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You searched for subject:(III V Semiconductor Material). Showing records 1 – 30 of 20226 total matches.

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Rochester Institute of Technology

1. Nelson, George Thomas, IV. Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes.

Degree: PhD, Microsystems Engineering, 2019, Rochester Institute of Technology

  Photodiodes made of III-V materials are ubiquitous with applications for telecommunications, photonics, consumer electronics, and spectroscopy. The III-V solar cell, specifically, is a large-area… (more)

Subjects/Keywords: DLTS; III-V; Photodiode; Semiconductor; Solar cells

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APA (6th Edition):

Nelson, George Thomas, I. (2019). Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/10100

Chicago Manual of Style (16th Edition):

Nelson, George Thomas, IV. “Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes.” 2019. Doctoral Dissertation, Rochester Institute of Technology. Accessed March 01, 2021. https://scholarworks.rit.edu/theses/10100.

MLA Handbook (7th Edition):

Nelson, George Thomas, IV. “Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes.” 2019. Web. 01 Mar 2021.

Vancouver:

Nelson, George Thomas I. Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2019. [cited 2021 Mar 01]. Available from: https://scholarworks.rit.edu/theses/10100.

Council of Science Editors:

Nelson, George Thomas I. Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes. [Doctoral Dissertation]. Rochester Institute of Technology; 2019. Available from: https://scholarworks.rit.edu/theses/10100


University of Oregon

2. Greenaway, Ann. Close-Spaced Vapor Transport for III-V Solar Absorbing Devices.

Degree: PhD, Department of Chemistry and Biochemistry, 2018, University of Oregon

 Capture of the energy in sunlight relies mainly on the use of light-absorbing semiconductors, in solar cells and in water-splitting devices. While solar cell efficiency… (more)

Subjects/Keywords: III-V semiconductor; Low-cost; Photoelectrochemistry; Photovoltaics

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APA (6th Edition):

Greenaway, A. (2018). Close-Spaced Vapor Transport for III-V Solar Absorbing Devices. (Doctoral Dissertation). University of Oregon. Retrieved from http://hdl.handle.net/1794/23185

Chicago Manual of Style (16th Edition):

Greenaway, Ann. “Close-Spaced Vapor Transport for III-V Solar Absorbing Devices.” 2018. Doctoral Dissertation, University of Oregon. Accessed March 01, 2021. http://hdl.handle.net/1794/23185.

MLA Handbook (7th Edition):

Greenaway, Ann. “Close-Spaced Vapor Transport for III-V Solar Absorbing Devices.” 2018. Web. 01 Mar 2021.

Vancouver:

Greenaway A. Close-Spaced Vapor Transport for III-V Solar Absorbing Devices. [Internet] [Doctoral dissertation]. University of Oregon; 2018. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/1794/23185.

Council of Science Editors:

Greenaway A. Close-Spaced Vapor Transport for III-V Solar Absorbing Devices. [Doctoral Dissertation]. University of Oregon; 2018. Available from: http://hdl.handle.net/1794/23185


Queens University

3. McLaughlin, Dirk. Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells .

Degree: Mechanical and Materials Engineering, 2011, Queens University

 The semiconductor alloy indium gallium nitride (InxGa1-xN) offers substantial potential in the development of high-efficiency multi-junction photovoltaic devices due to its wide range of direct… (more)

Subjects/Keywords: Photovoltaics ; III-V Alloy ; Semiconductor Characterization

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APA (6th Edition):

McLaughlin, D. (2011). Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells . (Thesis). Queens University. Retrieved from http://hdl.handle.net/1974/6809

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

McLaughlin, Dirk. “Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells .” 2011. Thesis, Queens University. Accessed March 01, 2021. http://hdl.handle.net/1974/6809.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

McLaughlin, Dirk. “Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells .” 2011. Web. 01 Mar 2021.

Vancouver:

McLaughlin D. Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells . [Internet] [Thesis]. Queens University; 2011. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/1974/6809.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

McLaughlin D. Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells . [Thesis]. Queens University; 2011. Available from: http://hdl.handle.net/1974/6809

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Mallet, Nicolas. Développement d'architectures 3D à base de transistors MOS à canal nanofil III-V : Development of 3D architecture for MOS transistors based on III-V nanowires channel.

Degree: Docteur es, MicroNano Systèmes, 2019, Université Toulouse III – Paul Sabatier

Ce sujet de thèse s'inscrit dans la course à la miniaturisation des technologies CMOS, où l'apparition d'effets néfastes (canaux courts) sur le comportement électrique des… (more)

Subjects/Keywords: Semiconducteur; Transistor; MOS; III-V; Nanofil; Semiconductor; Transistor; MOS; III-V; Nanowire

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APA (6th Edition):

Mallet, N. (2019). Développement d'architectures 3D à base de transistors MOS à canal nanofil III-V : Development of 3D architecture for MOS transistors based on III-V nanowires channel. (Doctoral Dissertation). Université Toulouse III – Paul Sabatier. Retrieved from http://www.theses.fr/2019TOU30044

Chicago Manual of Style (16th Edition):

Mallet, Nicolas. “Développement d'architectures 3D à base de transistors MOS à canal nanofil III-V : Development of 3D architecture for MOS transistors based on III-V nanowires channel.” 2019. Doctoral Dissertation, Université Toulouse III – Paul Sabatier. Accessed March 01, 2021. http://www.theses.fr/2019TOU30044.

MLA Handbook (7th Edition):

Mallet, Nicolas. “Développement d'architectures 3D à base de transistors MOS à canal nanofil III-V : Development of 3D architecture for MOS transistors based on III-V nanowires channel.” 2019. Web. 01 Mar 2021.

