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You searched for subject:(High mobility). Showing records 1 – 30 of 198 total matches.

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University of Illinois – Urbana-Champaign

1. Dorgan, Vincent E. Mobility and Saturation Velocity in Graphene on Silicon Dioxide.

Degree: MS, 1200, 2010, University of Illinois – Urbana-Champaign

 Transport properties of exfoliated graphene samples on SiO2 are examined from four-probe electrical measurements combined with electrical and thermal modeling. Data are analyzed with practical… (more)

Subjects/Keywords: graphene; mobility; high-field

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APA (6th Edition):

Dorgan, V. E. (2010). Mobility and Saturation Velocity in Graphene on Silicon Dioxide. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/16801

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dorgan, Vincent E. “Mobility and Saturation Velocity in Graphene on Silicon Dioxide.” 2010. Thesis, University of Illinois – Urbana-Champaign. Accessed December 09, 2019. http://hdl.handle.net/2142/16801.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dorgan, Vincent E. “Mobility and Saturation Velocity in Graphene on Silicon Dioxide.” 2010. Web. 09 Dec 2019.

Vancouver:

Dorgan VE. Mobility and Saturation Velocity in Graphene on Silicon Dioxide. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 Dec 09]. Available from: http://hdl.handle.net/2142/16801.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dorgan VE. Mobility and Saturation Velocity in Graphene on Silicon Dioxide. [Thesis]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/16801

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Chen, Yen-Liang. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.

Degree: PhD, Physics, 2010, NSYSU

 The quality of GaN template layer plays a very important role in high electron mobility transistors. We proposed a special method in the growth of… (more)

Subjects/Keywords: nano wire; high mobility; MBE; GaN; AlGaN

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APA (6th Edition):

Chen, Y. (2010). The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827

Chicago Manual of Style (16th Edition):

Chen, Yen-Liang. “The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.” 2010. Doctoral Dissertation, NSYSU. Accessed December 09, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827.

MLA Handbook (7th Edition):

Chen, Yen-Liang. “The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.” 2010. Web. 09 Dec 2019.

Vancouver:

Chen Y. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. [Internet] [Doctoral dissertation]. NSYSU; 2010. [cited 2019 Dec 09]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827.

Council of Science Editors:

Chen Y. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. [Doctoral Dissertation]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827


NSYSU

3. Hsu, Wen-Ti. Study of pancreatic cancer antigen detection using AlGaN/GaN high electron mobility transistor biosensor with different aluminum content.

Degree: Master, Physics, 2013, NSYSU

 Compared to classical lab instrumentation, the biosensors are being increasingly exploited as promising diagnostic devices for their advantages, such as label-free, ultrasensitive, highly selective, high(more)

Subjects/Keywords: Nitride; biosensor; high electron mobility; pancreatic cancer

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APA (6th Edition):

Hsu, W. (2013). Study of pancreatic cancer antigen detection using AlGaN/GaN high electron mobility transistor biosensor with different aluminum content. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0711113-222628

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsu, Wen-Ti. “Study of pancreatic cancer antigen detection using AlGaN/GaN high electron mobility transistor biosensor with different aluminum content.” 2013. Thesis, NSYSU. Accessed December 09, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0711113-222628.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsu, Wen-Ti. “Study of pancreatic cancer antigen detection using AlGaN/GaN high electron mobility transistor biosensor with different aluminum content.” 2013. Web. 09 Dec 2019.

Vancouver:

Hsu W. Study of pancreatic cancer antigen detection using AlGaN/GaN high electron mobility transistor biosensor with different aluminum content. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Dec 09]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0711113-222628.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsu W. Study of pancreatic cancer antigen detection using AlGaN/GaN high electron mobility transistor biosensor with different aluminum content. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0711113-222628

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Minnesota

4. Chiang, Hung-Sheng. Nonlinear transport in two-dimensional electron gas at large filling factors.

Degree: PhD, Physics, 2011, University of Minnesota

 We studied nonlinear electrical transport in high-mobility 2D electron gas (2DEG) forming in modulation-doped GaAs/AlGaAs quantum wells. Transport nonlinearities induced by a pure dc electric… (more)

Subjects/Keywords: 2DEG; High filling factor; High mobility; Nonlinear transport; Physics

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APA (6th Edition):

Chiang, H. (2011). Nonlinear transport in two-dimensional electron gas at large filling factors. (Doctoral Dissertation). University of Minnesota. Retrieved from http://purl.umn.edu/104634

Chicago Manual of Style (16th Edition):

Chiang, Hung-Sheng. “Nonlinear transport in two-dimensional electron gas at large filling factors.” 2011. Doctoral Dissertation, University of Minnesota. Accessed December 09, 2019. http://purl.umn.edu/104634.

MLA Handbook (7th Edition):

Chiang, Hung-Sheng. “Nonlinear transport in two-dimensional electron gas at large filling factors.” 2011. Web. 09 Dec 2019.

Vancouver:

Chiang H. Nonlinear transport in two-dimensional electron gas at large filling factors. [Internet] [Doctoral dissertation]. University of Minnesota; 2011. [cited 2019 Dec 09]. Available from: http://purl.umn.edu/104634.

Council of Science Editors:

Chiang H. Nonlinear transport in two-dimensional electron gas at large filling factors. [Doctoral Dissertation]. University of Minnesota; 2011. Available from: http://purl.umn.edu/104634


University of Cambridge

5. Harkin, David. Fluorescence enhancement strategies for polymer semiconductors.

Degree: PhD, 2017, University of Cambridge

 One of the major challenges in the field of organic semiconductors is to develop molecular design rules and processing routes which optimise the charge carrier… (more)

Subjects/Keywords: 621.3815; Organic Semiconductor; Fluorescence; Polymer Semiconductor; OLED; Light Emitting Diode; Charge Carrier Mobility; High Mobility

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APA (6th Edition):

Harkin, D. (2017). Fluorescence enhancement strategies for polymer semiconductors. (Doctoral Dissertation). University of Cambridge. Retrieved from https://www.repository.cam.ac.uk/handle/1810/267904 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.725582

Chicago Manual of Style (16th Edition):

Harkin, David. “Fluorescence enhancement strategies for polymer semiconductors.” 2017. Doctoral Dissertation, University of Cambridge. Accessed December 09, 2019. https://www.repository.cam.ac.uk/handle/1810/267904 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.725582.

