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You searched for subject:(IGZO). Showing records 1 – 30 of 42 total matches.

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1. Ueoka, Yoshihiro. Analysis of Electronic Structure on Amorphous Indium-Gallium-Zinc-Oxide for Flexible Printed Display : フレキシブル・プリントディスプレイにむけた非晶質酸化インジウム・ガリウム・亜鉛の電子構造解析; フレキシブル プリント ディスプレイ ニ ムケタ ヒショウシツ サンカ インジウム ガリウム アエン ノ デンシ コウゾウ カイセキ.

Degree: 博士(工学), Nara Institute of Science and Technology / 奈良先端科学技術大学院大学

Subjects/Keywords: IGZO

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APA (6th Edition):

Ueoka, Y. (n.d.). Analysis of Electronic Structure on Amorphous Indium-Gallium-Zinc-Oxide for Flexible Printed Display : フレキシブル・プリントディスプレイにむけた非晶質酸化インジウム・ガリウム・亜鉛の電子構造解析; フレキシブル プリント ディスプレイ ニ ムケタ ヒショウシツ サンカ インジウム ガリウム アエン ノ デンシ コウゾウ カイセキ. (Thesis). Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10061/9312

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ueoka, Yoshihiro. “Analysis of Electronic Structure on Amorphous Indium-Gallium-Zinc-Oxide for Flexible Printed Display : フレキシブル・プリントディスプレイにむけた非晶質酸化インジウム・ガリウム・亜鉛の電子構造解析; フレキシブル プリント ディスプレイ ニ ムケタ ヒショウシツ サンカ インジウム ガリウム アエン ノ デンシ コウゾウ カイセキ.” Thesis, Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Accessed May 20, 2019. http://hdl.handle.net/10061/9312.

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ueoka, Yoshihiro. “Analysis of Electronic Structure on Amorphous Indium-Gallium-Zinc-Oxide for Flexible Printed Display : フレキシブル・プリントディスプレイにむけた非晶質酸化インジウム・ガリウム・亜鉛の電子構造解析; フレキシブル プリント ディスプレイ ニ ムケタ ヒショウシツ サンカ インジウム ガリウム アエン ノ デンシ コウゾウ カイセキ.” Web. 20 May 2019.

Note: this citation may be lacking information needed for this citation format:
No year of publication.

Vancouver:

Ueoka Y. Analysis of Electronic Structure on Amorphous Indium-Gallium-Zinc-Oxide for Flexible Printed Display : フレキシブル・プリントディスプレイにむけた非晶質酸化インジウム・ガリウム・亜鉛の電子構造解析; フレキシブル プリント ディスプレイ ニ ムケタ ヒショウシツ サンカ インジウム ガリウム アエン ノ デンシ コウゾウ カイセキ. [Internet] [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; [cited 2019 May 20]. Available from: http://hdl.handle.net/10061/9312.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Council of Science Editors:

Ueoka Y. Analysis of Electronic Structure on Amorphous Indium-Gallium-Zinc-Oxide for Flexible Printed Display : フレキシブル・プリントディスプレイにむけた非晶質酸化インジウム・ガリウム・亜鉛の電子構造解析; フレキシブル プリント ディスプレイ ニ ムケタ ヒショウシツ サンカ インジウム ガリウム アエン ノ デンシ コウゾウ カイセキ. [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; Available from: http://hdl.handle.net/10061/9312

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.


Cornell University

2. Chung, Chen-Yang. High Mobility Of Sputtered In2Ga2Zno7 (Igzo) Thin Film Transistors (Tfts) .

Degree: 2016, Cornell University

 Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics. In addition to amorphous IGZO, a partially crystallized form… (more)

Subjects/Keywords: IGZO; TFT; laser

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APA (6th Edition):

Chung, C. (2016). High Mobility Of Sputtered In2Ga2Zno7 (Igzo) Thin Film Transistors (Tfts) . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/44274

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chung, Chen-Yang. “High Mobility Of Sputtered In2Ga2Zno7 (Igzo) Thin Film Transistors (Tfts) .” 2016. Thesis, Cornell University. Accessed May 20, 2019. http://hdl.handle.net/1813/44274.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chung, Chen-Yang. “High Mobility Of Sputtered In2Ga2Zno7 (Igzo) Thin Film Transistors (Tfts) .” 2016. Web. 20 May 2019.

Vancouver:

Chung C. High Mobility Of Sputtered In2Ga2Zno7 (Igzo) Thin Film Transistors (Tfts) . [Internet] [Thesis]. Cornell University; 2016. [cited 2019 May 20]. Available from: http://hdl.handle.net/1813/44274.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chung C. High Mobility Of Sputtered In2Ga2Zno7 (Igzo) Thin Film Transistors (Tfts) . [Thesis]. Cornell University; 2016. Available from: http://hdl.handle.net/1813/44274

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

3. Hoshino, Ken. Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs.

Degree: PhD, Electrical and Computer Engineering, 2012, Oregon State University

 Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment.… (more)

Subjects/Keywords: IGZO; Thin film transistors

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APA (6th Edition):

Hoshino, K. (2012). Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/30110

Chicago Manual of Style (16th Edition):

Hoshino, Ken. “Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs.” 2012. Doctoral Dissertation, Oregon State University. Accessed May 20, 2019. http://hdl.handle.net/1957/30110.

MLA Handbook (7th Edition):

Hoshino, Ken. “Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs.” 2012. Web. 20 May 2019.

Vancouver:

Hoshino K. Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs. [Internet] [Doctoral dissertation]. Oregon State University; 2012. [cited 2019 May 20]. Available from: http://hdl.handle.net/1957/30110.

Council of Science Editors:

Hoshino K. Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs. [Doctoral Dissertation]. Oregon State University; 2012. Available from: http://hdl.handle.net/1957/30110


Oregon State University

4. Hoshino, Ken. Instability and temperature-dependence assessment of IGZO TFTs.

Degree: MS, Electrical and Computer Engineering, 2008, Oregon State University

 Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under… (more)

Subjects/Keywords: IGZO; Thin film transistors

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APA (6th Edition):

Hoshino, K. (2008). Instability and temperature-dependence assessment of IGZO TFTs. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/9726

Chicago Manual of Style (16th Edition):

Hoshino, Ken. “Instability and temperature-dependence assessment of IGZO TFTs.” 2008. Masters Thesis, Oregon State University. Accessed May 20, 2019. http://hdl.handle.net/1957/9726.