Vancouver:

Mallet N. Développement d'architectures 3D à base de transistors MOS à canal nanofil III-V : Development of 3D architecture for MOS transistors based on III-V nanowires channel. [Internet] [Doctoral dissertation]. Université Toulouse III – Paul Sabatier; 2019. [cited 2021 Mar 01]. Available from: http://www.theses.fr/2019TOU30044.

Council of Science Editors:

Mallet N. Développement d'architectures 3D à base de transistors MOS à canal nanofil III-V : Development of 3D architecture for MOS transistors based on III-V nanowires channel. [Doctoral Dissertation]. Université Toulouse III – Paul Sabatier; 2019. Available from: http://www.theses.fr/2019TOU30044


Université de Sherbrooke

5. Ridaoui, Mohamed. Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince.

Degree: 2017, Université de Sherbrooke

 Abstract : Silicon-based devices dominate the semiconductor industry because of the low cost of this material, its technology availability and maturity. However, silicon has physical… (more)

Subjects/Keywords: Matériaux III-V (petit gap); MOSFETs; Ultra-thin body (UTB); Al2O3; Ni/III-V; Hyperfréquence; III-V material; MOSFETS; High frequency

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APA (6th Edition):

Ridaoui, M. (2017). Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince. (Doctoral Dissertation). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/11118

Chicago Manual of Style (16th Edition):

Ridaoui, Mohamed. “Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince.” 2017. Doctoral Dissertation, Université de Sherbrooke. Accessed March 01, 2021. http://hdl.handle.net/11143/11118.

MLA Handbook (7th Edition):

Ridaoui, Mohamed. “Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince.” 2017. Web. 01 Mar 2021.

Vancouver:

Ridaoui M. Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince. [Internet] [Doctoral dissertation]. Université de Sherbrooke; 2017. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/11143/11118.

Council of Science Editors:

Ridaoui M. Fabrication et caractérisation de MOSFET III-V à faible bande interdite et canal ultra mince. [Doctoral Dissertation]. Université de Sherbrooke; 2017. Available from: http://hdl.handle.net/11143/11118

6. Ye, Hao. Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices.

Degree: PhD, 2016, University of Oklahoma

 The interband cascade (IC) family of devices has been extended beyond mid-infrared lasers to include photovoltaic (PV) and photodetector (PD) devices. These devices utilize the… (more)

Subjects/Keywords: Molecular Beam Epitaxy; III-V Semiconductor Material; Laser; Detector

…even longer wavelengths. xviii Chapter 1 Introduction III-V semiconductor materials are… …III-V semiconductor materials usually crystallize in zinc-blende lattice, which consists of… …11 µm, which is the longest wavelength among interband lasers based on IIIV semiconductor… …in the AFM images. The substrate temperature (T), As2/In flux ratio (V/III… …follows: (a, d) Structure T2, T= 405˚C, V/III=11:1, RMS = 0.22 nm, and P-V = ~1.3 nm… 

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APA (6th Edition):

Ye, H. (2016). Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices. (Doctoral Dissertation). University of Oklahoma. Retrieved from http://hdl.handle.net/11244/34898

Chicago Manual of Style (16th Edition):

Ye, Hao. “Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices.” 2016. Doctoral Dissertation, University of Oklahoma. Accessed March 01, 2021. http://hdl.handle.net/11244/34898.

MLA Handbook (7th Edition):

Ye, Hao. “Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices.” 2016. Web. 01 Mar 2021.

Vancouver:

Ye H. Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices. [Internet] [Doctoral dissertation]. University of Oklahoma; 2016. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/11244/34898.

Council of Science Editors:

Ye H. Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices. [Doctoral Dissertation]. University of Oklahoma; 2016. Available from: http://hdl.handle.net/11244/34898


NSYSU

7. Chang, Wei-hau. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide.

Degree: Master, Electrical Engineering, 2013, NSYSU

 Due to the high electron mobility compard with Si, much attention has been focused on III-V compound semiconductors (gallium arsenide (GaAs) and indium phosphide (InP))… (more)

Subjects/Keywords: Characterization; Titanium Oxide; Silicon Oxide; III-V Compound Semiconductor; MOS Structures

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APA (6th Edition):

Chang, W. (2013). Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Wei-hau. “Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide.” 2013. Thesis, NSYSU. Accessed March 01, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Wei-hau. “Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide.” 2013. Web. 01 Mar 2021.

Vancouver:

Chang W. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide. [Internet] [Thesis]. NSYSU; 2013. [cited 2021 Mar 01]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang W. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Silicon Oxide Stacked Layers as Gate Oxide. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0617113-165539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

8. Asadolahi Baboli, Mohadeseh. Catalyst-free Heteroepitaxy of III-V Semiconductor Nanowires on Silicon, Graphene, and Molybdenum Disulfide.

Degree: PhD, Microsystems Engineering, 2020, Rochester Institute of Technology

  The research presented in this dissertation pioneered three novel nano-material systems, including vertically aligned InAlAs nanowires (NWs) on two-dimensional (2-D) graphene, InAs NWs on… (more)

Subjects/Keywords: Epitaxy; Graphene; III-V; Molybdenum disulfide; Nanowire; Semiconductor

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APA (6th Edition):

Asadolahi Baboli, M. (2020). Catalyst-free Heteroepitaxy of III-V Semiconductor Nanowires on Silicon, Graphene, and Molybdenum Disulfide. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/10528

Chicago Manual of Style (16th Edition):

Asadolahi Baboli, Mohadeseh. “Catalyst-free Heteroepitaxy of III-V Semiconductor Nanowires on Silicon, Graphene, and Molybdenum Disulfide.” 2020. Doctoral Dissertation, Rochester Institute of Technology. Accessed March 01, 2021. https://scholarworks.rit.edu/theses/10528.