MLA Handbook (7th Edition):

Harkin, David. “Fluorescence enhancement strategies for polymer semiconductors.” 2017. Web. 09 Dec 2019.

Vancouver:

Harkin D. Fluorescence enhancement strategies for polymer semiconductors. [Internet] [Doctoral dissertation]. University of Cambridge; 2017. [cited 2019 Dec 09]. Available from: https://www.repository.cam.ac.uk/handle/1810/267904 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.725582.

Council of Science Editors:

Harkin D. Fluorescence enhancement strategies for polymer semiconductors. [Doctoral Dissertation]. University of Cambridge; 2017. Available from: https://www.repository.cam.ac.uk/handle/1810/267904 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.725582


University of Cambridge

6. Harkin, David. Fluorescence Enhancement Strategies for Polymer Semiconductors .

Degree: 2017, University of Cambridge

 One of the major challenges in the field of organic semiconductors is to develop molecular design rules and processing routes which optimise the charge carrier… (more)

Subjects/Keywords: Organic Semiconductor; Fluorescence; Polymer Semiconductor; OLED; Light Emitting Diode; Charge Carrier Mobility; High Mobility

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Harkin, D. (2017). Fluorescence Enhancement Strategies for Polymer Semiconductors . (Thesis). University of Cambridge. Retrieved from https://www.repository.cam.ac.uk/handle/1810/267904

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Harkin, David. “Fluorescence Enhancement Strategies for Polymer Semiconductors .” 2017. Thesis, University of Cambridge. Accessed December 09, 2019. https://www.repository.cam.ac.uk/handle/1810/267904.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Harkin, David. “Fluorescence Enhancement Strategies for Polymer Semiconductors .” 2017. Web. 09 Dec 2019.

Vancouver:

Harkin D. Fluorescence Enhancement Strategies for Polymer Semiconductors . [Internet] [Thesis]. University of Cambridge; 2017. [cited 2019 Dec 09]. Available from: https://www.repository.cam.ac.uk/handle/1810/267904.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Harkin D. Fluorescence Enhancement Strategies for Polymer Semiconductors . [Thesis]. University of Cambridge; 2017. Available from: https://www.repository.cam.ac.uk/handle/1810/267904

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


The Ohio State University

7. Liu, Dongmin. Design, Fabrication and Characterization of InAlAs/InGaAs/InAsP Composite Channel HEMTs.

Degree: PhD, Electrical and Computer Engineering, 2008, The Ohio State University

  InAlAs/InGaAs high electron mobility transistors (HEMTs) are among the best-performing semiconductor devices in terms of speed, noise, and high frequency gain. However, because of… (more)

Subjects/Keywords: Electrical Engineering; InP; High electron mobility transistor; InAsP; composite channel

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APA (6th Edition):

Liu, D. (2008). Design, Fabrication and Characterization of InAlAs/InGaAs/InAsP Composite Channel HEMTs. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1213299848

Chicago Manual of Style (16th Edition):

Liu, Dongmin. “Design, Fabrication and Characterization of InAlAs/InGaAs/InAsP Composite Channel HEMTs.” 2008. Doctoral Dissertation, The Ohio State University. Accessed December 09, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1213299848.

MLA Handbook (7th Edition):

Liu, Dongmin. “Design, Fabrication and Characterization of InAlAs/InGaAs/InAsP Composite Channel HEMTs.” 2008. Web. 09 Dec 2019.

Vancouver:

Liu D. Design, Fabrication and Characterization of InAlAs/InGaAs/InAsP Composite Channel HEMTs. [Internet] [Doctoral dissertation]. The Ohio State University; 2008. [cited 2019 Dec 09]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1213299848.

Council of Science Editors:

Liu D. Design, Fabrication and Characterization of InAlAs/InGaAs/InAsP Composite Channel HEMTs. [Doctoral Dissertation]. The Ohio State University; 2008. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1213299848


NSYSU

8. Wang, Ting-ya. Suppression of High Mobility Group Box-1 (HMGB-1) by RNAi Might Alter the Inflammatory Response During Sepsis.

Degree: Master, Biological Sciences, 2008, NSYSU

High mobility group box 1 (HMGB-1) protein is a non-histone chromosomal protein. As a DNA binding protein, HMGB-1 is involved in the maintenance of nucleosome… (more)

Subjects/Keywords: RNA interference (RNAi); sepsis; cytokine; High mobility group box 1 (HMGB1)

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APA (6th Edition):

Wang, T. (2008). Suppression of High Mobility Group Box-1 (HMGB-1) by RNAi Might Alter the Inflammatory Response During Sepsis. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0904108-164845

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Ting-ya. “Suppression of High Mobility Group Box-1 (HMGB-1) by RNAi Might Alter the Inflammatory Response During Sepsis.” 2008. Thesis, NSYSU. Accessed December 09, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0904108-164845.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Ting-ya. “Suppression of High Mobility Group Box-1 (HMGB-1) by RNAi Might Alter the Inflammatory Response During Sepsis.” 2008. Web. 09 Dec 2019.

Vancouver:

Wang T. Suppression of High Mobility Group Box-1 (HMGB-1) by RNAi Might Alter the Inflammatory Response During Sepsis. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Dec 09]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0904108-164845.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang T. Suppression of High Mobility Group Box-1 (HMGB-1) by RNAi Might Alter the Inflammatory Response During Sepsis. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0904108-164845

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

9. Ha, Minh-Trang Teresa. Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors.

Degree: Materials Science and Engineering, 2016, UCLA

 AlGaN/GaN HEMTs are the most promising high power switching devices. The material properties of III-nitrides are exceptionally better than that of Si and GaAs. GaN-based… (more)

Subjects/Keywords: Materials Science; Engineering; high electron mobility transistor; passivation layer; silicon nitride

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APA (6th Edition):

Ha, M. T. (2016). Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/97m0j2k8

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ha, Minh-Trang Teresa. “Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors.” 2016. Thesis, UCLA. Accessed December 09, 2019. http://www.escholarship.org/uc/item/97m0j2k8.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ha, Minh-Trang Teresa. “Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors.” 2016. Web. 09 Dec 2019.

