteroepitaxial systems. Thus, high crystalline quality III-V compound semiconductor NWs can be monolithically integrated with foreign substrates for novel electronic and optoelectronic device designs. This dissertation presents wafer-scale production of vertically oriented InAsyP1-y and InxAl1-xAs NWs on single layer graphene (SLG) and MoS2 substrates, grown via pseudo-van der Waals epitaxy (vdWE). The morphology, areal density, and crystalstructure of InAsyP1-y NWs within the 1 ≤ y ≤ 0.8 range and InxAl1-xAs in the 1 ≤ x ≤ 0.5 range are quantitatively analyzed by mapping a wide growth parameter space as a function of growth temperature, V/III ratio, total precursor flow rate, and molar flow ratio of precursors. Furthermore, through manipulation of growth kinetics, selective-area vdWE of III-V NWs on 2-D MoS2 surfaces is demonstrated, and pattern-free positioning of single NWs on isolated MoS2 micro-plates with one-to-one NW-to-MoS2 placement is highlighted. Here, the highest axial growth rate of 840 nm/min and NW number density of ∼8.3 × 108 cm−2 for vdWE of high aspect ratio (>80) InAs NW arrays on graphitic surfaces is reported. Additionally, selective-area epitaxy (SAE) of GaAsP-GaP core-multi shell NW arrays on patterned Si(111) substrates is reported. The composition of GaAsyP1-y NWs is tuned toward a targeted value of y = 0.73 to achieve the bandgap of 1.75 eV. The effect of growth rate on morphology, total yield, and symmetric yield of GaAsP NWs is explored through modulation of the effective local supply of growth species. Under the optimized SAE growth condition, > 90% yield of hexagonally symmetric GaAsP NWs on Si is realized using a 100 μm × 100 μm field of nano-hole arrays in the center of a 400 μm × 400 μm mesa with border width of 100 μm. Advisors/Committee Members: Parsian K. Mohseni.

Subjects/Keywords: Epitaxy; Graphene; III-V; Molybdenum disulfide; Nanowire; Semiconductor

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APA (6^th Edition):

Asadolahi Baboli, M. (2020). Catalyst-free Heteroepitaxy of III-V Semiconductor Nanowires on Silicon, Graphene, and Molybdenum Disulfide. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/10528

Chicago Manual of Style (16^th Edition):

Asadolahi Baboli, Mohadeseh. “Catalyst-free Heteroepitaxy of III-V Semiconductor Nanowires on Silicon, Graphene, and Molybdenum Disulfide.” 2020. Doctoral Dissertation, Rochester Institute of Technology. Accessed March 01, 2021. https://scholarworks.rit.edu/theses/10528.

MLA Handbook (7^th Edition):

Asadolahi Baboli, Mohadeseh. “Catalyst-free Heteroepitaxy of III-V Semiconductor Nanowires on Silicon, Graphene, and Molybdenum Disulfide.” 2020. Web. 01 Mar 2021.

Vancouver:

Asadolahi Baboli M. Catalyst-free Heteroepitaxy of III-V Semiconductor Nanowires on Silicon, Graphene, and Molybdenum Disulfide. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2020. [cited 2021 Mar 01]. Available from: https://scholarworks.rit.edu/theses/10528.

Council of Science Editors:

Asadolahi Baboli M. Catalyst-free Heteroepitaxy of III-V Semiconductor Nanowires on Silicon, Graphene, and Molybdenum Disulfide. [Doctoral Dissertation]. Rochester Institute of Technology; 2020. Available from: https://scholarworks.rit.edu/theses/10528

Texas A&M University

9. Suh, Jae Woo. Device Design Parameterization of III-V Multi-Gate FETs.

Degree: PhD, Electrical Engineering, 2016, Texas A&M University

URL: http://hdl.handle.net/1969.1/159072

► The use of group III-V semiconductor materials promise superior performance compared to silicon and can be considered a fundamental paradigm shift away from mature silicon… (more)

▼ The use of group III-V semiconductor materials promise superior performance compared to silicon and can be considered a fundamental paradigm shift away from mature silicon technology. Group III-V semiconductors allow for high power operation, drastically high clock speeds, large breakdown fields, and higher Johnson’s Figure of Merit (JFoM). Due to higher electron drift velocity (vd) of the material set, higher on-state current (Ion) is expected than the one in silicon with reduced supply voltage operation. Additionally, strong spontaneous and piezoelectric polarization properties in the III-Nitrides support tighter carrier confinement with high carrier density in a quantum well channel at the heterointerface. By engineering the III-nitride properties, designing a 3D architecture device includes important physical parameters that must be taken into account to analyze device performance. GaN-based devices are desirable for high RF and high power applications for reducing parasitics and improving efficiency. For this reason, III-nitride semiconductor materials provide the possibility of future integration of GaN fin-based 3D devices. This dissertation describes the experimental realization and electrical analysis of III-V FinFET devices with an AlGaN/GaN heterostructure, called “Multi-Gate Heterostructure Fin Field Effect Transistor (MUG-HFinFET).” Process development begins with the experimental demonstration of a Si-compatible baseline AlGaN/GaN FinFET technology, and an exploration of the impact of physical device design parameters such as fin widths, heights, angles and gate lengths. The ohmic contact formation on AlGaN/GaN heterostructure is realized using different metal stacks while taking into account additional annealing effects and produces comparably low contact resistance to other literature reports. Different fabrication processes to distinguish the impact of the device architectures are demonstrated while simultaneously applying for the integration of high-k dielectric metal-gate stack including surface clean and passivation techniques developed for high quality interfaces and low-leakage performance. After MUG-HFinFET technology is implemented and characterized, the impacts of the device design parameters are benchmarked and shows the guidance to device design at the initial stage forward proper device application. The work concludes by assessing the novel characteristics of AlGaN/GaN heterostructure FinFET devices for 3D device design with distinguished performance. According to the distinguished performance across the device geometries and crystal directions, the benchmarks made in this dissertation will guide future device application development toward an AlGaN/GaN FinFET device design to ensure that a proper device design is achieved. Advisors/Committee Members: Harris, H. Rusty (advisor), Huff, Gregory (committee member), Hemmer, Philip (committee member), Mahapatra, Rupak (committee member).

Subjects/Keywords: GaN; FinFET; III-V; semiconductor; ohmic contact; strain; 2DEG

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APA (6^th Edition):

Suh, J. W. (2016). Device Design Parameterization of III-V Multi-Gate FETs. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/159072

Chicago Manual of Style (16^th Edition):

Suh, Jae Woo. “Device Design Parameterization of III-V Multi-Gate FETs.” 2016. Doctoral Dissertation, Texas A&M University. Accessed March 01, 2021. http://hdl.handle.net/1969.1/159072.

MLA Handbook (7^th Edition):

Suh, Jae Woo. “Device Design Parameterization of III-V Multi-Gate FETs.” 2016. Web. 01 Mar 2021.

Vancouver:

Suh JW. Device Design Parameterization of III-V Multi-Gate FETs. [Internet] [Doctoral dissertation]. Texas A&M University; 2016. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/1969.1/159072.

Council of Science Editors:

Suh JW. Device Design Parameterization of III-V Multi-Gate FETs. [Doctoral Dissertation]. Texas A&M University; 2016. Available from: http://hdl.handle.net/1969.1/159072

McMaster University

10. Vukovic, Matthew. Design and Fabrication of InGaAsP Quantum-Well Semiconductor Optical Amplifiers for Integration with Silicon Photonics.

Degree: MASc, 2020, McMaster University

URL: http://hdl.handle.net/11375/25385

►

Silicon photonics provides an environmentally sustainable pathway to a more robust data infrastructure. To compensate for optical power losses, methods of amplification are required; specifically,… (more)

Subjects/Keywords: laser diode; silicon photonics; III-V; semiconductor optical amplifier; fabrication

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APA (6^th Edition):

Vukovic, M. (2020). Design and Fabrication of InGaAsP Quantum-Well Semiconductor Optical Amplifiers for Integration with Silicon Photonics. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/25385

Chicago Manual of Style (16^th Edition):

Vukovic, Matthew. “Design and Fabrication of InGaAsP Quantum-Well Semiconductor Optical Amplifiers for Integration with Silicon Photonics.” 2020. Masters Thesis, McMaster University. Accessed March 01, 2021. http://hdl.handle.net/11375/25385.