MLA Handbook (7th Edition):

Hoshino, Ken. “Instability and temperature-dependence assessment of IGZO TFTs.” 2008. Web. 20 May 2019.

Vancouver:

Hoshino K. Instability and temperature-dependence assessment of IGZO TFTs. [Internet] [Masters thesis]. Oregon State University; 2008. [cited 2019 May 20]. Available from: http://hdl.handle.net/1957/9726.

Council of Science Editors:

Hoshino K. Instability and temperature-dependence assessment of IGZO TFTs. [Masters Thesis]. Oregon State University; 2008. Available from: http://hdl.handle.net/1957/9726


Rochester Institute of Technology

5. Suresh Bharadwaj, Anish. On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors.

Degree: MS, Microelectronic Engineering, 2018, Rochester Institute of Technology

  The role of amorphous IGZO (Indium Gallium Zinc Oxide) in Thin Film Transistors (TFT) has found its application in emerging display technologies such as… (more)

Subjects/Keywords: Bias stress; IGZO; TFT

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APA (6th Edition):

Suresh Bharadwaj, A. (2018). On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/9962

Chicago Manual of Style (16th Edition):

Suresh Bharadwaj, Anish. “On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors.” 2018. Masters Thesis, Rochester Institute of Technology. Accessed May 20, 2019. https://scholarworks.rit.edu/theses/9962.

MLA Handbook (7th Edition):

Suresh Bharadwaj, Anish. “On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors.” 2018. Web. 20 May 2019.

Vancouver:

Suresh Bharadwaj A. On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors. [Internet] [Masters thesis]. Rochester Institute of Technology; 2018. [cited 2019 May 20]. Available from: https://scholarworks.rit.edu/theses/9962.

Council of Science Editors:

Suresh Bharadwaj A. On the Reversible Effects of Bias-Stress Applied to Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors. [Masters Thesis]. Rochester Institute of Technology; 2018. Available from: https://scholarworks.rit.edu/theses/9962


University of Manchester

6. Zhang, Jiawei. Oxide-Semiconductor-Based Thin-Film Electronic Devices.

Degree: 2016, University of Manchester

 Oxide semiconductors have been envisaged to find applications in ubiquitous flexible electronics in daily life such as wearable electronic gadgets to offer novel user experiences.… (more)

Subjects/Keywords: oxide semiconductor; IGZO; SnO; Schottky diode; TFT

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APA (6th Edition):

Zhang, J. (2016). Oxide-Semiconductor-Based Thin-Film Electronic Devices. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:301695

Chicago Manual of Style (16th Edition):

Zhang, Jiawei. “Oxide-Semiconductor-Based Thin-Film Electronic Devices.” 2016. Doctoral Dissertation, University of Manchester. Accessed May 20, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:301695.

MLA Handbook (7th Edition):

Zhang, Jiawei. “Oxide-Semiconductor-Based Thin-Film Electronic Devices.” 2016. Web. 20 May 2019.

Vancouver:

Zhang J. Oxide-Semiconductor-Based Thin-Film Electronic Devices. [Internet] [Doctoral dissertation]. University of Manchester; 2016. [cited 2019 May 20]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:301695.

Council of Science Editors:

Zhang J. Oxide-Semiconductor-Based Thin-Film Electronic Devices. [Doctoral Dissertation]. University of Manchester; 2016. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:301695


University of Manchester

7. Zhang, Jiawei. Oxide-semiconductor-based thin-film electronic devices.

Degree: PhD, 2016, University of Manchester

 Oxide semiconductors have been envisaged to find applications in ubiquitous flexible electronics in daily life such as wearable electronic gadgets to offer novel user experiences.… (more)

Subjects/Keywords: TFT; SnO; Schottky diode; oxide semiconductor; IGZO

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APA (6th Edition):

Zhang, J. (2016). Oxide-semiconductor-based thin-film electronic devices. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/oxidesemiconductorbased-thinfilm-electronic-devices(c8cde776-b68b-47b5-ab63-382a86dbb94b).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.748013

Chicago Manual of Style (16th Edition):

Zhang, Jiawei. “Oxide-semiconductor-based thin-film electronic devices.” 2016. Doctoral Dissertation, University of Manchester. Accessed May 20, 2019. https://www.research.manchester.ac.uk/portal/en/theses/oxidesemiconductorbased-thinfilm-electronic-devices(c8cde776-b68b-47b5-ab63-382a86dbb94b).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.748013.

MLA Handbook (7th Edition):

Zhang, Jiawei. “Oxide-semiconductor-based thin-film electronic devices.” 2016. Web. 20 May 2019.

Vancouver:

Zhang J. Oxide-semiconductor-based thin-film electronic devices. [Internet] [Doctoral dissertation]. University of Manchester; 2016. [cited 2019 May 20]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/oxidesemiconductorbased-thinfilm-electronic-devices(c8cde776-b68b-47b5-ab63-382a86dbb94b).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.748013.

Council of Science Editors:

Zhang J. Oxide-semiconductor-based thin-film electronic devices. [Doctoral Dissertation]. University of Manchester; 2016. Available from: https://www.research.manchester.ac.uk/portal/en/theses/oxidesemiconductorbased-thinfilm-electronic-devices(c8cde776-b68b-47b5-ab63-382a86dbb94b).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.748013


Cornell University

8. Chung, Chen-Yang. Influence Of Water Vapor Activity During Thermal Annealing Of Sputtered Igzo Tft Devices .

Degree: 2013, Cornell University

 Thermal annealing of sputtered InGaZnO4 thin films was studied as a function of annealing ambients under controlled partial pressures of oxygen and water vapor. Water… (more)

Subjects/Keywords: IGZO; TFT; device; anneal; water vapor

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APA (6th Edition):

Chung, C. (2013). Influence Of Water Vapor Activity During Thermal Annealing Of Sputtered Igzo Tft Devices . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/34209

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chung, Chen-Yang. “Influence Of Water Vapor Activity During Thermal Annealing Of Sputtered Igzo Tft Devices .” 2013. Thesis, Cornell University. Accessed May 20, 2019. http://hdl.handle.net/1813/34209.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chung, Chen-Yang. “Influence Of Water Vapor Activity During Thermal Annealing Of Sputtered Igzo Tft Devices .” 2013. Web. 20 May 2019.