Vancouver:

Ha MT. Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors. [Internet] [Thesis]. UCLA; 2016. [cited 2019 Dec 09]. Available from: http://www.escholarship.org/uc/item/97m0j2k8.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ha MT. Thermal Stability of Plasma-enhanced chemical vapor deposition Silicon Nitride Passivation on AlGaN/GaN High-electron-mobility transistors. [Thesis]. UCLA; 2016. Available from: http://www.escholarship.org/uc/item/97m0j2k8

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


McMaster University

10. BHATTACHARYYA, MADHUMANTI. GRAIN GROWTH IN HIGH MANGANESE STEELS.

Degree: PhD, 2018, McMaster University

 The automotive industry, has been innovating in the field of materials development in order to meet the demand for lower emissions, improved passenger safety and… (more)

Subjects/Keywords: Grain Growth; High Manganese Steel; Annealing Twins; Mobility

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APA (6th Edition):

BHATTACHARYYA, M. (2018). GRAIN GROWTH IN HIGH MANGANESE STEELS. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/22892

Chicago Manual of Style (16th Edition):

BHATTACHARYYA, MADHUMANTI. “GRAIN GROWTH IN HIGH MANGANESE STEELS.” 2018. Doctoral Dissertation, McMaster University. Accessed December 09, 2019. http://hdl.handle.net/11375/22892.

MLA Handbook (7th Edition):

BHATTACHARYYA, MADHUMANTI. “GRAIN GROWTH IN HIGH MANGANESE STEELS.” 2018. Web. 09 Dec 2019.

Vancouver:

BHATTACHARYYA M. GRAIN GROWTH IN HIGH MANGANESE STEELS. [Internet] [Doctoral dissertation]. McMaster University; 2018. [cited 2019 Dec 09]. Available from: http://hdl.handle.net/11375/22892.

Council of Science Editors:

BHATTACHARYYA M. GRAIN GROWTH IN HIGH MANGANESE STEELS. [Doctoral Dissertation]. McMaster University; 2018. Available from: http://hdl.handle.net/11375/22892

11. Zervos, Christos. Fabrication and analysis of heterostructure field effect transistors based on AlN and InN.

Degree: 2018, University of Crete (UOC); Πανεπιστήμιο Κρήτης

 The aim of this thesis was to create new knowledge for material and device processing effects on the performance of novel III-Nitride Heterostructure Field Effect… (more)

Subjects/Keywords: Τρανζίστορ επίδρασης πεδίου υλικών III–V; High electron mobility transistor (HEMT)

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APA (6th Edition):

Zervos, C. (2018). Fabrication and analysis of heterostructure field effect transistors based on AlN and InN. (Thesis). University of Crete (UOC); Πανεπιστήμιο Κρήτης. Retrieved from http://hdl.handle.net/10442/hedi/42810

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zervos, Christos. “Fabrication and analysis of heterostructure field effect transistors based on AlN and InN.” 2018. Thesis, University of Crete (UOC); Πανεπιστήμιο Κρήτης. Accessed December 09, 2019. http://hdl.handle.net/10442/hedi/42810.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zervos, Christos. “Fabrication and analysis of heterostructure field effect transistors based on AlN and InN.” 2018. Web. 09 Dec 2019.

Vancouver:

Zervos C. Fabrication and analysis of heterostructure field effect transistors based on AlN and InN. [Internet] [Thesis]. University of Crete (UOC); Πανεπιστήμιο Κρήτης; 2018. [cited 2019 Dec 09]. Available from: http://hdl.handle.net/10442/hedi/42810.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zervos C. Fabrication and analysis of heterostructure field effect transistors based on AlN and InN. [Thesis]. University of Crete (UOC); Πανεπιστήμιο Κρήτης; 2018. Available from: http://hdl.handle.net/10442/hedi/42810

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


King Abdullah University of Science and Technology

12. Nassar, Joanna M. Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials.

Degree: 2014, King Abdullah University of Science and Technology

 For the last four decades, Si CMOS technology has been advancing with Moore’s law prediction, working itself down to the sub-20 nm regime. However, fundamental… (more)

Subjects/Keywords: Flexible; Silicon Germanium; Germanium; MOSCAPs; High Mobility; Cost-Effective

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APA (6th Edition):

Nassar, J. M. (2014). Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials. (Thesis). King Abdullah University of Science and Technology. Retrieved from http://hdl.handle.net/10754/316698

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Nassar, Joanna M. “Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials.” 2014. Thesis, King Abdullah University of Science and Technology. Accessed December 09, 2019. http://hdl.handle.net/10754/316698.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Nassar, Joanna M. “Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials.” 2014. Web. 09 Dec 2019.

Vancouver:

Nassar JM. Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials. [Internet] [Thesis]. King Abdullah University of Science and Technology; 2014. [cited 2019 Dec 09]. Available from: http://hdl.handle.net/10754/316698.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Nassar JM. Transformational Electronics: Towards Flexible Low-Cost High Mobility Channel Materials. [Thesis]. King Abdullah University of Science and Technology; 2014. Available from: http://hdl.handle.net/10754/316698

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Toronto

13. Li, Rophina Chi-Wai. Driving Techniques for GaN Power HEMTs.

Degree: 2016, University of Toronto

One of the challenges in the application of GaN power HEMTs is designing the gate driver for optimal performance of the transistors. GaN transistors can… (more)

Subjects/Keywords: Deadtime; Gallium Nitride High Electron Mobility Transistor; Gate Drive; 0544

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APA (6th Edition):

Li, R. C. (2016). Driving Techniques for GaN Power HEMTs. (Masters Thesis). University of Toronto. Retrieved from http://hdl.handle.net/1807/72747

Chicago Manual of Style (16th Edition):

Li, Rophina Chi-Wai. “Driving Techniques for GaN Power HEMTs.” 2016. Masters Thesis, University of Toronto. Accessed December 09, 2019. http://hdl.handle.net/1807/72747.