MLA Handbook (7^th Edition):

Vukovic, Matthew. “Design and Fabrication of InGaAsP Quantum-Well Semiconductor Optical Amplifiers for Integration with Silicon Photonics.” 2020. Web. 01 Mar 2021.

Vancouver:

Vukovic M. Design and Fabrication of InGaAsP Quantum-Well Semiconductor Optical Amplifiers for Integration with Silicon Photonics. [Internet] [Masters thesis]. McMaster University; 2020. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/11375/25385.

Council of Science Editors:

Vukovic M. Design and Fabrication of InGaAsP Quantum-Well Semiconductor Optical Amplifiers for Integration with Silicon Photonics. [Masters Thesis]. McMaster University; 2020. Available from: http://hdl.handle.net/11375/25385

11. Awan, Kashif. Fabrication of III-V Integrated Photonic Devices .

Degree: 2018, University of Ottawa

URL: http://hdl.handle.net/10393/37729

► This doctoral dissertation focuses on fabrication processes for integrated photonic devices based on III-V semiconductors. This work covers a range of III-V materials and a… (more)

Subjects/Keywords: Integrated photonics; Nanofabrication; Nanophotonics; Semiconductor devices; Nonlinear optics; III-V materials

10 more images…

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APA (6^th Edition):

Awan, K. (2018). Fabrication of III-V Integrated Photonic Devices . (Thesis). University of Ottawa. Retrieved from http://hdl.handle.net/10393/37729

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Awan, Kashif. “Fabrication of III-V Integrated Photonic Devices .” 2018. Thesis, University of Ottawa. Accessed March 01, 2021. http://hdl.handle.net/10393/37729.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Awan, Kashif. “Fabrication of III-V Integrated Photonic Devices .” 2018. Web. 01 Mar 2021.

Vancouver:

Awan K. Fabrication of III-V Integrated Photonic Devices . [Internet] [Thesis]. University of Ottawa; 2018. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/10393/37729.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Awan K. Fabrication of III-V Integrated Photonic Devices . [Thesis]. University of Ottawa; 2018. Available from: http://hdl.handle.net/10393/37729

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Toronto

12. Chen, Chao-Yang. Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions.

Degree: 2013, University of Toronto

URL: http://hdl.handle.net/1807/42727

►

The electrical properties of nanowire-based n-InSb-n-InAs heterojunctions grown by chemical beam epitaxy were investigated both theoretically and experimentally. This heterostructure presented a type-III band alignment… (more)

Subjects/Keywords: Nanowire; III-V semiconductor; Nanotechnology; Electron Beam Induced Current; 0794; 0611

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APA (6^th Edition):

Chen, C. (2013). Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions. (Masters Thesis). University of Toronto. Retrieved from http://hdl.handle.net/1807/42727

Chicago Manual of Style (16^th Edition):

Chen, Chao-Yang. “Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions.” 2013. Masters Thesis, University of Toronto. Accessed March 01, 2021. http://hdl.handle.net/1807/42727.

MLA Handbook (7^th Edition):

Chen, Chao-Yang. “Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions.” 2013. Web. 01 Mar 2021.

Vancouver:

Chen C. Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions. [Internet] [Masters thesis]. University of Toronto; 2013. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/1807/42727.

Council of Science Editors:

Chen C. Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions. [Masters Thesis]. University of Toronto; 2013. Available from: http://hdl.handle.net/1807/42727

13. Wang, Mingjin. Group III-V Nanowire Growth and Characterization.

Degree: 2016, University of California – eScholarship, University of California

URL: http://www.escholarship.org/uc/item/1jx2h6q9

► Electronic and optical devices typically use bulk or quantum wells today, but nanowires are promising building blocks for future devices, due to their structural characterizations… (more)

Subjects/Keywords: Materials Science; Electrical engineering; Group III-V Semiconductor Materials; Nanowire

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APA (6^th Edition):

Wang, M. (2016). Group III-V Nanowire Growth and Characterization. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/1jx2h6q9

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Wang, Mingjin. “Group III-V Nanowire Growth and Characterization.” 2016. Thesis, University of California – eScholarship, University of California. Accessed March 01, 2021. http://www.escholarship.org/uc/item/1jx2h6q9.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Wang, Mingjin. “Group III-V Nanowire Growth and Characterization.” 2016. Web. 01 Mar 2021.

Vancouver:

Wang M. Group III-V Nanowire Growth and Characterization. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2021 Mar 01]. Available from: http://www.escholarship.org/uc/item/1jx2h6q9.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang M. Group III-V Nanowire Growth and Characterization. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/1jx2h6q9

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Illinois – Urbana-Champaign

14. Yu, Lan. Nanolithographically defined semiconductor quantum dots.

Degree: MS, Electrical & Computer Engr, 2015, University of Illinois – Urbana-Champaign

URL: http://hdl.handle.net/2142/78307

► In this thesis,nanolithographically de ned quantum dots are discussed including their fabrication process and optical properties. First, an introduction to the eld of quantum dots… (more)

Subjects/Keywords: III-V Semiconductor; Light-emitting diode (LED); Quantum dots

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APA (6^th Edition):

Yu, L. (2015). Nanolithographically defined semiconductor quantum dots. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/78307

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Yu, Lan. “Nanolithographically defined semiconductor quantum dots.” 2015. Thesis, University of Illinois – Urbana-Champaign. Accessed March 01, 2021. http://hdl.handle.net/2142/78307.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Yu, Lan. “Nanolithographically defined semiconductor quantum dots.” 2015. Web. 01 Mar 2021.

Vancouver:

Yu L. Nanolithographically defined semiconductor quantum dots. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2015. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/2142/78307.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yu L. Nanolithographically defined semiconductor quantum dots. [Thesis]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/78307

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Illinois – Urbana-Champaign

15. Kim, Honggyu. Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection.

Degree: PhD, Materials Science & Engr, 2015, University of Illinois – Urbana-Champaign

URL: http://hdl.handle.net/2142/88210

► There are considerable interests in the use of infrared (IR) photodetectors, in particular mid- and long-wavelength IR detection, for diverse scientific, civil, and military applications.… (more)

▼ There are considerable interests in the use of infrared (IR) photodetectors, in particular mid- and long-wavelength IR detection, for diverse scientific, civil, and military applications. Devices based on the InAs/GaSb or InAs/InAsSb strained-layer-superlattices (SLSs) have gained special attention as the next generation IR photodetectors for replacing current technology based on mercury cadmium telluride. When in contact, InAs and GaSb (or InAs and InAsSb) forms the broken-band alignment (type-II), which gives rise to a narrow effective energy band gap in a short period superlattice, thereby making it suitable for detecting IR radiations of various wavelengths. The advances in epitaxial thin-film growth techniques, such as molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD), have brought dramatic reductions in structural defects, such as misfit dislocations, that are strong carrier scatters and major device failure factors. However, despite the remarkable success in the growth of Type-II SLSs (T2SLs) in the form of dislocation-free thick layers, theoretical promises of high device performance of these structures have yet to be realized, primarily due to the Shockley-Read-Hall recombination process which shortens the minority carrier lifetime. The microscopic origin responsible for the short carrier lifetime is still unknown, which is a major impediment for the further improvements of SLS technologies. Thus, this thesis is motivated by the need of microscopic understanding of structure and defects in T2SLs. A SLS is typically comprised of alternating lattice-mismatched layers, with thicknesses of the constituent layers on a few nanometer scale. Structural analysis at high spatial resolution is therefore mandatory in order to develop a detailed understanding of SLS structures. Here, scanning transmission electron microscopy (STEM) is used as a major tool for structural characterization of SLSs. In a STEM with a high angle annular dark field (HAADF) detector, the recorded real space image can be readily interpreted based on the peak intensities and peak positions as the intensity scales with the atomic density and atomic numbers to a good approximation. In particular, a probe forming spherical aberration corrector improves the spatial resolution of STEM to 1 Å or better, thus providing the resolving power for imaging individual atomic columns. Here, HAADF-STEM, together with the advancement in image processing methods, are employed for quantitative structural analysis of InAs/GaSb and InAs/InAsSb T2SLs. Among the results obtained by this research, first of all, a newly developed pattern recognition method revealed asymmetric interfacial sharpness and chemical intermixing in InAs/GaSb T2SL. A correlative study with atom probe tomography (APT) demonstrates segregation of Ga, In, and Sb, which are crucial information for the optimization of interface design. Next, a combination of two dimensional Gaussian peak fitting and template matching based image processing is used to accurately… Advisors/Committee Members: Zuo, Jian-Min (advisor), Zuo, Jian-Min (Committee Chair), Shim, Moonsub (committee member), Wasserman, Daniel M. (committee member), Shoemaker, Daniel P. (committee member).