MLA Handbook (7th Edition):

Asadolahi Baboli, Mohadeseh. “Catalyst-free Heteroepitaxy of III-V Semiconductor Nanowires on Silicon, Graphene, and Molybdenum Disulfide.” 2020. Web. 01 Mar 2021.

Vancouver:

Asadolahi Baboli M. Catalyst-free Heteroepitaxy of III-V Semiconductor Nanowires on Silicon, Graphene, and Molybdenum Disulfide. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2020. [cited 2021 Mar 01]. Available from: https://scholarworks.rit.edu/theses/10528.

Council of Science Editors:

Asadolahi Baboli M. Catalyst-free Heteroepitaxy of III-V Semiconductor Nanowires on Silicon, Graphene, and Molybdenum Disulfide. [Doctoral Dissertation]. Rochester Institute of Technology; 2020. Available from: https://scholarworks.rit.edu/theses/10528


Texas A&M University

9. Suh, Jae Woo. Device Design Parameterization of III-V Multi-Gate FETs.

Degree: PhD, Electrical Engineering, 2016, Texas A&M University

 The use of group III-V semiconductor materials promise superior performance compared to silicon and can be considered a fundamental paradigm shift away from mature silicon… (more)

Subjects/Keywords: GaN; FinFET; III-V; semiconductor; ohmic contact; strain; 2DEG

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APA (6th Edition):

Suh, J. W. (2016). Device Design Parameterization of III-V Multi-Gate FETs. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/159072

Chicago Manual of Style (16th Edition):

Suh, Jae Woo. “Device Design Parameterization of III-V Multi-Gate FETs.” 2016. Doctoral Dissertation, Texas A&M University. Accessed March 01, 2021. http://hdl.handle.net/1969.1/159072.

MLA Handbook (7th Edition):

Suh, Jae Woo. “Device Design Parameterization of III-V Multi-Gate FETs.” 2016. Web. 01 Mar 2021.

Vancouver:

Suh JW. Device Design Parameterization of III-V Multi-Gate FETs. [Internet] [Doctoral dissertation]. Texas A&M University; 2016. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/1969.1/159072.

Council of Science Editors:

Suh JW. Device Design Parameterization of III-V Multi-Gate FETs. [Doctoral Dissertation]. Texas A&M University; 2016. Available from: http://hdl.handle.net/1969.1/159072


McMaster University

10. Vukovic, Matthew. Design and Fabrication of InGaAsP Quantum-Well Semiconductor Optical Amplifiers for Integration with Silicon Photonics.

Degree: MASc, 2020, McMaster University

Silicon photonics provides an environmentally sustainable pathway to a more robust data infrastructure. To compensate for optical power losses, methods of amplification are required; specifically,… (more)

Subjects/Keywords: laser diode; silicon photonics; III-V; semiconductor optical amplifier; fabrication

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APA (6th Edition):

Vukovic, M. (2020). Design and Fabrication of InGaAsP Quantum-Well Semiconductor Optical Amplifiers for Integration with Silicon Photonics. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/25385

Chicago Manual of Style (16th Edition):

Vukovic, Matthew. “Design and Fabrication of InGaAsP Quantum-Well Semiconductor Optical Amplifiers for Integration with Silicon Photonics.” 2020. Masters Thesis, McMaster University. Accessed March 01, 2021. http://hdl.handle.net/11375/25385.

MLA Handbook (7th Edition):

Vukovic, Matthew. “Design and Fabrication of InGaAsP Quantum-Well Semiconductor Optical Amplifiers for Integration with Silicon Photonics.” 2020. Web. 01 Mar 2021.

Vancouver:

Vukovic M. Design and Fabrication of InGaAsP Quantum-Well Semiconductor Optical Amplifiers for Integration with Silicon Photonics. [Internet] [Masters thesis]. McMaster University; 2020. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/11375/25385.

Council of Science Editors:

Vukovic M. Design and Fabrication of InGaAsP Quantum-Well Semiconductor Optical Amplifiers for Integration with Silicon Photonics. [Masters Thesis]. McMaster University; 2020. Available from: http://hdl.handle.net/11375/25385

11. Awan, Kashif. Fabrication of III-V Integrated Photonic Devices .

Degree: 2018, University of Ottawa

 This doctoral dissertation focuses on fabrication processes for integrated photonic devices based on III-V semiconductors. This work covers a range of III-V materials and a… (more)

Subjects/Keywords: Integrated photonics; Nanofabrication; Nanophotonics; Semiconductor devices; Nonlinear optics; III-V materials

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APA (6th Edition):

Awan, K. (2018). Fabrication of III-V Integrated Photonic Devices . (Thesis). University of Ottawa. Retrieved from http://hdl.handle.net/10393/37729

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Awan, Kashif. “Fabrication of III-V Integrated Photonic Devices .” 2018. Thesis, University of Ottawa. Accessed March 01, 2021. http://hdl.handle.net/10393/37729.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Awan, Kashif. “Fabrication of III-V Integrated Photonic Devices .” 2018. Web. 01 Mar 2021.