Vancouver:

Chung C. Influence Of Water Vapor Activity During Thermal Annealing Of Sputtered Igzo Tft Devices . [Internet] [Thesis]. Cornell University; 2013. [cited 2019 May 20]. Available from: http://hdl.handle.net/1813/34209.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chung C. Influence Of Water Vapor Activity During Thermal Annealing Of Sputtered Igzo Tft Devices . [Thesis]. Cornell University; 2013. Available from: http://hdl.handle.net/1813/34209

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

9. Roach, Kathryn. Millisecond Crystallization Kinetics Of Ingao3(Zno)M .

Degree: 2016, Cornell University

Subjects/Keywords: IGZO; crystallization kinetics

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APA (6th Edition):

Roach, K. (2016). Millisecond Crystallization Kinetics Of Ingao3(Zno)M . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/45243

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Roach, Kathryn. “Millisecond Crystallization Kinetics Of Ingao3(Zno)M .” 2016. Thesis, Cornell University. Accessed May 20, 2019. http://hdl.handle.net/1813/45243.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Roach, Kathryn. “Millisecond Crystallization Kinetics Of Ingao3(Zno)M .” 2016. Web. 20 May 2019.

Vancouver:

Roach K. Millisecond Crystallization Kinetics Of Ingao3(Zno)M . [Internet] [Thesis]. Cornell University; 2016. [cited 2019 May 20]. Available from: http://hdl.handle.net/1813/45243.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Roach K. Millisecond Crystallization Kinetics Of Ingao3(Zno)M . [Thesis]. Cornell University; 2016. Available from: http://hdl.handle.net/1813/45243

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. Edwards, Nicholas R. Engineering SiO2 Passivated Indium-Gallium-Zinc-Oxide TFTs for Improvement in Channel Control.

Degree: MS, Microelectronic Engineering, 2016, Rochester Institute of Technology

  The performance of Indium Gallium Zinc Oxide (IGZO) Thin-Film Transistors (TFTs) has improved significantly in recent years; however, device stability still remains a significant… (more)

Subjects/Keywords: IGZO; TFT

IGZO Interface . . . . . 3.4 IGZO Ripening . . . . . . . . . . . . . . 3.5 E-Beam Alumina… …IGZO TFTs . . 3.8 Summary of Preliminary Research . . . . Process… …5.1 Structure Definition . . . . . . . 5.2 IGZO Material Characterization 5.3 Model… …Comparison of a-Si:H and un-passivated IGZO TFT ID − VGS transfer characteristics with dimensions… …11 2.1 2.2 2.3 Linear ID -VGS measurements of Si (left) and IGZO (right… 

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APA (6th Edition):

Edwards, N. R. (2016). Engineering SiO2 Passivated Indium-Gallium-Zinc-Oxide TFTs for Improvement in Channel Control. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/9239

Chicago Manual of Style (16th Edition):

Edwards, Nicholas R. “Engineering SiO2 Passivated Indium-Gallium-Zinc-Oxide TFTs for Improvement in Channel Control.” 2016. Masters Thesis, Rochester Institute of Technology. Accessed May 20, 2019. https://scholarworks.rit.edu/theses/9239.

MLA Handbook (7th Edition):

Edwards, Nicholas R. “Engineering SiO2 Passivated Indium-Gallium-Zinc-Oxide TFTs for Improvement in Channel Control.” 2016. Web. 20 May 2019.

Vancouver:

Edwards NR. Engineering SiO2 Passivated Indium-Gallium-Zinc-Oxide TFTs for Improvement in Channel Control. [Internet] [Masters thesis]. Rochester Institute of Technology; 2016. [cited 2019 May 20]. Available from: https://scholarworks.rit.edu/theses/9239.

Council of Science Editors:

Edwards NR. Engineering SiO2 Passivated Indium-Gallium-Zinc-Oxide TFTs for Improvement in Channel Control. [Masters Thesis]. Rochester Institute of Technology; 2016. Available from: https://scholarworks.rit.edu/theses/9239


UCLA

11. Wang, Isaac Caleb. Composition Engineering for Solution-Processed Gallium-Rich Indium-Gallium-Zinc-Oxide Thin Film Transistors.

Degree: Materials Science and Engineering, 2018, UCLA

 Metal oxides have risen to prominence in recent years as a promising active layer for thin film transistors (TFTs). One of the main reasons for… (more)

Subjects/Keywords: Materials Science; Display; IGZO; Metal Oxide; Solution-Process; Thin Film Transistor

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APA (6th Edition):

Wang, I. C. (2018). Composition Engineering for Solution-Processed Gallium-Rich Indium-Gallium-Zinc-Oxide Thin Film Transistors. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/63p7w91m

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Isaac Caleb. “Composition Engineering for Solution-Processed Gallium-Rich Indium-Gallium-Zinc-Oxide Thin Film Transistors.” 2018. Thesis, UCLA. Accessed May 20, 2019. http://www.escholarship.org/uc/item/63p7w91m.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Isaac Caleb. “Composition Engineering for Solution-Processed Gallium-Rich Indium-Gallium-Zinc-Oxide Thin Film Transistors.” 2018. Web. 20 May 2019.