Subjects/Keywords: III-V semiconductor; Superlattice; Scanning Transmission Electron Microscopy; Strain; Point defect

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APA (6^th Edition):

Kim, H. (2015). Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/88210

Chicago Manual of Style (16^th Edition):

Kim, Honggyu. “Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection.” 2015. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed March 01, 2021. http://hdl.handle.net/2142/88210.

MLA Handbook (7^th Edition):

Kim, Honggyu. “Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection.” 2015. Web. 01 Mar 2021.

Vancouver:

Kim H. Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2015. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/2142/88210.

Council of Science Editors:

Kim H. Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/88210

University of Arizona

16. Zeng, Chao. Potential Environmental and Health Risks from Nanoparticles and III-V Materials Used in Semiconductor Manufacturing .

Degree: 2017, University of Arizona

URL: http://hdl.handle.net/10150/623067

► Nanoparticles (NPs) have unique electronic, optical and chemical properties due to the extreme small size. Engineered nanoparticles (ENPs) are intentionally produced for desired applications, with… (more)

▼ Nanoparticles (NPs) have unique electronic, optical and chemical properties due to the extreme small size. Engineered nanoparticles (ENPs) are intentionally produced for desired applications, with specific properties related to shape, size, surface properties and chemistry. Nano-sized silica (SiO2), alumina (Al2O3) and ceria (CeO2) are three important ENPs with large production and wide applications. One of the principal uses of these ENPs is in chemical and mechanical planarization (CMP), a key process applied to polish wafers when fabricating integrated circuits in semiconductor manufacturing, in which SiO2, Al2O3 and CeO2 NPs are used as abrasive particles in CMP slurries. CMP generates large amounts of waste effluents containing high levels of ENPs. Some ENPs have been proven to be able to cause toxicity to microorganisms and higher life forms, including humans. Therefore, there are concerns about the potential risks that ENPs may pose to the natural environment and human health. In addition, III-V materials like indium arsenide (InAs) and gallium arsenide (GaAs) are increasingly used in electronic and photovoltaic devices. Besides ENPs, the waste streams from III-V manufacturing also contain dissolved and particulate materials removed from III-V films during CMP. Arsenic is one of the most notorious contaminants that has been widely studied, while only very limited ecotoxicity information is available for gallium and indium. Finally, since ENPs have high surface area, it is very likely they will interact with the soluble species (such as arsenic ions) in CMP wastewater. Therefore, it is of great importance to understand whether the interactions between these materials could alter their fate and toxicity. The objective of this work is to investigate the potential environmental and health risks from the ENPs and III-V materials used in semiconductor manufacturing. To this end, the physical, chemical and toxicological characterization of ENPs used in CMP was performed (Chapter 3). Furthermore, the fate and transport of the most used ENP, SiO2, in porous media was studied (Chapter 4). In addition, acute toxicity of As(III), As(V), In(III) and Ga(III) species was evaluated using different bioassays (Chapter 5). Finally, the cytotoxicity of ENPs used in CMP slurries to human lung bronchial epithelial cells was evaluated using an impedance based real time cell analysis (RTCA) assay (Chapter 6). In Chapter 3, four model slurries containing ENPs including colloidal silica (c-SiO2), fumed silica (f-SiO2) cerium oxide (CeO2) and aluminum oxide (Al2O3) were characterized for their physical, chemical and toxicological properties. Ecotoxicity of these slurries to the marine bacterium, Aliivibrio fischeri, was evaluated by measuring its bioluminescence activity as a function of the ENP concentration dosed. The results showed that f-SiO2 and CeO2 were not toxic at concentrations up to 700 and 1000 mg/L, respectively. On the other hand, c-SiO2 and Al2O3 were inhibitory only at very high concentrations (>600 mg/L). At about 1300… Advisors/Committee Members: Sierra-Alvarez, Reyes (advisor), Shadman, Farhang (advisor), Sierra-Alvarez, Reyes (committeemember), Shadman, Farhang (committeemember), Field, Jim A. (committeemember), Curry, Joan E. (committeemember).

Subjects/Keywords: CMP; ecotoxicity; engineered nanoparticles; III-V semiconductor materials; arsenic

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APA (6^th Edition):

Zeng, C. (2017). Potential Environmental and Health Risks from Nanoparticles and III-V Materials Used in Semiconductor Manufacturing . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/623067

Chicago Manual of Style (16^th Edition):

Zeng, Chao. “Potential Environmental and Health Risks from Nanoparticles and III-V Materials Used in Semiconductor Manufacturing .” 2017. Doctoral Dissertation, University of Arizona. Accessed March 01, 2021. http://hdl.handle.net/10150/623067.

MLA Handbook (7^th Edition):

Zeng, Chao. “Potential Environmental and Health Risks from Nanoparticles and III-V Materials Used in Semiconductor Manufacturing .” 2017. Web. 01 Mar 2021.

Vancouver:

Zeng C. Potential Environmental and Health Risks from Nanoparticles and III-V Materials Used in Semiconductor Manufacturing . [Internet] [Doctoral dissertation]. University of Arizona; 2017. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/10150/623067.

Council of Science Editors:

Zeng C. Potential Environmental and Health Risks from Nanoparticles and III-V Materials Used in Semiconductor Manufacturing . [Doctoral Dissertation]. University of Arizona; 2017. Available from: http://hdl.handle.net/10150/623067

University of New South Wales

17. Zhang, Yi. Study on III-V materials for hot carrier solar cell absorbers.

Degree: Photovoltaics & Renewable Energy Engineering, 2017, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/57852 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:45012/SOURCE02?view=true

► Hot carrier solar cell is an idea of third generation solar cells, which could boost the energy conversion efficiency greater than 60% at one sun… (more)

▼ Hot carrier solar cell is an idea of third generation solar cells, which could boost the energy conversion efficiency greater than 60% at one sun condition through minimizing the carrier thermalization loss. These cells consist of one hot carrier absorber sandwiched by two energy selective contacts. The energy selective contacts are able to extract hot carriers at a certain energy level preventing energy dissipation. On the other hand, the hot carrier absorber plays a more important role, which aims to extend thermalization time to several nanoseconds at least. Some III-V semiconductor materials have advantages over the other materials such as small electronic bandgap and large phononic bandgap, which could dramatically reduce the carrier cooling rate through Klemens and/or Ridley decay mechanisms. Furthermore, some unknown mechanisms which might also affect the carrier dynamics are worth for investigation. Therefore it is essential to investigate these specific III-V semiconductor materials comprehensively. In this project, specific bulk and multiple quantum well III-V semiconductors have been studied in terms of their optical and crystal properties. Energetic neutral atom beam lithography and epitaxy-molecular beam epitaxy (ENABLE-MBE) and conventional molecular beam epitaxy (MBE) were employed to fabricate good quality materials with required parameters. Then a variety of characterization techniques are applied on these samples for their structural and optical properties measurement. Among these techniques, the time resolved photoluminescence (TRPL) in picosecond is the most important technique to indicate carrier cooling rate. On the other hand, several fitting methods on TRPL had been developed and applied on the optical results to figure out the carrier thermalization time. An extend thermalization time was observed in InGaN alloy and carrier lifetime in nanoseconds was achieved in GaAs/AlAs multiple quantum wells in different thicknesses due to bottleneck effect and carrier screening. In general, this project give a comprehensive understanding on the studied materials and concludes that the multiple quantum wells structure might be the most appropriate candidate as a hot carrier absorber for hot carrier solar cells. Advisors/Committee Members: Conibeer, Gavin, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Tayebjee, Murad , Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Shrestha, Santosh , Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Huang, Shujuan , Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW.

Subjects/Keywords: InGaN alloy; Hot carrier solar cell; III-V semiconductor; GaAs MQWs

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APA (6^th Edition):

Zhang, Y. (2017). Study on III-V materials for hot carrier solar cell absorbers. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/57852 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:45012/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Zhang, Yi. “Study on III-V materials for hot carrier solar cell absorbers.” 2017. Doctoral Dissertation, University of New South Wales. Accessed March 01, 2021. http://handle.unsw.edu.au/1959.4/57852 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:45012/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Zhang, Yi. “Study on III-V materials for hot carrier solar cell absorbers.” 2017. Web. 01 Mar 2021.