Vancouver:

Awan K. Fabrication of III-V Integrated Photonic Devices . [Internet] [Thesis]. University of Ottawa; 2018. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/10393/37729.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Awan K. Fabrication of III-V Integrated Photonic Devices . [Thesis]. University of Ottawa; 2018. Available from: http://hdl.handle.net/10393/37729

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Toronto

12. Chen, Chao-Yang. Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions.

Degree: 2013, University of Toronto

The electrical properties of nanowire-based n-InSb-n-InAs heterojunctions grown by chemical beam epitaxy were investigated both theoretically and experimentally. This heterostructure presented a type-III band alignment… (more)

Subjects/Keywords: Nanowire; III-V semiconductor; Nanotechnology; Electron Beam Induced Current; 0794; 0611

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APA (6th Edition):

Chen, C. (2013). Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions. (Masters Thesis). University of Toronto. Retrieved from http://hdl.handle.net/1807/42727

Chicago Manual of Style (16th Edition):

Chen, Chao-Yang. “Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions.” 2013. Masters Thesis, University of Toronto. Accessed March 01, 2021. http://hdl.handle.net/1807/42727.

MLA Handbook (7th Edition):

Chen, Chao-Yang. “Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions.” 2013. Web. 01 Mar 2021.

Vancouver:

Chen C. Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions. [Internet] [Masters thesis]. University of Toronto; 2013. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/1807/42727.

Council of Science Editors:

Chen C. Electrical Properties and Band Diagram of InSb-InAs Nanowire Type-III Heterojunctions. [Masters Thesis]. University of Toronto; 2013. Available from: http://hdl.handle.net/1807/42727

13. Wang, Mingjin. Group III-V Nanowire Growth and Characterization.

Degree: 2016, University of California – eScholarship, University of California

 Electronic and optical devices typically use bulk or quantum wells today, but nanowires are promising building blocks for future devices, due to their structural characterizations… (more)

Subjects/Keywords: Materials Science; Electrical engineering; Group III-V Semiconductor Materials; Nanowire

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APA (6th Edition):

Wang, M. (2016). Group III-V Nanowire Growth and Characterization. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/1jx2h6q9

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Mingjin. “Group III-V Nanowire Growth and Characterization.” 2016. Thesis, University of California – eScholarship, University of California. Accessed March 01, 2021. http://www.escholarship.org/uc/item/1jx2h6q9.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Mingjin. “Group III-V Nanowire Growth and Characterization.” 2016. Web. 01 Mar 2021.

Vancouver:

Wang M. Group III-V Nanowire Growth and Characterization. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2021 Mar 01]. Available from: http://www.escholarship.org/uc/item/1jx2h6q9.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang M. Group III-V Nanowire Growth and Characterization. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/1jx2h6q9

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

14. Yu, Lan. Nanolithographically defined semiconductor quantum dots.

Degree: MS, Electrical & Computer Engr, 2015, University of Illinois – Urbana-Champaign

 In this thesis,nanolithographically de ned quantum dots are discussed including their fabrication process and optical properties. First, an introduction to the eld of quantum dots… (more)

Subjects/Keywords: III-V Semiconductor; Light-emitting diode (LED); Quantum dots

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APA (6th Edition):

Yu, L. (2015). Nanolithographically defined semiconductor quantum dots. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/78307

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yu, Lan. “Nanolithographically defined semiconductor quantum dots.” 2015. Thesis, University of Illinois – Urbana-Champaign. Accessed March 01, 2021. http://hdl.handle.net/2142/78307.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yu, Lan. “Nanolithographically defined semiconductor quantum dots.” 2015. Web. 01 Mar 2021.

Vancouver:

Yu L. Nanolithographically defined semiconductor quantum dots. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2015. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/2142/78307.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yu L. Nanolithographically defined semiconductor quantum dots. [Thesis]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/78307

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

15. Kim, Honggyu. Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection.

Degree: PhD, Materials Science & Engr, 2015, University of Illinois – Urbana-Champaign

 There are considerable interests in the use of infrared (IR) photodetectors, in particular mid- and long-wavelength IR detection, for diverse scientific, civil, and military applications.… (more)

Subjects/Keywords: III-V semiconductor; Superlattice; Scanning Transmission Electron Microscopy; Strain; Point defect

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APA (6th Edition):

Kim, H. (2015). Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/88210

Chicago Manual of Style (16th Edition):

Kim, Honggyu. “Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection.” 2015. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed March 01, 2021. http://hdl.handle.net/2142/88210.

MLA Handbook (7th Edition):

Kim, Honggyu. “Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection.” 2015. Web. 01 Mar 2021.

Vancouver:

Kim H. Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2015. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/2142/88210.

Council of Science Editors:

Kim H. Atomic structure and defects of III-V compound semiconductor strained-layer-superlattices for infrared detection. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/88210


University of Arizona

16. Zeng, Chao. Potential Environmental and Health Risks from Nanoparticles and III-V Materials Used in Semiconductor Manufacturing .

Degree: 2017, University of Arizona

 Nanoparticles (NPs) have unique electronic, optical and chemical properties due to the extreme small size. Engineered nanoparticles (ENPs) are intentionally produced for desired applications, with… (more)

Subjects/Keywords: CMP; ecotoxicity; engineered nanoparticles; III-V semiconductor materials; arsenic

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APA (6th Edition):

Zeng, C. (2017). Potential Environmental and Health Risks from Nanoparticles and III-V Materials Used in Semiconductor Manufacturing . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/623067

Chicago Manual of Style (16th Edition):

Zeng, Chao. “Potential Environmental and Health Risks from Nanoparticles and III-V Materials Used in Semiconductor Manufacturing .” 2017. Doctoral Dissertation, University of Arizona. Accessed March 01, 2021. http://hdl.handle.net/10150/623067.

MLA Handbook (7th Edition):

Zeng, Chao. “Potential Environmental and Health Risks from Nanoparticles and III-V Materials Used in Semiconductor Manufacturing .” 2017. Web. 01 Mar 2021.

Vancouver:

Zeng C. Potential Environmental and Health Risks from Nanoparticles and III-V Materials Used in Semiconductor Manufacturing . [Internet] [Doctoral dissertation]. University of Arizona; 2017. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/10150/623067.