MLA Handbook (7th Edition):

Li, Rophina Chi-Wai. “Driving Techniques for GaN Power HEMTs.” 2016. Web. 09 Dec 2019.

Vancouver:

Li RC. Driving Techniques for GaN Power HEMTs. [Internet] [Masters thesis]. University of Toronto; 2016. [cited 2019 Dec 09]. Available from: http://hdl.handle.net/1807/72747.

Council of Science Editors:

Li RC. Driving Techniques for GaN Power HEMTs. [Masters Thesis]. University of Toronto; 2016. Available from: http://hdl.handle.net/1807/72747


University of Illinois – Urbana-Champaign

14. Bambery, Rohan. Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications.

Degree: MS, 1200, 2011, University of Illinois – Urbana-Champaign

 Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material… (more)

Subjects/Keywords: High Electron Mobility Transistor (HEMT); Aluminium Antimonide (AlSb); Indium Arsenide (InAs)

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APA (6th Edition):

Bambery, R. (2011). Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18297

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bambery, Rohan. “Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications.” 2011. Thesis, University of Illinois – Urbana-Champaign. Accessed December 09, 2019. http://hdl.handle.net/2142/18297.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bambery, Rohan. “Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications.” 2011. Web. 09 Dec 2019.

Vancouver:

Bambery R. Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2011. [cited 2019 Dec 09]. Available from: http://hdl.handle.net/2142/18297.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bambery R. Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications. [Thesis]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18297

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

15. Tian Fang. Carrier Transport in Graphene, Graphene Nanoribbon and GaN HEMTs</h1>.

Degree: PhD, Electrical Engineering, 2012, University of Notre Dame

  Graphene has a linear energy momentum dispersion and its Fermi velocity is vf=108 cm/s. This high carrier velocity and its perfect two-dimensional structure make… (more)

Subjects/Keywords: carrier transport; graphene; GaN; graphene nanoribbon; high electron mobility transistor

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APA (6th Edition):

Fang, T. (2012). Carrier Transport in Graphene, Graphene Nanoribbon and GaN HEMTs</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/nv935140w15

Chicago Manual of Style (16th Edition):

Fang, Tian. “Carrier Transport in Graphene, Graphene Nanoribbon and GaN HEMTs</h1>.” 2012. Doctoral Dissertation, University of Notre Dame. Accessed December 09, 2019. https://curate.nd.edu/show/nv935140w15.

MLA Handbook (7th Edition):

Fang, Tian. “Carrier Transport in Graphene, Graphene Nanoribbon and GaN HEMTs</h1>.” 2012. Web. 09 Dec 2019.

Vancouver:

Fang T. Carrier Transport in Graphene, Graphene Nanoribbon and GaN HEMTs</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2012. [cited 2019 Dec 09]. Available from: https://curate.nd.edu/show/nv935140w15.

Council of Science Editors:

Fang T. Carrier Transport in Graphene, Graphene Nanoribbon and GaN HEMTs</h1>. [Doctoral Dissertation]. University of Notre Dame; 2012. Available from: https://curate.nd.edu/show/nv935140w15

16. Nagulapally, Deepthi. Evaluation of Degradation in GaN High Electron Mobility Transistors Due to the Inverse Piezoelectric Effect.

Degree: PhD, Electrical/Computer Engineering, 2014, Old Dominion University

  It has recently been postulated that high voltage stress can result in the degradation of nanoscale structures that are made up of piezoelectric materials.… (more)

Subjects/Keywords: High voltage stress; Electron mobility transistors; Electrical and Computer Engineering

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APA (6th Edition):

Nagulapally, D. (2014). Evaluation of Degradation in GaN High Electron Mobility Transistors Due to the Inverse Piezoelectric Effect. (Doctoral Dissertation). Old Dominion University. Retrieved from 9781321316506 ; https://digitalcommons.odu.edu/ece_etds/107

Chicago Manual of Style (16th Edition):

Nagulapally, Deepthi. “Evaluation of Degradation in GaN High Electron Mobility Transistors Due to the Inverse Piezoelectric Effect.” 2014. Doctoral Dissertation, Old Dominion University. Accessed December 09, 2019. 9781321316506 ; https://digitalcommons.odu.edu/ece_etds/107.

MLA Handbook (7th Edition):

Nagulapally, Deepthi. “Evaluation of Degradation in GaN High Electron Mobility Transistors Due to the Inverse Piezoelectric Effect.” 2014. Web. 09 Dec 2019.

Vancouver:

Nagulapally D. Evaluation of Degradation in GaN High Electron Mobility Transistors Due to the Inverse Piezoelectric Effect. [Internet] [Doctoral dissertation]. Old Dominion University; 2014. [cited 2019 Dec 09]. Available from: 9781321316506 ; https://digitalcommons.odu.edu/ece_etds/107.

Council of Science Editors:

Nagulapally D. Evaluation of Degradation in GaN High Electron Mobility Transistors Due to the Inverse Piezoelectric Effect. [Doctoral Dissertation]. Old Dominion University; 2014. Available from: 9781321316506 ; https://digitalcommons.odu.edu/ece_etds/107


Loughborough University

17. Devenport, Neil A. Novel methods for the rapid and selective analysis of biological samples using hyphenated ion mobility-mass spectrometry with ambient ionization.