Vancouver:

Zhang Y. Study on III-V materials for hot carrier solar cell absorbers. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2021 Mar 01]. Available from: http://handle.unsw.edu.au/1959.4/57852 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:45012/SOURCE02?view=true.

Council of Science Editors:

Zhang Y. Study on III-V materials for hot carrier solar cell absorbers. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/57852 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:45012/SOURCE02?view=true

Université de Grenoble

18. Maurice, Axel. Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects.

Degree: Docteur es, Nanophysique, 2013, Université de Grenoble

URL: http://www.theses.fr/2013GRENY064

►

Depuis quelques années, les diodes électroluminescentes organiques (OLEDs) connaissent un véritable essor se traduisant par leur intégration progressive au sein d'appareils électroniques « grand public… (more)

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Depuis quelques années, les diodes électroluminescentes organiques (OLEDs) connaissent un véritable essor se traduisant par leur intégration progressive au sein d'appareils électroniques « grand public » : téléphones portables, téléviseurs, etc. En dépit d'avantages indéniables, des obstacles — notamment des coûts de fabrication élevés et des durées de vie insuffisantes — freinent encore l'adoption massive de cette technologie. Le remplacement de la couche émissive organique par des quantum dots pourrait résoudre tout ou partie de ces problèmes, tout en améliorant les performances des dispositifs « QD-LEDs » ainsi constitués.L'objectif de cette thèse consiste à élaborer, par voie colloïdale, des nanocristaux semi-conducteurs non toxiques et présentant toutes les caractéristiques requises pour leur intégration dans des QD-LEDs.Un protocole de synthèse de nanoparticules d'antimoniure d'indium (InSb) reposant sur l'injection du précurseur d'antimoine en phase gazeuse a tout d'abord été mis au point. Suite à l'optimisation des différents paramètres de réaction, les nanocristaux obtenus par cette voie présentent un certain nombre de qualités : bonne cristallinité, faible dispersion en taille et excellente stabilité en solution. En revanche, l'absence de photoluminescence — attribuée à la présence d'une coquille amorphe autour du cœur des particules — ne permet pas à l'heure actuelle d'exploiter pleinement ces nanocristaux dans des applications optiques.L'étude a ensuite été dirigée vers la production de quantum dots à base de phosphure d'indium (InP), afin de permettre la réalisation ultérieure d'un dispositif QD-LED fonctionnel. Grâce à l'élaboration de structures à gradient de composition, des nanocristaux dotés d'un fort rendement quantique de photoluminescence ainsi que d'une excellente stabilité en milieu oxydant ont pu être élaborés.Enfin, des essais préliminaires portant sur l'intégration des nanocristaux à base de phosphure d'indium dans des diodes électroluminescentes ont été menés. Le dépôt des quantum dots a été réalisé selon la technique dite de « LANGMUIR-SCHAEFFER stamping » tandis que les autres couches présentes dans l'empilement — à base de petites molécules — ont été élaborées par évaporation. En dépit de performances encore modestes, l'émission des QD-LEDs ainsi produites présente toutefois une nette contribution provenant de la couche de nanocristaux Ces résultats ouvrent ainsi la voie à de nouveaux développements très prometteurs.

During the past few years, organic light-emitting devices (OLEDs) gradually appeared in consumer electronics such as smartphones and television sets. Unfortunately, the OLED market is still curbed by some drawbacks of this technology — namely high manufacturing costs and limited lifetime. By replacing the organic emitting layer by quantum dots, one could expect to partially solve these problems and further improve the performances of the so-called QD-LED devices.The aim of this study is to produce semiconductor nanocrystal quantum dots which are non-toxic and exhibit all…

Advisors/Committee Members: Hyot, Bérangère (thesis director), Reiss, Peter (thesis director).

Subjects/Keywords: Nano-objets; Semi-conducteur; III-V; Antimoniure d'indium; Phosphure d'indium; Nano-objects; Semiconductor; III-V; Indium antimonide; Indium phosphide; 530

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Maurice, A. (2013). Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2013GRENY064

Chicago Manual of Style (16^th Edition):

Maurice, Axel. “Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects.” 2013. Doctoral Dissertation, Université de Grenoble. Accessed March 01, 2021. http://www.theses.fr/2013GRENY064.

MLA Handbook (7^th Edition):

Maurice, Axel. “Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects.” 2013. Web. 01 Mar 2021.

Vancouver:

Maurice A. Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects. [Internet] [Doctoral dissertation]. Université de Grenoble; 2013. [cited 2021 Mar 01]. Available from: http://www.theses.fr/2013GRENY064.

Council of Science Editors:

Maurice A. Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects. [Doctoral Dissertation]. Université de Grenoble; 2013. Available from: http://www.theses.fr/2013GRENY064

Universidade Estadual de Campinas

19. Princepe, Débora, 1989-. Optical gain medium incorporation into semiconductor optomechanical cavities : Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor: Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor.

Degree: 2018, Universidade Estadual de Campinas

URL: http://repositorio.unicamp.br/jspui/handle/REPOSIP/331177

► Abstract: Optomechanical and electromechanical systems based on III-V semiconductor materials have become a topic of high interest. Beyond the attractive material properties, this attention is… (more)

▼ Abstract: Optomechanical and electromechanical systems based on III-V semiconductor materials have become a topic of high interest. Beyond the attractive material properties, this attention is mainly due to the possibility of integrating an optomechanical resonator with a laser cavity in a single device. Theoretical and experimental investigation show that interaction in these hybrid systems can provide enhancement of the optomechanical cooling rate, control of the laser emission, among other effects. In this thesis, we present our work on active optomechanical resonators built on semiconductor material. Under a semi-classical approach, a model based on the laser rate equations coupled to a harmonic oscillator was developed, with both optical resonance and loss modified by the cavity deformation. This model differs from usual Cavity Optomechanics since both the driving field and the detuning are absent, leading to a control done by current injection. A novel coupling model between mechanical vibration and laser relaxation oscillation is derived from the system dynamics, such that the amplification regime is achieved for certain value of overall optomechanical strength. Under this condition, photons and mechanical vibration present self-sustained oscillation – therefore, a self-pulsed laser is obtained. Instrumentation for the fabrication and measurement of an optomechanical laser was developed based on microdisk geometry with optical pump and purely dispersive optomechanical coupling. We then present an investigation of the relevant parameters for the design of an optomechanical laser cavity based on GaAs platform. Laser emission and optomechanical interaction are predicted and observed in microdisks with quantum well gain medium. We discuss the significant challenges involved in obtaining an optomechanical laser. Finally, we present the design of a realistic optomechanical laser with a strong enhancement of the optomechanical coupling employing both dispersive and dissipative mechanisms. Essentially an active optomechanical bullseye with very strong dispersive coupling is combined with a dissipative structure, an external metallic ring. The dispersive interaction is enhanced by the confinement of mechanical and optical modes near the disk edge and the dissipative coupling effect is provided by near field interaction with the metallic ring separated by a small gap. This novel dissipative optomechanical device is shown to potentially result in a realistic optomechanical laser Advisors/Committee Members: UNIVERSIDADE ESTADUAL DE CAMPINAS (CRUESP), Frateschi, Newton Cesário, 1962- (advisor), Wiederhecker, Gustavo Silva, 1981- (coadvisor), Universidade Estadual de Campinas. Instituto de Física Gleb Wataghin (institution), Programa de Pós-Graduação em Física (nameofprogram), Barbosa, Felippe Alexandre Silva (committee member), Gabrielli, Lucas Heitzmann (committee member), Nussenzveig, Paulo Alberto (committee member), Borges, Ben-Hur Viana (committee member).

Subjects/Keywords: Laser de semicondutor; Optomecânica de cavidade; Semicondutores III-V; Nanofotônica; Semiconductor lasers; Cavity optomechanics; III-V Semiconductors; Nanophotonics

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APA (6^th Edition):

Princepe, Débora, 1. (2018). Optical gain medium incorporation into semiconductor optomechanical cavities : Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor: Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor. (Thesis). Universidade Estadual de Campinas. Retrieved from http://repositorio.unicamp.br/jspui/handle/REPOSIP/331177

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Princepe, Débora, 1989-. “Optical gain medium incorporation into semiconductor optomechanical cavities : Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor: Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor.” 2018. Thesis, Universidade Estadual de Campinas. Accessed March 01, 2021. http://repositorio.unicamp.br/jspui/handle/REPOSIP/331177.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Princepe, Débora, 1989-. “Optical gain medium incorporation into semiconductor optomechanical cavities : Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor: Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor.” 2018. Web. 01 Mar 2021.