Vancouver:

Wang IC. Composition Engineering for Solution-Processed Gallium-Rich Indium-Gallium-Zinc-Oxide Thin Film Transistors. [Internet] [Thesis]. UCLA; 2018. [cited 2019 May 20]. Available from: http://www.escholarship.org/uc/item/63p7w91m.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang IC. Composition Engineering for Solution-Processed Gallium-Rich Indium-Gallium-Zinc-Oxide Thin Film Transistors. [Thesis]. UCLA; 2018. Available from: http://www.escholarship.org/uc/item/63p7w91m

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

12. Motley, Joshua R. Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors.

Degree: MS, Chemical Engineering, 2016, Oregon State University

 Investigations on the application of self-assembled monolayers (SAM) to indium gallium zinc oxide (IGZO) thin film transistors (TFT) for fabrication and channel modification are presented.… (more)

Subjects/Keywords: IGZO; Thin film transistors

…20 Chapter 3: Self Assembled Monolayers Applied to the Back Channel of IGZO Thin Film… …25 IGZO Structure & Electron Transport… …30 IGZO Instabilities… …47 Chapter 4: Patterning of IGZO Thin Film Transistors Using Electrohydrodynamic Ink Jet… …66 TABLE OF CONTENTS (Continued) Page HPA Patterned IGZO… 

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APA (6th Edition):

Motley, J. R. (2016). Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/59359

Chicago Manual of Style (16th Edition):

Motley, Joshua R. “Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors.” 2016. Masters Thesis, Oregon State University. Accessed May 20, 2019. http://hdl.handle.net/1957/59359.

MLA Handbook (7th Edition):

Motley, Joshua R. “Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors.” 2016. Web. 20 May 2019.

Vancouver:

Motley JR. Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors. [Internet] [Masters thesis]. Oregon State University; 2016. [cited 2019 May 20]. Available from: http://hdl.handle.net/1957/59359.

Council of Science Editors:

Motley JR. Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors. [Masters Thesis]. Oregon State University; 2016. Available from: http://hdl.handle.net/1957/59359


NSYSU

13. Lin, Li-wei. Mechanism of electrical reliability under light illumination in InGaZnO thin film transistor for the next generation display ap-plications.

Degree: Master, Physics, 2013, NSYSU

 Recently, the metal oxide semiconductor is a hot studied subject due to their ad-vanced characteristics, such as high mobility (> 10 cm2 /Vs), good uniformity,… (more)

Subjects/Keywords: UV sensor; oxygen ambient; drain bias stress; a-IGZO TFT; illumination

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APA (6th Edition):

Lin, L. (2013). Mechanism of electrical reliability under light illumination in InGaZnO thin film transistor for the next generation display ap-plications. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628113-201617

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Li-wei. “Mechanism of electrical reliability under light illumination in InGaZnO thin film transistor for the next generation display ap-plications.” 2013. Thesis, NSYSU. Accessed May 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628113-201617.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Li-wei. “Mechanism of electrical reliability under light illumination in InGaZnO thin film transistor for the next generation display ap-plications.” 2013. Web. 20 May 2019.

Vancouver:

Lin L. Mechanism of electrical reliability under light illumination in InGaZnO thin film transistor for the next generation display ap-plications. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 May 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628113-201617.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin L. Mechanism of electrical reliability under light illumination in InGaZnO thin film transistor for the next generation display ap-plications. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628113-201617

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

14. Kuo, Su-chun. Study on the Electric Characteristic Degradation Caused by Negative Bias Illumination Stress for a-InGaZnO4 Thin Film Transistors.

Degree: Master, Electrical Engineering, 2015, NSYSU

 With the evolution of modern technology, displays have been an important part in our life and thin film transistor plays a quite crucial role. Metal-oxide… (more)

Subjects/Keywords: IGZO; metal oxide semiconductor; thin film transistor; NBIS; charge trapping

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APA (6th Edition):

Kuo, S. (2015). Study on the Electric Characteristic Degradation Caused by Negative Bias Illumination Stress for a-InGaZnO4 Thin Film Transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0607115-114553

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kuo, Su-chun. “Study on the Electric Characteristic Degradation Caused by Negative Bias Illumination Stress for a-InGaZnO4 Thin Film Transistors.” 2015. Thesis, NSYSU. Accessed May 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0607115-114553.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kuo, Su-chun. “Study on the Electric Characteristic Degradation Caused by Negative Bias Illumination Stress for a-InGaZnO4 Thin Film Transistors.” 2015. Web. 20 May 2019.

Vancouver:

Kuo S. Study on the Electric Characteristic Degradation Caused by Negative Bias Illumination Stress for a-InGaZnO4 Thin Film Transistors. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 May 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0607115-114553.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kuo S. Study on the Electric Characteristic Degradation Caused by Negative Bias Illumination Stress for a-InGaZnO4 Thin Film Transistors. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0607115-114553

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

15. Wu, Chunghan. Low Temperature Preparation Of Wide Band-Gap Metal Oxide Thin Films With Novel Designed Solution Processes .

Degree: 2011, Cornell University

 Highly homogeneous crystalline TiO2 thin films were prepared by spin-coating a TiO2 nanoparticle aqueous dispersion at room temperature without further heat treatment. Using these films… (more)

Subjects/Keywords: room temperature; TiO2; hybrid devices; annealing; liquid phase deposition; igzo tft

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APA (6th Edition):

Wu, C. (2011). Low Temperature Preparation Of Wide Band-Gap Metal Oxide Thin Films With Novel Designed Solution Processes . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/33505

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Chunghan. “Low Temperature Preparation Of Wide Band-Gap Metal Oxide Thin Films With Novel Designed Solution Processes .” 2011. Thesis, Cornell University. Accessed May 20, 2019. http://hdl.handle.net/1813/33505.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Chunghan. “Low Temperature Preparation Of Wide Band-Gap Metal Oxide Thin Films With Novel Designed Solution Processes .” 2011. Web. 20 May 2019.

Vancouver:

Wu C. Low Temperature Preparation Of Wide Band-Gap Metal Oxide Thin Films With Novel Designed Solution Processes . [Internet] [Thesis]. Cornell University; 2011. [cited 2019 May 20]. Available from: http://hdl.handle.net/1813/33505.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu C. Low Temperature Preparation Of Wide Band-Gap Metal Oxide Thin Films With Novel Designed Solution Processes . [Thesis]. Cornell University; 2011. Available from: http://hdl.handle.net/1813/33505

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Southern California

16. Chen, Haitian. Nanomaterials for macroelectronics and energy storage device.

Degree: PhD, Electrical Engineering, 2014, University of Southern California

 In this dissertation, I present my development of an innovative approach to utilize the advantage of the stable semiconducting properties of two materials, carbon nanotube… (more)

Subjects/Keywords: carbon nanotube; macroelectronics; IGZO; flexible electronics; silicon nanowires

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APA (6th Edition):

Chen, H. (2014). Nanomaterials for macroelectronics and energy storage device. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/511196/rec/4314

Chicago Manual of Style (16th Edition):

Chen, Haitian. “Nanomaterials for macroelectronics and energy storage device.” 2014. Doctoral Dissertation, University of Southern California. Accessed May 20, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/511196/rec/4314.