Degree: PhD, 2014, Loughborough University

 The increased use of mass spectrometry in the clinical setting has led to a demand for high sample throughput. Developments such as ultra high performance… (more)

Subjects/Keywords: 543; Ambient ionization; Ion mobility-mass spectrometry; Quantitative; Biofluids; High throughput

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APA (6th Edition):

Devenport, N. A. (2014). Novel methods for the rapid and selective analysis of biological samples using hyphenated ion mobility-mass spectrometry with ambient ionization. (Doctoral Dissertation). Loughborough University. Retrieved from http://hdl.handle.net/2134/14287

Chicago Manual of Style (16th Edition):

Devenport, Neil A. “Novel methods for the rapid and selective analysis of biological samples using hyphenated ion mobility-mass spectrometry with ambient ionization.” 2014. Doctoral Dissertation, Loughborough University. Accessed December 09, 2019. http://hdl.handle.net/2134/14287.

MLA Handbook (7th Edition):

Devenport, Neil A. “Novel methods for the rapid and selective analysis of biological samples using hyphenated ion mobility-mass spectrometry with ambient ionization.” 2014. Web. 09 Dec 2019.

Vancouver:

Devenport NA. Novel methods for the rapid and selective analysis of biological samples using hyphenated ion mobility-mass spectrometry with ambient ionization. [Internet] [Doctoral dissertation]. Loughborough University; 2014. [cited 2019 Dec 09]. Available from: http://hdl.handle.net/2134/14287.

Council of Science Editors:

Devenport NA. Novel methods for the rapid and selective analysis of biological samples using hyphenated ion mobility-mass spectrometry with ambient ionization. [Doctoral Dissertation]. Loughborough University; 2014. Available from: http://hdl.handle.net/2134/14287


Queen Mary, University of London

18. Norster, F. A. Investigating the roles of HMGB1 and its receptor, RAGE, in chronic lymphocytic leukaemia.

Degree: PhD, 2018, Queen Mary, University of London

High plasma levels of inflammatory mediator, high mobility group box protein 1 (HMGB1), and its main receptor, receptor for advanced glycation end products (RAGE), is… (more)

Subjects/Keywords: chronic lymphocytic leukaemia; high mobility group box protein 1; disease monitoring.

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APA (6th Edition):

Norster, F. A. (2018). Investigating the roles of HMGB1 and its receptor, RAGE, in chronic lymphocytic leukaemia. (Doctoral Dissertation). Queen Mary, University of London. Retrieved from http://qmro.qmul.ac.uk/xmlui/handle/123456789/56404 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.786339

Chicago Manual of Style (16th Edition):

Norster, F A. “Investigating the roles of HMGB1 and its receptor, RAGE, in chronic lymphocytic leukaemia.” 2018. Doctoral Dissertation, Queen Mary, University of London. Accessed December 09, 2019. http://qmro.qmul.ac.uk/xmlui/handle/123456789/56404 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.786339.

MLA Handbook (7th Edition):

Norster, F A. “Investigating the roles of HMGB1 and its receptor, RAGE, in chronic lymphocytic leukaemia.” 2018. Web. 09 Dec 2019.

Vancouver:

Norster FA. Investigating the roles of HMGB1 and its receptor, RAGE, in chronic lymphocytic leukaemia. [Internet] [Doctoral dissertation]. Queen Mary, University of London; 2018. [cited 2019 Dec 09]. Available from: http://qmro.qmul.ac.uk/xmlui/handle/123456789/56404 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.786339.

Council of Science Editors:

Norster FA. Investigating the roles of HMGB1 and its receptor, RAGE, in chronic lymphocytic leukaemia. [Doctoral Dissertation]. Queen Mary, University of London; 2018. Available from: http://qmro.qmul.ac.uk/xmlui/handle/123456789/56404 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.786339

19. Malela-Massamba, Ephrem. Développement et caractérisation de modules Technologiques sur semiconducteur GaN : application à la réalisation de cathodes froides et de transistor HEMT AlGaN/GAN : Development and characterization of technological modules based on III-V (AlGaN/GaN) semiconductor for the realisation of AlGaN/GaN HEMTs and cold Cathodes.

Degree: Docteur es, Sciences de la matière, 2016, Lyon

Les travaux présentés dans ce manuscrit sont axés sur le développement et la caractérisation de modules technologiques sur semiconducteurs à large bande interdite à base… (more)

Subjects/Keywords: Modules microélectroniques; Electroniques de puissance; Hyperfréquences; High electron mobility transistors (HEMTs); SiN-gate AlGaN/GaN HEMT; Metal-Oxide-Semiconductor High electron mobility transistors (MOS-HEMTs); Cathodes froides GaN; Diode; Microelectronics systems; Power Electronics; High frequencies; High electron mobility transistors (HEMTs); SiN-gate AlGaN/GaN HEMT; Metal-Oxide-Semiconductor High electron mobility transistors (MOS-HEMTs); GaN cold Cathodes; Diode; 621.31

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APA (6th Edition):

Malela-Massamba, E. (2016). Développement et caractérisation de modules Technologiques sur semiconducteur GaN : application à la réalisation de cathodes froides et de transistor HEMT AlGaN/GAN : Development and characterization of technological modules based on III-V (AlGaN/GaN) semiconductor for the realisation of AlGaN/GaN HEMTs and cold Cathodes. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2016LYSE1078

Chicago Manual of Style (16th Edition):

Malela-Massamba, Ephrem. “Développement et caractérisation de modules Technologiques sur semiconducteur GaN : application à la réalisation de cathodes froides et de transistor HEMT AlGaN/GAN : Development and characterization of technological modules based on III-V (AlGaN/GaN) semiconductor for the realisation of AlGaN/GaN HEMTs and cold Cathodes.” 2016. Doctoral Dissertation, Lyon. Accessed December 09, 2019. http://www.theses.fr/2016LYSE1078.

MLA Handbook (7th Edition):

Malela-Massamba, Ephrem. “Développement et caractérisation de modules Technologiques sur semiconducteur GaN : application à la réalisation de cathodes froides et de transistor HEMT AlGaN/GAN : Development and characterization of technological modules based on III-V (AlGaN/GaN) semiconductor for the realisation of AlGaN/GaN HEMTs and cold Cathodes.” 2016. Web. 09 Dec 2019.