Vancouver:

Princepe, Débora 1. Optical gain medium incorporation into semiconductor optomechanical cavities : Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor: Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor. [Internet] [Thesis]. Universidade Estadual de Campinas; 2018. [cited 2021 Mar 01]. Available from: http://repositorio.unicamp.br/jspui/handle/REPOSIP/331177.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Princepe, Débora 1. Optical gain medium incorporation into semiconductor optomechanical cavities : Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor: Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor. [Thesis]. Universidade Estadual de Campinas; 2018. Available from: http://repositorio.unicamp.br/jspui/handle/REPOSIP/331177

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Ferrah, Djawhar. Etude des propriétés physico-chimiques d'interfaces par photoémission : Abduction in first order logic with equality.

Degree: Docteur es, Matériaux, 2013, Ecully, Ecole centrale de Lyon

URL: http://www.theses.fr/2013ECDL0048

► L'objectif de cette thèse est d'étudier les propriétés physico-chimiques des surfaces et des interfaces des couches minces par spectroscopie de photoémission (XPS), diffraction des photoélectrons… (more)

▼ L'objectif de cette thèse est d'étudier les propriétés physico-chimiques des surfaces et des interfaces des couches minces par spectroscopie de photoémission (XPS), diffraction des photoélectrons (XPD), et la photoémission résolue en temps (PTR). Les expériences sont réalisées en utilisant une source standard des rayons X AlKa à l'INL ou les rayons X mous auprès du synchrotron Soleil. La première étude sur le système Pt/ Gd203/ Si(111) a montré que le transfert de charge entre le Pt et 0 à l'interface Pt/Gd203 implique un déplacement chimique de niveau Pt4f sans modification des caractéristiques de la composante métallique des spectres XPS. L'étude XPD montre que Pt se cristallise partiellement en deux domaines : [110] Pt(111) // [110] Gd203 (111) et [101] Pt(111) / / [110] Gd203 (111). De plus, une autre phase ordonnée d'oxyde de platine Pt02 à l'interface a été observée. A travers la caractérisation de la morphologie déterminée par la technique AFM et XPD, nous avons discuté l'adhésion aux interfaces métal/oxyde. La deuxième étude traite l'évolution d'interface d'un système modèle : métal non réactive/ semi-conducteur, dépendent fortement des conditions thermodynamiques. Nous avons étudié la couche mince d'Au déposée sur le substrat Si(001) par photoémission résolue en temps (TEMPO- synchrotron Soleil). L'étude XPS, montre avant le recuit la formation de l'oxyde native Si02 sur l'heterostructure à température ambiante. La désorption de cet oxyde se produit à faible température et induit une décroissance de l'intensité des photoélectrons durant le temps de recuit. La désorption de l'oxyde Si02 et la formation de l'alliage AuSi sont responsables de la gravure et la formation des puits de forme cubique à la surface de Si due à l'activité catalytique de l'Au. La troisième étude concerne la croissance du graphène à partir de cristal de SiC(0001)- face Si par décomposition thermique. Le niveau de coeur C1s résolu en trois composantes principales sont associées au carbone de 6H-SiC, de graphène, et l'interface graphène/ 6H-SiC (0001). L'intensité de chaque composante est rapportée en fonction de l'angle polaire (azimutale) pour différents angles azimutales (polaire). Les mesures XPD fournissent des informations cristallographiques qui indiquent clairement que les feuillets de graphène sont organisés en structure graphite sur le substrat 6H-SiC (0001). Cette organisation résulte de l’effondrement de la maille de substrat. Enfin, le découplage à l'interface graphène/ 6H-SiC (0001) par l'oxygène a été étudié par XPS. La dernière étude concerne la croissance du film mince d'InP par MBE sur le substrat SrTi03 (001). L'intégration des semi-conducteurs III-V sur le Si, en utilisant la couche tampon d'oxyde SrTi03 est l'objet des intenses recherches, en raison des applications prometteuses dans le domaine de nano-optoélectronique. Les niveaux de coeur O1s, Sr3d, Ti2p, In3d, P2p ont été analysés et rapportés en fonction de l'angle azimutale à différents angles polaires. La comparaison des courbes XPD azimutales de Sr3d et In3d… Advisors/Committee Members: Grenet, Geneviève (thesis director), Penuelas, José (thesis director).

Subjects/Keywords: Couches minces; Semiconducteur; Oxydes; Graphènes; XPS; XPD; III-V; Thin films; Semiconductor; Oxide; Graphene; XPS; XPD; III-V

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Ferrah, D. (2013). Etude des propriétés physico-chimiques d'interfaces par photoémission : Abduction in first order logic with equality. (Doctoral Dissertation). Ecully, Ecole centrale de Lyon. Retrieved from http://www.theses.fr/2013ECDL0048

Chicago Manual of Style (16^th Edition):

Ferrah, Djawhar. “Etude des propriétés physico-chimiques d'interfaces par photoémission : Abduction in first order logic with equality.” 2013. Doctoral Dissertation, Ecully, Ecole centrale de Lyon. Accessed March 01, 2021. http://www.theses.fr/2013ECDL0048.

MLA Handbook (7^th Edition):

Ferrah, Djawhar. “Etude des propriétés physico-chimiques d'interfaces par photoémission : Abduction in first order logic with equality.” 2013. Web. 01 Mar 2021.

Vancouver:

Ferrah D. Etude des propriétés physico-chimiques d'interfaces par photoémission : Abduction in first order logic with equality. [Internet] [Doctoral dissertation]. Ecully, Ecole centrale de Lyon; 2013. [cited 2021 Mar 01]. Available from: http://www.theses.fr/2013ECDL0048.

Council of Science Editors:

Ferrah D. Etude des propriétés physico-chimiques d'interfaces par photoémission : Abduction in first order logic with equality. [Doctoral Dissertation]. Ecully, Ecole centrale de Lyon; 2013. Available from: http://www.theses.fr/2013ECDL0048

21. Williams, Howard R. Compound semiconductor material manufacture, process improvement.

Degree: PhD, 2002, University of South Wales

URL: https://pure.southwales.ac.uk/en/studentthesis/compound-semiconductor-material-manufacture-process-improvement(d0373158-08d9-4332-9278-f5353203dcd0).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.749655

► IQE (Europe) Ltd. manufactures group III/V compound semiconductor material structures, using the Metal Organic Vapour Phase Epitaxy process. The manufactured ranges of semi-conducting materials are… (more)

▼ IQE (Europe) Ltd. manufactures group III/V compound semiconductor material structures, using the Metal Organic Vapour Phase Epitaxy process. The manufactured ranges of semi-conducting materials are relative to discrete or multi-compound use of Gallium Arsenide or Indium Phosphide [III/V]. For MOVPE to compete in large-scale markets, the manufacturing process requires transformation into a reliable, repeatable production process. This need is identified within the process scrap percentage of the process when benchmarked against the more mature Si-CVD process. With this wide-ranging product base and different material systems, flexible processes and systems are essential. The negative impact however, of this demanded flexibility is a complex system, resulting in instability. Minor fluctuations in time, flow, pressure, temperature, or composition in the manufacturing process, will lead to characteristic differences in the produced material [product], when comparing the prescribed run to the actual run. The product profile changes very rapidly, correspondingly the failure profile of the process is equally as dynamic, it is essential therefore that the analysis and projected activities and actions can be identified and consolidated in a timely manner. This project evaluates the process used by IQEE to manufacture III/V compound semi-conducting material structures and uses the business performance to identify the process drivers. One year's [1997] business and process information is used for a single iteration of the improvement cycle. These drivers are then utilised as operators and offer the critical weaknesses in the process related to performance blockages. Some of the techniques utilised in the process evaluation and cause derivation; are original contributions specifically derived for use with a multi-platform complex process with multiple cause and effect operators. A double reporting FMEA contributes a differing rank for like machines running differing products, offering a machine specific failure profile. A novel composite of P-diagram and process flow techniques enables determination of activity influences confirming the key failure mechanism as previously identified by the business risk analysis. This project concludes by nominating the key failure mechanism accounting for 41% of the approximate 50% scrap figure identified again within the business risk analysis. The effects attributed to this failure mechanism are 2- dimensionally analysed utilising an original double operating FMEA, plotting effect to effect for the individual causes, offering a prioritised list of failure categories. The highest priority failure mode is addressed by an equipment design exercise, resulting in an overall 10% sales potential recontribution.