Council of Science Editors:

Zeng C. Potential Environmental and Health Risks from Nanoparticles and III-V Materials Used in Semiconductor Manufacturing . [Doctoral Dissertation]. University of Arizona; 2017. Available from: http://hdl.handle.net/10150/623067


University of New South Wales

17. Zhang, Yi. Study on III-V materials for hot carrier solar cell absorbers.

Degree: Photovoltaics & Renewable Energy Engineering, 2017, University of New South Wales

 Hot carrier solar cell is an idea of third generation solar cells, which could boost the energy conversion efficiency greater than 60% at one sun… (more)

Subjects/Keywords: InGaN alloy; Hot carrier solar cell; III-V semiconductor; GaAs MQWs

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APA (6th Edition):

Zhang, Y. (2017). Study on III-V materials for hot carrier solar cell absorbers. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/57852 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:45012/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Zhang, Yi. “Study on III-V materials for hot carrier solar cell absorbers.” 2017. Doctoral Dissertation, University of New South Wales. Accessed March 01, 2021. http://handle.unsw.edu.au/1959.4/57852 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:45012/SOURCE02?view=true.

MLA Handbook (7th Edition):

Zhang, Yi. “Study on III-V materials for hot carrier solar cell absorbers.” 2017. Web. 01 Mar 2021.

Vancouver:

Zhang Y. Study on III-V materials for hot carrier solar cell absorbers. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2021 Mar 01]. Available from: http://handle.unsw.edu.au/1959.4/57852 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:45012/SOURCE02?view=true.

Council of Science Editors:

Zhang Y. Study on III-V materials for hot carrier solar cell absorbers. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/57852 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:45012/SOURCE02?view=true


Université de Grenoble

18. Maurice, Axel. Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects.

Degree: Docteur es, Nanophysique, 2013, Université de Grenoble

Depuis quelques années, les diodes électroluminescentes organiques (OLEDs) connaissent un véritable essor se traduisant par leur intégration progressive au sein d'appareils électroniques « grand public… (more)

Subjects/Keywords: Nano-objets; Semi-conducteur; III-V; Antimoniure d'indium; Phosphure d'indium; Nano-objects; Semiconductor; III-V; Indium antimonide; Indium phosphide; 530

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APA (6th Edition):

Maurice, A. (2013). Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2013GRENY064

Chicago Manual of Style (16th Edition):

Maurice, Axel. “Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects.” 2013. Doctoral Dissertation, Université de Grenoble. Accessed March 01, 2021. http://www.theses.fr/2013GRENY064.

MLA Handbook (7th Edition):

Maurice, Axel. “Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects.” 2013. Web. 01 Mar 2021.

Vancouver:

Maurice A. Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects. [Internet] [Doctoral dissertation]. Université de Grenoble; 2013. [cited 2021 Mar 01]. Available from: http://www.theses.fr/2013GRENY064.

Council of Science Editors:

Maurice A. Nano-objets semi-conducteurs III-V écocompatibles : Eco-friendly III-V semiconductor nano-objects. [Doctoral Dissertation]. Université de Grenoble; 2013. Available from: http://www.theses.fr/2013GRENY064


Universidade Estadual de Campinas

19. Princepe, Débora, 1989-. Optical gain medium incorporation into semiconductor optomechanical cavities : Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor: Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor.

Degree: 2018, Universidade Estadual de Campinas

 Abstract: Optomechanical and electromechanical systems based on III-V semiconductor materials have become a topic of high interest. Beyond the attractive material properties, this attention is… (more)

Subjects/Keywords: Laser de semicondutor; Optomecânica de cavidade; Semicondutores III-V; Nanofotônica; Semiconductor lasers; Cavity optomechanics; III-V Semiconductors; Nanophotonics

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APA (6th Edition):

Princepe, Débora, 1. (2018). Optical gain medium incorporation into semiconductor optomechanical cavities : Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor: Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor. (Thesis). Universidade Estadual de Campinas. Retrieved from http://repositorio.unicamp.br/jspui/handle/REPOSIP/331177

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Princepe, Débora, 1989-. “Optical gain medium incorporation into semiconductor optomechanical cavities : Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor: Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor.” 2018. Thesis, Universidade Estadual de Campinas. Accessed March 01, 2021. http://repositorio.unicamp.br/jspui/handle/REPOSIP/331177.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Princepe, Débora, 1989-. “Optical gain medium incorporation into semiconductor optomechanical cavities : Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor: Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor.” 2018. Web. 01 Mar 2021.

Vancouver:

Princepe, Débora 1. Optical gain medium incorporation into semiconductor optomechanical cavities : Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor: Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor. [Internet] [Thesis]. Universidade Estadual de Campinas; 2018. [cited 2021 Mar 01]. Available from: http://repositorio.unicamp.br/jspui/handle/REPOSIP/331177.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Princepe, Débora 1. Optical gain medium incorporation into semiconductor optomechanical cavities : Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor: Incorporação de meio de ganho óptico em cavidades optomecânicas de semicondutor. [Thesis]. Universidade Estadual de Campinas; 2018. Available from: http://repositorio.unicamp.br/jspui/handle/REPOSIP/331177

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Ferrah, Djawhar. Etude des propriétés physico-chimiques d'interfaces par photoémission : Abduction in first order logic with equality.