Vancouver:

Malela-Massamba E. Développement et caractérisation de modules Technologiques sur semiconducteur GaN : application à la réalisation de cathodes froides et de transistor HEMT AlGaN/GAN : Development and characterization of technological modules based on III-V (AlGaN/GaN) semiconductor for the realisation of AlGaN/GaN HEMTs and cold Cathodes. [Internet] [Doctoral dissertation]. Lyon; 2016. [cited 2019 Dec 09]. Available from: http://www.theses.fr/2016LYSE1078.

Council of Science Editors:

Malela-Massamba E. Développement et caractérisation de modules Technologiques sur semiconducteur GaN : application à la réalisation de cathodes froides et de transistor HEMT AlGaN/GAN : Development and characterization of technological modules based on III-V (AlGaN/GaN) semiconductor for the realisation of AlGaN/GaN HEMTs and cold Cathodes. [Doctoral Dissertation]. Lyon; 2016. Available from: http://www.theses.fr/2016LYSE1078

20. Gamarra, Piero. Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs).

Degree: Docteur es, Matériaux, 2013, Université Claude Bernard – Lyon I

Cette thèse est une contribution à l'étude de composés semiconducteurs InX Al1-X N à forte teneur en Indium. Ces composés présentent des propriétés très intéressantes… (more)

Subjects/Keywords: MOVPE; High Electron Mobility Transistors; InAlN; GaN; AlGaN; Nitrures; Croissance Epitaxiale; III-N; MOVPE; High Electron Mobility Transistors; InAlN; GaN; AlGaN; Nitride Semiconductors; Epitaxy; III-N; 530.4

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APA (6th Edition):

Gamarra, P. (2013). Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs). (Doctoral Dissertation). Université Claude Bernard – Lyon I. Retrieved from http://www.theses.fr/2013LYO10009

Chicago Manual of Style (16th Edition):

Gamarra, Piero. “Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs).” 2013. Doctoral Dissertation, Université Claude Bernard – Lyon I. Accessed December 09, 2019. http://www.theses.fr/2013LYO10009.

MLA Handbook (7th Edition):

Gamarra, Piero. “Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs).” 2013. Web. 09 Dec 2019.

Vancouver:

Gamarra P. Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs). [Internet] [Doctoral dissertation]. Université Claude Bernard – Lyon I; 2013. [cited 2019 Dec 09]. Available from: http://www.theses.fr/2013LYO10009.

Council of Science Editors:

Gamarra P. Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs). [Doctoral Dissertation]. Université Claude Bernard – Lyon I; 2013. Available from: http://www.theses.fr/2013LYO10009

21. Lamiable, Olivier. Identification et caractérisation des partenaires protéiques de DSP1 chez Drosophila melanogaster : Identification and characterization of DSP1 protein partners in drosophila embryo.

Degree: Docteur es, Biologie cellulaire et moléculaire, 2010, Université d'Orléans

Chez les eucaryotes pluricellulaires, la différenciation des cellules repose en partie sur l’activation oula répression des gènes. Les profils d’expression génique mis en place vont… (more)

Subjects/Keywords: High Mobility Group; Dorsal Switch Protein 1 (DSP1); Enhancers of Trithorax and Polycomb; Complexe multiprotéique; High Mobility Group; Dorsal Switch Protein 1 (DSP1); Enhancers of Trithorax and Polycomb; Protein complex

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APA (6th Edition):

Lamiable, O. (2010). Identification et caractérisation des partenaires protéiques de DSP1 chez Drosophila melanogaster : Identification and characterization of DSP1 protein partners in drosophila embryo. (Doctoral Dissertation). Université d'Orléans. Retrieved from http://www.theses.fr/2010ORLE2005

Chicago Manual of Style (16th Edition):

Lamiable, Olivier. “Identification et caractérisation des partenaires protéiques de DSP1 chez Drosophila melanogaster : Identification and characterization of DSP1 protein partners in drosophila embryo.” 2010. Doctoral Dissertation, Université d'Orléans. Accessed December 09, 2019. http://www.theses.fr/2010ORLE2005.

MLA Handbook (7th Edition):

Lamiable, Olivier. “Identification et caractérisation des partenaires protéiques de DSP1 chez Drosophila melanogaster : Identification and characterization of DSP1 protein partners in drosophila embryo.” 2010. Web. 09 Dec 2019.

Vancouver:

Lamiable O. Identification et caractérisation des partenaires protéiques de DSP1 chez Drosophila melanogaster : Identification and characterization of DSP1 protein partners in drosophila embryo. [Internet] [Doctoral dissertation]. Université d'Orléans; 2010. [cited 2019 Dec 09]. Available from: http://www.theses.fr/2010ORLE2005.

Council of Science Editors:

Lamiable O. Identification et caractérisation des partenaires protéiques de DSP1 chez Drosophila melanogaster : Identification and characterization of DSP1 protein partners in drosophila embryo. [Doctoral Dissertation]. Université d'Orléans; 2010. Available from: http://www.theses.fr/2010ORLE2005


NSYSU

22. Wang, Sheng-Hsiang. The study of AlGaN/GaN high electron mobility transistor based biosensor for CA19-9 antigen detection.

Degree: Master, Physics, 2014, NSYSU

 AlGaN/GaN (N-HEMT) field effect transistors have high electron mobility, high sensitivity, high efficiency, high selectively and real-time detection. This kind of material for sensing of… (more)

Subjects/Keywords: field-effect transistors; two-dimensional electron gas; pancreatic cancer; biosensors; high electron mobility

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APA (6th Edition):

Wang, S. (2014). The study of AlGaN/GaN high electron mobility transistor based biosensor for CA19-9 antigen detection. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628114-164825

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Sheng-Hsiang. “The study of AlGaN/GaN high electron mobility transistor based biosensor for CA19-9 antigen detection.” 2014. Thesis, NSYSU. Accessed December 09, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628114-164825.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Sheng-Hsiang. “The study of AlGaN/GaN high electron mobility transistor based biosensor for CA19-9 antigen detection.” 2014. Web. 09 Dec 2019.