Subjects/Keywords: 621.3815; Manufacturing processes; Compound semiconductor materials; Metal Organic Vapour Phase Epitaxy; MOVPE; Group III/V compound semiconductor material structures

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APA (6^th Edition):

Williams, H. R. (2002). Compound semiconductor material manufacture, process improvement. (Doctoral Dissertation). University of South Wales. Retrieved from https://pure.southwales.ac.uk/en/studentthesis/compound-semiconductor-material-manufacture-process-improvement(d0373158-08d9-4332-9278-f5353203dcd0).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.749655

Chicago Manual of Style (16^th Edition):

Williams, Howard R. “Compound semiconductor material manufacture, process improvement.” 2002. Doctoral Dissertation, University of South Wales. Accessed March 01, 2021. https://pure.southwales.ac.uk/en/studentthesis/compound-semiconductor-material-manufacture-process-improvement(d0373158-08d9-4332-9278-f5353203dcd0).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.749655.

MLA Handbook (7^th Edition):

Williams, Howard R. “Compound semiconductor material manufacture, process improvement.” 2002. Web. 01 Mar 2021.

Vancouver:

Williams HR. Compound semiconductor material manufacture, process improvement. [Internet] [Doctoral dissertation]. University of South Wales; 2002. [cited 2021 Mar 01]. Available from: https://pure.southwales.ac.uk/en/studentthesis/compound-semiconductor-material-manufacture-process-improvement(d0373158-08d9-4332-9278-f5353203dcd0).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.749655.

Council of Science Editors:

Williams HR. Compound semiconductor material manufacture, process improvement. [Doctoral Dissertation]. University of South Wales; 2002. Available from: https://pure.southwales.ac.uk/en/studentthesis/compound-semiconductor-material-manufacture-process-improvement(d0373158-08d9-4332-9278-f5353203dcd0).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.749655

NSYSU

22. Chen, Hao. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides.

Degree: Master, Electrical Engineering, 2014, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726114-150937

► Due to the high electron mobility compared with Si, much attention has been focused on III-V compound semiconductors (gallium arsenide (GaAs), indium phosphide (InP), indium… (more)

Subjects/Keywords: Aluminum Oxide; Titanium Oxide; III-V Compound Semiconductor; MOS Structures; (NH4)2S treatment

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APA (6^th Edition):

Chen, H. (2014). Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726114-150937

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Chen, Hao. “Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides.” 2014. Thesis, NSYSU. Accessed March 01, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726114-150937.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Chen, Hao. “Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides.” 2014. Web. 01 Mar 2021.

Vancouver:

Chen H. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides. [Internet] [Thesis]. NSYSU; 2014. [cited 2021 Mar 01]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726114-150937.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen H. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726114-150937

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

UCLA

23. Lin, Andrew. Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices.

Degree: Electrical Engineering, 2015, UCLA

URL: http://www.escholarship.org/uc/item/3m84h18t

► Extensive research efforts have been devoted to the study and development of III-V compound semiconductor nanowires (NWs) and nanopillars (NPs) because of their unique physical… (more)

▼ Extensive research efforts have been devoted to the study and development of III-V compound semiconductor nanowires (NWs) and nanopillars (NPs) because of their unique physical properties and ability to form high quality, highly lattice-mismatched axial and radial heterostructures. These advantages lead to precise nano-bandgap engineering to achieve new device functionalities. One unique and powerful approach to realize these NPs is by catalyst-free, selective-area epitaxy (SAE) via metal-organic chemical vapor deposition, in which the NP location and diameter can be precisely controlled lithographically. Early demonstrations of electronic and optoelectronic devices based on these NPs, however, are often inferior compared to their planar counterparts due to a few factors: (1) interface/surface states, (2) inaccurate doping calibration, and (3) increased carrier scattering and trapping from stacking fault formation in the NPs. In this study, the detailed growth mechanisms of different III-As, III-Sb and III-P NPs and their heterostructures are investigated. These NPs are then fabricated into single-NP field-effect transistors (FETs) to probe their electrical properties. It is shown that these devices are highly diameter-dependent, mainly because of the effects of surface states. By growing a high band-gap shell around the NP cores to passivate the surface, the device performance can be significantly improved. Further fabrication and characterization of vertical surround-gate FETs using a high-mobility InAs/InP NP channel is also discussed. Aside from the radial NP heterostructures, different approaches to achieve purely axial heterostructures in InAs/In(As)P materials are also presented with excellent interface quality. Both single barrier and double barrier structures are realized and fabricated into devices that show carrier transport characteristics over a barrier and even resonant tunneling behavior. Antimonide-based NPs are also studied for their immense application in high-speed electronics and mid-IR optoelectronics. Different growth regimes are probed to achieve InSb NPs and InAsSb NPs.

Subjects/Keywords: Electrical engineering; Materials Science; Heterostructures; III-V semiconductor; Nanopillar; Nanowire; Surface states; Transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Lin, A. (2015). Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/3m84h18t

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Lin, Andrew. “Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices.” 2015. Thesis, UCLA. Accessed March 01, 2021. http://www.escholarship.org/uc/item/3m84h18t.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Lin, Andrew. “Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices.” 2015. Web. 01 Mar 2021.

Vancouver:

Lin A. Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices. [Internet] [Thesis]. UCLA; 2015. [cited 2021 Mar 01]. Available from: http://www.escholarship.org/uc/item/3m84h18t.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin A. Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices. [Thesis]. UCLA; 2015. Available from: http://www.escholarship.org/uc/item/3m84h18t

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Vanderbilt University

24. Ramachandran, Vishwanath. Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

URL: http://hdl.handle.net/1803/10512

► Single-event mechanisms in InAlSb/InAs/AlGaSb high electron mobility transistors (HEMTs) are identified and investigated. Single-event transients are characterized using broadbeam and microbeam experiments along with 2-D… (more)

Subjects/Keywords: High Electron Mobility Transistor; HEMT; single-event effects; radiation effects; III-V; compound semiconductor

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APA (6^th Edition):

Ramachandran, V. (2013). Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/10512

Chicago Manual of Style (16^th Edition):

Ramachandran, Vishwanath. “Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed March 01, 2021. http://hdl.handle.net/1803/10512.

MLA Handbook (7^th Edition):

Ramachandran, Vishwanath. “Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors.” 2013. Web. 01 Mar 2021.

Vancouver:

Ramachandran V. Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/1803/10512.

Council of Science Editors:

Ramachandran V. Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://hdl.handle.net/1803/10512

McMaster University

25. Tajik, Nooshin. Sulfur Passivation of III-V Semiconductor Nanowires.

Degree: PhD, 2013, McMaster University

URL: http://hdl.handle.net/11375/12834

►

An ammonium polysulfide (NH₄)₂S_x solution was optimized through a series of experiments to be used for surface passivation of III-V nanowires . The effectiveness… (more)

Subjects/Keywords: Nanowire; Passivation; III-V semiconductor; Sulfur; Photoluminescence; Solar Cell; Engineering Physics; Engineering Physics

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APA (6^th Edition):

Tajik, N. (2013). Sulfur Passivation of III-V Semiconductor Nanowires. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/12834

Chicago Manual of Style (16^th Edition):

Tajik, Nooshin. “Sulfur Passivation of III-V Semiconductor Nanowires.” 2013. Doctoral Dissertation, McMaster University. Accessed March 01, 2021. http://hdl.handle.net/11375/12834.

MLA Handbook (7^th Edition):

Tajik, Nooshin. “Sulfur Passivation of III-V Semiconductor Nanowires.” 2013. Web. 01 Mar 2021.

Vancouver:

Tajik N. Sulfur Passivation of III-V Semiconductor Nanowires. [Internet] [Doctoral dissertation]. McMaster University; 2013. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/11375/12834.