Degree: Docteur es, Matériaux, 2013, Ecully, Ecole centrale de Lyon

 L'objectif de cette thèse est d'étudier les propriétés physico-chimiques des surfaces et des interfaces des couches minces par spectroscopie de photoémission (XPS), diffraction des photoélectrons… (more)

Subjects/Keywords: Couches minces; Semiconducteur; Oxydes; Graphènes; XPS; XPD; III-V; Thin films; Semiconductor; Oxide; Graphene; XPS; XPD; III-V

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APA (6th Edition):

Ferrah, D. (2013). Etude des propriétés physico-chimiques d'interfaces par photoémission : Abduction in first order logic with equality. (Doctoral Dissertation). Ecully, Ecole centrale de Lyon. Retrieved from http://www.theses.fr/2013ECDL0048

Chicago Manual of Style (16th Edition):

Ferrah, Djawhar. “Etude des propriétés physico-chimiques d'interfaces par photoémission : Abduction in first order logic with equality.” 2013. Doctoral Dissertation, Ecully, Ecole centrale de Lyon. Accessed March 01, 2021. http://www.theses.fr/2013ECDL0048.

MLA Handbook (7th Edition):

Ferrah, Djawhar. “Etude des propriétés physico-chimiques d'interfaces par photoémission : Abduction in first order logic with equality.” 2013. Web. 01 Mar 2021.

Vancouver:

Ferrah D. Etude des propriétés physico-chimiques d'interfaces par photoémission : Abduction in first order logic with equality. [Internet] [Doctoral dissertation]. Ecully, Ecole centrale de Lyon; 2013. [cited 2021 Mar 01]. Available from: http://www.theses.fr/2013ECDL0048.

Council of Science Editors:

Ferrah D. Etude des propriétés physico-chimiques d'interfaces par photoémission : Abduction in first order logic with equality. [Doctoral Dissertation]. Ecully, Ecole centrale de Lyon; 2013. Available from: http://www.theses.fr/2013ECDL0048

21. Williams, Howard R. Compound semiconductor material manufacture, process improvement.

Degree: PhD, 2002, University of South Wales

 IQE (Europe) Ltd. manufactures group III/V compound semiconductor material structures, using the Metal Organic Vapour Phase Epitaxy process. The manufactured ranges of semi-conducting materials are… (more)

Subjects/Keywords: 621.3815; Manufacturing processes; Compound semiconductor materials; Metal Organic Vapour Phase Epitaxy; MOVPE; Group III/V compound semiconductor material structures

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APA (6th Edition):

Williams, H. R. (2002). Compound semiconductor material manufacture, process improvement. (Doctoral Dissertation). University of South Wales. Retrieved from https://pure.southwales.ac.uk/en/studentthesis/compound-semiconductor-material-manufacture-process-improvement(d0373158-08d9-4332-9278-f5353203dcd0).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.749655

Chicago Manual of Style (16th Edition):

Williams, Howard R. “Compound semiconductor material manufacture, process improvement.” 2002. Doctoral Dissertation, University of South Wales. Accessed March 01, 2021. https://pure.southwales.ac.uk/en/studentthesis/compound-semiconductor-material-manufacture-process-improvement(d0373158-08d9-4332-9278-f5353203dcd0).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.749655.

MLA Handbook (7th Edition):

Williams, Howard R. “Compound semiconductor material manufacture, process improvement.” 2002. Web. 01 Mar 2021.

Vancouver:

Williams HR. Compound semiconductor material manufacture, process improvement. [Internet] [Doctoral dissertation]. University of South Wales; 2002. [cited 2021 Mar 01]. Available from: https://pure.southwales.ac.uk/en/studentthesis/compound-semiconductor-material-manufacture-process-improvement(d0373158-08d9-4332-9278-f5353203dcd0).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.749655.

Council of Science Editors:

Williams HR. Compound semiconductor material manufacture, process improvement. [Doctoral Dissertation]. University of South Wales; 2002. Available from: https://pure.southwales.ac.uk/en/studentthesis/compound-semiconductor-material-manufacture-process-improvement(d0373158-08d9-4332-9278-f5353203dcd0).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.749655


NSYSU

22. Chen, Hao. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides.

Degree: Master, Electrical Engineering, 2014, NSYSU

 Due to the high electron mobility compared with Si, much attention has been focused on III-V compound semiconductors (gallium arsenide (GaAs), indium phosphide (InP), indium… (more)

Subjects/Keywords: Aluminum Oxide; Titanium Oxide; III-V Compound Semiconductor; MOS Structures; (NH4)2S treatment

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APA (6th Edition):

Chen, H. (2014). Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726114-150937

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Hao. “Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides.” 2014. Thesis, NSYSU. Accessed March 01, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726114-150937.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Hao. “Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides.” 2014. Web. 01 Mar 2021.

Vancouver:

Chen H. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides. [Internet] [Thesis]. NSYSU; 2014. [cited 2021 Mar 01]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726114-150937.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen H. Characterization of III-V Compound Semiconductor MOSFETs with Titanium Oxide and Aluminum Oxide Stacked Layers as Gate Oxides. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726114-150937

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

23. Lin, Andrew. Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices.

Degree: Electrical Engineering, 2015, UCLA

 Extensive research efforts have been devoted to the study and development of III-V compound semiconductor nanowires (NWs) and nanopillars (NPs) because of their unique physical… (more)

Subjects/Keywords: Electrical engineering; Materials Science; Heterostructures; III-V semiconductor; Nanopillar; Nanowire; Surface states; Transistors

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APA (6th Edition):

Lin, A. (2015). Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/3m84h18t

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Andrew. “Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices.” 2015. Thesis, UCLA. Accessed March 01, 2021. http://www.escholarship.org/uc/item/3m84h18t.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Andrew. “Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices.” 2015. Web. 01 Mar 2021.