MLA Handbook (7th Edition):

Chen, Haitian. “Nanomaterials for macroelectronics and energy storage device.” 2014. Web. 20 May 2019.

Vancouver:

Chen H. Nanomaterials for macroelectronics and energy storage device. [Internet] [Doctoral dissertation]. University of Southern California; 2014. [cited 2019 May 20]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/511196/rec/4314.

Council of Science Editors:

Chen H. Nanomaterials for macroelectronics and energy storage device. [Doctoral Dissertation]. University of Southern California; 2014. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/511196/rec/4314


University of Canterbury

17. Whiteside, Matthew David. Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide.

Degree: Electrical and Electronic Engineering, 2014, University of Canterbury

 Indium-Gallium-Zinc-Oxide (a-IGZO) is an amorphous oxide semiconductor that has been attracting increasing attention for use in flat panel display and optoelectronic applications. This is largely… (more)

Subjects/Keywords: IGZO; Indium Gallium Zinc Oxide; MESFET; AOS; Amorphous Semiconductor; Transparent Flexible Electronics

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APA (6th Edition):

Whiteside, M. D. (2014). Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide. (Thesis). University of Canterbury. Retrieved from http://hdl.handle.net/10092/9588

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Whiteside, Matthew David. “Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide.” 2014. Thesis, University of Canterbury. Accessed May 20, 2019. http://hdl.handle.net/10092/9588.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Whiteside, Matthew David. “Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide.” 2014. Web. 20 May 2019.

Vancouver:

Whiteside MD. Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide. [Internet] [Thesis]. University of Canterbury; 2014. [cited 2019 May 20]. Available from: http://hdl.handle.net/10092/9588.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Whiteside MD. Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide. [Thesis]. University of Canterbury; 2014. Available from: http://hdl.handle.net/10092/9588

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

18. Tung, Huan-Chien. The preparation and optical properties of Si-Al thin films and their applications on the passivation of thin film transistors.

Degree: PhD, Materials and Optoelectronic Science, 2014, NSYSU

 The present paper discusses the application of the silicon-aluminum and its chemical compound thin film applied on non conductive vacuum metallization (NCVM) and passivation layer… (more)

Subjects/Keywords: Si-Al target; passivation; a-IGZO TFTs; non conductive vacuum metallization; nano particle

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APA (6th Edition):

Tung, H. (2014). The preparation and optical properties of Si-Al thin films and their applications on the passivation of thin film transistors. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627114-154256

Chicago Manual of Style (16th Edition):

Tung, Huan-Chien. “The preparation and optical properties of Si-Al thin films and their applications on the passivation of thin film transistors.” 2014. Doctoral Dissertation, NSYSU. Accessed May 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627114-154256.

MLA Handbook (7th Edition):

Tung, Huan-Chien. “The preparation and optical properties of Si-Al thin films and their applications on the passivation of thin film transistors.” 2014. Web. 20 May 2019.

Vancouver:

Tung H. The preparation and optical properties of Si-Al thin films and their applications on the passivation of thin film transistors. [Internet] [Doctoral dissertation]. NSYSU; 2014. [cited 2019 May 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627114-154256.

Council of Science Editors:

Tung H. The preparation and optical properties of Si-Al thin films and their applications on the passivation of thin film transistors. [Doctoral Dissertation]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627114-154256


NSYSU

19. Chen, Yu-Chun. Physical Mechanisms and device new application of ZnO-based Thin Film Transistor.

Degree: PhD, Physics, 2013, NSYSU

 Due to the progress of digitized information, a number of studies have demonstrated the application of active-matrix flat panel display, such as ultra-large diaply (60… (more)

Subjects/Keywords: UV sensor; a-ZTO; thin film transistors; a-IGZO; negative bias illumination stress; stability

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APA (6th Edition):

Chen, Y. (2013). Physical Mechanisms and device new application of ZnO-based Thin Film Transistor. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626113-145203

Chicago Manual of Style (16th Edition):

Chen, Yu-Chun. “Physical Mechanisms and device new application of ZnO-based Thin Film Transistor.” 2013. Doctoral Dissertation, NSYSU. Accessed May 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626113-145203.

MLA Handbook (7th Edition):

Chen, Yu-Chun. “Physical Mechanisms and device new application of ZnO-based Thin Film Transistor.” 2013. Web. 20 May 2019.

Vancouver:

Chen Y. Physical Mechanisms and device new application of ZnO-based Thin Film Transistor. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2019 May 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626113-145203.

Council of Science Editors:

Chen Y. Physical Mechanisms and device new application of ZnO-based Thin Film Transistor. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626113-145203

20. 上岡, 義弘. Analysis of Electronic Structure on Amorphous Indium-Gallium-Zinc-Oxide for Flexible Printed Display : フレキシブル・プリントディスプレイにむけた非晶質酸化インジウム・ガリウム・亜鉛の電子構造解析; フレキシブル プリント ディスプレイ ニ ムケタ ヒショウシツ サンカ インジウム ガリウム アエン ノ デンシ コウゾウ カイセキ.