Council of Science Editors:

Tajik N. Sulfur Passivation of III-V Semiconductor Nanowires. [Doctoral Dissertation]. McMaster University; 2013. Available from: http://hdl.handle.net/11375/12834

Texas A&M University

26. Wood, Matthew R. Order and Disorder in Type–II InAs/InAsSb Superlattices.

Degree: PhD, Applied Physics, 2017, Texas A&M University

URL: http://hdl.handle.net/1969.1/173176

► We employ cross–sectional scanning tunneling microscopy (STM) to examine how an as–grown InAs/InAsSb superlattice differs from the intended one as regards translational invariance in (001)… (more)

▼ We employ cross–sectional scanning tunneling microscopy (STM) to examine how an as–grown InAs/InAsSb superlattice differs from the intended one as regards translational invariance in (001) planes perpendicular to the growth direction. This requires atomic–resolution, lateral surveys paralleling the buffer/epilayer interface for up to a micron in orthogonal (–1–10) or (1–10) cross sections, together with repeated lateral surveys at representative vertical locations (i.e., spanned superlattice repeats) within the multilayer stack. We show that STM may be used to accurately map the period fluctuations throughout this superlattice. The concept, analogous to Bragg's law in high–resolution x–ray diffraction, relies on an analysis of the [001]–convolved reciprocal–space satellite peaks obtained from discrete Fourier transforms of individual STM images. Properly implemented, the technique enables local period measurements that reliably discriminate lateral fluctuations localized to within ~ 40 nm along <110> directions in the growth plane. While not as accurate as x–ray, the inherent, single–image measurement error associated with the method may be made as small as 0.1%, allowing the lateral period fluctuations contributing to inhomogeneous energy broadening and carrier localization in these structures to be pinpointed and quantified. The direct visualization of unexpectedly–large fluctuations on nanometer length scales is tied to a stochastic description of correlated interface roughness. We also introduce a new technique to automatically tabulate the crystalline coordinates of previously–identified top–layer antimony atoms and construct the antimony pair–correlation functions for orthogonal cross sections. Nearest–neighbor correlations on opposing cleavage faces are inversely related, with the (–1–10) deficit at nearest–neighbor sites balanced by a compensating (1–10) surplus. The logarithm of this preference scales inversely with bulk antimony fraction. In more vivid physical terms, the preferential [110]–incorporation of nearest–neighbor antimony atoms in the bulk is traced to the inferred concentration of [110]–oriented antimony dimers at the growth surface Advisors/Committee Members: Weimer, Michael B (advisor), Belyanin, Alexey (committee member), Madsen, Christi K (committee member), Ross Jr., Joseph H (committee member).

Subjects/Keywords: Cross–Sectional Scanning; Tunneling Microscopy; III–V; Semiconductor; Superlattice; Alloy Order; Interface Roughness

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APA (6^th Edition):

Wood, M. R. (2017). Order and Disorder in Type–II InAs/InAsSb Superlattices. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/173176

Chicago Manual of Style (16^th Edition):

Wood, Matthew R. “Order and Disorder in Type–II InAs/InAsSb Superlattices.” 2017. Doctoral Dissertation, Texas A&M University. Accessed March 01, 2021. http://hdl.handle.net/1969.1/173176.

MLA Handbook (7^th Edition):

Wood, Matthew R. “Order and Disorder in Type–II InAs/InAsSb Superlattices.” 2017. Web. 01 Mar 2021.

Vancouver:

Wood MR. Order and Disorder in Type–II InAs/InAsSb Superlattices. [Internet] [Doctoral dissertation]. Texas A&M University; 2017. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/1969.1/173176.

Council of Science Editors:

Wood MR. Order and Disorder in Type–II InAs/InAsSb Superlattices. [Doctoral Dissertation]. Texas A&M University; 2017. Available from: http://hdl.handle.net/1969.1/173176

University of Lund

27. Zou, Xianshao. Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors.

Degree: 2020, University of Lund

URL: https://lup.lub.lu.se/record/3a17e604-c826-43d5-8cfa-35d57ed0cfe4 ; https://portal.research.lu.se/ws/files/83844540/Xianshao_Z_kappa.pdf

► As a solution to solving energy consumption and environment problems, photovoltaics has become one type of the promising devices to convert solar energy into electricity… (more)

▼ As a solution to solving energy consumption and environment problems, photovoltaics has become one type of the promising devices to convert solar energy into electricity directly. In some special areas like in space, a kind of photovoltaics with lightweight and reliable properties is needed to supply power. Therefore, photovoltaics based on the group III-V semiconductor nanowires has been emerged and developed nowadays. However, a large surface-to-volume ratio in nanowires leads to high-density surface traps and therefore could degrade the performance of photovoltaics. In general, the properties of applications are dominated by the behaviours of charge carriers in semiconductors. Therefore, it is important to understand all processes which are related to charge carriers in semiconductors. In this thesis, a series of surface passivation methods are applied to lower the density of trap states and consequently improve the lifetime of photogenerated charge carriers in group III-V bulk and nanowire materials. We show that the GaNAs and AlGaAs passivation layers help to lower the trap density at the GaAs surface. Similarly, we have investigated the AlyIn(1-y)P passivated GaxIn(1-x)P nanowires with a great potential for multi-junction photovoltaic applications. Concerning InP nanowires, we investigated why optimal HCl etching provides less surface defects. Although the density of surface defect in InP is lower than in GaAs, an insulating layer is still needed to isolate the active InP nanowires and the electrodes. In this respect, we demonstrated that an appropriate POx/Al2O3 capped layer works as a passivation and insulating layer. By means of several steady-state and time-resolved spectroscopies, such as time-resolved photoluminescence, transient absorption, and time-resolved terahertz spectroscopy, prospective passivation layers or conditions are screened for GaAs bulk, GaAs NW, InP NW, and GaInP NW materials. On the fundamental side, we find that charge trapping by several types of trap states dominates the primary steps of charge carrier dynamics and results in predominantly non-radiative recombination of photogenerated charges. Some trapping channels can be saturated via high charge generation rate under irradiation of the semiconductors by high intensity short optical pulses. Meanwhile, the atomic composition in ternary semiconductors, like Ga in GaxIn1−xP NWs plays a crucial role in the unexpected formation of deep traps. With the increase of Ga fraction, the fast electron trapping, hole trapping, and non-radiative recombination become more efficient.These spectrum studies in this thesis not only help us to select a potential passivation method for group III-V bulk and nanowires materials, but also reveal the carrier behaviour in these materials. Based on these understanding, several methods of characterization of the optoelectronic materials performance are derived.

Subjects/Keywords: Physical Chemistry; Time-resolved spectroscopy; Group III-V semiconductor; Nanowires; Carrier recombination; Trapping; Passivation

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APA (6^th Edition):

Zou, X. (2020). Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/3a17e604-c826-43d5-8cfa-35d57ed0cfe4 ; https://portal.research.lu.se/ws/files/83844540/Xianshao_Z_kappa.pdf

Chicago Manual of Style (16^th Edition):

Zou, Xianshao. “Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors.” 2020. Doctoral Dissertation, University of Lund. Accessed March 01, 2021. https://lup.lub.lu.se/record/3a17e604-c826-43d5-8cfa-35d57ed0cfe4 ; https://portal.research.lu.se/ws/files/83844540/Xianshao_Z_kappa.pdf.

MLA Handbook (7^th Edition):

Zou, Xianshao. “Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors.” 2020. Web. 01 Mar 2021.

Vancouver:

Zou X. Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors. [Internet] [Doctoral dissertation]. University of Lund; 2020. [cited 2021 Mar 01]. Available from: https://lup.lub.lu.se/record/3a17e604-c826-43d5-8cfa-35d57ed0cfe4 ; https://portal.research.lu.se/ws/files/83844540/Xianshao_Z_kappa.pdf.

Council of Science Editors:

Zou X. Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors. [Doctoral Dissertation]. University of Lund; 2020. Available from: https://lup.lub.lu.se/record/3a17e604-c826-43d5-8cfa-35d57ed0cfe4 ; https://portal.research.lu.se/ws/files/83844540/Xianshao_Z_kappa.pdf

ETH Zürich

28. Seifried, Marc. III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources.

Degree: 2018, ETH Zürich

URL: http://hdl.handle.net/20.500.11850/327330

► Data-rich applications, such as cloud computing, video streaming and social media fuel a growing demand for high-performance data centers. Their performance is based on interconnected… (more)

Subjects/Keywords: Silicon Photonics; III-V; Semiconductor Lasers; CMOS; info:eu-repo/classification/ddc/621.3; Electric engineering

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APA (6^th Edition):

Seifried, M. (2018). III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources. (Doctoral Dissertation). ETH Zürich. Retrieved from http://hdl.handle.net/20.500.11850/327330

Chicago Manual of Style (16^th Edition):

Seifried, Marc. “III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources.” 2018. Doctoral Dissertation, ETH Zürich. Accessed March 01, 2021. http://hdl.handle.net/20.500.11850/327330.

MLA Handbook (7^th Edition):

Seifried, Marc. “III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources.” 2018. Web. 01 Mar 2021.

Vancouver:

Seifried M. III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources. [Internet] [Doctoral dissertation]. ETH Zürich; 2018. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/20.500.11850/327330.