Vancouver:

Lin A. Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices. [Internet] [Thesis]. UCLA; 2015. [cited 2021 Mar 01]. Available from: http://www.escholarship.org/uc/item/3m84h18t.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin A. Investigating the growth, structural, and electrical properties of III-V semiconductor nanopillars for the next-generation electronic and optoelectronic devices. [Thesis]. UCLA; 2015. Available from: http://www.escholarship.org/uc/item/3m84h18t

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

24. Ramachandran, Vishwanath. Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

 Single-event mechanisms in InAlSb/InAs/AlGaSb high electron mobility transistors (HEMTs) are identified and investigated. Single-event transients are characterized using broadbeam and microbeam experiments along with 2-D… (more)

Subjects/Keywords: High Electron Mobility Transistor; HEMT; single-event effects; radiation effects; III-V; compound semiconductor

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APA (6th Edition):

Ramachandran, V. (2013). Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/10512

Chicago Manual of Style (16th Edition):

Ramachandran, Vishwanath. “Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed March 01, 2021. http://hdl.handle.net/1803/10512.

MLA Handbook (7th Edition):

Ramachandran, Vishwanath. “Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors.” 2013. Web. 01 Mar 2021.

Vancouver:

Ramachandran V. Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/1803/10512.

Council of Science Editors:

Ramachandran V. Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://hdl.handle.net/1803/10512


McMaster University

25. Tajik, Nooshin. Sulfur Passivation of III-V Semiconductor Nanowires.

Degree: PhD, 2013, McMaster University

An ammonium polysulfide (NH4)2Sx solution was optimized through a series of experiments to be used for surface passivation of III-V nanowires . The effectiveness… (more)

Subjects/Keywords: Nanowire; Passivation; III-V semiconductor; Sulfur; Photoluminescence; Solar Cell; Engineering Physics; Engineering Physics

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APA (6th Edition):

Tajik, N. (2013). Sulfur Passivation of III-V Semiconductor Nanowires. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/12834

Chicago Manual of Style (16th Edition):

Tajik, Nooshin. “Sulfur Passivation of III-V Semiconductor Nanowires.” 2013. Doctoral Dissertation, McMaster University. Accessed March 01, 2021. http://hdl.handle.net/11375/12834.

MLA Handbook (7th Edition):

Tajik, Nooshin. “Sulfur Passivation of III-V Semiconductor Nanowires.” 2013. Web. 01 Mar 2021.

Vancouver:

Tajik N. Sulfur Passivation of III-V Semiconductor Nanowires. [Internet] [Doctoral dissertation]. McMaster University; 2013. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/11375/12834.

Council of Science Editors:

Tajik N. Sulfur Passivation of III-V Semiconductor Nanowires. [Doctoral Dissertation]. McMaster University; 2013. Available from: http://hdl.handle.net/11375/12834


Texas A&M University

26. Wood, Matthew R. Order and Disorder in Type–II InAs/InAsSb Superlattices.

Degree: PhD, Applied Physics, 2017, Texas A&M University

 We employ cross–sectional scanning tunneling microscopy (STM) to examine how an as–grown InAs/InAsSb superlattice differs from the intended one as regards translational invariance in (001)… (more)

Subjects/Keywords: Cross–Sectional Scanning; Tunneling Microscopy; III–V; Semiconductor; Superlattice; Alloy Order; Interface Roughness

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APA (6th Edition):

Wood, M. R. (2017). Order and Disorder in Type–II InAs/InAsSb Superlattices. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/173176

Chicago Manual of Style (16th Edition):

Wood, Matthew R. “Order and Disorder in Type–II InAs/InAsSb Superlattices.” 2017. Doctoral Dissertation, Texas A&M University. Accessed March 01, 2021. http://hdl.handle.net/1969.1/173176.

MLA Handbook (7th Edition):

Wood, Matthew R. “Order and Disorder in Type–II InAs/InAsSb Superlattices.” 2017. Web. 01 Mar 2021.

Vancouver:

Wood MR. Order and Disorder in Type–II InAs/InAsSb Superlattices. [Internet] [Doctoral dissertation]. Texas A&M University; 2017. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/1969.1/173176.

Council of Science Editors:

Wood MR. Order and Disorder in Type–II InAs/InAsSb Superlattices. [Doctoral Dissertation]. Texas A&M University; 2017. Available from: http://hdl.handle.net/1969.1/173176


University of Lund

27. Zou, Xianshao. Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors.

Degree: 2020, University of Lund

 As a solution to solving energy consumption and environment problems, photovoltaics has become one type of the promising devices to convert solar energy into electricity… (more)

Subjects/Keywords: Physical Chemistry; Time-resolved spectroscopy; Group III-V semiconductor; Nanowires; Carrier recombination; Trapping; Passivation

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APA (6th Edition):

Zou, X. (2020). Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/3a17e604-c826-43d5-8cfa-35d57ed0cfe4 ; https://portal.research.lu.se/ws/files/83844540/Xianshao_Z_kappa.pdf

Chicago Manual of Style (16th Edition):

Zou, Xianshao. “Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors.” 2020. Doctoral Dissertation, University of Lund. Accessed March 01, 2021. https://lup.lub.lu.se/record/3a17e604-c826-43d5-8cfa-35d57ed0cfe4 ; https://portal.research.lu.se/ws/files/83844540/Xianshao_Z_kappa.pdf.

MLA Handbook (7th Edition):

Zou, Xianshao. “Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors.” 2020. Web. 01 Mar 2021.

Vancouver:

Zou X. Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors. [Internet] [Doctoral dissertation]. University of Lund; 2020. [cited 2021 Mar 01]. Available from: https://lup.lub.lu.se/record/3a17e604-c826-43d5-8cfa-35d57ed0cfe4 ; https://portal.research.lu.se/ws/files/83844540/Xianshao_Z_kappa.pdf.