Degree: 博士(工学), 2014, Nara Institute of Science and Technology / 奈良先端科学技術大学院大学

Subjects/Keywords: IGZO; TFT; Flexible; Printed; Electronic structure

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APA (6th Edition):

上岡, . (2014). Analysis of Electronic Structure on Amorphous Indium-Gallium-Zinc-Oxide for Flexible Printed Display : フレキシブル・プリントディスプレイにむけた非晶質酸化インジウム・ガリウム・亜鉛の電子構造解析; フレキシブル プリント ディスプレイ ニ ムケタ ヒショウシツ サンカ インジウム ガリウム アエン ノ デンシ コウゾウ カイセキ. (Thesis). Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10061/9330

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

上岡, 義弘. “Analysis of Electronic Structure on Amorphous Indium-Gallium-Zinc-Oxide for Flexible Printed Display : フレキシブル・プリントディスプレイにむけた非晶質酸化インジウム・ガリウム・亜鉛の電子構造解析; フレキシブル プリント ディスプレイ ニ ムケタ ヒショウシツ サンカ インジウム ガリウム アエン ノ デンシ コウゾウ カイセキ.” 2014. Thesis, Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Accessed May 20, 2019. http://hdl.handle.net/10061/9330.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

上岡, 義弘. “Analysis of Electronic Structure on Amorphous Indium-Gallium-Zinc-Oxide for Flexible Printed Display : フレキシブル・プリントディスプレイにむけた非晶質酸化インジウム・ガリウム・亜鉛の電子構造解析; フレキシブル プリント ディスプレイ ニ ムケタ ヒショウシツ サンカ インジウム ガリウム アエン ノ デンシ コウゾウ カイセキ.” 2014. Web. 20 May 2019.

Vancouver:

上岡 . Analysis of Electronic Structure on Amorphous Indium-Gallium-Zinc-Oxide for Flexible Printed Display : フレキシブル・プリントディスプレイにむけた非晶質酸化インジウム・ガリウム・亜鉛の電子構造解析; フレキシブル プリント ディスプレイ ニ ムケタ ヒショウシツ サンカ インジウム ガリウム アエン ノ デンシ コウゾウ カイセキ. [Internet] [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; 2014. [cited 2019 May 20]. Available from: http://hdl.handle.net/10061/9330.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

上岡 . Analysis of Electronic Structure on Amorphous Indium-Gallium-Zinc-Oxide for Flexible Printed Display : フレキシブル・プリントディスプレイにむけた非晶質酸化インジウム・ガリウム・亜鉛の電子構造解析; フレキシブル プリント ディスプレイ ニ ムケタ ヒショウシツ サンカ インジウム ガリウム アエン ノ デンシ コウゾウ カイセキ. [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; 2014. Available from: http://hdl.handle.net/10061/9330

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Arizona State University

21. Marrs, Michael Alan. Mixed Oxide Thin Film Transistors for Flexible Displays.

Degree: MS, Chemical Engineering, 2011, Arizona State University

 A low temperature amorphous oxide thin film transistor (TFT) backplane technology for flexible organic light emitting diode (OLED) displays has been developed to create 4.1-in.… (more)

Subjects/Keywords: Chemical Engineering; Electrical Engineering; Operations Research; flexible displays; IGZO; manufacturing; OLED; oxide semiconductors; PEN

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APA (6th Edition):

Marrs, M. A. (2011). Mixed Oxide Thin Film Transistors for Flexible Displays. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/9409

Chicago Manual of Style (16th Edition):

Marrs, Michael Alan. “Mixed Oxide Thin Film Transistors for Flexible Displays.” 2011. Masters Thesis, Arizona State University. Accessed May 20, 2019. http://repository.asu.edu/items/9409.

MLA Handbook (7th Edition):

Marrs, Michael Alan. “Mixed Oxide Thin Film Transistors for Flexible Displays.” 2011. Web. 20 May 2019.

Vancouver:

Marrs MA. Mixed Oxide Thin Film Transistors for Flexible Displays. [Internet] [Masters thesis]. Arizona State University; 2011. [cited 2019 May 20]. Available from: http://repository.asu.edu/items/9409.

Council of Science Editors:

Marrs MA. Mixed Oxide Thin Film Transistors for Flexible Displays. [Masters Thesis]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/9409

22. Sjökvist, Niclas. Realizing a 32-bit Normally-Off Microprocessor With State Retention Flip Flops Using Crystalline Oxide Semiconductor Technology.

Degree: The Institute of Technology, 2013, Linköping UniversityLinköping University

  Power consumption is one of the most important design factors in modern electronic design. With a large market increase in portable battery-operated devices and… (more)

Subjects/Keywords: Normally Off; Low Power; Microprocessor; Nonvolatile; Power Gating; State Retention; Flip Flop; CAAC; IGZO

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APA (6th Edition):

Sjökvist, N. (2013). Realizing a 32-bit Normally-Off Microprocessor With State Retention Flip Flops Using Crystalline Oxide Semiconductor Technology. (Thesis). Linköping UniversityLinköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-100812

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sjökvist, Niclas. “Realizing a 32-bit Normally-Off Microprocessor With State Retention Flip Flops Using Crystalline Oxide Semiconductor Technology.” 2013. Thesis, Linköping UniversityLinköping University. Accessed May 20, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-100812.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sjökvist, Niclas. “Realizing a 32-bit Normally-Off Microprocessor With State Retention Flip Flops Using Crystalline Oxide Semiconductor Technology.” 2013. Web. 20 May 2019.

Vancouver:

Sjökvist N. Realizing a 32-bit Normally-Off Microprocessor With State Retention Flip Flops Using Crystalline Oxide Semiconductor Technology. [Internet] [Thesis]. Linköping UniversityLinköping University; 2013. [cited 2019 May 20]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-100812.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sjökvist N. Realizing a 32-bit Normally-Off Microprocessor With State Retention Flip Flops Using Crystalline Oxide Semiconductor Technology. [Thesis]. Linköping UniversityLinköping University; 2013. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-100812

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Tennessee – Knoxville

23. Bales, Aaron Hamilton. Incorporation of High-k HfO2 Thin Films in a-IGZO Thin Film Transistor Devices.

Degree: MS, Materials Science and Engineering, 2015, University of Tennessee – Knoxville

  In this study, HfO2 [hafnium oxide] thin films are investigated extensively as part of indium gallium zinc oxide (IGZO) thin film transistor (TFT) devices.… (more)

Subjects/Keywords: TFT; HfO2; dielectric; IGZO; Passivation; Nanoscience and Nanotechnology; Semiconductor and Optical Materials

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APA (6th Edition):

Bales, A. H. (2015). Incorporation of High-k HfO2 Thin Films in a-IGZO Thin Film Transistor Devices. (Thesis). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_gradthes/3558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bales, Aaron Hamilton. “Incorporation of High-k HfO2 Thin Films in a-IGZO Thin Film Transistor Devices.” 2015. Thesis, University of Tennessee – Knoxville. Accessed May 20, 2019. https://trace.tennessee.edu/utk_gradthes/3558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bales, Aaron Hamilton. “Incorporation of High-k HfO2 Thin Films in a-IGZO Thin Film Transistor Devices.” 2015. Web. 20 May 2019.