Vancouver:

Wang S. The study of AlGaN/GaN high electron mobility transistor based biosensor for CA19-9 antigen detection. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Dec 09]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628114-164825.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang S. The study of AlGaN/GaN high electron mobility transistor based biosensor for CA19-9 antigen detection. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0628114-164825

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

23. Hsu, Shi-Ya. Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen.

Degree: Master, Physics, 2012, NSYSU

 Abstract ããBiosensor chip has a lot of advantages, such as label-free, ultra-sensitive, highly selective, fast and real-time detection. Fabricating biosensor chip has great benefits for… (more)

Subjects/Keywords: silicon nanorod; biotin; field effect transistor; streptavidin; pancreatic cancer; Biosensor; high electron mobility transistor

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APA (6th Edition):

Hsu, S. (2012). Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-231225

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsu, Shi-Ya. “Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen.” 2012. Thesis, NSYSU. Accessed December 09, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-231225.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsu, Shi-Ya. “Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen.” 2012. Web. 09 Dec 2019.

Vancouver:

Hsu S. Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Dec 09]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-231225.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsu S. Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-231225

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


EPFL

24. Gonschorek, Marcus. Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics.

Degree: 2011, EPFL

 AlInN is a material which is known to be difficult to be grown among the III-nitride ternary compounds. It attracted much attention only recently and… (more)

Subjects/Keywords: wide bandgap semiconductors; gallium nitride; aluminium indium nitride; electron gas; high electron mobility transistor

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APA (6th Edition):

Gonschorek, M. (2011). Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics. (Thesis). EPFL. Retrieved from http://infoscience.epfl.ch/record/174658

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gonschorek, Marcus. “Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics.” 2011. Thesis, EPFL. Accessed December 09, 2019. http://infoscience.epfl.ch/record/174658.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gonschorek, Marcus. “Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics.” 2011. Web. 09 Dec 2019.

Vancouver:

Gonschorek M. Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics. [Internet] [Thesis]. EPFL; 2011. [cited 2019 Dec 09]. Available from: http://infoscience.epfl.ch/record/174658.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gonschorek M. Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics. [Thesis]. EPFL; 2011. Available from: http://infoscience.epfl.ch/record/174658

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Baylor University

25. [No author]. Advanced ion mobility - mass spectrometry methods for the analysis of compositionally complex mixtures.

Degree: 2016, Baylor University

 Enormous analytical challenges are involved in the analysis of compositionally complex samples such as biomass-derived products and crude oils. In this dissertation mass spectrometry (MS)-based… (more)

Subjects/Keywords: Bio-oil. Slow pyrolysis. High-resolution mass spectrometry. Ion mobility mass spectrometry. Solvent fractionation.

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APA (6th Edition):

author], [. (2016). Advanced ion mobility - mass spectrometry methods for the analysis of compositionally complex mixtures. (Thesis). Baylor University. Retrieved from http://hdl.handle.net/2104/9659

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

author], [No. “Advanced ion mobility - mass spectrometry methods for the analysis of compositionally complex mixtures. ” 2016. Thesis, Baylor University. Accessed December 09, 2019. http://hdl.handle.net/2104/9659.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

author], [No. “Advanced ion mobility - mass spectrometry methods for the analysis of compositionally complex mixtures. ” 2016. Web. 09 Dec 2019.

Vancouver:

author] [. Advanced ion mobility - mass spectrometry methods for the analysis of compositionally complex mixtures. [Internet] [Thesis]. Baylor University; 2016. [cited 2019 Dec 09]. Available from: http://hdl.handle.net/2104/9659.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

author] [. Advanced ion mobility - mass spectrometry methods for the analysis of compositionally complex mixtures. [Thesis]. Baylor University; 2016. Available from: http://hdl.handle.net/2104/9659

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

26. Bresnehan, Michael Stephen. Synthesis and Characterization of Hexagonal Boron Nitride for Integration with Graphene Electronics.

Degree: PhD, Materials Science and Engineering, 2013, Penn State University

 Hexagonal boron nitride (h-BN) has attracted increased interest as a dielectric material to graphene electronics. Traditional dielectrics, such as SiO2 or various high-k materials, can… (more)

Subjects/Keywords: Graphene; Epitaxial Graphene; Boron Nitride; h-BN; Dielectric; Field Effect Transistor; CVD; High Mobility

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bresnehan, M. S. (2013). Synthesis and Characterization of Hexagonal Boron Nitride for Integration with Graphene Electronics. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/19826

Chicago Manual of Style (16th Edition):

Bresnehan, Michael Stephen. “Synthesis and Characterization of Hexagonal Boron Nitride for Integration with Graphene Electronics.” 2013. Doctoral Dissertation, Penn State University. Accessed December 09, 2019. https://etda.libraries.psu.edu/catalog/19826.

MLA Handbook (7th Edition):

Bresnehan, Michael Stephen. “Synthesis and Characterization of Hexagonal Boron Nitride for Integration with Graphene Electronics.” 2013. Web. 09 Dec 2019.

Vancouver:

Bresnehan MS. Synthesis and Characterization of Hexagonal Boron Nitride for Integration with Graphene Electronics. [Internet] [Doctoral dissertation]. Penn State University; 2013. [cited 2019 Dec 09]. Available from: https://etda.libraries.psu.edu/catalog/19826.

Council of Science Editors:

Bresnehan MS. Synthesis and Characterization of Hexagonal Boron Nitride for Integration with Graphene Electronics. [Doctoral Dissertation]. Penn State University; 2013. Available from: https://etda.libraries.psu.edu/catalog/19826


Penn State University

27. Wang, Li. Gallium Nitride-based Electronic and Optoelectronic devices.

Degree: PhD, Engineering Science and Mechanics, 2014, Penn State University

 For the past decade, Gallium nitride (GaN) material system has earned a significant place in modern power electronic and optoelectronic devices due to its outstanding… (more)

Subjects/Keywords: gallium nitride; schottky barrier diodes; high electron mobility transistors; light emitting diodes

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, L. (2014). Gallium Nitride-based Electronic and Optoelectronic devices. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/24758

Chicago Manual of Style (16th Edition):

Wang, Li. “Gallium Nitride-based Electronic and Optoelectronic devices.” 2014. Doctoral Dissertation, Penn State University. Accessed December 09, 2019. https://etda.libraries.psu.edu/catalog/24758.