Council of Science Editors:

Zou X. Dynamics of Photogenerated Charge Carriers in III-V Bulk and Nanowire Semiconductors. [Doctoral Dissertation]. University of Lund; 2020. Available from: https://lup.lub.lu.se/record/3a17e604-c826-43d5-8cfa-35d57ed0cfe4 ; https://portal.research.lu.se/ws/files/83844540/Xianshao_Z_kappa.pdf


ETH Zürich

28. Seifried, Marc. III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources.

Degree: 2018, ETH Zürich

 Data-rich applications, such as cloud computing, video streaming and social media fuel a growing demand for high-performance data centers. Their performance is based on interconnected… (more)

Subjects/Keywords: Silicon Photonics; III-V; Semiconductor Lasers; CMOS; info:eu-repo/classification/ddc/621.3; Electric engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Seifried, M. (2018). III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources. (Doctoral Dissertation). ETH Zürich. Retrieved from http://hdl.handle.net/20.500.11850/327330

Chicago Manual of Style (16th Edition):

Seifried, Marc. “III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources.” 2018. Doctoral Dissertation, ETH Zürich. Accessed March 01, 2021. http://hdl.handle.net/20.500.11850/327330.

MLA Handbook (7th Edition):

Seifried, Marc. “III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources.” 2018. Web. 01 Mar 2021.

Vancouver:

Seifried M. III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources. [Internet] [Doctoral dissertation]. ETH Zürich; 2018. [cited 2021 Mar 01]. Available from: http://hdl.handle.net/20.500.11850/327330.

Council of Science Editors:

Seifried M. III-V on Silicon Photonics for CMOS-Embedded On-Chip Light Sources. [Doctoral Dissertation]. ETH Zürich; 2018. Available from: http://hdl.handle.net/20.500.11850/327330


University of Texas – Austin

29. Ironside, Daniel Joseph. Embedded dielectric microstructures in molecular beam epitaxy : high-quality planar coalescence toward enhanced optoelectronic materials.

Degree: PhD, Electrical and Computer Engineering, 2018, University of Texas – Austin

 Seamless integration of embedded dielectric microstructures in III-V crystal growth is a continued area of research due to its numerous high-impact applications. Historically, investigations into… (more)

Subjects/Keywords: Crystal growth; MBE; III-V; Semiconductor; LEO; Lateral growth; Photonics; Metamaterials; Metamorphics; High contrast; Emitter

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ironside, D. J. (2018). Embedded dielectric microstructures in molecular beam epitaxy : high-quality planar coalescence toward enhanced optoelectronic materials. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/2861

Chicago Manual of Style (16th Edition):

Ironside, Daniel Joseph. “Embedded dielectric microstructures in molecular beam epitaxy : high-quality planar coalescence toward enhanced optoelectronic materials.” 2018. Doctoral Dissertation, University of Texas – Austin. Accessed March 01, 2021. http://dx.doi.org/10.26153/tsw/2861.

MLA Handbook (7th Edition):

Ironside, Daniel Joseph. “Embedded dielectric microstructures in molecular beam epitaxy : high-quality planar coalescence toward enhanced optoelectronic materials.” 2018. Web. 01 Mar 2021.

Vancouver:

Ironside DJ. Embedded dielectric microstructures in molecular beam epitaxy : high-quality planar coalescence toward enhanced optoelectronic materials. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2018. [cited 2021 Mar 01]. Available from: http://dx.doi.org/10.26153/tsw/2861.

Council of Science Editors:

Ironside DJ. Embedded dielectric microstructures in molecular beam epitaxy : high-quality planar coalescence toward enhanced optoelectronic materials. [Doctoral Dissertation]. University of Texas – Austin; 2018. Available from: http://dx.doi.org/10.26153/tsw/2861


University of Lund

30. Anttu, Nicklas. Nanophotonics in absorbing III-V nanowire arrays.

Degree: 2013, University of Lund

 We have studied the interaction of light with an array of vertically oriented III-V semiconductor nanowires both theoretically and experimentally. For the theoretical studies, electromagnetic… (more)

Subjects/Keywords: Condensed Matter Physics; III-V semiconductor materials; Nanophotonics; nanowires; electromagnetic modeling; Fysicumarkivet A:2013:Anttu

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Anttu, N. (2013). Nanophotonics in absorbing III-V nanowire arrays. (Doctoral Dissertation). University of Lund. Retrieved from https://lup.lub.lu.se/record/3768636 ; https://portal.research.lu.se/ws/files/6151427/3768637.pdf

Chicago Manual of Style (16th Edition):

Anttu, Nicklas. “Nanophotonics in absorbing III-V nanowire arrays.” 2013. Doctoral Dissertation, University of Lund. Accessed March 01, 2021. https://lup.lub.lu.se/record/3768636 ; https://portal.research.lu.se/ws/files/6151427/3768637.pdf.

MLA Handbook (7th Edition):

Anttu, Nicklas. “Nanophotonics in absorbing III-V nanowire arrays.” 2013. Web. 01 Mar 2021.

Vancouver:

Anttu N. Nanophotonics in absorbing III-V nanowire arrays. [Internet] [Doctoral dissertation]. University of Lund; 2013. [cited 2021 Mar 01]. Available from: https://lup.lub.lu.se/record/3768636 ; https://portal.research.lu.se/ws/files/6151427/3768637.pdf.

Council of Science Editors:

Anttu N. Nanophotonics in absorbing III-V nanowire arrays. [Doctoral Dissertation]. University of Lund; 2013. Available from: https://lup.lub.lu.se/record/3768636 ; https://portal.research.lu.se/ws/files/6151427/3768637.pdf

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