Vancouver:

Bales AH. Incorporation of High-k HfO2 Thin Films in a-IGZO Thin Film Transistor Devices. [Internet] [Thesis]. University of Tennessee – Knoxville; 2015. [cited 2019 May 20]. Available from: https://trace.tennessee.edu/utk_gradthes/3558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bales AH. Incorporation of High-k HfO2 Thin Films in a-IGZO Thin Film Transistor Devices. [Thesis]. University of Tennessee – Knoxville; 2015. Available from: https://trace.tennessee.edu/utk_gradthes/3558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Michigan

24. Fung, Tze-Ching. Amorphous In-Ga-Zn-O Thin Film Transistor for Future Optoelectronics.

Degree: PhD, Electrical Engineering, 2010, University of Michigan

 After initial report of its potential use for flexible/large area electronics, amorphous In-Ga-Zn-O (a-IGZO) is now emerging worldwide as a new semiconductor for next gen-eration… (more)

Subjects/Keywords: A-IGZO; Amorphous Oxide Semiconductor; Thin-film Transistor; TFT; Amorphous Semiconductor; Electrical Engineering; Engineering

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APA (6th Edition):

Fung, T. (2010). Amorphous In-Ga-Zn-O Thin Film Transistor for Future Optoelectronics. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/75856

Chicago Manual of Style (16th Edition):

Fung, Tze-Ching. “Amorphous In-Ga-Zn-O Thin Film Transistor for Future Optoelectronics.” 2010. Doctoral Dissertation, University of Michigan. Accessed May 20, 2019. http://hdl.handle.net/2027.42/75856.

MLA Handbook (7th Edition):

Fung, Tze-Ching. “Amorphous In-Ga-Zn-O Thin Film Transistor for Future Optoelectronics.” 2010. Web. 20 May 2019.

Vancouver:

Fung T. Amorphous In-Ga-Zn-O Thin Film Transistor for Future Optoelectronics. [Internet] [Doctoral dissertation]. University of Michigan; 2010. [cited 2019 May 20]. Available from: http://hdl.handle.net/2027.42/75856.

Council of Science Editors:

Fung T. Amorphous In-Ga-Zn-O Thin Film Transistor for Future Optoelectronics. [Doctoral Dissertation]. University of Michigan; 2010. Available from: http://hdl.handle.net/2027.42/75856


NSYSU

25. Wu, Chang-Pei. Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures.

Degree: Master, Physics, 2012, NSYSU

 The higher mobility is needed for thin film transistor (TFT) mainly used to be applied in the larger size flat-panel displays (FPDs). The amorphous metal… (more)

Subjects/Keywords: thin film transistor (TFT); positive bias stress; α-IGZO; negative bias stress with illumination; hot carrier stress effect

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wu, C. (2012). Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712112-161056

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Chang-Pei. “Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures.” 2012. Thesis, NSYSU. Accessed May 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712112-161056.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Chang-Pei. “Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures.” 2012. Web. 20 May 2019.

Vancouver:

Wu C. Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 May 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712112-161056.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu C. Electrical Analysis and Physical Mechanisms of α-InGaZnO Thin Film Transistors with different device structures. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712112-161056

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Lehigh University

26. Mahmoudabadi, Forough. Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays.

Degree: PhD, Electrical Engineering, 2017, Lehigh University

 Amorphous oxide semiconductors (AOSs) including amorphous InGaZnO (a-IGZO) areexpected to be used as the thin-film semiconducting materials for TFTs in the next-generation ultra-high definition (UHD)… (more)

Subjects/Keywords: a-IGZO; Amorphous oxide semiconductors; Flat-Panel Displays; Flexible Electronics; Thin-Film Transistors; Electrical and Computer Engineering; Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mahmoudabadi, F. (2017). Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays. (Doctoral Dissertation). Lehigh University. Retrieved from https://preserve.lehigh.edu/etd/2706

Chicago Manual of Style (16th Edition):

Mahmoudabadi, Forough. “Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays.” 2017. Doctoral Dissertation, Lehigh University. Accessed May 20, 2019. https://preserve.lehigh.edu/etd/2706.

MLA Handbook (7th Edition):

Mahmoudabadi, Forough. “Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays.” 2017. Web. 20 May 2019.

Vancouver:

Mahmoudabadi F. Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays. [Internet] [Doctoral dissertation]. Lehigh University; 2017. [cited 2019 May 20]. Available from: https://preserve.lehigh.edu/etd/2706.

Council of Science Editors:

Mahmoudabadi F. Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays. [Doctoral Dissertation]. Lehigh University; 2017. Available from: https://preserve.lehigh.edu/etd/2706


Universidade Nova

27. Bhudia, Shiv Jyotindra. Static and dynamic modelling for IGZO-TFT devices with high-k multilayer dielectric.

Degree: 2017, Universidade Nova

 Indium-Gallium-Zinc-Oxide thin-film transistors (IGZO-TFT) are a strong alternative technology for the current trend of Si based field-effect transistor (FET) for flat-panel display backplane and internet… (more)

Subjects/Keywords: IGZO; TFT; Static models; Dynamic models; Compact models; small signal; Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais

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APA (6th Edition):

Bhudia, S. J. (2017). Static and dynamic modelling for IGZO-TFT devices with high-k multilayer dielectric. (Thesis). Universidade Nova. Retrieved from https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/31864

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bhudia, Shiv Jyotindra. “Static and dynamic modelling for IGZO-TFT devices with high-k multilayer dielectric.” 2017. Thesis, Universidade Nova. Accessed May 20, 2019. https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/31864.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bhudia, Shiv Jyotindra. “Static and dynamic modelling for IGZO-TFT devices with high-k multilayer dielectric.” 2017. Web. 20 May 2019.