MLA Handbook (7th Edition):

Wang, Li. “Gallium Nitride-based Electronic and Optoelectronic devices.” 2014. Web. 09 Dec 2019.

Vancouver:

Wang L. Gallium Nitride-based Electronic and Optoelectronic devices. [Internet] [Doctoral dissertation]. Penn State University; 2014. [cited 2019 Dec 09]. Available from: https://etda.libraries.psu.edu/catalog/24758.

Council of Science Editors:

Wang L. Gallium Nitride-based Electronic and Optoelectronic devices. [Doctoral Dissertation]. Penn State University; 2014. Available from: https://etda.libraries.psu.edu/catalog/24758


Louisiana State University

28. Ray, Sreerupa. HMO2, a yeast HMGB protein that preferentially binds to DNA ends.

Degree: PhD, 2011, Louisiana State University

 DNA damage is a common hazard that all cells have to combat. Saccharomyces cerevisiae HMO2 is a high mobility group protein (HMGB) that is a… (more)

Subjects/Keywords: dna strand invasion; dna binding; dna repair; high mobility group (hmgb) proteins

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ray, S. (2011). HMO2, a yeast HMGB protein that preferentially binds to DNA ends. (Doctoral Dissertation). Louisiana State University. Retrieved from etd-04132011-205535 ; https://digitalcommons.lsu.edu/gradschool_dissertations/415

Chicago Manual of Style (16th Edition):

Ray, Sreerupa. “HMO2, a yeast HMGB protein that preferentially binds to DNA ends.” 2011. Doctoral Dissertation, Louisiana State University. Accessed December 09, 2019. etd-04132011-205535 ; https://digitalcommons.lsu.edu/gradschool_dissertations/415.

MLA Handbook (7th Edition):

Ray, Sreerupa. “HMO2, a yeast HMGB protein that preferentially binds to DNA ends.” 2011. Web. 09 Dec 2019.

Vancouver:

Ray S. HMO2, a yeast HMGB protein that preferentially binds to DNA ends. [Internet] [Doctoral dissertation]. Louisiana State University; 2011. [cited 2019 Dec 09]. Available from: etd-04132011-205535 ; https://digitalcommons.lsu.edu/gradschool_dissertations/415.

Council of Science Editors:

Ray S. HMO2, a yeast HMGB protein that preferentially binds to DNA ends. [Doctoral Dissertation]. Louisiana State University; 2011. Available from: etd-04132011-205535 ; https://digitalcommons.lsu.edu/gradschool_dissertations/415


University of California – Irvine

29. Panthi, Sunil. Dynamic Resource Management in Future Satellite Systems to Improve Resource Utilization.

Degree: Electrical and Computer Engineering, 2016, University of California – Irvine

 Satellite-based broadband communication has experienced increased growth in Communications on the Move (COTM) platforms such as maritime, commercial aviation, and government aviation. COTM antennas must… (more)

Subjects/Keywords: Electrical engineering; capacity; dynamic resource allocation; future satellites; high throughput satellite; mobility; satellite communication

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APA (6th Edition):

Panthi, S. (2016). Dynamic Resource Management in Future Satellite Systems to Improve Resource Utilization. (Thesis). University of California – Irvine. Retrieved from http://www.escholarship.org/uc/item/6z67x940

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Panthi, Sunil. “Dynamic Resource Management in Future Satellite Systems to Improve Resource Utilization.” 2016. Thesis, University of California – Irvine. Accessed December 09, 2019. http://www.escholarship.org/uc/item/6z67x940.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Panthi, Sunil. “Dynamic Resource Management in Future Satellite Systems to Improve Resource Utilization.” 2016. Web. 09 Dec 2019.

Vancouver:

Panthi S. Dynamic Resource Management in Future Satellite Systems to Improve Resource Utilization. [Internet] [Thesis]. University of California – Irvine; 2016. [cited 2019 Dec 09]. Available from: http://www.escholarship.org/uc/item/6z67x940.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Panthi S. Dynamic Resource Management in Future Satellite Systems to Improve Resource Utilization. [Thesis]. University of California – Irvine; 2016. Available from: http://www.escholarship.org/uc/item/6z67x940

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

30. Rosenberger, Matthew R. Probing local thermal, mechanical, and optical properties utilizing dynamic cantilever response in contact mode atomic force microscopy.

Degree: PhD, Mechanical Engineering, 2016, University of Illinois – Urbana-Champaign

 Understanding the behavior of materials and devices at the nanometer-scale is important because modern materials and devices have nanometer-scale features. Atomic force microscopy (AFM) is… (more)

Subjects/Keywords: Atomic Force Microscope (AFM); High Electron Mobility Transistors; Photothermal Induced Resonance; Contact Resonance AFM

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rosenberger, M. R. (2016). Probing local thermal, mechanical, and optical properties utilizing dynamic cantilever response in contact mode atomic force microscopy. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/95557

Chicago Manual of Style (16th Edition):

Rosenberger, Matthew R. “Probing local thermal, mechanical, and optical properties utilizing dynamic cantilever response in contact mode atomic force microscopy.” 2016. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed December 09, 2019. http://hdl.handle.net/2142/95557.

MLA Handbook (7th Edition):

Rosenberger, Matthew R. “Probing local thermal, mechanical, and optical properties utilizing dynamic cantilever response in contact mode atomic force microscopy.” 2016. Web. 09 Dec 2019.

Vancouver:

Rosenberger MR. Probing local thermal, mechanical, and optical properties utilizing dynamic cantilever response in contact mode atomic force microscopy. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2016. [cited 2019 Dec 09]. Available from: http://hdl.handle.net/2142/95557.

Council of Science Editors:

Rosenberger MR. Probing local thermal, mechanical, and optical properties utilizing dynamic cantilever response in contact mode atomic force microscopy. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/95557

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