Council of Science Editors:

Seifried M. III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources. [Doctoral Dissertation]. ETH Zürich; 2018. Available from: http://hdl.handle.net/20.500.11850/327330

University of Texas – Austin

29. Ironside, Daniel Joseph. Embedded dielectric microstructures in molecular beam epitaxy : high-quality planar coalescence toward enhanced optoelectronic materials.

Degree: PhD, Electrical and Computer Engineering, 2018, University of Texas – Austin

URL: http://dx.doi.org/10.26153/tsw/2861

► Seamless integration of embedded dielectric microstructures in III-V crystal growth is a continued area of research due to its numerous high-impact applications. Historically, investigations into… (more)

▼ Seamless integration of embedded dielectric microstructures in III-V crystal growth is a continued area of research due to its numerous high-impact applications. Historically, investigations into embedded dielectric microstructures within existing crystal growth techniques were focused on blocking dislocations at the III-V/dielectric interface in the production of low defect relaxed high mismatched heteroepitaxy. However, recent efforts have broadened the use of embedded dielectric microstructures for enhancement of optoelectronic device functionality and development of monolithic growth schemes toward integrated photonic circuits. The central challenge of embedding dielectric microstructures in III-V materials is achieving single-crystal high-quality planar coalescence within existing conventional III-V crystal growth techniques without defect. While prevalent in the field of III-V crystal growth, solid-source Molecular Beam Epitaxy (MBE) has a well-known "coalescence problem," historically lacking approaches that achieve planar coalescence over dielectric microstructures. Limited coalescence is in large part due to low diffusion of III-adatoms on dielectric surfaces, typically below 300nm, readily forming polycrystalline deposition on dielectric surfaces exceeding this diffusion length. Several solid-source MBE highly-selective growth and lateral epitaxial overgrowth (LEO) growth approaches have been reported; however, none demonstrating complete planar coalescence over dielectric microstructures. In this dissertation, to overcome the "coalescence problem," we demonstrate for the first time a general methodology for an all-MBE growth of high-quality planar coalescence over a variety of embedded dielectric microstructures. Underpinning the approach, we developed a two-stage all-MBE growth approach for GaAs and InAs on (001) substrates, producing highly selective LEO and planarization, returning the growth front to the (001) surface. Characterization of the growth approach demonstrates for the first time an all-MBE approach to planar coalescence. In application of the two-stage all-MBE growth approach towards photonics, we demonstrate enhancement of quantum emitters using buried silica gratings arrays and develop several methodologies for embedded high-contrast photonic materials through self-formed air voids and molded air channel processes. Lastly, in application to high-quality relaxed high mismatch heteroepitaxy, we demonstrate for the first time an all-MBE approach to III-V metamorphic heteroepitaxy, demonstrating threading dislocation reduction in InAs/GaAs metamorphics with high fill factor embedded silica gratings. Thus, from the material presented here, we provide several significant advances to the long-standing challenge of marrying high-quality semiconductor crystal growth with dielectric microstructures, unlocking several high-impact applications, including high-quality material pathways for enhanced quantum emitters and embedded metasurfaces as well as an all-MBE approach toward… Advisors/Committee Members: Bank, Seth Robert (advisor), Wasserman, Daniel (committee member), Li, Xiaoqin (Elaine) (committee member), Yu, Edward T (committee member), Wang, Zheng (committee member).

Subjects/Keywords: Crystal growth; MBE; III-V; Semiconductor; LEO; Lateral growth; Photonics; Metamaterials; Metamorphics; High contrast; Emitter

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APA (6^th Edition):

Ironside, D. J. (2018). Embedded dielectric microstructures in molecular beam epitaxy : high-quality planar coalescence toward enhanced optoelectronic materials. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/2861

Chicago Manual of Style (16^th Edition):

Ironside, Daniel Joseph. “Embedded dielectric microstructures in molecular beam epitaxy : high-quality planar coalescence toward enhanced optoelectronic materials.” 2018. Doctoral Dissertation, University of Texas – Austin. Accessed March 01, 2021. http://dx.doi.org/10.26153/tsw/2861.

MLA Handbook (7^th Edition):

Ironside, Daniel Joseph. “Embedded dielectric microstructures in molecular beam epitaxy : high-quality planar coalescence toward enhanced optoelectronic materials.” 2018. Web. 01 Mar 2021.

Vancouver:

Ironside DJ. Embedded dielectric microstructures in molecular beam epitaxy : high-quality planar coalescence toward enhanced optoelectronic materials. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2018. [cited 2021 Mar 01]. Available from: http://dx.doi.org/10.26153/tsw/2861.

Council of Science Editors:

Ironside DJ. Embedded dielectric microstructures in molecular beam epitaxy : high-quality planar coalescence toward enhanced optoelectronic materials. [Doctoral Dissertation]. University of Texas – Austin; 2018. Available from: http://dx.doi.org/10.26153/tsw/2861

University of Lund

30. Anttu, Nicklas. Nanophotonics in absorbing III-V nanowire arrays.

Degree: 2013, University of Lund

URL: https://lup.lub.lu.se/record/3768636 ; https://portal.research.lu.se/ws/files/6151427/3768637.pdf

► We have studied the interaction of light with an array of vertically oriented III-V semiconductor nanowires both theoretically and experimentally. For the theoretical studies, electromagnetic… (more)

▼ We have studied the interaction of light with an array of vertically oriented III-V semiconductor nanowires both theoretically and experimentally. For the theoretical studies, electromagnetic modeling has been employed. This modeling shows that with proper tuning of the nanowire diameter, the absorption per volume semiconductor material can be 20 times higher in the nanowires than in a corresponding bulk semiconductor sample. This enhancement occurs when nanophotonic resonances show up in the nanowires. We have shown that the optical response of a nanowire array can be described by electrostatics for small-diameter nanowires and by geometrical optics for large-diameter nanowires. None of these two limit cases showed resonances, motivating the interest for the intermediate nanophotonic regime where the diameter of the nanowires is comparable to the wavelength of the incident light. Supported by theoretical analysis, we have shown experimentally a resonant photodetection response in an InAsSb nanowire array in the infrared region, which is of potential interest for thermal imaging and chemical analysis. Furthermore, we have demonstrated a solar cell based on InP nanowires. The nanowire-array solar cell showed an efficiency of 13.8 % and converted more than 70 % of the above-bandgap photons into electron-hole pairs that contributed to the short-circuit current, even though the nanowires covered only 12 % of the surface. By combining the electromagnetic modeling with reflectance measurements, we have developed an optical method for simultaneously measuring both the diameter and the length of nanowires in large-area arrays. The accuracy of the method is comparable to that of scanning electron microscopy. Furthermore, we have developed tools for studying the crystal-phase dependent optical response of III-V materials. The studies showed that a tuning of the crystal phase, which is possible in the nanowire geometry, can be used for enabling and disabling strongly absorbing nanophotonic resonances in nanowire arrays.

Subjects/Keywords: Condensed Matter Physics; III-V semiconductor materials; Nanophotonics; nanowires; electromagnetic modeling; Fysicumarkivet A:2013:Anttu

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APA (6^th Edition):

Anttu, N. (2013). Nanophotonics in absorbing III-V nanowire arrays. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/3768636 ; https://portal.research.lu.se/ws/files/6151427/3768637.pdf

Chicago Manual of Style (16^th Edition):

Anttu, Nicklas. “Nanophotonics in absorbing III-V nanowire arrays.” 2013. Doctoral Dissertation, University of Lund. Accessed March 01, 2021. https://lup.lub.lu.se/record/3768636 ; https://portal.research.lu.se/ws/files/6151427/3768637.pdf.

MLA Handbook (7^th Edition):

Anttu, Nicklas. “Nanophotonics in absorbing III-V nanowire arrays.” 2013. Web. 01 Mar 2021.

Vancouver:

Anttu N. Nanophotonics in absorbing III-V nanowire arrays. [Internet] [Doctoral dissertation]. University of Lund; 2013. [cited 2021 Mar 01]. Available from: https://lup.lub.lu.se/record/3768636 ; https://portal.research.lu.se/ws/files/6151427/3768637.pdf.

Council of Science Editors:

Anttu N. Nanophotonics in absorbing III-V nanowire arrays. [Doctoral Dissertation]. University of Lund; 2013. Available from: https://lup.lub.lu.se/record/3768636 ; https://portal.research.lu.se/ws/files/6151427/3768637.pdf

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