Vancouver:

Bhudia SJ. Static and dynamic modelling for IGZO-TFT devices with high-k multilayer dielectric. [Internet] [Thesis]. Universidade Nova; 2017. [cited 2019 May 20]. Available from: https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/31864.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bhudia SJ. Static and dynamic modelling for IGZO-TFT devices with high-k multilayer dielectric. [Thesis]. Universidade Nova; 2017. Available from: https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/31864

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade Nova

28. Rosa, José Manuel Atalaia. Solution-based IGZO nanoparticles memristor.

Degree: 2017, Universidade Nova

 This work aims to characterize Indium-Gallium-Zinc-Oxide nanoparticles (IGZOnp) as a resistive switching matrix in metal-insulator-metal (MIM) structures for memristor application. IGZOnp was produced by low… (more)

Subjects/Keywords: IGZO nanoparticles; Solution-base; Bipolar resistive switching; Valence Change Memory; Self-compliant; Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais

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APA (6th Edition):

Rosa, J. M. A. (2017). Solution-based IGZO nanoparticles memristor. (Thesis). Universidade Nova. Retrieved from http://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/21755

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rosa, José Manuel Atalaia. “Solution-based IGZO nanoparticles memristor.” 2017. Thesis, Universidade Nova. Accessed May 20, 2019. http://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/21755.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rosa, José Manuel Atalaia. “Solution-based IGZO nanoparticles memristor.” 2017. Web. 20 May 2019.

Vancouver:

Rosa JMA. Solution-based IGZO nanoparticles memristor. [Internet] [Thesis]. Universidade Nova; 2017. [cited 2019 May 20]. Available from: http://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/21755.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rosa JMA. Solution-based IGZO nanoparticles memristor. [Thesis]. Universidade Nova; 2017. Available from: http://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/21755

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade Nova

29. Magalhães, Daniela Ramalho. Influence of uniaxial bending on IGZO TFTs: A study of materials and device.

Degree: 2018, Universidade Nova

 In recent years flexible electronics have gained relevance with applications such as displays, sensors and wearables. In that regard, studying how flexible transistors behave under… (more)

Subjects/Keywords: flexible electronics; IGZO TFTs; bending; mechanical characterisation; neutral strain plane; Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Magalhães, D. R. (2018). Influence of uniaxial bending on IGZO TFTs: A study of materials and device. (Thesis). Universidade Nova. Retrieved from https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/42375

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Magalhães, Daniela Ramalho. “Influence of uniaxial bending on IGZO TFTs: A study of materials and device.” 2018. Thesis, Universidade Nova. Accessed May 20, 2019. https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/42375.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Magalhães, Daniela Ramalho. “Influence of uniaxial bending on IGZO TFTs: A study of materials and device.” 2018. Web. 20 May 2019.

Vancouver:

Magalhães DR. Influence of uniaxial bending on IGZO TFTs: A study of materials and device. [Internet] [Thesis]. Universidade Nova; 2018. [cited 2019 May 20]. Available from: https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/42375.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Magalhães DR. Influence of uniaxial bending on IGZO TFTs: A study of materials and device. [Thesis]. Universidade Nova; 2018. Available from: https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/42375

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

30. Wang, Xinzhi. Fabrication of Transparent Conductive Oxide Thin Films in the In-Ga-Zn-O and In-Sn-Zn-O Systems by Facing-Target DC-sputtering Technique : 対向ターゲット式DCスパッタリング法によるIn-Ga-Zn-OおよびIn-Sn-Zn-O系透明導電性酸化物薄膜の作製.

Degree: 博士(工学), 2017, Tokushima University / 徳島大学

Subjects/Keywords: Wide bandgap semiconductors; thin films; DC sputtering; IGZO; ITZO

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, X. (2017). Fabrication of Transparent Conductive Oxide Thin Films in the In-Ga-Zn-O and In-Sn-Zn-O Systems by Facing-Target DC-sputtering Technique : 対向ターゲット式DCスパッタリング法によるIn-Ga-Zn-OおよびIn-Sn-Zn-O系透明導電性酸化物薄膜の作製. (Thesis). Tokushima University / 徳島大学. Retrieved from http://repo.lib.tokushima-u.ac.jp/110939

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Xinzhi. “Fabrication of Transparent Conductive Oxide Thin Films in the In-Ga-Zn-O and In-Sn-Zn-O Systems by Facing-Target DC-sputtering Technique : 対向ターゲット式DCスパッタリング法によるIn-Ga-Zn-OおよびIn-Sn-Zn-O系透明導電性酸化物薄膜の作製.” 2017. Thesis, Tokushima University / 徳島大学. Accessed May 20, 2019. http://repo.lib.tokushima-u.ac.jp/110939.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Xinzhi. “Fabrication of Transparent Conductive Oxide Thin Films in the In-Ga-Zn-O and In-Sn-Zn-O Systems by Facing-Target DC-sputtering Technique : 対向ターゲット式DCスパッタリング法によるIn-Ga-Zn-OおよびIn-Sn-Zn-O系透明導電性酸化物薄膜の作製.” 2017. Web. 20 May 2019.

Vancouver:

Wang X. Fabrication of Transparent Conductive Oxide Thin Films in the In-Ga-Zn-O and In-Sn-Zn-O Systems by Facing-Target DC-sputtering Technique : 対向ターゲット式DCスパッタリング法によるIn-Ga-Zn-OおよびIn-Sn-Zn-O系透明導電性酸化物薄膜の作製. [Internet] [Thesis]. Tokushima University / 徳島大学; 2017. [cited 2019 May 20]. Available from: http://repo.lib.tokushima-u.ac.jp/110939.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang X. Fabrication of Transparent Conductive Oxide Thin Films in the In-Ga-Zn-O and In-Sn-Zn-O Systems by Facing-Target DC-sputtering Technique : 対向ターゲット式DCスパッタリング法によるIn-Ga-Zn-OおよびIn-Sn-Zn-O系透明導電性酸化物薄膜の作製. [Thesis]. Tokushima University / 徳島大学; 2017. Available from: http://repo.lib.tokushima-u.ac.jp/110939

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2]

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